Electronic module having at least one power semiconductor component and method for producing same

Abstract

The invention relates to an electronic module (100) having at least one power semiconductor component (10) which is in electrical contact with current-carrying elements (22), and having at least one cooling element (26, 28) for at least indirectly cooling the at least one power semiconductor component (10), wherein the at least one cooling element (26, 28) can optionally be in the form of a cooling element (26, 28) produced in an additive manufacturing method.

Description

[0001] Description

[0002] Electronic module with at least one power semiconductor component and method for its production

[0003] Technical area

[0004] The invention relates to an electronic module comprising at least one power semiconductor component that can be cooled by means of a cooling element. Furthermore, the invention relates to a method for producing an electronic module.

[0005] State of the art

[0006] From DE 102021 209482 A1, the applicant discloses an electronic module with at least one power semiconductor component having the features of the preamble of claim 1. The known electronic module comprises a power semiconductor component, on the top and bottom of which a cooling element produced using an additive manufacturing process is arranged. A medium can flow through the cooling element in order to dissipate the heat generated in the power semiconductor component. Furthermore, the two cooling elements simultaneously serve to electrically contact the power semiconductor component, in that the two cooling elements are each connected to current-carrying components on the side facing away from the power semiconductor component.

[0007] Disclosure of the invention

[0008] The electronic module according to the invention with at least one power semiconductor component having the features of claim 1 has the advantage of simultaneously enabling both direct electrical contacting of the power semiconductor component with low contact resistances and effective cooling of the power semiconductor component. This is particularly intended for applications in which relatively high currents flow, such as in so-called busbars for contacting semiconductor chips. The invention is based on the idea of ​​enabling the desired low contact resistances through direct electrical contacting of the power semiconductor component and, at the same time, enabling indirect cooling of the power semiconductor component by connecting at least one cooling element to the elements serving to conduct the current, through heat transfer from the power semiconductor component via the electrical contact to the cooling element.

[0009] Against the background of the above explanations, an electronic module having the features of claim 1 therefore comprises at least one power semiconductor component that is electrically contacted with current-carrying elements. Furthermore, at least one cooling element is provided for at least indirectly cooling the at least one power semiconductor component. The invention is characterized in that the current-carrying elements are connected to a top side and / or a bottom side of the power semiconductor component, and in that the at least one cooling element is arranged on the side of a current-carrying element facing away from the at least one power semiconductor component.

[0010] Advantageous developments of the electronic module with at least one power semiconductor component are listed in the subclaims.

[0011] A particularly preferred embodiment of the electrical connection of the power semiconductor component provides that the at least one power semiconductor component is connected to the current-carrying elements by means of a contact, wherein the contact comprises structures produced in the additive process.

[0012] A potentially advantageous production of the cooling element and a particularly high cooling effect of the cooling element can be achieved by designing at least one cooling element as a cooling element produced using an additive manufacturing process, wherein the at least one cooling element is constructed from multiple layers, and wherein the layers form at least one channel for guiding a cooling medium. Alternatively, however, it is also conceivable to produce the cooling element in another, conventional manner.

[0013] The cooling medium, which is in particular an electrically non-conductive cooling medium, for example a cooling oil, is guided through this channel and circulated in order to enable the heat to be dissipated from the area of ​​the power semiconductor component.

[0014] The power semiconductor component is, in particular, a semiconductor chip, wherein the current-carrying elements are designed as so-called busbars. Busbars are, in particular, connecting rails. For example, the busbars are designed in the form of flat bars. The busbars preferably comprise copper and / or aluminum and / or alloys thereof. Busbars are designed for electrical power transmission.

[0015] Furthermore, for the optimized cooling effect, it is preferred if at least one current-carrying element and one cooling element are arranged on both opposite sides of the at least one power semiconductor component.

[0016] Regarding the (electrical) contact between the power semiconductor component and the current-carrying elements, there are different options depending on the application. For example, the contact can be formed either as a welded, soldered, or sintered connection, with the contact in each case being integrally bonded to the cooling element. Preferably, however, the contact can be made using structures manufactured using additive manufacturing.

[0017] A preferred arrangement of the components or electronic module described so far consists in the at least one power semiconductor component being arranged together with the current-carrying elements and the at least one cooling element in a housing. This housing can be easily attached or mounted, for example, in the area of ​​a control unit and represents a preconfigurable unit. Furthermore, it serves to form an additional mechanical connection between the individual components, particularly when the housing is arranged in contact with the at least one cooling element.

[0018] Preferably, the top side of the power semiconductor component is connected to an upper current-carrying element via an additively manufactured structure and the bottom side of the power semiconductor component is connected to a lower current-carrying element via an additively manufactured structure, wherein the upper current-carrying element is preferably thermally connected to an upper cooling element with a side facing away from the power semiconductor component and / or the lower current-carrying element is preferably thermally connected to a lower cooling element with a side facing away from the power semiconductor component.

[0019] Furthermore, the invention also includes a method for producing an electronic module designed in particular according to the invention, wherein the method comprises at least the following steps:

[0020] First, a power semiconductor component is at least indirectly contacted on its underside and / or top side with current-carrying elements. Subsequently, at least one cooling element is arranged on the side of the current-carrying element facing away from the power semiconductor component.

[0021] In a preferred embodiment of the method, it is provided that the contacting between the power semiconductor component and the current-carrying elements is carried out using structures produced on the power semiconductor component in an additive process.

[0022] In particular, it can also be provided that the structures are produced on metal plates that are connected to the power semiconductor component by sintered bonds. Further advantages, features, and details of the invention will become apparent from the following description of preferred embodiments of the invention and from the drawings.

[0023] Short description of the drawings

[0024] Fig. 1 shows an electronic module with a power semiconductor component to be cooled in a cross section and

[0025] Fig. 2 is a partially sectioned view taken along the plane ll-ll of Fig. 1.

[0026] Embodiments of the invention

[0027] Identical elements or elements with the same function are provided with the same reference numbers in the figures.

[0028] The electronic module 100 shown in Fig. 1 comprises a power semiconductor component 10 that generates heat during operation and is designed, in particular, in the form of a chip (IGBT or SiC MOSFET). The power semiconductor component 10 has, on its top side 12 and its bottom side 14, a plurality of contacts 16, 18 arranged side by side and perpendicular to the plane of the drawing in Fig. 1. The contacts 16, 18 are shown only symbolically in the figures and, depending on the application, can be designed, for example, as welded joints, soldered joints, or sintered joints.

[0029] Preferably, however, the contacts 16, 18 are formed as structures 19 produced in an additive process, in particular in the SLM (selective laser melting) process.

[0030] The contacts 16, 18 are arranged either directly on the corresponding areas of the power semiconductor component 10, or on metallizations in the form of metal plates 20, of which only one metal plate 20 is shown in Fig. 1 for the sake of simplicity.

[0031] The contacts 16, 18 serve for the electrical connection of the power semiconductor component 10 with current-carrying elements 22, so-called busbars 24, which serve in particular for current conduction and are made in particular of copper.

[0032] On the side of the busbars 24 facing away from the power semiconductor component 10, each of the busbars is connected to a cooling element 26, 28. The two cooling elements 26, 28, which are identical in the exemplary embodiment, were each produced using an additive manufacturing process. In particular, the cooling elements 26, 28 are manufactured using a so-called SLM process, in which a powder layer of metallic powder is selectively melted by a laser beam, after which the melted region subsequently solidifies to form the corresponding partial region of the cooling element 26, 28. A next layer of metallic powder is then applied to the solidified partial region until the respective cooling element 26, 28 is completely formed. Alternatively, the cooling elements 26, 28 can also be manufactured using other methods known from the prior art.

[0033] It is essential that the two cooling elements 26, 28 each have at least one channel 30, 32 for conducting a cooling medium. The cooling medium is, in particular, an electrically non-conductive cooling oil or a similar liquid. The cooling medium is circulated within the cooling elements 26, 28 to enable optimized heat dissipation.

[0034] The arrangement described so far, comprising the power semiconductor 10, the current-carrying elements 20, and the two cooling elements 26, 28, is partially surrounded by a housing 34, which in the illustrated embodiment has a U-shaped cross-section. The housing 34 serves to easily arrange the arrangement described so far, for example, in the housing of a control unit. Furthermore, the housing 34 provides a reliable mechanical connection between the individual elements of the arrangement. For example, through direct contact between the housing 34 and the cooling elements 26, 28, a contact force acting in the direction of the contacting arrangement 20 can be exerted on the busbars 24. The two plate-shaped cooling elements 26, 28 have no electrical functionality, but merely the functionality of cooling the power semiconductor component 10.For this purpose, the heat transfer from the power semiconductor component 10 via the contacts 16, 18 or the current-carrying elements 20 to the cooling elements 26, 28 is utilized. Since the current-carrying elements 20 are made of a material with good electrical and thermal conductivity (particularly copper), good heat transfer from the power semiconductor 10 toward the cooling elements 26, 28 is enabled.

[0035] The module 100 described so far is manufactured in that, in a first step, during the production of the wafers for the power semiconductor components 10, the metal plates 20 are first sintered onto the power semiconductor components 10. The structures 19 are then produced on the power semiconductor components 10 using an additive process. Thereafter (after the power semiconductor components 10 have been singulated), the power semiconductor components 10 are connected to the current-carrying elements 22, which are lower in the plane of the drawing in Fig. 1, with the structures 19 by welding, in particular by laser welding, or alternatively by soldering. The current-carrying elements 22, which are upper in the plane of the drawing in Fig. 1, are then also connected to the structures 19 by welding, in particular by laser welding or soldering. Thereafter, the cooling elements 26, 28 are arranged or, if applicable, manufactured using the additive manufacturing process and, if applicable,arranging said elements in the housing 34.

[0036] If no structures 19 produced by the additive process are used, the current-carrying elements 22 are connected to the power semiconductor component 10 via the contacts 16, 18 in a manner known per se.

[0037] The electronic module 100 described so far can be modified or altered in a variety of ways without deviating from the inventive concept.

Claims

Claims 1. Electronic module (100) with at least one power semiconductor component (10) which is electrically contacted with current-carrying elements (22), and with at least one cooling element (26, 28) for at least indirectly cooling the at least one power semiconductor component (10), characterized in that the current-carrying elements (22) are connected to a top side (12) and / or a bottom side (14) of the power semiconductor component (10), and in that the at least one cooling element (26, 28) is arranged on the side of a current-carrying element (22) facing away from the at least one power semiconductor component (10).

2. Module according to claim 1, characterized in that the at least one power semiconductor component (10) is connected to the current-carrying elements (22) by means of a contact (16, 18), wherein the contact (16, 18) comprises structures (19) produced in an additive process.

3. Module according to claim 1 or 2, characterized in that the at least one cooling element (26, 28) is designed as a cooling element (26, 28) produced in an additive manufacturing process, wherein the at least one cooling element (26, 28) is constructed from several layers, and wherein the layers form at least one channel (30, 32) for guiding a cooling medium.

4. Module according to claim 3, characterized in that that the cooling medium is an electrically non-conductive cooling medium, for example a cooling oil.

5. Module according to one of claims 1 to 4, characterized in that the at least one power semiconductor component (10) is a semiconductor chip, and that the current-carrying elements (22) comprise at least one busbar (24).

6. Module according to one of claims 1 to 5, characterized in that at least one current-carrying element (22) and one cooling element (26, 28) are arranged on both opposite sides of the at least one power semiconductor component (10).

7. Module according to one of claims 1 to 6, characterized in that the at least one power semiconductor component (10) is connected to the current-carrying elements (22) by means of a contact (16, 18), wherein the contact (16, 18) is designed as a welded, soldered or sintered connection.

8. Module according to one of claims 1 to 7, characterized in that the at least one power semiconductor component (10) together with the current-carrying elements (22) and the at least one cooling element (26, 28) are arranged at least in regions in a common housing (34).

9. Module according to claim 8, characterized in that the housing (34) is arranged in contact with the at least one cooling element (26, 28).

10. A method for producing an electronic module (100), which is preferably designed according to one of claims 1 to 9, comprising at least the following steps: -At least indirect contacting of a power semiconductor component (10) on its underside (14) and / or upper side (12) with current-carrying elements (22) -Arranging at least one cooling element (26, 28) on the side of the current-carrying element (22) facing away from the power semiconductor component (10).

11. The method according to claim 10, characterized in that the contacting between the power semiconductor component (10) and the current-carrying elements (22) is carried out using structures (19) produced on the power semiconductor component (10) in an additive process.

12. The method according to claim 11, characterized in that the structures (19) are produced on metal plates (20) which are or will be connected to the power semiconductor component (10) by sintered connections.

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