Method for manufacturing light-emitting module, method for manufacturing image display device, and light-emitting module

Abstract

Provided is a method for manufacturing a light-emitting module in which dimensional accuracy of a lens or a light-shielding member for controlling light distribution of a light-emitting element is improved. A method for manufacturing a light-emitting module according to an embodiment comprises: a step for preparing a first intermediate member including a support member having a first surface and a second surface, a wiring layer provided on the first surface, a plurality of light-emitting elements electrically connected to the wiring layer on the first surface, and a photoresist member covering the light-emitting elements; and a step for lighting the plurality of light-emitting elements to expose a plurality of first portions of the photoresist member to form a second intermediate member. The photoresist member is exposed irradiation by light including the wavelength of light of the plurality of light-emitting elements.

Description

Light-emitting module manufacturing method, image display device manufacturing method, and light-emitting module

[0001] The embodiments relate to a method for manufacturing a light-emitting module, a method for manufacturing an image display device, and a light-emitting module.

[0002] Light-emitting modules, which are made up of a plurality of light-emitting elements arranged in a plane, are widely used as backlights for liquid crystal displays and various other surface light sources, and are also expected to be used in self-luminous displays.

[0003] In such a light-emitting module, by miniaturizing the light-emitting element, it is possible to make the module thinner and lighter.

[0004] On the other hand, as light-emitting elements become smaller, higher light extraction efficiency is desired, and in order to improve the light extraction efficiency, it is necessary to improve the precision of forming a light-blocking member, which is a member that controls the light distribution of the light-emitting element.As a technology related to a member that controls the light distribution of a light-emitting element, a light-emitting device having a transparent rectangular parallelepiped pillar that has the same planar shape as the light-emitting element and a lens portion that surrounds the pillar is known (Patent Document 1).

[0005] Special table 2016-525288 publication

[0006] The embodiments aim to provide a method for manufacturing a light emitting module, a method for manufacturing an image display device, and a light emitting module with improved accuracy in forming a light blocking member or a lens.

[0007] A manufacturing method for an optical emitting module according to an embodiment includes the steps of: preparing a first intermediate member including a support member having a first surface and a second surface located opposite the first surface; a wiring layer having at least a portion thereof provided on the first surface; a plurality of light emitting elements arranged on the side of the first surface, having a light extraction surface that emits light toward the first surface, and electrically connected to the wiring layer; and a first photoresist member that integrally covers the plurality of light emitting elements; and supplying current through the wiring layer to light up the plurality of light emitting elements, and forming a second intermediate member in which a plurality of first portions of the first photoresist member are exposed according to the arrangement of the plurality of light emitting elements.

[0008] A light-emitting module according to an embodiment includes a substrate including a support member having an upper surface and a wiring layer, a plurality of light-emitting elements disposed on the upper surface side, each having a light extraction surface that radiates light upward from the substrate and electrically connected to the wiring layer, and a light-shielding member containing a photosensitive agent and disposed around each of the plurality of light-emitting elements when viewed from above. The light-emitting module has recesses that open upward at positions corresponding to the plurality of light-emitting elements. The recesses include the light extraction surface as a bottom surface and the side surfaces of the light-shielding member as wall surfaces.

[0009] According to this embodiment, it is possible to provide a method for manufacturing a light emitting module and a method for manufacturing an image display device with improved accuracy in forming a light blocking member or a lens.

[0010] 10 is a schematic top view illustrating a light-emitting module according to the first embodiment. FIG. 10 is a schematic cross-sectional view taken along line IIA-IIA in FIG. 1 . FIG. 10 is a schematic cross-sectional view taken along line IIA-IIA in FIG. 1 . FIG. 10 is a schematic cross-sectional view taken along line XII-XII in FIG. 10 . FIG. 10 is a schematic cross-sectional view taken along line XII-XII in FIG. 10 . 12. A schematic enlarged view of part XIII of FIG. 12. A schematic cross-sectional view illustrating a step of a manufacturing method for a light-emitting module according to a second embodiment. A schematic cross-sectional view illustrating a step of a manufacturing method for a light-emitting module according to a second embodiment. A schematic cross-sectional view illustrating a step of a manufacturing method for a light-emitting module according to a second embodiment. A schematic cross-sectional view illustrating a step of a manufacturing method for a light-emitting module according to a second embodiment. A schematic cross-sectional view illustrating a step of a manufacturing method for a light-emitting module according to a second embodiment. A schematic cross-sectional view illustrating a step of a manufacturing method for a light-emitting module according to a second embodiment. A schematic cross-sectional view illustrating a step of a modified example of the manufacturing method for a light-emitting module according to the second embodiment. A schematic cross-sectional view illustrating a step of a modified example of the manufacturing method for a light-emitting module according to the second embodiment. A schematic top view illustrating an image display device according to a third embodiment.10. A schematic block diagram illustrating an equivalent circuit of the image display device according to the third embodiment. A schematic top view illustrating an image display device according to the fourth embodiment. A schematic block diagram illustrating an equivalent circuit of the image display device according to the fourth embodiment. A schematic cross-sectional view illustrating a light-emitting module according to the fifth embodiment. A schematic cross-sectional view illustrating a step of a method for manufacturing a light-emitting module according to the sixth embodiment. A schematic cross-sectional view illustrating a step of a method for manufacturing a light-emitting module according to the sixth embodiment. A schematic cross-sectional view illustrating a step of a method for manufacturing a light-emitting module according to the sixth embodiment. A schematic cross-sectional view illustrating a light-emitting module according to the sixth embodiment. A schematic cross-sectional view illustrating a light-emitting module according to the seventh embodiment. A schematic cross-sectional view illustrating an operation of the light-emitting module according to the seventh embodiment. A schematic cross-sectional view illustrating a light-emitting module according to the eighth embodiment. A schematic cross-sectional view illustrating a light-emitting module according to the ninth embodiment. A schematic cross-sectional view illustrating a light-emitting module according to a reference example. A schematic top view illustrating an image display device according to a tenth embodiment. 1 is an SEM photograph showing a first portion of a photoresist member produced in a test example.

[0011] Hereinafter, embodiments of the present invention will be described with reference to the drawings. The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between parts, etc., are not necessarily the same as those in reality. Furthermore, even when the same part is shown, the dimensions and ratios may be different depending on the drawing. In this specification and each drawing, elements similar to those previously described with reference to the previous drawings are designated by the same reference numerals, and detailed descriptions thereof will be omitted as appropriate.

[0012] First Embodiment FIG. 1 is a schematic top view illustrating a light-emitting module according to a first embodiment. FIG. 2A is a schematic cross-sectional view taken along line IIA-IIA in FIG. 1. As shown in FIG. 1, a light-emitting module 100 according to this embodiment includes a substrate 10, a plurality of light-emitting elements 30, a light-shielding member 50, and a wavelength conversion member 70. As shown in FIG. 2A, the substrate 10 includes a support member 12 and a wiring layer 20. The support member 12 has a first surface 12a. The wiring layer 20 is disposed on the first surface 12a. A plurality of light-emitting elements 30 are disposed on the first surface 12a.

[0013] Except for the fifth embodiment shown in FIG. 27 , three-dimensional XYZ coordinates may be used in the description of all embodiments and their modified examples. The XY plane is assumed to be a plane approximately parallel to the first surface 12 a. The X-axis direction is along the row direction of the plurality of light-emitting elements 30 arranged in a matrix. The Y-axis direction is along the column direction of the plurality of light-emitting elements 30 arranged in a matrix. The Y-axis is perpendicular to the X-axis. The Z-axis is perpendicular to the XY plane. The direction from the second surface 12 b, which is located opposite the first surface 12 a of the support member 12, toward the first surface 12 a is assumed to be the positive direction of the Z-axis.

[0014] The positive direction of the Z axis is sometimes referred to as "top", "upper part", "upper side", or "top surface", and the negative direction of the Z axis is sometimes referred to as "bottom", "lower part", "lower side", or "bottom surface". The direction along the Z axis is not necessarily the direction in which gravity acts. These are used to make the explanation easier to understand, and are not limited to the actual terms "top", "upper part", "upper", "upper surface", "lower", "lower side", "lower side", or "bottom surface". The length in the Z axis direction is sometimes referred to as "thickness".

[0015] 1, in the light-emitting module 100, the plurality of light-emitting elements 30 are arranged in a matrix of 8 rows by 8 columns on a substantially square substrate 10 in an XY plan view. The number of rows and columns in which the plurality of light-emitting elements 30 are arranged is not limited to this, and can be any number of rows and columns required depending on the application, for example. The arrangement of the plurality of light-emitting elements 30 is not limited to the matrix arrangement shown in FIG. 1, and can be any appropriate arrangement, such as a houndstooth lattice arrangement or a hexagonal lattice arrangement.

[0016] In the arrangement of the plurality of light-emitting elements 30 shown in FIG. 1 , the spacing between adjacent light-emitting elements 30 is the same for all of the light-emitting elements 30. This is not limiting, and the spacing between adjacent light-emitting elements 30 may vary depending on the position of the light-emitting elements 30 in the light-emitting module 100. For example, at the corners of the light-emitting module 100, the number of adjacent light-emitting elements is reduced, resulting in less interference between the light from the light-emitting elements, and therefore lower brightness than at the center of the light-emitting module 100. Therefore, the spacing between the light-emitting elements 30 at the corners of the light-emitting module 100 may be narrower than the spacing between the light-emitting elements 30 at the center of the light-emitting module 100 to increase brightness. The shape of the substrate 10 is not limited to a square, and may be a rectangle, any polygonal shape such as a trapezoid or a diamond, or a circle, depending on the number and arrangement of the light-emitting elements 30.

[0017] 1 and 2A, the light-shielding member 50 is disposed around each of the plurality of light-emitting elements 30 when viewed from above. The light-emitting module 100 has a plurality of recesses 55. The recesses 55 are arranged in a matrix when viewed in the XY plane. The recesses 55 are each disposed at a position where the plurality of light-emitting elements 30 are disposed, and open upward. The light-shielding member 50 penetrates from the bottom of the recesses 55 to the lower surface 50B, and the light-emitting elements 30 are disposed in the through holes.

[0018] The recess 55 is defined by an inner wall surface 50W and a light extraction surface 30S of the light-emitting element 30 as a bottom surface. The inner wall surface 50W is located between an edge portion 50E1 on the upper surface 50T side of the light-blocking member 50 and an edge portion 50E2 on the lower surface 50B side. In the XY plane view, the edge portion 50E1 is located outside the edge portion 50E2, and the area of ​​the region surrounded by the edge portion 50E1 is larger than the area of ​​the region surrounded by the edge portion 50E2. The light extraction surface 30S of the light-emitting element 30 is exposed from the light-blocking member 50 via the edge portion 50E2.

[0019] For example, in the XY plane view, the area surrounded by the edge portion 50E1 has a rectangular shape with rounded corners. The area surrounded by the edge portion 50E2 also has a rectangular shape with rounded corners. For example, the corners of the rectangular area surrounded by the edge portion 50E1 are rounder than the corners of the rectangular area surrounded by the edge portion 50E2.

[0020] In the XY plan view, the shape of the area surrounded by the edge portion 50E1 and the edge portion 50E2 is not limited to a rectangle with rounded corners. For example, the shape of the area surrounded by the edge portion 50E1 may be substantially circular or elliptical, and the shape of the area surrounded by the edge portion 50E2 may be a rectangle with rounded corners. For example, the shapes of the areas surrounded by the edge portions 50E1 and 50E2 may both be circular or elliptical. Furthermore, the shapes of the areas surrounded by the edge portions 50E1 and 50E2 may be determined by the shape of the light-emitting element 30 in the XY plan view. For example, if the shape of the light-emitting element 30 in the XY plan view is a polygon with three or more corners, the shapes of the areas surrounded by the edge portions 50E1 and 50E2 in the XY plan view may be polygons with rounded corners corresponding to the polygonal shape of the light-emitting element 30.

[0021] In the XY plane view, by disposing the edge portion 50E1 outside the edge portion 50E2, the inner wall surface 50W has the shape of a frustum side surface that spreads from the lower surface 50B side toward the upper surface 50T side of the light-shielding member 50. In a cross-sectional view, the inner wall surface 50W may spread linearly from the lower surface 50B side toward the upper surface 50T side, or may spread from the lower surface 50B side toward the upper surface 50T side while forming a concave surface when viewed from the inside of the recess 55, as in the specific example of FIG.

[0022] The light-shielding member 50 covers the wiring layer 20 on the substrate 10 and the light-emitting element 30 except for a portion of the light-extraction surface 30S of the light-emitting element 30. The light-extraction surface 30S is a surface that emits light mainly toward the first surface 12a, more specifically, in the positive direction of the Z axis. Preferably, most of the light-extraction surface 30S is exposed from the edge portion 50E2. This improves the light-extraction efficiency of the light-emitting element 30.

[0023] The light-shielding member 50 includes a material that has a light-shielding property against the light emitted from the light-emitting element 30. Preferably, the light-shielding member 50 includes a material that has a light-reflecting property. For example, the light-shielding member 50 includes a light-reflecting resin. Alternatively, the light-shielding member 50 includes a TiO ２ The light scattering particles include:

[0024] When the light-shielding member 50 has optical reflectivity, light emitted from the light-emitting element 30 is reflected by the inner wall surface 50W and emitted to the outside, thereby improving the light extraction efficiency of the light-emitting element 30. Furthermore, since the inner wall surface 50W widens from the lower surface 50B of the light-shielding member 50 toward the upper surface 50T, the light emitted from the light-extraction surface 30S is emitted while widening in accordance with the inner wall surface 50W. Therefore, the light-emitting module 100 can operate as a light source with little brightness unevenness.

[0025] The light-reflecting resin used for the light-shielding member 50 is preferably a thermosetting resin that has excellent heat resistance and light resistance. For example, silicone resin, epoxy resin, or the like can be suitably used for the light-shielding member 50.

[0026] The material contained in the light-shielding member 50 is not limited to one having light reflectivity. Depending on the application of the light-emitting module 100, the light-shielding member 50 may be a light-absorbing material. A black resin can be used as the light-absorbing material. Even a resin colored black can exhibit light-shielding performance. In the image display devices 300 and 400 according to the third and fourth embodiments described below in relation to FIGS. 23 to 26, by using a black light-shielding member 50, the light emitted from the light-emitting element 30 is less likely to become stray light, and a clear image can be displayed.

[0027] The thickness of the light-shielding member 50 from the upper surface 50T to the lower surface 50B can be, for example, about 10 μm to 450 μm. When the light-shielding member 50 is formed from a light-reflective resin, it is preferable that the thickness of the light-shielding member 50 be large from the viewpoint of light extraction efficiency.

[0028] The light emitted from the plurality of light-emitting elements 30 can be combined and emitted. The thickness and material of the light-shielding member 50 are set so that the light combined by the plurality of light-emitting elements 30 serves as a planar light source with little brightness unevenness in the light-emitting module.

[0029] The light-emitting elements 30 are arranged on the wiring layer 20. The plurality of light-emitting elements 30 are electrically connected to each other by the wiring layer 20. As shown in FIG. 2A , the wiring layer 20 includes a first wiring layer 22 and a second wiring layer 24. The first wiring layer 22 includes a plurality of wirings along the Y direction, and the second wiring layer 24 includes a plurality of wirings along the X direction. The second wiring layer 24 is arranged on the first wiring layer 22 via an insulating layer 13. The arrangement of the wirings constituting the wiring layer 20 is determined by the circuit configuration of the light-emitting module 100, and they are arranged in any direction. The first wiring layer 22 may include wirings along the X direction, and the second wiring layer 24 may include wirings along the Y direction.

[0030] By appropriately setting the wiring layer 20, it is possible to make all the light-emitting elements 30 emit light simultaneously, or to provide multiple light-emitting regions each containing multiple light-emitting elements 30, thereby switching the light emission for each light-emitting region, or controlling the brightness for each light-emitting region.

[0031] The light-emitting element 30 has a light extraction surface 30S and an electrode formation surface 30T. The electrode formation surface 30T is located on the opposite side of the light extraction surface 30S. A pair of electrodes 32a, 32b are arranged on the electrode formation surface 30T. The light-emitting element 30 has a side surface 30L. The side surface 30L is located between the light extraction surface 30S and the electrode formation surface 30T. The light extraction surface 30S is the upper surface of the light-emitting element 30, and the electrode formation surface 30T is the lower surface of the light-emitting element 30. The wiring that constitutes the wiring layer 20 is connected to the electrodes 32a, 32b of the light-emitting element 30 in a recess 12c located on the first surface 12a side of the support member 12.

[0032] For example, the electrode 32a is an anode electrode of the light-emitting element 30, and the electrode 32b is a cathode electrode. In the example of FIG. 2A , adjacent light-emitting elements 30 are connected in series by the wiring 22b of the first wiring layer 22. Of two adjacent light-emitting elements 30, the electrode 32b of the light-emitting element 30 on the positive side of the Y axis is connected to the wiring 22c, and is electrically connected, for example, to another adjacent light-emitting element. Of two adjacent light-emitting elements 30, the electrode 32a of the light-emitting element 30 on the negative side of the Y axis is connected to the wiring 22a, and is electrically connected to the other adjacent light-emitting element.

[0033] The shape of the light-emitting element 30 in the XY plane view is, for example, rectangular. The shape of the light-emitting element 30 in the XY plane view is not limited to a rectangle, and may be a polygon with three or more corners, a circle, or an ellipse. In the case of a polygon, the corners may be chamfered or rounded. In this example, the three-dimensional shape of the light-emitting element 30 is a truncated pyramid whose diameter increases from the electrode formation surface 30T toward the light extraction surface 30S. However, the three-dimensional shape of the light-emitting element 30 is not limited to this, and may be a truncated pyramid, a truncated cone, an elliptical cone, or the like whose diameter decreases from the electrode formation surface 30T toward the light extraction surface 30S. The three-dimensional shape of the light-emitting element 30 may be a columnar body having the same diameter from the electrode formation surface 30T to the light extraction surface 30S.

[0034] A light-reflecting film 34 is preferably disposed on the side surface 30L of the light-emitting element 30. The light-reflecting film 34 is, for example, a DBR (Distributed Bragg Reflector) film. By providing the light-reflecting film 34 on the side surface 30L, it is possible to suppress light radiation from the side surface 30L and improve the light extraction efficiency of the light-emitting element 30.

[0035] The light-emitting element 30 mainly emits light from the light-extraction surface 30S. In this example, the light-extraction surface 30S is roughened, and the light emitted from the light-extraction surface 30S is diffused over a wider range. The light-extraction surface 30S does not need to be roughened, and may be a substantially flat surface. Some light may also be emitted from the side surface 30L and the electrode-forming surface 30T.

[0036] The light-emitting element 30 includes a semiconductor structure 31. The electrodes 32a and 32b are connected to the p-type semiconductor layer and the n-type semiconductor layer, respectively, that constitute the semiconductor structure 31. In the semiconductor structure 31, for example, a p-type semiconductor layer, a light-emitting layer, and an n-type semiconductor layer are stacked to realize a light-emitting diode structure.

[0037] The light-emitting layer may be a structure having a single active layer, such as a double heterostructure or a single quantum well structure (SQW), or a structure having a group of active layers, such as a multiple quantum well structure (MQW). The light-emitting layer can emit visible light or ultraviolet light. For example, visible light can include light ranging from at least blue to red. The semiconductor structure 31 including such a light-emitting layer may be, for example, In ｘ Al ｙ Ga １－ｘ－ｙ N (0≦x, 0≦y, x+y≦1).

[0038] The light-emitting element 30 may include two or more light-emitting layers in the semiconductor structure 31. For example, the semiconductor structure 31 may include two or more light-emitting layers between an n-type semiconductor layer and a p-type semiconductor layer, or may include two or more repeated structures in which an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer are sequentially stacked. The two or more light-emitting layers may include, for example, light-emitting layers emitting different light colors, or light-emitting layers emitting the same light color. The same light emission color may be within a range that can be considered the same emission color in use, and may include, for example, a variation of several nanometers in the dominant wavelength of each emission color. The combination of emission colors can be appropriately selected. For example, when two light-emitting layers are included, combinations include blue light and blue light, green light and green light, red light and red light, ultraviolet light and ultraviolet light, blue light and green light, blue light and red light, or green light and red light.

[0039] The light-transmitting member 60 is disposed on the upper surface 50T of the light-shielding member 50. The light-transmitting member 60 is disposed on the inner wall surface 50W. The light-transmitting member 60 is disposed on the light-emitting element 30. The light-transmitting member 60 on the light-emitting element 30 covers the light extraction surface 30S exposed from the light-shielding member 50 via the edge portion 50E2. The light-transmitting member 60 is provided to provide a substantially flat surface when the wavelength conversion member 70 is disposed on the light-transmitting member 60. Note that the wavelength conversion member 70 may be disposed directly on the light-shielding member 50 without the light-transmitting member 60 therebetween. In this case, for example, the recess 55 becomes a space filled with air or the like.

[0040] The wavelength conversion member 70 is disposed on the light-transmitting member 60. The wavelength conversion member 70 includes a light-transmitting base material 72 and a wavelength conversion material 74. The wavelength conversion material 74 converts the light emitted by the light-emitting element 30 into light of a different wavelength. Examples of the wavelength conversion material include a quantum dot material and a phosphor material.

[0041] The wavelength conversion member 70 can contain one type or multiple different types of wavelength conversion materials. When multiple wavelength conversion materials are contained, the wavelength conversion member 70 can contain, for example, a β-sialon phosphor that emits green light and a fluoride-based phosphor such as a KSF-based phosphor that emits red light. By using a wavelength conversion member 70 containing multiple wavelength conversion materials, the color reproduction range of the light emitting module 100 can be expanded.

[0042] A known phosphor can be used as the wavelength conversion material 74. The phosphor can be an yttrium aluminum garnet phosphor (for example, Y ３ (Al, Ga) ５ O １２ :Ce), lutetium aluminum garnet phosphors (e.g., Lu ３ (Al, Ga) ５ O １２ :Ce), terbium aluminum garnet phosphors (for example, Tb ３ (Al, Ga) ５ O １２ :Ce), CCA-based phosphors (e.g., Ca １０ (P.O. ４ ) ６ C ｌ２ :Eu), SAE-based phosphors (for example, Sr ４ Al １４ O ２５ :Eu), chlorosilicate phosphors (e.g., Ca ８ MgSi ４ O １６ C ｌ２ :Eu), oxynitride phosphors, nitride phosphors, fluoride phosphors, phosphors having a perovskite structure (for example, CsPb(F,Cl,Br,I) ３ ), or quantum dot phosphors (e.g., CdSe, InP, AgInS２ or AgInSe ２ A typical example of an oxynitride-based phosphor is a β-sialon-based phosphor (for example, (Si, Al) ３ (O, N) ４ :Eu) and α-sialon-based phosphors (for example, Ca(Si,Al) １２ (O, N) １６ A typical example of a nitride-based phosphor is an SLA-based phosphor (for example, SrLiAl ３ N ４ :Eu), CASN-based phosphors (e.g., CaAlSiN ３ :Eu) and SCASN-based phosphors (e.g., (Sr,Ca)AlSiN ３ A typical example of a fluoride-based phosphor is a KSF-based phosphor (for example, K ２ SiF ６ :Mn), KSAF-based phosphors (for example, K ２ Si ０．９９ Al ０．０１ F ５．９９ :Mn) and MGF-based phosphors (for example, 3.5MgO.0.5MgF ２ GeO ２ :Mn), etc.

[0043] The substrate 72 of the wavelength conversion member 70 is, for example, a sheet-shaped resin member. The resin material for the substrate 72 can be, for example, epoxy resin, silicone resin, or a mixture of these. Alternatively, the substrate 72 can be made of a light-transmitting material such as glass. From the viewpoints of light resistance and ease of molding, it is advantageous to select silicone resin as the substrate 72. A phosphor sheet can be used as the wavelength conversion member 70 in which the wavelength conversion material 74 is dispersed in the resin substrate 72 as described above.

[0044] The support member 12 is preferably made of a light-reflective resin. The light-reflective resin is, for example, a thermosetting resin that has excellent heat resistance and light resistance. For example, silicone resin, epoxy resin, or the like can be suitably used as the light-reflective resin. For example, a light-reflective filler can be mixed into the silicone resin to make it a member having light reflectivity. The light-reflective filler can be, for example, TiO ２ The thickness of the support member 12 can be set to, for example, about 15 μm to 300 μm.

[0045] The substrate 10 may include a reinforcing substrate 14. The reinforcing substrate 14 is disposed on the second surface 12b of the support member 12, opposite the first surface 12a. The reinforcing substrate 14 is used to reinforce the mechanical strength of the support member 12. To achieve a thin light-emitting module 100, the support member 12 is formed to be sufficiently thin. If the support member 12 is thin, it may be prone to warping and wrinkling. In such cases, it may be difficult to maintain the dimensional accuracy of the light-emitting module 100. By disposing the reinforcing substrate 14, it is possible to suppress warping and wrinkling of the support member 12 and reinforce the mechanical strength of the support member 12. The reinforcing substrate 14 may be, for example, a substrate using polyimide-impregnated glass cloth. The thickness of the reinforcing substrate 14 may be, for example, approximately 25 μm to 200 μm.

[0046] 2A, multiple buffer members are disposed below the reinforcing substrate 14. The buffer members include an adhesive layer 16, a planarizing layer 17, an adhesive layer 18, and a buffer layer 19, which are disposed in this order from the positive to the negative direction of the Z axis. The buffer members are provided to mitigate thermal stress and mechanical stress applied to the light-emitting module 100 during the manufacturing process, etc. These buffer members may be removed after use in the manufacturing process.

[0047] 2B is a schematic cross-sectional view taken along an arrow, illustrating a light-emitting module according to a modified example of the first embodiment. As shown in FIG. 2B, in the light-emitting module 100a, the configuration of the light-emitting element 30a is different from the configuration of the light-emitting element 30 shown in FIG. 2A. In the light-emitting module 100a, the configuration of the light-shielding member 50a is different from the configuration of the light-shielding member 50 shown in FIG. 2A. In other respects, the configuration of the light-emitting module 100a is the same as the configuration of the light-emitting module 100 shown in FIG. 2A, and the same components are denoted by the same reference numerals, and detailed description thereof will be omitted as appropriate.

[0048] In the light emitting module 100a according to this modification, the light emitting element 30a does not have a light reflecting film on the side surface 30L, so that the light emitting element 30a can emit light from the side surface 30L.

[0049] The light blocking member 50a includes a plurality of recesses 55a. The arrangement of the plurality of recesses 55a in the XY plane is the same as that of the light emitting module 100 shown in Fig. 2A, and detailed description thereof will be omitted.

[0050] The recess 55a is defined by an inner wall surface 50aW, a side surface 30L of the light emitting element 30a, and a light extraction surface 30S as a bottom surface.

[0051] The inner wall surface 50aW is located between an edge 50aE1 on the upper surface 50aT side of the light-blocking member 50a and an edge 50aE2 on the lower surface 50B side. The inner wall surface 50aW intersects with the side surface 30L of the light-emitting element 30a at the edge 50aE2. That is, in the recess 55a, the light extraction surface 30S serving as the bottom surface is positioned at a position protruding in the positive direction of the Z axis within the recess 55a.

[0052] In the XY plane view, the edge portion 50aE1 is disposed outside the edge portion 50aE2 and the edge portion 30E of the light extraction surface 30S. The area of ​​the region surrounded by the edge portion 50aE1 is larger than the area of ​​the region surrounded by the edge portion 50aE2 and the area of ​​the light extraction surface 30S.

[0053] At least a portion of the light emitted from the side surface 30L of the light-emitting element 30a is directed toward the inner wall surface 50aW. If the light-blocking member 50a has light reflectivity, the light emitted from the side surface 30L of the light-emitting element 30a and directed toward the inner wall surface 50aW is reflected by the inner wall surface 50aW and at least a portion of the light is directed upward. The light reflected by the inner wall surface 50aW and directed upward is combined with the light emitted from the light extraction surface 30S, thereby further improving the light extraction efficiency of the light-emitting element 30a.

[0054] (Method of manufacturing light emitting module 100) Figures 3 to 5, 7A, 7B, and 8 are schematic cross-sectional views illustrating a step of a method of manufacturing the light emitting module according to the first embodiment. Figure 6 is a schematic perspective view illustrating a step of a method of manufacturing the light emitting module according to the first embodiment. Figures 3 to 5, 7A, 7B, and 8 are schematic cross-sectional views of a portion corresponding to the cross section taken along line IIA-IIA in Figure 1.

[0055] 3, an intermediate member (first intermediate member) 1100 is prepared. The intermediate member 1100 includes a substrate 10, a plurality of light-emitting elements 30, and a photoresist member 1110. The substrate 10 includes a wiring layer 20, a support member 12, and a reinforcing substrate 14.

[0056] As described with reference to FIGS. 1 and 2A , the wiring layer 20 is disposed on the first surface 12a of the support member 12, and the reinforcing substrate 14 is disposed on the second surface 12b of the support member. The plurality of light-emitting elements 30 are disposed on the first surface 12a of the support member 12 with their light extraction surfaces 30S facing the positive direction of the Z axis and are electrically connected to the wiring layer 20. A photoresist member 1110 is disposed on the support member 12 and the plurality of light-emitting elements 30, integrally covering the first surface 12a of the support member 12, the wiring layer 20, and the plurality of light-emitting elements 30. In the intermediate member 1100, the substrate 10 is disposed on a support substrate 1101 via a buffer member consisting of an adhesion layer 16, a planarization layer 17, an adhesive layer 18, and a buffer layer 19. The support substrate 1101 is provided to protect the intermediate member when it is moved between processes and during processes.

[0057] The photoresist member 1110 is a negative photoresist. In the negative photoresist member 1110, portions irradiated with light of a predetermined wavelength exhibit reduced solubility in a developer. In this embodiment, the wavelength of light to which the photoresist member 1110 is sensitive includes the wavelength of light emitted by the light-emitting element 30. When the light-emitting element 30 emits ultraviolet light, a photoresist member 1110 sensitive to ultraviolet light can be used. A photoresist member sensitive to ultraviolet light is preferable because it allows for the formation of fine shapes. Furthermore, when the light-emitting element 30 emits blue light, a photoresist member 1110 sensitive to blue light can be used. In this way, the photoresist member 1110 can be made of an appropriate material that is sensitive to the wavelength of the light emitted by the light-emitting element 30.

[0058] As shown in Fig. 4, current is supplied to the light-emitting elements 30 via the first wiring layer 22 to cause them to emit light. As in the example of Fig. 4, depending on the configuration of the wiring layer 20 including the first wiring layer 22, multiple light-emitting elements 30 may be made to emit light simultaneously, or multiple light-emitting elements 30 may be divided into regions and made to emit light sequentially. In the specific example of Fig. 4, two light-emitting elements 30 are connected in series. An external power supply circuit is connected to the two light-emitting elements 30 via wires 22a and 22c of the first wiring layer 22, and current is supplied to them. This causes the two light-emitting elements 30 to emit light simultaneously.

[0059] Light L from the light-emitting element 30 is emitted according to the light distribution characteristics of the light-emitting element 30. The length of the arrow representing light L indicates the level of brightness, with the longer the arrow, the higher the brightness. For example, if the light-emitting element 30 has a Lambertian light distribution characteristic, as shown in FIG. 4 , the brightness is highest directly above the light-extraction surface 30S along the optical axis perpendicular to the light-extraction surface 30S, and the brightness decreases as the angle from the optical axis increases. The exposure amount of the photoresist member 1110 is expressed as the product of the brightness of the irradiated light and the irradiation time. Therefore, the exposure amount of the photoresist member 1110 is high directly above the light-extraction surface 30S along the optical axis, and decreases as the angle from the optical axis increases.

[0060] After the exposure process of the photoresist member 1110, the unexposed portion of the first intermediate member 1100 is removed to form a second intermediate member 1100a, as shown in FIG. 5 . In the second intermediate member 1100a, a predetermined amount of exposure is achieved for a portion of the photoresist member 1110 by light emitted by the light-emitting elements 30, forming a first portion 1112. The first portion 1112 is formed on the light extraction surface 30S for each light-emitting element 30 so as to cover a portion of the light extraction surface 30S. As shown in FIGS. 5 and 6 , the first portion 1112 contacts the light extraction surface 30S at a lower end 1112T of the first portion 1112, and the lower end 1112T covers most of the light extraction surface 30S.

[0061] The first portion 1112 is exposed to the light from the light emitting element 30 and becomes a solid having a surface with a substantially uniform amount of exposure. As shown in Fig. 6, the first portion 1112 has a shape with rounded corners.

[0062] 5 is formed, a thermosetting resin is disposed on the first surface 12a, the wiring layer 20, and the portion of the light-emitting element 30 that is not covered by the first portion 1112 so as to cover these. The intermediate member 1100a on which the thermosetting resin is disposed is heat-treated to harden the thermosetting resin. Thereafter, the first portion 1112 and the hardened thermosetting resin are cut to form the cut first portion 1112a and the light-shielding member 50, as shown in FIG. 7A, thereby forming the intermediate member 1100b.

[0063] In the manufacturing method of the light-emitting module 100a according to the modified example shown in Fig. 2B, light is emitted laterally from the side surface 30L of the light-emitting element 30a, so that the photoresist material located on the side surface 30L of the light-emitting element 30a is also exposed to light and hardened. Therefore, as shown in Fig. 7B, in the intermediate member 1100b1, the first portion 1112a1 is formed to be located on the side surface 30L of the light-emitting element 30a.

[0064] As shown in Fig. 8, the first portion 1112a is removed to form the recess 55, thereby forming the intermediate member 1100c. Reactive ion etching (RIE), for example, can be used to remove the first portion 1112a. Similarly, in the case of the modified light-emitting module 100a shown in Fig. 2B, the recess 55a shown in Fig. 2B can be formed by removing the first portion 1112a1 shown in Fig. 7B.

[0065] After forming the recess 55 by RIE, the light-transmitting member 60 shown in FIG. 2A is disposed on the upper surface 50T of the light-shielding member 50, on the inner wall surface 50W, and on the light extraction surface 30S exposed from the light-shielding member 50 via the edge portion 50E2, and the wavelength conversion member 70 shown in FIG. 2A is disposed on the light-transmitting member 60, thereby forming the light-emitting module 100 shown in FIG. 2A . The wavelength conversion member 70 may be disposed on the upper surface 50T of the light-shielding member 50 of the intermediate member 1100c and on the recess 55 without disposing the light-transmitting member 60. The support substrate 1101 can also be removed by, for example, laser lift-off or the like.

[0066] In this manner, the light emitting modules 100 and 100a can be manufactured.

[0067] 9 is a schematic exploded view illustrating one step of a manufacturing method for an image display device having a light-emitting module according to the first embodiment. As shown in FIG. 9, the light-emitting module 100 according to the present embodiment described above and the liquid crystal module 2 are prepared. The light-emitting module 100 is incorporated into the rear surface of the liquid crystal module 2 to manufacture the image display device 1. The light-emitting module 100 is incorporated into the liquid crystal module 2 on the side opposite the screen 2a thereof, and functions as a backlight for displaying the liquid crystal screen of the liquid crystal module 2 in the image display device 1.

[0068] The effects of the manufacturing method for the light emitting module 100 according to this embodiment will be described. The same applies to the manufacturing method for the light emitting module 100a according to the modified example, and the following description will use symbols and the like related to the manufacturing method for the light emitting module 100. Generally, in a light emitting module in which a plurality of light emitting elements 30 are arranged in a matrix, in order to improve the light extraction efficiency of the light emitting elements 30, it is necessary to sufficiently increase the area of ​​the opening that exposes the light extraction surface 30S from the light blocking member.

[0069] 2A , the wiring of the wiring layer 20 is arranged around the light-emitting element 30. If the area of ​​the opening exposing the light extraction surface 30S from the light-shielding member 50 is made sufficiently large, part of the wiring is exposed from the light-shielding member 50 through the opening. Each wiring of the wiring layer 20 contains a metal material such as Cu. When light emitted from the light-emitting element 30 is irradiated onto a metal material, at least part of the irradiated light is absorbed by the metal material. As a result, the substantial light extraction efficiency of the light-emitting element 30 decreases.

[0070] Thus, in order to improve the light extraction efficiency of the light emitting element 30, it is necessary to control the formation position and shape of the opening that exposes the light extraction surface 30S from the light blocking member 50 with high precision.

[0071] Conventionally, the process of forming the openings that expose the light extraction surface 30S from the light-shielding member is performed as follows: First, the intermediate member 1100 shown in Fig. 3 is prepared, and then the intermediate member 1100 is aligned with the positions of the plurality of light-emitting elements 30, and the photoresist member is exposed to light using an exposure device to form a plurality of masks on the plurality of light-emitting elements, respectively.

[0072] Thereafter, a thermosetting resin is disposed and cured to form a light-shielding member so as to cover the first surface 12 a, the wiring layer 20, and the plurality of light-emitting elements 30. The plurality of masks are removed using RIE or the like to expose the light extraction surfaces 30S of the plurality of light-emitting elements 30 from the light-shielding member 50.

[0073] When performing the conventional process described above, the mask formation position needs to be accurately set after accurately measuring the positions of the light emitting elements 30. However, the position measurement is subject to accuracy limitations imposed by the measurement system, and considering variations in the position of the light emitting elements 30 for each intermediate member, it becomes necessary to measure the position of the light emitting elements 30 for each intermediate member, which requires a great deal of time.

[0074] In the manufacturing method of the light-emitting module 100 according to this embodiment, an intermediate member 1100 is prepared, on which a photoresist member 1110 is disposed so as to cover the light extraction surface 30S of the light-emitting element 30. The photoresist member 1110 is exposed by emitting light from the light-emitting element 30 for a predetermined period of time. This allows an intermediate member 1100a having a first portion 1112 formed thereon to be formed at the position where the light-emitting element 30 is disposed. Using the first portion 1112 as a mask, a thermosetting resin is disposed on the intermediate member 1100a including the first portion 1112 and cured. The cured thermosetting resin is then ground together with the first portion 1112 to a desired thickness to remove the first portion 1112a. Therefore, in the XY plan view, the recess 55 formed by removing the first portion 1112a can be formed at a position with reduced deviation from the position where the light-emitting element 30 is disposed.

[0075] In this way, in the manufacturing method of the light-emitting module 100 according to this embodiment, the photoresist material 1110 is exposed to the light emitted by the light-emitting element 30 and used as a mask for forming the recess 55, thereby eliminating the need for an exposure device and simplifying the manufacturing process of the light-emitting module 100.

[0076] Furthermore, because the light-emitting element 30 is caused to emit light and the photoresist member 1110 on the light extraction surface 30S is exposed, the shape of the lower end 1112T of the first portion 1112, which serves as a mask for the recess 55, can be made to substantially match the shape of the light extraction surface 30S in the XY plane view. Therefore, most of the area of ​​the light extraction surface 30S can be exposed from the light-shielding member 50 via the edge portion 50E2 of the light-shielding member 50 formed after removing the first portion 1112a, thereby improving the light extraction efficiency of the light-emitting element 30.

[0077] The light emitting element 30 is covered with the light shielding member 50 except for the light extraction surface 30S exposed from the light shielding member 50, and metal members arranged near the light emitting element 30, such as the wiring layer 20 on the support member 12, can also be covered with the light shielding member 50. This prevents light emitted from the light extraction surface 30S and directed toward the wiring layer from being absorbed by the metal material contained in the wiring of the wiring layer, thereby improving the substantial light extraction efficiency.

[0078] The cross-sectional shape of the recess 55 is determined according to the shape of the first portion 1112. The shape of the first portion 1112 is determined according to the light distribution characteristics and exposure amount of the light-emitting element 30. Therefore, in the XY plane view, the area surrounded by the edge portion 50E1 on the upper surface 50T side of the light-shielding member 50 can be made larger than the area surrounded by the edge portion 50E2 on the lower surface 50B side of the light-shielding member 50. Therefore, light from the light extraction surface 30S can be emitted so as to be spread by the inner wall surface 50W of the recess 55.

[0079] The shape of the first portion 1112 of the photoresist member 1110 that is exposed to light can be controlled by the amount of exposure, which is the product of the brightness of the light emitted from the light emitting element 30 and the light emission time.

[0080] For example, the size of the first portion 1112 can be increased by increasing the current value flowing through the light-emitting element 30 to increase the brightness of the light and increase the amount of exposure. Conversely, the size of the first portion 1112 can be reduced by decreasing the current flowing through the light-emitting element 30 to decrease the brightness of the light and decrease the amount of exposure.

[0081] The exposure amount of the photoresist member 1110 can be controlled by the time for which light is irradiated onto the photoresist member 1110. When the same current is passed through the plurality of light-emitting elements 30 to make the brightness uniform and the time for which light is irradiated onto the photoresist member 1110 is shortened, the shape of the first portion 1112 can be made smaller. When the same current is passed through the plurality of light-emitting elements 30 to make the brightness uniform and the time for which light is irradiated onto the photoresist member 1110 is lengthened, the shape of the first portion 1112 can be made larger.

[0082] In one light-emitting module 100, the characteristics of the multiple light-emitting elements 30 may vary, and even when the same current is passed through the multiple light-emitting elements 30, the light emitted from the multiple light-emitting elements 30 may have different brightnesses. In the manufacturing method for the light-emitting module 100 according to this embodiment, for example, when the same current is passed through the multiple light-emitting elements 30 for the same period of time, the light-emitting elements 30 with low brightness have a smaller amount of exposure to the photoresist member 1110, and the light-emitting elements 30 with high brightness have a larger amount of exposure to the photoresist member 1110. When the amount of exposure is small, the first portion 1112 formed by the light-emitting elements 30 has a relatively small shape. On the other hand, when the amount of exposure is large, the first portion 1112 has a relatively large shape.

[0083] The light emitting element 30 that emits light with a lower brightness emits light through the small recess 55 formed by the small-shaped first portion 1112. Since the light with a lower brightness is emitted through the narrow and small recess 55, the reduction in brightness due to the spread of the light is small.

[0084] The light emitting element 30 that emits light with higher brightness emits light through the large recess 55 formed by the large-shaped first portion 1112. Since the light with high brightness is emitted through the wide and large recess 55, the light spreads, and the spreading reduces the brightness.

[0085] Therefore, when these light-emitting elements 30 are simultaneously driven to emit light with the same current, the luminance variation is relatively reduced, and the in-plane luminance during light emission of the light-emitting module 100 as a surface-emitting device can be made closer to uniform. This effect is even more effective when the light-emitting module 100 is used as an image display rather than a backlight.

[0086] In the manufacturing method of the light emitting module 100 according to this embodiment, the photoresist member 1110 is exposed to light emitted by the light emitting element 30, and the first portion 1112 is formed in a self-aligned manner. When the light emitting element 30 emits light including ultraviolet light, a photoresist member 1110 that is exposed to ultraviolet light can be used. Photoresists that are exposed to light with a short wavelength, such as ultraviolet light, have high processing accuracy, so the shape of the first portion 1112 can be controlled more precisely, and the recess 55 can be formed in a desired shape.

[0087] Second Embodiment FIG. 10 is a schematic perspective view illustrating a light-emitting module according to a second embodiment. FIG. 11 is a schematic enlarged view of a portion XI in FIG. 10 . FIG. 12 is a schematic cross-sectional view taken along line XII-XII in FIG. 10 . FIG. 13 is a schematic enlarged view of a portion XIII in FIG. 12 . As shown in FIGS. 10 to 13 , a light-emitting module 200 according to this embodiment includes a substrate 210, a plurality of light-emitting elements 30, a light-blocking member 250, and a light-transmitting member 60. The light-emitting module 200 further includes a package substrate 240, a wire 280, and a wire protection member 290. Note that in FIG. 10 , in order to more clearly illustrate each component in relation to FIGS. 11 to 13 , portions of the light-transmitting member 60 and the wire protection member 290 are removed. As a result, FIG. 10 shows portions of the wire 280 and the substrate 210 below the light-transmitting member 60.

[0088] As shown in FIG. 11 , in the light-emitting module 200, the plurality of light-emitting elements 30 are arranged in a matrix in an XY plane view. The number of rows and columns in which the plurality of light-emitting elements 30 are arranged can be appropriately set as needed, for example, depending on the application. As in the first embodiment, the arrangement of the plurality of light-emitting elements 30 is not limited to a matrix arrangement, and may be, for example, a houndstooth lattice arrangement or a hexagonal lattice arrangement. Furthermore, the spacing between the light-emitting elements 30 and the shape of the substrate 210 in an XY plane view can also be appropriately set as needed. The configuration of the plurality of light-emitting elements 30 is the same as in the first embodiment, and detailed description thereof will be omitted.

[0089] When viewed from above, the light blocking member 250 is disposed around each of the plurality of light emitting elements 30. The light emitting module 200 has recesses 255 that open at positions corresponding to the plurality of light emitting elements 30.

[0090] As shown in FIG. 13 , the light-blocking member 250 has an upper surface 250T and a lower surface 250B1 in a cross-sectional view. The recess 255 is defined by an inner wall surface 250W of the light-blocking member 250 and a light-extraction surface 30S serving as a bottom surface. The inner wall surface 250W is disposed between the upper surface 250T and the light-extraction surface 30S. The light-blocking member 250 further has a surface 250B2. The surface 250B2 is located on the opposite side of the lower surface 250B1, corresponding to the position of the recess 255 in an XY-plane view. The surface 250B2 contacts the electrode-forming surface 30T of the light-emitting element 30. In the example of FIG. 13 , the surface 250B2 intersects with a plane of the inner wall surface 250W that contacts the side surface 30L of the light-emitting element 30 below the light-extraction surface 30S.

[0091] The electrode 32a of the light-emitting element 30, together with the connecting member 222a, penetrates from the surface 250B2 to the lower surface 250B1. The electrode 32b of the light-emitting element 30, together with the connecting member 222b, penetrates from the surface 250B2 to the lower surface 250B1. That is, the light-shielding member 250 is disposed on the upper surface 212a between the side surfaces 30L of two adjacent light-emitting elements, and is also disposed between the electrode formation surface 30T of one light-emitting element 30 and the upper surface 212a. When the light-shielding member 250 contains a light-reflective material, the light-shielding member 250 reflects light emitted downward or to the sides of the light-emitting element 30, and the reflected light can be converted into light emitted from the light extraction surface 30S, thereby improving the light extraction efficiency of the light-emitting element 30.

[0092] 11 and 13 , a part of the light extraction surface 30S is exposed from the light blocking member 250 via the edge portion 250E2. Preferably, most of the light extraction surface 30S is exposed from the light blocking member 250 via the edge portion 250E2. This improves the light extraction efficiency of the light-emitting element 30.

[0093] In the XY plane view, an edge 250E1 of the inner wall surface 250W on the upper surface 250T side of the recess 255 is located outside an edge 250E2. The area of ​​the region surrounded by the edge 250E1 is larger than the area of ​​the region surrounded by the edge 250E2.

[0094] For example, in the XY plane view, the area surrounded by the edge 250E1 has a rectangular shape with rounded corners. The area surrounded by the edge 250E2 also has a rectangular shape with rounded corners. For example, the corners of the rectangular area surrounded by the edge 250E1 are rounder than the corners of the rectangular area surrounded by the edge 250E2.

[0095] As in the first embodiment, in the XY plane view, the shape of the areas surrounded by edge portion 250E1 and edge portion 250E2 is not limited to a rectangle with rounded corners, but can be determined according to the shape of light-emitting element 230 in the XY plane view.

[0096] In the XY plane view, because edge portion 250E1 is located outside edge portion 250E2, inner wall surface 250W has the shape of a frustum side surface that spreads from bottom surface 250B1 toward top surface 250T of light blocking member 250. Inner wall surface 250W may spread linearly from edge portion 250E2 toward edge portion 250E1, as in the specific example of Fig. 13, or may spread from edge portion 250E2 toward edge portion 250E1 while forming a concave surface when viewed from the inside of recess 255, as in the first embodiment.

[0097] The light-shielding member 250 may contain the same material as the light-shielding member 50 in the first embodiment, and may preferably be made of, for example, a silicone resin or an epoxy resin. As will be described with reference to Figures 21 and 22, the light-shielding member may contain a photosensitive agent such as a photoresist.

[0098] The substrate 210 includes a support member 212 and a wiring layer 220. As shown in FIG. 12 , the support member 212 has an upper surface 212a and a lower surface 212b. The lower surface 212b is the surface opposite the upper surface 212a. As shown in FIG. 13 , the wiring layer 220 is disposed on the upper surface 212a side within the substrate 210. Connection members 222a and 222b are disposed on the wiring layer 220. The connection members 222a and 222b are electrically connected to the wiring layer 220. The connection members 222a and 222b are disposed to correspond to the electrodes 32a and 32b of the light-emitting element 30, and the light-emitting element 30 is electrically connected to the wiring layer 220 via the connection members 222a and 222b.

[0099] The substrate 210 is, for example, a semiconductor substrate with an integrated circuit built in, and the support member 212 includes, for example, silicon. The substrate 210 is, for example, an application specific integrated circuit (ASIC) substrate. The wiring layer 220 is appropriately configured within the support member 212 depending on the function of the ASIC.

[0100] The light-emitting elements 30 are arranged on the wiring layer 220 via connection members 222a and 222b. The plurality of light-emitting elements 30 are electrically connected to each other by the wiring layer 220, and, for example, the light-emitting elements in a set area emit light at a set brightness according to a function set in the ASIC.

[0101] The light-transmitting member 60 is disposed on the light extraction surface 30S, the upper surface 250T of the light-blocking member 250, and the inner wall surface 250W at the top of the recess 255. The light-transmitting member 60 can be made of the same material as in the first embodiment. Furthermore, a wavelength conversion member may be disposed on the light-transmitting member 60, or a wavelength conversion member may be disposed instead of the light-transmitting member 60.

[0102] As shown in FIGS. 10 and 12 , the substrate 210 is disposed on a package substrate 240. The package substrate 240 includes, for example, a flat base and wiring disposed on at least the upper surface of the base. The base is preferably made of a material with high heat dissipation properties, and more preferably a material with high light-blocking properties and strength. Specific examples of suitable materials include metals such as aluminum (Al) and copper (Cu), ceramics such as alumina, aluminum nitride, and mullite, resins such as phenolic resin, epoxy resin, polyimide resin, BT resin (bismaleimide triazine resin), and polyphthalamide (PPA), and composites composed of resin and metal or ceramic. The package substrate 240 may be flat or may have a cavity on its upper surface to accommodate the substrate 210. Examples of wiring materials include metals such as copper (Cu), silver (Ag), gold (Au), aluminum (Al), platinum (Pt), titanium (Ti), tungsten (W), palladium (Pd), iron (Fe), and nickel (Ni), or alloys thereof.

[0103] As an example, package substrate 240 has an insulating member such as epoxy resin laminated on a metallic base such as Al or Cu, and has wiring arranged on the surface and inside. Part of the wiring includes multiple connection pads on the upper surface of package substrate 240, and another part of the wiring includes multiple connection pads on the lower surface of package substrate 240.

[0104] The upper and lower surfaces of the package substrate 240 form heat dissipation sections in which a metal base is exposed from the base material. The heat dissipation sections are located approximately in the center of the package substrate 240 when viewed in the XY plane. The connection pads on the upper and lower surfaces are located on both sides of the heat dissipation section, sandwiching the heat dissipation section between them. These connection pads are arranged, for example, along the long sides of the package substrate 240.

[0105] Wire 280 electrically connects package substrate 240 and substrate 210. Wire 280 is disposed between a connection pad on the upper surface of package substrate 240 and a connection pad on substrate 210, electrically connecting them. Wire 280 includes a metal material having high conductivity, such as gold (Au).

[0106] The wire protection member 290 is disposed so as to cover the wires 280, extending from the upper surface of the substrate 210 to the upper surface of the package substrate 240. The wire protection member 290 covers the wires 280 to protect them. The wire protection member 290 may be light-transmitting or light-blocking. The wire protection member 290 includes a base material made of at least a light-transmitting resin, and the base material may also include a light-reflecting material or a light-absorbing material. Silicone resin or the like can be used as the base material.

[0107] (Manufacturing Method of Light-Emitting Module 200) FIGS. 14 to 20 are schematic cross-sectional views illustrating a step in a manufacturing method of a light-emitting module according to the second embodiment. As shown in FIG. 14 , an intermediate member (first intermediate member) 1200 is prepared, including a substrate 210, a plurality of light-emitting elements 30, and a photoresist member 1210. A current is supplied to the plurality of light-emitting elements 30 to cause them to emit light, thereby exposing the photoresist member 1210. In the intermediate member 1200, the substrate 210 is the same as the substrate 210 described in connection with FIGS. 10 to 13 and includes a support member 212 and a wiring layer 220. A current is supplied to the plurality of light-emitting elements 30 via the wiring layer 220. Note that, to avoid clutter, the wiring layer 220 and connecting members 222a and 222b shown in FIG. 13 are omitted from the substrate 210 in FIGS. 14 to 20 . The same applies to FIGS. 21 and 22 , which illustrate a modified example of this manufacturing method.

[0108] 14 , in the intermediate member 1200, a photoresist member 1210 is disposed on the substrate 210 and the light-emitting element 30, integrally covering them. The photoresist member 1210 is a negative photoresist, and the same material as in the first embodiment can be used. The light-emitting element 30 emits light L in accordance with the light distribution characteristics of the light-emitting element 30.

[0109] In the intermediate member 1200, the unexposed portions of the photoresist member 1210 are removed to form the intermediate member 1200a, as shown in Fig. 15. In the intermediate member 1200a, a predetermined amount of exposure is achieved in a portion of the photoresist member 1210 by the light emitted by the light emitting elements 30, forming exposed portions 1212, and the unexposed portions are removed. The exposed portions 1212 are formed for each light emitting element 30 in the vicinity of the light emitting elements 30, and are formed as a single unit when moving away from the light emitting elements 30 in the positive direction of the Z axis.

[0110] The upper portion of the exposed portion 1212 of the intermediate member 1200a shown in Fig. 15 is removed by polishing or the like, to form an intermediate member 1200b having a plurality of first portions 1212a as shown in Fig. 16. The first portions 1212a contact the light extraction surface 30S at their lower ends 1212B, and the lower ends 1212B cover most of the light extraction surface 30S.

[0111] As shown in FIG. 17 , a nozzle NZ1 for injecting thermosetting resin 1250 is positioned above the intermediate member 1200b. The thermosetting resin 1250 injected from the nozzle NZ1 is disposed so as to cover the upper surface (first surface) 212a of the intermediate member 1200b, thereby forming an intermediate member 1200c. More specifically, the thermosetting resin 1250 is disposed on the upper surface 212a. The thermosetting resin 1250 is disposed on the side surface 30L, electrode formation surface 30T, and light extraction surface 30S of the light-emitting element 30, in portions not covered by the first portion 1212a. In other words, the thermosetting resin 1250 is disposed between adjacent light-emitting elements 30, as well as between the electrode formation surface 30T and the upper surface 212a. The thermosetting resin 1250 is disposed on the upper surface 1212T and side surface 1212L of the first portion 1212a.

[0112] 18, a nozzle NZ2 that ejects a gas such as air is disposed above the intermediate member 1200c. The nozzle NZ2 is disposed so that the gas ejection direction is tilted from the Z axis, and ejects the gas from diagonally above the thermosetting resin 1250 disposed on the intermediate member 1200c. The upper surface of the thermosetting resin 1250 before hardening is flattened by the gas ejected from the nozzle NZ2. After the thermosetting resin 1250 has been flattened, the intermediate member 1200c is heat-treated to harden the thermosetting resin 1250.

[0113] 18, the thermosetting resin 1250 hardened on the first portion 1212a is removed by, for example, blasting to expose the upper surface 1212T of the first portion 1212a, thereby forming the intermediate member 1200d shown in FIG. 19. The blasting may be performed using, for example, dry ice (CO ２ Dry ice particles are softer than the semiconductor material that constitutes the light emitting element 30, so by spraying dry ice with a sufficiently small particle size, the blasting process can be performed without damaging the light emitting element 30.

[0114] 20, the first portion 1212a is removed to form a recess 255, thereby forming an intermediate member 1200e. The first portion 1212a can be removed by RIE, for example.

[0115] Thereafter, the wavelength conversion member 70 shown in FIG. 13 is disposed on the intermediate member 1200e, and the light emitting module 200 can be manufactured.

[0116] The effects of the manufacturing method of the light emitting module 200 according to this embodiment will be described. The manufacturing method of the light emitting module 200 according to this embodiment has the same effects as the manufacturing method of the light emitting module 100 according to the first embodiment. That is, the first portion 1212a is a photoresist material that is exposed to light emitted by the light emitting element 30 and has reduced solubility in a developer. The light shielding member 250 can be formed using the first portion 1212a as a mask. This can reduce misalignment between the position of the light emitting element 30 and the position where the recess 255 is formed. This can expose most of the light extraction surface 30S from the light shielding member 250, while covering the portion of the light emitting element 30 other than the exposed light extraction surface 30S with the light shielding member 250, thereby improving the light extraction efficiency of the light emitting element 30.

[0117] As described above, in the manufacturing method of the light-emitting module 200 according to this embodiment, it is possible to suppress misalignment between the position of the light-emitting element 30 and the formation position of the recess 255, and therefore it is possible to sufficiently increase the area of ​​the light extraction surface 30S of the light-emitting element 30 that is exposed from the light-blocking member 250 in the recess 255. Furthermore, by suppressing misalignment between the position of the light-emitting element 30 and the formation position of the recess 255, it is possible to arrange the light-blocking member 250 having an inner wall surface 250W of sufficient height between adjacent light-emitting elements 30, 30. Therefore, it is possible to suppress light leakage from the light-emitting element 30 and improve the light extraction efficiency of the light-emitting element 30.

[0118] Furthermore, in the manufacturing method of the light-emitting module 200 according to this embodiment, by suppressing misalignment between the positions of the light-emitting elements 30 and the formation positions of the recesses 255, it is possible to arrange small light-emitting elements 30 on the substrate 210 with high packaging density. Therefore, it is possible to easily manufacture a light-emitting module 200 that achieves sufficient brightness when all of the light-emitting elements 30 are activated. Furthermore, by finely controlling the light-emitting area and brightness of the light-emitting elements 30, it is possible to easily manufacture a light-emitting module 200 that can achieve a variety of light-emitting patterns.

[0119] 21 and 22 are schematic cross-sectional views illustrating a step of a modified method for manufacturing a light-emitting module according to the second embodiment. In this modified example, a positive photoresist material is used to form a light-shielding member instead of a negative photoresist material. The light-shielding member 350 of the light-emitting module manufactured by this modified manufacturing method contains a photosensitive agent for the photoresist. Preferably, the photoresist material may contain a light-scattering material that scatters light, and may also contain a light-absorbing material depending on the application of the light-emitting module 200.

[0120] 21 , an intermediate member 1300 is prepared, and a current is supplied to the plurality of light-emitting elements 30 to cause them to emit light, thereby exposing the photoresist member 1350. In the intermediate member 1300, the photoresist member 1350 integrally covers the upper surface 212 a of the support member and the plurality of light-emitting elements 30.

[0121] The light emitted from the light-emitting element 30 exposes a first portion 1352 of the photoresist member 1350 located above the light extraction surface 30S in accordance with the light distribution characteristics of the light-emitting element 30. The positive photoresist member 1350 is irradiated with light for a predetermined time, and the portion that has reached a predetermined exposure amount becomes highly soluble in a developer, so that the first portion 1352 of the photoresist member 1350 becomes highly soluble in a developer.

[0122] As shown in FIG. 22, the portion that has been exposed to a predetermined amount of light from the light emitting element 30 is removed to expose a part of the light extraction surface 30S, and a recess 255 is formed to form an intermediate member 1300a.

[0123] Thereafter, the light-transmitting member 60 is disposed on the light-blocking member 350 and the light-extraction surface 30S of the intermediate member 1300a, whereby the light-emitting module 200 can be manufactured.

[0124] In the intermediate member 1300, a chemically amplified photoresist may be used as the photoresist member 1350. When the photoresist member 1350 is a chemically amplified photoresist, a step of heat-treating the intermediate member 1300 is added after the intermediate member 1300 shown in FIG. 21 is exposed to light from the light emitting element 30, and then the exposed first portion 1352 is removed.

[0125] The chemically amplified photoresist contains a photoacid generator, and the acid generated by exposure increases the solubility of the exposed portion. Heat treatment further generates more acid, further increasing the solubility of the exposed portion. This enables the formation of fine patterns, and by applying this modified example, the shape of the first portion 1352 can be controlled more precisely, allowing the recess 255 to be formed more precisely.

[0126] According to this modification, by using a positive photoresist member 1350, the process of disposing and planarizing the thermosetting resin shown in Fig. 17 and then removing the hardened photoresist member can be reduced to a single process of removing the photoresist member, thereby shortening the process and reducing costs.

[0127] Furthermore, a chemically amplified photoresist can be used for the photoresist member 1350, which allows for precise formation of the recesses 255. This allows for narrower spacing between the light emitting elements 30, and allows for the manufacture of a light emitting module 200 employing even smaller light emitting elements 30.

[0128] As in the modified example of the manufacturing method for the light-emitting module 200 shown in FIGS. 21 and 22, a positive photoresist material may be used instead of a negative photoresist material to form the light-shielding member. In the manufacturing methods for the light-emitting module 100 according to the first embodiment and the light-emitting module 100a according to the modified example described with reference to FIGS. 3 to 8, the photoresist material can be changed from a negative type to a positive type. That is, in the manufacturing method for the light-emitting modules 100 and 100a, by changing the photoresist material from a negative type to a positive type, the photoresist material after exposure can be used as a light-shielding member. This achieves the same effects as the manufacturing method for the light-emitting module 200 according to the second embodiment.

[0129] Third Embodiment Fig. 23 is a schematic top view illustrating an image display device according to a third embodiment. As shown in Fig. 23, the image display device 300 includes a substrate 310, a plurality of light-emitting elements 30, a light-shielding member 50, and a wavelength conversion member 70. In this embodiment, the configuration of the substrate 310 differs from that of the first embodiment, but the other configurations are the same as those of the light-emitting module 100 according to the first embodiment. The same components are denoted by the same reference numerals, and detailed descriptions thereof will be omitted as appropriate.

[0130] The plurality of light-emitting elements 30, the light-shielding member 50, and the wavelength conversion member 70 are configured in the same manner as in the first embodiment. That is, as shown in Fig. 2A and other figures, the plurality of light-emitting elements 30 are arranged in the plurality of recesses 55 of the light-shielding member 50 arranged in a matrix. The wavelength conversion member 70 is arranged on the plurality of light-emitting elements 30 and the light-shielding member 50.

[0131] The substrate 310 includes a support member 312 and a wiring layer 320. The support member 312 can be made of, for example, the same material as in the first embodiment. The substrate 310 further includes a current signal drive circuit 382, ​​a row selection drive circuit 384, and an external circuit connection connector 386. For example, the wiring layer 320 includes a first wiring layer 322 and a second wiring layer 324. The first wiring layer 322 is electrically connected to the current signal drive circuit 382, ​​and the second wiring layer 324 is electrically connected to the row selection drive circuit 384. The current signal drive circuit 382 and the row selection drive circuit 384 are electrically connected to the external circuit connection connector 386 and, via the external circuit connection connector 386, are electrically connected to, for example, an image display control circuit provided outside the image display device 300. The image display device 300 according to this embodiment displays, for example, an image controlled by the image display control circuit.

[0132] 24 is a schematic block diagram illustrating an equivalent circuit of the image display device according to the third embodiment. As shown in FIG. 24 , in the image display device 300 according to this embodiment, the light-emitting element 30 is electrically connected to the wiring of the first wiring layer 322 and the wiring of the second wiring layer 324.

[0133] The current signal drive circuit 382 includes a current source 382a. The current source 382a is electrically connected to the cathode electrode of the light-emitting element 30, for example, via the first wiring layer 322. The current value output by the current source 382a is set, for example, by an image display control circuit provided outside the image display device 300, and the light-emitting element 30 emits light at a brightness corresponding to the current value.

[0134] The row selection drive circuit 384 includes a changeover switch 384a. Power supply lines V301 and V302 are connected to the row selection drive circuit 384. The power supply line V302 is connected to the negative electrode of the DC power supply VDC. The potential of the power supply line V302 is, for example, the ground potential, i.e., 0 V. The power supply line V301 is connected to the positive electrode of the DC power supply VDC. The potential of the power supply line V301 is higher than the ground potential. The changeover switch 384a is connected to, for example, the anode electrode of the light-emitting element 30 via a wiring in the second wiring layer 324. The changeover switch 384a switches between connecting the anode electrode to the power supply line V301 and the power supply line V302. The DC power supply VDC is set to output a voltage sufficiently higher than the threshold voltage of the light-emitting element 30. When the anode electrode of the light-emitting element 30 is connected to the power supply line V301 by the changeover switch 384a, a current flows through the light-emitting element 30, causing the light-emitting element 30 to emit light. When the anode electrode of the light emitting element 30 is connected to the power supply line V302 by the changeover switch 384a, the current to the light emitting element 30 is cut off.

[0135] For example, the image display device 300 can operate as follows. That is, the current value flowing through the light-emitting elements 30 arranged along the Y-axis direction is set by the current source 382a of the current signal drive circuit 382, ​​thereby setting the brightness of the light-emitting elements 30 when they are turned on. A selector switch 384a is used to select which row of the light-emitting elements 30 arranged along the X-axis direction is selected, thereby selecting whether or not to emit light. This allows the image display device 300 to display a desired image.

[0136] The image display device 300 can be manufactured using the same manufacturing method as the light-emitting module 100 according to the first embodiment. That is, an intermediate member including a substrate 310, a plurality of light-emitting elements 30, and a photoresist member is prepared. The photoresist member can be a photoresist similar to the photoresist member 1110 shown in FIG. 3 . The intermediate member is then exposed to light emitted from the light-emitting elements 30 to form a first portion, a thermosetting resin is disposed, and the first portion is removed to form a recess, in the same manner as in the cases shown in FIGS. 4 to 8 . Then, the wavelength conversion member 70 is disposed. A translucent member may be disposed between the wavelength conversion member 70 and the light-blocking member 50, and between the wavelength conversion member 70 and the light-emitting elements 30.

[0137] The current signal drive circuit 382, ​​the row selection drive circuit 384, and the external circuit connection connector 386 are disposed on the first surface 312a of the support member 312, and are electrically connected to the light emitting elements 30 via the wiring layer 320. For example, the image display device 300 on which the current signal drive circuit 382, ​​the row selection drive circuit 384, and the external circuit connection connector 386 are mounted is housed in a housing.

[0138] In this manner, the image display device 300 can be manufactured as an image display device.

[0139] Fourth Embodiment Fig. 25 is a schematic top view illustrating an image display device according to a fourth embodiment. As shown in Fig. 25, the image display device 400 includes a substrate 410, a plurality of light-emitting elements 30, a light-blocking member 50, wavelength conversion members 470a, 470b, and 470c, and a light-transmitting member 460. In this embodiment, the configuration of the substrate 410 and the configurations of the wavelength conversion members 470a, 470b, and 470c and the light-transmitting member 460 differ from those of the light-emitting module 100 according to the first embodiment, but the other configurations are the same as those of the first embodiment. Identical components are denoted by the same reference numerals, and detailed description thereof will be omitted as appropriate.

[0140] The plurality of light-emitting elements 30 and the light-shielding member 50 are configured in the same manner as in the first embodiment. That is, as shown in Fig. 2A etc., the plurality of light-emitting elements 30 are arranged in the plurality of recesses 55 of the light-shielding member 50 arranged in a matrix.

[0141] The substrate 410 includes a support member 412 and a wiring layer 420. The support member 412 can be made of, for example, glass. The substrate 410 further includes a current signal drive circuit 482 and a row selection drive circuit 484. The current signal drive circuit 482 and the row selection drive circuit 484 are mounted on the support member 412 by, for example, TAB, and the TAB-mounted current signal drive circuit 482 and row selection drive circuit 484 are electrically connected to an external image display control circuit. The image display device 400 according to this embodiment displays, for example, an image whose display is controlled by the image display control circuit.

[0142] The wavelength conversion members 470a, 470b, and 470c are disposed on each light-emitting element 30. For example, the wavelength conversion member 470a is disposed on one light-emitting element 30, the wavelength conversion member 470b is disposed on the adjacent light-emitting element 30, and the wavelength conversion member 470c is disposed on the light-emitting element 30 adjacent thereto. The wavelength conversion members 470a, 470b, and 470c each include a base material and a different type of wavelength conversion material. The wavelength conversion material is dispersed in the base material and converts the wavelength of light emitted by the light-emitting element 30 into light having a predetermined wavelength. For example, all the light-emitting elements 30 emit ultraviolet light of the same wavelength. The wavelength conversion material contained in the wavelength conversion member 470a converts ultraviolet light into red light. The wavelength conversion material contained in the wavelength conversion member 470b converts ultraviolet light into green light. The wavelength conversion material contained in the wavelength conversion member 470c converts ultraviolet light into blue light.

[0143] As a result, one light-emitting element 30 and the wavelength conversion member 470a disposed thereon constitute a subpixel that emits red light. Another light-emitting element 30 and the wavelength conversion member 470b disposed thereon constitute a subpixel that emits green light. Yet another light-emitting element 30 and the wavelength conversion member 470c disposed thereon constitute a subpixel that emits blue light. A common light-transmitting member 460 is disposed on each of the multiple wavelength conversion members 470a, 470b, and 470c.

[0144] 26 is a schematic block diagram illustrating an equivalent circuit of the image display device according to the fourth embodiment. As shown in FIG. 26, the image display device 400 includes a plurality of drive circuits 486 that respectively cause a plurality of light-emitting elements 30 to emit light at a desired luminance and at a desired timing.

[0145] For example, the drive circuit 486 includes a selection transistor T1, a drive transistor T2, and a capacitor Cm. The drive transistor T2 is connected in series to the light-emitting element 30. The series circuit of the light-emitting element 30 and the drive transistor T2 is connected between power supply lines V401 and V402. Note that the power supply lines V401 and V402 are not shown in FIG. 25 to avoid complexity of the illustration. The selection transistor T1 is connected between a wiring constituting the first wiring layer 422 and the gate electrode of the drive transistor T2. The gate electrode of the selection transistor T1 is connected to a wiring constituting the second wiring layer 424. The capacitor Cm is connected between the gate electrode and source electrode of the drive transistor T2.

[0146] The drive circuit 486, which includes the selection transistor T1, the drive transistor T2, and a capacitor, is disposed on the support member 412 and is electrically connected by a wiring layer. The light-emitting element 30, like the drive circuit, is disposed on the support member 412 and is electrically connected to the drive circuit. The light-emitting element 30 and the drive circuit may be disposed on different layers of the substrate 410. For example, an interlayer insulating film may be disposed on the drive circuit, and the light-emitting element 30 may be disposed on the interlayer insulating film. The drive circuit and the light-emitting element are electrically connected via a connection member that penetrates the interlayer insulating film. The selection transistor T1 and the drive transistor T2 are thin-film transistors (TFTs), and the drive circuit including the TFTs can be formed using low-temperature polysilicon process technology.

[0147] In the specific example of FIG. 26 , one subpixel includes one light-emitting element 30, a drive circuit 486 connected to the light-emitting element 30, and wavelength conversion members 470 a, 470 b, and 470 c arranged on the light-emitting element 30 shown in FIG. 25 . One pixel consists of three subpixels that respectively emit red, green, and blue light. The drive transistor T2 drives the light-emitting element 30 with a current corresponding to a voltage value set by a current signal drive circuit 482. The selection transistor T1 selected by a selection signal output by a row selection drive circuit 484 is turned on to drive the drive transistor T2. The image display device 400 can display a desired image by appropriately setting the luminance of the three subpixels that emit three colors using an external image display control circuit and sequentially selecting them.

[0148] The image display device 400 can be manufactured using the same manufacturing method as the light-emitting module 100 according to the first embodiment. Specifically, an intermediate member including a substrate 410, a plurality of light-emitting elements 30, and a photoresist member is prepared. The substrate 410 includes not only the plurality of light-emitting elements 30 but also a drive circuit for driving the light-emitting elements 30. The photoresist member can be made of a photoresist similar to the photoresist member 1110 shown in FIG. 3. The intermediate member is then exposed to light emitted by the light-emitting elements 30 to form a first portion, a thermosetting resin is disposed, and the first portion is removed to form a recess, as in the case shown in FIGS. 4 to 8. A wavelength conversion member is then disposed. A translucent member may be disposed between the wavelength conversion member and the light-shielding member 50 and between the wavelength conversion member and the light-emitting element 30. Furthermore, a color filter may be disposed on the wavelength conversion member to improve the color development of each pixel.

[0149] The current signal drive circuit 482 and the row selection drive circuit 484 are disposed on the first surface 412a of the support member 412, and are electrically connected to the light emitting elements 30 via the wiring layer 420. For example, the image display device 400 on which the current signal drive circuit 482 and the row selection drive circuit 384 are mounted is housed in a housing.

[0150] In this manner, an image display device 400 capable of displaying color images can be manufactured.

[0151] (Fifth embodiment) The fifth embodiment is an example in which, in the manufacturing method of the light-emitting module according to the first embodiment, the exposed first portion 1112 of the photoresist member 1110 shown in FIG. 5 is used as a microlens in the final product.

[0152] A method for manufacturing the light-emitting module according to this embodiment will now be described. First, the steps shown in Figures 3 to 5 are carried out. As a result, a first portion 1112 is formed on each light-emitting element 30, as shown in Figures 5 and 6. The first portion 1112 is translucent, and its shape corresponds to the light distribution characteristics of the light-emitting element 30. In this way, the light-emitting module 101 according to this embodiment is manufactured.

[0153] Fig. 27 is a schematic cross-sectional view illustrating a light-emitting module according to the fifth embodiment. As shown in Fig. 27, in the light-emitting module 101 according to this embodiment, a plurality of light-emitting elements 30 are provided on a substrate 10, and one lens 80 is provided on each light-emitting element 30. The lens 80 is in contact with the light-emitting element 30. The lens 80 is the first portion 1112 of the photoresist member 1110 described above. Therefore, the lens 80 is a convex lens made of a light-transmitting material whose chemical stability has been improved by exposure of a negative photoresist.

[0154] In the light-emitting module 101, the light-blocking member 50, the light-transmitting member 60, and the wavelength conversion member 70 are not provided. Furthermore, the adhesion layer 16, the planarization layer 17, the adhesive layer 18, and the buffer layer 19 are not shown, but may or may not be provided. Note that, although the internal structures of the substrate 10 and the light-emitting element 30 are omitted in FIG. 27 , the configurations of the substrate 10 and the light-emitting element 30 are the same as those in the first embodiment. Furthermore, in FIG. 27 , an example of the path of light emitted from the light-emitting element 30 is indicated by a dashed arrow. The same applies to similar figures described later.

[0155] 27 , according to this embodiment, light emitted from the light extraction surface 30S of each light-emitting element 30 is incident on the lens 80 disposed directly above it and is condensed by the lens 80. As a result, most of the light emitted from the light-emitting element 30 is directed upward, and the intensity of the light emitted on the optical axis (directly above) of the light-emitting module 101 is improved.

[0156] Furthermore, according to this embodiment, the lens 80 can be formed in a self-aligned manner directly above each light-emitting element 30. As a result, the positional accuracy and shape accuracy of the lens 80 are high, and it is possible to reduce the manufacturing cost of the light-emitting module 101. Other configurations, manufacturing methods, operations, and effects of this embodiment are the same as those of the first embodiment.

[0157] Sixth Embodiment This embodiment differs from the fifth embodiment in that a light-shielding member 50 is provided. Figures 28 to 30 are schematic cross-sectional views illustrating a step of a manufacturing method for a light-emitting module according to the sixth embodiment. Figure 31 is a schematic cross-sectional view illustrating the light-emitting module according to the sixth embodiment.

[0158] 3 to 8 are first carried out in the method for manufacturing the light-emitting module according to this embodiment. Next, as shown in Fig. 28, a photoresist member 1120 made of a negative photoresist is placed on the light-shielding member 50 and the light-emitting element 30. The photoresist member 1120 is also placed in the recess 55 of the light-shielding member 50.

[0159] 29 , power is supplied to the light emitting element 30 via the wiring layer 20 to turn on the light emitting element 30. As a result, light emitted from the light emitting element 30 travels through the photoresist member 1120, exposing each portion of the photoresist member 1120. A portion of the light emitted from the light emitting element 30 is reflected by the inner wall surface 50W of the light-shielding member 50 and travels through the photoresist member 1120. As a result, the exposure amount in the second portion 1122 of the photoresist member 1120 located near the light emitting element 30 becomes equal to or greater than the threshold value.

[0160] 30 , the photoresist member 1120 is developed. As a result, the second portion 1122 of the photoresist member 1120 remains, and the other portions are removed. As a result, the second portion 1122 of the photoresist member 1120 becomes the lens 81. In this manner, the light-emitting module 102 according to this embodiment is manufactured.

[0161] 31 , in the light-emitting module 102 according to this embodiment, a plurality of light-emitting elements 30 and a light-shielding member 50 are arranged on a substrate 10. A recess 55 is formed in the light-shielding member 50 directly above the light-emitting elements 30. A lens 81 is arranged on the light-shielding member 50 directly above the light-emitting elements 30.

[0162] The lower part of the lens 81 is disposed within the light-shielding member 50 and is in contact with the light-extraction surface 30S of the light-emitting element 30 and the inner wall surface 50W of the light-shielding member 50. Therefore, the shape of the lower part of the lens 81 corresponds to the light-extraction surface 30S of the light-emitting element 30 and the inner wall surface 50W of the light-shielding member 50. Furthermore, in the process shown in Fig. 29 , part of the light emitted from the light-emitting element 30 is reflected by the inner wall surface 50W of the light-shielding member 50 and then travels through the photoresist member 1120, so the shape of the upper part of the lens 81, i.e., the part disposed above the light-shielding member 50, does not necessarily match the light distribution characteristics of the light-emitting element 30 itself.

[0163] According to this embodiment, by combining the light-blocking member 50 and the lens 81, it is possible to control with a high degree of freedom the light distribution characteristics of the light emitted from the light-emitting element 30. Other configurations, manufacturing methods, operations, and effects of this embodiment are the same as those of the fifth embodiment.

[0164] In this embodiment, the plurality of light-emitting elements 30 may be a single type of light-emitting element that emits light of the same color, or multiple types of light-emitting elements that emit light of different colors may be provided. For example, a set of three light-emitting elements may be provided, each of which emits red light, green light, and blue light. This allows full-color illumination or display to be achieved.

[0165] In this case, the photoresist member 1120 is made of a resist material that is sensitive to red light, green light, and blue light. If there is variation in photosensitivity depending on the color of light, the size of the lenses 81 can be made uniform by adjusting the amount of light emitted in the exposure step shown in FIG. 29. For example, if the photoresist member 1120 is sensitive to blue light but not to red light, the amount of blue light emitted is made less than the amount of red light emitted in the exposure step shown in FIG. 29. Methods for reducing the amount of light emitted include weakening the intensity of the light and shortening the light emission time.

[0166] Seventh Embodiment This embodiment differs from the sixth embodiment in that it includes two types of lenses. Fig. 32 is a schematic cross-sectional view illustrating a light-emitting module according to the seventh embodiment. Figs. 33A and 33B are schematic cross-sectional views illustrating the operation of the light-emitting module according to the seventh embodiment. In Figs. 32, 33A, and 33B, the light distribution characteristics of light after passing through the lens are indicated by two-dot chain lines.

[0167] 32, a light-emitting module 103 according to this embodiment is arranged with a plurality of light-emitting units, each of which includes a light-emitting element 30R that emits red light, a light-emitting element 30G that emits green light, and a light-emitting element 30B that emits blue light. The number of light-emitting elements constituting each light-emitting unit is not limited to three, but may be two or four or more. Furthermore, the combination of light colors is not limited to red, green, and blue.

[0168] The light-emitting module 103 is provided with two types of lenses 82 and 83. The lens 82 is thinner than the lens 83, and the focal length of the lens 82 is longer than the focal length of the lens 83. One lens 82 is disposed over some of the light-emitting elements 30R, and one lens 83 is disposed over the remaining light-emitting elements 30R. The same applies to the light-emitting elements 30G and 30B. The light distribution characteristics of the light that has passed through the lens 82 are wider than the light distribution characteristics of the light that has passed through the lens 83.

[0169] 29, lenses 82 and 83 are formed differently by varying the light emission intensity of the light-emitting elements. When forming lens 82, the light-emitting element located directly below it is turned on at a first light emission intensity, and when forming lens 83, the light-emitting element located directly below it is turned on at a second light emission intensity that is greater than the first light emission intensity. Furthermore, as described above, if the photosensitivity of the photoresist material varies depending on the color of light, the size and shape of lens 82 can be made uniform by adjusting the first light emission intensity according to the color of light, and the size and shape of lens 83 can be made uniform by adjusting the second light emission intensity according to the color of light.

[0170] The light-emitting module 103 according to this embodiment may be combined with a liquid crystal module to form an image display device as shown in Fig. 9, or may form an image display device in which the light-emitting elements themselves serve as pixels as shown in Fig. 23. These image display devices may be, for example, displays for notebook personal computers, stationary displays, or in-vehicle displays, which will be described later in the tenth embodiment.

[0171] Next, a description will be given of the operation of the light emitting module 103 according to this embodiment. The light emitting module 103 can achieve a narrow viewing mode, a wide viewing mode, and a full lighting mode.

[0172] 33A , in the narrow field of view mode, light-emitting elements 30R, 30G, and 30B arranged directly below lens 83 are turned on, and light-emitting elements 30R, 30G, and 30B arranged directly below lens 82 are turned off. This narrows the light distribution characteristics of each light-emitting element. As a result, the angle at which an image can be viewed narrows in an image display device including light-emitting module 103. For example, the narrow field of view mode is preferable when privacy is important in a notebook personal computer or when information only needs to be provided to the driver in an in-vehicle display.

[0173] 33B , in the wide-field mode, light-emitting elements 30R, 30G, and 30B arranged directly below lens 82 are turned on, and light-emitting elements 30R, 30G, and 30B arranged directly below lens 83 are turned off. This widens the light distribution characteristics of each light-emitting element. As a result, the angle at which an image can be viewed is widened in an image display device including light-emitting module 103. For example, the wide-field mode is preferable when multiple people view the same screen on a notebook personal computer, or when information is provided to not only the driver but also the passenger in the front seat on an in-vehicle display.

[0174] 32, in the full lighting mode, light-emitting elements 30R, 30G, and 30B arranged both directly below lens 82 and directly below lens 83 are turned on. This increases the light intensity of light from light-emitting module 103, and can brighten images in an image display device including light-emitting module 103. For example, the full lighting mode is preferable when the image display device is used in a location exposed to direct sunlight, or when the surroundings are too bright and it is difficult to see the image. Other configurations, manufacturing methods, operations, and effects of this embodiment are the same as those of the sixth embodiment.

[0175] Eighth Embodiment This embodiment differs from the seventh embodiment in that lenses are disposed only directly above some of the light-emitting elements. Fig. 34 is a schematic cross-sectional view illustrating a light-emitting module according to the eighth embodiment.

[0176] 34 , the light-emitting module 104 according to this embodiment differs from the light-emitting module 103 according to the seventh embodiment in that it is not provided with a lens 82. That is, no lens is provided directly above some of the light-emitting elements, and light emitted from the light-emitting elements is emitted from the light-emitting module 104 directly or after being reflected by the light-blocking member 50. The light distribution characteristics of the light that is emitted without passing through the lens are wider than the light distribution characteristics of the light that is emitted after passing through the lens 83.

[0177] This embodiment can also realize the narrow-view mode, wide-view mode, and full-light mode, as in the seventh embodiment. The configuration, manufacturing method, operation, and effects of this embodiment other than those described above are the same as those of the seventh embodiment.

[0178] Ninth Embodiment This embodiment is an example in which, when the thicknesses of light-emitting elements are different, the thickness of the lens is made different to make the light distribution characteristics closer to uniform. Fig. 35 is a schematic cross-sectional view illustrating a light-emitting module according to the ninth embodiment. Fig. 36 is a schematic cross-sectional view illustrating a light-emitting module according to a reference example.

[0179] 35 , in the light-emitting module 105 according to this embodiment, the thickness of the light-emitting element 30R that emits red light is greater than the thickness of the light-emitting element 30G that emits green light and the thickness of the light-emitting element 30B that emits blue light. In one example, the thickness of the light-emitting element 30R is 150 μm, and the thickness of the light-emitting element 30G and the thickness of the light-emitting element 30B are each 120 μm.

[0180] Furthermore, in the light-emitting module 105, a lens 84 is disposed directly above the light-emitting element 30R, and lenses 85 are disposed directly above the light-emitting element 30G and the light-emitting element 30B. The red light emitted from the light-emitting element 30R is incident on the lens 84. The green light emitted from the light-emitting element 30G is incident on the lens 85 disposed directly above the light-emitting element 30G. The blue light emitted from the light-emitting element 30B is incident on the lens 85 disposed directly above the light-emitting element 30B. The lens 84 is thinner than the lens 85, and the focal length of the lens 84 is longer than the focal length of the lens 85.

[0181] In each light-emitting element, an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer are stacked in this order from the bottom, i.e., from the substrate 10 side, with the p-type semiconductor layer being thicker than the n-type semiconductor layer and the light-emitting layer. Therefore, the light-emitting layer is located in the portion of the light-emitting element that is closer to the substrate 10. Therefore, the distance from the light-emitting layer of light-emitting element 30R to the top surface of light-emitting element 30R is longer than the distance from the light-emitting layer of light-emitting element 30G to the top surface of light-emitting element 30G and the distance from the light-emitting layer of light-emitting element 30B to the top surface of light-emitting element 30B.

[0182] As shown in FIG. 36 , in the light-emitting module 106 according to the reference example, the same lens 85 is disposed over all light-emitting elements. In this case, the optical path length from the light-emitting layer of light-emitting element 30R to the lens surface of lens 85 is longer than the optical path length from the light-emitting layer of light-emitting element 30G to the lens surface of lens 85 and the optical path length from the light-emitting layer of light-emitting element 30B to the lens surface of lens 85. The longer the optical path length to the lens surface, the more the luminous flux is narrowed, and the higher the light concentration. Therefore, the light distribution characteristics of light emitted from light-emitting element 30R and transmitted through lens 85 are narrower than the light distribution characteristics of light emitted from light-emitting element 30G or 30B and transmitted through lens 85. As a result, color shift occurs, in which the color of light varies depending on the viewing angle.

[0183] 35, in this embodiment, the focal length of lens 84 arranged directly above light-emitting element 30R is made longer than the focal length of lens 85 arranged directly above light-emitting elements 30G and 30B. As a result, the light distribution characteristics of light emitted from light-emitting element 30R and transmitted through lens 84 become approximately the same as the light distribution characteristics of light emitted from light-emitting element 30G or 30B and transmitted through lens 85. As a result, the light distribution characteristics between the light-emitting elements can be made closer to uniform, and color shift due to viewing angle can be reduced. Other than the above, the configuration, manufacturing method, operation, and effects of this embodiment are the same as those of the sixth embodiment.

[0184] Tenth Embodiment Fig. 37 is a schematic top view illustrating an image display device according to a tenth embodiment. Fig. 37 shows an image display device 500 as well as the interior of a vehicle 510 in which the image display device 500 is installed.

[0185] 37 , image display device 500 is installed approximately in the center of dashboard 501 arranged in vehicle 510. A windshield 503 is arranged in front of dashboard 501, and a driver's seat and a steering wheel 502 are arranged on the right side of dashboard 501. A passenger seat is arranged on the left side of dashboard 501. Image display device 500 is installed approximately in the center of dashboard 501 between the driver's seat and passenger seat, and is located in a position where it can be viewed by both the driver and passengers at the passenger seat.

[0186] The image display device 500 may be, for example, the image display device 1 having the light-emitting module 100 and the liquid crystal module 2 shown in Fig. 9. Alternatively, the image display device 500 may be the image display device 300 shown in Fig. 23 or the image display device 400 shown in Fig. 25.

[0187] The light-emitting modules according to the first, second, and fifth to ninth embodiments and the image display devices according to the third and fourth embodiments described above can be used not only as the in-vehicle image display device shown in FIG. 37, but also as various monitors for information processing devices, various industrial and medical applications, monitors for head-mounted displays for game devices, etc.

[0188] According to the above-described embodiment, it is possible to realize a method for manufacturing a light emitting module, a method for manufacturing an image display device, and a light emitting module with improved accuracy in forming a light blocking member.

[0189] (Test Example) In this test example, the manufacturing method of the light-emitting module according to the first embodiment described above was carried out, and the first portion 1112 of the photoresist member 1110, which is the intermediate structure, was observed using a scanning electron microscope (SEM).

[0190] Figure 38 is an SEM photograph showing a first portion of the photoresist member produced in this test example. The photographed area of ​​Figure 38 corresponds to the perspective view shown in Figure 6. As shown in Figure 38, the first portion 1112 produced in this test example had a roughly rectangular parallelepiped shape with rounded vertices and sides.

[0191] Although several embodiments of the present invention have been described above, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be embodied in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included within the scope and spirit of the invention, as well as within the scope of the invention and its equivalents as set forth in the claims. Furthermore, the above-described embodiments can be implemented in combination with each other.

[0192] The embodiments include the following aspects.

[0193] (Supplementary Note 1) A method for manufacturing a light-emitting module, comprising: a step of preparing a first intermediate member including: a support member having a first surface and a second surface located opposite the first surface; a wiring layer having at least a portion thereof provided on the first surface; a plurality of light-emitting elements arranged on the side of the first surface, having a light extraction surface that radiates light toward the first surface, and electrically connected to the wiring layer; and a first photoresist member that integrally covers the plurality of light-emitting elements; and a step of supplying current via the wiring layer to light up the plurality of light-emitting elements, and forming a second intermediate member in which a plurality of first portions of the first photoresist member that correspond to the arrangement of the plurality of light-emitting elements are exposed to light.

[0194] (Appendix 2) The method for manufacturing a light-emitting module described in Appendix 1, further comprising: a step of removing other portions of the first photoresist member while leaving the plurality of first portions of the second intermediate member; a step of placing a light-shielding member in the area where the other portions of the first photoresist member have been removed; and a step of removing the plurality of first portions.

[0195] (Supplementary Note 3) The method for manufacturing a light-emitting module according to Supplementary Note 2, further comprising the step of arranging a light-transmitting member on the plurality of light-emitting elements after the step of removing the plurality of first portions.

[0196] (Supplementary Note 4) The method for manufacturing a light emitting module according to Supplementary Note 3, further comprising the step of arranging a wavelength conversion member on the light-transmitting member.

[0197] (Appendix 5) A method for manufacturing an optical emitting module as described in Appendix 2, further comprising the step of placing a wavelength conversion member on the light-shielding member after the step of removing the plurality of first portions, the wavelength conversion member being positioned so as to have a space between the wavelength conversion member and the plurality of light-emitting elements.

[0198] (Appendix 6) A method for manufacturing a light-emitting module according to Appendix 2, further comprising the steps of: after the step of removing the plurality of first portions, placing a negative second photoresist material on the plurality of light-emitting elements and on the light-shielding material; supplying current via the wiring layer to light up the plurality of light-emitting elements and expose the plurality of second portions of the second photoresist material according to the arrangement of the plurality of light-emitting elements; and removing the remaining portion of the second photoresist material, leaving the plurality of second portions.

[0199] (Supplementary Note 7) The method for manufacturing a light-emitting module according to Supplementary Note 6, wherein in the exposing step, a part of the light-emitting elements are lit with a first light-emitting amount.

[0200] (Supplementary Note 8) The method for manufacturing a light-emitting module according to Supplementary Note 7, wherein in the exposing step, another part of the light-emitting elements are lit with a second light-emitting amount that is greater than the first light-emitting amount.

[0201] (Supplementary Note 9) The method for manufacturing a light-emitting module according to Supplementary Note 6, wherein in the exposing step, other part of the light-emitting elements are not lit.

[0202] (Appendix 10) The method for manufacturing a light-emitting module described in any one of Appendices 6 to 9, wherein the plurality of light-emitting elements include a first light-emitting element that emits light of a first color and a second light-emitting element that emits light of a second color different from the first color and has a thickness greater than that of the first light-emitting element, and the thickness of the second portion of the plurality of second portions onto which the light of the first color is incident is made thicker than the thickness of the second portion onto which the light of the second color is incident.

[0203] (Appendix 11) The method for manufacturing a light-emitting module described in Appendix 1 further comprises: a step of removing other portions of the first photoresist member while leaving the plurality of first portions of the second intermediate member; and the first photoresist member being negative type.

[0204] (Supplementary Note 12) The method for manufacturing a light-emitting module according to Supplementary Note 1, further comprising the step of: removing the first portions of the second intermediate member; and the first photoresist member being a positive type.

[0205] (Supplementary Note 13) The method for manufacturing a light-emitting module according to Supplementary Note 12, wherein the first photoresist member includes at least one of a light scattering member and a light absorbing member.

[0206] (Appendix 14) A method for manufacturing a light-emitting module described in any one of Appendices 2 to 13, wherein the first photoresist member is a chemically amplified type, and the process of forming the second intermediate member includes a process of heat-treating the second intermediate member after exposing the plurality of first portions.

[0207] (Supplementary Note 15) The method for manufacturing a light-emitting module according to any one of Supplementary Notes 1 to 14, wherein, in a plan view, the outer peripheral shape of the plurality of first portions is any one of a circle, an ellipse, and a polygon with rounded corners.

[0208] (Supplementary Note 16) A method for manufacturing an image display device, comprising the step of combining a light-emitting module manufactured by the method for manufacturing a light-emitting module according to any one of Supplementary Notes 1 to 15 with a liquid crystal module.

[0209] (Appendix 17) A light-emitting module comprising: a substrate including a support member having an upper surface and a wiring layer; a plurality of light-emitting elements each arranged on the side of the upper surface, each having a light extraction surface that radiates light above the substrate, and electrically connected to the wiring layer; and a light-shielding member containing a photosensitive agent and arranged around each of the plurality of light-emitting elements when viewed from above, wherein the light-emitting module has recesses that open upward at positions corresponding to the plurality of light-emitting elements, and the recesses are recesses that include the light extraction surface as a bottom surface and include the side surfaces of the light-shielding member as wall surfaces.

[0210] (Supplementary Note 18) The light emitting module according to Supplementary Note 17, further comprising a plurality of lenses respectively disposed on the plurality of light emitting elements, the lower portions of which are located within the recess.

[0211] (Supplementary Note 19) The light-emitting module according to Supplementary Note 18, wherein the focal length of the first lens arranged directly above the first light-emitting element is longer than the focal length of the second lens arranged directly above the second light-emitting element.

[0212] (Supplementary Note 20) The light-emitting module according to Supplementary Note 19, wherein the first light-emitting element includes a light-emitting element that emits light of a first color and a light-emitting element that emits light of a second color different from the first color, and the second light-emitting element includes a light-emitting element that emits light of the first color and a light-emitting element that emits light of the second color.

[0213] (Appendix 21) The light-emitting module according to Appendix 19, wherein the first light-emitting element emits light of a first color, the second light-emitting element emits light of a second color different from the first color, and the thickness of the first light-emitting element is greater than the thickness of the second light-emitting element.

[0214] 1, 300, 400, 500... image display device, 10, 210, 310, 410... substrate, 12, 212, 312, 412... support member, 20, 220, 320, 420... wiring layer, 30, 30R, 30G, 30B... light-emitting element, 30S... light extraction surface, 30T... electrode formation surface, 50, 250... light-shielding member, 50E1, 50E2, 250E1, 250E2... edge portion, 50W, 250W... inner wall surface, 55, 255... recess, 60, 460... light-transmitting member, 70, 470a, 470b, 470c... wavelength conversion member, 72... base material, 74, 474a, 474b, 47 4c...wavelength conversion material, 80, 81, 82, 83, 84, 85...lenses, 100, 101, 102, 103, 104, 105, 106, 200...light emitting module, 382, ​​482...current signal drive circuit, 384, 484...row selection drive circuit, 486...drive circuit, 1100, 1100a, 1100c, 1200, 1200a, 1200b, 1200c, 1200d, 1200e...intermediate member, 1110, 1120, 1210, 1350...photoresist member, 1112, 1112a, 1212a, 1352...first portion, 1122...second portion

Claims

1. A method for manufacturing a light-emitting module, comprising: a step of preparing a first intermediate member including a support member having a first surface and a second surface located opposite the first surface, a wiring layer having at least a portion thereof provided on the first surface, a plurality of light-emitting elements arranged on the side of the first surface, the light-extraction surface emitting light to the side of the first surface and electrically connected to the wiring layer, and a first photoresist member integrally covering the plurality of light-emitting elements; and a step of supplying a current via the wiring layer to light up the plurality of light-emitting elements, and forming a second intermediate member in which a plurality of first portions of the first photoresist member corresponding to the arrangement of the plurality of light-emitting elements are exposed to light.

2. The method for manufacturing a light-emitting module as described in claim 1, further comprising the steps of: removing other portions of the first photoresist member while leaving the plurality of first portions of the second intermediate member; placing a light-shielding member in the area where the other portions of the first photoresist member have been removed; and removing the plurality of first portions, wherein the first photoresist member is negative type.

3. The method of manufacturing a light emitting module according to claim 2, further comprising the step of arranging a light-transmitting member on said plurality of light emitting elements after the step of removing said plurality of first portions.

4. The method for manufacturing a light emitting module according to claim 3, further comprising the step of arranging a wavelength conversion member on said light transmitting member.

5. A method for manufacturing an optical emitting module as described in claim 2, further comprising the step of placing a wavelength conversion member on the light shielding member after the step of removing the plurality of first portions, the wavelength conversion member being positioned so as to have a space between the wavelength conversion member and the plurality of optical emitting elements.

6. A method for manufacturing a light-emitting module as described in claim 2, further comprising the steps of: after the step of removing the plurality of first portions, arranging a negative-type second photoresist material on the plurality of light-emitting elements and on the light-shielding material; supplying a current through the wiring layer to light up the plurality of light-emitting elements and expose the plurality of second portions of the second photoresist material corresponding to the arrangement of the plurality of light-emitting elements; and removing the remaining portion of the second photoresist material leaving the plurality of second portions.

7. The method for manufacturing a light-emitting module according to claim 6, wherein in the step of exposing the light, a part of the light-emitting elements is turned on with a first light emission amount.

8. The method for manufacturing a light-emitting module according to claim 7, wherein in the step of exposing the other light-emitting elements, the other part of the light-emitting elements is turned on with a second light-emitting amount that is greater than the first light-emitting amount.

9. The method for manufacturing a light-emitting module according to claim 6, wherein the remaining part of the light-emitting elements is not lit in the light-exposing step.

10. A method for manufacturing a light-emitting module described in any one of claims 6 to 9, wherein the plurality of light-emitting elements include a first light-emitting element that emits light of a first color, and a second light-emitting element that emits light of a second color different from the first color and has a thickness greater than that of the first light-emitting element, and wherein the thickness of the second portion of the plurality of second portions onto which the light of the first color is incident is made greater than the thickness of the second portion onto which the light of the second color is incident.

11. The method for manufacturing a light-emitting module as described in claim 1, further comprising: a step of removing other portions of the first photoresist member while leaving the plurality of first portions of the second intermediate member; and wherein the first photoresist member is negative type.

12. The method for manufacturing a light emitting module according to claim 1, further comprising the step of: removing the first portions of the second intermediate member; and removing the first photoresist member from the second intermediate member.

13. The method for manufacturing a light emitting module according to claim 12, wherein the first photoresist member includes at least one of a light scattering member and a light absorbing member.

14. A method for manufacturing an optical emitting module described in any one of claims 2 to 13, wherein the first photoresist material is a chemically amplified type, and the process for forming the second intermediate material includes a process for heat-treating the second intermediate material after exposing the plurality of first portions.

15. A method for manufacturing a light-emitting module described in any one of claims 1 to 14, wherein, in a plan view, the outer peripheral shape of the plurality of first portions is any one of a circle, an ellipse, and a polygon with rounded corners.

16. A method for manufacturing an image display device, comprising a step of incorporating a light-emitting module manufactured by the method for manufacturing a light-emitting module according to any one of claims 1 to 15 into a liquid crystal module.

17. A light-emitting module comprising: a substrate including a support member having an upper surface and a wiring layer; a plurality of light-emitting elements each arranged on the side of the upper surface, each having a light extraction surface that radiates light above the substrate and electrically connected to the wiring layer; and a light-shielding member including a photosensitive agent and arranged around each of the plurality of light-emitting elements when viewed from above, wherein the light-emitting module has recesses that open upward at positions corresponding to the plurality of light-emitting elements, the recesses including the light extraction surface as a bottom surface and the side surfaces of the light-shielding member as wall surfaces.

18. The light emitting module according to claim 17, further comprising a plurality of lenses respectively disposed on said plurality of light emitting elements, the lower portions of which are located within said recess.

19. The light emitting module according to claim 18, wherein a focal length of a first lens disposed directly above a first light emitting element is longer than a focal length of a second lens disposed directly above a second light emitting element.

20. The light-emitting module described in claim 19, wherein the first light-emitting element includes a light-emitting element that emits light of a first color and a light-emitting element that emits light of a second color different from the first color, and the second light-emitting element includes a light-emitting element that emits light of the first color and a light-emitting element that emits light of the second color.

21. The light-emitting module as described in claim 19, wherein the first light-emitting element emits light of a first color, the second light-emitting element emits light of a second color different from the first color, and the thickness of the first light-emitting element is thicker than the thickness of the second light-emitting element.

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