Member, production method for member, and semiconductor production–related device

Abstract

The purpose of the present disclosure is to provide a member that has excellent chemical resistance, a production method for the member, and a semiconductor production–related device. Disclosed is a member obtained by layering a carbon material on at least a portion of the surface of a material (a). The member is at least one of a building material member, a mobility member, an aerospace member, a semiconductor member, and an information communication member.

Description

Component, component manufacturing method, and semiconductor manufacturing-related equipment

[0001] The present disclosure relates to a component, a method for manufacturing the component, and a semiconductor manufacturing-related device.

[0002] Techniques have been proposed for coating substrates in semiconductor manufacturing equipment to prevent contamination (see, for example, Patent Documents 1 to 3).

[0003] JP 2009-21369 A JP 2009-239151 A JP 2011-23563 A

[0004] An object of the present disclosure is to provide a member having excellent chemical resistance, a method for manufacturing the same, and semiconductor manufacturing-related equipment.

[0005] The present disclosure (1) is a member in which at least a portion of the surface of a material (a) is laminated with a carbon material, and the member is at least one member selected from the group consisting of building materials, mobility materials, aerospace materials, semiconductor materials, and information and communication materials.

[0006] The present disclosure (2) is the member according to the present disclosure (1), wherein the carbon material is at least one selected from the group consisting of DLC (diamond-like carbon) and diamond.

[0007] The present disclosure (3) is the member according to the present disclosure (1), wherein the carbon material is DLC (diamond-like carbon).

[0008] The present disclosure (4) is a member of any combination with any of the present disclosures (1) to (3), wherein the material (a) is at least one selected from the group consisting of resin, rubber, metal, and ceramic.

[0009] The present disclosure (5) is a member of any combination with any of the present disclosures (1) to (4), wherein the material (a) is at least one selected from the group consisting of resin and rubber.

[0010] The present disclosure (6) is a member of any combination with any of the present disclosures (1) to (5), wherein the material (a) is at least one selected from the group consisting of polyether ether ketone resin and polyphenylene sulfide.

[0011] The present disclosure (7) is a member of any combination with any of the present disclosures (1) to (6), in which the material (a) has a temperature of 560°C or less when it loses 1% by mass due to thermal decomposition.

[0012] The present disclosure (8) is a member in any combination with any of the present disclosures (1) to (7), wherein the coating containing the carbon material has a thickness of 0.01 to 100 μm.

[0013] The present disclosure (9) is a member in any combination with any of the present disclosures (1) to (8), wherein the coating containing the carbon material has a thickness of 0.1 to 10 μm.

[0014] The present disclosure (10) is a member of any combination with any of the present disclosures (1) to (9), wherein the member is at least one selected from the group consisting of piping, nozzles, tubes, tanks, containers, joints, valves, pumps, spin chucks, O-rings, packings, gaskets, washers, and sealing materials.

[0015] The present disclosure (11) is a member of any combination with any of the present disclosures (1) to (10) in which the member is a member for semiconductor manufacturing related equipment.

[0016] The present disclosure (12) is the member according to the present disclosure (11), wherein the semiconductor manufacturing related device is a device in which a chemical is used.

[0017] The present disclosure (13) relates to a method for treating a disease in which the drug is TMAH([(CH ３ ) ４ N] ＋ [OH] － ), sulfuric acid, isopropyl alcohol, hydrofluoric acid, mixed acid of hydrofluoric acid and nitric acid, SPM (Sulfuric Acid Hydrogen Peroxide Mixture), SC1 (NH ４ OH, H ２ O ２ and H ２ O mixture), SC2 (HCl, H ２ O２ and H ２ The component according to the present disclosure (12) is at least one selected from the group consisting of a mixture of ammonium hydroxide, ...

[0018] The present disclosure (14) is the member according to the present disclosure (12), wherein the chemical is at least one selected from the group consisting of silicon-based gas, arsenic-based gas, phosphorus-based gas, boron-based gas, metal hydride gas, metal alkyl gas, halogenated hydrocarbon gas, halogen-halide gas, nitrogen oxide gas, hydrogen sulfide gas, ammonia gas, trimethylamine gas, propane gas, trimethylaluminum gas, hydrogen gas, helium gas, nitrogen gas, oxygen gas, argon gas, and carbon dioxide gas.

[0019] The semiconductor manufacturing-related equipment member of the present disclosure (15) is a member of any combination with any of the present disclosures (12) to (14), in which at least a part of the surface that comes into contact with the chemical is laminated with the carbon material.

[0020] The semiconductor manufacturing related equipment member of the present disclosure (16) is a semiconductor manufacturing related equipment member in which chemicals are used inside the equipment, and is a member of any combination with any of the present disclosures (11) to (15), in which at least a part of the surface that comes into contact with the chemicals is laminated with the carbon material.

[0021] The present disclosure (17) is a member in any combination with any of the present disclosures (1) to (16), in which the mass change rate in the following chemical resistance evaluation is 50.0% by mass or less. (Chemical Resistance Evaluation) A test piece of the member (a test piece in which a coating containing a carbon material is laminated on the entire surface of material (a), material (a) size: 10 mm x 50 mm x 6 mm, coating thickness: 0.7 μm or 2 μm) is dried at 60°C for 2 hours. After drying, the mass of the test piece before immersion is measured under room temperature (20°C) conditions. After the measurement, the test piece is completely immersed in a mixed acid in which the concentration ratio (molar ratio) of hydrofluoric acid to nitric acid is 1:5 (hydrofluoric acid concentration: 50% concentration, nitric acid concentration: 60% concentration) and kept at room temperature (20°C) for 1 week (168 hours). After the immersion, the test piece is washed with pure water, water droplets on the surface are wiped off, and the test piece is dried at 60° C. for 12 hours. The mass of the test piece after immersion is measured under room temperature (20° C.) conditions. The mass change rate (%) is calculated from the measured masses before and after immersion.

[0022] The present disclosure (18) is a member in any combination with any of the present disclosures (1) to (17), in which the mass change rate in the following chemical resistance evaluation is 50.0 mass% or less. (Chemical Resistance Evaluation) A test piece of the member (a test piece in which a coating containing a carbon material is laminated on the entire surface of material (a), material (a) size: 10 mm x 50 mm x 2 mm, coating thickness: 0.8 μm or 1.8 μm) is dried at 60°C for 2 hours. After drying, the mass of the test piece before immersion is measured under room temperature (20°C) conditions. After the measurement, the test piece is completely immersed in a mixed acid in which the concentration ratio (molar ratio) of hydrofluoric acid to nitric acid is 1:100 (hydrofluoric acid concentration: 50% concentration, nitric acid concentration: 60% concentration) and kept at room temperature (20°C) for 1 week (168 hours). After the immersion, the test piece is washed with pure water, water droplets on the surface are wiped off, and the test piece is dried at 60° C. for 12 hours. The mass of the test piece after immersion is measured under room temperature (20° C.) conditions. The mass change rate (%) is calculated from the measured masses before and after immersion.

[0023] The present disclosure (19) is a method for manufacturing a member in any combination with any of the present disclosures (1) to (18), in which the member is manufactured under conditions of a temperature at which the material (a) loses 1% by mass due to thermal decomposition or lower.

[0024] The present disclosure (20) is a method for producing a member according to the present disclosure (19), comprising a step of depositing the carbon material on a surface of the material (a) using CVD, sputtering, ion vapor deposition, or arc ion plating.

[0025] The present disclosure (21) is a semiconductor manufacturing-related device equipped with any combination of components of the present disclosures (1) to (18).

[0026] The present disclosure (22) is a semiconductor manufacturing-related device of the present disclosure (21), which is at least one selected from the group consisting of semiconductor manufacturing devices and devices related to semiconductor manufacturing devices.

[0027] The present disclosure (23) is the semiconductor manufacturing-related equipment of the present disclosure (22), wherein the semiconductor manufacturing equipment is at least one selected from the group consisting of a photolithography process equipment, a thin film formation / etching / cleaning / drying equipment, an inspection / evaluation equipment / manufacturing equipment, a resist processing equipment, an etching equipment, a cleaning / drying equipment, a CVD equipment, a thin film formation equipment, a CMP equipment, a processing equipment, an aging equipment, and an inspection equipment, and the semiconductor manufacturing equipment-related equipment is at least one selected from the group consisting of a pure water / chemical equipment, a gas equipment, a clean room equipment, and a manufacturing-related equipment.

[0028] The present disclosure (24) is directed to a photolithography process apparatus in which the photolithography process apparatus is at least one selected from the group consisting of a coating apparatus, a resist stripping apparatus, a developing apparatus (developer), and a descum apparatus; the thin film formation / etching / cleaning / drying apparatus is at least one selected from the group consisting of a vacuum deposition apparatus, a cleaning apparatus, a drying apparatus, and a scrub cleaning apparatus; the inspection / evaluation apparatus / manufacturing apparatus is a defect repair apparatus; the resist processing apparatus is at least one selected from the group consisting of a coating apparatus, a developing apparatus, a resist stripping apparatus, and an ashing apparatus; the etching apparatus is at least one selected from the group consisting of a dry etching apparatus and a wet etching apparatus; the cleaning / drying apparatus is at least one selected from the group consisting of a wet cleaning apparatus, a scrub cleaning apparatus, and a drying apparatus; the CVD apparatus is at least one selected from the group consisting of a high-pressure CVD apparatus, a SACVD apparatus, a low-pressure CVD apparatus, a plasma CVD apparatus, a metal CVD apparatus, and an ALD apparatus; the thin film forming apparatus is at least one selected from the group consisting of a vacuum deposition apparatus, a silicon epitaxial growth apparatus, a compound semiconductor epitaxial apparatus (MOCVD apparatus, MBE apparatus), and a plating apparatus; the CMP apparatus is at least one selected from the group consisting of a CMP apparatus and a CMP cleaning apparatus; the processing apparatus is a bump plating apparatus; the aging apparatus is at least one selected from the group consisting of an aging apparatus, a burn-in apparatus, an IC insertion apparatus, and an IC extraction apparatus; the inspection apparatus is a life test apparatus; the pure water / chemical liquid apparatus is at least one selected from the group consisting of a chemical supply apparatus, a slurry supply apparatus, a chemical purification apparatus, and a waste liquid treatment apparatus; the gas apparatus is at least one selected from the group consisting of a gas generation apparatus, a gas purification apparatus, a gas mixing apparatus, a gas detection apparatus, and an exhaust gas treatment apparatus; the clean room apparatus is at least one selected from the group consisting of a thermal chamber and an environmental test apparatus; The manufacturing-related equipment is at least one selected from the group consisting of a jig cleaning / drying device, a flow control device, a packaging device, and a measuring device for liquids and gases.

[0029] According to the present disclosure, it is possible to provide a member having excellent chemical resistance, a method for manufacturing the same, and semiconductor manufacturing-related equipment.

[0030] The present disclosure will be specifically described below.

[0031] The present disclosure relates to a member having a material (a) on at least a portion of its surface laminated with a carbon material, the member being at least one member selected from the group consisting of building materials, mobility materials, aerospace materials, semiconductor materials, and information and communications materials. The member of the present disclosure has excellent chemical resistance.

[0032] In the member of the present disclosure, at least a portion of the surface of the material (a) is laminated with a carbon material.

[0033] The material (a) is not particularly limited, and known organic or inorganic materials can be used, and specific examples include resin, rubber, metal, ceramic, etc. The material (a) is preferably an organic material. Furthermore, the material (a) is preferably at least one selected from the group consisting of resin, rubber, metal, and ceramic, and more preferably at least one selected from the group consisting of resin and rubber.

[0034] The resin is not particularly limited, and known resins can be used. Examples include polyolefin resins, polyester resins, polyamide (PA) resins, fluororesins, etc. Heat-resistant resins such as engineering plastic resins and super engineering plastic resins can also be suitably used.

[0035] As the resin, from the viewpoint of improving adhesion to the carbon material, a non-fluorine-containing resin (a resin that does not contain fluorine) or a heat-resistant resin is preferred, and a heat-resistant resin that does not contain fluorine is more preferred.

[0036] The heat-resistant resin may be any resin generally recognized as having heat resistance, but it is preferable to use a heat-resistant resin other than a fluorine-containing ethylenic polymer (a fluorine-containing ethylenic polymer). In this specification, "heat resistance" means a property that allows continuous use at temperatures of 150°C or higher.

[0037] Examples of the heat-resistant resin include polyamideimide resin (PAI), polyimide resin (PI), polyethersulfone resin (PES), polyetherimide resin, aromatic polyether ketone resin (PAEK), aromatic polyester resin, and polyarylene sulfide resin (PAS). One type may be used alone, or two or more types may be used in combination.

[0038] PAI is a resin composed of a polymer having amide and imide bonds in its molecular structure. The PAI is not particularly limited, and examples include resins composed of high-molecular-weight polymers obtained by various reactions, such as the reaction of an aromatic diamine having an amide bond in its molecule with an aromatic tetracarboxylic acid such as pyromellitic acid; the reaction of an aromatic tricarboxylic acid such as trimellitic anhydride with a diamine such as 4,4-diaminophenyl ether or a diisocyanate such as diphenylmethane diisocyanate; and the reaction of a dibasic acid having an aromatic imide ring in its molecule with a diamine. From the perspective of excellent heat resistance, PAI is preferably composed of a polymer having an aromatic ring in its main chain. PAI features include high thermal stability, abrasion resistance, and creep resistance that is resistant to change even under load. It is also thermoplastic and has excellent melt processability, allowing it to be molded by extrusion or compression molding. The melt flow rate (MFR) is preferably in the range of 10 to 80 g / 10 min.

[0039] PI is a resin made of a polymer having an imide bond in its molecular structure. The PI is not particularly limited, and examples include resins made of high-molecular-weight polymers obtained by the reaction of aromatic tetracarboxylic anhydrides such as pyromellitic anhydride. From the viewpoint of excellent heat resistance, PI made of a polymer having an aromatic ring in the main chain is preferred. PIs are characterized by high heat resistance, insulating properties, low dielectric constant, low dielectric loss, and radiation resistance, and are classified into non-thermoplastic polyimides, thermoplastic polyimides, thermosetting polyimides, and soluble polyimides. Furthermore, the MFR (melt flow rate) is preferably in the range of 0.1 to 50 g / 10 min.

[0040] PES has the following general formula:

[0041]

[0042] The PES is a resin made of a polymer having a repeating unit represented by the formula: The PES is not particularly limited, and examples include resins made of a polymer obtained by polycondensation of dichlorodiphenyl sulfone and bisphenol. PES is characterized by its high heat resistance, with a glass transition temperature (Tg) of 225°C. It is an amorphous plastic with excellent properties, such as dimensional stability, high fluidity, and flame retardancy, in addition to high heat resistance, and is used in a wide range of industrial applications, including housings for electrical and electronic components and automotive parts. Furthermore, the MFR (melt flow rate) is preferably in the range of 5 to 60 g / 10 min.

[0043] The aromatic polyetherketone resin is a resin containing a repeating unit composed of an arylene group, an ether group [—O—], and a carbonyl group [—C(═O)—]. Examples of the aromatic polyetherketone resin include polyetherketone resin (PEK), polyetheretherketone resin (PEEK), polyetherketoneketone resin (PEKK), polyetheretherketoneketone resin (PEEKK), and polyetherketone ester resin. The aromatic polyetherketone resins can be used alone or in combination of two or more. The aromatic polyetherketone resin is preferably at least one selected from the group consisting of PEK, PEEK, PEKK, PEEKK, and polyetherketone ester resin, more preferably at least one selected from the group consisting of PEEK and PEKK, and more preferably PEEK. PEEK has a high continuous use temperature of 260°C and excellent heat resistance, hot water resistance, flame retardancy, mechanical properties, and electrical properties, making it suitable for use in aerospace, automobiles, medical equipment, 3D printers, food, and semiconductors. Its melt flow rate (MFR) is preferably in the range of 1 to 20 g / 10 min.

[0044] PAS has the following general formula:

[0045]

[0046] (wherein Ar represents an arylene group). The PAS is not particularly limited, and examples include polyphenylene sulfide (PPS). PPS is a thermoplastic resin with a normal heat resistance temperature of 220-240°C and cold resistance down to -20°C. It has excellent fatigue and creep properties, as well as good weather resistance and hydrolysis resistance. It is a flame-retardant material without the addition of flame retardants, and also has heat shock resistance. It also has good moldability and a high degree of freedom in the shape of molded products, making it used in the electrical and electronic component field for connectors, various electronic components, and automotive parts. The melt flow rate (MFR) is preferably in the range of 10-50 g / 10 min.

[0047] The heat-resistant resin is preferably at least one selected from the group consisting of PAI, PI, PES, aromatic polyether ketone resin, and PAS, more preferably at least one selected from the group consisting of aromatic polyether ketone resin and PAS, and even more preferably an aromatic polyether ketone resin.

[0048] The rubber may be either a fluororubber or a non-fluororubber (rubber not containing fluorine). Specific examples include fluororubber, diene rubbers such as acrylonitrile-butadiene rubber (NBR) or its hydride (HNBR), styrene-butadiene rubber (SBR), chloroprene rubber (CR), butadiene rubber (BR), natural rubber (NR), isoprene rubber (IR), and cyclopentene rubber (CPR), ethylene-propylene-termonomer copolymer rubber, silicone rubber, butyl rubber, epichlorohydrin rubber, acrylic rubber, chlorinated polyethylene (CPE), chlorosulfonated ethylene rubber (CSM), polyblends of acrylonitrile-butadiene rubber and vinyl chloride (PVC-NBR), ethylene propylene diene rubber (EPDM), and ethylene propylene rubber (EPM). Of these, non-fluororubbers are preferred from the viewpoint of improving adhesion to carbon materials.

[0049] The metal is not particularly limited, and known metals can be used, including iron, steel, non-ferrous metals, etc. Examples of steel include SPC material, SS material, SC material, SK material, stainless steel, chromium-molybdenum high-tensile steel, white cast iron, gray cast iron, and spheroidal graphite cast iron. Examples of non-ferrous metals include aluminum-aluminum alloy, copper-copper alloy, zinc-zinc alloy, titanium-titanium alloy, magnesium-magnesium alloy, and nickel-nickel alloy.

[0050] The ceramic is not particularly limited, and known ceramics can be used, such as alumina, zirconia, aluminum nitride, silicon carbide, silicon oxide, silicon nitride, forsterite, steatite, cordierite, sialon, machinable ceramics, barium titanate, lead zirconate, ferrite, and mullite.

[0051] Alumina has the characteristics of excellent electrical insulation, heat resistance, abrasion resistance, mechanical strength, relatively high thermal conductivity, and is highly versatile.

[0052] Zirconia has excellent thermal properties, a melting point of 2700°C, a maximum operating temperature of approximately 1200°C, a high thermal shock resistance of Δ400°C, and a significantly lower thermal conductivity than other ceramics.

[0053] Aluminum nitride is characterized by its extremely high thermal conductivity, excellent heat dissipation, insulation, and thermal shock resistance, and is used as a substrate material. Aluminum nitride substrates can be metallized.

[0054] Silicon carbide is characterized by its chemical and physical stability, high hardness, extremely high thermal conductivity compared to other ceramics, and semi-conductivity.

[0055] Silicon oxide is characterized by its excellent heat resistance and thermal shock resistance, and its Vickers hardness is 8.6 to 9.8 GPa.

[0056] Silicon nitride is characterized by its low coefficient of thermal expansion, chemical stability, and excellent wear resistance and electrical insulation, making it used in a wide range of industrial fields.

[0057] Forsterite is characterized by its high insulation resistance and is therefore widely used as an electrical insulating material. Its dielectric constant is 6.5 and its dielectric loss tangent (Tan δ) is small, making it useful as a high-frequency insulating material.

[0058] The characteristics of steatite are low high frequency loss, high insulation resistance at high temperatures, and high mechanical strength.

[0059] A characteristic of cordierite is that when heated, the crystals expand in the radial direction and contract in the height direction.

[0060] The characteristics of sialon include excellent heat resistance, mechanical strength in high-temperature environments, thermal shock resistance, and wear resistance, as well as low thermal expansion, high rigidity, and corrosion resistance.

[0061] Machinable ceramics are characterized by their ease of cutting, suitability for fine and precision machining, and low porosity, which reduces outgassing and helium permeation, providing stable performance even in a vacuum.

[0062] Barium titanate is characterized by its extremely high dielectric constant, which makes it widely used as a dielectric material in multilayer ceramic capacitors and the like, and its extremely high refractive index, which makes it also used as an optical material.

[0063] Lead zirconate is characterized by a large piezoelectric charge coefficient, a medium dielectric constant, and a high coupling coefficient.

[0064] The characteristics of ferrite are that it is a magnetic material that can become a strong magnet, is less conductive to electricity than metallic magnetic materials, and because it is a baked oxide (porcelain), it is resistant to rust and chemicals.

[0065] Mullite oxide is characterized by its excellent heat resistance, impact resistance, and abrasion resistance, and can be produced at relatively low cost.

[0066] Among the above ceramics, zirconia, aluminum nitride, silicon oxide, forsterite, steatite, cordierite, and sialon are preferred, with zirconia, aluminum nitride, and silicon oxide being particularly preferred, from the viewpoint of increasing the effect of laminating with a carbon material.

[0067] The temperature at which the material (a) loses 1% by mass due to thermal decomposition (hereinafter also referred to as the 1% thermal decomposition temperature) is preferably 560°C or lower. From the viewpoint of improving chemical resistance, the upper limit of the 1% thermal decomposition temperature is more preferably 500°C, even more preferably 450°C. The lower limit is not particularly limited, but is preferably 150°C, more preferably 200°C, and even more preferably 250°C. The 1% thermal decomposition temperature is measured using a thermal analyzer STA7200 manufactured by Hitachi High-Tech Science Corporation. The measurement is performed in a nitrogen purge atmosphere at 200 mL / min. A 10 mg sample is placed in an aluminum pan, held at 25°C for 10 minutes, and then heated to 600°C at a heating rate of 10°C / min. The temperature at which a 1% mass loss occurs from the initial mass is defined as the 1% thermal decomposition temperature.

[0068] To enhance adhesion, the material (a) may be degreased in advance, preferably by wiping with ethanol or isopropyl alcohol or ultrasonic cleaning, though not particularly limited thereto. Pretreatments include roughening the surface by sandblasting or the like, or by chemical conversion treatment such as alumite treatment, or by plasma treatment or corona treatment, and plasma treatment or corona treatment is particularly preferred.

[0069] The material (a) may be surface-treated with any known method to enhance adhesion, although this is not particularly limited. Specifically, the material may be treated with a silane coupling agent, such as an epoxysilane, aminosilane, isocyanatesilane, vinylsilane, acrylicsilane, hydrophobic alkylsilane, phenylsilane, or fluorinated alkylsilane, which has a reactive functional group.

[0070] Examples of the silane coupling agent include epoxy silanes such as γ-glycidoxypropyltriethoxysilane and β-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, amino silanes such as aminopropyltriethoxysilane and N-phenylaminopropyltrimethoxysilane, isocyanate silanes such as 3-isocyanatepropyltrimethoxysilane, vinyl silanes such as vinyltrimethoxysilane, and acrylic silanes such as acryloxytrimethoxysilane, with 3-aminopropyltriethoxysilane, vinyltrimethoxysilane, and 3-methacryloxypropyltriethoxysilane being preferred.

[0071] In this specification, the carbon material refers to a material containing carbon, and preferably contains at least one selected from the group consisting of fullerene, carbon nanotube, graphite, amorphous carbon, and hydrogen-free carbyne. The carbon material can be any material that can form a carbon-containing coating on the surface of material (a) without any particular limitations. Among these, from the viewpoint of chemical resistance, the carbon material is preferably at least one selected from the group consisting of DLC (diamond-like carbon) and diamond, and more preferably DLC.

[0072] Examples of the carbon-containing coating formed on the surface of the material (a) include thin films containing carbon as a main component, such as diamond-like carbon films (DLC films), carbon nitride films (CN films), and amorphous carbon films. Of these, DLC films are preferred.

[0073] The carbon-containing coating can be formed by known vapor deposition film formation methods. For example, the carbon-containing coating can be formed by CVD (chemical vapor deposition) or PVD (physical vapor deposition). Examples of CVD include plasma CVD, thermal CVD, and photo CVD. Examples of PVD include sputtering, arc ion plating, ion vapor deposition, ion beam, and laser ablation. Of these, CVD, sputtering, ion vapor deposition, and arc ion plating are preferred.

[0074] When a carbon film is formed by CVD, the source gas is, for example, C Ｘ H Ｙ (C represents carbon, H represents hydrogen, and X and Y represent integers of 1 or more.) In this case, the carbon film may contain hydrogen atoms as impurity atoms. On the other hand, when a carbon film is formed by PVD, the carbon film often contains hydrogen atoms as impurity atoms. Therefore, a carbon-containing film formed by CVD or PVD may contain hydrogen atoms as impurity atoms.

[0075] The carbon-containing coating can also be formed by a composite surface treatment. The composite surface treatment is a technique in which two or more surface treatments are performed on a substrate (material (a)). By performing a composite surface treatment, it is possible to improve the properties compared to when a single surface treatment is performed.

[0076] As the composite surface treatment, for example, PHN (nitriding) and PH coating can be used to form a carbon film on a substrate (material (a)). For example, by using "PHN (nitriding)" and "PH coating (DLC)" as the composite surface treatment, it is possible to improve the adhesion of DLC. Note that nitriding is a technique for diffusing and penetrating nitrogen (N) into the surface of a substrate to harden the vicinity of the substrate surface, and PHN (nitriding) is a nitriding method that uses plasma in a vacuum. The PH coating is a technique for forming a film on a substrate using arc ion plating, sputtering, or the like, which belong to the PVD methods.

[0077] In the member of the present disclosure, from the viewpoint of chemical resistance, the coating containing the carbon material preferably has a thickness of 0.01 to 100 μm. The lower limit of the thickness is more preferably 0.05 μm, and even more preferably 0.1 μm. The upper limit of the thickness is more preferably 50 μm, and even more preferably 10 μm.

[0078] The carbon material-containing coating preferably has a carbon material content of 90 to 100% by mass in the coating (100% by mass). The lower limit of the content is more preferably 95% by mass, and even more preferably 98% by mass. The upper limit of the purity of the carbon material is not particularly limited and may be 100% by mass.

[0079] The member of the present disclosure is used as at least one member selected from the group consisting of building materials, mobility members, aerospace members, semiconductor members, and information and communication members. As the member, a semiconductor member is preferable in terms of excellent chemical resistance, and a semiconductor manufacturing-related equipment member (semiconductor manufacturing-related equipment article) is more preferable.

[0080] Examples of the building materials (construction materials) include interior architectural materials such as baseboards, ceiling materials, and plumbing materials, and exterior architectural materials such as waterproof sheets, waterproofing materials, exterior wall materials, and roofing materials. Examples of the mobility components include parts used in ferries, trains, automobiles, motorcycles, drones, robots, and the like. Examples of the aerospace components include exterior and interior materials for aircraft, rockets, and the like, wire coating materials, cable protection materials, jet engines, cabin interior materials, and parts thereof. Examples of the semiconductor components include process materials used in semiconductor manufacturing and parts for semiconductor manufacturing-related equipment. Examples of the information and communication components include parts for devices such as wireless LAN transmission and reception circuits, circuit boards, and parts for optical communication devices.

[0081] The member of the present disclosure is preferably applicable to at least one selected from the group consisting of piping, nozzles, tubes, tanks, containers, joints, valves, pumps, spin chucks, O-rings, packings, gaskets, washers, and sealing materials, since chemical resistance is required. In particular, the member of the present disclosure is preferably applicable to the piping, nozzles, tubes, etc. in semiconductor manufacturing equipment.

[0082] The piping is not particularly limited, but examples of its shape include a robust pipe type, a flexible hose that can be incorporated to fit the installation space, a bellows pipe with a large diameter that can be bent, etc. The inside of the piping may be polished with high precision so as not to generate dust and not to disturb the liquid flow or gas flow.

[0083] The nozzle is not particularly limited, but the tip may be precisely machined to match the size and shape of the part, and in addition, since it comes into contact with the part, it can be made of a highly hard and durable material that is resistant to friction and bending.

[0084] The tube is not particularly limited, but the tube diameter is preferably 2 mm to 400 mm, more preferably 2 mm to 100 mm, and particularly preferably 2 mm to 25 mm. A material having stress crack resistance, chemical resistance, excellent mechanical strength, and cleanliness (low contamination of the chemical solution by extracted ions) is used.

[0085] The tank or container is not particularly limited, but may be precision cleaned (water washing, acetic acid immersion, wiping cleaning, pure water cleaning, etc.) to remove dirt and residues. Packaging after cleaning may be carried out in a clean room or clean booth environment.

[0086] The joints and valves are not particularly limited, but are required to be oil-free, particle-free, dead space-free, and external leak-free, and the size is preferably in the range of Φ3.2 to 40.0 mm, and more preferably in the range of Φ3.2 to 12.7 mm.

[0087] The pump is not particularly limited, but may be required to have retractability.

[0088] The spin chuck is not particularly limited, but may be required to have hardness, corrosion resistance, and dimensional stability, and may be provided with electrical conductivity.

[0089] Although there are no particular limitations on the O-rings and sealing materials, the required material properties are excellent elasticity, good compression set, high wear resistance, excellent heat resistance, resistance to corrosion by applied liquids and gases, and long life. In particular, O-rings used in semiconductor manufacturing equipment are used in harsh chemical environments, such as being exposed to various plasmas, and therefore may be required to have high heat resistance, chemical resistance, and plasma resistance.

[0090] The packing and gasket are not particularly limited, but may be required to have a low coefficient of friction and excellent abrasion resistance, and may also be required to have heat resistance, cold resistance, pressure resistance, and chemical resistance to prevent leakage.

[0091] The washer is not particularly limited, but is expected to be used in a clean room or the like and may be required to have durability, corrosion resistance, and rust prevention properties.

[0092] The semiconductor manufacturing equipment of the above-mentioned semiconductor manufacturing related equipment includes photolithography process equipment (coating equipment, resist stripping equipment, developing equipment (developer), baking equipment, descum equipment), thin film formation / etching / cleaning / drying equipment (vacuum deposition equipment, sputtering equipment, CVD equipment, cleaning equipment, etching equipment, drying equipment, scrub cleaning equipment), inspection evaluation equipment and other manufacturing equipment (defect repair equipment), wafer processing equipment (wafer marking equipment), resist processing equipment (coating equipment, developing equipment, resist stripping equipment, ashing equipment, baking equipment), etching Equipment (dry etching equipment, wet etching equipment), cleaning and drying equipment (dry cleaning equipment, wet cleaning equipment, scrub cleaning equipment, drying equipment), heat treatment equipment (oxidation equipment, diffusion equipment, annealing equipment), ion implantation equipment (high current ion implantation equipment, medium current ion implantation equipment, high energy ion implantation equipment), thin film formation equipment, CVD equipment (high pressure CVD equipment, SACVD, low pressure CVD, plasma CVD equipment, metal CVD equipment, ALD equipment), sputtering equipment, other thin film formation equipment (vacuum deposition equipment, silicon epitaxial growth equipment, compound semiconductor conductor epitaxial equipment (MOCVD equipment, MBE equipment), plating equipment), inspection and evaluation equipment (Auger electron spectroscopy equipment), CMP equipment (CMP equipment, CMP cleaning equipment), other processing equipment (wafer marking equipment, back grinding machines, bump plating equipment, back grinder tape applicators, back grinders, back grinder tape peelers), dicing equipment (dicing equipment, wafer mounting equipment), bonding equipment (die bonding equipment, hybrid bonding equipment, wire bonding equipment, inner lead bonding equipment, outer lead bonding equipment, flip chip bonding equipment), packaging equipment (molding equipment, deburring equipment, solder processing equipment), other testing equipment (electron beam testing equipment, laser beam testing equipment), probing equipment (proppers), handlers, aging equipment (aging equipment, burn-in equipment, IC insertion equipment, IC extraction equipment), other inspection equipment (cold-heat testing equipment, temperature and humidity testing equipment, pressure cooker equipment, laser processing systems, various life test equipment), etc.Equipment related to semiconductor manufacturing equipment includes various transport devices (intra-process wafer transport devices, inter-process wafer transport devices, stockers), pure water and chemical liquid equipment (pure water production equipment, ultrafiltration equipment, reverse osmosis equipment, sterilization equipment, chemical supply equipment, slurry supply equipment, chemical purification equipment, waste liquid treatment equipment), various gas equipment (gas generators, gas purification equipment, gas mixing equipment, gas detection equipment, exhaust gas treatment equipment), clean room equipment (clean benches, clean tunnels, thermal chambers, environmental testing equipment, air showers, pass boxes), and other manufacturing-related equipment (various jig cleaning and drying equipment, flow control equipment, various taping equipment, various packaging equipment, measuring equipment for liquids and various gases).

[0093] Among these, from the perspective of laminating carbon materials and taking advantage of their chemical resistance properties, we offer photolithography process equipment (coating equipment, resist stripping equipment, developing equipment (developer), descum equipment), thin film formation / etching / cleaning / drying equipment (vacuum deposition equipment, CVD equipment, cleaning equipment, etching equipment, drying equipment, scrub cleaning equipment), inspection evaluation equipment and other manufacturing equipment (defect repair equipment), resist processing equipment (coating equipment, developing equipment, resist stripping equipment, ashing equipment), etching equipment (dry etching equipment, wet etching equipment), cleaning / drying equipment (wet cleaning equipment, Preferred examples of semiconductor manufacturing equipment include: scrub cleaning equipment, drying equipment), CVD equipment (high-pressure CVD equipment, SACVD, low-pressure CVD, plasma CVD equipment, metal CVD equipment, ALD equipment), other thin-film formation equipment (vacuum deposition equipment, silicon epitaxial growth equipment, compound semiconductor epitaxial equipment (MOCVD equipment, MBE equipment), plating equipment), CMP equipment (CMP equipment, CMP cleaning equipment), other processing equipment (bump plating equipment), aging equipment (aging equipment, burn-in equipment, IC insertion equipment, IC extraction equipment), and other inspection equipment (various life test equipment). Preferred examples of equipment related to semiconductor manufacturing equipment include pure water / chemical liquid equipment (chemical supply equipment, slurry supply equipment, chemical purification equipment, waste liquid treatment equipment), various gas equipment (gas generation equipment, gas purification equipment, gas mixing equipment, gas detection equipment, exhaust gas treatment equipment), clean room equipment (thermal chambers, environmental testing equipment), and other manufacturing-related equipment (various jig cleaning / drying equipment, flow rate control equipment, various packaging equipment, and various liquid / gas measuring equipment).

[0094] As described above, the members of the present disclosure can be suitably used as semiconductor manufacturing-related equipment components (semiconductor manufacturing-related equipment articles), but because of their excellent chemical resistance, they are more suitable as components constituting semiconductor manufacturing-related equipment in which chemicals are used inside the equipment.

[0095] The chemicals are not particularly limited, but include chemicals used in semiconductor manufacturing related equipment, etc. The chemicals can be used alone or in combination of two or more.

[0096] Specific examples of the chemical include TMAH ([(CH ３ ) ４ N] ＋ [OH] － ), sulfuric acid, isopropyl alcohol, hydrofluoric acid, mixed acid of hydrofluoric acid and nitric acid, SPM (Sulfuric Acid Hydrogen Peroxide Mixture), SC1 (NH ４ OH, H ２ O ２ and H ２ O mixture), SC2 (HCl, H ２ O ２ and H ２ O mixture), phosphoric acid, and hydrochloric acid. ３ ) ４ N] ＋ [OH] － ), sulfuric acid, isopropyl alcohol, hydrofluoric acid, mixed acid of hydrofluoric acid and nitric acid, SPM (Sulfuric Acid Hydrogen Peroxide Mixture), SC1 (NH ４ OH, H ２ O ２ and H ２ O mixture), SC2 (HCl, H ２ O ２ and H ２ At least one selected from the group consisting of a mixture of hydrofluoric acid and nitric acid, SPM, and hydrofluoric acid is preferred, and a mixed acid of hydrofluoric acid and nitric acid is even more preferred.

[0097] Other examples of the chemical include at least one selected from the group consisting of silicon-based gases, arsenic-based gases, phosphorus-based gases, boron-based gases, metal hydride gases, metal alkyl gases, halogenated hydrocarbon gases, halogen-halide gases, nitrogen oxide gases, hydrogen sulfide gases, ammonia gas, trimethylamine gas, propane gas, trimethylaluminum gas, hydrogen gas, helium gas, nitrogen gas, oxygen gas, argon gas, and carbon dioxide gas. Also preferred as the chemical is at least one selected from the group consisting of silicon-based gases, arsenic-based gases, phosphorus-based gases, boron-based gases, metal hydride gases, metal alkyl gases, halogenated hydrocarbon gases, halogen-halide gases, nitrogen oxide gases, hydrogen sulfide gas, ammonia gas, trimethylamine gas, propane gas, trimethylaluminum gas, hydrogen gas, helium gas, nitrogen gas, oxygen gas, argon gas, and carbon dioxide gas.

[0098] Examples of the silicon-based gas include monosilane, dichlorosilane, trichlorosilane, silicon tetrachloride, silicon tetrafluoride, and disilane. Examples of the arsenic-based gas include arsine, arsenic(III) fluoride, arsenic(V) fluoride, arsenic(III) chloride, and arsenic(V) chloride. Examples of the phosphorus-based gas include phosphine, phosphorus(III) fluoride, phosphorus(V) fluoride, phosphorus(III) chloride, phosphorus(V) chloride, and phosphorus oxychloride. Examples of the boron-based gas include diborane, boron trifluoride, boron trichloride, and boron tribromide. Examples of the metal hydride gas include hydrogen selenide, monogermane, hydrogen telluride, stibine, and tin hydride. Examples of the metal alkyl gas include trialkylgallium and trialkylindium. Examples of the halogenated hydrocarbon gas include tetrafluoromethane, trifluoromethane, difluoromethane, hexafluoropropane, octafluoropropane, and octafluorocyclobutane. Examples of the halogen / halide gas include fluorine, hydrogen fluoride, chlorine, hydrogen chloride, carbon tetrachloride, hydrogen bromide, sulfur hexafluoride, nitrogen trifluoride, sulfur tetrafluoride, tungsten(VI) fluoride, molybdenum(VI) fluoride, germanium tetrachloride, tin(IV) chloride, antimony(V) chloride, tungsten(VI) chloride, and molybdenum hexachloride. Examples of the nitrogen oxide gas include nitric oxide, nitrogen dioxide, and dinitrogen monoxide. Among these, ammonia gas, nitrogen trifluoride, dinitrogen monoxide, monosilane, and octafluorocyclobutane are preferred, and ammonia gas, nitrogen trifluoride, and dinitrogen monoxide are more preferred.

[0099] In order to ensure chemical resistance, it is preferable that at least a portion of the surface of the semiconductor manufacturing-related equipment member (semiconductor manufacturing-related equipment article) that comes into contact with the chemicals is laminated with the carbon material, and it is more preferable that the entire surface that comes into contact with the chemicals is laminated with the carbon material.

[0100] In terms of chemical resistance, the member of the present disclosure preferably has a mass change rate of 50.0 mass% or less in the following chemical resistance evaluation. (Chemical Resistance Evaluation) A test piece of the above member (a test piece having a coating containing a carbon material laminated on the entire surface of material (a), material (a) size: 10 mm × 50 mm × 6 mm, coating thickness: 0.7 μm or 2 μm) is dried at 60°C for 2 hours. After drying, the mass of the test piece before immersion is measured under room temperature (20°C) conditions. After measurement, the test piece is completely immersed in a mixed acid of hydrofluoric acid and nitric acid with a concentration ratio (molar ratio) of 1:5 (hydrofluoric acid concentration: 50% concentration, nitric acid concentration: 60% concentration) and kept at room temperature (20°C) for 1 day (24 hours) or 1 week (168 hours). After the immersion, the test piece is washed with pure water, water droplets on the surface are wiped off, and the test piece is dried at 60° C. for 12 hours. The mass of the test piece after immersion is measured under room temperature (20° C.) conditions. The mass change rate (%) is calculated from the measured masses before and after immersion.

[0101] The upper limit of the mass change rate is more preferably 35.0% by mass, even more preferably 25.0% by mass, and even more preferably 10.0% by mass. The lower limit is not particularly limited, and 0% by mass is most preferred.

[0102] In terms of chemical resistance, the member of the present disclosure preferably has a mass change rate of 50.0% by mass or less in the following chemical resistance evaluation. (Chemical Resistance Evaluation) A test piece of the above member (a test piece having a coating containing a carbon material laminated on the entire surface of material (a), material (a) size: 10 mm x 50 mm x 6 mm, coating thickness: 0.7 μm or 2 μm) is dried at 60°C for 2 hours. After drying, the mass of the test piece before immersion is measured under room temperature (20°C). After measurement, the test piece is completely immersed in a mixed acid with a hydrofluoric acid to nitric acid concentration ratio (molar ratio) of 1:100 (hydrofluoric acid concentration: 50% concentration, nitric acid concentration: 60% concentration) and held at room temperature (20°C) for 1 day (24 hours). After holding, the test piece is washed with pure water, water droplets on the surface are wiped off, and the test piece is dried at 60°C for 12 hours, and the mass of the test piece after immersion is measured under room temperature (20°C) conditions. The mass change rate (%) is calculated from the measured masses before and after immersion.

[0103] The upper limit of the mass change rate is more preferably 15.0% by mass, even more preferably 10.0% by mass, and even more preferably 5.0% by mass. The lower limit is not particularly limited, and 0% by mass is most preferred.

[0104] In terms of chemical resistance, the member of the present disclosure preferably has a mass change rate of 50.0% by mass or less in the following chemical resistance evaluation. (Chemical Resistance Evaluation) A test piece of the above member (a test piece having a coating containing a carbon material laminated over the entire surface of material (a), material (a) size: 10 mm x 50 mm x 6 mm, coating thickness: 0.7 μm or 2 μm) is dried at 60°C for 2 hours. After drying, the mass of the test piece before immersion is measured under room temperature (20°C). After measurement, the test piece is completely immersed in SPM (a volumetric blend of concentrated sulfuric acid and hydrogen peroxide solution at a ratio of 1:0.25 to 1) and held at 80°C for 1 day (24 hours). After holding, the test piece is washed with pure water, water droplets on the surface are wiped off, and the test piece is dried at 60°C for 12 hours. The mass of the test piece after immersion is measured under room temperature (20°C). The mass change rate (%) is calculated from the measured masses before and after immersion.

[0105] The upper limit of the mass change rate is more preferably 30.0% by mass, even more preferably 20.0% by mass, and even more preferably 18.0% by mass. The lower limit is not particularly limited, and 0% by mass is most preferred.

[0106] In terms of chemical resistance, the member of the present disclosure preferably has a mass change rate of 50.0 mass% or less in the following chemical resistance evaluation. (Chemical Resistance Evaluation) A test piece of the above member (a test piece having a coating containing a carbon material laminated over the entire surface of material (a), material (a) size: 10 mm × 50 mm × 2 mm, coating thickness: 0.8 μm or 1.8 μm) is dried at 60°C for 2 hours. After drying, the mass of the test piece before immersion is measured under room temperature (20°C) conditions. After measurement, the test piece is completely immersed in a mixed acid with a concentration ratio (molar ratio) of hydrofluoric acid to nitric acid of 1:5 (hydrofluoric acid concentration: 50% concentration, nitric acid concentration: 60% concentration) and kept at room temperature (20°C) for 1 day (24 hours) or 1 week (168 hours). After the immersion, the test piece is washed with pure water, water droplets on the surface are wiped off, and the test piece is dried at 60° C. for 12 hours. The mass of the test piece after immersion is measured under room temperature (20° C.) conditions. The mass change rate (%) is calculated from the measured masses before and after immersion.

[0107] The upper limit of the mass change rate is more preferably 3.0% by mass, even more preferably 1.0% by mass, and even more preferably 0.5% by mass. The lower limit is not particularly limited, and 0% by mass is most preferred.

[0108] In terms of chemical resistance, the member of the present disclosure preferably has a mass change rate of 50.0 mass% or less in the following chemical resistance evaluation. (Chemical Resistance Evaluation) A test piece of the above member (a test piece having a coating containing a carbon material laminated on the entire surface of material (a), material (a) size: 10 mm x 50 mm x 2 mm, coating thickness: 0.8 μm or 1.8 μm) is dried at 60°C for 2 hours. After drying, the mass of the test piece before immersion is measured under room temperature (20°C) conditions. After measurement, the test piece is completely immersed in a mixed acid with a concentration ratio (molar ratio) of hydrofluoric acid to nitric acid of 1:100 (hydrofluoric acid concentration: 50% concentration, nitric acid concentration: 60% concentration) and kept at room temperature (20°C) for 1 day (24 hours) or 1 week (168 hours). After the immersion, the test piece is washed with pure water, water droplets on the surface are wiped off, and the test piece is dried at 60° C. for 12 hours. The mass of the test piece after immersion is measured under room temperature (20° C.) conditions. The mass change rate (%) is calculated from the measured masses before and after immersion.

[0109] The upper limit of the mass change rate is more preferably 3.0% by mass, even more preferably 2.0% by mass, and even more preferably 1.0% by mass. The lower limit is not particularly limited, and 0% by mass is most preferred.

[0110] In terms of chemical resistance, the member of the present disclosure preferably has a mass change rate of 28.0 mass% or less in the following chemical resistance evaluation. (Chemical Resistance Evaluation) A test piece of the above member (a test piece having a coating containing a carbon material laminated over the entire surface of material (a), material (a) size: 10 mm x 50 mm x 2 mm, coating thickness: 0.8 μm or 1.8 μm) is dried at 60°C for 2 hours. After drying, the mass of the test piece before immersion is measured under room temperature (20°C). After measurement, the test piece is completely immersed in SPM (a volumetric blend of concentrated sulfuric acid and hydrogen peroxide solution at a ratio of 1:0.25 to 1) and held at 80°C for 1 day (24 hours). After holding, the test piece is washed with pure water, water droplets on the surface are wiped off, and the test piece is dried at 60°C for 12 hours. The mass of the test piece after immersion is measured under room temperature (20°C). The mass change rate (%) is calculated from the measured masses before and after immersion.

[0111] The upper limit of the mass change rate is more preferably 20.0% by mass, even more preferably 15.0% by mass, and even more preferably 12.0% by mass. The lower limit is not particularly limited, and 0% by mass is most preferred.

[0112] From the viewpoint of chemical resistance, the member of the present disclosure preferably has a mass change rate of 10.0 mass% or less in the following chemical resistance evaluation. (Chemical Resistance Evaluation) A test piece of the above member (a test piece in which a coating containing a carbon material is laminated on the entire surface of material (a), size of material (a): 10 mm x 50 mm x 6 mm, coating thickness: 0.7 μm or 2 μm) is dried at 60°C for 2 hours. After drying, the mass of the test piece before immersion is measured under room temperature (20°C) conditions. After the measurement, the test piece is immersed in TMAH([(CH ３ ) ４ N] ＋ [OH] － The test piece is then completely immersed in a 25% concentration solution at 80°C and held for one week (168 hours). After holding, the test piece is washed with pure water, water droplets on the surface are wiped off, and the test piece is dried at 60°C for 12 hours. The mass of the test piece after immersion is measured under room temperature (20°C). The mass change rate (%) is calculated from the measured masses before and after immersion.

[0113] The upper limit of the mass change rate is more preferably 5.0% by mass, even more preferably 1.0% by mass, and even more preferably 0.5% by mass. The lower limit is not particularly limited, and 0% by mass is most preferred.

[0114] From the viewpoint of chemical resistance, the member of the present disclosure preferably has a mass change rate of 10.0 mass% or less in the following chemical resistance evaluation. (Chemical Resistance Evaluation) A test piece of the above member (a test piece in which a coating containing a carbon material is laminated on the entire surface of material (a), size of material (a): 10 mm x 50 mm x 2 mm, coating thickness: 0.8 μm or 1.8 μm) is dried at 60°C for 2 hours. After drying, the mass of the test piece before immersion is measured under room temperature (20°C) conditions. After the measurement, the test piece is immersed in TMAH([(CH ３ ) ４ N] ＋ [OH] －The test piece is then completely immersed in a 25% concentration solution at 80°C and held for one week (168 hours). After holding, the test piece is washed with pure water, water droplets on the surface are wiped off, and the test piece is dried at 60°C for 12 hours. The mass of the test piece after immersion is measured under room temperature (20°C). The mass change rate (%) is calculated from the measured masses before and after immersion.

[0115] The upper limit of the mass change rate is more preferably 5.0% by mass, even more preferably 1.0% by mass, and even more preferably 0.5% by mass. The lower limit is not particularly limited, and 0% by mass is most preferred.

[0116] The member of the present disclosure can be manufactured by a manufacturing method including a step of forming a coating containing the carbon material on the surface of the material (a) using, for example, the above-mentioned CVD, sputtering, ion vapor deposition, arc ion plating, or the like, to produce a member in which at least a portion of the surface of the material (a) is laminated with a carbon material. In the above manufacturing method, a DLC film or the like can be formed using the above-mentioned CVD, sputtering, ion vapor deposition, arc ion plating, or the like. The present disclosure also relates to a manufacturing method for manufacturing the member under conditions at or below the temperature at which the material (a) loses 1% by mass due to thermal decomposition. The manufacturing method of the present disclosure preferably includes a step of laminating the carbon material on the surface of the material (a) using CVD, sputtering, ion vapor deposition, or arc ion plating.

[0117] The semiconductor manufacturing related device of the present disclosure is preferably a semiconductor manufacturing related device equipped with the above-described member. By using the member of the present disclosure, excellent chemical resistance can be imparted to the device.

[0118] The semiconductor manufacturing-related device of the present disclosure is preferably one of the semiconductor manufacturing devices and related devices described above. Also, the semiconductor manufacturing-related device of the present disclosure is preferably at least one selected from the group consisting of semiconductor manufacturing devices and related devices for semiconductor manufacturing devices.

[0119] The semiconductor manufacturing equipment is preferably at least one selected from the group consisting of photolithography process equipment, thin film formation / etching / cleaning / drying equipment, inspection / evaluation equipment / manufacturing equipment, resist processing equipment, etching equipment, cleaning / drying equipment, CVD equipment, thin film formation equipment, CMP equipment, processing equipment, aging equipment, and inspection equipment, and the semiconductor manufacturing equipment-related equipment is preferably at least one selected from the group consisting of pure water / chemical equipment, gas equipment, clean room equipment, and manufacturing-related equipment.

[0120] the photolithography process equipment is at least one selected from the group consisting of a coating equipment, a resist stripping equipment, a developing equipment (developer), and a descum equipment; the thin film formation / etching / cleaning / drying equipment is at least one selected from the group consisting of a vacuum deposition equipment, a cleaning equipment, a drying equipment, and a scrub cleaning equipment; the inspection / evaluation equipment / manufacturing equipment is a defect repair equipment; the resist processing equipment is at least one selected from the group consisting of a coating equipment, a developing equipment, a resist stripping equipment, and an ashing equipment; the etching equipment is at least one selected from the group consisting of a dry etching equipment and a wet etching equipment; the cleaning / drying equipment is at least one selected from the group consisting of a wet cleaning equipment, a scrub cleaning equipment, and a drying equipment; the CVD equipment is at least one selected from the group consisting of a high-pressure CVD equipment, a SACVD equipment, a low-pressure CVD equipment, a plasma CVD equipment, a metal CVD equipment, and an ALD equipment; the thin film forming apparatus is at least one selected from the group consisting of a vacuum deposition apparatus, a silicon epitaxial growth apparatus, a compound semiconductor epitaxial apparatus (MOCVD apparatus, MBE apparatus), and a plating apparatus; the CMP apparatus is at least one selected from the group consisting of a CMP apparatus and a CMP cleaning apparatus; the processing apparatus is a bump plating apparatus; the aging apparatus is at least one selected from the group consisting of an aging apparatus, a burn-in apparatus, an IC insertion apparatus, and an IC extraction apparatus; the inspection apparatus is a life test apparatus; the pure water / chemical liquid apparatus is at least one selected from the group consisting of a chemical supply apparatus, a slurry supply apparatus, a chemical purification apparatus, and a waste liquid treatment apparatus; the gas apparatus is at least one selected from the group consisting of a gas generation apparatus, a gas purification apparatus, a gas mixing apparatus, a gas detection apparatus, and an exhaust gas treatment apparatus; the clean room apparatus is at least one selected from the group consisting of a thermal chamber and an environmental test apparatus; The manufacturing-related equipment is preferably at least one selected from the group consisting of jig cleaning / drying equipment, flow rate control equipment, packaging equipment, and liquid / gas measuring equipment.

[0121] Although the embodiments have been described above, it will be understood that various changes in form and details can be made without departing from the spirit and scope of the claims.

[0122] The present disclosure will now be described in more detail with reference to examples, but the present disclosure is not limited to these examples.

[0123] Various physical properties were measured by the following methods.

[0124] <Chemical Resistance Evaluation 1-1> In Chemical Resistance Evaluation 1-1, chemical resistance to acidic chemicals was evaluated by the following method under the test conditions described in Table 1 or 2. The test piece was dried at 60°C for 2 hours. After drying, the mass of the test piece before immersion was measured under room temperature (20°C). The test piece after measurement was completely immersed in a mixed acid (hydrofluoric acid concentration: 50%, nitric acid concentration: 60%) with a concentration ratio (molar ratio) of hydrofluoric acid to nitric acid of 1:5, and held at room temperature (20°C) for 1 day (24 hours) or 1 week (168 hours). After holding, the test piece was washed with pure water, water droplets on the surface were wiped off, and the test piece was dried at 60°C for 12 hours. The mass of the test piece after immersion was measured under room temperature (20°C). The mass change rate (%) was calculated from the measured masses before and after immersion.

[0125] <Chemical Resistance Evaluation 1-2> In Chemical Resistance Evaluation 1-2, chemical resistance to acidic chemicals was evaluated by the following method under the test conditions described in Table 1 or 2. The test specimen was dried at 60°C for 2 hours. After drying, the mass of the test specimen before immersion was measured under room temperature (20°C). The test specimen after measurement was completely immersed in a mixed acid (hydrofluoric acid concentration: 50%, nitric acid concentration: 60%) with a concentration ratio (molar ratio) of hydrofluoric acid to nitric acid of 1:100 and held at room temperature (20°C) for 1 day (24 hours) or 1 week (168 hours). After holding, the test specimen was washed with pure water, water droplets on the surface were wiped off, and the specimen was dried at 60°C for 12 hours. The mass of the test specimen after immersion was measured under room temperature (20°C). The mass change rate (%) was calculated from the measured masses before and after immersion.

[0126] <Chemical Resistance Evaluation 1-3> In Chemical Resistance Evaluation 1-3, chemical resistance to acidic chemicals was evaluated under the test conditions described in Table 1 or 2 by the following method. The test specimen was dried at 60°C for 2 hours. After drying, the mass of the test specimen before immersion was measured at room temperature (20°C). After measurement, the test specimen was completely immersed in SPM (a volumetric blend of concentrated sulfuric acid and hydrogen peroxide solution at a ratio of 1:0.25 to 1) and held at 80°C for 1 day (24 hours). After holding, the test specimen was washed with pure water, water droplets on the surface were wiped off, and the specimen was dried at 60°C for 12 hours. The mass of the test specimen after immersion was measured at room temperature (20°C). The mass change rate (%) was calculated from the measured masses before and after immersion.

[0127] <Chemical Resistance Evaluation 2> In Chemical Resistance Evaluation 2, chemical resistance to basic chemicals was evaluated by the following method under the test conditions shown in Table 1 or 2. The test piece was dried at 60°C for 2 hours. After drying, the mass of the test piece before immersion was measured under room temperature (20°C). After the measurement, the test piece was immersed in TMAH([(CH ３ ) ４ N] ＋ [OH] － The test pieces were completely immersed in a 25% concentration solution at 80°C and held for one week (168 hours). After holding, the test pieces were washed with pure water, water droplets on the surface were wiped off, and the test pieces were dried at 60°C for 12 hours. The mass of the test pieces after immersion was measured under room temperature (20°C). The mass change rate (%) was calculated from the measured masses before and after immersion.

[0128] The material (a) (substrate) and carbon material used in the examples and comparative examples are shown below. (Material (a)) PPS: polyphenylene sulfide, MFR 125 g / 10 min, shape: 10 mm x 50 mm x 6 mm, 1% thermal decomposition temperature 473°C PEEK: polyether ether ketone, MFR 10 g / 10 min, shape: 10 mm x 50 mm x 2 mm, 1% thermal decomposition temperature 553°C (Carbon Materials) Carbon material 1: Genius Coat F (DLC film) manufactured by Nippon ITF Carbon material 2: PH Coating (DLC) manufactured by Kohan Kogyo Co., Ltd.

[0129] Examples 1, 3, 5, and 7 According to the conditions in Table 1, carbon material 1 (Genius Coat F) was coated onto PPS using plasma CVD (60°C to 80°C) to obtain test pieces (laminated members).

[0130] Examples 2, 4, 6, and 8: Test pieces (laminated members) were obtained by coating PPS with carbon material 2 (PH coating (DLC)) using plasma sputtering under the conditions shown in Table 1. The inside of the apparatus was vacuumed → heated → cleaned → Ar sputtered → DLC coated → cooled → released from vacuum, and the DLC coating was performed at 150°C.

[0131] Examples 9, 11, 13, 15, and 17 According to the conditions in Table 2, carbon material 1 (Genius Coat F) was coated onto PEEK using plasma CVD (60°C to 80°C) to obtain test pieces (laminate members).

[0132] Examples 10, 12, 14, 16, and 18: Test pieces (laminated members) were obtained by coating PEEK with carbon material 2 (PH coating (DLC)) using plasma sputtering under the conditions shown in Table 2. The inside of the apparatus was vacuumed → heated → cleaned → Ar sputtered → DLC coated → cooled → released from vacuum, and the DLC coating was performed at 150°C.

[0133] Comparative Examples 1 to 4 PPS was used as the test specimen.

[0134] Comparative Examples 5 to 9 PEEK was used as the test specimen.

[0135]

[0136]

[0137] The laminated members of the examples were suitable for use as members (components) in semiconductor manufacturing related equipment where chemicals are used.

Claims

1. A component in which at least a portion of the surface of material (a) is laminated with a carbon material, said component being at least one selected from the group consisting of building materials, mobility materials, aerospace materials, semiconductor materials, and information and communications materials.

2. The member according to claim 1, wherein the carbon material is at least one material selected from the group consisting of DLC (diamond-like carbon) and diamond.

3. The member according to claim 1, wherein the carbon material is DLC (diamond-like carbon).

4. The member according to any one of claims 1 to 3, wherein the material (a) is at least one selected from the group consisting of resin, rubber, metal and ceramic.

5. The member according to any one of claims 1 to 4, wherein the material (a) is at least one selected from the group consisting of resin and rubber.

6. The member according to any one of claims 1 to 5, wherein the material (a) is at least one selected from the group consisting of polyether ether ketone resin and polyphenylene sulfide.

7. A member according to any one of claims 1 to 6, wherein the temperature at which material (a) loses 1% by mass due to thermal decomposition is 560°C or less.

8. The member according to any one of claims 1 to 7, wherein the coating containing the carbon material has a thickness of 0.01 to 100 µm.

9. The member according to any one of claims 1 to 8, wherein the coating containing the carbon material has a thickness of 0.1 to 10 μm.

10. The member according to any one of claims 1 to 9, which is at least one selected from the group consisting of piping, nozzles, tubes, tanks, containers, joints, valves, pumps, spin chucks, O-rings, packings, gaskets, washers, and sealing materials.

11. The member according to any one of claims 1 to 10, which is a member for semiconductor manufacturing related equipment.

12. The member according to claim 11, wherein the semiconductor manufacturing related equipment is an equipment in which chemicals are used.

13. The chemical is TMAH([(CH ３ ) ４ N] ＋ [OH] － ), sulfuric acid, isopropyl alcohol, hydrofluoric acid, mixed acid of hydrofluoric acid and nitric acid, SPM (Sulfuric Acid Hydrogen Peroxide Mixture), SC1 (NH ４ OH, H ２ O ２ and H ２ O mixture), SC2 (HCl, H ２ O ２ and H ２ 13. The component of claim 12, wherein the acid is at least one selected from the group consisting of a mixture of ammonium hydroxide, ...

14. The member according to claim 12, wherein the chemical is at least one selected from the group consisting of silicon-based gas, arsenic-based gas, phosphorus-based gas, boron-based gas, metal hydride gas, metal alkyl gas, halogenated hydrocarbon gas, halogen-halide gas, nitrogen oxide gas, hydrogen sulfide gas, ammonia gas, trimethylamine gas, propane gas, trimethylaluminum gas, hydrogen gas, helium gas, nitrogen gas, oxygen gas, argon gas, and carbon dioxide gas.

15. The semiconductor manufacturing related equipment member according to any one of claims 12 to 14, wherein at least a portion of the surface that comes into contact with the chemicals is laminated with the carbon material.

16. The component for semiconductor manufacturing related equipment is a component for semiconductor manufacturing related equipment in which chemicals are used within the equipment, and at least a portion of the surface that comes into contact with the chemicals is laminated with the carbon material.

17. A member according to any one of claims 1 to 16, wherein the mass change rate in the following chemical resistance evaluation is 50.0 mass% or less. (Chemical Resistance Evaluation) A test piece of the member (a test piece having a coating containing a carbon material laminated over the entire surface of material (a), material (a) size: 10 mm x 50 mm x 6 mm, coating thickness: 0.7 μm or 2 μm) is dried at 60°C for 2 hours. After drying, the mass of the test piece before immersion is measured under room temperature (20°C). After measurement, the test piece is completely immersed in a mixed acid of hydrofluoric acid and nitric acid with a concentration ratio (molar ratio) of 1:5 (hydrofluoric acid concentration: 50%; nitric acid concentration: 60%) and held at room temperature (20°C) for one week (168 hours). After holding, the test piece is washed with pure water, water droplets on the surface are wiped off, and the test piece is dried at 60°C for 12 hours, and the mass of the test piece after immersion is measured under room temperature (20°C) conditions. The mass change rate (%) is calculated from the measured masses before and after immersion.

18. A member according to any one of claims 1 to 17, wherein the mass change rate in the following chemical resistance evaluation is 50.0 mass% or less. (Chemical Resistance Evaluation) A test piece of the member (a test piece having a coating containing a carbon material laminated over the entire surface of material (a), material (a) size: 10 mm x 50 mm x 2 mm, coating thickness: 0.8 μm or 1.8 μm) is dried at 60°C for 2 hours. After drying, the mass of the test piece before immersion is measured under room temperature (20°C). After measurement, the test piece is completely immersed in a mixed acid with a concentration ratio (molar ratio) of hydrofluoric acid to nitric acid of 1:100 (hydrofluoric acid concentration: 50%; nitric acid concentration: 60%) and held at room temperature (20°C) for one week (168 hours). After holding, the test piece is washed with pure water, water droplets on the surface are wiped off, and the test piece is dried at 60°C for 12 hours, and the mass of the test piece after immersion is measured under room temperature (20°C) conditions. The mass change rate (%) is calculated from the measured masses before and after immersion.

19. A method for manufacturing a member according to any one of claims 1 to 18, wherein the member is manufactured under conditions of a temperature at which the material (a) loses 1% by mass due to thermal decomposition or lower.

20. A method for manufacturing a member according to claim 19, comprising the step of depositing said carbon material on the surface of said material (a) by CVD, sputtering, ion vapor deposition, or arc ion plating.

21. A semiconductor manufacturing related device equipped with a member according to any one of claims 1 to 18.

22. The semiconductor manufacturing related equipment according to claim 21, which is at least one selected from the group consisting of semiconductor manufacturing equipment and equipment related to semiconductor manufacturing equipment.

23. The semiconductor manufacturing related equipment according to claim 22, wherein the semiconductor manufacturing equipment is at least one selected from the group consisting of photolithography process equipment, thin film formation / etching / cleaning / drying equipment, inspection / evaluation equipment / manufacturing equipment, resist processing equipment, etching equipment, cleaning / drying equipment, CVD equipment, thin film formation equipment, CMP equipment, processing equipment, aging equipment, and inspection equipment, and the semiconductor manufacturing equipment related equipment is at least one selected from the group consisting of pure water / chemical equipment, gas equipment, clean room equipment, and manufacturing related equipment.

24. The photolithography process equipment is at least one selected from the group consisting of a coating equipment, a resist stripping equipment, a developing equipment (developer), and a descum equipment; the thin film formation / etching / cleaning / drying equipment is at least one selected from the group consisting of a vacuum deposition equipment, a cleaning equipment, a drying equipment, and a scrub cleaning equipment; the inspection / evaluation equipment / manufacturing equipment is a defect repair equipment; the resist processing equipment is at least one selected from the group consisting of a coating equipment, a developing equipment, a resist stripping equipment, and an ashing equipment; the etching equipment is at least one selected from the group consisting of a dry etching equipment and a wet etching equipment; the cleaning / drying equipment is at least one selected from the group consisting of a wet cleaning equipment, a scrub cleaning equipment, and a drying equipment; the CVD equipment is at least one selected from the group consisting of a high-pressure CVD equipment, a SACVD equipment, a low-pressure CVD equipment, a plasma CVD equipment, a metal CVD equipment, and an ALD equipment; the thin film forming apparatus is at least one selected from the group consisting of a vacuum deposition apparatus, a silicon epitaxial growth apparatus, a compound semiconductor epitaxial apparatus (MOCVD apparatus, MBE apparatus), and a plating apparatus; the CMP apparatus is at least one selected from the group consisting of a CMP apparatus and a CMP cleaning apparatus; the processing apparatus is a bump plating apparatus; the aging apparatus is at least one selected from the group consisting of an aging apparatus, a burn-in apparatus, an IC insertion apparatus, and an IC extraction apparatus; the inspection apparatus is a life test apparatus; the pure water / chemical liquid apparatus is at least one selected from the group consisting of a chemical supply apparatus, a slurry supply apparatus, a chemical purification apparatus, and a waste liquid treatment apparatus; the gas apparatus is at least one selected from the group consisting of a gas generation apparatus, a gas purification apparatus, a gas mixing apparatus, a gas detection apparatus, and an exhaust gas treatment apparatus; the clean room apparatus is at least one selected from the group consisting of a thermal chamber and an environmental test apparatus; 24. The semiconductor manufacturing related equipment according to claim 23, wherein the manufacturing related equipment is at least one selected from the group consisting of a jig cleaning / drying device, a flow control device, a packaging device, and a liquid / gas measuring device.

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