Radio frequency front-end module and radio frequency chip

Abstract

The present invention relates to the technical field of wireless communications. Disclosed in the present invention is a radio frequency front-end module, comprising a signal input end, an input matching circuit, an amplification circuit, an output matching circuit, and a signal output end which are electrically connected in sequence. The radio frequency front-end module further comprises a bias circuit, wherein a first end of the bias circuit is used for connecting to a power supply, a second end of the bias circuit is used for connecting to an external logic control circuit, and a third end of the bias circuit is used for outputting a bias current to an input end of the amplification circuit; the external logic control circuit is used for controlling on-off of the amplification circuit; and the bias circuit comprises a current mirror circuit, a first transistor , a second transistor , a third transistor , a first resistor, a second resistor, and a third resistor. The present invention can improve the IIP3 performance of the entire radio frequency front-end module.

Description

Radio frequency front-end module and radio frequency chip TECHNICAL FIELD

[0001] The present application relates to the field of wireless communication technology, in particular to a radio frequency front-end module and a radio frequency chip. BACKGROUND

[0002] Mobile communication terminals have become more and more common in today's society for wireless communication, and their increasingly powerful processing capabilities have enabled mobile communication terminals to gradually evolve into mobile multimedia centers. In the mobile communication system, there are currently two main technical routes, cellular mobile communication and WIFI. These two systems are still evolving, and their common feature is that the communication bandwidth is larger and the transmission rate is higher to meet the growing use needs of users. In mobile communication terminals, the radio frequency signal is amplified by a power amplifier and transmitted through an antenna.

[0003] With the development of communication technology, in the radio frequency transceiver chip, the radio frequency front-end of the mobile terminal is a key device for realizing signal transmission and reception, and with the multi-mode and multi-standard of communication, the radio frequency front-end bears the function of multi-standard and multi-mode signal transmission and reception. The requirements for the radio frequency amplifier of the radio frequency front-end are also increasing, such as higher frequency, larger bandwidth, higher linearity, wider operating voltage range, etc. For example, for the WIFI system, the radio frequency amplifier in the AP / router usually operates at a voltage of about 5V, while the radio frequency amplifier in the station device (such as a mobile phone and a tablet computer) usually operates at a voltage of about 3.3V.

[0004] However, conventional radio frequency amplifiers can only work in a relatively narrow voltage range and cannot be applied to different devices at the same time; radio frequency amplifier suppliers often need to develop different products for different operating voltages, which increases the product development cost and cycle. SUMMARY

[0005] The purpose of the embodiments of the present application is to provide a radio frequency front-end module that outputs high and low levels through a bias circuit, to solve the problems of poor voltage adjustment effect, high cost, and small application range of the existing radio frequency front-end module.

[0006] To solve the above technical problems, in a first aspect, the embodiments of the present application provide a radio frequency front-end module, which comprises a signal input end, an input matching circuit, an amplification circuit, an output matching circuit and a signal output end connected in sequence; characterized in that the radio frequency front-end module further comprises a bias circuit, a first end of the bias circuit is used to connect a power supply, a second end of the bias circuit is used to connect an external logic control circuit, a third end of the bias circuit is used to output a bias current to an input end of the amplification circuit, and the external logic control circuit is used to control the on-off of the amplification circuit.

[0007] The bias circuit comprises a current mirror circuit, a first transistor, a second transistor, a third transistor, a first resistor, a second resistor and a third resistor;

[0008] The base of the first transistor is the second end of the bias circuit, the emitter of the first transistor is grounded, and the collector of the first transistor is connected to the first end of the second resistor and the first end of the third resistor, respectively; the second end of the second resistor is the first end of the bias circuit and is connected to the first end of the first resistor, the second end of the first resistor is connected to the emitter of the second transistor, the second end of the third resistor is connected to the base of the second transistor, the collector of the second transistor is connected to the collector of the third transistor, the collector of the third transistor is also connected to the base of the third transistor, and the emitter of the third transistor is connected to the input end of the current mirror circuit, and the output end of the current mirror circuit is the third end of the bias circuit.

[0009] Preferably, the radio frequency front-end module further comprises a fourth resistor, and the base of the first transistor is connected to the external logic control circuit through the fourth resistor in series.

[0010] Preferably, the current mirror circuit comprises a current mirror unit and a voltage adjustment unit; the first end of the voltage adjustment unit is the input end of the current mirror circuit, the second end of the voltage adjustment unit is used for connecting an external linear voltage stabilizing power supply, the third end of the voltage adjustment unit is connected to the input end of the current mirror unit, and the output end of the current mirror unit is the output end of the current mirror circuit; the voltage adjustment unit is used for adjusting the bias voltage output by the third transistor, and the current mirror unit is used for converting the bias voltage into a corresponding bias current for output.

[0011] Preferably, the voltage adjustment unit comprises a fourth transistor, a fifth resistor and a sixth resistor;

[0012] The base of the fourth transistor is the first end of the voltage adjustment unit, the collector of the fourth transistor is the second end of the voltage adjustment unit and is connected to the first end of the fifth resistor, the emitter of the fourth transistor is connected to the first end of the sixth resistor, and the second end of the sixth resistor is the third end of the voltage adjustment unit and is connected to the second end of the fifth resistor.

[0013] Preferably, the current mirror unit comprises a fifth transistor, a sixth transistor, a seventh transistor and a seventh resistor;

[0014] The collector of the fifth transistor is used as an input terminal of the current mirror unit, the collector of the fifth transistor is also connected to the base of the fifth transistor and the base of the seventh transistor respectively, the emitter of the fifth transistor is connected to the collector of the sixth transistor and the base of the sixth transistor, and the emitter of the sixth transistor is grounded; the collector of the seventh transistor is connected to the first end of the seventh resistor, the second end of the seventh resistor is connected to the first end of the fifth resistor; and the emitter of the seventh transistor is used as an output terminal of the current mirror unit.

[0015] Preferably, the amplification circuit is an eighth transistor, the base of the eighth transistor is used as an input terminal of the amplification circuit, the collector of the eighth transistor is used as an output terminal of the amplification circuit, and the emitter of the eighth transistor is grounded.

[0016] Preferably, the radio frequency front-end module further comprises a first inductor, the first inductor is connected to the output terminal of the amplification circuit, and the second end of the first inductor is used for connecting the power supply.

[0017] Preferably, the radio frequency front-end module further comprises a ninth transistor, the collector of the ninth transistor is connected to the collector of the second transistor and the base of the ninth transistor respectively, and the emitter of the ninth transistor is connected to the collector of the third transistor.

[0018] Preferably, the first transistor is an NPN transistor, and the second transistor is a PNP transistor.

[0019] In a second aspect, an embodiment of the present application provides a radio frequency chip, which comprises the radio frequency front-end module described above.

[0020] Compared with the prior art, the radio frequency front-end module in the present application has the following advantages: by arranging a bias circuit on the radio frequency front-end module, the first end of the bias circuit is used for connecting a power supply, the second end of the bias circuit is used for connecting an external logic control circuit, the third end of the bias circuit is used for outputting a bias current to an input terminal of the amplification circuit, and the external logic control circuit is used for controlling the on-off of the amplification circuit; thus, the bias circuit can adaptively work at different voltages without external intervention, energy consumption is reduced, cost is saved, and product service life is improved. BRIEF DESCRIPTION OF DRAWINGS

[0021] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed in the embodiment description will be briefly introduced as follows. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can also be obtained by those skilled in the art without any creative effort on the basis of these drawings.

[0022] Fig. 1 is a whole circuit diagram of a radio frequency front end module provided by the embodiment of the present application;

[0023] Fig. 2 is a V / I curve diagram when the sixth resistance is 1000 ohms provided by the embodiment of the present application;

[0024] Fig. 3 is a V / I curve diagram when the sixth resistance is 600 ohms provided by the embodiment of the present application.

[0025] In the figure, 100, radio frequency front end module, 1, signal input end, 2, input matching circuit, 3, amplification circuit, 4, output matching circuit, 5, signal output end, 6, bias circuit, 61, current mirror circuit, 611, current mirror unit, 612, voltage adjustment unit. DETAILED DESCRIPTION

[0026] The technical solutions in the embodiments of the present application will be clearly and completely described below. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all the other embodiments obtained by those skilled in the art without creative work are within the protection scope of the present application.

[0027] Embodiment one

[0028] Please refer to the figures 1-3, the embodiment of the present application provides a radio frequency front end module 100, the radio frequency front end module 100 includes signal input end 1, input matching circuit 2, amplification circuit 3, output matching circuit 4 and signal output end 5 which are electrically connected in turn; the radio frequency front end module 100 further includes bias circuit 6, the first end of the bias circuit 6 is used for connecting power supply, the second end of the bias circuit 6 is used for connecting external logic control circuit, the third end of the bias circuit 6 is used for outputting bias current to the input end of the amplification circuit 3, and the external logic control circuit is used for controlling the on-off of the amplification circuit 3.

[0029] Wherein, when the external logic control circuit outputs high level, the amplification circuit 3 is opened; when the external logic control circuit outputs low level, the amplification circuit 3 is closed. Of course, when the external logic control circuit outputs high level, the amplification circuit 3 can be closed; when the external logic control circuit outputs low level, the amplification circuit 3 is opened.

[0030] In the embodiment, the input matching circuit 2 is the first capacitor C1, and the output matching circuit 4 is the second capacitor C2.

[0031] The bias circuit 6 comprises a current mirror circuit 61, a first transistor Q1, a second transistor Q2, a third transistor Q3, a first resistor R1, a second resistor R2 and a third resistor R3; the base of the first transistor Q1 is the second end of the bias circuit 6, the emitter of the first transistor Q1 is grounded, and the collector of the first transistor Q1 is connected to the first end of the second resistor R2 and the first end of the third resistor R3 respectively; the second end of the second resistor R2 is the first end of the bias circuit 6 and is connected to the first end of the first resistor R1, the second end of the first resistor R1 is connected to the emitter of the second transistor Q2, the second end of the third resistor R3 is connected to the base of the second transistor Q2, the collector of the second transistor Q2 is connected to the collector of the third transistor Q3, the collector of the third transistor Q3 is also connected to the base of the third transistor Q3, and the emitter of the third transistor Q3 is connected to the input end of the current mirror circuit 61, and the output end of the current mirror circuit 61 is the third end of the bias circuit 6.

[0032] In the embodiment, the first transistor Q1 is an NPN transistor, and the second transistor Q2 is a PNP transistor. Specifically, the first transistor Q1 is connected to a power supply through the second resistor R2, and the second transistor Q2 is connected to the power supply through the first resistor R1, and the power supply satisfies a certain voltage range, such as 3.5V-5V. At the same time, the first resistor R1 and the second resistor R2 can respectively provide stable power supply for the second transistor Q2 and the third transistor Q3.

[0033] The collector and the base of the third transistor Q3 are connected together to form a diode, and the number of the third transistor Q3 can be increased according to the required voltage range of the power supply, which is not described here.

[0034] When the external logic control circuit outputs a high level, the first transistor Q1 is turned on, and the collector of the first transistor Q1 outputs a low level to turn on the second transistor Q2. The third transistor Q3 is output through the collector of the second transistor Q2, the bias current is output to the current mirror circuit 61 through the emitter of the third transistor Q3, and the adjusted bias current is output to the input end of the amplifying circuit 3 through the current mirror circuit 61, so as to realize the opening or closing function of the amplifying circuit 3. When the external logic control circuit outputs a high level, the amplifying circuit 3 is opened; when the external logic control circuit outputs a low level, the amplifying circuit 3 is closed. The bias circuit 6 can adaptively work at different voltages without external intervention, reduce energy consumption, and improve product service life.

[0035] In the embodiment, the radio frequency front end module 100 further comprises a fourth resistor R4, and the base of the first triode Q1 is connected to the external logic control circuit through the fourth resistor R4 in series. The fourth resistor R4 is used for adjusting the stability of the control signal output by the external logic control circuit, so as to ensure the safe operation of the first triode Q1.

[0036] In the embodiment, the current mirror circuit 61 comprises a current mirror unit 611 and a voltage adjusting unit 612. The first end of the voltage adjusting unit 612 is used as the input end of the current mirror circuit 61, the second end of the voltage adjusting unit 612 is used for connecting an external linear voltage regulator (LDO), the third end of the voltage adjusting unit 612 is connected to the input end of the current mirror unit 611, and the output end of the current mirror unit 611 is used as the output end of the current mirror circuit 61. The voltage adjusting unit 612 is used for adjusting the bias voltage output by the third triode Q3, and the current mirror unit 611 is used for converting the bias voltage into a corresponding bias current for output. The voltage adjusting unit 612 is used for adjusting the current output by the third triode Q3, so that the current is controlled within a different voltage range, and the voltage range control effect is good. At the same time, the current mirror circuit 61 converts the voltage output by the voltage adjusting unit 612 into a corresponding bias current, so as to effectively control the on-off of the amplifying circuit 3.

[0037] In the embodiment, the voltage adjusting unit 612 comprises a fourth triode Q4, a fifth resistor R5 and a sixth resistor R6.

[0038] The base of the fourth triode Q4 is used as the first end of the voltage adjusting unit 612, the collector of the fourth triode Q4 is used as the second end of the voltage adjusting unit 612 and is connected to the first end of the fifth resistor R5, the emitter of the fourth triode Q4 is connected to the first end of the sixth resistor R6, and the second end of the sixth resistor R6 is used as the third end of the voltage adjusting unit 612 and is connected to the second end of the fifth resistor R5.

[0039] In the embodiment, the current mirror unit 611 comprises a fifth transistor Q5, a sixth transistor Q6, a seventh transistor Q7 and a seventh resistor R7; the collector of the fifth transistor Q5 is the input terminal of the current mirror unit 611, the collector of the fifth transistor Q5 is also connected to the base of the fifth transistor Q5 and the base of the seventh transistor Q7 respectively, the emitter of the fifth transistor Q5 is connected to the collector of the sixth transistor Q6 and the base of the sixth transistor Q6, and the emitter of the sixth transistor Q6 is grounded; the collector of the seventh transistor Q7 is connected to the first end of the seventh resistor R7, the second end of the seventh resistor R7 is connected to the first end of the fifth resistor R5; and the emitter of the seventh transistor Q7 is the output terminal of the current mirror unit 611.

[0040] In the embodiment, the amplification circuit 3 is an eighth transistor Q8, the base of the eighth transistor Q8 is the input terminal of the amplification circuit 3, the collector of the eighth transistor Q8 is the output terminal of the amplification circuit 3, and the emitter of the eighth transistor Q8 is grounded.

[0041] Optionally, the amplification circuit 3 is a bipolar transistor or a field effect transistor, which is used to amplify the radio frequency signal. The radio frequency small signal enters the base of the eighth transistor Q8 through the first capacitor C1; and the amplified radio frequency signal is output through the second capacitor C2.

[0042] In the embodiment, the radio frequency front end module 100 further comprises a first inductor L1, the first inductor L1 is connected to the output terminal of the amplification circuit 3, and the second end of the first inductor L1 is used to connect the power supply.

[0043] In the embodiment, the radio frequency front end module 100 further comprises a ninth transistor Q9, the collector of the ninth transistor Q9 is connected to the collector of the second transistor Q2 and the base of the ninth transistor Q9 respectively, and the emitter of the ninth transistor Q9 is connected to the collector of the third transistor Q3.

[0044] In the specific implementation, the emitter of the third transistor Q3 outputs a current for controlling the working state of the fourth transistor Q4.

[0045] The LDO_Out is controlled by the PAEN signal output by the external logic control circuit. When the PAEN signal is high, the LDO_Out outputs a direct current voltage, such as 2.8V; otherwise, the LDO_Out is 0V.

[0046] When the PAEN signal is low, the LDO_2.8V is 0V. At this time, the collector of the third transistor Q3 does not output a bias current, and the eighth transistor Q8 does not work.

[0047] When the PAEN signal is high and VCC<LowLimitV, such as LowLimitV=3.6V, the base of the fourth transistor Q4 cannot get enough driving current under the PN junction voltage drop of the third transistor Q3, the ninth transistor Q9, the fifth transistor Q5 and the sixth transistor Q6, so the collector and the emitter of the fourth transistor Q4 cannot be turned on, and thus R`=R5.

[0048] When the PAEN signal is high and VCC>LowLimitV, such as LowLimitV=3.6V, the base current of the fourth transistor Q4 increases, the resistance between the collector and the emitter of the fourth transistor Q4 decreases, R` also decreases, under the current mirror effect of the fifth transistor Q5, the sixth transistor Q6 and the seventh transistor Q7, the bias current output by the emitter of the seventh transistor Q7 gradually increases, and the working state of the eighth transistor Q8 also changes synchronously.

[0049] Therefore, when VCC changes from low voltage to high voltage, the base bias current of the eighth transistor Q8 changes as shown in FIG. 2.

[0050] In order to increase the flexibility of circuit design, the control range under different voltages can be adjusted by changing the resistance value of the sixth resistor R6; the following takes the sixth resistor R6 as 1000 ohms and 500 ohms as examples.

[0051] When the sixth resistor R6=1000 ohms, the current values of m1 and m2 in the V / I curve shown in FIG. 2 are less than 0.8mA, and the current value is smaller at this time.

[0052] When the sixth resistor R6=500 ohms, the current values of m3 and m4 in the V / I curve shown in FIG. 3 are greater than 1.12mA, and the current value is greater at this time.

[0053] Embodiment two

[0054] The embodiment of the present application provides a radio frequency chip, and the radio frequency chip comprises the radio frequency front-end module 100.

[0055] It should be noted that, in this document, the term “comprising” or “including” or any other variant thereof is intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements not only includes those elements, but also includes other elements not explicitly listed or inherent to such a process, method, article or device. Without more limitations, the element defined by the statement “including a…” does not exclude the presence of another identical element in the process, method, article or device including the element.

[0056] The above merely illustrates the embodiments of the present application, and is not intended to limit the patent scope of the present application. Any equivalent structure or equivalent process conversion, or direct or indirect application in other related technical fields, which is made according to the content of the present application, shall be included in the patent protection scope of the present application.

Claims

1. A radio frequency front end module, the radio frequency front end module comprising a signal input, an input matching circuit, an amplification circuit, an output matching circuit and a signal output electrically connected in series; characterized in that, The radio frequency front-end module further comprises a bias circuit, a first end of the bias circuit is used for connecting a power supply, a second end of the bias circuit is used for connecting an external logic control circuit, and a third end of the bias circuit is used for outputting a bias current to an input end of the amplification circuit, and the external logic control circuit is used for controlling on-off of the amplification circuit. The bias circuit comprises a current mirror circuit, a first transistor, a second transistor, a third transistor, a first resistor, a second resistor and a third resistor. A base of the first transistor is used as the second end of the bias circuit, an emitter of the first transistor is grounded, and a collector of the first transistor is connected with a first end of the second resistor and a first end of the third resistor respectively; a second end of the second resistor is used as the first end of the bias circuit and is connected with a first end of the first resistor, a second end of the first resistor is connected with an emitter of the second transistor, a second end of the third resistor is connected with a base of the second transistor, a collector of the second transistor is connected with a collector of the third transistor, the collector of the third transistor is also connected with a base of the third transistor, an emitter of the third transistor is connected with an input end of the current mirror circuit, and an output end of the current mirror circuit is used as the third end of the bias circuit.

2. The radio frequency front-end module of claim 1, wherein, The radio frequency front-end module further comprises a fourth resistor, and the base of the first transistor is connected to the external logic control circuit through the fourth resistor in series.

3. The radio frequency front end module of claim 1, wherein the first and second switches are configured to be controlled by a single control signal. 3 The current mirror circuit comprises a current mirror unit and a voltage adjustment unit; a first end of the voltage adjustment unit is used as an input end of the current mirror circuit, a second end of the voltage adjustment unit is used for connecting an external linear voltage stabilizing power supply, a third end of the voltage adjustment unit is connected with an input end of the current mirror unit, and an output end of the current mirror unit is used as an output end of the current mirror circuit; the voltage adjustment unit is used for adjusting a bias voltage output by the third transistor, and the current mirror unit is used for converting the bias voltage into a corresponding bias current for output.

4. The radio frequency front end module of claim 3, wherein the first and second switches are configured to be controlled by a single control signal. 5 The voltage adjustment unit comprises a fourth transistor, a fifth resistor and a sixth resistor; A base of the fourth transistor is used as the first end of the voltage adjustment unit, a collector of the fourth transistor is used as the second end of the voltage adjustment unit and is connected with a first end of the fifth resistor, an emitter of the fourth transistor is connected with a first end of the sixth resistor, and a second end of the sixth resistor is used as the third end of the voltage adjustment unit and is connected with a second end of the fifth resistor.

5. The radio frequency front end module of claim 4, wherein the first and second switches are configured to be controlled by a single control signal. The current mirror unit comprises a fifth transistor, a sixth transistor, a seventh transistor and a seventh resistor; The collector of the fifth transistor is an input terminal of the current mirror unit, the collector of the fifth transistor is also connected to the base of the fifth transistor and the base of the seventh transistor respectively, the emitter of the fifth transistor is connected to the collector of the sixth transistor and the base of the sixth transistor, and the emitter of the sixth transistor is grounded; the collector of the seventh transistor is connected to the first end of the seventh resistor, the second end of the seventh resistor is connected to the first end of the fifth resistor; and the emitter of the seventh transistor is an output terminal of the current mirror unit.

6. The radio frequency front end module of claim 1, wherein, The amplification circuit is an eighth transistor, the base of the eighth transistor is an input terminal of the amplification circuit, the collector of the eighth transistor is an output terminal of the amplification circuit, and the emitter of the eighth transistor is grounded.

7. The radio frequency front end module of claim 1, wherein the first and second switches are configured to be controlled by a single control signal. The radio frequency front-end module further comprises a first inductor, the first inductor is connected to the output terminal of the amplification circuit, and the second end of the first inductor is used for connecting the power supply.

8. The radio frequency front end module of claim 1, wherein, The radio frequency front-end module further comprises a ninth transistor, the collector of the ninth transistor is connected to the collector of the second transistor and the base of the ninth transistor respectively, and the emitter of the ninth transistor is connected to the collector of the third transistor.

9. The radio frequency front end module of claim 1, wherein, The first transistor is an NPN transistor, and the second transistor is a PNP transistor.

10. A radio frequency chip, characterized by The radio frequency chip comprises the radio frequency front-end module according to any one of claims 1-9.

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