Chemical vapor deposition apparatus

Abstract

The present invention relates to a chemical vapor deposition apparatus and, more specifically, to a chemical vapor deposition apparatus which levitates and rotates a susceptor on which a substrate is mounted, thereby uniformly supplying process gas or the like to the substrate.

Description

chemical vapor deposition device

[0001] The present invention relates to a chemical vapor deposition apparatus, and more specifically, to a chemical vapor deposition apparatus that floats and rotates a susceptor on which a substrate is mounted so that process gases, etc. can be uniformly supplied to the substrate.

[0002] Typically, when manufacturing semiconductor devices, various processes may be performed in a substrate processing device that includes a vacuum chamber. Such a substrate processing device may be configured as a chemical vapor deposition device, for example.

[0003] These chemical vapor deposition devices can perform processes such as loading a substrate into a chamber and depositing a thin film on the substrate.

[0004] When performing substrate processing in this manner, it is crucial to ensure that process gases are supplied evenly across the substrate's upper surface. To achieve this, a technology is being developed that rotates the susceptor on which the substrate is mounted.

[0005] However, in cases where the susceptor is to be rotated in this way, a complex driving device is required if it is rotated by a mechanical device, and furthermore, factors such as particles may act.

[0006] Additionally, a technology has recently been developed that supplies a fluid gas to the underside of a susceptor to float and rotate it. However, these conventional devices require complex components to supply the fluid gas to float and rotate the susceptor.

[0007] In order to solve the above-mentioned problems, the present invention aims to provide a chemical vapor deposition apparatus having a susceptor capable of more effectively floating and rotating a susceptor on which a substrate is mounted by a simple configuration.

[0008] The above object of the present invention can be achieved by a chemical vapor deposition apparatus characterized by comprising a chamber, a lower plate provided inside the chamber and having a concave portion, a susceptor on which a substrate is placed and inserted into the concave portion, and which rotates while floating by a floating gas supplied through the concave portion, and a floating gas supply path penetrating the lower plate and connected to the concave portion, and supplying a floating gas to the lower surface of the susceptor.

[0009] Here, a floating rotation means capable of rotating while floating by the floating gas may be provided on the lower surface of the susceptor.

[0010] In addition, when the floating gas is supplied to the lower surface of the susceptor, a gas storage space that generates floating force in the susceptor by the floating gas can be provided.

[0011] Additionally, a step portion may be formed along the lower edge of the susceptor.

[0012] Meanwhile, the gas storage space formed on the lower surface of the susceptor may be formed so that its height decreases from the central portion toward the step portion.

[0013] Furthermore, a plurality of grooves that can rotate the susceptor by the floating gas can be formed on the inner surface of the step portion.

[0014] Additionally, a plurality of protrusions may be formed on the inner surface of the above-mentioned single-step portion.

[0015] Meanwhile, a plurality of through holes can be formed in the above-mentioned step portion.

[0016] Furthermore, the gas storage space may be provided with a plurality of wing parts capable of rotating the susceptor by the floating gas.

[0017] Additionally, the plurality of wing portions may be arranged symmetrically around the central portion of the lower surface of the susceptor.

[0018] Furthermore, each of the plurality of wing portions may be bent along a curve to connect the central portion of the lower surface of the susceptor and the step portion.

[0019] According to the present invention having the above-described configuration, a floating rotation means is provided on the lower surface of the susceptor, and the susceptor can float and rotate by floating gas supplied from the lower plate.

[0020] In addition, according to the present invention, the configuration of a chemical vapor deposition device can be simplified by omitting a complex mechanical driving device and floating and rotating a susceptor by a floating gas.

[0021] FIG. 1 is a side cross-sectional view showing the internal configuration of a chemical vapor deposition apparatus according to one embodiment of the present invention;

[0022] Figure 2 is a side view of the upper cover and lower plate showing the configuration of the floating gas supply path.

[0023] Figures 3 and 4 are drawings showing a susceptor according to one embodiment;

[0024] FIG. 5 is a drawing showing a susceptor according to another embodiment;

[0025] Figures 6 and 7 are drawings showing a susceptor according to another embodiment;

[0026] Fig. 8 is a perspective view showing the home portion in Fig. 6;

[0027] FIGS. 9 and 10 are drawings illustrating a susceptor according to another embodiment.

[0028] Hereinafter, the structure of a chemical vapor deposition apparatus according to an embodiment of the present invention will be examined in detail with reference to the drawings.

[0029] FIG. 1 is a cross-sectional side view illustrating the internal configuration of a chemical vapor deposition apparatus (1000) according to one embodiment of the present invention.

[0030] Referring to FIG. 1, the chemical vapor deposition device (1000) may include a chamber (100), a lower plate (320) provided inside the chamber (100) and having a concave portion (322) formed therein, a susceptor (324) on which a substrate (W) is mounted and inserted into the concave portion (322), and which rotates while floating by a floating gas supplied through the concave portion (322), and a floating gas supply path (350) that penetrates the lower plate (320) and is connected to the concave portion (322) and supplies a floating gas to the lower surface of the susceptor (324).

[0031] A receiving space (110) is provided inside the chamber (100), and various components can be provided therein.

[0032] Additionally, a gas supply unit (200) may be connected to one side of the chamber (100). The gas supply unit (200) may supply various process gases, purge gases, or cleaning gases toward the processing space (312).

[0033] Here, an upper cover (310) is provided on the upper portion of the lower plate (320), and the processing space (312) can be defined as a space between the lower plate (320) and the upper cover (310). The upper cover (310) may have an appropriate shape or structure that can form the processing space (312) between itself and the lower plate (320), and is not particularly limited thereto. In addition, the upper cover (310) may be manufactured as a separate member from the lower plate (320) and then assembled, or the upper cover (310) may be formed integrally with the lower plate (320).

[0034] Meanwhile, the gas supply unit (200) may be provided with a gas inlet pipe (220) that extends from the outside of the chamber (100) to the inside of the chamber (100) and is connected to the processing space (312). A supply port (210) through which various gases are supplied may be formed in the gas inlet pipe (220) located outside the chamber (100).

[0035] In this case, a process gas or the like is supplied from the side of the processing space (312) by the gas supply unit (200) to induce a laminar flow of gas inside the processing space (312) so that a thin film can be grown on the upper surface of the substrate (W).

[0036] Meanwhile, the process temperature for the substrate (W) may correspond to a high temperature. Accordingly, the upper cover (310) and the lower plate (320) that partition the processing space (312) may be made of quartz or the like, but are not limited thereto.

[0037] In addition, a concave portion (322) is formed in the lower plate (320), and a susceptor (324) can be inserted into the concave portion (322). In this case, the substrate (W) can be placed on the upper surface of the susceptor (324).

[0038] Meanwhile, in the above-described configuration, the susceptor (324) can be positioned so as to float and rotate inside the concave portion (322). During a process for the substrate (W), the substrate (W) can be rotated by the rotation of the susceptor (324), so that the process gas supplied from the side can react uniformly on the entire surface of the substrate (W). The floating and rotating structure of the susceptor (324) will be examined in detail later.

[0039] A gas exhaust pipe (400) through which gas of the processing space (312) is exhausted may be connected to the other side of the processing space (312). The gas exhaust pipe (400) may extend to the outside of the chamber (100) to exhaust gas of the processing space (312) to the outside of the chamber (100).

[0040] Meanwhile, the chemical vapor deposition device (1000) may be equipped with a heater (330) for heating the substrate (W) or susceptor (324) to a process temperature.

[0041] The heater (330) may be provided at the lower portion of the lower plate (320). In addition, it may be said that the heater (330) is arranged at the lower portion of the substrate (W) or the susceptor (324) at the lower portion of the lower plate (320). As a result, the substrate (W) or the susceptor (324) can be heated more effectively by the heater (330).

[0042] As described above, the susceptor (324) can rotate while floating inside the concave portion (322) by the floating gas supplied through the concave portion (322). In order to supply the floating gas, a floating gas supply path (350) can pass through the lower plate (320) and be connected to the concave portion (322). The floating gas can be composed of, for example, an inert gas such as Ar, but is not limited thereto.

[0043] Figure 2 is a side view of the upper cover (310) and lower plate (320) showing the configuration of the floating gas supply path (350).

[0044] Referring to (A) of FIG. 2, the floating gas supply path (350) penetrates the lower plate (320) and is connected to the concave portion (322), so that floating gas can be supplied to the lower portion of the susceptor (324) through the bottom of the concave portion (322).

[0045] FIG. 2 (B) illustrates a floating gas supply path (350) according to another embodiment. The floating gas supply path (350) according to this embodiment may be branched into a plurality of sub-paths (352, 354) and connected to the concave portion (322). Accordingly, floating gas may be supplied toward the lower portion of the susceptor (324) through the plurality of sub-paths (352, 354) to float and rotate the susceptor (324).

[0046] In the chemical vapor deposition device (1000) according to the present invention, any one of the floating gas supply paths (350) selected from (A) and (B) of the above-described FIG. 2 may be employed, and furthermore, it may be configured by being appropriately modified.

[0047] Meanwhile, the susceptor (324) may be provided with a floating rotation means that can rotate while floating on the floating gas on its lower surface.

[0048] Figures 3 and 4 illustrate a susceptor (324) according to one embodiment. Figure 3 is a side cross-sectional view of the susceptor (324), Figure 4 (A) is a bottom view of the susceptor (324), Figure 4 (B) is a cross-sectional view taken along line BB' in Figure 4 (A), and Figure 4 (C) is a bottom perspective view of the susceptor (324).

[0049] Referring to FIGS. 3 and 4, a gas storage space (3242) can be formed on the lower surface of the susceptor (324).

[0050] Specifically, a step portion (3240) is formed along the lower edge of the susceptor (324), and the inner side of the step portion (3240) is sunken toward the upper side to form the gas storage space (3242).

[0051] In this case, the floating gas supplied from the concave portion (322) is first supplied to the gas storage space (3242) formed on the lower surface of the susceptor (324) and can generate floating force in the susceptor (324) while remaining in the gas storage space (3242).

[0052] In addition, the lower surface of the susceptor (324) may be provided with a plurality of wing parts (3250A, 3250B, 3250C, 3250D) that rotate the susceptor (324) by the floating gas.

[0053] The above plurality of wing parts (3250A, 3250B, 3250C, 3250D) are shown as four in the drawing, but are not limited thereto and may be less than four or more than four, and the number may be appropriately modified.

[0054] Meanwhile, the floating gas supplied through the concave portion (322) floats the susceptor (324), and further, the floating gas provides rotational force to the plurality of wing portions (3250A, 3250B, 3250C, 3250D) to rotate the susceptor (324). To this end, the aforementioned floating gas supply path (350) connected to the concave portion (322) may be configured to supply the floating gas along the circumferential direction of the susceptor (324) to generate rotational force.

[0055] The above plurality of wing parts (3250A, 3250B, 3250C, 3250D) can be formed symmetrically centered around the central portion of the lower surface (3244) of the susceptor (324).

[0056] In this case, the plurality of wing parts (3250A, 3250B, 3250C, 3250D) may have a shape in which the thickness thereof gradually becomes thinner from one side (B) toward the other side (B') as illustrated in (B) of FIG. 4. In this shape, the floating gas supplied through the concave portion (322) may be supplied toward the thick side (B) of the wing parts (3250A, 3250B, 3250C, 3250D). As a result, the rotational force for rotating the wing parts (3250A, 3250B, 3250C, 3250D) by the floating gas can be more effectively generated.

[0057] Accordingly, it can be said that the floating rotation means of the susceptor (324) includes a step portion (3240), a gas storage space (3242), and a plurality of wing portions (3250A, 3250B, 3250C, 3250D) provided at the lower portion of the susceptor (324).

[0058] Meanwhile, Fig. 5 illustrates a susceptor (324') according to another embodiment. Fig. 5 (A) is a bottom view of the susceptor (324'), and Fig. 5 (B) is a bottom perspective view of the susceptor (324').

[0059] Referring to FIG. 5, the susceptor (324') according to the present embodiment may have a gas storage space (3242) and a plurality of wing parts (3260A, 3260B, 3260C, 3260D) on its lower surface (3244).

[0060] In this case, the plurality of wing parts (3260A, 3260B, 3260C, 3260D) may be bent and extended from the center of the lower surface (3244) of the susceptor (324') toward the step part (3240).

[0061] As illustrated in FIG. 5, each of the plurality of wing portions (3260A, 3260B, 3260C, 3260D) may be bent along a curve to connect the central portion of the lower surface (3244) of the susceptor (324') and the step portion (3240). Here, the shapes of the plurality of wing portions (3260A, 3260B, 3260C, 3260D) are not specifically limited.

[0062] The above plurality of wing parts (3260A, 3260B, 3260C, 3260D) can be fixed using a pin (not shown) made of graphite or the like in the central portion. Due to the curved structure of the above plurality of wing parts (3260A, 3260B, 3260C, 3260D), friction loss with floating gas can be reduced and the susceptor (324') can be allowed to rotate uniformly.

[0063] Meanwhile, FIGS. 6 and 7 illustrate a susceptor (324”) according to another embodiment. FIG. 6 is a bottom view of the susceptor (324”), and FIG. 7 is a side cross-sectional view taken along line 'Ⅶ-Ⅶ' of FIG. 6.

[0064] Referring to FIGS. 6 and 7, in the case of the susceptor (324”) according to the present embodiment, the gas storage space (3272) formed on the lower surface (3277) may be formed so that its height decreases from the central portion toward the step portion (3270). Accordingly, as shown by the arrow in FIG. 7, the floating gas supplied from the lower central portion of the susceptor (324”) may be distributed from the gas storage space (3272) toward the step portion (3270). In this case, the floating gas supply path (350) described above may have a configuration such as (A) of FIG. 2.

[0065] Accordingly, the floating gas supplied from the lower part of the central portion of the susceptor (324”) can provide strong floating force to the susceptor (324”) while being distributed from the central portion of the gas storage space (3272) toward the edge.

[0066] Meanwhile, a plurality of grooves (3278) that can rotate the susceptor (324”) by the floating gas can be formed on the inner surface of the step portion (3270).

[0067] The above groove portion (3278) may be composed of an inclined portion (3278A) and a vertical portion (3278B), and as described above, the floating gas dispersed toward the lower edge of the susceptor (324”) may apply force to the vertical portion (3278B) of the groove portion (3278) to provide rotational force to the susceptor (324”).

[0068] That is, when the plurality of grooves (3278) are formed on the inner surface of the step portion (3270), when the floating gas collides with the grooves (3278), a force is instantaneously concentrated to generate a strong rotational force on the susceptor (324”).

[0069] In this case, if the groove (3278) is too large, the fluid resistance may increase relatively too much, which may be detrimental to the rotation of the susceptor (324”), and conversely, if the groove (3278) is too small, sufficient rotational force may not be transmitted by the floating gas.

[0070] Figure 8 is a perspective view illustrating the above home portion (3278).

[0071] Referring to FIG. 8, the length of the inclined portion (3278A) and the vertical portion (3278B) of the groove portion (3278) can be determined according to the size of the susceptor (324”).

[0072] For example, when the diameter of the susceptor (324”) is 198.5 mm, the depth (D) of the groove (3278) can be formed to be about 2 to 5 mm, the width (W) to be about 1 to 3 mm, and the length (L) to be about 3 to 7 mm.

[0073] Meanwhile, if the grooves (3278) are too close together on the inner surface of the step portion (3270), the flow of floating gas may be affected, which may actually reduce the rotational force. Conversely, if the gap between the grooves (3278) is too wide, it may be difficult to obtain sufficient rotational force.

[0074] Therefore, it is preferable that the spacing between the grooves (3278) be set to approximately 10 to 20% of the circumference of the susceptor (324”). For example, when the circumference of the susceptor (324”) is approximately 623 mm, the spacing between the grooves (3278) is preferably approximately 6 to 12 mm.

[0075] According to the inventor's experiment, in the case of the embodiment having the groove (3278), the rotational force of the floating gas can be transmitted to the susceptor (324") more efficiently than in the comparative example without the groove (3278), thereby increasing the rotational force of the susceptor (324").

[0076] For example, it was found that the device according to the experimental example had a rotational power improved by approximately 30 to 50% or more compared to the comparative example.

[0077] In addition, the device according to the experimental example enabled uniform rotation of the susceptor (324”) by assisting the rotational movement of the susceptor (324”) even when the injection of the floating gas was not uniform.

[0078] Furthermore, compared to the comparative example, the amount of gas required to obtain the same rotational force of the susceptor (324”) was reduced in the embodiment, thereby improving the overall system efficiency.

[0079] In addition, a plurality of through holes (3276) may be formed in the step portion (3270) in order to control the floating force and rotational force of the susceptor (324”). That is, some of the floating gas supplied to the gas storage space (3272) may be discharged to the outside of the susceptor (324”) through the through holes (3276). Therefore, the floating force and rotational force of the susceptor (324”) may be controlled by controlling the number and diameter of the through holes (3276).

[0080] Meanwhile, FIGS. 9 and 10 are drawings of a susceptor (324''') according to another embodiment. FIG. 9 is a bottom view of the susceptor (324'''), and FIG. 10 is a side cross-sectional view taken along the line 'Ⅹ-Ⅹ' of FIG. 9.

[0081] Referring to FIGS. 9 and 10, in the case of the susceptor (324''') according to the present embodiment, a plurality of protrusions (3279) may be formed on the inner surface of the step portion (3270).

[0082] The above protrusion (3279) may have a shape that protrudes toward the center from the inner surface of the step portion (3270) of the susceptor (324''').

[0083] In this way, if the protrusion (3279) is provided on the inner surface of the step portion (3270) of the susceptor (324'''), the rotational force of the susceptor (324''') can be maximized as the floating gas continuously hits each protrusion (3279).

[0084] In addition, the floating gas can apply a constant rotational force to the susceptor (324''') at the point where the protrusion (3279) is formed, thereby inducing stable rotation of the susceptor (324''').

[0085] While the present invention has been described above with reference to preferred embodiments, those skilled in the art will appreciate that various modifications and variations can be made to the present invention without departing from the spirit and scope of the invention as defined in the claims below. Therefore, any modified implementation that fundamentally includes the elements of the claims should be considered within the technical scope of the present invention.

[0086] According to the present invention, a floating rotation means is provided on the lower surface of the susceptor, and the susceptor can float and rotate by floating gas supplied from the lower plate.

[0087] In addition, according to the present invention, the configuration of a chemical vapor deposition device can be simplified by omitting a complex mechanical driving device and floating and rotating a susceptor by a floating gas.

Claims

1. Chamber; A lower plate provided inside the chamber and having a concave portion formed therein; A susceptor that is inserted into the concave portion while the substrate is seated and rotates while floating by a floating gas supplied through the concave portion; and A chemical vapor deposition device characterized by comprising a floating gas supply path that penetrates the lower plate and is connected to the concave portion and supplies floating gas to the lower surface of the susceptor.

2. In paragraph 1, On the lower side of the above susceptor A chemical vapor deposition device characterized by having a floating rotation means that can rotate while floating by the floating gas.

3. In paragraph 2, On the lower side of the above susceptor A chemical vapor deposition device characterized in that a gas storage space is provided that generates a floating force in the susceptor by the floating gas when the floating gas is supplied.

4. In paragraph 3, A chemical vapor deposition device characterized in that a step portion is formed along the lower edge of the susceptor.

5. In paragraph 4, A chemical vapor deposition device characterized in that the gas storage space formed on the lower surface of the susceptor is formed so that its height decreases from the central portion toward the step portion.

6. In paragraph 4, On the inner side of the above-mentioned chin A chemical vapor deposition device characterized in that a plurality of grooves are formed that can rotate the susceptor by the floating gas.

7. In paragraph 4, On the inner side of the above-mentioned chin A chemical vapor deposition apparatus characterized in that a plurality of protrusions are formed.

8. In paragraph 4, In the above mentioned section A chemical vapor deposition device characterized in that a plurality of through holes are formed.

9. In paragraph 4, In the above gas storage space A chemical vapor deposition device characterized by having a plurality of wing parts capable of rotating the susceptor by the floating gas.

10. In paragraph 9, The above multiple wing parts A chemical vapor deposition device characterized in that the susceptor is arranged symmetrically around the central portion of the lower surface.

11. In paragraph 10, A chemical vapor deposition apparatus characterized in that each of the plurality of wing parts is bent along a curve to connect the central portion of the lower surface of the susceptor and the step portion.

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