Substrate processing device

Abstract

A substrate processing device comprising one or more chambers is disclosed. The substrate processing device comprises one or more chambers, wherein the chambers include a gas stagnation space, and the gas stagnation space includes: an upper gas flow control surface including one or more upper gas flow paths; a middle gas flow control surface including one or more middle gas flow paths; a lower gas flow control surface including one or more lower gas flow paths; and a plurality of partial stagnation spaces defined by the upper gas flow control surface, the middle gas flow control surface and the lower gas flow control surface.

Description

Substrate processing device

[0001] The present invention relates to a substrate processing device, and more specifically, to a reflow device that electrically connects a device and a substrate through soldering.

[0002] The reflow process is a process used in semiconductor manufacturing to electrically bond devices to a substrate by melting solder balls on the substrate. Semiconductor manufacturers install reflow equipment in their post-processing lines to perform packaging.

[0003] The purpose of the present invention is to provide a novel substrate processing device not previously known.

[0004] A substrate processing apparatus including one or more chambers according to one embodiment of the present invention, wherein the chamber includes a gas stagnation space, and the gas stagnation space may include an upper gas flow control surface including one or more upper gas channels; a middle gas flow control surface including one or more middle gas channels; a lower gas flow control surface including one or more lower gas channels; and a plurality of partial stagnation spaces defined by the upper gas flow control surface, the middle gas flow control surface, and the lower gas flow control surface.

[0005] Additionally, the gas stagnation space may be characterized in that the gas inflow amount of the gas stagnation space or the partial stagnation space is configured to be greater than the gas discharge amount.

[0006] In addition, the gas stagnation space may be characterized in that the total cross-sectional area of ​​the upper gas passage or the number of upper gas passages is greater than the total cross-sectional area of ​​the central gas passage or the number of central gas passages, and the total cross-sectional area of ​​the central gas passage or the number of central gas passages may be characterized in that the total cross-sectional area of ​​the lower gas passage or the number of lower gas passages is greater than the total cross-sectional area of ​​the lower gas passage or the number of lower gas passages.

[0007] Additionally, the upper gas path may be characterized by being distributed across the upper gas flow control surface.

[0008] Additionally, the upper gas path may be characterized by being uniformly distributed on the upper gas flow control surface.

[0009] Additionally, the central gas path or the lower gas path may be characterized in that it is formed at the edge of the central gas flow control surface or the lower gas flow control surface.

[0010] Additionally, the central gas path or the lower gas path may be characterized in that the distance between the center of the gas flow control surface and the center of the gas path is greater than half the radius of the gas flow control surface.

[0011] Additionally, the lower gas path may be characterized by having a slope with respect to the cross-section of the lower gas flow control surface.

[0012] Additionally, the lower gas path may be characterized in that it is formed closer to the center of the chamber cross-section than the central gas path.

[0013] In addition, the substrate processing device may further include a heating means, and the heating means may be characterized in that it heats the gas stagnation space through at least a part of the chamber side or the gas flow control surface.

[0014] Additionally, the heating means may be characterized by being adjacent to or included in at least a portion of the chamber side or gas flow control surface.

[0015] According to one embodiment of the present invention, the uniformity of substrate processing can be improved.

[0016] According to one embodiment of the present invention, a gas supplied into a chamber of a substrate processing device can be sufficiently heated to a level necessary for processing the substrate while stagnating in a stagnation space before being provided to the substrate.

[0017] FIG. 1 is a drawing exemplarily illustrating a substrate processing device according to one embodiment of the present invention.

[0018] FIG. 2 is a cross-sectional view of a gas stagnation space of a substrate processing device according to one embodiment of the present invention.

[0019] Figure 3 is a conceptual diagram showing a gas flow control surface according to one embodiment of the present invention.

[0020] Figure 4 is a conceptual diagram showing a chamber of a substrate processing device according to one embodiment of the present invention.

[0021] Figure 5 is a conceptual diagram showing a substrate processing device according to one embodiment of the present invention.

[0022] Figure 6 is a conceptual diagram showing a gas inlet and a gas outlet of a chamber according to one embodiment of the present invention.

[0023] Other advantages and features of the present invention, and methods for achieving them, will become clearer with reference to the embodiments described below in detail with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but can be implemented in various different forms. The present embodiments are provided solely to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the invention, and the present invention is defined solely by the scope of the claims.

[0024] Even if not defined, all terms (including technical or scientific terms) used herein have the same meaning as commonly accepted by the art in the prior art to which this invention pertains. Terms defined by common dictionaries are to be interpreted as having the same meaning as they have in the relevant art and / or the text of this application, and even if they are not explicitly defined herein, they will not be conceptualized or overly formalized.

[0025] The terminology used herein is for the purpose of describing embodiments only and is not intended to be limiting of the present invention. As used herein, the singular also includes the plural unless specifically stated otherwise. As used herein, the word "comprises" and / or various conjugations of this verb, such as "comprises," "comprising," "comprises," "comprising," and the like, do not exclude the presence or addition of one or more other compositions, components, components, steps, operations, and / or elements. The term "and / or" as used herein refers to each of the listed components or various combinations thereof.

[0026] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings attached to this specification.

[0027] A substrate processing device according to one embodiment of the present invention is a device that performs heat treatment while supplying gas to a substrate, and may include, but is not limited to, a reflow device, for example.

[0028]

[0029] FIG. 1 is a drawing exemplarily illustrating a substrate processing device according to one embodiment of the present invention.

[0030] Referring to FIG. 1, a substrate processing apparatus according to some embodiments of the present disclosure may include a chamber (100), a gas stagnation space (200), and a gas control unit (300).

[0031] A chamber (100) according to some embodiments of the present disclosure may be a space in which a heat treatment is performed on a substrate. In some embodiments, the substrate on which the heat treatment is performed may include a wafer. In some embodiments, the chamber (100) may include one or more inlet channels and inlets for introducing a heated gas, and one or more outlets and outlet channels for discharging the introduced gas. In addition, the chamber (100) according to some embodiments of the present disclosure may include a gas stagnation space (200) for sufficiently heating a gas for performing the heat treatment.

[0032] Referring again to FIG. 1, a substrate processing apparatus according to some embodiments of the present disclosure may include a plurality of chambers (100). In some embodiments, a substrate may be heat treated while sequentially moving through the plurality of chambers (100). In one embodiment, a separate heat treatment step may be performed in each of the plurality of chambers (100). Such heat treatment steps may include removing moisture and air, removing oxygen, melting solder balls, and / or cooling.

[0033] Additionally, several chambers according to some embodiments of the present disclosure may be connected to a gas control unit (300) to supply gas for heat treatment or discharge gas used in heat treatment. As will be described later with reference to FIGS. 4 to 6 , the chamber (100) according to some embodiments of the present disclosure may be connected to the gas control unit (300) through one or more gas discharge ports located at the edge of the chamber (100) and gas discharge channels connected thereto. Preferably, the gas may be smoothly introduced and discharged without creating a vacuum or reduced pressure inside the chamber (100) through the gas control unit (300).

[0034] The chamber (100) illustrated in FIG. 1 may include a gas stagnation space (200). In some embodiments, the gas stagnation space (200) may be a space for stagnating the flow of gas for performing heat treatment of a substrate, thereby sufficiently heating the gas. Preferably, as described later in FIGS. 2 and 3 , the gas stagnation space (200) may be configured to include one or more gas flow control surfaces so that the introduced gas can remain in the stagnation space (200) for a long period of time and be heated.

[0035] In some embodiments, the gas stagnation space (200) may be connected to the gas inlet channel and gas inlet of the chamber (100). In some embodiments, the gas stagnation space (200) may be connected to a plurality of gas inlets of the chamber (100). In one embodiment, gas introduced through the gas inlets may pass through one or more gas flow control surfaces and be introduced into the gas stagnation space (200). Furthermore, in some embodiments, the gas stagnation space (200) may be divided into a plurality of partial stagnation spaces to further control the gas flow. This will be described in detail later with reference to FIG. 2.

[0036] Referring to FIG. 1, a substrate processing apparatus according to some embodiments of the present disclosure may include a gas control unit (300). In some embodiments, the gas control unit (300) may be a module that supplies gas to a plurality of chambers (100) and a gas stagnation space (200) configured in the chambers, and recovers the supplied gas. In some embodiments, the gas control unit (300) may include a gas inlet channel and a gas discharge channel, and may include a sensor and a pump for controlling the flow of air within the chambers (100).

[0037] In one embodiment, the sensor and pump for controlling the flow of air within the chamber (100) may include an inlet pump and / or a suction pump for maintaining the chamber (100) in a vacuum or reduced pressure state. Preferably, in order to control the flow of air within the chamber (100), the gas control unit (300) may be provided with a pressure sensor and a valve, thereby generating and controlling the flow of air by detecting and controlling the pressure within the chamber (100). In this case, more preferably, the gas control unit (300) may not include a suction pump. Specific details regarding this will be described later with reference to FIGS. 5 and 6.

[0038]

[0039] FIG. 2 is a cross-sectional view of a gas stagnation space of a substrate processing device according to one embodiment of the present invention.

[0040] As illustrated in FIG. 1, a chamber according to one embodiment of the present invention has a gas stagnation space (200) configured to allow gas to remain before being supplied into the chamber and provided to the substrate.

[0041] In some embodiments, the gas supplied into the chamber may remain in the gas stagnation space (200) before being provided to the substrate introduced into the chamber and then heated by a heating means (250), such as an adjacent heater, before being provided to the substrate.

[0042] Thus, according to one embodiment of the present invention, before the gas is provided to the substrate, it can be heated more sufficiently by a heating means (250) located around it while remaining in a plurality of partial stagnation spaces (241, 242) and then provided to the substrate. In the structure of the partial stagnation spaces and the gas flow control surfaces and / or flow paths illustrated in FIG. 2, the flow of gas formed in each partial stagnation space (241, 242) is illustrated by a dotted line.

[0043] A gas stagnation space (200) according to some embodiments of the present disclosure may have one or more gas flow control surfaces therein. In some embodiments, the gas flow control surface may be a plane having a uniform or non-uniform thickness that includes or is connected to one or more flow paths. As illustrated in FIG. 2 , the gas flow control surface may have a through hole to form a gas flow path therethrough, or may form a flow path through which gas flows through the through hole and a passage connected to the through hole. That is, in one embodiment, a gas flow path formed on the gas flow control surface may include a through hole penetrating the gas flow control surface and / or a passage connected to the through hole to form a gas flow. The gas flow control surface illustrated in FIG. 2 may include an upper gas flow control surface (210), a middle gas flow control surface (220), and / or a lower gas flow control surface (230). As a result, the gas stagnation space (200) may be divided into two partial stagnation spaces. However, the multiple gas flow control surfaces and the partial stagnation spaces defined thereby illustrated in FIG. 2 are merely exemplary, and a greater number of gas flow control surfaces and partial stagnation spaces than those illustrated in FIG. 2 may be included within the gas stagnation space (200). Preferably, the gas stagnation space (200) and / or the partial stagnation spaces (241, 242) may be configured such that the amount of gas flowing into the space is greater than the amount of gas discharged from the space. A specific description thereof will be given below with reference to FIGS. 2 and 3.

[0044] In some embodiments, each gas flow control surface may be configured differently. For example, each gas flow control surface may differ from the others in the number of channels configured in the gas flow control surface, the location of the channels on the gas flow control surface, the size of the channels, the cross-sectional area of ​​individual channels, the total cross-sectional area of ​​the channels included in or connected to the gas flow control surface, and / or the angle at which the channels are formed. In a preferred embodiment, the number of channels configured in the gas flow control surface, the cross-sectional area of ​​each channel, and / or the total cross-sectional area of ​​the channels configured in the gas flow control surface may be greater in the upper gas flow control surface (210) than in the middle gas flow control surface (220), and the middle gas flow control surface (220) may be greater than in the lower gas flow control surface (230). In one embodiment, when there is at least one central gas flow control surface (220) between the upper gas flow control surface (220) and the lower gas flow control surface (230), the closer the gas flow control surface is to the upper gas flow control surface (210), the larger the number of passages formed in the gas flow control surface, the larger the cross-sectional area of ​​each passage, and / or the larger the total cross-sectional area of ​​the passages formed within the gas flow control surface. Through this, the gas can remain for a longer time within the partial stagnation space (241, 242), and thus, the heating of the gas by the heating means (250) can be performed more effectively.

[0045] A gas stagnation space (200) according to some embodiments of the present disclosure may include an upper gas flow control surface (210). In some embodiments, the upper gas flow control surface (210) may be an uppermost gas flow control surface among three or more gas flow control surfaces included in the gas stagnation space (200). In a specific embodiment, the upper gas flow control surface (210) may be an uppermost gas flow control surface among a plurality of gas flow control surfaces included in the gas stagnation space (200). In some embodiments, the upper gas flow control surface (210) may allow gas introduced into a gas inlet to move through a flow path included and / or connected to the gas stagnation space (200). In some embodiments, the gas flow path formed in the upper gas flow control surface (210) may be configured to be inclined with respect to a cross-section of the upper gas flow control surface (210). In another embodiment, the gas flow path formed in the upper gas flow control surface (210) may be configured to be perpendicular with respect to a cross-section of the upper gas flow control surface (210). In some embodiments, the upper gas flow control surface (210) can cause gas to flow into a partial stagnation space included in the gas stagnation space (200). In some embodiments, where the gas stagnation space (200) has one or more partial stagnation spaces, the upper gas flow control surface (210) can cause gas to flow into the upper partial stagnation space (241).

[0046] In some embodiments of the present disclosure, the partial stagnation space (241, 242) may be a partial space within a gas stagnation space (200) that is partitioned by two or more gas flow control surfaces. In one embodiment, gas introduced into the partial stagnation space (241, 242) may remain within the partial stagnation space and be continuously heated by the heating means (250). In some embodiments, in order to allow the gas to remain within the partial stagnation space (241, 242) for a longer period of time, the flow paths of the two or more gas flow control surfaces partitioning the partial stagnation space may be configured differently from each other.

[0047] The upper partial stagnation space (241) according to some embodiments of the present disclosure may be a partial stagnation space formed by the upper gas flow control surface (210) and the central gas flow control surface (220). In some embodiments, the upper partial stagnation space (241) may be located closer to the gas inlet than the lower partial stagnation space (242). In one embodiment, gas introduced into the gas stagnation space (200) may be introduced into the upper partial stagnation space (241) through the upper gas flow control surface (210). In one embodiment, in order to allow the gas to remain in the upper partial stagnation space (241) for a longer period of time, the number of channels included and / or connected to the upper gas flow control surface (210), the cross-sectional area of ​​the channels, and / or the total cross-sectional area of ​​all channels included may be greater than the number of channels included in the central gas flow control surface (220), the cross-sectional area of ​​the channels, and / or the total cross-sectional area of ​​all channels included. Through this, the gas introduced through the upper gas flow control surface (210) can remain in the upper partial stagnation space (241) for a longer time, and thus can be heated to a higher temperature.

[0048] In some embodiments of the present disclosure, gas introduced into the upper stagnation space (241) may be introduced into the lower stagnation space (242) through the central gas flow control surface (220). In some embodiments, the central gas flow control surface (220) may be one or more gas flow control surfaces positioned between the upper gas flow control surface (210) and the lower gas flow control surface (230). In some embodiments, the central gas flow control surface (220) may be a gas flow control surface that divides the gas stagnation space (200) into the upper stagnation space (241) and the lower stagnation space (242). In one embodiment, the central gas flow control surface (220) may be smaller than the upper gas flow control surface (210) and larger than the lower gas flow control surface (230) in terms of the number of flow paths, the cross-sectional area of ​​the flow paths, and / or the total cross-sectional area of ​​the flow paths included in the gas flow control surface. In some embodiments, the gas flow path formed in the central gas flow control surface (220) may be configured to be inclined with respect to the cross-section of the central gas flow control surface (220). In another embodiment, the gas flow path formed in the central gas flow control surface (220) may be configured to be perpendicular with respect to the cross-section of the central gas flow control surface (220).

[0049] In some embodiments of the present disclosure, the lower partial stagnation space (242) may be a partial stagnation space that is far from the gas inlet among a plurality of partial stagnation spaces existing within the gas stagnation space (200). In another embodiment, the lower partial stagnation space (242) may refer to a partial space within the gas stagnation space (200) that is partitioned by the central gas flow control surface (220) and the lower gas flow control surface (230). That is, the gas may be introduced into the lower partial stagnation space (242) through the central gas flow control surface (220) and then provided to the substrate through one or more flow paths included and / or connected to the lower gas flow control surface (230). In some embodiments, while the gas remains in the lower partial stagnation space (242), the gas may be heated by the heating means (250).

[0050] The lower gas flow control surface (230) according to some embodiments of the present disclosure may be the gas flow control surface closest to the lower surface of the substrate processing apparatus among three or more gas flow control surfaces included in the gas stagnation space (200). In some embodiments, the lower gas flow control surface (230) may include a gas flow path. In one embodiment, the gas flow path included and / or connected to the lower gas flow control surface (230) may be formed in a vertical direction with respect to the cross-section of the lower gas flow control surface (230). In another embodiment, at least a portion of the gas flow path included and / or connected to the lower gas flow control surface (230) may be inclined with respect to the cross-section of the lower gas flow control surface (230). In a preferred embodiment, a portion of the lower gas flow path may extend below the lower gas flow control surface (230) after penetrating the lower gas flow control surface (230). More preferably, the lower gas flow path extending below the lower gas flow control surface (230) may be inclined with respect to the cross-section of the lower gas flow control surface (230). Through this, the flow of gas provided from the gas stagnation space (200) to the substrate through the gas exhaust port can be formed more smoothly.

[0051] Referring back to FIG. 2, the gas stagnation space (200) according to some embodiments of the present disclosure may include a heating means (250). In FIG. 2, for convenience of illustration, the heating means (250) is illustrated as being positioned on a side wall of the gas stagnation space (200); however, the configuration of the heating means (250) is not limited thereto. In one embodiment, the heating means (250) may be attached to the side wall of the gas stagnation space (200) or positioned at a predetermined distance from the side wall of the gas stagnation space (200). In another embodiment, the heating means (250) may be included in at least one of the side wall of the gas stagnation space (200) and / or the gas flow control surface. For example, the heating means (250) may be configured to be inserted into at least one of the side wall of the gas stagnation space (200) and / or the gas flow control surface.

[0052] According to this embodiment, when gas is discharged from a gas stagnation space (200) located at the center of the chamber to the substrate, the straightness of the gas flow directed perpendicular to the surface of the substrate is relaxed, and an air current is formed so that the gas can naturally flow from the center to the edge along the surface of the substrate, thereby reducing the temperature gradient between the center region and the edge region of the substrate, thereby improving the uniformity of substrate processing.

[0053] In addition, the area where the gas is heated increases through the side wall of the gas stagnation space (200) and the gas flow control surface forming the gas stagnation space (200), so that the gas within the gas stagnation space (200) can be heated more effectively.

[0054]

[0055] Figure 3 is a conceptual diagram showing a gas flow control surface according to one embodiment of the present invention.

[0056] Referring to FIG. 3, a gas flow control surface according to some embodiments of the present disclosure may include an upper gas flow control surface (210), a middle gas flow control surface (220), and / or a lower gas flow control surface (230).

[0057] As described above in FIG. 2, the upper gas flow control surface (210) may refer to a gas flow control surface closest to the gas inlet among a plurality of gas flow control surfaces configured within a gas stagnation space. In one embodiment, as illustrated in FIG. 3, the upper gas flow control surface (210) may include one or more upper gas channels (211). In one embodiment, the upper gas channels (211) may be formed over the entire upper gas flow control surface (210). Preferably, the upper gas channels (211) may be formed to be uniformly distributed on the upper gas flow control surface (210). In one embodiment, the cross-sectional area of ​​the upper gas channels (211) may be larger than the cross-sectional areas of the central gas channels (221) and / or the lower gas channels (231). As a specific embodiment, the radius (r1) of the upper gas channels (211) may be larger than the radius (r2) of the central gas channels and / or the radius (r3) of the lower gas channels. In another embodiment, the number of upper gas channels (211) formed in the upper gas flow control surface (210) may be greater than the number of central gas channels (221) and / or lower gas channels (231) included in the central gas flow control surface (220). Preferably, the total cross-sectional area of ​​the upper gas channels (211) included in the upper gas flow control surface (210) may be greater than the total cross-sectional area of ​​the central gas channels (221) and / or the total cross-sectional area of ​​the lower gas flow control surface (231). As another example, the total cross-sectional area of ​​the upper gas channels (211) included in the upper gas flow control surface (210) may be greater than the sum of the total cross-sectional area of ​​the central gas channels (221) and the total cross-sectional area of ​​the lower gas channels (231).

[0058] Referring back to FIG. 3, the central gas flow control surface (220) may include one or more central gas flow paths (221). In some embodiments, the central gas flow control surface (220) may refer to one or more gas flow paths positioned between the upper gas flow control surface (210) and the lower gas flow control surface (230). In another embodiment, when four or more gas flow control surfaces exist within the gas stagnation space, the central gas flow control surface (220) may refer to a gas flow path excluding the uppermost and lowermost of any three or more combinations of gas flow control surfaces. In some embodiments of the present disclosure, the central gas path (221) may be positioned at an edge of the central gas flow control surface (220). Preferably, as illustrated in FIG. 3, positioning the gas path at an edge of the gas flow control surface may mean that the distance from the center of the gas flow control surface to the center of the gas path is longer than the distance from the center of the gas path to the perimeter of the gas flow control surface. Referring to the drawings of the central gas flow control surface (220) of FIG. 3, specifically, a straight-line distance (d2) from the center of the central gas flow control surface (220) to the center of the central gas flow path (221) may be longer than the shortest straight-line distance (d2') to the periphery of the gas flow control surface of the central gas flow path (221). In some other embodiments, a cross-sectional area of ​​the central gas flow path (221) may be different from the cross-sectional areas of the upper gas flow path (211) and / or the lower gas flow path (231). Preferably, the cross-sectional area of ​​the central gas flow path (221) may be configured to be smaller than the cross-sectional area of ​​the upper gas flow path (211) and larger than the cross-sectional area of ​​the lower gas flow path (231). Preferably, the cross-sectional area of ​​the gas flow path may be larger as the gas flow path configured on the gas flow control surface is closer to the upper gas control surface (210).

[0059] Referring again to FIG. 3, a substrate processing apparatus according to some embodiments of the present disclosure may include a lower gas flow control surface (230). In some embodiments, the lower gas flow control surface (230) may include one or more lower gas channels (231). In some embodiments, the lower gas channels (231) may be located at an edge of the lower gas flow control surface (230). Similar to the central gas channel (221), the location of the lower gas channel (231) at an edge of the lower gas flow control surface (230) may mean that a straight-line distance (d3) from the center of the lower gas flow control surface to the center of the lower gas channel is greater than a shortest distance (d3') from the center of the lower gas channel to the periphery of the lower gas control surface. In some embodiments, the straight-line distance (d3) from the center of the lower gas flow control surface to the center of the lower gas channel may be less than a straight-line distance (d2) from the center of the central gas flow control surface to the center of the central gas channel. By configuring the lower gas path (231) in this way, the distance that the gas passing through the central gas flow control surface (220) travels within the lower partial stagnation space can become longer, so that the gas flow can stagnate, and accordingly, the gas can be further heated within the partial stagnation space. In another embodiment, the number of lower gas paths (231) can be less than the number of central gas paths (221). In a preferred embodiment, the cross-sectional area, the number of paths, and / or the total cross-sectional area of ​​the paths of the lower gas path (231) can be configured to be less than the cross-sectional area, the number of paths, and / or the total cross-sectional area of ​​the paths of the central gas path (221).

[0060]

[0061] Figure 4 is a conceptual diagram showing a chamber of a substrate processing device according to one embodiment of the present invention.

[0062] A substrate processing device according to one embodiment of the present invention is a device that performs heat treatment while supplying gas to a substrate, and may include, but is not limited to, a reflow device, for example.

[0063] Referring to FIG. 4, a substrate processing apparatus according to some embodiments of the present disclosure may include a chamber. The chamber may include a gas inlet positioned at the center of the upper surface of the chamber and a gas outlet positioned at the edge of the upper surface of the chamber. The chamber according to some embodiments of the present disclosure may include a plurality of gas outlets.

[0064] The chamber illustrated in FIG. 4 is illustrated as having one gas inlet in the center and two gas outlets at the edges, but the number of gas inlets and gas outlets is not limited thereto.

[0065] According to this embodiment, the substrate processing device can have gas introduced into the chamber through a gas inlet located in the center of the chamber, provided on the substrate for processing, and then discharged from the chamber through a plurality of gas outlets located at the edges.

[0066]

[0067] Figure 5 is a conceptual diagram showing a substrate processing device according to one embodiment of the present invention.

[0068] Referring to FIG. 5, a substrate processing apparatus according to some embodiments of the present disclosure may include a gas inlet (130) at the center of a chamber and a gas supply unit (110) connected to a gas source. In one embodiment, the gas supply unit (110) may include a mass flow controller (MFC). In some embodiments, the gas supply unit and / or the mass flow controller may be a device that controls the flow rate of gas supplied when various processing steps are performed in a semiconductor facility. In one embodiment, the gas supply unit (110) may allow gas for substrate processing to be introduced into the chamber by delivering gas from a gas source to the gas inlet (130), and may allow the introduced gas to flow along an air current and be discharged through a gas exhaust unit (140). In one embodiment, the gas supply unit (110) according to the present disclosure may be provided only in an inlet channel connected to the inlet, and the gas exhaust unit (110) may not be provided in the gas exhaust unit (140) and the gas discharge channel connected to the gas exhaust unit.

[0069] A substrate processing device according to some embodiments of the present disclosure may include a pressure sensor and a valve (120). Preferably, the pressure sensor may be installed in a gas exhaust port (140) and / or a gas exhaust channel connected to the gas exhaust port. Additionally, in some embodiments, the valve (120) may be implemented using an Automatic Pressure Controller (APC).

[0070] Preferably, the pressure sensor and valve (120) can measure the pressure of the gas within the chamber and control the valve so that the measured pressure reaches a preset pressure level. Through this, the substrate processing device can form a gas flow from the gas inlet (130) to the gas outlet (140) without creating a vacuum and / or reduced pressure state through a separate suction pump. Therefore, substrate processing can be smoothly performed without a separate additional suction pump within the substrate processing device, and accordingly, production costs, maintenance, management, and repair costs can be reduced.

[0071]

[0072] Figure 6 is a conceptual diagram showing a gas inlet and a gas outlet of a chamber according to one embodiment of the present invention.

[0073] Referring to FIG. 6, the gas inlet (130) and the gas outlet (140) of the chamber according to some embodiments of the present disclosure may be formed on the same chamber cross-section. Preferably, the gas inlet (130) and the gas outlet (140) of the chamber may be formed on the upper surface of the chamber. In some embodiments, as illustrated in FIG. 6, a plurality of gas outlets (140) may be formed on the chamber cross-section. In one embodiment, the distances from the center of the gas inlet (130) to the centers of the plurality of gas outlets (140) may all be formed to be the same. Furthermore, in one embodiment, the distances between the gas outlets (140) may be the same. In a specific embodiment, the angles (α, β) formed by the centers of two adjacent gas outlets and the centers of the gas inlets may be the same. In another embodiment, the plurality of gas outlets (140) may have facing gas outlets. In another embodiment, the gas outlets (140) may be located at the edge of the chamber cross-section. Preferably, the straight-line distance from the center of the gas inlet to the center of the gas outlet may be greater than the shortest distance from the center of the gas outlet to the perimeter of the cross-section of the chamber.

[0074] Referring back to FIG. 6, the gas inlet (130) and gas outlet (140) according to some embodiments of the present disclosure may be configured such that the gas flow rate at the gas outlet (140) is slower than the gas flow rate at the gas inlet (130). Preferably, the cross-sectional area of ​​the gas inlet (130) may be smaller than the cross-sectional area of ​​the gas outlet (140). Additionally, although not shown in FIG. 6, when more than one gas inlet (130) is present in the chamber, the total cross-sectional area of ​​the gas inlets (130) may be smaller than the total cross-sectional area of ​​the gas outlet (140). This allows the flow rate at the gas outlet (140) to be slower than the flow rate at the gas inlet (130), thereby improving heat exchange performance at the gas outlet (140), thereby preventing particle formation at the gas outlet (140).

[0075]

[0076] While the present invention has been described above through examples, the examples are merely intended to illustrate the spirit of the present invention and are not intended to be limiting. Those skilled in the art will appreciate that various modifications may be made to the above-described examples.

Claims

1. A substrate processing device comprising one or more chambers; The above chamber, including a gas stagnation space; The above gas stagnation space is, an upper gas flow control surface comprising one or more upper gas passages; and A lower gas flow control surface comprising one or more lower gas paths; At least a portion of the above lower gas path, Characterized in that it has a slope with respect to the cross section of the lower gas flow control surface, Substrate processing device.

2. In paragraph 1, The above gas stagnation space is, A central gas flow control surface comprising one or more central gas paths; and characterized by including a plurality of partial stagnation spaces defined by the upper gas flow control surface, the middle gas flow control surface and the lower gas flow control surface; Substrate processing device.

3. In paragraph 2, The above gas stagnation space is, characterized in that the gas inflow into the above gas stagnation space or the above partial stagnation space is configured to be greater than the gas discharge amount. Substrate processing device.

4. In paragraph 3, The above gas stagnation space is, The total cross-sectional area of ​​the upper gas duct or the number of upper gas ducts, Characterized by a total cross-sectional area of ​​the central gas euro or a number of central gas euros greater than that of the central gas euro, The total cross-sectional area of ​​the above central gas flow path or the number of the above central gas flow paths is, characterized by a lower gas path total cross-sectional area or a number of lower gas paths greater than that of the lower gas paths; Substrate processing device.

5. In paragraph 2, The upper gas path above is, characterized in that it is distributed across the upper gas flow control surface, Substrate processing device.

6. In paragraph 5, The upper gas path above is, characterized in that it is uniformly distributed on the upper gas flow control surface, Substrate processing device.

7. In paragraph 6, The above central gas duct or the above lower gas duct, characterized in that it is formed on the edge of the central gas flow control surface or the lower gas flow control surface. Substrate processing device.

8. In paragraph 7, The above central gas duct or the above lower gas duct, characterized in that the distance between the center of the gas flow control surface and the center of the gas path is greater than half the radius of the gas flow control surface. Substrate processing device.

9. In paragraph 8, The above lower gas path is, characterized in that it is formed closer to the center of the chamber cross section than the above central gas path. Substrate processing device.

10. In paragraph 1, The above substrate processing device, further comprising a heating means; The above heating means, characterized in that the gas stagnation space is heated through at least a portion of the chamber side or the gas flow control surface. Substrate processing device.

11. In clause 10, The above heating means, characterized by being adjacent to or included in at least a portion of a chamber side or gas flow control surface; Substrate processing device.

Images