Substrate processing apparatus and substrate processing method

Abstract

This substrate processing apparatus includes: a nozzle that discharges a processing liquid; a first liquid supply system that includes a first pipe connected to the nozzle and supplies a first liquid to the nozzle through the first pipe; a second liquid supply system that includes a plurality of second sub-pipes respectively connected to a plurality of different portions of a liquid flow passage formed by the nozzle and the first pipe, and supplies a second liquid to the liquid flow passage through one of the sub-pipes; and a control unit that controls the first liquid supply system and the second liquid supply system on the basis of a plurality of operating conditions during the removal of a film formed on a substrate. The plurality of operating conditions are respectively associated with a plurality of portions of the substrate.

Description

Substrate processing apparatus and substrate processing method

[0001] The present invention relates to a substrate processing apparatus and a substrate processing method for removing an unnecessary film formed on one surface of a substrate.

[0002] Substrate processing apparatuses are used to perform various processes on substrates such as semiconductor substrates, substrates for FPDs (Flat Panel Displays) such as liquid crystal display devices or organic EL (Electro Luminescence) display devices, substrates for optical disks, substrates for magnetic disks, substrates for magneto-optical disks, substrates for photomasks, ceramic substrates, and substrates for solar cells.

[0003] In the substrate processing apparatus described in Patent Document 1, an unnecessary resist film formed on one surface of a substrate (wafer) is removed using SPM (sulfuric acid hydrogen peroxide mixture). More specifically, the substrate having the resist film is held in a horizontal position by a spin chuck and rotated around a vertical axis. In this state, an SPM nozzle is positioned above the rotating substrate, and SPM is supplied from the SPM nozzle toward the center of rotation of the substrate. The SPM is a sulfuric acid (H ２ SO ４ ) and hydrogen peroxide (H ２ O ２ The resist film on the substrate is peeled off and removed from one surface of the substrate by the oxidizing power of the SPM.

[0004] Japanese Patent Application Laid-Open No. 2008-4819

[0005] However, when SPM is supplied to a substrate having a resist film, multiple portions of the resist film are not necessarily removed uniformly. For example, the resist film formed on the substrate may include portions that are easy to remove from one surface of the substrate and portions that are difficult to remove from the one surface of the substrate due to factors such as variations in the thickness of the resist film and variations in the adhesion between the substrate and the resist film. Therefore, in order to reliably remove the portions of the resist film that are difficult to remove from one surface of the substrate, it is possible to extend the supply time of SPM to the substrate.

[0006] However, if SPM is supplied for a long period of time to a portion of the resist film that is easily removed from one surface of the substrate, SPM will be supplied for a long period of time to the exposed portion of the substrate after the resist film is removed. In this case, part of the substrate may be damaged by the oxidizing power of SPM. Furthermore, supplying SPM for a long period of time increases the amount of SPM used per substrate.

[0007] An object of the present invention is to provide a substrate processing apparatus and a substrate processing method that can remove an unwanted film formed on one surface of a substrate without damaging the substrate and reduce the amount of processing liquid used.

[0008] A substrate processing apparatus according to one aspect of the present invention is a substrate processing apparatus that performs a removal process to remove an unnecessary film formed on one surface of a substrate using a processing liquid containing Caro's acid, wherein the Caro's acid is generated by mixing one of sulfuric acid and hydrogen peroxide solution as a first liquid and the other of sulfuric acid and hydrogen peroxide solution as a second liquid, and the substrate processing apparatus includes a nozzle that ejects the processing liquid so as to impinge on a plurality of portions of the one surface of the substrate, and a first liquid supply system that supplies the first liquid to the nozzle through the first pipe. a second liquid supply system including a plurality of second pipes respectively connected to a plurality of mutually different portions of the liquid flow path formed by the nozzle and the first pipe, and supplying the second liquid to the liquid flow path through any of the plurality of second pipes; and a control unit that controls the first liquid supply system and the second liquid supply system based on a plurality of predetermined operating conditions during the removal process, wherein the plurality of operating conditions are conditions respectively associated with a plurality of portions of the substrate so that a processing liquid having a film removal ability corresponding to each portion collides with each of the plurality of portions on the one surface of the substrate.

[0009] A substrate processing method according to another aspect of the present invention is a substrate processing method using a substrate processing apparatus for performing a removal process to remove an unnecessary film formed on one surface of a substrate using a processing liquid containing Caro's acid, wherein the Caro's acid is generated by mixing one of sulfuric acid and hydrogen peroxide solution as a first liquid and the other of sulfuric acid and hydrogen peroxide solution as a second liquid, and the substrate processing apparatus includes a nozzle that ejects the processing liquid so as to impinge on a plurality of portions of the one surface of the substrate, a first liquid supply system that includes a first pipe connected to the nozzle and supplies the first liquid to the nozzle through the first pipe, and multiple liquid flow paths formed by the nozzle and the first pipe, each connected to a plurality of different portions of the liquid flow path. and a second liquid supply system including a plurality of second pipes, the second liquid being supplied into the first pipe through any one of the plurality of second pipes, and the substrate processing method includes the steps of: acquiring, for each of the plurality of portions on the one surface of the substrate, information relating to a film removal capability of a processing liquid to be supplied to that portion; setting, based on the acquired information, operating conditions of the first liquid supply system and the second liquid supply system corresponding to each of the plurality of portions of the substrate so that processing liquids having respective film removal capabilities corresponding to the plurality of portions on the one surface of the substrate impinge on the plurality of portions on the surface of the substrate; and controlling the first liquid supply system and the second liquid supply system based on the set operating conditions of the first liquid supply system and the second liquid supply system.

[0010] According to the present invention, it is possible to remove an unnecessary film formed on one surface of a substrate without damaging the substrate, and to reduce the amount of processing liquid used.

[0011] FIG. 1 is a schematic diagram showing the configuration of a substrate processing apparatus according to one embodiment of the present invention. FIG. 2 is a plan view of the substrate processing apparatus for explaining the functions of the nozzle support unit and the nozzle movement device of FIG. 1. FIG. 3 is a block diagram showing the configuration of a control system of the substrate processing apparatus of FIG. 1. FIG. 4 is a diagram showing an example of time-series changes in the stripping state of a resist film during a removal process. FIG. 5 is a diagram showing another example of time-series changes in the stripping state of a resist film during a removal process. FIG. 6 is a diagram showing a first specific example of a plurality of operating conditions set corresponding to multiple portions of a substrate W, respectively. FIG. 7 is a diagram showing a second specific example of a plurality of operating conditions set corresponding to multiple portions of a substrate W, respectively. FIG. 8 is a flowchart showing an example of a film removal process performed by the control unit of FIG. 1. FIG. 9 is a schematic diagram showing the configuration of a substrate processing apparatus according to another embodiment. FIG. 10 is a diagram showing an example of the configuration of three processing liquid supply devices according to another embodiment.

[0012] A substrate processing apparatus and a substrate processing method according to an embodiment of the present invention will be described below with reference to the drawings. In the following description, the term "substrate" refers to a substrate for a flat panel display (FPD) used in a liquid crystal display device or an organic electroluminescence (EL) display device, a semiconductor substrate, an optical disk substrate, a magnetic disk substrate, a magneto-optical disk substrate, a photomask substrate, a ceramic substrate, a solar cell substrate, or the like.

[0013] The substrate processing apparatus described below is a single-wafer type substrate processing apparatus used for a removal process to remove an unnecessary film (in this example, a resist film) formed on one surface (main surface) of a substrate. In the removal process according to this embodiment, a substrate having an unnecessary film formed on one surface thereof is rotated in a horizontal position. SPM (sulfuric acid hydrogen peroxide mixture) is supplied as a processing liquid onto one surface of the substrate. SPM is a mixture of sulfuric acid (H ２ SO ４ ) and hydrogen peroxide (H ２ O ２ ) and Caro's acid (H ２ SO ５Caro's acid is produced by a chemical reaction between sulfuric acid and hydrogen peroxide. It has strong oxidizing power and reacts with unwanted films to dissolve them, thereby peeling and removing the unwanted films from one side of the substrate.

[0014] 1 is a schematic diagram showing the configuration of a substrate processing apparatus according to one embodiment of the present invention. As shown in FIG. 1, the substrate processing apparatus 100 mainly includes a spin chuck 1, a cup 2, a cup lifting device 2D, three processing liquid supply devices 3A, 3B, and 3C, a nozzle support unit 4, a nozzle moving device 5, a control unit 6, and an operation unit 9.

[0015] The substrate processing apparatus 100 is at least partially installed in a chamber (not shown). The spin chuck 1 has a spin motor 1a, a spin base 1b, and chuck pins 1c. The spin motor 1a is installed at the bottom of the chamber so that its rotation shaft protrudes upward. The spin base 1b has a disk shape and is attached horizontally to the upper end of the rotation shaft of the spin motor 1a. Multiple chuck pins 1c are installed on the upper surface of the spin base 1b and hold the peripheral edge of the substrate W. The spin motor 1a operates with the multiple chuck pins 1c holding the substrate W. This causes the substrate W to rotate around a vertical axis.

[0016] As described above, in this example, a mechanical spin chuck 1 is used to hold the peripheral portion of the substrate W. However, the present invention is not limited to this, and instead of the mechanical spin chuck, a suction-type spin chuck that suction-holds the lower surface of the substrate W may be used.

[0017] A cup 2 is provided to surround the spin chuck 1. The cup 2 is supported so as to be movable up and down by a cup lifting device 2D. The cup lifting device 2D includes an air cylinder or the like, and moves the cup 2 between two predetermined height positions (an upper position and a lower position, which will be described later).

[0018] The three processing liquid supply devices 3A, 3B, and 3C basically have the same configuration. Fig. 1 shows the details of the configuration of only the processing liquid supply device 3C. The configuration of the processing liquid supply device 3C will be described as a representative of the three processing liquid supply devices 3A, 3B, and 3C.

[0019] The processing liquid supply apparatus 3C is mainly composed of a first liquid supply system 10, a second liquid supply system 20, and a nozzle 30. The first liquid supply system 10 includes a first liquid supply source 11, a first pipe 12, a valve 12a, an adjustment unit 12b, and an agitation unit 12c. The first liquid supply source 11 is a sulfuric acid supply source and is composed of a factory utility facility or a liquid delivery device including a liquid storage unit. The upstream end of the first pipe 12 is connected to the first liquid supply source 11. The downstream end of the first pipe 12 is connected to the nozzle 30. The valve 12a, the adjustment unit 12b, and the agitation unit 12c are provided in the first liquid supply source 11 so as to be aligned in this order from the upstream end to the downstream end of the first liquid supply source 11.

[0020] The valve 12a is, for example, a ball valve, and when open, allows the liquid to flow through the first pipe 12, and when closed, blocks the liquid from flowing through the first pipe 12. The adjustment unit 12b includes a flow adjuster such as a motorized needle valve or a regulator, and adjusts the flow rate of the liquid flowing through the first pipe 12. In this example, the adjustment unit 12b is a motorized needle valve. The agitation unit 12c is, for example, an in-line mixer, and generates a vortex or the like in the first pipe 12 to mix the multiple types of liquid (sulfuric acid and hydrogen peroxide solution in this example) flowing through the first pipe 12.

[0021] In this embodiment, in the liquid flow path formed by the first pipe 12 and the nozzle 30, the portion located between the adjustment unit 12b and the stirring unit 12c is called a first portion MP1. Furthermore, the portion located between the stirring unit 12c and the nozzle 30 is called a second portion MP2, and the portion located at the nozzle 30 is called a third portion MP3.

[0022] The second liquid supply system 20 includes a second liquid supply source 21, a second main pipe 22, a plurality of (three in this example) second sub-pipes 23, 24, and 25, a plurality of (three in this example) valves 23 a, 24 a, and 25 a, and a plurality of (three in this example) adjustment units 23 b, 24 b, and 25 b. The second liquid supply source 21 is a supply source of hydrogen peroxide solution, and, similar to the example of the first liquid supply source 11, is composed of a factory utility facility or a liquid delivery device including a liquid storage unit.

[0023] The upstream end of the second main pipe 22 is connected to the second liquid supply source 21. The second main pipe 22 has multiple (two in this example) branch sections aligned from upstream to downstream. The upstream ends of the second sub-pipes 23, 24, and 25 are connected to the upstream branch section of the second main pipe 22, the downstream branch section of the second main pipe 22, and the downstream end of the second main pipe 22, respectively. Meanwhile, the downstream ends of the second sub-pipes 23, 24, and 25 are connected to the first portion MP1, the second portion MP2, and the third portion MP3 of the liquid flow path, respectively.

[0024] The second sub-pipe 23 is provided with a valve 23a and an adjustment unit 23b lined up in this order from upstream to downstream. The second sub-pipe 24 is provided with a valve 24a and an adjustment unit 24b lined up in this order from upstream to downstream. The second sub-pipe 25 is provided with a valve 25a and an adjustment unit 25b lined up in this order from upstream to downstream.

[0025] Valves 23a, 24a, and 25a have the same configuration as valve 12a. Adjustment units 23b, 24b, and 25b have the same configuration as adjustment unit 12b. Note that some of valves 12a, 23a, 24a, and 25a may have a different configuration from the other valves. Note that some of adjustment units 12b, 23b, 24b, and 25b may have a different configuration from the other adjustment units.

[0026] In each of the three processing liquid supply devices 3A, 3B, and 3C, a portion of the components of the first liquid supply system 10 and a portion of the components of the second liquid supply system 20 are supported by, for example, an arm member 7 (FIG. 2) made of hard resin.

[0027] 2 is a plan view of the substrate processing apparatus 100 for explaining the functions of the nozzle support unit 4 and the nozzle moving device 5 in FIG. 2. As shown in the upper part of FIG. 2, rails 5r are provided on the bottom of the chamber, beside the spin chuck 1 and the cup 2 in a plan view. The rails 5r are provided so as to extend in one direction at positions close to the spin chuck 1 and the cup 2. In the following description, the direction in which the rails 5r extend in a plan view is referred to as the rail direction. Furthermore, a straight line passing through the center of the substrate W held by the spin chuck 1 and extending in the rail direction in a plan view is referred to as a virtual line VL.

[0028] The arm members 7 corresponding to each of the three processing liquid supply devices 3A, 3B, and 3C have, for example, a rod shape and support the nozzles 30 at their tips. The nozzle support unit 4 supports the three arm members 7 so that the three nozzles 30 are aligned on the imaginary line VL, and is provided on a rail 5r so as to be movable in the rail direction. A motor that constitutes part of the nozzle movement device 5 is attached to the nozzle support unit 4. As a result, the nozzle support unit 4 moves on the rail 5r when the nozzle movement device 5 operates.

[0029] In the substrate processing apparatus 100, a standby position WP is set at a position on the virtual line VL offset from the spin chuck 1 and the cup 2 in a plan view. A processing position PP is also set at a position on the virtual line VL overlapping the spin chuck 1 in a plan view. When the substrate processing apparatus 100 is in a standby state where a removal process is not being performed, the three nozzles 30 of the three processing liquid supply devices 3A, 3B, and 3C are held at the standby position WP in a plan view, as shown in the upper part of Fig. 2. On the other hand, when the substrate processing apparatus 100 is performing a removal process, the three nozzles 30 of the three processing liquid supply devices 3A, 3B, and 3C are held at the processing position PP in a plan view, as shown in the lower part of Fig. 2.

[0030] In this embodiment, during the removal process, the three nozzles 30 are held at the processing position PP, and are positioned at predetermined positions relative to the substrate W held by the spin chuck 1 .

[0031] Specifically, the nozzle 30 of the processing liquid supplying apparatus 3A is positioned so as to overlap the central portion of the substrate W (an inner portion R1 ( FIG. 4 , etc., to be described later) in a plan view. The nozzle 30 of the processing liquid supplying apparatus 3B is positioned so as to overlap the intermediate portion between the center of the substrate W and the outer peripheral edge of the substrate W (an intermediate portion R2 ( FIG. 4 , etc., to be described later) in a plan view. The nozzle 30 of the processing liquid supplying apparatus 3C is positioned so as to overlap the peripheral portion of the substrate W (an outer portion R3 ( FIG. 4 , etc., to be described later)) in a plan view. With the nozzles 30 positioned in this manner, the nozzles 30 are supported so that the outlets of the nozzles 30 face one surface of the substrate W. As a result, during the removal process, the processing liquid is ejected from the outlets of the nozzles 30 toward three portions on one surface of the substrate W. The ejected processing liquid collides with one surface of the substrate W (more precisely, one surface of the substrate W or a resist film covering one surface of the substrate W).

[0032] The substrate processing apparatus 100 according to this embodiment includes a rinse nozzle (not shown) and a rinse liquid supply system (not shown) that supplies a rinse liquid to the rinse nozzle. After the resist film has been removed by the processing liquid, the rinse nozzle ejects the rinse liquid toward one surface of the substrate W on which the processing liquid remains. This removes the processing liquid from the substrate W (rinsing process). The control unit 6 and the operation unit 9 will be described in detail later.

[0033] <2> Control System of Substrate Processing Apparatus The control system of the substrate processing apparatus 100 will be described together with the configuration of the control unit 6 and operation unit 9 in Fig. 1. Fig. 3 is a block diagram showing the configuration of the control system of the substrate processing apparatus 100 in Fig. 1. As shown in Fig. 3, the control unit 6 includes a CPU (Central Processing Unit) 61, a RAM (Random Access Memory) 62, a ROM (Read Only Memory) 63, and a storage device 64.

[0034] The RAM 62 is used as a working area for the CPU 61. The ROM 63 stores a system program. The storage device 64 includes a storage medium such as a hard disk or a semiconductor memory, and stores a film removal program for performing the removal process. The storage device 64 also stores a plurality of operating conditions for the substrate processing apparatus 100 related to the removal process. The plurality of operating conditions are conditions respectively associated with a plurality of portions of the substrate W that are to be subjected to the removal process. The plurality of operating conditions will be described in detail below.

[0035] The film removal program may be provided in a state stored in a recording medium such as a CD-ROM 65, and may be installed in the ROM 63 or the storage device 64. Alternatively, the film removal program may be distributed from a server external to the substrate processing apparatus 100 via a communication network, and may be installed in the ROM 63 or the storage device 64.

[0036] The CPU 61 executes the film removal program to control the operation of each part of the substrate processing apparatus 100 during the removal process. Specifically, the control unit 6 controls the spin motor 1 a to rotate the substrate W while the substrate W is placed on the spin base 1 b and held by a plurality of chuck pins 1 c.

[0037] Furthermore, the control unit 6 controls the cup lifting device 2D so that the cup 2 is held in the lower position when the substrate W is placed on the spin chuck 1, when the substrate W is removed from the spin chuck 1, and when no removal process is being performed. Here, the lower position refers to the position of the cup 2 when the upper end of the cup 2 is lower than the substrate W held by the spin chuck 1.

[0038] Furthermore, the control unit 6 controls the cup lifting device 2D so that the cup 2 is held in the upper position during the removal process. Here, the upper position refers to the position of the cup 2 when the upper end of the cup 2 is higher than the substrate W held by the spin chuck 1 and the inner peripheral surface of the cup 2 faces the outer peripheral edge of the substrate W in a horizontal plane. In this case, the processing liquid splashed from the substrate W during the removal process is received by the inner peripheral surface of the cup 2. The processing liquid received by the cup 2 is discarded through a drain pipe.

[0039] Furthermore, the control unit 6 controls the nozzle moving device 5 so that the three nozzles 30 of the three processing liquid supply devices 3A, 3B, and 3C are held at the processing position PP while the removal process is being performed. Furthermore, the control unit 6 controls the nozzle moving device 5 so that the three nozzles 30 of the three processing liquid supply devices 3A, 3B, and 3C are held at the standby position WP while the removal process is not being performed.

[0040] As described above, a plurality of operating conditions for the substrate processing apparatus 100 related to the removal process are stored in the storage device 64 of the control unit 6. The plurality of operating conditions includes information on the operation of each of the plurality of valves 12 a, 23 a, 24 a, 25 a and the plurality of adjustment units 12 b, 23 b, 24 b, 25 b of the three processing liquid supply devices 3A, 3B, 3C.

[0041] During the removal process, the control unit 6 controls the multiple valves 12a, 23a, 24a, and 25a and the multiple adjustment units 12b, 23b, 24b, and 25b of the three processing liquid supply devices 3A, 3B, and 3C based on multiple operating conditions. In this case, in each of the processing liquid supply devices 3A, 3B, and 3C, while sulfuric acid flows through the first pipe 12, hydrogen peroxide solution is supplied from the second liquid supply system 20 to at least two of the first portion MP1, the second portion MP2, and the third portion MP3 of the liquid flow path. As a result, sulfuric acid and hydrogen peroxide solution are mixed multiple times within the liquid flow path to generate the processing liquid (SPM).

[0042] 1 includes a keyboard and a pointing device and is configured to be operable by the user. The user can input the above-mentioned multiple operating conditions by operating the operating unit 9. When multiple operating conditions are input through the operating unit 9, the control unit 6 stores the input operating conditions in the storage device 64.

[0043] <3> Ease of film removal and film removal ability of treatment solution In the following explanation, the degree of ease of removal of the resist film during removal treatment is referred to as "ease of removal." "High ease of removal" means that the resist film is easily removed, and "low ease of removal" means that the resist film is difficult to remove.

[0044] The removability of one substrate W may differ from one another in multiple parts of one surface of the substrate W depending on the material constituting the resist film formed on the one substrate W, the thickness distribution of the resist film, and the distribution of adhesion between the resist film and the substrate W. The distribution of removability on one surface of one substrate W can be understood to some extent by previously subjecting a sample substrate of the same type as the one substrate W to a removal process or by simulating the removal process.

[0045] In the following description, the ability of the processing liquid to remove the resist film is referred to as the “film removal ability.” The degree of film removal ability indicates the reactivity of the processing liquid with the resist film formed on the substrate W, and is determined mainly by the Caro's acid concentration in the processing liquid.

[0046] 4 is a diagram showing an example of a time-series change in the stripping state of a resist film during removal processing. In Fig. 4, plan views showing the state of the resist film when a processing liquid having a common film removal ability is supplied to the entire surface of a substrate W are shown in chronological order in the upper, middle, and lower rows. In each of the upper, middle, and lower rows of Fig. 4, the resist film present on the substrate W is shown by a dot pattern.

[0047] The time-series change in the peeling state of the resist film as shown in FIG. 4 can be obtained, for example, by capturing images of one surface of the substrate W during the removal process with a camera every predetermined time.

[0048] Here, an inner portion R1, a middle portion R2, and an outer portion R3 are defined on one surface of the substrate W. The inner portion R1 is located at the center of the substrate W. The middle portion R2 has a circular ring shape and surrounds the inner portion R1. The outer portion R3 has a circular ring shape that includes the outer peripheral edge of the substrate W and surrounds the middle portion R2. The radius of the inner portion R1, the width of the middle portion R2 in the radial direction of the substrate W, and the width of the outer portion R3 in the radial direction of the substrate W are all equal to one another.

[0049] 4, after the removal process is started, the resist film is successively removed from the central portion of the substrate W toward the outer peripheral edge of the substrate W. Therefore, it can be seen that the substrate W corresponding to the example of Fig. 4 has a high removability in the inner portion R1, a medium removability in the middle portion R2, and a low removability in the outer portion R3.

[0050] 4, it is preferable to supply a processing liquid having a low film removal capability to the inner portion R1. In this case, supplying a processing liquid having a low film removal capability to the inner portion R1 can prevent the inner portion R1 on one surface of the substrate W from being damaged during the removal process.

[0051] 4, it is preferable to supply a processing liquid having a high film removal ability to the outer portion R3. In this case, by supplying a processing liquid having a high film removal ability to the outer portion R3, the resist film on the outer portion R3 can be efficiently removed during the removal process. In other words, the processing time required to remove the resist film on the outer portion R3 can be reduced.

[0052] Furthermore, it can be seen that for the substrate W corresponding to the example of FIG. 4, it is preferable to supply a processing liquid having a medium film removal ability to the middle portion R2.

[0053] Fig. 5 is a diagram showing another example of the time-series change in the peeling state of the resist film during removal processing. In Fig. 5, similar to the example of Fig. 4, plan views showing the state of the resist film when a processing liquid having a common film removal ability is supplied to the entire surface of the substrate W are shown in chronological order in the upper, middle, and lower rows. In each of the upper, middle, and lower rows of Fig. 5, the resist film present on the substrate W is shown by a dot pattern.

[0054] 5, after the removal process is started, the resist film is successively removed from the outer peripheral edge of the substrate W toward the center of the substrate W. Therefore, it can be seen that the substrate W corresponding to the example of Fig. 5 has low removability in the inner portion R1, medium removability in the middle portion R2, and high removability in the outer portion R3.

[0055] Therefore, it can be seen that for a substrate W corresponding to the example of Fig. 5, it is preferable to supply a processing liquid with high film removal ability to the inner portion R1. It can also be seen that for a substrate W corresponding to the example of Fig. 5, it is preferable to supply a processing liquid with low film removal ability to the outer portion R3. It can also be seen that it is preferable to supply a processing liquid with medium film removal ability to the middle portion R2.

[0056] 4 and 5, the distribution of removability of the resist film on the substrate W can be grasped to some extent by previously subjecting a sample substrate W to a removal process or by performing a simulation. Furthermore, according to the grasped distribution of removability, it is possible to predict the film removal ability of the processing liquid to be supplied to each of the multiple portions of the substrate W, as described above.

[0057] In this embodiment, the film removal capability of the processing liquid to be supplied to each of the plurality of portions of the substrate W is predicted according to the ease of removal of the resist film on one surface of the substrate W to be processed. Then, information indicating the relationship between each of the plurality of portions of the substrate W and the preferred film removal capability corresponding to that portion is acquired as substrate portion information.

[0058] 1, three processing liquid supply devices 3A, 3B, and 3C are provided corresponding to the inner portion R1, the middle portion R2, and the outer portion R3 of the substrate W, respectively. The film removal capability of the processing liquid discharged from the nozzle 30 of each of the processing liquid supply devices 3A, 3B, and 3C can be adjusted by controlling the operation of each part of the first liquid supply system 10 and the second liquid supply system 20 of the processing liquid supply device.

[0059] Therefore, in this embodiment, operating conditions for the first liquid supply system 10 and the second liquid supply system 20 of the processing liquid supply apparatus 3A corresponding to the inner portion R1 of the substrate W are determined based on the acquired substrate portion information. Furthermore, operating conditions for the first liquid supply system 10 and the second liquid supply system 20 of the processing liquid supply apparatus 3B corresponding to the middle portion R2 of the substrate W are determined based on the substrate portion information. Furthermore, operating conditions for the first liquid supply system 10 and the second liquid supply system 20 of the processing liquid supply apparatus 3C corresponding to the outer portion R3 of the substrate W are determined based on the substrate portion information. Furthermore, a plurality of operating conditions corresponding to each of a plurality of portions of the substrate W (in this example, the inner portion R1, the middle portion R2, and the outer portion R3) are input by, for example, the user operating the operation unit 9, and stored in the storage device 64 of FIG. 3 .

[0060] <4> Relationship between film removal ability of processing liquid and operating conditions of processing liquid supply device As described above, the degree of film removal ability indicates the reactivity of the processing liquid with respect to the resist film formed on the substrate W, and is determined mainly by the Caro's acid concentration of the processing liquid. In each of the three processing liquid supply devices 3A, 3B, and 3C in Fig. 1, the film removal ability of the processing liquid discharged from the nozzle 30 can be adjusted by controlling the multiple valves 12a, 23a, 24a, and 25a and the multiple adjustment units 12b, 23b, 24b, and 25b.

[0061] Here, with reference to FIG. 1 , the mechanism by which Caro's acid is generated in the processing solution in each of the processing solution supply devices 3A, 3B, and 3C will be described. To eject the processing solution from the nozzle 30, first, the valve 12a is opened. The flow rate regulator 12b is controlled so that sulfuric acid flows at a predetermined flow rate in the first pipe 12. Furthermore, the valve 23a is opened, and the flow rate regulator 23b is controlled so that hydrogen peroxide flows at a predetermined flow rate in the second sub-pipe 23. In this case, the sulfuric acid and hydrogen peroxide join at the first section MP1 in the first pipe 12 and are sent to the agitator 12c. The sulfuric acid and hydrogen peroxide are agitated in the agitator 12c. This promotes a chemical reaction between the sulfuric acid and the hydrogen peroxide, resulting in the generation of Caro's acid.

[0062] Heat is generated during the production of Caro's acid. As a result, the temperature of the treatment liquid (liquid mixture) flowing through the agitation section 12c rises. When the temperature of the treatment liquid exceeds a predetermined temperature (for example, the boiling point of hydrogen peroxide), a portion of the hydrogen peroxide (hydrogen peroxide that does not contribute to the production of Caro's acid) is more likely to decompose into water and oxygen. Therefore, there is a limit to the amount of Caro's acid produced in the range from the first section MP1 of the first pipe 12 to the agitation section 12c.

[0063] Therefore, in the above-mentioned processing liquid supply devices 3A, 3B, and 3C, it is possible to supply new hydrogen peroxide solution to the second portion MP2 and the third portion MP3 of the liquid flow path passing through the first pipe 12, which are downstream of the stirring portion 12c.

[0064] For example, while Caro's acid is being generated in the agitation unit 12c as described above, the valve 24a is opened and the adjustment unit 24b is controlled so that hydrogen peroxide solution flows at a predetermined flow rate in the second sub-pipe 24. In this case, new hydrogen peroxide solution that has not been heated to a high temperature is supplied to the second section MP2, thereby generating new Caro's acid. As a result, the concentration of Caro's acid in the treatment liquid flowing through the first pipe 12 downstream of the second section MP2 is higher than that in the treatment liquid flowing through the agitation unit 12c.

[0065] Alternatively, while Caro's acid is being generated in the agitation unit 12c as described above, the valve 25a is opened and the adjustment unit 25b is controlled so that hydrogen peroxide solution flows at a predetermined flow rate in the second sub-pipe 25. In this case, new hydrogen peroxide solution that has not been heated to a high temperature is supplied to the third portion MP3, thereby generating new Caro's acid. As a result, the concentration of Caro's acid in the treatment solution discharged from the nozzle 30 becomes higher than that of the treatment solution flowing through the agitation unit 12c.

[0066] As a result of various experiments and simulations, the inventors have confirmed that the Caro's acid concentration in the treatment liquid varies depending on the mixing ratio of sulfuric acid and hydrogen peroxide solution in each of the multiple sections (MP1, MP2, MP3) of the liquid flow path. Based on this, the inventors have discovered that when sulfuric acid and hydrogen peroxide solution are mixed in multiple sections (MP1, MP2, MP3) of the liquid flow path, the Caro's acid concentration in the treatment liquid discharged from the nozzle 30 tends to be higher by increasing the mixing ratio of hydrogen peroxide solution to sulfuric acid in the downstream section compared to the upstream section.

[0067] Additionally, the inventors have found that the Caro's acid concentration in the treatment solution produced by mixing sulfuric acid and hydrogen peroxide at a predetermined ratio in the first portion MP1 and the second portion MP2 tends to be higher than the Caro's acid concentration in the treatment solution produced by mixing sulfuric acid and hydrogen peroxide at a predetermined ratio in the first portion MP1 and the third portion MP3. In other words, the inventors have found that the Caro's acid concentration in the treatment solution discharged from the nozzle 30 tends to be higher the farther from the nozzle 30 in the liquid flow path the portion to which hydrogen peroxide is added is.

[0068] Based on the findings obtained, the inventors have considered setting the operating conditions of the processing solution supplying devices 3A, 3B, and 3C so as to generate processing solutions having film removal capabilities corresponding to the respective portions of the substrate, i.e., processing solutions having Caro's acid concentrations corresponding to the respective portions of the substrate.

[0069] <5> First specific example of multiple operating conditions In the following description, when distinguishing between multiple second sub-pipes 23, 24, and 25 in one processing liquid supply device, the second sub-pipe 23 will be referred to as "pipe A," the second sub-pipe 24 will be referred to as "pipe B," and the second sub-pipe 25 will be referred to as "pipe C."

[0070] Fig. 6 is a diagram showing a first specific example of a plurality of operating conditions set corresponding to a plurality of portions of a substrate W. Fig. 6 shows, in a table, the operating conditions of three processing liquid supply devices 3A, 3B, and 3C set for an inner portion R1, a middle portion R2, and an outer portion R3 of the substrate W, respectively. Below the table, an explanatory diagram of the plurality of portions of the substrate W is shown to facilitate understanding of the table. Furthermore, a configuration diagram of each processing liquid supply device 3A, 3B, and 3C is shown to facilitate understanding of the table.

[0071] 6 is set for a substrate W having a resist film with high removability in the inner portion R1, slightly higher removability in the middle portion R2, and low removability in the outer portion R3. In this case, for the substrate W, it is preferable to supply a processing liquid with low film removal ability to the inner portion R1, it is preferable to supply a processing liquid with slightly lower film removal ability to the middle portion R2, and it is preferable to supply a processing liquid with high film removal ability to the outer portion R3.

[0072] Therefore, in this example, as an operating condition of the treatment liquid supply device 3A corresponding to the internal portion R1, the target ratio of the flow rates of the liquids flowing through the first pipe 12, pipe A, pipe B and pipe C is set to 100:10:0:90 so that the Caro's acid concentration of the treatment liquid generated is low.

[0073] In addition, in this example, as an operating condition of the treatment liquid supply device 3B corresponding to the middle section R2, the target ratio of the flow rates of the liquids flowing through the first pipe 12, pipe A, pipe B and pipe C is set to 100:20:0:80 so that the Caro's acid concentration of the treatment liquid generated is slightly low.

[0074] Furthermore, in this example, as an operating condition of the treatment liquid supply device 3C corresponding to the external portion R3, the target ratio of the flow rates of the liquids flowing through the first pipe 12, pipe A, pipe B and pipe C is set to 100:30:70:0 so that the Caro's acid concentration of the treatment liquid generated is high.

[0075] 6, the valves 12a, 23a, 24a, and 25a are opened in the processing liquid supply apparatus 3A. Furthermore, the adjusting units 12b, 23b, 24b, and 25b are controlled so that the ratio of the flow rates of the liquids flowing through the first pipe 12, the pipe A, the pipe B, and the pipe C becomes the target ratio of 100:10:0:90. In this case, since the target ratio for the pipe B is 0, the valve 24a for the pipe B may be closed.

[0076] In addition, in the processing liquid supply device 3B, the valves 12a, 23a, 24a, and 25a are opened. Furthermore, the adjusting units 12b, 23b, 24b, and 25b are controlled so that the ratio of the flow rates of the liquids flowing through the first pipe 12, pipe A, pipe B, and pipe C becomes the target ratio of 100:20:0:80. In this case, since the target ratio for pipe B is 0, the valve 24a for pipe B may be closed.

[0077] In addition, in the processing liquid supply apparatus 3C, the valves 12a, 23a, 24a, and 25a are opened. Furthermore, the adjusting units 12b, 23b, 24b, and 25b are controlled so that the ratio of the flow rates of the liquids flowing through the first pipe 12, pipe A, pipe B, and pipe C becomes the target ratio of 100:30:70:0. In this case, since the target ratio for pipe C is 0, the valve 25a for pipe B may be closed.

[0078] <6> Second Specific Example of Multiple Operating Conditions Figure 7 is a diagram showing a second specific example of multiple operating conditions set corresponding to multiple portions of a substrate W. In Figure 7, similar to the example of Figure 6, the operating conditions of three processing liquid supply devices 3A, 3B, and 3C set for the inner portion R1, middle portion R2, and outer portion R3 of the substrate W, respectively, are shown in a table. In addition, an explanatory diagram of the multiple portions of the substrate W is shown below the table to make the table easier to understand. Furthermore, a configuration diagram of each processing liquid supply device 3A, 3B, and 3C is shown to make the table easier to understand.

[0079] 7 is set for a substrate W having a resist film with high removability in the inner portion R1, high removability in the middle portion R2, and low removability in the outer portion R3. In this case, for the substrate W, it is preferable to supply a processing liquid with low film removal ability to the inner portion R1, it is preferable to supply a processing liquid with low film removal ability to the middle portion R2, and it is preferable to supply a processing liquid with high film removal ability to the outer portion R3.

[0080] In this example, in the three treatment liquid supply devices 3A, 3B, and 3C, when the valve 12a is in the open state, the flow rate of the liquid flowing through the first pipe 12 is assumed to be predetermined. Also, when the valves 23a, 24a, and 25a are in the open state, the flow rates of the liquid flowing through the pipes A, B, and C are assumed to be predetermined. In this case, the Caro's acid concentration of the treatment liquid discharged from the nozzle 30 varies depending on the open / close states of the valve 12a of the first pipe 12, the valve 23a of the pipe A, the valve 24a of the pipe B, and the valve 25a of the pipe C.

[0081] Therefore, in this example, as the operating conditions of the treatment liquid supply device 3A corresponding to the internal portion R1, the opening / closing states of the valves 12a, 23a, 24a, and 25a are set to "open," "open," "closed," and "open," respectively, so that the Caro's acid concentration of the treatment liquid generated is low.

[0082] In addition, in this example, as the operating conditions of the treatment liquid supply device 3B corresponding to the middle section R2, the opening / closing states of the valves 12a, 23a, 24a, and 25a are set to "open," "open," "closed," and "open," respectively, so that the Caro's acid concentration of the treatment liquid generated is low.

[0083] Furthermore, in this example, as an operating condition of the treatment liquid supply device 3C corresponding to the external portion R3, the opening / closing states of the valves 12a, 23a, 24a, and 25a are set to "open," "open," "open," and "closed," respectively, so that the Caro's acid concentration of the treatment liquid generated is high.

[0084] 7, in the processing liquid supply apparatus 3A, the valves 12a, 23a, and 25a are open and the valve 24a is closed. In the processing liquid supply apparatus 3B, the valves 12a, 23a, and 25a are open and the valve 24a is closed. In the processing liquid supply apparatus 3C, the valves 12a, 23a, and 24a are open and the valve 25a is closed. The plurality of adjusting units 12b, 23b, 24b, and 25b are controlled so that the first pipe 12, the pipe A, the pipe B, and the pipe C are in states corresponding to predetermined flow rates, respectively.

[0085] <7> Film Removal Processing by Control Unit 6 Fig. 8 is a flowchart showing an example of film removal processing by the control unit 6 of Fig. 1. The film removal processing described below is performed by the CPU 61 of the control unit 6 executing a film removal program stored in the storage device 64 on the RAM 62.

[0086] The film removal process by the control unit 6 is initiated, for example, in response to an unprocessed substrate W (a substrate W having a resist film formed on its entire surface) being loaded into the chamber of the substrate processing apparatus 100 and placed on the spin chuck 1. In the initial state, the cup 2 is in the lower position, and the plurality of nozzles 30 are in the standby position WP. Also, the plurality of valves 12a, 23a, 24a, 25a of the three processing liquid supply devices 3A, 3B, 3C are all maintained in a closed state. Furthermore, the memory device 64 of the control unit 6 stores a plurality of operating conditions for the three processing liquid supply devices 3A, 3B, 3C, respectively, corresponding to a plurality of portions (inner portion R1, middle portion R2, and outer portion R3) of the substrate W to be processed.

[0087] When the film removal process is started, the CPU 61 controls the cup lifting device 2D to move the cup 2 from the lower position to the upper position (step S11). The CPU 61 also controls the spin motor 1a to rotate the substrate W held by the multiple chuck pins 1c on the spin base 1b (step S12). The CPU 61 also controls the nozzle moving device 5 to move the three nozzles 30 of the three processing liquid supply devices 3A, 3B, and 3C from the standby position WP to the processing position PP (step S13).

[0088] Next, the CPU 61 reads a plurality of operating conditions stored in the storage device 64 (step S14). Next, the CPU 61 controls the valves 12a, 23a, 24a, 25a and the adjusters 12b, 23b, 24b, 25b of the three processing liquid supply devices 3A, 3B, 3C based on the read operating conditions (step S15). As a result, processing liquids having corresponding film removal capabilities are supplied to the inner portion R1, middle portion R2, and outer portion R3 of the substrate W, respectively.

[0089] In this example, it is assumed that the supply time of the processing liquid for removing the resist film is predetermined. Therefore, the CPU 61 measures the elapsed time from the start of processing in step S15. The CPU 61 also determines whether to stop supplying the processing liquid based on whether the measured time has reached the predetermined supply time (step S16).

[0090] If the supply of the processing liquid should not be stopped, the CPU 61 repeats the process of step S16. On the other hand, if the supply of the processing liquid should be stopped, the CPU 61 closes the valves 12a, 23a, 24a, and 25a of the three processing liquid supply devices 3A, 3B, and 3C, thereby stopping the supply of the processing liquid (step S17).

[0091] Next, the CPU 61 controls the nozzle moving device 5 to move the three nozzles 30 of the three processing liquid supply devices 3A, 3B, and 3C from the processing position PP to the standby position WP (step S18). The CPU 61 also controls a rinse liquid supply system (not shown) and the spin motor 1a to perform a rinse process and a drying process on the substrate W from which the resist film has been removed (step S19). The drying process in step S19 is a so-called spin drying process in which the substrate W after the rinse process is dried by rotating it at high speed.

[0092] After the drying process in step S19 is completed, the CPU 61 controls the spin motor 1a to stop the rotation of the substrate W (step S20), and controls the cup lifting device 2D to move the cup 2 from the upper position to the lower position (step S21), thereby completing the series of processes.

[0093] <8> Effects (a) In the substrate processing method according to the present embodiment, substrate portion information is obtained as information regarding the film removal capacity of the processing liquid to be supplied to each of multiple portions on one surface of the substrate W. Based on the substrate portion information, operating conditions of the three processing liquid supply devices 3A, 3B, 3C are set in the substrate processing apparatus 100.

[0094] During removal processing by the substrate processing apparatus 100, the three processing liquid supply devices 3A, 3B, and 3C are controlled to comply with a plurality of operating conditions corresponding to a plurality of portions (inner portion R1, middle portion R2, and outer portion R3) of one surface of the substrate W. By appropriately setting the plurality of operating conditions, processing liquids having appropriate film removal capabilities for removing the resist film are respectively supplied to and impinge on the plurality of portions of one surface of the substrate W. The film removal capabilities of the processing liquid are most effective when the processing liquid is ejected from the nozzle 30 and reaches (impinges on) the resist film on the substrate W. This prevents unwanted resist film from remaining on a portion of the surface of the substrate W or damage to that portion of the surface of the substrate W. Furthermore, it is no longer necessary to supply a large amount of processing liquid to a portion of the substrate W where the resist film is less easily removable in order to remove the resist film formed thereon.

[0095] As a result, it is possible to remove the unnecessary resist film formed on the one surface of the substrate W without damaging the one surface of the substrate W, and to reduce the amount of processing liquid used.

[0096] (b) In the substrate processing apparatus 100 described above, three processing liquid supply devices 3A, 3B, and 3C are used to respectively correspond to three portions of a substrate W. The three nozzles 30 of the three processing liquid supply devices 3A, 3B, and 3C are moved between a standby position WP and a processing position PP by the nozzle support 4 and the nozzle moving device 5. When the three nozzles 30 are positioned at the processing position PP, the three nozzles 30 face the inner portion R1, the middle portion R2, and the outer portion R3 of one surface of the substrate W, respectively. Therefore, by simultaneously operating the three processing liquid supply devices 3A, 3B, and 3C, processing liquid can be simultaneously supplied from the three nozzles 30 to multiple portions of the substrate W (the inner portion R1, the middle portion R2, and the outer portion R3). This shortens the time required for removal processing compared to when processing liquid is sequentially supplied to multiple portions of one surface of the substrate W using one nozzle 30. As a result, contamination of the substrate W, such as particle adhesion, caused by a longer processing time is prevented.

[0097] <9> Other embodiments (a) The substrate processing apparatus 100 according to the above embodiment is provided with processing liquid supply devices 3A, 3B, and 3C corresponding to the inner portion R1, middle portion R2, and outer portion R3 of the substrate W, respectively, but the present invention is not limited to this.

[0098] The substrate processing apparatus 100 may have only one processing liquid supply device. Figure 9 is a schematic diagram showing the configuration of a substrate processing apparatus 100 according to another embodiment. The substrate processing apparatus 100 of Figure 9 has only one processing liquid supply device 3 as a configuration for supplying a processing liquid to a substrate W. In the substrate processing apparatus 100, the arm member 7 (see Figure 2) of the processing liquid supply device 3 is moved in the rail direction during removal processing. As a result, the processing liquid ejected from one nozzle 30 is sequentially supplied to multiple portions on one surface of the substrate W.

[0099] Here, in this example as well, before the removal process is performed, a plurality of operating conditions corresponding to a plurality of portions of the substrate W are set in the substrate processing apparatus 100. As a result, during the removal process, the control of the operating state of each portion of the processing liquid supply apparatus 3 is switched depending on the portion of the substrate W that the nozzle 30 faces.

[0100] For example, assume that the plurality of operating conditions shown in Fig. 6 are set for the substrate processing apparatus 100 shown in Fig. 9. In this case, after the start of the removal process, for example, the nozzle 30 is positioned to face the inner portion R1 of the substrate W. In this state, the valves 12a, 23a, 24a, and 25a are opened. Furthermore, the adjusting units 12b, 23b, 24b, and 25b are each controlled so that the ratio of the flow rates of the liquids flowing through the first pipe 12, pipe A, pipe B, and pipe C becomes the target ratio of 100:10:0:90.

[0101] Next, when removal of the resist film from the inner portion R1 of the substrate W is completed, the nozzle 30 is positioned to face the middle portion R2 of the substrate W. In this state, the valves 12 a, 23 a, 24 a, and 25 a are opened. Furthermore, the adjustment units 12 b, 23 b, 24 b, and 25 b are controlled so that the ratio of the flow rates of the liquids flowing through the first pipe 12, pipe A, pipe B, and pipe C becomes the target ratio of 100:20:0:80.

[0102] Next, when removal of the resist film from the middle portion R2 of the substrate W is completed, the nozzle 30 is positioned to face the outer portion R3 of the substrate W. In this state, the valves 12 a, 23 a, 24 a, and 25 a are opened. Furthermore, the adjustment units 12 b, 23 b, 24 b, and 25 b are controlled so that the ratio of the flow rates of the liquids flowing through the first pipe 12, pipe A, pipe B, and pipe C becomes the target ratio of 100:30:70:0.

[0103] 9, by moving a single processing liquid supplying apparatus 3, processing liquids having appropriate film removal capabilities are sequentially supplied to the inner portion R1, the middle portion R2, and the outer portion R3 of the substrate W. This eliminates the need for the substrate processing apparatus 100 to be provided with multiple processing liquid supplying apparatuses 3. Therefore, the substrate processing apparatus 100 of FIG. 9 has a simplified configuration with a reduced number of parts.

[0104] (b) In the substrate processing apparatus 100 according to the above embodiment, the three processing liquid supply apparatuses 3A, 3B, and 3C each have an independent configuration, but the present invention is not limited to this. Part of the configuration of the three processing liquid supply apparatuses 3A, 3B, and 3C may be shared among the three processing liquid supply apparatuses 3A, 3B, and 3C.

[0105] 10 is a diagram showing an example of the configuration of three processing liquid supply devices 3A, 3B, and 3C according to another embodiment. Differences between the configurations of the three processing liquid supply devices 3A, 3B, and 3C in FIG. 1 will be described below.

[0106] 10 , a branch portion BP is provided in the first pipe 12 at a portion between the agitation portion 12c and the second portion MP2. A valve 12d is also provided in the first pipe 12 between the branch portion BP and the second portion MP2. The upstream ends of two first pipes 12X and 12Y, which are drawn out to the outside of the processing liquid supply apparatus 3A and extend to the processing liquid supply apparatus 3B and the processing liquid supply apparatus 3C, respectively, are connected to the branch portion BP of the first pipe 12. Furthermore, in the processing liquid supply apparatus 3A of FIG. 10 , a second main pipe 22 is drawn out from the second liquid supply source 21 to the outside of the processing liquid supply apparatus 3A.

[0107] 10 , a nozzle 30 is connected to the downstream end of a first pipe 12X drawn from the processing liquid supply apparatus 3A. The first pipe 12X is provided with a valve 12d similar to the valve 12d of the processing liquid supply apparatus 3A. In the liquid flow path formed by the first pipe 12X and the nozzle 30, a portion located between the valve 12d and the nozzle 30 is referred to as a fourth portion MP4. Furthermore, a portion located at the nozzle 30 is referred to as a fifth portion MP5.

[0108] The portion of the second main pipe 22 extending from the processing liquid supply apparatus 3A is introduced into the processing liquid supply apparatus 3B and is further extended from the processing liquid supply apparatus 3B. As a result, a portion of the second main pipe 22 constitutes a part of the processing liquid supply apparatus 3B. Two branch portions are provided in the portion of the second main pipe 22 that constitutes a part of the processing liquid supply apparatus 3B. Two second sub-pipes 26, 27 are connected to connect the two branch portions of the second main pipe 22 to the fourth portion MP4 and the fifth portion MP5 of the liquid flow path, respectively. A valve 26a and an adjustment unit 26b are provided in the second sub-pipe 26, and a valve 27a and an adjustment unit 27b are provided in the second sub-pipe 27.

[0109] 10 , a nozzle 30 is connected to the downstream end of a first pipe 12Y drawn from the processing liquid supply apparatus 3A. The first pipe 12Y is provided with a valve 12d similar to the valve 12d of the processing liquid supply apparatus 3A. In the liquid flow path formed by the first pipe 12Y and the nozzle 30, a portion located between the valve 12d and the nozzle 30 is referred to as a sixth portion MP6. Furthermore, a portion located at the nozzle 30 is referred to as a seventh portion MP7.

[0110] The portion of the second main pipe 22 drawn out from the processing liquid supply apparatus 3B is led into the processing liquid supply apparatus 3C. The downstream end of the second main pipe 22 is located within the processing liquid supply apparatus 3C. As a result, the portion of the second main pipe 22 including the downstream end constitutes part of the processing liquid supply apparatus 3C. One branch is provided in the portion of the second main pipe 22 that constitutes part of the processing liquid supply apparatus 3C. Two second sub-pipes 28, 29 are connected to connect the one branch and the downstream end of the second main pipe 22 to the sixth portion MP6 and the seventh portion MP7 of the liquid flow path, respectively. A valve 28a and an adjustment unit 28b are provided in the second sub-pipe 28, and a valve 29a and an adjustment unit 29b are provided in the second sub-pipe 29.

[0111] In the three processing liquid supply devices 3A, 3B, and 3C in FIG. 10 having the above-described configuration, as shown in the dashed double-dashed line frame, a portion of the configuration of the processing liquid supply device 3A is used in common with the other processing liquid supply devices 3B and 3C as a common supply system 40.

[0112] As a result, sulfuric acid and hydrogen peroxide solution can be mixed in the agitation unit 12c by opening the valves 12a and 23a in the common supply system 40. Furthermore, by selectively switching the valves 12d of the three treatment liquid supply devices 3A, 3B, and 3C, the treatment liquid (a mixture of sulfuric acid and hydrogen peroxide solution) that has passed through the agitation unit 12c can be selectively supplied to the three nozzles 30.

[0113] Furthermore, by switching the open / close states of valves 24a, 25a, 26a, 27a, 28a, and 29a of three processing liquid supply devices 3A, 3B, and 3C, it is possible to start and stop the supply of hydrogen peroxide solution from second liquid supply source 21 to each liquid flow path. According to the configuration of Figure 10, some components of three processing liquid supply devices 3A, 3B, and 3C are used in common, thereby suppressing an increase in the number of parts of substrate processing apparatus 100 and simplifying the configuration.

[0114] (c) In the substrate processing apparatus 100 according to the above embodiment, the three processing liquid supply devices 3A, 3B, 3C may be moved in a horizontal plane so as to face three or more portions on the substrate W during the removal process.

[0115] For example, the three processing liquid supply devices 3A, 3B, and 3C may supply processing liquid from the three nozzles 30 to three portions on the substrate W, and then move horizontally so that the three nozzles 30 face three other portions on the substrate W. In this case, processing liquid can be further supplied to the three other portions on the substrate W. This makes it possible to supply processing liquids having appropriate film removal capabilities to more portions on the substrate W, respectively.

[0116] (d) Although the substrate processing apparatus 100 according to the above embodiment has three processing liquid supply devices 3A, 3B, and 3C, the present invention is not limited to this. The substrate processing apparatus 100 may have two processing liquid supply devices, or may have four or more processing liquid supply devices. In this case, the greater the number of processing liquid supply devices, the greater the portion of the substrate W that can be processed simultaneously, improving the processing efficiency of the substrate W. On the other hand, the fewer the number of processing liquid supply devices, the less the number of parts in the substrate processing apparatus 100 is increased, and the simpler the configuration is.

[0117] (e) In each of the processing liquid supply devices 3A, 3B, and 3C of the substrate processing apparatus 100 according to the above embodiment, the first liquid supply source 11 is a sulfuric acid supply source and the second liquid supply source 21 is a hydrogen peroxide solution supply source, but the present invention is not limited to this. In the above processing liquid supply devices 3A, 3B, and 3C, the first liquid supply source 11 may be a hydrogen peroxide solution supply source and the second liquid supply source 21 may be a sulfuric acid supply source.

[0118] (f) Although the second liquid supply system 20 of each of the processing liquid supply devices 3A, 3B, and 3C according to the above-described embodiments includes three second sub-pipes 23, 24, and 25 as piping for mixing sulfuric acid with hydrogen peroxide solution, the present invention is not limited to this. The second liquid supply system 20 may include only two second sub-pipes, or may include four or more second sub-pipes. When the second liquid supply system 20 includes four or more second sub-pipes, the sulfuric acid and hydrogen peroxide solution can be mixed in four or more portions of the liquid flow path formed by the first pipe 12 and the nozzle 30. This increases the degree of freedom in the operating conditions that can be set to generate the processing liquid.

[0119] (g) In the above embodiment, an example has been described in which sulfuric acid and hydrogen peroxide are mixed in two of the first portion MP1, the second portion MP2, and the third portion MP3 of the liquid flow path to generate a processing liquid in each of the processing liquid supply devices 3A, 3B, and 3C, but the present invention is not limited to this. The processing liquid may be generated by mixing sulfuric acid and hydrogen peroxide in all of the first portion MP1, the second portion MP2, and the third portion MP3 of the liquid flow path.

[0120] (h) In the film removal process according to the above embodiment, after a processing liquid containing Caro's acid is supplied to the substrate W, a rinsing process and a drying process are performed in this order, but the present invention is not limited to this. The substrate processing apparatus 100 may also include a supply device (SC1 supply device) that supplies a mixed liquid (SC1) of ammonia water and hydrogen peroxide water as another processing liquid to the substrate W held by the spin chuck 1. In this case, between the rinsing process and the drying process, the supply of SC1 to the substrate W by the SC1 supply device may be started and stopped, and an additional rinsing process may be performed to wash away any SC1 remaining on the substrate W.

[0121] <10> Correspondence between each part of the embodiment and each element of the claims The following describes an example of correspondence between each element of the claims and each element of the embodiment. Various other elements having the configuration or function described in the claims can also be used as each element of the claims.

[0122] In the above embodiment, the substrate processing apparatus 100 is an example of a substrate processing apparatus, the nozzle 30 is an example of a nozzle, the first pipe 12 is an example of a first pipe, the first liquid supply system 10 is an example of a first liquid supply system, the plurality of second sub-pipes 23, 24, 25 are examples of the plurality of second pipes, the second liquid supply system 20 is an example of a second liquid supply system, and the control unit 6 is an example of a control unit.

[0123] Furthermore, adjustment unit 12b is an example of a first flow rate adjustment unit, adjustment units 23b, 24b, and 25b are examples of a second flow rate adjustment unit, valves 23a, 24a, and 25a are examples of multiple on-off valves, and the three nozzles 30 of the three processing liquid supply devices (3A, 3B, and 3C) are examples of multiple nozzles.

[0124] Furthermore, the three first liquid supply systems 10 of the three processing liquid supply devices (3A, 3B, 3C) are examples of multiple first liquid supply systems, the three second liquid supply systems 20 of the three processing liquid supply devices (3A, 3B, 3C) are examples of multiple second liquid supply systems, the nozzle support unit 4 is an example of a nozzle support unit, the nozzle movement device 5 is an example of a nozzle movement unit, and the substrate part information is an example of information regarding the film removal capability of the processing liquid.

[0125] <11> Summary of Embodiments (Item 1) The substrate processing apparatus according to item 1 is a substrate processing apparatus that performs a removal process to remove an unnecessary film formed on one surface of a substrate using a processing liquid containing Caro's acid, wherein the Caro's acid is generated by mixing one of sulfuric acid and hydrogen peroxide solution as a first liquid and the other of sulfuric acid and hydrogen peroxide solution as a second liquid, and the substrate processing apparatus comprises: a nozzle that ejects the processing liquid so that the processing liquid impinges on a plurality of portions of the one surface of the substrate; a first liquid supply system that includes a first pipe connected to the nozzle and supplies the first liquid to the nozzle through the first pipe; a second liquid supply system that includes a plurality of second pipes that are respectively connected to a plurality of different portions of a liquid flow path formed by the nozzle and the first pipe and supplies the second liquid to the liquid flow path through any of the plurality of second pipes; and a control unit that controls the first liquid supply system and the second liquid supply system based on a plurality of predetermined operating conditions during the removal process, The plurality of operating conditions are conditions respectively associated with a plurality of portions of the surface of the substrate so that a processing liquid having a film removal capability corresponding to each portion impinges on each of the plurality of portions of the surface of the substrate.

[0126] In the substrate processing apparatus, a first liquid is supplied to a nozzle through a first pipe of a first liquid supply system. A second liquid is supplied into the first pipe through one of a plurality of second pipes of a second liquid supply system. In this case, the first liquid and the second liquid flowing through the first pipe are mixed in one of a plurality of portions of the first pipe. As a result, a processing liquid containing Caro's acid is generated in the first pipe and ejected from the nozzle.

[0127] The first liquid supply system and the second liquid supply system are controlled to operate according to a plurality of operating conditions during the removal process, whereby a treatment liquid having a film removal ability corresponding to each of a plurality of portions on one surface of the substrate is impinged on the respective portions. The degree of film removal ability of the treatment liquid indicates the reactivity of the treatment liquid with respect to the film on the substrate and is determined mainly by the concentration of Caro's acid contained in the treatment liquid.

[0128] On the other hand, the degree of ease with which an unnecessary film can be removed during removal processing (removability) may differ among multiple parts of one surface of a substrate depending on the material constituting the film, the thickness distribution of the film, the adhesion between the film and the substrate, etc. The distribution of removability on a substrate to be processed can be understood to some extent by previously subjecting a sample substrate to removal processing or by performing a simulation.

[0129] Once the distribution of removability is grasped, it is possible to predict the film removal ability of the processing liquid to be supplied to each of multiple portions of one surface of the substrate according to that distribution. For example, a processing liquid with high film removal ability is supplied to a portion of the substrate with low removability (where the film is difficult to remove). This reduces the processing time for that portion while suppressing the remaining of unnecessary film. On the other hand, a processing liquid with low film removal ability is supplied to a portion of the substrate with high removability (where the film is easy to remove). This prevents damage to the underlying portion of the film while removing the film.

[0130] According to the above configuration, the first liquid supply system and the second liquid supply system are controlled to comply with a plurality of operating conditions corresponding to a plurality of portions of one surface of the substrate. By appropriately setting the plurality of operating conditions, a processing liquid having an appropriate film removal ability for removing a film is respectively supplied to a plurality of portions of one surface of the substrate. Therefore, it is possible to prevent a portion of an unnecessary film from remaining on a portion of the one surface of the substrate or to prevent damage to a portion of the one surface of the substrate. Furthermore, it is no longer necessary to supply a large amount of processing liquid to a portion of the substrate that is less easily removable in order to remove a film formed thereon.

[0131] As a result, it is possible to remove an unnecessary film formed on one surface of the substrate without damaging the one surface of the substrate, and to reduce the amount of processing liquid used.

[0132] (Item 2) In the substrate processing apparatus according to item 1, the first liquid supply system includes a first flow rate adjustment unit that adjusts the flow rate of the first liquid flowing through the first pipe, the second liquid supply system includes a plurality of second flow rate adjustment units that respectively adjust the flow rate of the second liquid flowing through the plurality of second pipes, the plurality of operating conditions include a target ratio between the flow rate of the second liquid flowing through each second pipe associated with each of the plurality of portions of the one surface of the substrate and the flow rate of the first liquid flowing through the first pipe, and the control unit may control the first flow rate adjustment unit and the plurality of second flow rate adjustment units so that, for each portion of the substrate against which the processing liquid ejected from the nozzle will collide during the removal process, the ratio between the flow rate of the second liquid flowing through each second pipe and the flow rate of the first liquid flowing through the first pipe becomes the target ratio associated with that portion.

[0133] The degree of film removal ability of the processing liquid discharged from the nozzle onto the substrate is determined according to the ratio between the flow rate of the second liquid flowing through each second pipe and the flow rate of the first liquid flowing through the first pipe. Therefore, by appropriately setting a plurality of target ratios corresponding to a plurality of portions on one surface of the substrate, processing liquids having appropriate film removal ability for removing films are supplied to the plurality of portions on one surface of the substrate.

[0134] (Clause 3) In the substrate processing apparatus according to clause 1, the second liquid supply system may further include a plurality of on-off valves respectively provided in the plurality of second pipes, the plurality of operating conditions may include on-off states of the plurality of on-off valves corresponding to each of the plurality of portions of the surface of the substrate, and the control unit may control the plurality of on-off valves so that the on-off states of the plurality of on-off valves correspond to the portions of the substrate that will be hit by the processing liquid ejected from the nozzle during the removal process.

[0135] The degree of film removal ability of the processing liquid ejected from the nozzle onto the substrate is determined depending on which of the multiple second pipes the second liquid is supplied from to the first pipe. Therefore, by appropriately setting multiple open / close states corresponding to multiple parts of one surface of the substrate, processing liquid having appropriate film removal ability for removing films is supplied to each of the multiple parts of one surface of the substrate.

[0136] (4) In the substrate processing apparatus according to any one of paragraphs 1 to 3, the nozzle includes a plurality of nozzles respectively corresponding to the plurality of portions of the surface of the substrate, the first liquid supply system includes a plurality of first liquid supply systems respectively corresponding to the plurality of nozzles, and the second liquid supply system includes a plurality of second liquid supply systems respectively corresponding to the plurality of nozzles, and the substrate processing apparatus may further include a nozzle support part that supports the plurality of nozzles so that the processing liquid outlets of the plurality of nozzles face the plurality of portions of the surface of the substrate, respectively.

[0137] In this case, by simultaneously operating the multiple first liquid supply systems and the multiple second liquid supply systems, it is possible to simultaneously supply the processing liquid to multiple portions of the substrate from the multiple nozzles. This reduces the time required for the removal process compared to when the processing liquid is sequentially supplied to multiple portions on one surface of the substrate using a single nozzle. This prevents contamination of the substrate, such as the adhesion of particles, which would otherwise be caused by a longer processing time.

[0138] (Clause 5) In the substrate processing apparatus according to clauses 1 to 3, the substrate processing apparatus may further include a nozzle movement unit that supports the nozzle at a position above the substrate and moves the nozzle and the substrate relatively in a horizontal plane, and the control unit may control the nozzle movement unit during the removal process so that the processing liquid ejected from the nozzle sequentially collides with multiple portions of the one surface of the substrate.

[0139] In this case, there is no need to provide multiple nozzles for discharging the processing liquid onto multiple portions of the substrate, which prevents an increase in the number of parts of the substrate processing apparatus and simplifies the configuration.

[0140] (Item 6) A substrate processing method according to item 6 is a substrate processing method using a substrate processing apparatus that performs a removal process to remove an unnecessary film formed on one surface of a substrate using a processing liquid containing Caro's acid, wherein the Caro's acid is generated by mixing one of sulfuric acid and hydrogen peroxide solution as a first liquid and the other of sulfuric acid and hydrogen peroxide solution as a second liquid, and the substrate processing apparatus comprises: a nozzle that ejects the processing liquid so that it collides with a plurality of portions of the one surface of the substrate; a first liquid supply system that includes a first pipe connected to the nozzle and supplies the first liquid to the nozzle through the first pipe; and a second liquid supply system that includes a plurality of second pipes that are respectively connected to a plurality of mutually different portions of a liquid flow path formed by the nozzle and the first pipe and supplies the second liquid into the first pipe through any of the plurality of second pipes, and the substrate processing method comprises the steps of: acquiring, for each of the plurality of portions of the one surface of the substrate, information regarding the film removal capability of the processing liquid to be supplied to that portion; The method includes a step of setting operating conditions for the first liquid supply system and the second liquid supply system corresponding to each of the multiple portions of the substrate based on the acquired information so that processing liquids having film removal capabilities corresponding to each of the multiple portions of the surface of the substrate impinge on them; and a step of controlling the first liquid supply system and the second liquid supply system based on the set operating conditions for the first liquid supply system and the second liquid supply system.

[0141] The degree of ease with which an unnecessary film can be removed during removal processing (removability) may differ among multiple portions of one surface of a substrate depending on the material that constitutes the film, the thickness distribution of the film, the adhesion between the film and the substrate, etc. The distribution of removability on a substrate to be processed can be understood to some extent by previously subjecting a sample substrate to removal processing or by performing a simulation.

[0142] Once the distribution of removability is grasped, it is possible to predict the film removal ability of a treatment liquid to be supplied to each of multiple portions of one surface of a substrate according to that distribution. For example, a treatment liquid with high film removal ability is supplied to a portion of the substrate with low removability (where the film is difficult to remove). This reduces the processing time for that portion while suppressing the remaining of unnecessary film. On the other hand, a treatment liquid with low film removal ability is supplied to a portion of the substrate with high removability (where the film is easy to remove). This prevents damage to the underlying portion of the film while removing the film. The degree of film removal ability of a treatment liquid represents the reactivity of the treatment liquid with respect to the film on the substrate and is determined primarily by the concentration of Caro's acid contained in the treatment liquid.

[0143] In the substrate processing method, information regarding the film removal capability of a processing liquid to be supplied to each of a plurality of portions on one surface of the substrate is acquired. Operating conditions for a first liquid supply system and a second liquid supply system are set based on the acquired information regarding the film removal capability of the processing liquid. The first liquid supply system and the second liquid supply system are controlled to comply with a plurality of operating conditions corresponding to the plurality of portions on the one surface of the substrate.

[0144] When the first liquid supply system and the second liquid supply system are controlled, the first liquid is supplied to the nozzle through the first pipe of the first liquid supply system. Furthermore, the second liquid is supplied into the first pipe through one of the second pipes of the second liquid supply system. In this case, the first liquid and the second liquid flowing through the first pipe are mixed in one of the multiple portions of the first pipe. A processing liquid containing Caro's acid is generated in the first pipe and ejected from the nozzle. As a result, the processing liquid having the film removal ability corresponding to each of the multiple portions on one surface of the substrate impinges on the corresponding portion.

[0145] By appropriately setting a plurality of operating conditions, a processing liquid having an appropriate film removal ability for removing a film is respectively supplied to a plurality of portions of one surface of the substrate. Therefore, it is possible to suppress the remaining of an unnecessary film on a portion of the one surface of the substrate or the occurrence of damage to a portion of the one surface of the substrate. Furthermore, it is no longer necessary to supply a large amount of processing liquid to a portion of the substrate that is less easily removable in order to remove a film formed on that portion.

[0146] As a result, it is possible to remove an unnecessary film formed on one surface of the substrate without damaging the one surface of the substrate, and to reduce the amount of processing liquid used.

[0147] (Clause 7) In the substrate processing method according to Clause 6, the plurality of operating conditions may include a target ratio between a flow rate of the second liquid flowing through each second pipe associated with each of the plurality of portions of the one surface of the substrate and a flow rate of the first liquid flowing through the first pipe, and the step of controlling the first liquid supply system and the second liquid supply system may include adjusting the flow rate of the first liquid flowing through the first pipe, and adjusting the flow rate of the second liquid flowing through each of the plurality of second pipes, for each portion of the substrate with which the processing liquid ejected from the nozzle will collide during the removal process, so that the ratio between the flow rate of the second liquid flowing through each second pipe and the flow rate of the first liquid flowing through the first pipe becomes the target ratio associated with that portion.

[0148] The degree of film removal ability of the processing liquid discharged from the nozzle onto the substrate is determined according to the ratio between the flow rate of the second liquid flowing through each second pipe and the flow rate of the first liquid flowing through the first pipe. Therefore, by appropriately setting a plurality of target ratios corresponding to a plurality of portions on one surface of the substrate, processing liquids having appropriate film removal ability for removing films are supplied to the plurality of portions on one surface of the substrate.

[0149] (Item 8) In the substrate processing method according to Item 6, the second liquid supply system may further include a plurality of on-off valves respectively provided in the plurality of second pipes, the plurality of operating conditions may include on-off states of the plurality of on-off valves corresponding to each of the plurality of portions of the surface of the substrate, and the step of controlling the first liquid supply system and the second liquid supply system may include controlling the plurality of on-off valves so that the on-off states of the plurality of on-off valves correspond to the portions of the substrate that will be hit by the processing liquid ejected from the nozzle during the removal process.

[0150] The degree of film removal ability of the processing liquid ejected from the nozzle onto the substrate is determined depending on which of the multiple second pipes the second liquid is supplied from to the first pipe. Therefore, by appropriately setting multiple open / close states corresponding to multiple parts of one surface of the substrate, processing liquid having appropriate film removal ability for removing films is supplied to each of the multiple parts of one surface of the substrate.

[0151] (Item 9) In the substrate processing method according to items 6 to 8, the nozzle includes a plurality of nozzles respectively corresponding to the plurality of portions of the one surface of the substrate, the first liquid supply system includes a plurality of first liquid supply systems respectively corresponding to the plurality of nozzles, and the second liquid supply system includes a plurality of second liquid supply systems respectively corresponding to the plurality of nozzles, and the substrate processing method may include supporting the plurality of nozzles so that processing liquid outlets of the plurality of nozzles face the plurality of portions of the one surface of the substrate during the removal process.

[0152] In this case, by simultaneously operating the multiple first liquid supply systems and the multiple second liquid supply systems, it is possible to simultaneously supply the processing liquid to multiple portions of the substrate from the multiple nozzles. This reduces the time required for the removal process compared to when the processing liquid is sequentially supplied to multiple portions on one surface of the substrate using a single nozzle. This prevents contamination of the substrate, such as the adhesion of particles, which would otherwise be caused by a longer processing time.

[0153] (Item 10) In the substrate processing method according to items 6 to 8, the substrate processing method may further include a step of supporting the nozzle at a position above the substrate and moving the nozzle and the substrate relatively in a horizontal plane so that the processing liquid ejected from the nozzle sequentially collides with multiple portions of the one surface of the substrate during the removal process.

[0154] In this case, there is no need to provide multiple nozzles for discharging the processing liquid onto multiple portions of the substrate, which prevents an increase in the number of parts of the substrate processing apparatus and simplifies the configuration.

Claims

1. A substrate processing apparatus that performs a removal process for removing an unnecessary film formed on one surface of a substrate with a processing liquid containing a peracid, wherein the peracid is generated by mixing one of sulfuric acid and hydrogen peroxide solution as a first liquid and the other of sulfuric acid and hydrogen peroxide solution as a second liquid, and the substrate processing apparatus includes: a nozzle that discharges the processing liquid so as to collide with a plurality of portions of the one surface of the substrate; a first liquid supply system including a first pipe connected to the nozzle and supplying the first liquid to the nozzle through the first pipe; a second liquid supply system including a plurality of second pipes respectively connected to different portions of a liquid flow path formed by the nozzle and the first pipe and supplying the second liquid to the liquid flow path through any one of the plurality of second pipes; and a control unit that controls the first liquid supply system and the second liquid supply system based on a plurality of predetermined operating conditions during the removal process, and the plurality of operating conditions are conditions respectively associated with a plurality of portions of the substrate such that a processing liquid having a film removal ability corresponding to each portion collides with each of the plurality of portions of the one surface of the substrate.

2. The first liquid supply system includes a first flow rate adjustment unit that adjusts a flow rate of the first liquid flowing through the first pipe, the second liquid supply system includes a plurality of second flow rate adjustment units that respectively adjust flow rates of the second liquid flowing through the plurality of second pipes, the plurality of operating conditions include a target ratio between the flow rate of the second liquid flowing through each second pipe associated with each of the plurality of portions of the one surface of the substrate and the flow rate of the first liquid flowing through the first pipe, and the control unit controls the first flow rate adjustment unit and the plurality of second flow rate adjustment units such that, for each portion of the substrate where the processing liquid discharged from the nozzle is to collide during the removal process, the ratio between the flow rate of the second liquid flowing through each second pipe and the flow rate of the first liquid flowing through the first pipe becomes the target ratio associated with the portion. The substrate processing apparatus according to claim 1.

3. The second liquid supply system further includes a plurality of on-off valves respectively provided in the plurality of second pipes. The plurality of operating conditions include the open / closed states of the plurality of on-off valves associated with each of the plurality of portions of the one surface of the substrate. During the removal process, the control unit controls the plurality of on-off valves such that the open / closed states of the plurality of on-off valves become the open / closed states corresponding to each portion of the substrate where the processing liquid discharged from the nozzles will collide. The substrate processing apparatus according to claim 1.

4. The nozzle includes a plurality of nozzles respectively corresponding to the plurality of portions of the one surface of the substrate. The first liquid supply system includes a plurality of first liquid supply systems respectively corresponding to the plurality of nozzles. The second liquid supply system includes a plurality of second liquid supply systems respectively corresponding to the plurality of nozzles. The substrate processing apparatus further includes a nozzle support unit that supports the plurality of nozzles such that the discharge ports of the processing liquid of the plurality of nozzles face the plurality of portions of the one surface of the substrate respectively. The substrate processing apparatus according to any one of claims 1 to 3.

5. The substrate processing apparatus further includes a nozzle moving unit that supports the nozzle at a position above the substrate and relatively moves the nozzle and the substrate in a horizontal plane. During the removal process, the control unit controls the nozzle moving unit such that the processing liquid discharged from the nozzle sequentially collides with the plurality of portions of the one surface of the substrate. The substrate processing apparatus according to any one of claims 1 to 3.

6. A substrate processing method using a substrate processing apparatus for performing a removal process of removing an unnecessary film formed on one surface of a substrate with a processing liquid containing a peracid, wherein the peracid is generated by mixing one of sulfuric acid and hydrogen peroxide water as a first liquid and the other of sulfuric acid and hydrogen peroxide water as a second liquid, the substrate processing apparatus includes: a nozzle that discharges the processing liquid so as to collide with a plurality of portions of the one surface of the substrate; a first liquid supply system including a first pipe connected to the nozzle, and supplying the first liquid to the nozzle through the first pipe; and a second liquid supply system including a plurality of second pipes respectively connected to different portions of a liquid flow path formed by the nozzle and the first pipe, and supplying the second liquid into the first pipe through any one of the plurality of second pipes, the substrate processing method includes: a step of obtaining information regarding the film removal ability of the processing liquid to be supplied to each of the plurality of portions of the one surface of the substrate; a step of setting operating conditions of the first liquid supply system and the second liquid supply system corresponding to each of the plurality of portions of the substrate so that the processing liquid having a film removal ability corresponding to each of the plurality of portions of the one surface of the substrate collides therewith, based on the obtained information; and a step of controlling the first liquid supply system and the second liquid supply system based on the set operating conditions of the first liquid supply system and the second liquid supply system.

7. The plurality of operating conditions include a target ratio between the flow rate of the second liquid flowing through each second pipe associated with each of the plurality of portions of the one surface of the substrate and the flow rate of the first liquid flowing through the first pipe, and the step of controlling the first liquid supply system and the second liquid supply system includes, during the removal process, adjusting the flow rate of the first liquid flowing through the first pipe and adjusting the flow rate of the second liquid flowing through each of the plurality of second pipes such that the ratio between the flow rate of the second liquid flowing through each second pipe and the flow rate of the first liquid flowing through the first pipe becomes the target ratio associated with each portion, for each portion of the substrate where the processing liquid discharged from the nozzle is to collide.

8. The second liquid supply system further includes a plurality of on-off valves respectively provided in the plurality of second pipes. The plurality of operating conditions include the open / closed states of the plurality of on-off valves associated with each of the plurality of portions of the one surface of the substrate. The step of controlling the first liquid supply system and the second liquid supply system includes controlling the plurality of on-off valves such that the open / closed states of the plurality of on-off valves become the open / closed states corresponding to each portion of the substrate where the processing liquid discharged from the nozzle will collide during the removal process. The substrate processing method according to claim 6.

9. The nozzle includes a plurality of nozzles respectively corresponding to the plurality of portions of the one surface of the substrate. The first liquid supply system includes a plurality of first liquid supply systems respectively corresponding to the plurality of nozzles. The second liquid supply system includes a plurality of second liquid supply systems respectively corresponding to the plurality of nozzles. The substrate processing method includes supporting the plurality of nozzles such that the discharge ports of the processing liquid of the plurality of nozzles face the plurality of portions of the one surface of the substrate respectively during the removal process. The substrate processing method according to any one of claims 6 to 8.

10. The substrate processing method according to any one of claims 6 to 8 further includes, during the removal process, supporting the nozzle at a position above the substrate such that the processing liquid discharged from the nozzle sequentially collides with a plurality of portions of the one surface of the substrate, and relatively moving the nozzle and the substrate in a horizontal plane.

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