Semiconductor processing device

Abstract

Disclosed in the present invention are a semiconductor processing device and method. The semiconductor processing device comprises a first chamber portion and a second chamber portion. The first chamber portion has a first groove channel, and the second chamber portion has a second groove channel. When the second chamber portion is located at a closed position relative to the first chamber portion and a wafer is accommodated between the second chamber portion and the first chamber portion, the first groove channel and the second groove channel are in communication with one another and jointly form an edge channel, and an edge of the wafer extends into the edge channel. The second chamber portion or the first chamber portion has a first through hole, a second through hole and a third through hole, through which through holes the edge channel communicates with the outside, and an isolation protrusion located between the first through hole and the second through hole; an extraction solution entering the edge channel via the first through hole flows from the first through hole to the third through hole and flows out from the third through hole, and an extraction solution entering the edge channel via the second through hole flows from the second through hole to the third through hole and flows out from the third through hole. In this way, contamination extraction at the edge of the wafer can be realized.

Description

semiconductor processing equipment

Technical field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a semiconductor processing system and a semiconductor processing method thereof. [Background Technology]

[0002] As semiconductor size continues to decrease, impurities contained in the silicon wafer material itself have become a requirement that needs to be detected and monitored in quality control. However, current wafer contamination detection technology is limited to extracting and detecting impurity contamination on the wafer surface or performing destructive testing on the entire wafer material.

[0003] Chinese patent application number 201510836143.0 discloses a method for wafer contamination extraction and detection using a closed channel within a microchamber. The closed channel is only capable of extracting and detecting contamination on the wafer surface and bulk metal. However, in some applications, it is necessary to perform contamination extraction and detection on the wafer edge alone.

[0004] Chinese patent application number 201811040519.7 discloses a method and apparatus for processing the outer edge of a semiconductor wafer using an edge micro-processing space. However, in some applications, it is impossible or difficult to extract and detect ultra-trace impurity contamination at the edge of the wafer.

[0005] Therefore, it is necessary to propose a new solution to overcome the problems in the prior art.

[0006] It should be noted that the above introduction to the technical background is merely intended to provide a clear and complete description of the technical solutions of this application and facilitate understanding by those skilled in the art. Simply because these solutions are described in the background technology section of this application, it should not be assumed that the above technical solutions are well known to those skilled in the art. [Summary of the invention]

[0007] An object of the present invention is to provide a semiconductor processing device and a semiconductor processing method thereof, which can extract and detect contamination impurities at the edge of a wafer with high precision and convenience.

[0008] To achieve the above-mentioned objectives, the present invention provides a semiconductor processing device, comprising: a first chamber portion; and a second chamber portion that can move between an open position and a closed position relative to the first chamber portion. When the second chamber portion is in the closed position relative to the first chamber portion, a wafer can be accommodated between the first chamber portion and the second chamber portion, and when the second chamber portion is in the open position relative to the first chamber portion, the wafer can be taken out or put in. The first chamber portion has a first groove channel formed on its inner wall surface, and the second chamber portion has a second groove channel formed on its inner wall surface. When the second chamber portion is in the closed position relative to the first chamber portion and the wafer is accommodated between the second chamber portion and the first chamber portion, the first groove channel and the second groove channel are connected and together form an edge channel, and the edge of the wafer extends into the edge channel. The second chamber portion or the first chamber portion has a first through hole, a second through hole and a third through hole connecting the edge channel with the outside, and an isolation protrusion located between the first through hole and the second through hole. The first through hole and the second through hole are arranged adjacent to each other. The extraction liquid entering the edge channel through the first through hole flows from the first through hole to the third through hole and flows out from the third through hole. The extraction liquid entering the edge channel through the second through hole flows from the second through hole to the third through hole and flows out from the third through hole.

[0009] According to another aspect of the present invention, the present invention provides a semiconductor processing method based on the above-mentioned semiconductor processing device, which includes: driving the first-stage extraction liquid into the first-stage edge channel through the first through hole, driving the second-stage extraction liquid into the second-stage edge channel through the second through hole, and due to the tension, the first-stage extraction liquid and the second-stage extraction liquid can both fill the corresponding positions of the edge channel where they are located; when the second-stage extraction liquid is located in the second-stage edge channel, a driving gas is introduced into the first-stage edge channel through the first through hole to drive the first-stage extraction liquid to the third through hole and recover the first-stage extraction liquid through the third through hole, and then driving the third-stage liquid into the first-stage edge channel through the first through hole, and due to the tension, the third-stage liquid can fill the corresponding positions where it is located The first segment of the extraction liquid is located in the first segment of the edge channel, and then the driving gas is introduced into the second segment of the edge channel through the second through hole to drive the second segment of the extraction liquid to the third through hole and recover the second segment of the extraction liquid through the third through hole; or, when the first segment of the extraction liquid is located in the first segment of the edge channel, the driving gas is introduced into the second segment of the edge channel through the second through hole to drive the second segment of the extraction liquid to the third through hole and recover the second segment of the extraction liquid through the third through hole, and then the fourth segment of the extraction liquid is driven into the second segment of the edge channel through the second through hole. Due to the tension, the fourth segment of the extraction liquid can fill the corresponding position of the edge channel where it is located, and then the driving gas is introduced into the first segment of the edge channel through the first through hole to drive the first segment of the extraction liquid to the third through hole and recover the first segment of the extraction liquid through the third through hole.

[0010] According to another aspect of the present invention, the present invention provides a semiconductor processing device, which includes: a first chamber part; a second chamber part that can move between an open position and a closed position relative to the first chamber part, wherein when the second chamber part is in the closed position relative to the first chamber part, a wafer can be accommodated between the first chamber part and the second chamber part, and when the second chamber part is in the open position relative to the first chamber part, the wafer can be taken out or put in; the first chamber part has a first section of groove channel and a second section of groove channel formed on its inner wall surface, and the second chamber part has a third section of groove channel and a fourth section of groove channel formed on its inner wall surface, when the second chamber part is in the closed position relative to the first chamber part and the wafer is accommodated between the second chamber part and the first chamber part, the first section of groove channel and the third section of groove channel are connected and together form a first section of edge channel, the second section of groove channel and the fourth section of groove channel are connected and together form a second section of edge channel, and the wafer A portion of the edge of the wafer extends into the first edge channel, and another portion of the edge of the wafer extends into the second edge channel. The second chamber portion or the first chamber portion has a first through hole and a third through hole connecting the first edge channel with the outside, and a second through hole and a fourth through hole connecting the second edge channel with the outside. One of the first and third through holes serves as the inlet of the first edge channel, and the other of the first and third through holes serves as the outlet of the first edge channel. One of the second and fourth through holes serves as the inlet of the second edge channel, and the other of the second and fourth through holes serves as the outlet of the second edge channel. The extraction liquid is driven to enter the first edge channel through the corresponding inlet, and the extraction liquid flows through the first edge channel and flows out through the corresponding outlet. The extraction liquid is driven to enter the second edge channel through the corresponding inlet, and the extraction liquid flows through the second edge channel and flows out through the corresponding outlet.

[0011] Compared with the prior art, in the present invention, the extraction liquid entering the edge channel through the first through hole flows from the first through hole to the third through hole and flows out from the third through hole, and the extraction liquid entering the edge channel through the second through hole flows from the second through hole to the third through hole and flows out from the third through hole. In this way, the contaminated impurities on the edge of the wafer can be efficiently extracted and detected.

[0012] It should be understood that this summary is provided only for the purpose of summarizing some embodiments in order to provide a basic understanding of some aspects of the present invention. Therefore, the above-mentioned embodiments are merely examples and should not be interpreted as narrowing the scope or concept of the present invention in any way. The features, aspects, and advantages of the various embodiments will become apparent upon reading the following detailed description and the accompanying drawings, which illustrate the principles of some embodiments by way of example.

Brief Description of the Drawings

[0013] The present invention will be more readily understood with reference to the accompanying drawings and the following detailed description, wherein like reference numerals correspond to like structural components, and wherein:

[0014] FIG1 is a schematic diagram of the three-dimensional structure of the first chamber portion in the first embodiment of the present invention;

[0015] FIG2 is a schematic top view of the first chamber portion in the first embodiment of the present invention;

[0016] FIG3 is a schematic diagram of the three-dimensional structure of the second chamber portion in the first embodiment of the present invention;

[0017] FIG4 is a schematic top view of the second chamber portion in the first embodiment of the present invention;

[0018] FIG5 is an enlarged view of circle A in FIG4 ;

[0019] 6 is a schematic cross-sectional view of a semiconductor processing apparatus in the first embodiment of the present invention at a position, wherein the section line of the cross-sectional view corresponds to the line EE in FIG. 4 ;

[0020] FIG7 is an enlarged view of circle B in FIG6 ;

[0021] FIG8 is an enlarged view of circle C in FIG6 ;

[0022] 9 is a schematic cross-sectional view of the semiconductor processing apparatus of the present invention at another position in the first embodiment, wherein the section line of the cross-sectional view corresponds to the line FF in FIG. 4 ;

[0023] FIG10 is an enlarged view of circle D in FIG9 ;

[0024] 11 is a schematic cross-sectional view of the semiconductor processing apparatus of the first embodiment of the present invention at another position, wherein the section line of the cross-sectional view corresponds to the GG line in FIG. 4 ;

[0025] FIG12 is an enlarged view of circle H in FIG11 ;

[0026] FIG13 is a schematic structural diagram of an edge channel and related structures of a semiconductor processing device according to the present invention;

[0027] 14-15 are schematic diagrams showing the working principles of the edge channel and related structures in FIG13 ;

[0028] FIG16 is a schematic flow chart of a semiconductor processing method according to a first embodiment of the present invention;

[0029] FIG17 is a schematic diagram of the three-dimensional structure of the first chamber portion in the second embodiment of the present invention;

[0030] FIG18 is a schematic top view of the structure of the first chamber portion shown in FIG17 ;

[0031] FIG19 is a schematic diagram of the three-dimensional structure of the second chamber portion in the second embodiment of the present invention;

[0032] FIG20 is a schematic top view of the second chamber portion in FIG19 ;

[0033] FIG21 is an enlarged view of circle L in FIG20 ;

[0034] FIG22 is an enlarged view of circle M in FIG20 ;

[0035] FIG23 is a schematic cross-sectional view of a position of the semiconductor processing apparatus in the second embodiment of the present invention, wherein the section line of the cross-sectional view corresponds to the line XX in FIG20 ;

[0036] FIG24 is an enlarged view of circle N in FIG23 ;

[0037] FIG25 is a schematic cross-sectional view of a position of the semiconductor processing apparatus in the second embodiment of the present invention, wherein the section line of the cross-sectional view corresponds to the YY line in FIG20 ;

[0038] FIG26 is an enlarged view of circle O in FIG25 ;

[0039] FIG27 is a schematic cross-sectional view of a position of the semiconductor processing apparatus according to the second embodiment of the present invention, wherein the section line of the cross-sectional view corresponds to the ZZ line in FIG20 ;

[0040] FIG28 is an enlarged view of circle P in FIG27 ;

[0041] 29-30 are schematic diagrams showing the working principles of the first and second edge channels in the semiconductor processing apparatus shown in FIG25 ;

[0042] FIG. 31 is a flow chart of a semiconductor processing method according to a second embodiment of the present invention. [Specific embodiment]

[0043] Some embodiments of the present invention will be described more fully below with reference to the accompanying drawings, some, but not all, of which are listed. Indeed, various embodiments of the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided to make this disclosure thorough and complete and will fully convey the scope of the invention to those skilled in the art. For example, unless otherwise stated, referring to something as first, second, etc. should not be construed as implying a particular order. Furthermore, something may be described as being higher than something (unless otherwise stated) when it is actually lower than something, and vice versa; similarly, something described as being on the left may be on the right, and vice versa. The same reference figure number always represents the same element.

[0044] First embodiment

[0045] The present invention provides a semiconductor processing device, which can efficiently and conveniently extract and detect contamination impurities on the edge of a wafer.

[0046] FIG6 is a schematic cross-sectional view of a semiconductor processing apparatus according to a first embodiment of the present invention. As shown in FIG6 , the semiconductor processing apparatus 100 includes a first chamber section 110 and a second chamber section 120 that is movable relative to the first chamber section 110 between an open position and a closed position. In this embodiment, the first chamber section 110 is an upper chamber section, and the second chamber section 120 is a lower chamber section. The lower chamber section is driven to move up and down so that the second chamber section 120 moves relative to the first chamber section 110 between an open position and a closed position. In another embodiment, the first chamber section 110 may be a lower chamber section, and the second chamber section 120 may be an upper chamber section. The upper chamber section is driven to move up and down so that the second chamber section 120 moves relative to the first chamber section 110 between an open position and a closed position. The movement of the second chamber section 120 and the first chamber section 110 is relative; either the second chamber section 120 or the first chamber section 110 moves. When the second chamber part 120 is located in the closed position relative to the first chamber part 110, the wafer 200 can be accommodated between the first chamber part 110 and the second chamber part 120. When the second chamber part 120 is located in the open position relative to the first chamber part 110, the wafer 200 can be taken out or put in.

[0047] FIG1 is a schematic diagram of the three-dimensional structure of a first chamber section 110 according to one embodiment of the present invention; FIG2 is a schematic diagram of the top view of the first chamber section 110 according to one embodiment of the present invention. FIG3 is a schematic diagram of the three-dimensional structure of a second chamber section 120 according to one embodiment of the present invention. FIG4 is a schematic diagram of the top view of the second chamber section 120 according to one embodiment of the present invention; FIG5 is an enlarged view of circle A in FIG4. FIG6 is a schematic diagram of a cross-sectional view of a semiconductor processing apparatus according to one embodiment of the present invention, wherein the cross-sectional line of the cross-sectional view corresponds to line EE in FIG4; FIG7 is an enlarged view of circle B in FIG6; and FIG8 is an enlarged view of circle C in FIG6. FIG9 is a schematic diagram of a cross-sectional view of another embodiment of the semiconductor processing apparatus according to one embodiment of the present invention, wherein the cross-sectional line of the cross-sectional view corresponds to line FF in FIG4; and FIG10 is an enlarged view of circle D in FIG9. FIG11 is a schematic diagram of a cross-sectional view of yet another embodiment of the semiconductor processing apparatus according to one embodiment of the present invention, wherein the cross-sectional line of the cross-sectional view corresponds to line GG in FIG4. FIG12 is an enlarged view of circle H in FIG11. Figure 13 is a schematic diagram of the structure of the edge channel and related structures of the semiconductor processing device of the present invention. Figures 14 and 15 are schematic diagrams of the working principle of the edge channel and related structures of Figure 13. Figure 16 is a schematic flow diagram of the semiconductor processing method of one embodiment of the present invention.

[0048] 1-12 , the first chamber portion 110 has a first groove channel 111 formed on its inner wall surface, and the second chamber portion 120 has a second groove channel 121 formed on its inner wall surface. As shown in FIG7 , 8 , and 10 , when the second chamber portion 120 is in the closed position relative to the first chamber portion 110 and the wafer 200 is accommodated between the second chamber portion 120 and the first chamber portion 110 , the first groove channel 111 and the second groove channel 121 communicate and together form an edge channel 130 , into which the edge 210 of the wafer 200 extends.

[0049] In one embodiment, as shown in Figures 3, 4, 5, 8, and 12, the second chamber portion 120 has a first through hole 122, a second through hole 123, and a third through hole 124 that connect the edge channel 130 to the outside, and an isolation protrusion 125 located between the first through hole 122 and the second through hole 123. The first through hole 122 and the second through hole 123 are arranged adjacent to each other. As shown in Figures 13 to 15, the extraction liquid that enters the edge channel 130 through the first through hole 122 flows from the first through hole 122 to the third through hole 124 and flows out from the third through hole 124, while the extraction liquid that enters the edge channel 130 through the second through hole 123 flows from the second through hole 123 to the third through hole 124 and flows out from the third through hole 124.

[0050] As shown in Figures 5, 8, and 13, the isolation protrusion 125 blocks the edge channel 130, forming an unclosed ring. The edge channel between the first through hole 122 and the third through hole 124 is referred to as a first section of the edge channel 131, and the edge channel between the second through hole 123 and the third through hole 124 is referred to as a second section of the edge channel 132.

[0051] In one embodiment, the first through hole 122 and the second through hole 123 are located on one side of the edge channel, and the third through hole 124 is located on the other side of the edge channel. Preferably, in FIG13 , the length of the first edge channel 131 and the length of the second edge channel 132 are equal. Of course, in other embodiments, the lengths of the first edge channel 131 and the second edge channel 132 may be unequal.

[0052] In one embodiment, the semiconductor processing apparatus 100 can be used to extract contaminants from the edge 210 of the wafer 200. FIG16 is a flow diagram of a semiconductor processing method 500 according to one embodiment of the present invention, wherein the semiconductor processing method 500 utilizes the semiconductor processing apparatus 100 to extract contaminants from the edge 210 of the wafer 200. The semiconductor processing method 500 includes the following steps.

[0053] Step 510, as shown in FIG14 , drives the first-stage extraction liquid 141 through the first through-hole 122 into the first-stage edge channel 131, and drives the second-stage extraction liquid 142 through the second through-hole 123 into the second-stage edge channel 132. Due to the tension, the first-stage extraction liquid 141 and the second-stage extraction liquid 142 are able to fill the corresponding positions of the edge channels.

[0054] Step 520. In one embodiment, as shown in FIG15 , when the second-stage extraction liquid 142 is located in the second-stage edge channel 132, a driving gas is introduced into the first-stage edge channel 131 through the first through hole 122 to drive the first-stage extraction liquid 141 to the third through hole 124 and the first-stage extraction liquid 141 is recovered through the third through hole 124. Then, the third-stage liquid (not shown) is driven through the first through hole into the first-stage edge channel 131 (located at the same position as the first-stage extraction liquid 141 in FIG12 ). Due to the tension, the third-stage liquid can fill the corresponding position of the edge channel where it is located. Then, a driving gas is introduced into the second-stage edge channel 132 through the second through hole 123 to drive the second-stage extraction liquid 142 to the third through hole 124 and the second-stage extraction liquid 142 is recovered through the third through hole 124. In another alternative embodiment, when the first-stage extraction liquid 141 is located in the first-stage edge channel 131, a driving gas is introduced into the second-stage edge channel 132 through the second through hole 123 to drive the second-stage extraction liquid 142 to the third through hole 124 and recover the second-stage extraction liquid 142 through the third through hole 124, and then the fourth-stage liquid (not shown) is driven into the second-stage edge channel 132 through the second through hole 123 (located at the same position as the second-stage extraction liquid 142 in Figure 12). Due to the effect of tension, the fourth-stage liquid can fill the corresponding position of the edge channel where it is located, and then a driving gas is introduced into the first-stage edge channel 131 through the first through hole 122 to drive the first-stage extraction liquid 141 to the third through hole 124 and recover the first-stage extraction liquid 141 through the third through hole 124.

[0055] Step 530 involves performing a contaminant test on the recovered first extract, the recovered second extract, or a mixture of the recovered first and second extracts. That is, either the recovered first extract or the recovered second extract may be tested for contaminants separately, or the recovered first extract and the recovered second extract may be mixed and then tested for contaminants. The contaminants may be metal contaminants, also known as metal impurities, or other contaminants.

[0056] Step 540, in one embodiment, after the first section extraction liquid 141 and the second section extraction liquid 142 are recovered, a driving gas is introduced into the first section edge channel 131 through the first through hole 122 to drive the third section liquid to the third through hole 124 and the waste liquid is recovered through the third through hole 124. In another embodiment, a driving gas can be introduced into the second section edge channel 132 through the second through hole 123 to drive the fourth section liquid to the third through hole 124 and the waste liquid is recovered through the third through hole 124. In another embodiment, negative pressure is provided at the third through hole 124 so that the third section liquid or the fourth section liquid is recovered to the waste liquid bottle. It should be noted that the third section liquid and the fourth section liquid do not exist at the same time, but either the third section liquid or the fourth section liquid exists.

[0057] To obtain more extraction liquid, steps 510 - 520 and 540 may be repeated, so that a plurality of first-stage extraction liquids may flow sequentially through the first-stage edge channel 131 , and a plurality of second-stage extraction liquids may flow sequentially through the second-stage edge channel 132 .

[0058] Before step 510, the semiconductor processing method 500 further includes:

[0059] A hydrofluoric acid mixture gas is introduced into the first edge channel 131 and the second edge channel 132 through the first through hole 122 and the second through hole 123 respectively, and the waste gas is recovered through the third through hole 124 to corrode the edge of the wafer 200, making it easier to extract pollutants later.

[0060] When the first extraction liquid 141 is driven to flow from the first through hole 122 to the third through hole 124, the first extraction liquid 141 flows over the edge portion of the wafer 200 that extends into the first edge channel 131, thereby extracting contaminants from this edge portion of the wafer 200. When the second extraction liquid 142 is driven to flow from the second through hole 123 to the third through hole 124, the second extraction liquid 142 flows over the edge portion of the wafer 200 that extends into the second edge channel 132, thereby extracting contaminants from this edge portion of the wafer 200. Specifically, the extraction liquid can dissolve the contaminants by physically or chemically reacting with the contaminants and carry them away.

[0061] As shown in FIG14 , after driving the first-stage extraction liquid 141 through the first through-hole 122 and into the first-stage edge channel 131, the first-stage extraction liquid 141 is stopped at the first position. After driving the third-stage extraction liquid through the first through-hole 122 and into the first-stage edge channel 131, the third-stage extraction liquid is stopped at the first position, where the first through-hole 122 is located. After driving the second-stage extraction liquid 142 through the second through-hole 123 and into the second-stage edge channel 132, the second-stage extraction liquid 142 is stopped at the second position. After driving the fourth-stage extraction liquid through the second through-hole 123 and into the second-stage edge channel 132, the fourth-stage extraction liquid is stopped at the second position, where the second through-hole 123 is located.

[0062] The first extraction liquid 141 and the third liquid (if any) provide a liquid seal at the first location of the edge channel to prevent the driving gas from passing through the first location when the driving gas is introduced through the second through hole. The second extraction liquid 142 and the fourth liquid (if any) provide a liquid seal at the second location of the edge channel to prevent the driving gas from passing through the second location when the driving gas is introduced through the first through hole.

[0063] If, during the process of introducing driving gas into the first edge channel 131 through the first through hole 122 to drive the first extraction liquid 141 to the third through hole 124, no second extraction liquid 142 is located within the second edge channel 132, then due to the lack of the sealing effect of the second extraction liquid 142, some driving gas will pass through the gap between the isolation protrusion 125 and the first chamber portion 110 and enter the second edge channel 132. As a result, the forward speed of the first extraction liquid 141 cannot be precisely controlled, and may even prevent the first extraction liquid 141 from advancing to the third through hole 124. If the first through hole 122 and the second through hole 123 are combined into one through hole, that is, the edge channel 130 forms a complete ring, it will be impossible to precisely control the flow of a section of extraction liquid along the edge channel 130.

[0064] In one embodiment, the volumes of the first extract, the second extract, the third liquid, and the fourth liquid are all less than 3 ml. For example, the first extract and the second extract can be 0.5 mL, so that the total volume of the first extract and the second extract is 1 mL, which is convenient for subsequent detection and calculation. The volume of the first extract and the volume of the second extract are equal, and the first edge channel 131 and the second edge channel 132 are provided so that the first extract and the second extract can be mixed to calculate the contaminants on the edge 210 of the wafer 200. In the present invention, the volume of each extract is very small, which can increase the concentration of the contaminants and thus improve the detection limit.

[0065] In the present invention, the edge channel 130 is a closed channel, so that the extraction liquid entering the edge channel 130 through the first through hole 122 can only flow along the edge channel 130 from the first through hole 122 to the third through hole 124, and the extraction liquid entering the edge channel 130 through the second through hole 123 can only flow along the edge channel from the second through hole 123 to the third through hole 124. The flow rate of the extraction liquid in the edge channel 130 is less than 5 ml / min, for example, 3 ml / min. In the present invention, the first section of the extraction liquid 141 and the second section of the extraction liquid 142 can be controlled to move at a uniform and slow speed along the edge channel 130, so that the extraction liquid has sufficient time to react with the contaminants on the edge of the wafer.

[0066] As shown in Figures 1, 2, 7, and 8, the first chamber portion 110 has a fourth through hole 112 opposite to the third through hole 124, and a fifth through hole 113 opposite to the isolation protrusion 125. After the extraction liquid enters the third through hole 124, a driving gas is introduced from the fourth through hole 112 to allow the extraction liquid to leave the edge channel 130 more quickly. When extracting contaminants from the edge 210 of the wafer 200, gas is introduced inward through the fifth through hole 113 to maintain a certain air pressure to prevent the driving gas entering through the first through hole 122 from entering the second edge channel 132 through the isolation protrusion 125, and the driving gas entering through the second through hole 123 from entering the first edge channel 131 through the isolation protrusion 125.

[0067] As shown in Figures 7 and 13, the third through hole 124 includes a groove joint portion 1241 connected to the edge channel 130 and a through hole tube portion 1242 connected to the groove joint portion. The groove joint portion 1241 serves as the funnel mouth of the through hole tube portion 1242, which can make the extraction liquid easier to collect and the flowing extraction liquid will not cross the third through hole 124.

[0068] Second embodiment

[0069] FIG23 is a schematic cross-sectional view of a second embodiment of a semiconductor processing apparatus according to the present invention. As shown in FIG23 , semiconductor processing apparatus 300 includes a first chamber portion 310 and a second chamber portion 320 movable relative to first chamber portion 310 between an open position and a closed position. For further details regarding semiconductor processing apparatus 300, reference can be made to the description of semiconductor processing apparatus 100 , and the common features will not be repeated.

[0070] Figure 17 is a schematic diagram of the three-dimensional structure of the first chamber portion of the present invention in the second embodiment. Figure 18 is a schematic diagram of the top view of the first chamber portion of the present invention in the second embodiment. Figure 19 is a schematic diagram of the three-dimensional structure of the second chamber portion of the present invention in the second embodiment. Figure 20 is a schematic diagram of the top view of the second chamber portion of the present invention in the second embodiment. Figure 21 is an enlarged view of circle L in Figure 20. Figure 22 is an enlarged view of circle M in Figure 20. FIG23 is a schematic cross-sectional view of a semiconductor processing apparatus according to the present invention at a position in the second embodiment, wherein the section line of the cross-sectional view corresponds to line XX in FIG20 ; FIG24 is an enlarged view of circle N in FIG23 ; FIG25 is a schematic cross-sectional view of a semiconductor processing apparatus according to the present invention at a position in the second embodiment, wherein the section line of the cross-sectional view corresponds to line YY in FIG20 ; FIG26 is an enlarged view of circle O in FIG25 ; FIG27 is a schematic cross-sectional view of a semiconductor processing apparatus according to the present invention at a position in the second embodiment, wherein the section line of the cross-sectional view corresponds to line ZZ in FIG20 ; FIG28 is an enlarged view of circle P in FIG27 ; FIG29-FIG30 are schematic views illustrating the working principles of the first and second edge channels of the semiconductor processing apparatus shown in FIG25 ;

[0071] 17-30 , the first chamber portion 310 has a first groove channel 311 and a second groove channel 315 formed on its inner wall surface, and an annular rib 314 located outside the first and second groove channels 311 and 315. The second chamber portion 320 has a third groove channel 321 and a fourth groove channel 328 formed on its inner wall surface, a wafer positioning portion 329 formed between the third and fourth groove channels 321 and 328, and an annular groove 341 located outside the third and fourth groove channels 321 and 328. As shown in Figures 23-28, when the second chamber portion 320 is in the closed position relative to the first chamber portion 310 and the wafer 200 is accommodated between the second chamber portion 320 and the first chamber portion 310, the annular rib 314 and the annular groove 341 cooperate with each other, the wafer positioning portion 329 positions the wafer 200, the first section groove channel 311 and the third section groove channel 321 communicate and together form a first section edge channel 331, and the second section groove channel 315 and the fourth section groove channel 328 communicate and together form a second section edge channel 332. A portion of the edge of the wafer 200 extends into the first section edge channel 331, and another portion of the edge of the wafer 200 extends into the second section edge channel 332. The wafer positioning portion 329 does not affect the flow of fluid through the first section edge channel 331 and the second section edge channel 332.

[0072] In the second embodiment, the second chamber portion 320 has a first through-hole 322 and a third through-hole 324 connecting the first edge channel 331 to the outside, a second through-hole 323 and a fourth through-hole 326 connecting the second edge channel 332 to the outside, a first isolation protrusion 325 located between the first and second through-holes 322 and 323, and a second isolation protrusion 327 located between the third and fourth through-holes 324 and 326. The first and second through-holes 322 and 323 are adjacent to each other, while the third and fourth through-holes 324 and 326 are adjacent to each other. The first isolation protrusion 325 and the second isolation protrusion 327 prevent the first and second edge channels 331 and 332 from forming a closed ring.

[0073] In one embodiment, one of the first through hole 322 and the third through hole 324 serves as the entrance of the first section edge channel 331, the other through hole of the first through hole 322 and the third through hole 324 serves as the exit of the first section edge channel 331, one of the second through hole 323 and the fourth through hole 326 serves as the entrance of the second section edge channel 332, and the other through hole of the second through hole 323 and the fourth through hole 326 serves as the exit of the second section edge channel.

[0074] As shown in Figures 29-30, the extraction liquid is driven through the corresponding inlet to enter the first edge channel 331, the extraction liquid flows through the first edge channel 331 and flows out through the corresponding outlet. The extraction liquid is driven through the corresponding inlet to enter the second edge channel 332, the extraction liquid flows through the second edge channel 332 and flows out through the corresponding outlet. In the preferred embodiment shown in Figures 29-30, the first through hole 322 serves as the inlet of the first edge channel 331, the third through hole 324 serves as the outlet of the first edge channel 331, the fourth through hole 326 serves as the inlet of the second edge channel 332, and the second through hole 323 serves as the outlet of the second edge channel 332. In other embodiments, the third through hole 324 may serve as the inlet of the first edge channel 331, and the second through hole 323 may serve as the inlet of the second edge channel 332.

[0075] Preferably, the through hole serving as the entrance of the first section edge channel 331 is adjacent to the through hole serving as the exit of the second section edge channel 332, and the through hole serving as the exit of the first section edge channel 331 is adjacent to the through hole serving as the entrance of the second section edge channel 332. In this way, the flow direction of the extract in the first section edge channel 331 and the flow direction of the extract in the second section edge channel 332 can both be clockwise or counterclockwise, which can make the control of the extract more precise and easy.

[0076] Preferably, the length of the first edge channel 331 is equal to the length of the second edge channel 332. Of course, in other embodiments, the length of the first edge channel 331 and the length of the second edge channel 332 may be unequal.

[0077] In one embodiment, the semiconductor processing apparatus 300 can be used to extract contaminants from the edge of the wafer 200. FIG31 is a flow chart of a semiconductor processing method 600 according to a second embodiment of the present invention. The semiconductor processing method 600 utilizes the semiconductor processing apparatus 300 to extract contaminants from the edge of the wafer 200. The semiconductor processing method 600 includes the following steps.

[0078] Step 610, as shown in Figure 29, drives the first-segment extraction liquid 351 into the first-segment edge channel 331 through the corresponding inlet, and drives the second-segment extraction liquid 352 into the second-segment edge channel 332 through the corresponding inlet. Due to the tension, the first-segment extraction liquid 351 and the second-segment extraction liquid 352 can both fill the corresponding positions of the edge channels of their segments.

[0079] Step 620. In one embodiment, as shown in FIG30 , when the second-segment extraction liquid 352 is located in the second-segment edge channel 332, a driving gas is introduced into the first-segment edge channel 331 through the corresponding inlet to drive the first-segment extraction liquid 351 to the corresponding outlet and the first-segment extraction liquid 351 is recovered through the corresponding outlet. Then, the third-segment liquid is driven into the first-segment edge channel through the corresponding inlet. Due to the tension, the third-segment liquid can fill the corresponding position of the first-segment edge channel where it is located. Then, a driving gas is introduced into the second-segment edge channel 332 through the corresponding inlet to drive the second-segment extraction liquid 352 to the corresponding outlet and the second-segment extraction liquid 352 is recovered through the corresponding outlet. In another alternative embodiment, when the first-stage extraction liquid 351 is located in the first-stage edge channel 331, a driving gas is introduced into the second-stage edge channel 332 through the corresponding inlet to drive the second-stage extraction liquid 352 to the corresponding outlet and then recovered through the corresponding outlet. Subsequently, the fourth-stage extraction liquid is driven into the second-stage edge channel 332 through the corresponding inlet. Due to the tension, the fourth-stage extraction liquid is able to fill the corresponding position of the second-stage edge channel 332 where it is located. Subsequently, a driving gas is introduced into the first-stage edge channel 331 through the corresponding inlet to drive the first-stage extraction liquid 351 to the corresponding outlet and then recovered through the corresponding outlet. The driving gas may be nitrogen or other gases.

[0080] In step 630, contaminant detection is performed on the recovered first extract 351, the recovered second extract 352, or a mixture of the recovered first extract 351 and the recovered second extract 352. That is, contaminant detection can be performed on either the recovered first extract or the recovered second extract alone, or the recovered first extract and the recovered second extract can be mixed and then the mixture tested for contaminants. The contaminants can be metal contaminants, also known as metal impurities, or other contaminants.

[0081] In step 640, in one embodiment, after both the first and second extraction liquids 351 and 352 are recovered, a driving gas is introduced into the first edge channel through the corresponding inlet to drive the third liquid to the corresponding outlet, and the waste liquid is recovered through the corresponding outlet. Alternatively, a driving gas is introduced into the second edge channel through the corresponding inlet to drive the fourth liquid to the corresponding outlet, and the waste liquid is recovered through the corresponding outlet. It should be noted that the third and fourth liquids do not exist at the same time; instead, either the third or fourth liquid is present.

[0082] To obtain more extraction liquid, steps 610 - 620 and 640 may be repeated, so that a plurality of first-stage extraction liquids 351 may flow sequentially through the first-stage edge channel 331 , and a plurality of second-stage extraction liquids 352 may flow sequentially through the second-stage edge channel 332 .

[0083] Before step 610, the semiconductor processing method 600 further includes:

[0084] A hydrofluoric acid mixture is introduced into the first edge channel 331 and the second edge channel 332, and the waste gas is recovered through the corresponding outlets to etch the edge of the wafer 200, making it easier to subsequently extract contaminants. The hydrofluoric acid mixture chemically reacts with the natural oxide layer on the edge surface of the wafer.

[0085] When the first extraction liquid 351 is driven from the inlet of the first edge channel 331 to the corresponding outlet, the first extraction liquid 351 flows over the edge portion of the wafer 200 that extends into the first edge channel 331, thereby extracting contaminants from this edge portion of the wafer 200. When the second extraction liquid 352 is driven from the inlet of the second edge channel 332 to the corresponding outlet, the second extraction liquid 352 flows over the edge portion of the wafer 200 that extends into the second edge channel 332, thereby extracting contaminants from this edge portion of the wafer 200. Specifically, the extraction liquid can dissolve the contaminants by physically or chemically reacting with the contaminants and remove them.

[0086] As shown in FIG29 , after driving the first-stage extraction liquid 351 through the corresponding inlet into the first-stage edge channel 331, the first-stage extraction liquid is stopped at the first position. After driving the third-stage extraction liquid through the corresponding inlet into the first-stage edge channel 331, the third-stage extraction liquid is stopped at the first position. The first position is the position of the inlet of the first-stage edge channel 331. After driving the second-stage extraction liquid 352 through the corresponding inlet into the second-stage edge channel 332, the second-stage extraction liquid is stopped at the second position. After driving the fourth-stage extraction liquid through the corresponding inlet into the second-stage edge channel 332, the fourth-stage extraction liquid is stopped at the second position. The second position is the position of the inlet of the second-stage edge channel.

[0087] The first section extraction liquid 351 and the third section liquid (if any) provide a liquid seal at the first position of the first section edge channel to prevent gas from passing through the first position; the second section extraction liquid 352 and the fourth section liquid (if any) provide a liquid seal at the second position of the second section edge channel to prevent gas from passing through the second position.

[0088] If, during the process of introducing driving gas into the first edge channel 331 to drive the first extraction liquid 351 to the corresponding outlet, there is no second extraction liquid 352 located in the second edge channel 332, then due to the lack of the sealing effect of the second extraction liquid 352, part of the driving gas will pass through the gap between the first isolation protrusion 325 and the first chamber portion 110 and enter the second edge channel 352. In this way, the forward speed of the first extraction liquid 351 cannot be accurately controlled, and may even cause the first extraction liquid 351 to be unable to advance to the corresponding outlet or the forward speed cannot be accurately controlled.

[0089] In one embodiment, the volumes of the first extract, the second extract, the third liquid, and the fourth liquid are all less than 3 ml. For example, the first extract and the second extract can be 0.5 mL, so that the total volume of the first extract and the second extract is 1 mL, which is convenient for subsequent detection and calculation. The volume of the first extract is equal to the volume of the second extract, and the first edge channel 331 and the second edge channel 332 are provided so that the first extract and the second extract can be mixed to calculate the contaminants on the edge 210 of the wafer 200. In the present invention, the volume of each extract is very small, which can increase the concentration of contaminants, thereby increasing the detection limit and achieving high-precision detection of ultra-trace elements. Both the first extract and the second extract can be quantified to a predetermined volume by a quantitative ring, that is, the volume of the first extract and the second extract can be accurately controlled by the quantitative ring.

[0090] In the present invention, the first edge channel and the second edge channel are closed channels, so that the extraction liquid entering the first edge channel 331 can only flow along the first edge channel 331 from the inlet to the corresponding outlet, and the extraction liquid entering the second edge channel 332 can only flow along the second edge channel from the inlet to the corresponding outlet. The flow rate of the extraction liquid in each edge channel is 3 to 20 ml / min, for example, 3 ml / min and 5 ml / min. In the present invention, the first and second edge channels can be controlled to move at a uniform and slow speed along the first and second edge channels, so that the extraction liquid has sufficient time to react with the contaminants on the edge of the wafer.

[0091] As shown in Figures 23 and 24 , the inner wall surface of the first chamber portion 110 contacts the first isolation protrusion 325 and the second isolation protrusion 327, thus completely isolating the first and second edge channels. However, even in this manner, gas may still pass through the gaps between the first and second isolation protrusions 325, 327, and the inner wall surface of the first chamber portion 110. Therefore, before driving the extraction liquid through one edge channel, the other edge channel must be sealed with liquid.

[0092] In this way, contaminants on the edge of the wafer can be extracted and detected efficiently and conveniently.

[0093] The details of the present invention can be more clearly understood in conjunction with the accompanying drawings and the description of the specific embodiments of the present invention. However, the specific embodiments of the present invention described herein are for illustrative purposes only and are not to be construed as limiting the present invention in any way. Based on the teachings of the present invention, skilled artisans can conceive of any possible variations based on the present invention, all of which should be considered within the scope of the present invention. It should be noted that when an element is referred to as being "disposed on" another element, it can be directly on the other element or there can be an intermediate element. When an element is considered to be "connected to" another element, it can be directly connected to the other element or there can be an intermediate element. The terms "mounted," "connected," and "connected" should be interpreted broadly. For example, they can refer to mechanical or electrical connections, internal communication between two elements, direct connection, or indirect connection through an intermediary. Those skilled in the art will understand the specific meanings of these terms based on the specific circumstances. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and similar expressions used herein are for illustrative purposes only and do not represent the only embodiments.

[0094] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the art to which this application pertains. The terms used herein in the specification of this application are intended only to describe specific embodiments and are not intended to limit this application. The term "and / or" as used herein includes any and all combinations of one or more of the associated listed items.

[0095] Many modifications and other implementations of the present invention involve those skilled in the art who have relevant industry knowledge and some original data. Therefore, it should be understood that the present invention is not limited to the specific embodiments disclosed, but also includes other embodiments modified within the scope of the appended claims. In addition, although the foregoing description and related drawings describe the implementation of specific embodiment combinations of elements and functions, within the scope of the appended claims, elements and functions that are implemented in different combinations by substitution are also included. The appended claims also include combinations of elements and functions that are different from the elements and functions explicitly described above. Although specific terms are used herein, they are intended to be generally descriptive only and not for limiting purposes.

Claims

1. A semiconductor processing device, characterized in that: It includes: a first chamber portion; a second chamber portion movable between an open position and a closed position relative to the first chamber portion, wherein when the second chamber portion is in the closed position relative to the first chamber portion, a wafer can be accommodated between the first chamber portion and the second chamber portion, and when the second chamber portion is in the open position relative to the first chamber portion, the wafer can be taken out or put in; The first chamber portion has a first groove channel formed on its inner wall surface, and the second chamber portion has a second groove channel formed on its inner wall surface. When the second chamber portion is located at the closed position relative to the first chamber portion and the wafer is accommodated between the second chamber portion and the first chamber portion, the first groove channel and the second groove channel are connected to form an edge channel together, and the edge of the wafer extends into the edge channel. The second chamber portion or the first chamber portion comprises a first through hole, a second through hole and a third through hole connecting the edge channel with the outside, and an isolation protrusion located between the first through hole and the second through hole, the first through hole and the second through hole are arranged adjacent to each other, the extraction liquid entering the edge channel through the first through hole flows from the first through hole to the third through hole and flows out from the third through hole, and the extraction liquid entering the edge channel through the second through hole flows from the second through hole to the third through hole and flows out from the third through hole.

2. The semiconductor processing device according to claim 1, wherein: The isolation protrusion blocks the edge channel so that the edge channel forms an unclosed ring. The edge channel between the first through hole and the third through hole is called the first section edge channel, and the edge channel between the second through hole and the third through hole is called the second section edge channel.

3. The semiconductor processing device according to claim 2, characterized in that The first through hole and the second through hole are located on one side of the edge channel, and the third through hole is located on the other side of the edge channel. The length of the first edge channel is equal to the length of the second edge channel.

4. The semiconductor processing device according to claim 2, wherein: When performing contaminant extraction on the edge of the wafer, the following operations are performed: The first extraction liquid is driven to enter the first edge channel through the first through hole, and the second extraction liquid is driven to enter the second edge channel through the second through hole. Due to the tension, the first extraction liquid and the second extraction liquid can both fill the corresponding positions of the edge channel where they are located; When the second-stage extraction liquid is located in the second-stage edge channel, a driving gas is introduced into the first-stage edge channel through the first through hole to drive the first-stage extraction liquid to the third through hole and recover the first-stage extraction liquid through the third through hole, and then the third-stage liquid is driven into the first-stage edge channel through the first through hole. Due to the tension, the third-stage liquid can fill the corresponding position of the edge channel where it is located, and then the driving gas is introduced into the second-stage edge channel through the second through hole to drive the second-stage extraction liquid to the third through hole and recover the second-stage extraction liquid through the third through hole; or, when the first-stage extraction liquid is located in the first-stage edge channel, a driving gas is introduced into the second-stage edge channel through the second through hole to drive the second-stage extraction liquid to the third through hole and recover the second-stage extraction liquid through the third through hole, and then the fourth-stage liquid is driven into the second-stage edge channel through the second through hole. Due to the tension, the fourth-stage liquid can fill the corresponding position of the edge channel where it is located, and then the driving gas is introduced into the first-stage edge channel through the first through hole to drive the first-stage extraction liquid to the third through hole and recover the first-stage extraction liquid through the third through hole.

5. The semiconductor processing device according to claim 4, characterized in that: When the first extraction liquid is driven to flow from the first through hole to the third through hole, the first extraction liquid flows through the edge of the wafer extending into the first edge channel to extract the contaminants on the edge of the wafer. When the second extraction liquid is driven to flow from the second through hole to the third through hole, the second extraction liquid flows through the edge of the wafer extending into the second edge channel to extract the contaminants on the edge of the wafer. The pollutant detection is performed based on the recovered first-stage extract, or the recovered second-stage extract, or the mixed solution of the recovered first-stage extract and the second-stage extract.

6. The semiconductor processing device according to claim 4, characterized in that After driving the first extraction liquid through the first through hole into the first edge channel, the first extraction liquid is stopped at the first position; after driving the third extraction liquid through the first through hole into the first edge channel, the third extraction liquid is stopped at the first position, the first position being the position of the first through hole. After driving the second extraction liquid through the second through hole into the second edge channel, the second extraction liquid is stopped at the second position; after driving the fourth liquid through the second through hole into the second edge channel, the fourth liquid is stopped at the second position, where the second position is where the second through hole is located. The first stage of extraction liquid and the third stage of liquid provide a liquid seal at the first location of the edge channel to prevent gas from passing through the first location; The second stage extraction liquid and the fourth stage liquid provide a liquid seal at the second location of the edge channel to prevent gas from passing through the second location.

7. The semiconductor processing device according to claim 4, characterized in that: The volumes of the first extract, the second extract, the third liquid, and the fourth liquid are all less than 3 ml. The volume of the first extract is equal to the volume of the second extract. The edge channel is a closed channel, so that the extraction liquid entering the edge channel through the first through hole can only flow along the edge channel from the first through hole to the third through hole, and the extraction liquid entering the edge channel through the second through hole can only flow along the edge channel from the second through hole to the third through hole. After both the first and second extraction liquids are recovered, a driving gas is introduced into the first edge channel through the first through hole to drive the third liquid to the third through hole and the waste liquid is recovered through the third through hole, or a driving gas is introduced into the second edge channel through the second through hole to drive the fourth liquid to the third through hole and the waste liquid is recovered through the third through hole, or a negative pressure is provided at the third through hole so that the third liquid or the fourth liquid is recovered to the waste liquid bottle.

8. The semiconductor processing device according to claim 4, characterized in that Before driving the first and second extraction liquids into the edge channel, hydrofluoric acid mixed gas is introduced into the first and second edge channels through the first and second through holes respectively, and waste gas is recovered through the third through hole. The first chamber portion or the second chamber portion has a fourth through hole opposite to the third through hole, and after the extraction liquid enters the third through hole, a driving gas is introduced from the fourth through hole to make the extraction liquid leave the edge channel more quickly. The first chamber portion or the second chamber portion has a fifth through hole opposite to the isolation protrusion. When extracting contaminants from the edge of the wafer, gas is introduced into the wafer through the fifth through hole to maintain a certain gas pressure. The third through hole includes a groove joint portion communicating with the edge channel and a through hole tube portion communicating with the groove joint portion, and the groove joint portion serves as a funnel opening of the through hole tube portion.

9. A semiconductor processing method based on the semiconductor processing device according to any one of claims 1 to 8, characterized in that: It includes: The first extraction liquid is driven to enter the first edge channel through the first through hole, and the second extraction liquid is driven to enter the second edge channel through the second through hole. Due to the tension, the first extraction liquid and the second extraction liquid can both fill the corresponding positions of the edge channel where they are located; When the second-stage extraction liquid is located in the second-stage edge channel, a driving gas is introduced into the first-stage edge channel through the first through hole to drive the first-stage extraction liquid to the third through hole and recover the first-stage extraction liquid through the third through hole, and then the third-stage liquid is driven into the first-stage edge channel through the first through hole. Due to the tension, the third-stage liquid can fill the corresponding position of the edge channel where it is located, and then the driving gas is introduced into the second-stage edge channel through the second through hole to drive the second-stage extraction liquid to the third through hole and recover the second-stage extraction liquid through the third through hole; or, when the first-stage extraction liquid is located in the first-stage edge channel, a driving gas is introduced into the second-stage edge channel through the second through hole to drive the second-stage extraction liquid to the third through hole and recover the second-stage extraction liquid through the third through hole, and then the fourth-stage liquid is driven into the second-stage edge channel through the second through hole. Due to the tension, the fourth-stage liquid can fill the corresponding position of the edge channel where it is located, and then the driving gas is introduced into the first-stage edge channel through the first through hole to drive the first-stage extraction liquid to the third through hole and recover the first-stage extraction liquid through the third through hole.

10. The semiconductor processing method according to claim 9, characterized in that: It also includes: Based on the recovered first extract, or the recovered second extract, or the mixture of the recovered first extract and the second extract, the pollutant detection is performed. When the first extraction liquid is driven to flow from the first through hole to the third through hole, the first extraction liquid flows through the edge portion of the wafer extending into the first edge channel to extract the contaminants on the edge portion of the wafer; when the second extraction liquid is driven to flow from the second through hole to the third through hole, the second extraction liquid flows through the edge portion of the wafer extending into the second edge channel to extract the contaminants on the edge portion of the wafer. After the first extract and the second extract are recovered, the semiconductor processing method further comprises: A driving gas is introduced into the first segment edge channel through the first through hole to drive the third segment liquid to the third through hole and to recover the waste liquid through the third through hole, or a driving gas is introduced into the second segment edge channel through the second through hole to drive the fourth segment liquid to the third through hole and to recover the waste liquid through the third through hole, or a negative pressure is provided at the third through hole so that the third segment liquid or the fourth segment liquid is recovered to the waste liquid bottle, Before driving the first-stage extraction liquid and the second-stage extraction liquid into the edge channel, the semiconductor processing method further includes: The hydrofluoric acid mixed gas is introduced into the first section edge channel and the second section edge channel through the first through hole and the second through hole respectively, and the waste gas is recovered through the third through hole.

11. A semiconductor processing device, characterized in that: It includes: a first chamber portion; a second chamber portion movable between an open position and a closed position relative to the first chamber portion, wherein when the second chamber portion is in the closed position relative to the first chamber portion, a wafer can be accommodated between the first chamber portion and the second chamber portion, and when the second chamber portion is in the open position relative to the first chamber portion, the wafer can be taken out or put in; The first chamber portion has a first section of groove channel and a second section of groove channel formed on its inner wall surface, and the second chamber portion has a third section of groove channel and a fourth section of groove channel formed on its inner wall surface. When the second chamber portion is located at the closed position relative to the first chamber portion and the wafer is accommodated between the second chamber portion and the first chamber portion, the first section of groove channel and the third section of groove channel are connected and jointly form a first section of edge channel, the second section of groove channel and the fourth section of groove channel are connected and jointly form a second section of edge channel, a portion of the edge of the wafer extends into the first section of edge channel, and another portion of the edge of the wafer extends into the second section of edge channel, The second chamber portion or the first chamber portion has a first through hole and a third through hole connecting the first section edge channel with the outside, and a second through hole and a fourth through hole connecting the second section edge channel with the outside, one of the first through hole and the third through hole serves as an entrance to the first section edge channel, the other of the first through hole and the third through hole serves as an exit to the first section edge channel, one of the second through hole and the fourth through hole serves as an entrance to the second section edge channel, and the other of the second through hole and the fourth through hole serves as an exit to the second section edge channel, The extraction liquid is driven to enter the first edge channel through the corresponding inlet, and the extraction liquid flows through the first edge channel and flows out through the corresponding outlet, The extraction liquid is driven to enter the second edge channel through the corresponding inlet, and the extraction liquid flows through the second edge channel and flows out through the corresponding outlet.

12. The semiconductor processing device according to claim 11, characterized in that The first through hole is adjacent to the second through hole and a first isolation protrusion is disposed between the first through hole and the second through hole, the third through hole is adjacent to the fourth through hole and a second isolation protrusion is disposed between the third through hole and the fourth through hole, The first isolation protrusion and the second isolation protrusion make the first edge channel and the second edge channel not closed into a ring shape. The through hole as the entrance of the first edge channel is adjacent to the through hole as the exit of the second edge channel. The through hole serving as the outlet of the first section edge channel is adjacent to the through hole serving as the inlet of the second section edge channel.

13. The semiconductor processing device according to claim 12, wherein: When performing contaminant extraction on the edge of the wafer, the following operations are performed: The first-stage extraction liquid is driven to enter the first-stage edge channel through the corresponding inlet, and the second-stage extraction liquid is driven to enter the second-stage edge channel through the corresponding inlet. Due to the tension, the first-stage extraction liquid and the second-stage extraction liquid can both fill the corresponding positions of the edge channels of their respective stages; When the second-stage extraction liquid is located in the second-stage edge channel, a driving gas is introduced into the first-stage edge channel through the corresponding inlet to drive the first-stage extraction liquid to the corresponding outlet and the first-stage extraction liquid is recovered through the corresponding outlet, and then the third-stage liquid is driven into the first-stage edge channel through the corresponding inlet. Due to the tension, the third-stage liquid can fill the corresponding position of the first-stage edge channel where it is located, and then a driving gas is introduced into the second-stage edge channel through the corresponding inlet to drive the second-stage extraction liquid to the corresponding outlet and the second-stage extraction liquid is recovered through the corresponding outlet; or, When the first-stage extraction liquid is located in the first-stage edge channel, a driving gas is introduced into the second-stage edge channel through the corresponding inlet to drive the second-stage extraction liquid to the corresponding outlet and recover the second-stage extraction liquid through the corresponding outlet, and then the fourth-stage liquid is driven into the second-stage edge channel through the corresponding inlet. Due to the tension, the fourth-stage liquid can fill the corresponding position of the second-stage edge channel where it is located, and then a driving gas is introduced into the first-stage edge channel through the corresponding inlet to drive the first-stage extraction liquid to the corresponding outlet and recover the first-stage extraction liquid through the corresponding outlet.

14. The semiconductor processing device according to claim 13, wherein: When the first extraction liquid is driven to flow from the inlet of the first edge channel to the corresponding outlet, the first extraction liquid flows over the edge of the wafer extending into the first edge channel to extract the contaminants on the edge of the wafer. When the second extraction liquid is driven to flow from the inlet of the second edge channel to the corresponding outlet, the second extraction liquid flows over the edge of the wafer extending into the second edge channel to extract the contaminants on the edge of the wafer. The pollutant detection is performed based on the recovered first-stage extract, or the recovered second-stage extract, or the mixed solution of the recovered first-stage extract and the second-stage extract.

15. The semiconductor processing device according to claim 13, wherein: After driving the first extraction liquid through the corresponding inlet into the first edge channel, the first extraction liquid is stopped at the first position; after driving the third extraction liquid through the corresponding inlet into the first edge channel, the third extraction liquid is stopped at the first position, the first position being the position of the inlet of the first edge channel. After driving the second extraction liquid into the second edge channel through the corresponding inlet, the second extraction liquid is stopped at the second position; after driving the fourth liquid into the second edge channel through the corresponding inlet, the fourth liquid is stopped at the second position, the second position being the position of the inlet of the second edge channel. The first extraction liquid and the third liquid provide a liquid seal at a first location of the first edge channel to prevent gas from passing through the first location; The second stage extraction liquid and the fourth stage liquid provide a liquid seal at the second location of the second stage edge channel to prevent gas from passing through the second location.

16. The semiconductor processing device according to claim 13, wherein: The volumes of the first extract, the second extract, the third liquid, and the fourth liquid are all less than 3 ml. The first extract is quantified using a quantitative loop so that the volume of the first extract is a predetermined volume. The second extract is quantified using a quantitative loop so that the volume of the second extract is a predetermined volume. The volume of the first extract is equal to the volume of the second extract. The first edge channel and the second edge channel are both closed channels, so that the extraction liquid entering the first edge channel can only flow along the first edge channel from the corresponding inlet to the corresponding outlet, and the extraction liquid entering the second edge channel can only flow along the second edge channel from the corresponding inlet to the corresponding outlet. After the first and second extraction liquids are recovered, a driving gas is introduced into the first edge channel through the corresponding inlet to drive the third liquid to the corresponding outlet and the waste liquid is recovered through the corresponding outlet, or a driving gas is introduced into the second edge channel through the corresponding inlet to drive the fourth liquid to the corresponding outlet and the waste liquid is recovered through the corresponding outlet.

17. The semiconductor processing device according to claim 13, wherein: Before driving the first extraction liquid into the first edge channel and before driving the second extraction liquid into the second edge channel, hydrofluoric acid mixed gas is introduced into the first edge channel and the second edge channel respectively.

18. The semiconductor processing device according to claim 11, wherein: The length of the first edge channel is equal to the length of the second edge channel.

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