Testing device, and testing method for semiconductor cleaning apparatus

Abstract

The present disclosure relates to the technical field of semiconductors. Disclosed are a testing device, and a testing method for a semiconductor cleaning apparatus. A wafer bounce may be detected on the basis of the testing device, and the use of a mode of observation using human eyes is avoided, thereby improving the accuracy of wafer bounce detection and preventing a wafer from being scratched and damaged, and also improving an etching effect. The testing device comprises: a testing balance mechanism, an elastic assembly and a testing assembly, wherein two ends of the elastic assembly are respectively connected to the testing balance mechanism and the testing assembly; one end of the testing balance mechanism is connected to the elastic assembly, and the other end thereof is configured to support, in a process tank, a wafer to be cleaned; the testing balance mechanism is used for changing the amount of deformation of the elastic assembly on the basis of the lever principle when said wafer bounces; and the testing assembly is used for testing the amount of deformation of the elastic assembly.

Description

Testing device and testing method for semiconductor cleaning equipment Technical Field

[0001] The present disclosure relates to the field of semiconductor technology, and in particular to a testing device and a testing method for semiconductor cleaning equipment. Background Art

[0002] Cleaning is essential in the manufacturing of semiconductor wafers. The cleaning equipment used in this process includes wet etching equipment. Among these, hot phosphoric acid cleaning equipment, used to remove silicon nitride and silicon oxynitride films, is relatively complex and difficult to control. Hot phosphoric acid cleaning equipment uses a hot phosphoric acid etchant. During the hot phosphoric acid etching process, if the hot phosphoric acid etchant boils, it can cause the wafer to shake, potentially colliding with the lifter and causing scratches or breakage. Therefore, the hot phosphoric acid etchant must remain in a non-boiling state. The boiling point of the hot phosphoric acid etchant is related to the concentration of phosphoric acid. To avoid boiling, the concentration of phosphoric acid must meet certain requirements. Furthermore, to improve the etching effect, the volume fraction of phosphoric acid must be maintained within a certain range. During the etching process, as the temperature rises, the water contained in the phosphoric acid evaporates continuously, changing the volume fraction of phosphoric acid and affecting the etching rate. Therefore, it is necessary to intermittently replenish the phosphoric acid solution with water to balance the volatilization and the water consumed by the reaction.

[0003] Currently, visual inspection is used to confirm whether wafer bounce occurs after water replenishment, thereby determining whether the required amount of water has been added. However, due to individual sensory differences, even small bounces are difficult to detect. Furthermore, under process conditions, operators are required to wear special, heavy protective clothing and goggles, and the vapors emitted by hot phosphoric acid significantly obstruct vision, hindering the operator's ability to observe wafer bounce. Therefore, the accuracy of visual inspection for wafer bounce is low, which affects the control of water replenishment, easily causing scratches and breakage on the wafer and compromising the etching effect. Summary of the Invention

[0004] The embodiments of the present disclosure provide a testing device and a testing method for semiconductor cleaning equipment, which can detect wafer bounce based on the testing device, avoid the use of human eye observation, and improve the accuracy of detecting wafer bounce, thereby preventing scratches and damage to the wafer and improving the etching effect.

[0005] To achieve the above objectives, the embodiments of the present disclosure adopt the following technical solutions:

[0006] In one aspect, an embodiment of the present disclosure provides a testing device for use in semiconductor cleaning equipment, the semiconductor cleaning equipment including a process tank in which a wafer to be cleaned is placed. The testing device includes: a test balance mechanism, an elastic component, and a test component, wherein two ends of the elastic component are respectively connected to the test balance mechanism and the test component; the test balance mechanism, the elastic component, and the test component are configured to form a lever system with the wafer to be cleaned.

[0007] One end of the test balance mechanism is connected to the elastic component, and the other end is used to support the wafer to be cleaned in the process tank;

[0008] The test balance mechanism is used to change the deformation of the elastic component based on the lever principle when the wafer to be cleaned bounces;

[0009] The testing component is used to test the deformation amount of the elastic component.

[0010] In some embodiments, the test balance mechanism includes: a rotatable component and a test balance component;

[0011] The test balance assembly includes a first part and a second part; one end of the first part is fixedly connected to the second part, and the other end of the first part is disposed in the process tank and is used to support the wafer to be cleaned; the end of the second part not connected to the first part is connected to the elastic component;

[0012] The rotatable component is connected to a connection position between the first part and the second part, and a contact point between the rotatable component and the connection position is a fixed point;

[0013] The first part is used to rotate around the fixed point when the wafer to be cleaned bounces;

[0014] The rotatable component is used to rotate around the axis of the rotatable component under the drive of the first part;

[0015] The second part is used to rotate around the fixed point under the drive of the first part and the rotatable component to change the deformation of the elastic component.

[0016] In some embodiments, the first part includes a power rod, a connecting rod, and a supporting member connected in sequence; the supporting member includes a base and a supporting portion provided on the base, the base is connected to the connecting rod, and the supporting portion is used to support the wafer to be cleaned; wherein a first angle is formed between the power rod and the connecting rod, and a second angle is formed between the connecting rod and the base;

[0017] The second part includes a resistance rod; one end of the resistance rod is connected to the power rod, and the other end of the resistance rod is connected to the elastic component.

[0018] In some embodiments, the power rod and the resistance rod are integrally formed.

[0019] In some embodiments, the first angle and / or the second angle is 90 degrees.

[0020] In some embodiments, the testing device further comprises: a support portion and a fixing plate;

[0021] The supporting portion is fixed on the fixing plate, and the supporting portion includes a supporting surface and a fixing surface that are oppositely arranged. The fixing surface is in contact with the fixing plate, and the supporting surface is used to support the test balance mechanism.

[0022] In some embodiments, the elastic component includes a spring and the test component includes a load cell.

[0023] In some embodiments, the test assembly also includes a slide groove, and the force sensor can move along the slide groove before the installation position is determined; after the installation position is determined, it is fixed to the slide groove; the installation position is the position of the force sensor when the test balance mechanism can support the wafer to be cleaned in the process tank and the lever system maintains a balanced state.

[0024] On the other hand, an embodiment of the present disclosure provides a method for testing a semiconductor cleaning device, wherein the semiconductor cleaning device includes a lifting device and a process tank;

[0025] The testing method of the semiconductor cleaning equipment includes:

[0026] The lifting device carries the wafer to be cleaned and drives the wafer to be cleaned to move into the process tank;

[0027] Adjusting the position of the test assembly of the test device so that the test balance mechanism of the test device replaces the lifting device to support the wafer to be cleaned;

[0028] Performing multiple concentration ratio tests on the chemical liquid in the process tank, each concentration ratio test including at least one chemical liquid concentration ratio test;

[0029] Selecting, based on the recorded results of the multiple groups of concentration ratio tests, a water replenishment amount that satisfies the conditions that the wafer to be cleaned does not bounce after water replenishment and that the concentration of the chemical liquid in the process tank after water replenishment is within an ideal concentration range, wherein the recorded results include the water replenishment amount for each time, the bounce of the wafer to be cleaned after water replenishment, and the concentration value of the chemical liquid in the process tank after water replenishment;

[0030] The chemical liquid concentration ratio test includes:

[0031] When the water replenishment conditions are met, replenishing water to the process tank;

[0032] Determining whether the wafer to be cleaned has bounced according to the test value of the test component of the test device after the water replenishment;

[0033] Determine the test steps after the current water replenishment according to the judgment result, wherein the test steps after the current water replenishment include any one of the following steps: ending the current test, performing the next chemical liquid concentration ratio test, and replacing the chemical liquid in the process tank and performing the next set of concentration ratio tests;

[0034] The amount of water replenished this time, the bounce of the wafer to be cleaned after the water replenishment, and the concentration value of the chemical liquid in the process tank after the water replenishment are recorded.

[0035] In some embodiments, when the water replenishment condition is met, replenishing water to the process tank includes:

[0036] If the difference between the ideal concentration of the chemical liquid in the process tank and the actual concentration of the chemical liquid in the process tank is within a preset concentration difference range, water is added to the process tank.

[0037] In some embodiments, judging whether the wafer to be cleaned has bounced according to the test value of the test component of the test device after the current water replenishment includes:

[0038] Determine the difference between the absolute value of the change percentage A1 of the test value of the test component of the test device after the current water replenishment and the preset percentage A2, where A1 = [(A-A0) / A0] × 100%, A is the test value of the test component of the test device after the current water replenishment, and A0 is the test value of the test component of the test device before the current water replenishment;

[0039] If the difference is greater than or equal to zero, the wafer to be cleaned has bounced; if the difference is less than zero, the wafer to be cleaned has not bounced.

[0040] In some embodiments, determining the test steps after the water replenishment according to the judgment result includes:

[0041] If the wafer to be cleaned does not bounce after the current water replenishment and the number of water replenishment times has not reached the preset number of water replenishment times, the next chemical liquid concentration ratio test is performed after the preset time period;

[0042] Alternatively, if the wafer to be cleaned does not bounce after the water replenishment, and the number of water replenishment times reaches the preset number of water replenishment times, then the test is terminated;

[0043] Alternatively, if the wafer to be cleaned jumps after this water replenishment, the chemical liquid in the process tank is replaced and the next group of concentration ratio tests is performed; wherein, this chemical liquid concentration ratio test is the i-th chemical liquid concentration ratio test of the current group, and the water replenishment amount of the i-th chemical liquid concentration ratio test of the current group is greater than the water replenishment amount of the i-th chemical liquid concentration ratio test of the next group, i is a positive integer, and 1≤i<the preset number of water replenishment times.

[0044] The disclosed embodiments provide a testing device, a semiconductor cleaning system, and a testing method thereof. In the testing device, the vibration of the wafer to be cleaned is converted into a measurable deformation change of the elastic component through the cooperation of a test balance mechanism, an elastic component, and a test component. Thus, whether the wafer to be cleaned has vibrated can be determined by the change in the test data of the test component. This avoids the use of human eye observation, thereby avoiding personal safety issues and reducing the risk factor. In addition, the testing device is not affected by steam in the process environment, and can greatly improve the accuracy and efficiency of detecting wafer vibration, thereby preventing scratches and breakage of the wafer, reducing the wafer breakage rate, and improving the etching effect.

[0045] The above description is only an overview of the technical solution of the present disclosure. In order to more clearly understand the technical means of the present disclosure, it can be implemented in accordance with the contents of the specification. In order to make the above and other purposes, features and advantages of the present disclosure more obvious and easy to understand, the specific implementation methods of the present disclosure are listed below. BRIEF DESCRIPTION OF THE DRAWINGS

[0046] The following is a brief introduction to the drawings required for use in the embodiments or descriptions of the prior art in conjunction with the accompanying drawings. Obviously, the drawings described below are only some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0047] FIG1 is a schematic structural diagram of a testing device provided by an embodiment of the present disclosure;

[0048] FIG2 is a schematic structural diagram of a test balance mechanism provided by an embodiment of the present disclosure;

[0049] FIG3 is an enlarged schematic diagram of area E in FIG1 ;

[0050] FIG4 is a schematic diagram of the torque principle of FIG1 ;

[0051] FIG5 is a schematic diagram of a structure in which a wafer to be cleaned experiences chip skipping according to an embodiment of the present disclosure;

[0052] FIG6 is a flow chart of a method for testing semiconductor cleaning equipment provided in an embodiment of the present disclosure. DETAILED DESCRIPTION

[0053] To make the objectives, technical solutions, and advantages of the present disclosure more clear, the technical solutions of the present disclosure will be clearly and completely described below in conjunction with the specific embodiments of the present disclosure and the corresponding drawings. Obviously, the described embodiments are only part of the embodiments of the present disclosure, not all of the embodiments. Based on the embodiments of the present disclosure, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present disclosure.

[0054] In the embodiments of the present disclosure, words such as "first" and "second" are used to distinguish between identical or similar items with substantially the same functions and effects. This is only for the purpose of clearly describing the technical solutions of the embodiments of the present disclosure, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features.

[0055] In the embodiments of the present disclosure, "multi-layer" means two or more layers, and "multiple" means two or more layers, unless otherwise specifically defined. In the description of the present disclosure, it should be understood that the terms "upper", "lower", "front", "back", "inner", "outer", etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing the present disclosure and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore should not be understood as limiting the present disclosure.

[0056] Currently, hot phosphoric acid cleaning equipment uses a hot phosphoric acid etchant, which is made from a mixture of concentrated phosphoric acid and deionized water (DIW). The boiling point of the etchant increases with increasing phosphoric acid concentration, forming an azeotrope with water. As the water evaporates, the water content decreases, and the phosphoric acid concentration increases, causing the boiling point to rise as the water content decreases. Boiling can cause the wafer to shake, potentially colliding with the lifter and causing scratches or breakage. Therefore, the chemical solution must remain cool during the hot phosphoric acid etching process.

[0057] A stable etch rate is crucial for silicon nitride wafer manufacturing. Key factors influencing the etch rate include water content (or phosphoric acid volume fraction), reaction temperature, and the rate of phosphoric acid replacement on the wafer surface. Current cleaning equipment is capable of maintaining stable flow and temperature, making volume fraction regulation and control crucial. To maximize equipment availability and reduce acid change time, a preheating method is typically employed. This involves heating the phosphoric acid to a specific temperature (e.g., 100°C) before adding it to the reaction tank. As the temperature of the phosphoric acid in the reaction tank increases, the water content evaporates, increasing the volume fraction. The volume fraction of phosphoric acid affects the etch rate and, consequently, the etching effect; therefore, it must be maintained within a certain range. During the acid change process, the water in the phosphoric acid is allowed to evaporate naturally until the desired concentration is reached. Water is then intermittently added to the phosphoric acid solution to balance the volatilization and water consumption, maintaining a constant volume fraction and effectively controlling the etch rate. However, due to different equipment configurations, the mechanical structure will also be different to a certain extent, and the airflow field of the entire machine will also change, making it difficult to control the volatilization amount of the liquid in the phosphoric acid and the amount of water replenishment.

[0058] Currently, human visual observation is used to determine whether the amount of water replenishment meets the requirements; this method has a low accuracy rate in detecting wafer bounce, affects the etching effect, and has a high risk factor.

[0059] Based on the above, an embodiment of the present disclosure provides a testing device, which is applied to semiconductor cleaning equipment. The semiconductor cleaning equipment includes a process tank 4, in which a wafer 6 to be cleaned is arranged. Referring to Figure 1, the testing device includes: a test balance mechanism 1, an elastic component 2 and a test component 3, and the two ends of the elastic component 2 are respectively fixed to the test balance mechanism 1 and the test component 3; the test balance mechanism 1, the elastic component 2, the test component 3 and the wafer 6 to be cleaned form a lever system.

[0060] One end of the test balance mechanism 1 is connected to the elastic component 2, and the other end is used to support the wafer 6 to be cleaned in the process tank 4; the test balance mechanism 1 is used to: when the wafer 6 to be cleaned jumps, based on the lever principle, change the deformation of the elastic component 2; the test component 3 is used to test the deformation of the elastic component 2.

[0061] The test balance mechanism 1, elastic component 2, test component 3, and wafer to be cleaned 6 comprise a lever system. Before water is added to the process tank 4, the test balance mechanism 1 is provided with the elastic component 2 and test component 3 at one end, and the wafer to be cleaned 6 at the other end, maintaining a torque-stable state. After water is added to the process tank 4, if the amount of water added is inappropriate, causing boiling, the wafer to be cleaned 6 will bounce, changing the force acting on the test balance mechanism 1. Based on the lever principle, this in turn causes a change in the deformation of the elastic component 2, which is ultimately fed back to the test component 3. Therefore, changes in the test data from the test component 3 can be used to determine whether the wafer to be cleaned 6 has bounced, thereby determining whether the amount of water added meets the requirements, ensuring that after water addition, the concentration of the chemical liquid in the process tank 4 is within the ideal concentration range and does not boil.

[0062] It should be noted that when the chemical liquid boils, the wafer 6 to be cleaned may bounce, also known as chip jumping. This is because the boiling chemical liquid pushes the wafer 6 to be cleaned away from its original support, causing it to bounce up and down within a certain range. In other words, since the boiling chemical liquid pushes the wafer 6 to be cleaned away from its original support, the two ends of the test balance mechanism 1 are no longer balanced. Based on the principle of leverage, the deformation of the elastic component 2 changes. Therefore, changes in the test data of the test component 3 can be used to determine whether the wafer 6 to be cleaned has bounced.

[0063] The specific structures of the above-mentioned test balance mechanism 1, elastic component 2 and test component 3 are not limited, as long as they meet the corresponding functions.

[0064] An embodiment of the present disclosure provides a testing device, which converts the bounce of the wafer 6 to be cleaned into a measurable deformation change of the elastic component 2 through the cooperation of the test balance mechanism 1, the elastic component 2 and the test component 3, so that it can be judged whether the wafer 6 to be cleaned has bounced through the change of the test data of the test component 3; thereby avoiding the use of human eye observation, and thus avoiding personal safety issues and reducing the risk factor; in addition, the testing device is not affected by the steam in the process environment, and can greatly improve the accuracy and efficiency of detecting wafer bounce, thereby preventing scratches and damage to the wafer, reducing the wafer breakage rate, and improving the etching effect.

[0065] To simplify the structure and facilitate implementation, in some embodiments, as shown in FIG2 , the test balance mechanism 1 further includes: a rotatable component 12 and a test balance component; the test balance component includes a first portion 11 and a second portion 10; one end of the first portion 11 is fixedly connected to the second portion 10, and the other end of the first portion 11 is disposed in the process tank 4 and is used to support the wafer 6 to be cleaned; the end of the second portion 10 not connected to the first portion 11 is connected to the elastic component 2; the rotatable component 12 is fixed at the connection position S1 between the first portion 11 and the second portion 10, and the contact point between the rotatable component 12 and the connection position S1 is the fixed point S. In other words, the position where the first portion 11 is connected to the second portion 10 is the connection position S1, the rotatable component 12 is fixedly connected at the connection position S1, and the contact point between the rotatable component 12 and the connection position S1 is the fixed point S.

[0066] The first portion 11 is configured to rotate about a fixed point S in the event that the wafer 6 to be cleaned bounces. The rotatable assembly 12, driven by the first portion 11, is configured to rotate about its axis. The second portion 10, driven by the first portion 11 and the rotatable assembly 12, is configured to rotate about the fixed point S to change the deformation of the elastic assembly 2. In other words, the fixed point S is located on the rotational axis of the first portion 11 and the second portion 10, and therefore, both the first portion 11 and the second portion 10 can rotate about the fixed point S.

[0067] The specific structures of the first portion 11, second portion 10, and rotatable assembly 12 are not limited and can be selected based on practical needs. For example, the rotatable assembly 12 may include structures such as an axle, bearings, couplings, or gears. It should be noted that, driven by the first portion 11, the rotatable assembly 12 may rotate partially or entirely, without limitation.

[0068] It should be noted that when the wafer 6 to be cleaned bounces, the amplitude of the rotation of the first part 11 around the fixed point S is small, and the effect on the torque is very weak. If the rotatable component 12 is not provided, it is difficult for the second part 10 to rotate and change the deformation of the elastic component 2. Then, the test value of the test component 3 will not change, and the bounce of the wafer 6 to be cleaned cannot be detected. Therefore, the embodiment of the present disclosure provides a rotatable component 12 to amplify the small rotation of the first part 11 around the fixed point S into a large rotation of the rotatable component 12, thereby driving the second part 10 to rotate and change the deformation of the elastic component 2, and finally detecting the bounce of the wafer 6 to be cleaned through the test component 3.

[0069] In order to further simplify the structure and reduce the difficulty of manufacturing, in some embodiments, as shown in Figure 2, the first part 11 includes a power rod 111, a connecting rod 112 and a supporting member connected in sequence; the supporting member includes a base 113 and a supporting portion 114 arranged on the base 113, the base 113 is fixedly connected to the connecting rod 114, and the supporting portion 114 is used to support the wafer 6 to be cleaned; wherein, a first angle a is formed between the power rod 111 and the connecting rod 112, and a second angle b is formed between the connecting rod 112 and the base 113; the second part 10 includes a resistance rod 102; one end of the resistance rod 102 is connected to the power rod 111, and the other end is connected to the elastic component 2.

[0070] The range of the first angle a and the second angle b is not limited. For example, the first angle a and the second angle b can be acute angles, right angles or obtuse angles, respectively. FIG2 illustrates an example in which the first angle a and the second angle b are both right angles.

[0071] There is no limit to the number of the above-mentioned supporting parts 114; in order to minimize the contact area with the wafer 6 to be cleaned while ensuring the supporting strength, two supporting parts 114 can be optionally provided, respectively contacting the two opposite edges of the wafer 6 to be cleaned. Since the edge of the wafer 6 to be cleaned is an arc surface, in order to reduce the damage to the wafer 6 to be cleaned, the upper surface of the supporting part 114 is an arc surface, which contacts the edge of the wafer 6 to be cleaned. The wafer 6 to be cleaned can be placed vertically on the supporting part 114, and the supporting part 114 is vertically arranged and perpendicular to the base 113. In order to improve the cleaning efficiency, a plurality of wafers 6 to be cleaned can be arranged on the supporting part 114. The structure of the base 113 is not limited. For example, the base 113 may include a bottom rod or a bottom plate.

[0072] The power rod 111, the connecting rod 112, and the supporting member can be integrally formed or separately provided; this is not limited here. To reduce costs, for example, the power rod 111 and the connecting rod 112 can be fixed by fasteners (e.g., screws or bolts), the connecting rod 112 and the base 113 can be fixed by fasteners (e.g., screws or bolts), and the base 113 and the supporting member 114 can be fixed by fasteners (e.g., screws or bolts) or integrally formed.

[0073] The power rod 111 and the resistance rod 102 may be connected by welding, fastener connection or integral molding, etc., which is not limited here.

[0074] The power rod 111, the fixed point S and the resistance rod 102 can be arranged along the same straight line to reduce the difficulty of design and production. The end of the resistance rod 102 connected to the elastic component 2 can be provided with a connection hole 101 as shown in Figure 1, and connected to the elastic component 2 through the connection hole 101.

[0075] In some embodiments, the power rod 111 and the resistance rod 102 are integrally formed to simplify the manufacturing process and reduce costs.

[0076] In some embodiments, to reduce structural complexity, as shown in FIG2 , both the first angle a and the second angle b are 90 degrees; that is, the power rod 111 and the connecting rod 112 are arranged perpendicularly, and the connecting rod 112 is arranged perpendicularly to the base 113. However, this is not restrictive, and in some other embodiments not shown in the figures, only the first angle a or only the second angle b may be 90 degrees, which is also feasible and falls within the scope of protection of the present disclosure.

[0077] In one or more embodiments, in order to support the rotatable component 12, referring to Figure 1, the testing device also includes: a support portion 7 and a fixed plate 8; the support portion 7 is fixedly connected to the fixed plate 8, and the support portion includes a supporting surface (not marked in Figure 1) and a fixed surface (not marked in Figure 1) that are relatively arranged, and the fixed surface is in contact with the fixed plate 8.

[0078] The support surface of the support portion 7 is structurally compatible with the rotatable component 12 to facilitate rotation of the rotatable component 12. For example, a groove is provided on the support surface to support the rotatable component 12. The portion of the rotatable component 12 that contacts the groove is a convex portion that matches the groove, thereby facilitating rotation of the rotatable component 12 within the groove.

[0079] It should be noted that when the test device is used in a semiconductor cleaning device, the fixing plate 8 can be set at a suitable position of the semiconductor cleaning device. The above test device can be used in conjunction with the semiconductor cleaning device and can be applied to semiconductor cleaning devices of different models.

[0080] In one or more embodiments, to facilitate implementation and reduce costs, the elastic component 2 includes a spring, and the test component 3 includes a force sensor. One end of the spring is connected to the resistance rod 102 through the connection hole 101, and the other end is connected to the force sensor.

[0081] In order to facilitate the setting of the installation position of the force sensor to adapt to different semiconductor cleaning equipment, in some embodiments, as shown in Figure 1, the test component 3 also includes a slide groove 9, and the force sensor can move along the slide groove 9 before the installation position is determined; after the installation position is determined, it is fixed to the slide groove 9; the installation position is the position where the force sensor is located when the test balance mechanism 1 can support the wafer 6 to be cleaned in the process tank 4 and the lever system maintains a balanced state.

[0082] It should be noted that in the process of determining the installation position, the force sensor can be moved along the slide 9 to change the deformation of the spring, generate elastic force, and then lift the wafer 6 to be cleaned through the test balance mechanism 1, so that a small gap is generated between the wafer 6 to be cleaned and the lifting device 5, but it does not deviate from the constraint range of the lifting device 5; when the test balance mechanism 1 replaces the lifting device 5 to support the wafer 6 to be cleaned, and the lever system formed by the test balance mechanism 1, the spring, the force sensor and the wafer 6 to be cleaned remains in a balanced state, the position of the force sensor is determined to be the installation position. When the test device is used to test the chemical liquid concentration ratio of the semiconductor cleaning equipment, the force sensor always remains in the installation position and remains fixed; the deformation of the spring will change with the rotation of the second part 10 of the test device, thereby changing the force acting on the force sensor, thereby changing the test value of the force sensor. FIG3 is an enlarged schematic diagram of area E in FIG1 . Referring to FIG3 , the supporting portion 114 of the test balance mechanism 1 contacts the edge of the wafer 6 to be cleaned, and a small gap exists between the lifting device 5 and the edge of the wafer 6 to be cleaned (the area defined by the black dashed circle B in FIG3 ). At this point, the lever system consisting of the test balance mechanism 1, the spring, the force sensor, and the wafer 6 to be cleaned is in a torque-stable state (i.e., a balanced state), satisfying F×L1=G×L2. Referring to FIG4 , F represents the spring tension, G represents the weight of the wafer 6 to be cleaned, and L1 and L2 represent the lever arms, respectively.

[0083] It should be noted that Figure 4 illustrates the spring in its stretched state, meaning that when the load cell is in its installed position, the spring is stretched. While the spring can also be compressed when the load cell is in its installed position, due to its light weight, additional fixings are required to maintain the compressed state, making the design relatively complex. Therefore, the structure shown in Figure 4 is often used.

[0084] After the installation position is determined, the force sensor can be fixed to the chute 9 using screws or other fasteners through the fixing hole (31 shown in Figure 1) of the force sensor. When the test device is applied to semiconductor cleaning equipment, the chute 9 can be set at a suitable position in the semiconductor cleaning equipment and fixed.

[0085] In the chemical liquid concentration ratio test, if the amount of water added is too much, the concentration of the chemical liquid will be greatly reduced, and the boiling point will also be reduced. As the temperature of the chemical liquid increases, boiling will easily occur, causing the wafer 6 to jump; if the amount of water added is too little, as the temperature of the chemical liquid increases, the water content in the chemical liquid will become less and less, causing the concentration of the chemical liquid to be difficult to maintain the ideal concentration value, which is not conducive to the control of the etching rate. Referring to Figure 5, after the wafer 6 to be cleaned jumps, a gap is generated between the wafer 6 to be cleaned and the supporting part 114 (the area defined by the black dotted circle C in Figure 5), thereby changing the force acting on the test balance mechanism 1, and then causing the change in the spring deformation, which is finally fed back to the force sensor; through the changes in the test data of the force sensor, it can be judged whether the wafer 6 to be cleaned jumps, thereby determining whether the amount of water added meets the requirements, so as to ensure that after water addition, the concentration of the chemical liquid in the process tank 4 is within the ideal concentration range and does not boil.

[0086] The embodiment of the present disclosure further provides a semiconductor cleaning system, comprising: semiconductor cleaning equipment and the above-mentioned testing device; the semiconductor cleaning equipment comprises a lifting device 5 and a process tank 4, and a chemical liquid is provided in the process tank 4.

[0087] The lifting device 5 is used to carry the wafer 6 to be cleaned and move the wafer 6 to be cleaned into the process tank 4; wherein the contact position between the lifting device 5 and the wafer 6 to be cleaned and the distance from the bottom of the process tank 4 is T1.

[0088] The testing device is used for: after the wafer 6 to be cleaned is set in the process tank 4, the test balance mechanism 1 replaces the lifting device 5 to support the wafer 6 to be cleaned, wherein the contact position between the test balance mechanism 1 and the wafer 6 to be cleaned and the distance from the bottom of the process tank 4 is T2, and T2 is greater than T1; after adding water to the process tank 4, test whether the wafer 6 to be cleaned jumps.

[0089] The specific structure of the above-mentioned lifting device 5 and process tank 4 can refer to the relevant technology and will not be described here. The structural description of the above-mentioned test device can refer to the aforementioned embodiment and will not be repeated here. The above-mentioned T2 is greater than T1, which can ensure that the test balance mechanism 1 can lift the wafer to be cleaned 6, so that a small gap is generated between the wafer to be cleaned 6 and the lifting device 5. Referring to Figure 4, the lifting device 5 may include a bearing assembly with a V-shaped longitudinal section, the bearing assembly including two bearing parts 501, a connecting part 502 and a bearing seat 503, the connecting part 502 is used to connect the bearing part 501 and the bearing seat 503, the contact position of the bearing part 501 with the wafer to be cleaned 6, and the distance from the bottom of the process tank 4 is T1 shown in Figure 4; the test balance mechanism 1 includes two supporting parts 114, the contact position of the supporting part 114 with the wafer to be cleaned 6, and the distance from the bottom of the process tank 4 is T2 shown in Figure 4, and T2 is greater than T1. The distance L2 between the two supporting portions 114 is greater than the distance L1 between the two bearing portions 501 ; the distance L3 between the bearing portion 501 and the supporting portion 114 can be defined according to actual conditions.

[0090] The semiconductor cleaning system may further include other structures, such as a concentration meter, etc. The concentration meter is used to test the concentration value of the chemical liquid in the process tank 4.

[0091] The chemical liquid is used to wet-etch the surface of the wafer 6 to be cleaned, thereby completing the cleaning process; the chemical liquid may include phosphoric acid solution.

[0092] This semiconductor cleaning system can detect wafer bounce based on a test device, avoiding the use of human eye observation, and can improve the accuracy of detecting wafer bounce, thereby preventing scratches and breakage of the wafer and improving the etching effect.

[0093] The present disclosure further provides a method for testing semiconductor cleaning equipment. The semiconductor cleaning equipment includes a lifting device 5 and a process tank 4. Referring to FIG. 6 , the method for testing the semiconductor cleaning equipment includes:

[0094] S1 . The lifting device 5 carries the wafer 6 to be cleaned and moves the wafer 6 to be cleaned into the process tank 4 .

[0095] S2 , adjusting the position of the test assembly 3 of the test device so that the test balance mechanism 1 of the test device replaces the lifting device 5 to support the wafer 6 to be cleaned.

[0096] S3. Perform multiple concentration ratio tests on the chemical liquid in the process tank 4. Each concentration ratio test includes at least one chemical liquid concentration ratio test.

[0097] S4. Based on the recorded results of multiple groups of concentration ratio tests, select the water replenishment amount that satisfies the conditions that the wafer 6 to be cleaned does not jump after water replenishment, and the concentration of the chemical liquid in the process tank 4 after water replenishment is within the ideal concentration range; wherein the recorded results include the water replenishment amount for each time, the jumping condition of the wafer 6 to be cleaned after water replenishment, and the concentration value of the chemical liquid in the process tank 4 after water replenishment.

[0098] The above-mentioned chemical liquid is used to wet-etch the surface of the wafer 6 to be cleaned, thereby completing the cleaning; the chemical liquid may include phosphoric acid solution, the ideal concentration range of the phosphoric acid solution is 86% to 87%, and the temperature range is 150°C to 170°C; at different concentrations, the boiling point of phosphoric acid is different. For example, at a concentration of 100%, the boiling point of phosphoric acid is 261°C; at a concentration of 85%, the boiling point of phosphoric acid is 158°C, and the boiling point increases with increasing concentration.

[0099] By executing steps S1-S4, the required amount of water replenishment can be obtained, thereby avoiding the use of human eye observation, thereby improving the accuracy of detecting wafer bounce, preventing scratches and breakage of the wafer, and improving the etching effect.

[0100] Among them, in step S3, the chemical liquid concentration ratio test includes:

[0101] S31. When the water replenishment conditions are met, water is replenished to the process tank 4.

[0102] The above water replenishment conditions can be determined according to actual requirements and are not limited here.

[0103] S32 , judging whether the wafer 6 to be cleaned has bounced according to the percentage of the change in the test value of the test component 3 of the test device after the water replenishment.

[0104] S33. Determine the test steps after this water replenishment based on the judgment result. The test steps after this water replenishment include any one of the following steps: ending this test, executing the next chemical liquid concentration ratio test, and replacing the chemical liquid in the process tank 4 and executing the next group of concentration ratio tests.

[0105] S34 , recording the amount of water replenished this time, the bounce of the wafer 6 to be cleaned after the water replenishment this time, and the concentration value of the chemical liquid in the process tank 4 after the water replenishment this time.

[0106] By executing steps S31-S34, the current water replenishment amount and the vibration of the wafer 6 to be cleaned after the current water replenishment can be obtained, so as to judge whether the current water replenishment amount is appropriate according to the vibration of the wafer 6 to be cleaned.

[0107] In some embodiments, S31, when the water replenishment conditions are met, replenishing water to the process tank 4 includes:

[0108] If the difference between the ideal concentration of the chemical liquid in the process tank 4 and the actual concentration of the chemical liquid in the process tank 4 is within the range of the preset concentration difference, water is added to the process tank 4 .

[0109] The ideal concentration of the chemical liquid in process tank 4 can be determined based on the specific properties of the chemical liquid. For example, if the chemical liquid includes phosphoric acid, the ideal concentration range of the phosphoric acid solution can be 86% to 87%. Therefore, the ideal concentration of the phosphoric acid solution can be 86%, 86.5%, or 87%, etc. The actual concentration of the chemical liquid in process tank 4 can be measured using a concentration meter. The preset concentration difference can be selected as required. For example, the preset concentration difference can range from (0, 0.15%), and the preset concentration difference can be 0.10%, 0.11%, 0.13%, or 0.15%, etc.

[0110] It should be noted that during the phosphate solution concentration ratio test, water replenishment should be initiated when the actual concentration of the phosphate solution is about to reach the ideal concentration of the phosphate solution, rather than when the actual concentration of the phosphate solution has already reached the ideal concentration of the phosphate solution. If water replenishment is initiated when the actual concentration of the phosphate solution has already reached the ideal concentration of the phosphate solution, the added water will take some time to diffuse in process tank 4, resulting in a certain delay in the effect of the added water on the concentration of the phosphate solution. During this delay period, the water in the phosphate solution will continue to evaporate, which can easily cause the actual concentration of the phosphate solution to exceed the ideal concentration of the phosphate solution. Therefore, it is necessary to start water replenishment when the ideal concentration of the phosphate solution is about to be reached, so as to maintain the actual concentration of the phosphate solution at the ideal concentration for a period of time after water replenishment. If the ideal concentration of the phosphate solution is 86% and the actual concentration of the phosphate solution in process tank 4 is 85.9%, the difference between the two is 0.1%. 0.1% is within the preset concentration difference range (0, 0.15%), meeting the water replenishment conditions, and water can be added to process tank 4.

[0111] In some embodiments, S32, judging whether the wafer 6 to be cleaned has bounced according to the percentage change of the test value of the test component 3 of the test device after the water replenishment, includes:

[0112] S321. Determine the difference between the absolute value of the change percentage A1 of the test value of the test component 3 of the test device after the water replenishment and the preset change percentage A2, where A1 = [(A-A0) / A0]×100%, A is the test value of the test component 3 of the test device after the water replenishment, and A0 is the test value of the test component 3 of the test device before the water replenishment.

[0113] It should be noted that after the wafer 6 to be cleaned jumps, it will jump up or down; for example, when the wafer 6 to be cleaned is supported by the test balance mechanism 1, the elastic component 2 is in a stretched state. If in the chemical liquid concentration ratio test, too much water is added, causing the chemical liquid to boil, if the wafer 6 to be cleaned jumps upward, A is less than A0, and at this time, A1 is less than zero; if the wafer 6 to be cleaned jumps downward, A is greater than A0, and at this time, A1 is greater than zero.

[0114] The above-mentioned preset change percentage can be determined according to actual requirements. For example, the range of the preset change percentage can be [18%, 25%]. For example, the preset change percentage can be 18%, 20%, 22% or 25%, etc.

[0115] S322. If the difference is greater than or equal to zero, the wafer 6 to be cleaned has jumped. At this time, the absolute value of the percentage change of the test value of the test component 3 of the test device after the water replenishment is greater than or equal to the preset percentage change; if the difference is less than zero, the wafer 6 to be cleaned has not jumped. At this time, the absolute value of the percentage change of the test value of the test component 3 of the test device after the water replenishment is less than the preset percentage change.

[0116] In some embodiments, S33, based on the judgment result, determining the test steps after the current water replenishment, includes:

[0117] If the wafer 6 to be cleaned does not bounce after the current water replenishment, and the number of water replenishment times has not reached the preset number of water replenishment times, the next chemical liquid concentration ratio test is performed after the preset time period.

[0118] It should be noted that the number of water replenishments includes the current water replenishment; the preset number of water replenishments is selected according to the actual situation. For example, the preset number of water replenishments can be 4 to 8 times.

[0119] Alternatively, if the wafer 6 to be cleaned does not bounce after the water replenishment, and the number of water replenishment times reaches the preset number of water replenishment times, the test is terminated.

[0120] Alternatively, if the wafer 6 to be cleaned jumps after this water replenishment, the chemical liquid in the process tank 4 is replaced and the next group of concentration ratio tests is performed; wherein, this chemical liquid concentration ratio test is the i-th chemical liquid concentration ratio test of the current group, and the water replenishment amount of the i-th chemical liquid concentration ratio test of the current group is greater than the water replenishment amount of the i-th chemical liquid concentration ratio test of the next group, i is a positive integer, and 1≤i<the preset number of water replenishment times.

[0121] The following describes the water replenishment test process using the preset water replenishment times of 3, the ideal concentration of the phosphoric acid solution of 86%, the actual concentration of the phosphoric acid solution in the process tank 4 of 85.9%, and the preset concentration difference range of (0, 0.15%) as an example.

[0122] Since the difference between the ideal concentration of the phosphoric acid solution and the actual concentration of the phosphoric acid solution is 0.1%, within the preset concentration difference range, the water replenishment condition is met, and water can be replenished into the process tank 4 for the first time, with a water replenishment amount of M1; after the first water replenishment, it is determined whether the wafer 6 to be cleaned has jumped.

[0123] If the wafer 6 to be cleaned does not jump after the first water replenishment, and the water replenishment condition is met again after the first water replenishment, water is replenished into the process tank 4 for the second time, and the water replenishment amount is M2; then, it is judged whether the wafer 6 to be cleaned jumps after the second water replenishment. If the wafer 6 to be cleaned does not jump after the second water replenishment, and the water replenishment condition is met again after the second water replenishment, water is replenished into the process tank 4 for the third time, and the water replenishment amount is M3. Since the preset number of water replenishments is 3 times, no water replenishment is performed after the third water replenishment, and this test is terminated. After the third water replenishment, it is still necessary to judge whether the wafer 6 to be cleaned jumps. If the wafer 6 to be cleaned jumps after the second water replenishment, the phosphoric acid solution in the process tank 4 is replaced, and the next set of tests is started; wherein, in the next set of tests, the first water replenishment amount can be M1, and the second water replenishment amount can be less than M2.

[0124] If the wafer 6 to be cleaned bounces after the first water replenishment, the phosphoric acid solution in the process tank 4 is replaced and the next set of tests is started. In the next set of tests, the first water replenishment amount is less than M1. The next set of test procedures can refer to the above-mentioned water replenishment test procedure for the current set.

[0125] According to the above test process, multiple groups of concentration ratio tests can be carried out, and test tables can be drawn to record the amount of water replenished each time, the beating of the wafer 6 to be cleaned after replenishment, and the concentration value of the chemical liquid in the process tank 4 after replenishment in each group of tests. Finally, a set of water replenishment amounts (i.e., phosphoric acid replenishment process parameters) is determined to ensure that after each replenishment, the concentration of the chemical liquid in the process tank 4 is within the ideal concentration range and does not boil.

[0126] It should be noted that the terms "comprises," "includes," or any other variations thereof are intended to encompass non-exclusive inclusion, such that a process, method, commodity, or apparatus that includes a series of elements includes not only those elements but also other elements not explicitly listed, or includes elements inherent to such process, method, commodity, or apparatus. In the absence of further limitations, an element defined by the phrase "comprises a..." does not exclude the presence of other identical elements in the process, method, commodity, or apparatus that includes the element.

[0127] References in this disclosure to "one embodiment," "an embodiment," or "one or more embodiments" mean that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the present disclosure. Furthermore, please note that instances of the phrase "in one embodiment" do not necessarily all refer to the same embodiment.

[0128] The foregoing is merely an embodiment of the present disclosure and is not intended to limit the present disclosure. Various modifications and variations are possible for those skilled in the art. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present disclosure are intended to be included within the scope of the claims of the present disclosure.

Claims

1. A testing device, characterized in that: Applicable to semiconductor cleaning equipment, the semiconductor cleaning equipment comprises a process tank, and the process tank is used to place the wafer to be cleaned; The testing device comprises: a testing balance mechanism, an elastic component and a testing component, wherein two ends of the elastic component are respectively connected to the testing balance mechanism and the testing component; the testing balance mechanism, the elastic component and the testing component are used to form a lever system with the wafer to be cleaned; One end of the test balance mechanism is connected to the elastic component, and the other end is used to support the wafer to be cleaned in the process tank; The test balance mechanism is used to change the deformation amount of the elastic component based on the lever principle when the wafer to be cleaned bounces; The testing component is used to test the deformation amount of the elastic component.

2. The testing device according to claim 1, characterized in that: The test balance mechanism comprises: a rotatable component and a test balance component; The test balance assembly comprises a first part and a second part; one end of the first part is fixedly connected to the second part, and the other end of the first part is arranged in the process tank and used to support the wafer to be cleaned; one end of the second part not connected to the first part is connected to the elastic assembly; The rotatable component is connected to a connection position between the first part and the second part, and a contact point between the rotatable component and the connection position is a fixed point; The first part is used to rotate around the fixed point when the wafer to be cleaned bounces; The rotatable component is used to rotate around the axis of the rotatable component under the drive of the first part; The second part is used to rotate around the fixed point driven by the first part and the rotatable component to change the deformation of the elastic component.

3. The testing device according to claim 2, characterized in that: The first part comprises a power rod, a connecting rod and a supporting member connected in sequence; the supporting member comprises a base and a supporting portion arranged on the base, the base is connected to the connecting rod, and the supporting portion is used to support the wafer to be cleaned; wherein a first angle is formed between the power rod and the connecting rod, and a second angle is formed between the connecting rod and the base; The second part comprises a resistance rod; one end of the resistance rod is connected to the power rod, and the other end of the resistance rod is connected to the elastic component.

4. The testing device according to claim 3, characterized in that: The power rod and the resistance rod are integrally formed.

5. The testing device according to claim 3, characterized in that: The first angle and / or the second angle is / are 90 degrees.

6. The testing device according to claim 1, characterized in that: The testing device further comprises: a supporting portion and a fixing plate; The support portion is connected to the fixing plate, and the support portion comprises a supporting surface and a fixing surface which are arranged opposite to each other, the fixing surface is in contact with the fixing plate, and the supporting surface is used to support the test balance mechanism.

7. The testing device according to claim 1, characterized in that: The elastic component includes a spring, and the test component includes a force sensor.

8. The testing device according to claim 7, characterized in that: The test assembly also includes a slide groove, and the force sensor can move along the slide groove before the installation position is determined; after the installation position is determined, it is fixed to the slide groove; the installation position is the position where the force sensor is located when the test balance mechanism supports the wafer to be cleaned in the process tank and the lever system maintains a balanced state.

9. A method for testing semiconductor cleaning equipment, characterized in that: The semiconductor cleaning equipment includes a lifting device and a process tank; The testing method of the semiconductor cleaning equipment comprises: The wafer to be cleaned is carried by the lifting device, and the wafer to be cleaned is driven to move into the process tank; Adjusting the position of the test assembly of the test device according to any one of claims 1 to 8 so that the test balance mechanism of the test device replaces the lifting device to support the wafer to be cleaned; Performing multiple concentration ratio tests on the chemical liquid in the process tank, each concentration ratio test including at least one chemical liquid concentration ratio test; According to the recorded results of the multiple groups of concentration ratio tests, select the water replenishment amount that satisfies that the wafer to be cleaned does not bounce after water replenishment, and that the concentration of the chemical liquid in the process tank after water replenishment is within the ideal concentration range, wherein the recorded results include the water replenishment amount of each time, the bounce of the wafer to be cleaned after water replenishment, and the concentration value of the chemical liquid in the process tank after water replenishment; Wherein, the chemical liquid concentration ratio test includes: When the water replenishment conditions are met, replenishing water to the process tank; According to the test value of the test component of the test device after the water replenishment, it is judged whether the wafer to be cleaned has bounced; According to the judgment result, the test steps after the water replenishment are determined, and the test steps after the water replenishment include any one of the steps of ending the test, performing the next chemical liquid concentration ratio test, and replacing the chemical liquid in the process tank and performing the next group of concentration ratio tests; The amount of water replenished this time, the bounce of the wafer to be cleaned after the water replenishment, and the concentration value of the chemical liquid in the process tank after the water replenishment are recorded.

10. The testing method according to claim 9, characterized in that: When the water replenishment condition is met, replenishing water to the process tank comprises: If the difference between the ideal concentration of the chemical liquid in the process tank and the actual concentration of the chemical liquid in the process tank is within a preset concentration difference range, water is added to the process tank.

11. The testing method according to claim 9, characterized in that: The step of judging whether the wafer to be cleaned has bounced according to the test value of the test component of the test device after the water replenishment comprises: Determine the difference between the absolute value of the percentage A1 of the test value change of the test component of the test device after the current water replenishment and the preset percentage A2, wherein A1=[(A-A0) / A0]×100%, A is the test value of the test component of the test device after the current water replenishment, and A0 is the test value of the test component of the test device before the current water replenishment; If the difference is greater than or equal to zero, the wafer to be cleaned has bounced; if the difference is less than zero, the wafer to be cleaned has not bounced.

12. The testing method according to claim 9, characterized in that: The test steps after the water replenishment are determined according to the judgment result, including: If the wafer to be cleaned does not bounce after the current water replenishment, and the number of water replenishments has not reached the preset number of water replenishments, the next chemical liquid concentration ratio test is performed after the preset time period; Alternatively, if the wafer to be cleaned does not bounce after the water replenishment, and the number of water replenishment times reaches the preset number of water replenishment times, then the test is terminated; Alternatively, if the wafer to be cleaned jumps after this water replenishment, the chemical liquid in the process tank is replaced and the next group of concentration ratio tests is performed; wherein, this chemical liquid concentration ratio test is the i-th chemical liquid concentration ratio test of the current group, and the water replenishment amount of the i-th chemical liquid concentration ratio test of the current group is greater than the water replenishment amount of the i-th chemical liquid concentration ratio test of the next group, i is a positive integer, and 1≤i<the preset number of water replenishment times.

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