Selector manufacturing method and selector

Abstract

A selector manufacturing method and a selector. The selector manufacturing method comprises: performing bevel etching on a contaminated metal layer (20), so as to form a first etched bevel (21) on one side of the contaminated metal layer (20) in a first direction; depositing a metal hard mask layer (30) on the contaminated metal layer (20), wherein the metal hard mask layer (30) covers at least the upper side of the contaminated metal layer (20) and the first etched bevel (21); depositing a second electrode layer (40) on the metal hard mask layer (30); providing a shielding member (50) on the second electrode layer (40); and using an etching process to etch and remove the parts of the second electrode layer (40), the metal hard mask layer (30), the contaminated metal layer (20), and a first electrode layer (10) that do not correspond to the shielding member (50). Therefore, after the bevel etching is performed on the contaminated metal layer, the metal hard mask layer is deposited on the contaminated metal layer, and then the second electrode layer is deposited on the metal hard mask layer, so that after the bevel etching, the exposure of the contaminated metal layer can be prevented from affecting subsequent processes for selectors, thereby improving the process reliability of selectors.

Description

Manufacturing method of gate and gate Cross-reference to related applications

[0001] This application claims priority to Chinese patent application filed on July 8, 2024, with application number 202410905238.2 and entitled "Method for manufacturing a selector and a selector". Technical Field

[0002] This disclosure relates to the field of semiconductor technology, and in particular to a method for manufacturing a gate and a gate itself. Background Technology

[0003] The gate is a MIM structure consisting of a metal layer-resistor layer-metal layer, where the upper metal film serves as the top electrode, the middle is the resistive switching layer, and the lower metal or conductive semiconductor substrate serves as the bottom electrode. The metal film is deposited on the crystal edge and back side; if not treated, it will affect the machine cavity and transport arm in subsequent processes.

[0004] In related technologies, the current process flow involves edge etching after all metal films have been deposited. Edge etching has limitations, as it can cause a long slope to form on one side of the etched metal layer, which remains exposed in subsequent processes, posing a risk of contaminating the cavity of the equipment used in those processes. Summary of the Invention

[0005] The embodiments disclosed herein aim to at least address one of the technical problems existing in the prior art. Therefore, one object of the embodiments disclosed herein is to provide a method for manufacturing a gate that can improve process reliability.

[0006] This disclosure further proposes a gate.

[0007] A method for manufacturing a selector according to an embodiment of this disclosure includes: depositing a first electrode layer on a dielectric layer material; depositing a contaminated metal layer on the first electrode layer; performing edge etching on the contaminated metal layer to form a first etching slope on one side of the contaminated metal layer in a first direction; depositing a metal hard mask layer on the contaminated metal layer, wherein the metal hard mask layer at least covers the upper side of the contaminated metal layer and the first etching slope; depositing a second electrode layer on the metal hard mask layer; disposing a shielding member on the second electrode layer; and etching away portions of the second electrode layer, the metal hard mask layer, the contaminated metal layer, and the first electrode layer that do not correspond to the shielding member by an etching process, retaining portions of the second electrode layer, the metal hard mask layer, the contaminated metal layer, and the first electrode layer that correspond to the shielding member.

[0008] Therefore, by etching the crystal edge of the contaminated metal layer, depositing a metal hard mask layer on the contaminated metal layer, and then depositing a second electrode layer on the metal hard mask layer, the exposure of the contaminated metal layer after the crystal edge etching can be prevented from affecting the subsequent processes of the selector, thereby improving the process reliability of the selector.

[0009] According to some embodiments of this disclosure, the step of performing edge etching on the contaminated metal layer to form a first etching slope on one side of the contaminated metal layer further includes: simultaneously performing edge etching on at least a portion of the first electrode layer to form a second etching slope on at least a portion of one side of the first electrode layer, wherein the first etching slope and the second etching slope have the same inclination angle and are flush with each other.

[0010] According to some embodiments of this disclosure, the step of depositing a metal hard mask layer on the contaminated metal layer, wherein the metal hard mask layer at least covers the upper side of the contaminated metal layer and the first etched slope, further includes: the metal hard mask layer also covering at least a portion of the second etched slope.

[0011] According to some embodiments of this disclosure, the step of etching away the portions of the second electrode layer, the hard metal mask layer, the contaminated metal layer, and the first electrode layer that do not correspond to the shielding member by an etching process, and retaining the portions of the second electrode layer, the hard metal mask layer, the contaminated metal layer, and the first electrode layer that correspond to the shielding member, includes: removing the shielding member.

[0012] According to some embodiments of this disclosure, the distance between the first etched bevel and the edge of the dielectric layer material in a first direction is L1, and L1 satisfies the relationship: 1.0mm < L1 < 1.5mm.

[0013] According to some embodiments disclosed herein, the metal hard mask layer includes a first metal hard mask layer and a second metal hard mask layer, wherein the first metal hard mask layer is disposed above the first electrode layer, and the second metal hard mask layer is disposed above the first metal hard mask layer; the step of etching away the portions of the second electrode layer, the metal hard mask layer, the contaminated metal layer, and the first electrode layer that do not correspond to the shielding member, while retaining the portions of the second electrode layer, the metal hard mask layer, the contaminated metal layer, and the first electrode layer that correspond to the shielding member, further includes: removing the portions of the second electrode layer and the second metal hard mask layer that do not correspond to the shielding member and leaving them on the upper surface of the first metal hard mask layer; and removing the portions of the first metal hard mask layer and the first electrode layer that do not correspond to the shielding member.

[0014] The gate according to the embodiments of this disclosure is applicable to the manufacturing method of the gate described above, and includes: a first electrode layer; a contaminated metal layer disposed on the upper side of the first electrode layer; a metal hard mask layer disposed on the upper side of the contaminated metal layer; and a second electrode layer disposed on the upper side of the metal hard mask layer, wherein the first electrode layer, the contaminated metal layer, the metal hard mask layer, and the second electrode layer are all flush with each other on both sides in a first direction.

[0015] According to some embodiments of this disclosure, the thickness of the metal hard mask layer in the vertical direction is D, and D satisfies the relationship: 10nm≤D≤40nm.

[0016] According to some embodiments of this disclosure, the material of the metal hard mask layer includes at least one of titanium nitride, tungsten, and thallium.

[0017] According to some embodiments of this disclosure, the size of the selector in the first direction is L2, and L2 satisfies the relationship: 40nm≤L2≤100nm.

[0018] According to some embodiments of this disclosure, the selector has a rectangular cross-section in the vertical direction; and / or the selector has a trapezoidal cross-section in the vertical direction, wherein at least one side of the trapezoid in the first direction is an inclined plane, and the inclined plane has an inclination angle of α relative to the horizontal plane, wherein α satisfies the relationship: 75° < α < 90°.

[0019] Additional aspects and advantages of this disclosure will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of this disclosure. Attached Figure Description

[0020] The above and / or additional aspects and advantages of this disclosure will become apparent and readily understood from the description of the embodiments taken in conjunction with the following drawings, in which:

[0021] Figure 1 is a manufacturing process diagram of a selector according to an embodiment of the present disclosure;

[0022] Figure 2 is a manufacturing process diagram of a gate according to an embodiment of the present disclosure;

[0023] Figure 3 is a manufacturing process diagram of a selector according to an embodiment of the present disclosure;

[0024] Figure 4 is a manufacturing process diagram of a gate according to an embodiment of the present disclosure;

[0025] Figure 5 is a manufacturing process diagram of a gate according to an embodiment of the present disclosure;

[0026] Figure 6 is a schematic diagram of a gate and dielectric layer material according to some embodiments of the present disclosure;

[0027] Figure 7 is a flowchart of a method for manufacturing a selector according to an embodiment of the present disclosure;

[0028] Figure 8 is a schematic diagram of the gate and dielectric layer material according to some other embodiments of this disclosure.

[0029] Figure label:

[0030] 100. Strobe;

[0031] 200. Dielectric layer material;

[0032] 10. First electrode layer; 11. Second etching bevel;

[0033] 20. Contaminated metal layer; 21. First etched slope;

[0034] 30. Metal hard mask layer; 40. Second electrode layer; 50. Masking component. Detailed Implementation

[0035] The embodiments of this disclosure are described in detail below. The embodiments described with reference to the accompanying drawings are exemplary. The embodiments of this disclosure are described in detail below.

[0036] The following figures, with reference to Figures 1-7, illustrate a method for manufacturing a selector 100 according to an embodiment of the present disclosure. This method for manufacturing the selector 100 is applicable to the selector 100.

[0037] Referring to Figures 1-7, the manufacturing method of the selector 100 according to the embodiments of this disclosure mainly includes the following steps:

[0038] S1. Deposit a first electrode layer 10 on dielectric material 200;

[0039] S2. Deposit a contaminated metal layer 20 on the first electrode layer 10;

[0040] S3. Perform edge etching on the contaminated metal layer 20 to form a first etching slope 21 on one side of the contaminated metal layer 20 in the first direction;

[0041] S4. Deposit a metal hard mask layer 30 on the contaminated metal layer 20, wherein the metal hard mask layer 30 at least covers the upper side of the contaminated metal layer 20 and the first etched slope 21.

[0042] S5. Deposit a second electrode layer 40 on the metal hard mask layer 30;

[0043] S6. A shielding element 50 is provided on the second electrode layer 40;

[0044] S7. Remove the portions of the second electrode layer 40, the metal hard mask layer 30, the contaminated metal layer 20 and the first electrode layer 10 that do not correspond to the shielding member 50 by etching process, and retain the portions of the second electrode layer 40, the metal hard mask layer 30, the contaminated metal layer 20 and the first electrode layer 10 that correspond to the shielding member 50.

[0045] Specifically, when manufacturing the selector 100 according to the manufacturing method of the selector 100 in this application, a dielectric layer material 200 can be selected as the substrate first, and a first electrode layer 10 can be deposited on the dielectric layer material 200 to ensure the reliability of the first electrode layer 10 on the dielectric layer material 200. This facilitates the manufacturing of the selector 100 in subsequent processes and helps to ensure the structural reliability of the selector 100. After depositing the first electrode layer 10, a contamination metal layer 20 can be deposited on the first electrode layer 10.

[0046] It should be noted that the contamination metal layer 20 contains at least one of the following metal components: silver, ruthenium, niobium, iridium, and platinum, and the contamination metal layer 20 is a necessary structure of the selector 100. The dielectric layer material 200 includes, but is not limited to, a wafer, and the metal components involved in the wafer manufacturing process include, but are not limited to, at least one of the following metal components: nickel, iron, copper, tantalum, tungsten, and titanium. Specifically, the metal contained in the contamination metal layer 20 of the selector 100 is different from the metal involved in the wafer manufacturing process. After the contamination metal layer 20 is deposited on the wafer, the subsequent processes of the selector 100 will reuse the equipment cavity and transfer arm from the wafer manufacturing process. If the contamination metal layer 20 is exposed, the metal therein will contaminate the equipment cavity and transfer arm in the subsequent processes of the selector 100, which will cause the contaminated equipment cavity and transfer arm to be unusable in the wafer manufacturing process.

[0047] In existing technologies, edge etching is performed after all metal films have been deposited to facilitate subsequent processes. However, due to the limitations of edge etching, the contaminating metal layer forms a relatively long slope, which exposes the contaminating metal layer in subsequent processes, posing a risk of contaminating the equipment cavity. In the embodiments disclosed in this paper, edge etching is performed immediately after the contaminating metal layer is deposited, and a metal hard mask layer is deposited on top of the contaminating metal layer to prevent the contaminating metal from being exposed. All processes following the deposition of the metal hard mask layer remain on this metal hard mask layer.

[0048] Furthermore, after depositing the contaminated metal layer 20 on the first electrode layer 10, edge etching can be performed on the contaminated metal layer 20 to form a first etching bevel 21 on one side of the contaminated metal layer 20 in the first direction. This eliminates the metal film on the back of the device, allowing the first electrode layer 10 and the contaminated metal layer 20 to be positioned away from the edge. Consequently, the selector 100 can be adapted for gripping by the machine tool and transfer arm in subsequent processes, ensuring the normal operation of the machine tool cavity and transfer arm in subsequent processes. Furthermore, after forming the first etching bevel 21 through the edge etching process, the contaminated metal layer 20 is exposed.

[0049] In the embodiments disclosed herein, the first direction is the diameter direction of the wafer substrate, and one side of the contaminated metal layer 20 in the first direction is etched to facilitate the fabrication of subsequent processes of the selector 100.

[0050] Furthermore, after etching the crystal edges of the contaminated metal layer 20, a metal hard mask layer 30 is deposited on the contaminated metal layer 20. The metal hard mask layer 30 covers at least the upper side of the contaminated metal layer 20 and the first etched slope 21.

[0051] In the embodiments disclosed herein, the metal hard mask layer 30 is formed by physical vapor deposition (PVD). PVD technology has advantages such as simple process and environmental friendliness, which can simplify the fabrication process of the selector 100, reduce the fabrication difficulty of the metal hard mask layer 30, and improve the fabrication efficiency of the selector 100. The portion of the metal hard mask layer 30 covering the first etched slope 21 is also a slope.

[0052] Then, a second electrode layer 40 is deposited on the metal hard mask layer 30. The portion of the second electrode layer 40 corresponding to the first etching slope 21 is also a slope.

[0053] This configuration not only allows the device to be tilted to one side in the first direction to facilitate the operation of subsequent processes of the selector 100, but also prevents the exposure of the contamination metal layer 20, thus avoiding contamination of subsequent processes by the contamination metal and improving the process reliability of the selector 100.

[0054] After depositing the second electrode layer 40, the side of the second electrode layer 40 away from the metal hard mask layer 30 and the back side of the dielectric layer material 200 can be cleaned. This can prevent residual contaminating metal from remaining on the side of the second electrode layer 40 away from the metal hard mask layer 30 and the back side of the dielectric layer material 200, thus preventing contamination of the equipment and conveyor arms in subsequent processes and avoiding losses in the selector 100 process due to metal contamination.

[0055] Furthermore, a shielding element 50 is provided on the second electrode layer 40. The shielding element 50 includes, but is not limited to, a hard mask and photoresist, which can shield the upper part of the second electrode layer 40. Then, the portions of the second electrode layer 40, the metal hard mask layer 30, the contaminated metal layer 20, and the first electrode layer 10 that do not correspond to the shielding element 50 are etched away by an etching process, so as to retain the portions of the second electrode layer 40, the metal hard mask layer 30, the contaminated metal layer 20, and the first electrode layer 10 that correspond to the shielding element 50. In this way, the shape formed by the shielding element 50 can be transferred from the second electrode layer 40 to the first electrode layer 10. In the embodiments disclosed herein, the etching process includes, but is not limited to, dry etching.

[0056] As shown in Figures 2 and 7, step S3 further includes:

[0057] S3-1 Simultaneously, at least a portion of the first electrode layer 10 is etched at the crystal edge to form a second etching slope 11 on at least a portion of one side of the first electrode layer 10, wherein the first etching slope 21 and the second etching slope 11 have the same tilt angle and are flush with each other.

[0058] Specifically, in this application, both the first electrode layer 10 and the contaminated metal layer 20 are disposed on the upper side of the dielectric layer material 200. While etching the crystal edge of the contaminated metal layer 20, at least a portion of the first electrode layer 10 on the lower side of the contaminated metal layer 20 is also etched to ensure that the contaminated metal layer 20 is completely etched. A second etching slope 11 is formed on the side of at least a portion of the first electrode layer 10 corresponding to the crystal edge etching.

[0059] In the embodiments disclosed herein, the contaminated metal layer 20 and the first electrode layer 10 are simultaneously etched at their crystal edges. This results in the first etched bevel 21 and the second etched bevel 11 having the same tilt angle and being flush with each other. This arrangement ensures the flatness of the first etched bevel 21 and the second etched bevel 11, and allows both the first etched bevel 21 and the second etched bevel 11 to meet the requirements of subsequent processes.

[0060] As shown in Figures 3, 4, 5, and 7, step S4 further includes:

[0061] S4-1, The metal hard mask layer 30 also covers at least a portion of the second etched slope 11.

[0062] Specifically, while covering the first etching slope 21, the metal hard mask layer 30 also covers at least part of the second etching slope 11 formed on one side of the first electrode layer 10. This ensures the reliability of the metal hard mask layer 30 in covering the contaminated metal layer 20 and ensures that the contaminated metal layer 20 is completely disposed under the metal hard mask layer 30. This effectively prevents the contaminated metal layer 20 from being exposed to the machine cavity and conveyor arm in subsequent contamination processes, thereby improving the process reliability of the selector 100.

[0063] As shown in Figures 5-7, after step S7, the following steps are also included:

[0064] S8, Remove obstructions 50.

[0065] Specifically, after the pattern of the masking member 50 is transferred to the second electrode layer 40, the metal hard mask layer 30, the contaminated metal layer 20 and the first electrode layer 10 by dry etching, the masking member 50 needs to be removed. In this way, the remaining second electrode layer 40, metal hard mask layer 30, contaminated metal layer 20 and first electrode layer 10 constitute the structure of the selector 100 to ensure the normal function of the selector 100.

[0066] As shown in Figure 2, the distance between the first etched slope 21 and the edge of the dielectric layer material 200 in the first direction is L1, and L1 satisfies the relationship: 1.0mm < L1 < 1.5mm.

[0067] In the disclosed embodiment, the distance between the first etching bevel 21 and the edge of the dielectric layer material 200 in the first direction is set to L1, where L1 > 1.0 mm. In step S4, the physical vapor deposition process thins the material in the portion 1.0 mm from the edge of the dielectric layer material 200 in the first direction, resulting in a weaker structure of the metal hard mask layer 30 in this portion. If the distance between the first etching bevel 21 and the edge of the dielectric layer material 200 in the first direction is less than 1.0 mm, at least a portion of the contaminated metal layer 20 will remain below the thinned portion of the metal hard mask layer 30. This portion of the metal hard mask layer 30 is prone to breakage in subsequent etching processes, increasing the risk of exposure of the contaminated metal layer 20. Therefore, to ensure the safety of the metal hard mask layer 30 in blocking the contaminated metal layer 20, the distance between the first etching bevel 21 and the edge of the dielectric layer material 200 in the first direction needs to be greater than 1.0 mm to completely etch the contaminated metal layer 20 within 1.0 mm of the edge of the dielectric layer material 200 in the first direction.

[0068] In the embodiments disclosed herein, the distance between the first etching bevel 21 and the edge of the dielectric layer material 200 in the first direction is set to L1, where L1 < 1.5 mm. During the manufacturing process of the selector 100, the etching equipment etches from the edge of the dielectric layer material 200 toward its center, and because the limit of the equipment etching distance is close to 1.5 mm, the distance between the first etching bevel 21 and the edge of the dielectric layer material 200 in the first direction does not exceed 1.5 mm.

[0069] In the embodiments disclosed herein, the metal hard mask layer 30 includes a first metal hard mask layer and a second metal hard mask layer. The first metal hard mask layer is disposed above the first electrode layer 10, and the second metal hard mask layer is disposed above the first metal hard mask layer. In step S7, a machine tool and a transfer arm that do not contain contaminating metal are first used to remove the portions of the second electrode layer 40 and the second metal hard mask layer that do not correspond to the shielding member 50. This etching process is performed on the upper surface of the first metal hard mask layer. Then, a machine tool and a transfer arm that contain contaminating metal are used to etch the first metal hard mask layer and the first electrode layer 10 below it. With this configuration, the first metal hard mask layer can prevent the contaminating metal layer 20 from being exposed when the machine tool and transfer arm that do not contain contaminating metal are working, and can prevent the machine tool and transfer arm that do not contain contaminating metal from being contaminated by contaminating metal, thereby effectively improving the manufacturing process reliability of the selector 100.

[0070] Referring to Figures 6 and 7, the selector 100 according to the embodiments disclosed herein may mainly include: a first electrode layer 10, a contaminated metal layer 20, a metal hard mask layer 30, and a second electrode layer 40, wherein the contaminated metal layer 20 is disposed on the upper side of the first electrode layer 10, the metal hard mask layer 30 is disposed on the upper side of the contaminated metal layer 20, and the second electrode layer 40 is disposed on the upper side of the metal hard mask layer 30. The first electrode layer 10, the contaminated metal layer 20, the metal hard mask layer 30, and the second electrode layer 40 are all flush with each other on both sides in a first direction.

[0071] Specifically, in the embodiments disclosed herein, a metal hard mask layer 30 is deposited on top of the contaminated metal layer 20, and a second collector layer is deposited on top of the metal hard mask layer 30. In this way, during the manufacturing process of the selector 100, the metal hard mask layer 30 can first shield the contaminated metal layer 20, thereby preventing the contaminated metal layer 20 from being exposed in subsequent processes. This can prevent the contaminated metal layer 20 from contaminating the machine cavity and conveyor arm in subsequent processes, thereby improving the reliability of subsequent processes.

[0072] Furthermore, the second electrode layer 40 is disposed on the upper side of the metal hard mask layer 30. With this arrangement, the metal hard mask layer 30 is disposed between the contaminated metal layer 20 and the second electrode layer 40, which can reduce the contact resistance between the second electrode layer 40 and the contaminated metal layer 20, thereby improving the performance of the selector 100.

[0073] As shown in Figure 6, the thickness of the metal hard mask layer 30 in the vertical direction is D, and D satisfies the relationship: 10nm ≤ D ≤ 40nm. Specifically, when setting the metal hard mask layer 30 in the selector 100, the metal hard mask layer 30 needs to meet certain thickness requirements. If the thickness of the metal hard mask layer 30 is less than 10nm, the metal hard mask layer 30 is too thin, the structural strength is weak, and it is easy to break, which will easily lead to the exposure of the contaminated metal layer 20, and thus contaminate the subsequent process equipment of the selector 100. If the thickness of the metal hard mask layer 30 is greater than 40nm, the thickness of the metal hard mask layer 30 is too thick, which will affect the structural performance of the selector 100. Therefore, setting the thickness of the metal hard mask layer 30 between 10nm and 40nm can not only ensure the structural reliability of the metal hard mask layer 30, but also ensure the structural performance of the selector 100.

[0074] According to the embodiments disclosed herein, the material of the metal hard mask layer 30 in this application includes at least one of titanium nitride, tungsten, and thallium, which can ensure the reliability of the metal hard mask layer 30 in covering the contaminated metal layer 20 and preventing the contaminated metal layer 20 from being exposed to subsequent processes.

[0075] Referring to Figure 6, the dimension of the selector 100 in the first direction is L2, and L2 satisfies the relationship: 40nm ≤ L2 ≤ 100nm. Specifically, the number of selectors 100 on the dielectric layer material 200 is unlimited. Setting the dimension of the selector 100 in the first direction to no more than 100nm not only facilitates the placement of multiple selectors 100 on the dielectric layer material 200, but also ensures the structural independence of each selector 100.

[0076] Furthermore, the multiple gates 100 on the dielectric layer material 200 need to be interconnected by metal. If the size of the gate 100 in the first direction is too small, it will result in insufficient process window for the metal interconnect. Therefore, the size of the gate 100 in the first direction needs to be not less than 40nm. It should also be noted that the problem of insufficient metal interconnect window between multiple gates 100 can be avoided by adjusting the design.

[0077] According to some embodiments disclosed herein, and in conjunction with Figure 6, the selector 100 has a rectangular cross-section in the vertical direction. This allows both sides of the selector 100 in the first direction to be perpendicular to the surface of the dielectric layer material 200, i.e., the selector 100 is cylindrical. This ensures that the bottom of the second electrode layer 40 corresponds vertically to the bottom of the first electrode layer 10. This arrangement provides sufficient spacing between adjacent selectors 100, preventing leakage caused by adjacent selectors 100 being too close.

[0078] According to other embodiments disclosed herein, and in conjunction with Figure 7, the selector 100 has a trapezoidal cross-section in the vertical direction. One side of the trapezoid in the first direction is an inclined surface, and the other side is perpendicular to the surface of the dielectric layer material 200. The inclination angle of the inclined surface relative to the horizontal plane is α, and α satisfies the relationship: 75° < α < 90°. Specifically, in the embodiments disclosed herein, the side of the selector 100 that is perpendicular in the vertical direction can be spaced apart from adjacent selectors 100 by a sufficiently large space, while the other side is an inclined surface.

[0079] If the inclination angle of the ramp on the first direction side of the selector 100 relative to the horizontal plane does not exceed 75°, the distance between the ramp and the adjacent selector 100 will be too small, causing leakage due to the adjacent selectors 100 being too close on one side. If the inclination angle of the ramp on the first direction side of the selector 100 relative to the horizontal plane is not less than 90°, it will lead to insufficient filling at the bottom of the selector 100. To avoid leakage and filling problems between adjacent selectors 100, the inclination angle of the ramp on the first direction side of the selector 100 relative to the horizontal plane is set between 75° and 90°.

[0080] According to further embodiments of this disclosure, the selector 100 has a trapezoidal cross-section in the vertical direction, with both sides of the trapezoid in the first direction being inclined planes, and the other side being perpendicular to the surface of the dielectric layer material 200. The inclination angle of the inclined plane relative to the horizontal plane is α, and α satisfies the relationship: 75° < α < 90°. Specifically, both sides of the selector 100 in the first direction are inclined planes, and the inclination angle of both inclined planes relative to the horizontal plane is set between 75° and 90°. This not only prevents leakage current caused by the side distance of adjacent selectors 100 in the first direction being too close, but also ensures filling reliability.

[0081] In the embodiments disclosed herein, the inclination angles of the two inclined surfaces of the trapezoid in the first direction relative to the horizontal plane are selectively set to the same angle.

[0082] In the description of this disclosure, it should be understood that the terms “center,” “longitudinal,” “lateral,” “length,” “width,” “thickness,” “upper,” “lower,” “front,” “rear,” “left,” “right,” “vertical,” “horizontal,” “top,” “bottom,” “inner,” “outer,” “clockwise,” “counterclockwise,” “circumferential,” “radial,” and “circumferential” indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this disclosure and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this disclosure.

[0083] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "illustrative embodiment," "example," "specific example," or "some examples," etc., refer to a specific feature, structure, material, or characteristic described in connection with that embodiment or example, which is included in at least one embodiment or example disclosed herein. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example.

[0084] Although embodiments of the present disclosure have been shown and described, those skilled in the art will understand that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the present disclosure, the scope of which is defined by the claims and their equivalents.

Claims

1. A method for manufacturing a selector, characterized in that, Includes the following steps: A first electrode layer (10) is deposited on a dielectric layer material (200); A contaminated metal layer (20) is deposited on the first electrode layer (10); The contaminated metal layer (20) is etched at the crystal edge to form a first etch slope (21) on one side of the contaminated metal layer (20) in a first direction; A metal hard mask layer (30) is deposited on the contaminated metal layer (20), wherein the metal hard mask layer (30) at least covers the upper side of the contaminated metal layer (20) and the first etched slope (21); A second electrode layer (40) is deposited on the metal hard mask layer (30); A shielding element (50) is provided on the second electrode layer (40); The portions of the second electrode layer (40), the metal hard mask layer (30), the contaminated metal layer (20), and the first electrode layer (10) that do not correspond to the shielding member (50) are etched away by an etching process, while the portions of the second electrode layer (40), the metal hard mask layer (30), the contaminated metal layer (20), and the first electrode layer (10) that correspond to the shielding member (50) are retained.

2. The method for manufacturing the selector according to claim 1, characterized in that, The step of etching the contaminated metal layer (20) at its edges to form a first etching slope (21) on one side of the contaminated metal layer (20) further includes: Simultaneously, at least a portion of the first electrode layer (10) is etched at the crystal edge to form a second etching slope (11) on at least a portion of one side of the first electrode layer (10), wherein the first etching slope (21) and the second etching slope (11) have the same inclination angle and are flush with each other.

3. The method for manufacturing the selector according to claim 2, characterized in that, The step of depositing a metal hard mask layer (30) on the contaminated metal layer (20), wherein the metal hard mask layer (30) at least covers the upper side of the contaminated metal layer (20) and the etched slope (21), further includes: The metal hard mask layer (30) also covers at least a portion of the second etched bevel (11).

4. The method for manufacturing the selector according to claim 1, characterized in that, The step of etching away the portions of the second electrode layer (40), the metal hard mask layer (30), the contaminated metal layer (20), and the first electrode layer (10) that do not correspond to the shielding member (50) by etching process, and retaining the portions of the second electrode layer (40), the metal hard mask layer (30), the contaminated metal layer (20), and the first electrode layer (10) that correspond to the shielding member (50), includes the following steps: Remove the obstruction (50).

5. The method for manufacturing the selector according to claim 1, characterized in that, The distance between the first etched bevel (21) and the edge of the dielectric layer material (200) in the first direction is L1, and L1 satisfies the relationship: 1.0mm < L1 < 1.5mm.

6. The method for manufacturing the selector according to claim 1, characterized in that, The metal hard mask layer (30) includes a first metal hard mask layer and a second metal hard mask layer, wherein the first metal hard mask layer is disposed on the upper side of the first electrode layer (10), and the second metal hard mask layer is disposed on the upper side of the first metal hard mask layer; The etching process removes the portions of the second electrode layer (40), the metal hard mask layer (30), the contaminated metal layer (20), and the first electrode layer (10) that do not correspond to the shielding member (50), while retaining the portions of the second electrode layer (40), the metal hard mask layer (30), the contaminated metal layer (20), and the first electrode layer (10) that correspond to the shielding member (50). The portions of the second electrode layer (40) and the second metal hard mask layer that do not correspond to the shielding member (50) are removed and remain on the upper surface of the first metal hard mask layer; Remove the portions of the first metal hard mask layer and the first electrode layer (10) that do not correspond to the shielding member (50).

7. A gate, applicable to a method of manufacturing the gate (100) of any one of claims 1-6, characterized in that, include: First electrode layer (10); A contaminated metal layer (20) is disposed on the upper side of the first electrode layer (10); A hard metal mask layer (30) is disposed on the upper side of the contaminated metal layer (20); The second electrode layer (40) is disposed on the upper side of the metal hard mask layer (30), and the first electrode layer (10), the contaminated metal layer (20), the metal hard mask layer (30) and the second electrode layer (40) are flush with each other on both sides in the first direction.

8. The selector according to claim 7, characterized in that, The thickness of the metal hard mask layer (30) in the vertical direction is D, and D satisfies the relationship: 10nm≤D≤40nm.

9. The selector according to claim 7, characterized in that, The material of the metal hard mask layer (30) includes at least one of titanium nitride, tungsten and thallium.

10. The selector according to claim 7, characterized in that, The size of the selector (100) in the first direction is L2, and L2 satisfies the relationship: 40nm≤L2≤100nm.

11. The selector according to claim 7, characterized in that, The selector (100) has a rectangular cross-section in the vertical direction; and / or The selector (100) has a trapezoidal cross-section in the vertical direction, and at least one side of the trapezoid in the first direction is an inclined plane. The inclination angle of the inclined plane relative to the horizontal plane is α, and α satisfies the relationship: 75° < α < 90°.

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