Substrate cleaning device and wet apparatus

By covering the nozzles and outer surfaces of the fluid pipes of the substrate cleaning device with a heating film layer, the problem of sulfuric acid being heated to a high temperature is solved, the efficiency of photoresist removal is improved, the use of chemical liquid is saved, and the life of the equipment is extended.

WO2025200949A1PCT designated stage Publication Date: 2025-10-02ACM RES (SHANGHAI) INC
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Patent Information

Application Number
PCT/CN2025/080358
Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
Priority Date
2024-03-27
Filing Date
2025-03-04
Publication Date
2025-10-02

AI Technical Summary

Technical Problem

In the prior art, how to heat sulfuric acid to a high temperature to meet the process requirements for photoresist removal has not been effectively solved.

Method used

A heating film layer is covered on the outer surface of the nozzle and the first fluid pipeline of the substrate cleaning device, and the fluid is heated to a target temperature, for example, above 190°C, through the heating film layer. High-temperature resistant materials and a specific fluid pipeline structure are used to achieve high-temperature heating.

Benefits of technology

The efficient heating of sulfuric acid to a high temperature is achieved, the efficiency of photoresist removal is improved, the usage of sulfuric acid and hydrogen peroxide is saved, and the service life of the equipment is extended.

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Abstract

Disclosed in the present invention are a substrate cleaning device and a wet apparatus. The substrate cleaning device comprises a nozzle and a swing arm, wherein the nozzle is arranged at one end of the swing arm, a first fluid pipe is provided in an inner cavity of the swing arm, the first fluid pipe is in communication with the nozzle to supply a first fluid to the nozzle, an outer surface of a pipe wall of the first fluid pipe is covered by a heating film layer, and the heating film layer is configured to transfer heat to the first fluid by means of the pipe wall of the fluid pipe, such that the temperature of the first fluid reaches a target temperature. In the present invention, the first fluid can be heated to an ultrahigh temperature so as to meet process requirements.
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Description

Substrate cleaning equipment and wet process equipment Technical Field

[0001] The present application relates to the field of semiconductor manufacturing technology, and in particular to a substrate cleaning device and wet process equipment. Background Art

[0002] The basic process of photolithography generally includes three steps: coating, exposure, and development. The purpose of the coating process is to create a thin, uniform, and defect-free photoresist layer on the substrate surface. Exposure involves transferring the pattern on the photomask to the photoresist layer using an exposure lamp or other radiation source. After exposure, the device or circuit pattern is recorded on the photoresist layer in the form of exposed and unexposed areas. After development, the photomask pattern is fixed on the photoresist layer. Following the photolithography process, the photoresist layer can be used as a mask for etching or ion implantation. After etching or ion implantation, the photoresist on the substrate surface must be removed.

[0003] The most common solution used for wet cleaning of photoresist is SPM (Sulfuric Acid Hydrogen Peroxide Mixture). The cleaning process involves injecting hydrogen peroxide into a sulfuric acid solution. The hydrogen peroxide and sulfuric acid react exothermically to form a high-temperature SPM solution, which is then sprayed onto the photoresist surface. The SPM solution reacts with the photoresist, removing it. The substrate surface is then rinsed with deionized water and dried with nitrogen. Recent research indicates that heating sulfuric acid to a high temperature (e.g., above 180°C) facilitates the removal of photoresist after high-dose ion implantation.

[0004] Therefore, it is necessary to provide a substrate cleaning device and a wet process equipment to solve the problem of how to heat sulfuric acid to a high temperature. Summary of the Invention

[0005] The purpose of the present invention is to solve the problem of how to heat sulfuric acid to a high temperature in the prior art.

[0006] To solve the above problems, an embodiment of the present invention provides a substrate cleaning device, comprising:

[0007] nozzle;

[0008] A swing arm, a nozzle is arranged at one end of the swing arm, a first fluid pipe is arranged in the inner cavity of the swing arm, the first fluid pipe is connected to the nozzle, and is used to pass the first fluid into the nozzle, and the outer surface of the tube wall of the first fluid pipe is covered with a heating film layer, and the heating film layer is used to transfer heat to the first fluid through the tube wall of the fluid pipe, so that the temperature of the first fluid reaches the target temperature.

[0009] An embodiment of the present invention provides a wet process device, comprising:

[0010] chamber;

[0011] a substrate supporting device, disposed inside the chamber and configured to support the substrate; and

[0012] In the above-mentioned substrate cleaning device, the nozzle of the substrate cleaning device is used to supply fluid to the substrate.

[0013] The substrate cleaning device provided in the present application has a first fluid tube arranged in the inner cavity of the swing arm, and the outer surface of the tube wall of the first fluid tube is covered with a heating film layer for heating the first fluid in the first fluid tube, so that the first fluid can be heated to a high temperature to meet the process requirements.

[0014] Other features and corresponding beneficial effects of the present invention are described in the latter part of the specification, and it should be understood that at least some of the beneficial effects become obvious from the description in the specification of the present invention.

[0015] Summary of the Figures

[0016] The features and performance of the present application are further described by the following examples and drawings.

[0017] FIG1 is a cross-sectional view of a substrate cleaning device according to Example 1 of the present application from a front perspective;

[0018] FIG2 is a cross-sectional view of the first fluid pipe of Example 1 of the present application;

[0019] FIG3 is a cross-sectional view of the substrate cleaning device according to Example 1 of the present application from a top view;

[0020] FIG4 is a partial cross-sectional view of the first fluid pipe in Example 1 of the present application from a front perspective;

[0021] FIG5 is a schematic diagram of a first fluid pipe according to Example 2 of the present application;

[0022] FIG6 is a cross-sectional view of a substrate cleaning device according to Example 2 of the present application; and

[0023] FIG7 is a schematic diagram of the wet process equipment of Example 3 of the present application.

[0024] Preferred embodiment of this application

[0025] The following is an explanation of the embodiments of the present invention by specific specific examples. Those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. Although the description of the present invention will be introduced in conjunction with the preferred embodiment, this does not mean that the features of this invention are limited to this embodiment. On the contrary, the purpose of introducing the invention in conjunction with the embodiment is to cover other options or modifications that may be extended based on the claims of the present invention. In order to provide a deep understanding of the present invention, the following description will contain many specific details. The present invention can also be implemented without using these details. In addition, in order to avoid confusion or blurring the focus of the present invention, some specific details will be omitted in the description. It should be noted that the embodiments of the present invention and the features in the embodiments can be combined with each other without conflict.

[0026] It should be noted that in this specification, similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, it does not need to be further defined or explained in subsequent drawings.

[0027] The technical solution of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the embodiments described are only some embodiments of the present invention, not all embodiments. All other embodiments obtained by ordinary technicians in this field based on the embodiments of the present invention without making any creative efforts shall fall within the scope of protection of the present invention.

[0028] In the description of the present invention, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings and are intended solely to facilitate and simplify the description of the present invention. They are not intended to indicate or imply that the devices or components referred to must have, be constructed, or operate in a specific orientation, and therefore should not be construed as limitations on the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0029] In the description of the present invention, it should be noted that, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "connected" should be understood in a broad sense. For example, they may refer to fixed, detachable, or integral connections; mechanical or electrical connections; direct or indirect connections through an intermediate medium; and internal communication between two components. Those skilled in the art will understand the specific meanings of the above terms in the present invention based on the specific circumstances.

[0030] To make the objectives, technical solutions and advantages of the present invention more clear, the embodiments of the present invention will be described in further detail below with reference to the accompanying drawings.

[0031] Example 1:

[0032] FIG1 shows a cross-sectional view of a substrate cleaning device according to Example 1 of the present application from a main viewing angle; FIG2 shows a cross-sectional view of a first fluid pipe according to Example 1 of the present application.

[0033] Referring to Figures 1 and 2, the substrate cleaning device 1 provided herein includes a nozzle 100 and a swing arm 200. The nozzle 100 is disposed at one end of the swing arm 200. A first fluid tube 210 is disposed within the inner cavity of the swing arm 200. The first fluid tube 210 communicates with the nozzle 100 and is used to introduce a first fluid into the nozzle. The outer surface of the first fluid tube 210 is covered with a heating film 220. Specifically, the heating film 220 has a silver electrode 221 for electrical connection to a wire. One end of the wire is connected to the silver electrode 221, and the other end is connected to a power source, thereby causing the heating film 220 to generate heat when energized. When energized, the heating film 220 transfers heat through the wall of the fluid tube to the first fluid, causing the temperature of the first fluid flowing from the first fluid tube 210 to the nozzle 100 to reach a target temperature, such as an ultra-high temperature of above 190°C, to meet process requirements. In this embodiment, the heating film 220 is made of a nanomaterial and is coated on the outer surface of the first fluid tube 210 using a coating process. The nozzle 100 and the first fluid pipe 210 are directly connected by welding. Both the nozzle 100 and the first fluid pipe 210 are made of high-purity quartz material that is resistant to high temperatures, thus being able to withstand ultra-high temperatures of 200° C. The first fluid may be sulfuric acid (H 2 SO 4 ).

[0034] In addition, the present application integrates the heating film layer 220 into the inner cavity of the swing arm 200 , which can reduce the heat loss of the heating film layer 220 .

[0035] In some embodiments, as shown in Figure 1 , the first fluid pipe 210 comprises a straight pipe. As shown in Figure 2 , the cross-section of the first fluid pipe 210 is annular.

[0036] 3 shows a cross-sectional view of the substrate cleaning device of Example 1 of the present application from a top view perspective; FIG. 4 shows a partial cross-sectional view of the first fluid pipe of Example 1 of the present application from a front view perspective.

[0037] In some embodiments, referring to Figures 1, 3, and 4, the first fluid pipe 210 has a first end wall 2101 and a second end wall 2102 that oppose each other. An inlet 2103 of the first fluid pipe 210 is located in the first end wall 2101, and an outlet 2104 of the first fluid pipe 210 is located in the second end wall 2102. In the height direction of the substrate cleaning apparatus, the outlet 2104 is higher than the inlet 2103. In this embodiment, the high position of the outlet 2104 allows the first fluid in the first fluid pipe 210 to flow out more slowly, thereby heating the first fluid more fully. As shown in Figures 3 and 4, the substrate cleaning apparatus further includes a flow baffle 211 disposed within the first fluid pipe 210 and proximate to the inlet 2103 of the first fluid pipe 210. Specifically, the flow blocking member 211 includes a connecting rod 2111 and a stopper 2112. The first end of the connecting rod 2111 is disposed on the first end wall 2101, and the second end of the connecting rod 2111 extends toward the second end wall 2102 and is connected to the stopper 2112. In the direction in which the connecting rod 2111 extends, the stopper 2112 is located directly in front of the inlet 2103 of the first fluid pipe 210 and is used to disperse the first fluid entering through the inlet 2103. The dotted arrows in Figures 3 and 4 indicate the first fluid dispersion path defined by the stopper 2112, which facilitates sufficient heating of the first fluid.

[0038] In some embodiments, as shown in Figure 3, the swing arm 200 further includes a mounting member for mounting the first fluid tube 210 within the inner cavity of the swing arm 200. In this embodiment, the mounting member includes a support block 231 and a fixing block 232. Two support blocks 231 are provided, each supporting the ends of the first fluid tube 210. Two fixing blocks 232 are provided, one fixed to each end of the swing arm 200 and abutting against each of the two support blocks 231, thereby securing and limiting the first fluid tube 210.

[0039] Referring again to FIG. 1 , in some embodiments, the substrate cleaning apparatus 1 further includes a first temperature sensor 310 and a second temperature sensor 320. The first temperature sensor 310 is disposed on the first fluid pipe 210 near the inlet 2103 and is configured to detect the temperature of the first fluid entering the first fluid pipe 210. The second temperature sensor 320 is disposed on the first fluid pipe 210 near the outlet 2104 and is configured to detect the temperature of the first fluid exiting the first fluid pipe 210. The first temperature sensor 310 and the second temperature sensor 320 can be thermal resistor sensors, thermistor sensors, or thermocouple sensors. In this embodiment, the first temperature sensor 310 is configured to determine a temperature difference ΔT = T - T1 based on the target temperature T of the first fluid exiting the first fluid pipe 210 and the temperature T1 of the first fluid detected by the first temperature sensor 310. With the flow rate of the first fluid within the first fluid pipe 210 constant, the corresponding heating power P is determined based on the difference between the target temperature T and temperature T1, i.e., ΔT = T - T1, so that the heating film 220 (such as the heating film 220 in Figure 2) heats the first fluid flowing through the first fluid pipe 210. A second temperature sensor 320 is provided to detect the temperature T2 of the first fluid flowing out of the first fluid pipe 210 to determine whether the temperature T2 has reached the target temperature T. After the process is completed, the power to the heating film 220 is turned off. After the process is completed, if the residual temperature of the first fluid pipe 210 and the heating film 220 is too high, the gas purge line 400 shown in Figure 3 can be used to purge inert gas or nitrogen into the inner cavity of the swing arm 200 to cool the components within the swing arm 200, such as the first fluid pipe 210 and the heating film 220, thereby reducing the impact of prolonged high temperature on the life of related components. Furthermore, the purge of inert gas or nitrogen removes acid gases from the inner cavity of the swing arm 200.

[0040] In some embodiments, referring to FIG3 , the swing arm 200 of the substrate cleaning device 1 includes a housing 240, a first thermal insulation member 251, a second thermal insulation member 252, and an anti-corrosion layer 253. The inner cavity of the swing arm 200 is located inside the housing 240, and the housing 240 is made of stainless steel. The first thermal insulation member 251 is arranged on the inner periphery of the housing 240 to provide insulation and heat insulation. The material used for the first thermal insulation member 251 is, for example, mica. The second thermal insulation member 252 is arranged between the first thermal insulation member 251 and the housing 240 to further provide insulation. The first thermal insulation member 251 and the second thermal insulation member 252 are made of different insulation materials. The second thermal insulation member 252 is, for example, thermal insulation cotton. The anti-corrosion layer 253 is coated on the outer periphery of the housing 240 to prevent acid gas in the process environment from corroding the housing 240. The anti-corrosion layer 253 is a Teflon coating.

[0041] Referring to Figure 1 , substrate cleaning apparatus 1 further includes a column 260, disposed at the second end of swing arm 200, for driving swing arm 200 for elevation and rotation. Column 260 includes a pipeline passage 261 for passage of pipes or wires, such as the wires for heating film 220 and the pipe connecting first fluid pipe 210. Column 260 also serves as an outlet for inert gas from gas purge pipe 400.

[0042] As shown in Figure 1, in some embodiments, the substrate cleaning device 1 further includes a second fluid pipe 500, an exhaust duct 600 and an insulation layer 120, and the second fluid pipe 500 is used to supply the second fluid to the nozzle 100. The nozzle 100 includes a confluence portion 110, and the confluence portion 110 is respectively connected to the first fluid pipe 210 and the second fluid pipe 500, so that the first fluid and the second fluid are mixed in the confluence portion 110 and flow out of the nozzle 100. As shown in Figure 1, the insulation layer 120 is arranged on the outside of the nozzle 100 to achieve a heat preservation effect. The insulation layer 120 can be made of PTFE (Polytetrafluoroethylene) material. The confluence portion 110 is also connected to the exhaust duct 600, and the exhaust duct 600 is used to discharge bubbles generated when the first fluid and the second fluid are mixed. The second fluid can be hydrogen peroxide (H2O2). After hydrogen peroxide and ultra-high temperature sulfuric acid above 190°C are mixed in the confluence 110, the temperature will rise to a temperature higher than 190°C, for example, above 200°C, which is conducive to removing the photoresist after high-dose ion implantation and can significantly improve the photoresist removal efficiency, thereby also saving the use of the mixed solution of sulfuric acid and hydrogen peroxide (SPM solution).

[0043] Example 2:

[0044] FIG5 shows a schematic diagram of a first fluid pipe according to Example 2 of the present application; FIG6 shows a cross-sectional view of a substrate cleaning device according to Example 2 of the present application.

[0045] 5 and 6 , the differences between Example 2 and Example 1 are: 1. The first fluid pipe 210 includes a spiral tube; and 2. The first temperature sensor 310 is provided on the supply pipeline connected to the first fluid pipe 210 .

[0046] In this embodiment, by designing the first fluid pipe 210 to be spiral, compared with the straight pipe in Example 1, the spiral pipe increases the heating area of ​​the first fluid per unit volume, thereby improving the heat exchange efficiency.

[0047] 1 and 6 , the same elements or elements having the same functions are denoted by the same reference numerals, and redundant descriptions are omitted.

[0048] Example 3:

[0049] FIG7 shows a schematic diagram of the wet process equipment of Example 1 of the present application.

[0050] Referring to Figure 7, the present application proposes a wet process equipment, including a chamber 2, a substrate supporting device 3 and the above-mentioned substrate cleaning device 1. The substrate supporting device 3 is arranged inside the chamber 2 to support the substrate 1000. The nozzle 100 of the substrate cleaning device 1 is used to supply fluid to the substrate 1000. The fluid is a mixed fluid formed by mixing a first fluid and a second fluid, such as SPM solution.

[0051] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the above embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A substrate cleaning device, characterized in that: include: nozzle; A swing arm, wherein the nozzle is arranged at one end of the swing arm, and a first fluid pipe is provided in the inner cavity of the swing arm. The first fluid pipe is connected to the nozzle and is used to pass a first fluid into the nozzle. The outer surface of the tube wall of the first fluid pipe is covered with a heating film layer, and the heating film layer is used to transfer heat to the first fluid through the tube wall of the fluid pipe, so that the temperature of the first fluid reaches the target temperature.

2. The substrate cleaning device according to claim 1, wherein: The first fluid pipe includes a straight pipe.

3. The substrate cleaning device according to claim 1, wherein: The first fluid tube includes a spiral tube.

4. The substrate cleaning device according to claim 1 or 2, characterized in that: Also includes: The baffle is arranged inside the first fluid pipe and close to the inlet of the first fluid pipe, and is used to disperse the first fluid entering from the inlet.

5. The substrate cleaning device according to claim 4, wherein: The first fluid pipe has a first end wall and a second end wall opposite to each other, the inlet of the first fluid pipe is opened in the first end wall, and the outlet of the first fluid pipe is opened in the second end wall; The flow blocking member includes a connecting rod and a block, the first end of the connecting rod is arranged on the first end wall, the second end of the connecting rod extends toward the second end wall and is connected to the block, and in the extension direction of the connecting rod, the block is located directly in front of the inlet of the first fluid pipe.

6. The substrate cleaning device according to claim 1, wherein: Also includes: A gas purge pipeline is communicated with the inner cavity of the swing arm and is used for purging inert gas or nitrogen into the inner cavity of the swing arm.

7. The substrate cleaning device according to claim 1, wherein: Also includes: The first temperature sensor is used to detect the temperature of the first fluid entering the first fluid pipe.

8. The substrate cleaning device according to claim 1, wherein: Also includes: The second temperature sensor is used to detect the temperature of the first fluid flowing out of the first fluid pipe.

9. The substrate cleaning device according to claim 1, wherein: The swing arm comprises: a housing, wherein the inner cavity is located inside the housing; The first heat insulating member is arranged on the inner periphery of the shell.

10. The substrate cleaning device according to claim 9, wherein: The swing arm further comprises: The second thermal insulation member is arranged between the first thermal insulation member and the shell, and the first thermal insulation member and the second thermal insulation member are made of different thermal insulation materials.

11. The substrate cleaning device according to claim 9, wherein: The shell is made of stainless steel.

12. The substrate cleaning device according to claim 9, wherein: The swing arm further comprises: The anti-corrosion layer is coated on the outer periphery of the shell.

13. The substrate cleaning device according to claim 12, wherein: The anti-corrosion layer is a Teflon coating.

14. The substrate cleaning device according to claim 1, wherein: Also includes: The heat-insulating layer is arranged on the outside of the nozzle.

15. The substrate cleaning device according to claim 1, wherein Also includes: a second fluid pipe for supplying a second fluid to the nozzle; The nozzle includes a confluence portion, the confluence portion being connected to the first fluid pipe and the second fluid pipe, respectively, so that the first fluid and the second fluid are mixed at the confluence portion.

16. A wet process equipment, characterized in that: include: chamber; a substrate supporting device, disposed inside the chamber and configured to support the substrate; as well as The substrate cleaning device according to any one of claims 1 to 15, wherein the nozzle of the substrate cleaning device is used to supply fluid to the substrate.

Citation Information

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