Electrostatic chuck film
The electrostatic chuck film, with its substrate, conductive, and adhesive layers, addresses the limitations of existing electrostatic chuck technologies by enabling efficient and reliable electrostatic coupling in a vacuum state without external power sources or additional components.
Patent Information
- Application Number
- PCT/KR2024/018959
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2024-07-31
- Filing Date
- 2024-11-27
- Publication Date
- 2025-06-19
AI Technical Summary
Existing electrostatic chuck technologies require external power sources and separate components for electrostatic coupling, which can be cumbersome and may deteriorate the function of the product being handled.
An electrostatic chuck film comprising a substrate layer, a conductive layer with specific electrical properties, and an adhesive layer, allowing for easy pickup and detachment from an electrostatic chuck without the need for external power sources or additional components.
The electrostatic chuck film enables efficient and reliable electrostatic coupling in a vacuum state, allowing for easy attachment and detachment of products like semiconductor wafers without compromising their functionality.
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Figure KR2024018959_19062025_PF_FP_ABST
Abstract
Description
electrostatic chuck film
[0001] The present invention relates to an electrostatic chuck film, and more particularly, to an electrostatic chuck film comprising an adhesive layer formed on a conductive layer, having electrical properties within a predetermined range and a thickness of each layer, one side of which can be picked up by an electrostatic chuck and the opposite side of which can be adhered.
[0002] Typically, adhesive protective films are applied to protect the surface of a product during the manufacturing process. These adhesive protective films are particularly used in display panels, such as liquid crystal panels (LCDs) and plasma display panels (PDPs), which comprise display devices such as mobile phones, computer monitors, TVs, and various billboards, as well as in semiconductor packaging processes.
[0003] Conventionally, most processes utilize pressure to pick up films or products. However, pressure that allows for vacuum-based pickup is not available. Specifically, semiconductor packaging processes operate under vacuum conditions, and conventional methods of picking up films or products in this vacuum utilize adhesive strength. However, this hinders easy attachment and detachment, necessitating specialized structures and features, such as electrostatic chucks.
[0004] Korean Patent No. 2208071 discloses a multilayer structure for electrostatic coupling of a substrate, but has the disadvantage of requiring an external power source and its contacts for charging the metal electrodes.
[0005] Furthermore, for products to be able to pick up using the electrostatic chuck, separate components are required. These components may be unnecessary or may degrade the product's functionality. Therefore, there is a significant industry demand for a pickup device with a new structure and characteristics that can address these issues.
[0006] [Prior Art Literature]
[0007] [Patent Document]
[0008] Patent Document 1: KR 10-2208071 (Fraunhofer Gesellschaft Zur Förderung der Angewandte Forschung E. V.) 2021.01.21.
[0009] The present invention has been devised to solve the above-mentioned problems, and its purpose is to provide an electrostatic chuck film including an adhesive layer formed on a conductive layer, having electrical properties within a predetermined range, one side of which can be picked up by an electrostatic chuck, and the opposite side of which can be adhered.
[0010] The present invention may also aim to achieve other purposes that can be easily derived by a person skilled in the art from the above-mentioned clear purpose and the overall description of the present specification.
[0011] In order to achieve the above-described purpose, the electrostatic chuck film of the present invention
[0012] Substrate layer,
[0013] A conductive layer formed on the above substrate layer, and
[0014] An adhesive layer formed on the above conductive layer
[0015] It is characterized by including.
[0016] And, the above-mentioned substrate layer can be selected from the group consisting of polyethylene terephthalate, polyethylene, polyimide, acrylic resin, cycloolefin polymer, mixtures thereof, and copolymers thereof.
[0017] In addition, the electrostatic chuck film of the present invention may additionally include a release film formed on the adhesive layer.
[0018] In addition, when 1 kV voltage is applied to the electrostatic chuck film, the surface resistance is 1 × 10 11 1 × 10 13 It could be Ω / sq.
[0019] And, when 1 kV voltage is applied to the laminate of the substrate layer and the conductive layer, the surface resistance is 1 × 10 3 1 × 10 7 It could be Ω / sq.
[0020] And, when 1 kV voltage is applied to the adhesive layer, the surface resistance is 1 × 10 13 It can be greater than Ω / sq.
[0021] Additionally, the dielectric loss of the electrostatic chuck film under conditions of 25°C and 10 GHz can be 0.02 to 0.1.
[0022] And, the dielectric loss of the laminate of the substrate layer and the conductive layer under the condition of 25 ℃ 10 GHz can be 0.1 to 0.23.
[0023] And, the dielectric loss of the laminate of the substrate layer and the adhesive layer under the condition of 25 ℃ 10 GHz can be 0.007 to 0.009.
[0024] Additionally, the dielectric constant of the electrostatic chuck film may be 2.8 to 3.3 under conditions of 25°C and 10 GHz.
[0025] And, the dielectric constant of the laminate of the substrate layer and the conductive layer under the condition of 25 ℃ 10 GHz can be 3.0 to 3.5.
[0026] And, the dielectric constant of the laminate of the substrate layer and the adhesive layer under the condition of 25 ℃ 10 GHz can be 2.9 to 3.2.
[0027] In addition, the conductive layer may be selected from the group consisting of poly(3,4-ethylenedioxythiophene) (poly(3,4-ethylenedioxythiophene. PEDOT), poly(3,4-ethylenedioxythiophene) polystyrenesulfonate (poly(3,4-ethylenedioxythiophene) polystyrenesulfonate. PEDOT-PSS), carbon nanotubes (CNT), graphene, indium tin oxide (ITO), silver nanowires, and combinations thereof.
[0028] And, a crosslinking reaction can occur within the above-mentioned challenging layer.
[0029] And, the above-mentioned conductive layer can be formed by crosslinking a mixture of poly(3,4-ethylenedioxythiophene) polystyrene sulfonate and water-dispersed polyurethane with an aziridine compound.
[0030] And, the aziridine compound may be selected from the group consisting of trimethylolpropane tris(2-methyl-1-aziridine)propionate, trimethylolpropane tris[3-(aziridin-1-yl)propionate], pentaerythritol tris[3-(1-aziridinyl)propionate], pentaerythritol tris(2-methyl-1-aziridine propionate), and mixtures thereof.
[0031] And, the weight ratio of polyurethane to poly(3,4-ethylenedioxythiophene) polystyrene sulfonate of the above-mentioned conductive layer may be 1:9, 1.5:8.5 or 3:7.
[0032] And, the weight ratio of the poly(3,4-ethylenedioxythiophene) polystyrene sulfonate and water-dispersed polyurethane mixture and the aziridine compound of the above-mentioned conductive layer may be 100:8 to 63, 100:10 to 63, or 100:12 to 63.
[0033] In addition, the poly(3,4-ethylenedioxythiophene) polystyrene sulfonate and water-dispersed polyurethane mixture of the above-described conductive layer may be a solution dissolved in a solvent selected from the group consisting of water, ethanol, methanol, isopropyl alcohol, and mixtures thereof.
[0034] In addition, the solution may further comprise a stabilizer selected from the group consisting of ethylene glycol, sorbitol and mixtures thereof.
[0035] And, the concentration of the poly(3,4-ethylenedioxythiophene) polystyrenesulfonate and polyurethane mixture dissolved in a solvent selected from the group consisting of water, ethanol, methanol, isopropyl alcohol and mixtures thereof may be 0.8 to 1.2 wt% or 0.8 to 0.9 wt%.
[0036] And, the thickness of the above-mentioned conductive layer may be 0.03 to 3 ㎛.
[0037] Additionally, the adhesive layer may be selected from the group consisting of silicone, acrylic resin, urethane resin, rubber, and combinations thereof.
[0038] And, a curing reaction can occur within the adhesive layer.
[0039] In addition, the adhesive layer may be a compound selected from the group consisting of organopolysiloxane, chlorosilane, alkylalkoxysilane, sulfursilane, aminosilane, epoxysilane, and mixtures thereof containing vinyl groups at both terminals, reacted with silane or a silane derivative.
[0040] And, the reaction of a compound selected from the group consisting of organopolysiloxane, chlorosilane, alkylalkoxysilane, sulfursilane, aminosilane, epoxysilane and mixtures thereof with silane or silane derivative can be catalyzed by platinum.
[0041] And, the above organopolysiloxane is a polydimethylsiloxane containing vinyl groups at both terminals, and the vinyl group content may be 0.02 to 0.2 mmol / g, 0.1 to 0.2 mmol / g, or 0.15 to 0.2 mmol / g.
[0042] And, the silane derivative may have 1 to 2 hydro groups (-H) substituted with alkyl groups having 1 to 2 carbon atoms.
[0043] And, the Si-H content of the silane or silane derivative may be 4 to 16 mmol / g, 4 to 10 mmol / g, or 4 to 5 mmol / g.
[0044] And, the Si-H molar ratio of the silane or silane derivative to the vinyl groups contained at both terminals of the compound selected from the group consisting of organopolysiloxane, chlorosilane, alkylalkoxysilane, sulfursilane, aminosilane, epoxysilane, and mixtures thereof may be 1 to 3.
[0045] And, the thickness of the adhesive layer may be 15 to 50 μm, 18 to 35 μm, or 20 to 25 μm.
[0046] Additionally, the thickness of the substrate layer may be 25 to 100 μm, 33 to 70 μm, or 38 to 50 μm.
[0047] Additionally, the above-mentioned conductive layer can be gravure coated on the substrate layer.
[0048] And, the above-mentioned conductive layer can be dried with hot air at 60 to 100°C or 20 to 35 Hz for 30 to 90 seconds.
[0049] In addition, the adhesive layer can be slot-die coated or comma-coated on the conductive layer.
[0050] And, the adhesive layer can be dried with hot air at 60 to 150°C or 30 to 35 Hz for 90 to 180 seconds.
[0051] According to the problem-solving means of the present invention as discussed above, various effects, including the following, can be expected. However, the present invention is not established only if it exhibits all of the following effects.
[0052] The electrostatic chuck film according to the present invention is manufactured in the order of a substrate layer - conductive layer - adhesive layer, and by appropriately controlling the electrical properties such as surface resistance, dielectric loss and dielectric constant and the thickness of each layer, it can be picked up by an electrostatic chuck in a vacuum state.
[0053] In particular, when the electrostatic chuck film of the present invention is attached to an electrostatic chuck, the opposite surface can be attached to a product such as a semiconductor wafer, and the wafer or the like to which the electrostatic chuck film of the present invention is attached can be easily attached or detached by the electrostatic chuck as needed in a vacuum state, and there is an advantage in that the function of the product is not deteriorated in any way by removing the electrostatic chuck film of the present invention outside of a vacuum state.
[0054] Figure 1 is a cross-sectional view illustrating one embodiment of the present invention.
[0055] Figure 2 is a cross-sectional view illustrating another embodiment of the present invention.
[0056] Hereinafter, preferred embodiments of the present invention will be described in detail.
[0057] However, the following merely exemplifies and details specific embodiments. The present invention is capable of various modifications and takes numerous forms, and is therefore not limited to the specific embodiments exemplified. It should be understood that the present invention encompasses all modifications, equivalents, and alternatives falling within the spirit and technical scope of the present invention.
[0058] Additionally, the following description includes many specific details, such as specific components. However, these are provided to facilitate a more comprehensive understanding of the present invention, and it will be apparent to those skilled in the art that the present invention can be practiced without these specific details. Furthermore, in describing the present invention, if a detailed description of a related, known function or configuration is deemed to unnecessarily obscure the gist of the present invention, such detailed description will be omitted.
[0059] Furthermore, the terminology used in this application is solely for the purpose of describing specific embodiments and is not intended to limit the present invention. Unless otherwise defined, all terms, including technical or scientific terms, used herein have the same meaning as commonly understood by those of ordinary skill in the art to which this invention pertains. Terms defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant technology, and shall not be interpreted in an idealized or overly formal sense unless explicitly defined herein.
[0060] In this application, singular expressions include plural expressions unless the context clearly indicates otherwise.
[0061] In this application, % unless otherwise specified refers to weight %, and molecular weight unless otherwise specified refers to weight average molecular weight.
[0062] In this application, terms such as "first" and "second" may be used to describe various components, but these components should not be limited by these terms. These terms are used solely to distinguish one component from another. For example, without departing from the scope of the present invention, the first component could be referred to as the "second component," and similarly, the second component could also be referred to as the "first component."
[0063] In this application, terms such as “include,” “contain,” or “have” are intended to indicate the presence of features, components (or constituents) described in the specification, but do not mean that one or more other features or components do not exist or cannot be added.
[0064] When an adhesive film capable of being picked up by an electrostatic chuck is attached to a product such as a semiconductor wafer, the film can be easily attached and detached even in a vacuum, and the film can be removed outside of a vacuum to prevent deterioration of the wafer's function. The present invention aims to provide an electrostatic chuck film capable of exhibiting these advantages.
[0065] In order to achieve the purpose described above, the electrostatic chuck film of the present invention is as shown in Fig. 1.
[0066] Substrate layer (10),
[0067] A conductive layer (20) formed on the above substrate layer (10), and
[0068] Adhesive layer (30) formed on the above conductive layer (20)
[0069] The present invention is characterized in that the constituent layers are arranged in the above order.
[0070] And, the above-mentioned substrate layer (10) can be selected from the group consisting of polyethylene terephthalate, polyethylene, polyimide, acrylic resin, cycloolefin polymer, mixtures thereof, and copolymers thereof.
[0071] In addition, the electrostatic chuck film of the present invention may additionally include a release film (40) formed on the adhesive layer (30) as illustrated in FIG. 2.
[0072] In addition, when 1 kV voltage is applied to the electrostatic chuck film, the surface resistance is 1 × 10 11 1 × 10 13 It can be Ω / sq. If it is below the above range, the dielectric loss increases and it cannot function as an electrostatic chuck. Conversely, if it exceeds the above range, the dielectric loss decreases but the mobility of electrons decreases and it cannot function as an electrostatic chuck.
[0073] And, when 1 kV voltage is applied to the laminate of the substrate layer (10) and the conductive layer (20), the surface resistance is 1 × 10 3 1 × 10 7 It can be Ω / sq. If it is below the above range, the dielectric loss increases and it cannot function as an electrostatic chuck. Conversely, if it exceeds the above range, the dielectric loss decreases but the mobility of electrons decreases and it cannot function as an electrostatic chuck.
[0074] And, when 1 kV voltage is applied to the adhesive layer (30), the surface resistance is 1 × 10 13 It can be greater than Ω / sq, 1 ×10 13 If it is less than Ω / sq, the dielectric loss becomes large and it cannot function as an electrostatic chuck.
[0075] In addition, the dielectric loss of the electrostatic chuck film may be 0.02 to 0.1 under the conditions of 25 ℃ and 10 GHz. If it is below the above range, the mobility of electrons is low, and an environment in which positive charges and electrostatic force can be generated in the electrostatic chuck is not created, so it cannot function as an electrostatic chuck. On the other hand, if it exceeds the above range, the mobility of electrons is high, and the loss of negative charges before the electrostatic chuck and electrostatic force are generated is high, so it cannot function as an electrostatic chuck.
[0076] And, under the condition of 25 ℃ 10 GHz, the dielectric loss of the laminate of the base layer and the conductive layer may be 0.1 to 0.23. If it is less than the above range, the dielectric loss may be small, and a problem of not being separated from the electrostatic chuck may occur due to the positive or negative charge of the electrostatic chuck that may remain when the applied voltage of the electrostatic chuck is turned off. On the other hand, if it exceeds the above range, the number of electrons that can combine with the electrostatic chuck may be small, and the electrostatic repulsion force may be reduced or eliminated.
[0077] And, under the condition of 25 ℃ 10 GHz, the dielectric loss of the laminate of the base layer and the adhesive layer may be 0.007 to 0.009. If it is below the above range, the dielectric loss is small, and a problem of not being separated from the electrostatic chuck may occur due to the positive or negative charge of the electrostatic chuck that may remain when the applied voltage of the electrostatic chuck is turned off. On the other hand, if it exceeds the above range, the number of electrons that can combine with the electrostatic chuck is small, and the electrostatic repulsive force may be reduced or disappear.
[0078] In addition, the dielectric constant of the electrostatic chuck film may be 2.8 to 3.3 under conditions of 25°C and 10 GHz. If it is below the above range, the dielectric constant is low, so that electrostatic chucking and electrostatic force cannot be generated. Conversely, if it is above the above range, the dielectric constant is high, so that electron mobility cannot be secured, so that electrostatic chucking and electrostatic force cannot be generated.
[0079] And, under the condition of 25 ℃ 10 GHz, the dielectric constant of the laminate of the substrate layer and the conductive layer may be 3.0 to 3.5. If it is below the above range, the amount of charge that can be stored is small, so the electrostatic repulsion force may be low or absent. On the other hand, if it exceeds the above range, the amount of charge that can be stored is large, so that even when the applied voltage is turned off, the problem of not being separated from the electrostatic chuck or being attracted to the electrostatic chuck may occur.
[0080] And, under the condition of 25 ℃ 10 GHz, the dielectric constant of the laminate of the substrate layer and the adhesive layer may be 2.9 to 3.2. If it is below the above range, the amount of charge that can be stored is small, so the electrostatic repulsion force may be low or absent. On the other hand, if it exceeds the above range, the amount of charge that can be stored is large, so that even when the applied voltage is turned off, the problem of not being separated from the electrostatic chuck or being attracted to the electrostatic chuck may occur.
[0081] The main feature of the present invention is that it enables pickup as an electrostatic chuck by precisely controlling the electrical properties such as surface resistance, dielectric loss or dielectric constant of each layer and the electrostatic chuck film combining them.
[0082] In addition, the conductive layer (20) may be selected from the group consisting of poly(3,4-ethylenedioxythiophene) (poly(3,4-ethylenedioxythiophene. PEDOT), poly(3,4-ethylenedioxythiophene) polystyrenesulfonate (poly(3,4-ethylenedioxythiophene) polystyrenesulfonate. PEDOT-PSS), carbon nanotubes (CNT), graphene, indium tin oxide (ITO), silver nanowires, and combinations thereof. The conductive layer (20) constituting the present invention is characterized in that it essentially requires transparency in addition to the electrical properties described above.
[0083] In addition, when forming an adhesive layer (30) on a conductive layer (20) in the electrostatic chuck film of the present invention, a portion of the conductive layer (20) may be removed by a solvent that dissolves the materials constituting the adhesive layer (30). This occurs when slot die coating or comma coating is performed to form the adhesive layer (30) with a predetermined thickness, and to prevent this, it is necessary to improve the solvent resistance of the conductive layer (20).
[0084] In order to improve the above content properties, a crosslinking reaction can be induced by inducing a reaction between functional groups in the constituent materials of the conductive layer (20) or by introducing a separate crosslinking agent.
[0085] For example, when the conductive layer (20) of the present invention is a mixture of poly(3,4-ethylenedioxythiophene) polystyrene sulfonate and water-dispersed polyurethane, an aziridine compound may be introduced as a crosslinking agent to cause a crosslinking reaction.
[0086] And, the aziridine compound may be selected from the group consisting of trimethylolpropane tris(2-methyl-1-aziridine)propionate, trimethylolpropane tris[3-(aziridin-1-yl)propionate], pentaerythritol tris[3-(1-aziridinyl)propionate], pentaerythritol tris(2-methyl-1-aziridine propionate), and mixtures thereof.
[0087] And, the weight ratio of polyurethane to poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT-PSS) of the conductive layer (20) may be 1:9, 1.5:8.5, or 3:7. If the PEDOT-PSS content is less than the above range, the surface resistance, dielectric loss, and dielectric constant conditions that can function as an electrostatic chuck cannot be satisfied, and conversely, if it exceeds the above range, the physical properties can be satisfied, but since the polyurethane is insufficient to sufficiently crosslink with the aziridine crosslinking agent, not only is the solvent resistance not secured, but it is also not desirable from an economical perspective.
[0088] And, the weight ratio of the poly(3,4-ethylenedioxythiophene) polystyrene sulfonate and water-dispersed polyurethane mixture of the conductive layer (20) and the aziridine compound may be 100:8 to 63, 100:10 to 63, or 100:12 to 63. If the weight ratio of the aziridine compound is less than the above range, the carboxyl group of the water-dispersed polyurethane is not sufficiently crosslinked, so the solvent resistance is not secured. On the other hand, if it exceeds the above range, the unreacted aziridine compound may migrate to the surface depending on time and temperature, which is economically undesirable.
[0089] In addition, the poly(3,4-ethylenedioxythiophene) polystyrene sulfonate and water-dispersed polyurethane mixture of the above-described conductive layer (20) may be a solution dissolved in a solvent selected from the group consisting of water, ethanol, methanol, isopropyl alcohol, and mixtures thereof.
[0090] In addition, the solution may further comprise a stabilizer selected from the group consisting of ethylene glycol, sorbitol and mixtures thereof.
[0091] And, the concentration of the poly(3,4-ethylenedioxythiophene) polystyrene sulfonate and polyurethane mixture dissolved in a solvent selected from the group consisting of water, ethanol, methanol, isopropyl alcohol and mixtures thereof may be 0.8 to 1.2 wt% or 0.8 to 0.9 wt%. If the concentration of the solution is less than the above range, the particles of PEDOT-PSS may come out to the surface, which may cause coating lines on the coating surface, and on the contrary, if it exceeds the above range, the solid content may decrease, which may increase the wet thickness, and the surface may become uneven due to the fluidity of the coating solution on the coating surface.
[0092] And, the thickness of the conductive layer (20) may be 0.03 to 3 ㎛. If the thickness of the conductive layer is less than the above range, the surface resistance becomes high and the dielectric loss becomes low, so that it may not function as an electrostatic chuck. Conversely, if the thickness of the conductive layer exceeds the above range, the surface resistance becomes low and the dielectric loss becomes high, so that it may not function as an electrostatic chuck.
[0093] In addition, the adhesive layer (30) may be selected from the group consisting of silicone, acrylic resin, urethane resin, rubber, and combinations thereof.
[0094] In addition, the adhesive layer (30) may be a compound selected from the group consisting of organopolysiloxane, chlorosilane, alkylalkoxysilane, sulfursilane, aminosilane, epoxysilane, and mixtures thereof containing vinyl groups at both ends, reacted with silane or a silane derivative, and at this time, platinum is preferably used as a catalyst. The present invention is particularly characterized by applying a step of performing an addition reaction (curing) to increase the degree of curing and lower the dielectric constant.
[0095] And, the above-mentioned organopolysiloxane is a polydimethylsiloxane containing vinyl groups at both terminals, and its molecular weight is a weight average molecular weight of 600,000 to 700,000, a number average molecular weight of 300,000 to 400,000, and the vinyl group content may be 0.02 to 0.2 mmol / g, 0.1 to 0.2 mmol / g, or 0.15 to 0.2 mmol / g. If the vinyl group content is less than the above range, it may not function as an electrostatic chuck as the dielectric loss value increases due to insufficient crosslinking with Si-H, and conversely, if it exceeds the above range, the crosslinking density with Si-H increases, the dielectric loss value decreases, and thus it may not function as an electrostatic chuck.
[0096] And, the silane derivative may have 1 to 2 hydro groups (-H) substituted with alkyl groups having 1 to 2 carbon atoms.
[0097] In addition, the Si-H content of the silane or silane derivative may be 4 to 16 mmol / g, 4 to 10 mmol / g, or 4 to 5 mmol / g. If the Si-H content is less than the above range, the vinyl group may not be sufficiently cross-linked, which may increase the dielectric loss. Conversely, if the Si-H content exceeds the above range, unreacted Si-H groups may be generated and migrate to the surface of the adhesive layer.
[0098] Preferably, the silane or silane derivative may be a hydrogen siloxane copolymer in which 1 to 2 hydrogen groups (-H) are substituted with alkyl groups having 1 to 2 carbon atoms. More preferably, the silane or silane derivative may be an alkylhydrosiloxane-dialkylsiloxane copolymer, and more preferably, a methylhydrosiloxane-dimethylsiloxane copolymer.
[0099] And, the Si-H molar ratio (Si-H / vinyl) of the silane or silane derivative to the vinyl groups contained at both ends of the compound selected from the group consisting of organopolysiloxane, chlorosilane, alkylalkoxysilane, sulfursilane, aminosilane, epoxysilane and mixtures thereof may be 1 to 3. If the Si-H / vinyl molar ratio exceeds the above range, the crosslinking density increases, but an out-gassing phenomenon occurs due to hydrogen gas generated when the Si-H that has not reacted with the vinyl increases, and on the contrary, if it is below the above range, the crosslinking points with the vinyl decrease, so that the crosslinking density and dielectric constant decrease, and the dielectric loss increases, so that the compound cannot function as an electrostatic chuck.
[0100] And, the thickness of the adhesive layer (30) may be 15 to 50 ㎛, 18 to 35 ㎛, or 20 to 25 ㎛. If the thickness of the adhesive layer (30) is less than the above range, the dielectric loss increases and it may not function as an electrostatic chuck, and conversely, if it exceeds the above range, the dielectric loss decreases and it may not function as an electrostatic chuck.
[0101] In addition, the thickness of the substrate layer (10) may be 25 to 100 ㎛, 33 to 70 ㎛, or 38 to 50 ㎛. If the thickness of the substrate layer (10) is less than the above range, wrinkles may occur due to shrinkage during the heat process during coating, resulting in an undesirable appearance. Conversely, if the thickness exceeds the above range, the dielectric loss may be low, resulting in failure to function as an electrostatic chuck.
[0102] The main feature of the present invention is that it can function as an electrostatic chuck by precisely controlling the thickness of each layer that constitutes it.
[0103] Additionally, the above-mentioned conductive layer (20) can be gravure coated on the substrate layer (10).
[0104] In addition, the conductive layer (20) can be dried with hot air at 60 to 100°C or 20 to 35 Hz for 30 to 90 seconds. If the drying time or drying temperature is below the above range, drying is insufficient, and curing or solvent volatilization is not completely achieved, which may affect electrical properties such as dielectric constant.
[0105] In addition, the adhesive layer (30) can be slot-die coated or comma-coated on the conductive layer (20).
[0106] In addition, the adhesive layer (20) can be dried with hot air at 60 to 150°C or 30 to 35 Hz for 90 to 180 seconds. If the drying time or drying temperature is below the above range, drying is insufficient, so that curing or solvent volatilization is not completely achieved, which may affect electrical properties such as dielectric constant.
[0107] Hereinafter, embodiments of the present invention will be described.
[0108] Example
[0109] Manufacturing example: conductive layer
[0110] A 0.8 wt% aqueous solution of a mixture of poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT-PSS) and a water-dispersed polyurethane (PEDOT-PSS:polyurethane = 1:9 wt) was cross-linked with different concentrations (0 wt%, 0.05 wt%, 0.09 wt%, 0.1 wt%, 0.3 wt%, 0.5 wt% and 0.6 wt%) of pentaerythritol tris[3-(1-aziridinyl)propionate] at room temperature and pressure for 45 minutes, and the resulting reaction product was gravure-coated on a 50 μm thick polyethylene terephthalate substrate layer, and annealed at 60°C for 20 seconds, 80°C for 20 seconds and 100°C for 20 seconds. A conductive layer with a thickness of 0.03 ㎛ was formed by drying with 35 Hz hot air for 20 seconds.
[0111] Test Example 1: Content resistance of the challenge layer
[0112] When the applied voltage was 1 kV, the surface resistance of the conductive layer of the above manufacturing example was measured with a surface resistance meter (Wolfgang, Germany). A microfiber cloth soaked in methyl ethyl ketone (MEK) or ethanol was wrapped around an 800 g steel rod and brought into contact with the surface of the conductive layer. A 300 g weight was placed on the steel rod and rubbed 15 cm in one direction, repeating 3, 5, 7, 10, 15, and 20 times, respectively. Then, when the applied voltage was 1 kV, the surface resistance of the conductive layer was measured with a surface resistance meter (Wolfgang, Germany). The results are shown in Table 1.
[0113] Surface resistance (Ω / sq) Aziridine concentration (wt%) Solvent number 00.050.090.10.30.50.6--3.44ⅹ10 5 2.31ⅹ10 5 3.11ⅹ10 5 4.16ⅹ10 5 3.41ⅹ10 5 3.12ⅹ10 5 NGMEK36.82ⅹ10 7 5.33ⅹ10 5 4.18ⅹ10 5 6.12ⅹ10 5 5.41ⅹ10 5 4.16ⅹ10 5 ethanol 38.43ⅹ10 6 5.72ⅹ10 5 3.84ⅹ10 5 6.55ⅹ10 5 5.62ⅹ10 5 3.54ⅹ10 5 55.23ⅹ10 7 8.81ⅹ10 5 4.21ⅹ10 5 5.26ⅹ10 5 4.98ⅹ10 5 3.89ⅹ10 5 73.34ⅹ10 9 1.24ⅹ10 7 4.82ⅹ10 6 8.21ⅹ10 5 5.82ⅹ10 5 6.52ⅹ10 5105.39ⅹ10 10 6.39ⅹ10 5 5.69ⅹ10 6 7.42ⅹ10 5 6.11ⅹ10 5 6.51ⅹ10 5 155.51ⅹ10 11 3.21ⅹ10 11 5.66ⅹ10 7 9.24ⅹ10 5 6.89ⅹ10 5 6.89ⅹ10 5 209.91ⅹ10 12 8.81ⅹ10 12 8.23ⅹ10 9 4.29ⅹ10 6 4.83ⅹ10 6 1.32ⅹ10 6
[0114] In Table 1 above, when the concentration of pentaerythritol tris[3-(1-aziridinyl)propionate] was 0.6 wt%, gelation occurred on the surface and the appearance was poor. As a result of the test, it was determined that the concentration of pentaerythritol tris[3-(1-aziridinyl)propionate] was 0.1 to 0.5 wt%, and the surface resistance was maintained low even after repeated rubbing with a solvent, indicating that the composition had solvent resistance.
[0115] Examples 1 to 8 and Comparative Examples 1 and 2: Conductive layer + adhesive layer
[0116] 27 g of polydimethylsiloxane (weight average molecular weight 650,000) containing vinyl groups at both ends with a content of 0.2 mmol / g and 3 g of methylhydrosiloxane-dimethylsiloxane copolymer (weight average molecular weight about 2,500) having a Si-H content of 4 mmol / g were reacted at room temperature and pressure for 200 minutes in the presence of a 0.5 g / kg platinum aqueous solution in 9.5 g / kg toluene as a catalyst, and the product was slot die-coated on the conductive layer of the above-mentioned manufacturing example, and dried with 35 Hz hot air at 60°C for 50 seconds, 110°C for 50 seconds, and 150°C for 50 seconds to form an adhesive layer having a thickness of 20 μm (Example 1). The thickness of the above conductive layer was changed to 0.02 µm (Comparative Example 1), 0.09 µm (Example 2), 0.15 µm (Example 3), 0.3 µm (Example 4), 0.9 µm (Example 5), 1.5 µm (Example 6), 2 µm (Example 7), 3 µm (Example 8), or 3.4 µm (Comparative Example 2), and an adhesive layer was formed.
[0117] Test Example 2: Change in surface resistance according to the thickness of the conductive layer
[0118] When the Si-H / vinyl group molar ratio was 2 and the applied voltage was 1 kV, the surface resistance of Examples 1 to 8 and Comparative Examples 1 and 2 was measured using a surface resistance meter (Mitsubishi Chemical, Japan). The results are shown in Table 2.
[0119] Conductive layer thickness (㎛) Surface resistance (Ω / sq) Comparison example 10.021.32ⅹ10 13 Example 10.037.54ⅹ10 12 Example 20.094.13ⅹ10 12 Example 30.151.39ⅹ10 12 Example 40.39.81ⅹ10 11 Example 50.98.84ⅹ10 11 Example 61.55.93ⅹ10 11 Example 724.39ⅹ10 11 Example 833.82ⅹ10 11 Comparative example 23.42.83ⅹ10 10
[0120] The test results show that when the thickness of the conductive layer is 0.03 to 0.3 ㎛, the surface resistance value is the target 1 × 10 11 1 × 10 13 It was confirmed to have a range of Ω / sq.
[0121] Test Example 3: Changes in electrical properties according to the molar ratio of Si-H / vinyl groups
[0122] When the Si-H molar ratio of methylsilane to vinyl groups contained at both ends of the polydimethylsiloxane of Example 1 above was changed to 0.5 (Comparative Example 3), 1 (Example 9), 3 (Example 10), or 4 (Comparative Example 4), the surface resistance was measured with a surface resistance meter (Mitsubishi Chemical, Japan), and the changes in dielectric loss and dielectric constant at 10 GHz were measured with a dielectric meter (Keysight, USA). After confirming whether it functioned as an electrostatic chuck, the results are shown in Table 3.
[0123] Comparative Example 3 Example 9 Example 10 Comparative Example 4 Si-H / Vinyl molar ratio 0.5134 Surface resistance (Ω / sq) 1.13ⅹ10 12 4.43ⅹ10 11 5.21ⅹ10 12 7.23ⅹ10 12 Dielectric loss 0.05 20.04 30.03 20.018 Dielectric constant 3.5 3.2 2.8 9 2.75 Electrostatic dissipation Impossible Possible Possible Impossible
[0124] The test results confirmed that when the molar ratio of Si-H / vinyl groups was 1 to 3, the dielectric loss value and dielectric constant value had the target ranges of 0.02 to 0.1 and 2.8 to 3.3, respectively.
[0125] Test Example 4: Changes in electrical properties according to changes in layer order
[0126] The same process as Example 1 was followed, but the adhesive layer was formed under the substrate layer instead of on the conductive layer (Comparative Example 5), or after manufacturing as in Example 1, one more conductive layer was formed under the substrate layer (Comparative Example 6). Then, the change in dielectric loss and dielectric constant at 10 GHz was measured using a dielectric measuring device (Keysight, USA), and whether it functioned as an electrostatic chuck was confirmed, which is shown in Table 4. At this time, the Si-H / vinyl group molar ratio was 2, and the thickness of the conductive layer was 0.3 ㎛.
[0127] Comparative Example 5 Comparative Example 6 Example 11 Layer Sequence Challenge / Substrate / Adhesion Challenge / Substrate / Challenge / Adhesion Substrate / Challenge / Adhesion Dielectric Loss 0.127 0.133 0.084 Dielectric Constant 3.31 3.33 3.15 Electrostatic Discharge Impossible Impossible Possible
[0128] The test results confirmed that only when the substrate layer-conductive layer-adhesive layer were manufactured in that order did the dielectric loss value and dielectric constant value have the target ranges of 0.02 to 0.1 and 2.8 to 3.3, respectively.
[0129] While the preferred embodiments of the present invention have been described above, the present invention is not limited to the specific embodiments described above, and those skilled in the art will readily appreciate that various modifications and variations can be made without departing from the spirit and scope of the present invention. Therefore, the scope of the present invention should not be construed as being limited to the above embodiments, but should be defined not only by the claims set forth below but also by equivalents thereof.
[0130] [Explanation of symbols]
[0131] 10: Base layer 20: Conductive layer
[0132] 30: Adhesive layer 40: Release film
Claims
1. Base layer, A conductive layer formed on the above substrate layer, and Adhesive layer formed on the above-mentioned challenging layer Including, Electrostatic chuck film.
2. In claim 1, Characterized in that it additionally includes a release film formed on the adhesive layer. Electrostatic chuck film.
3. In claim 1, When 1 kV voltage is applied to the above electrostatic chuck film, the surface resistance is 1 × 10 11 Inside 1 × 10 13 characterized by Ω / sq, Electrostatic chuck film.
4. In claim 1, The above electrostatic chuck film is characterized in that when a voltage of 1 kV is applied, the dielectric loss is 0.02 to 0.
1. Electrostatic chuck film.
5. In claim 1, The electrostatic chuck film is characterized in that the dielectric constant is 2.8 to 3.3 when 1 kV voltage is applied. Electrostatic chuck film.
6. In claim 1, The above-mentioned conductive layer is characterized by being selected from the group consisting of poly(3,4-ethylenedioxythiophene) (poly(3,4-ethylenedioxythiophene. PEDOT), poly(3,4-ethylenedioxythiophene) polystyrenesulfonate (poly(3,4-ethylenedioxythiophene) polystyrenesulfonate. PEDOT-PSS), carbon nanotubes (CNT), graphene, indium tin oxide (ITO), silver nanowires, and combinations thereof. Electrostatic chuck film.
7. In claim 1, The adhesive layer is characterized in that it is selected from the group consisting of silicone, acrylic resin, urethane resin, rubber, and combinations thereof. Electrostatic chuck film.
8. In claim 1, The thickness of the above-mentioned substrate layer is characterized by being 25 to 100 ㎛, 33 to 70 ㎛ or 38 to 50 ㎛. Electrostatic chuck film.
Citation Information
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