Wafer reaction device

Abstract

A wafer reaction device, comprising a reaction mechanism and a pipeline integration mechanism. A reaction cavity is formed in the reaction mechanism, at least part of the inner wall of the reaction cavity is obliquely arranged, and a wafer placement position used for bearing a wafer is provided in the reaction cavity; and the pipeline integration mechanism comprises a first air inlet pipe, a plurality of second air inlet pipes, and an air outlet member, the first air inlet pipe and the plurality of second air inlet pipes are used for respectively conveying different reaction gases into the reaction cavity, an air outlet end of the first air inlet pipe and air outlet ends of the plurality of second air inlet pipes are all communicated with an air inlet end of the air outlet member, an air outlet end of the air outlet member is arranged corresponding to an air inlet end of the reaction cavity, and a plurality of air outlet holes are formed in the air outlet end of the air outlet member, so that a reaction gas is diffused to the wafer placement position along the inner wall of the reaction cavity. The wafer reaction device allows for uniform distribution of gas on the surface of the wafer, and improves wafer coating quality.

Description

Wafer reaction device

[0001] This application claims priority to patent application number 202410336746.3 filed with the China Patent Office on March 22, 2024, the entire contents of which are incorporated herein by reference. Technical Field

[0002] The present disclosure relates to the field of semiconductor production and manufacturing technology, and in particular to a wafer reaction device. Background Art

[0003] Atomic layer deposition (ALD) is a method of depositing a substance onto a substrate layer by layer in the form of a single atomic film. A wafer reactor is a device that uses ALD to deposit a film onto a wafer.

[0004] In the related art, a wafer reaction device usually includes a reaction chamber, a reaction cavity is provided in the reaction chamber, and a wafer is usually placed in the reaction cavity. A first air inlet channel interconnected with the reaction cavity is provided above the wafer, and the first air inlet channel is used to introduce carrier gas and first reaction gas into the reaction cavity. A plurality of second air inlet channels interconnected with the reaction cavity are provided around the side wall of the reaction cavity, and the plurality of second air inlet channels are all provided above the wafer. The plurality of second air inlet channels are used to introduce carrier gas and multiple second reaction gases into the reaction cavity. An air outlet channel connected to the reaction cavity is provided below the wafer, and the carrier gas and the first reaction gas as well as the carrier gas and multiple second reaction gases enter the reaction cavity through the first air inlet channel and the plurality of second air inlet channels in turn and diffuse to the bottom of the wafer and the surface of the wafer to react, and then flow out through the air outlet channel.

[0005] However, it is difficult to effectively control the reaction space in the wafer reaction device in the prior art, and it is easy to cause uneven gas distribution on the wafer surface, resulting in uneven deposition layer on the wafer surface, affecting the coating quality of the wafer. Summary of the Invention

[0006] The present disclosure provides a wafer reaction device, comprising:

[0007] The reaction mechanism is formed with a reaction chamber, at least a portion of the inner wall of the reaction chamber is inclined, and a wafer placement position for holding a wafer is provided in the reaction chamber;

[0008] A pipeline integration mechanism includes a first air inlet pipe, multiple second air inlet pipes, and an air outlet member. The first air inlet pipe and the multiple second air inlet pipes are used to respectively transport different reaction gases into the reaction chamber. The outlet ends of the first air inlet pipe and the multiple second air inlet pipes are both connected to the air inlet end of the air outlet member. The air outlet end of the air outlet member is correspondingly arranged to the air inlet end of the reaction chamber. The air outlet end of the air outlet member is provided with multiple air outlet holes to allow the reaction gas to diffuse along the inner wall of the reaction chamber to the wafer placement position.

[0009] The pipeline integration mechanism also includes a connecting component;

[0010] The connecting component is provided as an annular structure, the outlet ends of the plurality of second air inlet pipes are connected to the air outlet member via the connecting component, and the connecting component is provided around the first air inlet pipe;

[0011] The communication component includes a storage component and a communication component;

[0012] The storage element is provided with an annular structure, the outlet ends of the plurality of second air inlet pipes are connected to the air inlet end of the storage element, the outlet end of the storage element is connected to the air inlet ends of the plurality of connecting elements, and the outlet ends of the plurality of connecting elements are connected to the air inlet end of the air outlet element;

[0013] The radial dimension of the storage element is larger than the inner diameter of the air outlet end of the second air inlet pipe, and the inner diameter of the connecting element is smaller than the inner diameter of the air outlet end of the second air inlet pipe;

[0014] The pipeline integration mechanism also includes a purge intake pipe, an intake branch pipe and an intake channel;

[0015] The purge air inlet pipe is connected to one end of the air inlet channel, the air inlet channel is arranged in an annular structure, and the other end of the air inlet channel is connected to one end of the plurality of air inlet branch pipes, and the other ends of the plurality of air inlet branch pipes are connected to the plurality of second air inlet pipes respectively;

[0016] The pipeline integration mechanism also includes a purge exhaust pipe, an exhaust branch pipe and an exhaust channel;

[0017] The purge exhaust pipe is connected to one end of the exhaust channel, the exhaust channel is arranged in an annular structure, and the other end of the exhaust channel is connected to one end of the plurality of exhaust branch pipes, and the other ends of the plurality of exhaust branch pipes are connected to the plurality of second intake pipes respectively;

[0018] The purge inlet pipe is used to blow in purge gas, and the purge exhaust pipe is used to discharge purge gas and impurity gas;

[0019] The pipeline integration mechanism further includes a first injection member and a second injection member;

[0020] A plurality of first injection members are detachably disposed in the air intake branch pipe, wherein the inner diameter of the first injection member is smaller than the inner diameter of the air intake branch pipe;

[0021] The plurality of second injection members are detachably arranged in the exhaust branch pipe, and the inner diameter of the second injection member is smaller than the inner diameter of the exhaust branch pipe. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] In order to more clearly illustrate the technical solutions of the embodiments of the present disclosure, the following briefly introduces the drawings required for use in the embodiments or descriptions of the prior art. Obviously, the drawings described below are only some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0023] FIG1 is a cross-sectional view of a wafer reaction device according to some embodiments of the present disclosure;

[0024] FIG2 is a schematic structural diagram of the pipeline integration mechanism in FIG1 ;

[0025] FIG3 is a cross-sectional view of FIG2;

[0026] FIG4 is a cross-sectional view of a portion of the structure in FIG1 ;

[0027] FIG5 is a cross-sectional view of the structure in FIG1;

[0028] FIG6 is a partial structural schematic diagram 1 in FIG1 ;

[0029] FIG7 is a second schematic diagram of a portion of the structure in FIG1 ;

[0030] FIG8 is a third schematic diagram of a portion of the structure in FIG1 ;

[0031] FIG9 is a top view of FIG1;

[0032] FIG10 is a schematic diagram of a portion of the structure of FIG1;

[0033] FIG11 is a schematic structural diagram of the ceramic shunt in FIG1 assembled to the outer shell;

[0034] FIG12 is a schematic structural diagram of the heat conducting plate in FIG4 . DETAILED DESCRIPTION

[0035] The following will be combined with the accompanying drawings to clearly and completely describe the technical solutions in some embodiments of the present disclosure. Obviously, the embodiments described are only some embodiments of the present disclosure, not all embodiments. Based on the embodiments provided by the present disclosure, all other embodiments obtained by ordinary technicians in this field are within the scope of protection of the present disclosure.

[0036] Unless the context requires otherwise, throughout the specification and claims, the term "comprise" and its other forms, such as the third person singular form "comprises" and the present participle form "comprising", are to be interpreted as open and inclusive, that is, "including, but not limited to". In the description of the specification, the terms "one embodiment", "some embodiments", "exemplary embodiments", "example", "specific example" or "some examples" are intended to indicate that the particular features, structures, materials or characteristics associated with the embodiment or example are included in at least one embodiment or example of the present disclosure. The schematic representation of the above terms does not necessarily refer to the same embodiment or example. In addition, the particular features, structures, materials or characteristics may be included in any one or more embodiments or examples in any appropriate manner.

[0037] In the following, the terms "first" and "second" are used for descriptive purposes only and should not be understood to indicate or imply relative importance or implicitly specify the number of the technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the embodiments of the present disclosure, unless otherwise specified, "plurality" means two or more.

[0038] Atomic layer deposition (ALD) is a method of depositing a substance onto a substrate layer by layer in the form of a single atomic film. A wafer reactor is a device that uses ALD to deposit a film onto a wafer.

[0039] In the related art, a wafer reaction device usually includes a reaction chamber, a reaction cavity is provided in the reaction chamber, and a wafer is usually placed in the reaction cavity. A first air inlet channel connected to the reaction cavity is provided above the wafer, and the first air inlet channel is used to introduce carrier gas and first reaction gas into the reaction cavity. A plurality of second air inlet channels connected to the reaction cavity are provided around the side wall of the reaction cavity, and the plurality of second air inlet channels are all provided above the wafer. The plurality of second air inlet channels are used to introduce carrier gas and multiple second reaction gases into the reaction cavity. An air outlet channel connected to the reaction cavity is provided below the wafer, and the carrier gas and the first reaction gas as well as the carrier gas and multiple second reaction gases enter the reaction cavity through the first air inlet channel and the plurality of second air inlet channels in turn, diffuse to the bottom of the wafer and the surface of the wafer to react, and then flow out through the air outlet channel.

[0040] However, it is difficult to effectively control the reaction space in the wafer reaction device in the prior art, and it is easy to cause uneven gas distribution on the wafer surface, resulting in uneven deposition layer on the wafer surface, affecting the coating quality of the wafer.

[0041] Therefore, the embodiment of the present disclosure provides a wafer reaction device to solve the technical problem that the wafer reaction device in the prior art is difficult to effectively control the reaction space, and easily leads to uneven gas distribution on the wafer surface, resulting in uneven deposition layer on the wafer surface, and affecting the coating quality of the wafer.

[0042] FIG1 is a cross-sectional view of the structure of a wafer reaction device provided according to some embodiments of the present disclosure.

[0043] 1 , an embodiment of the present disclosure provides a wafer reaction device, comprising:

[0044] The reaction mechanism 100 is formed with a reaction chamber, at least a portion of the inner wall of the reaction chamber is inclined, and a wafer placement position 122a for holding a wafer is provided in the reaction chamber;

[0045] The pipeline integrated mechanism 200 includes a first air inlet pipe 210, multiple second air inlet pipes 220 and an air outlet piece 230. The first air inlet pipe 210 and the multiple second air inlet pipes 220 are used to respectively transport different reaction gases into the reaction chamber. The outlet end of the first air inlet pipe 210 and the outlet ends of the multiple second air inlet pipes 220 are both connected to the inlet end of the air outlet piece 230. The outlet end of the air outlet piece 230 and the inlet end of the reaction chamber are correspondingly arranged. The outlet end of the air outlet piece 230 is provided with multiple air outlet holes to allow the reaction gas to diffuse along the inner wall of the reaction chamber to the wafer placement position 122a.

[0046] Illustratively, the first air inlet pipe 210 is used to introduce carrier gas (nitrogen can be used as carrier gas) and precursor A, and multiple second air inlet pipes 220 are used to respectively introduce carrier gas (nitrogen can be used as carrier gas) and precursor B1, carrier gas and precursor B2, carrier gas and precursor B3, etc., which are not listed one by one here.

[0047] During specific implementation, the first air inlet pipe 210 and the plurality of second air inlet pipes 220 are sequentially fed with corresponding reaction gases.

[0048] Exemplarily, a microwave plasma is further provided between the outlet ends of the first air inlet pipe 210 and the plurality of second air inlet pipes 220 and the air outlet member 230 , wherein the microwave plasma is used to perform microwave plasma treatment on the reaction gas introduced into the first air inlet pipe 210 and the second air inlet pipe 220 .

[0049] Exemplarily, the pipeline integration mechanism 200 includes a first component 201, a second component 202, a third component 203 and a fourth component 204 stacked in sequence, wherein the first component 201, the second component 202, the third component 203 and the fourth component 204 can be formed as one piece, or the first component 201, the second component 202, the third component 203 and the fourth component 204 can be formed separately and then connected with bolts.

[0050] In a specific implementation, the first air inlet pipe 210 may include a first pipe and a first channel, wherein the first channel is an air inlet channel 252 extending along the first component 201, the second component 202, the third component 203, and the fourth component 204. The first pipe and the first channel are in communication, and an external first air inlet device introduces reactant gas into the first channel via the first pipe. Similarly, the second air inlet pipe 220 may include a second pipe and a second channel, wherein the second channel is an air inlet channel 252 extending along the first component 201, the second component 202, the third component 203, and the fourth component 204. The second pipe and the second channel are in communication, and an external second air inlet device introduces reactant gas into the second channel via the second pipe.

[0051] From the above description, it can be seen that this solution achieves the following technical effects:

[0052] The embodiment of the present disclosure provides a wafer reaction device. In the embodiment of the present disclosure, the first air inlet pipe 210 and the multiple second air inlet pipes 220 are integrated and connected to the air outlet piece 230. On the one hand, the air outlet ends of the first air inlet pipe 210 and the multiple second air inlet pipes 220 can be concentrated, so that the reaction space can be effectively controlled; on the other hand, when the reaction gas is introduced into the reaction chamber, first, the carrier gas and the first reaction gas are introduced into the air outlet piece 230 through the first air inlet pipe 210 and concentrated, and then uniformly discharged from the exhaust holes of the air outlet piece 230; then, the carrier gas and different second reaction gases are introduced into the air outlet piece 230 through the multiple second air inlet pipes 220 in turn and concentrated, and then uniformly discharged from the exhaust pipe of the air outlet piece 230, so as to achieve the effect of uniformly diffusing the gas; therefore, the embodiment of the present disclosure can achieve uniform diffusion of the reaction gas in a smaller reaction space by integrating the first air inlet pipe 210 and the multiple second air inlet pipes 220. Furthermore, in the present disclosure, by slanting the inner wall of the reaction chamber and aligning the outlet end of the gas outlet member 230 with the inlet end of the reaction chamber, the reaction gas within the gas outlet member 230 can be diffused through the inclined inner wall of the reaction chamber to the wafer on the wafer placement position 122a, thereby avoiding uneven spraying of the reaction gas, thereby achieving uniform gas distribution on the wafer surface and improving the coating quality of the wafer. Through the configuration of the embodiment of the present disclosure, a wafer reaction device is provided that can achieve uniform gas distribution on the wafer surface and improve the coating quality of the wafer.

[0053] FIG2 is a schematic structural diagram of the pipeline integration mechanism in FIG1 ; FIG3 is a cross-sectional view of FIG2 .

[0054] 2 to 3 , in some examples, the pipeline integration mechanism 200 further includes a communication component 240 ;

[0055] The connecting component 240 is provided as an annular structure. The outlet ends of the plurality of second air inlet pipes 220 are connected to the air outlet member 230 via the connecting component 240 . The connecting component 240 is provided around the first air inlet pipe 210 .

[0056] Illustratively, the connecting component 240 may be an annular channel provided on the third component 203 and the fourth component 204 , and the annular channel is connected to the gas outlet ends of the plurality of second air inlet pipes 220 , ie, connected to the gas outlet ends of the second channels.

[0057] Illustratively, the plurality of second intake pipes 220 are disposed around the first intake pipe 210 .

[0058] In the embodiment of the present disclosure, through the setting of the connecting component 240, when the reaction gas is introduced into the second air inlet pipe 220, the reaction gas can be concentrated and diffused through the connecting component 240 to avoid the reaction gas diffusing only from the outlet end of the second air inlet pipe 220 toward the reaction chamber, thereby improving the uniformity of gas diffusion, so as to facilitate uniform deposition on the wafer surface, thereby improving the coating quality of the wafer.

[0059] In some examples, the communication component 240 includes a storage component 241 and a communication component 242;

[0060] The storage element 241 is provided in an annular structure. The outlet ends of the plurality of second air inlet pipes 220 are connected to the air inlet end of the storage element 241. The outlet end of the storage element 241 is connected to the air inlet ends of the plurality of connecting elements 242. The outlet ends of the plurality of connecting elements 242 are connected to the air inlet end of the air outlet element 230.

[0061] The radial dimension of the storage element 241 is larger than the inner diameter of the outlet end of the second air inlet pipe 220 , and the inner diameter of the connecting element 242 is smaller than the inner diameter of the outlet end of the second air inlet pipe 220 .

[0062] Illustratively, the storage element 241 may be an annular channel provided on the third component 203 , and the connecting element 242 may be a plurality of connecting channels provided on the fourth component 204 and connected to the storage element 241 .

[0063] The embodiment of the present disclosure is provided with a storage element 241. When the reaction gas is introduced into the second air inlet pipe 220, the reaction gas can be stored in the wafer storage element 241 and diffused around the annular structure to avoid the reaction gas from only diffusing from the outlet end of the second air inlet pipe 220 toward the reaction chamber. Furthermore, the embodiment of the present disclosure is provided with a connecting element 242, and the radial dimension of the storage element 241 is set to be larger than the inner diameter of the outlet end of the second air inlet pipe 220, and the inner diameter of the connecting element 242 is set to be smaller than the inner diameter of the outlet end of the second air inlet pipe 220, so that the speed at which the reaction gas enters the storage element 241 is greater than the speed at which the reaction gas enters the connecting element 242, so that the reaction gas can be evenly output from the connecting element 242 to the outlet element 230, so as to improve the uniformity of the gas in the reaction chamber.

[0064] In some examples, the first air intake pipe 210 includes a first air intake section 211 , a second air intake section 212 , and a third air intake section 213 that are connected in sequence;

[0065] The inner diameter of the second air inlet section 212 is larger than that of the first air inlet section 211 , the inner diameter of the third air inlet section 213 is larger than that of the second air inlet section 212 , and at least a portion of the third air inlet section 213 is tilted.

[0066] The embodiment of the present disclosure arranges the first air inlet pipe 210 to comprise a first air inlet section 211, a second air inlet section 212 and a third air inlet section 213 which are connected in sequence, and arranges the inner diameter of the second air inlet section 212 to be larger than the inner diameter of the first air inlet section 211, and the inner diameter of the third air inlet section 213 to be larger than the inner diameter of the second air inlet section 212, and arranges at least a portion of the third air inlet section 213 to be inclined. This enables the first reaction gas in the first air inlet pipe 210 to be uniformly diffused in the first air inlet pipe 210 through the first air inlet section 211 and the second air inlet section 212 in sequence, and then uniformly diffused into the air outlet piece through the inclined inner wall of the third air inlet section 213, thereby achieving the effect of uniformly diffusing the first reaction gas.

[0067] Exemplarily, the first air inlet pipe 210 further includes an inclined section 214;

[0068] The first end of the inclined section 214 is connected to the first air inlet section 211, and the second end of the inclined section 214 is connected to the second air inlet section 212. The inner diameter of the inclined section 214 gradually increases from the first end to the second end.

[0069] The third air inlet section 213 includes a first uniform area 213a, a connecting area 213b, and a second uniform area 213c, which are connected in sequence. The air inlet end of the first uniform area 213a is connected to the air outlet end of the second air inlet section 212. The inner diameter of the first uniform area 213a gradually increases from the air outlet end of the second air inlet section 212 to the connecting area 213c.

[0070] The two ends of the connecting area 213b are respectively connected to the first uniform area 213a and the second uniform area 213b. The inner diameter of the second uniform area 213b gradually increases from the gas outlet end of the connecting area 213c to the gas outlet end of the second uniform area 213c.

[0071] In the embodiment of the present disclosure, the provision of the inclined section 214, on the one hand, serves to connect the first air inlet section 211 and the second air inlet section 212. On the other hand, the inner diameter of the inclined section 214 is configured to gradually increase from the first end to the second end, thereby enabling the first reaction gas to be uniformly diffused along the inner wall of the inclined section 214. In the embodiment of the present disclosure, by configuring the third air inlet section 213 to include a first uniform region 213a, a connecting region 213b, and a second uniform region 213c that are sequentially connected, the first reaction gas can be uniformly diffused to the gas outlet member 230 through the first uniform region 213a and the second uniform region 213c.

[0072] In some other implementations, the pipeline integration mechanism 200 further includes a purge air intake pipe 250 , an air intake branch pipe 251 , and an air intake channel 252 ;

[0073] The purge air inlet pipe 250 is connected to one end of the air inlet channel 252. The air inlet channel 252 is configured as an annular structure. The other end of the air inlet channel 252 is connected to one end of a plurality of air inlet branch pipes 251. The other ends of the plurality of air inlet branch pipes 251 are connected to the plurality of second air inlet pipes 220.

[0074] The pipeline integration mechanism 200 further includes a purge exhaust pipe 260, an exhaust branch pipe 261 and an exhaust channel 262;

[0075] The purge exhaust pipe 260 is connected to one end of the exhaust channel 262. The exhaust channel 262 is configured as an annular structure. The other end of the exhaust channel 262 is connected to one end of a plurality of exhaust branch pipes 261. The other ends of the plurality of exhaust branch pipes 261 are connected to the plurality of second air inlet pipes 220.

[0076] The purge inlet pipe 250 is used to blow in purge gas, and the purge exhaust pipe 260 is used to discharge purge gas and impurity gas.

[0077] For example, the purge air intake pipe 250 may be provided in the second component 202 , the air intake passage 252 may also be provided in the second component 202 , and the air intake branch pipe 251 may be provided in the third component 203 .

[0078] For example, the purge exhaust pipe 260 may be provided in the first component 201 , the exhaust channel 262 may also be provided in the first component 201 , and the exhaust branch pipe 261 may be provided in the second component 202 .

[0079] For example, the purge gas may be an inert gas, such as nitrogen.

[0080] The embodiment of the present disclosure can purge the second air inlet pipe 220 by purging the air inlet pipe 250, the air inlet branch pipe 251, the air inlet channel 252 and the air inlet exhaust pipe 260, the exhaust branch pipe 261, and the exhaust channel 262, thereby effectively purging residual reaction gases (such as precursor A, precursor B1, precursor B2, etc.) and purging nitrogen to ensure the purity of atoms deposited on the wafer each time.

[0081] Exemplarily, the pipeline integration mechanism 200 further includes a first injection member 251a and a second injection member 261a;

[0082] A plurality of first injection members 251 a are detachably disposed in the intake branch pipe 251 , and an inner diameter of the first injection member 251 a is smaller than an inner diameter of the intake branch pipe 251 ;

[0083] A plurality of second injection members 261 a are detachably disposed in the exhaust branch pipe 261 , and an inner diameter of the second injection member 261 a is smaller than an inner diameter of the exhaust branch pipe 261 .

[0084] In a specific implementation, the first injection member 251a and the second injection member 261a can both be set as capillaries. When air intake is required to purge the second intake pipe 220, the purge exhaust pipe 260 is closed, and purge nitrogen is input into the intake end of the purge intake pipe 250. The purge nitrogen enters the multiple second intake pipes 220 through the intake channel 252 and the intake branch pipe 251. Since a capillary is provided at the intake branch pipe 251, the pressure of the purge nitrogen entering the intake branch pipe 251 from the intake channel 252 becomes greater, thereby increasing the purge force of the purge nitrogen on the second intake pipe 220. Furthermore, the embodiment of the present disclosure sets the inner diameter of the capillary to be smaller than the inner diameter of the air intake branch 251, thereby preventing the reaction gas from entering the purge air intake pipe 250 and other pipes connected to the purge air intake pipe 250 through the air intake channel 252 and causing pollution when the reaction gas is introduced into the second air intake pipe 220, thereby protecting the air intake channel 252, the purge air intake pipe 250 and other pipes connected to the purge air intake pipe 250.

[0085] Close the purge inlet pipe 250, and purge exhaust pipe 260 to discharge the purge gas and impurity gas in the second inlet pipe 220. The purge nitrogen and impurity gas in the second inlet pipe 220 enter the purge exhaust pipe 260 through the exhaust branch pipe 261 and the exhaust channel 262 in turn. Since the exhaust branch pipe 261 is provided with a capillary tube, and the inner diameter of the capillary tube is set to be smaller than the inner diameter of the exhaust branch pipe 261, it can avoid that when the reaction gas is introduced into the second inlet pipe 220, the reaction gas enters the purge exhaust pipe 260 and other pipes connected to the purge exhaust pipe 260 through the exhaust channel 262 and causes pollution, thereby protecting the exhaust channel 262, the purge exhaust pipe 260 and other pipes connected to the purge exhaust pipe 260.

[0086] The embodiment of the present disclosure utilizes the first ejection member 251a to enhance the purge force of the purge nitrogen gas on the second air intake pipe 220 and prevent contamination of the air intake passage 252, the purge air intake pipe 250, and other pipes connected to the purge air intake pipe 250. Furthermore, the embodiment of the present disclosure utilizes the second ejection member 261a to protect the exhaust passage 262, the purge exhaust pipe 260, and other pipes connected to the purge exhaust pipe 260.

[0087] FIG4 is a partial cross-sectional view of the structure in FIG1 ; FIG5 is a cross-sectional view of the structure in FIG1 .

[0088] 1 , 4 and 5 , in another implementation, the inner diameter of the reaction chamber gradually increases from the air inlet end toward the wafer placement position 122 a .

[0089] Exemplarily, the reaction chamber is configured as a conical structure, wherein the angle between the conical surface and the central axis of the reaction chamber is 20° to 70°. For example, the angle between the conical surface and the central axis of the reaction chamber can be 20°, 25°, 30°, 60°, and 70°.

[0090] The embodiment of the present disclosure gradually increases the inner diameter of the reaction chamber from the air inlet end toward the wafer placement position 122a, so that the reaction gas can be evenly diffused along the inner wall of the reaction chamber to the wafer placement position 122a, so that the deposition layer on the surface of the wafer is uniform, thereby improving the coating quality of the wafer.

[0091] In some examples, the direction from the air inlet end to the wafer placement position 122a of the reaction chamber includes at least a first diffusion area 1211, a buffer area 1221, a second diffusion area 1222 and a placement area 1223;

[0092] The inner diameter of the first diffusion zone 1211 gradually increases from the air inlet end toward the buffer zone 1221 ;

[0093] The buffer zone 1221 extends along the end of the first diffusion zone 1211 facing away from the air inlet end toward the second diffusion zone 1222 ;

[0094] The inner diameter of the second diffusion region 1222 gradually increases from the end of the buffer region 1221 facing away from the first diffusion region 1211 toward the placement region 1223 ;

[0095] The placement area 1223 extends along one end of the second diffusion area 1222 facing away from the buffer zone 1221 toward the wafer placement position 122 a ; the wafer placement position 122 a is disposed at the bottom of the placement area 1223 .

[0096] Exemplarily, the first diffusion region 1211 and the second diffusion region 1222 are configured as conical structures, and the buffer region 1221 and the placement region 1223 are configured as straight cylindrical structures.

[0097] For example, the angles between the conical surfaces of the first diffusion region 1211 and the second diffusion region 1222 and the central axis of the reaction chamber are 20° to 70°. For example, the angles between the conical surfaces and the central axis of the reaction chamber can be 20°, 25°, 30°, 60°, and 70°.

[0098] The embodiment of the present disclosure provides a first diffusion zone 1211, a buffer zone 1221, a second diffusion zone 1222 and a placement zone 1223 in the direction from the air inlet end to the wafer placement position 122a of the reaction chamber. Compared with only providing the first diffusion zone 1211, the area of ​​the reaction chamber can be reduced. When the volume of the introduced reaction gas remains unchanged, the smaller the area of ​​the reaction chamber, the more the concentration of the reaction gas and the controllability of the reaction gas can be guaranteed, so that the reaction gas is evenly deposited on the wafer surface for reaction, thereby improving the uniformity of the deposition layer on the wafer surface.

[0099] Exemplarily, the reaction mechanism 100 includes a reaction outer shell 110 and a reaction inner shell 120 , wherein the reaction outer shell 110 forms a receiving chamber 111 , and the reaction inner shell 120 is disposed in the receiving chamber 111 ;

[0100] The reaction inner shell 120 includes a first shell 121 and a second shell 122. One end of the first shell 121 is connected to the pipeline integration mechanism 200, and the other end of the first shell 121 extends toward the wafer placement position 122a.

[0101] A first diffusion area 1211 is formed in the first shell 121 ; a buffer area 1221 , a second diffusion area 1222 and a placement area 1223 are formed in the second shell 122 ;

[0102] The side wall of the reaction mechanism 100 is further provided with a wafer conveying channel communicating with the accommodating chamber 111 . The second shell 122 can reciprocate in the vertical direction so that the wafer is placed into the wafer placement position 122 a of the placement area 1223 through the wafer conveying channel.

[0103] Illustratively, the outer side wall of the end of the first shell 121 facing away from the pipeline integration mechanism 200 is configured as a vertical cylindrical surface, so as to facilitate relative movement with the second shell 122 when the second shell 122 reciprocates in the vertical direction.

[0104] Exemplarily, the placement area 1223 is provided with a wafer placement position 122a, which is provided at the bottom of the placement area 1223. The wafer placement position 122a can be provided as a wafer carrier, one end of which is provided on the inner wall of the reaction chamber, and the other end of which extends toward the central axis of the reaction chamber.

[0105] During specific implementation, the second shell 122 moves in the vertical direction toward the pipeline integration mechanism 200. When the wafer placement position 122a moves to the middle position of the wafer conveying channel, the second shell 122 stops moving, and the wafer transfer component will be transferred from the wafer conveying channel to the reaction chamber, just located on the upper part of the wafer supporting plate. The wafer transfer component drags the wafer downward, and after the wafer completely falls onto the wafer supporting plate and is separated from the wafer transfer component, the wafer transfer component is moved out of the wafer conveying channel, and the second shell 122 is moved in the vertical direction away from the pipeline integration mechanism 200 until it moves to the preset position.

[0106] In the embodiment of the present disclosure, the first shell 121 and the second shell 122 are provided, and a wafer conveying channel is provided on the side wall of the reaction mechanism 100. The second shell 122 can move back and forth in the vertical direction, which facilitates the conveyance of wafers.

[0107] FIG6 is a partial structural schematic diagram 1 in FIG1 ; FIG7 is a partial structural schematic diagram 2 in FIG1 ; FIG8 is a partial structural schematic diagram 3 in FIG1 ; and FIG9 is a top view in FIG1 .

[0108] 6 to 9 , in some examples, the wafer reaction apparatus further includes a lifting mechanism 300 , and the lifting mechanism 300 includes a movable frame 310 , a driving member 320 , a movable rod 330 , and a guide seal 340 ;

[0109] The fixed end of the driving member 320 is disposed on the reaction housing 110 , and the lifting end of the driving member 320 is disposed on the movable frame 310 ;

[0110] One end of the guide seal 340 is fixed to the movable frame 310, and the other end of the guide seal 340 is fixed to the reaction housing 110. One end of the movable rod 330 is connected to the movable frame 310, and the other end of the movable rod 330 passes through the guide seal 340, the accommodating cavity 111, and is connected to the second housing 122.

[0111] The lifting end is configured to drive the movable frame 310 to move in the vertical direction, so that the movable rod 330 drives the second shell 122 to move up and down in the vertical direction.

[0112] Exemplarily, the guide seal 340 includes a sealing bellows 341 and a straight tube 342, one end of the sealing bellows 341 is connected to the movable frame 310, the other end of the sealing bellows 341 is connected to one end of the straight tube 342, the other end of the straight tube 342 is connected to the upper end of the reaction shell 110, one end of the interactive rod is connected to the movable frame 310, and the other end of the movable rod 330 passes through the sealing bellows 341, the straight tube 342, the accommodating chamber 111 and the second shell 122 in sequence.

[0113] In a specific implementation, the driving member 320 is usually arranged on one side of the movable frame 310. In order to improve the stability of the wafer reaction device, the wafer reaction device is further provided with a support mechanism 400. The support mechanism 400 includes a sleeve 410 and an extended sliding rod 420. One end of the sleeve 410 is connected to the reaction housing 110, and the other end of the sleeve 410 extends toward the movable frame 310. One end of the extended sliding rod 420 is connected to the movable frame 310, and the other end of the extended sliding rod 420 passes through the sleeve 410 and is connected to the reaction housing 110. The arrangement of the sleeve 410 and the extended sliding rod 420 can further improve the stability of the reciprocating movement of the second shell 122 in the vertical direction, thereby improving the stability of the wafer during the transmission process.

[0114] The embodiment of the present disclosure ensures that the second housing 122 can move stably in the vertical direction by disposing the lifting mechanism 300 and the supporting mechanism 400, so that the wafer can be stably placed into the reaction chamber or taken out of the reaction chamber.

[0115] FIG10 is a fourth schematic diagram of a partial structure in FIG1 .

[0116] In another implementation, referring to FIG10 , an annular first protrusion 122 b is provided around the outer side wall of the second housing 122 ;

[0117] The lifting mechanism 300 further includes an adjustment assembly 350 , which includes an adjustment rod 351 , a first adjustment knob 352 , a first locking nut 353 , a first washer 354 , a second adjustment knob 355 , a second locking nut 356 , and a second washer 357 ;

[0118] One end of the adjusting rod 351 is rotatably connected to the other end of the movable rod 330 , and the other end of the adjusting rod 351 passes through the first protrusion 122 b ;

[0119] One end of the first adjusting knob 352 abuts against one side of the first protrusion 122b via a first washer, and the other end of the first adjusting knob abuts against the first locking nut 353. The first locking nut 353, the first adjusting knob 352, and the first washer 354 are sequentially sleeved on the outer wall of the adjusting rod 351.

[0120] One end of the second adjusting knob 355 abuts against the other side of the first protrusion 122b through the second gasket, and the other end of the second adjusting knob 355 abuts against the second locking nut 356, and the second gasket 357, the second adjusting knob 355 and the second locking nut 356 are respectively sleeved on the outer wall of the adjusting rod 351.

[0121] Illustratively, one end of the adjusting rod 351 is provided with a thread, and the other end of the movable rod 330 is provided with a threaded hole that is mutually adapted to the adjusting rod 351 , and the adjusting hole can rotate along the threaded hole.

[0122] Illustratively, a plurality of movable rods 330 are disposed around the second shell 122 , and further, a plurality of adjustment assemblies 350 are disposed around the second shell 122 .

[0123] Exemplarily, an annular second protrusion 122c is further provided on the outer side wall surrounding the second shell 122. The second protrusion 122c is provided below the first protrusion 122b. A connecting piece is provided between the first protrusion 122b and the second protrusion 122c so that the second protrusion 122c supports the first protrusion 122b.

[0124] During specific implementation, when it is necessary to adjust the adjustment rod 351 toward the movable rod 330, the second locking nut 356 and the second adjusting knob 355 can be loosened in sequence, and the adjustment rod 351 can be rotated to move the adjustment rod 351 toward the movable rod 330. When the adjustment rod 351 moves to the preset position, the second gasket 357 is abutted against the other side of the first protrusion 122b, the second adjusting knob 355 is abutted against the second gasket 357 and the second adjusting knob 355 is tightened, and then the second locking nut 356 is abutted against the second adjusting knob 355 and the second locking nut 356 is tightened. Then, after loosening the first locking nut 353 and the first adjusting knob 352, the first washer 354 is brought into contact with one side of the first protrusion 122b. Then, the second adjusting knob 355 is brought into contact with the first washer 354 and the first adjusting knob 352 is tightened. Finally, the first locking nut 353 is brought into contact with the first adjusting knob 352 and the first locking nut 353 is tightened. It should be noted that when the adjusting rod 351 needs to be adjusted away from the movable rod 330, the method is similar to that of adjusting the adjusting rod 351 toward the movable rod 330.

[0125] The embodiment of the present disclosure, through the provision of the adjustment rod 351, can adjust the position of the second shell 122 in the vertical direction through the adjustment rod 351, further adjust the position of the wafer carrier, and then adjust the position of the wafer to keep the wafer level, thereby enabling uniform deposition on the wafer surface and improving the quality of wafer coating. The embodiment of the present disclosure, through the provision of the first adjustment knob 352 and the second adjustment knob 355, can fix the position of the adjustment rod 351; the embodiment of the present disclosure, through the provision of the first locking nut 353 and the second locking nut 356, can fix the first adjustment knob 352 and the second adjustment knob 355, thereby improving the stability of the adjustment assembly 350. The embodiment of the present disclosure, through the provision of the first gasket 354 and the second gasket 357, reduces pressure and prevents loosening, and the adjustment assembly 350 plays a certain protective role.

[0126] FIG11 is a schematic structural diagram of the ceramic shunt in FIG1 assembled to the outer shell.

[0127] 11 , in some examples, the wafer reaction apparatus further includes a ceramic shunt 500 ;

[0128] The ceramic diverter 500 is disposed on the top of the first housing 121. The gas outlet end of the ceramic diverter 500 is configured as a cylindrical structure. The gas outlet end is provided with a plurality of air diffusion holes 510. The air diffusion holes 510 are connected to the accommodating cavity 111.

[0129] The ceramic diverter 500 is used to transport inert gas into the accommodating chamber 111 so that the pressure in the accommodating chamber 111 is greater than the pressure in the reaction chamber.

[0130] During the specific implementation, the pipeline integration mechanism 200 is used to introduce inert gas (nitrogen) and reaction gases such as precursor A, precursor B1, and precursor B2 into the reaction chamber. At the same time, the ceramic diverter 500 is used to transport inert gas (nitrogen) into the containing chamber 111 and ensure that the pressure in the containing chamber 111 is greater than the pressure in the reaction chamber to avoid overflow of the reaction gas in the reaction chamber.

[0131] The embodiment of the present disclosure, through the provision of the ceramic diverter 500, can transport inert gas into the accommodating chamber 111 through the ceramic diverter 500, so that the pressure in the accommodating chamber 111 is greater than the pressure in the reaction chamber, thereby preventing the reaction gas in the reaction chamber from overflowing through the gap between the first shell 121 and the second shell 122.

[0132] 4 , in some other implementations, the reaction inner shell 120 further includes a third shell 123 , which extends from the bottom of the wafer placement position 122 a toward the second shell 122 and is sleeved on the outer wall of the second shell 122 ;

[0133] The wafer reaction device further includes a first heating mechanism 600 and a second heating mechanism 700;

[0134] The first heating mechanism 600 is disposed between the third shell 123 and the reaction housing 110 , and the second heating mechanism 700 is disposed below the wafer placement position 122 a ; both the first heating mechanism 600 and the second heating mechanism 700 are used to heat the wafer.

[0135] In practice, to prevent the third housing 123 from overheating and causing damage to personnel due to accidental contact, the heating temperature of the first heating mechanism 600 can be set between 36°C and 40°C to maintain the temperature of the reaction chamber. Furthermore, the heating temperature of the second heating mechanism 700 can be set to a higher temperature than required for wafer coating, thereby uniformly heating the wafers.

[0136] Illustratively, the first heating mechanism 600 includes a heat insulating member and a heating assembly, wherein the heating assembly can be configured as a heating wire, a heat insulating member is provided on the inner wall of the reaction shell 110 , and the heating assembly is provided between the heat insulating member and the third shell 123 .

[0137] The embodiment of the present disclosure can keep the reaction chamber warm by disposing the first heating mechanism 600. The second heating mechanism 700 is disposed below the wafer placement position 122a, thereby uniformly heating the wafer and improving the quality of wafer coating.

[0138] FIG12 is a schematic structural diagram of the heat conducting plate in FIG4 .

[0139] Exemplarily, with continued reference to FIG. 4 and FIG. 12 , the second heating mechanism 700 includes a carrier 710 , a heating wire 720 and a heat conducting plate 730 ;

[0140] The carrier 710 is disposed below the wafer placement position 122a, and the heat conducting plate 730 is disposed between the carrier 710 and the wafer placement position 122a. The carrier 710 and the heat conducting plate 730 are integrally formed. The heating wire 720 is disposed between the carrier 710 and the heat conducting plate 730. The carrier 710 is connected to the bottom of the third housing 123 via a plurality of annular connecting posts.

[0141] The heat conducting plate 730 includes an inner circle and an annular area arranged outside the inner circle. The inner circle and the heating wire 720 are arranged correspondingly. The annular area is provided with a plurality of air holes 731.

[0142] Exemplarily, the support member 710 and the heat conducting plate 730 are integrally formed, and a connecting protrusion extending toward the heat conducting plate 730 is provided on the outer wall of the support member 710, connecting the support member 710 and the heat conducting plate 730 via the connecting protrusion. The heating wire 720 is disposed between the support member 710 and the heat conducting plate 730, and the heating wire is disposed corresponding to the inner circle.

[0143] For example, the heating wires 720 may be arranged in an annular ring shape, and the distance between two adjacent rings of heating wires 720 is equal, so as to achieve uniform heating of the wafer.

[0144] For another example, the apertures of the two horizontally intermediate regions of the air vent hole 731 are larger than the apertures of the remaining regions. In a specific implementation, the two horizontally intermediate regions of the air vent hole 731 are set as the first region, and the remaining regions are set as the second region. The apertures of the air vent holes 731 in the first region are larger than the apertures of the air vent holes 731 in the second region. The first region and the wafer carrier provided at the wafer placement position 122a are provided in correspondence with each other.

[0145] For another example, a support base is provided below the carrier 710 , and the support base is used to support the carrier 710 . The support base is formed with a vacuum channel, wherein the vacuum channel is connected to the reaction chamber for evacuating the reaction chamber.

[0146] The disclosed embodiment configures the heat conducting plate 730 as an annular structure, with the inner ring of the annular structure corresponding to the heating wire 720. This allows the heating wire 720 to heat the wafer directly at the bottom of the wafer, achieving uniform heating of the wafer while also improving heating efficiency. The disclosed embodiment also provides multiple air vents 731 on the surface of the heat conducting plate 730 to vent excess gas from the reaction chamber, preventing the reaction gas from corroding the reaction chamber.

[0147] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present disclosure, rather than to limit them. Although the present disclosure has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the various embodiments of the present disclosure.

Claims

1. A wafer reaction device, comprising: A reaction mechanism, wherein the reaction mechanism is formed with a reaction chamber, at least a portion of the inner wall of the reaction chamber is inclined, and a wafer placement position for holding a wafer is provided in the reaction chamber; A pipeline integration mechanism, the pipeline integration mechanism comprising a first air inlet pipe, multiple second air inlet pipes and an air outlet piece, the first air inlet pipe and the multiple second air inlet pipes are used to respectively transport different reaction gases into the reaction chamber, the outlet end of the first air inlet pipe and the outlet ends of the multiple second air inlet pipes are both connected to the air inlet end of the air outlet piece, the air outlet end of the air outlet piece and the air inlet end of the reaction chamber are correspondingly arranged, and the air outlet end of the air outlet piece is provided with multiple air outlet holes to allow the reaction gas to diffuse along the inner wall of the reaction chamber to the wafer placement position; The pipeline integration mechanism also includes a communication component; The connecting component is configured as an annular structure, and the outlet ends of the plurality of second air inlet pipes are connected to the air outlet member via the connecting component, and the connecting component is configured to surround the first air inlet pipe; The communication component includes a storage component and a communication component; The storage element is provided with an annular structure, the outlet ends of the plurality of second air inlet pipes are connected to the air inlet end of the storage element, the outlet end of the storage element is connected to the air inlet ends of the plurality of the connecting elements, and the outlet ends of the plurality of the connecting elements are connected to the air inlet end of the air outlet element; Wherein, the radial dimension of the storage element is larger than the inner diameter of the air outlet end of the second air inlet pipe, and the inner diameter of the connecting element is smaller than the inner diameter of the air outlet end of the second air inlet pipe.

2. The wafer reaction device according to claim 1, characterized in that: The pipeline integration mechanism also includes a purge intake pipe, an intake branch pipe and an intake channel; The purge air intake pipe is connected to one end of the air intake channel, the air intake channel is configured as an annular structure, and the other end of the air intake channel is connected to one end of the plurality of air intake branch pipes, and the other ends of the plurality of air intake branch pipes are connected to the plurality of second air intake pipes respectively; The pipeline integration mechanism also includes a purge exhaust pipe, an exhaust branch pipe and an exhaust channel; The purge exhaust pipe is connected to one end of the exhaust channel, the exhaust channel is configured as an annular structure, and the other end of the exhaust channel is connected to one end of the plurality of exhaust branch pipes, and the other ends of the plurality of exhaust branch pipes are connected to the plurality of second intake pipes respectively; The purge inlet pipe is used to blow in purge gas, and the purge exhaust pipe is used to discharge purge gas and impurity gas.

3. The wafer reaction device according to claim 2, characterized in that: The pipeline integration mechanism further includes a first injection member and a second injection member; A plurality of first injection members are detachably disposed in the intake branch pipe, and an inner diameter of the first injection member is smaller than an inner diameter of the intake branch pipe; A plurality of second injection members are detachably disposed in the exhaust branch pipe, and an inner diameter of the second injection member is smaller than an inner diameter of the exhaust branch pipe.

4. A wafer reaction device according to claim 1, wherein: The first air intake pipe comprises a first air intake section, a second air intake section and a third air intake section which are connected in sequence; The inner diameter of the second air intake section is larger than that of the first air intake section, the inner diameter of the third air intake section is larger than that of the second air intake section, and at least a portion of the third air intake section is inclined.

5. A wafer reaction device according to claim 4, wherein: The first air inlet pipe further includes an inclined section; The first end of the inclined section is connected to the first air inlet section, the second end of the inclined section is connected to the second air inlet section, and the inner diameter of the inclined section gradually increases from the first end to the second end; The third air inlet section includes a first uniform area, a connecting area, and a second uniform area that are connected in sequence. The air inlet end of the first uniform area is connected to the air outlet end of the second air inlet section. The inner diameter of the first uniform area gradually increases from the air outlet end of the second air inlet section to the connecting area. Two ends of the connection zone are respectively connected to the first uniform zone and the second uniform zone, and the inner diameter of the second uniform zone gradually increases from the gas outlet end of the connection zone to the gas outlet end of the second uniform zone.

6. A wafer reaction device according to any one of claims 1 to 5, wherein: The inner diameter of the reaction chamber gradually increases from the air inlet end toward the wafer placement position.

7. A wafer reaction device according to any one of claims 1 to 5, wherein: The direction from the air inlet end to the wafer placement position of the reaction chamber at least includes a first diffusion area, a buffer area, a second diffusion area and a placement area; Wherein, the inner diameter of the first diffusion zone gradually increases from the air inlet end toward the buffer zone; The buffer zone extends along an end of the first diffusion zone facing away from the air inlet end toward the second diffusion zone; The inner diameter of the second diffusion region gradually increases from the end of the buffer region facing away from the first diffusion region toward the placement region; The placement area extends along one end of the second diffusion area facing away from the buffer zone toward the wafer placement position; the wafer placement position is arranged at the bottom of the placement area.

8. The wafer reaction device according to claim 7, wherein: The reaction mechanism comprises a reaction outer shell and a reaction inner shell, wherein the reaction outer shell forms a receiving cavity, and the reaction inner shell is arranged in the receiving cavity; The reaction inner shell includes a first shell and a second shell, one end of the first shell is connected to the pipeline integration mechanism, and the other end of the first shell extends toward the wafer placement position; The first diffusion area is formed in the first shell; the buffer area, the second diffusion area and the placement area are formed in the second shell; The side wall of the reaction mechanism is also provided with a wafer conveying channel connected to the accommodating cavity, and the second shell can move back and forth in the vertical direction so that the wafer is placed into the wafer placement position of the placement area through the wafer conveying channel.

9. The wafer reaction device according to claim 8, wherein: The wafer reaction device further comprises a lifting mechanism, which comprises a movable frame, a driving member, a movable rod and a guide sealing member; The fixed end of the driving member is arranged on the reaction housing, and the lifting end of the driving member is arranged on the movable frame; One end of the guide seal is fixed to the movable frame, and the other end of the guide seal is fixed to the reaction shell. One end of the movable rod is connected to the movable frame, and the other end of the movable rod passes through the guide seal, the accommodating cavity and the second shell in sequence. The lifting end is configured to drive the movable frame to move in a vertical direction, so that the movable rod drives the second shell to move up and down in the vertical direction.

10. The wafer reaction device according to claim 9, wherein: A first annular protrusion is provided around the outer side wall of the second shell; The lifting mechanism further includes an adjustment assembly, which includes an adjustment rod, a first adjustment knob, a first locking nut, a first washer, a second adjustment knob, a second locking nut, and a second washer; One end of the adjusting rod is rotatably connected to the other end of the movable rod, and the other end of the adjusting rod passes through the first protrusion; One end of the first adjusting knob abuts against one side of the first protrusion through the first washer, and the other end of the first adjusting knob abuts against the first locking nut, and the first locking nut, the first adjusting knob and the first washer are sequentially sleeved on the outer side wall of the adjusting rod; One end of the second adjusting knob abuts against the other side of the first protrusion through the second gasket, the other end of the second adjusting knob abuts against the second locking nut, and the second gasket, the second adjusting knob and the second locking nut are sequentially sleeved on the outer side wall of the adjusting rod.

11. The wafer reaction device according to claim 10, wherein: The wafer reaction device also includes a ceramic shunt; The ceramic diverter is arranged on the top of the first shell, the gas outlet end of the ceramic diverter is arranged in a cylindrical structure, the gas outlet end is provided with a plurality of gas diffusion holes, and the gas diffusion holes are connected to the accommodating cavity; The ceramic diverter is used to transport inert gas into the accommodating chamber so that the pressure in the accommodating chamber is greater than the pressure in the reaction chamber.

12. The wafer reaction device according to claim 11, wherein: The reaction inner shell further includes a third shell, which extends from the bottom of the wafer placement position toward the second shell and is sleeved on the outer wall of the second shell; The wafer reaction device further includes a first heating mechanism and a second heating mechanism; The first heating mechanism is arranged between the third shell and the reaction housing, and the second heating mechanism is arranged below the wafer placement position; the first heating mechanism and the second heating mechanism are both used to heat the wafer.

13. The wafer reaction device according to claim 12, wherein: The second heating mechanism includes a carrier, a heating wire and a heat conducting plate; The carrier is arranged below the wafer placement position, the heat conducting plate is arranged between the carrier and the wafer placement position, and the carrier and the heat conducting plate are integrally formed, the heating wire is arranged between the carrier and the heat conducting plate, and the carrier is connected to the bottom of the third shell through a plurality of annular connecting columns; The heat conducting plate includes an inner circle and an annular area arranged outside the inner circle. The inner circle and the heating wire are arranged correspondingly, and the annular area is provided with a plurality of air holes.

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