Half-bridge power module, inverter, and vehicle

By setting an insulating substrate and adjusting the source connection of the switching transistor in the half-bridge power module, the oscillation and stability problems of SiC chips in parallel are solved, achieving better current sharing characteristics and stability, and avoiding increased costs.

WO2026001831A1PCT designated stage Publication Date: 2026-01-02SHANGHAI LIXIANG AUTOMOBILE CO LTD
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Patent Information

Application Number
PCT/CN2025/102157
Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
Priority Date
2024-06-25
Filing Date
2025-06-19
Publication Date
2026-01-02

AI Technical Summary

Technical Problem

When multiple SiC chips are connected in parallel to form a power module, problems such as oscillation, poor current sharing performance and stability often occur between the chips, and the solution of increasing the gate resistor will increase the cost.

Method used

By setting an insulating substrate, upper bridge arm, lower bridge arm, first cladding layer, second cladding layer, and third cladding layer in a half-bridge power module, and connecting the sources of each switching transistor, the current transmission path is adjusted to balance the inductance or voltage and reduce the interconnection inductance.

Benefits of technology

The current sharing characteristics of the half-bridge power module have been improved, reducing the possibility of oscillation, improving stability and reliability, while avoiding increased costs.

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Abstract

The present application relates to the technical field of power modules. Provided are a half-bridge power module, an inverter, and a vehicle. The half-bridge power module comprises: an insulating substrate, an upper bridge arm, a lower bridge arm, a first coating layer, a second coating layer and a third coating layer, wherein the upper bridge arm comprises a plurality of first upper switch transistors and a plurality of second upper switch transistors, and the lower bridge arm comprises a plurality of first lower switch transistors and a plurality of second lower switch transistors; the first upper switch transistors and the second upper switch transistors are all arranged on the first coating layer, and the first lower switch transistors and the second lower switch transistors are all arranged on the second coating layer; source electrodes of all the first upper switch transistors are connected, and source electrodes of all the second upper switch transistors are connected; and source electrodes of all the first lower switch transistors are connected, and source electrodes of all the second lower switch transistors are connected. In the solution of the present application, by means of connecting source electrodes of any group of switch transistors that are connected in parallel, the problem of the interconnection inductance between the switch transistors being relatively large can be avoided, thereby achieving the effects of improving the current-sharing characteristics of a half-bridge power module and reducing the possibility of oscillation.
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Description

Half-bridge power module, inverter and vehicle

[0001] Cross-reference to related applications

[0002] The present application claims priority to the Chinese patent application No. 202421476580.7, filed on June 25, 2024, and entitled "Half-bridge power module, inverter and vehicle", the content of which is incorporated herein by reference in its entirety. TECHNICAL FIELD

[0003] The present application relates to the technical field of power modules, and in particular to a half-bridge power module, an inverter and a vehicle. BACKGROUND

[0004] With the development of electric vehicle technology, the application demand for high-voltage power modules is increasing. Since high-voltage Insulate-Gate Bipolar Transistor (IGBT) and high-voltage silicon carbide (SiC) have excellent performance, high-voltage IGBT and high-voltage SiC have become the best power semiconductor solution at present.

[0005] In the related art, since the area of the SiC chip is relatively small, the current that can pass through a single SiC chip is relatively small. In order to achieve high output power, such as 150 kilowatts (KW) to 250 KW, generally, the related skilled person will connect multiple chips in parallel to provide a larger current.

[0006] However, in the case of connecting multiple chips in parallel to form a power module, oscillation often occurs between the multiple chips, and the current sharing performance and stability are poor.

[0007] Utility model content

[0008] In order to solve the above technical problems, the present application provides a half-bridge power module, an inverter and a vehicle.

[0009] In a first aspect, an embodiment of the present application provides a half-bridge power module, comprising: an insulating substrate, an upper bridge arm, a lower bridge arm, a first cover layer, a second cover layer and a third cover layer; the upper bridge arm comprises a plurality of first upper switching tubes and a plurality of second upper switching tubes; the lower bridge arm comprises a plurality of first lower switching tubes and a plurality of second lower switching tubes.

[0010] The first cover layer, the second cover layer and the third cover layer are respectively attached to the upper surface of the insulating substrate.

[0011] The first cladding is connected with the second cladding through the upper bridge arm, the second cladding is connected with the third cladding through the lower bridge arm, the first cladding is used for connecting a positive electrode of a power supply, the second cladding is used for outputting electric energy to an external device, and the third cladding is used for connecting a negative electrode of the power supply.

[0012] The first upper switch tube and the second upper switch tube are respectively arranged on the first cladding, and the first lower switch tube and the second lower switch tube are respectively arranged on the second cladding.

[0013] Optionally, the first cladding comprises a first sub-cladding and a second sub-cladding.

[0014] The first upper switch tube is arranged on the first sub-cladding, and the second upper switch tube is arranged on the second sub-cladding.

[0015] Optionally, the half-bridge power module further comprises at least one first interconnecting line.

[0016] The first end of the first interconnecting line is connected with the first sub-cladding, and the second end of the first interconnecting line is connected with the second sub-cladding.

[0017] Optionally, the half-bridge power module further comprises a first connecting clamp.

[0018] The first connecting end of the first connecting clamp is connected with the first upper switch tube, the second connecting end of the first connecting clamp is connected with the second upper switch tube, and the third connecting end of the first connecting clamp is connected with the second cladding.

[0019] An area close to the third cladding on the first connecting clamp is provided with a notch.

[0020] Optionally, the half-bridge power module further comprises a second connecting clamp.

[0021] The first connecting end of the second connecting clamp is connected with the first lower switch tube, the second connecting end of the second connecting clamp is connected with the second lower switch tube, and the third connecting end of the second connecting clamp is connected with the third cladding.

[0022] An area close to the first cladding on the second connecting clamp is provided with a notch.

[0023] Optionally, the half-bridge power module further comprises a plurality of second interconnecting lines.

[0024] At least one second interconnection line is arranged between the sources of each of the first upper switching tubes, between the sources of each of the second upper switching tubes, between the sources of each of the first lower switching tubes, and between the sources of each of the second lower switching tubes.

[0025] Optionally, each of the first upper switching tubes is symmetrically arranged with each of the second upper switching tubes.

[0026] Optionally, each of the first lower switching tubes is symmetrically arranged with each of the second lower switching tubes.

[0027] Optionally, a current transmission distance between one switching tube of any group of switching tubes in the upper bridge arm and an input point of the positive pole of the power supply is negatively related to a current transmission distance between the connection points of the first coating layer and the second coating layer.

[0028] Optionally, a current transmission distance between one switching tube of any group of switching tubes in the lower bridge arm and the connection points of the first coating layer and the second coating layer is negatively related to a current transmission distance between the connection points of the second coating layer and the third coating layer.

[0029] In a second aspect, the embodiments of the present application further provide an inverter, comprising at least one half-bridge power module according to any one of the half-bridge power modules in the first aspect.

[0030] In a third aspect, the embodiments of the present application further provide a vehicle, comprising the inverter according to the second aspect.

[0031] Compared with the prior art, the technical solutions provided by the embodiments of the present application have the following advantages:

[0032] The half-bridge power module provided by the embodiments of the present application comprises an insulating substrate, an upper bridge arm, a lower bridge arm, a first coating layer, a second coating layer, and a third coating layer. The upper bridge arm comprises a plurality of first upper switching tubes and a plurality of second upper switching tubes, and the lower bridge arm comprises a plurality of first lower switching tubes and a plurality of second lower switching tubes. The first coating layer is connected with the second coating layer through the upper bridge arm, the second coating layer is connected with the third coating layer through the lower bridge arm, the first coating layer is used for connecting a positive pole of a power supply, the second coating layer is used for outputting electric energy to an external device, and the third coating layer is used for connecting a negative pole of the power supply. Each of the first upper switching tubes and each of the second upper switching tubes are arranged on the first coating layer, and each of the first lower switching tubes and each of the second lower switching tubes are arranged on the second coating layer.

[0033] The source of each first upper switch tube is connected, the source of each second upper switch tube is connected, the source of each first lower switch tube is connected, and the source of each second lower switch tube is connected. In this way, when inductive coupling occurs in each group of switch tubes, or the inductance or voltage corresponding to the transmission line of each switch tube in the same group is not equal, the inductance or voltage can be balanced through the connection between the sources of each switch tube in the group, thereby reducing the source inductance of each switch tube.

[0034] In this way, the problem of large interconnection inductance between switch tubes can be avoided, thereby improving the current sharing characteristics of the half-bridge power module and reducing the possibility of oscillation. Other features of the present application will become apparent from the following description.

[0035] The above description is only a summary of the technical solutions of the present application. In order to more clearly understand the technical means of the present application, the specific embodiments of the present application can be implemented according to the content of the description, and in order to make the above and other purposes, features and advantages of the present application more obvious and easy to understand, the following specific embodiments of the present application are described. BRIEF DESCRIPTION OF DRAWINGS

[0036] The accompanying drawings incorporated in and forming a part of the specification, illustrate embodiments consistent with the present application and serve to explain the principles of the present application together with the description.

[0037] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the drawings needed to be used in the embodiments or prior art description. Obviously, for those skilled in the art, other drawings can also be obtained from these drawings without creative labor.

[0038] Fig. 1 is a structural schematic diagram of a half-bridge power module provided by an embodiment of the present application;

[0039] Fig. 2 is a structural schematic diagram of another half-bridge power module provided by an embodiment of the present application;

[0040] Fig. 3 is a structural schematic diagram of another half-bridge power module provided by an embodiment of the present application;

[0041] Fig. 4 is a structural schematic diagram of another half-bridge power module provided by an embodiment of the present application;

[0042] Fig. 5 is a structural schematic diagram of another half-bridge power module provided by an embodiment of the present application;

[0043] Fig. 6 is a structural schematic diagram of an inverter provided by an embodiment of the present application. DETAILED DESCRIPTION

[0044] In order to enable a more clear understanding of the above-mentioned objects, features and advantages of the present application, the following will further describe the solutions of the present application. It should be noted that the embodiments of the present application and the features in the embodiments can be combined with each other without conflict. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative labor fall within the scope of protection of the present application.

[0045] In the following description, a large number of specific details are set forth in order to facilitate a thorough understanding of the present application, but the present application can also be implemented in other different manners from those described herein; obviously, the embodiments in the description are only a part of the embodiments of the present application, rather than all the embodiments.

[0046] Generally, since the area of the SiC chip is relatively small, the current that can pass through a single SiC chip is relatively small, and in order to achieve a high output power, such as 150 kilowatts (KW) to 250 KW, generally, a person skilled in the art will connect multiple chips in parallel to provide a larger current. However, in the case of connecting multiple chips in parallel to form a power module, there are often problems of oscillation, poor current sharing performance and stability between multiple chips.

[0047] In addition, the general method in the related art is to increase the gate resistance of each switch tube to solve the gate oscillation problem caused by asymmetry between the chips connected in parallel, but this solution will lead to an increase in cost. The above solution also has the problem of being unable to balance cost and stability.

[0048] Therefore, the embodiments of the present application provide a half-bridge power module, which is provided with an insulating substrate, an upper bridge arm, a lower bridge arm, a first cover layer, a second cover layer and a third cover layer. The upper bridge arm includes a plurality of first upper switch tubes and a plurality of second upper switch tubes, and the lower bridge arm includes a plurality of first lower switch tubes and a plurality of second lower switch tubes. The first cover layer is connected to the second cover layer through the upper bridge arm, the second cover layer is connected to the third cover layer through the lower bridge arm, the first cover layer is used for connecting a positive electrode of a power supply, the second cover layer is used for outputting electric energy to an external device, and the third cover layer is used for connecting a negative electrode of the power supply. Each first upper switch tube and each second upper switch tube are arranged on the first cover layer, and each first lower switch tube and each second lower switch tube are arranged on the second cover layer. The source of each first upper switch tube is connected, the source of each second upper switch tube is connected, the source of each first lower switch tube is connected, and the source of each second lower switch tube is connected. By connecting the sources of any group of parallel switch tubes, the problem of large mutual inductance between the switch tubes can be avoided, and the effects of improving the current sharing characteristics of the half-bridge power module and reducing the possibility of oscillation can be achieved.

[0049] The half-bridge power module provided in the application can be used for power conversion, such as converting input direct current into alternating current output, and can be used in an inverter in particular.

[0050] The inverter can be a single-phase inverter, a two-phase inverter or a three-phase inverter. For example, if the inverter is a single-phase inverter, one half-bridge power module can be included in the inverter. If the inverter is a three-phase inverter, three half-bridge power modules can be included in the inverter to convert each phase respectively. The embodiments of the application do not limit this.

[0051] The half-bridge power module provided in the embodiments of the application will be described below with reference to the accompanying drawings.

[0052] In one embodiment, as shown in FIG. 1, a half-bridge power module 100 is provided, which includes an insulating substrate 101, an upper bridge arm, a lower bridge arm, a first cover layer 102, a second cover layer 103 and a third cover layer 104.

[0053] The upper bridge arm includes a plurality of first upper switch tubes Q1 and a plurality of second upper switch tubes Q2, and the lower bridge arm includes a plurality of first lower switch tubes Q3 and a plurality of second lower switch tubes Q4.

[0054] The first cover layer 102, the second cover layer 103 and the third cover layer 104 are respectively attached to the upper surface of the insulating substrate 101.

[0055] The first cover layer 102 is connected to the second cover layer 103 through the upper bridge arm, the second cover layer 103 is connected to the third cover layer 104 through the lower bridge arm, the first cover layer 102 is used for connecting a positive electrode of a power supply, the second cover layer 103 is used for outputting electric energy to an external device, and the third cover layer 104 is used for connecting a negative electrode of the power supply.

[0056] Each first upper switch tube Q1 and each second upper switch tube Q2 are arranged on the first cover layer 102, and each first lower switch tube Q3 and each second lower switch tube Q4 are arranged on the second cover layer 103.

[0057] In addition, the source electrodes of each first upper switch tube Q1 are connected, the source electrodes of each second upper switch tube Q2 are connected, the source electrodes of each first lower switch tube Q3 are connected, and the source electrodes of each second lower switch tube Q4 are connected.

[0058] In the embodiment, the insulating substrate 101 can be a ceramic substrate or a substrate made of an insulating material. The first cover layer 102, the second cover layer 103 and the third cover layer 104 can be cover layers for conducting electricity, which can be made of a conductive material such as metal, for example, a copper cover layer, an aluminum cover layer, a tin cover layer and the like, and the embodiments of the application do not limit this.

[0059] In the embodiment, the first upper switch Q1, the second upper switch Q2, the first lower switch Q3 and the second lower switch Q4 can be two or more in number to ensure that multiple switches in parallel can be achieved.

[0060] Generally, the number of the first upper switch Q1 and the number of the second upper switch Q2 need to be consistent, so that the current in the upper bridge arm can be relatively balanced. The number of the first lower switch Q3 and the number of the second lower switch Q4 need to be consistent, so that the current in the lower bridge arm can be relatively balanced.

[0061] In the embodiment, the first upper switch Q1, the second upper switch Q2, the first lower switch Q3 and the second lower switch Q4 can be SiC semiconductor switches. The switches can be N-channel or P-channel according to actual needs, which is not limited in the embodiment.

[0062] Specifically, the first cover layer 102 can be connected with the second cover layer 103 through the source of each first upper switch Q1 and the source of each second upper switch Q2 in the upper bridge arm. The second cover layer 103 can be connected with the third cover layer 104 through the source of each first lower switch Q3 and the source of each second lower switch Q4 in the lower bridge arm.

[0063] Generally, if the source of each switch is arranged on the upper surface of the switch, that is, the first cover layer 102 can be connected with the second cover layer 103 through the upper surface of each first upper switch Q1 and the upper surface of each second upper switch Q2.

[0064] In addition, the first cover layer 102 can be connected with the second cover layer 103 through the corresponding connection line or connection device, and the second cover layer 103 can be connected with the third cover layer 104 through the corresponding connection line or connection device, which is not limited in the embodiment.

[0065] In the embodiment, the power supply can be a direct current power supply, and the external device can be any possible electrical device. If the half-bridge power module 100 is applied to an inverter in a vehicle, the power supply can be a power battery in the vehicle, and the external device can be a motor in the vehicle.

[0066] For example, the positive pole of the power supply can be connected with the first cover layer 102 through a “T+ copper bar”, and output voltage V1+ and voltage V2+ to the first cover layer 102 through the “T+ copper bar”. The negative pole of the power supply can be connected with the third cover layer 104 through a “T- copper bar”, and output voltage V- to the third cover layer 104 through the “T- copper bar”.

[0067] Generally, the voltage V1+ and the voltage V2+ can be output to the first cladding layer 102 at the same time, and the voltage levels of the voltage V1+ and the voltage V2+ can be the same.

[0068] For another example, the second cladding layer 103 can be connected with the external device by a flying wire or the like, and the external device can also be connected with the negative electrode of the half-bridge power module 100 by a flying wire or the like to form a loop. The embodiments of the present application do not make any limitation in this regard.

[0069] In one of the embodiments, the first upper switch tubes Q1 are symmetrically arranged with the second upper switch tubes Q2 respectively, and the first lower switch tubes Q3 are symmetrically arranged with the second lower switch tubes Q4 respectively.

[0070] For example, continuing to refer to FIG. 1, three first upper switch tubes Q1, three second upper switch tubes Q2, three first lower switch tubes Q3 and three second lower switch tubes Q4 are shown in FIG. 1. As shown in FIG. 1, for example, in the direction from left to right, the first first upper switch tube Q1 is symmetric with the first second upper switch tube Q2, the second first upper switch tube Q1 is symmetric with the second second upper switch tube Q2, and the third first upper switch tube Q1 is symmetric with the third second upper switch tube Q2. In addition, the first first lower switch tube Q3 is symmetric with the first second lower switch tube Q4, the second first lower switch tube Q3 is symmetric with the second second lower switch tube Q4, and the third first lower switch tube Q3 is symmetric with the third second lower switch tube Q4.

[0071] In addition, the symmetry of the first upper switch tubes Q1 and the second upper switch tubes Q2 can mean that any first upper switch tube Q1 and the corresponding second upper switch tube Q2 are symmetric with each other with a straight line passing through the midpoint of the connecting line of the two tubes and being perpendicular to the connecting line of the two tubes as the axis of symmetry, and the embodiments of the present application do not make any limitation in this regard.

[0072] In one of the embodiments, the current transmission distance between one switch tube of any group of switch tubes in the upper bridge arm and the input point of the positive electrode of the power supply is negatively related to the current transmission distance between the connection points of the first cladding layer 102 and the second cladding layer 103.

[0073] The current transmission distance between one switch tube of any group of switch tubes in the lower bridge arm and the connection points of the first cladding layer 102 and the second cladding layer 103 is negatively related to the current transmission distance between the connection points of the second cladding layer 103 and the third cladding layer 104.

[0074] Specifically, the any group of switch tubes in the upper bridge arm can refer to the first upper switch tubes Q1 or the second upper switch tubes Q2. The any group of switch tubes in the lower bridge arm can refer to the first lower switch tubes Q3 or the second lower switch tubes Q4.

[0075] The input point of the positive electrode of the power supply can be a point where the voltage V1+ or the voltage V2+ is input on the first coating layer 102.

[0076] The distance between the switch tube in any group and the input point of the positive electrode of the power supply is the distance between the switch tube in any group and the nearest input point. For example, the distance between the first upper switch tube Q1 and the input point of the positive electrode of the power supply is the distance between the first upper switch tube Q1 and the point of the input voltage V1+.

[0077] The connection point of the first coating layer 102 and the second coating layer 103 can be point D1 in FIG. 1, and the number of point D1 can be one or more. For example, as shown in FIG. 1, there are three connection points between the first coating layer 102 and the second coating layer 103, and each connection point corresponds to each first upper switch tube Q1 or each second upper switch tube Q2.

[0078] The connection point of the second coating layer 103 and the third coating layer 104 can be point D2 in FIG. 1, and the number of point D2 can also be one or more. For example, as shown in FIG. 1, there are three connection points between the second coating layer 103 and the third coating layer 104, and each connection point corresponds to each first lower switch tube Q3 or each second lower switch tube Q4.

[0079] That is, the farther the current transmission distance between any switch tube and the input point of the positive electrode of the power supply, the closer the current transmission distance between the switch tube and the connection point of the first coating layer 102 and the second coating layer 103. The closer the current transmission distance between any switch tube and the connection point of the first coating layer 102 and the second coating layer 103, the farther the current transmission distance between the switch tube and the connection point of the second coating layer 103 and the third coating layer 104.

[0080] It is worth noting that in the embodiment, the first coating layer 102, the second coating layer 103, and the third coating layer 104 can be attached to the upper surface of the insulating substrate 101 in any possible way, such as engraving, pasting, and the like. Each switch tube can be arranged on the corresponding coating layer in any possible way, such as soldering each switch tube on the coating layer by using tin paste. That is, only the purpose of fixation and attachment needs to be ensured, and the specific attachment and / or arrangement of each component is not limited in the embodiment.

[0081] It should be noted that the current flow of the half-bridge power module 100 provided in the embodiment is as follows:

[0082] After the positive pole of the power supply outputs the voltage V1+ and V2+ to the first coating 102, the current flows from the connection between the positive pole of the power supply and the first coating 102 to each first upper switch tube Q1, and then flows to the connection point D1 between the first coating 102 and the second coating 103 through each first upper switch tube Q1. Meanwhile, the current flows from the connection between the positive pole of the power supply and the first coating 102 to each second upper switch tube Q2, and then flows to the connection point D1 between the first coating 102 and the second coating 103 through each second upper switch tube Q2.

[0083] Then the current flows to the second coating 103 through each connection point D1 to output alternating current to the external device, and then flows to each first lower switch tube Q3 and each second lower switch tube Q4 through each connection point D2 between the second coating 103 and the third coating 104. Then the current flows to each connection point D2 between the second coating 103 and the third coating 104 through each first lower switch tube Q3 and each second lower switch tube Q4.

[0084] The current flows to the third coating 104 through each connection point D2, and since the third coating 104 is connected to the negative pole of the power supply, the current finally flows to the negative pole of the power supply, forming a complete loop.

[0085] It is worth noting that since the switch tubes are connected in parallel, parasitic inductance coupling may occur between the switch tubes, which may cause large parasitic inductance between the switch tubes. However, in the embodiment of the present application, the source connection of each first upper switch tube Q1, the source connection of each second upper switch tube Q2, the source connection of each first lower switch tube Q3, and the source connection of each second lower switch tube Q4 are connected respectively. In this way, when inductance coupling occurs between the switch tubes in each group, or the inductance or voltage corresponding to the transmission line of each switch tube in the same group is not equal, the inductance or voltage can be balanced through the connection between the sources of the switch tubes in the group, thereby reducing the source inductance of the switch tubes.

[0086] In this way, the problem of large interconnection inductance between the switch tubes can be avoided, thereby improving the current sharing characteristics of the half-bridge power module and reducing the possibility of oscillation.

[0087] In addition, it should be noted that since the installation positions of the switch tubes on the half-bridge power module 100 are different, the flow paths of the current flowing through the switch tubes to the coatings are also different. The longer the current transmission path, the larger the inductance and / or parasitic parameters, which may result in different equivalent inductances of the switch tubes.

[0088] In the embodiment, the current transmission distance between any upper switch tube and the positive input point of the power supply is negatively related to the current transmission distance between any upper switch tube and the connecting point of the first coating 102 and the second coating 103. The current transmission distance between any lower switch tube and the connecting point of the first coating 102 and the second coating 103 is negatively related to the current transmission distance between any lower switch tube and the connecting point of the second coating 103 and the third coating 104. In other words, the transmission path of the current flowing through each switch tube in the same group of switch tubes is adjusted by misaligning each switch tube.

[0089] In this way, the transmission path of the current flowing through each switch tube in the same group of switch tubes is adjusted by misaligning each switch tube in the same group of switch tubes, thereby reducing the parasitic parameters (parasitic inductance and / or parasitic capacitance) of each switch tube and reducing the difference between the switch tubes in the same group.

[0090] In addition, each first upper switch tube Q1 is symmetrically arranged with each second upper switch tube Q2, and each first lower switch tube Q3 is symmetrically arranged with each second lower switch tube Q4. In other words, the switch tubes in the same group of switch tubes are symmetrically arranged in the same bridge arm, thereby reducing the difference between the switch tubes in the same group of switch tubes and ensuring that the dynamic current of each switch tube is balanced.

[0091] In this way, the current sharing characteristics of the parallel switch tubes can be improved.

[0092] It should be understood that the number of the first upper switch tube Q1, the second upper switch tube Q2, the first lower switch tube Q3 and the second lower switch tube Q4 in the drawings provided by the embodiment is 3, but the structure shown in the drawings of the embodiment is only a possible example of the half-bridge power module 100, and does not represent that the half-bridge power module provided by the embodiment can only be arranged in the structure listed in the drawings. The embodiment does not limit this.

[0093] In a possible implementation, referring to FIG. 2, the first coating 102 includes a first sub-coating 1021 and a second sub-coating 1022.

[0094] Each first upper switch tube Q1 is arranged on the first sub-coating 1021, and each second upper switch tube Q2 is arranged on the second sub-coating 1022.

[0095] In the embodiment, the positive pole of the power supply can be connected to the first sub-coating 1021 and the second sub-coating 1022, respectively.

[0096] For example, the power supply can output a voltage V1+ to the first sub-coating 1021 and output a voltage V2+ to the second sub-coating 1022.

[0097] It is worth noting that, since there is no direct connection between the first sub-coating 1021 and the second sub-coating 1022, when the power supply outputs the voltage V1+ and the voltage V2+ to the half-bridge power module 100, interference between the voltage V1+ and the voltage V2+ can be avoided, and the voltage V1+ can also be prevented from directly flowing to each second upper switch tube Q2, or the voltage V2+ can also be prevented from directly flowing to each first upper switch tube Q1.

[0098] In this way, the stability and reliability of the half-bridge power module 100 can be improved.

[0099] In one possible manner, continuing to refer to FIG. 2, the half-bridge power module 100 further includes at least one first interconnection line L1.

[0100] The first ends of the first interconnection lines L1 are respectively connected to the first sub-coating 1021, and the second ends of the first interconnection lines L1 are respectively connected to the second sub-coating 1022.

[0101] In this embodiment, the number of first interconnection lines L1 can be any positive integer. Generally, as many first interconnection lines L1 as possible can be provided, and the actual layout and space conditions can be used for specific setting, which is not limited in the present embodiment.

[0102] The first interconnection lines L1 can be conductive connection lines, such as metal lines such as copper lines, aluminum lines, or other non-metal lines that can conduct electricity. The first interconnection lines L1 can be a kind of bonding wire, which is not limited in the present embodiment.

[0103] For example, as shown in FIG. 2, five first interconnection lines L1 are provided between the first sub-coating 1021 and the second sub-coating 1022. Specifically, three first interconnection lines L1 are provided on the left side of each connection point D1, and two first interconnection lines L1 are provided on the right side of each connection point D1. However, this is only an example of the setting position of the first interconnection lines L1, and does not mean that the half-bridge power module 100 provided in the present embodiment can only be set in the example of five first interconnection lines L1.

[0104] It is worth noting that, generally, when the switch tubes are arranged on the corresponding coating, the drain of each switch tube is connected to the corresponding coating. That is, the drain of each first upper switch tube Q1 is connected to the first sub-coating 1021, and the drain of each second upper switch tube Q2 is connected to the second sub-coating 1022.

[0105] So, the drain of each second upper switch tube Q2 and the drain of each first upper switch tube Q1 can be connected through each first interconnection line L1, so that the drain inductance of each first upper switch tube Q1 and each second upper switch tube Q2 can be reduced, and the steady-state current sharing performance between each first upper switch tube Q1 and each second upper switch tube Q2 can be improved.

[0106] In a possible implementation, referring to FIG. 3, the half-bridge power module 100 further includes a first connecting clamp J1.

[0107] Each first connecting end of the first connecting clamp J1 is connected with each first upper switch tube Q1, each second connecting end of the first connecting clamp J1 is connected with each second upper switch tube Q2, and a third connecting end of the first connecting clamp J1 is connected with the second cladding layer 103.

[0108] An area of the first connecting clamp J1 close to the third cladding layer 104 is provided with a notch.

[0109] In this embodiment, the first connecting clamp J1 can be a conductive connecting clamp, and specifically can be a metal clamp such as a copper clamp or other non-metal clamp that can conduct electricity.

[0110] In addition, the first connecting clamp J1 can be specifically connected with the source of each first upper switch tube Q1 and each second upper switch tube Q2, so as to improve the consistency of the equivalent inductance between the gate and the source of each first upper switch tube Q1 and each second upper switch tube Q2 in parallel.

[0111] In addition, since the current flowing from each first upper switch tube Q1 and each second upper switch tube Q2 to the first connecting clamp J1 also needs to flow to each first lower switch tube Q3 and each second lower switch tube Q4, the notch on the first connecting clamp J1 is specifically provided in an area close to each first lower switch tube Q3 and each second lower switch tube Q4.

[0112] In this embodiment, the shape and size of the notch on the first connecting clamp J1 can be set by a person skilled in the art according to actual needs, for example, as shown in FIG. 3, a corresponding notch can also be provided at the middle position of the first connecting clamp J1 to adjust the current transmission path corresponding to different switch tubes, which can be adjusted according to the installation position of each upper switch tube. The present embodiment does not limit this.

[0113] It is worth noting that, as shown in FIG. 3, the third connecting end of the first connecting clamp J1 can be clamped on the second cladding layer 103 to achieve the same function as each connecting point D1.

[0114] As mentioned above, due to the difference in installation position of each switch tube on the half-bridge power module 100, the current flowing path of the current flowing through each switch tube to each cladding is also different. For example, the current generated by the power output voltage V1+ flows through the first first upper switch tube Q1 from left to right, and the transmission distance of the current to each first lower switch tube Q3 and / or each second lower switch tube Q4 through the corresponding connection point D1 is smaller than the transmission distance of the current to each first lower switch tube Q3 and / or each second lower switch tube Q4 through the third first upper switch tube Q1 and the corresponding connection point D1. Therefore, the parasitic inductance generated by the current flowing through each first upper switch tube Q1 and / or each second upper switch tube Q2 is also different.

[0115] It is worth noting that due to the notch provided on the first connecting clip J1 near the region close to the first lower switch tube Q3, the second lower switch tube Q4, and / or the region close to the third cladding 104, at least the current needs to be transmitted along the edge of the notch when the current flows through the first upper switch tube Q1 or the second upper switch tube Q2 closest to the first lower switch tube Q3, the second lower switch tube Q4, and / or the third cladding 104.

[0116] And the path of the current transmitted along the edge of the notch becomes longer than the transmission path without the notch, so that the transmission path distance of the current flowing through each first upper switch tube Q1 or each second upper switch tube Q2 to the first lower switch tube Q3, the second lower switch tube Q4 can be made as close as possible, and the relative positions of each first upper switch tube Q1 or each second upper switch tube Q2 can also be set more flexibly.

[0117] In this way, the corresponding parasitic parameters of each switch tube can be reduced, and the differences between the same group of switch tubes can be reduced, so that the dynamic current when each first upper switch tube Q1 and each second upper switch tube Q2 is turned on is more balanced. In addition, since the first connecting clip J1 has a larger heat dissipation area than the connecting wire, the heat dissipation capacity of the half-bridge power module 100 can also be improved.

[0118] In a possible implementation, referring to FIG. 4, the half-bridge power module 100 further includes a second connecting clip J2.

[0119] The first connecting ends of the second connecting clip J2 are respectively connected with the first lower switch tubes Q3, the second connecting ends of the second connecting clip J2 are respectively connected with the second lower switch tubes Q4, and the third connecting end of the second connecting clip J2 is connected with the third cladding 104.

[0120] The region of the second connecting clip J2 close to the first cladding 102 is provided with a notch.

[0121] In the embodiment, the second connecting clip J2 can be a conductive connecting clip. The second connecting clip J2 can also be a metal clip such as a copper clip or other non-metal clip that can conduct electricity.

[0122] In addition, the second connecting clip J2 can be connected to the source of the first lower switch Q3 and the second lower switch Q4 to improve the consistency of the equivalent inductance between the gate and the source of each first lower switch Q3 and each second lower switch Q4.

[0123] In addition, the current of the second connecting clip J2 flows out of each first lower switch Q3 and each second lower switch Q4, and the current of each first lower switch Q3 and each second lower switch Q4 flows out of the first upper switch Q1, the second upper switch Q2, and the first connecting clip J1. Therefore, the notch of the first connecting clip J1 is arranged at a position close to the connection point of the first cladding layer 102 and the second cladding layer 103.

[0124] In the embodiment, the shape and size of the notch of the second connecting clip J2 can be set by a person skilled in the art according to actual needs. For example, as shown in FIG. 4, a notch can also be arranged at the middle position of the second connecting clip J2 to adjust the current transmission path corresponding to different switches. The position of each lower switch can be adjusted. The present embodiment does not limit this.

[0125] It is worth noting that, as shown in FIG. 4, the third connecting end of the second connecting clip J2 can be clamped on the third cladding layer 104 to achieve the same function as the connection point D2.

[0126] As mentioned above, due to the difference in the installation position of each switch on the half-bridge power module 100, the current flow path through each switch to each cladding layer is also different. For example, the current flowing out of the first upper switch Q1 flows through the first connecting clip J1, the first first lower switch Q3 from right to left, and the corresponding connection point D2 to the power supply negative electrode. The transmission distance is less than the transmission distance through the second first lower switch Q3 and the corresponding connection point D2 to the power supply negative electrode. Therefore, the parasitic inductance generated by the current flowing through each first lower switch Q3 and / or each second lower switch Q4 is also different.

[0127] It is worth mentioning that, due to the notch provided on the second connecting clip J2 close to the first connecting clip J1, and / or the connection point of the first cladding 102 and the second cladding 103, and / or the area close to the first cladding 102, the current at least needs to be transmitted along the edge of the notch when flowing through the first lower switch tube Q3 or the second lower switch tube Q4 closest to the first connecting clip J1, and / or the connection point of the first cladding 102 and the second cladding 103, and / or the first cladding 102.

[0128] The transmission path of the current along the edge of the notch becomes longer than the transmission path without the notch, so that the transmission path distance of the current flowing from each first lower switch tube Q3 or each second lower switch tube Q4 to the third cladding 104 or the negative electrode of the power supply can be made as close as possible, and the relative positions between each first lower switch tube Q3 or each second lower switch tube Q4 can be set more flexibly.

[0129] In this way, the parasitic parameters corresponding to each switch tube can be reduced, and the differences between the same group of switch tubes can be reduced, so that the dynamic current when each first lower switch tube Q3 and each second lower switch tube Q4 is turned on is more balanced. In addition, since the second connecting clip J2 has a larger heat dissipation area than the connecting line, the heat dissipation capacity of the half-bridge power module 100 can also be improved.

[0130] It can be understood that, if the first connecting clip J1 and / or the second connecting clip J2 is used to realize the front interconnection between the switch tubes in the embodiment of the present application, the stress of the interconnection interface can be reduced, and the reliability of the half-bridge power module 100 can be improved.

[0131] In a possible implementation manner, referring to FIG. 5, the half-bridge power module 100 further includes a plurality of second interconnection lines L2.

[0132] At least one second interconnection line L2 is arranged between the sources of each first upper switch tube Q1, between the sources of each second upper switch tube Q2, between the sources of each first lower switch tube Q3, and between the sources of each second lower switch tube Q4.

[0133] In the embodiment, the number of each second interconnection line L2 can be any positive integer. Generally, as many second interconnection lines L2 as possible can be arranged between the sources of the same group of switch tubes, and the actual layout and space conditions are specifically required to be set, which is not limited in the embodiment of the present application.

[0134] Each second interconnection line L2 can be a connecting line capable of conducting electricity, such as a metal line, for example, a copper line, an aluminum line, or other non-metal lines capable of conducting electricity. Each second interconnection line L2 can be a bonding wire, which is not limited in the embodiment of the present application.

[0135] Specifically, a second interconnection line L2 can be arranged between the sources of any two first upper switch tubes Q1, or a second interconnection line L2 can be arranged between the sources of any two adjacent first upper switch tubes Q1, or the second interconnection line L2 can be arranged in any other possible manner, which is not limited in the embodiments of the present application.

[0136] For example, as shown in FIG. 5, a second interconnection line L2 is arranged between the sources of each switch tube in each group of switch tubes. Specifically, the sources of the middle first upper switch tube Q1 are respectively connected to the sources of the first upper switch tubes Q1 on the left and right sides through a second interconnection line L2. The sources of the middle second upper switch tube Q2 are respectively connected to the sources of the second upper switch tubes Q2 on the left and right sides through a second interconnection line L2. The sources of the middle first lower switch tube Q3 are respectively connected to the sources of the first lower switch tubes Q3 on the left and right sides through a second interconnection line L2. The sources of the middle second lower switch tube Q4 are respectively connected to the sources of the second lower switch tubes Q4 on the left and right sides through a second interconnection line L2.

[0137] However, this is only an example for illustrating the arrangement position of the second interconnection line L2, and does not mean that the half-bridge power module 100 provided by the embodiments of the present application can only be arranged in the example manner.

[0138] In this way, when inductive coupling occurs in each group of switch tubes, or the inductance or voltage corresponding to the transmission line of each switch tube in the same group is not equal, the inductance or voltage can be balanced through the connection between the sources of each switch tube in the group, thereby reducing the source inductance of each switch tube.

[0139] In this way, the problem of large interconnection inductance between switch tubes can be avoided, thereby improving the current sharing characteristics of the half-bridge power module and reducing the possibility of oscillation.

[0140] In one possible manner, in the same group of switch tubes, the gate level binding line for connecting the gate of the switch tube can be connected to the gate of each switch tube in the group.

[0141] If the number of switch tubes in the same group of switch tubes is odd, the gate level binding line for connecting the source of the switch tube can be routed to the source of the middle switch tube in the group, so that the consistency of the source parasitic parameters of the switch tubes on both sides can be improved, and the current sharing characteristics of the half-bridge power module 100 can be improved.

[0142] In addition, as can be seen from the various embodiments provided in the present application, the scheme provided in the present application can improve the current sharing characteristics of the half-bridge power module and reduce the possibility of oscillation, without the need to increase the gate resistance of each switch tube to solve the gate oscillation between the parallel chips, and therefore, the half-bridge power module provided in the present application also has the advantages of lower cost and less modification to the original circuit.

[0143] Based on the above-mentioned embodiments and the same concept, the present application further provides an inverter.

[0144] Exemplarily, referring to FIG. 6, the inverter 200 provided in the present application can include at least one half-bridge power module 100 provided in any of the above-mentioned embodiments

[0145] In the present embodiment, the input end of the inverter 100 can be used to input direct current, and the output end of the inverter 100 is used to output alternating current.

[0146] The inverter 100 can be a single-phase inverter, a two-phase inverter or a three-phase inverter.

[0147] For example, if the inverter 100 is a single-phase inverter, the inverter 100 can include one half-bridge power module. If the inverter 100 is a two-phase inverter, the inverter 100 can include two half-bridge power modules to convert each phase respectively. If the inverter 100 is a three-phase inverter, the inverter 100 can include three half-bridge power modules to convert each phase respectively.

[0148] In addition, the inverter 100 can further include a controller, a filter circuit and other components for realizing the conversion function of converting direct current into alternating current, which are not limited in the present application.

[0149] It can be understood that the inverter 100 provided in the present application can realize the functions of any half-bridge power module provided in the above-mentioned embodiments, and has the corresponding beneficial effects, which are not described herein.

[0150] The present application further provides a vehicle including the inverter provided in any of the above-mentioned embodiments.

[0151] In the present embodiment, the vehicle can refer to a vehicle including a direct current power battery or a vehicle requiring conversion of direct current into alternating current. Exemplarily, the vehicle can be a pure electric vehicle, a range extended vehicle or a plug-in hybrid vehicle, which are not limited in the present application.

[0152] It can be understood that the vehicle can further include other components for realizing any possible related functions, such as a power supply unit (which can include components such as a power battery and a voltage conversion device), a driving unit (which can include components such as a motor, a transmission device, and a wheel), a detection unit, a display unit, a prompting unit, and the like, and the embodiments of the present application do not limit this.

[0153] It can be understood that the vehicle provided by the embodiments of the present application can realize the functions of any one of the half-bridge power modules provided by the above-mentioned embodiments, and has corresponding beneficial effects, which will not be repeated here.

[0154] It should be noted that in this document, relational terms such as "first" and "second", and the like, are used solely to distinguish one entity or action from another entity or action, without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises", "comprising", or any other variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but can include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without more limitations, an element preceded by "comprises... " does not, without more limitations, foreclose the existence of additional identical elements in the process, method, article, or apparatus that includes the recited element.

[0155] In the claims, any reference signs placed between parentheses shall not be construed as limiting the claim. The word "comprising" does not exclude the presence of elements or steps other than those listed in a claim. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements. The application can be implemented by means of both hardware and software, and any combination thereof. In a unit claim, several devices can be listed with a comma. The use of the term "means" does not limit the scope of any claim. The phrase "first", "second", and the like does not imply any order, quantity, or importance, but rather are used to identify one element from another. The terms "preferably", "preferred", "preferably", "desired", and the like are not terms of limitation, but are descriptive only.

[0156] In the specification provided herein, a large number of specific details are described. However, it can be understood that the embodiments of the present application can be practiced without these specific details. In some instances, well-known methods, structures, and techniques have not been described in detail in order to not obscure the understanding of the present specification.

[0157] The foregoing detailed description of the application has been presented for purposes of illustration and description. Various modifications and changes can be made to these embodiments without departing from the spirit and scope of the application. It is intended that the scope of the application should not be limited by the particular representative embodiments described above.

Claims

1. A half-bridge power module, wherein, The half-bridge power module comprises: an insulating substrate, an upper bridge arm, a lower bridge arm, a first cover layer, a second cover layer, and a third cover layer; the upper bridge arm comprises a plurality of first upper switch tubes and a plurality of second upper switch tubes; the lower bridge arm comprises a plurality of first lower switch tubes and a plurality of second lower switch tubes; The first cover layer, the second cover layer, and the third cover layer are respectively attached to the upper surface of the insulating substrate. The first cover layer is connected to the second cover layer through the upper bridge arm, and the second cover layer is connected to the third cover layer through the lower bridge arm; the first cover layer is used for connecting a positive electrode of a power supply; the second cover layer is used for outputting electric energy to an external device; and the third cover layer is used for connecting a negative electrode of the power supply. The source of each first upper switch tube is connected, the source of each second upper switch tube is connected, the source of each first lower switch tube is connected, and the source of each second lower switch tube is connected.

2. The half-bridge power module of claim 1, wherein, The first cover layer comprises a first sub-cover layer and a second sub-cover layer. Each first upper switch tube is arranged on the first sub-cover layer, and each second upper switch tube is arranged on the second sub-cover layer.

3. The half-bridge power module of claim 2, wherein, The half-bridge power module further comprises at least one first interconnecting line. The first end of each first interconnecting line is connected to the first sub-cover layer, and the second end of each first interconnecting line is connected to the second sub-cover layer.

4. The half-bridge power module according to claim 2 or 3, wherein The half-bridge power module further comprises a first connecting clamp. Each first connecting end of the first connecting clamp is connected to each first upper switch tube, each second connecting end of the first connecting clamp is connected to each second upper switch tube, and a third connecting end of the first connecting clamp is connected to the second cover layer. An area of the first connecting clamp close to the third cover layer is provided with a notch.

5. The half-bridge power module according to any one of claims 1 to 4, wherein The half-bridge power module further comprises a second connecting clamp. Each first connecting end of the second connecting clamp is connected to each first lower switch tube, each second connecting end of the second connecting clamp is connected to each second lower switch tube, and a third connecting end of the second connecting clamp is connected to the third cover layer. An area of the second connecting clamp close to the first cover layer is provided with a notch.

6. The half-bridge power module according to any one of claims 1 to 5, wherein, The half-bridge power module further comprises a plurality of second interconnecting lines. At least one second interconnecting line is arranged between the sources of each first upper switch tube, between the sources of each second upper switch tube, between the sources of each first lower switch tube, and between the sources of each second lower switch tube.

7. The half-bridge power module according to any one of claims 1 to 6, wherein Each first upper switch tube is symmetrically arranged with each second upper switch tube. Each first lower switch tube is symmetrically arranged with each second lower switch tube.

8. The half-bridge power module according to any one of claims 1 to 7, wherein, The current transmission distance between one switch tube of any group of switch tubes in the upper bridge arm and the input point of the positive electrode of the power supply is negatively correlated with the current transmission distance between the connection points of the first cover layer and the second cover layer.

9. The half-bridge power module according to any one of claims 1-8, wherein, The current transmission distance between one of the switch tubes in any group of switch tubes in the lower bridge arm and the connection point of the first cladding and the second cladding is negatively related to the current transmission distance between the connection point of the second cladding and the third cladding.

10. An inverter, wherein, The inverter comprises at least one half-bridge power module according to any one of claims 1 to 9.

11. A vehicle, wherein, The vehicle comprises an inverter according to claim 10.

Citation Information

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