Optoelectronic device

Abstract

An optoelectronic device comprises an optoelectronic semiconductor chip having an emission surface, and an optical resonator, which is located above the emission surface. The optoelectronic semiconductor chip has an emission spectrum with a peak wavelength. The optical resonator has a transmission spectrum, which has a transmission maximum at a resonant wavelength that depends on a transmission angle.

Description

[0001] OPTOELECTRONIC COMPONENT

[0002] DESCRIPTION

[0003] The present invention relates to an optoelectronic component.

[0004] This patent application claims priority from German patent application 10 2024 100 578 . 5 , the disclosure of which is hereby incorporated by reference.

[0005] Optoelectronic components with light-emitting semiconductor chips are known from the state of the art. In known optoelectronic components, the semiconductor chips emit light with a largely uniform spectral composition across all solid angle ranges.

[0006] One object of the present invention is to provide an optoelectronic component. This object is achieved by an optoelectronic component having the features of claim 1. Various further developments are specified in the dependent claims.

[0007] An optoelectronic component comprises an optoelectronic semiconductor chip with an emission surface and an optical resonator arranged above the emission surface. The optoelectronic semiconductor chip has an emission spectrum with a peak wavelength. The optical resonator has a transmission spectrum with a transmission maximum at a resonance wavelength dependent on a transmission angle.

[0008] In this optoelectronic component, the optical resonator can cause different spectral components of the light emitted by the optoelectronic semiconductor chip to be emitted into different solid angle ranges. The optoelectronic component thus exhibits a pronounced solid angle-wavelength correlation. In one embodiment of the optoelectronic component, the resonance wavelength at a transmission angle of 0° is greater than the peak wavelength. This has the consequence that predominantly only long-wave components of the emission spectrum of the optoelectronic semiconductor chip are emitted by the optoelectronic component in the vertical direction.

[0009] In one embodiment of the optoelectronic component, the resonance wavelength at a transmission angle of 0° is at a wavelength at which the emission spectrum has an intensity of less than 10% of the intensity at the peak wavelength. In this case, the optoelectronic component emits only light of low intensity in the vertical direction.

[0010] The resonance wavelength corresponds to the peak wavelength at a transmission angle between 20° and 70°, in particular at a transmission angle between 40° and 50° or at a transmission angle between 20° and 30°. This has the consequence that light emitted by the optoelectronic semiconductor chip with the peak wavelength of the emission spectrum is radiated by the optoelectronic component predominantly at a transmission angle between 20° and 70°, for example with a transmission angle between 40° and 50° or a transmission angle between 20° and 30°. This makes it possible to restrict the radiation of a large proportion of the light emitted by the optoelectronic semiconductor chip to a desired solid angle range.

[0011] In one embodiment of the optoelectronic component, the optical resonator comprises a material arranged between two mirrors, which material has a refractive index between 1.5 and 3. The choice of the refractive index of the material enables the dependence of the resonance wavelength of the optical resonator on the transmission angle to be configured. In one embodiment of the optoelectronic component, the mirrors are designed as Bragg mirrors. Advantageously, the mirrors can therefore have a high quality factor.

[0012] In one embodiment of the optoelectronic component, the optical resonator is adjacent to an optical medium, so that light transmitted by the optical resonator enters the optical medium. Light whose transmission angle is greater than a critical angle is totally reflected at an exit surface of the optical medium. At a transmission angle that corresponds to the critical angle, the resonance wavelength corresponds to a specified cut-off wavelength. In this optoelectronic component, portions of the emission spectrum emitted by the optoelectronic semiconductor chip with a wavelength that is shorter than the cut-off wavelength are totally reflected at the exit surface of the optical medium and thus cannot leave the optical medium.This ensures that the optoelectronic component essentially only emits light components whose wavelength is longer than the specified cutoff wavelength .

[0013] In one embodiment of the optoelectronic component, the cutoff wavelength is shorter than the peak wavelength. This ensures that a predominant portion of the light emitted by the optoelectronic semiconductor chip can be radiated by the optoelectronic component.

[0014] In one embodiment of the optoelectronic component, the cutoff wavelength lies between 900 nm and 920 nm. This ensures that visible components of the emission spectrum emitted by the optoelectronic semiconductor chip are essentially not emitted by the optoelectronic component.

[0015] One embodiment of the optoelectronic component has a first detector element with a first detection surface. The first detector element is designed to detect only light from a first sub-range of the emission spectrum of the optoelectronic semiconductor chip. Advantageously, with this optoelectronic component, it is known into which solid angle range the optoelectronic component emits the light detectable by the first detector element from the first sub-range of the emission spectrum. As a result, with the optoelectronic component, it is also known from which solid angle range the light detected by the first detector element originates. The optoelectronic component can thus enable a solid angle-resolved measurement.

[0016] In one embodiment of the optoelectronic component, the emission surface of the optoelectronic semiconductor chip and the first detection surface are arranged laterally adjacent to one another. This makes it known in the optoelectronic component in which spatial region the light detected by the first detector element has been reflected.

[0017] One embodiment of the optoelectronic component has a second detector element with a second detection area. The second detector element is designed to detect only light from a second sub-range of the emission spectrum of the optoelectronic semiconductor chip. The second sub-range is different from the first sub-range. With this optoelectronic component, it is known into which solid angle range light with a wavelength from the second sub-range of the emission spectrum is predominantly emitted. As a result, with this optoelectronic component, it is also known from which solid angle range the light detected by the second detector element predominantly comes. As a result, this optoelectronic component enables measurement with particularly good solid angle resolution.

[0018] In one embodiment of the optoelectronic component, the first detection surface and the second detection surface are arranged laterally adjacent to one another. This allows the first detector element and the second detector element to detect light scattered in different spatial regions. The optoelectronic component thus enables spatially resolved measurements.

[0019] One embodiment of the optoelectronic component is intended to detect a vital function of a living being. The optoelectronic component can, for example, be designed to record a photoplethysmogram. The spatial resolution enabled by the optoelectronic component can enable particularly precise measurements.

[0020] The above-described properties, features and advantages of this invention, as well as the manner in which they are achieved, will become clearer and more clearly understandable in connection with the following description of the embodiments, which are explained in more detail in connection with the drawings. In each case, a schematic representation shows

[0021] Fig. 1 is a sectional side view of an optoelectronic component comprising an optoelectronic semiconductor chip and an optical resonator;

[0022] Fig. 2 shows an emission spectrum of the optoelectronic semiconductor chip;

[0023] Fig. 3 shows a transmission spectrum of the optical resonator;

[0024] Fig. 4 shows a resonance wavelength profile of the transmission spectrum of the optical resonator;

[0025] Fig. 5 shows a superposition of the emission spectrum and the resonance wavelength curve;

[0026] Fig. 6 shows a variant of the optoelectronic component with several detector elements; Fig. 7 shows a variant of the optoelectronic component with an optical medium; and

[0027] Fig . 8 shows a cutoff wavelength determined by total reflection in the variant of Fig . 7 .

[0028] Fig. 1 shows a schematic sectional side view of a first variant of an optoelectronic component 10. The optoelectronic component 10 is designed to emit light (electromagnetic radiation) with a pronounced solid angle-wavelength correlation.

[0029] The optoelectronic component 10 comprises an optoelectronic semiconductor chip 100 with an emission surface 110. The optoelectronic semiconductor chip 100 is configured to emit light at its emission surface 110. The optoelectronic semiconductor chip 100 can be, for example, a light-emitting diode (LED) chip.

[0030] The light emitted by the optoelectronic semiconductor chip 100 has an emission spectrum 150, schematically illustrated in Fig. 2. The emission spectrum 150 indicates an intensity 170 of the emitted light as a function of a wavelength 160 of the emitted light. The emission spectrum 150 has an intensity maximum (peak) at a peak wavelength 165.

[0031] Light emitted by the optoelectronic semiconductor chip 100 emerges at the emission surface 110 at different solid angles. The emission spectrum 150 of the optoelectronic semiconductor chip 100 is largely solid angle isotropic. The light emitted at different solid angles always has a largely identical spectral composition.

[0032] The optoelectronic component 10 shown in Fig. 1 has an optical resonator 200 with an input side 201 and an output side 202 opposite the input side 201. The optical resonator 200 is arranged above or on the emission surface 110 of the optoelectronic semiconductor chip 100, wherein the input side 201 of the optical resonator 200 faces the emission surface 110. It is expedient if the input side 201 of the optical resonator 200 adjoins the emission surface 110 directly or via a fastening layer. It is also expedient for the input side 201 of the optical resonator 200 to be at least as large as the emission surface 110 of the optoelectronic semiconductor chip 100, so that the input side 201 completely covers the emission surface 110.

[0033] The optical resonator 200 can initially be manufactured independently of the optoelectronic semiconductor chip 100 and subsequently arranged on the emission surface 110 of the optoelectronic semiconductor chip 100. This can be done after the dicing of the optoelectronic semiconductor chip 100 or already in the wafer assembly of the optoelectronic semiconductor chip 100. Alternatively, the optical resonator can also be manufactured directly on the emission surface 110 of the optoelectronic semiconductor chip 100.

[0034] The optical resonator 200 has a material 210 arranged between two mirrors 220. One of the mirrors 220 is formed on the input side 201 of the optical resonator 200, and the other mirror 220 is arranged on the output side 202 of the optical resonator 200. The mirrors 220 can be designed, for example, as Bragg mirrors and have a plurality of layers of different materials. The material 210 of the optical resonator 200 arranged between the mirrors 220 has a fixed refractive index, which can be, for example, between 1.5 and 3.

[0035] Light emerging from the optoelectronic semiconductor chip 100 at the emission surface 110 enters the optical resonator 200 at the input side 201. In the optical resonator 200, the light can be reflected multiple times by the mirrors 220. At least a portion of the light entering the optical resonator 200 at the input side 201 can exit at the output side 202 of the optical resonator 200 and is emitted by the optoelectronic component 10.

[0036] The optical resonator 200 has a transmission spectrum 250, shown schematically in Fig. 3. The transmission spectrum 250 indicates a transmittance 270 that is dependent on the wavelength 160 of the light. The transmission spectrum 250 has a transmission maximum 275 at a resonance wavelength 265. This means that the optical resonator 200 transmits light of the resonance wavelength 265 with a high transmittance 270, while light of other wavelengths 160 is essentially reflected by the optical resonator 200. Light transmitted by the optical resonator 200 can exit the optical resonator 200 at the output side 202.

[0037] The resonance wavelength 265, i.e., the position of the transmission maximum 275, depends on a transmission angle 230 shown in Fig. 1. The transmission angle 230 indicates the angle of the light emitted at the output side 202 of the optical resonator 200 relative to a perpendicular direction.

[0038] The dependence of the resonance wavelength 265 of the optical resonator 200 on the transmission angle 230 is schematically illustrated in Fig. 4 using several resonance wavelength curves 280. The horizontal axis shows the transmission angle 230, while the resonance wavelength 265 is plotted on the vertical axis. The different resonance wavelength curves 280 apply to different refractive indices of the material 210 of the optical resonator 200. A value of 1.5 of the refractive index of the material 210 of the optical resonator 200 results in a first resonance wavelength profile 280, 281, a value of 1.7 results in a second resonance wavelength profile 280, 282, a value of 2.0 results in a third resonance wavelength profile 280, 283, a value of 2.2 results in a fourth resonance wavelength profile 280, 284, and a value of 2.4 results in a fifth resonance wavelength profile 280, 285.

[0039] For each of the resonance wavelength curves 280, the resonance wavelength 265 of the transmission spectrum 250 of the optical resonator 200 decreases with increasing transmission angle 230. The degree of the decrease depends on the refractive index of the material 210 of the optical resonator 200.

[0040] From the resonance wavelength curves shown in Fig. 4, it can be seen that the optical resonator 200, at different transmission angles 230, predominantly transmits light of a specific wavelength 160, namely predominantly light with the resonance wavelength 265 dependent on the transmission angle 230. The light transmitted by the optical resonator 200 has a shorter wavelength 160 at a larger transmission angle 230.

[0041] The solid angle selectivity of the optical resonator 200 depends on the quality factor (Q factor) of the optical resonator 200. The higher the quality factor of the optical resonator 200, the narrower the wavelength range transmitted at a specific transmission angle 230. A high quality factor thus enables a strong solid angle separation of the wavelength components. A lower quality factor means a less sharp separation of the wavelength components.

[0042] Fig. 5 shows a schematic representation of a combination of the graphs in Figs. 2 and 4. The wavelength 160 of the light emitted by the optoelectronic semiconductor chip 100 and the resonance wavelength 265 of the optical resonator 200 are plotted congruently on the horizontal axis. The emission spectrum 150 indicates the intensity 170 of the light emitted by the optoelectronic semiconductor chip 100, shown on the left vertical axis, as a function of the wavelength 160. Various resonance wavelength profiles 280 indicate the transmission angle 230, shown on the right vertical axis, at which the transmission spectrum 250 of the optical resonator 200 has the transmission maximum 275 at the respective resonance wavelength 265. In addition to the representation in Fig.4 shows a sixth resonance wavelength profile 280 , 286 which is established at a value of 3.0 of the refractive index of the material 210 of the optical resonator 200 .

[0043] The relative position of the resonance wavelength profiles 280 to the emission spectrum 150 can be adjusted via the dimensions of the optical resonator 200 and via the refractive index of the material 210 of the optical resonator 200. In the example shown in Fig. 5, the resonance wavelength 265 at a transmission angle 230 of 0° is greater than the peak wavelength 165 of the emission spectrum 150. In the example shown, the resonance wavelength 265 at a transmission angle 230 of 0° lies at a wavelength 160 at which the emission spectrum 150 of the optoelectronic semiconductor chip 100 has an intensity 170 of less than 20% of the intensity 170 at the peak wavelength 165.In other variants, however, the resonance wavelength profile 280 can also be set, for example, such that the resonance wavelength 265 is at a transmission angle 230 of 0 ° at a wavelength 160 , at which the emission spectrum 150 has an intensity 170 of less than 10% of the intensity 170 at the peak wavelength 165 .

[0044] The resonance wavelength 265, which corresponds to the peak wavelength 165 of the emission spectrum 150, is in the example shown in Fig. 5, depending on the resonance wavelength profile 280, at a transmission angle 230 between 20° and 70°. For example, this resonance wavelength 265 results from the first resonance wavelength profile 280, 281 at a transmission angle 230 between 20° and 30°. From the third resonance wavelength profile 280, 283, this resonance wavelength 265 results from a transmission angle 230 between 30° and 40°. From the fourth resonance wavelength profile 280, 284, this resonance wavelength 265 results from a transmission angle 230 between 40° and 50°. In the sixth resonance wavelength curve 280 , 286 , this resonance wavelength 265 results at a transmission angle 230 of approximately 60 ° .

[0045] Fig. 6 shows a schematic sectional side view of another variant of the optoelectronic component 10. The above description of the variant of the optoelectronic component 10 shown in Fig. 1 also applies to the variant of the optoelectronic component 10 shown in Fig. 6.

[0046] In the variant of the optoelectronic component 10 shown in Fig. 6, the optoelectronic semiconductor chip 100 is arranged on a carrier 300. This is merely an example. Other arrangements are also possible.

[0047] The variant of the optoelectronic component 10 shown in Fig. 6 has a first detector element 310 with a first detection surface 311 and a second detector element 320 with a second detection surface 321. The optoelectronic component 10 can additionally have further detector elements; however, only the first detector element 310 can be present, while the second detector element 320 is omitted.

[0048] In the example shown in Fig. 6, the emission surface 110 of the optoelectronic semiconductor chip 100, the first detection surface 311 of the first detector element 310 and the second detection surface 321 of the second detector element 320 are arranged laterally next to one another. In this example, the second detection surface 321 is spaced further from the emission surface 110 than the first detection surface 311. Other arrangements of the detection surfaces 311, 321 are also possible. The first detector element 310 is designed to detect light from a first sub-region 315 of the emission spectrum 150 of the optoelectronic semiconductor chip 100. The first detector element 310 detects only light from this first sub-range 315 of the emission spectrum 150 and does not detect light from other wavelength ranges.The second detector element 320 is configured to detect only light from a second sub-region 325 of the emission spectrum 150 of the optoelectronic semiconductor chip 100, but not light from other wavelength ranges. The first sub-region 315 and the second sub-region 325 are different from one another and are illustrated by way of example in Fig. 5.

[0049] The first detector element 310 and the second detector element

[0050] 320 can be designed, for example, as photodiodes. The wavelength selectivity of the first detector element 310 and the second detector element 320 can be achieved, for example, by a first filter 312 arranged on the first detection surface 311 and a first filter 312 arranged on the second detection surface

[0051] 321 arranged second filter 322. The first filter 312 only allows light from the first sub-range 315 of the emission spectrum 150 to pass through and filters out light from other wavelength ranges. The second filter 322 only allows light from the second sub-range 325 of the emission spectrum 150 to pass through and filters out light from other wavelength ranges.

[0052] The optical resonator 200 of the optoelectronic component 10 causes light with a wavelength from the first sub-range 315 of the emission spectrum 350 to be emitted predominantly only in a limited range of the transmission angle 230. If the emitted light is scattered in the relevant spatial region, it can reach the first detection surface 311 of the first detector element 310 and be detected by the first detector element 310. This makes it possible to draw conclusions about the spatial region in which the light was scattered. Light with a wavelength from the second sub-range 325 of the emission spectrum 150 of the optoelectronic semiconductor chip 100 is emitted by the optoelectronic component 10 predominantly only in a different angular range of the transmission angle 230.If the light is scattered in this other spatial region, it can reach the second detection surface 321 of the second detector element 320 and be detected by the second detector element 320. This also allows a conclusion to be drawn as to the spatial region in which the light in question was scattered.

[0053] Thus, the variant of the optoelectronic component 10 shown in Fig. 6 enables a spatially resolved investigation of the environment of the optoelectronic component 10.

[0054] The optoelectronic component 10 can, for example, be designed to detect a vital function of a living being, such as a vital function of a human. For example, the optoelectronic component 10 can be designed to record a photoplethysmogram.

[0055] Fig. 7 shows a schematic sectional side view of another variant of the optoelectronic component 10. The description of the variant of the optoelectronic component 10 shown in Fig. 1 also applies to the variant of the optoelectronic component 10 shown in Fig. 7.

[0056] In the variant of the optoelectronic component 10 shown in Fig. 10, the optoelectronic semiconductor chip 100 is arranged on a carrier 400. This is merely an example. Other arrangements are also possible.

[0057] In the variant of the optoelectronic component 10 shown in Fig. 7, the output side 202 of the optical resonator 200 borders an optical medium 410. The optical medium 410 can also be referred to as a waveguide. Light transmitted by the optical resonator 200 enters the optical medium 410.

[0058] The optical medium 410 has an exit surface 411 at which a portion of the light transmitted from the optical resonator 200 into the optical medium 410 can exit the optical medium 410. However, light whose transmission angle 230 is greater than a critical angle 485 is totally reflected at the exit surface 411 in the optical medium 410, so that this light does not exit the optical medium 410. The totally reflected light can then be guided to another location in the optical medium 410 and, for example, strike absorbing structures where it is absorbed.

[0059] The value of the critical angle 485 is determined by the refractive index of the optical medium 410 and the refractive index of the medium adjacent to the exit surface 411 of the optical medium 410, which can be air, for example. For a jump from a refractive index of 1.7 to a refractive index of 1, the critical angle 485, for example, results in a value of approximately 36°.

[0060] Fig. 8 shows a representation, corresponding to the representation in Fig. 5, of the emission spectrum 150 of the optoelectronic semiconductor chip 100 and of the resonance wavelength profile 280 of the transmission spectrum 250 of the optical resonator 200 of the variant of the optoelectronic component 10 shown in Fig. 7. In this variant of the optoelectronic component 10, the resonance wavelength profile 280 is tuned such that the resonance wavelength 265 lies at a fixed cutoff wavelength 465 at a transmission angle 230 which corresponds to the critical angle 485.

[0061] Light emitted by the optoelectronic semiconductor chip 100 with a wavelength 160 that is shorter than the cutoff wavelength 465 is emitted by the optical resonator 200 of the optoelectronic component 10 essentially only at transmission angles 230 that are greater than the critical angle 485. This light is totally reflected at the exit surface 411 of the optical medium 410 of the optoelectronic component 10 and does not exit the optical medium 410.

[0062] In the example shown in Figs. 7 and 8, the cutoff wavelength 465 is smaller than the peak wavelength 165 of the emission spectrum 150 of the optoelectronic semiconductor chip 100. Thus, the majority of the light emitted by the optoelectronic semiconductor chip can exit the optical medium 410.

[0063] The optoelectronic semiconductor chip 100 can, for example, be designed to emit predominantly in the infrared spectral range. In this case, a short-wave edge region of the emission spectrum 150 of the optoelectronic semiconductor chip 100 can, however, lie in the visible wavelength range. In this case, the cut-off wavelength 465 can, for example, be set such that the visible portion of the light emitted by the optoelectronic semiconductor chip 100 is cut off by not exiting the optical medium 410. The light exiting the optical medium 410 of the optoelectronic component 10 and emitted by the optoelectronic component 10 then has only infrared components and no visible components. In this case, the cut-off wavelength 465 can, for example, be between 900 nm and 920 nm.

[0064] The invention has been illustrated and described in more detail using preferred embodiments. However, the invention is not limited to the disclosed examples. Other variations may be devised by those skilled in the art. LIST OF REFERENCE SYMBOLS

[0065] 10 optoelectronic component

[0066] 100 optoelectronic semiconductor chips

[0067] 110 emission area

[0068] 150 Emission spectrum

[0069] 160 wavelength

[0070] 165 peak wavelength

[0071] 170 intensity

[0072] 200 optical resonator

[0073] 201 Entrance page

[0074] 202 Exit page

[0075] 210 materials

[0076] 220 mirrors

[0077] 230 transmission angle

[0078] 250 transmission spectrum

[0079] 265 Resonance wavelength (wavelength of the transmission maximum)

[0080] 270 transmittance

[0081] 275 transmission maximum

[0082] 280 Resonance wavelength curve

[0083] 281 first resonance wavelength curve

[0084] 282 second resonance wavelength curve

[0085] 283 third resonance wavelength curve

[0086] 284 fourth resonance wavelength curve

[0087] 285 fifth resonance wavelength curve

[0088] 286 sixth resonance wavelength curve

[0089] 300 carriers

[0090] 310 first detector element

[0091] 311 first detection area

[0092] 312 first filter

[0093] 315 first section

[0094] 320 second detector element 321 second detection surface

[0095] 322 second filter

[0096] 325 second section 400 carriers

[0097] 410 optical medium

[0098] 411 Exit area

[0099] 465 cutoff wavelength

[0100] 485 critical angle

Claims

PATENT CLAIMS 1. Optoelectronic component (10) with an optoelectronic semiconductor chip (100) with an emission surface (110) and with an optical resonator (200) which is arranged above the emission surface (110), wherein the optoelectronic semiconductor chip (100) has an emission spectrum (150) with a peak wavelength (165), wherein the optical resonator (200) has a transmission spectrum (250) which has a transmission maximum (275) at a resonance wavelength (265) which is dependent on a transmission angle (230), wherein the resonance wavelength (265) corresponds to the peak wavelength (165) at a transmission angle (230) between 20° and 70°, in particular at a transmission angle (230) between 40° and 50° or at a transmission angle (230) between 20° and 30°.

2. Optoelectronic component (10) according to claim 1, wherein the resonance wavelength (265) is greater than the peak wavelength (165) at a transmission angle (230) of 0°.

3. Optoelectronic component (10) according to one of the preceding claims, wherein the resonance wavelength (265) at a transmission angle (230) of 0° is at a wavelength (160) at which the emission spectrum (150) has an intensity (170) of less than 10% of the intensity (170) at the peak wavelength (165).

4. Optoelectronic component (10) according to one of the preceding claims, wherein the optical resonator (200) comprises a material (210) arranged between two mirrors (220), wherein the material (210) has a refractive index between 1.5 and 3.

5. Optoelectronic component (10) according to claim 4, wherein the mirrors (220) are designed as Bragg mirrors.

6. Optoelectronic component (10) according to one of the preceding claims, wherein the optical resonator (200) is adjacent to an optical medium (410), so that light transmitted by the optical resonator (200) reaches the optical medium (410), wherein at an exit surface (411) of the optical medium (410) light whose transmission angle (230) is greater than a critical angle (485) is totally reflected, wherein the resonance wavelength (265) at a transmission angle (230) which corresponds to the critical angle (485) corresponds to a fixed cut-off wavelength (465).

7. Optoelectronic component (10) according to claim 6, wherein the cutoff wavelength (465) is smaller than the peak wavelength (165).

8. Optoelectronic component (10) according to one of claims 6 and 7, wherein the cut-off wavelength (465) is between 900 nm and 920 nm.

9. Optoelectronic component (10) according to one of claims 1 to 5, wherein the optoelectronic component (10) has a first detector element (310) with a first detection surface (311), wherein the first detector element (310) is designed to detect only light from a first partial region (315) of the emission spectrum (150) of the optoelectronic semiconductor chip (100).

10. Optoelectronic component (10) according to claim 9, wherein the emission surface (110) of the optoelectronic semiconductor chip (100) and the first detection surface (311) are arranged laterally next to one another.

11. Optoelectronic component (10) according to one of claims 9 and 10, wherein the optoelectronic component (10) has a second detector element (320) with a second detection area (321), wherein the second detector element (320) is designed to detect only light from a second sub-region (325) of the emission spectrum (150) of the optoelectronic semiconductor chip (100), wherein the second sub-region (325) is different from the first sub-region (315).

12. Optoelectronic component (10) according to claim 11, wherein the first detection surface (311) and the second detection surface (321) are arranged laterally next to one another.

13. Optoelectronic component (10) according to one of claims 9 to 12, wherein the optoelectronic component (10) is provided to detect a vital function of a living being.

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