Device, radiation-emitting component, and method for producing same

Abstract

The invention relates to a device (1) having a substrate (2) and a plurality of conversion elements (3), wherein each of the conversion elements (3) is connected to the substrate (2) via a holding structure (4), and the holding structure (4) has a smaller cross-sectional area parallel to the main extension plane of the conversion element (3) than the associated conversion element (3). The invention also relates to a method for producing a device, to a radiation-emitting component, in particular a micro-LED, and to a method for producing a radiation-emitting component.

Description

[0001] Description

[0002] DEVICE, RADIATION-EMPLOYING COMPONENT AND METHOD FOR ITS MANUFACTURE

[0003] A device, a method for manufacturing a device, a radiation-emitting component and a method for manufacturing a radiation-emitting component are specified.

[0004] The task is to provide a device from which even small conversion elements can be easily detached. Furthermore, a method for manufacturing such a device should be specified. In addition, the task is to provide a radiation-emitting component and a method for its manufacture.

[0005] A device is described. In particular, the device is suitable for transferring conversion elements onto a substrate or a radiation-emitting semiconductor chip. The device is, in particular, a wafer with a plurality of conversion elements.

[0006] According to at least one embodiment, the device comprises a substrate. The substrate serves, in particular, to mechanically stabilize the device. For example, the substrate is transparent to electromagnetic radiation in the ultraviolet to infrared range of the electromagnetic spectrum. The substrate is thus advantageously suitable for laser-induced forward transformation (LIFT). Furthermore, it is possible to examine the color coordinates of the conversion elements based on their transparency to electromagnetic radiation. In particular, the substrate comprises quartz glass, borosilicate glass, and / or sapphire. The substrate is, in particular, free of elemental silicon. However, it is also possible that the substrate contains elemental silicon. Such a substrate consists, for example, of silicon.Elemental silicon, as used here and in the following, refers to silicon in its pure form, that is, silicon that has no bond to another type of element, for example oxygen.

[0007] According to at least one embodiment, the device comprises a plurality of conversion elements. Each conversion element converts, in particular, electromagnetic radiation of a first wavelength range into electromagnetic radiation of a second wavelength range. Each conversion element comprises a phosphor, which is, for example, embedded in a matrix material. However, it is also possible that the conversion elements are an epitaxially grown sequence of semiconductor layers. The matrix material is, for example, selected from the group consisting of polysiloxane, silicon, epoxy, glass, and combinations thereof. The matrix material is, in particular, photostructurable. The phosphor can be a ceramic phosphor and / or a quantum dot phosphor.In this and the following, "ceramic phosphor" refers to an inorganic phosphor not made from a semiconductor material. Advantageously, conversion elements with sub-micrometer thicknesses can be provided using the quantum dot phosphor. The thickness of a conversion element is defined here and in the following as its extent perpendicular to its principal plane of extension. In particular, a conversion element has a size, for example, parallel to the principal plane of extension, in the range of 5 micrometers x 5 micrometers to 2 millimeters x 2 millimeters inclusive. It is not necessary for the conversion elements to have a square shape. In particular, a maximum size of a conversion element is 150 micrometers x 150 micrometers.The conversion element has a thickness in the range of 1 micrometer to 200 micrometers including inclusive, and in particular in the range of 10 micrometers to 50 micrometers including inclusive.

[0008] The principal extension plane, as used here and in the following, refers to a plane of an element, such as the conversion element or the device, that is spanned by two principal extension directions of the element. A principal extension direction of the element denotes a direction in which the element has a maximum extension.

[0009] According to at least one embodiment of the device, the conversion elements are each connected to the substrate via a holding structure. The device therefore also includes a plurality of holding structures. A holding structure is, in particular, arranged between a conversion element and the substrate. The holding structure can be arranged such that it keeps the associated conversion element at a distance from the substrate. For example, the conversion element is connected to the substrate only via the holding structure. The holding structure can be part of the substrate or part of the conversion element. It is also possible that the holding structure forms a separate element within the device.

[0010] According to at least one embodiment of the device, the holding structure, parallel to the principal extension plane of the conversion element, has a smaller cross-sectional area than the associated conversion element. In other words, the holding structure, viewed from above and perpendicular to a principal extension plane of the device, has a smaller area than the associated conversion element. Here and in the following, a cross-sectional area is the area of ​​an element, such as the holding structure or the conversion element, that is obtained when the element is cut along a particular direction.

[0011] In particular, the contact area of ​​the holding structure on the substrate is smaller than the contact area of ​​the conversion element on the substrate if the holding structure were not present.

[0012] According to at least one embodiment, the device comprises the substrate and the plurality of conversion elements, wherein the conversion elements are each connected to the substrate via the holding structure and the holding structure has a smaller cross-sectional area parallel to the main extension plane of the conversion element than the associated conversion element.

[0013] Due to the smaller cross-sectional area of ​​the holding structure compared to the conversion element, the conversion element can be more easily detached from the substrate, i.e., with less force. In particular, the holding structure forms a predetermined breaking point at which the conversion element can be easily detached from the device. The holding structure creates a gap between the conversion elements and the substrate, which is typically filled with air. When the conversion elements are detached by laser-induced forward transfer, the air in the gap expands due to the introduced heat energy. This causes the conversion element to detach from the substrate. An additional layer between the substrate and the conversion elements, which would otherwise facilitate detachment during laser-induced forward transfer, is therefore advantageously unnecessary in this application.The manufacturing of the device can therefore be simplified and made more cost-effective.

[0014] According to at least one embodiment of the device, the conversion elements are mechanically connected to the substrate only via their respective holding structures. In other words, a conversion element is in mechanical contact with the substrate only via the holding structure. This advantageously makes it particularly easy to separate the conversion elements from the substrate.

[0015] According to at least one embodiment of the device, the holding structure is formed from a material of the conversion elements. In other words, the holding structure can comprise or consist of the phosphor and the matrix material, or an epitaxially grown semiconductor material. Advantageously, a holding structure made from the material of the conversion elements simplifies the fabrication of the device, as it is not necessary to deposit an additional material for the holding structure onto the substrate. According to at least one embodiment of the device, the holding structure is formed from a material of the substrate. In particular, the substrate in this case comprises a structurable material, for example, an organic polymer.If the holding structure is formed from the substrate material, then after the conversion element is detached from the carrier, only a portion or remnants of the holding structure remain on the conversion element. Advantageously, even with the holding structure made from the substrate material, it is not necessary to use an additional material for the holding structure in the device. This allows the process chain for manufacturing the device to be kept as short as possible.

[0016] According to at least one embodiment of the device, the support structure includes a support post. Here and in the following, a support post is understood to be a vertical structural element. The support post is specifically designed to support the associated conversion element. Advantageously, the support posts are simple structures to manufacture. The support posts can have a round, rectangular, in particular square, hexagonal, n-sided, or polygonal cross-section parallel to the main plane of extension of the conversion element. For example, the support post is arranged in the center of the associated conversion element.

[0017] According to at least one embodiment of the device, the holding structure comprises a plurality of holding posts. In particular, the holding structure is formed from the plurality of holding posts. The plurality of holding posts is, for example, arranged such that it uniformly surrounds the center of the associated conversion element.

[0018] The height of the support post(s) is, for example, in the range of 200 nanometers to 10 micrometers inclusive, particularly in the range of 0.5 micrometers to 10 micrometers inclusive, for instance in the range of 1 micrometer to 2 micrometers inclusive. Here and in the following, the height of the support post is defined as its extent perpendicular to the main extension plane of the conversion element.

[0019] The diameter of the support posts is, in particular, between 1 micrometer and 50 micrometers. Here and in the following, the diameter of a support post is defined as an extent of the support post parallel to the principal extension plane of the associated conversion element.

[0020] According to at least one embodiment of the device, the holding structure has retaining straps. Retaining straps are, in particular, strips that extend between the substrate and the conversion elements. The retaining straps extend, for example, only partially, that is, not across the entire surface, between the substrate and the conversion elements.

[0021] For example, a conversion element is held apart from the substrate by two retaining straps. The retaining straps are arranged, for example, along at least two edges of the associated conversion element.

[0022] In particular, a retaining strap with a passivation material, such as SiN x The thickness of the retaining straps is, for example, between 0.2 micrometers and 5 micrometers inclusive. The thickness of a retaining strap is its extent perpendicular to the principal extension plane of the conversion elements. The width of the retaining straps is, for example, between 1 micrometer and 10 micrometers inclusive. The width of a retaining strap is, in particular, its smallest extent parallel to the principal extension plane of the conversion element. The length of the retaining straps is, for example, between 2 micrometers and 20 micrometers inclusive. The length of a retaining strap is, in particular, its largest extent parallel to the principal extension plane of the conversion element.

[0023] According to at least one embodiment of the device, a dam is arranged between two conversion elements. The dam is made of the same material as the conversion elements or the substrate. In other words, the dam can be part of the substrate. For example, the dam is not in direct mechanical contact with the conversion elements. Advantageously, the dam allows air to be trapped in the gap between the conversion elements and the substrate during laser-induced forward transfer. This makes the detachment of the conversion elements more efficient. Furthermore, the dam provides mechanical protection for the edges of the conversion elements.

[0024] According to at least one embodiment, the conversion elements have a dielectric coating. The dielectric coating is arranged, in particular, on a side of the conversion element facing away from or towards the mounting structure. If the conversion element is used in a radiation-emitting component, it is arranged such that the dielectric coating is located on the side of the conversion element facing away from the radiation-emitting semiconductor chip. Advantageously, the dielectric coating can serve to optimize the color of the electromagnetic radiation emitted by the conversion element over a specific angle. The dielectric coating can be structured or unstructured. For example, the dielectric coating is a stack of layers of dielectric materials. The dielectric coating may, for example, contain oxides and / or nitrides.In particular, the dielectric coating is formed from a polymer, for example a thin one.

[0025] According to at least one embodiment of the device, the conversion elements are each at least partially, and in particular completely, surrounded by a passivation. In particular, the passivation is arranged on an outer surface of the conversion elements. For example, the passivation is arranged only on one side of each conversion element. However, it is also possible for the passivation to surround the conversion elements completely. Advantageously, the passivation protects the conversion elements from external influences, such as water and / or oxygen. The passivation comprises, in particular, an oxide, for example, SiO2ZrO2, HfO2, and / or Al2O3, parylene, and / or fluoropolymers. Parylene is, in particular, a paraxylene-based polymer.

[0026] According to at least one embodiment of the device, the conversion elements are embedded in the substrate. In other words, each conversion element is surrounded by the substrate on at least three sides. However, the conversion elements are only in mechanical contact with the substrate via the holding structure. The gap between the conversion elements and the substrate extends, for example, along three sides of the conversion element. The substrate material between two embedded conversion elements forms the dam. Advantageously, by embedding the conversion elements in the substrate, they are protected from mechanical influences. Furthermore, it is not necessary for the dam to be made of the same material as the conversion elements.

[0027] According to at least one embodiment of the device, the substrate comprises a substrate support and an embedding layer. The substrate support serves, in particular, to mechanically stabilize the embedding layer. The conversion elements are, for example, embedded in the embedding layer and / or connected to the embedding layer via the holding structure. The substrate support comprises, for example, quartz glass, borosilicate glass, and / or sapphire. The embedding layer comprises, in particular, a structurable organic polymer.

[0028] The organic polymer is formed, for example, with benzocyclobutene (BCB). Alternatively or additionally, the embedding layer can consist of polyethylene terephthalate, an epoxy resin, and / or an acrylic resin.

[0029] According to at least one embodiment of the device, the substrate has an adhesive layer formed, for example, with benzocyclobutene and / or polyethylene terephthalate (PET), an epoxy resin, and / or an acrylic resin. The adhesive layer has a thickness in the range of 1 micrometer to 10 micrometers inclusive, for example, approximately 5 micrometers. The adhesive layer is arranged, for example, on a side of the substrate facing the support structure.

[0030] According to at least one embodiment of the device, the substrate has an absorption layer. The absorption layer is arranged on one side of the substrate facing the conversion elements. Advantageously, the absorption layer can absorb laser light used during a laser-induced forward transfer. This allows the conversion elements to be more easily detached from the substrate during the laser-induced forward transfer. The absorption layer comprises, for example, a material selected from the group consisting of Au, Al, W, Si, TiCt, and combinations thereof. The absorption layer can be structured. Advantageously, this enables targeted absorption control during the laser-induced forward transfer. Alternatively, the absorption layer can be unstructured. This makes the fabrication of the absorption layer more cost-effective and simpler.

[0031] A method for manufacturing a device is further described. In particular, the method is suitable for manufacturing a device described herein. Therefore, the embodiments, features, and advantages described in connection with the device also apply to the method for manufacturing a device, and vice versa. According to at least one embodiment, the method comprises arranging a structured sacrificial layer between a substrate and a plurality of conversion elements.

[0032] According to at least one embodiment, the process further includes the removal of the sacrificial layer, so that the conversion elements are each connected to the substrate via a holding structure. The removal of the sacrificial layer is carried out in particular by an etching process, for example a plasma etching process, or by dissolving the sacrificial layer with a solvent.

[0033] According to at least one embodiment, the method for manufacturing a device comprises the following steps:

[0034] - Arranging the structured sacrificial layer between the substrate and the multitude of conversion elements,

[0035] - Removal of the structured sacrificial layer, so that the conversion elements are each connected to the substrate via the holding structure, wherein the holding structure has a smaller cross-sectional area parallel to the main extension plane of the conversion element than the associated conversion element.

[0036] By structuring the sacrificial layer, the retention structure can advantageously be formed in a simple manner. In particular, the structured sacrificial layer has openings that correspond to the retention structures. Material that is filled into the openings of the structured sacrificial layer forms the retention structure. According to at least one embodiment of the method, the sacrificial layer comprises a material selected from the following group: SiO2, silicon (Si), photoresist, acrylate, epoxy, benzocyclobutene, polyvinyl alcohol varnish, and combinations thereof.

[0037] The sacrificial layer of SiO2 can be removed by gaseous hydrofluoric acid. In particular, a passivation layer, for example with Al2O3, surrounds the conversion layers when the sacrificial layer is removed with gaseous hydrofluoric acid. This advantageously prevents corrosion of the conversion element by the hydrofluoric acid.

[0038] The sacrificial layer containing silicon is removed, for example, by plasma etching using XeF and / or SF6. Here too, passivation around the conversion layers is advantageous for corrosion protection.

[0039] The sacrificial layer with a photoresist can be removed by oxygen plasma. Advantageously, no passivation around the conversion elements is necessary. Furthermore, the sacrificial layer with a photoresist enables a short process chain, is more cost-effective, and the etching process is fast. In addition, the photoresist is particularly easy to structure. The structured sacrificial layer can therefore be produced simply and cost-effectively.

[0040] The sacrificial layer of acrylate, epoxy, or BGB can also be removed with an oxygen plasma. Advantageously, the sacrificial layer of acrylate, epoxy, or BGB exhibits high temperature stability. The sacrificial layer of polyvinyl alcohol lacquer (PVA lacquer) can be removed by dissolving it, for example, with water as a solvent. Dissolving is carried out at a temperature of less than 120°C, and particularly less than 50°C.

[0041] According to at least one implementation of the process, arranging the structured sacrificial layer between the substrate and the multitude of conversion elements comprises the following steps:

[0042] - Applying the structured sacrificial layer to the substrate and

[0043] - Applying the numerous conversion elements to the structured sacrificial layer. In particular, by applying the numerous conversion elements to the structured sacrificial layer, the structured sacrificial layer is positioned between the substrate and the numerous conversion elements. For example, the numerous conversion elements are ground down after being applied to the structured sacrificial layer. This advantageously results in a more even surface of the conversion elements.

[0044] According to at least one embodiment of the process, when applying the structured sacrificial layer to the substrate, a sacrificial layer is applied to the substrate and subsequently structured. For example, the sacrificial layer is structured by photostructuring, in particular using a photoresist.

[0045] According to at least one embodiment of the method, a substrate is provided comprising a substrate support and an embedding layer. In particular, the embedding layer is structured before the application of the structured sacrificial layer to the substrate such that retention structures are formed with the material of the embedding layer. For example, the embedding layer is structured to form cavities that contain the retention structures and in which a conversion element can be placed.

[0046] According to at least one implementation of the process, the numerous conversion elements are applied to the structured sacrificial layer by one of the following processes: spray coating, laminating, slot die coating, film casting, doctor blade application, laser-induced forward transfer, screen printing, stencil printing, or dam-and-fill process. Specifically, the numerous conversion elements are initially applied to the structured sacrificial layer in a continuous state. After application, the continuous conversion elements are then separated. This separation is achieved, for example, by laser cutting.

[0047] In particular, the conversion elements can be further structured after being applied to the structured sacrificial layer. This is done, for example, by plasma etching, especially with the aid of a photoresist, or mechanically. The photoresist can be a dry or wet resist.

[0048] According to at least one implementation of the method, the arrangement of the structured sacrificial layer between the substrate and the multitude of conversion elements comprises the following steps: - Applying the structured sacrificial layer to a multitude of conversion elements on an auxiliary carrier,

[0049] - Application of an embedding layer and a substrate carrier onto the structured sacrificial layer and

[0050] - Removal of the auxiliary carrier. In other words, the auxiliary carrier with the multitude of conversion elements is first provided. The structured sacrificial layer is applied to the multitude of conversion elements, for example, as described above. Then the embedding layer and the substrate carrier are applied. In particular, the embedding layer is arranged between the substrate carrier and the structured sacrificial layer. The removal of the auxiliary carrier is carried out, for example, by laser lift-off.

[0051] According to at least one implementation of the process, the application of the embedding layer and the substrate carrier comprises the following steps:

[0052] - Applying an initial portion of the embedding layer to the structured sacrificial layer and

[0053] - Application of a second part of the embedding layer and the substrate support onto the first part of the embedding layer. The application of the second part of the embedding layer and the substrate support is carried out, in particular, by wafer bonding. During the application of the second part of the embedding layer and the substrate support onto the first part of the embedding layer, the first part of the embedding layer and the second part of the embedding layer are, for example, bonded together in such a way that the embedding layer is formed. In particular, the first part of the embedding layer and the second part of the embedding layer are materially bonded together and / or cannot be separated from each other without damage.

[0054] A radiation-emitting component is further described. In particular, the device described here, with its numerous conversion elements, is used in the manufacture of the radiation-emitting component. Therefore, the design features, characteristics, and advantages described in connection with the device also apply to the radiation-emitting component, and vice versa.

[0055] According to at least one embodiment, the radiation-emitting component comprises a radiation-emitting semiconductor chip. The radiation-emitting semiconductor chip is specifically designed to generate and emit electromagnetic radiation of a first wavelength range. For example, the first wavelength range includes electromagnetic radiation from the ultraviolet to blue region of the electromagnetic spectrum.

[0056] In particular, the radiation-emitting semiconductor chip has an epitaxially grown sequence of semiconductor layers with an active region that generates electromagnetic radiation in the first wavelength range. Examples of radiation-emitting semiconductor chips include light-emitting diodes (LEDs) and laser diode chips.

[0057] According to at least one embodiment, the radiation-emitting component includes a conversion element. The conversion element has, in particular, features as described in connection with the multiple conversion elements of the device. For example, the conversion element is arranged on a main radiation emission surface of the radiation-emitting semiconductor chip.

[0058] According to at least one embodiment of the radiation-emitting component, the conversion element has a holding structure or remnants of a holding structure. The holding structure is designed, in particular, as already described in connection with the device. Remnants of the holding structure are, in particular, parts of a holding structure remaining on the conversion element that are made of a different material than the conversion element.

[0059] In particular, the holding structure or the remnants of the holding structure are arranged on a side of the conversion element facing away from the radiation-emitting semiconductor chip. In other words, the conversion element is arranged between the radiation-emitting semiconductor chip and the holding structure or the remnants of the holding structure. Alternatively, the holding structure or the remnants of the holding structure can be arranged on a side of the conversion element facing the radiation-emitting semiconductor chip. In other words, the holding structure or the remnants of the holding structure are arranged between the conversion element and the radiation-emitting semiconductor chip.

[0060] According to at least one embodiment of the radiation-emitting device, the support structure or the remnants of the support structure have a smaller cross-sectional area parallel to a principal plane of extension of the conversion element than the conversion element itself. According to at least one embodiment, the radiation-emitting device comprises the radiation-emitting semiconductor chip and the conversion element, wherein the conversion element includes the support structure or the remnants of the support structure, and the support structure or the remnants of the support structure have a smaller cross-sectional area parallel to the principal plane of extension of the conversion element than the conversion element itself. The support structure, with its smaller cross-sectional area than that of the conversion element, advantageously allows the conversion element to be arranged on the radiation-emitting semiconductor chip without significant mechanical stress.

[0061] This radiation-emitting component is particularly suitable for automotive symbols, signs, ambient lighting, displays (especially RGB displays), headlights, and projectors. The radiation-emitting component emits, for example, white light or colored light, such as green or red light.

[0062] According to at least one embodiment of the radiation-emitting component, the radiation-emitting semiconductor chip is or comprises a micro-LED. The micro-LED can be a vertically emitting micro-LED or a horizontally emitting micro-LED.

[0063] In the broadest sense, micro-LEDs can be defined as any light-emitting diode of a particularly small size. Micro-LEDs can have a width, length, thickness, and / or diameter of less than or equal to 100 micrometers, in particular less than or equal to 70 micrometers, for example, less than or equal to 50 micrometers. Specifically, micro-LEDs, for example rectangular micro-LEDs, have an edge length, particularly when viewed from above the layers of the layer stack, of a light-emitting area of ​​less than or equal to 70 micrometers, for example, less than or equal to 50 micrometers. A micro-LED is, for example, a light-emitting diode from which a growth substrate has been removed, such that the thickness of the micro-LED is, for example, in the range of 1.5 micrometers inclusive to 10 micrometers inclusive.

[0064] For example, the micro-LED is provided on a wafer with removable support structures. The micro-LED can be removed from the wafer without damage.

[0065] Micro-LEDs are primarily used in displays. They form pixels or subpixels and emit light in a defined color. Due to their small pixel size and high density at close intervals, micro-LEDs are suitable for small monolithic displays for augmented reality applications, particularly smart glasses. Furthermore, other applications are being developed, especially for data communication and pixelated lighting applications.

[0066] According to at least one embodiment of the radiation-emitting device, an adhesive layer is arranged between the conversion element and the radiation-emitting semiconductor chip. In particular, the adhesive layer comprises an adhesive material that advantageously prevents the conversion element from detaching from the radiation-emitting semiconductor chip. For example, the adhesive layer comprises a silicone. A method for fabricating a radiation-emitting device is further described. In particular, the method is used to fabricate the radiation-emitting device described herein. Therefore, embodiments, features, and advantages described in connection with the radiation-emitting device also apply to the method, and vice versa.

[0067] According to at least one embodiment of the method, a device described herein is provided with a plurality of conversion elements. In particular, the device is designed as described above. Furthermore, a conversion element, in particular a single one, is transferred from the device to a radiation-emitting semiconductor chip.

[0068] According to at least one embodiment of the process, an adhesive layer is applied to the multiple conversion elements before the conversion element is transferred. In particular, the adhesive layer is applied by one of the following methods: electrostatic dispensing, laser-induced forward transfer, or spray coating. For example, the adhesive layer is applied before the structured sacrificial layer is removed.

[0069] According to at least one embodiment of the method, the conversion element is transferred from the device to the radiation-emitting semiconductor chip by means of laser-induced forward transfer. Advantageously, the holding structure allows for easy detachment of the conversion element from the substrate of the device. Mechanical stress on the conversion element can thus be kept to a minimum. Furthermore, laser-induced forward transfer is a cost-effective method. Therefore, the radiation-emitting component can be manufactured cost-effectively.

[0070] According to at least one embodiment of the method, transferring the conversion element from the device to the radiation-emitting semiconductor chip comprises the following steps:

[0071] - Transferring the multitude of conversion elements onto a transfer film and

[0072] - Transferring a conversion element, particularly a single one, to the radiation-emitting semiconductor chip. Specifically, the plurality of conversion elements is transferred to the transfer film together. In other words, the plurality of conversion elements is transferred to a transfer film before a single conversion element is transferred to the semiconductor chip. The transfer of the conversion element therefore does not occur directly from the device to the radiation-emitting semiconductor chip. The transfer of the plurality of conversion elements to the transfer film can also be performed separately for each conversion element. For example, the transfer of the plurality of conversion elements to the transfer film is performed using laser-induced forward transfer. Alternatively, it is possible for the conversion elements to be transferred to the transfer film using the transfer film itself, i.e., using film transfer.

[0073] According to at least one embodiment of the method, the conversion element is transferred from the device or the transfer foil to the radiation-emitting semiconductor chip by means of a stamp transfer or a pick-and-place process.

[0074] According to at least one embodiment of the method, the conversion elements are examined for their color coordinates before being transferred to the radiation-emitting semiconductor chip. Thus, it is advantageously possible to combine the conversion element and the radiation-emitting semiconductor chip in such a way that a desired color coordinate is achieved by the fabricated radiation-emitting component.

[0075] Further advantageous embodiments, designs and further developments of the device, the method for manufacturing a device, the radiation-emitting component and the method for manufacturing a radiation-emitting component result from the following exemplary embodiments shown in conjunction with the figures.

[0076] Figures 1A, 3A, 4A, 5, 6 and 7A each show a schematic sectional view of a device according to an exemplary embodiment.

[0077] Figures 1B, 3B, 4B and 7B each show a schematic top view of a device according to an exemplary embodiment.

[0078] Figures 2A to 2K show schematic top views of conversion elements with holding structures. Figures 8A to 8F show schematic sectional views of steps in a method for manufacturing a device according to an exemplary embodiment.

[0079] Figures 9A to 9H show schematic sectional views of steps in a method for manufacturing a device according to an exemplary embodiment.

[0080] Figures 10A to 10G show schematic sectional views of steps in a method for manufacturing a device according to an exemplary embodiment.

[0081] Figures 11A to HD show schematic sectional views of steps of a method for manufacturing a device according to an exemplary embodiment.

[0082] Figure 12A shows a schematic sectional view of a radiation-emitting component according to an exemplary embodiment.

[0083] Figure 12B shows a schematic top view of a radiation-emitting component according to an exemplary embodiment.

[0084] Figures 13A and 13B, 14A and 14B, and 15A and 15B show schematic sectional views of steps in a method for manufacturing a radiation-emitting component according to an exemplary embodiment.

[0085] Identical, similar, or similarly functioning elements are marked with the same reference symbols in the figures. The figures and the relative sizes of the elements depicted within them are not to be considered to scale. Rather, individual elements, particularly layer thicknesses, may be exaggerated for clarity and / or better understanding.

[0086] An exemplary embodiment of a device 1 is shown as a schematic sectional view in Figure 1A. Figure 1B shows a schematic top view of this exemplary embodiment.

[0087] The device 1 comprises a substrate 2. The substrate 2 is transparent to electromagnetic radiation in the ultraviolet to infrared range of the electromagnetic spectrum. Therefore, the substrate 2 is advantageously suitable for use in laser-induced forward transfer. In this case, the substrate 2 is a sapphire wafer with a thickness of approximately 150 mm. Both sides parallel to a principal plane of extension of the substrate 2 are polished.

[0088] A plurality of conversion elements 3 are arranged on substrate 2. The conversion elements 3 have an epitaxially grown semiconductor layer sequence or a phosphor, which is in particular embedded in a matrix material. The conversion elements 3 are in particular smaller than 150 micrometers x 150 micrometers. The conversion elements 3 are spaced apart from each other on substrate 2. In other words, two adjacent conversion elements 3 are not in direct mechanical contact with each other.

[0089] Each of the conversion elements 3 is connected to the substrate 2 via a retaining structure 4. The retaining structure 4 is in direct mechanical contact with the substrate 2 and the conversion element 3. In this case, the retaining structure 4 is designed as a retaining post 41, which is arranged at the center of the conversion element 3. The retaining structure 4 is made of the same material as the associated conversion element 3. The retaining structure 4 forms an air gap 21 between the substrate 2 and the conversion element 3. The air gap has the same height as the retaining structure 4. The height of the retaining post 41 is between 1 micrometer and 2 micrometers. Viewed from above, i.e., perpendicular to a principal extension plane of the conversion element 3, the retaining post 41 has a round shape.The support structure 4 has a smaller cross-sectional area parallel to the main extension plane of the conversion element 3 than the associated conversion element 3.

[0090] Figures 2A to 2K show various embodiments of support structures 4, in particular of support posts 41. The cross-sectional area of ​​the support structure 4 is in each case smaller than the cross-sectional area of ​​the conversion element 3, with the cross-sectional area being determined in each case parallel to the principal extension plane of the conversion element 3. Figures 2A, 2B and 2C show different shapes for a support post 41. Viewed from above, the support post 41 is round, square or hexagonal.

[0091] Figure 2D shows a conversion element 3 with four retaining posts 41. These are arranged around the center of the conversion element 3. The four retaining posts 41 together form the retaining structure 4. Compared to the retaining post 41 of Figure 2A, the retaining post 41 of Figure 2E has a larger diameter. The retaining structure 4 of Figure 2F has three retaining posts 41, which, viewed from above, have the form of parallel strips arranged side by side.

[0092] Figure 2G shows support structures 4 which, in plan view of the conversion element 3, form a hexagonal structure. The individual support posts 41 have the shape of a parallelogram in plan view. Figure 2H shows a support structure 4 on a conversion element 3, which has a large number of square support posts 41 in plan view. The support posts 41 are distributed over the entire associated conversion element 3. The support posts 41 are arranged along a rectangular grid. The support posts 41 of Figure 21 form a rectangular grid.

[0093] In Figure 2J, the support structure 4 also has a plurality of support posts 41. Viewed from above, the support posts 41 have a square shape and are arranged in a tile-like pattern on the conversion element 3. Figure 2K, on ​​the other hand, shows a plurality of support posts 41 that form parallel strips arranged side by side in plan view.

[0094] Figures 3A and 3B show a further embodiment of a device 1. Figure 3A shows the device 1 as a schematic sectional view and Figure 3B shows the device 1 as a schematic top view.

[0095] Conversion elements 3, holding structures 4, and the substrate 2 of the device 1 are configured as described in connection with Figures 1A and 1B. However, a dam 5 is arranged between two adjacent conversion elements 3. The dam 5 is formed from the same material as the conversion elements 3. There is, however, an air gap 21 between the dam 5 and the conversion elements 3. In other words, the conversion elements 3 are not in direct mechanical contact with the dam 5.

[0096] Dam 5 ensures that when conversion elements 3 are detached using laser-induced forward transfer, the air build-up is as large as possible, even if neighboring conversion elements 3 have already been detached.

[0097] Figures 4A and 4B show a further embodiment of a device 1. Figure 4A shows a schematic sectional view of the device 1, whereas Figure 4B shows a schematic top view.

[0098] The device 1 is designed analogously to the embodiment shown in Figures 3A and 3B. However, in this case, an absorption layer 22 is arranged on the substrate 2. The absorption layer 22 completely covers the substrate 2 on one side facing the conversion elements 3. The absorption layer 22 is arranged between the support structures 4 and the substrate 2. The absorption layer 22 is also arranged between the dam 5 and the substrate 2. The absorption layer 22 can be structured or unstructured. For example, the absorption layer contains or consists of Au, Al, W, or Si.

[0099] The absorption layer 22 can absorb energy from the laser light used in a laser-induced forward transfer and effectively transfer it into the air in the air gap 21 between the substrate 2 and the conversion elements 3. In other words, the absorption layer 22 serves to improve heat transfer during the laser-induced

[0100] Forward transfer.

[0101] The embodiment of the device 1 shown in Figure 5 is constructed analogously to the embodiment of the device shown in Figures 4A and 4B. However, the conversion elements 3 have a dielectric coating 6. The dielectric coating 6 is arranged on a side of the conversion elements 3 facing away from the substrate 2. The dielectric coating 6 covers this side of the conversion elements 3 completely. The dielectric coating 6 is in direct mechanical contact with the material of the conversion elements 3. Advantageously, the dielectric coating 6 serves to optimize a color over an angle.

[0102] Figure 6 shows an embodiment of a device 1 which, in addition to the dielectric coating 6, has a passivation 7 on the conversion elements 3. The substrate 2 and the conversion elements 3 are configured as described in connection with Figures 1A and 1B. The device 1 also has the absorption layer 22 of Figures 4A and 4B. In this case, no dam 5 is arranged between two adjacent conversion elements 3.

[0103] The passivation 7 completely surrounds a conversion element 3 together with the associated retaining structure 4, which is a retaining post 41. The passivation 7 is in direct mechanical contact with the associated conversion element 3, the dielectric coating 6, and the retaining structure 4. The passivation 7 serves to protect the conversion element 3 from external influences. Figures 7A and 7B show a device 1 in which the retaining structure 4 comprises retaining straps 42. The device 1 comprises a substrate 2 and a plurality of conversion elements 3, which are configured as described in connection with Figures 1A and 1B. A dam 5 is located between two adjacent conversion elements 3.

[0104] In this arrangement, a conversion element 3 is connected to the substrate 2 by two retaining straps 42. The retaining straps 42 are arranged between the substrate 2 and the conversion elements 3. An air gap 21 runs between the conversion elements 3 and the substrate 2, as well as between the dam 5 and the substrate. The air gap also extends between the retaining straps 42 and the substrate 2. In the area of ​​the retaining straps 42, the substrate 2 has depressions 25. The conversion elements 3 are thus suspended above the substrate 2 by means of the retaining straps 42. In this arrangement, the retaining straps are designed such that they run between the substrate 2 and the dam 5 and are in direct mechanical contact with both.

[0105] The retaining straps 42 run parallel to each other. In this case, the retaining straps 42 are arranged along two parallel edges of the conversion elements 3. The retaining straps 42 have a thickness of 0.2 micrometers to 5 micrometers inclusive and a width of 1 micrometer to 10 micrometers inclusive.

[0106] The device 1 with the retaining straps 42 can be manufactured using the following process steps. First, the substrate 2 is provided. A sacrificial layer 8 is deposited onto the substrate 2 in a structured manner. The sacrificial layer contains, for example, SiO2. Subsequently, the retaining straps 42 are formed by depositing the material of the retaining straps 42 in a structured manner. For example, the material is SiN. x The conversion elements 3 are applied to the retaining straps 42 and then the sacrificial layer 8 is removed.

[0107] Figures 8A to 8F show a method for manufacturing a device 1. As shown in Figure 8A, a substrate 2 with a sacrificial layer 8 is first provided. The substrate 2 is a sapphire substrate with a thickness of approximately 150 mm. The sides of the substrate 2 that run parallel to the main plane of extension of the substrate 2 are polished. The sacrificial layer 8 comprises or consists of SiO2 and has a thickness of approximately 300 nanometers. It is possible that the substrate 2 has an adhesive layer (not shown). The adhesive layer has a thickness of approximately 5 micrometers and is formed with BOB. The adhesive layer is formed by spin-casting onto the sapphire substrate.

[0108] As shown in Figure 8B, the sacrificial layer 8 is structured so that openings 81 are formed within it. This structuring is achieved through photostructuring. A conversion material layer 31 is applied to the structured sacrificial layer 8, i.e., the sacrificial layer 8 with the openings 81 (Figure 80). The conversion material layer 31 is formed, for example, by doctor blade application and curing. The conversion material layer 31 fills the openings 81, so that the retaining structure 4 in the form of retaining posts 41 is formed within the openings 81. To obtain a large number of conversion elements 3 in the device 1, a mask 17 is applied to the conversion material layer 31, as shown in Figure 8D. The conversion material layer 31 is removed in the areas not covered by the mask 17. Subsequently, the mask 17 is also removed, resulting in the structure shown in Figure 8E.

[0109] Alternatively, a mask 17 can first be applied to the structured sacrificial layer 8. In both cases, the mask 17 comprises a dry or wet lacquer that has been photostructured. Subsequently, the conversion elements 3 are formed by doctor blade application and curing in areas of the sacrificial layer 8 that are not covered by the mask 17. The conversion elements 3 can then be sanded. Finally, the mask 17 is removed.

[0110] Before the sacrificial layer 8 is removed, as shown in Figure 8F, the emission properties of the conversion elements 3 can be measured. In this case, the sacrificial layer is removed by etching.

[0111] Figures 9A to 9H show a further embodiment of a method for manufacturing a device 1. First, a substrate 2 with a sacrificial layer 8 is provided, as shown in Figure 9A. However, in contrast to the method shown in Figures 8A to 8F, a passivation 7, which can also be referred to as a protective layer, is applied to the sacrificial layer 8 (Figure 9B). The sacrificial layer 8 and the passivation 7 are structured such that openings 81 extend through both the passivation 7 and the sacrificial layer 8, as shown in Figure 90. Alternatively, the passivation 7 can also be applied after the sacrificial layer 8 has been structured. In this case, the passivation 7 has Al₂O₃.

[0112] Using a mask 17 (not shown), a large number of conversion elements 3 are applied to the passivation 7. This is shown in Figure 9D. The conversion elements 3 are applied in such a way that material from the conversion elements 3 is introduced into the openings 81. The material in the openings 81 forms retaining structures 4, which in this case are designed as retaining posts 41.

[0113] A further portion of the passivation 7 is applied to the conversion elements 3 and the passivation 7, so that the conversion elements 3 are completely surrounded by the passivation 7 except for the area of ​​the holding structure 4, as shown in Figure 9E. Subsequently, a mask 17, which includes a photoresist, is selectively applied to the conversion elements 3 (Figure 9F). This allows the passivation 7 on the sacrificial layer 8 between the conversion elements 3 to be removed without removing the passivation 7 around the conversion elements 3. The sacrificial layer 8 is exposed by etching the passivation 7, as shown in Figure 9G. Finally, to obtain the device 1, the sacrificial layer 8 is removed (Figure 9H). As a result, the conversion elements 3 are connected to the substrate 2 only via their respective holding structures 4.

[0114] Another embodiment of a method for manufacturing a device 1 is shown in Figures 10A to 10G. In this method, a plurality of individual conversion elements 3 are provided on a support carrier 9 with a release layer 91, as shown in Figure 10A. The release layer 91 is arranged between the support carrier 9 and the conversion elements 3. The support carrier 9 can be configured like the substrate 2 described in connection with Figures 1A and 1B. The conversion elements 3 are also configured as described in connection with Figures 1A and 1B. The release layer 91 comprises Si3N4. The conversion elements 3 are formed on the support carrier 9 by coating it and subsequently structuring it, for example by lithography, laser structuring, or plasma structuring.It is possible that the support carrier 9 has an adhesive layer between the sapphire and the release layer 91.

[0115] A sacrificial layer 8, having openings 81, is applied to the conversion elements 3 and the release layer 91, which is not covered by the conversion elements 3. The sacrificial layer has a thickness of approximately 300 nanometers. The structured sacrificial layer 8 is applied by depositing the sacrificial layer material, in this case, for example, SiO2, and subsequently photostructuring it to form the openings 81. In this case, the sacrificial layer 8 covers not only one side of the conversion elements 3 that is parallel to the main plane of extension of the conversion elements 3, but also sides of the conversion elements 3 that are perpendicular to the main plane of extension of the conversion elements 3. This contrasts with the methods of Figures 8A to 8F and 9A to 9H, in which the sacrificial layer is only arranged between one side of the conversion elements 3 and the substrate 2.In other words, in these processes, sides of the conversion elements 3 that are perpendicular to a principal extension plane of the conversion element 3 are free of the sacrificial layer.

[0116] A first part of an embedding layer 23 is applied to the structured sacrificial layer 8, as shown in Figure 1 OC. The first part of the embedding layer 23 has a thickness of approximately 2.5 micrometers and is formed, for example, by spin coating. The embedding layer 23 contains or consists of benzocyclobutene. The first part of the embedding layer 23 is applied in such a way that it fills the openings 81 in the sacrificial layer 8, thus forming retention structures 4. The conversion elements 3 are embedded in the embedding layer 23.

[0117] As shown in Figure 10D, a second part of the embedding layer 23 and a substrate support 24 are applied to the first part of the embedding layer 23, for example by wafer bonding. The first part and the second part of the embedding layer 23 are thereby joined together, forming the structure shown in Figure 10E.

[0118] The support carrier 9 and the release layer 91 are removed using laser lift-offs, exposing one side of the conversion elements 3 (Figure 10F). The exposed side of the conversion elements 3 can be ground down and the emission properties of the conversion elements 3 can be determined. To obtain the device 1, the sacrificial layer is removed by etching (Figure 10G).

[0119] The device 1 thus obtained comprises the substrate carrier 24 and the embedding layer 23, which together form the substrate 2. The conversion elements 3 in the device 1 are each connected to the substrate 2 via a retaining structure 4, which in this case is a retaining post 41. The retaining structure 4 is formed from the material of the embedding layer 23, that is, from a material of the substrate 2. Between two adjacent conversion elements 3 is a dam 5, which is formed from the material of the embedding layer 23. The conversion elements 3 are embedded in the embedding layer 23. However, an air gap 21 is present between the embedding layer 23 and the conversion elements 3.

[0120] The method shown in Figures 11A to HD is an alternative embodiment for obtaining this device 1. As shown in Figure HA, the substrate carrier 24 with the embedding layer 23 is first provided. The substrate carrier 24 and the embedding layer 23 can be configured as described above.

[0121] The embedding layer 23 is then structured to form cavities, each containing a retaining structure 4. The retaining structures 4 are designed as retaining posts 41, as shown in Figure HB. A sacrificial layer 8 is placed in the cavities such that the retaining posts 41 remain free of the sacrificial layer 8 on the side facing away from the substrate support 24. Conversion elements 3 are then formed in the cavities to obtain the structure shown in Figure 110. A dam 5, made of the material of the embedding layer 23, is arranged between two adjacent conversion elements 3. To obtain the device 1, the sacrificial layer 8 is removed. The finished device 1 is shown in Figure HD. In the device 1, the conversion elements 3 can be flush with the embedding layer. However, it is also possible that the conversion elements 3 extend above the embedding layer or vice versa.

[0122] Figures 12A and 12B show a schematic sectional view and a schematic top view of a radiation-emitting component 10 according to one embodiment. The radiation-emitting component 10 has a transparent substrate 14 on which metallizations 15 are arranged. The metallizations 15 can form a grid. The metallizations have terminals 151 on which a radiation-emitting semiconductor chip 11 is arranged. The radiation-emitting semiconductor chip 11 is electrically connected to the terminals 151 via solder material 16. The metallization 15 comprises or consists of copper.

[0123] The radiation-emitting semiconductor chip 11 has an epitaxially grown semiconductor layer sequence containing an active layer. The active layer is configured to emit electromagnetic radiation of a first wavelength range. The first wavelength range lies in the ultraviolet to blue region of the electromagnetic spectrum. The electromagnetic radiation of the first wavelength range is emitted from the radiation-emitting semiconductor chip 11 via a radiation exit face. The radiation exit face faces away from the transparent support 14. The radiation-emitting semiconductor chip 11 is a micro-LED. The conversion element 3 is arranged at the radiation exit face. The conversion element 3 is configured as described in relation to Figures 1A and 1B. The conversion element 3 has a retention structure 4 or remnants of a retention structure 4.Residues of a holding structure 4 arise, for example, when the holding structure 4 is not formed from the material of the conversion element 3. In this case, however, the holding structure is formed from the material of the conversion element 3. The conversion element 3 can be attached to the radiation-emitting semiconductor chip 11 via an adhesive layer 12. The holding structure 4, which is a single holding post 41, is arranged such that it points away from the radiation-emitting semiconductor chip 11.

[0124] Conversion element 3 converts the electromagnetic radiation of the first wavelength range into electromagnetic radiation of a second wavelength range. The second wavelength range has wavelengths that are at least partially different from the wavelengths of the first wavelength range. In particular, the wavelengths of the second wavelength range have correspondingly lower energies than those of the first wavelength range.

[0125] Figures 13A and 13B show steps of a method for manufacturing a radiation-emitting component 10. In a first step, shown in Figure 13A, an adhesive layer 12 is applied to a device 1 such that it covers only conversion elements 3 of the device 1. The device 1 is configured as described in connection with Figures 1A and 1B. However, it is also possible for the device 1 to have the structure of one of the other embodiments.

[0126] The device 1 is irradiated with laser light 18 through the substrate 2 (Figure 13B). This introduces heat into the air gap 21 between the substrate 2 and the conversion element 3. The air heats up, expands, and thereby detaches the conversion element 3 from the substrate 2. This process can also be described as laser-induced forward transfer. Since the conversion element 3 is only in direct mechanical contact with the substrate 2 via the holding structure 4, less energy is required compared to other methods.

[0127] Below the conversion element 3 is a radiation-emitting semiconductor chip 11, which is mounted on a transparent substrate 14 with copper metallizations 15. Due to the adhesive layer 12, the conversion element 3, detached from the substrate 2, can adhere to the radiation-emitting semiconductor chip 11. This forms the radiation-emitting component 10. Thus, by means of the laser-induced forward transfer, a conversion element 3 is transferred from the device 1 to the radiation-emitting semiconductor chip 11.

[0128] As shown in Figures 14A and 14B, as well as 15A and 15B, the conversion elements 3 can also first be transferred from the device 1 onto a transfer film 13, which is mounted in a clamping frame 131. The transfer film 13 has, in particular, adhesive properties for the conversion elements 3. The transfer is carried out, as shown in Figure 14B, via laser-induced forward transfer with laser light 18. Alternatively, the conversion elements 3 can be transferred using film transfer. In this case, as shown in Figure 15A, the transfer film 13 is placed onto the conversion elements 3 of the device 1. Due to the adhesive properties of the transfer film 13, the conversion elements 3 remain adhered to the transfer film 13. This allows the conversion elements 3 to be detached together from the substrate 2, as shown in Figure 15B.In comparison, in laser-induced forward transfer, each conversion element 3 is individually transferred onto the transfer foil 13.

[0129] The conversion elements 3 can then be applied to a radiation-emitting semiconductor chip 11 using the transfer film 13. For example, this transfer of the conversion elements 3 from the transfer film 13 to the radiation-emitting semiconductor chip 11 is carried out with the aid of a stamp.

[0130] The features and embodiments described in connection with the figures can be combined with one another according to further embodiments, even if not all combinations are explicitly described. Furthermore, the embodiments described in connection with the figures can alternatively or additionally exhibit further features as described in the general section.

[0131] This patent application claims priority from German patent application 10 2024 117 276 . 2, the disclosure content of which is hereby incorporated by reference. The invention is not limited to the description by reference to the exemplary embodiments. Rather, the invention encompasses every new feature as well as every combination of features, which in particular includes every combination of features in the patent claims, even if that feature or combination itself is not explicitly stated in the patent claims or exemplary embodiments.

[0132] Reference character list

[0133] 1 Device

[0134] 2 Substrat

[0135] 21 air gap

[0136] 22 Absorption layer

[0137] 23 Embedding layer

[0138] 24 substrate carriers

[0139] 25 In-depth study

[0140] 3 Conversion element

[0141] 31 Conversion material layer

[0142] 4 Support structure

[0143] 41 support posts

[0144] 42 Restraint strap

[0145] 5 Dam

[0146] 6 dielectric coating

[0147] 7 Passivation

[0148] 8 Victim layer

[0149] 81 Opening

[0150] 9 aid workers

[0151] 91 Delamination layer

[0152] 10 radiation-emitting components

[0153] 11 radiation-emitting semiconductor chip

[0154] 12 adhesive layers

[0155] 13 Transfer foil

[0156] 131 tension frames

[0157] 14 transparent carriers

[0158] 15 Metallization

[0159] 151 Junction

[0160] 16 Solder material

[0161] 17 Mask

[0162] 18 Laser radiation

Claims

Patent claims 1. Device (1) with - a substrate (2) and - a variety of conversion elements (3) , wherein - the conversion elements (3) are each connected to the substrate (2) via a holding structure (4) and - the support structure (4) parallel to the main extension plane of the conversion element (3) has a smaller cross-sectional area than the associated conversion element (3).

2. Device (1) according to the preceding claim, wherein the conversion elements (3) are mechanically connected to the substrate (2) only via the respective holding structure (4).

3. Device (1) according to one of the preceding claims, wherein the holding structure (4) is formed from a material of the conversion elements (3).

4. Device (1) according to one of claims 1 or 2, wherein the holding structure (4) is formed from a material of the substrate (2).

5. Device (1) according to one of the preceding claims, wherein the holding structure (4) has a holding post (41).

6. Device (1) according to one of the preceding claims, wherein the holding structure (4) comprises a plurality of holding posts (41).

7. Device (1) according to one of the preceding claims, wherein the holding structure (4) comprises holding straps (42).

8. Device (1) according to one of the preceding claims, wherein a dam (5) is arranged between two conversion elements (3).

9. Device (1) according to one of the preceding claims, wherein the conversion elements (3) have a dielectric coating (6).

10. Device (1) according to one of the preceding claims, wherein the conversion elements (3) are each at least partially surrounded by a passivation (7).

11. Device (1) according to one of the preceding claims, wherein the conversion elements (3) are embedded in the substrate (2).

12. Method for manufacturing a device (1) comprising the steps: - Arranging a structured sacrificial layer (8) between a substrate (2) and a variety of conversion elements (3) , - Removal of the structured sacrificial layer (8) so that the conversion elements (3) are each connected to the substrate (2) via a holding structure (4), wherein the holding structure (4) parallel to the main extension plane of the conversion element (3) has a smaller cross-sectional area than the associated conversion element (3).

13. The method of claim 12, wherein the arrangement of the structured sacrificial layer (8) between the substrate (2) and the plurality of conversion elements (3) comprises the following steps: - Application of the structured sacrificial layer (8) to the substrate (2) and - Applying the multitude of conversion elements (3) to the structured sacrificial layer (8) .

14. The method of claim 12, wherein the arrangement of the structured sacrificial layer (8) between the substrate (2) and the plurality of conversion elements (3) comprises the following steps: - Applying the structured sacrificial layer (8) to a multitude of conversion elements (3) on an auxiliary carrier (9) , - Application of an embedding layer (23) and a substrate carrier (24) onto the structured sacrificial layer (8) and - Relieving the auxiliary carrier (9) .

15. Radiation-emitting component (10) with - a radiation-emitting semiconductor chip (11) and - a conversion element (3) , wherein - the conversion element (3) has a holding structure (4) or remnants of a holding structure (4) and - the support structure (4) or the remains of the support structure parallel to the main extension plane of the conversion element (3) have a smaller cross-sectional area than the conversion element (3).

16. Radiation-emitting component (10) according to claim 15, wherein the radiation-emitting semiconductor chip (11) is or comprises a micro-LED.

17. Method for producing a radiation-emitting Components (10) with the following steps: - Providing a device (1) with a plurality of conversion elements (3) according to any one of claims 1 to 11 and - Transferring a conversion element (3) from the device (1) to a radiation-emitting semiconductor chip (11) .

18. Method according to claim 17, further comprising applying an adhesive layer (12) to the plurality of conversion elements (3) prior to transferring the conversion element (3).

19. Method according to claim 17 or 18, wherein the transfer of the conversion element (3) from the device (1) to the radiation-emitting semiconductor chip (11) is carried out by means of laser-induced forward transfers.

20. Method according to claim 17 or 18, wherein the transfer of the conversion element (3) from the device (1) to the radiation-emitting semiconductor chip (11) comprises the following steps: - Transferring the multitude of conversion elements (3) onto a transfer film (13) and - Transferring a conversion element (3) from the transfer foil (13) to the radiation-emitting semiconductor chip (11) .

Images