Flow homogenization fixing component, integrated gas-intake device and semiconductor process apparatus

Abstract

The present application relates to the technical field of semiconductors. Disclosed are a flow homogenization fixing component, an integrated gas-intake device and a semiconductor apparatus. The flow homogenization fixing component is applied to an integrated gas-intake device of a semiconductor apparatus. The semiconductor apparatus comprises a process chamber. The integrated gas-intake device comprises a heating component and a flow homogenization component which are arranged in the process chamber. The flow homogenization fixing component comprises a sealing fit portion, an extension portion and a fixing member which are sequentially arranged from top to bottom, wherein the sealing fit portion is fixedly connected to one end of the extension portion, and the sealing fit portion is configured to be in sealing fit with the process chamber; and the fixing member is fixedly connected to the other end of the extension portion, the heating component is arranged on an upper surface of the fixing member, and a lower surface of the fixing member is configured to be fixed to the flow homogenization component. The present application can solve problems such as the failure of a sealing ring caused by the relatively high temperature of a heat source.

Description

Flow-uniform fixing components, air intake integrated devices, and semiconductor process equipment Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a uniform flow fixing component, an air intake integrated device and semiconductor process equipment. Background Art

[0002] Semiconductor coating equipment is one of the equipment used in the chip production process, and CVD (Chemical Vapor Deposition) coating equipment is widely used in the semiconductor field of thin film deposition of metals, metal compounds, metal oxides, etc. due to its high film formation rate, good film uniformity, good density, and the ability to deposit thin films on the surface of complex structures or in deep holes.

[0003] CVD coating equipment consists of an integrated gas inlet assembly, a vacuum reaction chamber, a substrate support assembly, and an integrated exhaust assembly. Utilizing the principles of chemical vapor deposition, the integrated gas inlet assembly delivers a variety of plasma- or heat-activated gas sources into the vacuum reaction chamber. These gases react chemically within the appropriate temperature and vacuum environment, depositing the resulting products on the substrate surface held by the substrate support assembly. Residual gas sources and reaction byproducts are then discharged through the integrated exhaust assembly to the facility for decomposition and disposal.

[0004] For CVD coating equipment, providing a heat source with good uniformity and high stability for the uniform flow components in its air intake integrated device is a key factor affecting the good uniformity of the thin film; however, if the temperature of the heat source is too high, it will seriously affect the sealing boundary between the air intake integrated device and the vacuum reaction chamber, causing the sealing ring at the sealing boundary to age rapidly, resulting in seal failure, and greatly shortening the service life of the sealing ring. Summary of the Invention

[0005] The embodiments of the present application provide a uniform flow fixing component, an air intake integrated device and semiconductor process equipment, which can effectively solve problems such as sealing ring failure caused by high heat source temperature.

[0006] To achieve the above objectives, the embodiments of the present application adopt the following technical solutions:

[0007] The embodiment of the present application provides a uniform flow fixing component, which is applied to an air intake integrated device of a semiconductor process equipment, wherein the semiconductor process equipment includes a process chamber, and the air intake integrated device includes a heating component and a uniform flow component arranged in the process chamber;

[0008] The uniform flow fixing component includes a sealing fitting part, an extension part and a fixing part arranged in sequence from top to bottom, wherein the sealing fitting part is fixedly connected to one end of the extension part, and the sealing fitting part is used to seal and fit with the process chamber; the fixing part is fixedly connected to the other end of the extension part, the upper surface of the fixing part is used to set the heating component, and the lower surface of the fixing part is used to be fixed to the uniform flow component.

[0009] An embodiment of the present application also provides an air intake integration device, which is applied to semiconductor process equipment. The semiconductor process equipment includes a process chamber. The air intake integration device includes: a heating component and a flow uniformity component arranged in the process chamber, and the above-mentioned flow uniformity fixing component.

[0010] The embodiment of the present application further provides a semiconductor process equipment, comprising a process chamber and the above-mentioned integrated gas intake device;

[0011] The semiconductor process equipment further includes a seal disposed between the sealing fitting and the process chamber.

[0012] An embodiment of the present application provides a uniform flow fixing component, an air intake integrated device and semiconductor process equipment. The uniform flow fixing component is applied to the air intake integrated device of the semiconductor process equipment, so that the heat emitted by the heating component of the air intake integrated device passes through the fixing component, the extension part and the sealing fitting part in sequence before reaching the seal between the sealing fitting part and the process chamber, thereby extending the heat transfer path between the heat source and the seal, thereby reducing the impact of the heat source temperature on the seal, and further extending the service life of the seal while ensuring the sealing effect.

[0013] The above description is only an overview of the technical solution of the present application. In order to more clearly understand the technical means of the present application, it can be implemented in accordance with the contents of the specification. In order to make the above and other purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are listed below. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0015] FIG1 is a schematic structural diagram of a CVD coating device provided by the related art;

[0016] FIG2 is a schematic structural diagram of a semiconductor process equipment provided in an embodiment of the present application;

[0017] FIG3 is a schematic structural diagram of a flow uniformity fixing component provided in an embodiment of the present application;

[0018] FIG4 is a cross-sectional schematic diagram of a flow uniforming fixing component provided in an embodiment of the present application;

[0019] FIG5 is a schematic structural diagram of a vent pipe provided in an embodiment of the present application;

[0020] FIG6 is a schematic structural diagram of a second insulating member and a temperature detection element provided in an embodiment of the present application;

[0021] FIG7 is an enlarged schematic diagram of a partial structure of a second insulating member provided in an embodiment of the present application;

[0022] FIG8 is a test diagram of the ambient temperature near the sealing member when the temperature of the heating component provided in an embodiment of the present application is set to 450° C.;

[0023] FIG9 is a test diagram of the ambient temperature near the sealing member when the temperature of the heating component is set to 550° C. according to an embodiment of the present application;

[0024] Description of reference numerals:

[0025] 10-Intake integrated device;

[0026] 100 - flow-uniform fixing component; 110 - sealing fitting portion; 120 - extension portion; 130 - fixing member; 140 - convex portion; 141 - through hole or blind hole;

[0027] 200-heating component;

[0028] 300-flow equalizing component; 310-flow equalizing plate; 320-annular fixing portion;

[0029] 410 - first spacer; 420 - second spacer; 430 - annular heat insulation member;

[0030] 500-temperature monitoring component;

[0031] 600-Isolation piece;

[0032] 700-temperature regulating component; 710-ventilation pipe;

[0033] 800 - insulating member; 810 - first insulating member; 820 - second insulating member; 821 - member body; 822 - annular protrusion; 8221 - annular groove; 8222 - annular cover; 8223 - bracket;

[0034] 900- auxiliary heating component; 910- ring heater;

[0035] 1010-temperature detection element;

[0036] 20-process chamber; 21-substrate; 22-chamber cover;

[0037] 30-seal;

[0038] 40-RF feed device;

[0039] 50-Carrying device. DETAILED DESCRIPTION

[0040] To make the purpose, technical solutions, and advantages of this application more clear, the technical solutions of this application will be clearly and completely described below in conjunction with the specific embodiments of this application and the corresponding drawings. Obviously, the embodiments described are only part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0041] In the embodiments of the present application, words such as "first" and "second" are used to distinguish identical or similar items with substantially the same functions and effects. This is only for the purpose of clearly describing the technical solutions of the embodiments of the present application, and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features.

[0042] In the embodiments of the present application, the meaning of "plurality" is two or more, unless otherwise specifically defined. In the description of the present application, it should be understood that the terms "upper", "lower", "inner", "outer", "front", "back", etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore should not be understood as limiting the present application.

[0043] The CVD coating equipment commonly used in related technologies is shown in Figure 1. After a variety of process gas sources enter the channel 11a in the gas mixing unit 11 and mix, they flow to the flow unit 15 below the back plate 13 of the flow unit, and are diffused and separated by the flow unit 15. Hundreds of small hole channels 15a on the flow unit 15 are all passed by airflow, reaching the upper surface of the substrate 17 above the substrate supporting module 6. The heating plate 12 in the air intake integrated module 5 and the substrate supporting module 6 work together to provide the thermal environment required for the gas source to undergo chemical reaction, forming a deposited thin film on the substrate 17, and the process by-products are discharged to the factory end with the airflow in the exhaust integrated module 7 for subsequent processing.

[0044] As shown in reference figure 1, the air intake integrated module 5 is installed on the cover plate 14 of the vacuum reaction chamber. The vacuum reaction chamber also includes a chamber body 81. A first sealing ring 14a is arranged between the back plate 13 of the uniform flow unit and the cover plate 14. A second sealing ring 81a is arranged between the cover plate 14 and the chamber body 81. The heating plate 12 is located directly above all the sealing boundaries inside the air intake integrated module (for example: the first sealing ring 14a and the second sealing ring 81a) and the sealing boundary of the chamber cover. The heat conduction and radiation paths are relatively short. Due to the temperature limit of the reasonable use conditions of the sealing ring, the applicable temperature of the air intake integrated module used in the CVD coating equipment is below 205°C; if it is used for high-temperature coating process, the sealing ring at the sealing boundary will age rapidly, resulting in sealing failure; at the same time, the service life of the sealing ring will be greatly shortened, resulting in frequent replacement and increased cost.

[0045] Referring to Figures 2 to 9 , based on the above situation, embodiments of the present application disclose a flow-uniform fixing assembly for use in an integrated gas inlet device 10 of semiconductor process equipment to alleviate the above-mentioned problems. The semiconductor process equipment includes a process chamber 20 , and the integrated gas inlet device 10 includes a heating component 200 and a flow-uniform component 300 disposed within the process chamber 20 . The heating component 200 provides the required thermal environment for the process, and the flow-uniform component 300 delivers the process gas relatively evenly into the process chamber 20 , facilitating the process.

[0046] Considering that the heating component 200 can increase the ambient temperature during operation, which can easily reduce the service life of some sealing structures or even cause the sealing structures to fail, the embodiment of the present application, through the design of the uniform flow fixing component 100, can extend the heat transfer path between the heating component 200 and the sealing structure, to a certain extent alleviating the problem of reduced service life or even failure of the sealing structure.

[0047] 3 and 4 , the disclosed flow-uniform fixing component 100 includes a sealing mating portion 110, an extension portion 120, and a fixing member 130, which are sequentially arranged from top to bottom. The sealing mating portion 110 is fixedly connected to one end of the extension portion 120, and the sealing mating portion 110 is used to seal and mate with the process chamber 20. Thus, by providing the sealing mating portion 110, a sealing mating with the process chamber 20 can be achieved, thereby ensuring the sealing between the entire flow-uniform fixing component 100 and the process chamber 20. Furthermore, the fixing member 130 is fixedly connected to the other end of the extension portion 120, and the upper surface of the fixing member 130 is used to arrange the heating component 200, while the lower surface of the fixing member 130 is used to fix to the flow-uniform component 300. In this way, the fixing member 130 can both support the heating component 200 and install the flow-uniform component 300.

[0048] For example, the extension portion 120 may be a circular ring structure, and the sealing mating portion 110 protrudes from the outer peripheral wall of the extension portion 120. The sealing mating portion 110 is also used to be fixed to the process chamber 20. In other words, the sealing mating portion 110 is not only sealed and mated with the process chamber 20, but also fixed to the process chamber 20. Thus, the fixing of the sealing mating portion 110 to the process chamber 20 can achieve a sealed fit and fixed connection between the entire flow uniform fixing component 100 and the process chamber 20, thereby ensuring the sealing and stability of the connection between the entire flow uniform fixing component 100 and the process chamber 20, which is a typical multi-purpose product.

[0049] Illustratively, the sealing fitting portion 110 may also be a circular ring structure, wherein the axial dimension of the sealing fitting portion 110 is relatively small, while the axial dimension of the extension portion 120 is relatively large and larger than the axial dimension of the sealing fitting portion 110 .

[0050] It should be noted that, in the embodiment, the sealing fitting portion 110 and the extension portion 120 are both circular ring structures. Of course, this is not restrictive. In some other embodiments not shown in the figures, the sealing fitting portion 110 and the extension portion 120 can each be other shapes, which are not specifically limited here.

[0051] For example, as shown in FIG4 , the cross-section of the sealing fitting portion 110 and the extension portion 120 as a whole may be L-shaped, but this is also not restrictive, and other shapes may also be used.

[0052] In some embodiments, the sealing fitting portion 110 and the extension portion 120 can be connected by welding, riveting, bonding, snapping, plugging, sleeve connection, etc. to facilitate manufacturing; in other embodiments, the sealing fitting portion 110 and the extension portion 120 can also be an integrated structure to improve the overall strength.

[0053] In addition, the fixed connection between the extension portion 120 and the fixing member 130 can be in the form of welding, bonding, riveting, etc., so as to improve the firmness of the connection.

[0054] For example, as shown in FIG2 , the fixing member 130 is a plate-like structure, arranged in a horizontal direction. The upward surface of the fixing member 130 forms the upper surface of the fixing member 130 , and the downward surface of the fixing member 130 forms the lower surface of the fixing member 130 . In this embodiment, the heating component 200 can be supported by the upper surface of the fixing member 130 . Of course, fasteners can also be provided to fix the heating component 200 to the fixing member 130 . In addition, the flow equalizing component 300 can also be fixed to the lower surface of the fixing member 130 by fasteners to ensure the stability of the flow equalizing component 300 above the supporting device 50 .

[0055] In an embodiment of the present application, the uniform flow fixing component 100 is applied to the air intake integrated device 10 of the semiconductor process equipment, and the sealing fitting part 110 and the process chamber 20 are sealed by the sealing part 30. When in use, the heat emitted by the heating component 200 of the air intake integrated device 10 passes through the fixing part 130, the extension part 120 and the sealing fitting part 110 in sequence before reaching the sealing part 30 between the sealing fitting part 110 and the process chamber 20. That is to say, due to the existence of the extension part 120, the heat transfer path between the heat source and the sealing part 30 is extended, thereby reducing the influence of the heat source temperature on the sealing part 30, and then the service life of the sealing part 30 can be extended while ensuring the sealing effect.

[0056] It is understandable that the greater the wall thickness of the extension portion 120, the greater the strength and the better the supporting performance; however, if the thickness is too large, on the one hand, it will increase the space occupied by the extension portion 120, which is not conducive to lightweighting and miniaturization; on the other hand, it will also increase the upward heat transfer efficiency, that is, the heat transferred to the sealing boundary, and will reduce the volume of the space enclosed by the extension portion 120 and the fixing member 130, thereby reducing the space available for setting up the heating component 200, resulting in a reduction in the size of the heating component 200 and reducing the heating efficiency and uniformity of the process gas.

[0057] In order to reduce the wall thickness of the extension portion 120 as much as possible while ensuring the strength of the uniform flow fixing component 100, the uniform flow fixing component 100 may further include a plurality of protrusions 140. As shown in FIG3 , the plurality of protrusions 140 are arranged at intervals on the inner circumferential wall of the extension portion 120. In this way, through the arrangement of the plurality of protrusions 140, multiple areas of the extension portion 120 can be strengthened, so that even when the thickness of the extension portion 120 is small, the strength of the extension portion 120 can still be ensured, thereby preventing it from being deformed arbitrarily due to insufficient strength.

[0058] For example, the flow-uniform fixing member 100 may include six protrusions 140, which are evenly distributed around the circumference of the extension 120. This ensures that the strength of each region of the extension 120 is relatively uniform, preventing the occurrence of weak spots. Of course, the protrusions 140 may also be of other numbers or in other arrangements, which are not specifically limited herein.

[0059] In the embodiment of the present application, some material can be removed from the protrusion 140 to reduce the mass of the protrusion 140, thereby reducing the mass of the entire flow uniform fixing component 100 and saving material. For example, the protrusion 140 can be provided with a through hole or a blind hole 141 to reduce the mass of the protrusion 140, save material, and reduce upward heat transfer.

[0060] In some embodiments, the protrusions 140, the sealing mating portion 110, and the extension portion 120 can be integrally formed. This manufacturing method can reduce manufacturing difficulty and shorten the manufacturing cycle while also ensuring overall strength. For example, integral molding can be achieved by casting, forging, machining, or the like. Of course, other methods are also possible and are not limited here.

[0061] In order to further alleviate the adverse effects of the heat generated by the heating component 200 on the seal 30, in an embodiment of the present application, the thermal conductivity of the extension portion 120 can be lower than the thermal conductivity of the fixing member 130. This design method can help reduce the heat transferred through the extension portion 120 and, to a certain extent, reduce the total heat transferred to the seal 30.

[0062] For example, the extension portion 120 can be made of Hastelloy C22, which has a thermal conductivity of 9.4-17.5w / m*k, and the fixing member 130 can be made of Ni-200, which has a thermal conductivity of 70w / m*k. Of course, the extension portion 120 and the fixing member 130 can each be made of other materials, which are not specifically limited here.

[0063] In addition, when the protrusion 140 and the extension 120 are integrally formed, the materials of the two are the same, both can be Hastelloy C22; and the material of the flow-uniform component 300 can be the same as that of the fixing member 130, both can be Ni-200.

[0064] In summary, the embodiment of the present application can extend the distance between the heating component 200 and the sealing component 30 through the design of the uniform flow fixing component 100, and by reducing the wall thickness of the extension portion 120 and selecting a material with relatively low thermal conductivity, the total amount of heat transferred to the sealing component 30 can be reduced.

[0065] In addition, the outer edge wall of the sealing mating portion 110 can be provided with multiple arcuate grooves, which can be used for assembly with other components (such as the annular thermal insulation member 430 described below) to achieve positioning. Of course, the sealing mating portion 110 can also be provided with multiple threaded holes to facilitate fixing with the isolation member 600 described below. In addition, the sealing mating portion 110 can also be provided with multiple reserved holes. The fixing member 130 can also be provided with threaded holes to facilitate fixed connection with the heating component 200.

[0066] Based on the above-mentioned uniform flow fixing component 100, the embodiment of the present application also discloses an air intake integrated device 10, which is applied to semiconductor process equipment. Referring to Figures 2 to 9, the semiconductor process equipment includes a process chamber 20, and the air intake integrated device 10 is arranged in the process chamber 20 to facilitate the delivery of process gas into the process chamber 20 through the uniform flow component 300. Of course, a heating component 200 can also be used to provide a thermal environment for the process carried out in the process chamber 20. The disclosed air intake integrated device 10 includes a heating component 200, a uniform flow component 300 and the above-mentioned uniform flow fixing component 100, wherein the heating component 200 and the uniform flow component 300 are both arranged in the process chamber 20 and fixed by the uniform flow fixing component 100.

[0067] As shown in FIG2 , the flow equalizer component 300 may include a flow equalizer plate 310 and an annular fixing portion 320. The annular fixing portion 320 is disposed at the edge of the flow equalizer plate 310 and is fixed to the flow equalizer fixing component 100 by connecting with the fixing member 130. Thus, the flow equalizer component 300 may be mounted to the flow equalizer fixing component 100 through the connection between the annular fixing portion 320 and the fixing member 130 to ensure the stability of the flow equalizer component 300. For example, the annular fixing portion 320 may be mounted to the lower surface of the fixing member 130 using fasteners.

[0068] In order to diffuse the gas into the process chamber 20, the flow uniforming plate 310 can be provided with a plurality of air holes, through which the process gas is introduced into the process chamber 20, thereby expanding the diffusion area of ​​the process gas in the process chamber 20, which is beneficial to improving the uniformity of the contact between the process gas and the surface of the substrate carried by the carrying device 50 located below the flow uniforming component 300, and further beneficial to improving the product yield.

[0069] To ensure that the gas can be diffused before entering the multiple air holes, in the embodiment shown in Figure 2, the upper surface of the flow equalizer 310 is spaced apart from the lower surface of the fixing member 130. At the same time, one end of the annular fixing portion 320 can be provided with an annular cylinder of a certain length, which is connected to the flow equalizer 310. In this way, the lower surface of the fixing member 130, the upper surface of the flow equalizer 310 and the inner wall of the annular cylinder together form a gas space. Before the process gas enters the multiple air holes, it first enters the gas space and is fully diffused in the gas space, so that the process gas can pass into the process chamber 20 through each air hole, so that the process gas can be fully diffused before entering the process chamber 20, which is beneficial to improve the uniformity and diffusion efficiency of the gas diffusion in the process chamber 20. That is to say, in the embodiment shown in Figure 2, since the fixing part 130 adopts a plate-like structure, the fixing part 130, while carrying the heating part 200 and the flow uniforming part 300, also forms a gas space for process gas diffusion together with the flow uniforming plate 310 and the annular fixing part 320. While ensuring the process gas diffusion effect, the structure of the flow uniforming part 300 is simplified, which is a typical multi-purpose object.

[0070] In order to deliver the process gas to the gas space, as shown in FIG2 , the gas inlet integrated device 10 may further include a gas delivery pipeline, which sequentially passes through the heating component 200 and the fixing component 130 and can extend to the gas space and communicate therewith, so as to facilitate delivery of the process gas to the gas space. For example, a gas mixing component may be provided at the inlet of the gas delivery pipeline. In this way, when a mixture of multiple process gases needs to be delivered to the process chamber 20 , the multiple process gases can be separately delivered to the gas mixing component via the upstream gas path for mixing, and then the mixed gas is introduced into the gas space through the gas delivery pipeline for diffusion, and finally introduced into the process chamber 20 through multiple air holes for reaction, thereby meeting the process requirements.

[0071] Taking into account that the heating component 200 is in a high-temperature state for a long time, in order to prevent the heating component 200 from adhering to the fixing component 130, the intake integration device 10 may also include a first spacer 410. As shown in Figure 2, the first spacer 410 is arranged between the heating component 200 and the fixing component 130. In this way, the heating component 200 and the fixing component 130 are separated by the first spacer 410, thereby alleviating the problem of adhesion between the heating component 200 and the fixing component 130 due to long-term high temperature.

[0072] Illustratively, the first spacer 410 may be a spacer plate, a spacer layer, etc., such as a ceramic plate, a ceramic layer, etc. Of course, it may also be made of other materials and shapes, which are not specifically limited here.

[0073] Considering that the heating component 200 is in a high temperature state for a long time, in order to prevent the uniform flow component 300 close to the heating component 200 from adhering to the fixing member 130, the intake integrated device 10 may also include a second spacer 420. As shown in FIG2 , the second spacer 420 is disposed between the uniform flow component 300 and the fixing member 130. In this way, the uniform flow component 300 and the fixing member 130 are separated by the second spacer 420, which can effectively alleviate the problem of adhesion between the uniform flow component 300 and the fixing member 130 due to long-term high temperature, thereby reducing maintenance costs. When the uniform flow component 300 and the fixing member 130 are made of the same material, such as Ni-200, adhesion is likely to occur at high temperatures. The second spacer 420 can effectively alleviate the adhesion problem.

[0074] Exemplarily, the second spacer 420 may be an insulation ring disposed between the annular fixing portion 320 and the fixing member 130 , such as a thin ceramic ring or a thin Hastelloy C22 ring. Of course, it may also be made of other materials and shapes, which are not specifically limited here.

[0075] To detect temperature, the air intake integrated device 10 may further include a temperature monitoring component 500, as shown in FIG2 . The temperature monitoring component 500 extends through the heating component 200 (the portion of the temperature monitoring component 500 extending through the heating component 200 in FIG2 is not shown) and faces the fixing member 130, thereby monitoring the temperature of the fixing member 130. Based on this configuration, the temperature monitoring component 500 can monitor the temperature of the fixing member 130 in real time, thereby providing a data basis for temperature control.

[0076] Exemplarily, the temperature monitoring component 500 can penetrate into the intake integration device 10 from top to bottom. In addition to passing through the heating component 200, it also passes through the above-mentioned first spacer 410 and the isolation component 600 described below, etc., to ensure that the detection end of the temperature monitoring component 500 can be opposite to the fixing component 130.

[0077] It should be noted that the upper surface of the fixing member 130 facing the heating member 200 may be provided with a blind hole, into which at least a portion of the detection terminal of the temperature monitoring member 500 is inserted. This blind hole not only limits the detection terminal but also allows the detection terminal to directly detect the bottom wall of the blind hole, which is closer to the flow-distributing member 300, thereby ensuring detection accuracy. Of course, in other embodiments, the detection terminal of the temperature monitoring member 500 may also face the upper surface of the fixing member 130 to directly detect the temperature of the upper surface.

[0078] Illustratively, the temperature monitoring component 500 may be a temperature sensor. Of course, it may also be other components, which is not specifically limited here.

[0079] Considering that the heating component 200 will transfer heat to the uniform flow fixing component 100, causing the uniform flow fixing component 100 to heat up, and when the air intake integrated device 10 is installed in the process chamber 20, the fixing part 130 and the extension part 120 of the uniform flow fixing component 100 can both be located inside the process chamber 20, so that the side wall of the process chamber 20 can block the fixing part 130 and the extension part 120 from dissipating heat to the outside; and the sealing fitting part 110 can be located outside the process chamber 20.

[0080] Based on the above, to prevent heat dissipation from the sealing mating portion 110, the air intake integrated device 10 may further include an annular heat insulator 430. As shown in FIG2 , the annular heat insulator 430 is disposed around the sealing mating portion 110. In other words, the annular heat insulator 430 covers the outer peripheral wall and a portion of the upper surface of the sealing mating portion 110. In this manner, the annular heat insulator 430 encloses the sealing mating portion 110, thereby effectively isolating the sealing mating portion 110 from dissipating heat outward.

[0081] In some embodiments not shown in the figures, a chamber cover 22 may be provided on the top of the process chamber 20. The chamber cover 22 is detachably mounted to the top of the process chamber 20, and the flow uniformity fixing component 100 may be mounted to the chamber cover 22. In other words, the process chamber 20 includes a base 21 and a chamber cover 22. The chamber cover 22 is detachably mounted to the top of the base 21, and the flow uniformity fixing component 100 may be mounted to the chamber cover 22.

[0082] Specifically, the lower surface of the sealing fitting part 110 can overlap the upper surface of the chamber cover 22 and be sealed by the sealing member 30, and the cross-section of the annular thermal insulation member 430 can be an L-shaped structure. The sealing fitting part 110 can be located in the inner space of the L-shaped structure, and the annular thermal insulation member 430 can be installed to the upper surface of the chamber cover 22. In this way, the outer peripheral wall, upper surface and lower surface of the sealing fitting part 110 can be wrapped by the annular thermal insulation member 430 and the upper surface of the chamber cover 22, which can achieve both the limitation of the sealing fitting part 110 and thermal insulation.

[0083] For example, the annular heat insulating member 430 may be made of ceramic, which has a good heat insulating effect. Of course, it may also be made of other materials, which is not specifically limited here.

[0084] In some embodiments, the air intake integration device 10 may further include an isolation member 600. As shown in FIG2 , the isolation member 600 is disposed on the sealing fitting portion 110 and is fixedly connected to the sealing fitting portion 110. The isolation member 600 may be used to block the opening of the flow-uniform fixing component 100 at one end of the sealing fitting portion 110.

[0085] Considering that the heating component 200 is located inside the uniform flow fixture 100 and the detection terminal of the temperature monitoring component 500 is located inside the uniform flow fixture 100, an overheat switch can also be provided inside the uniform flow fixture 100 to effectively prevent the temperature of the fixture 130 from overheating. The heating component 200, temperature monitoring component 500, overheat switch, and other components all require power supply or signal transmission, which requires cables. Therefore, the isolation member 600 can be provided with multiple avoidance holes to facilitate the passage of cables.

[0086] Illustratively, the isolation member 600 may be a plate, and its material may be aluminum alloy. Of course, the isolation member 600 may also be in other shapes and made of other materials, which are not specifically limited here.

[0087] To achieve cooling, the air intake integration device 10 may further include a temperature control component 700. As shown in FIG2 , the temperature control component 700 is disposed on the annular heat insulating component 430. The temperature control component 700 may cool the components surrounding the temperature control component 700 to prevent the heat diffused from the heating component 200 through the uniform flow fixing component 100 from adversely affecting components such as the seal 30 and cables.

[0088] It should be noted that if a temperature control component is added to the air intake integrated module shown in Figure 1, then in order to achieve cooling, the temperature control component needs to be set close to the sealing boundary. Since the uniform flow unit 15 is relatively close to the sealing boundary, the added temperature control component will inevitably be close to the uniform flow unit 15. When local cooling measures are taken, the temperature of the area of ​​the uniform flow unit 15 close to the temperature control component will be lower, while the temperature of the area away from the temperature control component will be higher, which will easily cause the temperature uniformity of the uniform flow unit 15 to deteriorate, resulting in condensed particles adhering to the uniform flow orifice channel, thereby deteriorating the film formation uniformity. In the present application, since the uniform flow fixing component 100 is provided, the sealing boundary formed by the sealing matching portion 110 and the chamber cover 22 (at the position of the seal 30) and the uniform flow component 300 are separated by an extension portion 120, so that the distance between the sealing boundary and the uniform flow component 300 is far enough. Therefore, the above-mentioned temperature control component 700 can be provided without affecting the temperature uniformity of the uniform flow component 300.

[0089] 5 , in some embodiments, the temperature control component 700 may include a vent pipe 710, wherein the first end of the vent pipe 710 is used for air intake, the second end of the vent pipe 710 is closed, and the height of the first end of the vent pipe 710 is higher than the height of the second end of the vent pipe 710. In addition, a plurality of air outlet holes are provided on the vent pipe 710, so that the cooling gas supplied from the outside can be received through the first end of the vent pipe 710 and discharged through the plurality of air outlet holes during the process of flowing toward the second end, thereby cooling the surrounding components (such as the seal 30, cables, etc.) to avoid the surrounding components from having their service life reduced or even failing due to the heat diffused by the uniform flow fixing component 100.

[0090] Based on the above-mentioned setting, the ventilation pipe 710 can be used to emit cooling gas to reduce the temperature of the environment in which the seal 30 and the cable are located, which is beneficial to extending the service life of the seal 30 and the cable; in addition, the cooling gas flows from a high position to a low position along the ventilation pipe 710, and the low position end is closed, so that the cooling gas is finally discharged through the air outlet to achieve a cooling effect on the seal 30 and the cable.

[0091] In some embodiments, the vent tube 710 may be an annular tube with multiple air outlets evenly arranged along the circumference of the annular tube. This allows the cooling gas to be evenly discharged along the circumferential direction, allowing the seal 30 and the cable to be evenly cooled in the circumferential direction.

[0092] To improve the cooling effect, the temperature control component 700 may further include multiple vent pipes 710. For example, multiple vent pipes 710 are arranged side by side to expand the exhaust area of ​​the cooling gas, thereby increasing the cooling area and improving the cooling effect. When the vent pipe 710 is an annular tube, multiple vent pipes 710 can also be nested. Of course, the vent pipe 710 can also have other shapes and can be arranged in other ways, which are not specifically limited here.

[0093] Furthermore, the diameter of the air outlet can be adjusted based on the set temperature of the heating element 200 in actual operating conditions. For example, the diameter can be increased when the set temperature is higher, and decreased when the set temperature is lower. For example, when the set temperature of the heating element 200 is 450°C, the diameter of the air outlet can be 1.5 mm. Of course, other corresponding relationships are possible and are not specifically limited here.

[0094] 2 to 9 , based on the above-mentioned air intake integrated device 10 , the embodiment of the present application further discloses a semiconductor process equipment, which may be a CVD coating equipment. Of course, it may also be other equipment, which is not specifically limited here.

[0095] The disclosed semiconductor process equipment includes a process chamber 20 and the aforementioned integrated gas intake device 10. Furthermore, the semiconductor process equipment may further include a seal 30 disposed between the sealing mating portion 110 and the process chamber 20 to seal the sealing mating portion 110 and the process chamber 20.

[0096] In some embodiments not shown in the figures, the process chamber 20 includes a base 21 and a chamber cover 22. A sealing member 30 may be disposed between the sealing mating portion 110 and the chamber cover 22 of the process chamber 20 to perform a sealing function.

[0097] According to different coating requirements, the coating of some metal films (for example, titanium metal) requires the process gas to be plasmatized and a chemical reaction to occur in a high-temperature environment (for example, above 400°C) to deposit a thin film. Therefore, if the gas inlet integrated device 10 of the above-mentioned semiconductor process equipment is applied to the coating of such metal films (for example, titanium metal), the materials of the gas mixing component, the uniform flow fixing component 100, and the uniform flow component 300 must all be made of conductive materials. In addition, the semiconductor process equipment may also include: a feeding device 40, a supporting device 50, an exhaust integrated device and other structures. The RF feeding device 40 is electrically connected to the gas mixing component for feeding RF energy into the gas mixing component; the gas mixing component, the uniform flow fixing component 100, and the uniform flow component 300 form a whole that serves as an upper electrode.

[0098] Referring to Figure 2, RF energy is fed into the air intake integrated device 10 via the RF feeding device 40. Specifically, the RF energy is sequentially transmitted to the gas mixing component, the uniform flow fixing component 100, and the uniform flow component 300, so that the metal components inside the air intake integrated device 10 are all irradiated with RF energy. As shown in Figure 2, in the semiconductor process equipment including the air intake integrated device 10, the air intake integrated device 10 can be used as an upper electrode, and the supporting device 50 can be used as a lower electrode, thereby providing the plasma environment required for the process reaction. After the gas passing through the uniform flow component 300 is plasmatized under the joint action of the upper electrode and the lower electrode, a chemical reaction occurs in a high-temperature environment above 400°C, and a thin film is deposited on the upper surface of the substrate. The remaining process gas and by-products are discharged by the exhaust integrated device to the factory end for subsequent decomposition treatment.

[0099] In order to meet process safety requirements, the carrier device 50 is installed on the base 21 of the process chamber 20 and is grounded via a lower adapter. In addition, the base 21 of the process chamber 20 is also grounded.

[0100] To reduce energy and heat loss, the process chamber 20 may further include an insulating component 800, as shown in FIG2 . The flow-uniforming fixing component 100 and the flow-uniforming component 300 form a flow-uniforming structure, and the insulating component 800 is disposed between the flow-uniforming structure and the chamber lid 22. The provision of the insulating component 800 can reduce radio frequency and temperature energy losses.

[0101] It should be noted that, in the embodiment shown in FIG2 , the insulating component 800 is only arranged between the flow-uniform structure and the chamber cover 22, but this is not restrictive. In some other embodiments not shown in the figure, the insulating component 800 may also be arranged only between the flow-uniform structure and the substrate 21; and in some other embodiments not shown in the figure, the insulating component 800 may also be arranged between the flow-uniform structure and the substrate 21 and the chamber cover 22 at the same time. Without violating the inventive concept and technical principles of the present application, the above situations are all within the protection scope of the present application.

[0102] 2 , in some embodiments, the insulating component 800 may include a first insulating member 810 and a second insulating member 820 disposed from top to bottom. The first insulating member 810 and the second insulating member 820 are both used to be fixed to the inner surface of the process chamber 20. The upper surface of the first insulating member 810 is fixed to the lower surface of the sealing mating portion 110, and the lower surface of the second insulating member 820 is flush with the lower surface of the flow uniforming member 300. Based on this arrangement, the first insulating member 810 and the second insulating member 820 cooperate to wrap the extension portion 120 and the fixing member 130 to reduce heat diffusion to the surrounding area, thereby achieving a thermal insulation effect. Furthermore, the first insulating member 810 and the second insulating member 820 cooperate to wrap some metal components carrying RF energy, thereby reducing RF energy loss.

[0103] For example, as shown in FIG2 , the cross-section of the first insulating member 810 can be L-shaped, wherein one inner side surface of the L-shape is fixedly connected to the upper surface of the chamber lid 22 of the process chamber 20, and the other inner side surface of the L-shape contacts the inner sidewall of the chamber lid 22. Unlike the embodiment without the insulating member 800, as shown in FIG2 , the lower surface of the sealing mating portion 110 overlaps the upper surface of the first insulating member 810, and the sealing member 30 is located between the sealing mating portion 110 and the first insulating member 810 to provide sealing and insulation from the process chamber 20. In addition, a sealing member 30 can also be provided between the first insulating member 810 and the chamber lid 22 to provide sealing and insulation.

[0104] Considering that the second insulating member 820 is closer to the reaction space of the process chamber 20, in the embodiment of the present application, the dielectric constant of the second insulating member 820 can be smaller than the dielectric constant of the first insulating member 810, so that the insulating effect of the second insulating member 820 is better than the insulating effect of the first insulating member 810, so as to better reduce the loss of radio frequency energy.

[0105] Considering that the heating component 200, the flow uniforming component 300, etc. are located in the space surrounded by the second insulating component 820, in the embodiment of the present application, the thermal conductivity of the second insulating component 820 can be lower than the thermal conductivity of the first insulating component 810, so that the thermal insulation performance of the second insulating component 820 is better than the thermal insulation performance of the first insulating component 810, which can help reduce the temperature energy loss of components such as the heating component 200 and the flow uniforming component 300.

[0106] It should be noted here that the lower surface of the second insulating member 820 is flush with the lower surface of the uniform flow component 300. On the one hand, it can prevent the lower surface of the second insulating member 820 from being located below the lower surface of the uniform flow component 300 and hindering the process gas from entering the process chamber 20 through the uniform flow component 300, thereby affecting the diffusion of the process gas in the process chamber 20. In other words, if the lower surface of the second insulating member 820 is located below the lower surface of the uniform flow component 300, that is, a portion of the inner side wall of the second insulating member 820 will protrude from the lower surface of the uniform flow plate 310, This prevents the gas flowing along the lower surface of the flow equalizer plate 310 from diffusing to the surroundings. On the other hand, it prevents the lower surface of the second insulating member 820 from being located above the lower surface of the flow equalizer component 300, thereby preventing the heat insulation effect on the flow equalizer component 300. In other words, if the lower surface of the second insulating member 820 is located above the lower surface of the flow equalizer component 300, that is, part of the outer peripheral wall of the flow equalizer plate 310 is separated from the wrapping of the second insulating member 820 and protrudes from the lower surface of the second insulating member 820, thus reducing the heat insulation effect of the second insulating member 820 on the flow equalizer component 300. Therefore, the flush setting can ensure that the process gas can fully diffuse without obstruction in the process chamber 20 and can also reduce temperature and energy loss.

[0107] To improve the temperature uniformity around the flow-leveling component 300, the semiconductor process equipment may further include an auxiliary heating component 900, as shown in Figures 6 and 7. The auxiliary heating component 900 is disposed around the flow-leveling component 300 and, through thermal radiation, can increase the temperature around the flow-leveling component 300, thereby offsetting some heat loss and making the temperature around the flow-leveling component 300 more uniform. The auxiliary heating component 900 may include a ring heater 910 to heat a ring around the flow-leveling component 300 and improve the temperature uniformity of the flow-leveling component 300. Of course, the auxiliary heating component 900 may also have other shapes, which are not specifically limited here.

[0108] Considering that the second insulating member 820 is located around the flow uniforming member 300 , the auxiliary heating member 900 may be disposed on the second insulating member 820 to achieve installation of the auxiliary heating member 900 .

[0109] 6 and 7 , in some embodiments, the second insulating member 820 may include a member body 821 and an annular protrusion 822, wherein the annular protrusion 822 is disposed on the outside of the member body 821, and at least a portion of the outer surface of the member body 821 is used to secure to the inner surface of the process chamber 20. Based on this arrangement, the member body 821 can be assembled with the process chamber 20. For example, as shown in FIG2 , the member body 821 is assembled on the chamber lid 22.

[0110] To facilitate installation of the auxiliary heating component 900, the annular protrusion 822 can be provided with an annular groove 8221. An annular cover 8222 is provided at the opening of the annular groove 8221. A plurality of brackets 8223 are provided between the annular groove 8221 and the annular cover 8222. The annular heater 910 is disposed between the annular groove 8221 and the annular cover 8222, and the brackets 8223 are used to support the annular heater 910. Based on this arrangement, the annular groove 8221 provides a space for the annular heater 910, while the annular cover 8222 provides a position limiter and thermal insulation for the annular heater 910, preventing the annular heater 910 from escaping the annular groove 8221 and dissipating heat. The plurality of brackets 8223 also provide support and position limiter for the annular heater 910, ensuring that the annular heater 910 does not move freely between the annular groove 8221 and the annular cover 8222. For example, the brackets 8223 may be stainless steel brackets.

[0111] Furthermore, the inner walls of the annular cover 8222 and the annular groove 8221 are both loosely fitted with the annular heater 910, that is, the inner walls of the annular cover 8222 and the annular groove 8221 are not in contact with the annular heater 910, but only in contact with the bracket 8223, thereby reducing the heat conduction efficiency and increasing the temperature around the uniform flow component 300 by heat radiation, thereby improving the overall uniformity.

[0112] In addition, while ensuring the overall strength of the second insulating member 820, multiple grooves can be opened on the outer wall of the second insulating member 820 to reduce the contact area between the second insulating member 820 and the chamber cover 22, thereby reducing heat transfer to the chamber cover 22 and reducing heat loss.

[0113] In order to achieve real-time monitoring of the temperature of the annular heater 910, the semiconductor device may further include a temperature detection element 1010, as shown in Figures 1 and 6. The detection end of the temperature detection element 1010 extends to the vicinity of the annular heater 910 to detect the temperature of the annular heater 910 in real time to prevent overheating.

[0114] Taking the semiconductor device shown in Figure 2 as an example, an experiment was conducted on the ambient temperature near the seal 30. The heating component 200 was set to 450°C and 550°C, respectively. The ventilation pipe 710 provided air cooling and heat dissipation. The wall thickness of the extension 120 of the uniform flow fixing component 100 was 2 mm. When the heating component 200 was set to 450°C and 550°C, respectively, the ambient temperature near the seal 30 was as shown in Figures 8 and 9. As can be seen from Figures 8 and 9, when the heating component 200 was set to 450°C, the ambient temperature near the seal 30 was 110°C; when the heating component 200 was set to 550°C, the ambient temperature near the seal 30 was 180°C. The ambient temperature near the seal 30 was significantly lower than when the heating component 200 was set to 550°C, which can reduce the impact of high temperatures on the seal 30 and extend its service life.

[0115] Referring to Figure 2, the process gas sources A, B, and C enter the gas mixing channel of the gas mixing component from the upstream gas path of the gas inlet integrated device 10, and after being fully mixed, enter the space above the uniform flow component 300. With the gas pressure, they pass through hundreds of through holes on the uniform flow component 300 and reach the upper surface of the substrate of the supporting device 50. The gas sources are plasmatized and chemical reactions occur in a high-temperature environment above 400°C, depositing a thin film on the upper surface of the substrate. The remaining process gases and by-products are discharged from the exhaust integrated device to the factory end for subsequent decomposition treatment.

[0116] In the semiconductor process equipment provided by the present application, the heat emitted by the heating component 200 of the air intake integrated device 10 can pass through the fixing part 130, the extension part 120 and the sealing fitting part 110 before reaching the seal 30 formed by the sealing fitting part 110 and the process chamber 20, thereby extending the heat transfer path between the heat source and the seal 30, thereby reducing the impact of the heat source temperature on the seal 30, thereby extending the service life of the seal 30 and ensuring the sealing effect.

[0117] It should be noted that the terms "comprises," "includes," or any other variations thereof are intended to encompass non-exclusive inclusion, such that a process, method, commodity, or apparatus that includes a series of elements includes not only those elements but also other elements not explicitly listed, or includes elements inherent to such process, method, commodity, or apparatus. In the absence of further limitations, an element defined by the phrase "comprises a..." does not exclude the presence of other identical elements in the process, method, commodity, or apparatus that includes the element.

[0118] References in this application to "one embodiment," "an embodiment," or "one or more embodiments" mean that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of this application. Furthermore, please note that instances of the phrase "in one embodiment" do not necessarily all refer to the same embodiment.

[0119] The foregoing is merely an embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application may have various changes and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principles of the present application should be included within the scope of the claims of the present application.

Claims

1. A flow-uniform fixing component, applied to an air intake integrated device of a semiconductor device, wherein the semiconductor device comprises a process chamber, and the air intake integrated device comprises a heating component and a flow-uniform fixing component arranged in the process chamber, characterized in that: The flow-uniform fixing component includes a sealing fitting part, an extension part and a fixing part which are arranged in sequence from top to bottom, wherein the sealing fitting part is fixedly connected to one end of the extension part, and the sealing fitting part is used for sealingly fitting with the process chamber; the fixing part is fixedly connected to the other end of the extension part, the upper surface of the fixing part is used for setting the heating component, and the lower surface of the fixing part is used for fixing with the flow-uniform component.

2. The flow-uniform fixing component according to claim 1, characterized in that: The extension portion is a circular ring structure, the sealing fitting portion protrudes from the outer peripheral wall of the extension portion, and the sealing fitting portion is also used to be fixed to the process chamber.

3. The flow-uniform fixing component according to claim 2, characterized in that: The flow-uniform fixing component further includes a plurality of protrusions, which are arranged at intervals on the inner peripheral wall of the extension portion.

4. The flow-uniform fixing component according to claim 3, characterized in that: The convex portion is provided with a through hole or a blind hole.

5. The flow-uniform fixing component according to claim 3, characterized in that: Each of the protrusions, the sealing fitting portion and the extension portion are integrally formed.

6. The flow-uniform fixing component according to claim 1, characterized in that: The thermal conductivity of the extension portion is smaller than the thermal conductivity of the fixing member.

7. An air intake integrated device, applied to a semiconductor device, wherein the semiconductor device includes a process chamber, characterized in that: The air intake integrated device comprises: a heating component and a flow-uniform component arranged in the process chamber, and a flow-uniform fixing component according to any one of claims 1 to 6.

8. The air intake integrated device according to claim 7, characterized in that: The flow equalizer component comprises a flow equalizer plate and an annular fixing portion, wherein the annular fixing portion is arranged at the edge of the flow equalizer plate, and the flow equalizer plate is fixed to the flow equalizer fixing component by being connected with the fixing piece.

9. The air intake integrated device according to claim 8, characterized in that: The fixing member is a plate-shaped structure, and the fixing member, the flow-distributing plate and the annular fixing portion enclose a gas space for diffusion of process gas.

10. The air intake integrated device according to claim 7, characterized in that: The air intake integrated device further comprises a first spacer, wherein the first spacer is arranged between the heating component and the fixing component; and / or, The air intake integrated device further includes a second spacer, which is arranged between the flow uniforming component and the fixing component.

11. The air intake integrated device according to claim 7, characterized in that: The air intake integrated device further includes a temperature monitoring component, which passes through the heating component and is opposite to the fixing component, and is used for monitoring the temperature of the fixing component.

12. The air intake integrated device according to claim 7, characterized in that: The air intake integrated device further includes an annular heat insulating member, which is disposed around the sealing fitting portion.

13. The air intake integrated device according to claim 12, characterized in that: The air intake integrated device further comprises an isolating member, which is disposed on the sealing fitting portion and fixedly connected to the sealing fitting portion.

14. The air intake integrated device according to claim 12, characterized in that: The air intake integration device also includes a temperature regulating component, and the temperature regulating component is arranged on the annular heat insulation component.

15. The air intake integrated device according to claim 14, characterized in that: The temperature regulating component comprises a vent pipe, a first end of the vent pipe is used for air intake, a second end of the vent pipe is closed, a height of the first end of the vent pipe is greater than a height of the second end of the vent pipe, and a plurality of air outlets are arranged on the vent pipe.

16. The air intake integrated device according to claim 15, characterized in that: The ventilation pipe is a circular ring-shaped pipe, and the plurality of air outlet holes are evenly arranged along the circumference of the circular ring-shaped pipe.

17. A semiconductor process equipment, characterized in that: include: A process chamber and an air intake integrated device as claimed in any one of claims 7 to 16; The semiconductor device further includes a seal disposed between the seal fitting portion and the process chamber.

18. The semiconductor process equipment according to claim 17, characterized in that: The process chamber comprises: a substrate, a chamber cover and an insulating component, the flow-uniforming fixing component and the flow-uniforming component form a flow-uniforming structure, and the insulating component is arranged between the flow-uniforming structure and the substrate and / or the insulating component is arranged between the flow-uniforming structure and the chamber cover.

19. The semiconductor process equipment according to claim 18, characterized in that: The insulating component comprises a first insulating member and a second insulating member arranged from top to bottom; The upper surface of the first insulating member is fixed to the lower surface of the sealing matching portion, and the lower surface of the second insulating member is arranged flush with the lower surface of the flow uniforming member; the first insulating member and the second insulating member are both used to be fixed to the inner surface of the process chamber; The dielectric constant of the second insulating member is smaller than the dielectric constant of the first insulating member, and the thermal conductivity of the second insulating member is smaller than the thermal conductivity of the first insulating member.

20. The semiconductor process equipment according to claim 19, characterized in that: The second insulating member comprises a member body and an annular convex portion, wherein the annular convex portion is arranged outside the member body, and at least a part of the outer surface of the member body is used to be fixed to the inner surface of the process chamber; The semiconductor device further includes an auxiliary heating component, wherein the auxiliary heating component includes a ring heater; The annular convex portion is provided with an annular groove, an annular cover is provided at the opening position of the annular groove, and a plurality of brackets are provided between the annular groove and the annular cover; The annular heater is arranged between the annular groove and the annular cover, the bracket is used to support the annular heater, and the inner walls of the annular cover and the annular groove are both in clearance fit with the annular heater.

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