Chemical liquid conveying unit for rapid temperature adjustment, and chemical mechanical planarization device

Abstract

A chemical liquid conveying unit for rapid temperature adjustment, comprising: a liquid conveying pipe (1) having a liquid conveying channel (11) formed inside; a semiconductor electrothermal module (2) arranged on the outer side of the liquid conveying pipe (1) and attached to the outer wall of the liquid conveying pipe (1); and a heat flowing unit (3) having a heat transfer medium flowing therein, attached to the semiconductor electrothermal module (2), and used for supplying heat required by the semiconductor electrothermal module (2) or for receiving heat conducted from the semiconductor electrothermal module (2); wherein the semiconductor electrothermal module (2) has a first heat conduction state and a second heat conduction state; when the temperature of liquid in the liquid conveying channel (11) is lower than a target temperature, the semiconductor electrothermal module (2) enters the first heat conduction state, and the temperature of the heat transfer medium is conducted to the liquid in the liquid conveying channel; and when the temperature of the liquid in the liquid conveying channel (11) is higher than the target temperature, the semiconductor electrothermal module (2) enters the second heat conduction state, and the temperature of the liquid in the liquid conveying channel (11) is conducted to the heat transfer medium. The present invention further relates to a chemical mechanical planarization device. The chemical liquid conveying unit for rapid temperature adjustment adjusts the temperature of the liquid in the liquid conveying channel rapidly and accurately, and is capable of adjusting the temperature up or down.

Description

A chemical liquid delivery unit for rapid temperature adjustment and chemical mechanical planarization equipment Technical Field

[0001] The present invention belongs to the technical field of semiconductor integrated circuit chip manufacturing, and in particular relates to a chemical liquid delivery unit for rapid temperature regulation and a chemical mechanical planarization device. Background Art

[0002] Planarization technology has become one of the indispensable key technologies in the semiconductor integrated circuit chip manufacturing process. The Chemical Mechanical Planarization (CMP) process is currently the most effective and mature planarization technology. CMP equipment is fully automated, ensuring the safety of every module and every link in the wafer production process. It is of great significance for safe production, reducing losses, and improving production efficiency. During the wafer planarization process, reaction temperature is one of the important factors affecting the rate of material removal from the wafer surface. The overall reaction temperature and the temperature distribution in the radial direction of the wafer will affect the average thickness, flatness and production efficiency of the product surface layer. Therefore, precise control of the temperature of the wafer, polishing liquid and polishing pad is one of the keys to chemical mechanical planarization.

[0003] The chemical mechanical planarization equipment consists of a polishing pad base, a polishing head, a polishing pad dresser, and a slurry delivery arm. During operation, a flexible cavity beneath the polishing head uses air pressure to hold the wafer in place. Air pressure then presses the wafer between the polishing pad and the polishing head, while the delivery arm delivers the polishing slurry onto the pad. During operation, the polishing head and pad rotate, and the slurry enters the contact surface between the wafer and the polishing pad beneath the polishing head. A chemical mechanical process occurs at this interface, gradually removing material from the wafer surface and reducing its thickness, ultimately yielding a wafer with specific surface topography and features. The polishing pad dresser rotates and oscillates to remove any residual reaction products from the polishing pad, keeping the pad surface clean. During actual production, significant heat is generated between the wafer, polishing slurry, and polishing pad. This heat causes the wafer, pad, polishing head, and other components to gradually warm from room temperature, increasing the removal rate of the wafer surface layer. At the same time, if the temperature of the supplied grinding liquid is always kept at room temperature, the grinding liquid will cause the temperature of the periphery of the wafer that contacts the grinding liquid first to drop, resulting in a radial temperature difference of the wafer, and the temperature in the center of the wafer is higher than the temperature in the periphery, which in turn causes the center removal rate to be higher than the periphery removal rate, and ultimately causes adverse consequences such as wafer concavity and decreased flatness.

[0004] The first type of existing improvement solution is to preheat the polishing slurry in a constant temperature container to the high temperature that the polishing pad is expected to reach and maintain later in the polishing process. The polishing process is then performed directly using the high-temperature polishing slurry. This solution can maintain a consistent radial removal rate on the wafer in the middle and later stages of polishing. However, in the early stages of polishing, the contact of the high-temperature polishing slurry with the room-temperature wafer will cause the circumferential area that first contacts the polishing slurry to be hotter than the center, resulting in a lower removal rate at the center than at the circumference.

[0005] The second type of existing improvement scheme is based on the first type, which collects the temperature of the polishing pad in real time and heats the supplied polishing liquid in real time to a temperature that matches the polishing pad. However, after each wafer is polished, the polishing pad must be cleaned with deionized water to keep it clean. The polishing pad will quickly cool down to room temperature during this process, but the heated polishing liquid remaining in the heating pipe cannot be quickly cooled to the corresponding temperature. Although the wafer flatness is improved in this scheme, the initial stage of polishing will still be affected by certain adverse consequences caused by the temperature difference. In view of this, some users will pre-drain the high-temperature polishing liquid remaining in the heating pipe before polishing the next wafer. Doing so in the long run will result in a large amount of polishing liquid waste.

[0006] The third type of existing improvement scheme builds on the second type by rinsing the polishing pad with high-temperature deionized water after polishing, or by using additional equipment or components to preheat the polishing pad to a high temperature after rinsing with room-temperature deionized water, thereby maintaining a consistent high temperature for all polishing components. However, this type of solution has the disadvantages of high energy consumption (consistent use of high-temperature deionized water) and complex structure and inconvenient maintenance (additional polishing pad heating components).

[0007] The existing fourth type of improvement scheme is based on the second type. Coolant is added to the polishing pad base to keep the overall polishing process at a lower temperature and reduce the temperature difference between the polishing liquid and the wafer in the initial stage of polishing. This scheme can effectively improve the quality of the product surface. However, the overall temperature reduction will cause the overall removal rate to decrease, which in turn requires increasing the polishing time of a single wafer, reducing the wafer processing efficiency.

[0008] Therefore, considering multiple factors such as product surface quality, production energy consumption, production efficiency, equipment cost and maintenance, the current grinding fluid temperature control system still has many shortcomings. Summary of the Invention

[0009] In order to overcome the shortcomings of the existing technology, the present invention provides a chemical liquid delivery unit and chemical mechanical planarization equipment for rapid temperature adjustment, which has a fast temperature adjustment speed for the chemical liquid and can achieve temperature increase or decrease to ensure planarization efficiency and planarization effect.

[0010] The technical solution adopted by the present invention to solve the technical problem is: a chemical liquid delivery unit for rapid temperature adjustment, comprising:

[0011] an infusion tube made of a heat-conducting material and having at least one infusion channel formed therein;

[0012] The semiconductor electric heating module is arranged outside the infusion tube and at least partially adheres to the outer wall of the infusion tube;

[0013] a heat flow unit, in which a heat carrier flows, and at least a portion of which is in contact with the semiconductor electric heating module, and is used to provide the heat required by the semiconductor electric heating module, or to receive heat conducted from the semiconductor electric heating module;

[0014] The semiconductor electric heating module has a first heat conduction state and a second heat conduction state;

[0015] When the temperature of the liquid in the infusion channel is lower than the target temperature, the semiconductor electric heating module may enter a first heat conduction state, and the temperature of the heat carrier is transferred to the liquid in the infusion channel;

[0016] When the temperature of the liquid in the infusion channel is higher than the target temperature, the semiconductor electric heating module may enter a second heat conduction state, and the temperature of the liquid in the infusion channel is conducted to the heat carrier.

[0017] Furthermore, there are multiple infusion channels, and the liquids in at least two of the infusion channels flow in opposite directions.

[0018] Furthermore, the liquids in at least two infusion channels flow in opposite directions, and the two infusion channels are interconnected.

[0019] Furthermore, the infusion tube has a revolving channel, which is used to connect the infusion channels with opposite liquid flow directions.

[0020] Furthermore, the infusion tube is provided with a cover plate, and the rotation channel is formed on the cover plate.

[0021] Furthermore, the infusion channels are continuously arranged, and the rotary channel is located inside the infusion tube.

[0022] Furthermore, there is one infusion channel, and the flow direction of the liquid inside the infusion channel is variable.

[0023] Furthermore, the heat flow unit is provided with one or two or more branch channels and an end cover, and the end cover has a circuitous channel for connecting the branch channels.

[0024] Furthermore, the cover plate and the end cover are integrally provided; or, the cover plate and the end cover are separately provided.

[0025] Furthermore, the infusion channel is at least partially spiral, or at least partially linear, or the infusion channel at least includes a bending section for changing the flow direction of the internal liquid.

[0026] Furthermore, the semiconductor electric heating module enters a first heat conduction state when a forward voltage is applied, and enters a second heat conduction state when a reverse voltage is applied; or, the semiconductor electric heating module enters a second heat conduction state when a forward voltage is applied, and enters a first heat conduction state when a reverse voltage is applied.

[0027] Furthermore, the heat flow unit is an annular channel wrapped around the outer circumference of the infusion tube, which clamps the semiconductor electric heating module facing the infusion tube.

[0028] Furthermore, the heat carrier circulates to provide or receive heat conducted from the semiconductor electric heating module.

[0029] Furthermore, the thermal conductivity of the heat carrier is greater than or equal to 100 W / (m·K).

[0030] Furthermore, the heat carrier is water.

[0031] Furthermore, the material of the infusion tube is graphite, or aluminum nitride, or silicon carbide, or aluminum oxide, or silicon.

[0032] Furthermore, the infusion channel is a linear channel, or a spiral channel, or a curved channel.

[0033] Furthermore, the temperature of the liquid in the infusion channel is adjusted within a range of 5-60°C.

[0034] Furthermore, the longitudinal cross-section of the infusion tube is circular, or elliptical, or has an arc-shaped structure.

[0035] Furthermore, the longitudinal section of the infusion tube is triangular or polygonal.

[0036] Furthermore, the semiconductor electric heating module includes a plurality of semiconductor electric heating units, which are connected in series.

[0037] Furthermore, the semiconductor electric heating module is a bismuth telluride thermal conductive sheet.

[0038] The present invention also discloses a chemical mechanical planarization device, comprising a polishing table, a polishing head, a dresser, and a grinding liquid delivery arm, wherein the grinding liquid delivery arm comprises the above-mentioned chemical liquid delivery unit.

[0039] The beneficial effects of the present invention are: 1) the temperature of the liquid in the infusion channel is adjusted quickly and accurately, including raising and lowering the temperature; 2) when the liquid in the infusion channel is grinding liquid, the temperature of the grinding liquid can be quickly switched in both directions, and the purpose of heating and cooling can be achieved through a device; 3) it effectively targets the characteristics of the grinding liquid with a small temperature adjustment range and a high temperature adjustment speed requirement; 4) the liquids in at least two infusion channels flow in opposite directions, realizing the return of the liquid, and the liquids with different flow directions are heated or cooled at the same time. The liquid stays in the heating or cooling environment for a long time, the heat exchange is more sufficient, and the temperature adjustment efficiency is high; 5) energy consumption is reduced, and a large amount of high-temperature cleaning liquid or grinding pad heater is avoided to maintain the temperature of the grinding pad; 6) production efficiency is improved, and the overall reduction in wafer removal rate and production efficiency caused by the use of cooling water for the grinding pad base is avoided; 7) through the infusion tube and the heat In conjunction with the flow unit, the semiconductor electric heating module is used to exchange the heat of the peripheral heat flow unit with the heat of the liquid in the internal infusion channel, which can transfer more heat to the infusion channel to improve the heating effect. At the same time, during cooling, more heat can be taken away from the infusion channel to improve the cooling effect and be more flexible in application; 8) Compared with using a resistance wire to heat the infusion tube in one direction, the semiconductor electric heating module can heat or cool in a direction. Compared with using a resistance wire to heat the infusion tube, the semiconductor electric heating module does not need to be insulated to regulate the temperature of the liquid in the infusion channel, which will not cause the volume of the grinding liquid delivery arm to increase, saves isolation costs, and has high energy utilization; 9) The temperature of the liquid in the infusion channel is set by the use temperature of the grinding liquid and is adjusted according to actual needs. A temperature sensor can be set in the infusion channel to provide timely feedback of temperature information for precise temperature control. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] FIG1 is a schematic diagram of the three-dimensional structure of a chemical liquid delivery unit provided in Embodiment 1 of the present invention.

[0041] FIG2 is a first schematic diagram of the three-dimensional structure of the chemical liquid delivery unit provided in the second embodiment of the present invention.

[0042] FIG3 is a second schematic diagram of the three-dimensional structure of the chemical liquid delivery unit provided in the second embodiment of the present invention.

[0043] FIG4 is a third schematic diagram of the three-dimensional structure of the chemical liquid delivery unit provided in the second embodiment of the present invention.

[0044] FIG5 is a first schematic diagram of an infusion tube provided in the third embodiment of the present invention.

[0045] FIG6 is a second schematic diagram of the infusion tube provided in the third embodiment of the present invention.

[0046] FIG7 is a third schematic diagram of the infusion tube provided in the third embodiment of the present invention.

[0047] FIG8 is a first schematic diagram of a partial three-dimensional structure of a chemical liquid delivery unit provided in the fourth embodiment of the present invention.

[0048] FIG9 is a schematic diagram of an infusion tube provided in a fourth embodiment of the present invention.

[0049] FIG10 is a second schematic diagram of a partial three-dimensional structure of the chemical liquid delivery unit provided in the fourth embodiment of the present invention.

[0050] FIG11 is a schematic diagram of the three-dimensional structure of the chemical liquid delivery unit provided in the fifth embodiment of the present invention.

[0051] FIG12 is a schematic diagram of a partial three-dimensional structure of a chemical liquid delivery unit provided in the fifth embodiment of the present invention.

[0052] FIG13 is a front view of the chemical liquid delivery unit provided in the fifth embodiment of the present invention.

[0053] FIG14 is a BB cross-sectional view of FIG13 .

[0054] FIG15 is a cross-sectional view taken along line AA in FIG13 .

[0055] FIG16 is a schematic diagram of the chemical mechanical planarization apparatus provided by the present invention.

[0056] FIG17 is a simplified diagram of the grinding liquid delivery arm of the present invention.

[0057] FIG18 is a second simplified diagram of the grinding liquid delivery arm of the present invention.

[0058] FIG19 is a schematic diagram of the working process of the grinding liquid temperature control system in the present invention.

[0059] Among them, 1-infusion tube, 11-infusion channel, 12-rotation channel, 13-cover plate, 14-bending section, 2-semiconductor electric heating module, 21-semiconductor electric heating unit, 3-heat flow unit, 31-branch channel, 32-end cover, 4-grinding liquid delivery arm, 5-polishing table, 51-polishing pad, 6-polishing head, 7-dresser. DETAILED DESCRIPTION

[0060] In order to enable those skilled in the art to better understand the solutions of the present invention, the following will provide a clear and complete description of the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts should fall within the scope of protection of the present invention. Example 1

[0061] As shown in FIG1 , a chemical liquid delivery unit for rapid temperature control includes a liquid delivery tube 1 made of a heat-conducting material, a semiconductor electric heating module 2 arranged outside the liquid delivery tube 1 , and a heat flow unit 3 with a heat carrier flowing inside.

[0062] At least one infusion channel 11 is formed inside the infusion tube 1, at least a portion of the semiconductor electric heating module 2 is in contact with the outer wall of the infusion tube 1, at least a portion of the heat flow unit 3 is in contact with the semiconductor electric heating module 2, and the heat flow unit 3 is used to provide the heat required by the semiconductor electric heating module 2, or it is used to receive heat conducted from the semiconductor electric heating module 2.

[0063] The semiconductor electric heating module 2 has a first heat conduction state and a second heat conduction state. When the liquid temperature in the infusion channel 11 is lower than the target temperature, the semiconductor electric heating module 2 can enter the first heat conduction state. At this time, the temperature of the heat carrier is transferred from the heat flow unit 3 to the liquid in the infusion channel 11, causing the temperature of the liquid in the infusion channel 11 to increase; when the liquid temperature in the infusion channel 11 is higher than the target temperature, the semiconductor electric heating module 2 can enter the second heat conduction state. At this time, the liquid temperature in the infusion channel 11 is transferred to the heat carrier, causing the temperature of the liquid in the infusion channel 11 to decrease.

[0064] The heat carrier can flow in one direction or in a circulating flow in the heat flow unit 3, thereby providing or receiving heat conducted from the semiconductor electric heating module 2. Of course, it is not ruled out that the heat carrier is relatively stationary in the heat flow unit 3.

[0065] In this embodiment, the material of the infusion tube 1 is graphite, or aluminum nitride, or silicon carbide, or aluminum oxide, or silicon, which are high thermal conductivity materials, and there is no specific limitation. The temperature adjustment range of the liquid in the infusion channel 11 is 5-60°C. The temperature adjustment range here means that the liquid in the infusion channel 11 can be adjusted to a minimum of 5°C and a maximum of 60°C. That is to say, the temperature of the liquid in the infusion channel 11 will not be too high, which prevents the infusion tube 1 from melting due to heat and also prevents the infusion tube 1 from reacting with the liquid inside. The heat flow unit 3 is an annular channel wrapped around the outer circumference of the infusion tube 1, which clamps the semiconductor electric heating module 2 facing the infusion tube 1; the heat carrier in the heat flow unit 3 can be water, or other media, as long as the thermal conductivity of the heat carrier is greater than or equal to 100W / (m·K). The longitudinal section of the infusion tube 1 is circular. Of course, the longitudinal section of the infusion tube 1 can also be elliptical, or a shape with an arc structure.

[0066] Specifically, the semiconductor electric heating module 2 enters a first heat conduction state when a forward voltage is applied, and enters a second heat conduction state when a reverse voltage is applied; alternatively, the semiconductor electric heating module 2 enters a second heat conduction state when a forward voltage is applied, and enters a first heat conduction state when a reverse voltage is applied. In other words, when powered on, the semiconductor electric heating module 2 can transfer heat from one side of the module to the other side in the absence of a temperature difference or when the temperature difference is negative, and the power and direction of the heat flow change with the direction and magnitude of the current, meaning that the direction of heat flow can be controlled by the current.

[0067] The semiconductor electric heating module 2 includes multiple semiconductor electric heating units 21 connected in series. Even if some of the semiconductor electric heating units 21 are damaged or malfunction, the effective use of the semiconductor electric heating module 2 is not affected. In this embodiment, the semiconductor electric heating units 21 are arc-shaped and adhere to the outer wall of the infusion tube 1. There are two semiconductor electric heating units 21 connected in series. The semiconductor electric heating module 2 specifically uses a bismuth telluride thermal conductive sheet. Example 2

[0068] As shown in Figures 2-4, in this embodiment, the longitudinal cross-section of the infusion tube 1 is a quadrilateral, triangular, or pentagonal shape. Accordingly, to ensure that the semiconductor electric heating module 2 fits snugly with the infusion tube 1 and the heat flow unit 3, the cross-section of the heat flow unit 3 is also a quadrilateral, triangular, or pentagonal ring. In this case, the number of semiconductor electric heating units 21 is the same as the number of sides in the cross-section of the infusion tube 1, and all are connected in series.

[0069] The other structures are the same as those in the first embodiment and will not be described in detail. Example 3

[0070] The number of the infusion channel 11 in the infusion tube 1 is one. As shown in FIG5 , it may be a linear channel; as shown in FIG7 , it may be a spiral channel; as shown in FIG6 , it may be a curved channel.

[0071] Of course, the infusion channel 11 may be partially spiral, partially linear, or partially curved. In other words, the specific shape of the infusion channel 11 is not limited, and the infusion channel 11 may include a variety of shapes. Preferably, the infusion channel 11 includes a curved section 14 for changing the flow direction of the liquid therein. The change in flow direction may be to a completely opposite direction or to a direction at an angle to the original direction. In other words, when the infusion channel 11 is partially curved or partially spiral, it includes a curved section 14, and this is not specifically limited.

[0072] The liquid flow direction inside the infusion channel 11 can be from left to right, or from right to left, or can be alternately from left to right and then from right to left, that is, the liquid flow direction inside the infusion channel 11 is variable.

[0073] The other structures are the same as those in the first embodiment and will not be described in detail. Example 4

[0074] There is no limit to the number of infusion channels 11 in the infusion tube 1, which can be one or two or more. When there are multiple infusion channels 11, the liquid in at least two infusion channels 11 flows in opposite directions.

[0075] As shown in FIG8 , the infusion tube 1 has three infusion channels 11, wherein the liquid flows in the same direction in two of the infusion channels 11, while the liquid flows in the opposite direction in the other infusion channel 11. A reversal channel 12 is provided at the end of the infusion tube 1, which is used to connect the infusion channels 11 with opposite liquid flows. In the above structure, the reversal channel 12 is located outside the end of the infusion tube 1. As shown in FIG9 , the reversal channel 12 is located inside the end of the infusion tube 1, i.e., in this case, multiple infusion channels 11 are arranged continuously. In this case, the reversal channel 12 can also be formed by a bent section 14 structure.

[0076] In Figure 8, the rotary channel 12 and the infusion channel 11 are arranged integrally. Of course, in other embodiments, the rotary channel 12 can also be arranged separately from the infusion channel 11, that is, the infusion channel 11 runs through the entire length of the infusion tube 1, and the rotary channel 12 is sealed and inserted at the end of the infusion channel 11.

[0077] As shown in FIG10 , a cover plate 13 may be provided at the end of the infusion channel 11. The aforementioned rotary channel 12 is formed on the cover plate 13. The rotary channel 12 may be entirely located within the cover plate 13. In this case, the cover plate 13 may be relatively thick. Alternatively, the rotary channel 12 may be integrally connected to the cover plate 13, with a portion protruding from the surface of the cover plate 13. The provision of the cover plate 13 reduces the difficulty of machining the rotary channel 12.

[0078] The other structures are the same as those in the first embodiment and will not be described in detail. Example 5

[0079] As shown in FIG. 11 to FIG. 15 , one or two or more branch channels 31 and an end cover 32 are provided in the heat flow unit 3 . The end cover 32 has a circuitous channel for connecting the branch channels 32 .

[0080] Similar to the infusion channel 11 , the branch channel 31 may be a linear channel, a spiral channel, or a curved channel.

[0081] The heat carriers flow in opposite directions in at least two branch channels 32 , and the circuitous channel is used to connect the branch channels 32 with opposite liquid flow directions.

[0082] Of course, the detour channel may not be provided in the end cover 32 , and may be integrally provided inside or outside the heat flow unit 3 , without specific limitation.

[0083] When the liquid infusion tube 1 has a cover plate 13 and the heat flow unit 3 has an end cover 32 , the cover plate 13 and the end cover 32 may be provided as one piece or as separate pieces. Example 6

[0084] As shown in Figures 16-18, a chemical mechanical planarization device includes a polishing table 5, a polishing head 6, a dresser 7, and a grinding liquid delivery arm 4. A grinding pad 51 is placed on the polishing table 5, and the grinding liquid delivery arm 4 includes a chemical liquid delivery unit of any one of Examples 1 to 5.

[0085] When in use, when the semiconductor electric heating module 2 is passed through a forward current, the heat of the circulating water in the heat flow unit 3 will be transferred to the infusion channel 11 of the infusion tube 1, thereby achieving the purpose of heating the grinding fluid; when the semiconductor electric heating module 2 is passed through a reverse current, the heat of the grinding fluid in the infusion channel 11 will be transferred to the circulating water in the heat flow unit 3, thereby achieving the purpose of cooling the grinding fluid.

[0086] Specifically, the polishing liquid supply outputs the polishing liquid to the polishing liquid transmission pipeline at a set flow rate, and the polishing liquid reaches the outlet of the polishing liquid delivery arm 4 through the polishing liquid transmission pipeline, and then the polishing liquid falls on a specific position of the polishing pad 51 through the outlet of the polishing liquid delivery arm 4.

[0087] Figure 19 shows a schematic diagram of the polishing liquid temperature control system's workflow. Three temperature sensors are used to detect the temperatures at the polishing liquid supply, the outlet of the polishing liquid delivery arm 4, and the polishing pad 51, respectively. These temperature data are transmitted in real time to the main temperature control circuit. Based on the data from the three temperature sensors and the programmed temperature change pattern, the temperature control circuit controls the magnitude and direction of the current flowing in the semiconductor electric heating module 2 in real time, thereby regulating the power of the semiconductor electric heating unit 21 and, consequently, the temperature of the liquid in the infusion channel 11, ensuring that the polishing liquid flowing out of the polishing liquid delivery arm 4 meets the temperature set by the main controller.

[0088] In practical applications, the temperature of the heat carrier in the heat flow unit 3 is selected according to the temperature range to which the grinding fluid needs to be adjusted, or the flow rate of the heat carrier in the heat flow unit 3 is adjusted, or the temperature and flow rate of the heat carrier in the heat flow unit 3 are adjusted.

[0089] The above specific embodiments are used to illustrate the present invention rather than to limit the present invention. Any modifications and changes made to the present invention within the spirit of the present invention and the protection scope of the claims shall fall within the protection scope of the present invention.

Claims

1. A chemical liquid delivery unit for rapid temperature adjustment, characterized in that: include: an infusion tube made of a heat-conducting material and having at least one infusion channel formed therein; The semiconductor electric heating module is arranged outside the infusion tube and at least partially adheres to the outer wall of the infusion tube; a heat flow unit, in which a heat carrier flows, and at least a portion of which is in contact with the semiconductor electric heating module, and is used to provide the heat required by the semiconductor electric heating module, or to receive heat conducted from the semiconductor electric heating module; The semiconductor electric heating module has a first heat conduction state and a second heat conduction state; When the temperature of the liquid in the infusion channel is lower than the target temperature, the semiconductor electric heating module may enter a first heat conduction state, and the temperature of the heat carrier is transferred to the liquid in the infusion channel; When the temperature of the liquid in the infusion channel is higher than the target temperature, the semiconductor electric heating module may enter a second heat conduction state, and the temperature of the liquid in the infusion channel is conducted to the heat carrier.

2. The chemical liquid delivery unit for rapid temperature adjustment according to claim 1, characterized in that: There are multiple infusion channels, and the liquids in at least two of the infusion channels flow in opposite directions.

3. The chemical liquid delivery unit for rapid temperature adjustment according to claim 1 or 2, characterized in that: The liquids in at least two infusion channels flow in opposite directions, and the two infusion channels are connected.

4. The chemical liquid delivery unit for rapid temperature adjustment according to claim 3, characterized in that: The infusion tube has a reversal channel, which is used to connect the infusion channels with opposite liquid flow directions.

5. The chemical liquid delivery unit for rapid temperature adjustment according to claim 4, characterized in that: The infusion tube is provided with a cover plate, and the rotation channel is formed on the cover plate.

6. The chemical liquid delivery unit for rapid temperature adjustment according to claim 4, characterized in that: The infusion channels are continuously arranged, and the rotary channel is located inside the infusion tube.

7. The chemical liquid delivery unit for rapid temperature adjustment according to claim 1, characterized in that: There is one infusion channel, and the flow direction of the liquid inside the infusion channel is variable.

8. The chemical liquid delivery unit for rapid temperature adjustment according to claim 5, characterized in that: The heat flow unit is provided with one or two or more branch channels and an end cover, and the end cover has a circuitous channel for connecting the branch channels.

9. The chemical liquid delivery unit for rapid temperature adjustment according to claim 8, characterized in that: The cover plate and the end cover are integrally provided; or, the cover plate and the end cover are separately provided.

10. The chemical liquid delivery unit for rapid temperature adjustment according to claim 1 or 2, characterized in that: The infusion channel is at least partially spiral, or at least partially linear, or the infusion channel at least includes a bending section for changing the flow direction of the internal liquid.

11. The chemical liquid delivery unit for rapid temperature control according to claim 1, characterized in that: The semiconductor electrothermal module enters a first heat conduction state when a forward voltage is applied, and enters a second heat conduction state when a reverse voltage is applied; Alternatively, the semiconductor electric heating module enters the second heat conduction state when a forward voltage is applied, and enters the first heat conduction state when a reverse voltage is applied.

12. The chemical liquid delivery unit for rapid temperature adjustment according to claim 1, characterized in that: The heat flow unit is an annular channel wrapped around the outer periphery of the infusion tube, and clamps the semiconductor electric heating module facing the infusion tube.

13. The chemical liquid delivery unit for rapid temperature control according to claim 1, characterized in that: The heat carrier circulates to provide or receive heat conducted from the semiconductor electric heating module.

14. The chemical liquid delivery unit for rapid temperature adjustment according to claim 1 or 12, characterized in that: The thermal conductivity of the heat carrier is greater than or equal to 100 W / (m·K).

15. The chemical liquid delivery unit for rapid temperature adjustment according to claim 1 or 12, characterized in that: The heat carrier is water.

16. The chemical liquid delivery unit for rapid temperature control according to claim 1, characterized in that: The material of the infusion tube is graphite, or aluminum nitride, or silicon carbide, or aluminum oxide, or silicon.

17. The chemical liquid delivery unit for rapid temperature control according to claim 1, characterized in that: The infusion channel is a linear channel, a spiral channel, or a curved channel.

18. The chemical liquid delivery unit for rapid temperature control according to claim 1, characterized in that: The temperature of the liquid in the infusion channel is adjusted in the range of 5-60°C.

19. The chemical liquid delivery unit for rapid temperature control according to claim 1, characterized in that: The longitudinal section of the infusion tube is circular, or elliptical, or has an arc-shaped structure.

20. The chemical liquid delivery unit for rapid temperature control according to claim 1, characterized in that: The longitudinal section of the infusion tube is triangular or polygonal.

21. The chemical liquid delivery unit for rapid temperature control according to claim 1, characterized in that: The semiconductor electric heating module includes a plurality of semiconductor electric heating units, which are connected in series.

22. The chemical liquid delivery unit for rapid temperature control according to claim 1, characterized in that: The semiconductor electric heating module is a bismuth telluride heat conductive sheet.

23. A chemical mechanical planarization device comprising a polishing table, a polishing head, a dresser, and a polishing liquid delivery arm, characterized in that: The polishing liquid delivery arm includes a chemical liquid delivery unit according to any one of claims 1 to 22.

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