RGB laser tunable light source with high cri

Abstract

The invention provides a light generating system (1000) comprising a multi-chip laser package (2000), a luminescent material (200 ), and optics (500), wherein: (A) the multi-chip laser package (2000) comprises (i) a first series (51) of first solid state laser devices (110), configured to generate first laser light (111 ) having a first peak wavelength (λp1), (ii) a second series (52) of second solid state laser devices (120) configured to generate second laser light (121 ) having a second peak wavelength (λp2), and (iii) a third series (53) of third solid state laser devices (130) configured to generate third laser light (131 ) having a third peak wavelength (λp3); wherein the multi-chip laser package (2000) further comprises a support (2300) configured to support the solid state laser devices (110, 120, 130,...); (B) the first peak wavelength (λp1) and the second peak wavelength (λp2) are independently selected from the wavelength range of 440-490 nm, and the third peak wavelength (λp3) is selected from the range of 590-780 nm; (C) the luminescent material (200) is configured in a transmissive mode downstream of the first solid state laser devices (110) and is configured to convert at least part of the first laser light (111) into luminescent material light (201 ) having one or more wavelengths in the wavelength range of 490-590 nm and having a centroid wavelength (λcL); wherein λcL ≥ λp1+15 nm, λcL ≥ λp2+15 nm, and λcL ≤ λp3 - 15 nm; (D) the luminescent material (200) and, the second solid state laser devices (120), and the third solid state laser devices (130) are configured such that during operation of the second solid state laser devices (120) and the third solid state laser devices (130) the second laser light (121) and the third laser light (131) bypasses the luminescent material (200); (E) the light generating system (1000) is configured to provide in a first operational mode of the light generating system (1001) white system light (1001) comprising the luminescent material light (201), the second laser light (121), and the third laser light (131); and (F) the optics (500) are configured to one or more of (a) mix different light contributions to the system light (1001), and (b) beam shape the system light (1001).

Description

[0001]2023PF80184 1 RGB LASER TUNABLE LIGHT SOURCE WITH HIGH CRI FIELD OF THE INVENTION The invention relates to a light generating system. The invention further relates to a lighting device comprising the light generating system. BACKGROUND OF THE INVENTION White light sources using a laser diode and a phosphor are known in the art. US2018 / 0316160, for instance, describes a device and a method for an integrated white colored electromagnetic radiation source using a combination of laser diode excitation sources based on gallium and nitrogen containing materials and light emitting source based on phosphor materials. A violet, blue, or other wavelength laser diode source based on gallium and nitrogen materials may be closely integrated with phosphor materials, such as yellow phosphors, to form a compact, high-brightness, and highly efficient, white light source. The phosphor material is provided with a plurality of scattering centers scribed on an excitation surface or inside bulk of a plate to scatter electromagnetic radiation of a laser beam from the excitation source incident on the excitation surface to enhance generation and quality of an emitted light from the phosphor material for outputting a white light emission either in reflection mode or transmission mode. WO2023 / 126202A1 discloses a light generating system comprising a first laser having a peak wavelength selected from the wavelength range of 445-475 nm, a second laser having a peak wavelength selected from the wavelength range of 420-450 nm or from the wavelength range of 470-490 nm, a third laser having a peak wavelength selected from the wavelength range of 600-650 nm and a luminescent material excitable by light from the first and second laser and for generating light in the green-orange wavelength range. The light generating system provides white system light. WO2022 / 233618A1 discloses a light generating system comprising a plurality of light sources, a first luminescent material and a second luminescent material. The plurality of light sources comprises a first laser that generates blue light and a second laser that generated yellow / orange light. The first luminescent material is excited by the first laser and generates light in the green and / or yellow wavelength range. The second luminescent 2023PF80184 2 material is excited by the second laser and generates light in the orange and / or red wavelength range. The light generating system generates light comprising the first luminescent material light and the second luminescent material light. SUMMARY OF THE INVENTION High brightness light sources can be used in various applications including spots, projection, stage-lighting, headlamps, home and office lighting, entertainment lighting, and automotive lighting. For this purpose, laser-phosphor technology can be used, wherein a laser provides laser light and a remote phosphor converts laser light into converted light. A relatively straightforward way to produce white light using lasers is to use (blue) laser light in combination with a (yellow) phosphor to generate phosphor converted light. Laser-phosphor systems may allow generation of high brightness light and may therefore be used inprojection systems, including displays such as cinema projectors and projectors for home,school, and office applications, car front lighting, search lighting, stage lighting, architectural lighting, and special lighting applications. Alternatively, direct emission from red, green and blue lasers may be used (e.g. in high-end projectors), allowing for a wide color gamut. While for display applications this is sufficient, in general lighting applications the use of just three primary emission lines (from lasers) may result in poor light quality (typically very low or even negative CRI numbers) and relatively low luminous flux. In other words, with light sources providing the 3 primary colors the color rendering quality of a light generating system is insufficient (negative CRI), while the light generating system also provides insufficient luminous flux. Hence, currently available RGB light sources cannot be used for e.g., indoor spot applications, which require a CRI of at least of 80. Multi-chip laser packages (MCP) may be available, which can either emit light in a single spectral range or in multiple spectral regions. A multi-chip laser package (MCP) (or “multi-die laser package (MDP)) may be an integrated package comprising an array ofdensely packed laser diodes. An emitter pitch of such MCPs may be in the range of 2 – 6mm, but may also be smaller, like down to about 1.25 mm. Such dense packaging may facilitate a relatively compact source of light. MCPs may also comprise integrated lens arrays, aligned with the laser emitters, to collimate light emitted by individual laser chips into relatively parallel beams of light. RGB (multi-chip laser) packages can be used not only in projectors, but also to make white light. However, in RGB packages the balance of the laser diode numbers of different colors is not optimal, i.e., not all the diodes in the existing 2023PF80184 3 package architectures will be used efficiently. Additionally, with the use of existing RGB package architectures the problem of color rendering (light quality) remains. Hence, it is an aspect of the invention to provide an alternative light generating system, which preferably further at least partly obviates one or more of above-described drawbacks. The present invention may have as object to overcome or ameliorate at least one of the disadvantages of the prior art, or to provide a useful alternative. According to a first aspect, the invention provides a light generating system comprising a multi-chip laser package, a luminescent material, and optics. Especially, in embodiments, the multi-chip laser package may comprise a first series of first solid state laser devices. The first series of first solid state laser devices may, in embodiments, be configured to generate first laser light having a first peak wavelength (λp1). Additionally or alternatively, in embodiments, the multi-chip laser package may comprise a second series of second solid state laser devices. The second series of second solid state laser devices may, in embodiments, be configured to generate second laser light having a second peak wavelength (λp2). Additionally or alternatively, in embodiments, the multi-chip laser package may comprise a third series of third solid state laser devices. The third series of third solid state laser devices may, in embodiments, be configured to generate third laser light having a third peak wavelength (λp3). Moreover, in embodiments, the multi-chip laser package may further comprise a support configured to support the solid state laser devices. Further, in embodiments, the first peak wavelength (λp1) and the second peak wavelength (λp2) may be independently selected from the wavelength range of 440-490 nm. Conversely, in embodiments, the third peak wavelength (λp3) may be selected from the range of 590-780 nm. Yet further, in embodiments, the luminescent material may be configured in a transmissive mode downstream of the first solid state laser devices. Especially, in embodiments, the luminescent material may be configured to convert at least part of the first laser light into luminescent material light. In embodiments, the luminescent material may especially be configured to convert at least part of the first laser light into luminescent material light having one or more wavelengths in the wavelength range of 490-590 nm and having a centroid wavelength (λcL). Especially, in embodiments, λcL≥ λp1+15 nm. Additionally or alternatively, in embodiments, λcL ≥ λp2+15 nm. Additionally or alternatively,in embodiments, λcL ≤ λp3 - 15 nm. Furthermore, in embodiments, the luminescent materialand the second solid state laser devices may be configured such that during operation of the second solid state laser devices the second laser light may bypass the luminescent material. Further, in embodiments, the light generating system may be configured to provide in a first 2023PF80184 4 operational mode of the light generating system white system light. Especially, in such embodiments, the white system light may comprise the luminescent material light, the second laser light, and the third laser light. Furthermore, in embodiments, the optics may be configured to one or more of (a) mix different light contributions to the system light, and (b) beam shape the system light. Hence, in embodiments, the invention may provide a light generating system comprising a multi-chip laser package, a luminescent material, and optics, wherein: (A) the multi-chip laser package comprises (i) a first series of first solid state laser devices, configured to generate first laser light having a first peak wavelength (λp1), (ii) a second series of second solid state laser devices configured to generate second laser light having a second peak wavelength (λp2), and (iii) a third series of third solid state laser devices configured to generate third laser light having a third peak wavelength (λp3); wherein the multi-chip laser package further comprises a support configured to support the solid state laser devices; (B) the first peak wavelength (λp1) and the second peak wavelength (λp2) are independently selected from the wavelength range of 440-490 nm, and the third peak wavelength (λp3) is selected from the range of 590-780 nm; (C) the luminescent material is configured in a transmissive mode downstream of the first solid state laser devices and is configured to convert at least part of the first laser light into luminescent material lighthaving one or more wavelengths in the wavelength range of 490-590 nm and having acentroid wavelength (λcL); wherein λcL ≥ λp1+15 nm, λcL ≥ λp2+15 nm, and λcL ≤ λp3 - 15 nm;(D) the luminescent material, the second solid state laser devices, and the third solid state laser devices are configured such that during operation of the second solid state laser devices and the third solid state laser devices the second laser light and the third laser light bypasses the luminescent material; (E) the light generating system is configured to provide in a first operational mode of the light generating system white system light comprising the luminescent material light, the second laser light, and the third laser light; and (F) the optics are configured to one or more of (a) mix different light contributions to the system light, and (b) beam shape the system light. With such a light generating system an architecture of laser diodes may be achieved that may allowing significant improvement in CRI (to CRI values of at least 70 or 80) of the integrated 3-color multi-chip laser package laser light sources . Additionally, the light generating system applying the architecture as described above may provide efficient use of all of the laser diodes, which results in a compact color-tunable high brightness sourcewith good color rendering over a broad CCT range. Due to the usage of lasers the accessiblecolor gamut area in the white light spectrum may be relatively broad. Such a good color 2023PF80184 5 rendering light generating system may be especially useful for high brightness applications, such as e.g. entertainment and stage lighting, laser projection, spot lighting and special lighting applications. In embodiments, the light generating system (or “system”) may thus comprise a multi-chip laser package, a luminescent material, and optics. Here below, embodiments of the different elements of the light generating system will be described in further detail. The multi-chip laser package may, in embodiments, comprise a plurality of light generating devices. Embodiments of suitable light generating devices are described in more detail below. Especially, in embodiments, the multi-chip laser package may comprise a plurality of (solid state) lasers. More especially, in embodiments, the multi-chip laser package may comprise a plurality of semiconductor laser diodes. The plurality of (solid state or semiconductor) laser diodes may, in embodiments, be configured in an n*m array, see also further below. More especially, in embodiments, the multi-chip laser package may comprise a first series of first solid state laser devices. The first series of first solid state laser devices may, in embodiments, comprise n1 first solid state laser devices. Especially, in embodiments, n1 may be at least 1, especially at least 2, such as at least 3, like at least 4, especially at least 5, such as at least 6. Further, in embodiments, n1 may be at most 20, like at most 15, such asat most 10, especially at most 8. Too high numbers of solid state laser devices in a series mayresult in a higher complexity of the multi-chip laser package, which may be undesired. On the other hand too low numbers of solid state laser devices in a series may result in relatively low achievable luminous fluxes, which may be undesired. The first solid state laser devices may, in embodiments, be configured to generate first laser light having a first peak wavelength (λp1). In embodiments, the first solid state laser devices may be configured to provide light having a wavelength in the blue wavelength range. Especially, in embodiments, the first peak wavelength (λp1) may be selected from the range of 440-490 nm, such as from the range of 450-480 nm, like from the range of 455-470 nm. Hence, in embodiments, the first laser light may be blue light. Additionally, in embodiments, the multi-chip laser package may comprise a second series of second solid state laser devices. The second series of second solid state laser devices may, in embodiments, comprise n2 second solid state laser devices. Especially, in embodiments, n2 may be at least 1, especially at least 2, such as at least 3, like at least 4, especially at least 5, such as at least 6. Further, in embodiments, n2 may be at most 20, like at most 15, such as at most 10, especially at most 8. In embodiments, the first series and the second series may comprise essentially the same amount of solid state laser devices, i.e., 2023PF80184 6 n1=n2. However, in other embodiments, the amount of solid state laser devices in the first series may be different from the amount of solid state laser devices in the second series. Especially, in embodiments, 0.25 ≤ n1 / n2 ≤ 4, such as 0.5 ≤ n1 / n2 ≤ 2. More especially, in embodiments, 1 ≤ n1 / n2 ≤ 7, such as 1.1 ≤ n1 / n2 ≤ 4, like 1.5 ≤ n1 / n2 ≤ 2.5. It may be desirable to have a higher amount of first solid state laser devices relative to second solid state laser devices as the first devices may be used to provide (phosphor-converted) green light. Green laser power, while achieving relatively high CCTs, is a limiting factor on the maximum light output of RGB light systems. Therefore, using more blue light source for providing phosphor-converted green light, the light output may be improved and the laser devices may be more efficiently used. The second solid state laser devices may, in embodiments, be configured to generate second laser light having a second peak wavelength (λp2). In embodiments, the second solid state laser devices may be configured to provide light having a wavelength in the blue wavelength range. Especially, in embodiments, the second peak wavelength (λp2) may be selected from the range of 440-490 nm, such as from the range of 450-480 nm, like from the range of 455-470 nm. Hence, in embodiments, the first laser light may be blue light. The second peak wavelength (λp2) may especially be selected independently from the first peak wavelength (λp1), and vice versa. Hence, in some embodiments, the first peak wavelength (λp1) and the second peak wavelength (λp2) may be different, e.g., the first solid state laser devices and the second solid state laser devices may be different light sources and thus the first laser light and the second laser light may be different types of (blue) light. For example, in embodiments, |λp1-λp2| ≥ 5 nm, such as |λp1-λp2| ≥ 10 nm, especially |λp1-λp2| ≥ 15 nm. For example, in embodiments, the first peak wavelength (λp1) may be 445 nm and the second peak wavelength (λp2) may be 465 nm. The phrases “different light sources” or “a plurality of different light sources”, and similar phrases, may in embodiments refer to a plurality of solid-state light sources selected from at least two different bins. In other embodiments, the first peak wavelength (λp1) and the second peak wavelength (λp2) may be essentially the same, i.e., λp1=λp2. In specific embodiments, the first peak wavelength (λp1) and the second peak wavelength (λp2) may be selected relatively close to each other, e.g. the first solid state laser devices and the second solid state laser devices may be the same light sources and therefore the first laser light and the second laser light may be essentially the same type of (blue) light. In specific embodiments, |λp1-λp2| ≤ 25 nm, such as |λp1-λp2| ≤ 20 nm, like |λp1-λp2| ≤ 15 nm, especially |λp1-λp2| ≤ 10 nm, more especially |λp1-λp2| ≤ 5 nm. For example, in embodiments, the first peak wavelength (λp1) and the second peak 2023PF80184 7 wavelength (λp2) may both be 450 nm. Hence, in embodiments, the first solid state laser devices and the second solid state laser devices may be identical light sources. The phrases“identical light sources” or “a plurality of same light sources”, and similar phrases, may inembodiments refer to a plurality of solid-state light sources selected from the same bin. Additionally, in embodiments, the multi-chip laser package may comprise a third series of third solid state laser devices. The third series of third solid state laser devices may, in embodiments, comprise n3 third solid state laser devices. Especially, inembodiments, n3 may be at least 1, especially at least 2, such as at least 3, like at least 4,especially at least 5, such as at least 6. Further, in embodiments, n3 may be at most 20, like at most 15, such as at most 10, especially at most 8. The third solid state laser devices may, in embodiments, be configured to generate third laser light having a third peak wavelength (λp3). In embodiments, the third solid state laser devices may be configured to provide light having a wavelength in the yellow-red, especially the red, wavelength range. Especially, in embodiments, the third peak wavelength (λp3) may be selected from the range of 590-780 nm, such as from the range of 600-780 nm, like from the range of 620-780 nm. Hence, in embodiments, the third laser light may be red light. Further, in embodiments, the multi-chip laser package may comprise a support. The support may, in embodiments, be configured to support one or more of the (first, second, third, and optionally further, see also further below) solid state laser devices. Especially, in embodiments, the support may be configured to support essentially all of the (plurality of) solid state laser devices. More especially, in embodiments, the solid state laser devices may be integrated in the multi-chip laser package. It may be desired to provide thermal management in the multi-chip laser package. Therefore, in embodiments, the solid state laser devices may be configured in thermal contact and integrated with a support with heat spreading (or heat sinking) capacity. An element may be considered in “thermal contact” with another element if it can exchange energy through the process of heat. Hence, the elements may be thermally coupled. In embodiments, thermal contact can be achieved by physical contact. In embodiments, thermal contact may be achieved via a thermally conductive material, such as a thermally conductive glue (or thermally conductive adhesive). Thermal contact may also be achieved between two elements when the two elements are arranged relative to each other at a distance of equal to or less than about 10 µm, though larger distances, such as up to 100 µm may be possible. The shorter the distance, the better the thermal contact. Especially, the distance is 10 µm or less, such as 5 µm or less, such as 1 µm or less. The distance may be the distance between two respective surfaces of the 2023PF80184 8 respective elements. The distance may be an average distance. When the two elements are configured at a distance from each other, an intermediate material may be configured in between, though in other embodiments, the distance between the two elements may filled with a gas, liquid, or may be vacuum. When an intermediate material is available, the larger the distance, the higher the thermal conductivity may be useful for thermal contact between the two elements. However, the smaller the distance, the lower the thermal conductivity of the intermediate material may be (of course, higher thermal conductive materials may also beused). Especially, in embodiments, the support may comprise a thermally conductiveelement, such as one or more of a heat spreading base plate, a heat spreader, and a heat sink.A thermally conductive element may especially comprise thermally conductive material. Athermally conductive material may especially have a thermal conductivity of at least about 20 W / (m*K), like at least about 30 W / (m*K), such as at least about 100 W / (m*K), like especially at least about 200 W / (m*K). In yet further specific embodiments, a thermally conductive material may especially have a thermal conductivity of at least about 10 W / (m*K). In embodiments, the thermally conductive material may comprise one or more of copper, aluminum, silver, gold, silicon carbide, aluminum nitride, boron nitride, aluminum silicon carbide, beryllium oxide, a silicon carbide composite, aluminum silicon carbide, a copper tungsten alloy, a copper molybdenum carbide, carbon, diamond, and graphite. Alternatively, or additionally, the thermally conductive material may comprise or consist of aluminum oxide. In embodiments, the thermally conductive element may comprise one or more of a heatsink, a heat spreader, and a two-phase cooling device. In yet other embodiments, the thermally conductive element may be configured in thermal contact with one or more of a heatsink, a heat spreader, and a two-phase cooling device, and may e.g. transfer heat to such heatsink, heat spreader, or two-phase cooling device, via another thermally conductive element. In further embodiments, the support may (also) comprise a chip or a printed- circuit board (PCB). In some embodiments, the support may be rigid. However, in other embodiments, the support may also be a flexible support, i.e., comprising a flexible material such as for example a polymeric material (e.g. polyimide or PET). As indicated above, the light generating system may also comprise a luminescent material. Suitable luminescent materials and their characteristics are described in further detail below. The luminescent material may especially, in embodiments, be configured in a transmissive mode. In the transmissive mode, it may be relatively easy to have light source light admixed in the luminescent material light, which may be useful for 2023PF80184 9 generating the desirable spectral power distribution. Conversely, in the reflective mode, thermal management may be easier, as a substantial part of the luminescent material may be in thermal contact with a thermally conductive element, like a heatsink or heat spreader. Further, the reflective mode may result in a relatively eye-safe system, even in case one or more elements falter. For operation of the luminescent material in the transmissive mode, achieving similar eye-safety may require use of light sensors and mixing optics to reduce native brightness of the laser devices. Hence, in some embodiments, the luminescent material may be configured in the reflective mode. Here especially, the luminescent material may, in embodiments, be configured in the transmissive mode and downstream of the first solid state laser devices. The terms “upstream” and “downstream” relate to an arrangement of items or features relative to the propagation of the light from a light generating means (here the especially the solid state laser devices), wherein relative to a first position within a beam of light from the light generating means, a second position in the beam of light closer to the light generating means is “upstream”, and a third position within the beam of light further away from the light generating means is “downstream”. The luminescent material may, in embodiments, be configured as a layer over at least part of (especially covering) the first series of first solid state laser devices. In somesuch embodiments, the luminescent material may be configured in direct physical contactwith (at least part of) the first series of first solid state laser devices. However, in other embodiments, the luminescent material may especially be configured (as a luminescent body) remote from the first series of first solid state laser devices. Especially, in embodiments, the luminescent material may be configured at a first distance (d1) from the first series of first solid state laser devices, see also further below. Especially, in embodiments, d1>0. Additionally or alternatively, in embodiments, the luminescent material may be configured as a layer over at least part of (especially covering) the second series of second solid state laser devices. Furthermore, in embodiments, the luminescent material may be configured as a layer over at least part of (especially covering) one or more of the first series, the second series, the third series, and optional further series of solid state laser devices. In specific embodiments, see also further below, the luminescent material may be configured as a layer over (especially covering) essentially all of the solid state laser devices. In embodiments, the luminescent material may be comprised by a luminescent body. The luminescent body may be a layer, like a self-supporting layer. The luminescent body may also be a coating. The luminescent body may also comprise a luminescent coating on a support (especially a light transmissive support in the transmissive mode). Especially, 2023PF80184 10 the luminescent body may essentially be self-supporting. In embodiments, the luminescent material may be provided as luminescent body, such as a luminescent single crystal, a luminescent glass, or a luminescent ceramic body. Such body may be indicated as “converter body” or “luminescent body”. In embodiments, the luminescent body may be a luminescent single crystal or a luminescent ceramic body. For instance, in embodiments a cerium comprising garnet luminescent material may be provided as a luminescent single crystal or as a luminescent ceramic body. In other embodiments, the luminescent body may comprise a light transmissive body, wherein the luminescent material is embedded. For instance, the luminescent body may comprise a glass body, with luminescent material embedded therein.Or, the glass as such may be luminescent. In other embodiments, the luminescent body maycomprise a polymeric body, with luminescent material embedded therein. In specific embodiments, the luminescent body comprises a ceramic body comprising the luminescent material. Ceramic bodies are known in the art. Alternatively, the luminescent body comprises single crystal. In yet further specific embodiments, different types of luminescent bodies may be applied. Hence, the body may especially be selected from single crystalline bodies and ceramic bodies. The latter may be more easily made than the former, while they nevertheless may have good optical and / or thermal properties. Hence, in embodiments the body may be aceramic body. However, in specific embodiments also a combination of single crystallinebodies and ceramic bodies may be applied. Especially, the luminescent body comprises aceramic luminescent body. In embodiments, the luminescent body (or “body”) may havelateral dimensions width or length (W or L) or diameter (D) and a thickness or height (H). In embodiments, (i) D≥H or (ii) and W≥H and / or L≥H. In specific embodiments, L≤10 mm, such as especially L≤5mm, more especially L≤3mm, most especially L≤2 mm. In specific embodiments, W≤10 mm, such as especially W≤5mm, more especially W≤3mm, most especially W≤2 mm. In specific embodiments, H≤10 mm, such as especially H≤5mm, more especially H≤3mm, most especially H≤2 mm. In specific embodiments, D≤10 mm, such as especially D≤5mm, more especially D≤3mm, most especially D≤2 mm. In specificembodiments, the body may have in embodiments a thickness in the range 50 µm - 1 mm.Further, the body may have lateral dimensions (width / diameter) in the range 100 µm – 10mm. In yet further specific embodiments, (i) D>H or (ii) W1>H and L1>H. Especially, the lateral dimensions like length, width, and diameter are at least 2 times, like at least 5 times, larger than the height. In embodiments, the luminescent material may especially be configured in a light-receiving relationship with the first series of first solid state laser devices. As such, the 2023PF80184 11 luminescent material may, in embodiments, be configured to convert at least part of the first laser light into luminescent material light. Especially, in embodiments, the luminescentmaterial may be configured to convert at least 60%, such as at least 70%, like at least 80%,especially at least 90%, like at least 95%, especially at least 98%, more especially at least 99% of the first laser light into luminescent material light. Hence, in embodiments, the luminescent material may be configured to provide partial conversion of the first laser light into luminescent material light. In such embodiments, part of the first laser light may thus pass through the luminescent material without being converted into luminescent material light, i.e., part of the (blue) first laser light may “leak” through the luminescent material. In other embodiments, the luminescent material may be configured to provide essentially full conversion of the first laser light into luminescent material light. Alternatively, in embodiments, the luminescent material may be configured to convert and / or absorb essentially all of the first laser light, i.e., no first laser light may “leak” through the luminescent material. Further, in some specific embodiments, the invention may provide a light generating system comprising a multi-chip laser package, a luminescent material, and optics, wherein: (A) the multi-chip laser package may comprise (i) a first series of first solid state laser devices, configured to generate first laser light having a first peak wavelength (λp1), (ii) a second series of second solid state laser devices configured to generate second laser light having a second peak wavelength (λp2), and (iii) a third series of third solid state laser devices configured to generate third laser light having a third peak wavelength (λp3); wherein the multi-chip laser package may further comprise a support configured to support the solid state laser devices; (B) the first peak wavelength (λp1) and the second peak wavelength (λp2) may be independently selected from the wavelength range of 440-490 nm, and the third peak wavelength (λp3) may be selected from the range of 590-780 nm; (C) the luminescent material may be configured in a transmissive mode downstream of the (first, second, third, and optional further) solid state laser devices and may be configured to convert at least part of the (first, second, third, and optional further) laser light into luminescent material light having one or more wavelengths in the wavelength range of 490-590 nm and having acentroid wavelength (λcL); wherein λcL ≥ λp1+15 nm, λcL ≥ λp2+15 nm, and λcL ≤ λp3 - 15 nm;(D) the light generating system may be configured to provide in a first operational mode of the light generating system white system light comprising the luminescent material light, at least part of the first laser light, at least part of the second laser light, and at least part of the third laser light (and at least part of any further types of laser light); and (E) the optics may be 2023PF80184 12 configured to one or more of (a) mix different light contributions to the system light, and (b) beam shape the system light. Hence, in such embodiments, the luminescent material may beconfigured to convert at least 50%, such as at least 60%, like at least 70%, especially at least80%, like at least 90%, especially at least 95% of each of the first laser light, the second laser light, and the third laser light (and optionally any further types of laser light) into luminescent material light. Especially, in such embodiments, part of the laser light may be converted into luminescent material light and another part of the laser light may pass (or leak) through the luminescent material to provide first laser light, second laser light, and third laser light to the system light. In such embodiments, tuneability of the color point of the white system light may be achieved by adjusting the amount of radiation from the different series of solid state laser devices. In embodiments, the luminescent material light may have one or more wavelengths in the wavelength range of 480-600 nm, such as in the wavelength range of 490- 590 nm, like in the wavelength range of 500-570 nm. Hence, in embodiments, the luminescent material may be configured to convert at least part of the blue first laser light into green and / or yellow luminescent material light. Further, in embodiments, the luminescent material light may have a centroid wavelength (λcL). Especially, in embodiments, the centroid wavelength (λcL) may be larger than the first peak wavelength (λp1), i.e., λcL ≥ λp1, more especially λcL ≥ λp1+10 nm, such as λcL ≥ λp1+15 nm, like ≥ λp1+20 nm, especially like ≥ λp1+25 nm. Additionally, in embodiments, the centroid wavelength (λcL) may be larger than the second peak wavelength (λp2), i.e., λcL≥ λp2, more especially λcL≥ λp2+10 nm, such as λcL≥ λp2+15 nm, like λcL≥ λp2+20 nm, especially like λcL ≥ λp2+25 nm. Similarly, in embodiments, the centroid wavelength (λcL) may be smaller than the third peak wavelength (λp3), i.e., λcL≤ λp3, more especially λcL≤ λp3-10 nm, such as λcL≤ λp3-15 nm, like λcL≤ λp3-20 nm, especially like λcL≤ λp3-25 nm. The term “centroid wavelength”, also indicated as λcL, is known in the art, and refers to the wavelength value where half of the light energy is at shorter and half the energy is at longer wavelengths; the value is stated in nanometers (nm). It is the wavelength that divides the integral of a spectral power distribution into two equal parts as expressed by the formula = Σ λ*I(λ) / (Σ I( λ)), where the summation is over the wavelength range of interest, and I(λ) is the spectral energy density (i.e. the integration of the product of the wavelength and the intensity over the emission band normalized to the integrated intensity). The centroid wavelength may e.g. be determined at operation conditions. 2023PF80184 13 Yet further, in embodiments, the luminescent material and the (second series of) second solid state laser devices may be configured such that during operation of the second solid state laser devices the second laser light may bypass the luminescent material. The term “bypass” and phrases such as “X may bypass Y”, may herein indicate that X may go past or go round element Y. In other words, the term “bypass” and phrases such as “X may bypass Y”, may herein indicate that X may follow (or be directed along) a(n alternative) trajectory that does not pass element Y. Hence, in embodiments, the luminescent material may not be configured in a light-receiving relationship with the second solid state laser devices. The luminescent material and the (second series of) second solid state laser devices may, for example, be configured such that the luminescent material is not downstream of the second solid state laser devices, i.e., an optical path of the second laser light does not pass (or intersect) the luminescent material. In another example, in embodiments, optics may be applied to redirect the second laser light, such that the second laser light does not pass (or intersect) the luminescent material, i.e., the second laser light may not be incident on the luminescent material. Further, in embodiments, one or more of the following may also apply: (i) during operation of the third solid state laser devices the third laser light may bypass the luminescent material, (ii) during operation of (an optional fourth series of) fourth solid state laser devices (see also further below) fourth laser light may bypass the luminescent material, and (iii) during operation of (an optional fifth series of) fifth solid state laser devices (see also further below) fifth laser light may bypass the luminescent material. However, this may notnecessarily be the case. In specific embodiments, the luminescent material, the second solidstate laser devices (and optionally one or more of the third solid state laser devices, the fourth solid state laser devices, and the fifth solid state laser devices) may be configured such that during operation of the (respective) solid state laser devices the second laser light (and optionally one or more of the third laser light, the fourth laser light, and the fifth laser light, respectively) may bypass the luminescent material. The light generating system may, in embodiments, be configured to provide system light. Especially, the light generating system may have a first operational mode. In embodiments, the light generating system may be configured to provide in the first operational mode (of the light generating system) white system light. Especially, in such embodiments, the (white) system light may comprise the luminescent material light, the second laser light, and the third laser light. However, in embodiments, the (white) system light may also comprise part of the (unconverted) first laser light. Especially, in embodiments, the (white) system light may comprise at most 40%, such as at most 30%, like 2023PF80184 14 at most 20%, especially at most 10%, like at most 5%, especially at most 2%, more especially at most 1% of (unconverted) first laser light. In embodiments, further contributions to the system light may also be possible, see also further below. The different contributions of light may further facilitate that, in embodiments, in a second operational mode of the light generating system the system light may be colored light. Especially, in embodiments, the light generating system may be configured to provide light having an RGB-like saturated color space. For example, in such embodiments, only some of the series of laser devices may be turned on, such as e.g. only the second series of second laser devices (therewith providing blue system light) or only the third series of third laser devices (therewith providing red system light). In another example, in embodiments, one or more series of laser devices may be turned on to provide colored light, such as i.e. the first series of first laser devices (therewith providing green phosphor-converted light) and the third series of third laser devices (therewith providing red light) may be turned on to provide yellow system light. The term “white light”, and similar terms, herein, are known to the person skilled in the art. It may especially relate to light having a correlated color temperature (CCT) between about 1800 K and 20000 K, such as between 2000 and 20000 K, especially 2700- 20000 K, for general lighting especially in the range of about 2000-7000 K, such as in the range of 2700 K and 6500 K. In embodiments, e.g. for backlighting purposes, or for other purposes, the correlated color temperature (CCT) may especially be in the range of about 7000 K and 20000 K. Yet further, in embodiments the correlated color temperature (CCT) is especially within about 15 SDCM (standard deviation of color matching) from the BBL (black body locus), especially within about 10 SDCM from the BBL, even more especially within about 5 SDCM from the BBL. In specific embodiments, the correlated color temperature (CCT) may be selected from the range of 6000-12000 K, like selected from the range of 7000-12000 K, like at least 8000 K. Yet further, in embodiments the correlated color temperature (CCT) may be selected from the range of 6000-12000 K, like selected from the range of 7000-12000 K, in combination with a CRI of at least 70. With different contributions of light to the system light it may especially be desired to provide some form of light mixing and / or beam shaping. Therefore, in embodiments, the light generating system may comprise optics. In embodiments, the optics may be configured to mix different light contributions to the system light. Especially, in embodiments, the optics may be configured to mix contributions of two or more of the second laser light, the third laser light, (optionally the fourth laser light and the fifth laser light, see also further below), and the luminescent material light. Additionally or 2023PF80184 15 alternatively, in embodiments, the optics may be configured to beam shape the system light, e.g. through collimation. The term “optics” may especially refer to (one or more) optical elements. Hence, the terms “optics” and “optical elements” may refer to the same items. The optics may include one or more or mirrors, reflectors, collimators, lenses, prisms, diffusers, phase plates, polarizers, diffractive elements, gratings, dichroics, arrays of one or more of the afore-mentioned, etc. Alternatively or additionally, the term “optics” may refer to a holographic element or a mixing rod. In embodiments, the optics may include one or more of beam expander optics and zoom lens optics. See further above for examples of optics. In embodiments, the optics may comprise an integrator, like a “Koehler integrator” (or “Köhler integrator”). Furthermore, in embodiments, the optics may comprise a plurality of lenses. In embodiments, such lenses may, for example, comprise one or more of (conventional) (a)spherical lenses, Fresnel-type lenses, fly-eye type lenses, micro-lens arrays and micro- prism type lenses. Especially, in embodiments, downstream of each solid state laser device a lens may be configured. More especially, in embodiments, downstream each of the first solid state laser devices a first lens may be configured. In embodiments, the luminescent material may be configured downstream of both the solid state laser devices and the lenses, see also further below. However, in other embodiments, the luminescent material may be configured upstream of a subset of the lenses and downstream of the first solid state laser devices. In such embodiments, the light generating system (especially the optics) may further comprise one or more of an auxiliary lens, a light mixing element (such as e.g. a light mixing rod, a micro-lens array, an engineered diffuser (e.g. with a top-hat distribution, or any other tailored intensity distribution)), a double-sided micro-lens array, an engineered (e.g. top-hat or any other tailored intensity distribution) diffuser, and a(n apertured) light exit. Herein, a light mixing element may refer to an element configured to mix different inputs of light into a homogeneous light output, especially, in embodiments, a light mixing rod may refer to a solid rod lined with reflective material and configured to mix light through total internal reflection. The term “engineered diffuser” and similar terms may herein refer to a beam shaping optic that may be configured to both homogenize an input beam of light while shaping an intensity profile and spatial distribution of an output beam of light. To exemplify the optics, in embodiments, the luminescent material may be coated with a low-pass filter, and downstream of the luminescent material may consecutively be configured: a micro-lens array, an auxiliary lens, and a light mixing element (such as e.g. a light mixing rod). In other embodiments, for example, downstream of the luminescent material may consecutively be 2023PF80184 16 configured: a first collimator, a double-sided micro-lens array (or engineered diffuser), an auxiliary lens, and a light exit comprising an aperture. In embodiments, the first collimator may be configured to collimate the solid state laser light and the luminescent light prior to light mixing and beam shaping by the (further) optics. The double-sided micro-lens array (and / or engineered top-hat diffuser) may, in embodiments, comprise either a monolithic structure or separate elements configured functionally (air-)spaced relative to each other. Hence, in specific embodiments, the optics may comprise a plurality of lenses, wherein downstream of each solid state laser device a lens may be configured, and wherein upstream of a subset of the lenses and downstream of the first solid state laser devices the luminescent material may be configured. Such embodiments may especially be beneficial as the lenses may facilitate good color uniformity in the (output) system light. The luminescent material may, in embodiments, especially be configured at a first distance (d1) from the first solid state laser devices. In embodiments, the luminescent material may be configured physically connected to (especially configured over or covering) the first solid state laser devices, i.e., d1=0 µm. However, in other embodiments, the luminescent material may be configured remote from, but at close proximity to the first solid state laser devices. Especially, in such embodiments, the first distance (d1) may be selectedfrom the range of 0 µm ≤ d1 ≤ 150 µm, such as from the range of 5 µm ≤ d1 ≤ 100 µm, likefrom the range of 10 µm ≤ d1 ≤ 100 µm, especially from the range of 15 µm ≤ d1 ≤ 50 µm. Further, in embodiments, the first distance (d1) may be selected from the range of ≥1 mm, such as from the range of ≥ 3 mm, like from the range of ≥ 5 mm. Further, in yet other embodiments, the luminescent material may be configured (substantially) remote from the first solid state laser devices. Especially, in embodiments, as mentioned above, the luminescent material may be configured downstream of both the solid state laser devices and the lenses. Hence, in such embodiments, the first distance (d1) may be relatively large, such as e.g. d1≥100 µm, like d1≥500 µm, especially d1≥1 mm, more especially d1≥5 mm. Further, in such embodiments, the optics may comprise a light focusing arrangement, a thermally conductive body, and a collimator. Especially, in embodiments, the thermally conductive body may comprise the luminescent material (configured in the transmissive mode). For example, in embodiments, the luminescent material may be embedded in the thermally conductive body. The light focusing arrangement may, in embodiments, be configured downstream of the solid state laser devices. Especially, in embodiments, the light focusing arrangement may be configured to focus the laser light, such that the first laser light may be 2023PF80184 17 incident on the luminescent material. Further, in embodiments, the light focusing arrangement may be configured to direct the other types (i.e. second, third, fourth, …) of laser light such that said laser light may bypass the luminescent material. For example, in embodiments, the thermally conductive body may comprise a hole or slit where laser light may propagate through. Additionally or alternatively, in embodiments, the thermally conductive body may comprise a transmissive diffuser (see also below) and laser light may be incident on and transmitted by the transmissive diffuser. Hence, in embodiments, the light focusing arrangement may be configured to focus first laser light onto the luminescent material (and (ii) second laser light and third laser light (and optionally fourth and / or fifth laser light) onto the transmissive diffuser). Therefore, in embodiments, the light focusing arrangement may comprise one or more of (i) a Fresnel lens, (ii) an engineered transmissive diffuser (with a batwing or donut-like internal distribution), and (iii) a supplemental lens. Further, the thermally conductive body may, in embodiments, be configured downstream of the light focusing arrangement. The thermally conductive body may especially, in embodiments, comprise a heat spreader, such as e.g. a sapphire plate or a (white) ceramic plate. Yet further, in embodiments, the thermally conductive body may comprise a transmissive diffuser. In such embodiments, the transmissive diffuser may especially comprise a micro-optical element configured for light intensity re-distribution. The transmissive diffuser may, in embodiments, especially be transmissive for at least the second laser light, the third laser light(, and optionally the fourth and / or the fifth laser light). For example, in embodiments, the transmissive diffuser and the luminescent material may both be embedded in a white ceramic plate. The transmissive diffuser and the luminescent material may especially be configured adjacent to (e.g. next to or in concentric rings relative to) each other on (or in) the thermally conductive body. For example, in embodiments, the luminescent material and the transmissive diffuser may be embedded in the thermally conductive body such that the luminescent material forms a concentric ring around the transmissive diffuser. However, such embodiments may not necessarily be applied. Yet further, in embodiments, the collimator may be configured downstream of the thermally conductive body. In embodiments, the collimator may be configured to one or more of collimate, mix, and beam shape light incident on the collimator (from the thermally conductive body). Especially, in embodiments, the collimator may be configured to one or more of collimate, mix, and beam shape the second laser light, third laser light, luminescentmaterial light(, and optionally fourth and fifth laser light). Therefore, in embodiments, thecollimator may e.g. comprise one or more of a total internal reflection (TIR) collimator, a set 2023PF80184 18 of collimating lenses, a reflector, and a Fresnel-lens. Hence, in embodiments, the optics may comprise a light focusing arrangement, a thermally conductive body comprising a diffuser and the luminescent material, and a collimator, wherein the light focusing arrangement may be configured downstream of the solid state laser devices and upstream of the thermally conductive body, wherein the light focusing arrangement may be configured to focus (i) first laser light onto the luminescent material and (ii) second laser light and third laser light onto the diffuser, and wherein the collimator may be configured downstream of the thermally conductive body. As briefly hinted above, in embodiments, the (light generating system, especially the) multi-chip laser package may comprise a fourth series of fourth solid state laser devices. The fourth series of fourth solid state laser devices may, in embodiments, comprise n4 fourth solid state laser devices. Especially, in embodiments, n4 may be at least1, especially at least 2, such as at least 3, like at least 4, especially at least 5, such as at least6. Further, in embodiments, n4 may be at most 20, like at most 15, such as at most 10, especially at most 8. The fourth solid state laser devices may, in embodiments, be configured to generate fourth laser light having a fourth peak wavelength (λp4). In embodiments, the fourth solid state laser devices may be configured to provide light having a wavelength in the green wavelength range. In embodiments, the fourth peak wavelength (λp4) may be selected from the range of 480-600 nm, such as from the range of 490-590 nm, especially from the range of 510-570 nm, like from the range of 510-550 nm. Hence, in embodiments, the fourth laser light may be green light. Further, in embodiments, the fourth peak wavelength (λp4) may be larger than the first peak wavelength (λp1), i.e., λp4 ≥ λp1, more especially λp4 ≥ λp1+10 nm, such as λp4 ≥ λp1+15 nm, like λp4≥ λp1+20 nm, especially like λp4≥ λp1+25 nm. Additionally, in embodiments, the fourth peak wavelength (λp4) may be larger than the second peak wavelength (λp2), i.e., λp4 ≥ λp2, more especially λp4 ≥ λp2+10 nm, such as λp4 ≥ λp2+15 nm, like λp4 ≥ λp2+20 nm, especially like λp4 ≥ λp2+25 nm. Similarly, in embodiments, the fourth peak wavelength (λp4) may be smaller than the third peak wavelength (λp3), i.e., λp4≤ λp3, more especially λp4≤ λp3-10 nm, such as λp4≤ λp3-15 nm, like λp4≤ λp3-20 nm, especially like λp4 ≤ λp3-25 nm. The fourth laser light may, in embodiments, provide a (green) contribution of light to the system light. Especially, in embodiments, the light generating system may be configured to provide in the first operational mode (of the light generating system) white system light comprising the luminescent material light, the second laser light, the third laser 2023PF80184 19 light, and the fourth laser light. Hence, in embodiments, the multi-chip laser package may comprise a fourth series of fourth solid state laser devices configured to generate fourth laser light having a fourth peak wavelength (λp4) selected from the wavelength range of 490-590nm, wherein λp4 ≥ λp1+15 nm, λp4 ≥ λp2+15 nm, and λp4 ≤ λp3 – 15 nm, and the lightgenerating system may be configured to provide in the first operational mode of the light generating system white system light comprising the luminescent material light, the second laser light, the third laser light, and the fourth laser light. Such embodiments may be beneficial as the fourth laser devices may provide a green contribution to the system light, therewith making the system less dependent on the luminescent material for a green contribution to obtain a spectrum with RGB primaries. The here described embodiments may especially facilitate a relatively simple configuration to provide a more homogeneous spectral (power) distribution and therewith improved color rendering using laser sources. Furthermore, if the amount of blue light (especially first laser light) transmitted through the luminescent material is configured fixed, tuning of the amount of green (i.e. fourth) laser light may provide tuneability of the color point of the system light, hence, embodiments comprising a fourth series of fourth solid state laser devices may provide an RGB laser tunable light source with high CRI. Moreover, in embodiments, the light generating system may comprise essentially the same amount of solid state laser devices that provide green laser light as solid state laser devices that provide blue laser light, i.e., n4 / (n1+n2)=1. However, in other embodiments, the light generating system may comprise a different amount of solid state laser devices that provide green laser light relative to solid state laser devices that provide blue laser light. Especially, in embodiments, 0.1≤ (n4) / (n1+n2) ≤8, especially 0.1 ≤ (n4) / (n1+n2) ≤ 5. In embodiments, the light generating system may be configured such that the system light comprises essentially no luminescent material light. In such embodiments it may be beneficial that 1 ≤ (n4) / (n1+n2) ≤ 10, such as 1 ≤ (n4) / (n1+n2) ≤ 8, especially 2 ≤ (n4) / (n1+n2) ≤ 5. In other embodiments, the light generating system may be configured such that the system light does comprise luminescent material light. In such embodiments, it may be beneficial that 0 ≤ (n4) / (n1+n2) ≤ 1, such as 0.1 ≤ (n4) / (n1+n2) ≤ 0.6, especially 0.1 ≤ (n4) / (n1+n2) ≤ 0.4. As indicated above, in embodiments, the light generating system may not comprise any fourth solid state laser devices. In such embodiments, the green contribution to the (white) system light may be (solely) provided by the luminescent material light, resulting in a relatively high CRI. However, in other embodiments, the light generating system may comprise fourth solid state laser devices that may be configured to (also) provide a green 2023PF80184 20 contribution to the (white) system light, resulting in a higher luminous flux with sufficient CRI (at least 70). In embodiments, it may thus be desired to have more blue (i.e. first and second) laser devices providing (both blue and) phosphor-converted green light than green (i.e. fourth) laser devices. Additionally or alternatively, in embodiments, the (light generating system, especially the) multi-chip laser package may comprise a fifth series of fifth solid state laser devices. The fifth series of fifth solid state laser devices may, in embodiments, comprise n5 fifth solid state laser devices. Especially, in embodiments, n5 may be at least 1, especially at least 2, such as at least 3, like at least 4, especially at least 5, such as at least 6. Further, in embodiments, n5 may be at most 20, like at most 15, such as at most 10, especially at most 8. The fifth solid state laser devices may, in embodiments, be configured to generate fifth laser light having a fifth peak wavelength (λp5). In embodiments, the fifth solid state laser devices may be configured to provide light having a wavelength in the red wavelength range. Especially, in embodiments, the fifth peak wavelength (λp5) may be selected from the range of 590-780 nm, such as from the range of 620-780 nm, like from the range of 640-750 nm. Hence, in embodiments, the fifth laser light may be red light. In embodiments, the fifth solid state laser devices may comprise laser devices of essentially the same bin as the third solid state laser devices, i.e., λp5is (substantially) equal to λp3. However, in specific embodiments, the fifth solid state laser devices may comprise laser devices of a bin different from the third solid state laser devices. Especially, in embodiments, 0 nm ≤ |λp3-λp5| ≤ 80 nm, such as 0 nm ≤ |λp3-λp5| ≤ 75 nm, like 4 nm ≤ |λp3-λp5| ≤ 50 nm, especially 8 nm ≤ |λp3-λp5| ≤ 50 nm. A too large difference between the third peak wavelength and the fifth peak wavelength may result in one of the types of light being in the IR wavelength range rather than the visible (red) wavelength range, whereas a too little difference may result in a less homogeneous spectral power distribution of the system light. Further, in embodiments, the fifth peak wavelength (λp5) may be larger than the fourth peak wavelength (λp4), i.e., λp5 ≥ λp4, more especially λp5 ≥ λp4+10 nm, such as λp5 ≥ λp4+15 nm, like λp5≥ λp4+20 nm, especially like λp5≥ λp4+25 nm. The fifth laser light may, in embodiments, provide a (second) red contribution of light to the system light. Especially, in embodiments, the light generating system may be configured to provide in the first operational mode (of the light generating system) white system light comprising the luminescent material light, the second laser light, the third laser light, the fifth laser light, and optionally the fourth laser light. Hence, in embodiments, the multi-chip laser package may comprise a fifth series of fifth solid state laser devices 2023PF80184 21 configured to generate fifth laser light having a fifth peak wavelength (λp5) selected from the wavelength range of 590-780 nm, wherein λp5≥ λp4+15 nm, and 0 nm ≤ |λp3-λp5| ≤ 75 nm, and the light generating system may be configured to provide in the first operational mode of the light generating system white system light comprising the luminescent material light, the second laser light, the third laser light, the fifth laser light, and optionally the fourth laser light. Such embodiments may be beneficial as red solid state laser devices may be relatively low-powered and thus the fifth laser devices may provide a second red contribution to the system light to increase their total power in the spectrum. The here described embodiments may especially facilitate a relatively simple configuration to provide a broader spectral distribution and therewith improved color rendering using laser sources. Moreover, in embodiments, the light generating system may comprise essentially the same amount of solid state laser devices that provide red laser light as solid state laser devices that provide blue laser light, i.e., (n3+n5) / (n1+n2)=1. However, in other embodiments, the light generating system may comprise a different amount of solid state laser devices that provide red laser light relative to solid state laser devices that provide blue laser light. Especially, in embodiments, 0.1 ≤ (n3+n5) / (n1+n2) ≤ 15, such as 0.2 ≤(n3+n5) / (n1+n2) ≤ 5, especially 0.5 ≤ (n3+n5) / (n1+n2) ≤ 2. In embodiments, the lightgenerating system may be configured such that the system light comprises essentially no luminescent material light. In such embodiments it may be beneficial that (n3+n5) / (n1+n2) ≥ 1, such as (n3+n5) / (n1+n2) ≥ 5, however (n3+n5) / (n1+n2) ≤ 15. Such embodiments may be beneficial as more red laser devices may be desired to provide red light with similar power relative to the blue light of the blue (second) laser devices. In other embodiments, the light generating system may be configured such that the system light does comprise luminescent material light. In such embodiments, it may be beneficial that 0.1 ≤ (n3+n5) / (n1+n2) ≤ 2, such as 0.1 ≤ (n3+n5) / (n1+n2) ≤ 1, especially 0.2 ≤ (n3+n5) / (n1+n2) ≤ 0.6. The light generating system may thus provide light input from several different light sources each providing laser light with their own respective wavelengths. In specific embodiments, for the light generating system may apply that: (i) the first peak wavelength (λp1) may be selected from the range of 450-480 nm, (ii) the second peak wavelength (λp2) may be selected from the range of 450-480 nm, (iii) the third peak wavelength (λp3) may be selected from the range of 620-680 nm, (iv) the fourth peak wavelength (λp4) may be selected from the range of 510-550 nm, and (v) the fifth peak wavelength (λp5) may be selected from the range of 620-680 nm. Hence, in such 2023PF80184 22 embodiments, the system light may be white system light comprising red (third and fifth laser light), green (luminescent material light and fourth laser light), and blue (second laser light) contributions. Furthermore, in embodiments, the light generating system may comprise a control system. Especially, in embodiments, the control system may be configured to control a spectral power distribution of the system light. The control system may do so (i.e., may control a spectral power distribution of the system light) by controlling the solid state laser devices. For example, in embodiments, the control system may be configured to increase or reduce power to the solid state laser devices, or even to fully turn the (individual) devices on or off. Especially, in embodiments, the control system may be configured to individually control the solid state laser devices. More especially, in embodiments, the control system may be configured to individually control one or more of the first, the second, the third, the fourth, and the fifth solid state laser devices. Hence, in embodiments, the light generating system may comprise a control system, wherein the control system is configured to control a spectral power distribution of the system light by controlling the solid state laser devices. The term “controlling” and similar terms especially refer at least to determining the behavior or supervising the running of an element. Hence, herein “controlling” and similar terms may e.g. refer to imposing behavior to the element (determining the behavior or supervising the running of an element), etc., such as e.g. measuring, displaying, actuating, opening, shifting, changing temperature, etc.. Beyond that, the term “controlling” and similar terms may additionally include monitoring. Hence, the term “controlling” and similar terms may include imposing behavior on an element and also imposing behavior on an element and monitoring the element. The controlling of the element can be done with a control system, which may also be indicated as “controller”. The control system and the element may thus at least temporarily, or permanently, functionally be coupled. The element may comprise the control system. In embodiments, the control system and element may not be physically coupled. Control can be done via wired and / or wireless control. The term “control system” may also refer to a plurality of different control systems, which especially are functionally coupled, and of which e.g. one control system may be a master control system and one or more others may be slave control systems. A control system may comprise or may be functionally coupled to a user interface. Hence, in embodiments the control system may (also) be configured to be controlled by an App on a remote device. In such embodiments the control system of the lighting system may be a slave control system or control in a slave mode. For instance, the 2023PF80184 23 lighting system may be identifiable with a code, especially a unique code for the respective lighting system. The control system of the lighting system may be configured to be controlledby an external control system which has access to the lighting system on the basis ofknowledge (input by a user interface of with an optical sensor (e.g. QR code reader) of the (unique) code. The lighting system may also comprise means for communicating with other systems or devices, such as on the basis of Bluetooth, Thread, WIFI, LiFi, ZigBee, BLE or WiMAX, or another wireless technology. The system, or apparatus, or device may execute an action in a “mode” or “operation mode” or “mode of operation” or “operational mode”. The term “operational mode may also be indicated as “controlling mode”. Likewise, in a method an action or stage, or step may be executed in a “mode” or “operation mode” or “mode of operation” or “operational mode”. This does not exclude that the system, or apparatus, or device may also be adapted for providing another controlling mode, or a plurality of other controlling modes. Likewise, this may not exclude that before executing the mode and / or after executing the mode one or more other modes may be executed. However, in embodiments a control system may be available, that is adapted to provide at least the controlling mode. Would other modes be available, the choice of such modes may especially be executed via a user interface, though other options, like executing a mode in dependence of a sensor signal or a (time) scheme, may also be possible. The operation mode may in embodiments also refer to a system, or apparatus, or device, that can only operate in a single operation mode (i.e. “on”, without further tunability). Hence, in embodiments, the control system may control in dependence of one or more of an input signal of a user interface, a sensor signal (of a sensor), and a timer. The term “timer” may refer to a clock and / or a predetermined time scheme. Additionally or alternatively, in embodiments, the control system may be configured to control a spectral power distribution of the system light by individually controlling the series of solid state laser devices. Especially, in embodiments, the control system may be configured to individually control one or more of the first, the second, the third, the fourth, and the fifth series of solid state laser devices. Hence, in such embodiments, the solid state laser devices within one series may not be individually controlled, but may only be controlled as the series as a whole. The light generating system may thus comprise multiple series each comprising a plurality of solid state laser devices. In embodiments, the solid state laser devices may especially be configured in a linear array. The linear array may be a 1D or 2023PF80184 24 especially 2D array, of n*m laser devices, wherein n may in embodiments be selected from the range of 1-8, such as 1-6, like 2-5, especially 2-4, such as in embodiments 3 or in embodiments 4, and m may be selected from the range of equal to or larger than n, such as especially selected from the range of at least 3, like at least 4, such as at least 5. In embodiments, the array may thus comprise rows of n laser devices and columns of m laser devices. Herein, in embodiments, the multi-chip laser package may further comprise a plurality of channels. In some embodiments, the channels may essentially be the rows of the n*m array. Hence, in such embodiments, the multi-chip laser package may comprise n channels. However, this may not necessarily be the case. Each of the channels may, in embodiments, comprise electronics configured in electrical contact with the (series of) laser devices. In embodiments, the channels may especially comprise electronics configured to power and drive the laser devices. In embodiments, the channels may comprise a combination of any of the solid state laser devices. However, in some embodiments, the different types of solid state laser devices may be ordered in different channels. Especially, in embodiments, a first channel may comprise the first series (of first laser devices). Additionally of alternatively, in embodiments, the first channel may comprise the second series (of second laser devices). Especially, in specific embodiments, the first channel may comprise both the first series and the second series. Furthermore, a second channel may comprise the third series (of third laser devices). Additionally or alternatively, in embodiments, the second channel may comprise the fifth series (of fifth laser devices). Especially, in embodiments, the second channel may comprise both the third series and the fifth series. However, in other embodiments, the fifthseries may be comprised by a different channel, such as e.g. a third channel. Moreover, inembodiments, the multi-chip laser package may comprise a fourth channel. In embodiments, the fourth channel may comprise the fourth series (of fourth laser devices). However, in embodiments, the fourth series may also be comprised by one or more of the other channels (e.g. the first channel). Note that herein, in embodiments, the terms first, second, third, and fourth channel are used for distinguishing between similar channels and not necessarily for describing a sequential or chronological order. In contrast to the situation described further above, in embodiments where the multi-chip laser package comprises the plurality of channels, the control system may be configured to control a spectral power distribution of the system light by individually controlling the channels. Hence, in specific embodiments, the multi-chip laser package may comprise a plurality of channels, wherein a first channel may comprise the first series and the 2023PF80184 25 second series, and wherein a second channel comprises the third series, and wherein the control system may be configured to control a spectral power distribution of the system light by individually controlling the channels. In embodiments, the control system may thus be configured to control the spectral power distribution of the system light in multiple different ways, i.e., by controlling the laser devices, by controlling the series, and / or by controlling the channels. Hence, the control system may be configured to provide tunability of the correlated color temperature of the multi-chip laser package. Furthermore, in embodiments, the control system may be configured to control in the first operational mode the correlated color temperature of the system light between 2200-9000 K, such as between 2700-9000 K, like between 3000-9000 K, especially between 3000-7500 K. Additionally, in embodiments, the control system may be configured to control in the first operational mode a color rendering index of the systemlight in the range of at least 70, such as at least 80, especially at least 90. The light generatingsystem may especially, in embodiments, be operated such that the system light has a broad range of color tunability with a wide color gamut and high color saturation. In alternative embodiments, the light generating system may be operated such that the system light has a broad range of color tunability with high CRI (CRI>70) and improved luminous flux. Referring back to the luminescent material, in embodiments, the term “luminescent material” especially refers to a material that can convert first radiation,(especially one or more of UV radiation and blue radiation,) into second radiation. In general, the first radiation and second radiation have different spectral power distributions. Hence, instead of the term “luminescent material”, also the terms “luminescent converter” or “converter” may be applied. Further, instead of the term “luminescent material” also the term “phosphor” may be applied. These terms are known to the person skilled in the art. In general, the second radiation has a spectral power distribution at larger wavelengths than the first radiation, which is the case in the so-called down-conversion. In specific embodiments, however the second radiation has a spectral power distribution with intensity at smaller wavelengths than the first radiation, which is the case in the so-called up-conversion. In embodiments, the “luminescent material” may especially refer to a material that can convert radiation into e.g. visible and / or infrared light. For instance, in embodiments the luminescent material may be able to convert one or more of UV radiation and blue radiation, into visible light. The luminescent material may in specific embodiments also convert radiation into infrared radiation (IR). Hence, upon excitation with radiation, the luminescent material emits radiation. In general, the luminescent material will be a down 2023PF80184 26 converter, i.e. radiation of a smaller wavelength is converted into radiation with a larger wavelength (λex<λem), though in specific embodiments the luminescent material may comprise up-converter luminescent material, i.e. radiation of a larger wavelength is converted into radiation with a smaller wavelength (λex>λem). In embodiments, the term “luminescence” may refer to phosphorescence. In embodiments, the term “luminescence” may also refer to fluorescence. Instead of the term “luminescence”, also the term “emission” may be applied. Hence, the terms “first radiation” and “second radiation” may refer to excitation radiation and emission (radiation), respectively. Likewise, the term “luminescent material” may in embodiments refer to phosphorescence and / or fluorescence. The term “luminescent material” may also refer to a plurality of different luminescent materials. Examples of possible luminescent materials are indicated below. Hence, the term “luminescent material” may in specific embodiments also refer to a luminescent material composition. The term “luminescent material” herein may also refer to a material comprising a luminescent material, such as a light transmissive host comprising the luminescent material. In embodiments, luminescent materials are selected from garnets and nitrides, especially doped with trivalent cerium or divalent europium, respectively. The term “nitride” may also refer to oxynitride or nitridosilicate, etc. Alternatively or additionally, the luminescent material(s) may be selected from silicates, especially doped with divalent europium. Especially, the luminescent material is configured to convert at least part of the light source light into luminescent material light, wherein the luminescent material may comprise a (garnet) luminescent material of the type A3B5O12:Ce, wherein A comprises one or more of Y, La, Gd, Tb and Lu, and wherein B comprises one or more of Al, Ga, In and Sc. Hence, the luminescent material light may e.g. be green light or yellow light (or in specific embodiments even orange (dependent upon the composition of the garnet and cerium concentration)). However, other embodiments are also possible, see below. In embodiments, 0.05-10% of the A elements comprise Ce, even more especially 0.05-5%, such as 0.1-5%.Especially, embodiments, 0.1-3% of the A elements comprise Ce, such as up to 2%, likeselected from the range of 0.1-1.5%, such as at least above 0.5%. Especially, a luminescent material comprises conversion material or is a conversion material. The luminescent material may comprise an organic group that converts the light, or a molecule that converts the light, or an inorganic group that converts the light,etc. Such groups (or molecule) may be indicated as converter element. The garnet type 2023PF80184 27 material as indicated above, comprises cerium (Ce) as converter element. Cerium comprising garnets are well known in the art. Especially, in specific embodiments the luminescent material comprises a luminescent material of the type A3B5O12:Ce, wherein A in embodiments comprises one or more of Y, La, Gd, Tb and Lu, especially (at least) one or more of Y, Gd, Tb and Lu, and wherein B in embodiments comprises one or more of Al, Ga, In and Sc. Especially, A may comprise one or more of Y, Gd and Lu, such as especially one or more of Y and Lu. Especially, B may comprise one or more of Al and Ga, more especially at least Al, such as essentially entirely Al. Hence, especially suitable luminescent materials are cerium comprising garnet materials. Embodiments of garnets especially include A3B5O12 garnets, wherein A comprises at least yttrium or lutetium and wherein B comprises at least aluminum. Such garnets may be doped with cerium (Ce), with praseodymium (Pr) or a combination of cerium and praseodymium; especially however with Ce. Especially, B comprises aluminum (Al), however, B may also partly comprise gallium (Ga) and / or scandium (Sc) and / or indium (In), especially up to about 20% of Al, more especially up to about 10 % of Al (i.e. the B ions essentially consist of 90 or more mole % of Al and 10 or less mole % of one or more of Ga, Sc and In); B may especially comprise up to about 10% gallium. In another variant, B and O may at least partly be replaced by Si and N. The element A may especially be selected from the group consisting of yttrium (Y), gadolinium (Gd), terbium (Tb) and lutetium (Lu). Further, Gd and / or Tb are especially only present up to an amount of about 20% of A. In a specific embodiment, the garnet luminescent material comprises (Y1-xLux)3B5O12:Ce, wherein x is equal to or larger than 0 and equal to or smaller than 1. The term “:Ce”, indicates that part of the metal ions (i.e. in the garnets: part of the “A” ions) in the luminescent material is replaced by Ce. For instance, in the case of (Y1-xLux)3Al5O12:Ce, part of Y and / or Lu is replaced by Ce. This is known to the person skilled in the art. Ce will replace A in general for not more than 10%; in general, the Ce concentration will be in the range of 0.1 to 4%, especially 0.1 to 2% (relative to A). Assuming 1% Ce and 10% Y, the full correct formula could be (Y0.1Lu0.89Ce0.01)3Al5O12. Ce in garnets is substantially or only in the trivalent state, as is known to the person skilled in the art. In embodiments, the luminescent material (thus) comprises A3B5O12 wherein in specific embodiments at maximum 10% of B-O may be replaced by Si-N. In specific embodiments the luminescent material comprises (Yx1-x2- x3A’x2Cex3)3(Aly1-y2B’y2)5O12, wherein x1+x2+x3=1, wherein x3>0, wherein 0<x2+x3≤0.2, wherein y1+y2=1, wherein 0≤y2≤0.2, wherein A’ comprises one or more elements selected 2023PF80184 28 from the group consisting of lanthanides, and wherein B’ comprises one or more elements selected from the group consisting of Ga, In and Sc. In embodiments, x3 is selected from the range of 0.001-0.1. In the present invention, especially x1>0, such as >0.2, like at least 0.8. Garnets with Y may provide suitable spectral power distributions. In specific embodiments at maximum 10% of B-O may be replaced by Si-N. Here, B in B-O refers to one or more of Al, Ga, In and Sc (and O refers to oxygen); in specific embodiments B-O may refer to Al-O. As indicated above, in specific embodiments x3 may be selected from the range of 0.001-0.04. Especially, such luminescent materials may have a suitable spectral distribution (see however below), have a relatively high efficiency, have a relatively high thermal stability, and allow a high CRI (optionally in combination with (the) light of other sources of light as described herein). Hence, in specific embodiments A may be selected from the group consisting of Lu and Gd. Alternatively or additionally, B may comprise Ga. Hence, in embodiments the luminescent material comprises (Yx1-x2- x3(Lu,Gd)x2Cex3)3(Aly1-y2Gay2)5O12, wherein Lu and / or Gd may be available. Even more especially, x3 is selected from the range of 0.001-0.1, wherein 0<x2+x3≤0.1, and wherein 0≤y2≤0.1. Further, in specific embodiments, at maximum 1% of B-O may be replaced by Si- N. Here, the percentage refers to moles (as known in the art); see e.g. also EP3149108. In yet further specific embodiments, the luminescent material comprises (Yx1-x3Cex3)3Al5O12, wherein x1+x3=1, and wherein 0<x3≤0.2, such as 0.001-0.1. In specific embodiments, the light generating device may only include luminescent materials selected from the type of cerium comprising garnets. In even further specific embodiments, the light generating device includes a single type of luminescent materials, such as (Yx1-x2-x3A’x2Cex3)3(Aly1-y2B’y2)5O12. Hence, in specific embodiments the light generating device comprises luminescent material, wherein at least 85 weight%, even more especially at least about 90 wt.%, such as yet even more especially at least about 95 weight % of the luminescent material comprises (Yx1-x2-x3A’x2Cex3)3(Aly1-y2B’y2)5O12. Here, wherein A’ comprises one or more elements selected from the group consisting of lanthanides, and wherein B’ comprises one or more elements selected from the group consisting of Ga, In and Sc, wherein x1+x2+x3=1, wherein x3>0, wherein 0<x2+x3≤0.2, wherein y1+y2=1, wherein 0≤y2≤0.2. Especially, x3 is selected from the range of 0.001-0.1. Note that in embodiments x2=0. Alternatively or additionally, in embodiments y2=0. In specific embodiments, A may especially comprise at least Y, and B may especially comprise at least Al. 2023PF80184 29 Alternatively or additionally, the luminescent material may comprise a luminescent material of the type A3Si6N11:Ce3+, wherein A comprises one or more of Y, La, Gd, Tb and Lu, such as in embodiments one or more of La and Y. In specific embodiments, the luminescent material may comprise at least two different luminescent materials configured to provide luminescent material light having different spectral power distributions. As can be derived from the above, the term “different luminescent materials” may refer to luminescent materials that are different, or to two compositions, each including at least one luminescent material in common, but wherein the compositions differ. For instance, a primary luminescent material comprising luminescent materials A and B, and a secondary luminescent material comprising only A or only B, or comprising both A and B, but in a different weight ratio. Such primary luminescent material and secondary luminescent material may have different spectral power distributions of their respective luminescent material light. The garnet type luminescent material may also be described with an alternative formula A3B’2C’’3O12. Here, A may comprise one or more of (i) rare earth ions, such as one or more selected from Y3+, Lu3+, Gd3+, Tb3+, La3+, and (ii) divalent cations, such as Ca2+. Here, B may comprise one or more of (i) trivalent cations, such as one or more of Al3+, Ga3+, Sc3+, Sb3+, and In3+, and (ii) divalent cations, such as one or more of Mg2+and Mn2+. Here, C may comprise one or more of (i) trivalent cations, such as one or more of Ga3+and Al3+, (ii) divalent cations, such as Mn2+, and (iii) tetravalent cations, such as one or more of Si4+and Ge4+. With such ions, the garnet crystal structure can be maintained. Other substitutions than mentioned may also be possible. Alternatively or additionally, also other luminescent materials may be applied. For instance quantum dots and / or organic dyes may be applied and may optionally be embedded in transmissive matrices like e.g. polymers, like PMMA, or polysiloxanes, etc.etc.. Instead of quantum dots or in addition to quantum dots, also other quantum confinementstructures may be used. The term “quantum confinement structures” should, in the context of the present application, be understood as e.g. quantum wells, quantum dots, quantum rods, tripods, tetrapods, or nano-wires, etcetera. Different luminescent materials may have different spectral power distributions of the respective luminescent material light. Alternatively or additionally, such different luminescent materials may especially have different color points (or dominant wavelengths). 2023PF80184 30 As indicated above, other luminescent materials may also be possible. Hence, in specific embodiments the luminescent material is selected from the group of divalent europium containing nitrides, divalent europium containing oxynitrides, divalent europium containing silicates, cerium comprising garnets, and quantum structures. Quantum structures may e.g. comprise quantum dots or quantum rods (or other quantum type particles) (see above). Quantum structures may also comprise quantum wells. Quantum structures may also comprise photonic crystals. As indicated above, the light generating system, especially the multi-chip laser package, comprises a light generating device. A light generating device may especially be configured to generate device light. Especially, the light generating device may comprise a (solid state) light source. The light source may especially configured to generate light source light. In embodiments, the device light may essentially consist of the device light. In otherembodiments, the device light may essentially consist of converted light source light. In yetother embodiments, the device light may comprise (unconverted) light source light and converted light source light. Light source light may be converted with a luminescent material into luminescent material light and / or with an upconverter into upconverted light (see also above). The term “light generating device” may also refer to a plurality of light generating devices which may provide device light having essentially the same spectral power distributions. In specific embodiments, the term “light generating device” may also refer to a plurality of light generating devices which may provide device light having different spectral power distributions. The term “light source” may also relate to a plurality of light sources, such as 2-2000 (solid state) laser light sources. Hence, the term laser diode may also refer to a plurality of laser diodes. The light source may have a light escape surface. For lasers it may for instance be the laser die, or when a resin is applied to the laser die, the outer surface of the resin. In principle, it may also be the terminal end of a fiber. The term escape surface especially relates to that part of the light source, where the light actually leaves or escapes from the light source. The light source is configured to provide a beam of light. This beam of light (thus) escapes from the light exit surface of the light source. Likewise, a light generating device may comprise a light escape surface, such as an end window. Further, likewise a light generating system may comprise a light escape surface, such as an end window. 2023PF80184 31 A position where system light escapes from the light generating system may also be indicated as light exit. This may be a light transmissive window or an opening (in the system). The light transmissive window may in embodiments be provided by an optical component. In embodiments, the light source may comprise one or more micro-optical elements (array of micro lenses) downstream of a single solid-state light source, such as a laser, or downstream of a plurality of solid-state light sources (i.e. e.g. shared by multiple lasers). In embodiments, the light source may comprise a laser with on-chip optics. In embodiments, the light source comprises pixelated single lasers (with or without optics) (offering in embodiments on-chip beam steering). The light source may especially be configured to generate light source light having an optical axis (O), (a beam shape,) and a spectral power distribution. The light source light may in embodiments comprise one or more bands, e.g. having band widths as known for lasers. The term “light source” may (thus) refer to a light generating element as such, like e.g. a solid state light source, or e.g. to a package of the light generating element, such as a solid state light source, and one or more of a luminescent material comprising element and (other) optics, like a lens, a collimator. A light converter element (“converter element” or “converter”) may comprise a luminescent material comprising element. For instance, a solid state light source as such, like a blue laser, is a light source. A combination of a solid state light source (as light generating element) and a light converter element, such as a blue laser and a light converter element, optically coupled to the solid state light source, may also be a light source (but may also be indicated as light generating device). Hence, a white laser is a light source (but may e.g. also be indicated as (white) light generating device). The term “light source” may (thus) in embodiments also refer to a light source that is (also) based on conversion of light, such as a light source in combination with a luminescent converter material. Hence, the term “light source” may also refer to acombination of a (diode) laser with a luminescent material configured to convert at least partof the (diode) laser radiation. In embodiments, the term “light source” may also refer to a combination of a light source, like a laser (diode), and an optical filter, which may change the spectral power distribution of the light generated by the light source. Especially, the term “light generating device” may be used to address a light source and further (optical components), like an optical filter and / or a beam shaping element, etc. 2023PF80184 32 The phrases “different light sources” or “a plurality of different light sources”, and similar phrases, may in embodiments refer to a plurality of solid-state light sources selected from at least two different bins. Likewise, the phrases “identical light sources” or “a plurality of same light sources”, and similar phrases, may in embodiments refer to a plurality of solid-state light sources selected from the same bin. The term “solid state light source”, or “solid state material light source”, and similar terms, may especially refer to semiconductor light sources, such as a diode laser. The term “laser light source” especially refers to a laser. Such laser may especially be configured to generate laser light source light having one or more wavelengths in the UV, visible, or infrared, especially having a wavelength selected from the spectral wavelength range of 200-2000 nm, such as 300-1500 nm. The term “laser” especially refers to a device that emits light through a process of optical amplification based on the stimulated emission of electromagnetic radiation. Especially, in embodiments the term “laser” may refer to a solid-state laser. In specific embodiments, the terms “laser” or “laser light source”, or similar terms, refer to a laser diode (or diode laser). Hence, in embodiments the light source comprises a laser light source. In embodiments, the terms “laser” or “solid state laser” or “solid state material laser” may refer to one or more of cerium doped lithium strontium (or calcium) aluminum fluoride (Ce:LiSAF, Ce:LiCAF), chromium doped chrysoberyl (alexandrite) laser, chromium ZnSe (Cr:ZnSe) laser, divalent samarium doped calcium fluoride (Sm:CaF2) laser, Er:YAG laser, erbium doped and erbium–ytterbium codoped glass lasers, F-Center laser, holmium YAG (Ho:YAG) laser, Nd:YAG laser, NdCrYAG laser, neodymium doped yttrium calcium oxoborate Nd:YCa4O(BO3)3 or Nd:YCOB, neodymium doped yttrium orthovanadate (Nd:YVO4) laser, neodymium glass (Nd:glass) laser, neodymium YLF (Nd:YLF) solid-state laser, promethium 147 doped phosphate glass (147Pm3+:glass) solid-state laser, ruby laser (Al2O3:Cr3+), thulium YAG (Tm:YAG) laser, titanium sapphire (Ti:sapphire; Al2O3:Ti3+) laser, trivalent uranium doped calcium fluoride (U:CaF2) solid-state laser, Ytterbium doped glass laser (rod, plate / chip, and fiber), Ytterbium YAG (Yb:YAG) laser, Yb2O3(glass or ceramics) laser, etc. For instance, including second and third harmonic generation embodiments, the light source may comprise one or more of an F center laser, an yttrium orthovanadate (Nd:YVO4) laser, a promethium 147 doped phosphate glass (147Pm3+:glass), and a titanium sapphire (Ti:sapphire; Al2O3:Ti3+) laser. For instance, considering second and third harmonic generation, such light sources may be used to generated blue light. 2023PF80184 33 In embodiments, the terms “laser” or “solid state laser” or “solid state material laser” may refer to one or more of a semiconductor laser diodes, such as GaN, InGaN, AlGaInP, AlGaAs, InGaAsP, lead salt, vertical cavity surface emitting laser (VCSEL), quantum cascade laser, hybrid silicon laser, etc. A laser may be combined with an upconverter in order to arrive at shorter (laser) wavelengths. For instance, with some (trivalent) rare earth ions upconversion may be obtained or with non-linear crystals upconversion can be obtained. Alternatively, a laser can be combined with a downconverter, such as a dye laser, to arrive at longer (laser) wavelengths. As can be derived from the below, the term “laser light source” may also refer to a plurality of (different or identical) laser light sources. In specific embodiments, the term “laser light source” may refer to a plurality N of (identical) laser light sources. In embodiments, N=2, or more. In specific embodiments, N may be at least 5, such as especially at least 8. In this way, a higher brightness may be obtained. The laser light source is configured to generate laser light source light (or “laser light”). The light source light may essentially consist of the laser light source light. The light source light may also comprise laser light source light of two or more (different or identical) laser light sources. For instance, the laser light source light of two or more (different or identical) laser light sources may be coupled into a light guide, to provide a single beam of light comprising the laser light source light of the two or more (different or identical) laser light sources. In specific embodiments, the light source light is thus especially collimated light source light. In yet further embodiments, the light source light is especially (collimated) laser light source light. The laser light source light may in embodiments comprise one or more bands, having band widths as known for lasers. In specific embodiments, the band(s) may be relatively sharp line(s), such as having full width half maximum (FWHM) in the range of less than 20 nm at RT, such as equal to or less than 10 nm. Hence, the light source light has aspectral power distribution (intensity on an energy scale as function of the wavelength) whichmay comprise one or more (narrow) bands. The beams (of light source light) may be focused or collimated beams of (laser) light source light. The term “focused” may especially refer to converging to a small spot. This small spot may be at the discrete converter region, or (slightly) upstream thereof or (slightly) downstream thereof. Especially, focusing and / or collimation may be such that the cross-sectional shape (perpendicular to the optical axis) of the beam at the discrete converter 2023PF80184 34 region (at the side face) is essentially not larger than the cross-section shape (perpendicular to the optical axis) of the discrete converter region (where the light source light irradiates thediscrete converter region). Focusing may be executed with one or more optics, like (focusing)lenses. Especially, two lenses may be applied to focus the laser light source light. Collimation may be executed with one or more (other) optics, like collimation elements, such as lenses and / or parabolic mirrors. In embodiments, the beam of (laser) light source light may be relatively highly collimated, such as in embodiments ≤2° (FWHM), more especially ≤1° (FWHM), most especially ≤0.5° (FWHM). Hence, ≤2° (FWHM) may be considered (highly) collimated light source light. Optics may be used to provide (high) collimation (see also above). The term “solid state material laser”, and similar terms, may refer to a solid state laser like based on a crystalline or glass body doped with ions, like transition metal ions and / or lanthanide ions, to a fiber laser, to a photonic crystal laser, to a semiconductor laser, such as e.g. a vertical cavity surface-emitting laser (VCSEL), etc. The term “solid state light source”, and similar terms, may especially refer to semiconductor light sources, such as a laser diode. Instead of the term “solid state light source” also the term “semiconductor- based light source” may be applied. Hence, the term “semiconductor-based light source” may e.g. refer to a laser diode. A laser diode (or diode laser) may be a semiconductor device substantially similar to a light-emitting diode in which a diode pumped directly with electrical current can create lasing conditions at the diode's junction. This is known to a person skilled in the art. The light generating system may be part of or may be applied in e.g. office lighting systems, household application systems, shop lighting systems, home lighting systems, accent lighting systems, spot lighting systems, theater lighting systems, fiber-optics application systems, projection systems, self-lit display systems, pixelated display systems, segmented display systems, warning sign systems, medical lighting application systems, indicator sign systems, decorative lighting systems, portable systems, automotive applications, (outdoor) road lighting systems, urban lighting systems, green house lighting systems, horticulture lighting, digital projection, or LCD backlighting. The light generating system (or luminaire) may be part of or may be applied in e.g. optical communication systems or disinfection systems. The terms “light” and “radiation” are herein interchangeably used, unless clear from the context that the term “light” only refers to visible light. The terms “light” and 2023PF80184 35 “radiation” may thus refer to UV radiation, visible light, and IR radiation. In specific embodiments, especially for lighting applications, the terms “light” and “radiation” refer to (at least) visible light. The terms “visible”, “visible light” or “visible emission” and similar terms refer to light having one or more wavelengths in the range of about 380-780 nm. Herein, UV may especially refer to a wavelength selected from the range of 190-380 nm, such as 200-380 nm. The terms “blue light” or “blue emission”, and similar terms, may especially relate to light having a wavelength in the range of about 440-490 nm (including some violet and cyan hues). In specific embodiments, the blue light may have a centroid wavelength in the 440-490 nm range. The terms “green light” or “green emission”, and similar terms, may especially relate to light having a wavelength in the range of about 490-560 nm. In specific embodiments, the green light may have a centroid wavelength in the 490-560 nm range. The terms “yellow light” or “yellow emission”, and similar terms, may especially relate to light having a wavelength in the range of about 560-590 nm. In specific embodiments, the yellow light may have a centroid wavelength in the 560-590 nm range. The terms “red light” or “red emission”, and similar terms, may especially relate to light having a wavelength in the range of about 620-750 nm. In specific embodiments, the red light may have a centroid wavelength in the 620-750 nm range. The phrase “light having one or more wavelengths in a wavelength range” and similar phrases may especially indicate that the indicated light (or radiation) has a spectral power distribution with at least intensity or intensities at these one or more wavelengths in the indicate wavelength range. For instance, a blue emitting solid state light source will have a spectral power distribution with intensities at one or more wavelengths in the 440-495 nm wavelength range. In yet a further aspect, the invention also provides a lamp or a luminaire comprising the light generating system as defined herein. The luminaire may further comprise a housing, optical elements, louvres, etc. etc... The lamp or luminaire may further comprise a housing enclosing the light generating system. The lamp or luminaire may comprise a light window in the housing or a housing opening, through which the system light may escape from the housing. In yet a further aspect, the invention also provides a projection device comprising the light generating system as defined herein. Especially, a projection device or “projector” or “image projector” may be an optical device that projects an image (or moving images) onto a surface, such as e.g. a projection screen. The projection devicemay include one or more light generating systems such as described herein. The lightingdevice may also be an entertainment lighting fixture for beam, spot and / or wash applications. 2023PF80184 36 The lighting device may also be a stadium lighting device. The lighting device may also be an automotive lighting device, such as a headlamp (or headlight) of a motorized vehicle (like a car, a truck, a bus, a coach, a tractor, a boat, an airplane, etc.). Hence, in an aspect the invention also provides a lighting device selected from the group of a lamp, a luminaire, a projector device, a disinfection device, a photochemical reactor, an automotive lighting device, and an optical wireless communication device, comprising the light generating system as defined herein. The lighting device may comprise a housing or a carrier, configured to house or support, one or more elements of the light generating system. For instance, in embodiments the lighting device may comprise a housing or a carrier, configured to house or support, e.g., the light generating system. Instead of the terms “lighting device” or “lighting system”, and similar terms, also the terms “light generating device” or “light generating system”, (and similar terms), may be applied. A lighting device or a lighting system may be configured to generate device light (or “lighting device light”) or system light (“or lighting system light”). As indicated above, the terms light and radiation may interchangeably be used. BRIEF DESCRIPTION OF THE DRAWINGS Embodiments of the invention will now be described, by way of example only, with reference to the accompanying schematic drawings in which corresponding reference symbols indicate corresponding parts, and in which: Figs.1-2 schematically depict embodiments of the light generating system. Fig.3 schematically depicts spectral power distributions of light in embodiments of the light generating system. Fig.4 schematically depicts luminous flux and CCT values for embodiments of the light generating system. Fig.5 schematically depicts embodiments of applications of the light generating system. The schematic drawings are not necessarily to scale. DETAILED DESCRIPTION OF THE EMBODIMENTS Fig.1 schematically depicts a top view of a light generating system 1000 comprising a multi-chip laser package 2000, a luminescent material 200, and optics 500 (see Fig.2A). 2023PF80184 37 In embodiments, the multi-chip laser package 2000 may comprise a first series 51 of first solid state laser devices 110, configured to generate first laser light 111 (see Fig. 2A) having a first peak wavelength (λp1). Additionally, in embodiments, the multi-chip laser package 2000 may comprise a second series 52 of second solid state laser devices 120 configured to generate second laser light 121 (see Fig.2A) having a second peak wavelength (λp2). In embodiments, the light generating system may especially comprise n1 first solid state laser devices 110 and n2 second solid state laser devices 120. Especially, in embodiments, 0.25 ≤ n1 / n2 ≤ 4. More especially, in embodiments, 1≤ n1 / n2 ≤ 7. As depicted here, in embodiments, the light generating system 1000 may comprise more first solid state laser devices 110 than second solid state laser devices 120, i.e., n1>n2. Additionally, in embodiments, the multi-chip laser package 2000 may comprise a third series 53 of third solid state laser devices 130 configured to generate third laser light 131 (see Fig.2A) having a third peak wavelength (λp3). Especially, in embodiments, the first peak wavelength (λp1) and the second peak wavelength (λp2) may be independently selected from the wavelength range of 440-490 nm, and the third peak wavelength (λp3) may be selected from the range of 590-780 nm. Moreover, in embodiments, the multi-chip laser package 2000 may further comprise a support 2300 configured to support (and ensure good thermal management of) the solid state laser devices 110, 120, 130,… As depicted here, the support 2300 is especially configured to support first, second, third, fourth, and fifth solid state laser devices 110, 120, 130, 140, 150, see also further below. Furthermore, in embodiments, the luminescent material 200 may be configured in a transmissive mode downstream of the first solid state laser devices 110. Especially, in embodiments, the luminescent material 200 may be configured in a light- receiving relationship with the first solid state laser devices 110. More especially, in embodiments, the luminescent material 200 may be configured to convert at least part of the first laser light 111 into luminescent material light 201 (see Fig.2A) having one or more wavelengths in the wavelength range of 490-590 nm and having a centroid wavelength (λcL).Especially, in embodiments, λcL ≥ λp1+15 nm, λcL ≥ λp2+15 nm, and λcL ≤ λp3 - 15 nm.In further embodiments, the luminescent material 200 and (at least) the second solid state laser devices 120 may be configured such that during operation of the second solid state laser devices 120 (and optionally the other solid state laser devices) (at least) the second laser light 121 bypasses the luminescent material 200. Furthermore, in embodiments, |λp1- λp2| ≤ 15 nm. 2023PF80184 38 Additionally or alternatively, in another aspect of the invention the luminescent material 200 may be configured in a transmissive mode downstream of essentially all of the blue solid state laser devices, i.e., downstream of the first solid state laser devices 110 and the second solid state laser devices 120. Yet further, in embodiments, the luminescent material 200 may be configured in a transmissive mode downstream of essentially all of the solid state laser devices, i.e., downstream of the first solid state laser devices 110, the second solid state laser devices 120, the third solid state laser devices 130, the optional fourth solid state laser devices 140, and the optional fifth solid state laser devices 150. Especially, the light generating system 1000 may be configured to provide in a first operational mode of the light generating system 1000 white system light 1001 comprising the luminescent material light 201, the second laser light 121, and the third laser light 131. Especially, the optics 500 may be configured to one or more of (a) mix different light contributions to the system light 1001, and (b) beam shape the system light 1001. In further embodiments, as depicted here, the multi-chip laser package 2000 may comprise a fourth series 54 of fourth solid state laser devices 140 configured to generate fourth laser light 141 (see Fig.3) having a fourth peak wavelength (λp4) selected from the wavelength range of 490-590 nm. In further embodiments, λp4≥ λp1+15 nm, λp4≥ λp2+15 nm,and λp4 ≤ λp3 - 15 nm. Moreover, in embodiments, the light generating system 1000 may beconfigured to provide in the first operational mode of the light generating system 1001 white system light 1001 comprising the luminescent material light 201, the second laser light 121, the third laser light 131, and the fourth laser light 141. In embodiments, the light generating system 1000 may comprise n4 fourth solid state laser devices 140. Especially, in embodiments, (0.1 ≤ (n4) / (n1+n2) ≤ 8, more especially) 0.1 ≤ (n4) / (n1+n2) ≤ 5. As depicted here, in embodiments, the light generating system 1000 may comprise an equal amount of green (i.e. fourth) solid state laser devices 140 as the amount of blue (i.e., first and second) solid state laser devices 110,120 together, i.e., n4 / (n1+n2)=1. In yet further embodiments, as depicted here, the multi-chip laser package 2000 may comprise a fifth series 55 of fifth solid state laser devices 150 configured to generate fifth laser light 151 (see Fig.3) having a fifth peak wavelength (λp5) selected from the range of 590-780 nm. Furthermore, in embodiments, λp5≥ λp4+15 nm and 0 nm ≤ | λp3-λp5| ≤ 75 nm. In embodiments, the light generating system 1000 may comprise n3 third solid state laser devices 130 and optionally n5 fifth solid state laser devices 150. Especially, (0.1 ≤ (n3+n5) / (n1+n2) ≤ 15, more especially) 0.2 ≤ (n3+n5) / (n1+n2) ≤ 5. For example, as depicted 2023PF80184 39 here, in embodiments, the light generating system 1000 may comprise double the amount of red (i.e. both third and fifth) solid state laser devices 130,150 as blue (i.e. both first and second) solid state laser devices 110,120, i.e., (n3+n5) / (n1+n2)=2. In embodiments, the light generating system 1000 may further comprise a control system 300. Especially, in embodiments, the control system 300 may be configured to control a spectral power distribution of the system light 1001 by controlling the solid state laser devices 110,120,130,…. Additionally or alternatively, in embodiments, the control system 300 may be configured to control a spectral power distribution of the system light 1001 by individually controlling the series 51,52,53,… of solid state laser devices 110,120,130,…. Further, in embodiments, the multi-chip laser package 2000 may comprise a plurality of channels 50. Especially, in embodiments, a first channel may comprise the first series 51 and the second series 52. Further, in embodiments, a second channel may comprise the third series 53 (and optionally the fifth series 55, not depicted here). Further, as depicted, in embodiments, the multi-chip laser package 2000 may comprise a channel 50 comprising the fourth series 54 and another channel 50 comprising the fifth series 55. In such embodiments, the control system 300 may be configured to control a spectral power distribution of the system light 1001 by individually controlling the channels 50. Fig.2 schematically depicts cross-sectional views of the light generating system 1000. Figs.2B and 2C schematically depict the light generating system 1000 where the luminescent material 200 is configured at a first distance d1 from the first solid state laser devices 110. Especially, as depicted here in embodiments, the luminescent material 200 may be configured remote from, but at close proximity to the first solid state laser devices 110. Especially, in such embodiments, the first distance d1 may be selected from the range of 0 µm ≤ d1 ≤ 100 µm. More especially, in embodiments, the luminescent material 200 may be configured such that d1≥1 µm, like d1≥5 µm, such as d1≥10 µm, especially d1≥15 µm. Hence, Figs.2B and 2C schematically depict the light generating system 1000 where the luminescent material 200 is configured downstream of the solid state laser devices, but upstream of the optics 500, especially of a subset of lenses 510. Hence, in embodiments, the optics 500 may comprise a plurality of lenses 510. Especially, downstream of each solid state laser device 110,120,130,… a lens 510 may be configured. In such embodiments, the light generating system 1000 (especially the optics 500) may further comprise one or more of anauxiliary lens 580, light mixing element 530, a double-sided micro-lens array, an engineered(top-hat) diffuser, and a(n apertured) light exit 1090. For example, in embodiments as 2023PF80184 40 depicted in Fig.2B, the luminescent material 200 may be coated with a low-pass filter on the phosphor face facing the lasers (not depicted), and downstream of the luminescent material 200 may consecutively be configured: the plurality of lenses 510 (especially in a micro-lens array), the auxiliary lens 580, and the light mixing element 530. In other embodiments, as depicted in Fig.2C, downstream of the luminescent material 200 (and hence also the solid state laser devices) may consecutively be configured: a first collimator 560, the plurality of lenses 510 (especially in a double-sided micro-lens array or engineered diffuser), the auxiliary lens 580, and the light exit 1090 comprising an aperture. The first collimator 560 may, in embodiments, be configured to collimate the laser light and the luminescent material light prior to light mixing and beam shaping by the optics 500. Such a first collimator 560 may also be applied in embodiments such as depicted in Fig.2D, see also below. Conversely, Fig.2A schematically depicts an embodiment where the luminescent material 200 may be configured downstream of both the subset of the lenses 510 and the first solid state laser devices 110. Hence, in yet other embodiments, the luminescent material 200 may be configured (substantially) remote from the first solid state laser devices 110. Especially, in embodiments, the luminescent material 200 may be configured downstream of both the solid state laser devices 110,120,130,… and the lenses 510. Hence, in such embodiments, the first distance d1 may be relatively large, such as e.g. d1≥1 mm, like d1≥3 mm. Here, also, the optics 500 may comprise the plurality of lenses 510. However, in such embodiments, such as depicted in Figs.2D and 2E, the optics 500 may further comprise a light focusing arrangement 520, a thermally conductive body 540, and collimator 550. Especially, in embodiments, the thermally conductive body 540 may comprise the luminescent material 200. Optionally, such as depicted here, the thermally conductive body 540 may further comprise a transmissive diffuser 545. The transmissive diffuser 545 and the luminescent material 200 may especially be (embedded in and) configured adjacent to (e.g. next to or in concentric rings relative to) each other on (or in) the thermally conductive body 540. The light focusing arrangement 520 may, in embodiments, be configured downstream of the solid state laser devices 110,120,130,…. Especially, in embodiments, the light focusing arrangement 520 may be configured to focus first laser light 111 onto the luminescent material 200. Additionally, in embodiments, the light focusing arrangement 520 may optionally focus second laser light 121 and third laser light 131 (and optionally fourth and / or fifth laser light 141,151) onto the diffuser 545. Therefore, in embodiments, the light focusing arrangement may comprise one or more of (i) a Fresnel lens (see Fig.2D), (ii) an 2023PF80184 41 engineered transmissive diffuser (see fig.2E) (with a batwing or donut-like internal distribution), and (iii) a supplemental lens (see Fig.2E). Yet further, in embodiments, the collimator 550 may be configured downstream of the thermally conductive body 540. In embodiments, the collimator 550 may be configured to one or more of collimate, mix, and beam shape the second laser light 121, third laser light 131, luminescent material light 200(, and optionally fourth and fifth laser light 141,151). Therefore, in embodiments, the collimator 550 may e.g. comprise a total internal reflection (TIR) collimator. Fig.3 schematically depicts a spectral power distribution of the system light 1001. The schematic depiction further indicates the contributions of the different types of light sources, especially, the first laser light 111, the second laser light 121, the third laser light 131, the fourth laser light 141, the fifth laser light 151, and the luminescent material light 201. In specific embodiments, the first peak wavelength (λp1) may be selected from the range of 450-480 nm. Further, in such embodiments, the second peak wavelength (λp2) may be selected from the range of 450-480 nm. Yet further, in such embodiments, the third peak wavelength (λp3) may be selected from the range of 620-680 nm. Yet further, in such embodiments, the fourth peak wavelength (λp4) may be selected from the range of 510-550 nm. Yet further, in such embodiments, the fifth peak wavelength (λp5) may be selected from the range of 620-680 nm. As indicated above, in embodiments, in the first operational mode the system light 1001 may be white light. Alternatively, in embodiments, in a second operational mode of the light generating system 1000 the system light 1001 may be colored light. Fig.4 schematically depicts the maximum achievable luminous flux (Lm) for obtaining CRI >70 and different CCTs when using the light generating system 1000 as depicted in Fig.1, i.e., when using the (red) third series 53 and fifth series 55, the (green) fourth series 54, and the (blue) second series 52 are used in combination with the phosphor converted (yellow and / or green) first series 51. As can be deducted from the CCT values plotted in Fig.4, in embodiments, the control system 300 may be configured to control in the first operational mode the correlated color temperature of the system light 1001 between 2200-9000 K, especially between 3000-8000 K, and a color rendering index of the system light 1001 of at least 70. Fig.5 schematically depicts an embodiment of a luminaire 2 comprising the light generating system 1000 as described above. Reference 301 indicates a user interface 2023PF80184 42 which may be functionally coupled with the control system 300 comprised by or functionally coupled to the light generating system 1000. Fig.5 also schematically depicts an embodiment of lamp 1 comprising the light generating system 1000. Reference 3 indicates a projector device or projector system, which may be used to project images, such as at a wall, which may also comprise the light generating system 1000. Hence, Fig.5 schematically depicts embodiments of a lighting device 1200 selected from the group of a lamp 1, a luminaire 2, a projector device 3, a disinfection device, a photochemical reactor, and an optical wireless communication device, comprising the light generating system 1000 as described herein. In embodiments, such lighting device may be a lamp 1, a luminaire 2, a projector device 3, a disinfection device, or an optical wireless communication device. Lighting device light escaping from the lighting device 1200 is indicated with reference 1201. Lighting device light 1201 may essentially consist of system light 1001, and may in specific embodiments thus be system light 1001. Reference 1300 refers to a space, such as a room. Reference 1305 refers to a floor and reference 1310 to a ceiling; reference 1307 refers to a wall. The term “plurality” refers to two or more. The terms “substantially” or “essentially” herein, and similar terms, will be understood by the person skilled in the art. The terms “substantially” or “essentially” may also include embodiments with “entirely”, “completely”, “all”, etc. Hence, in embodiments the adjective substantially or essentially may also be removed. Where applicable, the term “substantially” or the term “essentially” may also relate to 90% or higher, such as 95% or higher, especially 99% or higher, even more especially 99.5% or higher, including 100%. The term “comprise” also includes embodiments wherein the term “comprises” means “consists of”. The term “and / or” especially relates to one or more of the items mentioned before and after “and / or”. For instance, a phrase “item 1 and / or item 2” and similar phrases may relate to one or more of item 1 and item 2. The term "comprising" may in an embodiment refer to "consisting of" but may in another embodiment also refer to "containing at least the defined species and optionally one or more other species". Furthermore, the terms first, second, third and the like in the description and in the claims, are used for distinguishing between similar elements and not necessarily for describing a sequential or chronological order. It is to be understood that the terms so used are interchangeable under appropriate circumstances and that the embodiments of the invention described herein are capable of operation in other sequences than described or illustrated herein. 2023PF80184 43 The devices, apparatus, or systems may herein amongst others be described during operation. As will be clear to the person skilled in the art, the invention is not limited to methods of operation, or devices, apparatus, or systems in operation. It should be noted that the above-mentioned embodiments illustrate rather than limit the invention, and that those skilled in the art will be able to design many alternative embodiments without departing from the scope of the appended claims. In the claims, any reference signs placed between parentheses shall not be construed as limiting the claim. Use of the verb "to comprise" and its conjugations does not exclude the presence of elements or steps other than those stated in a claim. Unless the context clearly requires otherwise, throughout the description and the claims, the words “comprise”, “comprising”, and the like are to be construed in an inclusive sense as opposed to an exclusive or exhaustive sense; that is to say, in the sense of “including, but not limited to”. The article "a" or "an" preceding an element does not exclude the presence of a plurality of such elements. The invention may be implemented by means of hardware comprising several distinct elements, and by means of a suitably programmed computer. In a device claim, or an apparatus claim, or a system claim, enumerating several means, several of these means may be embodied by one and the same item of hardware. The mere fact that certain measures are recited in mutually different dependent claims does not indicate that a combination of these measures cannot be used to advantage. The invention also provides a control system that may control the device, apparatus, or system, or that may execute the herein described method or process. Yet further, the invention also provides a computer program product, when running on a computer which is functionally coupled to or comprised by the device, apparatus, or system, controls one or more controllable elements of such device, apparatus, or system. The invention further applies to a device, apparatus, or system comprising one or more of the characterizing features described in the description and / or shown in the attached drawings. The invention further pertains to a method or process comprising one or more of the characterizing features described in the description and / or shown in the attached drawings. The various aspects discussed in this patent can be combined in order to provide additional advantages. Further, the person skilled in the art will understand that 2023PF80184 44 embodiments can be combined, and that also more than two embodiments can be combined. Furthermore, some of the features can form the basis for one or more divisional applications.

Claims

2023PF80184 45 CLAIMS:

1. A light generating system (1000) comprising a multi-chip laser package(2000), a luminescent material (200), and optics (500), wherein:- the multi-chip laser package (2000) comprises (i) a first series (51) of firstsolid state laser devices (110), configured to generate first laser light (111) having a first peak wavelength (λp1), (ii) a second series (52) of second solid state laser devices (120) configured to generate second laser light (121) having a second peak wavelength (λp2), and (iii) a third series (53) of third solid state laser devices (130) configured to generate third laser light (131) having a third peak wavelength (λp3); wherein the multi-chip laser package (2000) further comprises a support (2300) configured to support the solid state laser devices (110, 120, 130,...);- the first peak wavelength (λp1) and the second peak wavelength (λp2) areindependently selected from the wavelength range of 440-490 nm, and the third peak wavelength (λp3) is selected from the range of 590-780 nm;- the luminescent material (200) is configured in a transmissive modedownstream of the first solid state laser devices (110) and is configured to convert at least part of the first laser light (111) into luminescent material light (201) having one or more wavelengths in the wavelength range of 490-590 nm and having a centroid wavelength (λcL);wherein λcL ≥ λp1+15 nm, λcL ≥ λp2+15 nm, and λcL ≤ λp3 - 15 nm;- the luminescent material (200), the second solid state laser devices (120) andthe third solid state laser devices (130) are configured such that during operation of thesecond solid state laser devices (120) and the third solid state laser devices (130), the secondlaser light (121) and the third laser light (131) bypass the luminescent material (200);- the optics (500) are configured to one or more of (a) mix different lightcontributions to the system light (1001), and (b) beam shape the system light (1001);- the multi-chip laser package (2000) further comprises a fourth series (54) offourth solid state laser devices (140) configured to generate fourth laser light (141) having a fourth peak wavelength (λp4) selected from the wavelength range of 490-590 nm; andwherein λp4 ≥ λp1+15 nm, λp4 ≥ λp2+15 nm, and λp4 ≤ λp3 - 15 nm;2023PF80184 46- the luminescent material (200) and the fourth solid state laser devices (140)are configured such that during operation of the fourth solid state laser devices (140) thefourth laser light (141) bypasses the luminescent material (200); and- the light generating system (1000) is configured to provide in the firstoperational mode of the light generating system (1001) white system light (1001) comprising the luminescent material light (201), the second laser light (121), the third laser light (131), and the fourth laser light (141).

2. The light generating system (1000) according to any one of the precedingclaims, wherein |λp1-λp2| ≤ 20 nm.

3. The light generating system (1000) according to any one of the precedingclaims, whereinnm.

4. The light generating system (1000) according to any one of the precedingclaims, wherein the multi-chip laser package (2000) comprises a fifth series (55) of fifth solid state laser devices (150) configured to generate fifth laser light (151) having a fifth peak wavelength (λp5) selected from the range of 590-780 nm; wherein λp5≥ λp4+15 nm and 0 nm ≤ |λp3-λp5| ≤ 75 nm; wherein the light generating system (1000) is configured to provide in the first operational mode of the light generating system (1001) white system light (1001) comprising the luminescent material light (201), the second laser light (121), the third laser light (131), the fifth laser light (151), and optionally the fourth laser light (141) according to claim 3.

5. The light generating system (1000) according to any one of the precedingclaims, wherein:- the first peak wavelength (λp1) is selected from the range of 450-480 nm;- the second peak wavelength (λp2) is selected from the range of 450-480 nm;- the third peak wavelength (λp3) is selected from the range of 620-680 nm;- the fourth peak wavelength (λp4) according to claim 3 is selected from therange of 510-550 nm; and- the fifth peak wavelength (λp5) according to claim 4 is selected from the rangeof 620-680 nm.2023PF80184 476. The light generating system (1000) according to any one of the precedingclaims, further comprising a control system (300), wherein the control system (300) is configured to control a spectral power distribution of the system light (1001) by controlling the solid state laser devices (110,120,130, ....).

7. The light generating system (1000) according to claim 6, wherein the controlsystem (300) is configured to control a spectral power distribution of the system light (1001) by individually controlling the series (51,52,53,…) of solid state laser devices (110,120,130, ....).

8. The light generating system (1000) according to claim 6, wherein the multi-chip laser package (2000) comprises a plurality of channels (50), wherein a first channel comprises the first series (51) and the second series (52), and wherein a second channel comprises the third series (53); and wherein the control system (300) is configured to control a spectral power distribution of the system light (1001) by individually controlling the channels (50).

9. The light generating system (1000) according to any one of the precedingclaims 6-8, wherein the control system (300) is configured to control in the first operational mode the correlated color temperature of the system light (1001) between 2200-9000 K and a color rendering index of the system light (1001) of at least 70.

10. The light generating system (1000) according to any one of the precedingclaims, comprising n1 first solid state laser devices (110) and n2 second solid state laser devices (120), wherein 1 ≤ n1 / n2 ≤ 7.

11. The light generating system (1000) according to claim 10, comprising n3 thirdsolid state laser devices (130) and optionally n5 fifth solid state laser devices (150), wherein 0.2 ≤ (n3+n5) / (n1+n2) ≤ 5.

12. The light generating system (1000) according to claim to any one of claims10-11, and according to claim 3, comprising n4 fourth solid state laser devices (140), wherein 0.1 ≤ (n4) / (n1+n2) ≤ 5.2023PF80184 4813. The light generating system (1000) according to any one of the precedingclaims, wherein the optics (500) comprise a plurality of lenses (510), wherein downstream of each solid state laser device (110,120,130) a lens (510) is configured, and wherein upstream of a subset of the lenses (510) and downstream of the first solid state laser devices (110) the luminescent material (200) is configured.

14. The light generating system (1000) according to any one of the precedingclaims, wherein the optics (500) comprise a light focusing arrangement (520), a thermally conductive body (540) comprising the luminescent material (200), and a collimator (550), wherein the light focusing arrangement (520) is configured downstream of the solid state laser devices (110,120,130) and upstream of the thermally conductive body (540), wherein the light focusing arrangement (520) is configured to focus first laser light (111) onto theluminescent material (200), and wherein the collimator (550) is configured downstream ofthe thermally conductive body (540).

15. A lighting device (1200) selected from the group of a lamp (1), a luminaire(2), a projector device (3), a disinfection device, a photochemical reactor, an automotive lighting device, and an optical wireless communication device, comprising the light generating system (1000) according to any one of the preceding claims.

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