System for fixing semiconductor wafer to electrostatic chuck and method for fixing semiconductor wafer to electrostatic chuck using same

Abstract

A system for fixing a semiconductor wafer to an electrostatic chuck according to an embodiment of the present invention comprises: an electrostatic chuck; a semiconductor adhesive film including a base layer, a conductive layer formed on the base layer, and an adhesive layer formed on the conductive layer, the semiconductor adhesive layer being fixed to the electrostatic chuck such that the base layer faces the electrostatic chuck; and a semiconductor wafer adhered to the adhesive layer. The system for fixing a semiconductor wafer to an electrostatic chuck and the method for fixing a semiconductor wafer to an electrostatic chuck, according to the present invention, adhere a semiconductor adhesive film to a semiconductor wafer, thus the semiconductor wafer can be stably fixed to the electrostatic chuck, and can also be separated therefrom.

Description

System for fixing a semiconductor wafer to an electrostatic chuck and method for fixing a semiconductor wafer to an electrostatic chuck using the same

[0001] The present invention relates to a system for fixing a semiconductor wafer to an electrostatic chuck and a method for fixing a semiconductor wafer to an electrostatic chuck using the same, and more specifically, to a system for fixing a semiconductor wafer to an electrostatic chuck capable of stably fixing a semiconductor wafer to an electrostatic chuck (ESC) and stably separating the semiconductor wafer, and a method for fixing a semiconductor wafer to an electrostatic chuck using the same.

[0002] Recently, there has been a growing demand for thinner and smaller semiconductor devices and their packaging. Consequently, as semiconductor wafers become thinner, electrostatic chucks (ESCs) are increasingly utilized to effectively secure them. An ESC is a device used to secure wafers during semiconductor manufacturing processes. It uses electrical force to secure the wafer. Unlike conventional methods such as physical clamps or vacuum suction, it minimizes contact damage and provides consistent holding force.

[0003] To secure a semiconductor wafer in such an electrostatic chuck, a semiconductor adhesive film may be adhered to the wafer. To ensure that the wafer is electrically secured in the electrostatic chuck, the semiconductor adhesive film must possess suitable electrical properties. Furthermore, it must minimize the generation of residue or bubbles that may occur during adhesion to the semiconductor wafer. Furthermore, when voltage is applied to the electrostatic chuck, the semiconductor wafer must be stably secured to the electrostatic chuck, and when voltage is not applied, the film must be designed to allow the semiconductor wafer to be removed from the electrostatic chuck.

[0004] [Prior Art Literature]

[0005] [Patent Document]

[0006] (Patent Document 1) KR 10-2208071 B1

[0007] The present invention is intended to solve the above problems, and its purpose is to provide a system for fixing a semiconductor wafer to an electrostatic chuck, which can stably fix or separate a semiconductor wafer to or from an electrostatic chuck, and a method for fixing a semiconductor wafer to an electrostatic chuck using the same.

[0008] In addition, the purpose is to provide a system for fixing a semiconductor wafer to an electrostatic chuck, which minimizes the occurrence of residue or bubbles that may occur when a semiconductor adhesive film is adhered to a semiconductor wafer within a system for fixing a semiconductor wafer to an electrostatic chuck, and a method for fixing a semiconductor wafer to an electrostatic chuck using the same.

[0009] A system for fixing a semiconductor wafer to an electrostatic chuck according to one embodiment of the present invention includes an electrostatic chuck, a substrate layer, a conductive layer formed on the substrate layer, and an adhesive layer formed on the conductive layer, and includes a semiconductor adhesive film fixed to the electrostatic chuck so that the substrate layer faces the electrostatic chuck, and a semiconductor wafer adhered to the adhesive layer.

[0010] In a system for fixing a semiconductor wafer to an electrostatic chuck according to one embodiment of the present invention, the adhesive layer of the semiconductor adhesive film can be adhered to a coating layer formed on the semiconductor wafer.

[0011] In a system for fixing a semiconductor wafer to an electrostatic chuck according to one embodiment of the present invention, when voltage is applied to the electrostatic chuck, the semiconductor wafer is fixed to the electrostatic chuck, and when voltage is not applied to the electrostatic chuck, the semiconductor wafer can be separated from the electrostatic chuck.

[0012] In a system for fixing a semiconductor wafer to an electrostatic chuck according to one embodiment of the present invention, the semiconductor adhesive film includes a release film layer formed on the adhesive layer, and the semiconductor wafer can be adhered to the adhesive layer after the release film layer is peeled off from the adhesive layer.

[0013] In a system for fixing a semiconductor wafer to an electrostatic chuck according to one embodiment of the present invention, when the semiconductor adhesive film is fixed to the electrostatic chuck before the release film layer is removed, when voltage is applied to the electrostatic chuck, the force with which the electrostatic chuck fixes the semiconductor adhesive film in a horizontal direction may be formed to be 200 gf / 150 mm or more, and when voltage is not applied to the electrostatic chuck, the force with which the electrostatic chuck fixes the semiconductor adhesive film in a horizontal direction may be formed to be 1 gf / 150 mm or less.

[0014] In a system for fixing a semiconductor wafer to an electrostatic chuck according to one embodiment of the present invention, the magnitude of the force for peeling the release film layer from the adhesive layer in the semiconductor adhesive film can be formed to be 0.8 to 1.1 gf / 25 mm.

[0015] In a system for fixing a semiconductor wafer to an electrostatic chuck according to one embodiment of the present invention, the adhesive force formed between the coating layer and the adhesive layer can be formed to be 0.8 to 2.5 gf / 25 mm.

[0016] In a system for fixing a semiconductor wafer to an electrostatic chuck according to one embodiment of the present invention, the adhesive force formed between the coating layer and the adhesive layer may be maintained even at a temperature of 10°C to 110°C.

[0017] In a system for fixing a semiconductor wafer to an electrostatic chuck according to one embodiment of the present invention, the Young's modulus value of the semiconductor adhesive film with the release film layer removed is 3500 to 4300 N / mm 2can be formed as

[0018] In a system for fixing a semiconductor wafer to an electrostatic chuck according to one embodiment of the present invention, the adhesive layer may include a silicon-based compound.

[0019] In a system for fixing a semiconductor wafer to an electrostatic chuck according to one embodiment of the present invention, the coating layer may be formed of an organic coating agent.

[0020] In one embodiment of the present invention, a method for fixing a semiconductor wafer to an electrostatic chuck may include a semiconductor adhesive film in which a substrate layer, a conductive layer, an adhesive layer, and a release film layer are sequentially laminated, a method for fixing a semiconductor wafer to an electrostatic chuck, the method including a semiconductor adhesive film fixing step of fixing the semiconductor adhesive film to the electrostatic chuck so that the substrate layer faces the electrostatic chuck after voltage is applied to the electrostatic chuck, a release film layer peeling step of peeling the release film layer from the adhesive layer of the semiconductor adhesive film, and a semiconductor wafer sticking step of sticking the semiconductor wafer to the adhesive layer.

[0021] In one embodiment of the present invention, a method for fixing another semiconductor wafer to an electrostatic chuck may include an electrostatic chuck separation step of separating the semiconductor wafer and the semiconductor adhesive film together from the electrostatic chuck after the applied voltage from the electrostatic chuck is turned off, and a semiconductor wafer peeling step of separating the semiconductor wafer from the adhesive layer.

[0022] In another embodiment of the present invention, in a method for fixing a semiconductor wafer to an electrostatic chuck, in the semiconductor wafer adhesion step, a coating layer formed on the semiconductor wafer and the adhesion layer can be adhered to each other.

[0023] In another embodiment of the present invention, in a method for fixing a semiconductor wafer to an electrostatic chuck, the semiconductor wafer peeling step may be characterized by separating the coating layer and the adhesive layer from each other.

[0024] In one embodiment of the present invention, a method for fixing another semiconductor wafer to an electrostatic chuck is such that, in the step 1, when voltage is applied to the electrostatic chuck, the force with which the electrostatic chuck fixes the semiconductor adhesive film in a horizontal direction can be formed to be 200 gf / 150 mm or more.

[0025] In one embodiment of the present invention, a method for fixing another semiconductor wafer to an electrostatic chuck is such that, in the electrostatic chuck separation step, when no voltage is applied to the electrostatic chuck, the force with which the electrostatic chuck fixes the semiconductor adhesive film in a horizontal direction can be formed to be 1 gf / 150 mm or less.

[0026] In one embodiment of the present invention, a method for fixing another semiconductor wafer to an electrostatic chuck may be such that, in the release film layer peeling step, the magnitude of the force for peeling the release film layer from the adhesive layer in the semiconductor adhesive film may be formed to be 0.8 to 1.1 gf / 25 mm.

[0027] In one embodiment of the present invention, a method for fixing another semiconductor wafer to an electrostatic chuck is such that, in the semiconductor wafer peeling step, an adhesive force formed between the coating layer and the adhesive layer can be formed to be 0.8 to 2.5 gf / 25 mm.

[0028] In one embodiment of the present invention, a method for fixing another semiconductor wafer to an electrostatic chuck may be characterized in that, in the semiconductor wafer peeling step, the adhesive force formed between the coating layer and the adhesive layer is maintained even at a temperature of 10°C to 110°C.

[0029] In another embodiment of the present invention, in a method for fixing a semiconductor wafer to an electrostatic chuck, the Young's modulus value of the semiconductor adhesive film after the release film layer peeling step is 3500 to 4300 N / mm 2 can be formed as

[0030] In a method for fixing a semiconductor wafer to an electrostatic chuck according to one embodiment of the present invention, the adhesive layer may include a silicon-based compound.

[0031] In a method for fixing a semiconductor wafer to an electrostatic chuck according to one embodiment of the present invention, the coating layer may be formed of an organic coating agent.

[0032] A system for fixing a semiconductor wafer to an electrostatic chuck and a method for fixing a semiconductor wafer to an electrostatic chuck according to the present invention enable the semiconductor wafer to be stably fixed to the electrostatic chuck and also to be separated by adhering a semiconductor adhesive film to the semiconductor wafer.

[0033] In addition, in the system for fixing a semiconductor wafer to an electrostatic chuck and the method for fixing a semiconductor wafer to an electrostatic chuck according to the present invention, it is possible to establish specific conditions such as force, adhesive force, and Young's modulus for fixing a semiconductor wafer to an electrostatic chuck, and accordingly, it is possible to minimize the occurrence of residue or bubbles that may occur when a semiconductor adhesive film is adhered to a semiconductor wafer in the system for fixing a semiconductor wafer to an electrostatic chuck.

[0034] FIG. 1 is a conceptual diagram of a system for fixing a semiconductor wafer to an electrostatic chuck according to one embodiment of the present invention;

[0035] Figures 2 to 6 are conceptual diagrams illustrating a method for fixing a semiconductor wafer to an electrostatic chuck according to one embodiment of the present invention; and

[0036] FIGS. 7 and 8 are graphs showing Young's modulus values ​​of semiconductor adhesive films used in a system for fixing a semiconductor way to an electrostatic chuck according to an embodiment of the present invention.

[0037] Hereinafter, various embodiments of the present invention will be described with reference to the accompanying drawings. It should be understood that the present invention is not limited to specific embodiments, but rather encompasses various modifications, equivalents, and / or alternatives of the embodiments of the present invention. In connection with the description of the drawings, similar reference numerals may be used for similar components.

[0038] In this document, the expressions “has”, “may have”, “includes”, or “may include” indicate the presence of a feature (e.g., a number, function, operation, or component such as a part), but do not exclude the presence of additional features.

[0039] In this document, the expressions "A or B," "at least one of A and / or B," or "one or more of A and / or B" can include all possible combinations of the listed items. For example, "A or B," "at least one of A and B," or "at least one of A or B" can all refer to cases where (1) at least one A is included, (2) at least one B is included, or (3) at least one A and at least one B are included.

[0040] The expression "configured to" as used herein can be used interchangeably with, for example, "suitable for", "having the capacity to", "designed to", "adapted to", "made to", or "capable of". The term "configured to" does not necessarily mean "specifically designed to".

[0041] The terms used in this document are used only to describe specific embodiments and may not be intended to limit the scope of other embodiments. The singular expression may include the plural expression unless the context clearly indicates otherwise. Terms used herein, including technical or scientific terms, may have the same meaning as commonly understood by those of ordinary skill in the art described in this document. Terms defined in general dictionaries among the terms used in this document may be interpreted as having the same or similar meaning in the context of the relevant technology, and shall not be interpreted in an idealized or overly formal sense unless explicitly defined in this document. In some cases, even if a term is defined in this document, it cannot be interpreted to exclude the embodiments of this document.

[0042] Accordingly, the configurations of the embodiments described in this specification are only some of the most preferred embodiments of the present invention and do not represent all of the technical ideas of the present invention, so it should be understood that there may be various equivalents and modified examples that can replace them at the time of filing this application.

[0043] Throughout the specification, whenever a part is said to “include” a component, this does not mean that it excludes other components, but rather that it may include other components, unless otherwise stated.

[0044] The objects, specific advantages, and novel features of the present invention described herein will become more apparent from the following detailed description and preferred embodiments thereof, taken in conjunction with the accompanying drawings. In this specification, reference numerals are given to components in each drawing, and it should be noted that, as far as possible, identical components are given the same numerals even if they are shown in different drawings. Furthermore, terms such as "one side," "the other side," "first," and "second" are used to distinguish one component from another, and the components are not limited by these terms. In the following description of the present invention, detailed descriptions of related known technologies that may unnecessarily obscure the gist of the present invention will be omitted.

[0045] Hereinafter, an embodiment of the present invention will be described in detail with reference to the attached drawings, and the same reference numerals indicate the same components.

[0046]

[0047] In this specification, “electrostatic chuck” refers to an Electrostatic Chuck (ESC), a device used to fix wafers or films (process tapes) in the semiconductor manufacturing process. This device can prevent various problems that may occur during the process by fixing the wafer using electrostatic force instead of physical methods. The electrostatic chuck has the principle of fixing the wafer using electrostatic force. This method generates electrostatic suction force by applying voltage between the wafer and the electrostatic chuck. Electrostatic chucks are generally designed with a monopolar or bipolar structure, and each structure can be distinguished by the number of electrodes.

[0048]

[0049] In this specification, “electrostatic chucking and reaction” refers to the phenomenon in which, when a semiconductor adhesive film described below is positioned near an electrostatic chuck and voltage is applied to the electrostatic chuck, mutual static electricity is generated between the semiconductor adhesive film and the electrostatic chuck, and the electrostatic chuck and the semiconductor adhesive film can be electrostatically attracted (chucking) by electrostatic attraction.

[0050]

[0051] A system (1) for fixing a semiconductor wafer to an electrostatic chuck according to one embodiment of the present invention includes an electrostatic chuck (100), a substrate layer (210), a conductive layer (220) formed on the substrate layer (210), and an adhesive layer (230) formed on the conductive layer (220), and includes a semiconductor adhesive film (200) fixed to the electrostatic chuck (100) so that the substrate layer (210) faces the electrostatic chuck (100), and a semiconductor wafer (300) adhered to the adhesive layer (230).

[0052] In a system (1) for fixing a semiconductor wafer to an electrostatic chuck according to one embodiment of the present invention, the adhesive layer (230) may include a silicon-based compound.

[0053]

[0054] Referring to Fig. 1, a system (1) for fixing a semiconductor wafer to an electrostatic chuck according to one embodiment of the present invention is illustrated. A semiconductor wafer (300) adhered to an adhesive layer (230) of a semiconductor adhesive film (200) is fixed to the electrostatic chuck (100). In Fig. 1, the electrostatic chuck (100) is illustrated as being arranged at the top, but the arrangement direction of the system (1) may vary and is not limited thereto. When voltage is applied to the electrostatic chuck (100), the semiconductor adhesive film (200) reacts with the electrostatic chuck (100) and is fixed to the electrostatic chuck (100).

[0055]

[0056] The semiconductor adhesive film (200) is formed in a form in which a substrate layer (210), a conductive layer (220), and an adhesive layer (230) are laminated in that order.

[0057]

[0058] The substrate layer (210) may be selected from the group consisting of polyethylene terephthalate, polyethylene, polyimide, acrylic resin, cycloolefin polymer, mixtures thereof, and copolymers thereof.

[0059]

[0060] The conductive layer (220) may be selected from the group consisting of poly(3,4-ethylenedioxythiophene) (poly(3,4-ethylenedioxythiophene. PEDOT), poly(3,4-ethylenedioxythiophene) polystyrenesulfonate (poly(3,4-ethylenedioxythiophene) polystyrenesulfonate. PEDOT-PSS), carbon nanotubes (CNT), graphene, indium tin oxide (ITO), silver nanowires, and combinations thereof. The conductive layer (220) constituting the present invention is characterized in that it essentially requires transparency in addition to the electrical properties described above.

[0061] In addition, the conductive layer (220) can be formed by crosslinking a mixture of poly(3,4-ethylenedioxythiophene) polystyrene sulfonate and water-dispersed polyurethane with aziridine. When forming an adhesive layer (230) on the conductive layer (220), a portion of the conductive layer (220) may be removed by a solvent that dissolves the materials constituting the adhesive layer (230). To prevent this, it is necessary to improve the solvent resistance of the conductive layer (220), and in the present invention, this is implemented by crosslinking with aziridine.

[0062] And, the weight ratio of polyurethane to poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT-PSS) of the conductive layer (220) may be 1:9, 1.5:8.5, or 3:7. If the PEDOT-PSS content is less than the above range, the surface resistance, dielectric loss, and dielectric constant conditions that can react with an electrostatic chuck cannot be satisfied, and on the contrary, if it exceeds the above range, the physical properties can be satisfied, but since the polyurethane is insufficient to sufficiently crosslink with the aziridine crosslinking agent, not only is the solvent resistance not secured, but it is also not desirable from an economical perspective.

[0063] And, the weight ratio of the poly(3,4-ethylenedioxythiophene) polystyrene sulfonate and water-dispersed polyurethane mixture of the conductive layer (220) and aziridine may be 100:8 to 63, 100:10 to 63, or 100:12 to 63. If the weight ratio of aziridine is less than the above range, the carboxyl group of the water-dispersed polyurethane is not sufficiently crosslinked, and thus the solvent resistance is not secured. On the other hand, if it exceeds the above range, unreacted aziridine may migrate to the surface depending on time and temperature, which is economically undesirable.

[0064] In addition, the poly(3,4-ethylenedioxythiophene) polystyrene sulfonate and water-dispersed polyurethane mixture of the above-described conductive layer (220) may be a solution dissolved in a solvent selected from the group consisting of water, ethanol, methanol, isopropyl alcohol, and mixtures thereof.

[0065] In addition, the solution may further comprise a stabilizer selected from the group consisting of ethylene glycol, sorbitol and mixtures thereof.

[0066] And, the concentration of the poly(3,4-ethylenedioxythiophene) polystyrene sulfonate and polyurethane mixture dissolved in a solvent selected from the group consisting of water, ethanol, methanol, isopropyl alcohol and mixtures thereof may be 0.8 to 1.2 wt% or 0.8 to 0.9 wt%. If the concentration of the solution is less than the above range, the particles of Pedot-PSS may come out to the surface, which may cause coating lines on the coating surface, and on the contrary, if it exceeds the above range, the solid content may decrease, which may increase the wet thickness, and the surface may become uneven due to the fluidity of the coating solution on the coating surface.

[0067] The thickness of the conductive layer (220) may be 0.03 to 3 ㎛. If the thickness of the conductive layer (220) is less than the above range, the surface resistance becomes high and the dielectric loss becomes low, so that the wafer (W) to which the semiconductor adhesive film (200) is adhered may not be fixed to the electrostatic chuck. If the thickness of the conductive layer (220) exceeds the above range, the surface resistance becomes low and the dielectric loss becomes high, so that the wafer (W) to which the semiconductor adhesive film (200) is adhered may not be fixed to the electrostatic chuck.

[0068] Additionally, the above-mentioned conductive layer (220) can be gravure coated on the substrate layer (210).

[0069] In addition, the conductive layer (220) can be dried with hot air at 60 to 100°C or 20 to 35 Hz for 30 to 90 seconds. If the drying time or drying temperature is below the above range, drying is insufficient, and curing or solvent volatilization is not completely achieved, which may affect electrical properties such as dielectric constant.

[0070]

[0071] The adhesive layer (230) may include at least one selected from the group consisting of rubber-based compounds, acrylic-based compounds, silicone-based compounds, and urethane-based compounds, and preferably may include a silicone-based compound.

[0072] The above silicone compound may be derived from a constituent unit of an organopolysiloxane of the chemical formula 1 below or a derivative thereof and a hydrogen siloxane copolymer of the chemical formula 2 below or a derivative thereof.

[0073] [Chemical Formula 1]

[0074]

[0075] Here, R1 and R8 are each independently one selected from the group consisting of hydrogen, alkyl and alkenyl, R2 to R7 are either hydrogen or alkyl, and n1 may be an integer of 5 to 200,000, preferably an integer of 500 to 100,000, and more preferably an integer of 1,000 to 50,000.

[0076]

[0077] [Chemical Formula 2]

[0078]

[0079] Here, the above R9 to R 18 At least one of them is hydrogen, and R9 to R 18 at Except for the hydrogen moiety, the remainder are each independently alkyl, wherein n2 is an integer from 1 to 200, and n3 is an integer from 1 to 100.

[0080]

[0081] Preferably, the organopolysiloxane of the above chemical formula 1 or a derivative thereof is a polydimethylsiloxane containing vinyl groups at both terminals, and has a weight average molecular weight of 600,000 to 700,000, a number average molecular weight of 300,000 to 400,000, and the vinyl group content may be 0.02 to 0.2 mmol / g, 0.1 to 0.2 mmol / g, or 0.15 to 0.2 mmol / g. If the vinyl group content is less than the above range, it may not be sufficiently crosslinked with Si-H, so that the dielectric loss value increases and thus the electrostatic chuck may not react. On the contrary, if it exceeds the above range, the crosslinking density with Si-H increases, so that the dielectric loss value decreases and thus the electrostatic chuck may not react.

[0082] Preferably, the hydrogen siloxane copolymer of the above chemical formula 2 or a derivative thereof may have 1 to 2 hydrogen groups (-H) substituted with alkyl groups having 1 to 2 carbon atoms. More preferably, the hydrogen siloxane copolymer of the above chemical formula 2 may be an alkylhydrosiloxane-dialkylsiloxane copolymer, and more preferably, it may be a methylhydrosiloxane-dimethylsiloxane copolymer, and the R 12 is hydrogen and the rest are R9 to R 11 and R 13 Inland R 19 The weight average molecular weight (Mw) of the hydrogen siloxane copolymer of the above chemical formula 2 may be 1,000 to 10,000, and more preferably 1,500 to 4,000.

[0083] And, the Si-H content of the hydrogen siloxane copolymer of the above chemical formula 2 or its derivative may be 4 to 16 mmol / g, 4 to 10 mmol / g or 4 to 5 mmol / g. If the Si-H content is less than the above range, the vinyl group included in the organopolysiloxane of the above chemical formula 1 or its derivative may not be sufficiently crosslinked, which may increase the dielectric loss. On the other hand, if the Si-H content exceeds the above range, unreacted Si-H groups may be generated and migrate to the surface of the adhesive layer.

[0084] The above silicone compound preferably uses platinum as a catalyst when reacting the compound of the above chemical formula 1 and the compound of the above chemical formula 2. In addition, the present invention may apply an addition reaction (curing) step, particularly to increase crosslinking density and lower dielectric constant.

[0085] The molar ratio of the vinyl group contained in the organopolysiloxane of the above chemical formula 1 or its derivative and the Si-H group of the hydrogen siloxane copolymer of the above chemical formula 2 or its derivative may be 1:1 to 3.

[0086] If the molar ratio exceeds the above-mentioned range, the crosslinking density increases, but an out-gassing phenomenon occurs due to hydrogen gas generated when the Si-H that has not reacted with vinyl increases, and conversely, if it is below the above range, the number of crosslinking points with vinyl decreases, so the crosslinking density and dielectric constant decrease, and the dielectric loss increases, making it difficult to react to electrostatic chucking.

[0087] The above adhesive layer (230) may be a pressure-sensitive adhesive layer. In addition to the organopolysiloxane of the above-described chemical formula 1 or a derivative thereof and the hydrogen siloxane copolymer of the above-described chemical formula 2 or a derivative thereof, additional components may be included to improve the physical properties of the pressure-sensitive adhesive layer.

[0088] Additional components include silicone gum or MQ resin. The adhesive layer can adhere to sensitive areas such as wafers or organic film layers, and has good adhesive strength and maintains a predetermined crosslinking density, so that the adhesive properties of the product can be maintained even after a certain period of time.

[0089] In addition, the adhesive layer (230) can be slot-die coated or comma-coated on the conductive layer (220).

[0090] In addition, the adhesive layer (230) can be dried with hot air at 60 to 150°C or 30 to 35 Hz for 90 to 180 seconds. If the drying time or drying temperature is below the above range, drying is insufficient, and curing or solvent volatilization is not completely achieved, which may affect electrical properties such as dielectric constant.

[0091]

[0092] In a system (1) for fixing a semiconductor wafer to an electrostatic chuck according to one embodiment of the present invention, the adhesive layer (230) of the semiconductor adhesive film (200) can be adhered to a coating layer (310) formed on the semiconductor wafer (300).

[0093] In a system (1) for fixing a semiconductor wafer to an electrostatic chuck according to one embodiment of the present invention, the coating layer (310) can be formed of an organic coating agent.

[0094]

[0095] In a system (1) for fixing a semiconductor wafer to an electrostatic chuck according to an embodiment of the present invention, a coating layer (310) may be formed on a semiconductor wafer (300) and adhered to an adhesive layer (230). The coating layer (310) formed on the semiconductor wafer (300) may be formed to protect the semiconductor wafer (300). The coating layer (310) may be formed through methods such as spin coating, chemical vapor deposition, physical vapor deposition, and atomic layer deposition, and is not limited to the above methods. The material of the coating layer (310) may be formed of an organic coating agent, and more specifically, materials such as polyvinylpyrrolidone (PVP), PMMA (Polymethyl Methacrylate), and IPA (isopropyl alcohol) may be applied. The adhesive layer (230) must have a characteristic that is sufficiently adhesive to the coating layer (310) while maintaining an adhesive strength that can be separated from the coating layer (310) without damaging the wafer (300), and another characteristic is that the adhesive layer (230) must be formed so that it can be separated from the coating layer (310) without residue that may be generated by the reaction between the coating layer (310) and the adhesive layer (230).

[0096]

[0097] In a system (1) for fixing a semiconductor wafer (1) to an electrostatic chuck (100) according to one embodiment of the present invention, when voltage is applied to the electrostatic chuck (100), the semiconductor wafer (300) is fixed to the electrostatic chuck (100), and when voltage is not applied to the electrostatic chuck (100), the semiconductor wafer (300) can be separated from the electrostatic chuck.

[0098]

[0099] To explain in more detail, when voltage is applied to the electrostatic chuck (100), a Coulomb force or a Johnson-Rahbek force is generated between the electrostatic chuck (100) and the semiconductor wafer (300), so that the semiconductor wafer (300) can be fixed to the electrostatic chuck (100). At this time, the semiconductor adhesive film (200) can also react with the electrostatic chuck (100) and be fixed to the electrostatic chuck (100) by the Coulomb force or the Johnson-Rahbek force. The semiconductor adhesive film (200) can play a role in enabling the semiconductor wafer (300) to be stably fixed to the electrostatic chuck (100), and can also play a role in protecting the wafer (300) from being damaged by the charge applied from the electrostatic chuck (100).

[0100] When no voltage is applied to the electrostatic chuck (100), the force generated between the semiconductor wafer (300) and the electrostatic chuck (100) disappears, allowing the semiconductor wafer (300) to be separated from the electrostatic chuck (100). To this end, the force generated between the semiconductor adhesive film (200) and the electrostatic chuck (100) must also disappear, and to this end, when no voltage is applied to the electrostatic chuck (100), the charge remaining in the semiconductor adhesive film (200) must be formed to be very small.

[0101]

[0102] In a system (1) for fixing a semiconductor wafer to an electrostatic chuck according to one embodiment of the present invention, the semiconductor adhesive film (200) includes a release film layer (240) formed on the adhesive layer (230), and the semiconductor wafer (300) can be adhered to the adhesive layer (230) after the release film layer (240) is peeled off from the adhesive layer (230).

[0103]

[0104] A release film layer (240) may be formed on the semiconductor adhesive film (200) used in the system (1) for fixing a semiconductor wafer to an electrostatic chuck according to one embodiment of the present invention. If the release film layer (240) is not formed, the film (200) may be used in the form of a tape. The release film layer (240) may serve to protect the adhesive layer (230). The release film layer (240) may be removed after the semiconductor adhesive film (200) is fixed to the electrostatic chuck (100).

[0105]

[0106] In a system (1) for fixing a semiconductor wafer to an electrostatic chuck according to one embodiment of the present invention, when the semiconductor adhesive film (200) is fixed to the electrostatic chuck (100) before the release film layer (240) is removed, when voltage is applied to the electrostatic chuck (100), the force with which the electrostatic chuck (100) fixes the semiconductor adhesive film (200) in a horizontal direction may be formed to be 200 gf / 150 mm or more, and when voltage is not applied to the electrostatic chuck (100), the force with which the electrostatic chuck (100) fixes the semiconductor adhesive film (200) in a horizontal direction may be formed to be 1 gf / 150 mm or less.

[0107]

[0108] Referring to Fig. 2, it can be seen that the semiconductor adhesive film (200) is fixed to the electrostatic chuck (100). At this time, when voltage is applied to the electrostatic chuck (100) and the semiconductor adhesive film (200) reacts with the electrostatic chuck (100) and is fixed to the electrostatic chuck (200), it is necessary to fix it so that it does not move in the horizontal direction of the electrostatic chuck (100) and the horizontal direction of the semiconductor adhesive film (200). Since even the slightest shaking of the semiconductor wafer (300) is not allowed in the semiconductor process, fixing in the horizontal direction is also very important. At this time, the force with which the electrostatic chuck (100) fixes the semiconductor adhesive film (200) in the horizontal direction is formed to be 200 gf / 150 mm or more so that the electrostatic chuck (100) stably fixes the semiconductor adhesive film (200) and also stably fixes the wafer (300) adhered to the film (200).

[0109] When no voltage is applied to the electrostatic chuck (100), the wafer (300) must be stably separated from the electrostatic chuck (100), and the separation direction is formed in the horizontal direction of the electrostatic chuck (100) and the horizontal direction of the semiconductor adhesive film (200). Therefore, when no voltage is applied to the electrostatic chuck (100), the force with which the electrostatic chuck (100) fixes the semiconductor adhesive film (200) in the horizontal direction can be formed to be 1 gf / 150 mm or less. The reason why there is a possibility that a force acts between the semiconductor adhesive film (200) and the electrostatic chuck (100) even when the voltage of the electrostatic chuck (100) is not applied is because a residual charge may remain in the conductive layer (220) of the semiconductor adhesive film (200). Therefore, in order to minimize the attractive force with the electrostatic chuck (100) caused by the residual charge formed in the conductive layer (220) when no voltage is applied to the electrostatic chuck (100), the conductive layer (220) is formed between the base layer (210) and the adhesive layer (230), and further, the thickness of the conductive layer (220) is formed to be 0.03 to 3 ㎛. When the thickness of the conductive layer (220) exceeds 3 ㎛, the charge remaining in the conductive layer (220) increases even after the voltage of the electrostatic chuck (100) is turned off, and thus the attractive force between the semiconductor adhesive film (200) and the electrostatic chuck (100) increases, so that the separation of the film (200) may not be smooth. In addition, when the thickness of the conductive layer (220) is smaller than 0.03 ㎛, when voltage is applied to the electrostatic chuck (100), the charge amount of the conductive layer (220) is small, so the attractive force generated between the film (200) and the electrostatic chuck (100) may be too small, and the fixing force may be weakened, and the conductive layer (220) may not be able to block the charge from being applied to the wafer (300).

[0110]

[0111] In a system (1) for fixing a semiconductor wafer to an electrostatic chuck according to one embodiment of the present invention, the magnitude of the force for peeling the release film layer (240) from the adhesive layer (230) in the semiconductor adhesive film (200) can be formed to be 0.8 to 1.1 gf / 25 mm.

[0112]

[0113] The semiconductor adhesive film (200) can be supplied into the semiconductor equipment through a roller system, and therefore, the release film layer (240) of the semiconductor adhesive film (200) must not be peeled off in the roller system. Therefore, it is preferable that the force for peeling the release film layer (240) from the adhesive layer (230) be formed to be 0.8 gf / 25 mm or more.

[0114] In addition, when the force for peeling the release film layer (240) from the adhesive layer (230) is formed to be a certain force or more, as shown in FIG. 3, the semiconductor adhesive film (200) can move without being fixed to the electrostatic chuck (100) due to the horizontal force applied to the semiconductor adhesive film (200) by the force for peeling the release film layer (240). Therefore, it is preferable that the force for peeling the release film layer (240) from the adhesive layer (230) be formed to be 1.1 gf / 25 mm or less.

[0115]

[0116] In a system (1) for fixing a semiconductor wafer to an electrostatic chuck according to one embodiment of the present invention, the adhesive force formed between the coating layer (310) and the adhesive layer (230) can be formed to be 0.8 gf / 25 mm or more and less than 2.5 gf / 25 mm.

[0117]

[0118] The reason for setting an upper limit of the adhesive force between the coating layer (310) and the adhesive layer (230) is to eliminate the possibility of damage to the wafer (300) that may occur when the coating layer (310) and the adhesive layer (230) are separated from each other, as shown in FIG. 6. Since the force that adheres the coating layer (310) and the wafer (300) to each other can be formed to be 2.5 gf / 25 mm or more, the adhesive force between the coating layer (310) and the adhesive layer (230) can be formed to be less than 2.5 gf / 25 mm, thereby preventing the coating layer (310) from being separated from the wafer (300) when the coating layer (310) and the adhesive layer (230) are separated from each other.

[0119] The reason for setting a lower limit of the adhesive force between the coating layer (310) and the adhesive layer (230) is that if the adhesive force is lower than the standard value, there is a high possibility that a lifting phenomenon or a tunneling phenomenon (a phenomenon in which air enters the lifting area) may occur between the coating layer (310) and the adhesive layer (230). Therefore, the adhesive force between the coating layer (310) and the adhesive layer (230) can be formed to be 0.8 gf / 25 mm or more.

[0120]

[0121] In a system (1) for fixing a semiconductor wafer to an electrostatic chuck according to one embodiment of the present invention, the adhesive force formed between the coating layer (310) and the adhesive layer (230) may be maintained even at a temperature of 10°C to 110°C.

[0122]

[0123] In the semiconductor manufacturing process, a film that exhibits normal performance at various temperatures is required, and the system (1) for fixing a semiconductor wafer to an electrostatic chuck according to one embodiment of the present invention is capable of operating normally at temperatures from 10°C to 110°C, and more preferably, at temperatures from 25°C to 100°C, so that the adhesive force formed between the coating layer (310) and the adhesive layer (230) is maintained so that the system can operate normally at temperatures from 10°C to 110°C.

[0124]

[0125] In a system (1) for fixing a semiconductor wafer to an electrostatic chuck according to one embodiment of the present invention, the Young's modulus value of the semiconductor adhesive film (200) with the release film layer (240) removed is 3500 to 4300 N / mm 2 can be formed as

[0126]

[0127] Referring to FIGS. 7 and 8, the Young's modulus values ​​measured along the longitudinal and transverse directions of the semiconductor adhesive film (200) utilized in the system (1) for fixing a semiconductor wafer to an electrostatic chuck according to one embodiment of the present invention are shown. The Young's modulus value of the semiconductor adhesive film (200) with the release film layer (240) removed is 3500 N / mm. 2 If it is formed to be less than 4300 N / mm, there is no bending correction force for the semiconductor wafer (300), so the fixing force for the wafer (300) may be weakened. The Young's modulus value of the semiconductor adhesive film (200) is 4300 N / mm 2 In case that the semiconductor adhesive film (200) and the wafer (300) are separated from each other, the separation force may be applied to the wafer (300), causing cracks in the wafer (300).

[0128]

[0129] FIGS. 2 to 6 sequentially illustrate a method of fixing a semiconductor wafer to an electrostatic chuck according to one embodiment of the present invention.

[0130]

[0131] In one embodiment of the present invention, a method for fixing another semiconductor wafer to an electrostatic chuck may include a method for fixing a semiconductor wafer (300) to an electrostatic chuck (100) by using a semiconductor adhesive film (200) in which a base layer (210), a conductive layer (220), an adhesive layer (230), and a release film layer (240) are sequentially laminated, the method including a semiconductor adhesive film fixing step of fixing the semiconductor adhesive film (200) to the electrostatic chuck (100) so that the base layer (210) faces the electrostatic chuck (100) after voltage is applied to the electrostatic chuck (100), a release film layer peeling step of peeling the release film layer (240) from the adhesive layer (230) of the semiconductor adhesive film (200), and a semiconductor wafer sticking step of sticking the semiconductor wafer (300) to the adhesive layer (230).

[0132]

[0133] Referring to Fig. 2, in the case of the semiconductor adhesive film fixing step, the semiconductor adhesive film (200) is fixed to the electrostatic chuck (100). Since the semiconductor adhesive film (200) has a conductive layer (220) formed between the substrate layer (210) and the adhesive layer (230), when voltage is applied to the electrostatic chuck (100), a charge is induced in the conductive layer (220), thereby generating an attractive force between the film (200) and the electrostatic chuck (100).

[0134] Referring to Fig. 3, in the case of the release film layer peeling step, it is a step of peeling the release film layer (240) from the film (200) fixed to the electrostatic chuck (100). The adhesive force between the adhesive layer (230) and the release film layer (240) is set in consideration of the possibility of the release film layer (240) being peeled from the roller that supplies the semiconductor adhesive film (200) to the semiconductor equipment and the possibility of the film (200) moving when peeling the release film layer (240) from the film (200) fixed to the electrostatic chuck (100).

[0135] Referring to Figure 4, in the case of the semiconductor wafer adhesion step, it is a step of adhering a wafer (300) to an adhesive layer (230).

[0136]

[0137] In one embodiment of the present invention, a method for fixing another semiconductor wafer to an electrostatic chuck may include an electrostatic chuck separation step of separating the semiconductor wafer (300) and the semiconductor adhesive film (200) together from the electrostatic chuck (100) after the applied voltage from the electrostatic chuck (100) is turned off, and a semiconductor wafer peeling step of separating the semiconductor wafer (300) from the adhesive layer (230).

[0138]

[0139] Referring to FIG. 5, the electrostatic chuck separation step is a step in which the wafer (300) and the film (200) are separated from the electrostatic chuck (100) in an adhered state after the applied voltage to the electrostatic chuck (100) is turned off. At this time, even when the applied voltage to the electrostatic chuck (100) is turned off, since the charge induced in the conductive layer (220) remains, an attractive force continues to operate between the electrostatic chuck (100) and the film (200), so that the wafer (300) and the film (200) may not be separated from the electrostatic chuck (100). Therefore, by forming the conductive layer (220) between the substrate layer (210) and the adhesive layer (230), the attractive force between the film (200) and the electrostatic chuck (100) caused by the residual charge formed in the conductive layer (220) can be minimized.

[0140] Referring to Fig. 6, the semiconductor wafer peeling step is a step of separating the semiconductor wafer (300) from the adhesive layer (230). At this time, the adhesive strength of the adhesive layer (230) can be set so that the wafer (300) is fixed with an appropriate adhesive strength without damaging the semiconductor wafer (300).

[0141]

[0142] In another embodiment of the present invention, in a method for fixing a semiconductor wafer to an electrostatic chuck, in the semiconductor wafer adhesion step, the coating layer (310) formed on the semiconductor wafer (300) and the adhesion layer (230) can be adhered to each other.

[0143]

[0144] As shown in Fig. 4, a coating layer (310) can be formed on a semiconductor wafer (300) and adhered to an adhesive layer (230).

[0145]

[0146] In another embodiment of the present invention, in a method for fixing a semiconductor wafer to an electrostatic chuck, the semiconductor wafer peeling step may be characterized by separating the coating layer (310) and the adhesive layer (230) from each other.

[0147]

[0148] As shown in Fig. 6, the semiconductor wafer peeling step is a step of separating the coating layer (310) and the adhesive layer (230). In order to stably maintain the fixing force between the coating layer (310) and the adhesive layer (230) while preventing damage to the wafer (300) when separating the coating layer (310) and the adhesive layer (230), the adhesive force between the coating layer (310) and the adhesive layer (230) can be formed appropriately.

[0149]

[0150] In one embodiment of the present invention, a method for fixing another semiconductor wafer to an electrostatic chuck is such that, in the semiconductor adhesive film fixing step, when voltage is applied to the electrostatic chuck (100), the force with which the electrostatic chuck (100) fixes the semiconductor adhesive film (200) in a horizontal direction can be formed to be 200 gf / 150 mm or more.

[0151]

[0152] If the film (200) in Fig. 2 moves horizontally, the release film layer (240) cannot be stably peeled off, and the wafer (300) cannot be precisely adhered to the film (200). Therefore, when voltage is applied to the electrostatic chuck (100), the force with which the electrostatic chuck (100) fixes the semiconductor adhesive film (200) horizontally can be formed to be 200 gf / 150 mm or more.

[0153]

[0154] In one embodiment of the present invention, a method for fixing another semiconductor wafer to an electrostatic chuck is such that, in the electrostatic chuck separation step, when no voltage is applied to the electrostatic chuck (100), the force with which the electrostatic chuck (100) fixes the semiconductor adhesive film (200) in a horizontal direction can be formed to be 1 gf / 150 mm or less.

[0155]

[0156] Referring to Fig. 5, when no voltage is applied to the electrostatic chuck (100), the film (200) and the wafer (300) must be stably separated from the electrostatic chuck (100). The direction in which the film (200) and the wafer (300) are separated from the electrostatic chuck (100) may be while moving in the horizontal direction. Therefore, when no voltage is applied to the electrostatic chuck (100), the force for fixing the film (200) in the horizontal direction on the electrostatic chuck (100) must be formed to be 1 gf / 150 mm or less.

[0157]

[0158] In one embodiment of the present invention, a method for fixing another semiconductor wafer to an electrostatic chuck may be such that, in the release film layer peeling step, the magnitude of the force for peeling the release film layer (240) from the adhesive layer (230) in the semiconductor adhesive film (200) may be formed to be 0.8 to 1.1 gf / 25 mm.

[0159]

[0160] In Fig. 3, the peeling step of the release film layer is illustrated, and the description of the size of the peeling force occurring between the adhesive layer (230) and the release film layer (240) is replaced with the description in the system (1).

[0161]

[0162] In one embodiment of the present invention, a method for fixing another semiconductor wafer to an electrostatic chuck is such that, in the semiconductor wafer peeling step, the adhesive force formed between the coating layer (310) and the adhesive layer (230) can be formed to be 0.8 to 2.5 gf / 25 mm.

[0163] In one embodiment of the present invention, a method for fixing another semiconductor wafer to an electrostatic chuck may be characterized in that, in the semiconductor wafer peeling step, the adhesive force formed between the coating layer and the adhesive layer is maintained even at a temperature of 10°C to 110°C.

[0164]

[0165] In Fig. 6, a semiconductor wafer peeling step is illustrated, and the description of the adhesive force occurring between the coating layer (310) and the adhesive layer (230) and the description of the temperature are replaced with the description in the system (1).

[0166]

[0167] In another embodiment of the present invention, in a method for fixing a semiconductor wafer to an electrostatic chuck, the Young's modulus value of the semiconductor adhesive film (200) after the release film layer peeling step is 3500 to 4300 N / mm 2 can be formed as

[0168]

[0169] In Fig. 3, the release film layer peeling step is illustrated, and the description of the Young's modulus value of the semiconductor adhesive film (200) in a state where the release film layer (240) is removed after the release film layer peeling step is replaced with the description in the system (1).

[0170]

[0171] Hereinafter, embodiments of the present invention will be described.

[0172] Example

[0173] Manufacturing example of semiconductor adhesive film (200): Base layer + conductive layer + adhesive layer + release film layer

[0174] The semiconductor adhesive film (200) is formed by laminating a substrate layer (210), a conductive layer (220), an adhesive layer (230), and a release film layer (240) in that order.

[0175] A 0.8 wt% aqueous solution of a mixture of poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT-PSS) and a water-dispersed polyurethane (PEDOT-PSS:polyurethane = 1:9 wt) was cross-linked with aziridine at different concentrations (0 wt%, 0.05 wt%, 0.09 wt%, 0.1 wt%, 0.3 wt%, 0.5 wt%, and 0.6 wt%) at room temperature and pressure for 45 minutes, and the resulting reactant was gravure-coated on a polyethylene terephthalate substrate layer having a thickness of 25 to 100 μm, and dried with hot air at 35 Hz at 60°C for 20 seconds, 80°C for 20 seconds, and 100°C for 20 seconds to form a conductive layer having a thickness of 0.03 to 3 μm.

[0176] 27 g of polydimethylsiloxane (weight average molecular weight of about 650,000) of chemical formula 1 containing vinyl groups at both ends in a content of 0.2 mmol / g and 3 g of methylhydrosiloxane-dimethylsiloxane copolymer (weight average molecular weight of about 2,500) of chemical formula 2 having a Si-H content of 4 mmol / g were mixed in 70 g of toluene, and 0.005 g of platinum was added thereto as a catalyst, and the mixture was reacted at room temperature and pressure for 200 minutes. The product was slot die-coated on the conductive layer, and dried with hot air at 35 Hz at 60°C for 50 seconds, 110°C for 50 seconds, and 150°C for 50 seconds to form an adhesive layer having a thickness of 15-50 μm.

[0177]

[0178] Test Example 1: Characteristics of semiconductor adhesive film composition

[0179] The horizontal fixing force in the electrostatic chuck (100), the peeling force of the release film layer (240), etc. are determined according to the presence or absence of the conductive layer (220) of the semiconductor adhesive film (200), the stacking order of the conductive layer (220), the composition of the adhesive layer (230), etc.

[0180]

[0181] Comparative Example 1: The semiconductor adhesive film in Comparative Example 1 is formed in the order of a substrate layer, an adhesive layer, and a release film layer, and the substrate layer is formed of a polyolefin series and the adhesive layer is formed of an acrylic series compound.

[0182] Comparative Example 2: The semiconductor adhesive film in Comparative Example 2 is formed in the order of a conductive layer, a substrate layer, a conductive layer, an adhesive layer, and a release film layer, and a plurality of conductive layers are formed in the same manner as in the manufacturing example of the semiconductor adhesive film (200), the substrate layer is formed of polyethylene terephthalate, and the adhesive layer is formed of a silicone-based compound according to the manufacturing example of the semiconductor adhesive film (200).

[0183] Comparative Example 3: The semiconductor adhesive film in Comparative Example 3 is formed in the order of a substrate layer, a conductive layer, an adhesive layer, a release film layer, and a conductive layer, and the conductive layer is formed in the same manner as in the manufacturing example of the semiconductor adhesive film (200), the substrate layer is formed of polyethylene terephthalate, and the adhesive layer is formed of a silicone-based compound according to the manufacturing example of the semiconductor adhesive film (200).

[0184] Example 1: The semiconductor adhesive film in Example 1 was formed as in the manufacturing example of the semiconductor adhesive film (200).

[0185]

[0186] Film characteristics (unit) Comparative example 1 Comparative example 2 Comparative example 3 Example 1 Horizontal fixing force of film when voltage is applied (gf / 150mm) 0 1 2 3 0 2 1 0 2 10 Horizontal fixing force of film when voltage is absent (gf / 150mm) 0 10~1500 Release film peeling force (gf / 25mm) 8.8 0.8~1.1 0.6~0.9 0.9~1.1 Presence or absence of residue when coating layer and adhesive layer are peeled OXXX

[0187] Description of the horizontal holding power of the film (gf / 150mm)

[0188] When voltage is applied to the electrostatic chuck (100), the fixing force of the semiconductor adhesive film (200) in the horizontal direction is measured.

[0189] In Comparative Example 1, since no conductive layer is formed, no horizontal fixing force is generated on the film in the electrostatic chuck (100) even when voltage is applied. Naturally, since there is no conductive layer, no horizontal fixing force is generated even when no voltage is applied.

[0190] In Comparative Example 2, the conductive layer is formed not only between the substrate layer and the adhesive layer, but also on the substrate layer. Therefore, when the voltage of the electrostatic chuck (100) is applied, a strong charge induction is formed in the conductive layer. However, since the conductive layer is formed on the substrate layer and is exposed toward the electrostatic chuck (100), a residual charge remains in the conductive layer even when no voltage is applied, resulting in an unnecessary holding force exceeding 0.1 gf / 150 mm. Therefore, in Comparative Example 2, the film and the wafer cannot be stably separated even when the voltage of the electrostatic chuck is turned off.

[0191] In Comparative Example 3, the conductive layer is formed not only between the substrate layer and the adhesive layer, but also on the release film layer. Since the conductive layer in Comparative Example 3 is not formed close to the electrostatic chuck (100), an appropriate horizontal fixing force of 210 gf / 150 mm is generated even when voltage is applied to the electrostatic chuck (100), and an appropriate horizontal fixing force of 0 gf / 150 mm is generated even when voltage is not applied to the electrostatic chuck (100).

[0192] In Example 1, since the conductive layer is formed between the substrate layer and the adhesive layer, when voltage is applied to the electrostatic chuck (100), an appropriate horizontal fixing force of 210 gf / 150 mm is generated for the horizontal fixing force of the semiconductor adhesive film (200) in the electrostatic chuck (100), and even when voltage is not applied to the electrostatic chuck (100), an appropriate horizontal fixing force of 0 gf / 150 mm is generated.

[0193]

[0194] Description of the peel strength of the release film (gf / 25mm)

[0195] This describes the peeling force that occurs when peeling a release film from an adhesive layer.

[0196] The adhesive layer of Comparative Example 1 is formed of an acrylic compound, and in this case, the release film peeling force exceeds 2.5 gf / 25 mm, which causes a problem in that the film (200) cannot be fixed horizontally in the electrostatic chuck (100) and may shake or vibrate.

[0197] The adhesive layer in Comparative Example 3 is formed of a silicone-based compound, and is characterized by a conductive layer formed on the release film layer. A conductive layer having an additional thickness is formed on the release film layer, and due to the physical properties of the conductive layer, it becomes easier to peel the release film layer from the adhesive layer, and the peeling force is formed to be 0.6 to 0.9 gf / 25 mm. Therefore, there is a possibility that the peeling force between the adhesive layer and the release film layer in Comparative Example 3 may be formed to be less than 0.8 gf / 25 mm, and in this case, the risk of the release film layer being peeled off from the roller that supplies the film to the semiconductor equipment increases.

[0198] In Example 1 and Comparative Example 2, the adhesive layer is formed of a silicone-based compound, and no conductive layer is formed on the release film layer. Therefore, the release film layer peeling force in Example 1 is formed to be 0.9 to 1.1 gf / 25 mm, and the release film layer peeling force in Comparative Example 2 is formed to be 0.8 to 1.1 gf / 25 mm, so that the release film peeling force can be formed between 0.8 and 1.1 gf / 25 mm.

[0199]

[0200] Explanation of whether residue is generated when the coating layer and adhesive layer are peeled off

[0201] In Comparative Example 1, the adhesive layer is formed of an acrylic compound, and when it adheres to and separates from the coating layer, a problem occurs in which the coating layer is peeled off and residue remains.

[0202] In contrast, in Comparative Examples 2 and 3 and Example 1, the adhesive layer is formed of a silicone compound, so there is a low possibility that the coating layer will be detached and residue will remain when it adheres to and separates from the coating layer.

[0203]

[0204] Test Example 2: Characteristics according to adhesive layer material

[0205] Depending on the adhesive strength between the coating layer and the adhesive layer, the phenomenon of the coating layer being peeled off from the wafer or the generation of residue resulting from the reaction between the coating layer and the adhesive layer are tested. In addition, both the case of separation of the coating layer and the adhesive layer during the initial adhesion and the case of separation of the coating layer and the adhesive layer after a certain period of time are tested. Here, the material of the coating layer can be formed of an organic coating agent, and more specifically, materials such as polyvinylpyrrolidone (PVP), polymethyl methacrylate (PMMA), and isopropyl alcohol (IPA) can be applied.

[0206]

[0207] Example 2: The semiconductor adhesive film in Example 2 was formed as in the manufacturing example of the semiconductor adhesive film (200). The adhesive layer was formed of a silicone-based compound.

[0208] Comparative Example 4: The adhesive layer of the semiconductor adhesive film in Comparative Example 4 was formed of a urethane compound.

[0209] Comparative Example 5: The adhesive layer of the semiconductor adhesive film in Comparative Example 5 was formed of an acrylic compound.

[0210]

[0211] Classification Example 2 Comparative Example 4 Comparative Example 5 Adhesion Initial peeling adhesion (gf / 25mm) 0.9 1.8 1.4 Residue XX△ (Stain transfer) Whether the coating layer is peeled XXX Peeling adhesion after 5 days (gf / 25mm) 0.9 2.14.2 Residue X△ (Stain transfer) O (Transfer occurs) Whether the coating layer is peeled XX Peeling Peeling adhesion after 7 days (gf / 25mm) 1.1 3.4 8.8 Residue X△ (Stain transfer) O (Transfer occurs) Whether the coating layer is peeled XX O (Tearing)

[0212] In Table 2, initial peeling refers to the case where the coating layer and the adhesive layer are peeled off 30 minutes after they are adhered.

[0213] The adhesion force between the semiconductor wafer (300) and the coating layer (310) is 2.5 gf / 25 mm. Therefore, if the adhesion force between the coating layer (310) and the adhesive layer (230) is formed to be 2.5 gf / 25 mm or more, the possibility of the coating layer being torn off increases. In addition, the strong adhesion between the coating layer (310) and the adhesive layer (230) may increase the possibility of the coating layer (310) and the adhesive layer (230) reacting with each other to leave residue.

[0214] In the case of Example 2, an adhesive layer is formed with a silicone-based compound, and the initial adhesive strength of the coating layer (310) and the adhesive layer (230) is formed as 0.9 gf / 25 mm when they are adhered. When the adhesive strength (0.9 gf / 25 mm) after 5 days and the adhesive strength (1.1 gf / 25 mm) after 7 days from the time the coating layer (310) and the adhesive layer (230) are adhered are compared with the initial adhesive strength, there is no significant difference. In addition, although the adhesive strength after 7 days is higher than the initial adhesive strength, it does not exceed 2.5 gf / 25 mm. This shows the superiority of the adhesive layer when it is formed with a silicone-based compound. In addition, in the case of Example 2, no problems such as residue generation or coating film peeling occur in any cases such as initial peeling, peeling after 5 days, or peeling after 7 days.

[0215] In the case of Comparative Example 4, the initial adhesive force of the coating layer and the adhesive layer was formed as 1.8 gf / 25mm, whereas the adhesive force after 7 days was formed as 3.4 gf / 25mm, which is nearly twice the initial adhesive force, showing the problem of the adhesive layer made of a urethane compound used in Comparative Example 4. In addition, in Comparative Example 4, the initial peeling of the adhesive did not cause the problem of residue generation or coating film peeling, but in the cases of peeling after 5 days and after 7 days, the residue generated by the reaction of the coating layer and the adhesive layer caused a problem of stains remaining on the wafer.

[0216] In the case of Comparative Example 5, the initial adhesive force of the coating layer and the adhesive layer was formed as 1.4 gf / 25mm, whereas the adhesive force after 7 days was formed as 8.8 gf / 25mm, which is nearly 7 times the initial adhesive force, showing the problem of the adhesive layer made of an acrylic compound used in Comparative Example 5. In addition, in Comparative Example 5, even in the initial peeling of adhesion, stains remain on the wafer due to residues generated by the reaction between the coating layer and the adhesive layer, and in the peeling after 5 days and 7 days, the coating film is peeled off.

[0217]

[0218] Test Example 3: Characteristics according to adhesive force between adhesive layer and coating layer

[0219] Even if the adhesive layer is formed of a silicone compound, if the adhesive force between the adhesive layer and the coating layer exceeds 2.5 gf / 25 mm, residue may be generated or the coating layer may be peeled off when the adhesive layer and the coating layer are peeled off.

[0220] Here, the material of the coating layer can be formed of an organic coating agent, and more specifically, materials such as polyvinylpyrrolidone (PVP), PMMA (Polymethyl Methacrylate), and IPA (isopropyl alcohol) can be applied.

[0221]

[0222] Classification Example 3 Comparative Example 6 Comparative Example 7 Comparative Example 8 Adhesive layer material Silicone compound Silicone compound Silicone compound Silicone compound Adhesive strength (gf / 25mm) 1.5 2.5 3.3 7.0 Adhesion Initial peeling residue XXXO (transfer occurred) Coating layer peeling XXXX Peeling residue after 2 weeks X△ (stain transfer) O (transfer occurred) O (transfer occurred) Coating layer peeling XXXO (peeling)

[0223] In Table 3, initial peeling refers to the case where the coating layer and the adhesive layer are peeled off 30 minutes after they are adhered.

[0224]

[0225] Looking at Example 3, it can be seen that the adhesive force between the adhesive layer (230) and the coating layer (240) made of a silicone compound was formed to be 1.5 gf / 25 mm, and in this case, no residue was left or the coating layer was peeled off, whether when the adhesive layer and the coating layer were peeled off at the initial stage of adhesion or after 2 weeks.

[0226] Looking at Comparative Example 6, it can be seen that the adhesive force between the adhesive layer and the coating layer made of a silicone compound was formed to be 2.5 gf / 25mm, and in this case, when the adhesive layer and the coating layer were peeled off in the initial stage of adhesion, no problem occurred with residue remaining or the coating layer being peeled off. However, when the adhesive layer and the coating layer were peeled off after two weeks of adhesion, stains due to residue generated by the reaction between the coating layer and the adhesive layer remained on the wafer. Comparative Example 6 was formed to have an adhesive force of 2.5 gf / 25mm, and almost no problem with residue or peeling of the coating layer occurred, but when peeled off after two weeks, a problem occurred with very fine residue stains remaining.

[0227] Looking at Comparative Example 7, it can be seen that the adhesive strength between the adhesive layer and the coating layer made of a silicone compound was formed to be 3.3 gf / 25 mm, and in this case, when the adhesive layer and the coating layer were peeled off at the initial stage of adhesion, no problem occurred with residue remaining or the coating layer being peeled off. However, when the adhesive layer and the coating layer were peeled off two weeks after adhesion, a problem occurred in which residue generated by the reaction between the adhesive layer and the coating layer remained on the wafer.

[0228] Comparative Example 8 shows that the adhesive layer and coating layer formed of a silicone compound had an adhesive strength of 7.0 gf / 25 mm. In this case, the adhesive layer and the coating layer reacted, causing residue to remain on the wafer. In addition, when the adhesive layer and the coating layer were peeled off after two weeks of bonding, the coating layer was peeled off.

[0229]

[0230] Test Example 4: Characteristics according to temperature

[0231]

[0232] Examples 4 to 7 each proceed with laminating a semiconductor wafer (300) with an adhesive layer of a semiconductor adhesive film at different temperatures. At this time, the semiconductor adhesive film used in Examples 4 to 7 is formed according to the semiconductor adhesive film manufacturing example mentioned above.

[0233] Classification Example 4 Example 5 Example 6 Example 7 Lamination temperature Room temperature (25 ℃) 50 ℃ 75 ℃ 100 ℃ Adhesion Initial peeling adhesion (gf / 25mm) 1.2 0.9 0.8 1.1 Residue XXXX Coating layer peeling XXXX Peeling adhesion after 14 days (gf / 25mm) 1.2 0.8 1.0 1.2 Residue XXXX Coating layer peeling XXXX

[0234] Looking at Examples 4 to 7, it can be seen that the adhesive strength between the adhesive layer and the coating layer of the film manufactured according to the semiconductor adhesive film manufacturing example is maintained at 0.8 gf / 25 mm or more and less than 2.5 gf / 25 mm, regardless of the temperature in the range of 25°C to 100°C. In addition, regardless of the temperature in the range of 25°C to 100°C, there is no problem of residue being generated or the coating layer being peeled off. Therefore, the semiconductor adhesive film (200) according to one embodiment of the present invention can have the same physical properties under various temperature conditions.

[0235]

[0236] Although the present invention has been described in detail through specific examples, this is intended to specifically explain the present invention, and the present invention is not limited thereto, and it will be apparent that modifications and improvements can be made by those skilled in the art within the technical spirit of the present invention.

[0237] All simple modifications or changes of the present invention fall within the scope of the present invention, and the specific protection scope of the present invention will be made clear by the appended claims.

[0238] [Explanation of symbols]

[0239] 1: System for fixing a semiconductor wafer to an electrostatic chuck

[0240] 100: Static chuck

[0241] 200: Semiconductor adhesive film

[0242] 210: Base layer

[0243] 220: Challenge layer

[0244] 230: Adhesive layer

[0245] 240: Release film layer

[0246] 300: Wafer

[0247] 310: Coating layer

Claims

1. Static electricity; A semiconductor adhesive film comprising a substrate layer, a conductive layer formed on the substrate layer, and an adhesive layer formed on the conductive layer, wherein the substrate layer is fixed to the electrostatic chuck so that the electrostatic chuck faces the substrate layer; and A system comprising a semiconductor wafer adhered to the adhesive layer, and fixing the semiconductor wafer to an electrostatic chuck.

2. In claim 1, A system for fixing a semiconductor wafer to an electrostatic chuck, wherein the adhesive layer of the semiconductor adhesive film is adhered to a coating layer formed on the semiconductor wafer.

3. In claim 1, A system for fixing a semiconductor wafer to an electrostatic chuck, wherein when voltage is applied to the electrostatic chuck, the semiconductor wafer is fixed to the electrostatic chuck, and when voltage is not applied to the electrostatic chuck, the semiconductor wafer is separated from the electrostatic chuck.

4. In claim 1, The above semiconductor adhesive film includes a release film layer formed on the adhesive layer, A system for fixing a semiconductor wafer to an electrostatic chuck, wherein the semiconductor wafer is adhered to the adhesive layer after the release film layer is peeled off from the adhesive layer.

5. In claim 4, In a state where the semiconductor adhesive film is fixed to the electrostatic chuck before the above-mentioned heteromorphic film layer is removed, A system for fixing a semiconductor wafer to an electrostatic chuck, wherein when voltage is applied to the electrostatic chuck, the force with which the electrostatic chuck fixes the semiconductor adhesive film in a horizontal direction is formed to be 200 gf / 150 mm or more, and when voltage is not applied to the electrostatic chuck, the force with which the electrostatic chuck fixes the semiconductor adhesive film in a horizontal direction is formed to be 1 gf / 150 mm or less.

6. In claim 4, A system for fixing a semiconductor wafer to an electrostatic chuck, wherein the magnitude of the force for peeling the release film layer from the adhesive layer in the semiconductor adhesive film is formed to be 0.8 to 1.1 gf / 25 mm.

7. In claim 2, A system for fixing a semiconductor wafer to an electrostatic chuck, wherein the adhesive force formed between the coating layer and the adhesive layer is 0.8 gf / 25 mm or more and less than 2.5 gf / 25 mm.

8. In claim 7, A system for fixing a semiconductor wafer to an electrostatic chuck, characterized in that the adhesive force formed between the coating layer and the adhesive layer is maintained at temperatures from 10 degrees to 110 degrees.

9. In claim 1, A system for fixing a semiconductor wafer to an electrostatic chuck, wherein the Young's modulus value of the semiconductor adhesive film is formed to be 3500 to 4300 N / mm2.

10. In claim 2, The above adhesive layer is, A system for securing a semiconductor wafer containing a silicon-based compound to an electrostatic chuck.

11. In claim 2, The above coating layer is, A system for fixing a semiconductor wafer formed with an organic coating agent to an electrostatic chuck.

12. A method for fixing a semiconductor wafer to an electrostatic chuck by using a semiconductor adhesive film in which a substrate layer, a conductive layer, an adhesive layer, and a release film layer are sequentially laminated, A semiconductor adhesive film fixing step for fixing the semiconductor adhesive film to the electrostatic chuck so that the substrate layer faces the electrostatic chuck after voltage is applied to the electrostatic chuck; A release film layer peeling step for peeling the release film layer from the adhesive layer of the semiconductor adhesive film; and A method for fixing a semiconductor wafer to an electrostatic chuck, comprising: a semiconductor wafer bonding step of bonding the semiconductor wafer to the adhesive layer.

13. In claim 12, An electrostatic chuck separation step for separating the semiconductor wafer and the semiconductor adhesive film together from the electrostatic chuck after the applied voltage from the electrostatic chuck is turned off; and A method for securing a semiconductor wafer to an electrostatic chuck, comprising: a semiconductor wafer peeling step for separating the semiconductor wafer from the adhesive layer.

14. In claim 12 or 13, In the above semiconductor wafer bonding step, A method for fixing a semiconductor wafer to an electrostatic chuck, wherein a coating layer formed on the semiconductor wafer and the adhesive layer adhere to each other.

15. In claim 14, In the above semiconductor wafer peeling step, A method for fixing a semiconductor wafer to an electrostatic chuck, characterized in that the coating layer and the adhesive layer are separated from each other.

16. In claim 12, A method for fixing a semiconductor wafer to an electrostatic chuck, wherein, in the semiconductor adhesive film fixing step, when voltage is applied to the electrostatic chuck, a force with which the electrostatic chuck fixes the semiconductor adhesive film in a horizontal direction is formed to be 200 gf / 150 mm or more.

17. In claim 13, A method for fixing a semiconductor wafer to an electrostatic chuck, wherein, in the electrostatic chuck separation step, when no voltage is applied to the electrostatic chuck, the force with which the electrostatic chuck fixes the semiconductor adhesive film in a horizontal direction is formed to be 1 gf / 150 mm or less.

18. In claim 12, A method for fixing a semiconductor wafer to an electrostatic chuck, wherein, in the step of peeling off the release film layer, the magnitude of the force for peeling off the release film layer from the adhesive layer in the semiconductor adhesive film is formed to be 0.8 to 1.1 gf / 25 mm.

19. In claim 15, A method for fixing a semiconductor wafer to an electrostatic chuck, wherein, in the semiconductor wafer peeling step, the adhesive force formed between the coating layer and the adhesive layer is formed to be 0.8 or more and less than 2.5 gf / 25 mm.

20. In claim 19, A method for fixing a semiconductor wafer to an electrostatic chuck, characterized in that, in the semiconductor wafer peeling step, the adhesive force formed between the coating layer and the adhesive layer is maintained even at 10°C to 110°C.

21. In claim 12, The Young's modulus value of the semiconductor adhesive film after the above-mentioned heteromorphic film layer peeling step is 3500 to 4300 N / mm 2 A method for fixing a semiconductor wafer formed by an electrostatic chuck.

22. In claim 14, The above adhesive layer is, A method for securing a semiconductor wafer comprising a silicon-based compound to an electrostatic chuck.

23. In claim 14, The above coating layer is, A method for securing a semiconductor wafer formed with an organic coating agent to an electrostatic chuck.

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