Optoelectronic semiconductor component and method for manufacturing an optoelectronic semiconductor component

Abstract

An optoelectronic semiconductor component (1) comprising a substrate (10), a boundary structure (20) and a dam element (30) is described herein. The boundary structure (20) and the dam element (30) are arranged on an upper side (10A) of the substrate (10). The boundary structure (20) comprises a first boundary element (201) and a second boundary element (202). The first and second boundary elements (201, 202) are arranged at a distance (D) from each other. The dam element (30) is arranged between the first boundary element (201) and the second boundary element (202). Furthermore, a method for manufacturing an optoelectronic semiconductor component (1) is disclosed.

Description

[0001] Description

[0002] OPTOELECTRONIC SEMICONDUCTOR COMPONENT AND METHOD FOR MANUFACTURING AN OPTOELECTRONIC SEMICONDUCTOR COMPONENT

[0003] The present application relates to an optoelectronic semiconductor component and a method for manufacturing an optoelectronic semiconductor component .

[0004] In particular, the optoelectronic semiconductor component is configured to act as a mounting carrier for a semiconductor body . The semiconductor body is in particular configured to emit and / or detect electromagnetic radiation, for example light that is perceptible to the human eye .

[0005] It is an obj ect of the present disclosure to provide an optoelectronic semiconductor component having improved manufactur ability .

[0006] A further obj ect is to provide a method for manufacturing an optoelectronic semiconductor component which simpli fies its production .

[0007] These obj ects are achieved by devices and a method according to the independent patent claims . Advantageous embodiments and further developments of the devices and the method are the subj ect of the dependent patent claims and will furthermore become apparent from the following description and the figures .

[0008] According to at least one embodiment , the optoelectronic semiconductor component comprises a substrate , a boundary structure and a dam element . The substrate is preferably mechanically sel f-supporting . In particular, the substrate is formed with an electrically insulating material , for example a ceramic material . The boundary structure is preferably formed with a material which is configured to delimit an extension of the dam element in a lateral direction, for example a metal . Here and in the following, the lateral direction is to be understood as a direction oriented parallel to a main plane of extension of the substrate . The dam element is particularly formed with a material which can be applied in a liquid state and subsequently cured to increase a mechanical stability .

[0009] According to at least one embodiment of the optoelectronic semiconductor component , the boundary structure and the dam element are arranged on an upper side of the substrate . The substrate is preferably extending in a main plane of extension . The upper side is in particular a main surface of the substrate oriented parallel to the main plane of extension of the substrate . The boundary structure and the dam element are both arranged on the same side of the substrate .

[0010] According to at least one embodiment of the optoelectronic semiconductor component , the boundary structure comprises a first boundary element and a second boundary element . The first and second boundary elements are in particular separate elements . Preferably, the first and second boundary elements are formed with the same material . Furthermore , the first and second boundary elements can have equal dimensions , such as an equal width and / or height . Here and in the following, the width of an element is to be understood as an extension in the lateral direction measured perpendicular to a main direction of extension of said element . Moreover, the height of an element is to be understood as an extension in a vertical direction measured perpendicular to a main plane of extension of said element . The vertical direction is oriented perpendicular to the lateral direction .

[0011] According to at least one embodiment of the optoelectronic semiconductor component , the first and second boundary elements are arranged at a distance from each other . In particular, the first and second boundary elements do not touch each other . Further, between the first and second boundary elements a cavity is formed . The distance between the first and second boundary elements is preferably constant over the entire lateral extension of the boundary structure .

[0012] According to at least one embodiment of the optoelectronic semiconductor component , the dam element is arranged between the first boundary element and the second boundary element . In other words , the cavity between the first and second boundary elements is filled completely with the material of the dam element . The boundary structure can advantageously prevent the material of the dam element from flowing over outer edges of the boundary structure . The boundary structure can even delimit the dam element material in the lateral extension i f the dam element exceeds the height of the boundary structure itsel f due to surface tension at the outer edges of the boundary structure .

[0013] According to at least one embodiment of the optoelectronic semiconductor component , the optoelectronic semiconductor component comprises a substrate , a boundary structure and a dam element , wherein

[0014] - the boundary structure and the dam element are arranged on an upper side of the substrate , - the boundary structure comprises a first boundary element and a second boundary element ,

[0015] - the first and second boundary elements are arranged at a distance from each other,

[0016] - the dam element is arranged between the first boundary element and the second boundary element .

[0017] An optoelectronic semiconductor component described herein is , inter alia, based on the following considerations : In order to provide protection for sensitive regions of the component , liquid casting materials can be applied, which are cured subsequently . In some cases , the casting should only cover the most sensitive parts of the component but must be hindered from covering other parts , such as a light emission surface , for example . Thus , there is a need for gaining control over the lateral extension of a liquid casting material . Such a control can be provided by the use of a dam element , which delimits the liquid casting material in its lateral extension . However, in current processes for depositing a dam element on a surface of the component , a height , width and position of the dam are hard to control with suf ficient accuracy, inter alia due to variable surface tension properties of the component ' s surface .

[0018] The optoelectronic semiconductor component described herein, inter alia, makes use of the idea of using a boundary structure to predefine a width and position of the dam element . Moreover, an aspect ratio of the dam element can be increased by the boundary structure . The boundary structure ' s sharp outer edges create surface tension for the material of the dam element and determine the maximum width of the dam element . Besides , the boundary structure can act as a sel falignment target , which advantageously decreases a necessary accuracy for a dispensing position for the material of the dam element .

[0019] According to at least one embodiment of the optoelectronic semiconductor component , the boundary elements each have a width of x pm, wherein 100 pm < x < 500 pm and preferably 200 pm < x < 400 pm . The width should be suf ficiently large to ef fectively delimit the lateral extension of the dam element .

[0020] According to at least one embodiment of the optoelectronic semiconductor component , the distance between the boundary elements is between 0 . 5*x pm and 2 *x pm . The distance is in particular measured as the minimum extension of a line connecting the first and second boundary elements .

[0021] According to at least one embodiment of the optoelectronic semiconductor component , the distance between the boundary elements is equal to the width . I f the distance is equal to the width, a dam element with an advantageously high aspect ratio can be formed . Here and in the following the term "equal" is to be understood as equal within the limits of a manufacturing tolerance .

[0022] According to at least one embodiment of the optoelectronic semiconductor component , the boundary elements each have an extension in a vertical direction of at least 10 pm, preferably of at least 60 pm . In other words , the height of the boundary elements is at least 10 pm and preferably at least 60 pm .

[0023] According to at least one embodiment of the optoelectronic semiconductor component , the boundary elements each comprise sharp outer edges , preferably having a 90 ° angle between a side surface and a top surface . The side surfaces of the boundary elements are each oriented perpendicular to the substrate and facing away from the dam element . The top surfaces of the boundary elements are each oriented parallel to the substrate and facing away from the substrate . Consequently, the outer edges are facing away from the inside of the dam element . A sharp outer edge of the boundary element facilitates the use of surface tension ef fects for delimiting the lateral extension of the dam element material .

[0024] According to at least one embodiment of the optoelectronic semiconductor component , the boundary structure is formed with at least one material selected from the following list : Ni , Pd, Au, Cu . These metals are suitable for the formation of electrical contacts . Thus , the boundary structure could be advantageously provided simultaneously with the formation of contact structures .

[0025] According to at least one embodiment of the optoelectronic semiconductor component , the boundary structure is arranged laterally circumferentially around a semiconductor body . The semiconductor body comprises a plurality of semiconductor regions , for example . In particular, the semiconductor body comprises an active region having a pn j unction which is configured for the emission or detection of electromagnetic radiation . Preferably, the boundary structure completely surrounds the semiconductor body . Advantageously, this enables the formation of a dam element in the form of a closed ring around the semiconductor body . For example , such a dam element can avoid a covering of the semiconductor body with a casting material applied subsequently . According to at least one embodiment of the optoelectronic semiconductor component , the dam element has an aspect ratio of at least 0 . 2 , preferably of at least 0 . 4 , particularly preferably of at least 0 . 5 . An aspect ratio is defined as a ratio between a vertical extension and a lateral extension of an element . In particular, the aspect ratio is equal to the height divided by the width of an element . Thus , a high aspect ratio refers to an element having a large height and a small width and vice versa . A high aspect ratio is advantageous for a dam element because a high dam can ef fectively delimit a lateral extension of a casting material and a small width of the dam element only consumes a small surface area on the substrate .

[0026] According to at least one embodiment of the optoelectronic semiconductor component , the dam element is formed with a polymer . In particular, the dam element is formed with a polysiloxane or an epoxy . For example , the dam element is impermeable for electromagnetic radiation . Preferably, the dam element is formed with a light-reflecting material .

[0027] According to at least one embodiment of the optoelectronic semiconductor component , a contact pad is arranged on the upper side of the substrate . The contact pad is configured to be used as a mounting surface in a soldering process . In particular, a semiconductor body is mounted on the contact pad . The contact pad is preferably formed with a metal or a metal alloy .

[0028] According to at least one embodiment of the optoelectronic semiconductor component , the boundary structure has the same extension in the vertical direction as the contact pad . In other words , the height of the contact pad is equal to the height of the boundary structure . Such a configuration can advantageously facilitate the manufacture of the optoelectronic semiconductor component .

[0029] According to at least one embodiment of the optoelectronic semiconductor component , the boundary structure is formed with the same material as the contact pad . Such a configuration can advantageously facilitate the manufacture of the optoelectronic semiconductor component .

[0030] A method for manufacturing an optoelectronic semiconductor component is also disclosed . The method for manufacturing an optoelectronic semiconductor component is particularly suitable for producing an optoelectronic semiconductor component described herein . This means that all features disclosed in connection with the optoelectronic semiconductor component are also disclosed for the method for manufacturing an optoelectronic semiconductor component and vice versa .

[0031] According to at least one embodiment of the method for manufacturing an optoelectronic semiconductor component , a substrate having a metalli zation layer on an upper side is provided . The metalli zation can be applied to the upper side by a galvanic deposition method, for example .

[0032] According to at least one embodiment of the method for manufacturing an optoelectronic semiconductor component , the metalli zation layer is structured to form a boundary structure comprising a first boundary element and a second boundary element , wherein the first and second boundary elements are arranged at a distance from each other . In particular, the metalli zation layer is at least partially or completely removed in some regions of the upper side . According to at least one embodiment of the method for manufacturing an optoelectronic semiconductor component , a dam element is dispensed between the first boundary element and the second boundary element . The material of the dam element is preferably a viscous fluid . In particular, the dam element is dispensed using j etting . Subsequently, the dam element can be cured to increase its mechanical stability . Preferably, the dam element is cured by heating it up to a temperature of at least 150 ° C for at least 1 hour . Due to the alignment ef fect of the dam element material between the boundary structure , a slight of fset of at least 200 pm from the center between the boundary elements is tolerable .

[0033] According to at least one embodiment , the method for manufacturing an optoelectronic semiconductor component comprises the steps of :

[0034] - providing a substrate having a metalli zation layer on an upper side ,

[0035] - structuring the metalli zation layer to form a boundary structure comprising a first boundary element and a second boundary element , wherein the first and second boundary elements are arranged at a distance from each other,

[0036] - depositing a dam element between the first boundary element and the second boundary element .

[0037] According to at least one embodiment of the method for manufacturing an optoelectronic semiconductor component , the metalli zation layer is structured by mechanically removing the material . For example , the metalli zation layer is structured using sawing, milling and / or grinding . According to at least one embodiment of the method for manufacturing an optoelectronic semiconductor component , the boundary structure is formed in the same process step as the contact pad . For example , the boundary structure is formed in a process of galvanically depositing metal for the contact pad using a mask layer .

[0038] According to at least one embodiment of the method for manufacturing an optoelectronic semiconductor component , the dam element is formed with a material having a viscosity between 2 . 5 Pa* s and 10 Pa* s , preferably between 4 Pa* s and 8 Pa* s . A material having such a viscosity is particularly suitable for the formation of a dam element with an advantageously high aspect ratio while still maintaining the possibility of a j etting deposition .

[0039] An optoelectronic semiconductor component described herein is particularly suitable for use in high power light-emitting diodes for the visible spectrum . Preferably, the semiconductor component described herein is used in automotive exterior applications such as headlamps or in general illumination .

[0040] Further advantages and advantageous designs and further developments of the optoelectronic semiconductor component will become apparent from the following exemplary embodiments , which are described below in association with the figures .

[0041] In the figures : Figure 1A shows a schematic cross-sectional view of an optoelectronic semiconductor component described herein according to a first exemplary embodiment ,

[0042] Figure IB shows a schematic top view of an optoelectronic semiconductor component described herein according to the first exemplary embodiment ,

[0043] Figure 2 shows a schematic cross-sectional view of an optoelectronic semiconductor component described herein according to a second exemplary embodiment ,

[0044] Figure 3 shows a schematic cross-sectional view of an optoelectronic semiconductor component described herein according to a third exemplary embodiment ,

[0045] Figure 4 shows a schematic top view of an optoelectronic semiconductor component described herein according to a fourth exemplary embodiment , and

[0046] Figures 5A and 5B show schematic cross-sectional views of an optoelectronic semiconductor component described herein according to the first exemplary embodiment in di f ferent steps of a method for its manufacture .

[0047] Identical , similar or equivalent elements are marked with the same reference signs in the figures . The figures and the proportions of the elements represented in the figures among each other are not to be considered as true to scale . Rather, individual elements may be oversi zed for better representability and / or comprehensibility . Figure 1A shows a schematic cross-sectional view of an optoelectronic semiconductor component 1 described herein according to a first exemplary embodiment .

[0048] The optoelectronic semiconductor component 1 comprises a substrate 10 , a boundary structure 20 and a dam element 30 . The substrate 10 is preferably mechanically sel f-supporting . In particular, the substrate 10 is formed with an electrically insulating material , for example a ceramic material .

[0049] The boundary structure 20 is preferably formed with a material which is configured to delimit an extension of the dam element 30 in a lateral direction X, for example a metal . Here and in the following, the lateral direction X is to be understood as a direction oriented parallel to a main plane of extension of the substrate 10 . The boundary structure 20 and the dam element 30 are arranged on an upper side 10A of the substrate 10 . The substrate 10 is preferably extending in a main plane of extension . The upper side 10A is in particular a main surface of the substrate 10 oriented parallel to the main plane of extension of the substrate 10 . The boundary structure 20 and the dam element 30 are both arranged on the same side of the substrate 10 .

[0050] Furthermore , the boundary structure 20 comprises a first boundary element 201 and a second boundary element 202 . The first and second boundary elements 201 , 202 are in particular separate elements . The first and second boundary elements 201 , 202 are formed with the same material . Furthermore , the first and second boundary elements 201 , 202 can have equal dimensions , such as an equal width W and / or height 20H . Here and in the following, the width W of an element is to be understood as an extension in the lateral direction X measured perpendicular to a main direction of extension of said element . Moreover, the height H of an element is to be understood as an extension in a vertical direction Y measured perpendicular to a main plane of extension of said element . The vertical direction Y is oriented perpendicular to the lateral direction X .

[0051] The first and second boundary elements 201 , 202 are arranged at a distance D from each other . In particular, the first and second boundary elements 201 , 202 do not touch each other . Further, between the first and second boundary elements 201 , 202 a cavity is formed . The distance D between the first and second boundary elements 201 , 202 is preferably constant over the entire lateral extension of the boundary structure 20 . The distance D between the boundary elements 201 , 202 is between 0 . 5*x pm and 2 *x pm . The distance D is in particular measured as the minimum extension of a line connecting the first and second boundary elements 201 , 202 .

[0052] Moreover, the boundary elements 201 , 202 each have an extension in a vertical direction Y of at least 10 pm, preferably of at least 60 pm . In other words , the height 20H of the boundary elements 201 , 202 is at least 10 pm and preferably at least 60 pm . The boundary elements 201 , 202 each comprise sharp outer edges , preferably having a 90 ° angle between a side surface 200A and a top surface 200B . The side surfaces 200A of the boundary elements 201 , 202 are each oriented perpendicular to the substrate 10 and facing away from the dam element 30 . The top surfaces 200B of the boundary elements 201 , 202 are each oriented parallel to the substrate 10 and facing away from the substrate 10 .

[0053] Consequently, the outer edges are facing away from the inside of the dam element 30 . A sharp outer edge of the boundary element 20 facilitates the use of surface tension ef fects for delimiting the lateral extension of the dam element 30 material .

[0054] The dam element 30 is particularly formed with a material which can be applied in a liquid state and subsequently cured to increase a mechanical stability . The dam element 30 is arranged between the first boundary element 201 and the second boundary element 202 . In other words , the cavity between the first and second boundary elements 201 , 202 is filled completely with the material of the dam element 30 . The boundary structure 20 can advantageously prevent the material of the dam element 30 from flowing over outer edges of the boundary structure 20 . The boundary structure 20 can even delimit the dam element material in its lateral extension i f the dam element 30 exceeds the height 20H of the boundary structure 20 itsel f due to surface tension at the outer edges of the boundary structure 20 .

[0055] The dam element 30 has a height 30H of at least 300 pm, preferably of at least 500 pm . The lateral extension or width W of the dam element 30 is defined by the boundary structure 20 . Thus , the width W of the dam element 30 is equal to the sum of the width W of the first and second boundary elements 201 , 202 and the distance D between the first and second boundary elements 201 , 202 .

[0056] The dam element 30 has an aspect ratio of at least 0 . 2 , preferably of at least 0 . 4 , particularly preferably of at least 0 . 5 . An aspect ratio is defined as a ratio between a vertical extension and a lateral extension of an element . In particular, the aspect ratio is equal to the height H divided by the width W of an element . Thus , a high aspect ratio refers to an element having a large height H and a small width W and vice versa . A high aspect ratio is advantageous for a dam element 30 because a high dam can ef fectively delimit a lateral extension of a casting material , and a small width W of the dam element 30 only consumes a small surface area on the substrate 10 .

[0057] Moreover, a contact pad 50 is arranged on the upper side 10A of the substrate 10 . The contact pad 50 is configured to be used as a mounting surface in a soldering process . In particular, a semiconductor body 40 is mounted on the contact pad 50 . The contact pad 50 is preferably formed with a metal or a metal alloy .

[0058] The boundary structure 20 has the same extension in the vertical direction Y as the contact pad 50 . In other words , the height of the contact pad 50H is equal to the height of the boundary structure 20H . Such a configuration can advantageously facilitate the manufacture of the optoelectronic semiconductor component 1 . The boundary structure 20 is formed with the same material as the contact pad 50 . Such a configuration can advantageously facilitate the manufacture of the optoelectronic semiconductor component .

[0059] Figure IB shows a schematic top view of an optoelectronic semiconductor component 1 described herein according to the first exemplary embodiment .

[0060] The top view shows the extension of the first and second boundary elements 201 , 202 parallel to each other and parallel to the contact pad 50 . Figure 2 shows a schematic cross-sectional view of an optoelectronic semiconductor component 1 described herein according to a second exemplary embodiment .

[0061] The second exemplary embodiment is essentially equal to the first exemplary embodiment shown in Figures 1A and IB . In contrast to the first exemplary embodiment , the dam element 30 has a lower aspect ratio . This results from a lower dam height 30H compared to the sum of the width W and the distance D of the first and second boundary elements 201 , 202 .

[0062] Figure 3 shows a schematic cross-sectional view of an optoelectronic semiconductor component 1 described herein according to a third exemplary embodiment .

[0063] The third exemplary embodiment is essentially equal to the first exemplary embodiment shown in Figure 1A. Additionally, the third exemplary embodiment shows a casting material 70 and a semiconductor body 40 . The casting material 70 is , for example , a polymer material which is laterally delimited by the dam element 30 . The dam element 30 in particular prevents the semiconductor body 40 from being covered with the casting material 70 . The casting material 70 is in particular configured to completely cover a bond wire 80 to protect it from environmental influences and mechanical stress .

[0064] The semiconductor body 40 is arranged on the contact pads 50 and comprises a plurality of semiconductor regions . In particular, the semiconductor body comprises an active region having a pn j unction which is configured for the emission or detection of electromagnetic radiation . Preferably, the boundary structure 20 completely surrounds the semiconductor body 40 . Advantageously, this enables the formation of a dam element 30 in the form of a closed ring around the semiconductor body 40 . For example , such a dam element 30 can avoid a covering of the semiconductor body 40 with the casting material 70 applied subsequently .

[0065] Figure 4 shows a schematic top view of an optoelectronic semiconductor component 1 described herein according to a fourth exemplary embodiment . The fourth exemplary embodiment is essentially equal to the first exemplary embodiment shown in Figure IB .

[0066] A plurality of contact pads 50 is arranged on the substrate 10 . The boundary structure 20 is arranged laterally circumferentially around all contact pads 50 in the form of a rectangle .

[0067] The boundary structure 20 completely surrounds the contact pads 50 . Advantageously, this enables the formation of a dam element 30 in the form of a closed ring around all contact pads 50 and a subsequently mounted semiconductor body 40 . For example , such a dam element 30 can avoid a covering of the semiconductor body 40 with a casting material 70 applied subsequently .

[0068] The distance D of the boundary elements 201 , 202 is constant around the circumference of the boundary structure 20 . However, the boundary structure 20 could also have a di f ferent shape comprising rounded corners in a top view, for example . Thus , the distance of the first and second boundary elements 201 , 202 could also vary slightly along the circumference , for example at the corners of a rectangle . Figures 5A and 5B show schematic cross-sectional views of an optoelectronic semiconductor component 1 described herein according to the first exemplary embodiment in di f ferent steps of a method for its manufacture .

[0069] Figure 5A shows a first step of the method for manufacturing an optoelectronic semiconductor component 1 , wherein a substrate 10 is provided . A metalli zation 60 is arranged on an upper side 10A of the substrate 10 . The metalli zation 60 is formed as a continuous layer with a metal . The upper side 10A is completely covered with the metalli zation 60 .

[0070] Figure 5B shows a further step of the method for manufacturing an optoelectronic semiconductor component 1 , wherein the metalli zation 60 is structured into a contact pad 50 and a boundary structure 20 having a first and a second boundary element 201 , 202 . The metalli zation 60 is partially removed by a mechanical process , such as milling, sawing or grinding . Thus , first and second boundary elements 201 , 202 having a defined width W and distance D from each other are formed . Moreover, the contact pad 50 has a height 50H equal to the height of the boundary structure 20H .

[0071] Alternatively, the metalli zation 60 is partially deposited by a galvanic deposition method and a mask layer . However, in both alternative methods the boundary structure 20 is formed in the same process step as the contact pad 50 .

[0072] The invention described herein is not limited by the description given with reference to the exemplary embodiments . Rather, the invention encompasses any novel feature and any combination of features , including in particular any combination of features in the claims, even if this feature or this combination is not itself explicitly indicated in the claims or exemplary embodiments.

[0073] References

[0074] 1 optoelectronic semiconductor component

[0075] 10 substrate

[0076] 20 boundary structure

[0077] 30 dam element

[0078] 40 semiconductor body

[0079] 50 contact pad

[0080] 60 metalli zation layer

[0081] 70 casting material

[0082] 80 bond wire

[0083] 201 first boundary element

[0084] 202 second boundary element

[0085] 10A upper side

[0086] 20H boundary structure height

[0087] 30H dam element height

[0088] 50H contact pad height

[0089] 200A side surface

[0090] 200B top surface

[0091] D distance

[0092] W width

[0093] X lateral direction

[0094] Y vertical direction

Claims

Claims1. Optoelectronic semiconductor component (1) comprising a substrate (10) , a boundary structure (20) and a dam element( 30 ) , wherein- the boundary structure (20) and the dam element (30) are arranged on an upper side (10A) of the substrate (10) ,- the boundary structure (20) comprises a first boundary element (201) and a second boundary element (202) ,- the first and second boundary elements (201, 202) are arranged at a distance (D) from each other,- the dam element (30) is arranged between the first boundary element (201) and the second boundary element (202) .

2. Optoelectronic semiconductor component (1) according to the preceding claim, wherein- the boundary elements (201, 202) each have a width (W) of x pm, wherein 100 pm < x < 500 pm and preferably200 pm < x < 400 pm.

3. Optoelectronic semiconductor component (1) according to the preceding claim, wherein- the distance (D) between the boundary elements is between 0.5*x pm and 2*x pm.

4. Optoelectronic semiconductor component (1) according to one of the preceding claims, wherein- the distance (D) between the boundary elements (201, 202) is equal to the width (W) .

5. Optoelectronic semiconductor component (1) according to one of the preceding claims, wherein- the boundary elements (201, 202) each have an extension ina vertical direction (Y) of at least 10 pm, preferably of at least 60 pm .

6. Optoelectronic semiconductor component (1) according to one of the preceding claims, wherein- the boundary elements (201, 202) each comprise sharp outer edges, preferably having a 90° angle between a side surface (200A) and a top surface (200B) .

7. Optoelectronic semiconductor component (1) according to one of the preceding claims, wherein- the boundary structure (20) is formed with at least one material selected from the following list: Ni, Pd, Au, Cu.

8. Optoelectronic semiconductor component (1) according to one of the preceding claims, wherein- the boundary structure (20) is arranged laterally circumferentially around a semiconductor body (40) .

9. Optoelectronic semiconductor component (1) according to one of the preceding claims, wherein- the dam element (30) has an aspect ratio of at least 0.2, preferably of at least 0.4, particularly preferably of at least 0.5.

10. Optoelectronic semiconductor component (1) according to one of the preceding claims, wherein- the dam element (30) is formed with a polymer.

11. Optoelectronic semiconductor component (1) according to one of the preceding claims, wherein- a contact pad (50) is arranged on the upper side (10A) of the substrate (10) .

12. Optoelectronic semiconductor component (1) according to the preceding claim, wherein- the boundary structure (20) has the same extension in the vertical direction (Y) as the contact pad (50) .

13. Optoelectronic semiconductor component (1) according to one of preceding claims 11 and 12, wherein- the boundary structure (20) is formed with the same material as the contact pad (50) .

14. Method for manufacturing an optoelectronic semiconductor component (1) , comprising the steps of:- providing a substrate (10) having a metallization layer(60) on an upper side (10A) ,- structuring the metallization layer (60) to form a boundary structure (20) comprising a first boundary element (201) and a second boundary element (202) , wherein the first and second boundary elements (201, 202) are arranged at a distance (D) from each other,- depositing dam element (30) between the first boundary element (201) and the second boundary element (202) .

15. Method for manufacturing an optoelectronic semiconductor component (1) according to the preceding claim, wherein- the metallization layer (60) is structured by mechanically removing the material.

16. Method for manufacturing an optoelectronic semiconductor component (1) according to one of the preceding claims, wherein- the boundary structure (20) is formed in the same process step as the contact pad (50) .

17. Method for manufacturing an optoelectronic semiconductor component (1) according to one of the preceding claims, wherein - the dam element (30) is formed with a material having a viscosity between 2.5 Pa*s and 10 Pa*s, preferably between 4 Pa*s and 8 Pa*s.

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