High-frequency module and communication device

Abstract

Provided is a high-frequency module that reduces deterioration in the properties of a first inductor and a second inductor. This high-frequency module (1) comprises a mounting substrate (2), a first inductor incorporated into the mounting substrate (2), and a second inductor (32) disposed on the mounting substrate (2). The mounting substrate (2) includes a conductor (23) disposed between the first inductor and the second inductor (32). In a plan view from the thickness direction of the mounting substrate (2), the conductor (23) has a region (AR1) that overlaps the first inductor and the second inductor (32). The conductor (23) includes a plurality of linear parts (231) that do not come into contact with each other in the region (AR1). Each of the plurality of linear parts (231) extends in a direction (D3) intersecting the thickness direction of the mounting substrate (2).

Description

High frequency module and communication device

[0001] The present invention relates to a high-frequency module and a communication device, and more particularly to a high-frequency module including a first inductor and a second inductor, and a communication device including the high-frequency module.

[0002] Patent Document 1 discloses a mounting structure for an electromagnetic circuit, in which a mesh-like shielding layer is disposed between a wiring layer on which a core, which is a magnetic component, is mounted and a coil layer on which a plurality of flat coils are stacked.

[0003] Japanese Patent Application Publication No. 6-325949

[0004] However, in the shield layer described in Patent Document 1, the characteristics of the coil (inductor) included in the coil layer may change.

[0005] An object of the present invention is to provide a high-frequency module and a communication device that reduce changes in the characteristics of a first inductor and a second inductor.

[0006] A high-frequency module according to one aspect of the present invention includes a mounting substrate, a first inductor, and a second inductor. The first inductor is built into the mounting substrate. The second inductor is disposed on the mounting substrate. The mounting substrate includes a conductor. The conductor is disposed between the first inductor and the second inductor. In a plan view from the thickness direction of the mounting substrate, the conductor has an area overlapping with the first inductor and the second inductor. The conductor includes a plurality of linear portions that do not contact each other in the area. Each of the plurality of linear portions extends in a direction intersecting the thickness direction of the mounting substrate.

[0007] A communication device according to one aspect of the present invention includes the high-frequency module and a signal processing circuit connected to the high-frequency module.

[0008] According to the high-frequency module and communication device according to the above aspects, it is possible to reduce changes in the characteristics of the first inductor and the second inductor.

[0009] FIG. 1 is a plan view of a main portion of a high-frequency module according to a first embodiment. FIG. 2 is a cross-sectional view of a main portion of the high-frequency module taken along the line X1-X1 in FIG. 1 . FIG. 3 is a circuit diagram of a communication device including the high-frequency module according to the first embodiment. FIG. 4 is a cross-sectional view of a main portion of a high-frequency module according to a first modification of the first embodiment. FIG. 5 is a cross-sectional view of a main portion of a high-frequency module according to a second embodiment. FIG. 6 is a cross-sectional view of a main portion of a high-frequency module according to a first modification of the second embodiment. FIG. 7 is a plan view of a conductor of a high-frequency module according to a third embodiment. FIG. 8 is a cross-sectional view of a main portion of the high-frequency module according to the third embodiment. FIG. 9 is a plan view of a conductor of a high-frequency module according to a fourth embodiment. FIG. 10 is a cross-sectional view of a main portion of a high-frequency module according to a fifth embodiment. FIG. 11 is a circuit diagram of a low-noise amplifier of a high-frequency module according to a second modification of the first embodiment. FIG. 12 is a circuit diagram of a power amplifier of a high-frequency module according to a first modification of the fifth embodiment.

[0010] Hereinafter, high-frequency modules and communication devices according to embodiments will be described with reference to the drawings. The drawings referred to in the following embodiments are all schematic diagrams, and the ratios of the sizes and thicknesses of the components in the drawings do not necessarily reflect the actual dimensional ratios.

[0011] (Embodiment 1) (1) High-Frequency Module As shown in FIG. 3 , the high-frequency module 1 (see FIGS. 1 and 2 ) is used in, for example, a communication device 100. The communication device 100 is, for example, a mobile phone such as a smartphone. Note that the communication device 100 is not limited to a mobile phone and may be, for example, a wearable device such as a smartwatch. The high-frequency module 1 is a high-frequency module that is compatible with, for example, 4G (fourth generation mobile communication) standards, 5G (fifth generation mobile communication) standards, etc. The 4G standard is, for example, 3GPP (Third Generation Partnership Project, registered trademark) and LTE (Long Term Evolution, registered trademark) standards. The 5G standard is, for example, 5G NR (New Radio). The high-frequency module 1 is compatible with, for example, carrier aggregation and dual connectivity.

[0012] (2) Circuit Configuration of High-Frequency Module The circuit configuration of the high-frequency module 1 according to the first embodiment will be described below with reference to FIG.

[0013] 3 , the radio-frequency module 1 according to the first embodiment includes a plurality of external connection terminals 10, a matching circuit 181, and a switch 110. The radio-frequency module 1 further includes a matching circuit 121, a transmission filter 131, a matching circuit 141, a power amplifier 151, and a matching circuit 161. The radio-frequency module 1 further includes a matching circuit 122, a reception filter 132, a matching circuit 142, a low-noise amplifier 152, and a filter 162. The plurality of external connection terminals 10 include an antenna terminal 11, a signal input terminal 12, and a signal output terminal 13.

[0014] (2.1) Power Amplifier The power amplifier 151 is an amplifier that amplifies a transmission signal. The power amplifier 151 has an input terminal (not shown) and an output terminal (not shown). The input terminal of the power amplifier 151 is connected to the signal processing circuit 17 via a matching circuit 161 and a signal input terminal 12. The output terminal of the power amplifier 151 is connected to the transmission filter 131 via a matching circuit 141.

[0015] (2.2) Transmit Filter The transmit filter 131 is a filter that passes a transmit signal. The transmit filter 131 is, for example, an acoustic wave filter including multiple series arm resonators and multiple parallel arm resonators. The acoustic wave filter is, for example, a SAW (Surface Acoustic Wave) filter that uses surface acoustic waves. The transmit filter 131 has an input terminal (not shown) and an output terminal (not shown). The input terminal of the transmit filter 131 is connected to the output terminal of the power amplifier 151 via a matching circuit 141. The output terminal of the transmit filter 131 is connected to the switch 110 via a matching circuit 121.

[0016] (2.3) Low-Noise Amplifier The low-noise amplifier 152 is an amplifier that amplifies the received signal. The low-noise amplifier 152 has an input terminal (not shown) and an output terminal (not shown). The input terminal of the low-noise amplifier 152 is connected to the receive filter 132 via the matching circuit 142. The output terminal of the low-noise amplifier 152 is connected to the signal processing circuit 17 via the filter 162 and the signal output terminal 13.

[0017] (2.4) Receiving Filter The receiving filter 132 is a filter that passes the received signal. The receiving filter 132 is, for example, an acoustic wave filter including multiple series arm resonators and multiple parallel arm resonators. The acoustic wave filter is, for example, a SAW filter that uses surface acoustic waves. The receiving filter 132 has an input terminal (not shown) and an output terminal (not shown). The input terminal of the receiving filter 132 is connected to the switch 110 via the matching circuit 122. The output terminal of the receiving filter 132 is connected to the input terminal of the low-noise amplifier 152 via the matching circuit 142.

[0018] (2.5) Switch The switch 110 switches between the transmit filter 131 and the receive filter 132 to be connected to the antenna terminal 11. The switch 110 has a common terminal 111 and a plurality of (two in the illustrated example) selection terminals 112 and 113. The common terminal 111 is connected to the antenna terminal 11. The selection terminal 112 is connected to the transmit filter 131 via a matching circuit 121. The selection terminal 113 is connected to the receive filter 132 via a matching circuit 122.

[0019] (2.6) Matching Circuit and Filter The matching circuit 121 is a circuit for achieving impedance matching between the output terminal of the transmit filter 131 and the selection terminal 112 of the switch 110. The matching circuit 121 includes one or more inductors.

[0020] The matching circuit 122 is a circuit for achieving impedance matching between the selection terminal 113 of the switch 110 and the input terminal of the receive filter 132. The matching circuit 122 includes one or more inductors.

[0021] The matching circuit 141 is a circuit for achieving impedance matching between the output terminal of the power amplifier 151 and the input terminal of the transmit filter 131. The matching circuit 141 includes one or more inductors.

[0022] The matching circuit 142 is a circuit for achieving impedance matching between the output terminal of the receive filter 132 and the input terminal of the low-noise amplifier 152. The matching circuit 142 includes one or more inductors.

[0023] The matching circuit 161 is a circuit for achieving impedance matching between the signal input terminal 12 and the input terminal of the power amplifier 151. The matching circuit 161 includes one or more inductors.

[0024] The filter 162 reduces noise in the amplified received signal output from the output terminal of the low-noise amplifier 152. The filter 162 includes, for example, an inductor and a capacitor. More specifically, the inductor is connected between the output terminal of the low-noise amplifier 152 and the signal output terminal 13, and the capacitor is connected between the output terminal of the low-noise amplifier 152 and the ground electrode. Alternatively, the capacitor may be connected between the output terminal of the low-noise amplifier 152 and the signal output terminal 13, and the inductor may be connected between the output terminal of the low-noise amplifier 152 and the ground electrode.

[0025] The matching circuit 181 is a circuit for achieving impedance matching between the antenna terminal 11 and the common terminal 111 of the switch 110. The matching circuit 181 includes, for example, an inductor connected between the common terminal 111 of the switch 110 and a ground electrode.

[0026] (3) Structure of the High-Frequency Module The structure of the high-frequency module 1 according to the first embodiment will be described below with reference to the drawings.

[0027] 1 and 2 , the high-frequency module 1 according to the first embodiment includes a mounting substrate 2, a first inductor 31, a second inductor 32, and an electronic component 41. The mounting substrate 2 includes a conductor 23.

[0028] (3.1) Mounting Substrate As shown in Figures 1 and 2, the mounting substrate 2 has a first main surface 21 and a second main surface 22 (not shown in Figure 1). The first main surface 21 and the second main surface 22 face each other in a direction D1. The direction D1 corresponds to the first direction in this disclosure.

[0029] A second inductor 32 is disposed on the first main surface 21 of the mounting substrate 2 .

[0030] 2, electronic components 41 are arranged on the second main surface 22 of the mounting substrate 2. In addition, a plurality of external connection terminals 10 (not shown in FIG. 2) are arranged on the second main surface 22 of the mounting substrate 2.

[0031] The mounting substrate 2 incorporates a first inductor 31. "The mounting substrate 2 incorporates the first inductor 31" means that the first inductor 31 is disposed between the first main surface 21 and the second main surface 22 of the mounting substrate 2.

[0032] The mounting substrate 2 is, for example, a multilayer substrate including multiple dielectric layers and multiple conductive layers. The multiple dielectric layers and multiple conductive layers are stacked in direction D1. The multiple conductive layers are formed in a predetermined pattern defined for each layer. Each of the multiple conductive layers includes one or multiple conductor portions in a plane perpendicular to direction D1. Each conductive layer is made of, for example, copper. The multiple conductive layers include a ground electrode to which a ground potential is applied. In the high-frequency module 1, multiple ground terminals and the ground electrode are electrically connected via via conductors or the like in the mounting substrate 2. The mounting substrate 2 is, for example, a low-temperature co-fired ceramics (LTCC) substrate. The mounting substrate 2 is not limited to an LTCC substrate, and may be, for example, a resin multilayer substrate, a printed wiring board, or a high-temperature co-fired ceramics (HTCC) substrate.

[0033] (3.1.1) Conductor The mounting substrate 2 includes a conductor 23. As shown in FIG. 2 , the conductor 23 is disposed between the first inductor 31 and the second inductor 32 in the direction D1.

[0034] The conductor 23 includes a plurality of linear portions 231. The linear portions 231 are aligned in a direction perpendicular to the direction D1. More specifically, the linear portions 231 are aligned in a direction D2 perpendicular to the direction D1. Each of the linear portions 231 extends in a direction perpendicular to the direction D1. More specifically, each of the linear portions 231 extends in a direction D3 perpendicular to the direction D1. Here, the directions D2 and D3 intersect. More specifically, the directions D2 and D3 are perpendicular to each other. The direction D2 corresponds to the second direction in the present disclosure. The direction D3 corresponds to the third direction in the present disclosure. For example, when viewed in a plan view from the direction D1, each of the linear portions 231 has a rectangular shape with the direction D3 as the longitudinal direction and a width d1 in the direction D2. Each of the linear portions 231 is a conductor. The material of each of the plurality of linear portions 231 is, for example, copper.

[0035] As shown in FIG. 1 , the conductor 23 has a region AR1 that overlaps with the first inductor 31 and the second inductor 32 in a plan view from the direction D1. More specifically, the region AR1 includes a region where the first inductor 31 and the conductor 23 overlap, and a region where the second inductor 32 and the conductor 23 overlap in a plan view from the direction D1. In the region AR1, the multiple linear portions 231 do not contact each other. Here, "the multiple linear portions 231 do not contact each other in the region AR1" means not only that the multiple linear portions 231 do not contact each other in the region AR1, but also that no conductive member for conducting the two linear portions 231 is located in the region AR1. The conductor 23 also has a region AR2. The region AR2 is a region of the conductor 23 other than the region AR1, and does not overlap with either the first inductor 31 or the second inductor 32 in a plan view from the direction D1.

[0036] The length of each of the linear portions 231 in the direction D3, which is the extension direction, is equal to or greater than the length d2 of the region AR1 in the third direction, which is also the extension direction. This allows both ends of each of the linear portions 231 to be region AR2. Therefore, the conductor 23 can reduce the passage of magnetic flux in the direction D1.

[0037] Because the conductor 23 is a conductor disposed between the first inductor 31 and the second inductor 32 in the direction D1, the conductor 23 can reduce electromagnetic coupling between the first inductor 31 and the second inductor 32. Furthermore, in the conductor 23, the multiple linear portions 231 do not contact each other in the region AR1. Therefore, in the region AR1, a closed circuit that goes around an axis parallel to the direction D1 is limited to a path that is completed within one linear portion 231. Therefore, even if the magnetic flux generated by the first inductor 31 or the second inductor 32 passes through the conductor 23 along the direction D1, eddy currents are unlikely to be generated in the region AR1 of the conductor 23. In other words, it is possible to reduce electromagnetic coupling between the first inductor 31 and the conductor 23 and between the second inductor 32 and the conductor 23. Therefore, the inductance and Q value of each of the first inductor 31 and the second inductor 32 are less dependent on the distance between the first inductor 31 and the conductor 23 and the distance between the conductor 23 and the second inductor 32. In other words, even if the distance between the first inductor 31 and the second inductor 32 is shortened to reduce the size of the high-frequency module 1, it is possible to reduce degradation in the characteristics of the high-frequency module 1.

[0038] (3.2) Inductor The first inductor 31 is built into the mounting substrate 2. The first inductor 31 includes, for example, a plurality of conductors that are L-shaped or C-shaped when viewed from a plane in the direction D1. The plurality of conductors are, for example, aligned in the direction D1 and connected to each other so as to form a spiral path.

[0039] The first inductor 31 is included in, for example, the filter 162 (see FIG. 3 ). That is, the first inductor 31 is connected to the output terminal of the low-noise amplifier 152.

[0040] The second inductor 32 is disposed on the first main surface 21 of the mounting substrate 2. The second inductor 32 is, for example, a chip inductor that is a surface-mounted element.

[0041] The second inductor 32 is included in, for example, the matching circuit 142 (see FIG. 3 ). That is, the second inductor 32 is connected to the input terminal of the low-noise amplifier 152. That is, the low-noise amplifier 152 is connected between the first inductor 31 and the second inductor 32.

[0042] The first inductor 31 and the second inductor 32 overlap in a plan view from the direction D1. Here, "the first inductor 31 and the second inductor 32 overlap in a plan view from the direction D1" means that at least a portion of the first inductor 31 and at least a portion of the second inductor 32 overlap in a plan view from the direction D1. That is, a portion of the first inductor 31 and a portion of the second inductor 32 overlap in a plan view from the direction D1. Alternatively, a portion of the first inductor 31 and the entire second inductor 32 overlap in a plan view from the direction D1. Alternatively, the entire first inductor 31 and a portion of the second inductor 32 overlap in a plan view from the direction D1. Alternatively, the entire first inductor 31 and a portion of the second inductor 32 overlap in a plan view from the direction D1. Alternatively, the entire first inductor 31 and the entire second inductor 32 overlap in a plan view from the direction D1.

[0043] As described above, in the high-frequency module 1, electromagnetic coupling between the first inductor 31 and the second inductor 32 is reduced. Therefore, isolation between the path connected to the input terminal of the low-noise amplifier 152 and the path connected to the output terminal of the low-noise amplifier 152 is improved. This reduces degradation of the characteristics of the high-frequency module 1. Furthermore, because the inductance and Q value of the first inductor 31 and the second inductor 32 are less likely to vary depending on the distance between the first inductor 31 and the second inductor 32, the high-frequency module 1 can be miniaturized. Furthermore, because the first inductor 31 built into the mounting substrate 2 is connected to the low-noise amplifier 152, the wiring length between the first inductor 31 and the electronic component 41 can be shortened. Therefore, the noise resistance of the high-frequency module 1 is improved, and the high-frequency module 1 can be miniaturized.

[0044] (3.3) Electronic Component The electronic component 41 is disposed on the second main surface 22 of the mounting substrate 2. The electronic component 41 is, for example, an IC chip including a low-noise amplifier 152. The electronic component 41 is, for example, flip-chip mounted on the second main surface 22 of the mounting substrate 2.

[0045] The electronic component 41 is arranged, for example, so as to overlap the first inductor 31 in a plan view from the direction D1. This makes it possible to shorten the wiring length between the low-noise amplifier 152 and the first inductor 31.

[0046] (3.4) External Connection Terminals The plurality of external connection terminals 10 are terminals for electrically connecting the mounting substrate 2 to an external substrate.

[0047] The plurality of external connection terminals 10 are arranged on the second main surface 22 of the mounting substrate 2. "The external connection terminals 10 are arranged on the second main surface 22 of the mounting substrate 2" means that the external connection terminals 10 are mechanically connected to the second main surface 22 of the mounting substrate 2 and that the external connection terminals 10 are electrically connected to (appropriate conductor portions of) the mounting substrate 2. The material of the plurality of external connection terminals 10 is, for example, a metal (for example, copper, a copper alloy, etc.). Each of the plurality of external connection terminals 10 is, for example, a columnar electrode. The columnar electrode is joined to the conductor portion of the mounting substrate 2 by, for example, solder, but is not limited to this. For example, the columnar electrode may be joined using a conductive adhesive (for example, a conductive paste) or may be joined directly.

[0048] (4) Communication Device As shown in FIG. 3 , the communication device 100 includes the high-frequency module 1, a signal processing circuit 17, and an antenna 16.

[0049] The antenna 16 is connected to the antenna terminal 11 of the high-frequency module 1. The antenna 16 has a transmitting function of emitting a transmission signal output from the high-frequency module 1 as radio waves, and a receiving function of receiving a reception signal from outside as radio waves and outputting it to the high-frequency module 1.

[0050] The signal processing circuit 17 includes an RF signal processing circuit 171 and a baseband signal processing circuit 172. The signal processing circuit 17 processes signals passing through the high-frequency module 1. More specifically, the signal processing circuit 17 processes transmission signals and reception signals.

[0051] The RF signal processing circuit 171 is, for example, an RFIC (Radio Frequency Integrated Circuit), and performs signal processing on high frequency signals.

[0052] The RF signal processing circuit 171 performs signal processing such as up-conversion and amplification on the transmission signal transmitted from the baseband signal processing circuit 172, and outputs the processed transmission signal to the high-frequency module 1. The RF signal processing circuit 171 also performs signal processing such as amplification and down-conversion on the reception signal output from the high-frequency module 1, and outputs the processed reception signal to the baseband signal processing circuit 172.

[0053] The baseband signal processing circuit 172 is, for example, a baseband integrated circuit (BBIC). The baseband signal processing circuit 172 performs predetermined signal processing on a transmission signal from outside the signal processing circuit 17. The received signal processed by the baseband signal processing circuit 172 is used, for example, as an image signal for image display or as an audio signal for telephone calls.

[0054] The RF signal processing circuit 171 also functions as a control unit that controls the connection of the switch 110 of the high-frequency module 1 based on the transmission and reception of high-frequency signals (transmission signal, reception signal). Specifically, the RF signal processing circuit 171 switches the connection of the switch 110 of the high-frequency module 1 using a control signal (not shown). The control unit may be provided outside the RF signal processing circuit 171, and may be provided in the high-frequency module 1 or the baseband signal processing circuit 172, for example.

[0055] (5) Effects The high-frequency module 1 according to the first embodiment includes a mounting substrate 2, a first inductor 31 built into the mounting substrate 2, and a second inductor 32 disposed on the mounting substrate 2. The mounting substrate 2 includes a conductor 23 disposed between the first inductor 31 and the second inductor 32. In a plan view of the mounting substrate 2 in the thickness direction D1, the conductor 23 has an area AR1 that overlaps with the first inductor 31 and the second inductor 32. The conductor 23 includes a plurality of linear portions 231 that do not contact each other in the area AR1. Each of the linear portions 231 extends in a direction D3 that intersects with the thickness direction D1 of the mounting substrate 2. This enables the high-frequency module 1 according to the first embodiment to reduce changes in the characteristics of the high-frequency module 1.

[0056] Furthermore, in the high-frequency module 1 according to the first embodiment, the mounting substrate 2 has a first main surface 21. The second inductor 32 is disposed on the first main surface 21 of the mounting substrate 2. This makes it easy to use a large inductor as the second inductor 32 in the high-frequency module 1. Therefore, it becomes easy to use an inductor with a large inductance or Q value as the second inductor 32.

[0057] Furthermore, in the high-frequency module 1 according to the first embodiment, the multiple linear portions 231 are aligned in a direction D2 perpendicular to the direction D1, which is the thickness direction of the mounting substrate 2. Each of the multiple linear portions 231 extends in a direction D3 perpendicular to the directions D1 and D2. As a result, the conductor 23 is not continuous in the direction D2 in the region AR1, making it difficult to form a closed circuit that goes around an axis parallel to the direction D1. This makes it possible to easily reduce electromagnetic coupling between the first inductor 31 and the second inductor 32 in the high-frequency module 1 and to reduce changes in the characteristics of the high-frequency module 1.

[0058] The high-frequency module 1 according to the first embodiment also includes a low-noise amplifier 152. The low-noise amplifier 152 is connected between the first inductor 31 and the second inductor 32. This improves isolation between the path connected to the input terminal of the low-noise amplifier 152 and the path connected to the output terminal of the low-noise amplifier 152. This makes it possible to reduce degradation in the characteristics of the high-frequency module 1.

[0059] Furthermore, in the high-frequency module 1 according to the first embodiment, the first inductor 31 is connected to the output terminal of the low-noise amplifier 152. The second inductor 32 is connected to the input terminal of the low-noise amplifier 152. This makes it possible to shorten the wiring length between the low-noise amplifier 152 and the first inductor 31, making it easier to improve the noise resistance of the high-frequency module 1.

[0060] Furthermore, in the high-frequency module 1 according to the first embodiment, the mounting substrate 2 has a second main surface 22. The low-noise amplifier 152 is disposed on the second main surface 22 of the mounting substrate 2. This makes it easy to arrange the low-noise amplifier 152 and the first inductor 31 so that they overlap in a plan view from the direction D1. This makes it possible to further shorten the wiring length between the low-noise amplifier 152 and the first inductor 31, making it easy to improve the noise resistance of the high-frequency module 1.

[0061] In the high-frequency module 1 according to the first embodiment, the length of each of the linear portions 231 in the direction D3, which is the extension direction, is equal to or greater than the length d2 of the region AR1 in the direction D3, which is the extension direction, thereby enabling the conductor 23 to reduce the passage of magnetic flux along the direction D1.

[0062] The communication device 100 according to the first embodiment includes a high-frequency module 1 and a signal processing circuit 17 connected to the high-frequency module 1. This allows the communication device 100 to reduce changes in the characteristics of the first inductor and the second inductor in the high-frequency module 1.

[0063] (Modification 1) As shown in Fig. 4, the high-frequency module 1 according to Modification 1 of Embodiment 1 includes an inductor 33 in addition to the configuration of the high-frequency module 1 according to Embodiment 1. Furthermore, as shown in Fig. 4, the high-frequency module 1 according to Modification 1 includes a plurality of conductors 23.

[0064] 4, the inductor 33 is disposed on the second main surface 22 of the mounting substrate 2. The inductor 33 is, for example, an inductor serving as a surface-mounted element.

[0065] 4, the plurality of conductors 23 include conductor 23a and conductor 23b. In the direction D1, conductor 23a is disposed between the first inductor 31 and the second inductor 32. In addition, in the direction D1, conductor 23b is disposed between the first inductor 31 and the inductor 33.

[0066] Each of the conductors 23a and 23b includes a plurality of linear portions 231. The linear portions 231 are aligned in a direction D2 perpendicular to the direction D1. Each of the linear portions 231 extends in a direction D3 perpendicular to the direction D1. For example, when viewed in a plan view from the direction D1, each of the linear portions 231 has a rectangular shape with the longitudinal direction being the direction D3.

[0067] In a plan view from the direction D1, the conductor 23a has an area AR1 that overlaps with the first inductor 31 and the second inductor 32. In the conductor 23a, the multiple linear portions 231 do not contact each other in the area AR1.

[0068] The conductor 23b has an area AR1 that overlaps with the first inductor 31 and the inductor 33 in a plan view from the direction D1. In the conductor 23b, the multiple linear portions 231 do not contact each other in the area AR1.

[0069] Therefore, the high-frequency module 1 according to the first modification of the first embodiment can reduce changes in the characteristics of the first inductor 31 and the second inductor 32. Furthermore, the high-frequency module 1 according to the first modification can reduce changes in the characteristics of the first inductor 31 and the inductor 33. Therefore, it is possible to further reduce changes in the characteristics of the first inductor 31.

[0070] (Modification 2) (1) Configuration In the high-frequency module 1 according to Modification 2 of Embodiment 1, the first inductor 31 is built into the mounting substrate 2, similar to the high-frequency module 1 according to Embodiment 1. On the other hand, in the high-frequency module 1 according to Modification 2 of Embodiment 1, the first inductor 31 is not included in the filter 162.

[0071] The electronic component 41 includes, for example, a field effect transistor (FET) Q1 as an amplifying element included in the low-noise amplifier 152 (see FIG. 3 ), as shown in FIG. 11 . More specifically, a gate electrode G1 of the transistor Q1 is connected to an input terminal of the low-noise amplifier 152. A drain electrode DR1 of the transistor Q1 is connected to a bias supply circuit B1 and an output terminal of the low-noise amplifier 152. A source electrode S1 of the transistor Q1 is connected to a ground electrode.

[0072] The first inductor 31 is, for example, an inductor L1 connected between the source electrode S1 of the transistor Q1 and the ground electrode. That is, the transistor Q1 and the second inductor 32 are connected in series between the power supply and the ground. In the high-frequency module 1 according to the second modification of the first embodiment, isolation between the path connected to the gate electrode G1 of the transistor Q1 of the low-noise amplifier 152 and the path connected to the source electrode S1 of the transistor Q1 of the low-noise amplifier 152 is improved.

[0073] Furthermore, the first inductor 31 may be, for example, an inductor L2 connected between the drain electrode DR1 of the transistor Q1 and the bias supply circuit B1. That is, the transistor Q1 and the second inductor 32 are connected in series between the power supply and ground. Even in this case, isolation between the path connected to the gate electrode G1 of the transistor Q1 of the low-noise amplifier 152 and the path connected to the drain electrode DR1 of the transistor Q1 of the low-noise amplifier 152 is improved.

[0074] (2) Effects The high-frequency module 1 according to the second modification of the first embodiment includes a low-noise amplifier 152 and a matching circuit 142. The low-noise amplifier 152 includes a transistor Q1 and a first inductor 31. The matching circuit 142 is connected to the input terminal of the low-noise amplifier 152. The transistor Q1 and the first inductor 31 are connected in series between the power supply and ground. The matching circuit 142 includes the second inductor 32. As a result, the high-frequency module 1 according to the second modification of the first embodiment can reduce signal degradation in the low-noise amplifier 152.

[0075] (Variation 3) (1) Configuration In the high-frequency module 1 according to Variation 3 of Embodiment 1, the first inductor 31 is built into the mounting substrate 2, similar to the high-frequency module 1 according to Embodiment 1. On the other hand, in the high-frequency module 1 according to Variation 3 of Embodiment 1, the first inductor 31 is not included in the filter 162.

[0076] The first inductor 31 is included in, for example, the matching circuit 181 (see FIG. 3 ). That is, the switch 110 is connected between the first inductor 31 and the second inductor 32. The first inductor 31 is an inductor connected between, for example, the antenna terminal 11 and a ground electrode.

[0077] In the high-frequency module 1 according to the third modification of the first embodiment, the isolation between the matching circuit 181 and the matching circuit 142 (see FIG. 3 ) is improved. That is, in the high-frequency module 1 according to the third modification of the first embodiment, the thickness of the mounting substrate 2 can be reduced compared to a configuration that does not include the conductor 23, and the high-frequency module 1 can be made smaller.

[0078] (2) Effects The high-frequency module 1 according to the third modification of the first embodiment includes a switch 110 connected to the antenna terminal 11. The switch 110 is connected between the first inductor 31 and the second inductor 32. This makes it possible for the high-frequency module 1 according to the third modification of the first embodiment to improve isolation between the two paths connected to the switch 110. Therefore, the high-frequency module 1 according to the third modification can reduce changes in the characteristics of the first inductor 31 and the second inductor 32.

[0079] (Embodiment 2) (1) Configuration A high-frequency module 1a according to embodiment 2 includes a second inductor 32a instead of the second inductor 32 in the configuration of the high-frequency module 1 according to embodiment 1. The second inductor 32a is an inner-layer inductor, as shown in FIG.

[0080] 5, the second inductor 32a is built into the mounting substrate 2. The second inductor 32a includes, for example, a plurality of conductors that are L-shaped or C-shaped when viewed from a plane in the direction D1. The plurality of conductors are, for example, aligned in the direction D1 and connected to each other to form a spiral path.

[0081] The first inductor 31 and the second inductor 32a overlap in a plan view from the direction D1. Here, "the first inductor 31 and the second inductor 32a overlap in a plan view from the direction D1" means that at least a portion of the first inductor 31 and at least a portion of the second inductor 32a overlap in a plan view from the direction D1. That is, a portion of the first inductor 31 and a portion of the second inductor 32a overlap in a plan view from the direction D1. Alternatively, a portion of the first inductor 31 and the entire second inductor 32a overlap in a plan view from the direction D1. Alternatively, the entire first inductor 31 and a portion of the second inductor 32a overlap in a plan view from the direction D1. Alternatively, the entire first inductor 31 and a portion of the second inductor 32a overlap in a plan view from the direction D1. Alternatively, the entire first inductor 31 and the entire second inductor 32a overlap in a plan view from the direction D1.

[0082] The conductor 23 is disposed between the first inductor 31 and the second inductor 32 a. More specifically, in the direction D1, the conductor 23 is disposed between the first inductor 31 and the second inductor 32 a.

[0083] The conductor 23 includes a plurality of linear portions 231. The linear portions 231 are aligned in a direction D2 perpendicular to the direction D1. Each of the linear portions 231 extends in a direction D3 perpendicular to the direction D1.

[0084] The conductor 23 has an area AR1 that overlaps with the first inductor 31 and the second inductor 32a in a plan view from the direction D1. In the area AR1, the linear portions 231 do not contact each other.

[0085] The conductor 23 can reduce electromagnetic coupling between the first inductor 31 and the second inductor 32a. Furthermore, even if the magnetic flux generated by the first inductor 31 or the second inductor 32a passes through the conductor 23 along the direction D1, eddy currents are unlikely to be generated in the conductor 23. That is, it is possible to reduce electromagnetic coupling between the first inductor 31 and the conductor 23 or between the second inductor 32a and the conductor 23. Therefore, in the high-frequency module 1a according to the second embodiment, the inductance and Q value of each of the first inductor 31 and the second inductor 32a are unlikely to change depending on the distance between the first inductor 31 and the second inductor 32a. Therefore, even if the high-frequency module 1a is miniaturized, the impact on the characteristics of the high-frequency module 1a is small.

[0086] In the high-frequency module 1a according to the second embodiment, the first inductor 31 and the second inductor 32a overlap in a plan view from the direction D1. Therefore, when the first inductor 31 and the second inductor 32a are connected to the same circuit, for example, the low-noise amplifier 152, the wiring length can be shortened. Furthermore, compared to when the conductor 23 is not present, shortening the distance between the first inductor 31 and the second inductor 32a in the direction D1 does not affect the characteristics of the high-frequency module 1a as much. Therefore, the thickness of the mounting substrate 2 can be reduced, enabling the high-frequency module 1a to be miniaturized.

[0087] (2) Effects In the high-frequency module 1a according to the second embodiment, the second inductor 32a is built into the mounting substrate 2. Therefore, when a large inductor is not required as the second inductor 32a, the high-frequency module 1a can be miniaturized by building the second inductor 32a into the substrate.

[0088] (Modification 1) (1) Configuration The high-frequency module 1b according to Modification 1 of Embodiment 2 includes, in addition to the components of the high-frequency module 1a according to Modification 1 of Embodiment 2, a third inductor 34 and an inductor 35, as shown in Fig. 6. Furthermore, the high-frequency module 1b according to Embodiment 2 includes a plurality of conductors 23 and a plurality of conductors 24, as shown in Fig. 6.

[0089] 6, each of the third inductor 34 and the inductor 35 is built into the mounting substrate 2. Each of the third inductor 34 and the inductor 35 includes, for example, a plurality of conductors that are L-shaped or C-shaped when viewed from a plane in the direction D1. The plurality of conductors are, for example, aligned in the direction D1 and connected to each other to form a spiral path.

[0090] In a plan view from the direction D1, the third inductor 34 and the inductor 35 overlap. Here, "in a plan view from the direction D1, the third inductor 34 and the inductor 35 overlap" means that in a plan view from the direction D1, at least a portion of the third inductor 34 and at least a portion of the inductor 35 overlap. That is, in a plan view from the direction D1, a portion of the third inductor 34 and a portion of the inductor 35 overlap. Alternatively, in a plan view from the direction D1, a portion of the third inductor 34 and the entire inductor 35 overlap. Alternatively, in a plan view from the direction D1, the entire third inductor 34 and a portion of the inductor 35 overlap. Alternatively, in a plan view from the direction D1, the entire third inductor 34 and a portion of the inductor 35 overlap. Alternatively, in a plan view from the direction D1, the entire third inductor 34 and the entire inductor 35 overlap.

[0091] The first inductor 31 and the third inductor 34 are aligned in a direction D2 that intersects with the direction D1. Similarly, the second inductor 32a and the inductor 35 are aligned in the direction D2.

[0092] 6, the multiple conductors 23 include conductor 23c and conductor 23d. In direction D1, conductor 23c is disposed between first inductor 31 and second inductor 32a. Conductor 23c corresponds to the first conductor of the present disclosure. Also, in direction D1, conductor 23d is disposed between third inductor 34 and inductor 35. Conductor 23c and conductor 23d are aligned in direction D2.

[0093] Each of the conductors 23a and 23b includes a plurality of linear portions 231. The linear portions 231 are aligned in a direction D2 perpendicular to the direction D1. Each of the linear portions 231 extends in a direction D3 perpendicular to the direction D1. For example, when viewed in a plan view from the direction D1, each of the linear portions 231 has a rectangular shape with the longitudinal direction being the direction D3.

[0094] The conductor 23a has an area AR1 that overlaps with the first inductor 31 and the second inductor 32a in a plan view from the direction D1. In the conductor 23a, the linear portions 231 do not contact each other in the area AR1.

[0095] The conductor 23b has an area AR1 that overlaps with the first inductor 31 and the inductor 33 in a plan view from the direction D1. In the conductor 23b, the multiple linear portions 231 do not contact each other in the area AR1.

[0096] The conductor 24 is disposed between the first inductor 31 and the third inductor 34. More specifically, the conductor 24 is disposed between the first inductor 31 and the third inductor 34 in a plan view from the direction D1. The conductor 24 corresponds to the second conductor of the present disclosure.

[0097] The conductor 24 includes a plurality of linear portions 241. The linear portions 241 correspond to the second linear portions of the present disclosure. The linear portions 241 are aligned in a direction D1 perpendicular to the direction D2. Each of the linear portions 231 extends in a direction D3 perpendicular to the direction D2. When viewed from the direction D2, the linear portions 241 are, for example, rectangular in shape with the longitudinal direction aligned with the direction D3.

[0098] The conductor 24 has a region AR3 that overlaps with the first inductor 31 and the third inductor 34 when viewed in a plan view from the direction D2. The conductor 24 also has a region AR3 that overlaps with the second inductor 32a and the inductor 35 when viewed in a plan view from the direction D2. The region AR3 corresponds to the second region of the present disclosure. In the region AR3, the multiple linear portions 241 do not contact each other. Here, "the multiple linear portions 241 do not contact each other in the region AR3" means not only that the multiple linear portions 241 do not contact each other in the region AR3, but also that no conductive member that conducts electricity between the two linear portions 241 is disposed in the region AR3.

[0099] Because the conductor 24 is a conductor disposed between the first inductor 31 and the third inductor 34 in the direction D2, the conductor 24 can reduce the electromagnetic coupling between the first inductor 31 and the third inductor 34. Furthermore, in the conductor 24, in the region AR3, the closed circuit that goes around an axis parallel to the direction D2 is limited to a path that is completed within one linear portion 241. Therefore, even if the magnetic flux generated by the first inductor 31 or the third inductor 34 passes through the conductor 23 along the direction D2, eddy currents are unlikely to be generated in the region AR3 of the conductor 24. That is, it is possible to reduce the electromagnetic coupling between the first inductor 31 and the conductor 24, or between the third inductor 34 and the conductor 24. Therefore, the inductance and Q value of each of the first inductor 31 and the third inductor 34 are less likely to depend on the distance between the first inductor 31 and the conductor 24 and the distance between the conductor 24 and the third inductor 34. That is, even if the distance between the first inductor 31 and the third inductor 34 is shortened to reduce the size of the high-frequency module 1b, it is possible to reduce the deterioration of the characteristics of the high-frequency module 1b.

[0100] (2) Effects The high-frequency module 1b according to the first modification of the second embodiment includes a third inductor 34 built into the mounting substrate 2 and a conductor 24 different from the conductor 23. The direction D2 in which the first inductor 31 and the third inductor 34 are aligned intersects the thickness direction D1 of the mounting substrate 2. In a plan view from the thickness direction D1 of the mounting substrate 2, the conductor 24 is disposed between the first inductor 31 and the third inductor 34. In a plan view from the direction D2 in which the first inductor 31 and the third inductor 34 are aligned, the conductor 24 has a region AR3 different from the region AR1 that overlaps with the first inductor 31 and the third inductor 34. The conductor 24 includes a plurality of linear portions 241 different from the plurality of linear portions 231 and that do not contact each other in the region AR3. Each of the linear portions 241 extends in a direction D3 that intersects the direction D2 in which the first inductor 31 and the third inductor 34 are aligned. As a result, in the high-frequency module 1b according to the first modification of the second embodiment, it is possible to reduce changes in the characteristics of the first inductor 31 and the third inductor 34.

[0101] Third Embodiment (1) Configuration A high-frequency module 1c according to the third embodiment has the same configuration as the high-frequency module 1 according to the first embodiment, except that the mounting substrate 2 includes a plurality of via conductors V1 as shown in Fig. 7 and Fig. 8. Each of the plurality of via conductors V1 extends along the direction D1 as shown in Fig. 8. Each of the plurality of linear portions 231 included in the conductor 23 includes two or more of the plurality of via conductors V1 that are in contact with each other in the direction D3 as shown in Fig. 7 and Fig. 8.

[0102] In the high-frequency module 1c according to the third embodiment, as shown in Figs. 7 and 8, the conductor 23 includes a plurality of linear portions 231 arranged in the direction D2. Note that the second inductor 32 is not shown in Fig. 7. Each of the linear portions 231 extends in the direction D3. Here, each of the linear portions 231 includes a plurality of via conductors V1. The via conductors V1 included in one linear portion 231 are arranged without gaps along the direction D3, as shown in Figs. 7 and 8. The via conductors V1 are arranged with gaps between them in the direction D2, as shown in Fig. 7.

[0103] In the high-frequency module 1c according to the third embodiment, the conductor 23 can be easily formed by arranging a plurality of via conductors V1 so as to have the shape of the conductor 23 when viewed in a plan view from the direction D1.

[0104] (2) Effects In the high-frequency module 1c according to the third embodiment, the mounting substrate 2 includes a plurality of via conductors V1 extending in the thickness direction D1 of the mounting substrate 2. Each of the plurality of linear portions 231 includes two or more of the plurality of via conductors V1 that are in contact with each other in a direction D3 that intersects with the thickness direction D1 of the mounting substrate 2. This makes it possible to easily form the conductor 23 by forming the plurality of via conductors V1 to have the shape of the conductor 23 in a planar view from the direction D1.

[0105] (Embodiment 4) (1) Configuration In the high-frequency module 1 of embodiment 4, the shape of the conductor 23 when viewed in a planar view from direction D1 differs from the shape of the conductor 23 of the high-frequency module 1 of embodiment 1, compared to the configuration of the high-frequency module 1 of embodiment 1.

[0106] In the high-frequency module 1 according to the fourth embodiment, as shown in FIG. 9 , the conductor 23 includes a plurality of linear portions 231. Each of the linear portions 231 includes a portion extending in direction D2 and a portion extending in direction D3. The linear portions 231 include two or more linear portions 231a and two or more linear portions 231b. The two or more linear portions 231a are aligned in direction D4, which is perpendicular to direction D1. The two or more linear portions 231b are aligned in direction D5, which is perpendicular to direction D1. The direction D4 and the direction D5 intersect. More specifically, the direction D4 and the direction D5 are perpendicular to each other. The direction D4 corresponds to the second direction in the present disclosure. The direction D5 corresponds to the third direction in the present disclosure.

[0107] In the conductor 23 of the high-frequency module 1 according to the fourth embodiment, the multiple linear portions 231 do not contact each other in the region AR1. Therefore, in the conductor 23 of the high-frequency module 1 according to the fourth embodiment, a closed circuit that goes around an axis parallel to the direction D1 is also unlikely to be formed. That is, changes in the self-inductance of the first inductor 31 and the self-inductance of the second inductor 32 due to electromagnetic coupling between the conductor 23 and the first inductor 31 or the second inductor 32 are suppressed. Therefore, in the high-frequency module 1 according to the fourth embodiment, it is possible to reduce changes in the characteristics of the first inductor 31 and the second inductor 32.

[0108] (2) Effects In the high-frequency module 1 according to the fourth embodiment, the multiple linear portions 231 include two or more linear portions 231a and two or more linear portions 231b. The two or more linear portions 231a are aligned in a direction D4 perpendicular to the thickness direction D1 of the mounting substrate 2. The two or more linear portions 231b are aligned in a direction D5 perpendicular to the thickness direction D1 of the mounting substrate 2 and intersecting the direction D4. This makes it difficult for the conductor 23 to form a closed circuit around an axis parallel to the direction D1 in the region AR1. That is, changes in the self-inductance of the first inductor 31 and the self-inductance of the second inductor 32 due to electromagnetic coupling between the conductor 23 and the first inductor 31 or the second inductor 32 are suppressed. Therefore, the high-frequency module 1 according to the fourth embodiment can reduce changes in the characteristics of the first inductor 31 and the second inductor 32.

[0109] Fifth Embodiment (1) Configuration A high-frequency module 1d according to the fifth embodiment includes an electronic component 42 instead of the electronic component 41 in the configuration of the high-frequency module 1 according to the first embodiment, as shown in Fig. 10 . The second inductor 32 is disposed on the second main surface 22 of the mounting substrate 2, not on the first main surface 21 of the mounting substrate 2. In the high-frequency module 1d, the first inductor 31 is included in the matching circuit 161, not in the filter 162. In the high-frequency module 1d, the second inductor is included in the matching circuit 161, not in the matching circuit 142.

[0110] 10 , the electronic component 42 is disposed on the first main surface 21 of the mounting substrate 2. The electronic component 42 is, for example, an IC chip including a power amplifier 151. The electronic component 42 is, for example, flip-chip mounted on the first main surface 21 of the mounting substrate 2.

[0111] The first inductor 31 is included in, for example, the matching circuit 161 (see FIG. 3 ). That is, the first inductor 31 is connected to the input terminal of the power amplifier 151.

[0112] The second inductor 32 is included in, for example, the matching circuit 141 (see FIG. 3 ). That is, the second inductor 32 is connected to the input terminal of the power amplifier 151. That is, the power amplifier 151 is connected between the first inductor 31 and the second inductor 32.

[0113] In the high-frequency module 1d according to the fifth embodiment, the conductor 23 reduces electromagnetic coupling between the first inductor 31 and the second inductor 32. Therefore, in the high-frequency module 1d according to the fifth embodiment, isolation between the path connected to the input terminal of the power amplifier 151 and the path connected to the output terminal of the power amplifier 151 is improved. This reduces degradation of the characteristics of the high-frequency module 1. Furthermore, because the inductance and Q value of the first inductor 31 and the second inductor 32 are less likely to vary depending on the distance between the first inductor 31 and the second inductor 32, the high-frequency module 1 can be miniaturized. Furthermore, in the high-frequency module 1d according to the fifth embodiment, the power amplifier 151 is disposed on the first main surface 21 of the mounting substrate 2, which facilitates arranging the low-noise amplifier 152 and the first inductor 31 so that they overlap in a plan view from the direction D1. Therefore, the wiring length between the low-noise amplifier 152 and the first inductor 31 can be further shortened, which facilitates improving the noise resistance of the high-frequency module 1d.

[0114] (2) Effects The high-frequency module 1d according to the fifth embodiment includes a power amplifier 151. The power amplifier 151 is connected between the first inductor 31 and the second inductor 32. This improves isolation between the path connected to the input terminal of the power amplifier 151 and the path connected to the output terminal of the power amplifier 151. This makes it possible to reduce degradation in the characteristics of the high-frequency module 1d.

[0115] Furthermore, in the high-frequency module 1d according to the fifth embodiment, the first inductor 31 is connected to the input terminal of the power amplifier 151. The second inductor 32 is connected to the output terminal of the power amplifier 151. This makes it possible to shorten the wiring length between the power amplifier 151 and the first inductor 31, which facilitates improving the noise resistance of the high-frequency module 1d.

[0116] Furthermore, in the high-frequency module 1d according to the fifth embodiment, the mounting substrate 2 has a first main surface 21. The power amplifier 151 is disposed on the first main surface 21 of the mounting substrate 2. This makes it easy to arrange the power amplifier 151 and the first inductor 31 so that they overlap in a plan view from the direction D1. This makes it possible to further shorten the wiring length between the power amplifier 151 and the first inductor 31, making it easy to improve the noise resistance of the high-frequency module 1d.

[0117] (Modification 1) (1) Configuration In the high-frequency module 1d according to Modification 1 of Embodiment 5, the first inductor 31 is built into the mounting substrate 2, similar to the high-frequency module 1d according to Embodiment 5. On the other hand, in the high-frequency module 1d according to Modification 1 of Embodiment 5, the first inductor 31 is not included in the matching circuit 161.

[0118] The electronic component 42 includes, for example, a heterojunction bipolar transistor (HBT) Q2 as an amplifying element included in the power amplifier 151 (see FIG. 3 ), as shown in FIG. 12 . More specifically, a base electrode BS1 of the transistor Q2 is connected to the input terminal of the power amplifier 151. A collector electrode CO1 of the transistor Q2 is connected to the bias supply circuit B2 and the output terminal of the power amplifier 151. An emitter electrode EM1 of the transistor Q2 is connected to the ground electrode.

[0119] The first inductor 31 is, for example, an inductor L3 connected between the emitter electrode EM1 of the transistor Q2 and the ground electrode. That is, the transistor Q2 and the first inductor 31 are connected in series between the power supply and the ground. In the high-frequency module 1d according to the first modification of the fifth embodiment, isolation between the path connected to the base electrode BS1 of the transistor Q2 of the power amplifier 151 and the path connected to the emitter electrode EM1 of the transistor Q2 of the power amplifier 151 is improved.

[0120] Furthermore, the first inductor 31 may be, for example, an inductor L4 connected between the collector electrode CO1 of the transistor Q2 and the bias supply circuit B2. That is, the transistor Q2 and the first inductor 31 are connected in series between the power supply and ground. Even in this case, isolation between the path connected to the base electrode BS1 of the transistor Q2 of the power amplifier 151 and the path connected to the collector electrode CO1 of the transistor Q2 of the power amplifier 151 is improved.

[0121] (2) Effects The high-frequency module 1d according to the first modification of the fifth embodiment includes a power amplifier 151 and a matching circuit 161. The power amplifier 151 includes a transistor Q2 and a second inductor 32. The matching circuit 161 is connected to the input terminal of the power amplifier 151. The transistor Q2 and the second inductor 32 are connected in series between a power supply and ground. The matching circuit 161 includes the first inductor 31. As a result, the high-frequency module 1d according to the first modification of the fifth embodiment can reduce signal degradation in the power amplifier 151.

[0122] (Modifications) Modifications of the embodiment will be described below.

[0123] The high-frequency modules 1 to 1d according to the first to fifth embodiments and their respective modifications may include a plurality of power amplifiers 151. Similarly, the high-frequency modules 1 to 1d according to the first to fifth embodiments and their respective modifications may include a plurality of low-noise amplifiers 152.

[0124] Furthermore, the high-frequency modules 1 to 1d according to the first to fifth embodiments and their respective modifications may not include the low-noise amplifier 152 but may include one or more power amplifiers 151. Similarly, the high-frequency modules 1 to 1d according to the first to fifth embodiments and their respective modifications may not include the power amplifier 151 but may include one or more low-noise amplifiers 152.

[0125] Furthermore, in the high-frequency modules 1 to 1d according to the first, third to fifth embodiments and their modifications, the second inductor 32 may be replaced with a second inductor 32a.

[0126] Furthermore, in the high-frequency modules 1 to 1d according to embodiments 1 to 3, 5, and their respective modifications, the multiple linear portions 231 are aligned in direction D2 and extend in direction D3. However, in the high-frequency modules 1 to 1d according to embodiments 1 to 3, 5, and their respective modifications, the alignment direction of the multiple linear portions 231 and the extension direction of the multiple linear portions 231 are not limited to this orientation as long as they are both orthogonal to direction D1 and intersect with each other. For example, the multiple linear portions 231 may be aligned in direction D3 and extend in direction D2. Furthermore, when the high-frequency module 1 includes multiple conductors 23, the alignment direction of the multiple linear portions 231 in one conductor 23 may differ from the alignment direction of the multiple linear portions 231 in another conductor 23.

[0127] In the high-frequency module 1b according to the first modification of the second embodiment, the plurality of linear portions 241 are aligned in the direction D1 and extend in the direction D3. However, in the high-frequency module 1b according to the first modification of the second embodiment, the alignment direction of the plurality of linear portions 241 and the extension direction of the plurality of linear portions 241 are not limited to this orientation as long as they are both perpendicular to the direction D2 and intersect with each other. For example, the plurality of linear portions 241 may be aligned in the direction D3 and extend in the direction D1.

[0128] Furthermore, in the high-frequency module 1b according to the first modification of the second embodiment, the conductor 24 is provided between the first inductor 31 and the second inductor 32 and between the third inductor 34 and the inductor 35. However, in the high-frequency module 1b according to the first modification of the second embodiment, the conductor 24 may be disposed between the first inductor 31 and the third inductor 34 and between the second inductor 32 and the inductor 35.

[0129] Furthermore, in the high-frequency modules 1 to 1d according to the first to fifth embodiments and their respective modifications, the mounting substrate 2 may further include a metal layer between the first inductor 31 and the second inductor 32 or 32a in addition to the conductor 23. The metal layer may overlap with the region AR2 of the conductor 23 in a plan view from the direction D1, for example. A magnetic shield may be provided on the surface of the metal layer. The magnetic shield may be, for example, a coating film containing a powder of a magnetic material, a resin containing a powder of a magnetic material, or a sintered body of a powder of a magnetic material. The magnetic material may be, for example, ferrite.

[0130] In the high-frequency modules 1 to 1d according to the first to fifth embodiments and their modifications, the linear portions 231 may be connected to a ground electrode, thereby improving the effect of reducing electromagnetic coupling between the first inductor 31 and the second inductor 32 or 32a by the conductor 23.

[0131] Furthermore, in the high-frequency modules 1 to 1d according to the first to fifth embodiments and their modifications, the linear portions 231 may be in contact with each other in the region AR2. In this case, a closed circuit that goes around an axis parallel to the direction D1 in the conductor 23 is not formed in the region AR1. Furthermore, by connecting the linear portions 231 to each other, it is possible to reduce the occurrence of parasitic capacitance due to the conductor 23.

[0132] (Aspects) A high-frequency module (1 to 1d) according to a first aspect includes a mounting substrate (2), a first inductor (31), and a second inductor (32; 32a). The first inductor (31) is built into the mounting substrate (2). The second inductor (32; 32a) is disposed on the mounting substrate (2). The mounting substrate (2) includes a conductor (23) disposed between the first inductor (31) and the second inductor (32; 32a). In a plan view from the thickness direction (D1) of the mounting substrate (2), the conductor (23) has a region (AR1) overlapping with the first inductor (31) and the second inductor (32; 32a). The conductor (23) includes a plurality of linear portions (231) that do not contact each other in the region (AR1). Each of the plurality of linear portions (231) extends in a direction (D3) intersecting the thickness direction (D1) of the mounting substrate (2).

[0133] According to the high-frequency module (1 to 1d) of the above aspect, it is possible to reduce changes in the characteristics of the first inductor (31) and the second inductor (32; 32a).

[0134] In the high-frequency module (1) according to the second aspect, in the first aspect, the mounting substrate (2) has a main surface (21). The second inductor (32) is disposed on the main surface (21) of the mounting substrate (2).

[0135] The high-frequency module (1) according to the above aspect facilitates the use of a large inductor as the second inductor (32), which in turn facilitates the use of an inductor with a large inductance or Q value as the second inductor (32).

[0136] In the high-frequency module (1a; 1b) according to the third aspect, in the first aspect, the second inductor (32a) is built into the mounting substrate (2).

[0137] According to the high-frequency module (1a; 1b) of the above aspect, the high-frequency module (1a; 1b) can be made smaller by incorporating the second inductor (32a) into the substrate.

[0138] A high-frequency module (1b) according to a fourth aspect is the high-frequency module (1b) of any one of the first to third aspects, further comprising a third inductor (34) and a second conductor (24) different from the first conductor (23), which is a conductor. The third inductor (34) is built into the mounting substrate (2). A direction (D2) in which the first inductor (31) and the third inductor (34) are aligned intersects with a thickness direction (D1) of the mounting substrate (2). In a plan view from the thickness direction (D1) of the mounting substrate (2), the second conductor (24) is disposed between the first inductor (31) and the third inductor (34). The second conductor (24) has a second region (AR3) different from a first region (AR1). The second region (AR3) overlaps the first inductor (31) and the third inductor (34) in a plan view from a direction (D2) in which the first inductor (31) and the third inductor (34) are aligned. The second conductor (24) includes a plurality of second linear portions (241) different from the plurality of first linear portions (231), which are a plurality of linear portions. The plurality of second linear portions (241) do not contact each other in the second region (AR3). Each of the plurality of second linear portions (241) extends in a direction (D3) intersecting the direction (D2) in which the first inductor (31) and the third inductor (34) are aligned.

[0139] According to the high frequency module (1b) of the above aspect, it is possible to reduce changes in the characteristics of the first inductor (31) and the third inductor (34).

[0140] In a high-frequency module (1c) according to a fifth aspect, in any of the first to fourth aspects, the mounting substrate (2) further includes a plurality of via conductors (V1) extending in a thickness direction (D1) of the mounting substrate (2). Each of the plurality of linear portions (231) includes two or more of the plurality of via conductors (V1) that are in contact with each other in a direction (D3) intersecting the thickness direction (D1) of the mounting substrate (2).

[0141] According to the high-frequency module (1c) of the above aspect, the via conductors (V1) are formed to have the shape of the conductor (23) in a planar view from the thickness direction (D1) of the mounting substrate (2), thereby making it possible to easily form the conductor (23).

[0142] In a high-frequency module (1 to 1d) according to a sixth aspect, in any of the first to fifth aspects, the plurality of linear portions (231) are aligned in a second direction (D2) perpendicular to a first direction (D1) that is a thickness direction of the mounting substrate (2). Each of the plurality of linear portions (231) extends in a third direction (D3) perpendicular to the first direction (D1) and the second direction (D2).

[0143] In the high-frequency modules (1 to 1d) according to the above aspects, the conductor (23) in the region (AR1) is not continuous in the second direction (D2), making it difficult to form a closed circuit that goes around an axis parallel to the first direction (D1). Therefore, in the high-frequency modules (1 to 1d), it is possible to reduce changes in the characteristics of the first inductor (31) and the second inductor (32; 32a).

[0144] In a high-frequency module (1 to 1d) according to a seventh aspect, in any of the first to fifth aspects, the plurality of linear portions (231) include two or more linear portions (231a) and two or more linear portions (231b). The two or more linear portions (231a) are aligned in a second direction (D4) perpendicular to a first direction (D1) that is the thickness direction of the mounting substrate (2). The two or more linear portions (231b) are aligned in a third direction (D5) perpendicular to the first direction (D1) and intersecting the second direction (D4).

[0145] In the high-frequency module (1 to 1d) according to the above aspect, the conductor (23) is unlikely to form a closed circuit that goes around an axis parallel to the first direction (D1) in the region (AR1), which makes it possible to reduce changes in the characteristics of the first inductor (31) and the second inductor (32; 32a) in the high-frequency module (1 to 1d).

[0146] A high-frequency module (1 to 1c) according to an eighth aspect is the high-frequency module (1 to 1c) of any one of the first to seventh aspects, further comprising a low-noise amplifier (152). The low-noise amplifier (152) is connected between the first inductor (31) and the second inductor (32; 32a).

[0147] The high-frequency modules (1 to 1c) according to the above aspects can improve isolation between the path connected to the input terminal of the low-noise amplifier (152) and the path connected to the output terminal of the low-noise amplifier (152), thereby reducing degradation in the characteristics of the high-frequency modules (1 to 1c).

[0148] In a high-frequency module (1 to 1c) according to a ninth aspect, in the eighth aspect, the first inductor (31) is connected to an output terminal of the low-noise amplifier (152), and the second inductor (32; 32a) is connected to an input terminal of the low-noise amplifier.

[0149] According to the high-frequency module (1 to 1c) of the above aspect, it is possible to shorten the wiring length between the low-noise amplifier (152) and the first inductor (31), making it easier to improve the noise resistance of the high-frequency module (1 to 1c).

[0150] A high-frequency module (1 to 1c) according to a tenth aspect is any of the first to eighth aspects, further comprising a low-noise amplifier (152) and a matching circuit (142). The low-noise amplifier (152) includes a transistor (Q1) and a first inductor (31). The matching circuit (142) is connected to an input terminal of the low-noise amplifier (152). The transistor (Q1) and the first inductor (31) are connected in series between a power supply and ground. The matching circuit (142) includes a second inductor (32).

[0151] According to the high-frequency module (1 to 1c) of the above aspect, it is possible to reduce signal degradation in the low-noise amplifier (152).

[0152] In a high-frequency module (1 to 1c) according to an eleventh aspect, in any one of the eighth to tenth aspects, the mounting substrate (2) has a main surface (22). The low-noise amplifier (152) is disposed on the main surface (22) of the mounting substrate (2).

[0153] According to the high-frequency modules (1 to 1c) of the above aspects, it is easy to arrange the low-noise amplifier (152) and the first inductor (31) so that they overlap in a plan view in the thickness direction (D1) of the mounting substrate (2). This makes it possible to further shorten the wiring length between the low-noise amplifier (152) and the first inductor (31), making it easy to improve the noise resistance of the high-frequency modules (1 to 1c).

[0154] A high-frequency module (1d) according to a twelfth aspect is the high-frequency module (1d) of any one of the first to eighth aspects, further including a power amplifier (151). The power amplifier (151) is connected between the first inductor (31) and the second inductor (32).

[0155] The high-frequency module (1d) according to the above aspect can improve isolation between the path connected to the input terminal of the power amplifier (151) and the path connected to the output terminal of the power amplifier (151), thereby reducing degradation of the characteristics of the high-frequency module (1d).

[0156] In a high-frequency module (1d) according to a thirteenth aspect, in the twelfth aspect, the first inductor (31) is connected to an input terminal of the power amplifier (151), and the second inductor (32) is connected to an output terminal of the power amplifier (151).

[0157] According to the high-frequency module (1d) of the above aspect, it is possible to shorten the wiring length between the power amplifier (151) and the first inductor (31), making it easier to improve the noise resistance of the high-frequency module (1 to 1c).

[0158] A high-frequency module (1d) according to a fourteenth aspect is any of the first to eighth aspects, further comprising a power amplifier (151) and a matching circuit (161). The power amplifier (151) includes a transistor (Q2) and a second inductor (32). The matching circuit (161) is connected to an input terminal of the power amplifier (151). The transistor (Q2) and the second inductor (32) are connected in series between a power supply and ground. The matching circuit (161) includes a first inductor (31).

[0159] According to the high frequency module (1d) of the above aspect, it is possible to reduce signal degradation in the power amplifier (151).

[0160] In a high-frequency module (1d) according to a fifteenth aspect, in any one of the twelfth to fourteenth aspects, the mounting substrate (2) has a main surface (21). The power amplifier (151) is disposed on the main surface (21) of the mounting substrate (2).

[0161] According to the high-frequency module (1d) of the above aspect, it is easy to arrange the power amplifier (151) and the first inductor (31) so that they overlap each other in a plan view in the thickness direction (D1) of the mounting substrate (2). This makes it possible to further shorten the wiring length between the power amplifier (151) and the first inductor (31), making it easy to improve the noise resistance of the high-frequency module (1d).

[0162] A high-frequency module (1) according to a sixteenth aspect is any one of the first to seventh aspects, further comprising a switch (110) connected to the antenna terminal (11). The switch (110) is connected between the first inductor (31) and the second inductor (32).

[0163] The high-frequency module (1) according to the above aspect can improve isolation between the two paths connected to the switch (110). Therefore, in the high-frequency module (1) according to the third modification, the thickness of the mounting substrate (2) can be reduced compared to a configuration that does not include the conductor (23), and the high-frequency module (1) can be made smaller.

[0164] In the high-frequency module (1 to 1d) according to the seventeenth aspect, in any of the first to sixteenth aspects, each of the plurality of linear portions (231) has a length in the extension direction (D3) that is equal to or greater than the length (d2) of the region (AR1) in the extension direction (D3).

[0165] According to the high-frequency module (1 to 1d) of the above aspect, the conductor (23) can reduce the passage of magnetic flux along the thickness direction (D1) of the mounting substrate (2).

[0166] A communication device (100) according to an eighteenth aspect includes a high-frequency module (1 to 1d) according to any one of the first to seventeenth aspects, and a signal processing circuit (17) connected to the high-frequency module (1 to 1d).

[0167] According to the communication device (100) of the above aspect, it is possible to reduce changes in the characteristics of the first inductor (31) and the second inductor (32; 32a) in the high-frequency module (1-1d).

[0168] REFERENCE SIGNS 1, 1a, 1b, 1c, 1d High frequency module 2 Mounting substrate 21 First main surface (main surface) 22 Second main surface (main surface) 23 Conductor (first conductor) 23a Conductor 23b Conductor 23c Conductor 23d Conductor 231 Linear portion (first linear portion) 231a Linear portion 231b Linear portion 24 Conductor (second conductor) 241 Linear portion 241 Second linear portion 31 First inductor 32, 32a Second inductor 33 Inductor 34 Third inductor 35 Inductor 41 Electronic component 42 Electronic component 10 External connection terminal 11 Antenna terminal 12 Signal input terminal 13 Signal output terminal 110 Switch 111 Common terminal 112 Selection terminal 113 Selection terminal 121 Matching circuit 122 Matching circuit 131 Transmit filter 132 Receiving filter 141 Matching circuit 142 Matching circuit 151 Power amplifier 152 Low noise amplifier 161 Matching circuit 162 Filter 181 Matching circuit 100 Communication device 16 Antenna 17 Signal processing circuit 171 RF signal processing circuit 172 Baseband signal processing circuit AR1 Region (first region) AR2 Region AR3 Region (second region) d1 Width d2 Length D1 Direction (first direction) D2 Direction (second direction) D3 Direction (third direction) D4 Direction (second direction) D5 Direction (third direction) V1 Via conductor Q1 Transistor G1 Gate electrode S1 Source electrode DR1 Drain electrode B1 Bias supply circuit L1, L2 Inductor Q2 Transistor BS1 Base electrode EM1 Emitter electrode CO1 Collector electrode B2 Bias supply circuit L3, L4 Inductor

Claims

1. A high-frequency module comprising: a mounting board; a first inductor built into the mounting board; and a second inductor arranged on the mounting board; the mounting board including a conductor arranged between the first inductor and the second inductor; in a plan view in the thickness direction of the mounting board, the conductor has an area overlapping with the first inductor and the second inductor; the conductor includes a plurality of linear portions that do not contact each other in the area; and each of the plurality of linear portions extends in a direction intersecting the thickness direction of the mounting board.

2. The high-frequency module according to claim 1, wherein the mounting substrate has a main surface, and the second inductor is disposed on the main surface of the mounting substrate.

3. The high frequency module according to claim 1, wherein the second inductor is built into the mounting substrate.

4. The high-frequency module according to any one of claims 1 to 3, further comprising: a third inductor built into the mounting board; and a second conductor different from the first conductor, which is the conductor; the direction in which the first inductor and the third inductor are aligned intersects with the thickness direction of the mounting board; in a plan view from the thickness direction of the mounting board, the second conductor is arranged between the first inductor and the third inductor; in a plan view from the direction in which the first inductor and the third inductor are aligned, the second conductor has a second region different from the first region, which is the region, and which overlaps with the first inductor and the third inductor; the second conductor includes a plurality of second linear portions different from the plurality of first linear portions, which are the plurality of linear portions, and which do not contact each other in the second region; and each of the plurality of second linear portions extends in a direction intersecting the direction in which the first inductor and the third inductor are aligned.

5. A high-frequency module according to any one of claims 1 to 4, wherein the mounting substrate further includes a plurality of via conductors extending in a thickness direction of the mounting substrate, and each of the plurality of linear portions includes two or more of the plurality of via conductors that are in contact with each other in a direction intersecting the thickness direction of the mounting substrate.

6. A high-frequency module according to any one of claims 1 to 5, wherein the plurality of linear portions are aligned in a second direction perpendicular to a first direction that is the thickness direction of the mounting substrate, and each of the plurality of linear portions extends in a third direction perpendicular to the first direction and the second direction.

7. A high-frequency module according to any one of claims 1 to 5, wherein the plurality of linear portions include two or more linear portions aligned in a second direction perpendicular to a first direction that is the thickness direction of the mounting substrate, and two or more linear portions aligned in a third direction perpendicular to the first direction and intersecting with the second direction.

8. The high-frequency module according to any one of claims 1 to 7, further comprising a low-noise amplifier connected between the first inductor and the second inductor.

9. The high-frequency module according to claim 8, wherein the first inductor is connected to an output terminal of the low-noise amplifier, and the second inductor is connected to an input terminal of the low-noise amplifier.

10. The high-frequency module according to any one of claims 1 to 8, further comprising: a low-noise amplifier including a transistor and the first inductor; and a matching circuit connected to an input terminal of the low-noise amplifier, wherein the transistor and the first inductor are connected in series between a power supply and ground, and the matching circuit includes the second inductor.

11. The high-frequency module according to any one of claims 8 to 10, wherein the mounting substrate has a main surface, and the low-noise amplifier is disposed on the main surface of the mounting substrate.

12. The high-frequency module according to any one of claims 1 to 8, further comprising a power amplifier connected between the first inductor and the second inductor.

13. The high-frequency module according to claim 12, wherein the first inductor is connected to an input terminal of the power amplifier, and the second inductor is connected to an output terminal of the power amplifier.

14. The high-frequency module according to any one of claims 1 to 8, further comprising: a power amplifier including a transistor and the second inductor; and a matching circuit connected to an input terminal of the power amplifier, wherein the transistor and the second inductor are connected in series between a power supply and ground, and the matching circuit includes the first inductor.

15. The high-frequency module according to any one of claims 12 to 14, wherein the mounting substrate has a main surface, and the power amplifier is disposed on the main surface of the mounting substrate.

16. The high-frequency module according to any one of claims 1 to 7, further comprising a switch connected to an antenna terminal, the switch being connected between the first inductor and the second inductor.

17. The high-frequency module according to any one of claims 1 to 16, wherein the length of each of the plurality of linear portions in the extension direction is equal to or greater than the length of the region in the extension direction.

18. A communication device comprising: a high-frequency module according to any one of claims 1 to 17; and a signal processing circuit connected to the high-frequency module.

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