Vapor deposition apparatus and upper liner thereof

Abstract

A vapor deposition apparatus (1) and an upper liner (106) thereof. The vapor deposition apparatus (1) comprises a reaction chamber (100), wherein a tray (109) is provided at a lower part of the reaction chamber (100); and an upper surface of the tray (109) is a wafer-bearing surface (1091). The apparatus (1) comprises: an upper liner (106) arranged in the reaction chamber (100) and opposite the wafer-bearing surface (1091), wherein a reaction area is formed between the upper liner (106) and the wafer-bearing surface (1091); and a gas intake device (107) configured to transversely inject a process gas into the reaction area. The upper liner (106) is formed by winding second busbars [2][3] around a central shaft of the gas intake device (107), the second busbars [2][3] are formed by winding a first busbar [1] around a start point of the first busbar [1] at a set angle in a vertical direction, and the first busbar [1] has a start point O close to the central shaft and an end point far away from the central shaft; and points x and y are any two points on the first busbar [1], and vertical distances between the points x and y and the wafer-bearing surface (1091) are marked as h1 and h2, horizontal distances between the points x and y and the central shaft are marked as l1, l2, and the point x and y satisfy h1 × l1= h2 × l2, or the upper liner (106) is formed by winding a third busbar [4] around the central shaft of the gas intake device (107), the third busbar [4] is a straight line, and the third busbar [4] and the first busbar [1] share the start point O and the end point.

Description

A vapor deposition device and upper liner thereof Technical Field

[0001] The present invention relates to the field of semiconductor equipment, in particular to a vapor deposition device and an upper liner thereof. Background Art

[0002] Chemical vapor deposition (CVD) is a process in which reactants in a gaseous state react on the wafer surface to form a thin film of the desired material. The CVD process can deposit a wide range of materials, including a wide range of insulating materials, most semiconductor materials, and metals.

[0003] CVD equipment typically consists of a reaction chamber, consisting of a chamber body and a chamber cover. A tray is placed within the chamber, on which one or more wafers are placed. A heater is located beneath the tray, which evenly transfers heat radiated from the heater to the wafers. A corrosion-resistant upper liner is also located beneath the chamber cover, with the reaction zone formed between its lower surface and the upper surface of the tray.

[0004] The inlet device (opposite the center area of ​​the tray) is fixed to the chamber's top cover through the upper liner. Process gases are introduced from the inlet device into the reaction area to process the wafers placed on the tray. During the process, the tray rotates the wafers at high speed, allowing the different types of process gases reaching the tray's top surface to mix thoroughly. At a specific temperature, the process gases react and deposit on the surface of wafer W, forming a thin film of the desired material. Wafer temperature is a key factor influencing the rate of material deposition on wafer W.

[0005] To ensure that the process gas from the inlet device flows evenly across the wafer surface in a laminar flow, the upper liner is typically parallel to the tray. However, as the process gas flows radially outward from the tray, its density gradually decreases, affecting the film growth rate. To maintain this growth rate, a large amount of process gas must be supplied to the reaction chamber, resulting in low process gas utilization. This waste of process gas is particularly prominent when producing larger-diameter wafers.

[0006] How to improve the utilization rate of process gases and the growth rate of thin films, and ensure the consistency of thin films on the wafer surface, is an urgent problem that needs to be solved. Technical issues

[0007] The object of the present invention is to provide a vapor deposition device and an upper liner thereof, wherein the upper liner of the vapor deposition device is formed by rotating the second busbar or the third busbar around the central axis of the air inlet device. The vertical distance between each point on the second busbar and the third busbar and the wafer bearing surface, and the horizontal distance between each point and the central axis of the air inlet device meet the set conditions. By changing the morphology of the upper liner, the utilization rate of the process gas in the reaction chamber (also known as improving the source efficiency) and the deposition rate of the thin film on the wafer surface are greatly improved, while also taking into account the consistency of the thickness of the thin film on the wafer surface. The vapor deposition device of the present invention can quickly grow a high-quality thin film on the wafer surface while consuming less process gas. Technical Solutions

[0008] In order to achieve the above-mentioned object, the present invention provides a vapor deposition apparatus, comprising a reaction chamber, wherein a tray is provided below the reaction chamber, and the upper surface of the tray is a wafer carrying surface, wherein the vapor deposition apparatus comprises:

[0009] an upper liner disposed in the reaction chamber and opposite to the wafer carrying surface, wherein a reaction area is formed between the upper liner and the wafer carrying surface;

[0010] an air inlet device for injecting process gas laterally into the reaction zone;

[0011] The upper pad is formed by rotating the second busbar around the central axis of the air inlet device, and the second busbar is formed by rotating the first busbar around its starting point in the vertical direction at a set angle. The first busbar has the starting point close to the central axis and the end point away from the central axis. Points x and y are any two points on the first busbar, and the vertical distances between points x and y and the wafer carrying surface are recorded as h1 and h2 respectively. The horizontal distances between points x and y and the central axis are recorded as l1 and l2 respectively. Points x and y satisfy h1×l1=h2×l2.

[0012] Alternatively, the upper gasket is formed by rotating a third busbar around the central axis of the air intake device, the third busbar is a straight line, and the third busbar shares the starting point and the end point with the first busbar.

[0013] Optionally, the angle is [-2°, 5°], which defines that the angle is a negative value when the first busbar rotates around the starting point toward the direction close to the wafer carrying surface, and the angle is a positive value when the first busbar rotates around the starting point toward the direction away from the wafer carrying surface.

[0014] Optionally, the reaction chamber includes a chamber top cover, which is located above the upper liner; a cooling fluid channel is provided in the chamber top cover.

[0015] Optionally, a heating device is provided under the tray; along the radial direction of the tray, the tray is virtually divided into a plurality of annular temperature zones, and the temperature difference between adjacent annular temperature zones exceeds a set temperature difference threshold; along the radial direction of the chamber top cover, the chamber top cover is virtually divided into a plurality of annular temperature adjustment zones corresponding to the plurality of annular temperature zones; the distance between the cooling fluid channel in the annular temperature adjustment zone and the lower surface of the chamber top cover depends on the temperature of the corresponding annular temperature zone.

[0016] Optionally, a temperature regulating mechanism is provided between the chamber top cover and the upper liner.

[0017] Optionally, the temperature adjustment mechanism includes a heat conducting plate; the upper surface of the heat conducting plate is in contact with the lower surface of the chamber top cover.

[0018] Optionally, the temperature adjustment mechanism further includes a gap formed between the heat conducting plate and the upper pad.

[0019] Optionally, the gap first becomes smaller and then becomes larger in a direction away from the air intake device.

[0020] Optionally, the thickness of the heat conducting plate first becomes thicker and then becomes thinner in a direction away from the air intake device.

[0021] Optionally, the surface emission of the heat conducting plate first increases and then decreases in a direction away from the air inlet device.

[0022] Optionally, the vapor deposition equipment further includes a heat transfer gas input end and a heat transfer gas output end, for providing flowing heat transfer gas to the gap.

[0023] Optionally, the composition of the heat transfer gas is adjustable.

[0024] Optionally, the vapor deposition equipment further includes an exhaust ring, which is arranged around the lower side of the tray.

[0025] Optionally, the air pumping ring includes an inner ring, an outer ring, and a ring top surface connecting the inner ring and the outer ring; and a plurality of air pumping holes are opened on the ring top surface along the circumferential direction of the air pumping ring.

[0026] Optionally, the vapor deposition apparatus further comprises a side wall liner, which is arranged around the periphery of the tray and is located between the upper liner and the vacuum ring.

[0027] Optionally, the upper end of the side wall liner has an airflow guide portion extending toward the air intake device.

[0028] Optionally, the upper pad further includes an upper pad bearing portion extending from the end point in a direction away from the central axis, and a bottom surface of the upper pad bearing portion is in contact with a top surface of the airflow guiding portion.

[0029] Optionally, the air inlet device includes air outlet ends located at different heights, and the air outlet end closest to the upper liner is used for supplying inactive gas.

[0030] The present invention also provides an upper liner, which is used for a vapor deposition device. The vapor deposition device includes a reaction chamber, a tray is provided below the reaction chamber, and the upper surface of the tray is a wafer carrying surface;

[0031] The upper liner is arranged in the reaction chamber and is opposite to the wafer carrying surface, and a reaction area is formed between the upper liner and the wafer carrying surface;

[0032] The vapor deposition apparatus further comprises a gas inlet device, the gas inlet device being used to inject process gas laterally into the reaction area;

[0033] The upper pad is formed by rotating the second busbar around the central axis of the air inlet device, and the second busbar is formed by rotating the first busbar around its starting point in the vertical direction at a set angle. The first busbar has the starting point close to the central axis and the end point away from the central axis. Points x and y are any two points on the first busbar, and the vertical distances between points x and y and the wafer carrying surface are recorded as h1 and h2 respectively. The horizontal distances between points x and y and the central axis are recorded as l1 and l2 respectively. Points x and y satisfy h1×l1=h2×l2.

[0034] Alternatively, the upper gasket is formed by rotating a third busbar around the central axis of the air intake device, the third busbar is a straight line, and the third busbar shares the starting point and the end point with the first busbar.

[0035] Optionally, the angle is [-2°, 5°], which defines that the angle is a negative value when the first busbar rotates around the starting point toward the direction close to the wafer carrying surface, and the angle is a positive value when the first busbar rotates around the starting point toward the direction away from the wafer carrying surface. Beneficial effects

[0036] Compared with the prior art, the present invention has the following beneficial effects:

[0037] 1) The upper liner of the vapor deposition equipment of the present invention is formed by rotating the second busbar / third busbar around the central axis of the air inlet device. The vertical distance between each point on the second busbar / third busbar and the wafer bearing surface, and the horizontal distance between each point and the central axis of the air inlet device meet the set conditions. By changing the morphology of the upper liner, the utilization rate of the process gas in the reaction chamber and the deposition rate of the thin film on the wafer surface are greatly improved, while also taking into account the consistency of the thickness of the thin film on the wafer surface. The vapor deposition equipment of the present invention can quickly grow a high-quality thin film on the wafer surface while consuming less process gas.

[0038] 2) The chamber top cover of this invention features cooling fluid channels that effectively remove heat radiated from the tray and wafers to the upper liner, reducing the deposition of reactive gases on the upper liner surface. This effectively reduces particulate contamination within the reaction chamber, significantly improving wafer yield. This also reduces the frequency of chamber cleaning, significantly improving wafer processing efficiency, and significantly reducing wafer processing costs.

[0039] 3) In the present invention, the tray is virtually divided into multiple annular temperature zones based on the temperature difference across the tray surface, and the chamber top cover is virtually divided into annular temperature adjustment zones corresponding to these zones. If the temperature of an annular temperature zone is higher / lower, the distance between the cooling fluid channel within the corresponding annular temperature adjustment zone and the lower surface of the chamber top cover is closer / farther. This allows the temperature of the upper liner to be adjusted by zone, which helps reduce the temperature gradient of the upper liner and prevents deformation of the upper liner. By improving the consistency of the upper liner temperature, the consistency of the process gas temperature within the reaction chamber can also be improved (heat transfer occurs between the upper liner and the process gas within the reaction chamber), which is beneficial for growing a thin film of uniform thickness on the wafer surface.

[0040] 4) The present invention incorporates a temperature control mechanism between the chamber cover and the upper liner. This mechanism includes a heat-conducting plate positioned between the chamber cover and the upper liner, and a gap formed between the heat-conducting plate and the upper liner. The heat-conducting plate and the heat-transferring gas in the gap enhance heat transfer between the upper liner and the chamber cover, effectively conducting heat away from the upper liner and preventing film deposition on the upper liner surface.

[0041] 5) In the direction away from the air inlet device, the thickness, surface emissivity and gap size of the heat conducting plate of the present invention change with the temperature of the tray, thereby adjusting the temperature of the upper liner by region and ensuring the consistency of the upper liner temperature.

[0042] 6) In the present invention, the composition of the heat transfer gas can be adjusted in real time according to the process and temperature within the reaction chamber, thereby adjusting the temperature of the upper liner in real time. In the deposition process of different materials, the deposition of the upper liner can be reduced. BRIEF DESCRIPTION OF THE DRAWINGS

[0043] In order to more clearly illustrate the technical solution of the present invention, the following briefly introduces the drawings required for the description. Obviously, the drawings described below are one embodiment of the present invention. Those skilled in the art can also derive other drawings based on these drawings without inventive effort:

[0044] FIG1 is a schematic diagram of a vapor deposition apparatus;

[0045] FIG2 is an AA view of FIG1 ;

[0046] FIG3 is a schematic diagram of a vapor deposition apparatus in Example 1 of the present invention;

[0047] FIG4 is a schematic diagram of an air intake device in Embodiment 1 of the present invention;

[0048] FIG5 is a top view of the tray, side wall gasket, and air pumping ring in Example 1 of the present invention;

[0049] FIG6 is a schematic diagram of the first busbar, the second busbar, and the third busbar in Embodiment 1 and Embodiment 2 of the present invention;

[0050] FIG7 is a schematic diagram of a horizontal straight line for generating an upper liner of the vapor deposition apparatus of FIG1 ;

[0051] FIG8 is a comparison chart of the average growth rate of thin films on wafer surfaces and the differences in film consistency in multiple embodiments;

[0052] FIG9 is a schematic diagram of the deposition rate of a thin film on a wafer surface along the radial direction of the wafer in various embodiments;

[0053] FIG10 is a schematic diagram of dividing the tray into multiple annular temperature zones and the chamber top cover into multiple annular temperature adjustment zones in Example 3 of the present invention;

[0054] FIG11 is a schematic diagram of a heat conducting plate with a gradient thickness in a fourth embodiment of the present invention. Modes for Carrying Out the Invention

[0055] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0056] It will be understood that when used in this specification and the appended claims, the term "comprising" indicates the presence of described features, integers, steps, operations, elements and / or components, but does not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components and / or groups thereof.

[0057] It should also be understood that the terms used in this specification are for the purpose of describing specific embodiments only and are not intended to limit the present application. As used in this specification and the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms unless the context clearly indicates otherwise.

[0058] It should be further understood that the term "and / or" used in this specification and the appended claims refers to and includes any and all possible combinations of one or more of the associated listed items.

[0059] As used in this specification and the appended claims, the term "if" can be interpreted as "when" or "upon" or "in response to determining" or "in response to detecting," depending on the context. Similarly, the phrase "if it is determined" or "if [described condition or event] is detected" can be interpreted as meaning "upon determination" or "in response to determining" or "upon detection of [described condition or event]" or "in response to detecting [described condition or event]," depending on the context.

[0060] In addition, in the description of the present application, the terms "first", "second", "third", etc. are only used to distinguish the description and cannot be understood as indicating or implying relative importance.

[0061] FIG1 shows a vapor deposition apparatus 1 having a reaction chamber 100 in which a wafer W can be processed. The reaction chamber 100 comprises a chamber cover 101 and a chamber body 102. The chamber cover 101 covers the chamber body 102, and the chamber cover 101 and the chamber body 102 together form an airtight internal processing space. The chamber cover 101 is generally made of a metal material (e.g., stainless steel). Although the chamber body 102 shown in FIG1 is cylindrical, it may also be in other shapes, such as square, hexagonal, octagonal, or any other appropriate shape.

[0062] As shown in Figure 1, the top of the gas inlet device 107 (usually made of stainless steel that is corrosion-resistant and has good thermal conductivity) is penetrated by the chamber top cover and is located in the reaction chamber 100. The tray 109 is arranged below the gas inlet device 107 and opposite to the gas inlet device 107. The upper surface of the tray 109 is a wafer supporting surface 1091. A reaction area is formed between the wafer supporting surface 1091 and the chamber top cover 101. The gas path of the gas inlet device 107 is connected to an external process gas supply device (not shown in the figure) for delivering process gas to the reaction area. The process gas may include a carrier gas (carrier gas) and a process gas, and the process gas may include a Group III gas and a Group V gas. In a typical metal organic chemical vapor deposition process, the carrier gas may be nitrogen, hydrogen, argon or other gases.

[0063] Tray 109 is typically made of graphite, which has good thermal conductivity. A heating element 120 is located beneath the tray. This heating element 120 heats tray 109, which then transfers the heat from heating element 120 to wafer W. Process gases react at a specific temperature and deposit on wafer W, forming a thin film of the desired material.

[0064] A drive shaft 104 (which can be driven by an external motor or cylinder) is fixedly connected to the bottom of the tray 109. The bottom of the drive shaft 104 extends vertically downward through the bottom wall of the chamber body 102 and is located outside the reaction chamber 100. The drive shaft 104 drives the tray 109 to rotate at high speed, so that the different types of process gases reaching the top surface of the tray 109 are fully mixed under the high-speed rotation of the tray 109.

[0065] The exhaust device 103 is used to discharge the gas in the reaction chamber 100, including the waste gas generated by the reaction and part of the process gas that has not yet participated in the reaction.

[0066] The upper liner 106 is disposed below the chamber cover 101 and is used to isolate heat radiated from the reaction chamber 100 to the chamber cover 101 and prevent the formation of deposits on the chamber cover 101. The material of the upper liner 106 can be graphite. The chamber cover 101 and the upper liner 106 in Figure 1 both have a flat-plate structure, which can prevent large-scale vertical diffusion of airflow in the reaction chamber 100, ensure that the airflow in the reaction chamber 100 is in a horizontal state, and improve the uniformity of the airflow distribution in the reaction chamber 100.

[0067] From the inside out, along the radial direction of the tray 109, the area of ​​the process gas flow cross section 108 gradually increases. This cross section 108 is a cylindrical cross section within the reaction chamber 100, coaxial with the gas inlet device 107. Its top and bottom rest on the upper liner 106 and wafer support surface 1091, respectively. As shown in Figures 1 and 2, when the horizontal distance l between the flow cross section 108 and the central axis of the gas inlet device is flow cross section 108, its area s = 2π × l × h, where h represents the height of flow cross section 108. When the upper liner 106 is a flat plate, h represents the vertical distance between the upper liner 106 and wafer support surface 1091.

[0068] As the process gas flows from the inlet device 107 away from the inlet device 107, the area of ​​the flow cross section 108 gradually increases, thereby gradually decreasing the density of the process gas and slowing the film deposition rate. To prevent the process gas in the reaction chamber 100 from becoming increasingly diluted along its flow direction, the amount of process gas supplied must be increased. This results in the amount of process gas supplied being far greater than the actual reaction required, resulting in waste.

[0069] On the other hand, the upper liner 106 is subjected to greater heat radiation, and the process gas is easily deposited on the surface of the upper liner 106. After the deposits on the surface of the upper liner 106 are peeled off, they are likely to form particle contaminants in the reaction chamber 100, greatly reducing the yield of the wafer W.

[0070] The present invention provides a vapor deposition device, the upper pad of the vapor deposition device is formed by rotating the second busbar or the third busbar around the central axis of the air inlet device 107. The vertical distance between each point on the second busbar and the third busbar and the wafer supporting surface 1091, and the horizontal distance between each point and the central axis of the air inlet device meet the set conditions. The present invention greatly improves the utilization rate of the process gas in the reaction chamber 100 and the deposition rate of the thin film on the wafer surface by changing the morphology of the upper pad 106, while also taking into account the consistency of the thickness of the thin film on the wafer surface. The vapor deposition device of the present invention can quickly grow a high-quality thin film on the surface of the wafer. At the same time, the present invention can also adjust the temperature of the upper pad 106 according to the region, quickly conduct the heat of the upper pad 106, and also improve the consistency of the temperature of the upper pad 106, which not only greatly reduces the deposits on the surface of the upper pad 106, but also prevents the upper pad 106 from being deformed and damaged due to thermal stress. Example 1

[0071] The present invention provides a vapor deposition apparatus 2, as shown in FIG3 , comprising a reaction chamber 200. The reaction chamber 200 comprises a chamber cover 201 and a chamber body 202. The reaction chamber 200 is provided with a tray 209, an air inlet device 207, an upper liner 206, an exhaust ring 230, and a sidewall liner 270. The chamber cover 201 is located above the upper liner 206.

[0072] The tray 209 is positioned at the bottom of the reaction chamber 200. The upper surface of the tray 209 serves as a wafer support surface 2091. The upper liner 206 faces the wafer support surface 2091, forming a reaction area C between the upper liner 206 and the wafer support surface 2091. A heating device 220 is positioned below the tray 209. Heat energy from the heating device 220 is transferred to the wafer W via the tray 209. The process gases react at a specific temperature and are deposited on the wafer W to form a thin film of the desired material.

[0073] In this embodiment, as shown in FIG3 , a plurality of recesses are provided on the upper surface of the tray 209 along the circumferential direction of the tray 209 , and a plurality of wafer carriers 205 for placing wafers W are respectively provided in the plurality of recesses. A special air channel (not shown in the figure) is provided in the recess, and the air channel is used to pass a gas of a certain pressure between the wafer carrier 205 and the tray 209 , so that the wafer carrier 205 can be lifted off the surface of the tray by the air pressure, suspended at a certain height, and then rotated around its center. A drive shaft 204 is fixedly connected to the bottom of the tray 209, which is used to drive the tray 209 to drive the wafer carrier 205 to rotate at high speed around the center of the tray. By driving the wafer carrier 205 to rotate and revolve, different types of process gases reaching the upper surface of the wafer are deposited on the wafer W in a uniform distribution.

[0074] As shown in FIG4 , the interior of the air inlet device 207 includes multiple air inlet pipes 2071. The air inlet end 20711 of the air inlet pipe 2071 is connected to an external process gas supply device (not shown). The air outlet end 20712 of the air inlet pipe 2071 has a horizontal, straight-line structure (its length is parallel to the radial direction of the tray 209), which is used to inject process gas laterally into the reaction area C. This allows the process gas to pass through the wafer surface as horizontally as possible and be evenly distributed on the wafer surface, thereby improving the uniformity of the thin film deposited on the wafer surface. The air outlet ends 20712 of different types of process gases have different heights, so that multiple process gases can be injected into the reaction chamber 200 in layers in the vertical direction, preventing the multiple process gases from reacting prematurely before reaching the surface of the wafer W.

[0075] As shown in Figures 3 and 5, the exhaust ring 230 is disposed around the lower side of the tray 209. The exhaust ring 230 comprises an inner ring 231, an outer ring 232, and a top surface 233 connecting the inner and outer rings. As shown in Figure 5, a plurality of exhaust holes 235 are formed on the top surface 233 along the circumference of the exhaust ring 230. Gas within the reaction chamber 200 is discharged to the exterior of the reaction chamber 200 through the exhaust ring 230 and the exhaust device in sequence.

[0076] As shown in Figures 3 and 5 , the sidewall liner 270 is disposed around the outer circumference of the tray 209 and located between the upper liner 206 and the pumping ring 230 . The sidewall liner 270 prevents process gases from depositing on the inner sidewalls of the reaction chamber 200 . In this embodiment, as shown in Figure 3 , the sidewall liner 270 includes an airflow guide 271 extending toward the air inlet device 207 . The airflow guide 271 has an annular structure with an inner diameter that gradually increases from top to bottom. The process gases are directed to the pumping ring 230 through the airflow guide 271 .

[0077] In this embodiment, upper pad 206 is formed by rotating a first busbar ① around the central axis of air inlet device 207. As shown in Figure 6, first busbar ① has a starting point close to the central axis and an end point O' further away from the central axis. The starting point is the end point of upper pad 206 closest to air inlet device 207. Points x and y are any two points on first busbar ①. The vertical distances between points x and y and wafer support surface 2091 are denoted as h1 and h2, respectively. The horizontal distances between points x and y and the central axis of the air inlet device are denoted as l1 and l2, respectively. Points x and y satisfy the equation h1 × l1 = h2 × l2.

[0078] In this embodiment, as shown in Figure 3, the end point O' falls on the top surface of the airflow guide portion 271. A horizontal segment extends outward from the end point O' in a direction parallel to the radial direction of the tray. This horizontal segment rotates around the central axis of the air inlet device 207 to form an annular upper gasket support portion 2061. The bottom surface of the upper gasket support portion 2061 abuts the top surface of the airflow guide portion 271, and the airflow guide portion 271 provides support for the upper gasket support portion 2061. It is worth noting that the bottom surface of the upper gasket support portion 2061 and the top surface of the sidewall gasket 270 do not need to be horizontal, as long as they can ensure a close fit.

[0079] As shown in Figure 3, the process gas flow cross-section 208 is a cylindrical cross-section within the reaction chamber 200, coaxial with the gas inlet device 207. The top and bottom of the flow cross-section 208 fall on the upper liner 206 and the wafer support surface 2091, respectively. As can be easily understood, the flow cross-section 208 corresponding to point x and the flow cross-section 208 corresponding to point y have the same area S, where S = 2π × h1 × l1. This means that the upper liner 206, generated by the first busbar ① in the present invention, ensures that the cross-sectional area of ​​the process gas flow is uniform throughout the radial direction of the tray 209. Therefore, in this embodiment, the concentration gradient of the process gas is relatively small away from the gas inlet device 207 (the decrease in process gas concentration is primarily due to the continuous reaction and deposition of the process gas during its flow). This present invention significantly improves process gas utilization, reduces process gas usage, and significantly reduces the cost of wafer W processing.

[0080] In another embodiment, inert gas may be flowed into the reaction region C from the gas outlet 20712 closest to the upper liner 206, thereby forming a separation layer between the process gas involved in the reaction and the upper liner 206. This not only helps reduce deposits on the surface of the upper liner 206, but also forces the process gas involved in the reaction closer to the wafer surface, thereby improving the utilization rate of the process gas.

[0081] The rate of chemical reactions on the wafer surface is affected by the concentration of process gases on the wafer surface. In this embodiment, the distance between the upper liner 206 and the wafer support surface 2091 gradually decreases as the distance away from the gas inlet device 207 increases. The process gas flowing out of the gas inlet device 207 is forced by the upper liner 206 to flow toward the wafer support surface 2091. The process gas originally transported horizontally acquires a vertical velocity component, allowing more process gas to be transported to the wafer surface to participate in the chemical reactions on the wafer surface. Therefore, the present invention improves the deposition rate of thin films on the wafer surface.

[0082] In one experiment, a thin film of the same material was deposited on a wafer W of the same size (wafer W rotates while also revolving with the tray 209) using a vapor deposition apparatus 1 with a flat upper pad 106 and a vapor deposition apparatus 2 of this embodiment (the upper pad 206 is generated by the first busbar ①). In this experiment, the reaction chambers 200 of the vapor deposition apparatus 1 and the vapor deposition apparatus 2 have the same diameter, and both use trays of the same size. In this experiment, the wafer diameter is approximately 150 mm. In the vapor deposition apparatus 1, the vertical distance between the upper pad 106 and the wafer support surface 2091 is the same as the vertical distance between the starting point O of the upper pad 206 and the wafer support surface 2091 in the vapor deposition apparatus 2. It should be emphasized that the above data is for example only and is not intended to limit the present invention.

[0083] As shown in FIG7 , the flat upper liner 106 of the vapor deposition apparatus 1 can be considered as being formed by rotating a horizontal straight line (base) around the central axis of the air inlet device 107. When the upper liner 106 is rotated from the horizontal straight line, as shown in FIG8 , the average growth rate of the film on the wafer surface is 2.5896 μm / h, and the film thickness uniformity difference is 3.16%. The film thickness uniformity difference is calculated as (GR max —GR min ) / GR ave / 2,GR max GR min are the maximum and minimum growth rates of the thin film on the wafer surface, GR ave is the average growth rate of the film on the wafer surface. Ideally, we hope that the average growth rate of the film is as high as possible and the film thickness uniformity is as small as possible.

[0084] In the above experiment, when the upper pad 206 obtained from the first busbar ① was used for the CVD process, as shown in Figure 8, the average growth rate of the film on the wafer surface was 3.0192um / h, and the film thickness consistency difference was 3.18%. As shown in Figure 9, at various positions in the radial direction of the wafer, the film growth rate corresponding to the first busbar ① was always higher than the film growth rate corresponding to the horizontal line base. The above data show that the vapor deposition equipment 2 of this embodiment significantly improves the film growth rate while also taking into account the consistency of the film thickness on the wafer surface. The vapor deposition equipment 2 is capable of quickly growing high-quality films on the wafer surface.

[0085] In the present invention, the upper pad 206 can also be formed by rotating the second busbar around the central axis of the air inlet device 207. The second busbar is formed by rotating the first busbar ① around its starting point O in the vertical direction by a set angle. Definition: When the first busbar ① rotates around its starting point O in a direction close to the wafer support surface 2091, the angle is a negative value; when the first busbar ① rotates around its starting point O in a direction away from the wafer support surface 2091, the angle is a positive value. In the present invention, the angle is [-2°, 5°], including -2°, (-2°, 0°), 0°, (0°, 5°), 5°, (-2°, 5°), etc.

[0086] In another embodiment, as shown in FIG6 , a second busbar ② is formed by rotating the first busbar ①. In this embodiment, the area of ​​the flow cross section 208 gradually decreases (to less than S) as it moves away from the gas inlet device 207. Compared to the upper liner 206 generated by the first busbar ①, the upper liner 206 of this embodiment can deliver more process gas to the wafer surface, further reducing the amount of process gas delivered and increasing the average growth rate of the thin film on the wafer surface.

[0087] As shown in Figure 9, at all locations along the wafer's radial direction, the film growth rate corresponding to the second busbar ② is consistently higher than that corresponding to the first busbar ①. As shown in Figure 8, the average film growth rate across the wafer surface corresponding to the second busbar ② is 3.1660 μm / h, with a film thickness consistency of 4.13%. It can also be seen that the film thickness consistency for the second busbar ② is slightly higher than the 3.67% for the first busbar ①, but remains within an acceptable range.

[0088] In another embodiment, as shown in FIG6 , the second busbar ③ is obtained by rotating the first busbar ①. As shown in FIG9 , at each position in the radial direction of the wafer, the film growth rate corresponding to the second busbar ③ is always lower than the film growth rate corresponding to the first busbar ①. In this embodiment, although the area of ​​the flow cross section 208 still gradually increases in the direction away from the air inlet device 207, compared with the use of a flat-type upper liner 106, the amount of process gas supplied can still be reduced and the source efficiency of the process gas can be improved. In this embodiment, as shown in FIG8 , the average growth rate of the film on the wafer surface is 2.6786um / h, and the film thickness consistency difference is 2.37%. Compared with the use of a flat-type upper liner, this embodiment not only improves the average growth rate of the film on the wafer surface, but also reduces the film thickness consistency difference, and is a preferred embodiment. Example 2

[0089] The upper liner 206 of this embodiment is formed by rotating the third busbar ④ around the central axis of the air intake device 207. As shown in Figure 6, the third busbar ④ is a straight line. The third busbar ④ and the first busbar ① share the starting point O and the end point O'. The third busbar ④ is located between the first busbar ① and the second busbar ③.

[0090] As shown in Figure 9, at various locations along the wafer's radial direction, the film growth rate corresponding to busbar 4 is lower than that corresponding to busbar 1, and higher than that corresponding to busbar 3. As shown in Figure 8, the average film growth rate corresponding to busbar 4 is 2.9127 μm / h, and the film thickness uniformity is 3.67%.

[0091] Compared with the flat upper liner 106, the upper liner 206 generated by the third busbar ④ increases the process gas source efficiency and improves the film deposition rate on the wafer surface, while having a small impact on the consistency of the film thickness on the wafer surface, which can be ignored. Example 3

[0092] In this embodiment, as shown in Figures 3 and 10 , a cooling fluid channel 2011 is provided within the chamber top cover 201. Due to the excellent heat transfer between the chamber top cover 201 and the upper liner 206, the temperature of the chamber top cover 201 and the upper liner 206 can be regulated through the cooling fluid channel 2011. Ideally, the temperature of the upper liner 206 is approximately 100 to 200 degrees Celsius lower than the tray temperature. This reduces film deposition on the surface of the upper liner 206, thereby effectively reducing particulate contamination within the reaction chamber 200, thereby improving wafer W yield and reducing the frequency of cleaning the reaction chamber 200. Furthermore, heat transfer also occurs between the upper liner 206 and the process gas within the reaction chamber 200. By controlling the temperature of the upper liner 206, it is possible to prevent the process gas temperature within the reaction chamber 200 from failing to meet process requirements due to the upper liner 206 being too low.

[0093] Due to heat conduction caused by gas flow and the presence of cooling channels in the cavity, the thermal conductivity of different areas of tray 209 inevitably varies significantly. In this embodiment, based on the temperature distribution of tray 209 during the process, tray 209 is virtually divided into multiple concentric annular temperature zones along its radial direction. The temperature difference between adjacent annular temperature zones exceeds a set temperature difference threshold. As shown in Figure 10, in this embodiment, the tray is divided into three annular temperature zones D1, D2, and D3. The number of annular temperature zones is provided for example only and is not intended to limit the present invention.

[0094] Along the radial direction of the chamber top cover 201, the chamber top cover 201 is virtually divided into multiple annular temperature control zones corresponding to the multiple annular temperature zones. Each annular temperature zone radiates different amounts of heat to the corresponding annular area of ​​the upper gasket. The distance between the cooling fluid channel 2011 within the annular temperature control zone and the lower surface of the chamber top cover 201 depends on the temperature of the corresponding annular temperature zone. As shown in Figure 10, in this embodiment, the chamber top cover 201 is divided into three annular temperature control zones G1, G2, and G3.

[0095] As shown in Figure 10, annular temperature zone D2 has the highest temperature, corresponding to the closest distance between the cooling fluid channel 2011 in annular temperature adjustment zone G2 and the lower surface of the chamber top cover 201. Annular temperature zone D1 has the lowest temperature, corresponding to the greatest distance between the cooling fluid channel 2011 in annular temperature adjustment zone G1 and the lower surface of the chamber top cover 201. This allows the temperature of the upper liner 206 to be adjusted by region, helping to reduce the temperature gradient of the upper liner 206 and prevent deformation of the upper liner 206 due to thermal stress. By improving the temperature consistency of the upper liner 206, the temperature consistency of the process gas within the reaction chamber 200 can also be improved, which is beneficial for growing a thin film of uniform thickness on the wafer surface. Example 4

[0096] In this embodiment, a temperature control mechanism is provided between the chamber top cover 201 and the upper liner 206 to enhance the temperature control effect on the upper liner 206. As shown in Figures 3 and 11, the temperature control mechanism includes a heat conducting plate 261 (made of aluminum or quartz), the upper surface of which is in contact with the lower surface of the chamber top cover 201.

[0097] As shown in Figures 3 and 11, the temperature control mechanism further includes a gap 262 formed between the heat conducting plate 261 and the upper liner 206. The vapor deposition apparatus further includes a heat transfer gas input port 2621, as shown in Figures 3 and 11. The heat transfer gas input port 2621 penetrates the chamber top cover 201 and the heat conducting plate 261 and is used to provide heat transfer gas to the gap 262.

[0098] It's easy to understand that the thicker the heat conducting plate 261 and the higher its surface emissivity, the better its heat transfer performance. Based on the temperature distribution characteristics of the tray 209, in this embodiment, as shown in Figure 11, the thickness of the heat conducting plate 261 first increases and then decreases as it moves away from the air inlet device 207, and / or the surface emissivity of the heat conducting plate 261 first increases and then decreases. Because the spacing between the chamber top cover 201 and the upper liner 206 is consistent throughout, as the heat conducting plate 261 thickens / thinns, the gap 262 decreases / increases. Therefore, as it moves away from the air inlet device 207, the gap 262 first decreases and then increases.

[0099] In this embodiment, the thickness of the heat conducting plate 261, the surface emissivity of the heat conducting plate 261, and the size of the gap 262 change with the temperature of the tray 209, which helps to adjust the temperature of the upper pad 206 by region, improve the temperature consistency of the upper pad 206, and avoid deformation and damage of the upper pad 206 due to excessive temperature gradient.

[0100] In another embodiment, the composition of the heat transfer gas is adjustable. For example, the heat transfer gas may include nitrogen and argon, each of which has different thermal conductivities. By adjusting the flow ratio of nitrogen to argon, the thermal conductivity of the heat transfer gas can be adjusted, thereby adjusting the temperature of the upper liner 206 in real time. During the deposition process of different materials, the upper liner 206 can be adjusted to different temperatures to reduce deposits on the upper liner 206. In one embodiment, the flow ratio of nitrogen to argon ranges from 3:1 to 2:1 (this is for example only and not intended to be a limitation of the present invention).

[0101] It should be understood that the size of the serial numbers of the steps in the above embodiments does not mean the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of this application.

[0102] The above description is merely a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any person skilled in the art can easily conceive of various equivalent modifications or substitutions within the technical scope disclosed in the present invention, and such modifications or substitutions are intended to be within the scope of protection of the present invention. Therefore, the scope of protection of the present invention shall be subject to the scope of protection of the claims.

Claims

1. A vapor deposition device, comprising a reaction chamber, a tray is arranged below in the reaction chamber, and the upper surface of the tray is a wafer bearing surface, characterized in that, The vapor deposition equipment includes: An upper gasket, which is arranged in the reaction chamber and opposite to the wafer carrying surface, and a reaction area is formed between the upper gasket and the wafer carrying surface; An air inlet device, which is used to laterally inject process gas into the reaction area; The upper gasket is formed by rotating a second generatrix around the central axis of the air inlet device, the second generatrix is formed by rotating a first generatrix around its starting point by a set angle in the vertical direction, the first generatrix has the starting point close to the central axis and the end point far from the central axis; points x and y are any two points on the first generatrix, the vertical distances between points x and y and the wafer carrying surface are respectively denoted as h1 and h2, the horizontal distances between points x and y and the central axis are respectively denoted as l1 and l2, and points x and y satisfy h1×l1 = h2×l2. Alternatively, the upper gasket is formed by rotating a third generatrix around the central axis of the air inlet device, the third generatrix is a straight line, and the third generatrix shares the starting point and the end point with the first generatrix.

2. The vapor deposition device according to claim 1, wherein The angle is [-2°, 5°], and it is defined that the angle is negative when the first generatrix rotates around the starting point towards the direction close to the wafer carrying surface, and the angle is positive when the first generatrix rotates around the starting point towards the direction far from the wafer carrying surface.

3. The vapor deposition apparatus according to claim 1, wherein The reaction chamber includes a chamber top cover, which is located above the upper gasket; a cooling fluid channel is provided in the chamber top cover.

4. The vapor deposition apparatus according to claim 3, wherein A heating device is provided below the tray; along the radial direction of the tray, the tray is virtually divided into multiple annular temperature zones, and the temperature difference between adjacent annular temperature zones exceeds a set temperature difference threshold; along the radial direction of the chamber top cover, the chamber top cover is virtually divided into multiple annular temperature adjustment zones corresponding to the multiple annular temperature zones respectively; the distance between the cooling fluid channel in the annular temperature adjustment zone and the lower surface of the chamber top cover depends on the temperature of the corresponding annular temperature zone.

5. The vapor deposition apparatus according to claim 3, wherein A temperature adjustment mechanism is provided between the chamber top cover and the upper gasket.

6. The vapor deposition apparatus according to claim 5, wherein, The temperature adjustment mechanism includes a heat conduction plate; the upper surface of the heat conduction plate fits the lower surface of the chamber top cover.

7. The vapor deposition apparatus according to claim 6, wherein The temperature adjustment mechanism further includes a gap formed between the heat conduction plate and the upper gasket.

8. The vapor deposition apparatus according to claim 7, wherein Along the direction away from the air inlet device, the gap first becomes smaller and then larger.

9. The vapor deposition apparatus according to claim 8, wherein Along the direction away from the air inlet device, the thickness of the heat conduction plate first becomes thicker and then thinner.

10. The vapor deposition device according to claim 7, wherein Along the direction away from the air inlet device, the surface emissivity of the heat conduction plate first becomes larger and then smaller.

11. The vapor deposition device according to any one of claims 7-10, characterized in that, The vapor deposition equipment further includes a heat transfer gas input end and a heat transfer gas output end, which are used to provide flowing heat transfer gas to the gap.

12. The vapor deposition apparatus according to claim 11, wherein, The composition of the heat transfer gas is adjustable.

13. The vapor deposition device according to claim 1, characterized in that, The vapor deposition equipment further includes an air extraction ring, which is arranged around the lower side of the tray.

14. The vapor deposition apparatus according to claim 13, wherein The air extraction ring includes an inner ring, an outer ring and a ring top surface connecting the inner ring and the outer ring; along the circumferential direction of the air extraction ring, a plurality of air extraction holes are formed in the ring top surface.

15. The vapor deposition apparatus according to claim 13, characterized in that, The vapor deposition equipment further includes a side wall gasket, which is arranged around the outer circumference of the tray, and the side wall gasket is located between the upper gasket and the air extraction ring.

16. The vapor deposition apparatus according to claim 15, characterized in that, The upper end of the sidewall gasket has an air flow guiding portion extending towards the intake device.

17. The vapor deposition apparatus according to claim 16, wherein The upper gasket further includes an upper gasket bearing portion extending away from the central axis from the end point, and the bottom surface of the upper gasket bearing portion is in contact with the top surface of the air flow guiding portion.

18. The vapor deposition apparatus according to claim 1, wherein, The intake device includes air outlet ends at different heights, and the air outlet end closest to the upper gasket is used to supply an inert gas.

19. An upper gasket, which is used for a chemical vapor deposition device, and is characterized in that, The chemical vapor deposition equipment includes a reaction chamber, and a tray is provided below in the reaction chamber, and the upper surface of the tray is a wafer bearing surface; The upper gasket is arranged in the reaction chamber and is opposite to the wafer bearing surface, and a reaction area is formed between the upper gasket and the wafer bearing surface; The chemical vapor deposition equipment further includes an intake device, and the intake device is used to laterally inject process gas into the reaction area; The upper gasket is formed by rotating a second generatrix around the central axis of the intake device, the second generatrix is formed by rotating a first generatrix around its starting point by a set angle in the vertical direction, the first generatrix has the starting point close to the central axis and the end point far from the central axis; points x and y are any two points on the first generatrix, the vertical distances between points x and y and the wafer bearing surface are respectively denoted as h1 and h2, and the horizontal distances between points x and y and the central axis are respectively denoted as l1 and l2, and points x and y satisfy h1×l1 = h2×l2. Alternatively, the upper gasket is formed by rotating a third generatrix around the central axis of the intake device, the third generatrix is a straight line, and the third generatrix shares the starting point and the end point with the first generatrix.

20. The upper gasket according to claim 19, characterized in that, The angle is [-2°, 5°], and when the first generatrix rotates around the starting point towards the wafer bearing surface, the angle is defined as negative, and when the first generatrix rotates around the starting point away from the wafer bearing surface, the angle is defined as positive.

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