Plasma processing apparatus and processing method

Abstract

The present invention provides a plasma processing apparatus and a processing method with which cleaning performance is improved.　This plasma processing apparatus comprises: a plasma processing chamber that forms a plasma processing space; a substrate support part that is provided in the plasma processing chamber; a gas introduction part that introduces gas into the plasma processing space; an antenna that is provided above the plasma processing chamber and to which a source RF signal for plasma generation is supplied; an electromagnet that is provided further outward than the antenna in the radial direction and has an annular coil disposed concentrically with the center axis of the substrate support part; and a control unit, wherein the control unit is configured to be capable of executing a step for generating plasma of etching gas and performing plasma etching processing on a substrate placed on the substrate support part, and a step for generating plasma of cleaning gas, generating the magnetic field of the electromagnet in the plasma processing space, and cleaning deposits generated in the step for performing the plasma etching processing.

Description

Plasma processing apparatus and processing method

[0001] The present disclosure relates to a plasma processing apparatus and processing method.

[0002] Patent Document 1 discloses a plasma processing apparatus comprising a processing vessel, a mounting table provided within the processing vessel on which an object to be processed is placed, a dielectric having a facing surface facing the mounting table, a planar antenna provided on the surface of the dielectric opposite the facing surface and introducing an induction electric field for plasma excitation into the processing vessel via the dielectric, and a group of electromagnets arranged along the outer periphery of the processing vessel and forming a magnetic field within the processing vessel that moves ions in the plasma based on the induction electric field along the facing surface of the dielectric.

[0003] JP 2018-98094 A

[0004] In one aspect, the present disclosure provides a plasma processing apparatus and method that improves cleaning performance.

[0005] In order to solve the above problem, according to one aspect, a plasma processing apparatus can be provided, comprising: a plasma processing chamber forming a plasma processing space; a substrate support provided within the plasma processing chamber; a gas inlet for introducing a gas into the plasma processing space; an antenna provided above the plasma processing chamber and supplied with a source RF signal for plasma generation; an electromagnet provided radially outward of the antenna and having an annular coil arranged concentrically with a central axis of the substrate support; and a controller, wherein the controller is configured to perform the steps of generating plasma of an etching gas and performing a plasma etching process on a substrate placed on the substrate support; and generating plasma of a cleaning gas and generating a magnetic field of the electromagnet in the plasma processing space to clean deposits formed in the plasma etching process.

[0006] According to one aspect, it is possible to provide a plasma processing apparatus and a processing method that improve cleaning performance.

[0007] An example of a diagram for explaining an example of the configuration of an inductively coupled plasma processing apparatus. A flowchart showing an example of processing using a plasma processing apparatus. An example of a graph showing the distribution of electron density. An example of a graph showing the distribution of electron density. An example of a diagram showing the amount of reduction in film thickness of a precoat film in a cleaning process. An example of a diagram showing the amount of reduction in film thickness of a precoat film in a cleaning process. Another example of a diagram for explaining an example of the configuration of an inductively coupled plasma processing apparatus.

[0008] Various exemplary embodiments will be described in detail below with reference to the drawings, in which the same or equivalent parts are designated by the same reference numerals.

[0009] [Plasma Processing System] An example of the configuration of a plasma processing system will be described below. Fig. 1 is an example of a diagram for explaining an example of the configuration of an inductively coupled plasma processing apparatus 1.

[0010] The plasma processing system includes an inductively coupled plasma processing apparatus 1 and a control unit 2. The inductively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. The plasma processing chamber 10 includes a dielectric window. The plasma processing apparatus 1 also includes a substrate support 11, a gas inlet, and an antenna 14. The substrate support 11 is disposed within the plasma processing chamber 10. The antenna 14 is disposed on or above the plasma processing chamber 10 (i.e., on or above the dielectric window 101). The plasma processing chamber 10 has a plasma processing space 10s defined by the dielectric window 101, a sidewall 102 of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 has at least one gas supply port for supplying at least one processing gas to the plasma processing space 10s and at least one gas exhaust port for exhausting gas from the plasma processing space 10s. The plasma processing chamber 10 is grounded.

[0011] The substrate support 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region 111a for supporting a substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a plan view. The substrate W is disposed on the central region 111a of the main body 111, and the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also called a substrate support surface for supporting the substrate W, and the annular region 111b is also called a ring support surface for supporting the ring assembly 112.

[0012] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 can function as a bias electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 1111b disposed within the ceramic member 1111a. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Note that the annular region 111b may also be provided by another member surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 1111 and the annular insulating member. Furthermore, at least one RF / DC electrode coupled to an RF (Radio Frequency) power supply 31 and / or a DC (Direct Current) power supply 32 (described later) may be disposed within the ceramic member 1111a. In this case, the at least one RF / DC electrode functions as a bias electrode. Note that the conductive member of the base 1110 and the at least one RF / DC electrode may function as multiple bias electrodes. Alternatively, the electrostatic electrode 1111b may function as a bias electrode. Therefore, the substrate support 11 includes at least one bias electrode.

[0013] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive or insulating material, and the cover rings are formed of an insulating material.

[0014] The substrate support 11 may also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow passage 1110a, or a combination thereof. A heat transfer fluid such as brine or a gas flows through the flow passage 1110a. In one embodiment, the flow passage 1110a is formed in the base 1110, and one or more heaters are disposed in the ceramic member 1111a of the electrostatic chuck 1111. The substrate support 11 may also include a heat transfer gas supply configured to supply a heat transfer gas to a gap between the backside of the substrate W and the central region 111a.

[0015] The gas inlet is configured to introduce at least one process gas from the gas supply unit 20 into the plasma processing space 10s. In one embodiment, the gas inlet includes a center gas injector (CGI) 13. The center gas injector 13 is disposed above the substrate support 11 and attached to a central opening formed in the dielectric window 101. The center gas injector 13 has at least one gas supply port 13a, at least one gas flow path 13b, and at least one gas inlet port 13c. The process gas supplied to the gas supply port 13a passes through the gas flow path 13b and is introduced into the plasma processing space 10s from the gas inlet port 13c. Note that the gas inlet may include one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 102 in addition to or instead of the center gas injector 13.

[0016] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from a corresponding gas source 21 to the gas inlet through a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply unit 20 may include one or more flow modulation devices to modulate or pulse the flow rate of the at least one process gas.

[0017] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one bias electrode and the antenna 14. This causes a plasma to be formed from at least one process gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of a plasma generating unit configured to generate a plasma from one or more process gases in the plasma processing chamber 10. Furthermore, by supplying a bias RF signal to the at least one bias electrode, a bias potential is generated on the substrate W, thereby attracting ions in the formed plasma to the substrate W.

[0018] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to the antenna 14 and configured to generate a source RF signal (source RF power) for plasma generation via at least one impedance matching circuit. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are supplied to the antenna 14.

[0019] The second RF generator 31b is coupled to at least one bias electrode via at least one impedance matching circuit and is configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generator 31b may be configured to generate multiple bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one bias electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0020] The power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a bias DC generator 32a. In one embodiment, the bias DC generator 32a is connected to at least one bias electrode and configured to generate a bias DC signal. The generated bias DC signal is applied to the at least one bias electrode.

[0021] In various embodiments, the bias DC signal may be pulsed. In this case, a sequence of voltage pulses is applied to at least one bias electrode. The voltage pulses may have a rectangular, trapezoidal, triangular, or combination thereof. In one embodiment, a waveform generator for generating the sequence of voltage pulses from the DC signal is connected between the bias DC generator 32a and at least one bias electrode. Thus, the bias DC generator 32a and the waveform generator constitute a voltage pulse generator. The voltage pulses may have positive or negative polarity. Furthermore, the sequence of voltage pulses may include one or more positive voltage pulses and one or more negative voltage pulses within one cycle. Note that the bias DC generator 32a may be provided in addition to the RF power supply 31 or may be provided instead of the second RF generator 31b.

[0022] The antenna 14 includes one or more coils. In one embodiment, the antenna 14 may include an outer coil and an inner coil arranged coaxially. In this case, the RF power supply 31 may be connected to both the outer coil and the inner coil, or to either the outer coil or the inner coil. In the former case, the same RF generator may be connected to both the outer coil and the inner coil, or separate RF generators may be connected to the outer coil and the inner coil separately.

[0023] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is regulated by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0024] The plasma processing apparatus 1 also includes a magnetic field generating unit 50 that generates a magnetic field in the plasma processing space 10s. The magnetic field generating unit 50 includes an electromagnet 51 and a power supply 52.

[0025] The electromagnet 51 has an annular coil that is arranged concentrically with the central axis of the substrate support 11 (an axis that passes through the center of the substrate support surface and is perpendicular to the substrate support surface). The electromagnet 51 is also arranged above the plasma processing chamber 10 (dielectric window 101). The electromagnet 51 is also arranged radially outward from the antenna 14. The electromagnet 51 is also arranged radially inward from the outer diameter of the plasma processing chamber 10.

[0026] The power supply 52 supplies power to the coil of the electromagnet 51. This causes the electromagnet 51 to generate a magnetic field within the plasma processing space 10s. The power supply 52 supplies continuous wave or pulsed power to the coil of the electromagnet 51, thereby generating a continuous wave or pulsed magnetic field within the plasma processing space 10s.

[0027] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform various processes described in this disclosure. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 may be implemented by, for example, a computer 2a. The processing unit 2a1 may be configured to read a program from the storage unit 2a2 and execute the read program to perform various control operations. This program may be stored in the storage unit 2a2 in advance or may be acquired via a medium when needed. The acquired program is stored in the storage unit 2a2 and read from the storage unit 2a2 by the processing unit 2a1 for execution. The medium may be various storage media readable by the computer 2a or a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include a random access memory (RAM), a read-only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN).

[0028] Next, an example of a process using the plasma processing apparatus 1 will be described with reference to Fig. 2. Fig. 2 is a flowchart showing an example of a process using the plasma processing apparatus 1.

[0029] In step S101, a pre-coating process is performed on the plasma processing chamber 10. Here, a pre-coating film is formed inside the plasma processing chamber 10 as a pre-processing step to prevent the inside of the plasma processing chamber 10 from being worn out in the plasma etching process (S102) described later. The pre-coating film may be, for example, SiO ２A membrane can be used.

[0030] In the pre-coating process, the control unit 2 controls the gas supply unit 20 to supply a process gas for forming a pre-coat film from the gas supply unit 20 into the plasma processing chamber 10 while the substrate W is not placed on the substrate support unit 11. As an example, SiCl ４ O as a gas and a reactive gas ２ The pre-coated film is formed by supplying a source gas (SiCl ４ gas) and reactive gas (O ２ The film may be formed by ALD (Atomic Layer Deposition) method in which source gas (SiCl ４ gas) and reactive gas (O ２ The film may be formed by, but is not limited to, a chemical vapor deposition (CVD) method in which a source RF signal is simultaneously supplied from the first RF generator 31 a to the antenna 14. The controller 2 may be configured to control the power supply 30 to supply a source RF signal from the first RF generator 31 a to the antenna 14 to generate plasma, or may not be configured to generate plasma. In this way, a precoat film is formed inside the plasma processing chamber 10.

[0031] The pre-coating process may be performed with a dummy substrate (not shown) placed on the substrate support portion 11 .

[0032] In step S102, the substrate W is subjected to plasma etching processing.

[0033] In the plasma etching process, the control unit 2 controls a transport device (not shown) to transport the substrate W into the plasma processing chamber 10 and place the substrate W on the substrate support 11. Here, the substrate W has, for example, a film to be etched and a metal-containing mask having an opening pattern formed on the film to be etched. The metal-containing mask is made of a difficult-to-etch material containing a metal such as Al, Hf, Ru, or Sn. The film to be etched may be, for example, an organic film.

[0034] The control unit 2 controls the gas supply unit 20 to supply an etching gas from the gas supply unit 20 into the plasma processing chamber 10. The etching gas for etching the organic film (film to be etched) through the metal-containing mask is Cl. ２ Gas and O ２ A mixed gas of etching gases can be used. The control unit 2 also controls the power supply 30 to supply a source RF signal from the first RF generator 31a to the antenna 14, thereby generating plasma of the etching gas. The control unit 2 may also control the power supply 30 to supply a bias RF signal from the second RF generator 31b to the bias electrode (base 1110) of the substrate support 11, or to supply a bias DC signal from the bias DC generator 32a to the bias electrode (base 1110) of the substrate support 11. This causes the etching target film to be plasma-etched via the opening pattern of the mask, and the opening pattern of the mask is transferred to the etching target film. After the plasma etching process is completed, the control unit 2 controls a transport device (not shown) to transport the substrate W out of the plasma processing chamber 10.

[0035] During the plasma etching process, etching by-products originating from the worn mask and the etched film to be etched are deposited on the inner wall surface of the plasma processing chamber 10. In other words, the etching by-products are deposited on the pre-coat film.

[0036] In step S103, a waferless cleaning process (hereinafter also referred to as a cleaning process) is performed on the plasma processing chamber 10. Here, etching by-products deposited on the inner wall surfaces, etc. of the plasma processing chamber 10 during the plasma etching process are removed to clean the plasma processing chamber 10. This prevents etching by-products peeled off from the inner wall surfaces, etc. of the plasma processing chamber 10 from falling onto the substrate W, thereby preventing defects in the semiconductor devices formed on the substrate W.

[0037] In the cleaning process, the control unit 2 controls the gas supply unit 20 to supply a cleaning gas from the gas supply unit 20 into the plasma processing chamber 10 while the substrate W is not placed on the substrate support unit 11. Here, the cleaning gas is a halogen-containing gas and O ２ A mixture of gases can be used. The halogen-containing gas can be, for example, BCl ３ A cleaning gas can be used. The control unit 2 also controls the power supply 30 to supply a source RF signal from the first RF generator 31a to the antenna 14, generating plasma of the cleaning gas. The control unit 2 also controls the power supply 52 to supply power to the coil of the electromagnet 51. This causes the electromagnet 51 to generate a magnetic field within the plasma processing chamber 10. The power supply 52 supplies continuous wave or pulsed power to the coil of the electromagnet 51, generating a continuous wave or pulsed magnetic field within the plasma processing space 10s. This allows etching by-products deposited on the inner wall surfaces, etc., of the plasma processing chamber 10 to be removed using the plasma of the cleaning gas. Furthermore, generating a magnetic field within the plasma processing chamber 10 can change the electric field distribution within the plasma processing chamber 10.

[0038] The cleaning process may be performed with a dummy substrate (not shown) placed on the substrate support portion 11 .

[0039] In step S104, the control unit 2 determines whether the repetitive process has ended. If there is a next substrate W to be etched, it is determined that the repetitive process has not ended (S104, NO), and the process by the control unit 2 returns to step S101, where the etching process (including the pre-coating process beforehand and the cleaning process afterward) is performed on the next substrate W. If there is no next substrate W to be etched, it is determined that the repetitive process has ended (S104, YES), and the process ends.

[0040] Incidentally, in the cleaning process (step S103), there are some areas in the plasma processing chamber 10 where cleaning of etching by-products is difficult. In particular, the electric field formed by the antenna 14 is weak in the upper sidewall portion of the plasma processing chamber 10, resulting in low electron density and poor cleaning performance. This makes it difficult to remove the etching by-products.

[0041] Furthermore, if the mask used in the plasma etching process contains metal, the etching by-products also contain metal, which makes it difficult to remove the etching by-products in the cleaning process (step S103).

[0042] In contrast, in the plasma processing apparatus 1 according to this embodiment, during the cleaning process, a magnetic field is generated in the plasma processing chamber 10 by the electromagnet 51. This allows etching by-products on the upper sidewall portion in the plasma processing chamber 10 to be suitably removed.

[0043] Next, a change in electron density caused by generating a magnetic field in the plasma processing chamber 10 by the electromagnet 51 will be described with reference to Figures 3 and 4. Figures 3 and 4 are examples of graphs showing the distribution of electron density.

[0044] Here, Ar gas was supplied to the plasma processing chamber 10, and Ar plasma was generated while changing the pressure in the plasma processing chamber 10 and the output of the first RF generator 31a, and the electron density inside the plasma processing chamber 10 was measured. The horizontal axis indicates the radial position of the plasma processing chamber 10, with 0 (mm) corresponding to the inner wall surface of the sidewall and increasing numbers indicating the direction toward the center of the plasma processing chamber 10. The vertical axis indicates the electron density (cm ) measured with the Langmuir probe. －３ ) is a normalized value. The measurement results of the electron density when the magnetic field of the electromagnet 51 is applied are shown by the circle and solid line graph, and the measurement results of the electron density when the magnetic field is not applied are shown by the cross and dashed line graph.

[0045] 3 shows the case where the pressure in the plasma processing chamber 10 is 1 mT, and Fig. 4 shows the case where the pressure in the plasma processing chamber 10 is 10 mT. In Fig. 3 and Fig. 4, (a) shows the case where the output of the first RF generating unit 31a is 200 W, (b) shows the case where the output of the first RF generating unit 31a is 300 W, (c) shows the case where the output of the first RF generating unit 31a is 400 W, and (d) shows the case where the output of the first RF generating unit 31a is 500 W, respectively.

[0046] By applying the magnetic field of the electromagnet 51, the magnetic flux suppresses the diffusion of electrons, increasing the electron density. As a result, the electron density increases in the region on the outer periphery of the plasma processing chamber 10, as shown in Figures 3 and 4. Furthermore, at low pressure (1 mT), the increase in electron density in the region on the outer periphery of the plasma processing chamber 10 by applying the magnetic field of the electromagnet 51 is clearly evident.

[0047] 5 and 6 are examples of diagrams showing the amount of reduction in the thickness of the precoat film during the cleaning process. In FIGS. 5 and 6, a ceiling wall surface 501 of the plasma processing chamber 10, a side wall surface 502 of the plasma processing chamber 10, and an upper surface (surface including the substrate support surface) 503 of the substrate support 11 are shown. The left edge corresponds to the central axis of the substrate support 11. Here, the electromagnet 51 generates a magnetic field of 23.36 G. The magnetic field strength is indicated by the size of the arrow, and the direction of the magnetic field is indicated by the direction of the arrow. When the electromagnet 51 generates a magnetic field, the distribution of the electric field (V / m) within the plasma processing space 10s is normalized and shown by the shade of the dotted hatching.

[0048] Here, first, a precoat film was formed on the ceiling wall surface 501 of the plasma processing chamber 10, the side wall surface 502 of the plasma processing chamber 10, etc. by a precoat process (see S101). Next, a cleaning process (see S103) was performed with and without applying a magnetic field from the electromagnet 51.

[0049] Graph 510 shows, in normalized values, the amount of reduction in the precoat film due to the cleaning process on the ceiling wall surface 501 (the direction of film thickness reduction is indicated by "-"). The case where the magnetic field of the electromagnet 51 is applied during the cleaning process (see S103) is indicated by filled-in circles and a solid line. The case where the magnetic field is not applied during the cleaning process (see S103) is indicated by open circles and a dashed line.

[0050] Graph 520 shows, in normalized values, the amount of reduction in the precoat film due to the cleaning process on the sidewall surface 502 (the direction of film thickness reduction is indicated by "-"). The case where the magnetic field of the electromagnet 51 is applied during the cleaning process (see S103) is indicated by filled circles and a solid line. The case where the magnetic field is not applied during the cleaning process (see S103) is indicated by open circles and a dashed line.

[0051] 6, graph 511 shows the difference in the amount of precoat film reduction between when the magnetic field of electromagnet 51 is applied to ceiling wall surface 501 and when the magnetic field is not applied. Graph 521 shows the difference in the amount of precoat film reduction between when the magnetic field of electromagnet 51 is applied to side wall surface 502 and when the magnetic field is not applied. In graphs 511 and 521, the greater the amount of precoat film reduction, in other words, the better the cleaning performance, the more the "+" direction. That is, in graphs 511 and 521 in FIG. 6, the hatched areas are areas where the etching rate is improved by applying the magnetic field of electromagnet 51.

[0052] 5 and 6, the etching rate of the pre-coat film is improved at the upper sidewall of the plasma processing chamber 10 where the magnetic field strength is strong. In other words, the cleaning performance of the upper sidewall portion in the plasma processing chamber 10 is improved. This allows etching by-products on the upper sidewall portion in the plasma processing chamber 10 to be suitably removed.

[0053] 7 is a diagram illustrating another example of the configuration of the inductively coupled plasma processing apparatus 1. The electromagnet 51 is located at the position shown in FIG.

[0054] 7, the electromagnet 51 may be provided radially outward from the plasma processing chamber 10. Even with this configuration, the cleaning performance of the upper sidewall portion in the plasma processing chamber 10 can be improved.

[0055] The embodiments disclosed above include, for example, the following: (Supplementary Note 1) A plasma processing apparatus comprising: a plasma processing chamber forming a plasma processing space; a substrate support provided within the plasma processing chamber; a gas inlet configured to introduce a gas into the plasma processing space; an antenna provided above the plasma processing chamber and supplied with a source RF signal for plasma generation; an electromagnet provided radially outward of the antenna and having an annular coil arranged concentrically with a central axis of the substrate support; and a controller, wherein the controller is configured to perform the steps of: generating plasma of an etching gas to perform a plasma etching process on a substrate placed on the substrate support; and generating plasma of a cleaning gas and generating a magnetic field of the electromagnet in the plasma processing space to clean deposits formed in the plasma etching process. (Supplementary Note 2) The plasma processing apparatus according to Supplementary Note 1, wherein the controller further comprises the step of forming a precoat film in the plasma processing chamber before performing the plasma etching process. (Supplementary Note 3) The plasma processing apparatus according to Supplementary Note 1 or 2, wherein the step of performing the plasma etching process performs the plasma etching process on the substrate having a film to be etched and a metal-containing mask formed on the film to be etched and having an opening pattern. (Supplementary Note 4) The plasma processing apparatus according to Supplementary Note 3, wherein the metal of the metal-containing mask contains any one of Al, Hf, and Ru, and the film to be etched is an organic film. (Supplementary Note 5) The step of forming the precoat film includes performing the plasma etching process on the substrate having a film to be etched and a metal-containing mask formed on the film to be etched and having an opening pattern. ４ Gas and O ２The plasma processing apparatus according to claim 2, wherein the step of forming the precoat film and the step of cleaning the deposit are performed in a state where the substrate is not supported by the substrate support section. The plasma processing apparatus according to claim 2, wherein the cleaning gas is a halogen-containing gas and O ２ The plasma processing apparatus according to any one of claims 1 to 6, wherein the halogen-containing gas is BCl. ３ the electromagnet is disposed radially outward from the antenna, radially inward from an outer diameter of the plasma processing chamber, and above the plasma processing chamber. (Supplementary Note 10) A processing method for a plasma processing apparatus including: a plasma processing chamber forming a plasma processing space, a substrate support provided in the plasma processing chamber, a gas inlet configured to introduce a gas into the plasma processing space, an antenna provided above the plasma processing chamber and supplied with a source RF signal for plasma generation, and an electromagnet provided radially outward from the antenna and having an annular coil disposed concentrically with a central axis of the substrate support, the processing method comprising: generating plasma of an etching gas and performing a plasma etching process on a substrate placed on the substrate support; and generating plasma of a cleaning gas and generating a magnetic field of the electromagnet in the plasma processing space to clean deposits formed in the plasma etching process.

[0056] The present invention is not limited to the configurations described in the above embodiments, but may be combined with other elements, etc. These aspects can be changed without departing from the spirit of the present invention, and can be appropriately determined depending on the application form.

[0057] This application claims priority based on Japanese Patent Application No. 2023-207864, filed on December 8, 2023, the entire contents of which are incorporated herein by reference.

[0058] REFERENCE SIGNS LIST 1 Plasma processing apparatus 2 Control unit 10 Plasma processing chamber 10s Plasma processing space 101 Dielectric window 102 Side wall 11 Substrate support 13 Central gas injection unit 14 Antenna 20 Gas supply unit 30 Power supply 31 RF power supply 31a First RF generation unit 31b Second RF generation unit 32 DC power supply 32a Bias DC generation unit 40 Exhaust system 50 Magnetic field generation unit 51 Electromagnet 52 Power supply W Substrate

Claims

1. A plasma processing apparatus comprising: a plasma processing chamber which forms a plasma processing space; a substrate support part provided within the plasma processing chamber; a gas inlet part which introduces gas into the plasma processing space; an antenna provided above the plasma processing chamber and supplied with a source RF signal for plasma generation; an electromagnet provided radially outward from the antenna and having an annular coil arranged concentrically with a central axis of the substrate support part; and a control part, wherein the control part is configured to be capable of performing the steps of: generating plasma of an etching gas and performing a plasma etching process on a substrate placed on the substrate support part; and generating plasma of a cleaning gas and generating a magnetic field of the electromagnet in the plasma processing space to clean deposits generated in the process of performing the plasma etching process.

2. The plasma processing apparatus according to claim 1, wherein the control unit further comprises a step of forming a precoat film in the plasma processing chamber before the step of performing the plasma etching process.

3. The plasma processing apparatus according to claim 1, wherein the step of performing the plasma etching process performs the plasma etching process on the substrate having a film to be etched and a metal-containing mask having an opening pattern formed on the film to be etched.

4. The plasma processing apparatus according to claim 3, wherein the metal of the metal-containing mask contains any one of Al, Hf, and Ru, and the film to be etched is an organic film.

5. The step of forming the precoat film is performed by using SiCl ４ Gas and O ２ The plasma processing apparatus according to claim 2 , wherein a gas is used.

6. The plasma processing apparatus according to claim 2, wherein the step of forming the precoat film and the step of cleaning the deposit are performed in a state where the substrate is not supported by the substrate support portion.

7. The cleaning gas is a halogen-containing gas and O ２ The plasma processing apparatus of claim 1 comprising a gas.

8. The halogen-containing gas is BCl ３ The plasma processing apparatus according to claim 7 , wherein the gas is a gas.

9. The plasma processing apparatus according to claim 1, wherein the electromagnet is disposed radially outward from the antenna, radially inward from an outer diameter of the plasma processing chamber, and above the plasma processing chamber.

10. A processing method for a plasma processing apparatus comprising: a plasma processing chamber forming a plasma processing space; a substrate support part provided within the plasma processing chamber; a gas inlet part for introducing gas into the plasma processing space; an antenna provided above the plasma processing chamber and supplied with a source RF signal for plasma generation; and an electromagnet provided radially outward of the antenna and having an annular coil arranged concentrically with a central axis of the substrate support part, the processing method comprising: a step of generating plasma of an etching gas and performing a plasma etching process on a substrate placed on the substrate support part; and a step of generating plasma of a cleaning gas and generating a magnetic field of the electromagnet in the plasma processing space to clean deposits generated in the step of performing the plasma etching process.

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