Vapor deposition source for vacuum vapor deposition apparatus, and vacuum vapor deposition method

Abstract

Provided is a vapor deposition source for a vacuum treatment apparatus capable of forming molten metal spread over a wide range and depositing a Cu film at a relatively high film deposition rate.　A vapor deposition boat 3 installed in a vacuum chamber 1 and a power source Ps for supplying electricity to the vapor deposition boat are provided. A vapor deposition material Em formed of copper is continuously or intermittently supplied to the vapor deposition boat having been heated to melt and evaporate the vapor deposition material to deposit a copper film on a vapor deposition object. The vapor deposition boat is composed of a ceramic or carbon and includes an additive metal material 7 including at least one metal element of titanium, zirconium, and vanadium, and is configured such that when the vapor deposition material is melted in the vapor deposition boat, the additive metal material is blended into the molten metal of the vapor deposition material.

Description

Vacuum deposition source for vacuum deposition device and vacuum deposition method

[0001] The present invention relates to a deposition source for a vacuum deposition apparatus and a vacuum deposition method, which include a crucible installed in a vacuum chamber and a heating means for heating the crucible, and which deposit a copper film on a deposition target by continuously or intermittently supplying a deposition material made of copper to the heated crucible and dissolving and evaporating the deposition material in the crucible.

[0002] In recent years, copper (Cu) films have been used in a wide variety of applications, such as electrodes or functional thin films for display devices, wiring for printed wiring boards, and thin films for controlling optical properties and molecular permeability. A vacuum deposition apparatus is used to form Cu films. The deposition source installed in the vacuum chamber of the vacuum deposition apparatus typically includes a graphite crucible and a heating means for induction heating the deposition material filled in the crucible, or a deposition boat and a power source for energizing the deposition boat (see, for example, Patent Documents 1 and 2). When forming Cu films on deposition targets using such vacuum deposition apparatuses, there is a strong demand for improvements in not only the quality of the Cu film but also the deposition rate (productivity).

[0003] To improve the film formation speed (i.e., to obtain a sufficiently fast film formation rate), the deposition material must melt on the surface of the crucible or deposition boat to form a molten metal that wets and spreads over a wide area. It is known that the wettability of the deposition material to the surface of the crucible or deposition boat depends on the reactivity of the deposition material with the surface of the crucible or deposition boat and the cleanliness of the surface of the crucible or deposition boat. Here, when depositing a Cu film using a deposition boat, a carbon boat or a ceramic boat sintered from a raw material containing boron nitride and titanium boride, which imparts electrical conductivity to the deposition boat, with approximately two additional materials added, is typically used. However, when attempting to deposit a Cu film using these boats, there is a problem in that Cu has poor wettability to the surface of the deposition boat, making it difficult to form a molten metal that wets and spreads over a wide area. This limits the improvement in the film formation speed.

[0004] JP 2011-23376 A JP 2018-176565 A

[0005] In view of the above, an object of the present invention is to provide a deposition source for a vacuum processing apparatus and a vacuum deposition method that can form a molten metal that wets and spreads over a wide area, thereby depositing a Cu film at a relatively high film formation rate.

[0006] In order to solve the above problems, the present invention provides a vapor deposition source for a vacuum vapor deposition apparatus, which includes a crucible installed in a vacuum chamber and a heating means for heating the crucible, and which continuously or intermittently supplies a vapor deposition material made of copper to the heated crucible and melts and evaporates the vapor deposition material in the crucible to vapor-deposit a copper film on a substrate. The vapor deposition source is characterized in that the crucible is made of ceramic or carbon and contains an additive metal material made of at least one metal element selected from the group consisting of titanium, zirconium, and vanadium, and is configured so that the additive metal material dissolves in the molten vapor deposition material when the vapor deposition material is melted in the crucible. In the present invention, "containing the additive metal material" means that the metal elements, such as titanium, zirconium, and vanadium, are not present in the crucible in an ionic or covalent bonded state (in other words, are in a state in which they dissolve in the molten Cu), and also includes a state in which the metal elements are attached to the surface of the crucible by, for example, spraying the additive metal material.

[0007] According to the present invention, when a current is passed through a crucible in a vacuum chamber under a vacuum atmosphere to inductively or resistively heat it to a predetermined temperature, and copper (Cu) is continuously or intermittently supplied to the crucible from above, the Cu melts in the crucible, and the molten Cu evaporates, depositing (forming) a Cu film. At this time, the additive metal material dissolved in the molten deposition material promotes wettability, and the molten Cu alloy containing the additive metal material spreads over a wide area within the crucible. As a result, the film formation rate on the deposition target can be dramatically improved.

[0008] Here, when the crucible is made of ceramics sintered from raw materials primarily containing boron nitride and titanium boride, which provides electrical conductivity to the deposition boat, and the crucible is heated to a high temperature (e.g., 1500°C) by applying power without any deposition material, elements contained in the crucible, such as boron, and impurities inevitably mixed in during crucible manufacture, such as oxygen, may be released as a gas phase. In the present invention, metal elements such as titanium, zirconium, and vanadium contained in the molten Cu alloy function as gettering materials for impurity gases, and the reaction products generated by the reaction with the impurity gases have a vapor pressure much lower than that of Cu (e.g., 1 / 10,000 or less) at the heating temperature of the crucible during deposition (e.g., in the range of 1400°C to 1700°C). This, combined with the suppression of the formation of compounds with a vapor pressure higher than that of Cu (e.g., boron oxide), effectively suppresses the occurrence of bumping. Furthermore, since the vapor pressure of the metal element itself is very low compared to Cu at the above heating temperature, the metal element or reaction products are not mixed into the deposited Cu film, and together with the occurrence of bumping being suppressed as much as possible, the quality of the Cu film can be maintained at a high level.

[0009] According to the inventors' extensive research, for example, when a strip-shaped additive metal material containing the above-mentioned metal elements is laid in a carbon or ceramic evaporation boat as a crucible with a predetermined thickness and the evaporation boat is heated to the above-mentioned temperature range by applying electricity to the evaporation boat in a vacuum chamber under a vacuum atmosphere, the additive metal material hardly melts. On the other hand, the inventors have discovered that when Cu is supplied as an evaporation material to the evaporation boat and melted, and the molten Cu comes into contact with the additive metal material, the additive metal material melts and dissolves into the molten metal without any particular change in the pressure in the vacuum chamber or the heating temperature of the evaporation boat (i.e., without heating to a temperature at which the additive metal material melts). Therefore, in the present invention, the additive metal material may be strip-shaped, linear, or granular, and may be placed in a crucible prior to evaporation onto the deposition target so that the evaporation material will come into contact with the molten metal when melted. According to this method, by using an existing crucible and pre-loading the crucible with strip-, wire-, or granular additive metal material, it is possible to easily form a molten metal that wets and spreads over a wide area during vapor deposition, and furthermore, it is possible to minimize the occurrence of bumping. Furthermore, if the metal elements are depleted through repeated vapor deposition, there is a risk that the molten metal will not wet and spread sufficiently and will become spherical. In such a case, however, simply by providing additional additive metal material in the crucible, it is possible to maintain the molten metal that wets and spreads over a wide area at all times, which is advantageous.

[0010] Incidentally, at the beginning of deposition, it is necessary to quickly bring the molten Cu into contact with the additive metal material. This requires, for example, passing a large current through the deposition boat, which generates Joule heat and heats the deposition boat to a high temperature. However, this approach may result in insufficient durability of the deposition boat. In the present invention, it is preferable to provide a copper material (e.g., a strip-shaped, wire-shaped copper material or a granular copper material having the same purity as the deposition material) in contact with the additive metal material in the crucible prior to deposition onto the substrate. For example, if the copper material is pre-placed in the crucible so that it heats as the crucible heats, passing a current through the deposition boat to heat it prior to supplying the deposition material will melt Cu, which has a relatively low melting point, first. The additive metal material will then dissolve into the molten Cu, forming a molten Cu alloy that spreads widely within the deposition boat. This advantageously eliminates the need to pass a large current through the deposition boat at the beginning of deposition. Then, after it is confirmed that the molten Cu alloy has spread over a wide area, the supply of evaporation material can be started, and stable deposition can be performed at a sufficiently fast film formation rate. Note that it is also possible to add a predetermined weight ratio of additive metal material to copper and mold it into a strip, wire, or granule shape, and then provide this.

[0011] In the present invention, the additive metal material is preferably titanium, and the crucible is preferably a deposition boat constructed by sintering raw materials primarily composed of boron nitride and titanium boride. According to the binary phase diagram of Cu and titanium (Ti), the weight ratio of Ti dissolved in the molten Cu is approximately 60 wt% at the above temperature range. Therefore, the weight of the additive metal material to be added can be determined based on the volume of the molten Cu during deposition. On the other hand, even if a larger weight of the additive metal material is added to prevent depletion of the metal elements that suppress bumping, no slag is generated in the molten Cu. Furthermore, although titanium has a higher vapor pressure than other metal elements in the above temperature range, it has been confirmed that there is no problem of Ti or its reaction products (e.g., titanium oxide) being mixed into the deposited Cu film, thereby degrading its quality. Furthermore, if Ti is selected as the metal element to be added, the reaction product generated by the reaction with Ti will be mainly titanium boride, which is a component contained in the deposition boat. This will cover the surface of the deposition boat onto which Cu is wetted and spreads, thereby further suppressing the generation of compounds with a higher vapor pressure than Cu (e.g., boron oxide), and further suppressing the occurrence of bumping.

[0012] Furthermore, to solve the above-mentioned problems, the vacuum deposition method of the present invention for depositing a copper film on a deposition target by heating a crucible placed in a vacuum chamber, continuously or intermittently supplying a deposition material made of copper into the crucible, and melting and evaporating the deposition material in the crucible, is characterized in that the crucible is made of ceramic or carbon, and prior to deposition on the deposition target, an additive metal material made of at least one metal element selected from titanium, zirconium, and vanadium is provided in the crucible so that the additive metal material dissolves in the molten metal when the deposition material melts. In this case, it is preferable to further provide a copper material in contact with the additive metal material.

[0013] 1A and 1B are cross-sectional views illustrating the configuration of an in-line vacuum deposition apparatus including a deposition source according to an embodiment of the present invention, wherein (a) is an enlarged plan view of the deposition source shown in FIG. 1 , and (b) is an enlarged cross-sectional view thereof. (a) is an enlarged plan view of a deposition source according to a modified example, and (b) is an enlarged cross-sectional view thereof.

[0014] Hereinafter, with reference to the drawings, an embodiment of a deposition source BS for a vacuum deposition apparatus and a vacuum deposition method of the present invention will be described using as an example a case in which a crucible is a deposition boat, a heating means is a power source that applies electricity to the deposition boat to heat it with Joule heat, and a deposition target is a rectangular glass substrate (hereinafter referred to as "substrate Sg"), and a wire-shaped deposition material Em made of copper (Cu) is continuously supplied and evaporated in a vacuum chamber in a vacuum atmosphere to deposit a Cu film on the film formation surface of the substrate Sg. In the following, terms indicating directions such as up and down are based on Figure 1, which shows the installation position of the deposition source BS.

[0015] 1, the in-line vacuum deposition apparatus Es includes a vacuum chamber 1, to which a vacuum pump is connected via an exhaust pipe (not shown), and the inside of the vacuum chamber 1 can be evacuated to a predetermined pressure (vacuum level) to form a vacuum atmosphere. In this case, the inside of the vacuum chamber 1 during deposition is 1×10 －２ Pa ~ 5 x 10 －４ The pressure in the vacuum chamber 1 is maintained within a pressure range of 100 Pa. A substrate transport device 2 is provided in the space above the vacuum chamber 1. The substrate transport device 2 has a carrier 21 that holds the substrate Sg with its lower surface, which serves as the film formation surface, open, and can transport the carrier 21, and therefore the substrate Sg, in one direction within the vacuum chamber 1 at a predetermined speed by a drive device not shown. As a known device can be used as the substrate transport device 2, further description will be omitted. An evaporation source BS of this embodiment is provided in the space below the vacuum chamber 1, facing the substrate Sg being transported in one direction.

[0016] Referring also to Figure 2, the deposition source BS includes a ceramic deposition boat 3. The deposition boat 3 includes a boat body 31 having a recess 31a with a flat inner bottom surface, and portions of the boat body 31 extending on both sides of the recess 31a in the longitudinal direction (the left-right direction in Figure 1) form electrode mounting plate portions 31b. The deposition boat 3 is made of a ceramic material containing boron nitride (BN) and titanium boride (TiB ２) as the main components, and raw materials containing these in a predetermined weight ratio are sintered. In this case, metal compounds such as aluminum nitride and tungsten carbide can also be added to impart wettability. Since known sintering methods can be used, further explanation will be omitted.

[0017] Two support bases 4, 4 made of an insulating material are installed on the inner surface of the lower wall 1 a of the vacuum chamber, spaced apart in the longitudinal direction. A pair of left and right electrode clamps 5, 5 made of a highly conductive metal such as copper are installed on the upper surfaces of the support bases 4, 4, respectively, and can detachably hold the evaporation boat 3 by pressing the electrode mounting plate portions 31 b of the boat body 31 from both longitudinal sides. When the evaporation boat 3 is held, the bottom surface of the boat body 31 is horizontal, and the evaporation boat 3 is installed at a predetermined height from the inner surface of the lower wall 1 a of the vacuum chamber.

[0018] A material supplying means 6 is provided within the vacuum chamber 1 for continuously supplying a wire-shaped deposition material Em to the recess 31 a. The material supplying means 6 has a housing 61 installed on the side of the deposition shield 11 disposed within the vacuum chamber 1 facing away from the deposition source BS. The housing 61 houses a feed roller 62, a motor 63 for driving the feed roller 62 to rotate, and a pair of upper and lower guide rollers 64, 64. A protruding pipe portion 61 a is formed on the side wall of the housing 61 located on the deposition source BS side, and the housing 61 is installed within the vacuum chamber 1 so that the protruding pipe portion 61 a passes through a through hole 11 a formed in the deposition shield 11. A guide pipe 65 of a predetermined length having a tip portion curved downward is attached to the tip of the protruding pipe portion 61 a to guide the wire-shaped deposition material Em toward the recess 31 a. The deposition material Em is Cu having a purity corresponding to the quality of the Cu film to be formed, formed into an outer diameter of 1 mm to 5 mm, and is wound in advance around the pay-out roller 62. Then, a tip Em1 of the wire-shaped deposition material Em wound around the pay-out roller 62 is pulled out and passed between a pair of upper and lower guide rollers 64, 64, and then inserted into the guide tube 65 from the space inside the protruding tube portion 61a. The wire-shaped deposition material Em is prepared by making the tip Em1 of the deposition material Em protruding from the guide tube 65 abut against the inner bottom surface of the recess 31a from above in the longitudinal central region of the recess 31a.

[0019] When a Cu film is deposited on the underside of the substrate Sg in a vacuum chamber 1 under a vacuum atmosphere using the vacuum evaporation method of this embodiment, a power source Ps installed outside the vacuum chamber 1 applies current between the electrode mounting plates 31b, 31b via the electrode clamps 5, 5. This heats the boat body 31 with Joule heat. The input power is set according to the film formation rate when depositing the Cu film on the underside of the substrate Sg. In this embodiment, the input power is set in the range of 9 kW to 14 kW so that the evaporation boat 3 can be heated to a temperature range of 1400°C to 1700°C, where a high film formation rate can be stably achieved. Note that at temperatures below 1400°C, the wire-shaped evaporation material Em cannot be efficiently melted to stably achieve a high film formation rate. However, at temperatures above 1700°C, the ambient temperature becomes too high and the wire-shaped evaporation material Em softens, potentially clogging the guide tube 65 and preventing smooth, continuous supply. When the deposition boat 3 reaches a predetermined temperature, the motor 63 rotates the feed roller 62 to feed out the wire-shaped deposition material Em. This melts the deposition material Em in the recess 31a, and the deposition material Em in the molten Cu evaporates, depositing a Cu film on the underside of the substrate Sg moving in one direction. The supply rate of the wire-shaped deposition material Em is set, for example, in the range of 7 g / min to 17 g / min depending on the film formation rate. Because Cu has poor wettability to the surface of the deposition boat 3, in order to achieve a sufficiently fast film formation rate, the deposition material Em must melt to form a molten metal that spreads over a relatively wide area. Furthermore, when the deposition boat 3 is heated to the above temperature range, impurities such as boron contained in the deposition boat 3 and oxygen inevitably contained during the production of the deposition boat 3 are released as a gas phase. Therefore, it is necessary to prevent bumping due to the release of impurity gases during deposition.

[0020] In this embodiment, an additive metal material 7 made of at least one metal element selected from titanium, zirconium, and vanadium is prepared in a strip shape having a thickness ranging from 0.5 mm to 2 mm. The additive metal material 7 is then provided on the inner bottom surface of the recess 31a prior to deposition so that the additive metal material 7 will come into contact with the molten metal when the deposition material Em is melted by heating the deposition boat 3 (the step of providing the additive metal material 7 in the crucible in the vacuum deposition method of this embodiment). Specifically, two sheets of the additive metal material 7 are provided on both longitudinal sides of the recess 31a near the inner bottom surface of the recess 31a that contacts the tip Em1 of the deposition material Em (see FIG. 2 ). In this case, the weight ratio of each metal element that can be dissolved in molten Cu within the above temperature range can be obtained from the binary phase diagram of Cu and each metal element, and the weight of the strip-shaped added metal material 7 to be laid can be set based on the volume of molten Cu in the recess 31 a during deposition. However, in order to prevent depletion of the metal elements when deposition on the substrate Sg is repeated over a long period of time, the added metal material 7 can also be provided in a greater weight.

[0021] According to the above, when the deposition boat 3 is heated in the vacuum chamber 1 under a vacuum atmosphere and Cu as the deposition material Em is continuously or intermittently supplied from above into the recess 31a of the deposition boat 3, Cu melts in the recess 31a, and the molten Cu evaporates, depositing (forming) a Cu film. At this time, the additive metal material 7 dissolved in the molten deposition material Em promotes wettability, and the molten Cu alloy containing the additive metal material 7 spreads over a wide area on the inner bottom surface of the recess 31a of the deposition boat 3. This dramatically improves the film formation rate. Since it is only necessary to provide the additive metal material 7 on the inner bottom surface of the recess 31a, an existing deposition boat 3 can be used. Furthermore, if the metal element becomes depleted, simply providing additional additive metal material 7 in the recess 31a of the deposition boat 3 can constantly maintain the molten metal spreading over a wide area. Furthermore, even if impurities such as boron contained in the deposition boat 3 or oxygen inevitably mixed in are released into the molten metal as a gas phase by heating, these impurity gases react with the metal elements functioning as gettering materials. The reaction products generated by the reaction with the impurity gases have a much lower vapor pressure than Cu as the deposition material Em within the above temperature range. This, combined with the suppression of the formation of compounds with a higher vapor pressure than Cu (e.g., boron oxide), minimizes the occurrence of bumping. Furthermore, metal elements and reaction products are not mixed into the deposited Cu film, and the suppression of bumping minimizes the quality of the Cu film.

[0022] Furthermore, even when titanium (Ti) was selected as the additive metal material and a larger weight of the additive metal material 7 was added to prevent Ti depletion, no slag was observed in the molten Cu. Furthermore, although titanium as a metallic element has a higher vapor pressure than other metallic elements in the above temperature range, it was confirmed that there was no problem of Ti or its reaction products (titanium oxide, etc.) being mixed into the deposited Cu film and degrading its quality. Furthermore, the reaction products produced by the reaction with Ti are primarily titanium boride, a component of the deposition boat 3. This titanium boride covers the inner bottom surface of the recess 31 a, which wets and spreads as a Cu alloy, thereby further suppressing the generation of compounds with a higher vapor pressure than Cu (e.g., boron oxide), thereby further suppressing the occurrence of bumping.

[0023] In order to confirm the above effects, the following experiment was carried out using the vacuum deposition apparatus Es shown in Figure 1. That is, a square stainless steel substrate with sides of 200 mm was attached to a position directly above and a predetermined distance from the deposition boat 3 in the vacuum chamber 1, and Cu was continuously deposited for 1 hour under the following deposition conditions, and the deposition rate and the amount of bumping were confirmed. ２ The mixture was sintered with AlN and WC as additives in a predetermined weight ratio (external dimensions: 38 mm x 150 mm x thickness 9 mm).

[0024] The deposition conditions were as follows: the power input to the deposition boat was 14 kW (the heating temperature of the deposition boat was approximately 1600° C.); the Cu deposition material Em had an outer diameter of 2 mm and was fed from the feed roller 61 at a feed rate of 20 g / min; and the pressure inside the vacuum chamber 1 during deposition was 5×10 ー３ Pa. In an inventive experiment, three kinds of additive metal materials 7, namely, titanium (Ti), zirconium (Zr), and vanadium (V), each weighing 1.8 g, were prepared. Prior to deposition, each additive metal material 7 was placed in the recess 31 a of the deposition boat 3 so as to come into contact with the molten metal of the deposition material Em when it was melted. As a comparative experiment, deposition was performed under the same deposition conditions as above, without placing the additive metal material 7.

[0025] Table 1 shows the measurement results of the maximum film formation rate and the number of bumping adhesions when the deposition thickness was 0.5 mm or more on the stainless steel substrate. The number of bumping adhesions was measured using a 10x magnifying glass. According to this, in the comparative experiment, more than 1,000 bumping adhesions were confirmed. In contrast, in the inventive experiment, it was confirmed that the number of bumping adhesions could be dramatically reduced for all additive metal materials 7. Furthermore, when the deposition material Em was supplied to the recess 31a of the heated deposition boat 3, the Cu wettability on the bottom surface of the recess 31a was visually confirmed. In the comparative experiment, the deposition material Em did not form a spherical shape at the bottom surface of the recess 31a where the tip Em1 of the deposition material Em contacted, whereas in the inventive experiment, the deposition material Em wetted and spread over almost the entire bottom surface of the recess 31a for all additive metal materials 7. This confirmed that a film formation rate approximately five times higher than that of the comparative experiment was obtained. Furthermore, when the contamination of the Cu film with the metal elements Ti and Zr was confirmed by XRF, it was confirmed that the amounts of both elements were below the detection limit.

[0026] Although the above describes an embodiment of the present invention, various modifications are possible without departing from the scope of the technical concept of the present invention. In the above embodiment, a strip-shaped additive metal material 7 is laid in the recess 31a of the evaporation boat 3 prior to evaporation onto the substrate Sg so that at least one of titanium, zirconium, and vanadium metal elements is contained in the molten metal when the evaporation material Em is melted in the evaporation boat 3. However, this is not limited to this. For example, the additive metal material 7 made of a metal element may be sprayed in advance onto a predetermined area, including the inner bottom surface of the recess 31a where the tip Em1 of the evaporation material Em contacts. The additive metal material 7 may also be wire-shaped or granular, shaped to a predetermined wire diameter or particle size. Furthermore, in the above embodiment, a wire-shaped evaporation material Em is fed to the evaporation boat 3. However, this is not limited to this. For example, the present invention can be widely applied to a system in which the evaporation material Em is granular and periodically (intermittently) added to a crucible. Furthermore, in the above embodiment, the crucible is described as an evaporation boat made of ceramics, but the present invention is not limited to this, and can also be applied to a graphite crucible (particularly one whose inner surface is coated with PBN) that is heated by induction heating.

[0027] Next, a modified evaporation source BS for a vacuum evaporation apparatus will be described with reference to Figures 3(a) and (b), in which the same components and parts as those in the above embodiment are designated by the same reference numerals. In this evaporation source BS, a copper material 8 is laid in contact with an additive metal material 7 in a recess 31a of an evaporation boat 3 prior to evaporation. The copper material 8 is a strip-shaped, wire-shaped, or granular copper material having the same purity as the evaporation material Em. Specifically, the copper material 8 is prepared by forming copper having the same purity as the evaporation material Em into a strip-shaped material having a thickness ranging from 1 mm to 3 mm, and the additive metal material 7 is prepared by forming a strip-shaped material having a thickness ranging from 0.5 mm to 2 mm and composed of at least one metal element selected from titanium, zirconium, and vanadium, as described above. The copper material 8 and the additive metal material 7 are arranged around the bottom of the recess 31a where the tip Em1 of the evaporation material Em contacts, so that the copper material 8 and the additive metal material 7 are sequentially stacked. The weight ratio of the additive metal material 7 to the copper material 8 at this time is set based on the volume of the molten Cu in the recess 31a during vapor deposition, as in the above embodiment, and is set to, for example, 1 / 5.

[0028] During deposition, prior to supplying the deposition material Em to the deposition boat 3, an electric current is passed through the deposition boat 3 to heat it. This causes the copper material 8, which has a relatively low melting point, to melt first. The additive metal material 7 dissolves into the resulting molten Cu, forming a molten Cu alloy that spreads over a wide area on the bottom surface of the recess 31a in the deposition boat 3. This eliminates the need to pass a large electric current through the deposition boat 3 at the beginning of deposition in order to quickly bring the molten Cu into contact with the additive metal material 7. After confirming that the molten Cu alloy has spread over a wide area, the supply of the deposition material Em can be started, allowing for stable deposition at a sufficiently fast film formation rate. Alternatively, a strip, wire, or granular shape of copper with a predetermined weight ratio of additive metal material added may be prepared in advance and laid down.

[0029] BS: deposition source for vacuum deposition device; Em: deposition material (copper wire); Es: vacuum deposition device; Sg: substrate (substrate to be deposited); 1: vacuum chamber; 3: deposition boat (crucible); 7: additive metal material; 8: copper material.

Claims

1. A deposition source for a vacuum deposition device, comprising a crucible placed in a vacuum chamber and a heating means for heating the crucible, for depositing a copper film on an object to be deposited by continuously or intermittently supplying a copper deposition material to the heated crucible and melting and evaporating the deposition material in the crucible, characterized in that the crucible is made of ceramics or carbon and contains an additive metal material made of at least one of titanium, zirconium, and vanadium, so that when the deposition material is melted in the crucible, the additive metal material dissolves in the molten deposition material.

2. A deposition source for a vacuum deposition apparatus as described in claim 1, characterized in that the additive metal material is in the form of a strip, wire or particle, and is placed in a crucible prior to deposition onto an object to be deposited so that it comes into contact with the molten metal when the deposition material melts.

3. The evaporation source for a vacuum evaporation apparatus according to claim 2, wherein a copper material is placed in the crucible in contact with the additive metal material prior to evaporation onto the object to be evaporated.

4. An evaporation source for a vacuum evaporation device according to any one of claims 1 to 3, characterized in that the additive metal material is titanium, and the crucible is an evaporation boat made by sintering raw materials whose main components are boron nitride and titanium boride.

5. A vacuum deposition method for depositing a copper film on an object to be deposited by heating a crucible placed in a vacuum chamber, continuously or intermittently supplying a deposition material made of copper into the crucible, and melting and evaporating the deposition material in the crucible, the method comprising: using a crucible made of ceramic or carbon; and providing an additive metal material made of at least one metal element selected from titanium, zirconium, and vanadium in the crucible prior to deposition on the object to be deposited; and allowing the additive metal material to dissolve in the molten metal when the deposition material is melted.

6. A vacuum deposition method according to claim 5, wherein said step includes providing a copper material in said crucible in contact with said additive metal material.

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