Plasma processing device

Abstract

Provided is a plasma processing device with which the operating cost of abatement equipment is minimized. This plasma processing device comprises: a processing chamber in which a sample is subjected to plasma processing; a high-frequency power supply which supplies high-frequency power for generating plasma; a sample mount on which the sample is placed; abatement equipment which decomposes waste gas from the processing chamber; and a control device which controls the abatement equipment. The control device controls the abatement equipment according to an abatement equipment operation condition defined on the basis of the global warming potential per unit of time calculated using an etching condition.

Description

Plasma processing equipment

[0001] The present invention relates to a plasma processing apparatus, and is particularly applicable to a plasma processing apparatus having equipment for removing harmful exhaust gases generated in the manufacturing process of processing semiconductor devices.

[0002] Transistor miniaturization is essential for the continuous improvement of the functions and performance of integrated circuit chips. According to the 2022 edition of the IRDS (International Roadap for Devices and Systems), the technology node, an index indicating the miniaturization of patterns, is currently at the 2 nm node and is expected to reach the 1.5 nm node in 2028 and the 0.5 nm node in 2037. The sum of the actual transistor wiring width and wiring spacing is called the pitch, and half of that is called the half pitch (HP). Generally, the HP is 10 nm for a 2 nm technology node and 8 nm for a 1.5 nm technology node.

[0003] Furthermore, the structure of semiconductors is evolving from Gate All Around (GAA) to Complementary Field-Effect Transistor (CFET), and new materials are being considered for use. As transistors become smaller and their structures and materials change, the number of manufacturing processes in semiconductor manufacturing equipment continues to increase. This has led to an increase in greenhouse gas (GHG) emissions from semiconductor manufacturing equipment, which has become a problem. For this reason, the semiconductor industry is stepping up its efforts to reduce GHG emissions, aiming for carbon neutrality, which means reducing GHG emissions to zero.

[0004] The GHGs used in semiconductor manufacturing equipment are quantified using the Global Warming Potential (hereinafter referred to as "GWP"), which is reported periodically (every 5-6 years) by the Intergovernmental Panel on Climate Change (hereinafter referred to as "IPCC"). The types of gases used include nitrogen trifluoride (NF ３) gas, sulfur hexafluoride (SF ６ High GWP gases include perfluorocarbon (hereinafter referred to as "PFC") gas, hydrofluorocarbon (hereinafter referred to as "HFC") gas, and the like.

[0005] Reducing these GHG emissions is an urgent task, and one method for doing so is to decompose exhaust gases into harmless gases using high-temperature combustion or plasma abatement equipment. For example, NF3 decomposes at around 800°C, while tetrafluoromethane (CF4) gas, a PFC that is considered the most difficult to decompose, is thought to decompose only at temperatures above 1400°C. However, operating such high-temperature combustion or plasma abatement equipment requires a large amount of electricity and water, which in itself promotes the generation of carbon dioxide and increases running costs.

[0006] On the other hand, there is also a method of detoxifying exhaust gases using dry abatement equipment. For example, different combinations of abatement agents (chemicals) are used depending on the type of exhaust gas, and the exhaust gas is fixed to the abatement agent through a chemical reaction. However, when disposing of the abatement agent with the fixed exhaust gas, a final treatment method that promotes the generation of carbon dioxide may be required.

[0007] Patent Document 1 discloses a method for reducing the running costs of abatement equipment by inputting information about etching gases and exhaust gases into the abatement equipment and controlling the abatement capacity.

[0008] Japanese Patent Application Laid-Open No. 2002-353197

[0009] In conventional semiconductor manufacturing equipment, for example, the plasma etching equipment and the abatement equipment are operated independently of each other, and the abatement equipment is operated at full capacity even when the etching equipment is not etching wafers, resulting in increased running costs. According to the technology in Patent Document 1, the abatement capacity of the abatement equipment is determined based on information about the gases introduced into the etching chamber. This controls the processing temperature and water volume of the abatement equipment depending on whether GHGs are introduced into the etching equipment, thereby reducing the running costs of the abatement equipment.

[0010] However, this technology does not minimize running costs because it does not control the abatement equipment based on GWP information, including non-GHG gases. In other words, when the gas introduced into the etching chamber is a mixture of GHG and non-GHG gases, the GWP information of the total mixed gas introduced into the etching chamber per unit time is not taken into account. This results in excessive operation of the abatement equipment, which does not minimize running costs and results in inefficient operation of the abatement equipment.

[0011] Furthermore, the technology of Patent Document 1 does not take into account the fact that GHG introduced into the etching chamber is decomposed and discharged by plasma. In other words, it does not take into account the fact that GHG is introduced into the etching chamber and then decomposed and reduced by plasma. Therefore, information about the decomposition and reduction is not reflected in the abatement capacity of the abatement equipment, resulting in inefficient operation of the abatement equipment. Next, the technology of Patent Document 1 does not take into account the fact that GHG introduced into the etching chamber is decomposed by plasma and then recombines, resulting in a certain percentage of the original GHG gas becoming a different GHG and being discharged. Furthermore, it does not take into account the fact that non-GHG or low-GWP gas introduced into the etching chamber is decomposed by plasma and then recombines, resulting in a certain percentage of the original gas becoming a GHG and being discharged. Therefore, this information is not reflected in the abatement capacity of the abatement equipment, resulting in inefficient operation of the abatement equipment.

[0012] In order to solve the above problems, a typical plasma processing apparatus according to the present invention is equipped with a control device that controls the exhaust gas decomposition capacity of the decontamination equipment, and the problem is achieved by appropriately controlling the exhaust gas decomposition capacity of the decontamination equipment based on hourly GWP information calculated from information on GHG or non-GHG mixed gases introduced into the etching processing chamber.

[0013] According to the present invention, a plasma processing apparatus is provided in which the running costs of the abatement equipment are minimized.

[0014] Problems, configurations, and effects other than those described above will become apparent from the following description of the embodiments.

[0015] FIG. 1 is a diagram showing the configuration of the plasma processing apparatus of Examples 1, 2, and 3. FIG. 2 is a diagram showing the GWP values ​​of selected GHGs. FIG. 3 is a diagram showing a method for calculating GWP per unit time in Example 1. FIG. 4 is a diagram showing the CHF ３ FIG. 5 is a diagram showing the change in the CHF gas amount when the microwave output is changed at a gas flow rate of 150 [ml / min] and a processing chamber pressure of 1.0 [Pa]. FIG. 5 is a diagram showing the change in the CHF gas amount when the processing chamber pressure is changed at a CHF gas flow rate of 150 [ml / min] and a microwave output of 1000 W in Example 2. FIG. 6 is a diagram showing the change in the CHF gas amount and CHF gas amount when the microwave output is changed at a CHF gas flow rate of 150 [ml / min] and a processing chamber pressure of 1.0 [Pa] in Example 3. ４ FIG. 10 is a diagram showing changes in gas amount.

[0016] Embodiments of the present invention will be described below with reference to the drawings. The configuration of a plasma processing apparatus 10 according to one embodiment of the present invention is shown in Figure 1. As shown in Figure 1, the plasma processing apparatus 10 has components 101-119, which will be described below, such as an etching apparatus 101, a detoxification system 114, and a control apparatus 115.

[0017] An ECR (Electron Cyclotron Resonance) microwave plasma etching apparatus (hereinafter referred to as the "etching apparatus") was used as the etching apparatus 101. An etching gas 104 was supplied from a gas supply apparatus 102 into a processing chamber 103, and the gas was exhausted by a turbo molecular pump 106 and a dry pump 107 downstream thereof via an exhaust speed variable valve 105 of the etching processing chamber 103. The pressure in the etching processing chamber (hereinafter also simply referred to as the processing chamber) 103 was adjusted to a desired pressure by the exhaust variable valve 105.

[0018] An electromagnetic wave generating power supply 108, which is a microwave power supply (high frequency power supply), is installed above the processing chamber 103 to supply high frequency power for generating plasma to the processing chamber 103. A magnetic field generating coil 109 for generating a magnetic field is installed outside the etching processing chamber 103. The electromagnetic waves generated by the electromagnetic wave generating power supply 108 interact with the magnetic field generated by the magnetic field generating coil 109 to generate high density plasma 110 within the processing chamber 103, which performs an etching process (plasma process) on a wafer 112, which is a sample placed on a sample mounting electrode 111, which is a sample stage. A high frequency bias power supply 113 is connected to the sample mounting electrode 111.

[0019] Meanwhile, the gas exhausted by the dry pump 107 is detoxified by a detoxification system 114, and the exhaust gas decomposition capability of the abatement system 114 is appropriately controlled by abatement system control information 116 sent from a control device 115. The control device 115 receives etching gas information 117 sent from the gas supply system 102 and OES information 119 measured by an OES (Optical Emission Spectrometer) 118 from the high-density plasma 110. Next, an embodiment using the plasma processing apparatus 10 including the etching apparatus 101 described above will be described below.

[0020] In Example 1, when the gas introduced into the etching processing chamber 103 is a mixed gas consisting of GHG and non-GHG gases, a method for appropriately controlling the exhaust gas decomposition capacity (operating conditions) of the abatement equipment 114 is described, taking into account GWP information for the total mixed gas introduced into the etching processing chamber 103 per unit time. That is, the control device 115 can control the abatement equipment 114 based on the operating conditions of the abatement equipment 114, which are determined based on the hourly global warming potential GWP and exhaust gas data. The hourly global warming potential GWP is calculated using the gas flow rate, the gas global warming potential, the gas density, and the gas mass, as described below. Furthermore, the exhaust gas data can be acquired upstream of the turbomolecular pump 106, upstream of the dry pump 107, or upstream of the abatement equipment 114, as described below.

[0021] Figure 2 shows the GWP values ​​of GHGs extracted from the above-mentioned report by the IPCC. This value is the 100-year value published in the 5th Assessment Report of the IPCC in 2013, and is an estimate of the cumulative value of radiant energy (i.e., the impact on global warming) given to the Earth over 100 years when a unit mass (for example, 1 kg) of GHG is released into the atmosphere, as a ratio to CO2. Therefore, for example, SF ６ has a greenhouse effect 23,500 times greater than that of CO2.

[0022] Next, the calculation method for determining the GWP per unit time is shown in Figure 3. Examples of etching gases include argon (Ar) gas, trifluoromethane (CHF ３ This section describes the case of a mixture of three types of gases: sulfur hexafluoride (SF6) gas, sulfur hexafluoride (SF6), and sulfur hexafluoride (SF6). First, from the example gas flow rates of 100 / 150 / 15 ml / min, the flow rate ratios are calculated as 0.38 / 0.57 / 0.06 (rounded up to the third decimal place) when the total gas flow rate is 1. Next, the flow rate ratio GWP is calculated as 0 / 7,019 / 1,330 from the product of the flow rate ratios of each gas and the GWPs of each gas: 0 / 12,400 / 23,500 (set to 0 for gases that are not GHGs, such as Ar gas). Next, the total flow rate GWP is calculated as 8,349 from the sum of the flow rate ratio GWPs. Next, referring to values ​​published by gas manufacturers, etc., the gas densities of each gas are calculated as 1.65 / 2.90 / 6.50 g / L. Next, the GWP mass: 0 / 0.435 / 0.098 [g / min] is calculated from the gas flow rate and gas density. Next, the total GWP mass is calculated from the sum of the GWP masses. Finally, the GWP per unit time: 4.45 [GWP / min] is calculated from the total GWP mass and the total flow rate ratio GWP. In other words, this GWP per unit time becomes GWP information for the total mixed gas introduced into the etching process chamber, and is a numerical value based on GWP that allows for quantitative comparison of mixed gases consisting of GHG and non-GHG gases.

[0023] 1, and is input to the abatement facility 114 as abatement facility control information 116, where the abatement facility 114 is appropriately controlled to a predetermined exhaust gas decomposition capacity. In other words, the control facility 115 has a table or database of exhaust gas decomposition capacities as predefined operating conditions based on the hourly global warming potential GWP and exhaust gas data, and is configured to search the table or database of exhaust gas decomposition capacities based on the hourly global warming potential GWP and exhaust gas data to extract desired operating conditions and input them to the abatement facility 114.

[0024] 1, the gas information transmitted from the equipment control device that controls the etching equipment 101 may be received by the control device 115. Alternatively, although not shown in FIG. 1, the gas information may be calculated by the equipment control device that controls the etching equipment from the gas information of the equipment control device, and input to the abatement facility 114 as abatement equipment control information 116.

[0025] Although not shown in FIG. 3, the decomposition temperature and decomposition rate of each GHG corresponding to the abatement equipment 114 may be taken into consideration when making the calculation.

[0026] According to the method of this embodiment, in the case where the gas introduced into the etching processing chamber 103 in the plasma processing apparatus 10 is a mixed gas consisting of GHG and non-GHG gases, the GWP information of the total mixed gas introduced into the etching apparatus 101 per unit time is taken into consideration, thereby preventing excessive operation of the abatement equipment 114 and enabling highly efficient operation of the abatement equipment 114 with minimal running costs.

[0027] Next, as Example 2, a method for appropriately controlling the exhaust gas decomposition ability of the abatement equipment 114 will be described. This method involves determining and quantifying in advance the amount of GHG introduced into the etching processing chamber 103 that is decomposed by plasma and discharged at a reduced rate relative to the amount of gas introduced. Specifically, the control device 115 can control the abatement equipment 114 under operating conditions determined based on the hourly global warming potential (GWP), exhaust gas data, and plasma light emission data. The control device 115 can also control the abatement equipment 114 under operating conditions determined based on the hourly global warming potential (GWP), exhaust gas data, and plasma decomposition rate data calculated using the etching conditions. The plasma decomposition rate data can be calculated using the pressure, high-frequency power, plasma light emission data, and exhaust gas data in the processing chamber 103, as described below.

[0028] As an example of plasma conditions, CHF ３ FIG. 4 shows the change in the amount of CHF gas when the microwave output is changed at a gas rate of 150 ml / min introduced into the etching chamber 103 and the chamber pressure is 1.0 Pa. ３ Although not shown, the gas amount was measured using a Fourier transform infrared spectrometer (hereinafter referred to as "FTIR") installed between the dry pump 107 and the abatement equipment 114 in Fig. 1. FTIR is an exhaust gas measurement device commonly used in etching equipment and CVD (Chemical Vapor Deposition) equipment, and can simultaneously and quantitatively measure the exhaust gas concentrations of multiple gases.

[0029] CHF ３ Regarding the gas amount, the CHF introduced into the etching processing chamber 103 when the microwave output is 0 [W], that is, when the plasma is off, ３The graph shows the change in gas volume when the microwave output is increased from 100%, assuming that the amount of gas discharged directly without passing through plasma. As can be seen, the increase in microwave output, that is, the increase in plasma density and dissociation degree, controls the decomposition of GHG introduced into the etching equipment 103 (plasma decomposition rate), and the amount of gas introduced is reduced and discharged via plasma.

[0030] Next, CHF ３ The gas was introduced into the etching processing chamber 103, and as an example of plasma conditions, the CHF ３ The change in gas amount is shown in Figure 5. As before, the amount discharged when the plasma is off is set to 100%, and the change in gas amount when the processing chamber pressure is increased from there is shown. As shown, it can be seen that the decomposition of GHG introduced into the etching processing chamber 103 (plasma decomposition rate) is controlled by increasing the processing chamber pressure, that is, by increasing the residence time of the gas in the processing chamber 103, and the amount of introduced gas is reduced through the plasma and discharged.

[0031] The two examples (Figures 4 and 5) above allow us to predict and quantify in advance how GHG introduced into the etching process chamber 103 is decomposed by plasma controlled by microwave power and process chamber pressure, resulting in a reduction in the amount of GHG emitted from the chamber. While the microwave power and process chamber pressure have been discussed above, other plasma control parameters, such as the RF bias power supply and magnetic field generating coil, can also be predicted and quantified in advance. That is, the control device 115 can control the abatement system 114 under operating conditions determined based on the hourly global warming potential (GWP), exhaust gas data, and plasma light emission data. The plasma light emission data can be obtained from the plasma control parameters, such as microwave power, process chamber pressure, RF bias power supply, and magnetic field generating coil conditions. The control device 115 has a table or database of exhaust gas decomposition capacities determined based on the hourly global warming potential (GWP), exhaust gas data, and plasma light emission data. The control device 115 is configured to search a table or database of exhaust gas decomposition capacity based on the hourly global warming potential GWP, exhaust gas data, and plasma light emission data, extract desired operating conditions, and input them into the abatement equipment 114.

[0032] Next, for the gas whose reduction amount has been quantified in advance, the exhaust gas flow rate is calculated from the exhaust rate. For example, using the values ​​in Figure 4, the amount of CHF3 gas exhausted through plasma when the microwave output is 1000 [W] is 50 [%]. ３ Gas: 50% of 150 ml / min, i.e. CHF ３ Gas: 75 [ml / min] will be discharged. ３While this is an example of a single gas, it is possible to grasp, quantify, and calculate emissions in advance for other types of GHGs, for mixed gases of two or more GHGs, or for mixed gases containing two or more GHGs and non-GHG gases. In other words, the control device 115 can control the abatement equipment 114 under operating conditions defined based on the hourly global warming potential (GWP), exhaust gas data, and plasma decomposition rate data calculated using the etching conditions. The control device 115 has a table or database of exhaust gas decomposition capacity as predefined operating conditions based on the hourly global warming potential (GWP), exhaust gas data, and plasma decomposition rate data calculated using the etching conditions. The control device 115 is configured to search the table or database of exhaust gas decomposition capacity based on the hourly global warming potential (GWP), exhaust gas data, and plasma decomposition rate data calculated using the etching conditions, extract desired operating conditions, and input them into the abatement equipment 114.

[0033] In this way, the gas emissions via plasma under desired etching process conditions are measured and calculated in advance, and a numerical table of gas emissions corresponding to the etching process conditions is provided in the control device 115 shown in Fig. 1 or in an apparatus control device (not shown) that controls the etching apparatus. Using this numerical table of gas emissions, the GWP per unit time is calculated in the same manner as described in Example 1, substituting the gas flow rates in Fig. 3 with the gas emissions. This calculation is performed by the control device 115 that receives etching gas information 117 transmitted from the gas supply device 102 shown in Fig. 1, and input to the abatement equipment 114 as abatement equipment control information 116. The abatement equipment 114 is then appropriately controlled to a predetermined exhaust gas decomposition capacity based on the abatement equipment control information 116.

[0034] 1, the gas information transmitted from the equipment control device that controls the etching equipment 101 may be received by the control device 115. Alternatively, although not shown in FIG. 1, the gas information may be calculated by the equipment control device that controls the etching equipment from the gas information of the equipment control device, and input to the abatement facility 114 as abatement equipment control information 116.

[0035] Although not shown in FIG. 3, the decomposition temperature and decomposition rate of each GHG corresponding to the abatement equipment 114 may be taken into consideration when making the calculation.

[0036] The method of this embodiment clarifies that GHG introduced into the etching processing chamber in plasma processing apparatus 10 is decomposed by plasma and is discharged in an amount less than the amount of gas introduced, and then takes into consideration the GWP information of the total mixed gas discharged from etching apparatus 101 per unit time. This prevents excessive operation of abatement equipment 114, enabling highly efficient operation of abatement equipment 114 with minimal running costs.

[0037] Next, as a third embodiment, a method for appropriately controlling the exhaust gas decomposition ability of the abatement equipment 114 after grasping and quantifying the following two points in advance will be described.

[0038] 1) The GHG introduced into the etching processing chamber 101 is decomposed by the plasma and then recombined, resulting in a certain percentage of the original GHG gas becoming other GHGs and being discharged.

[0039] 2) When a non-GHG or low GWP gas is introduced into the etching equipment 101, it is decomposed by plasma and then recombined, resulting in a certain percentage of the original gas becoming GHG and being emitted.

[0040] In other words, the control device 115 controls the abatement equipment 114 under operating conditions that are defined based on the hourly global warming potential GWP, exhaust gas data, plasma light emission data, and plasma decomposition rate data calculated using the etching conditions.

[0041] As an example of plasma conditions, CHF ３FIG. 6 shows the change in the amount of CHF gas when the microwave output is changed at a gas flow rate of 150 ml / min introduced into the etching chamber 103 and the chamber pressure is 1.0 Pa. This is the same as the plasma conditions (FIG. 4) described in Example 2. However, in this example, the CHF ３ The behavior of the CF4 gas amount is shown along with the behavior of the gas amount. This means that the increase in microwave output, that is, the increase in plasma density and dissociation degree, ３ This indicates that while the amount of gas decreased, CF4 gas was generated by recombination, increased, and was then discharged.

[0042] As described above, it can be seen that the GHG introduced into the etching processing chamber 103 is decomposed by the plasma and then recombined, resulting in a certain percentage of the original GHG gas becoming other GHGs and being discharged.

[0043] On the other hand, although not shown in the figure, it has also been measured that when non-GHG or low-GWP gases are decomposed by plasma and then recombined, a certain percentage of the original gas becomes GHG and is emitted.

[0044] From the above two examples, the following two points can be grasped and quantified in advance.

[0045] 1) The GHG introduced into the etching processing chamber 103 is decomposed by the plasma and then recombined, resulting in a certain percentage of the original GHG gas becoming other GHG gases and being discharged.

[0046] 2) When a non-GHG or low GWP gas is introduced into the etching chamber 103, it is decomposed by plasma and then recombined, with a percentage of the original gas becoming a GHG and being emitted.

[0047] That is, the control device 115 can control the abatement equipment 114 under operating conditions defined based on the hourly global warming potential GWP, exhaust gas data, plasma light emission data, and data on the plasma decomposition rate calculated using the etching conditions. Here, the control device 115 has a table or database of exhaust gas decomposition capacity as operating conditions defined in advance based on the hourly global warming potential GWP, exhaust gas data, plasma light emission data, and data on the plasma decomposition rate calculated using the etching conditions. The control device 115 is configured to search the table or database of exhaust gas decomposition capacity based on the hourly global warming potential GWP, exhaust gas data, and data on the plasma decomposition rate calculated using the etching conditions, extract desired operating conditions, and input them into the abatement equipment 114.

[0048] The above has clarified the microwave output, but it is also possible to grasp and quantify in advance the control when other plasma control parameters, such as the processing chamber pressure, the RF bias power supply, and the magnetic field generating coil conditions, are changed. Plasma light emission data can be obtained from the plasma control parameters, such as the microwave output, processing chamber pressure, RF bias power supply, and magnetic field generating coil conditions.

[0049] In this way, the gas emissions via plasma under desired etching processing conditions are measured and calculated in advance, and a numerical table of gas emissions corresponding to the etching processing conditions is provided in control device 115 shown in Fig. 1 or, although not shown, in an apparatus control device that controls etching apparatus 101. Using this numerical table of gas emissions, the GWP per unit time is calculated in the same manner as in Example 1, substituting the gas flow rate in Fig. 3 with the gas emissions.

[0050] This calculation is performed by a control device 115 that receives etching gas information 117 sent from the gas supply device 102 shown in FIG. 1, and the information is input to the abatement equipment 114 as abatement equipment control information 116. The abatement equipment 114 is then appropriately controlled to a predetermined exhaust gas decomposition capacity based on the abatement equipment control information 116.

[0051] 1, the gas information transmitted from the control device that controls the etching device 101 may be received by the control device 115. Alternatively, although not shown in FIG. 1, the gas information may be calculated by the device control device that controls the etching device from the gas information of the device control device, and input to the abatement facility 114 as abatement device control information 116.

[0052] Although not shown in FIG. 3, the decomposition temperature and decomposition rate of each GHG corresponding to the abatement equipment 114 may be taken into consideration when making the calculation.

[0053] The method of this embodiment clarifies that in plasma processing apparatus 10, GHG introduced into the etching processing chamber is decomposed by plasma and then recombined, resulting in a certain percentage of the original GHG gas being converted into other GHGs and being discharged, and that non-GHG or low-GWP gas introduced into the etching apparatus is decomposed by plasma and then recombined, resulting in a certain percentage of the original gas being converted into GHG and being discharged. Furthermore, by taking into consideration the GWP information of the total mixed gas discharged from etching apparatus 101 per unit time, excessive operation of the abatement equipment can be prevented, enabling the implementation of highly efficient operation of the abatement equipment with minimal running costs.

[0054] The invention made by the inventor has been specifically described above based on the embodiments, but it goes without saying that the present invention is not limited to the above embodiments and can be modified in various ways without departing from the spirit of the invention. For example, the above embodiments have been described in detail to clearly explain the present invention, and the present invention is not necessarily limited to those having all of the described configurations. Furthermore, it is possible to add, delete, or replace part of the configuration of each embodiment with other configurations.

[0055] 101: Etching apparatus, 102: Gas supply apparatus, 103: Processing chamber, 104: Etching gas, 105: Exhaust speed variable valve, 106: Turbo pump, 107: Dry pump, 108: Electromagnetic wave generating power supply, 109: Magnetic field generating coil, 110: High density plasma, 111: Sample mounting electrode, 112: Wafer, 113: High frequency bias power supply, 114: Abatement equipment, 115: Control device, 116: Abatement equipment control information, 117: Etching gas information.

Claims

1. A plasma processing apparatus comprising a processing chamber in which a sample is plasma-processed, a high-frequency power supply that supplies high-frequency power to generate plasma, a sample stage on which the sample is placed, and a decomposition facility that decomposes exhaust gases from the processing chamber, further comprising a control device that controls the abatement facility, wherein the control device controls the abatement facility according to operating conditions for the abatement facility that are defined based on the global warming potential per hour calculated using etching conditions.

2. A plasma processing apparatus according to claim 1, characterized in that the control device controls the abatement equipment according to the operating conditions defined based on the hourly global warming potential and the exhaust gas data.

3. A plasma processing apparatus according to claim 1, characterized in that the control device controls the abatement equipment according to the operating conditions defined based on the hourly global warming potential, the exhaust gas data, and the plasma light emission data.

4. A plasma processing apparatus according to claim 1, characterized in that the control device controls the decontamination equipment according to the operating conditions defined based on the global warming potential per hour, the exhaust gas data, and the plasma decomposition rate data calculated using the etching conditions.

5. A plasma processing apparatus according to claim 1, characterized in that the control device controls the decontamination equipment according to the operating conditions defined based on the global warming potential per hour, the exhaust gas data, the plasma light emission data, and the plasma decomposition rate data calculated using the etching conditions.

6. A plasma processing apparatus according to claim 1, wherein the global warming potential per unit time is calculated using the gas flow rate, the global warming potential of the gas, the gas density, and the gas mass.

7. A plasma processing apparatus according to claim 1, wherein the data on the exhaust gas is acquired upstream of a turbo molecular pump, upstream of a dry pump, or upstream of the abatement equipment.

8. A plasma processing apparatus according to claim 4, wherein the data on the plasma decomposition rate is calculated using the pressure in the processing chamber, the high frequency power, data on the plasma light emission, and data on the exhaust gas.

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