Plasma processing device

Abstract

This plasma processing device comprises a plasma processing chamber, a substrate support table, and a control unit. The substrate support table is disposed in the plasma processing chamber and includes a base and an electrostatic chuck which is disposed on the base. The electrostatic chuck has a first zone and a second zone different from the first zone. A first heater is disposed in the first zone. A second heater is disposed in the second zone. The control unit is configured to control the duty cycles of pulsed power applied to the first heater and pulsed power applied to the second heater, in accordance with: the resistance value ratio of the resistance value of the second heater to the resistance value of the first heater; and the thermal resistance ratio of the thermal resistance of the substrate support table corresponding to the second zone to the thermal resistance of the substrate support table corresponding to the first zone.

Description

Plasma processing equipment

[0001] The present disclosure relates to a plasma processing apparatus.

[0002] Japanese Patent Laid-Open No. 2006-121222 discloses a substrate processing system including: a mounting table on which a substrate is placed; a heater that heats the substrate by supplying power thereto; a power supply unit that supplies power to the heater; a sensor that measures the resistance value of the heater; and a control device, wherein the control device records a conversion table that associates a plurality of resistance values ​​with a plurality of temperatures, acquires a reference resistance value measured by the sensor when the temperature of the heater is a reference temperature, acquires a temperature control resistance value measured by the sensor when the substrate is being heated by the heater, and controls the power supply unit based on the conversion table, the reference temperature, the reference resistance value, and the temperature control resistance value.

[0003] Japanese Patent Application Laid-Open No. 2020-009795

[0004] The present disclosure provides a technique for expanding the controllable temperature range when the temperature of each zone is controlled to the same temperature.

[0005] A plasma processing apparatus according to one aspect of the present disclosure includes a plasma processing chamber, a substrate support pedestal, and a controller. The substrate support pedestal is disposed in the plasma processing chamber and includes a base pedestal and an electrostatic chuck disposed on the base pedestal. The electrostatic chuck has a first zone and a second zone different from the first zone. A first heater is disposed in the first zone. A second heater is disposed in the second zone. The controller is configured to control duty ratios of pulse power applied to the first heater and pulse power applied to the second heater in accordance with a resistance ratio of the second heater to a resistance of the first heater and a thermal resistance ratio of the substrate support pedestal corresponding to the second zone to a thermal resistance of the substrate support pedestal corresponding to the first zone.

[0006] According to the present disclosure, it is possible to widen the controllable temperature range when controlling the temperature of each zone to the same temperature.

[0007] FIG. 1 is a diagram for explaining an example of the configuration of a capacitively coupled plasma processing apparatus according to an embodiment. FIG. 2 is a plan view showing an example of the configuration of an electrostatic chuck according to an embodiment. FIG. 3 is a cross-sectional view showing an example of the configuration of an electrostatic chuck according to an embodiment. FIG. 4 is a diagram for explaining the thermal resistance and heat generation amount of two zones of a substrate support part. FIG. 5A is a diagram for explaining an example of temperature control according to a comparative example. FIG. 5B is a diagram for explaining an example of temperature control according to a comparative example. FIG. 6A is a diagram for explaining an example of a case where the substrate temperature is increased by the temperature control according to the comparative example. FIG. 6B is a diagram for explaining an example of a case where the substrate temperature is decreased by the temperature control according to the comparative example. FIG. 7 is a diagram for explaining an example of temperature control according to the present embodiment. FIG. 8 is a diagram for explaining an example of a manufacturing process of a substrate support part according to an embodiment. FIG. 9A is a diagram for explaining an example of the configuration of a heater according to an embodiment. FIG. 9B is a diagram for explaining an example of the configuration of a heater according to an embodiment. FIG. 9C is a diagram for explaining an example of the configuration of a heater according to an embodiment. FIG. 9D is a diagram for explaining an example of the configuration of a heater according to an embodiment. FIG. 9E is a diagram for explaining an example of the configuration of a heater according to an embodiment. FIG. 9F is a diagram for explaining an example of the configuration of a heater according to an embodiment. FIG. 9G is a diagram for explaining an example of the configuration of a heater according to an embodiment. 10A is a diagram illustrating an example of a substrate support part according to an embodiment; FIG. 10B is a diagram illustrating an example of a substrate support part according to an embodiment; FIG. 10C is a diagram illustrating an example of a substrate support part according to an embodiment; and FIG. 10D is a diagram illustrating an example of a substrate support part according to an embodiment.

[0008] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the plasma processing apparatus disclosed in the present application will be described in detail below with reference to the accompanying drawings. However, the disclosed plasma processing apparatus is not limited to the present embodiments.

[0009] In plasma processes such as plasma etching and film deposition, the processing conditions change depending on the temperature of the substrate. Therefore, in plasma processing apparatuses, the substrate mounting surface is divided into multiple zones, and a substrate support table with temperature control for each zone is used. Each zone of such a substrate support table is provided with a heater. In plasma processing apparatuses, the temperature of each zone is controlled by supplying power to the heater in each zone of the substrate support table to generate heat.

[0010] The thermal resistance of the substrate support table varies from zone to zone due to the influence of the structure, etc. This narrows the controllable temperature range when the temperature of each zone of the substrate support table is controlled to the same temperature.

[0011] Therefore, there is a need for a technology that can widen the controllable temperature range when controlling the temperature of each zone to the same temperature.

[0012] [Embodiment] [Apparatus Configuration] An example of a plasma processing apparatus according to the present disclosure will be described. In the embodiment described below, a case where the plasma processing apparatus according to the present disclosure is used as a plasma processing system having a system configuration will be described as an example.

[0013] An example of the configuration of a plasma processing system will be described below: Fig. 1 is a diagram for explaining an example of the configuration of a capacitively coupled plasma processing apparatus.

[0014] The plasma processing system includes a capacitively coupled plasma processing apparatus 1 and a controller 2. The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply 20, a power supply 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support 11 and a gas inlet. The gas inlet is configured to introduce at least one process gas into the plasma processing chamber 10. The gas inlet includes a showerhead 13. The substrate support 11 is disposed within the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support 11. In one embodiment, the showerhead 13 forms at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, a sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 has at least one gas inlet for supplying at least one processing gas to the plasma processing space 10s and at least one gas outlet for exhausting gas from the plasma processing space 10s. The plasma processing chamber 10 is grounded. The showerhead 13 and the substrate support 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0015] The substrate support 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region 111a for supporting a substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a plan view. The substrate W is disposed on the central region 111a of the main body 111, and the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also called a substrate support surface for supporting the substrate W, and the annular region 111b is also called a ring support surface for supporting the ring assembly 112.

[0016] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 1111b disposed within the ceramic member 1111a. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Note that the annular region 111b may also be provided by another member surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 1111 and the annular insulating member. Furthermore, at least one RF / DC electrode coupled to an RF (Radio Frequency) power supply 31 and / or a DC (Direct Current) power supply 32 (described later) may be disposed within the ceramic member 1111a. In this case, the at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or a DC signal (described later) is supplied to the at least one RF / DC electrode, the RF / DC electrode is also called a bias electrode. Note that the conductive member of the base 1110 and the at least one RF / DC electrode may function as multiple lower electrodes. Furthermore, the electrostatic electrode 1111b may function as a lower electrode. Therefore, the substrate support 11 includes at least one lower electrode.

[0017] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive or insulating material, and the cover rings are formed of an insulating material.

[0018] The substrate support 11 may also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow path 1110a, or a combination thereof. A heat transfer fluid such as brine or gas flows through the flow path 1110a. In one embodiment, the flow path 1110a is formed in the base 1110, and one or more heaters are disposed in the ceramic member 1111a of the electrostatic chuck 1111. The substrate support 11 may also include a heat transfer gas supply unit configured to supply a heat transfer gas to the gap between the back surface of the substrate W and the central region 111a. When a heat transfer gas is supplied to the gap between the back surface of the substrate W and the central region 111a, the substrate support 11 is provided with a gas flow path for the heat transfer gas. The substrate support 11 is also provided with through holes (not shown) to accommodate lifter pins that move up and down when transferring the substrate W. In the embodiment, the substrate support portion 11 or the main body portion 111 corresponds to the substrate support table of the present disclosure. Also, in the embodiment, the central region 111a corresponds to the mounting surface of the present disclosure.

[0019] Here, the configuration of the electrostatic chuck 1111 of the substrate support portion 11 will be described. Fig. 2 is a plan view showing an example of the configuration of the electrostatic chuck 1111 according to an embodiment. Fig. 3 is a cross-sectional view showing an example of the configuration of the electrostatic chuck 1111 according to an embodiment.

[0020] 2 shows a plan view of the upper surface of the electrostatic chuck 1111. The upper surface of the electrostatic chuck 1111 is divided into a central region 111a and an annular region 111b. The central region 111a is a region that is approximately circular in plan view. A substrate W is placed on the upper surface of the central region 111a. The diameter of the central region 111a is approximately the same as that of the substrate W or is slightly smaller than the diameter of the substrate W. The annular region 111b is a region that surrounds the central region 111a and extends in a substantially annular shape. In one embodiment, the upper surface of the annular region 111b is located at a lower position than the upper surface of the central region 111a.

[0021] The central region 111a is divided into multiple zones Z1, Z2-1, Z2-1, Z3-1 to Z3-4, and Z4-1 to Z4-8. Hereinafter, the zones Z1, Z2-1, Z2-1, Z3-1 to Z3-4, and Z4-1 to Z4-8 may be collectively referred to as "zone Z." Each zone Z is a divided region obtained by dividing the central region 111a and constitutes a part of the central region 111a. For example, as shown in FIG. 2, the central region 111a is divided into a circular zone Z1 at its center. The circular zone Z1 is further divided into multiple concentric annular regions, and each of the multiple annular regions is divided circumferentially into a plurality of arc-shaped zones Z2-1, Z2-1, Z3-1 to Z3-4, and Z4-1 to Z4-8. The arc-shaped zones Z2-1, Z2-1, Z3-1 to Z3-4, and Z4-1 to Z4-8 are divided into zones with smaller angular widths closer to the periphery. Note that the division method of the zones Z shown in FIG. 2 is an example and is not limited to this. For example, the central region 111a may be divided so that the radial width of the arc-shaped zones Z narrows closer to the periphery. Furthermore, the central region 111a may be divided into zones Z, each concentric with the center at a fixed angle. Furthermore, the central region 111a may be divided into zones Z in a lattice pattern. Furthermore, to finely control the temperature distribution in the central region 111a, the central region 111a may be divided into more zones Z. For example, the central region 111a may be divided into 100 or more zones Z. Furthermore, although the division method of the zones Z shown in FIG. 2 illustrates a case in which the annular region 111b is not divided, this is not limiting. The annular region 111b may also be divided into multiple zones Z. For example, the annular region 111b may be divided into a plurality of arc-shaped zones Z in the circumferential direction.

[0022] The electrostatic chuck 1111 is provided with a heater HT in each zone Z. Fig. 3 shows a schematic partial cross section of two zones Z of the electrostatic chuck 1111. An electrostatic electrode 1111b is disposed within the ceramic member 1111a. Also, a heater HT and a temperature sensor TS are disposed within the ceramic member 1111a for each zone Z. The heater HT generates heat when power is supplied to heat the zone Z.

[0023] Returning to Fig. 1, each heater HT is connected to a heater power supply 60. Each temperature sensor TS is connected to a temperature detection unit 61. Note that Fig. 1 omits some of the wiring connecting each heater HT to the heater power supply 60 and each temperature sensor TS to the temperature detection unit 61.

[0024] The heater power supply 60 supplies power to each heater HT. The heater power supply 60 is capable of individually adjusting the power supplied to each heater HT. For example, the heater power supply 60 performs PWM (Pulse Width Modulation) control of the power supplied to each heater HT. PWM control controls the output power by periodically switching the heater on and off within one cycle. The heater power supply 60 controls the power supplied to each heater HT by changing the proportion of the on period (duty ratio) within one cycle. The heater power supply 60 adjusts the power supplied to each heater HT based on a control signal input from the control unit 2. Each heater HT generates heat using the power supplied from the heater power supply 60 and heats its respective zone Z.

[0025] The temperature detection unit 61 measures the resistance value of each temperature sensor TS, and detects the temperature of each zone Z in which each temperature sensor TS is arranged based on the measured resistance value.

[0026] The temperature sensors TS may be made of a material whose resistance changes with temperature. For example, the temperature sensors TS may be thermistors. Alternatively, the temperature sensors TS may be thin films made of any of the following materials: tungsten, nickel, molybdenum, copper, silver, platinum, and aluminum. The temperature detection unit 61 may measure the current and voltage of the power supplied to each temperature sensor TS, calculate the resistance of each temperature sensor TS from the measured current and voltage, and detect the temperature of each zone Z based on the calculated resistance.

[0027] As a result, the heat generated by each heater HT of the electrostatic chuck 1111 is individually controlled based on the temperature detected by each temperature sensor TS, and the temperatures of multiple zones Z within the central region 111a are individually adjusted.

[0028] The showerhead 13 is configured to introduce at least one process gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c. The process gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c. The showerhead 13 also includes at least one upper electrode. In addition to the showerhead 13, the gas inlet may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 10a.

[0029] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from a corresponding gas source 21 to the showerhead 13 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply unit 20 may include one or more flow modulation devices to modulate or pulse the flow rate of the at least one process gas.

[0030] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This generates a plasma from at least one process gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of a plasma generating unit configured to generate a plasma from one or more process gases in the plasma processing chamber 10. Furthermore, by supplying a bias RF signal to the at least one lower electrode, a bias potential is generated on the substrate W, thereby attracting ion components in the formed plasma to the substrate W.

[0031] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0032] The second RF generator 31b is coupled to at least one lower electrode via at least one impedance matching circuit and is configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generator 31b may be configured to generate multiple bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0033] The power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generator 32a and a second DC generator 32b. In one embodiment, the first DC generator 32a is connected to the at least one lower electrode and configured to generate a first DC signal. The generated first bias DC signal is applied to the at least one lower electrode. In one embodiment, the second DC generator 32b is connected to the at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to the at least one upper electrode.

[0034] In various embodiments, at least one of the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a rectangular, trapezoidal, triangular, or combination thereof pulse waveform. In one embodiment, a waveform generator for generating the sequence of voltage pulses from the DC signal is connected between the first DC generator 32a and at least one lower electrode. Thus, the first DC generator 32a and the waveform generator constitute a voltage pulse generator. When the second DC generator 32b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulses may have either positive or negative polarity. Furthermore, the sequence of voltage pulses may include one or more positive voltage pulses and one or more negative voltage pulses within one period. The first and second DC generating units 32a and 32b may be provided in addition to the RF power supply 31, or the first DC generating unit 32a may be provided instead of the second RF generating unit 31b.

[0035] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is regulated by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0036] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform various processes described in this disclosure. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 may be implemented by, for example, a computer 2a. The processing unit 2a1 may be configured to read a program from the storage unit 2a2 and execute the read program to perform various control operations. This program may be stored in the storage unit 2a2 in advance or may be acquired via a medium when needed. The acquired program is stored in the storage unit 2a2 and read from the storage unit 2a2 by the processing unit 2a1 for execution. The medium may be various storage media readable by the computer 2a or a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include a random access memory (RAM), a read-only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN).

[0037] The substrate support 11 has variations in thermal resistance for each zone Z due to factors such as its structure. For example, the substrate support 11 has variations in thermal resistance for each zone Z due to factors such as the gas flow path, the through holes that accommodate the lifter pins, and internal structures. Furthermore, for example, the temperature of each zone Z of the substrate support 11 is controlled by heat removal by the heat transfer fluid flowing through the flow path 1110a and heat input by the heater HT. The amount of heat removed by the heat transfer fluid varies for each zone Z of the substrate support 11 depending on the position of the flow path 1110a. Therefore, the substrate support 11 has variations in thermal resistance for each zone Z. As a result, even if the heat input from the heater HT for each zone Z is uniform, the substrate support 11 has uneven thermal resistance, resulting in uneven temperatures.

[0038] Here, an example of the thermal resistance and the amount of heat generated will be briefly described using two zones A and B among the zones Z of the substrate support part 11 as an example. Fig. 4 is a diagram illustrating the thermal resistance and the amount of heat generated of the two zones A and B of the substrate support part 11. The two zones A and B may be zones Z arranged at positions on the same diameter from the center of the electrostatic chuck 1111, or may be zones Z arranged at positions on different diameters from the center of the electrostatic chuck 1111. Furthermore, the two zones A and B may be zones Z arranged adjacent to each other, or may be zones Z arranged not adjacent to each other.

[0039] The upper part of Figure 4 shows a schematic diagram of an electric circuit for supplying power to the heaters HT in zones A and B. In zone A, the heater HT is connected to a resistor R １ In zone B, the heater HT is shown as a heater resistor 150a with a resistance value R ２The heater resistor 150a is connected to a power supply line 152 via a switch 151a. The heater resistor 150b is connected to the power supply line 152 via a switch 151b. A voltage V is applied to the power supply line 152. The switches 151a and 151b are turned on and off by PWM-controlled control signals. The control unit 2 sends control signals to the switches 151a and 151b. The control unit 2 controls the duty ratio of the control signals supplied to the switches 151a and 151b according to the set temperatures of zones A and B. When the switches 151a and 151b are turned on, the heater resistors 150a and 150b are supplied with power of voltage V and generate heat. The heat generation amount Q of the heater HT in zone A ＨＴＲ１ The heat generation amount Q of the heater HT in zone B can be expressed as the following formula (1-1). ＨＴＲ２ can be expressed as the following equation (1-2).

[0040] Q ＨＴＲ１ = V ２ / R １ ×DuTy １ (1-1) Q ＨＴＲ２ = V ２ / R ２ ×DuTy ２ (1-2)

[0041] where DuTy １ is the duty ratio at which the switch 151a is turned on and off. ２ is the duty ratio at which the switch 151b is turned on and off.

[0042] Heat generation amount Q of heater HT in zones A and B ＨＴＲ１ , Q ＨＴＲ２ is DuTy １ , DuTy ２ The larger the is, the larger it becomes.

[0043] The lower part of Fig. 4 shows a schematic diagram of a thermal circuit indicating the flow of heat in zones A and B of the substrate support 11. The temperatures of zones A and B are controlled by the heat transfer fluid flowing through the flow path 1110a and the heat input due to the heat generated by the heater HT. In Fig. 4, the resistance of heat transfer in zone A is represented by thermal resistance R ＨＴ１The resistance of heat to the zone B is expressed as the thermal resistance R ＨＴ２ The thermal circuit of Zone A has a heat generation amount Q ＨＴＲ１ The heat source 160a has a thermal resistance R ＨＴ１ The thermal circuit of zone B can be shown as a circuit in which resistors 161a are connected in series. ＨＴＲ２ The heat source 160b has a thermal resistance R ＨＴ２ The temperature of zones A and B can be calculated by the heat transfer fluid temperature flowing through the flow path 1110a, and the heat generation amount Q of the heater HT. ＨＴＲ１、 Q ＨＴＲ２ The temperature difference ΔT1 between the heat transfer fluid in zone A and the heat generation amount Q ＨＴＲ１ The temperature difference ΔT2 between the heat transfer fluid in zone B and the heat generation amount Q ＨＴＲ２ The larger the is, the larger it becomes.

[0044] Thermal resistance R of zones A and B ＨＴ１ , R ＨＴ２ varies due to the influence of the structure of the substrate support portion 11, etc. Therefore, in zones A and B, even if the heat input from the heater HT is uniform, the thermal resistance R ＨＴ１ , R ＨＴ２ This causes variations in temperature, resulting in uneven distribution of the temperature.

[0045] For example, the substrate support 11 is fabricated so that the resistance value of the heater HT in each zone Z is the same. For example, in zones A and B, the resistance value R １ and resistance value R ２ The heater resistors 150a and 150b are fabricated so that

[0046] Here, as a comparative example, the resistance value R １ and resistance value R ２ 5A is a diagram illustrating an example of temperature control in a comparative example. １ , DuTy ２ For example, the substrate support 11 is designed so that the resistance values ​​of the heaters HT in each zone Z are the same. For example, in zones A and B, the resistance values ​​R １ and resistance value R ２However, in zones A and B, the heater resistors 150a and 150b are fabricated so that the thermal resistance R ＨＴ１ , R ＨＴ２ In FIG. 5A, the thermal resistance R of zone A is not equal to ＨＴ１ is the thermal resistance R of zone B ＨＴ２ is smaller than (thermal resistance R ＨＴ１ <Thermal resistance R ＨＴ２ Here, the heaters HT in zones A and B are set to the same duty ratio (DuTy １ =DuTy ２ ) to supply power and generate heat Q ＨＴＲ１ , Q ＨＴＲ２ When these are equal, the thermal resistance R ＨＴ１ <Thermal resistance R ＨＴ２ Therefore, the temperature difference ΔT1<the temperature difference ΔT2.

[0047] In this way, zones A and B are １ and DuTy ２ The heat generation amount Q of the heater HT is the same. ＨＴＲ１ , Q ＨＴＲ２ When the thermal resistance R ＨＴ１ <Thermal resistance R ＨＴ２ Therefore, the temperature difference ΔT1<the temperature difference ΔT2.

[0048] To make the temperature difference ΔT1 and the temperature difference ΔT2 equal, DuTy １ , DuTy ２ 5B is a diagram illustrating an example of temperature control in a comparative example. FIG. 5B shows how DuTy is changed so that the temperature difference ΔT1 and the temperature difference ΔT2 are equal. １ , DuTy ２ When the temperature difference ΔT1 and the temperature difference ΔT2 are equal, the thermal resistance R ＨＴ１ <Thermal resistance R ＨＴ２ Therefore, the duty ratio is DuTy １ >DuTy ２ This becomes:

[0049] In this way, the same temperature difference can be obtained in zone A, which has low thermal resistance, by increasing the duty ratio of the power supply compared to zone B, which has high thermal resistance.

[0050] The temperature of the substrate W varies depending on the temperature of each zone Z. For example, when the temperature of the substrate W is to be increased, the duty ratio of the power supplied to the heater HT in each zone Z is increased to increase the amount of heat generated. When the temperature of the substrate W is to be decreased, the duty ratio of the power supplied to the heater HT in each zone Z is decreased to decrease the amount of heat generated.

[0051] 6A is a diagram illustrating an example of increasing the temperature of the substrate W by temperature control in a comparative example. FIG. 6A shows the duty ratio (DuTy) when the temperature differences ΔT1 and ΔT2 in zones A and B are set to 65° C. １ , DuTy ２ ) is shown. The duty ratio is 100% in zone A and 85.4% in zone B. FIG. 6B is a diagram for explaining an example of a case where the temperature of the substrate W is lowered by temperature control in a comparative example. FIG. 6B shows the duty ratio (DuTy) when the temperature differences ΔT1 and ΔT2 in zones A and B are set to 20° C. １ , DuTy ２ The duty cycle ratio is 5.9% in zone A and 3.1% in zone B.

[0052] The duty ratio is the ratio of the on-period during one cycle, and has an upper and lower limit within its settable range. For example, once the duty ratio reaches 100%, it cannot be increased any further. Therefore, once the duty ratio of the power supplied to the heater HT in any one of the zones Z reaches its upper limit, the temperature of the substrate W cannot be increased any further, even if the duty ratios of the other zones Z have not reached their upper limits. For example, in the example of FIG. 6A , the duty ratio of zone A is 100%, so the temperature of the substrate W cannot be increased any further. Furthermore, once the duty ratio of the power supplied to the heater HT in any one of the zones Z reaches its lower limit, the temperature of the substrate W cannot be decreased any further, even if the duty ratios of the other zones Z have not reached their lower limits.

[0053] In this way, when there is variation in the thermal resistance of each zone Z, the controllable temperature range may become narrower when the temperature of each zone Z is controlled to the same temperature.

[0054] Therefore, in the plasma processing apparatus 1 according to this embodiment, the substrate support part 11 may be configured so that the resistance value of the heater HT in the zone Z having low thermal resistance is low and the resistance value of the heater HT in the zone Z having high thermal resistance is high. For example, when manufacturing the substrate support part 11, the heater resistor functioning as the heater HT in the zone Z having low thermal resistance is configured to have a low resistance value. Also, the heater resistor functioning as the heater HT in the zone Z having high thermal resistance is configured to have a high resistance value. For example, the substrate support part 11 is configured so that the ratio of the thermal resistances of the zones Z of the electrostatic chuck 1111 matches the ratio of the resistance values ​​of the heaters HT provided in each zone Z.

[0055] Here, an example of the thermal resistance and the amount of heat generated will be described using the above-mentioned two zones A and B among the zones Z as an example.

[0056] In the plasma processing apparatus 1 according to this embodiment, the thermal resistance R ＨＴ１ is Zone B R ＨＴ２ If it is larger, the resistance value R of the heater HT in zone A １ is the resistance value R of the heater HT in zone B ２ In the plasma processing apparatus 1 according to this embodiment, the thermal resistance R ＨＴ１ is Zone B R ＨＴ２ If it is smaller, the resistance value R of the heater HT in zone A １ is the resistance value R of the heater HT in zone B ２ The substrate support 11 is configured so that the thermal resistance R of the zone A is smaller than the thermal resistance R of the zone B. ＨＴ１ , thermal resistance R of zone B ＨＴ２ , the resistance value R of the heater HT in zone A １ , the resistance value R of the heater HT in zone B ２ The substrate support portion 11 is configured to satisfy the following formula (2).

[0057] R ２ / R １ = R ＨＴ２ / R ＨＴ１ (2)

[0058] An example of temperature control in this embodiment will be described using zones A and B. FIG. 7 is a diagram illustrating an example of temperature control in this embodiment. Zones A and B satisfy the above-mentioned formula (2). In this case, the heaters HT in zones A and B are set to the same duty ratio (DuTy １ =DuTy ２ ), the temperature difference ΔT1 and the temperature difference ΔT2 become equal. １ , DuTy ２ By controlling these in the same way, the temperatures of zones A and B can be controlled to the same temperature. The control unit 2 controls the duty ratio of the pulse power applied to the heaters HT of zones A and B, respectively, in accordance with the resistance ratio of the heater HT of zone B to the resistance of the heater HT of zone A, and the thermal resistance ratio of the thermal resistance of zone B to the thermal resistance of zone A. The control of the duty ratio by the control unit 2 includes cases where the duty ratios of zones A and B are set to different values ​​and cases where they are set to the same value. As a result, the plasma processing apparatus 1 according to the embodiment can control the duty ratio (DuTy １ , DuTy ２ ) can be changed to the upper and lower limits of the settable range. This allows the plasma processing apparatus 1 according to the embodiment to widen the controllable temperature range when controlling the temperatures of the zones Z to the same temperature.

[0059] In the above-described embodiment, an example has been described in which each zone Z is controlled to the same temperature when there is no heat input from the plasma to the substrate support part 11. Even when there is heat input from the plasma to the substrate support part 11, by configuring the substrate support part 11 as in this embodiment, the difference in duty ratio between each zone Z when controlling the temperature of each zone Z to the same temperature can be reduced. This allows the plasma processing apparatus 1 to expand the controllable temperature range when controlling the temperature of each zone Z to the same temperature, even when there is heat input from the plasma to the substrate support part 11.

[0060] Next, an example of a flow of manufacturing the substrate support part 11 according to the embodiment will be described. Figure 8 is an explanatory diagram showing an example of a flow of manufacturing the substrate support part 11 according to the embodiment.

[0061] In step S10, a prototype of the substrate support part 11 is produced based on the design information of the substrate support part 11 without adjusting the resistance value of the heater HT in each zone Z. For example, the substrate support part 11 is produced by setting the resistance value of the heater HT in each zone Z to the same predetermined value.

[0062] In step S11, the substrate support 11 prototyped in step S10 is evaluated. For example, the same power is supplied to the heater HT in each zone Z, and the temperature of each zone Z is measured. For example, as in the case where the substrate support 11 is incorporated into the plasma processing apparatus 1, a heat transfer fluid is passed through the flow path 1110a of the substrate support 11, the same power is supplied to the heater HT in each zone Z, and the temperature of each zone Z is measured. In addition, the duty ratio when power is supplied to the heater HT in each zone Z is recorded. The substrate support 11 has variations in thermal resistance for each zone Z due to the influence of its structure, etc. Therefore, the temperature of each zone Z changes in accordance with the thermal resistance of the respective zone Z.

[0063] In step S12, the thermal resistance of each zone Z of the prototype substrate support part 11 is calculated. For example, the temperature difference ΔT between each zone Z and the heat transfer fluid is calculated from the temperature of each zone Z. Also, the heat generation amount Q of the heater HT of each zone Z is calculated from the duty ratio when power is supplied to the heater HT of each zone Z using equations (1-1) and (1-2), etc. ＨＴＲ Then, calculate the temperature difference ΔT and heat generation amount Q of each zone Z. ＨＴＲ From the above, the thermal resistance R of each zone Z is calculated by the following equation (3). ＨＴ Calculate.

[0064] R ＨＴ = ΔT / Q ＨＴＲ (3)

[0065] In step S13, the design information of the substrate support part 11 is updated so that the resistance value of the heater HT in the zone Z with low thermal resistance is reduced and the resistance value of the heater HT in the zone Z with high thermal resistance is increased according to the thermal resistance of each zone Z. For example, the resistance value of the heater HT in each zone Z is calculated so that the ratio of the thermal resistances of the electrostatic chuck 1111 in each zone Z matches the ratio of the resistance values ​​of the heater HT in each zone Z. Then, the resistance value of the heater HT in each zone Z in the design information of the substrate support part 11 is updated to the calculated resistance value.

[0066] In step S14, the substrate support part 11 is manufactured based on the updated design information of the substrate support part 11. The manufactured substrate support part 11 is configured so that the resistance value of the heater HT in the zone Z with low thermal resistance is small and the resistance value of the heater HT in the zone Z with high thermal resistance is large.

[0067] 8 has been described as an example in which the substrate support part 11 is fabricated as a prototype and the thermal resistance of each zone Z of the substrate support part 11 is calculated. However, the flow of manufacturing the substrate support part 11 is not limited to this. For example, the thermal resistance of each zone Z of the substrate support part 11 may be theoretically calculated from the design information of the substrate support part 11.

[0068] Next, an example of changing the resistance value of the heater HT will be described. The heater HT in each zone Z is configured in a film or wire form. For example, the heater HT in each zone Z is configured using meander wiring or multilayer wiring. The heaters HT in each zone Z may all have the same configuration, or some may have different configurations. For example, the heaters HT in each zone Z may have different configurations depending on their positions in the zone Z. FIGS. 9A to 9G are diagrams showing an example of the configuration of a heater HT according to an embodiment. FIG. 9A shows a heater HT configured using meander wiring. FIG. 9B shows a heater HT configured using different conductive materials for the meander wiring. The resistance value of the heater HT increases when the wiring material is changed to a material with low conductivity, and decreases when the wiring material is changed to a material with high conductivity. FIG. 9C shows a heater HT configured using a thicker meander wiring. FIG. 9D shows a heater HT configured using a wider meander wiring. The resistance value of the heater HT decreases when the wiring thickness or width is increased, since the cross section of the wiring increases. FIG. 9E shows the case where the meander wiring length is increased. FIG. 9F shows the case where the meander wiring is connected in two layers in series and the length is increased. The resistance value of the heater HT increases when the wiring length is increased, and decreases when the wiring length is decreased. FIG. 9G shows the case where the meander wiring is connected in two layers in parallel. The resistance value of the heater HT decreases when the meander wiring is connected in two layers in parallel.

[0069] Next, an example of the substrate support part 11 according to the embodiment will be described. Figures 10A to 10D are diagrams showing an example of the substrate support part 11 according to the embodiment. In Figures 10A to 10D, the central region 111a is divided into a plurality of zones Z1, Z2-1, Z2-1, Z3-1 to Z3-4, and Z4-1 to Z4-8.

[0070] 10A shows a case where the thermal resistances of zones Z3-3 and Z4-2, which are not adjacent to each other, are different. The zones Z3-3 and Z4-2 are located at different radial positions from the center of the electrostatic chuck 1111. In FIG. 10A, the thermal resistance of zone Z3-3 is R ＨＴ１ The resistance value of the heater HT is R １For the zone Z4-2, the thermal resistance is R ＨＴ２ and the resistance value R ２ In FIG. 10A, the thermal resistance is R ＨＴ１ >R ＨＴ２ The thermal resistance R of the zone Z3-3 ＨＴ１ and the resistance value R of the heater HT １ and the thermal resistance R of zone Z4-2 ＨＴ２ and the resistance value R of the heater HT ２ satisfies the above-mentioned formula (2). Therefore, in Fig. 10A, when the temperatures of zones Z3-3 and Z4-2 are controlled to be the same temperature, the controllable temperature range can be widened.

[0071] 10B shows a case where the thermal resistance of some zones Z is different. For example, the substrate support part 11 shown in FIG. 10B may have many terminals and through holes in the outer peripheral zones Z4-5 and Z4-6, and the thermal resistance may be larger than that of the other zones Z. In FIG. 10B, the thermal resistance of the zones Z4-5 and Z4-6 is calculated as R ＨＴ１ The resistance value of the heater HT is R １ For the remaining zone Z, the thermal resistance is shown as R ＨＴ２ and the resistance value R ２ The thermal resistance R of zones Z4-5 and Z4-6 is shown as ＨＴ１ and the resistance value R of the heater HT １ and the thermal resistance R of other zones Z ＨＴ２ and the resistance value R of the heater HT ２ satisfies the above-mentioned formula (2). Therefore, in Fig. 10B, the temperature range in which the temperatures of the zones Z can be controlled to the same temperature can be widened.

[0072] 10C shows a case where the thermal resistance of each zone Z from the center is different. In FIG. 10C, the thermal resistance of zone Z1 is R ＨＴ１ The resistance value of the heater HT is R １ In addition, the thermal resistance of the concentric zones Z2-1 and Z2-2 is shown as R ＨＴ２ The resistance value of the heater HT is R ２ In addition, the thermal resistance of the concentric zones Z3-1 to Z3-4 is shown as R ＨＴ３ The resistance value of the heater HT is R３ In addition, the thermal resistance of the concentric zones Z4-1 to Z4-8 is shown as R ＨＴ４ The resistance value of the heater HT is R ４ In FIG. 10C, the thermal resistance is shown as R ＨＴ１ <R ＨＴ２ <R ＨＴ３ <R ＨＴ４ The thermal resistance R of zone Z1 ＨＴ１ and the resistance value R of the heater HT １ When the thermal resistance R ＨＴ２ , R ＨＴ３ , R ＨＴ４ and the resistance value R of the heater HT ２ , R3, R ４ satisfies the above-mentioned formula (2). Therefore, in Fig. 10C, when the temperatures of the zones Z are controlled to the same temperature, the controllable temperature range can be widened.

[0073] 10D shows a case where the thermal resistances of zones Z3-1 to Z3-4, which are arranged at the same radial position from the center, are different. In FIG. 10D, the thermal resistance of zone Z3-1 is R ＨＴ１ The resistance value of the heater HT is R １ For the zone Z3-2, the thermal resistance is R ＨＴ２ The resistance value of the heater HT is R ２ For the zone Z3-3, the thermal resistance is R ＨＴ３ The resistance value of the heater HT is R ３ For the zone Z3-4, the thermal resistance is R ＨＴ４ The resistance value of the heater HT is R ４ The thermal resistance R of the zone Z3-1 is ＨＴ１ and the resistance value R of the heater HT １ When the thermal resistance R ＨＴ２ , R ＨＴ３ , R ＨＴ４ and the resistance value R of the heater HT ２ , R ３ , R ４ satisfies the above-mentioned formula (2). Therefore, in Fig. 10D, the temperature range in which the temperatures of zones Z3-1 to Z3-4 can be controlled to the same temperature can be widened.

[0074] As described above, the plasma processing apparatus 1 according to the embodiment includes the plasma processing chamber 10, the substrate support 11, and the controller 2. The substrate support 11 is disposed within the plasma processing chamber 10 and includes a base 1110 and an electrostatic chuck 1111 disposed on the base 1110. The electrostatic chuck 1111 has a zone A and a zone B different from zone A, with a heater HT disposed within zone A and a heater HT disposed within zone B. The controller 2 is configured to control the duty ratio of the pulse power applied to the heater HT in zone A and the pulse power applied to the heater HT in zone B in accordance with the ratio of the resistance of the heater HT in zone B to the resistance of the heater HT in zone A and the ratio of the thermal resistance of the substrate support 11 corresponding to zone B to the thermal resistance of the substrate support 11 corresponding to zone A. This allows the plasma processing apparatus 1 to expand the controllable temperature range when controlling the temperatures of zones A and B to the same temperature.

[0075] Furthermore, the electrostatic chuck 1111 has a central region 111a on which the substrate W is placed, which is divided into a plurality of zones Z including a zone A and a zone B. The substrate support part 11 is configured such that a plurality of heaters HT, including a heater HT in zone A and a heater HT in zone B, are provided in each zone Z, and the resistance value of the heater HT increases in a zone Z having a larger thermal resistance. This allows the plasma processing apparatus 1 to widen the controllable temperature range when controlling the temperature of each zone Z to the same temperature.

[0076] Furthermore, the substrate support 11 is configured so that the ratio of the thermal resistances of the zones Z matches the ratio of the resistance values ​​of the heaters HT provided in the zones Z. This allows the plasma processing apparatus 1 to widen the controllable temperature range when controlling the temperatures of the zones Z to the same temperature.

[0077] Furthermore, the substrate support part 11 is configured so that when the thermal resistance of zone A is greater than the thermal resistance of zone B, the resistance value of the heater HT in zone A is greater than the resistance value of the heater HT in zone B, and when the thermal resistance of zone A is less than the thermal resistance of zone B, the resistance value of the heater HT in zone A is less than the resistance value of the heater HT in zone B. This allows the plasma processing apparatus 1 to expand the temperature range that can be set when controlling zones A and B to the same set temperature.

[0078] The substrate support 11 also reduces the thermal resistance of the zone A to R ＨＴ１ and the thermal resistance of zone B is R ＨＴ２ The resistance value of the heater HT in zone A is R １ and the resistance value of the heater HT in zone B is R ２ , the plasma processing apparatus 1 is configured to satisfy the above-mentioned formula (2). This allows the plasma processing apparatus 1 to widen the controllable temperature range when controlling the temperatures of zones A and B to the same temperature.

[0079] Furthermore, zone A (e.g., zone Z3-3 in FIG. 10A) and zone B (e.g., zone Z4-2 in FIG. 10A) are disposed at positions on different diameters from the center of electrostatic chuck 1111. This allows plasma processing apparatus 1 to expand the controllable temperature range when controlling the temperatures of zones A and B, which are disposed at positions on different diameters from the center of electrostatic chuck 1111, to the same temperature.

[0080] Furthermore, zone A (e.g., zone Z3-1 in FIG. 10D) and zone B (e.g., zone Z3-3 in FIG. 10D) are arranged at positions on the same diameter from the center of electrostatic chuck 1111. This allows plasma processing apparatus 1 to expand the controllable temperature range when controlling the temperatures of zones A and B, which are arranged at positions on the same diameter from the center of electrostatic chuck 1111, to the same temperature.

[0081] Furthermore, zone A (e.g., zone Z3-1 in FIG. 10D) and zone B (e.g., zone Z3-2 in FIG. 10D) are arranged adjacent to each other, which allows the plasma processing apparatus 1 to widen the controllable temperature range when controlling the temperatures of adjacent zones A and B to the same temperature.

[0082] Furthermore, zone A (e.g., zone Z3-3 in FIG. 10A) and zone B (e.g., zone Z4-2 in FIG. 10A) are not adjacent to each other, which allows the plasma processing apparatus 1 to widen the controllable temperature range when controlling the temperatures of zones A and B, which are not adjacent to each other, to the same temperature.

[0083] The electrostatic chuck 1111 also has a third zone (e.g., zone Z3-3 or zone Z3-4 in FIG. 10D ) different from zone A (e.g., zone Z3-1 in FIG. 10D ) and zone B (e.g., zone Z3-2 in FIG. 10D ). A heater HT is disposed in the third zone. The substrate support 11 is configured such that, when the thermal resistance of zone A is greater than the thermal resistance of the third zone, the resistance of the heater HT in zone A is greater than the resistance of the heater HT in the third zone, and, when the thermal resistance of zone A is smaller than the thermal resistance of the third zone, the resistance of the heater HT in zone A is smaller than the resistance of the heater HT in the third zone. This allows the plasma processing apparatus 1 to expand the controllable temperature range when controlling the temperatures of zones A, B, and the third zone to the same temperature.

[0084] Although the embodiments have been described above, the disclosed embodiments should be considered to be illustrative in all respects and not restrictive. Indeed, the above-described embodiments may be embodied in various forms. Furthermore, the above-described embodiments may be omitted, substituted, or modified in various forms without departing from the scope and spirit of the claims.

[0085] For example, in the above embodiment, the plasma processing is performed on a semiconductor wafer as the substrate W, but the present invention is not limited to this.

[0086] In the above embodiment, a plasma processing system for performing a plasma etching process has been described as an example. However, the present invention is not limited to this. Any device may be used as long as the heater HT is provided for each zone Z obtained by dividing the mounting surface 114 of the electrostatic chuck 1111 and the device performs plasma processing. For example, the plasma processing device may be a film forming device that generates plasma and forms a film.

[0087] It should be noted that the disclosed embodiments are illustrative in all respects and should not be considered limiting. Indeed, the above-described embodiments may be embodied in various forms. Furthermore, the above-described embodiments may be omitted, substituted, or modified in various forms without departing from the scope and spirit of the appended claims.

[0088] In addition, the following supplementary notes are disclosed regarding the above-described embodiment.

[0089] (Supplementary Note 1) A plasma processing apparatus comprising: a plasma processing chamber; a substrate support table disposed within the plasma processing chamber, the substrate support table including a base and an electrostatic chuck disposed on the base; and a control unit, wherein the electrostatic chuck has a first zone and a second zone different from the first zone, a first heater is disposed within the first zone, and a second heater is disposed within the second zone, and the control unit is configured to control a duty ratio of pulse power applied to the first heater and pulse power applied to the second heater in accordance with a resistance ratio of a resistance value of the second heater to a resistance value of the first heater and a thermal resistance ratio of a thermal resistance of the substrate support table corresponding to the second zone to a thermal resistance of the substrate support table corresponding to the first zone.

[0090] (Supplementary Note 2) The plasma processing apparatus according to Supplementary Note 1, wherein the electrostatic chuck has a mounting surface on which a substrate is placed divided into a plurality of zones including the first zone and the second zone, and the substrate support table is configured such that a plurality of heaters including the first heater and the second heater are provided in each zone, and the resistance value of the heater increases in the zone having a larger thermal resistance.

[0091] (Supplementary Note 3) The plasma processing apparatus according to Supplementary Note 2, wherein the substrate support table is configured so that a ratio of thermal resistances of the respective zones matches a ratio of resistance values ​​of the heaters provided in the respective zones.

[0092] (Appendix 4) The plasma processing apparatus described in Appendix 1, wherein the substrate support table is configured such that when the thermal resistance of the first zone is greater than the thermal resistance of the second zone, the resistance value of the first heater is greater than the resistance value of the second heater, and when the thermal resistance of the first zone is less than the thermal resistance of the second zone, the resistance value of the first heater is less than the resistance value of the second heater.

[0093] (Supplementary Note 5) The substrate support base has a thermal resistance of the first zone R ＨＴ１ and the thermal resistance of the second zone is R ＨＴ２ and the resistance value of the first heater is R １ and the resistance value of the second heater is R ２ 5. The plasma processing apparatus according to claim 4, configured to satisfy the above-mentioned formula (2) when

[0094] (Supplementary Note 6) The plasma processing apparatus according to any one of Supplementary Notes 1 to 5, wherein the first zone and the second zone are disposed at positions with different diameters from the center of the electrostatic chuck.

[0095] (Supplementary Note 7) The plasma processing apparatus according to any one of Supplementary Notes 1 to 5, wherein the first zone and the second zone are disposed at positions having the same diameter from the center of the electrostatic chuck.

[0096] (Supplementary Note 8) The plasma processing apparatus according to any one of Supplementary Notes 1 to 7, wherein the first zone and the second zone are disposed adjacent to each other.

[0097] (Supplementary Note 9) The plasma processing apparatus according to any one of Supplementary Notes 1 to 7, wherein the first zone and the second zone are arranged so as not to be adjacent to each other.

[0098] (Supplementary Note 10) The plasma processing apparatus according to Supplementary Note 4 or 5, wherein the electrostatic chuck has a third zone different from the first zone and the second zone, a third heater is disposed within the third zone, and the substrate support table is configured such that when the thermal resistance of the first zone is greater than the thermal resistance of the third zone, the resistance value of the first heater is greater than the resistance value of the third heater, and when the thermal resistance of the first zone is less than the thermal resistance of the third zone, the resistance value of the first heater is less than the resistance value of the third heater.

[0099] (Supplementary Note 11) The plasma processing apparatus according to any one of Supplementary Notes 1 to 10, wherein at least one of the first heater and the second heater is configured in a film shape or a wire shape.

[0100] (Supplementary Note 12) The plasma processing apparatus according to Supplementary Note 11, wherein at least one of the first heater and the second heater is configured by meander wiring or multilayer wiring.

[0101] REFERENCE SIGNS LIST 1 Plasma processing apparatus 2 Control unit 10 Plasma processing chamber 11 Substrate support 111 Main body 111a Central region 111b Annular region 112 Ring assembly 114 Mounting surface 150a Heater resistor 150b Heater resistor 151a Switch 151b Switch 152 Power supply line 160a Heat source 160b Heat source 161a Resistor 161b Resistor 1110 Base 1110a Flow path 1111 Electrostatic chuck 1111a Ceramic member 1111b Electrostatic electrode HT Heater TS Temperature sensor W Substrate Z, Z1, Z2-1, Z2-2, Z3-1 to Z3-4, Z4-1 to Z4-8 Zones

Claims

1. A plasma processing apparatus comprising: a plasma processing chamber; a substrate support stage disposed within the plasma processing chamber, the substrate support stage including a base and an electrostatic chuck disposed on the base; and a control unit, wherein the electrostatic chuck has a first zone and a second zone different from the first zone, a first heater is disposed within the first zone, and a second heater is disposed within the second zone, and the control unit is configured to control a duty ratio of a pulse power applied to the first heater and a pulse power applied to the second heater in accordance with a resistance ratio of a resistance value of the second heater to a resistance value of the first heater and a thermal resistance ratio of a thermal resistance of the substrate support stage corresponding to the second zone to a thermal resistance of the substrate support stage corresponding to the first zone.

2. The plasma processing apparatus according to claim 1, wherein the electrostatic chuck has a mounting surface on which a substrate is placed that is divided into a plurality of zones including the first zone and the second zone, and the substrate support table is configured such that a plurality of heaters including the first heater and the second heater are provided individually in each zone, and the resistance value of the heater is greater in the zone having a greater thermal resistance.

3. The plasma processing apparatus according to claim 2, wherein the substrate support stage is configured so that the ratio of thermal resistances of the respective zones matches the ratio of resistance values ​​of the heaters provided in the respective zones.

4. The plasma processing apparatus of claim 1, wherein the substrate support table is configured such that when the thermal resistance of the first zone is greater than the thermal resistance of the second zone, the resistance value of the first heater is greater than the resistance value of the second heater, and when the thermal resistance of the first zone is less than the thermal resistance of the second zone, the resistance value of the first heater is less than the resistance value of the second heater.

5. The substrate support base has a thermal resistance of the first zone R ＨＴ１ and the thermal resistance of the second zone is R ＨＴ２ The resistance value of the first heater is R １ and the resistance value of the second heater is R ２ The plasma processing apparatus according to claim 4 , wherein the plasma processing apparatus is configured to satisfy the following formula (1) when R ２ / R １ = R ＨＴ２ / R ＨＴ１ (1) 6. The plasma processing apparatus according to claim 1, wherein the first zone and the second zone are disposed at different radial positions from the center of the electrostatic chuck.

7. The plasma processing apparatus according to claim 1, wherein the first zone and the second zone are disposed at positions spaced apart from each other by the same diameter from the center of the electrostatic chuck.

8. The plasma processing apparatus according to claim 1, wherein the first zone and the second zone are disposed adjacent to each other.

9. The plasma processing apparatus according to claim 1, wherein the first zone and the second zone are arranged so as not to be adjacent to each other.

10. The plasma processing apparatus of claim 4, wherein the electrostatic chuck has a third zone different from the first zone and the second zone, a third heater is disposed within the third zone, and the substrate support table is configured such that when the thermal resistance of the first zone is greater than the thermal resistance of the third zone, the resistance value of the first heater is greater than the resistance value of the third heater, and when the thermal resistance of the first zone is less than the thermal resistance of the third zone, the resistance value of the first heater is less than the resistance value of the third heater.

11. The plasma processing apparatus according to claim 1, wherein at least one of the first heater and the second heater is configured in a film shape or a wiring shape.

12. The plasma processing apparatus according to claim 11, wherein at least one of the first heater and the second heater is configured with meander wiring or multi-layer wiring.

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