Substrate processing apparatus for arc prevention and substrate processing method using same

Abstract

The substrate processing apparatus according to an embodiment of the present invention comprises: a support unit configured to support a substrate; a clamping ring configured to pressurize the peripheral part of the substrate; a plurality of driving units which drive up and down to adjust a pressure level applied by the clamp ring to the substrate; an arc detection unit which detects the occurrence location and intensity of an arc generated in a substrate processing process due to warpage occurring on the substrate; a warpage prediction unit which predicts a warpage occurrence location and a warpage occurrence level, on the basis of the occurrence location and intensity of the arc detected by the arc detection unit; and a control unit which controls the plurality of driving units to prevent the occurrence of the arc by adjusting the pressure level according to the warpage occurrence location and the warpage occurrence level, which are predicted by the warpage prediction unit.

Description

Substrate processing device for arc prevention and substrate processing method using the same

[0001] The present invention relates to a substrate processing device for arc prevention and a substrate processing method using the same, and more particularly, to a substrate processing device for arc prevention that detects an arc generated on a substrate and predicts a location and level of warpage generation, and a substrate processing method using the same. The present invention is derived from research conducted as part of the Small and Medium Business Technology Innovation Development of the Ministry of SMEs and Startups (Project Unique Number: 1425176307, Subproject Number: S3300781, Research Project Name: Plasma Processing Device for Fan-Out Semiconductor Packaging, Organizer: PSK Holdings Co., Ltd., Research Period: 2023.01.01 ~ 2023.12.31).

[0002] Semiconductor integrated circuits are generally very small and thin silicon chips, but they are composed of various electronic components, and go through various manufacturing processes, including photo processes, etching processes, deposition processes, reflow processes, and packaging processes, until a single semiconductor chip is produced.

[0003] As various materials are deposited on a semiconductor substrate, such as a wafer, warpage may occur in the semiconductor substrate due to factors such as different thermal expansion rates. This warpage may vary depending on the wafer material and / or thickness (e.g., silicon, glass, etc.).

[0004] If plasma treatment is performed while the wafer is in a state where bending deformation has occurred, local plasma may be generated on the lower surface of the wafer, which may cause damage to the wafer and components. To prevent this, a clamping ring called a window clamp is placed on the edge of the wafer, and a clamping load is applied to the edge of the wafer by the clamping ring, thereby preventing bending deformation of the wafer. At this time, the pressing force applied to the wafer can be controlled by providing a device that drives the clamping ring upward and downward to pressurize the edge of the wafer.

[0005] However, conventional methods of applying pressure to the wafer's periphery have the disadvantage of providing uniform pressure across the entire wafer, hindering local control of where arcs occur, and potentially damaging the wafer. Therefore, there is a pressing need for technologies that minimize wafer damage and unnecessary process interruptions.

[0006] The present invention provides a substrate processing device and a substrate processing method using the same, which prevent damage to a substrate during a substrate processing process by controlling warpage based on an arc generated on the substrate.

[0007] In addition, the present invention provides a substrate processing device and a substrate processing method using the same, which dynamically controls an arc detection target area generated on a substrate so that unnecessary process interruption does not occur, thereby providing a high efficiency substrate processing process.

[0008] In addition, the present invention provides a substrate processing device and a substrate processing method using the same, which distribute the pressure applied to the substrate so that the pressure is not directly applied, thereby reducing the risk of damage to the substrate.

[0009] Meanwhile, the technical tasks to be achieved in the present invention are not limited to the technical tasks mentioned above, and other technical tasks not mentioned can be clearly understood by a person having ordinary skill in the technical field to which the present invention belongs from the description below.

[0010] A substrate processing device according to an embodiment of the present invention includes: a support configured to support a substrate; a clamping ring configured to pressurize a peripheral portion of the substrate; a plurality of driving units that move up and down to control a pressure level provided by the clamping ring to the substrate; an arc detection unit that detects an occurrence location and an intensity of an arc generated in a substrate processing process due to warpage generated on the substrate; a warpage prediction unit that predicts a warpage occurrence location and a warpage occurrence level based on the occurrence location and intensity of the arc detected by the arc detection unit; and a control unit that controls the plurality of driving units to prevent occurrence of the arc by controlling the pressure level according to the warpage occurrence location and the warpage occurrence level predicted by the warpage prediction unit.

[0011] The above arc detection unit may further include an arc detection area setting unit configured to detect an arc occurrence in an arc detection target area during a processing process for the substrate, and configured to dynamically set the arc detection target area according to a warpage distribution of the substrate predicted according to a pressing force of the driving unit.

[0012] The above arc detection area setting unit may set the arc detection target area to be smaller than the reference area when the warpage level in the warpage distribution of the substrate predicted according to the pressing force of the driving unit is lower than the reference warpage level, and may set the arc detection target area to be larger than the reference area when the warpage level in the warpage distribution of the substrate predicted according to the pressing force of the driving unit exceeds the reference warpage level.

[0013] The above arc detection unit may be configured to detect the occurrence of parasitic plasma by analyzing light generated in a space between the peripheral portion of the substrate and the support portion by a photo sensor.

[0014] The method may further include a clamping device provided between the driving unit and the clamping ring and configured to distribute a load applied by the clamping ring to the peripheral portion of the substrate as the driving unit descends.

[0015] The above clamping ring may include a clamping ring body in the shape of a circular ring; and a plurality of connecting pieces formed by protruding from the clamping ring body and having insertion holes so that the plurality of clamping devices are each inserted.

[0016] The clamping device may include: a clamp guide coupled to the driving unit and raised and lowered by the driving unit, and having a damping groove at an upper end; a damping member coupled to the clamp guide and driven integrally, the damping member having a lower end received in the damping groove; and a damping guide having a lower end inserted into the damping groove and disposed between the clamp guide and the damping member, such that the damping member disperses the pressure applied to the clamp ring when the driving unit is driven downward.

[0017] A substrate processing method according to an embodiment of the present invention comprises: A) a step of providing a pressure to a peripheral portion of a substrate supported by a clamping member; B) a step of detecting an arc generation position and an arc intensity generated in a substrate processing process due to warpage generated on the substrate by an arc detection unit; C) a step of predicting a warpage generation position and a warpage generation level based on the arc generation position and the arc intensity detected by the arc detection unit; and D) a step of controlling a plurality of driving units to adjust a pressure level according to the warpage generation position and the warpage generation level predicted by the warpage prediction unit.

[0018] The above B) step may be a step in which B-1) an arc detection area setting unit dynamically sets an arc detection target area according to a warpage distribution of the substrate predicted by the pressing force of the driving unit; and B-2) a step in which the arc detection unit detects whether an arc has occurred and the location of the arc occurrence in the arc detection target area during a processing process for the substrate.

[0019] The above arc detection unit may be configured to detect the occurrence of parasitic plasma by analyzing light generated in a space between the peripheral portion of the substrate and the support portion by a photo sensor.

[0020] According to an embodiment of the present invention, a substrate processing device and a substrate processing method using the same can be provided to prevent damage to a substrate during a substrate processing process by controlling warpage based on an arc generated on the substrate.

[0021] In addition, according to an embodiment of the present invention, a substrate processing device and a substrate processing method using the same can be provided, which have high efficiency in a substrate processing process by dynamically controlling an arc detection target area generated on a substrate so that unnecessary process interruption does not occur.

[0022] In addition, according to an embodiment of the present invention, a substrate processing device and a substrate processing method using the same can be provided, which distribute the pressure applied to the substrate so that the pressure is not directly applied, thereby reducing the risk of damage to the substrate.

[0023] Meanwhile, the effects that can be obtained from the present invention are not limited to the effects mentioned above, and other effects that are not mentioned can be clearly understood by a person having ordinary skill in the technical field to which the present invention belongs from the description below.

[0024] FIG. 1 is a perspective view of a substrate processing device according to an embodiment of the present invention.

[0025] Figure 2 is a cross-sectional view taken along line A-A' shown in Figure 1.

[0026] Figure 3 is an enlarged view of part B shown in Figure 2.

[0027] Figure 4 is a block diagram of a substrate processing device according to an embodiment of the present invention.

[0028] Figure 5 is an exemplary diagram of a substrate processing device according to an embodiment of the present invention.

[0029] Figure 6 is a cross-sectional view of a substrate processing device according to another embodiment of the present invention.

[0030] Fig. 7 is an enlarged view showing the first embodiment of part C shown in Fig. 6.

[0031] Fig. 8 is an enlarged view showing a second embodiment of part C shown in Fig. 6.

[0032] Figure 9 is a step diagram of a substrate processing method according to an embodiment of the present invention.

[0033] Figure 10 is a step diagram of a substrate processing method according to an embodiment of the present invention.

[0034] Hereinafter, embodiments of the present invention will be described in more detail with reference to the accompanying drawings. Embodiments of the present invention can be modified in various forms, and the scope of the present invention should not be construed as being limited to the embodiments below. These embodiments are provided to more completely explain the present invention to a person having average knowledge in the art. Therefore, the shapes of elements in the drawings are exaggerated to emphasize clearer explanation. The composition of the invention to clearly solve the problem to be solved by the present invention will be described in detail with reference to the accompanying drawings based on preferred embodiments of the present invention. When assigning reference numbers to components in the drawings, the same reference numbers are assigned to the same components even if they are in different drawings, and it is noted in advance that components in other drawings may be cited when necessary when describing the drawings.

[0035] FIG. 1 is a perspective view of a substrate processing device according to an embodiment of the present invention, FIG. 2 is a cross-sectional view taken along line A-A' shown in FIG. 1, FIG. 3 is an enlarged view of part B shown in FIG. 2, and FIG. 4 is a block diagram of a substrate processing device according to an embodiment of the present invention.

[0036] Referring to FIGS. 1 to 4, a substrate processing device according to an embodiment of the present invention is a device for performing a process of processing a substrate (1).

[0037] The substrate processing device may be a device that performs, for example, a package process such as a fan-out package, a plasma process, a reflow process, an etching process, a deposition process, a photo process, or a heat treatment process. The substrate (1) processed by the substrate processing device may be provided as a semiconductor wafer, a mask, a glass substrate, or a liquid crystal display (LCD) panel, but is not limited thereto.

[0038] Although not shown, these processes can be performed in the space where the substrate is processed within the chamber, and various parts required for processing the substrate (1) can be provided inside the chamber depending on the type of substrate processing process performed in the substrate processing device.

[0039] A substrate processing device according to an embodiment of the present invention may include a support unit (1000), a clamping ring (2000), a driving unit (3000), a clamping device (4000), an arc detection area setting unit (5000), an arc detection unit (6000), a warpage prediction unit (7000), and a control unit (8000).

[0040] The support member (1000) may be configured to support the substrate. For example, the support member (110) may include a support member such as an electrostatic chuck that supports the lower surface (bottom surface) of the substrate (1), but is not limited thereto. The support member (1000) may be insulated by an insulator.

[0041] Although not shown, a plurality of lift pins may be provided on the support member (1000). As is well known, the lift pin is a device for lifting a substrate (1), and may be configured to receive a substrate (1) and a clamp ring (2000) that are brought into a chamber through an inlet / outlet by an end effector hand of a substrate transport robot for a substrate processing process, and lower them onto the support member (1000), and raise the processed substrate (1) and clamp ring (2000) from the support member and hand them over to the end effector hand.

[0042] When the substrate (1) and the clamp ring (2000) are lifted by a plurality of lift pins, the substrate (1) and the clamp ring (2000) are taken out from the chamber containing the substrate processing device by the end effector hand, and then a new substrate for subsequent processing is brought back into the chamber by the end effector hand, so that the substrate processing process is repeatedly performed.

[0043] Additionally, the support member (1000) may include a guide ring (1100). The guide ring (1100) may have a circular ring shape and provide a guide on which the substrate (1) is mounted.

[0044] The guide ring (1100) may include a guide protrusion (1110), and the guide protrusion (1110) may be formed to protrude from the upper surface of the guide ring. At this time, a plurality of guide protrusions (1110) may be provided at regular intervals (angles) along the peripheral direction of the guide ring (1100).

[0045] A substrate (1) can be mounted on the guide ring (1100). Specifically, the peripheral portion of the substrate (1) can be mounted on an area close to the inner surface of the guide ring (1100) based on the guide protrusion (1110). As a result, the substrate (1) can be stably supported.

[0046] The clamping ring (2000) can be configured to pressurize the peripheral portion of the substrate (1). Specifically, the clamping ring (2000) can prevent warping (bending deformation) from occurring in the substrate (1) during the substrate processing process by applying a load to the peripheral portion of the substrate (1).

[0047] The clamp ring (2000) may include a clamp ring body (2100) and a connecting piece (2200).

[0048] The clamping body (2100) has a circular ring shape and may include a guide groove (2110) on the lower surface. The guide groove (2110) may have a shape corresponding to the guide protrusion (1110).

[0049] By this, the clamp ring (2000) can be interlocked with the guide ring (1100) to pressurize the substrate.

[0050] The connecting piece (2200) can be formed by protruding from the clamping body (2100).

[0051] The connecting piece (2200) may be provided with an insertion hole. A plurality of connecting pieces (2200) may be provided, and a plurality of clamping devices (4000) may be configured to be inserted into each of the insertion holes. This will be described in detail later together with the clamping device (4000).

[0052] The driving unit (3000) can drive the clamping ring (2000) up and down to adjust the pressure level that the clamping ring (2000) provides to the substrate (1).

[0053] At this time, the driving unit (3000) may be configured in multiple units. The multiple driving units (3000) may be respectively connected to the multiple clamping devices (4000), thereby allowing the multiple connecting pieces (2200) to be respectively driven to move up and down.

[0054] The pressure provided to the substrate (1) by each of the plurality of connecting pieces (2200) by the driving of the driving unit (3000) may be different from each other, thereby controlling the pressure level provided to the substrate (1).

[0055] The clamping device (4000) may be installed between the driving unit (3000) and the clamping ring (2000) and configured to distribute the load applied by the clamping ring (2000) to the peripheral portion of the substrate (1) as the driving unit (3000) descends. A detailed description thereof will be provided below with reference to FIGS. 6 to 8.

[0056] The arc detection area setting unit (5000) can be configured to dynamically set the arc detection target area according to the predicted warpage distribution of the substrate according to the pressing force of the driving unit (3000).

[0057] Specifically, the arc detection area setting unit (5000) can set the arc detection target area to be smaller than the reference area when the warpage level in the warpage distribution of the substrate (1) predicted according to the pressing force of the driving unit (3000) is lower than the reference warpage level.

[0058] Conversely, if the warpage level in the predicted substrate warpage distribution according to the pressing force of the driving unit (3000) exceeds the reference warpage level, the arc detection target area can be set to be larger than the reference area.

[0059] For example, when a reference pressure level is provided to the substrate (1) through the driving unit (3000), if the warpage level of the substrate exceeds the reference warpage level and the pressure of the driving unit (3000) is greater than a preset value, the arc detection target area can be set to be larger than the reference area.

[0060] The preset value may be determined by a corresponding table or the like as the value of the pressure required to prevent bending deformation of the substrate (1) during the substrate processing process, depending on the thickness and / or material properties of the substrate (1).

[0061] The arc detection target area can be divided into a plurality of fan-shaped areas and adjusted by setting all and / or part of the areas, and can be adjusted by dividing into a circular ring having a thickness from the outer periphery of the substrate (1) toward the center of the substrate and adjusted by the size value of the thickness, but is not necessarily limited thereto, and can also be adjusted by dividing into a plurality of irregular areas on the substrate (1).

[0062] The arc detection unit (6000) can detect the location and intensity of an arc generated during the processing of the substrate (1). Here, the arc refers to a change in light intensity that occurs when abnormal plasma is generated due to warpage of the substrate (1) when power is applied to the plasma source.

[0063] If an arc is generated during the processing of the substrate (1), the substrate and internal components of the chamber may be damaged. Therefore, the arc detection unit (6000) may be configured to detect the occurrence of parasitic plasma by analyzing light generated in the space between the peripheral portion of the substrate (1) and the support portion (1000) using a photo sensor.

[0064] Specifically, the arc detection unit (6000) can be configured to detect the occurrence of an arc in an arc detection target area during a processing process for the substrate (1).

[0065] The arc detection unit (6000) can detect the occurrence of an arc based on an optical sensor. The optical sensor may include, for example, a first optical sensor that detects the location of an arc occurrence in a first direction (X-axis direction) and a second optical sensor that detects the location of an arc occurrence in a second direction (Y-axis direction) perpendicular to the first direction. The coordinates of an arc occurrence area can be determined by combining the X-axis direction arc occurrence location and the Y-axis direction arc occurrence location detected by the first optical sensor and the second optical sensor.

[0066] The arc detection target area can be dynamically set by the arc detection area setting unit (5000) according to the predicted warpage distribution of the substrate according to the pressing force of the substrate (1).

[0067] The warpage prediction unit (7000) can predict the warpage occurrence location and warpage occurrence level based on the arc occurrence location and arc intensity detected by the arc detection unit (6000).

[0068] The control unit (8000) can control a plurality of driving units (3000) to prevent the occurrence of arcs by adjusting the pressure level according to the warpage occurrence location and warpage occurrence level predicted by the warpage prediction unit (7000).

[0069] At this time, the pressure level can be determined by a corresponding table, etc. as the value of the pressure required to prevent warping of the substrate (1) in the substrate processing process according to the physical properties of the substrate.

[0070] Fig. 5 is an exemplary diagram of a substrate processing device according to an embodiment of the present invention. Fig. 5 is an exemplary diagram to help understand the operation according to an embodiment of the present invention, and is not necessarily limited thereto.

[0071] Referring to FIGS. 1 to 5 together, a substrate processing device according to an embodiment of the present invention can be divided into a first zone (R1) to a fourth zone (R4), and for example, each zone can be divided into a fan shape along an outer periphery.

[0072] Each zone may be provided with a clamping ring (2001, 2002, 2003, 2004), a driving unit (3001, 3002, 3003, 3004) and a clamping device (4001, 4002, 4003, 4004).

[0073] In the case where an arc is detected in the first zone (R1) and the third zone (R3) during the substrate processing process performed after providing a reference pressure level to the substrate through clamping (2001, 2002, 2003, 2004), the warpage prediction unit (7000) can predict the occurrence of warpage in the first zone (R1) and the third zone (R3).

[0074] At this time, if the intensity of the arc generated in the first zone (R1) is stronger than the intensity of the arc generated in the third zone (R3), the warpage prediction unit (7000) can predict the warpage generation level of a shape in which warpage is generated more strongly in the first zone (R1) than in the third zone (R3).

[0075] The control unit (8000) can control the driving unit (3000) according to the warpage occurrence location and warpage occurrence level predicted by the warpage prediction unit (7000) to adjust the pressure level provided to the substrate (1) by the clamping ring (2001, 2002, 2003, 2004).

[0076] Accordingly, the first driving unit (3001) and the third driving unit (3003) may be inserted relatively deeper than the second driving unit (3002) and the fourth driving unit (3004), but the first driving unit (3001) may be inserted relatively deeper than the third driving unit (3003).

[0077] Accordingly, the control unit (8000) can control the pressure level so that the pressure value provided to the substrate (1) by the first clamp ring (2001) is the largest, and the pressure value provided to the substrate (1) by the third clamp ring (2003) is the next largest.

[0078] The control unit (8000) can select a pressure level based on physical properties such as the thickness and material of the substrate. A table of corresponding pressure levels corresponding to the thickness and / or material of the substrate (1) can be stored in the database.

[0079] The corresponding table can be preset and stored in a database through repeated experiments to find the optimal pressure level that can prevent warpage during the substrate handling process, for example, for the thickness of the substrate and / or the material of the substrate.

[0080] Fig. 6 is a cross-sectional view of a substrate processing device according to another embodiment of the present invention, and Fig. 7 is an enlarged view showing a first embodiment (C-1) of the C portion shown in Fig. 6. Fig. 8 is an enlarged view showing a second embodiment (C-2) of the C portion shown in Fig. 6.

[0081] Referring to FIGS. 6 to 8, a substrate processing device according to another embodiment of the present invention has a different configuration of a clamping device (4000) compared to the substrate processing device according to the embodiment of the present invention illustrated in FIGS. 1 to 4, and therefore, only the different configurations will be described below, and a detailed description of overlapping drawing reference numerals for the same configuration will be omitted.

[0082] A clamping device (4000) may be provided between a driving unit (3000) and a clamping ring (2000) and configured to distribute a load applied by the clamping ring (2000) to the peripheral portion of the substrate (1) as the driving unit (3000) descends. Here, the driving unit (3000) may include a driving frame (3100) and an actuator (3200), and the actuator (3200) may allow the driving frame (3100) to be introduced and withdrawn.

[0083] The clamping device (4000) may include a clamp guide (4100), a damping member (4200), and a damping guide (4300).

[0084] The clamp guide (4100) is coupled to the driving unit (3000) and can be raised and lowered by the driving unit (3000). When the clamp guide (4100) is raised by the driving unit (3000), the lower surface of the clamp ring (2000) is supported by the clamp guide (4100) and is raised, and when the clamp guide (4100) is lowered, the clamp ring (2000) can be seated on the upper portion of the clamp guide (4100).

[0085] The clamp guide (4100) may have a damping groove (4101) formed on the upper portion. The damping groove (4101) may have an open shape on the upper surface.

[0086] The damping member (4200) is coupled with the clamp guide (4100) to operate integrally, and the lower portion can be accommodated in the damping groove (4101). The damping member (4200) can be made of an elastic material or an inelastic material. When the damping member (4200) is made of an elastic material, the load applied to the substrate (1) can be dispersed by the cushioning of the damping member (4200).

[0087] The damping member (4200) may include a damping shaft (4210) and a pressurizing body (4220). The damping shaft (4210) has a vertical length, and its lower end may be fixedly connected to a clamp guide (4100). The pressurizing body (4220) is connected to the upper end of the damping shaft (4210) and may slide along the inner surface of the damping guide (4300).

[0088] Specifically, the pressurizing body (4220) may include a step portion (4221) and a pressurizing body (4222). A detailed description thereof will be provided later together with the damping guide (4300). Accordingly, the pressurizing body (4220) directly provides a pressurizing force to the damping shaft (4210), and the pressurizing force distributed through the damping guide (4300) may be provided to the clamping ring (2000).

[0089] Additionally, the damping member (4200) may further include a spring (4230). The spring (4230) is arranged between the pressure body (4220) and the bottom surface of the damping groove (4101) to cushion the elevation of the pressure body (4220).

[0090] For example, when the damping guide (4300) applies a load to the substrate (1) by lowering the damping member (4200), the spring (4230) can be compressed to buffer the load applied to the substrate (1). The spring (4230) may be arranged to wrap around the outer circumference of the damping shaft (4210), but is not necessarily limited thereto.

[0091] The damping guide (4300) is inserted at the lower end into the damping groove (4101) and is positioned between the clamp guide (4100) and the damping member (4200), so that the pressure applied by the damping member (4200) to the clamp ring (2000) when the driving unit (3000) is driven downward can be dispersed.

[0092] For example, the damping guide (4300) may include a sliding portion (4310) and a catch portion (4320). The sliding portion (4310) may be formed to have a cylindrical shape with an open upper portion and a first inner diameter (D1). At this time, the first inner diameter (D1) may be designed to have the same value as the diameter of the damping groove (4101). Accordingly, the sliding portion (4310) may be inserted into the damping groove (4101) and may be raised and lowered together with the raising and lowering of the clamp guide (4100).

[0093] Additionally, a communication hole is formed on the lower surface of the sliding part (4310) so that a damping shaft (4210) can be inserted.

[0094] The engaging portion (4320) is formed on the upper portion of the sliding portion (4310) and is formed with a second inner diameter (D2) that is larger than the first inner diameter (D1) to form a step with the sliding portion (4310). The engaging portion (4320) can be formed to engage with the step portion (4221) of the pressurizing body (4220), thereby pressurizing the damping guide (4300) when the clamp guide (4100) fixedly coupled to the damping member (4200) descends.

[0095] In other words, when the clamp guide (4100) is lowered, the damping member (4200) is driven downward together, and the damping guide (4300) is arranged between the clamp guide (4100) and the pressurizing body (4220) so that it can be driven downward together by engaging with the step portion (4221) of the pressurizing body (4220).

[0096] At this time, the connecting piece (2200) can be placed between the clamp guide (4100) and the engaging portion (4320) of the damping guide (4300), and the damping guide (4300) can be inserted into the insertion hole provided in the connecting piece (2200). Accordingly, the load applied to the substrate (1) by the clamping ring (2000) due to the lowering of the driving unit (3000) can be distributed by the clamping device (4000).

[0097] In addition, the outer surface of the damping guide (4300) has a shape corresponding to the inner surface of the clamp guide (4100), so that when the clamp guide (4100) is lowered, the damping guide (4300) can slide down stably along the outer surface of the clamp guide (4100).

[0098] By this, a buffered pressure level can be provided compared to when the clamping ring (2000) directly presses the substrate (1), thereby reducing the possibility of damage to the substrate (1).

[0099] FIG. 9 is a step diagram of a substrate processing method according to an embodiment of the present invention, and FIG. 10 is a step diagram of a substrate processing method according to an embodiment of the present invention.

[0100] Referring to FIGS. 9 and 10 along with FIGS. 1 to 4, a substrate processing method according to an embodiment of the present invention includes a step of providing a pressure (S100), a step of detecting (S200), a step of predicting (S300), and a step of controlling (S400).

[0101] In the step of providing a pressing force (S100), the clamping ring (2000) can provide a pressing force to the peripheral part of the substrate (1) supported by the support member (1000).

[0102] In the detection step (S200), the arc detection unit (6000) can detect the location and intensity of an arc generated in the processing process of the substrate (1) due to warpage generated on the substrate (1). The arc detection unit (6000) can be configured to detect the occurrence of parasitic plasma by analyzing light generated in the space between the peripheral portion and the support portion of the substrate (1) by a photo sensor.

[0103] As another example, the detecting step (S200) may be a step of dynamically setting an arc detection target area (S210) and a step of detecting the arc detection target area (S220).

[0104] In the step (S210) of dynamically setting the arc detection target area, the arc detection target area setting unit (5000) can dynamically set the arc detection target area according to the warpage distribution of the substrate (1) predicted according to the pressing force of the driving unit (3000).

[0105] Accordingly, in the step (S220) of detecting the arc detection target area, the arc detection unit (6000) can detect whether an arc has occurred in the arc detection target area during the processing of the substrate (1) and the location where the arc has occurred.

[0106] In the prediction step (S300), the warpage prediction unit (7000) can predict the warpage occurrence location and warpage occurrence level based on the arc occurrence location and arc intensity detected by the arc detection unit (6000).

[0107] In the controlling step (S400), a plurality of driving units (3000) can be controlled to adjust the pressure level according to the warpage occurrence location and warpage occurrence level predicted by the warpage prediction unit (7000).

[0108] The detailed description above is illustrative of the present invention. Furthermore, the foregoing description illustrates preferred embodiments of the present invention, and the present invention can be used in various other combinations, modifications, and environments. In other words, changes or modifications may be made within the scope of the inventive concepts disclosed herein, the scope equivalent to the written disclosure, and / or the scope of technology or knowledge in the art. The written embodiments illustrate the best possible state for implementing the technical idea of ​​the present invention, and various modifications required for specific applications and uses of the present invention are also possible. Therefore, the detailed description of the invention above is not intended to limit the present invention to the disclosed embodiments. Furthermore, the appended claims should be construed to include other embodiments.

Claims

1. A support configured to support a substrate; A clamping ring configured to pressurize a peripheral portion of the above substrate; A plurality of driving units for lifting and lowering the clamping ring to adjust the pressure level provided to the substrate; An arc detection unit that detects the location and intensity of an arc generated during a substrate processing process due to warpage generated on the substrate; A warpage prediction unit that predicts the warpage occurrence location and warpage occurrence level based on the arc occurrence location and arc intensity detected by the above arc detection unit; and A substrate processing device, comprising a control unit that controls the plurality of driving units to prevent occurrence of the arc by adjusting the pressure level according to the warpage occurrence location and warpage occurrence level predicted by the warpage prediction unit.

2. In paragraph 1, The above arc detection unit is configured to detect the occurrence of an arc in an arc detection target area during a processing process for the substrate, A substrate processing device further comprising an arc detection area setting unit configured to dynamically set the arc detection target area according to the predicted substrate warpage distribution according to the pressing force of the driving unit.

3. In paragraph 2, The above arc detection area setting section: In the predicted warpage distribution of the substrate according to the pressing force of the driving unit, if the warpage level is lower than the reference warpage level, the arc detection target area is set to be smaller than the reference area, A substrate processing device, wherein the arc detection target area is set to be larger than the reference area when the warpage level in the warpage distribution of the substrate predicted according to the pressing force of the driving unit exceeds the reference warpage level.

4. In paragraph 3, A substrate processing device, wherein the above arc detection unit is configured to detect the occurrence of parasitic plasma by analyzing light generated in the space between the peripheral portion of the substrate and the support portion by a photo sensor.

5. In paragraph 2, A substrate processing device further comprising a clamping device provided between the driving unit and the clamping ring and configured to distribute a load applied by the clamping ring to the peripheral portion of the substrate as the driving unit is lowered.

6. In paragraph 5, The above clamping ring: A clamping body in the shape of a circular ring; and A substrate processing device comprising a plurality of connecting pieces formed by protruding from the clamping body and having insertion holes provided so that the plurality of clamping devices can be inserted, respectively.

7. In paragraph 5, The above clamping device: A clamp guide coupled to the above driving unit, raised and lowered by the driving unit, and having a damping groove at the upper end; A damping member that is integrally driven by being combined with the above clamp guide and whose lower part is received in the above damping groove; and A substrate processing device, comprising a damping guide having a lower portion inserted into the damping groove and positioned between the clamp guide and the damping member to disperse the pressure applied by the damping member to the clamp ring when the driving unit is driven downward. 8.A) A step of applying a pressure to the periphery of the substrate supported on the support by the clamping ring; B) A step in which an arc detection unit detects the location and intensity of an arc generated during a substrate processing process due to warpage generated on the substrate; C) a step of predicting the location and level of occurrence of warpage by the warpage prediction unit based on the location and intensity of the arc detected by the arc detection unit; and D) A method for processing a substrate, comprising: a step of controlling a plurality of driving units to adjust a pressure level according to a warpage occurrence location and a warpage occurrence level predicted by the warpage prediction unit.

9. In paragraph 8, Step B) above, B-1) A step for dynamically setting an arc detection target area according to the predicted substrate warpage distribution based on the pressure of the driving unit; and B-2) A substrate processing method, comprising a step of detecting whether an arc has occurred and the location of the arc occurrence in the arc detection target area during a processing process for the substrate.

10. In paragraph 9, A substrate processing method, wherein the above arc detection unit is configured to detect the occurrence of parasitic plasma by analyzing light generated in a space between the peripheral portion of the substrate and the support portion by a photo sensor.

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