Optical module and hybrid integrated optical chip

Abstract

An optical module (200), comprising a circuit board (300) and a hybrid integrated optical chip (400), wherein the hybrid integrated optical chip (400) is electrically connected to the circuit board (300). The hybrid integrated optical chip (400) comprises an Si-based platform (410), an InP light-emitting region (480) and an InP modulation region (420). Laser devices (481) are arranged side by side on a surface of the InP light-emitting region (480). Each laser device (481) comprises an active quantum well layer (4813) and a grating layer (4815), wherein the active quantum well layer (4813) is used for outputting light, and the grating layer (4815) is arranged on a surface of an Si waveguide layer (413). InP modulators (421) are arranged side by side on a surface of the InP modulation region (420). The InP modulators (421) are linear electro-optic modulators. Each InP modulator (421) comprises a first modulation waveguide (4211) and a second modulation waveguide (4212), wherein the first modulation waveguide (4211) and the second modulation waveguide (4212) are both optically coupled to one laser device (481) to receive light output by the laser device (481) and perform signal modulation. The hybrid integrated optical chip (400) can have both light emission and signal modulation functions, thereby being more applicable to multi-channel remote transmission.

Description

Optical modules and hybrid integrated optical chips

[0001] This application claims priority from application number 202410308726.5 filed with the China Patent Office on March 18, 2024; the entire contents of which are incorporated by reference into this application. Technical Field

[0002] The present disclosure relates to the field of optical fiber communication technology, and in particular to an optical module and a hybrid integrated optical chip. Background Art

[0003] With the development of new services and applications such as cloud computing, mobile internet, and video, advances in optical communication technology are becoming increasingly important. As a key component in optical communication equipment, optical modules enable photoelectric signal conversion. As optical communication technology evolves, the data transmission rate of these modules continues to increase.

[0004] Summary of the Invention

[0005] An embodiment of the present disclosure provides an optical module, including:

[0006] circuit boards;

[0007] A hybrid integrated optical chip is electrically connected to the circuit board, the hybrid integrated optical chip is configured to modulate and generate an optical signal, and the hybrid integrated optical chip includes:

[0008] The Si-based platform comprises a substrate layer, a cladding layer located above the substrate layer, and a Si waveguide layer located between the substrate layer and the cladding layer;

[0009] An InP light-emitting region is provided on the Si-based platform, wherein a plurality of lasers are arranged side by side in the InP light-emitting region; the lasers include an active quantum well layer and a grating layer; the active quantum well layer is configured to output light; the grating layer is provided on the surface of the Si waveguide layer, and the grating layer is configured to select the wavelength of the light output by the active quantum well layer;

[0010] An InP modulation area is provided on the Si-based platform and on the light output path of the InP light-emitting area to receive the light output by the laser; a plurality of InP modulators are arranged side by side in the InP modulation area, and the plurality of InP modulators are connected to the plurality of lasers in a one-to-one correspondence; the InP modulators respectively include a first modulation waveguide and a second modulation waveguide, and the first modulation waveguide and the second modulation waveguide are respectively optically coupled with the laser to receive the light output by the laser and perform signal modulation, thereby generating an optical signal.

[0011] The present disclosure provides a hybrid integrated optical chip, comprising:

[0012] The Si-based platform comprises a substrate layer, a cladding layer located above the substrate layer, and a Si waveguide layer located between the substrate layer and the cladding layer;

[0013] An InP light-emitting region is provided on the Si-based platform, wherein lasers are arranged side by side in the InP light-emitting region; the lasers include an active quantum well layer and a grating layer; the active quantum well layer is configured to output light; the grating layer is provided on the surface of the Si waveguide layer and is configured to select the wavelength of the light output by the active quantum well layer;

[0014] An InP modulation area is provided on the Si-based platform and on the light-emitting optical path of the InP light-emitting area to receive the light output by the laser; various InP modulators are arranged side by side in the InP modulation area, and the InP modulators are linear electro-optical modulators; the InP modulators are connected to the laser accordingly; the InP modulators respectively include a first modulation waveguide and a second modulation waveguide, and the first modulation waveguide and the second modulation waveguide are respectively optically coupled to the laser to receive the light output by the laser and perform signal modulation, thereby generating an optical signal. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] In order to more clearly illustrate the technical solutions of the embodiments of the present disclosure, the following briefly introduces the drawings required for use in the embodiments or descriptions of the prior art. Obviously, the drawings described below are only some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0016] FIG1 is a partial architecture diagram of an optical communication system provided according to some embodiments of the present disclosure;

[0017] FIG2 is a partial structural diagram of a host computer provided according to some embodiments of the present disclosure;

[0018] FIG3 is a structural diagram of an optical module provided according to some embodiments of the present disclosure;

[0019] FIG4 is an exploded view of an optical module according to some embodiments of the present disclosure;

[0020] FIG5 is a schematic diagram of the internal structure of an optical module provided according to some embodiments of the present disclosure;

[0021] FIG6 is a structural diagram 1 of a hybrid integrated optical chip provided according to some embodiments of the present disclosure;

[0022] FIG7 is a second structural diagram of a hybrid integrated optical chip provided according to some embodiments of the present disclosure;

[0023] FIG8 is a schematic structural diagram of a Si-based platform provided according to some embodiments of the present disclosure;

[0024] FIG9 is a partial cross-sectional structural diagram 1 of a hybrid integrated optical chip provided according to some embodiments of the present disclosure;

[0025] FIG10 is a second partial cross-sectional structural diagram of a hybrid integrated optical chip provided according to some embodiments of the present disclosure;

[0026] FIG11 is a schematic diagram of optical transmission of a hybrid integrated optical chip according to some embodiments of the present disclosure;

[0027] FIG12 is a schematic diagram of external electrical connections of a hybrid integrated optical chip according to some embodiments of the present disclosure. DETAILED DESCRIPTION

[0028] Some embodiments of the present disclosure will be described in detail below with reference to the accompanying drawings. However, the embodiments described are only some of the embodiments of the present disclosure, not all of them. All other embodiments obtained by those of ordinary skill in the art based on the embodiments provided in the present disclosure are within the scope of protection of the present disclosure.

[0029] Unless the context requires otherwise, throughout the specification and claims, the term "including" is to be interpreted as open and inclusive, that is, "including, but not limited to"; the terms "first" and "second" are not to be understood as indicating or implying relative importance or indicating an upper limit on quantity; the term "plurality" means two or more; the term "connected" is to be understood in a broad sense, for example, "connected" can be a fixed connection, a detachable connection, or an integral connection, and can be directly connected or indirectly connected through an intermediate medium; the use of the terms "suitable for" or "configured to" means open and inclusive language, which does not exclude equipment that is suitable for or configured to perform additional tasks or steps; terms such as "parallel", "perpendicular", "same", "consistent", "level" and so on are not limited to absolute mathematical theoretical relationships, but also include acceptable error ranges generated in practice, and also include differences based on the same design concept but due to manufacturing reasons.

[0030] In optical communication technology, to establish information transmission between information processing devices, it is necessary to load the information onto light and use the propagation of light to achieve information transmission. Here, the light loaded with information is an optical signal. When transmitting optical signals within information transmission equipment, they can reduce optical power loss, thereby enabling high-speed, long-distance, and low-cost information transmission. The signals that information processing equipment can recognize and process are electrical signals. Information processing equipment typically includes optical network units (ONUs), gateways, routers, switches, mobile phones, computers, servers, tablets, televisions, etc., and information transmission equipment typically includes optical fibers and optical waveguides.

[0031] Optical modules can convert optical signals into electrical signals between information processing devices and information transmission devices. For example, at least one of the optical signal input or output ends of an optical module is connected to an optical fiber, and at least one of the electrical signal input or output ends of the optical module is connected to an optical network terminal. A first optical signal from the optical fiber is transmitted to the optical module, which converts the first optical signal into a first electrical signal and transmits the first electrical signal to the optical network terminal. A second electrical signal from the optical network terminal is transmitted to the optical module, which converts the second electrical signal into a second optical signal and transmits the second optical signal to the optical fiber. Because multiple information processing devices can transmit information via electrical signals, at least one of the multiple information processing devices needs to be directly connected to the optical module, rather than all of them. Here, the information processing device directly connected to the optical module is referred to as the optical module's host computer. Furthermore, the optical signal input or output end of the optical module can be referred to as an optical port, and the electrical signal input or output end of the optical module can be referred to as an electrical port.

[0032] Figure 1 is a partial structural diagram of an optical communication system provided according to some embodiments of the present disclosure. As shown in Figure 1, the optical communication system mainly includes a remote information processing device 1000, a local information processing device 2000, a host computer 100, an optical module 200, an optical fiber 101, and a network cable 103.

[0033] One end of optical fiber 101 extends toward remote information processing device 1000, and the other end of optical fiber 101 is connected to optical module 200 through the optical port of optical module 200. Optical signals can be totally reflected in optical fiber 101, and the propagation of the optical signal in the direction of total reflection can almost maintain the original optical power. The optical signal undergoes multiple total reflections in optical fiber 101 to transmit the optical signal from remote information processing device 1000 to optical module 200, and vice versa, thereby achieving long-distance, low-power information transmission.

[0034] The optical communication system may include one or more optical fibers 101, and the optical fibers 101 may be detachably connected or fixedly connected to the optical module 200. The host computer 100 is configured to provide data signals to the optical module 200, receive data signals from the optical module 200, or monitor or control the operating status of the optical module 200.

[0035] The host computer 100 includes a substantially rectangular housing and an optical module interface 102 disposed on the housing. The optical module interface 102 is configured to connect to the optical module 200 to establish a unidirectional or bidirectional electrical signal connection between the host computer 100 and the optical module 200.

[0036] The host computer 100 also includes an external electrical interface that can access an electrical signal network. For example, the external electrical interface includes a Universal Serial Bus (USB) interface or a network cable interface 104. The network cable interface 104 is configured to access a network cable 103 so that the host computer 100 establishes a unidirectional or bidirectional electrical signal connection with the network cable 103. One end of the network cable 103 is connected to the local information processing device 2000, and the other end of the network cable 103 is connected to the host computer 100, so that an electrical signal connection is established between the local information processing device 2000 and the host computer 100 via the network cable 103. For example, a third electrical signal emitted by the local information processing device 2000 is transmitted to the host computer 100 via the network cable 103. The host computer 100 generates a second electrical signal based on the third electrical signal. The second electrical signal from the host computer 100 is transmitted to the optical module 200. The optical module 200 converts the second electrical signal into a second optical signal and transmits the second optical signal to the optical fiber 101. The second optical signal is then transmitted to the remote information processing device 1000 via the optical fiber 101. For example, a first optical signal from the remote information processing device 1000 is transmitted through the optical fiber 101. The first optical signal from the optical fiber 101 is transmitted to the optical module 200. The optical module 200 converts the first optical signal into a first electrical signal. The optical module 200 transmits the first electrical signal to the host computer 100. The host computer 100 generates a fourth electrical signal based on the first electrical signal and transmits the fourth electrical signal to the local information processing device 2000. It should be noted that optical modules are tools for converting optical signals into electrical signals. During this conversion process, the information does not change, but the encoding and decoding methods of the information can change.

[0037] In addition to the optical network terminal, the host computer 100 also includes an optical line terminal (OLT), an optical network device (ONT), or a data center server.

[0038] FIG2 is a partial structural diagram of a host computer provided according to some embodiments of the present disclosure. In order to clearly show the connection relationship between the optical module 200 and the host computer 100, FIG2 only shows the structure of the host computer 100 related to the optical module 200. As shown in FIG2, the host computer 100 also includes a PCB circuit board 105 disposed in the housing, a cage 106 disposed on the surface of the PCB circuit board 105, a heat sink 107 disposed on the cage 106, and an electrical connector disposed inside the cage 106. The electrical connector is configured to connect to the electrical port of the optical module 200; the heat sink 107 has a protruding structure such as fins that increase the heat dissipation area.

[0039] The optical module 200 is inserted into the cage 106 of the host computer 100. The cage 106 secures the optical module 200. Heat generated by the optical module 200 is transferred to the cage 106 and then dissipated through the heat sink 107. After the optical module 200 is inserted into the cage 106, the electrical port of the optical module 200 connects with the electrical connector inside the cage 106, thereby establishing a bidirectional electrical signal connection between the optical module 200 and the host computer 100. Furthermore, the optical port of the optical module 200 connects to the optical fiber 101, thereby establishing a bidirectional optical signal connection between the optical module 200 and the optical fiber 101.

[0040] FIG3 is a structural diagram of an optical module provided according to some embodiments of the present disclosure, and FIG4 is an exploded view of an optical module provided according to some embodiments of the present disclosure. As shown in FIG3 and FIG4, the optical module 200 includes a housing (shell), a circuit board 300 disposed within the housing, an optical chip 400, and a light source 500. Exemplarily, the optical chip 400 and the light source 500 are electrically connected to the circuit board 300, respectively, and the light output end of the light source 500 is optically coupled to the optical chip 400. In some embodiments, the light output end of the light source 500 is connected to the optical chip 400 via an optical fiber coupling.

[0041] The housing includes an upper housing 201 and a lower housing 202 . The upper housing 201 covers the lower housing 202 to form the housing having two openings 204 and 205 . The outer contour of the housing is generally a square.

[0042] In some embodiments, the lower shell 202 includes a base plate 2021 and two lower side plates 2022 located on both sides of the base plate 2021 and arranged perpendicular to the base plate 2021; the upper shell 201 includes a cover plate 2011, and the cover plate 2011 covers the two lower side plates 2022 of the lower shell 202 to form the above-mentioned shell.

[0043] In some embodiments, the lower shell 202 includes a base plate 2021 and two lower side plates 2022 located on both sides of the base plate 2021 and arranged perpendicularly to the base plate 2021; the upper shell 201 includes a cover plate 2011 and two upper side plates located on both sides of the cover plate 2011 and arranged perpendicularly to the cover plate 2011. The two upper side plates are combined with the two lower side plates 2022 to achieve the upper shell 201 covering the lower shell 202.

[0044] The direction of the line connecting the two openings 204 and 205 can be consistent with the length direction of the optical module 200, or it can be inconsistent with the length direction of the optical module 200. For example, opening 204 is located at the end of the optical module 200 (the left end in Figure 3), and opening 205 is also located at the end of the optical module 200 (the right end in Figure 3). Alternatively, opening 204 is located at the end of the optical module 200, while opening 205 is located on the side of the optical module 200. Opening 204 is an electrical port, and the gold finger 301 of the circuit board 300 extends from opening 204 and is inserted into the electrical connector of the host computer 100. Opening 205 is an optical port, configured to receive an external optical fiber 101, so that the optical fiber 101 can connect to the optical chip 400 in the optical module 200.

[0045] The combined assembly of the upper and lower housings 201 and 202 facilitates the installation of the circuit board 300, optical modulation chip, and light source within the housing. The upper and lower housings 201 and 202 provide encapsulation and protection for these components. Furthermore, during assembly of the circuit board 300, optical chip 400, and light source 500, positioning components, heat dissipation components, and electromagnetic shielding components are easily positioned, facilitating automated production.

[0046] In some embodiments, the upper shell 201 and the lower shell 202 are made of metal materials, which facilitates electromagnetic shielding and heat dissipation.

[0047] In some embodiments, the optical module 200 further includes an unlocking component 600 located outside its housing. The unlocking component 600 is configured to achieve a fixed connection between the optical module 200 and the host computer, or to release the fixed connection between the optical module 200 and the host computer.

[0048] For example, the unlocking component 600 is located on the outside of the two lower side panels 2022 of the lower housing 202 and includes a snap-fit ​​component that mates with the cage 106 of the host computer 100. When the optical module 200 is inserted into the cage 106, the snap-fit ​​component of the unlocking component 600 secures the optical module 200 in the cage 106. When the unlocking component 600 is pulled, the snap-fit ​​component of the unlocking component 600 moves accordingly, thereby changing the connection between the snap-fit ​​component and the host computer, thereby releasing the optical module 200 from the cage 106 and allowing the optical module 200 to be removed from the cage 106.

[0049] The circuit board 300 includes circuit traces, electronic components, and chips. The electronic components and chips are connected according to the circuit design through the circuit traces to achieve functions such as power supply, electrical signal transmission, and grounding. Electronic components may include, for example, capacitors, resistors, transistors, and metal-oxide-semiconductor field-effect transistors (MOSFETs). Chips may include, for example, microcontroller units (MCUs), laser driver chips, transimpedance amplifiers (TIAs), limiting amplifiers (LAs), clock and data recovery chips (CDRs), power management chips, and digital signal processing (DSP) chips.

[0050] The circuit board 300 is generally a rigid circuit board. Due to its relatively hard material, the rigid circuit board can also realize the load-bearing function. For example, the rigid circuit board can stably carry the above-mentioned electronic components and chips; the rigid circuit board can also be inserted into the electrical connector in the cage 106 of the host computer 100.

[0051] The circuit board 300 also includes a gold finger 301 formed on its end surface, and the gold finger 301 is composed of a plurality of independent pins. The circuit board 300 is inserted into the cage 106, and the gold finger 301 is connected to the electrical connector in the cage 106. The gold finger 301 can be set only on the surface of one side of the circuit board 300 (for example, the upper surface shown in Figure 4), or it can be set on the upper and lower surfaces of the circuit board 300 to provide a larger number of pins, thereby adapting to occasions where a large number of pins are required. The gold finger 301 is configured to establish an electrical connection with the host computer to achieve power supply, grounding, two-wire synchronous serial (Inter-Integrated Circuit, I2C) signal transmission, data signal transmission, etc. Of course, flexible circuit boards are also used in some optical modules. Flexible circuit boards are generally used in conjunction with rigid circuit boards to supplement rigid circuit boards.

[0052] Figure 5 is a schematic diagram of the internal structure of an optical module provided according to some embodiments of the present disclosure. As shown in Figure 5, in some embodiments, a light source 500 is disposed on the side of the optical chip 400. Light from the light source 500 is emitted from the side and coupled into the optical chip 400. The light source 500 serves as an external light source for the optical chip 400, and the light emitted by the light source 500 enters the optical chip 400. The light source 500 can optionally be a laser box, which encapsulates a laser. The laser generates a laser beam, and the light source 500 is used to transmit laser light to the optical chip 400. Lasers, due to their excellent single-wavelength characteristics and wavelength tuning properties, are the preferred light source for optical modules and even optical fiber transmission. Other types of light, such as LEDs, are generally not used in common optical communication systems. Even if such light sources are used in specific optical communication systems, their light source characteristics and chip components differ significantly from those of lasers. This results in significant technical differences between optical modules using lasers and those using other light sources. Those skilled in the art generally do not consider these two types of optical modules to be technically instructive for each other.

[0053] The light emitted by the light source 500 is light that does not carry data and enters the optical chip 400. The optical chip 400 performs phase modulation on it to load the electrical signal into the light to obtain light that carries data, that is, to generate an optical transmission signal, thereby realizing the transmission of the optical signal.

[0054] In some embodiments, the optical chip 400 is a silicon photonic chip, i.e., the optical chip 400 is formed by encapsulating silicon materials. The silicon photonic chip includes a Mach-Zehnder modulator (MZM), which integrates a silicon photonic phase modulator (SiPM) for optical signal modulation and demodulation. Because SiPM chips are easily etched, other functional components such as optical splitters, combiners, mixers, and photodetectors can be integrated within them, thereby achieving more functionality.

[0055] The optical chip 400 can be a monolithic integrated optical chip, for example, a silicon photonic chip. Since the surface of the silicon photonic chip is easy to etch, other functional devices such as splitters, combiners, mixers, photodetectors, etc. can be integrated inside it to achieve more functions. A silicon-based optical modulator is integrated inside the silicon photonic chip. The silicon-based optical modulator uses the plasma dispersion effect of silicon material to achieve control of the light field, thereby achieving optical signal modulation. However, the basic characteristics of silicon material lead to defects in the implementation of optical modulators, such as low modulation efficiency, large capacitance, limited bandwidth, and large optical loss.

[0056] The optical chip 400 can be a hybrid integrated optical chip. A hybrid integrated optical chip refers to an optical chip in which the optical modulator growth platform is different from the growth platform of other functional devices, such as a splitter, a combiner, a mixer, a photodetector, etc. For example, since silicon-based platforms are easy to etch, the growth platforms of the splitter, the combiner, the mixer, the photodetector, etc. adopt a silicon-based platform. The optical modulator integrated inside the hybrid integrated optical chip is a non-silicon-based optical modulator. Non-silicon-based optical modulators, such as InP-based optical modulators. InP-based optical modulators perform optical signal modulation based on the quantum well-confined Stark effect. By controlling the change of the external electric field, the carriers are changed to achieve a change in the refractive index, thereby achieving optical signal modulation.

[0057] It is understandable that when the optical chip 400 is a hybrid integrated optical chip, the non-silicon-based optical modulator can also be a thin-film lithium niobate-based optical modulator, etc. Lithium niobate material has a strong electro-optical effect, and its refractive index changes linearly with the external driving voltage.

[0058] In some embodiments, light source 500 is an electro-absorption modulated laser (EML). EML lasers require independent packaging space, and each EML laser corresponds to one optical channel, making EML lasers unsuitable for multi-channel transmission. Furthermore, EML lasers cannot reduce fiber dispersion effects, making them unsuitable for long-distance transmission.

[0059] In this disclosure, the lasers corresponding to each channel are integrated within a hybrid integrated optical chip to increase integration. Furthermore, each channel has a laser, which reduces local power density and thermal stress, thereby improving the reliability of the hybrid integrated optical chip and making it suitable for multi-channel transmission.

[0060] Figure 6 is a structural diagram 1 of a hybrid integrated optical chip provided according to some embodiments of the present disclosure. As shown in Figure 6, the optical chip 400 is a hybrid integrated optical chip.

[0061] In the present disclosure, an example is given in which the optical chip 400 is a hybrid integrated optical chip, and the non-silicon-based optical modulator integrated inside the optical chip 400 is an InP-based optical modulator.

[0062] The optical chip 400 may include a Si-based platform 410. A beam splitter, a beam combiner, a mixer, a photodetector, etc. are formed on the surface of the Si-based platform 410. The Si-based platform 410 is grown from Si material.

[0063] Optical chip 400 may include an InP light-emitting region 480. InP light-emitting region 480 is grown from InP material. Each laser 481 is disposed within InP light-emitting region 480. Lasers 481 may be Group III-V lasers, such as InP lasers. Group III-V materials are direct bandgap materials with a strong linear electro-optical Pockels effect, making them easy to implement for optical gain.

[0064] The optical chip 400 may include an InP modulation region 420. The InP modulation region 420 is grown from InP material. Individual InP modulators 421 are located within the InP modulation region 420. InP-based optical modulators modulate optical signals based on the quantum well-confined Stark effect. By controlling the applied electric field, carriers change, thereby varying the refractive index and thus modulating the optical signal. InP modulators have high modulation rates and efficiency.

[0065] In some embodiments, the InP modulation region 420 is disposed on the light-emitting path of the InP light-emitting region 480 to receive light emitted by the InP light-emitting region 480 and perform signal modulation on the light.

[0066] A coupling waveguide is provided between the InP light-emitting region 480 and the InP modulation region 420. The coupling waveguide can be either a Si waveguide or an InP waveguide. Considering optical transmission loss, a Si waveguide with lower optical loss can be used for the coupling waveguide. Considering the growth process, the coupling waveguide can be made of the same InP material as the InP light-emitting region 480 and the InP modulation region 420. In this case, the coupling waveguide is an InP waveguide.

[0067] In the present disclosure, the InP light-emitting region 480 and the InP modulation region 420 are combined into an InP region. Optical chip 400 is then an InP / Si hybrid integrated optical chip. In the present disclosure, optical chip 400 is a hybrid integrated optical chip that achieves hybrid integration of Si and InP materials, utilizing the high-speed modulation provided by InP materials and the highly integrated silicon optical circuits provided by Si materials. This allows optical chip 400 to combine the high-speed modulation characteristics of InP materials, meeting the requirements of high-baud-rate modulation and fully utilizing the characteristics of both Si and InP materials.

[0068] In the present disclosure, the hybrid integrated optical chip integrates both the InP light emitting region 480 and the InP modulation region 420, thereby simultaneously having light emitting and signal modulation functions, completing light emitting and signal modulation within the same chip.

[0069] The InP light emitting region 480 and the InP modulation region 420 are respectively located in the Si-based platform 410 , so that the Si-based platform 410 wraps the InP light emitting region 480 and the InP modulation region 420 in the front, back, left, right and bottom directions.

[0070] In the present disclosure, the InP modulator in the InP modulation region 420 is an InP-based Mach-Zehnder (MZ) modulator. Electro-absorption modulators (EAM) and electro-absorption modulated lasers (EML) utilize the quantum-confined Stark effect of semiconductors to change the absorption characteristics of the device by applying an external voltage, thereby increasing its absorption of modulated light and modulating the intensity of the output light. Different from the modulation principle of EAM and EML intensity modulation, the MZ modulator modulates the phase by changing the refractive index of the material, and then indirectly realizes the intensity modulation of the light by using the constructive and destructive interference principles of light. The modulation principle determines the characteristics of the modulator. Compared with EAM modulators and EMLs, the MZ modulator has a higher modulation speed and can achieve longer-distance transmission, and the extinction of the MZ modulator is relatively high.

[0071] The InP modulator in the present disclosure is a linear electro-optic modulator, such as an MZ modulator. Then the hybrid integrated optical chip in the present disclosure has a linear electro-optic modulation effect. Based on the linear electro-optic modulation effect, the hybrid integrated optical chip in the present disclosure has a high modulation efficiency and a high bit rate; at the same time, the hybrid integrated optical chip in the present disclosure can achieve higher-order PAM (Pulse Amplitude Modulation) modulation at a lower modulation bandwidth at the same modulation rate; at the same time, in the hybrid integrated optical chip in the present disclosure, the chirp parameters of the InP modulator are optimized by adjusting the working parameters of the InP modulator, thereby reducing the influence of the optical fiber dispersion effect, making the hybrid integrated optical chip in the present disclosure more suitable for long-distance transmission; at the same time, the hybrid integrated optical chip in the present disclosure can support linear drive applications. The hybrid integrated optical chip provided in the present disclosure is more suitable for multi-channel and long-distance transmission, and can also achieve high bit rate and higher-order PAM modulation.

[0072] In some embodiments, one laser corresponds to one InP modulator on each channel. For an 8-channel optical module, 8 lasers are integrated into the InP light-emitting region 480, and 8 InP lasers are integrated into the InP modulation region 420. For a 16-channel optical module, 16 lasers are integrated into the InP light-emitting region 480, and 16 InP lasers are integrated into the InP modulation region 420. The specific number is not limited here.

[0073] In this disclosure, the lasers corresponding to each channel are integrated within a hybrid integrated optical chip to increase integration. Furthermore, each channel has a laser, which reduces local power density and thermal stress, thereby improving the reliability of the hybrid integrated optical chip and making it suitable for multi-channel transmission.

[0074] Figure 7 is a second structural diagram of a hybrid integrated optical chip according to some embodiments of the present disclosure. As shown in Figure 7, an optical chip 400 is internally integrated with an optical multiplexing component 490. The optical multiplexing component 490 combines various optical signals into a single beam and outputs the combined beam.

[0075] Figure 8 is a structural diagram of a Si-based platform in a hybrid integrated optical chip according to some embodiments of the present disclosure. As shown in Figure 8 , the Si-based platform 410 includes various layered structures.

[0076] The Si-based platform 410 may include a substrate layer 411. Exemplarily, the substrate layer 411 is formed by epitaxial growth of Si material.

[0077] The Si-based platform 410 may include an intermediate layer 412. Exemplarily, the intermediate layer 412 is formed by epitaxial growth of SiO2 material.

[0078] The Si-based platform 410 may include an optical waveguide layer 413. Exemplarily, the optical waveguide layer 413 is a silicon waveguide layer. Silicon waveguides have low-loss transmission characteristics, so the optical waveguide layer 413 is a silicon waveguide layer. The optical waveguide layer 413 is disposed between the intermediate layer 412 and the cladding layer 414.

[0079] The InP light emitting region 480 and the InP modulation region 420 are combined into an InP region. Light within the InP region is transmitted through the InP waveguide. Light outside the InP region is transmitted through the optical waveguide layer 413.

[0080] The Si-based platform 410 may include a cladding layer 414. Exemplarily, the cladding layer 414 is formed by epitaxial growth of SiO2 material.

[0081] The substrate layer 411 , the intermediate layer 412 , the optical waveguide layer 413 , and the cladding layer 414 are arranged in order from bottom to top.

[0082] Figure 9 is a partial cross-sectional structural diagram of a hybrid integrated optical chip according to some embodiments of the present disclosure. Figure 9 is a structural diagram formed along the cross-section direction marked in Figure 6 to position B. As shown in Figure 9, the laser 481 is disposed within the Si-based platform 410.

[0083] The laser 481 may include a first electrode metal layer 4811. When the second electrode metal layer 4816 forms a PN junction with the first electrode metal layer 4811, the concentration difference of carriers causes diffusion movement, resulting in the first electrode metal layer 4811 containing holes and negative ions.

[0084] The laser 481 may include a p-InP layer 4812 .

[0085] Laser 481 may include an active quantum well layer 4813. Active quantum well layer 4813 may employ a multi-quantum well structure, thereby enhancing its ability to collect carriers and increase radiative recombination. As the number of quantum wells increases, the amount of activated material increases, and the optical gain gradually increases, thereby increasing the output optical power.

[0086] The laser 481 may include an n-InP layer 4814. Both ends of the n-InP layer 4814 extend relative to the active quantum well layer 4814, so that second electrode metal layers 4816 are respectively provided on surfaces of both ends of the n-InP layer 4814.

[0087] Laser 481 may include a grating layer 4815 .

[0088] In some embodiments, etching is performed along the surface of the optical waveguide layer 413 to form a grating layer 4815 .

[0089] Laser 481 may include a second electrode metal layer 4816. The second electrode metal layer 4816 is disposed on surfaces extending from opposite ends of the n-InP layer 4814. When the second electrode metal layer 4816 forms a PN junction with the first electrode metal layer 4811, the concentration difference in carriers causes diffusion. As a result of this carrier diffusion, the second electrode metal layer 4816 includes electrons and positive ions.

[0090] In some embodiments, when the second electrode metal layer 4816 forms a PN junction with the first electrode metal layer 4811, the carrier concentration difference causes diffusion. This carrier diffusion results in the first electrode metal layer 4811 containing holes and negative ions, while the second electrode metal layer 4816 contains electrons and positive ions. Based on the charge principle, holes are driven downward into the active quantum well layer 4813, while electrons are driven upward into the active quantum well layer 4813. Therefore, the first electrode metal layer 4811 is used to inject holes, which are P-type carriers, into the active quantum well layer 4813, while the second electrode metal layer 4816 is used to inject electrons, which are N-type carriers, into the active quantum well layer 4813. Within the active quantum well layer 4813, stimulated emission causes discrete electron-hole pairs to recombine, generating photons. This effectively converts the electrically injected carriers into photons and generates gain light. The photons generated by the recombination in the active quantum well layer 4813 are reflected by the resonant cavity or the distributed feedback grating to form positive feedback, thereby generating lasing light.

[0091] In some embodiments, by changing the current injected into the grating layer 4815, the effective refractive index of the grating layer 4815 can be changed, thereby changing the resonant lasing wavelength of the laser 481, thereby achieving the selection of a specific wavelength.

[0092] Figure 10 is a second partial cross-sectional structural diagram of a hybrid integrated optical chip provided according to some embodiments of the present disclosure. Figure 10 illustrates the structure formed along the cross-section direction indicated in FIG6 , extending to position C. InP modulator 421 is disposed within Si-based platform 410. The structure of the InP modulator is described below using InP modulator 421 as an example.

[0093] The InP modulator 421 can include a first modulation waveguide 4211 and a second modulation waveguide 4212. These first and second modulation waveguides 4211 and 4212 serve as the two modulation arms of the InP modulator 421. By controlling the applied electric field, the phase difference between the first and second modulation waveguides 4211 and 4212 can be varied. The output light intensity varies with this phase difference, meaning that the output light intensity is modulated by the modulating electrical signal. The modulated electrical signal is then converted into the output light intensity of the modulated optical signal, thereby achieving modulation.

[0094] The first InP modulator 421 is coupled to the optical waveguide layer 413. Exemplarily, the first InP modulator 421 is disposed above the optical waveguide layer 413. The optical waveguide layer 413 couples and transmits light that does not carry information into the first InP modulator 421.

[0095] The first InP modulator 421 may include a first modulation waveguide 4211 and a second modulation waveguide 4212 , respectively.

[0096] The first modulation waveguide 4211 includes, from top to bottom, a p-InP layer 4201, an active quantum well layer 4202, and an n-InP layer 4203. The p-InP layer 4201 and the n-InP layer 4203 form a PN junction. The second modulation waveguide 4212 has the same structure.

[0097] The first InP modulator 421 may include a first P-electrode metal layer 4213 and a second P-electrode metal layer 4214. The top of the first P-electrode metal layer 4213 and the top of the second P-electrode metal layer 4214 are opposite to each other with a gap therebetween.

[0098] The first P-electrode metal layer 4213 is provided on the surface of the cladding layer 414 . The second P-electrode metal layer 4214 is provided on the surface of the cladding layer 414 .

[0099] The first P-electrode metal layer 4213 is electrically connected to the first modulation waveguide 4211. Exemplarily, the first P-electrode metal layer 4213 is disposed above the first modulation waveguide 4211.

[0100] The second P-electrode metal layer 4214 is electrically connected to the second modulation waveguide 4212. Exemplarily, the second P-electrode metal layer 4214 is disposed above the second modulation waveguide 4212.

[0101] The first InP modulator 421 may include a first N-electrode metal layer 4215 and a second N-electrode metal layer 4216 , respectively.

[0102] Both ends of the n-InP layer 4203 extend relative to the active quantum well layer 4202 , so that a first N-electrode metal layer 4215 and a second N-electrode metal layer 4216 are respectively provided on surfaces of the two ends of the n-InP layer 4203 .

[0103] For example, the first N-electrode metal layer 4215 and the second N-electrode metal layer 4216 may be respectively disposed on the surfaces of the n-InP layer 4203 .

[0104] The first P-electrode metal layer 4213 and the first N-electrode metal layer 4215 are arranged in pairs, and the two are arranged opposite to each other to form a PN junction.

[0105] The second P-electrode metal layer 4214 and the second N-electrode metal layer 4216 are arranged in a pair, and the two are arranged opposite to each other to form a PN junction.

[0106] In this disclosure, the InP modulator is an InP-based MZ modulator. An MZ modulator is a modulator based on the electro-optic effect. The electro-optic effect refers to the change in the refractive index of a material caused by an applied electric field.

[0107] Since the conductivity of the active quantum well layer 4202 is very small, the applied electric field is mostly concentrated in the active quantum well layer 4202, and light is also transmitted to the active quantum well layer 4202, thereby interacting with the transmitted optical signals.

[0108] The first P-electrode metal layer 4213 and the second P-electrode metal layer 4214 each provide P-type carriers, and the first N-electrode metal layer 4215 and the second N-electrode metal layer 4216 each provide N-type carriers. The P-type carriers are transported downward to the active quantum well layer 4202. The N-type carriers are transported upward to the active quantum well layer 4202. For example, the P-type carriers are holes, and the N-type carriers are electrons.

[0109] By utilizing the electro-optic effect of the active quantum well layer 4202 material and controlling the applied electric field to induce carrier changes, the refractive index of the active quantum well layer 4202 changes. The change in the refractive index of the active quantum well layer 4202 is proportional to the phase shift between the first modulation waveguide 4211 and the second modulation waveguide 4212. Therefore, when the refractive index of the active quantum well layer 4202 changes, the phase of the light passing through it changes, achieving modulation.

[0110] The first P-electrode metal layer 4213 and the second P-electrode metal layer 4214 are each loaded with a modulating electrical signal. By controlling the changes in the applied electric field, the carriers change, which in turn changes the refractive index of the active quantum well layer, creating a phase difference between the first modulation waveguide 4211 and the second modulation waveguide 4212. The output light intensity varies with this phase difference, meaning that the output light intensity is modulated by the modulating electrical signal. The modulated electrical signal is then converted into the output light intensity of the modulated optical signal, thus achieving modulation.

[0111] In the present disclosure, the p-InP layer corresponding to the first modulation waveguide, the p-InP layer corresponding to the second modulation waveguide, and the p-InP layer corresponding to the laser are located on the same layer. The n-InP layer corresponding to the first modulation waveguide, the n-InP layer corresponding to the second modulation waveguide, and the n-InP layer corresponding to the laser are located on the same layer. The active quantum well layer corresponding to the first modulation waveguide, the active quantum well layer corresponding to the second modulation waveguide, and the active quantum well layer corresponding to the laser are located on the same layer.

[0112] In this disclosure, an optical channel is used as an example for illustrative description. A beam splitter is formed on the optical path between the laser 481 and the InP modulator 421. The light emitted by the laser 481 is split into two beams by the beam splitter, which enter the first modulation waveguide 4211 and the second modulation waveguide 4212 respectively. By controlling the different phase differences between the first modulation waveguide 4211 and the second modulation waveguide 4212, the output light intensity of the laser is modulated by the modulated electrical signal. After modulation, the modulated electrical signal becomes the output light intensity of the modulated optical signal, thereby achieving modulation.

[0113] The InP modulator in the present disclosure is a linear electro-optic modulator, such as an MZ modulator, so the hybrid integrated optical chip in the present disclosure has a strong linear electro-optic modulation effect.

[0114] Due to its strong linear electro-optical modulation effect, the hybrid integrated optical chip disclosed herein has high modulation efficiency and high bit rate. Furthermore, at the same modulation rate, the hybrid integrated optical chip disclosed herein can achieve higher-order PAM modulation at a lower modulation bandwidth. For example, at the same modulation rate of 448 Gbps, the modulation bandwidth corresponding to PAM6 modulation is 87 GHz, while the modulation bandwidth corresponding to PAM4 modulation is 112 GHz.

[0115] Based on the strong linear electro-optical modulation effect, the hybrid integrated optical chip disclosed herein optimizes the chirp parameter of the InP MZ modulator by adjusting its operating parameters, thereby reducing the impact of fiber dispersion effects, making the hybrid integrated optical chip disclosed herein more suitable for long-distance transmission. For example, by adjusting parameters such as the splitting ratio and operating point of the InP MZ modulator, the chirp parameter of the InP MZ modulator is optimized, thereby reducing the impact of fiber dispersion effects, making the hybrid integrated optical chip disclosed herein more suitable for long-distance transmission.

[0116] Based on the strong linear electro-optical modulation effect, the hybrid integrated optical chip of the present disclosure can support linear drive applications. The hybrid integrated optical chip provided by the present disclosure is more suitable for multi-channel and long-distance transmission, and can also achieve high bit rate and higher-order PAM modulation.

[0117] Figure 11 is a schematic diagram of the optical transmission path of a hybrid integrated optical chip according to some embodiments of the present disclosure. As shown in Figure 11, the InP modulation region 420 is provided on the light output path of the InP light emitting region 480 to receive the light emitted by the InP light emitting region 480 and perform signal modulation on it.

[0118] A beam splitter is formed in the optical path between laser 481 and InP modulator 421. The beam splitter splits the light emitted by laser 481 into two beams, which enter the first modulation waveguide 4211 and the second modulation waveguide 4212, respectively. By controlling the phase difference between the first modulation waveguide 4211 and the second modulation waveguide 4212, the output light intensity is modulated by the modulating electrical signal. The modulated electrical signal is modulated to become the output light intensity of the modulated optical signal, thus achieving modulation. The modulated optical signal is transmitted through the optical waveguide layer 413.

[0119] A coupling waveguide is provided between laser 481 and InP modulator 421. The coupling waveguide can be either a Si waveguide or an InP waveguide. Considering optical transmission loss, a Si waveguide with lower optical loss can be used for the coupling waveguide. Considering the growth process, the coupling waveguide can be made of the same InP material as the InP light-emitting region 480 and the InP modulation region 420. In this case, the coupling waveguide is an InP waveguide.

[0120] The first P-electrode metal layer 4213 on the first modulation waveguide 4211 and the second P-electrode metal layer 4214 on the second modulation waveguide 4212 form a pair of electrodes. Multiple first P-electrode metal layers 4213 are provided on the first modulation waveguide 4211, and multiple first P-electrode metal layers 4213 are provided on the second modulation waveguide 4212. Thus, multiple pairs of first P-electrode metal layers exist on a single InP modulator.

[0121] An InP modulator includes two modulation waveguides, namely a first modulation waveguide 4211 and a second modulation waveguide 4212 . The first modulation waveguide 4211 and the second modulation waveguide 4212 are two modulation arms of the InP modulator 421 .

[0122] The first modulation waveguide 4211 and the second modulation waveguide 4212 are InP-based modulation waveguides. To improve optical coupling efficiency, a spot size converter can be provided between the InP-based modulation waveguide and the Si waveguide. Large mode field mismatch between the InP-based modulation waveguide and the Si waveguide can lead to significant coupling loss. The spot size converter can be used to match the mode field between the two, thereby improving optical coupling efficiency.

[0123] Figure 12 is a schematic diagram illustrating the external electrical connections of a hybrid integrated optical chip according to some embodiments of the present disclosure. Based on the hybrid integrated optical chip provided in the embodiments of the present disclosure, the present disclosure also provides a hybrid integrated optical chip assembly. As shown in Figure 12, the hybrid integrated optical chip assembly includes a substrate 700, a driver 800, and an optical chip 400. Driver 800 and optical chip 400 are disposed above substrate 700. Optical chip 400 is a hybrid integrated optical chip.

[0124] Exemplarily, the driver 800 and the hybrid integrated optical chip are connected to the substrate 700 via solder balls respectively.

[0125] One end of the hybrid integrated optical chip assembly is embedded in the electrical connection portion 900. One end of the electrical connection portion 900 is electrically connected to the driver 800 and the optical chip 400, respectively, and the other end is electrically connected to the ASIC electrical device through a high-frequency transmission line.

[0126] The InP modulator in the present disclosure is a linear electro-optic modulator, and the hybrid integrated optical chip in the present disclosure has a linear electro-optic modulation effect. Based on the linear electro-optic modulation effect, the hybrid integrated optical chip in the present disclosure can support linear drive applications.

[0127] Since the hybrid integrated optical chip in the present disclosure can support linear drive applications, the quality of high-frequency signal transmission can be guaranteed, thereby allowing longer high-frequency transmission lines to transmit electrical signals to the optical chip 400 .

[0128] Based on the hybrid integrated optical chip provided in the embodiments of the present disclosure, the preparation process of the hybrid integrated optical chip in the embodiments of the present disclosure may include:

[0129] S100: preparing a silicon platform substrate, wherein the silicon platform substrate comprises a substrate layer and an intermediate layer, wherein the intermediate layer is located above the substrate layer.

[0130] The substrate layer 411 is epitaxially grown, and the intermediate layer 412 is grown on the substrate layer 4601. The substrate layer 411 is epitaxially grown using Si material, and the intermediate layer 412 is epitaxially grown using SiO2 material.

[0131] S200: etching to form a Si waveguide layer above the intermediate layer, and etching to form a grating layer on the surface of the Si waveguide layer.

[0132] A Si waveguide layer 413 is epitaxially grown on the intermediate layer 412. At the same time, a grating layer 4815 is formed on the surface of the Si waveguide layer 413 by etching.

[0133] S300: forming a first SiO2 layer around the etched Si waveguide layer and the grating layer, the first SiO2 layer filling the etched area in the Si waveguide layer, and growing an InP bare chip on the first SiO2 layer.

[0134] SiO2 is used to fill the area around the etched Si waveguide layer and grating layer.

[0135] S400: etching the InP bare wafer layer by layer to obtain n-InP layers for the laser, the first modulation waveguide, and the second modulation waveguide; active quantum hydrazine layers for the laser, the first modulation waveguide, and the second modulation waveguide; and p-InP layers for the laser, the first modulation waveguide, and the second modulation waveguide.

[0136] In the present disclosure, the p-InP layer corresponding to the first modulation waveguide, the p-InP layer corresponding to the second modulation waveguide, and the p-InP layer corresponding to the laser are located on the same layer. The n-InP layer corresponding to the first modulation waveguide, the n-InP layer corresponding to the second modulation waveguide, and the n-InP layer corresponding to the laser are located on the same layer. The active quantum well layer corresponding to the first modulation waveguide, the active quantum well layer corresponding to the second modulation waveguide, and the active quantum well layer corresponding to the laser are located on the same layer.

[0137] S500: forming a second electrode metal layer of the laser on surfaces at both ends of the n-InP layer of the laser; forming a first N-electrode metal layer and a second N-electrode metal layer on surfaces at both ends of the n-InP layer of the InP modulator.

[0138] Both ends of the n-InP layer 4814 of the laser extend out relative to the active quantum well layer 4814 , so that second electrode metal layers 4816 are respectively provided on the surfaces of both ends of the n-InP layer 4814 .

[0139] Both ends of the n-InP layer 4203 of the InP modulator extend relative to the active quantum well layer 4202 , so that a first N-electrode metal layer 4215 and a second N-electrode metal layer 4216 are respectively provided on the surfaces of the two ends of the n-InP layer 4203 .

[0140] S600: Fill the current blank area to form a second SiO2 layer. The first SiO2 layer and the second SiO2 layer form a cladding layer.

[0141] SiO2 is filled in the blank area within the region enclosed by the substrate layer 411, extending from the p-InP layer corresponding to the first modulation waveguide downward to the n-InP layer corresponding to the first modulation waveguide. The filled SiO2 layer is the second SiO2 layer. The first and second SiO2 layers form the cladding layer 414.

[0142] S700: a first electrode metal layer of the laser, a first P-electrode metal layer corresponding to the first modulation waveguide, and a second P-electrode metal layer corresponding to the second modulation waveguide are respectively manufactured on the surface of the cladding.

[0143] In the present disclosure, the hybrid integrated optical chip includes a Si-based platform, an InP light-emitting area, and an InP modulation area. The InP light-emitting area and the InP modulation area are respectively arranged on the Si-based platform. The InP modulation area is arranged on the light-emitting optical path of the InP light-emitting area to receive the light emitted by the InP light-emitting area and perform signal modulation on it. Various lasers are arranged side by side on the surface of the InP light-emitting area. The laser includes an active quantum well layer and a grating layer. The active quantum well layer is used to output light and transmit the output light toward the grating layer. The grating layer is arranged on the surface of the Si waveguide layer to select the wavelength of the light output by the active quantum well layer. Various InP modulators are arranged side by side on the surface of the InP modulation area. The InP modulator is a linear electro-optical modulator. The InP modulator is connected to the laser accordingly. The InP modulator is arranged on the surface of the Si waveguide layer. The InP modulator includes a first modulation waveguide and a second modulation waveguide. The first modulation waveguide and the second modulation waveguide are respectively optically coupled to the laser to receive the light output by the laser. The InP modulator is used to modulate the light output by the laser to generate an optical signal. The hybrid integrated optical chip in this disclosure is an InP / Si hybrid integrated optical chip. The InP modulator has a high modulation rate, and the Si-based platform surface can be etched to form various functional devices. Therefore, the hybrid integrated optical chip in this disclosure has both a high modulation rate and a surface that is etchable.

[0144] In this disclosure, the lasers corresponding to each channel are integrated within a hybrid integrated optical chip to increase integration. Furthermore, each channel has a laser, which reduces local power density and thermal stress, thereby improving the reliability of the hybrid integrated optical chip and making it suitable for multi-channel transmission.

[0145] The InP modulator in the present disclosure is a linear electro-optic modulator, and the hybrid integrated optical chip in the present disclosure has a linear electro-optic modulation effect. Based on the linear electro-optic modulation effect, the hybrid integrated optical chip in the present disclosure has high modulation efficiency and high bit rate.

[0146] The hybrid integrated optical chip disclosed in the present invention can achieve higher-order PAM modulation at a lower modulation bandwidth at the same modulation rate.

[0147] In the hybrid integrated optical chip disclosed in the present invention, the chirp parameters of the InP modulator are optimized by adjusting the operating parameters of the InP modulator, thereby reducing the impact of the optical fiber dispersion effect, making the hybrid integrated optical chip disclosed in the present invention more suitable for long-distance transmission.

[0148] The hybrid integrated optical chip disclosed in the present disclosure can support linear drive applications. The hybrid integrated optical chip provided in the present disclosure is more suitable for multi-channel and long-distance transmission, and can also achieve high bit rate and higher-order PAM modulation.

[0149] The above description is merely a specific embodiment of the present disclosure, but the scope of protection of the present disclosure is not limited thereto. Any changes or substitutions that a person skilled in the art can conceive within the technical scope disclosed in the present disclosure should be included within the scope of protection of the present disclosure. Therefore, the scope of protection of the present disclosure should be based on the scope of protection of the claims.

Claims

1. An optical module, comprising: circuit boards; A hybrid integrated optical chip is electrically connected to the circuit board, the hybrid integrated optical chip is configured to modulate and generate an optical signal, and the hybrid integrated optical chip includes: The Si-based platform comprises a substrate layer, a cladding layer located above the substrate layer, and a Si waveguide layer located between the substrate layer and the cladding layer; An InP light-emitting region is provided on the Si-based platform, wherein a plurality of lasers are arranged side by side in the InP light-emitting region; the lasers include an active quantum well layer and a grating layer; the active quantum well layer is configured to output light; the grating layer is provided on the surface of the Si waveguide layer, and the grating layer is configured to select the wavelength of the light output by the active quantum well layer; An InP modulation area is provided on the Si-based platform and on the light output path of the InP light-emitting area to receive the light output by the laser; a plurality of InP modulators are arranged side by side in the InP modulation area, and the plurality of InP modulators are connected to the plurality of lasers in a one-to-one correspondence; the InP modulators respectively include a first modulation waveguide and a second modulation waveguide, and the first modulation waveguide and the second modulation waveguide are respectively optically coupled with the laser to receive the light output by the laser and perform signal modulation, thereby generating an optical signal.

2. The optical module according to claim 1, wherein: The laser comprises, from top to bottom, a first electrode metal layer, a p-InP layer, the active quantum well layer, an n-InP layer and the grating layer; the first electrode metal layer is provided on the surface of the cladding layer; Two ends of the n-InP layer extend relative to the active quantum well layer, so that second electrode metal layers are respectively formed on surfaces of both ends of the n-InP layer; The first electrode metal layer and the second electrode metal layer respectively provide carriers to the active quantum well layer.

3. The optical module according to claim 1, wherein: The laser comprises, from top to bottom, a first electrode metal layer, a p-InP layer, the active quantum well layer, an n-InP layer and the grating layer; The first modulation waveguide comprises, from top to bottom, a P-InP layer, an active quantum well layer, and an n-InP layer; A first P-electrode metal layer is formed on the surface of the p-InP layer, and both ends of the n-InP layer extend relative to the active quantum well layer, so that a first N-electrode metal layer is respectively provided on the surfaces of both ends of the n-InP layer; The p-InP layer of the first modulation waveguide is located on the same layer as the p-InP layer of the laser, the n-InP layer of the first modulation waveguide is located on the same layer as the n-InP layer of the laser, and the active quantum well layer of the first modulation waveguide is located on the same layer as the active quantum well layer of the laser.

4. The optical module according to claim 1, wherein: A spot converter is provided between the first modulation waveguide, the second modulation waveguide and the Si waveguide layer.

5. The optical module according to claim 1, wherein: The lasers are optically connected to the InP modulators in a one-to-one correspondence.

6. The optical module according to claim 1, wherein: The InP modulator is a linear electro-optical modulator; And / or, the InP modulator is an InP-based MZ modulator.

7. A hybrid integrated optical chip comprising: The Si-based platform comprises a substrate layer, a cladding layer located above the substrate layer, and a Si waveguide layer located between the substrate layer and the cladding layer; An InP light-emitting region is provided on the Si-based platform, wherein each laser is arranged side by side in the InP light-emitting region; the laser comprises an active quantum well layer and a grating layer; the active quantum well layer is configured to output light; the grating layer is provided on the Si waveguide layer a surface configured to perform wavelength selection on light output from the active quantum well layer; An InP modulation area is provided on the Si-based platform and on the light-emitting optical path of the InP light-emitting area to receive the light output by the laser; various InP modulators are arranged side by side in the InP modulation area, and the InP modulators are linear electro-optical modulators; the InP modulators are connected to the laser accordingly; the InP modulators respectively include a first modulation waveguide and a second modulation waveguide, and the first modulation waveguide and the second modulation waveguide are respectively optically coupled to the laser to receive the light output by the laser and perform signal modulation, thereby generating an optical signal.

8. The hybrid integrated optical chip according to claim 7, wherein: The laser comprises, from top to bottom, a first electrode metal layer, a p-InP layer, the active quantum well layer, an n-InP layer, and the grating layer; the first electrode metal layer is provided on the surface of the cladding layer; Two ends of the n-InP layer extend relative to the active quantum well layer, so that second electrode metal layers are respectively formed on surfaces of both ends of the n-InP layer; The first electrode metal layer and the second electrode metal layer respectively provide carriers to the active quantum well layer.

9. The hybrid integrated optical chip according to claim 7, wherein: The laser comprises, from top to bottom, a first electrode metal layer, a p-InP layer, the active quantum well layer, an n-InP layer, and the grating layer; The first modulation waveguide comprises, from top to bottom, a P-InP layer, an active quantum well layer, and an n-InP layer; A first P-electrode metal layer is formed on the surface of the p-InP layer, and both ends of the n-InP layer extend relative to the active quantum well layer, so that a first N-electrode metal layer is respectively provided on the surfaces of both ends of the n-InP layer; The p-InP layer of the first modulation waveguide is located on the same layer as the p-InP layer of the laser, the n-InP layer of the first modulation waveguide is located on the same layer as the n-InP layer of the laser, and the active quantum well layer of the first modulation waveguide is located on the same layer as the active quantum well layer of the laser.

10. The hybrid integrated optical chip according to claim 7, wherein: The lasers are optically connected to the InP modulators in a one-to-one correspondence.

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