Substrate processing device

Abstract

One exemplary embodiment of the present invention provides a substrate processing device. This substrate processing device includes a processing chamber, a substrate support table, a plurality of supply pipes, one or more recovery pipes, one or more flow rate regulators, and a control unit. The substrate support table includes an upper surface, a lower surface, and one or more partition walls. The one or more partition walls and the lower surface define one or more spaces. Each of the plurality of supply pipes has an opening end. The opening end is disposed in a corresponding space among the one or more spaces. The one or more recovery pipes are respectively connected to the one or more spaces. The one or more partition walls include an outer peripheral wall. The one or more spaces include one space in which the opening end of each of two or more supply pipes among the plurality of supply pipes is disposed.

Description

Substrate Processing Equipment

[0001] SUMMARY OF THE INVENTION An exemplary embodiment of the present disclosure relates to a substrate processing apparatus.

[0002] A substrate processing apparatus may include a substrate support stage capable of controlling the temperature of a substrate placed thereon. The substrate processing apparatus described in Patent Document 1 listed below controls the temperature of the substrate by supplying a heat transfer medium adjusted to a first temperature and a heat transfer medium adjusted to a second temperature higher than the first temperature to the substrate support stage.

[0003] JP 2016-12593 A

[0004] The present disclosure provides techniques for controlling the temperature of a substrate.

[0005] In one exemplary embodiment, a substrate processing apparatus is provided. The substrate processing apparatus includes a processing chamber, a substrate support pedestal, a plurality of supply pipes, one or more return pipes, one or more flow regulators, and a controller. The substrate support pedestal is disposed within the processing chamber. The substrate support pedestal includes an upper surface, a lower surface, and one or more partition walls. The upper surface supports a substrate placed thereon. The lower surface is the surface opposite the upper surface. The one or more partition walls extend downward from the lower surface. The one or more partition walls and the lower surface define one or more spaces. The plurality of supply pipes each have an open end. The open end opens toward the lower surface to supply a heat transfer medium to the lower surface. The open end is disposed within a corresponding one of the one or more spaces. The one or more return pipes are connected to one or more spaces, respectively, to recover the heat transfer medium from the one or more spaces. The one or more flow regulators are connected to the plurality of supply pipes. The controller is configured to control the one or more flow regulators to adjust the flow rate of the heat transfer medium supplied to the plurality of supply pipes. The one or more partition walls include an outer peripheral wall. The outer peripheral wall separates an interior of the substrate support pedestal from an exterior of the substrate support pedestal. The one or more spaces include one space in which each open end of two or more supply pipes of the plurality of supply pipes is disposed.

[0006] According to one exemplary embodiment, a technique for controlling the temperature of a substrate is provided.

[0007] 6A is a diagram for explaining an example of the configuration of a plasma processing system according to an exemplary embodiment. FIG. 6B is a diagram for explaining an example of the configuration of a capacitively coupled plasma processing apparatus according to an exemplary embodiment. FIG. 6C is an enlarged cross-sectional view of a portion of a substrate support pedestal according to an exemplary embodiment. FIG. 6D is an exploded perspective view of a substrate support pedestal according to an exemplary embodiment. FIG. 6E is a perspective view of a heat exchanger according to an exemplary embodiment. FIG. 6A is a plan view of a cell portion of an exemplary heat exchanger, and FIG. 6B is a perspective view of a cell portion of an exemplary heat exchanger. FIG. 6C is a cross-sectional view of a substrate support pedestal according to an exemplary embodiment. FIG. 6D is a cross-sectional view of a substrate support pedestal according to another exemplary embodiment. FIG. 6F is a cross-sectional view of a substrate support pedestal according to yet another exemplary embodiment. FIG. 6G is a cross-sectional view of a substrate support pedestal according to yet another exemplary embodiment. FIG. 6H is a diagram for explaining an example of the configuration of a plasma processing system according to an exemplary embodiment. FIG. 6H is a diagram for explaining an example of the configuration of a capacitively coupled plasma processing apparatus according to an exemplary embodiment. FIG. 6H is an enlarged cross-sectional view of a portion of a substrate support pedestal according to another exemplary embodiment.

[0008] Various exemplary embodiments will be described in detail below with reference to the drawings, in which the same or equivalent parts are designated by the same reference numerals.

[0009] Various exemplary embodiments will be described in detail below with reference to the drawings, in which the same or equivalent parts are designated by the same reference numerals.

[0010] FIG. 1 is a diagram illustrating an example configuration of a substrate processing system. In one embodiment, the substrate processing system includes a plasma processing apparatus 1 and a control unit 2. The plasma processing apparatus 1 is an example of a substrate processing apparatus, and the substrate processing system is, in one example, a plasma processing system. The plasma processing apparatus 1 includes a processing chamber 10, a substrate support unit 11, and a plasma generation unit 14. The processing chamber 10 has a plasma processing space. The processing chamber 10 also has at least one gas supply port for supplying at least one processing gas to the plasma processing space and at least one gas exhaust port for exhausting gas from the plasma processing space. The gas supply port is connected to a gas supply unit 20 (described later), and the gas exhaust port is connected to an exhaust system 40 (described later). The substrate support unit 11 is disposed in the plasma processing space and has a substrate support surface for supporting a substrate.

[0011] The plasma generating unit 14 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space may be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), electron-cyclotron-resonance plasma (ECR plasma), helicon wave plasma (HWP), surface wave plasma (SWP), or the like. Various types of plasma generators may be used, including alternating current (AC) plasma generators and direct current (DC) plasma generators. In one embodiment, the AC signal (AC power) used in the AC plasma generator has a frequency in the range of 100 kHz to 10 GHz. Thus, AC signals include radio frequency (RF) signals and microwave signals. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0012] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform various processes described in this disclosure. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 may be implemented by, for example, a computer 2a. The processing unit 2a1 may be configured to read a program from the storage unit 2a2 and execute the read program to perform various control operations. This program may be stored in the storage unit 2a2 in advance or may be acquired via a medium when needed. The acquired program is stored in the storage unit 2a2 and read from the storage unit 2a2 by the processing unit 2a1 for execution. The medium may be various storage media readable by the computer 2a or a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include a random access memory (RAM), a read-only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN).

[0013] The following describes a configuration example of a capacitively coupled plasma processing apparatus as an example of the plasma processing apparatus 1. Fig. 2 is a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus.

[0014] The capacitively coupled plasma processing apparatus 1 includes a processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support 11 and a gas inlet. The gas inlet is configured to introduce at least one processing gas into the processing chamber 10. The gas inlet includes a showerhead 13. The substrate support 11 is disposed within the processing chamber 10. The showerhead 13 is disposed above the substrate support 11. In one embodiment, the showerhead 13 forms at least a portion of the ceiling of the processing chamber 10. The processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, a sidewall 10a of the processing chamber 10, and the substrate support 11. The processing chamber 10 is grounded. The showerhead 13 and the substrate support 11 are electrically insulated from the housing of the processing chamber 10.

[0015] The substrate support part 11 includes a substrate support pedestal 12 and a ring assembly 112. The substrate support pedestal 12 has a central region 12a for supporting a substrate W and an annular region 12b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 12b of the substrate support pedestal 12 surrounds the central region 12a of the substrate support pedestal 12 in a planar view. The substrate W is disposed on the central region 12a of the substrate support pedestal 12, and the ring assembly 112 is disposed on the annular region 12b of the substrate support pedestal 12 so as to surround the substrate W on the central region 12a of the substrate support pedestal 12. Therefore, the central region 12a is also called a substrate support surface for supporting the substrate W, and the annular region 12b is also called a ring support surface for supporting the ring assembly 112.

[0016] In one embodiment, the substrate support pedestal 12 includes a base 120 and an electrostatic chuck 121. The base 120 includes a conductive member. The conductive member of the base 120 may function as a lower electrode. The electrostatic chuck 121 is disposed on the base 120. The electrostatic chuck 121 includes a ceramic member 121a and an electrostatic electrode 121b disposed within the ceramic member 121a. The ceramic member 121a has a central region 12a. In one embodiment, the ceramic member 121a also has an annular region 12b. Note that the annular region 12b may also be provided by another member surrounding the electrostatic chuck 121, such as an annular electrostatic chuck or an annular insulating member. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 121 and the annular insulating member. Furthermore, at least one RF / DC electrode coupled to an RF power supply 31 and / or a DC power supply 32 (described below) may be disposed within the ceramic member 121a. In this case, at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or a DC signal, which will be described later, is supplied to at least one RF / DC electrode, the RF / DC electrode is also called a bias electrode. Note that the conductive member of the base 120 and at least one RF / DC electrode may function as multiple lower electrodes. Alternatively, the electrostatic electrode 121b may function as a lower electrode. Therefore, the substrate support 11 includes at least one lower electrode.

[0017] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive or insulating material, and the cover rings are formed of an insulating material.

[0018] The showerhead 13 is configured to introduce at least one process gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c. The process gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c. The showerhead 13 also includes at least one upper electrode. In addition to the showerhead 13, the gas inlet may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 10a.

[0019] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from a corresponding gas source 21 to the showerhead 13 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply unit 20 may include at least one flow modulation device that modulates or pulses the flow rate of the at least one process gas.

[0020] The power supply 30 includes an RF power supply 31 coupled to the processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This causes a plasma to be formed from at least one processing gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of the plasma generating unit 14. Furthermore, by supplying a bias RF signal to the at least one lower electrode, a bias potential is generated on the substrate W, thereby attracting ion components in the formed plasma to the substrate W.

[0021] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0022] The second RF generator 31b is coupled to at least one lower electrode via at least one impedance matching circuit and is configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generator 31b may be configured to generate multiple bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0023] The power supply 30 may also include a DC power supply 32 coupled to the processing chamber 10. The DC power supply 32 includes a first DC generator 32a and a second DC generator 32b. In one embodiment, the first DC generator 32a is connected to the at least one lower electrode and configured to generate a first DC signal. The generated first DC signal is applied to the at least one lower electrode. In one embodiment, the second DC generator 32b is connected to the at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to the at least one upper electrode.

[0024] In various embodiments, the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a rectangular, trapezoidal, triangular, or combination thereof pulse waveform. In one embodiment, a waveform generator for generating the sequence of voltage pulses from the DC signal is connected between the first DC generator 32a and at least one lower electrode. Thus, the first DC generator 32a and the waveform generator constitute a voltage pulse generator. When the second DC generator 32b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulses may have either positive or negative polarity. Furthermore, the sequence of voltage pulses may include one or more positive voltage pulses and one or more negative voltage pulses within one period. The first and second DC generating units 32a and 32b may be provided in addition to the RF power supply 31, or the first DC generating unit 32a may be provided instead of the second RF generating unit 31b.

[0025] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is regulated by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0026] The substrate support pedestal 12 will now be described in more detail with reference to Figure 3. The substrate support pedestal 12 is disposed within the processing chamber 10. Figure 3 is an enlarged cross-sectional view of a portion of the substrate support pedestal according to one exemplary embodiment.

[0027] The substrate support table 12 has a substantially disk-like shape. As shown in FIG. 3 , the substrate support table 12 includes an upper surface 15, a lower surface 16, and one or more partition walls 17. The upper surface 15 supports the substrate W placed thereon. The upper surface 15 includes a central region 12a and an annular region 12b. In the example shown in FIG. 3 , the central region 12a is the upper surface of the electrostatic chuck 121, and the annular region 12b is a peripheral region of the upper surface of the base 120. The lower surface 16 is the surface opposite the upper surface 15. One or more partition walls 17 extend downward from the lower surface 16. The one or more partition walls 17 and the lower surface 16 define one or more spaces 18. The one or more partition walls 17 include an outer peripheral wall 17a. The outer peripheral wall 17a separates the interior of the substrate support table 12 from the exterior of the substrate support table 12.

[0028] In one embodiment, the one or more partition walls 17 may include a plurality of partition walls 17. The lower surface 16 and the plurality of partition walls 17 may define a plurality of spaces 18 that are separated from one another as one or more spaces 18. Unless otherwise specified below, an example in which the lower surface 16 and the plurality of partition walls 17 define a plurality of spaces 18 will be described.

[0029] The plasma processing apparatus 1 includes a plurality of supply pipes 50 and one or more recovery pipes 60. In one embodiment, the one or more recovery pipes 60 may include a plurality of recovery pipes 60. The plurality of supply pipes 50 each have an open end 50a. The plurality of recovery pipes 60 each have an open end 60a. The open ends 50a open toward the lower surface 16 to supply the heat transfer medium to the lower surface 16. The open ends 50a are disposed within corresponding spaces 18 among the plurality of spaces 18. Each of the plurality of spaces 18 includes one space 18 in which the open ends 50a of two or more supply pipes 50 among the plurality of supply pipes 50 are disposed. The plurality of recovery pipes 60 are connected to the plurality of spaces 18, respectively, to recover the heat transfer medium from the plurality of spaces 18. The plurality of recovery pipes 60 each have an open end 60a. Each of the plurality of recovery pipes 60 may include an extension 60b. The extension 60b is continuous from the open end 60a. The expansion portion 60b widens so that the inner dimensions of each of the plurality of recovery pipes 60 are maximized at the open end 60a.

[0030] 4 is an exploded perspective view of a substrate support according to one exemplary embodiment. As shown in FIG. 4, the base 120 has a substantially disk shape. The base 120 may include a main portion 120a and a flange portion 120b. The main portion 120a is a portion having a substantially circular planar shape. The flange portion 120b is a portion having an annular planar shape. The flange portion 120b is continuous with the main portion 120a so as to surround the outer periphery of the main portion 120a. The base 120 may be made of metal.

[0031] The base 120 may be made of stainless steel (e.g., SUS304). Stainless steel has low thermal conductivity, which prevents heat from the electrostatic chuck 121 from escaping through the base 120. The base 120 may be made of aluminum. Aluminum has low resistivity, which reduces power loss in the base 120 when the base 120 is used as a high-frequency electrode. The base 120 may be made of an alloy or metal matrix composite (MMC) primarily made of titanium, molybdenum, or chromium.

[0032] 4 , the upper surface 15 of the substrate support pedestal 12 includes a plurality of zones 15z. The plurality of zones 15z may include a plurality of zones arranged in a radial direction. In one example, the plurality of zones 15z may include a first zone 151, a second zone 152, and a third zone 153. The first zone 151 intersects with the central axis of the substrate support pedestal 12. The second zone 152 extends to surround the first zone 151. The third zone 153 extends to surround the second zone 152. The plurality of zones 15z may include a plurality of zones arranged in a circumferential direction. Some of the plurality of zones 15z may be arranged in a radial direction, and other portions may be arranged in a circumferential direction. In one example, the plurality of zones 15z may include the first zone 151, a second group of zones, and a third group of zones. The second group of zones includes a plurality of zones arranged in the circumferential direction so as to surround the first zone 151. The third group of zones includes a plurality of zones arranged in the circumferential direction so as to surround the second group of zones.

[0033] In one embodiment, the lower surface 16 of the substrate support pedestal 12 includes one or more lower surface regions 16z, each of which extends below a corresponding one of the multiple zones 15z (see FIG. 3 ). In one example, the lower surface 16 of the substrate support pedestal 12 may include a first lower surface region 161, a second lower surface region 162, and a third lower surface region 163. The first lower surface region 161 intersects with the central axis of the substrate support pedestal 12. The first lower surface region 161 extends below the first zone 151. The second lower surface region 162 and the third lower surface region 163 each have an annular shape surrounding the first lower surface region 161 and are concentric with the central axis of the substrate support pedestal 12. The second lower surface region 162 extends below the second zone 152. The third lower surface region 163 extends below the third zone 153. The third lower surface region 163 has a ring shape that surrounds the second lower surface region 162 .

[0034] In one embodiment, the plurality of supply pipes 50 constitute a plurality of supply pipe groups 50g corresponding to the plurality of zones 15z, respectively. Each of the plurality of supply pipe groups 50g includes at least one supply pipe 50 having an open end 50a that opens toward a corresponding one of the plurality of lower surface regions 16z. The plurality of return pipes 60 constitute a plurality of return pipe groups 60g corresponding to the plurality of supply pipe groups 50g, respectively.

[0035] In one example, the plurality of supply pipes 50 constitute a first supply pipe group 501, a second supply pipe group 502, and a third supply pipe group 503 corresponding to the first zone 151, the second zone 152, and the third zone 153, respectively. The first supply pipe group 501 includes at least one supply pipe 50 having an open end 50a that opens toward the first lower surface region 161. The second supply pipe group 502 includes at least one supply pipe 50 having an open end 50a that opens toward the second lower surface region 162. The third supply pipe group 503 includes at least one supply pipe 50 having an open end 50a that opens toward the third lower surface region 163. The multiple recovery pipes 60 form a first recovery pipe group 601, a second recovery pipe group 602, and a third recovery pipe group 603 corresponding to the first lower surface area 161, the second lower surface area 162, and the third lower surface area 163, respectively (see Figure 3).

[0036] FIG. 5 is a perspective view of a heat exchanger according to an exemplary embodiment. In one embodiment, a plurality of supply pipes 50 and a plurality of return pipes 60 may constitute a heat exchanger 19. A base 120 may be mounted on the heat exchanger 19. The heat exchanger 19 may include a main portion 19a and a flange portion 19b. The main portion 19a is a region having a substantially circular planar shape. The flange portion 19b is a region having an annular planar shape and is continuous with the main portion 19a so as to surround the outer periphery of the main portion 19a. As shown in FIG. 3, the flange portion 120b of the base 120 is disposed on the flange portion 19b of the heat exchanger 19. An O-ring 12e is sandwiched between the flange portion 19b and the flange portion 120b. The O-ring 12e is pressed between the flange portion 19b and the flange portion 120b to seal the gap between the flange portion 19b and the flange portion 120b.

[0037] FIG. 6A is a plan view of an exemplary heat exchanger cell portion, and FIG. 6B is a perspective view of the exemplary heat exchanger cell portion. A main portion 19a of the heat exchanger 19 provides multiple cell portions 19c. The multiple cell portions 19c are disposed below the lower surface 16 of the substrate support table 12. Each of the multiple cell portions 19c is composed of at least one corresponding supply pipe 50 among the multiple supply pipes 50 and at least one corresponding return pipe 60 among the multiple return pipes 60. The number of supply pipes 50 and the number of return pipes 60 included in each cell portion 19c may be one or more. Furthermore, the number of supply pipes 50 and the number of return pipes 60 do not have to match. For example, the cell portion 19c may be composed of multiple supply pipes 50 and one return pipe 60. In one embodiment, the extension portions 60b of adjacent return pipes 60 among the multiple return pipes 60 are connected to each other at their ends. Each extension 60b may form the bottom surface of the main portion 19a.

[0038] Each of the plurality of cells 19c may have a generally rectangular planar shape in plan view that increases in width from the center of the heat exchanger 19 toward the outside. Each of the plurality of cells 19c provides a recess 19d that is generally rectangular in plan view. The recesses 19d provided by the plurality of cells 19c are defined by extensions 60b. Note that the planar shape of the plurality of cells 19c is not limited to a rectangle, and may be a circle or a polygon such as a triangle or hexagon.

[0039] In each cell 19c, the supply pipe 50 extends so that its central axis coincides with the central axis of the recess 19d. In the heat exchanger 19, the multiple supply pipes 50 extend parallel to one another. The inner surfaces defining each of the multiple recesses 19d surround the outer peripheral surfaces of the corresponding supply pipes 50. In other words, the expansion section 60b surrounds the outer peripheral surfaces of the supply pipes 50 corresponding to the recovery pipes 60 of the expansion section 60b.

[0040] The heat exchanger 19 may be formed from a material containing resin, ceramic, or metal as a main component. The heat exchanger 19 may be formed from a material having low thermal conductivity, such as ceramic or resin, in order to suppress the influence of adjacent cell portions 19c. The heat exchanger 19 may be formed from a different material in part to partially change the strength and / or thermal conductivity of the heat exchanger 19. The heat exchanger 19 may be formed from the same material as the base 120. The base 120 and the heat exchanger 19 may be integrally formed using, for example, a 3D printer.

[0041] Fig. 7 is a cross-sectional view of the substrate support pedestal according to one example embodiment. Fig. 7 is a cross-sectional view of the substrate support pedestal 12 taken along line VII-VII shown in Fig. 4. The cross section of Fig. 7 is along the lower surface 16 of the substrate support pedestal 12. In the embodiment shown in Fig. 7, the plurality of partitions 17 include one or more cylindrical partitions 17b located inside the outer peripheral wall 17a.

[0042] In one example, the one or more cylindrical partition walls 17b include two cylindrical partition walls 171 and 172 as the multiple cylindrical partition walls 17b. The cylindrical partition wall 172 extends to surround the cylindrical partition wall 171. The lower surface 16 and the cylindrical partition wall 171 define a space 18a. The space 18a intersects with the central axis of the substrate support table 12. The lower surface 16, the cylindrical partition wall 171, and the cylindrical partition wall 172 define a space 18b. The space 18b surrounds the space 18a. Each of the multiple plate-like partition walls 17c is interposed between its inner space and its outer space. The cylindrical partition wall 171 is interposed between the inner space 18a and the outer space 18b of the multiple spaces 18. The lower surface 16, the cylindrical partition wall 172, and the outer peripheral wall 17a define a space 18c. The cylindrical partition wall 172 is interposed between an inner space 18b and an outer space 18c of the plurality of spaces 18.

[0043] 7 , each of the one or more cylindrical partition walls 17b extends downward from a portion between two adjacent lower surface regions 16z among the plurality of lower surface regions 16z. The cylindrical partition wall 171 extends downward from a portion between adjacent first lower surface region 161 and second lower surface region 162. The cylindrical partition wall 172 extends downward from a portion between adjacent second lower surface region 162 and third lower surface region 163.

[0044] 8 is a cross-sectional view of a substrate support table according to another exemplary embodiment. Fig. 8 shows a cross-sectional view of a substrate support table 12A. In the embodiment shown in Fig. 8, the partition walls 17 include a plurality of plate-shaped partition walls 17c located inside an outer peripheral wall 17a. The plate-shaped partition walls 17c extend in radial directions from the central axis of the substrate support table 12 and are arranged along the circumferential direction with respect to the central axis.

[0045] In one example, the plurality of plate-like partition walls 17c includes six plate-like partition walls 173. The plurality of plate-like partition walls 17c may be arranged at equal angles in the circumferential direction relative to the central axis. Two of the plurality of plate-like partition walls 17c that are adjacent in the circumferential direction and the lower surface 16 define a plurality of spaces 18d. Each of the plurality of spaces 18d has a fan shape when viewed from the direction along the central axis. The plurality of spaces 18d are arranged in the circumferential direction relative to the central axis. Each of the plurality of plate-like partition walls 17c is interposed between two of the plurality of spaces 18d on either side of it in the circumferential direction.

[0046] 9 is a cross-sectional view of a substrate support table according to yet another exemplary embodiment. FIG. 9 shows a cross-sectional view of a substrate support table 12B. In the embodiment shown in FIG. 9, the plurality of partition walls 17 include one or more cylindrical partition walls 17b and a plurality of plate-like partition walls 17d. The one or more cylindrical partition walls 17b have a cylindrical shape and are located inside the outer peripheral wall 17a. In one example, the one or more cylindrical partition walls 17b include a cylindrical partition wall 171.

[0047] In one example, the plurality of plate-like partition walls 17d include six plate-like partition walls 174. The plurality of plate-like partition walls 17d extend radially with respect to the central axis of the substrate support table 12 between the cylindrical partition wall 171 and the outer peripheral wall 17a and are arranged along the circumferential direction. The plurality of plate-like partition walls 17d connect the cylindrical partition wall 171 and the outer peripheral wall 17a. The plurality of plate-like partition walls 17d may be arranged at equal angles with respect to the central axis along the circumferential direction.

[0048] In one embodiment, the lower surface 16, the cylindrical partition wall 171, the outer peripheral wall 17a, and the plate-like partition wall 17d define a plurality of spaces 18e. The spaces 18e are arranged in a circumferential direction relative to the central axis. In one example, each of the spaces 18e has an annular sector shape. The cylindrical partition wall 171 is interposed between the inner spaces 18a and the outer spaces 18e of the spaces 18. Each of the plate-like partition walls 17d is interposed between two spaces 18e on either side of it in the circumferential direction. In the embodiment shown in FIG. 9 , the cylindrical partition wall 171 extends downward from a portion of the plurality of lower surface regions 16z between the first lower surface region 161 and the second lower surface region 162. The first lower surface region 161 is a lower surface region that intersects with the central axis of the substrate support table 12. The second lower surface region 162 is an annular lower surface region adjacent to the first lower surface region 161 .

[0049] 10 is a cross-sectional view of a substrate support pedestal according to yet another exemplary embodiment. FIG. 10 shows a cross-sectional view of a substrate support pedestal 12C. In the embodiment shown in FIG. 10, the one or more partition walls 17 include only an outer peripheral wall 17a. The lower surface 16 and the outer peripheral wall 17a define a single space 18f. The open ends 50a of two or more of the multiple supply pipes 50 are disposed within the single space 18f.

[0050] Reference will now be made to FIG. 11 . FIG. 11 is a diagram schematically illustrating a heat transfer medium circulation supply system in a substrate processing apparatus according to one exemplary embodiment. In one example, a heat transfer medium circulation device C is connected to a plurality of supply pipes 50 and at least one recovery pipe 60. For example, the circulation device C is a chiller unit. The circulation device C adjusts the temperature of the heat transfer medium. The circulation device C is provided outside the processing chamber 10. The heat transfer medium is supplied from the circulation device C to the plurality of supply pipes 50. The heat transfer medium supplied to the lower surface 16 from the plurality of supply pipes 50 is recovered by at least one recovery pipe 60 (see FIG. 3 ). The heat transfer medium recovered by the recovery pipe 60 is returned to the circulation device C.

[0051] The plasma processing apparatus 1 includes one or more flow rate regulators B1. The one or more flow rate regulators B1 are connected to a plurality of supply pipes 50. The control unit 2 controls the apertures of the one or more flow rate regulators B1 to adjust the flow rates of the heat transfer medium supplied to the plurality of supply pipes 50. As an example, the flow rate regulator B1 is an electromagnetic valve. The plasma processing apparatus 1 may also include one or more flow meters F1. The one or more flow meters F1 are connected to the plurality of supply pipes 50. For example, the control unit 2 controls the apertures of the one or more flow rate regulators B1 based on flow rate information obtained from the one or more flow meters F1.

[0052] In the plasma processing apparatus 1, the flow rate of the heat transfer medium supplied to the plurality of supply pipes 50 is adjusted to adjust the flow rate of the heat transfer medium supplied to the lower surface 16 of the substrate support table 12. The temperature of the substrate W on the substrate support table 12 changes depending on the flow rate of the heat transfer medium supplied to the lower surface 16. Therefore, the plasma processing apparatus 1 makes it possible to control the temperature of the substrate W.

[0053] In one embodiment, the plasma processing apparatus 1 includes a plurality of common supply pipes 51 and a plurality of common recovery pipes 61. The plurality of common supply pipes 51 are connected to a plurality of supply pipe groups 50g, respectively. The plurality of common recovery pipes 61 are connected to a plurality of recovery pipe groups 60g, respectively. In one embodiment, the one or more flow rate adjusters B1 include a plurality of flow rate adjusters B1. In one embodiment, the one or more flow meters F1 include a plurality of flow meters F1.

[0054] The multiple common supply pipes 51 are connected between the circulation device C and a corresponding one of the multiple flow rate adjusters B1. Each of the multiple common supply pipes 51 is connected to a corresponding one of the multiple supply pipe groups 50g via a corresponding one of the multiple flow rate adjusters B1. The multiple common recovery pipes 61 are connected to the circulation device C. Each of the multiple common recovery pipes 61 is connected to a corresponding one of the multiple recovery pipe groups 60g. The multiple flow meters F1 measure the flow rate of the heat transfer medium flowing through the multiple common supply pipes 51. The controller 2 can control the opening degree of the corresponding flow rate adjuster B1 based on flow rate information obtained from each of the multiple flow meters F1. In this embodiment, the flow rate of the heat transfer medium is adjusted for each of the multiple zones 15z on the upper surface 15 of the substrate support table 12. Therefore, it is possible to individually control the temperatures of multiple regions of the substrate W located on the multiple zones 15z.

[0055] In one embodiment, the plasma processing apparatus 1 includes a common supply line 52, a common recovery line 62, and a bypass flow rate adjuster B2. The common supply line 52 is connected to a plurality of common supply pipes 51. The common supply line 52 is connected between the circulation device C and each of the plurality of common supply pipes 51. The common recovery line 62 is connected to a plurality of common recovery pipes 61. The common recovery line 62 is connected between the circulation device C and each of the plurality of common recovery pipes 61. The bypass flow rate adjuster B2 is connected between the common supply line 52 and the common recovery line 62. That is, a bypass flow path 82 including the bypass flow rate adjuster B2 is connected between the common supply line 52 and the common recovery line 62. As an example, the bypass flow rate adjuster B2 is an electromagnetic valve. A flow meter F2 may be provided in the bypass flow path 82.

[0056] Each of the plurality of flow rate regulators B1 is configured to adjust the flow rate of the heat transfer medium supplied to one of the plurality of supply pipe groups 50g by adjusting its aperture. The supply pipe group 50g is a supply pipe group 50g for a corresponding one of the plurality of zones 15z among the plurality of supply pipe groups 50g. The control unit 2 is configured to control the aperture of each of the plurality of flow rate regulators B1 and also to control the aperture of the bypass flow rate regulator B2 so as to maintain the total flow rate of the heat transfer medium supplied to the plurality of common supply pipes 51 and the heat transfer medium bypassed from the common supply line 52 to the common recovery line 62. For example, the control unit 2 adjusts the aperture of each of the plurality of flow rate regulators B1 and the aperture of the bypass flow rate regulator B2 based on flow rate information obtained from each of the plurality of flow meters F1 and flow meters F2.

[0057] In this embodiment, even if the flow rate of the heat transfer medium supplied to one of the multiple zones 15z is changed, the flow rate of the heat transfer medium bypassed from the common supply line 52 to the common recovery line 62 is adjusted so as to maintain the total flow rate of the heat transfer medium. As a result, a change in the flow rate of the heat transfer medium supplied to one of the multiple zones 15z does not affect the flow rates of the heat transfer medium supplied to the other zones. Therefore, in this embodiment, the temperature of multiple regions of the substrate W located above each of the multiple zones 15z can be independently controlled.

[0058] Reference will now be made to Figures 12 and 13. Figure 12 is a diagram schematically illustrating a heat transfer medium circulating supply system in a substrate processing apparatus according to another exemplary embodiment. Figure 13(a) is a graph illustrating an example of the relationship between time and the flow rate of the heat transfer medium in the embodiment of Figure 12. Figure 13(b) is a graph illustrating an example of the relationship between time and the temperature of the substrate in the embodiment of Figure 12. Differences between the embodiment of Figure 12 and the embodiment of Figure 11 will now be described.

[0059] The plasma processing apparatus 1A shown in FIG. 12 is another example of a substrate processing apparatus. The plasma processing apparatus 1A includes multiple bypass flow rate regulators B2. Each of the multiple bypass flow rate regulators B2 is connected between one supply pipe group 50g and one recovery pipe group 60g. In one example, each of the multiple bypass flow rate regulators B2 is disposed in a bypass flow path 81 connecting one supply pipe group 50g and one recovery pipe group 60g. The one supply pipe group 50g is the supply pipe group 50g for the corresponding zone 15z among the multiple supply pipe groups 50g. The one recovery pipe group 60g is the recovery pipe group 60g for the corresponding zone 15z among the multiple recovery pipe groups 60g. The controller 2 controls the alternate opening and closing of each of the multiple flow rate regulators B1 and the alternate opening and closing of each of the multiple bypass flow rate regulators B2.

[0060] 13(a) and 13(b), during a period T1 when each of the plurality of flow rate controllers B1 is open, the heat transfer medium is supplied to the supply pipe group 50g of the corresponding zone 15z, thereby decreasing the temperature of the region within the substrate W above that zone 15z. During the period T1, the corresponding bypass flow rate controller B2 is closed.

[0061] On the other hand, during period T2 when each of the plurality of flow rate controllers B1 is closed, the supply of the heat transfer medium to the supply pipe group 50g of the corresponding zone 15z is stopped, and the temperature of the region within the substrate W above that zone 15z increases. During period T2, the bypass flow rate controller B2 is opened to maintain the flow rate of the heat transfer medium supplied to the common supply pipe 51.

[0062] If the sum of the periods T1 and T2 is one cycle, then in this embodiment, one cycle is, for example, 1 to 0.05 seconds (1 Hz to 20 Hz). If the value (T1 / T1+T2) obtained by dividing the period T1 by the sum of the periods T1 and T2 is the duty ratio, then in this embodiment, the duty ratio is, for example, 0.1 to 0.8. This makes it possible to suppress the amount of temperature fluctuation in the regions of the substrate W above the zones 15z corresponding to each of the plurality of flow rate controllers B1 to within 2°C.

[0063] The control unit 2 adjusts the length of the period T1 during which each of the flow rate controllers B1 is open when the flow rate controllers B1 are alternately opened and closed, thereby adjusting the time average value of the flow rate of the heat transfer medium supplied to the supply pipe group 50g of the corresponding zone 15z, thereby adjusting the time average value of the temperature of the region in the substrate W on the corresponding zone 15z.

[0064] Therefore, according to the plasma processing apparatus 1A, it is possible to individually control the temperatures of multiple regions of the substrate W located on each of the multiple zones 15z. Furthermore, by opening and closing each of the multiple bypass flow rate adjusters B2, the flow rate of the heat transfer medium supplied to the corresponding common supply pipe 51 is maintained. As a result, a change in the flow rate of the heat transfer medium supplied to one of the multiple zones 15z does not affect the flow rate of the heat transfer medium supplied to the other zones. Therefore, the plasma processing apparatus 1A has high independent controllability of the temperatures of multiple regions of the substrate W located on each of the multiple zones 15z.

[0065] Reference is now made to FIG. 14 , which is an enlarged cross-sectional view of a portion of a substrate support table according to yet another exemplary embodiment. As shown in FIG. 14 , the plasma processing apparatus 1B includes a drive unit 90. The drive unit 90 may be, for example, a unit combining a motor and a ball screw. The drive unit 90 is configured to move the open end 50 a of at least one of the plurality of supply pipes 50 along the lower surface 16. In one embodiment, the drive unit 90 may be configured to integrally move each open end 50 a of at least one supply pipe group 50 g. In one embodiment, the drive unit 90 may move one or more cells 19 c included in a corresponding zone up and down.

[0066] In the plasma processing apparatus 1B, the position of the lower surface region 16z to which the heat transfer medium is supplied from the open end 50a of the supply pipe 50 is adjusted by the drive unit 90. Therefore, in the plasma processing apparatus 1B, the temperature of each of the multiple regions of the substrate W located above each of the multiple zones 15z can be independently controlled.

[0067] Although various exemplary embodiments have been described above, the present invention is not limited to the above-described exemplary embodiments, and various additions, omissions, substitutions, and modifications may be made. Furthermore, elements in different embodiments may be combined to form other embodiments.

[0068] Various exemplary embodiments included in the present disclosure are now described in [E1] to [E11] below.

[0069] a substrate support pedestal disposed within the processing chamber, the substrate support pedestal including: an upper surface for supporting a substrate placed thereon; a lower surface opposite the upper surface; and one or more partition walls extending downward from the lower surface, the one or more partition walls and the lower surface defining one or more spaces; a plurality of supply pipes, each having an open end facing the lower surface for supplying a heat transfer medium to the lower surface, the open end being disposed in a corresponding one of the one or more spaces; one or more recovery pipes connected to the one or more spaces, respectively, for recovering the heat transfer medium from the one or more spaces; one or more flow rate adjusters connected to the plurality of supply pipes; and a control unit configured to control the one or more flow rate adjusters to adjust the flow rate of the heat transfer medium supplied to the plurality of supply pipes,

[0070] [E2] The substrate processing apparatus described in E1, wherein the one or more partitions include a plurality of partitions including the outer peripheral wall, the plurality of partitions and the lower surface define a plurality of spaces separated from each other as the one or more spaces, each of the plurality of supply pipes has the opening end positioned in a corresponding one of the plurality of spaces, and the one or more return pipes include a plurality of return pipes respectively connected to the plurality of spaces.

[0071] [E3] The substrate processing apparatus according to E2, wherein the plurality of partition walls include one or more cylindrical partition walls located inside the outer peripheral wall, and each of the one or more cylindrical partition walls has a cylindrical shape and is interposed between an inner space and an outer space of the plurality of spaces.

[0072] [E4] The upper surface of the substrate support table includes a plurality of zones, and the lower surface of the substrate support table includes a plurality of lower surface regions each extending below a corresponding one of the plurality of zones, and the plurality of supply pipes constitute a plurality of supply pipe groups corresponding to the plurality of zones, and each of the plurality of supply pipe groups includes at least one supply pipe having an open end that opens toward a corresponding one of the plurality of lower surface regions, and the plurality of return pipes constitute a plurality of return pipe groups corresponding to the plurality of supply pipe groups, and the substrate processing apparatus further includes a plurality of common supply pipes connected to the plurality of supply pipe groups respectively, and a plurality of common return pipes connected to the plurality of return pipe groups respectively, and the one or more flow rate adjusters include a plurality of flow rate adjusters connected to the plurality of common supply pipes respectively, and the plurality of lower surface regions include a lower surface region intersecting a central axis of the substrate support table, and one or more annular lower surface regions having a ring shape surrounding the lower surface region and concentric with the central axis, The substrate processing apparatus according to E3, wherein each of the one or more cylindrical partition walls extends downward from a portion between two adjacent lower surface regions among the plurality of lower surface regions.

[0073] [E5] The substrate processing apparatus described in any one of E2 to E4, wherein the plurality of partition walls include a plurality of plate-shaped partition walls located inside the outer peripheral wall, the plurality of plate-shaped partition walls extend radially from a central axis of the substrate support table and are arranged along a circumferential direction about the central axis, and each of the plurality of plate-shaped partition walls is interposed between two spaces on either side of it in the circumferential direction among the plurality of spaces.

[0074] [E6] The substrate processing apparatus according to E5, wherein the upper surface of the substrate support table includes a plurality of zones, and the lower surface of the substrate support table includes a plurality of lower surface regions each extending below a corresponding one of the plurality of zones, and the plurality of supply pipes constitute a plurality of supply pipe groups respectively corresponding to the plurality of zones, and each of the plurality of supply pipe groups includes at least one supply pipe having an open end that opens toward a corresponding one of the plurality of lower surface regions, and the plurality of return pipes constitute a plurality of return pipe groups respectively corresponding to the plurality of supply pipe groups, and the substrate processing apparatus further includes: a plurality of common supply pipes connected to the plurality of supply pipe groups respectively; and a plurality of common return pipes connected to the plurality of return pipe groups, and the one or more flow rate adjusters include a plurality of flow rate adjusters connected to the plurality of common supply pipes respectively, and the plurality of lower surface regions include: a lower surface region intersecting a central axis of the substrate support table, and one or more annular lower surface regions having a ring shape surrounding the lower surface region and concentric with the central axis.

[0075] [E7] The substrate processing apparatus described in E2, wherein the plurality of partitions include one or more cylindrical partitions having a cylindrical shape and located inside the outer peripheral wall, and a plurality of plate-like partitions extending radially from a central axis of the substrate support table between one of the one or more cylindrical partitions and the outer peripheral wall and arranged along a circumferential direction, each of the one or more cylindrical partitions being interposed between an inner space of the plurality of spaces and an outer space thereof, and each of the plurality of plate-like partitions being interposed between two spaces on either side of it in the circumferential direction of the plurality of spaces.

[0076] [E8] The upper surface of the substrate support table includes a plurality of zones, and the lower surface of the substrate support table includes a plurality of lower surface regions each extending below a corresponding one of the plurality of zones, and the plurality of supply pipes constitute a plurality of supply pipe groups corresponding to the plurality of zones, and each of the plurality of supply pipe groups includes at least one supply pipe having an open end that opens toward a corresponding one of the plurality of lower surface regions, and the plurality of return pipes constitute a plurality of return pipe groups corresponding to the plurality of supply pipe groups, and the substrate processing apparatus further includes a plurality of common supply pipes connected to the plurality of supply pipe groups respectively, and a plurality of common return pipes connected to the plurality of return pipe groups respectively, and the one or more flow rate adjusters include a plurality of flow rate adjusters connected to the plurality of common supply pipes respectively, and the plurality of lower surface regions include a lower surface region intersecting a central axis of the substrate support table, and one or more annular lower surface regions having a ring shape surrounding the lower surface region and concentric with the central axis, The substrate processing apparatus described in E7, wherein one of the one or more cylindrical partition walls extends downward from a portion between an annular lower surface region adjacent to the lower surface region that intersects with the central axis among the one or more annular lower surface regions and the lower surface region that intersects with the central axis.

[0077] [E9] The substrate processing apparatus according to any one of E4, E6, and E8, further comprising: a common supply line connected to the plurality of common supply pipes; a common return line connected to the plurality of common return pipes; and a bypass flow rate regulator connected between the common supply line and the common return line, wherein each of the plurality of flow rate regulators is configured to regulate the flow rate of the heat transfer medium supplied to a supply pipe group for a corresponding one of the plurality of zones among the plurality of supply pipe groups by its opening degree, and the control unit is configured to control the opening degree of each of the plurality of flow rate regulators and to control the opening degree of the bypass flow rate regulator so as to maintain a total flow rate of the heat transfer medium supplied to the plurality of common supply pipes and the heat transfer medium bypassed from the common supply line to the common return line.

[0078] [E10] The substrate processing apparatus of any one of E4, E6, and E8, further comprising: a common supply line connected to the plurality of common supply pipes; a common return line connected to the plurality of common return pipes; and a plurality of bypass flow rate regulators, each of which is connected between a supply pipe group for a corresponding zone among the plurality of supply pipe groups and a return pipe group for the corresponding zone among the plurality of return pipe groups, and the control unit adjusts a time for which each of the plurality of flow rate regulators is open in alternate opening and closing of each of the plurality of flow rate regulators to adjust a time average value of a flow rate of the heat transfer medium supplied to the supply pipe group for the corresponding zone among the plurality of supply pipe groups, and controls the opening and closing of the plurality of bypass flow rate regulators to maintain the flow rate of the heat transfer medium supplied to each of the plurality of common supply pipes.

[0079] [E11] The substrate processing apparatus according to any one of E1 to E10, further comprising at least one drive unit configured to move an open end of at least one of the plurality of supply pipes along the lower surface.

[0080] From the foregoing, it will be understood that various embodiments of the present disclosure have been described herein for purposes of illustration, and that various modifications may be made without departing from the scope and spirit of the present disclosure. Accordingly, the various embodiments disclosed herein are not intended to be limiting, with the true scope and spirit being indicated by the appended claims.

[0081] 1...plasma processing apparatus, 2...controller, 10...processing chamber, 12, 12A, 12B...substrate support, 15...upper surface, 15z...zone, 16...lower surface, 16z...lower surface region, 17...partition wall, 17a...outer wall, 17b...cylindrical partition wall, 17c, 17d, 17e...plate-shaped partition wall, 18, 18a, 18b, 18c, 18d, 18e, 18f...space, 50...supply pipe, 50a...open end, 50g...supply pipe group, 51...common supply pipe, 52...common supply line, 60...recovery pipe, 60a...open end, 60g...recovery pipe group, 61...common recovery pipe, 62...common recovery line, 90...driver, B1...flow rate regulator, B2...bypass flow rate regulator, W...substrate

Claims

1. A substrate processing apparatus comprising: a processing chamber; a substrate support pedestal disposed within the processing chamber, the substrate support pedestal including: an upper surface for supporting a substrate placed thereon, a lower surface opposite the upper surface, and one or more partition walls extending downward from the lower surface, the one or more partition walls and the lower surface defining one or more spaces; a plurality of supply pipes, each having an open end facing the lower surface for supplying a heat transfer medium to the lower surface, the open end being disposed in a corresponding one of the one or more spaces; one or more recovery pipes connected to the one or more spaces, respectively, for recovering the heat transfer medium from the one or more spaces; one or more flow rate adjusters connected to the plurality of supply pipes; and a control unit configured to control the one or more flow rate adjusters to adjust the flow rate of the heat transfer medium supplied to the plurality of supply pipes, wherein the one or more partition walls include an outer peripheral wall separating an interior of the substrate support pedestal from an exterior of the substrate support pedestal, and the one or more spaces including a space in which the open ends of two or more of the plurality of supply pipes are disposed.

2. The substrate processing apparatus according to claim 1, wherein the one or more partitions include a plurality of partitions including the outer peripheral wall, the plurality of partitions and the lower surface define a plurality of spaces separated from one another as the one or more spaces, each of the plurality of supply pipes has the opening end positioned in a corresponding one of the plurality of spaces, and the one or more return pipes include a plurality of return pipes respectively connected to the plurality of spaces.

3. The substrate processing apparatus according to claim 2, wherein the plurality of partition walls include one or more cylindrical partition walls located inside the outer peripheral wall, each of the one or more cylindrical partition walls having a cylindrical shape and interposed between an inner space and an outer space of the plurality of spaces.

4. The upper surface of the substrate support table includes a plurality of zones, and the lower surface of the substrate support table includes a plurality of lower surface regions each extending below a corresponding one of the plurality of zones, and the plurality of supply pipes constitute a plurality of supply pipe groups corresponding to the plurality of zones, and each of the plurality of supply pipe groups includes at least one supply pipe having an open end that opens toward a corresponding one of the plurality of lower surface regions, and the plurality of return pipes constitute a plurality of return pipe groups corresponding to the plurality of supply pipe groups, and the substrate processing apparatus further includes a plurality of common supply pipes connected to the plurality of supply pipe groups respectively, and a plurality of common return pipes connected to the plurality of return pipe groups respectively, and the one or more flow rate adjusters include a plurality of flow rate adjusters connected to the plurality of common supply pipes respectively, and the plurality of lower surface regions include a lower surface region intersecting a central axis of the substrate support table, and one or more annular lower surface regions having a ring shape surrounding the lower surface region and concentric with the central axis, The substrate processing apparatus according to claim 3 , wherein each of the one or more cylindrical partition walls extends downward from a portion between two adjacent lower surface regions among the plurality of lower surface regions.

5. A substrate processing apparatus as described in claim 2, wherein the plurality of partition walls include a plurality of plate-shaped partition walls located inside the outer peripheral wall, the plurality of plate-shaped partition walls extending radially from a central axis of the substrate support table and arranged along a circumferential direction about the central axis, and each of the plurality of plate-shaped partition walls is interposed between two spaces on either side of it in the circumferential direction among the plurality of spaces.

6. The substrate processing apparatus according to claim 5, wherein the upper surface of the substrate support table includes a plurality of zones, the lower surface of the substrate support table includes a plurality of lower surface regions each extending below a corresponding one of the plurality of zones, the plurality of supply pipes constitute a plurality of supply pipe groups respectively corresponding to the plurality of zones, each of the plurality of supply pipe groups includes at least one supply pipe having an open end that opens towards a corresponding one of the plurality of lower surface regions, and the plurality of return pipes constitute a plurality of return pipe groups respectively corresponding to the plurality of supply pipe groups, the substrate processing apparatus further comprising: a plurality of common supply pipes connected to the plurality of supply pipe groups respectively; and a plurality of common return pipes connected to the plurality of return pipe groups respectively, the one or more flow rate adjusters including a plurality of flow rate adjusters connected to the plurality of common supply pipes respectively, and the plurality of lower surface regions include: a lower surface region intersecting a central axis of the substrate support table, and one or more annular lower surface regions having a ring shape surrounding the lower surface region and concentric with the central axis.

7. The substrate processing apparatus of claim 2, wherein the plurality of partitions include: one or more cylindrical partitions having a cylindrical shape and located inside the outer peripheral wall; and a plurality of plate-like partitions extending radially from the central axis of the substrate support table between one of the one or more cylindrical partitions and the outer peripheral wall and arranged along the circumferential direction, each of the one or more cylindrical partitions being interposed between an inner space of the plurality of spaces and an outer space thereof, and each of the plurality of plate-like partitions being interposed between two spaces on either side of it in the circumferential direction of the plurality of spaces.

8. The upper surface of the substrate support table includes a plurality of zones, and the lower surface of the substrate support table includes a plurality of lower surface regions each extending below a corresponding one of the plurality of zones, and the plurality of supply pipes constitute a plurality of supply pipe groups corresponding to the plurality of zones, and each of the plurality of supply pipe groups includes at least one supply pipe having an open end that opens toward a corresponding one of the plurality of lower surface regions, and the plurality of return pipes constitute a plurality of return pipe groups corresponding to the plurality of supply pipe groups, and the substrate processing apparatus further includes a plurality of common supply pipes connected to the plurality of supply pipe groups respectively, and a plurality of common return pipes connected to the plurality of return pipe groups respectively, and the one or more flow rate adjusters include a plurality of flow rate adjusters connected to the plurality of common supply pipes respectively, and the plurality of lower surface regions include a lower surface region intersecting a central axis of the substrate support table, and one or more annular lower surface regions having a ring shape surrounding the lower surface region and concentric with the central axis, 8. The substrate processing apparatus according to claim 7, wherein one of the one or more cylindrical partition walls extends downward from a portion between an annular lower surface region adjacent to the lower surface region that intersects with the central axis among the one or more annular lower surface regions and the lower surface region that intersects with the central axis.

9. A substrate processing apparatus as claimed in any one of claims 4, 6 and 8, further comprising: a common supply line connected to the plurality of common supply pipes; a common return line connected to the plurality of common return pipes; and a bypass flow rate regulator connected between the common supply line and the common return line, wherein each of the plurality of flow rate regulators is configured to regulate the flow rate of the heat transfer medium supplied to a supply pipe group for a corresponding one of the plurality of zones among the plurality of supply pipe groups by its opening degree, and the control unit is configured to control the opening degree of each of the plurality of flow rate regulators and to control the opening degree of the bypass flow rate regulator so as to maintain the total flow rate of the heat transfer medium supplied to the plurality of common supply pipes and the heat transfer medium bypassed from the common supply line to the common return line.

10. The substrate processing apparatus according to any one of claims 4, 6 and 8, further comprising: a common supply line connected to the plurality of common supply pipes; a common return line connected to the plurality of common return pipes; and a plurality of bypass flow rate regulators, each of which is connected between a supply pipe group for a corresponding zone among the plurality of supply pipe groups and a return pipe group for the corresponding zone among the plurality of return pipe groups, and the control unit adjusts the time for which each of the plurality of flow rate regulators is open in alternate opening and closing of each of the plurality of flow rate regulators to adjust the time average value of the flow rate of the heat transfer medium supplied to the supply pipe group for the corresponding zone among the plurality of supply pipe groups, and controls the opening and closing of the plurality of bypass flow rate regulators to maintain the flow rate of the heat transfer medium supplied to each of the plurality of common supply pipes.

11. The substrate processing apparatus according to any one of claims 1 to 8, further comprising at least one drive unit configured to move an open end of at least one of the plurality of supply pipes along the lower surface.

Images