Scrubbing apparatus

Abstract

A scrubbing apparatus according to the present invention comprises: a first scrubber for primarily scrubbing gas; and a second scrubber for secondarily scrubbing the gas. The first scrubber includes: a first chamber defining a first scrubbing space; a first scrubbing plate having at least a portion thereof fixed to the inner wall of the first chamber; a first solution supply nozzle for supplying a first scrubbing solution onto the upper surface of the first scrubbing plate; and a plurality of first scrubbing holes passing through the first scrubbing plate. The second scrubber includes: a second chamber defining a second scrubbing space for scrubbing another portion of impurities included in the gas; a second scrubbing plate disposed in the second chamber and having at least a portion thereof fixed to the inner wall of the second chamber; a second solution supply nozzle for supplying a second scrubbing solution onto the upper surface of the second scrubbing plate; and a plurality of second scrubbing holes passing through the second scrubbing plate.

Description

scrubbing device

[0001] The present invention relates to a scrubbing device. Specifically, it relates to a scrubbing device that improves scrubbing efficiency and space efficiency by utilizing a plurality of scrubbers.

[0002]

[0003] Modern industry produces a wide variety of air pollutants, many of which have very low permissible human concentrations. Therefore, removing and controlling air pollutants from gases emitted from various industries is a critical issue.

[0004] Current air pollution control equipment includes dust collectors and scrubbers. Their efficiency is determined by the type of pollutant being treated. Scrubbers are widely used because they can simultaneously treat dust, exhaust gases, and high-temperature gases.

[0005] Specifically, scrubbers are classified into dry, wet, and plasma types depending on the method of treating the exhaust gas, and among these, wet scrubbers are used in a process of dissolving water-soluble components in the gas into the liquid by contacting the exhaust gas with a liquid.

[0006] Wet scrubbers typically use a scrubbing solution to effectively remove harmful components from exhaust gases. When in contact with harmful components, the scrubbing solution neutralizes them through chemical reactions, thus selecting the solution that best reacts with the harmful components in the exhaust gases is crucial. The performance of a wet scrubber depends on the ability of the scrubbing solution to effectively contact the exhaust gases. Therefore, conventional scrubbers typically install a filler to ensure sufficient contact between the scrubbing solution and the exhaust gases, and spray nozzles are installed to supply the scrubbing solution with small particles.

[0007] Recently, other technologies are being studied to improve the contact area between the scrubbing solution and the exhaust gas.

[0008]

[0009] The technical problem to be solved by the present invention is to provide a scrubbing device that improves scrubbing efficiency by increasing the contact area between a scrubbing solution and a gas, and to provide a scrubbing device that improves space efficiency by using a plurality of scrubbers.

[0010] The problems to be solved by the present invention are not limited to the problems mentioned above, and other problems not mentioned will be clearly understood by those skilled in the art from the description below.

[0011]

[0012] According to some embodiments of the present invention for achieving the above technical problem, a scrubbing device includes a first scrubber for primarily scrubbing a gas, and a second scrubber connected to the first scrubber for secondarily scrubbing the gas that has passed through the first scrubber, wherein the first scrubber includes a first chamber defining a first scrubbing space for scrubbing a portion of impurities included in the gas, a first scrubbing plate disposed within the first chamber and having at least a portion fixed to an inner wall of the first chamber, a first solution supply nozzle for supplying a first scrubbing solution to an upper surface of the first scrubbing plate, and a plurality of first scrubbing holes penetrating the first scrubbing plate, and the second scrubber includes a second chamber defining a second scrubbing space for scrubbing another portion of the impurities included in the gas, a second scrubbing plate disposed within the second chamber and having at least a portion fixed to an inner wall of the second chamber, and a second scrubbing plate. It includes a second solution supply nozzle for supplying a second scrubbing solution to the upper surface, and a plurality of second scrubbing holes penetrating the second scrubbing plate.

[0013] In the scrubbing device of the present invention, the first scrubber and the second scrubber are connected to each other. Since the gas is scrubbed primarily by the first scrubber and secondarily by the second scrubber, the scrubbing efficiency can be improved and space efficiency can be enhanced.

[0014] In some embodiments, some of the impurities contained in the gas are dissolved in the first scrubbing solution by passing upwardly through the plurality of first scrubbing holes within the first chamber, and other some of the impurities contained in the gas are dissolved in the second scrubbing solution by passing upwardly through the plurality of second scrubbing holes within the second chamber.

[0015] As the gas rises through the scrubbing hole, bubbles are created within the scrubbing solution, thereby increasing the contact area between the gas and the scrubbing solution. Accordingly, the efficiency of the scrubbing process can be improved.

[0016] In some embodiments, a scrubbing device further comprises a third scrubber connected to the second scrubber and configured to tertiarily scrub the gas passing through the second scrubber, the third scrubber comprising a third chamber defining a third scrubbing space for scrubbing another portion of the impurities contained in the gas, a third scrubbing plate disposed within the third chamber and at least a portion of which is fixed to an inner wall of the third chamber, a third solution supply nozzle for supplying a third scrubbing solution to an upper surface of the third scrubbing plate, and a plurality of third scrubbing holes penetrating the third scrubbing plate, wherein the first scrubber, the second scrubber, and the third scrubber are arranged in one direction.

[0017] A scrubbing device according to some embodiments further comprises a fourth scrubber connected to the third scrubber and performing a fourth scrubbing of the gas passing through the third scrubber, wherein the first to fourth scrubbers are arranged in one direction or in an 'L' shape.

[0018] In some embodiments, a scrubbing device further comprises a third scrubber connected to the second scrubber and configured to tertiarily scrub the gas passing through the second scrubber, the third scrubber comprising a third chamber defining a third scrubbing space for scrubbing another portion of the impurities contained in the gas, a third scrubbing plate disposed within the third chamber and at least a portion of which is fixed to an inner wall of the third chamber, a third solution supply nozzle for supplying a third scrubbing solution to an upper surface of the third scrubbing plate, and a plurality of third scrubbing holes penetrating the third scrubbing plate, wherein the first scrubber, the second scrubber, and the third scrubber are arranged in an 'L' shape.

[0019] In some embodiments, the first scrubber includes a first gas inlet through which the gas is introduced into the first chamber, and a first gas outlet through which the gas is discharged outside the first chamber, wherein the first gas inlet is formed in one side wall of the first chamber, and the gas outlet is formed in the other side wall opposite the one side wall.

[0020] In some embodiments, the first gas inlet and the first gas outlet are formed at the same vertical level.

[0021] In some embodiments, the second scrubber includes a second gas inlet through which the gas is introduced into the second chamber, and the first gas outlet and the second gas inlet are connected to each other.

[0022] In some embodiments, the vertical level of the first gas outlet is higher than the vertical level of the second gas inlet.

[0023] In some embodiments, the first scrubber includes a first gas inlet through which the gas is introduced into the first chamber, and a first gas outlet through which the gas is discharged outside the first chamber, wherein the first gas inlet is formed in one side wall of the first chamber, and the first gas outlet is formed in the other side wall intersecting the one side wall.

[0024] In some embodiments, the first scrubber comprises a first solution storage tank in which the first scrubbing solution in which a first impurity among the impurities is dissolved is stored, and the second scrubber comprises a second solution storage tank in which the second scrubbing solution in which a second impurity among the impurities is dissolved is stored.

[0025] In some embodiments, the concentration of the first impurity in the solution stored in the first solution storage tank is higher than the concentration of the second impurity in the solution stored in the second solution storage tank.

[0026] Specific details of other embodiments are included in the description and drawings of the invention.

[0027]

[0028] The scrubbing device of the present invention comprises at least one scrubbing plate. Scrubbing holes are formed within the scrubbing plate, penetrating the scrubbing plate. As gas rises and passes through the scrubbing holes, bubbles may be formed within the scrubbing solution flowing on the upper surface of the scrubbing plate.

[0029] As the bubbles form, the contact area between the scrubbing solution and the gas increases. This increased contact area allows more hydrophilic impurities in the gas to dissolve in the scrubbing solution. Consequently, the gas, free of contaminants (impurities), can be discharged outside the scrubbing device.

[0030] Additionally, the scrubbing device of the present invention includes at least one scrubber. A plurality of scrubbers may be connected unidirectionally, in an "L" shape, or in a "ㄷ" shape. Therefore, a scrubbing device with improved space efficiency can be provided.

[0031]

[0032] FIG. 1 is a drawing briefly illustrating a scrubbing system including a scrubbing device according to some embodiments of the present invention.

[0033] Fig. 2 is an exemplary perspective view for explaining the scrubbing device of Fig. 1.

[0034] Fig. 3 is an exemplary cross-sectional view for explaining the scrubbing device of Fig. 1.

[0035] Figure 4 is an enlarged view of area P of Figure 3.

[0036] FIGS. 5 to 12 are drawings for explaining a scrubbing device according to some other embodiments of the present invention.

[0037] FIG. 13 and FIG. 14 are drawings for explaining an operating method of a scrubbing device according to some embodiments of the present invention.

[0038]

[0039] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the attached drawings. The advantages and features of the present invention, and methods for achieving them, will become clear with reference to the embodiments described in detail below together with the attached drawings. However, the present invention is not limited to the embodiments described below, but can be implemented in various different forms. These embodiments are provided only to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the invention, and the present invention is defined only by the scope of the claims. Like reference numerals refer to like elements throughout the specification.

[0040] In addition, the terminology used in this specification is used to describe embodiments and is not intended to limit and / or restrict the disclosed invention. The singular expression includes plural expression unless the context clearly indicates otherwise. In this specification, the terms "comprise" or "have" and the like are intended to specify the presence of a feature, number, step, operation, component, part, or combination thereof described in the specification, but do not exclude in advance the possibility of the presence or addition of one or more other features, numbers, steps, operations, components, parts, or combinations thereof.

[0041] Additionally, terms including ordinal numbers such as “first,” “second,” etc. used herein may be used to describe various components, but the components are not limited by the terms, and the terms are used only for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the first component may be referred to as the second component, and similarly, the second component may also be referred to as the first component. The term “and / or” includes any combination of a plurality of related listed items or any item among a plurality of related listed items.

[0042] Meanwhile, the terms “upper”, “lower”, “side wall”, “top surface” and “lower surface” used in the description below are defined based on the drawing, and the shape and position of each component are not limited by these terms.

[0043] The terminology used herein is for the purpose of describing embodiments only and is not intended to limit the present invention. In this specification, the singular also includes the plural unless the context clearly dictates otherwise. As used herein, the terms "comprises" and / or "comprising" do not exclude the presence or addition of one or more other components, steps, operations, and / or elements.

[0044] Unless otherwise defined, all terms (including technical and scientific terms) used herein may be used in their common sense to those of ordinary skill in the art to which the present invention pertains. Furthermore, terms defined in commonly used dictionaries are not to be interpreted ideally or excessively unless explicitly and specifically defined otherwise.

[0045] Hereinafter, embodiments of the present invention will be described in detail with reference to the attached drawings. In describing with reference to the attached drawings, identical or corresponding components are given the same reference numerals regardless of the drawing symbols, and redundant descriptions thereof will be omitted.

[0046]

[0047] Hereinafter, a scrubbing system (1000) including a scrubbing device (20) according to some embodiments of the present invention will first be described with reference to FIG. 1. FIG. 1 is a drawing for briefly explaining a scrubbing system including a scrubbing device according to some embodiments of the present invention.

[0048] Referring to FIG. 1, a scrubbing system (1000) according to some embodiments of the present invention may include a process chamber (10), a scrubbing device (20), an exhaust gas discharge chamber (30), a first scrubbing solution discharge chamber (40a), and a second scrubbing solution discharge chamber (40b).

[0049] The scrubbing device (20) may include at least one scrubber. For example, the scrubbing device (20) may include a first scrubber (20a) and a second scrubber (20b), but the technical idea of ​​the present invention is not limited thereto.

[0050] The process chamber (10) may be a chamber utilized in various industrial fields. The various industrial fields may be a plant field, a battery field, a thermal power plant field, a steel field, a semiconductor field, a chemical field, and / or an oil and gas plant field.

[0051] If the scrubbing system (1000) is utilized in the semiconductor field, the process chamber (10) may be a chamber where semiconductor processes are performed. To manufacture a semiconductor device, various semiconductor processes must be performed on a wafer. For example, a film must be deposited on the wafer (deposition process), and the film must be etched (etch process) to form a pattern included in the semiconductor device. Furthermore, after the deposition process and / or etching process are performed, a cleaning process must be performed to clean the wafer and / or the process chamber (10).

[0052] The deposition process may include, for example, physical vapor deposition (PVD), chemical vapor deposition (CVD), and / or atomic layer deposition (ALD). The etching process may include, for example, a dry etching process, a wet etching process, and / or an ashing process. The cleaning process may include, for example, a wet cleaning process, a dry cleaning process, and / or a vapor cleaning process.

[0053] If the scrubbing system (1000) is utilized in the oil and gas plant industry, the process chamber (10) may be a chamber in which a plant process is performed.

[0054] When various processes are performed within a process chamber (10), byproducts may be generated. These byproducts may contain substances harmful to the human body. If these byproducts contain substances harmful to the human body, they must be removed and discharged. A scrubbing device (20) can be used to remove substances harmful to the human body from the byproducts generated within the process chamber (10).

[0055] A first pipe (11) may be arranged between the process chamber (10) and the scrubbing device (20). One end of the first pipe (11) may be connected to the process chamber (10), and the other end of the first pipe (11) may be connected to the scrubbing device (20). Specifically, the other end of the first pipe (11) may be connected to the first scrubber (20a). A gas (G) discharged from the process chamber (10) through the first pipe (11) may be provided to the scrubbing device (20) (see drawing reference numeral 50). The gas (G) may contain impurities. The impurities may be substances harmful to the human body. The impurities may include hydrophilic gases.

[0056] In some embodiments, a first valve (12) may be connected to the first pipe (11). The first valve (12) may control the pressure and flow rate of gas (G) provided to the scrubbing device (20) through the first pipe (11).

[0057] The scrubbing device (20) can scrub the gas (G) provided from the process chamber (10). Impurities contained in the gas (G) can be dissolved in the scrubbing solution and stored in the first and second scrubbing solution discharge chambers (40a, 40b).

[0058] Specifically, gas (G) is provided to a first scrubber (20a). The first scrubber (20a) can scrub the gas (G), and some of the impurities contained in the gas (G) can be dissolved in a first scrubbing solution and stored in a first scrubbing solution discharge chamber (40a). The first scrubbing solution can include a first scrubbing solution (225a) and a first scrubbing solution (227a) which will be described later.

[0059] The gas (G') that has been scrubbed primarily by the first scrubber (20a) is provided to the second scrubber (20b) (see drawing reference numeral 55). The second scrubber (20b) can scrub the gas (G') that has been scrubbed primarily for a second time, and some of the impurities contained in the gas (G') that has been scrubbed primarily can be dissolved in a second scrubbing solution and stored in a second scrubbing solution discharge chamber (40b). The second scrubbing solution can include a second_1 scrubbing solution (225b) and a second_2 scrubbing solution (227b) that will be described later.

[0060] The gas (G'') from which impurities have been removed can be stored in the exhaust gas discharge chamber (30). A detailed description of the scrubbing device (20) will be described later using FIGS. 2 to 12.

[0061] The first scrubbing solution discharge chamber (40a) may be connected to the first scrubber (20a). The first scrubbing solution discharge chamber (40a) and the first scrubber (20a) may be connected to each other via a second pipe (21a). One end of the second pipe (21a) may be connected to the first scrubber (20a), and the other end of the second pipe (21a) may be connected to the first scrubbing solution discharge chamber (40a). The scrubbing solution (S1) in which the first impurity is dissolved may be moved from the first scrubber (20a) to the first scrubbing solution discharge chamber (40a) via the second pipe (21a) (see drawing reference numeral 60).

[0062] In some embodiments, a second valve (22a) may be connected to the second pipe (21a). The second valve (22a) may control the pressure and flow rate of the first impurity-dissolved scrubbing solution (S1) provided to the first scrubbing solution discharge chamber (40a) through the second pipe (21a).

[0063] The second scrubbing solution discharge chamber (40b) may be connected to the second scrubber (20b). The second scrubbing solution discharge chamber (40b) and the second scrubber (20b) may be connected to each other via a third pipe (21b). One end of the third pipe (21b) may be connected to the second scrubber (20b), and the other end of the third pipe (21b) may be connected to the second scrubbing solution discharge chamber (40b). The scrubbing solution (S2) in which the second impurity is dissolved may be moved from the second scrubber (20b) to the second scrubbing solution discharge chamber (40b) via the third pipe (21b) (see drawing reference numeral 65).

[0064] In some embodiments, a third valve (22b) may be connected to the third pipe (21b). The third valve (22b) may control the pressure and flow rate of the second impurity-dissolved scrubbing solution (S2) provided to the second scrubbing solution discharge chamber (40b) through the third pipe (21b).

[0065] The exhaust gas discharge chamber (30) may be connected to the scrubbing device (20). Specifically, the exhaust gas discharge chamber (30) may be connected to the second scrubber (20b). The exhaust gas discharge chamber (30) and the scrubbing device (20) may be connected to each other through a fourth pipe (23). One end of the fourth pipe (23) may be connected to the scrubbing device (20), and the other end of the fourth pipe (23) may be connected to the exhaust gas discharge chamber (30). Through the fourth pipe (23), the gas (G'') from which impurities have been removed may move from the scrubbing device (20) to the exhaust gas discharge chamber (30) (see drawing reference numeral 70).

[0066] In some embodiments, a fourth valve (24) may be connected to the fourth pipe (23). The fourth valve (24) may control the pressure and flow rate of the impurity-free gas (G'') provided to the exhaust gas discharge chamber (30) through the fourth pipe (23).

[0067] In some embodiments, the first scrubber (20a) may further include a first gas inlet (25a) and a first gas outlet (26a). Gas (G) may be introduced into the first scrubber (20a) through the first gas inlet (25a). Gas (G') from which impurities have been partially removed may be discharged to the outside of the first scrubber (20a) through the first gas outlet (26a). The second scrubber (20b) may further include a second gas inlet (25b) and a second gas outlet (26b). Gas (G') from which impurities have been partially removed may be introduced into the second scrubber (20b) through the second gas inlet (25b). Gas (G'') from which impurities have been removed may be discharged to the outside of the second scrubber (20b) through the second gas outlet (26b).

[0068] In some embodiments, the impurities scrubbed in the first scrubber (20a) and the impurities scrubbed in the second scrubber (20b) may be the same or different.

[0069] When a scrubbing device (20) according to some embodiments of the present invention is utilized in the aforementioned industrial fields, contaminants generated after a process can be effectively separated and removed. Consequently, environmental pollution problems can be reduced.

[0070]

[0071] Hereinafter, a scrubbing device according to some embodiments of the present invention will be described in detail with reference to FIGS. 2 to 4.

[0072] Fig. 2 is an exemplary perspective view for explaining the scrubbing device of Fig. 1. Fig. 3 is an exemplary cross-sectional view for explaining the scrubbing device of Fig. 1. Fig. 4 is an enlarged view of area P of Fig. 3.

[0073] Referring to FIGS. 2 to 4, a scrubbing device (20) according to some embodiments of the present invention may include a first scrubber (20a) and a second scrubber (20b). The first scrubber (20a) and the second scrubber (20b) may be substantially identical.

[0074] The first scrubber (20a) and the second scrubber (20b) may be connected to each other. Specifically, the first gas outlet (26a) of the first scrubber (20a) and the second gas inlet (25b) of the second scrubber (20b) may be connected to each other through a pipe. Accordingly, the gas (G' in FIG. 1) that has been initially scrubbed by the first scrubber (20a) may be provided to the second scrubber (20b) through the first gas outlet (26a) and the second gas inlet (25b).

[0075] The first scrubber (20a) may include a first chamber (210a), a first separation wall (220a), a first scrubbing plate (230a), a first scrubbing plate (240a), a first scrubbing plate (250a), a first spray nozzle (221a), a first solution supply nozzle (223a), and a first demister (260a).

[0076] First, a first chamber (210a) may be provided. The first chamber (210a) may be an external housing of the first scrubber (20a). A gas (G in FIG. 1) may be provided into the interior of the first chamber (210a). The gas may contain impurities. The impurities may include first impurities and second impurities. The first impurities may be scrubbed primarily in the first scrubber (20a). The second impurities may be scrubbed secondarily in the second scrubber (20b).

[0077] Specifically, the gas can be supplied into the interior of the first chamber (210a) through the first gas injection port (25a). The first gas injection port (25a) may be formed on the side wall of the first chamber (210a) or on the upper wall of the first chamber (210a). In addition, the first gas injection port (25a) may be formed on the upper or lower side wall of the first chamber (210a).

[0078] The first impurity may be dissolved in the first scrubbing solution within the first chamber (210a). The first chamber (210a) may define a first scrubbing space (215a). The first scrubbing space (215a) may be a space where a first scrubbing process is performed, in which the first impurity is first dissolved in the first scrubbing solution.

[0079] In some embodiments, the first scrubbing space (215a) may include a first_first sub-space (215_1a) and a first_second sub-space (215_2a). The first_first sub-space (215_1a) and the first_second sub-space (215_2a) may be separated by a first separating wall (220a). The first_first sub-space (215_1a) and the first_second sub-space (215_2a) may be defined by the first separating wall (220a).

[0080] The first separation wall (220a) may be positioned within the first chamber (210a). In some embodiments, the first separation wall (220a) may be attached to the upper wall of the first chamber (210a). The first separation wall (220a) may extend from the upper wall of the first chamber (210a) in a second direction (D2). The second direction (D2) may be a direction perpendicular to the ground.

[0081] The first scrubbing process may be performed in the first sub-space (215_1a). The first scrubbing process may be performed in the second sub-space (215_2a). The first scrubbing process may be a process in which some of the first impurities are dissolved in the first scrubbing solution (225a).

[0082] The above 1_2 scrubbing process may be a process in which another part of the first impurity is dissolved in the 1_2 scrubbing solution (227a). The 1_1 scrubbing process and the 1_2 scrubbing process may constitute the first scrubbing process.

[0083] In some embodiments, the first_1 scrubbing solution (225a) may be the same as or different from the first_2 scrubbing solution (227a).

[0084] In this specification, the first direction (D1) and the third direction (D3) may intersect with each other. The first direction (D1) and the second direction (D2) may intersect with each other. The second direction (D2) and the third direction (D3) may intersect with each other. That is, in this specification, the first direction (D1), the second direction (D2), and the third direction (D3) may be substantially perpendicular to each other.

[0085] In some embodiments, a first scrubbing plate (230a), a first scrubbing plate (240a), and a first scrubbing plate (250a) may be arranged inside the first scrubbing space (215a).

[0086] In FIGS. 2 to 4, the first scrubber (20a) of the present invention is illustrated as including three scrubbing plates, but the technical concept of the present invention is not limited thereto. Scrubbers according to some embodiments of the present invention may include at least one scrubbing plate. That is, the scrubbing plates may be arranged one or two inside the scrubber, or of course, four or more may be arranged.

[0087] The first scrubbing plate (230a) may be disposed at the lowest position among the scrubbing plates disposed within the first sub-space (215_2a). One end of the first scrubbing plate (230a) may be connected to and fixed to the first separating wall (220a). The first scrubbing plate (230a) may be connected to the first separating wall (220a) and may extend in a first direction (D1) intersecting the first separating wall (220a). More specifically, the first scrubbing plate (230a) may be placed on a plane along which the first direction (D1) and the third direction (D3) extend.

[0088] In some embodiments, another portion of the first_1 scrubbing plate (230a) may be connected and fixed to the inner walls of the first chamber (210a). Specifically, the first_1 scrubbing plate (230a) may be connected to the inner walls of the first chamber (210a) that intersect the first separating wall (220a).

[0089] However, the first_1 scrubbing plate (230a) may not be connected to and fixed to one side wall of the first chamber (210a) facing the first separation wall (220a). The first_1 scrubbing plate (230a) may be spaced apart from the one side wall of the first chamber (210a) in the first direction (D1). The space from the other end of the first_1 scrubbing plate (230a) to the one side wall of the first chamber (210a) may be a space in which the 1_2 scrubbing solution (227b) to be described later flows downward (for example, in the second direction (D2)).

[0090] The first scrubber (20a) according to some embodiments may further include a first_1 scrubbing hole (230H_a) and a first_1 scrubbing wall (235a).

[0091] The first scrubbing hole (230H_a) may be formed inside the first scrubbing plate (230a). The first scrubbing hole (230H_a) may extend from the lower surface of the first scrubbing plate (230a) to the upper surface of the first scrubbing plate (230a). That is, the first scrubbing hole (230H_a) may penetrate the first scrubbing plate (230a) in the second direction (D2). Gas (G in FIG. 1) may rise in the second direction (D2) by passing through the first scrubbing hole (230H_a) (see reference numeral 230u).

[0092] The upper surface of the first scrubbing plate (230a) can face the first demister (260a) to be described later, and the lower surface of the first scrubbing plate (230a) can face the first solution storage tank (270a) to be described later.

[0093] The first scrubbing wall (235a) may be attached to the other end of the first scrubbing plate (230a). The first scrubbing wall (235a) may be interposed between the first scrubbing plate (230a) and the one side wall of the first chamber (210a). The first scrubbing wall (235a) may extend in the second direction (D2). In some embodiments, a portion of the first scrubbing wall (235a) may protrude from the upper surface of the first scrubbing plate (230a) in the second direction (D2). Another portion of the first scrubbing wall (235a) may protrude from the lower surface of the first scrubbing plate (230a) in the second direction (D2).

[0094] The length in the second direction (D2) of the portion protruding in the second direction (D2) from the upper surface of the 1_1 scrubbing plate (230a) among the 1_1 scrubbing walls (235a) may be smaller than the length in the second direction (D2) of the portion protruding in the second direction (D2) from the lower surface of the 1_1 scrubbing plate (230a), but the technical idea of ​​the present invention is not limited thereto.

[0095] In some embodiments, at least a portion of the first scrubbing plate (230a) of the first scrubbing wall (235a) protruding in the second direction (D2) from the lower surface thereof may be placed in the scrubbing solution (275a) in which the first impurity is dissolved, but the technical idea of ​​the present invention is not limited thereto.

[0096] The first_2 scrubbing plate (240a) may be disposed on the first_1 scrubbing plate (230a). Specifically, the first_2 scrubbing plate (240a) may be disposed on the upper surface of the first_1 scrubbing plate (230a). One end of the first_2 scrubbing plate (240a) may be connected to and fixed to the one side wall of the first chamber (210a). The first_2 scrubbing plate (240a) may be connected to the one side wall of the first chamber (210a) and may extend in a first direction (D1) intersecting the one side wall of the first chamber (210a). More specifically, the first_2 scrubbing plate (240a) may be placed on a plane on which the first direction (D1) and the third direction (D3) extend.

[0097] Likewise, the first_second scrubbing plate (240a) can be connected and fixed to the side walls of another first chamber (210a) intersecting the first separation wall (220a).

[0098] However, the other end of the first_2 scrubbing plate (240a) may not be connected to and fixed to the first separating wall (220a). The other end of the first_2 scrubbing plate (240a) may be spaced apart from the side wall of the first separating wall (220a) in the first direction (D1). The space from the other end of the first_2 scrubbing plate (240a) to the first separating wall (220a) may be a space in which the 1_2 scrubbing solution (227b), which will be described later, flows downward (for example, in the second direction (D2)).

[0099] According to some embodiments, the first scrubber (20a) may further include a first_second scrubbing hole (240H_a) and a first_second scrubbing wall (245a).

[0100] The first_2 scrubbing hole (240H_a) may be formed inside the first_2 scrubbing plate (240a). The first_2 scrubbing hole (240H_a) may extend from the lower surface of the first_2 scrubbing plate (240a) to the upper surface of the first_2 scrubbing plate (240a). The first_2 scrubbing hole (240H_a) may penetrate the first_2 scrubbing plate (240a) in the second direction (D2). Gas (G in FIG. 1) may rise in the second direction (D2) by passing through the first_2 scrubbing hole (240H_a).

[0101] The upper surface of the 1st_2 scrubbing plate (240a) can face the 1st demister (260a) to be described later, and the lower surface of the 1st_2 scrubbing plate (240a) can face the upper surface of the 1st scrubbing plate (230a).

[0102] The first_2 scrubbing wall (245a) may be attached to the other end of the first_2 scrubbing plate (240a). The first_2 scrubbing wall (245a) may be interposed between the first_2 scrubbing plate (240a) and the first separating wall (220a). The first_2 scrubbing wall (245a) may extend in the second direction (D2). In some embodiments, a portion of the first_2 scrubbing wall (245a) may protrude from the upper surface of the first_2 scrubbing plate (240a) in the second direction (D2). Another portion of the first_2 scrubbing wall (245a) may protrude from the lower surface of the first_2 scrubbing plate (240a) in the second direction (D2).

[0103] The length in the second direction (D2) of the portion protruding in the second direction (D2) from the upper surface of the first_2 scrubbing plate (240a) among the first_2 scrubbing walls (245a) may be smaller than the length in the second direction (D2) of the portion protruding in the second direction (D2) from the lower surface of the first_2 scrubbing plate (240a), but the technical idea of ​​the present invention is not limited thereto.

[0104] In some embodiments, the first_1 scrubbing plate (230a) and the first_2 scrubbing plate (240a) do not completely overlap in the second direction (D2). The first_1 scrubbing plate (230a) and the first_2 scrubbing plate (240a) may be arranged in a zigzag manner. Accordingly, the first_2 scrubbing solution (227a) that flows downward beyond the first_2 scrubbing wall (245a) may be discharged onto the upper surface of the first_1 scrubbing plate (230a). In other words, the center of the first_1 scrubbing plate (230a) and the center of the first_2 scrubbing plate (240a) may be offset from each other.

[0105] The first-third scrubbing plate (250a) may be placed on the first-second scrubbing plate (240a). Specifically, the first-third scrubbing plate (250a) may be placed on the upper surface of the first-second scrubbing plate (240a). One end of the first-third scrubbing plate (250a) may be connected to and fixed to the first separating wall (220a). The first-third scrubbing plate (250a) may be connected to the first separating wall (220a) and extend in a first direction (D1) intersecting the first separating wall (220a).

[0106] More specifically, the first-third scrubbing plate (250a) may be placed on a plane extending in the first direction (D1) and the third direction (D3). Similarly, the first-third scrubbing plate (250a) may be connected to and fixed to the side walls of the first chamber (210a) intersecting the first separation wall (220a).

[0107] However, the other end of the 1_3 scrubbing plate (250a) may not be connected to and fixed to the one side wall of the first chamber (210a). The other end of the 1_3 scrubbing plate (250a) may be spaced apart from the one side wall of the first chamber (210a) in the first direction (D1). The space from the other end of the 1_3 scrubbing plate (250a) to the one side wall of the first chamber (210a) may be a space in which the 1_2 scrubbing solution (227b) to be described later flows downward (for example, in the second direction (D2)).

[0108] According to some embodiments, the first scrubber (20a) may further include a first_3 scrubbing hole (250H_a) and a first_3 scrubbing wall (255a).

[0109] The first-third scrubbing hole (250H_a) may be formed inside the first-third scrubbing plate (250a). The first-third scrubbing hole (250H_a) may extend from the lower surface of the first-third scrubbing plate (250a) to the upper surface of the first-third scrubbing plate (250a). The first-third scrubbing hole (250H_a) may penetrate the first-third scrubbing plate (250a) in the second direction (D2). Gas (G in FIG. 1) may rise in the second direction (D2) by passing through the first-third scrubbing hole (250H_a).

[0110] The upper surface of the 1_3 scrubbing plate (250a) can face the 1st demister (260a) to be described later, and the lower surface of the 1_3 scrubbing plate (250a) can face the upper surface of the 1_2 scrubbing plate (240a).

[0111] The first-third scrubbing wall (255a) may be attached to the other end of the first-third scrubbing plate (250a). The first-third scrubbing wall (255a) may be interposed between the first-third scrubbing plate (250a) and the one side wall of the first chamber (210a). The first-third scrubbing wall (255a) may extend in the second direction (D2).

[0112] In some embodiments, a portion of the first_3 scrubbing wall (255a) may protrude in a second direction (D2) from the upper surface of the first_3 scrubbing plate (250a). Another portion of the first_3 scrubbing wall (255a) may protrude in a second direction (D2) from the lower surface of the first_3 scrubbing plate (250a).

[0113] The length in the second direction (D2) of the portion protruding in the second direction (D2) from the upper surface of the 1_3 scrubbing plate (250a) among the 1_3 scrubbing walls (255a) may be shorter than the length in the second direction (D2) of the portion protruding in the second direction (D2) from the lower surface of the 1_3 scrubbing plate (250a), but the technical idea of ​​the present invention is not limited thereto.

[0114] In some embodiments, the first_3 scrubbing plate (250a) and the first_2 scrubbing plate (240a) do not completely overlap in the second direction (D2). The first_3 scrubbing plate (250a) and the first_2 scrubbing plate (240a) may be arranged in a zigzag manner. The first_2 scrubbing solution (227a) that flows downward past the first_3 scrubbing wall (255a) may be discharged onto the upper surface of the first_2 scrubbing plate (240a). In other words, the center of the first_3 scrubbing plate (250a) and the center of the first_2 scrubbing plate (240a) may be offset from each other.

[0115] However, the 1_3 scrubbing plate (250a) and the 1_1 scrubbing plate (230a) can completely overlap in the second direction (D2). That is, the center of the 1_3 scrubbing plate (250a) and the center of the 1_1 scrubbing plate (230a) can overlap in the second direction (D2).

[0116] In some embodiments, the first to third scrubbing holes (230H_a, 240H_a, 250H_a) may completely overlap in the second direction (D2). However, the technical idea of ​​the present invention is not limited thereto. It goes without saying that the first to third scrubbing holes (230H_a, 240H_a, 250H_a) may not completely overlap in the second direction (D2), and may only partially overlap.

[0117] The first solution supply nozzle (223a) may be disposed inside the first chamber (210a). The first solution supply nozzle (223a) may be connected to the upper portion of the first chamber (210a) and may extend in the second direction (D2). The first solution supply nozzle (223a) may be connected to a pipe (not shown) installed outside the first chamber (210a). The first solution supply nozzle (223a) may supply the first_2 scrubbing solution (227a) to the first_2 sub-space (215_2a). The first_2 scrubbing solution (227a) may be supplied from the first solution supply nozzle (223a) and discharged to the upper surface of the first_3 scrubbing plate (250a).

[0118] The first and second scrubbing solutions (227a) may be, for example, water. However, the technical idea of ​​the present invention is not limited thereto.

[0119] The first-second scrubbing solution (227a) may be discharged onto the upper surface of the first-third scrubbing plate (250a) and then flow from the upper surface of the first-third scrubbing plate (250a) toward the first-third scrubbing wall (255a) while the first-second scrubbing process is being performed. At this time, the first-second scrubbing solution (227a) does not flow downward through the first-third scrubbing hole (250H_a). The first-second scrubbing solution (227a) may flow beyond the first-third scrubbing wall (255a) to the lower portion of the first chamber (210a).

[0120] The 1_2 scrubbing solution (227a) that has passed the 1_3 scrubbing wall (255a) is discharged again to the upper surface of the 1_2 scrubbing plate (240a). The 1_2 scrubbing solution (227a) can flow from the upper surface of the 1_2 scrubbing plate (240a) toward the 1_2 scrubbing wall (245a) while the 1_2 scrubbing process is performed. At this time, the 1_2 scrubbing solution (227a) does not flow downward through the 1_2 scrubbing hole (240H_a). The 1_2 scrubbing solution (227a) can flow to the lower portion of the 1st chamber (210a) by passing the 1_2 scrubbing wall (245a).

[0121] Likewise, the 1_2 scrubbing solution (227a) that has passed the 1_2 scrubbing wall (245a) is discharged again to the upper surface of the 1_1 scrubbing plate (230a). The 1_2 scrubbing solution (227a) can flow from the upper surface of the 1_1 scrubbing plate (230a) toward the 1_1 scrubbing wall (235a) while the 1_2 scrubbing process is performed. At this time, the 1_2 scrubbing solution (227a) does not flow downward through the 1_1 scrubbing hole (230H_a). The 1_2 scrubbing solution (227a) can flow to the lower portion of the 1st chamber (210a) beyond the 1_1 scrubbing wall (235a).

[0122] Finally, the 1_2 scrubbing solution (227a) that has passed the 1_1 scrubbing month (235a) may be stored in the 1st solution storage tank (270a) provided at the bottom of the 1st chamber (210a). The 1st solution storage tank (270a) may store the scrubbing solution (275a) in which the first impurity is dissolved. For example, the scrubbing solution (275a) in which the first impurity is dissolved may be a solution in which the first impurity is dissolved in the 1_1 scrubbing solution (225a) and the 1_2 scrubbing solution (227a). For example, the first impurity may be a hydrophilic gas.

[0123] In some embodiments, the hydrophilic gas may be isopropyl alcohol (IPA) and / or ammonia, but the technical idea of ​​the present invention is not limited thereto.

[0124] The first demister (260a) may be placed at the upper portion of the first chamber (210a). The first demister (260a) may be used to remove moisture from the gas after the 1_1 scrubbing process and the 1_2 scrubbing process are performed. After the 1_1 scrubbing process and the 1_2 scrubbing process are performed, a gas (G' in FIG. 1) from which some impurities have been removed may be provided. That is, moisture may be removed from the gas (G' in FIG. 1) from which some impurities have been removed after the 1_1 scrubbing process and the 1_2 scrubbing process are performed using the first demister (260a).

[0125] In some embodiments, the first scrubber (20a) may not include a first demister (260a). That is, the first scrubber (20a) that primarily scrubs the gas may not include a demister, and only the second scrubber (20b) that finally scrubs the gas may include a demister.

[0126] The first demister (260a) can be connected to the first gas outlet (26a). The gas filtered through the first demister (260a) can be discharged to the outside of the first chamber (210a) through the first gas outlet (26a).

[0127] In some embodiments, the first_1 sub-space (215_1a) may be defined by the inner wall of the first chamber (210a) and the first separation wall (220a). The first_1 scrubbing process may be performed in the first_1 sub-space (215_1a).

[0128] In some embodiments, the first_1 scrubbing solution (225a) may be provided into the interior of the first chamber (210a) through the first spray nozzle (221a). The first_1 scrubbing solution (225a) may be provided into the first_1 sub-space (215_1a) through the first spray nozzle (221a).

[0129] The first scrubbing solution (225a) is provided from the upper part to the lower part of the first sub-space (215_1a), and while the gas (G in FIG. 1) flows from the upper part to the lower part of the first sub-space (215_1a), at least a portion of the first impurities contained in the gas may be dissolved in the first scrubbing solution (225a). In some embodiments, the first scrubbing solution (225a) may include water. However, the technical idea of ​​the present invention is not limited thereto.

[0130] In some embodiments, the first spray nozzle (221a) may be a spray nozzle. The first spray nozzle (221a) may supply the first_1 scrubbing solution (225a) having small particles to the first_1 sub-space (215_1a). Accordingly, the contact area between the first_1 scrubbing solution (225a) and the gas may be improved. Accordingly, a scrubbing device (20) with improved scrubbing efficiency may be provided.

[0131] The first spray nozzle (221a) may be installed at the top of the first chamber (210a). Although not shown, the first spray nozzle (221a) may be connected to a pipe installed outside the first chamber (210a).

[0132] In some embodiments, a first gas inlet (25a) may be installed on one side of the first_1 sub-space (215_1a). A gas (G in FIG. 1) injected into the interior of the first chamber (210a) may be injected into the interior of the first chamber (210a) through the first gas inlet (25a). The first gas inlet (25a) may be connected to the first pipe (11), and since the other side of the first pipe (11) is connected to the process chamber (10 in FIG. 1), the gas (G in FIG. 1) injected into the gas inlet may be provided from the process chamber.

[0133] In some embodiments, the first gas inlet (25a) and the first gas outlet (26a) may be formed on opposite side walls. That is, the vertical level of the first gas inlet (25a) and the vertical level of the first gas outlet (26a) may be the same. However, the technical concept of the present invention is not limited thereto.

[0134] In another embodiment, the first gas inlet (25a) may be formed on one side wall of the first chamber (210a). The first gas outlet (26a) may be formed on the other side wall intersecting the one side wall of the first chamber (210a). That is, the first gas inlet (25a) and the first gas outlet (26a) may be formed on side walls intersecting each other. However, the technical idea of ​​the present invention is not limited thereto.

[0135] By arranging the first gas inlet (25a) and the first gas outlet (26a) in various ways, the space efficiency of the scrubbing device (20) according to some embodiments can be improved.

[0136] In some embodiments, a negative pressure may be provided to the first scrubbing space (215a) through the first gas inlet (25a) and the first gas outlet (26a). For example, the pressure at the first gas inlet (25a) and the pressure at the first gas outlet (26a) may be different from each other. Accordingly, the gas (G in FIG. 1) may flow from the first gas inlet (25a) toward the first gas outlet (26a). The first_1 scrubbing process and the first_2 scrubbing process may be performed by utilizing the difference between the pressure at the first gas inlet (25a) and the pressure at the first gas outlet (26a).

[0137] In some embodiments, the first sub-space (215_1a) and the second sub-space (215b) may be connected to each other at the bottom of the first chamber (210a). The first sub-space (215_1a) and the second sub-space (215b) may be connected to each other on the first solution storage tank (270a).

[0138] That is, the gas injected into the 1st sub-space (215_1a) can flow from the upper part of the 1st sub-space (215_1a) to the lower part of the 1st sub-space (215_1a) and can be injected into the second sub-space (215b) from the lower part of the first chamber (210a). In the second sub-space (215b), the gas (G in FIG. 1) can rise in the second direction (D2).

[0139] When using a scrubbing device (20) according to some embodiments, the contact area of ​​a gas in contact with a scrubbing solution can be improved. Specifically, the contact area between the scrubbing solution and the gas can be improved by forming bubbles within the scrubbing solution.

[0140] For example, in FIG. 4, gas (G in FIG. 1) can pass through the first scrubbing hole (230H_a) and rise in the second direction (D2) (see drawing symbol 230u).

[0141] After the gas (G in FIG. 1) passes upwardly through the first scrubbing hole (230H_a), a bubble (BBL) may be formed on the upper surface of the first scrubbing plate (230a). The bubble (BBL) may be formed inside the first scrubbing solution (227a). At the portion where the bubble (BBL) and the first scrubbing solution (227a) come into contact, impurities contained in the gas may be dissolved in the first scrubbing solution (227a).

[0142] Although not shown, the gas (G in FIG. 1) may rise in the second direction (D2) after passing through the 1_1st scrubbing hole (230H_a) and then passing through the 1_2nd scrubbing hole (240H_a). After the gas (G in FIG. 1) passes through the 1_2nd scrubbing hole (240H_a), bubbles may be formed on the upper surface of the 1_2nd scrubbing plate (240a). Similarly, after the gas (G in FIG. 1) passes through the 1_2nd scrubbing hole (240H_a), it may rise in the second direction (D2) by passing through the 1_3rd scrubbing hole (250H_a). After the gas (G in FIG. 1) passes upward through the 1_3 scrubbing hole (250H_a), bubbles may be formed on the upper surface of the 1_3 scrubbing plate (250a).

[0143] When bubbles (BBL) are formed within the first and second scrubbing solutions (227a), the contact area between the gas and the scrubbing solution can be improved. Accordingly, a scrubbing device (20) with improved scrubbing efficiency can be provided.

[0144] Below, the second scrubber (20b) will be described. Since the second scrubber (20b) may be substantially the same as the first scrubber (20a), descriptions of overlapping contents will be briefly explained or omitted.

[0145] The second scrubber (20b) may include a second chamber (210b), a second separating wall (220b), a second_1 scrubbing plate (230b), a second_2 scrubbing plate (240b), a second_3 scrubbing plate (250b), a second spray nozzle (221b), a second solution supply nozzle (223b), and a second demister (260b).

[0146] First, a second chamber (210b) may be provided. The second chamber (210b) may be an external housing of the second scrubber (20b). A gas (G' in FIG. 1) that has been scrubbed primarily may be provided to the second chamber (210b). The gas that has been scrubbed primarily by passing through the first chamber (210a) may have some impurities removed from it.

[0147] For example, the gas that has been scrubbed in the first stage can be provided into the interior of the second chamber (210b) through the second gas inlet (25b). The second gas inlet (25b) may be formed on the side wall of the second chamber (210b). The second gas inlet (25b) may be formed at the same vertical level as the first gas outlet (26a). For example, the height of the first gas outlet (26a) and the height of the second gas inlet (25b) based on the bottom surface of the first chamber (210a) may be the same, but the technical idea of ​​the present invention is not limited thereto.

[0148] Inside the second chamber (210b), the second impurity contained in the gas that has been scrubbed primarily may be dissolved in the second scrubbing solution. The second chamber (210b) may define a second scrubbing space (215b). The second scrubbing space (215b) may be a space where a second scrubbing process in which the second impurity is dissolved in the scrubbing solution for the second time is performed. Of course, the first impurity and the second impurity may be the same or different.

[0149] In some embodiments, the second scrubbing space (215b) may include a second_first sub-space (215_1b) and a second_second sub-space (215_2b). The second_first sub-space (215_1b) and the second_second sub-space (215_2b) may be separated by a second separating wall (220b). The second_first sub-space (215_1b) and the second_second sub-space (215_2b) may be defined by the second separating wall (220b).

[0150] The second separation wall (220b) may be positioned within the second chamber (210b). In some embodiments, the second separation wall (220b) may be attached to the upper wall of the second chamber (210b). The second separation wall (220b) may extend from the upper wall of the second chamber (210b) in a second direction (D2). The second direction (D2) may be a direction perpendicular to the ground.

[0151] A second_1 scrubbing process may be performed in a second_1 sub-space (215_1b). A second_2 scrubbing process may be performed in a second_2 sub-space (215_2b). The second_1 scrubbing process may be a process in which some of the second impurities are dissolved in a second_1 scrubbing solution (225b). The second_2 scrubbing process may be a process in which another part of the second impurities are dissolved in a second_2 scrubbing solution (227b). The second_1 scrubbing process and the second_2 scrubbing process may constitute the second scrubbing process.

[0152] In some embodiments, the second_1 scrubbing solution (225b) may be the same as or different from the second_2 scrubbing solution (227b).

[0153] A second_1 scrubbing plate (230b), a second_2 scrubbing plate (240b), and a second_3 scrubbing plate (250b) may be placed inside the second scrubbing space (215b).

[0154] In FIGS. 2 to 4, the second scrubber (20b) of the present invention is illustrated as including three scrubbing plates, but the technical concept of the present invention is not limited thereto. Scrubbers according to some embodiments of the present invention may include at least one scrubbing plate. That is, the scrubbing plates may be arranged one or two inside the scrubber, or of course, four or more may be arranged.

[0155] In some embodiments, the number of scrubbing plates arranged in the first scrubber (20a) may be different from the number of scrubbing plates arranged in the second scrubber (20b). For example, the number of scrubbing plates arranged in the first scrubber (20a) may be greater than the number of scrubbing plates arranged in the second scrubber (20b). By arranging more scrubbing plates in the first scrubber (20a), which primarily scrubs the gas, the scrubbing efficiency can be improved and space efficiency can be enhanced.

[0156] The second_1 scrubbing plate (230b), the second_2 scrubbing plate (240b), and the second_3 scrubbing plate (250b) may be substantially the same as the first_1 scrubbing plate (230a), the first_2 scrubbing plate (240a), and the first_3 scrubbing plate (250a), respectively, and therefore, a detailed description thereof will be omitted.

[0157] According to some embodiments, the second scrubber (20b) may further include a second_1 scrubbing hole (230H_b), a second_1 scrubbing wall (235b), a second_2 scrubbing hole (240H_b), a second_2 scrubbing wall (245b), a second_3 scrubbing hole (250H_b), and a second_3 scrubbing wall (255b).

[0158] The 2nd_1st scrubbing hole (230H_b), the 2nd_1st scrubbing wall (235b), the 2nd_2nd scrubbing hole (240H_b), the 2nd_2nd scrubbing wall (245b), the 2nd_3rd scrubbing hole (250H_b), and the 2nd_3rd scrubbing wall (255b) may be substantially the same as the 1st_1st scrubbing hole (230H_a), the 1st_1st scrubbing wall (235a), the 1st_2nd scrubbing hole (240H_a), the 1st_2nd scrubbing wall (245a), the 1st_3rd scrubbing hole (250H_a), and the 1st_3rd scrubbing wall (255a), respectively, and therefore, a detailed description thereof will be omitted.

[0159] The second solution supply nozzle (223b) may be disposed inside the second chamber (210b). The second solution supply nozzle (223b) may be connected to the upper portion of the second chamber (210b) and may extend in the second direction (D2). The second solution supply nozzle (223b) may be connected to a pipe (not shown) installed outside the second chamber (210b). The second solution supply nozzle (223b) may supply the second_2 scrubbing solution (227b) to the second_2 sub-space (215_2b). The second_2 scrubbing solution (227b) may be supplied from the second solution supply nozzle (223b) and discharged to the upper surface of the second_3 scrubbing plate (250b).

[0160] The second scrubbing solution (227b) may be, for example, water. However, the technical idea of ​​the present invention is not limited thereto.

[0161] The second scrubbing solution (227b) may be discharged onto the upper surface of the second scrubbing plate (250b) and then flow from the upper surface of the second scrubbing plate (250b) toward the second scrubbing wall (255b) while the second scrubbing process is being performed. At this time, the second scrubbing solution (227b) does not flow downward through the second scrubbing hole (250H_b). The second scrubbing solution (227b) may flow over the second scrubbing wall (255b) to the lower portion of the second chamber (210b).

[0162] The second scrubbing solution (227b) that has passed the second scrubbing wall (255b) is discharged again to the upper surface of the second scrubbing plate (240b). The second scrubbing solution (227b) can flow from the upper surface of the second scrubbing plate (240b) toward the second scrubbing wall (245b) while the second scrubbing process is performed. At this time, the second scrubbing solution (227b) does not flow downward through the second scrubbing hole (240H_b). The second scrubbing solution (227b) can flow to the lower portion of the second chamber (210b) by passing the second scrubbing wall (245b).

[0163] Likewise, the second scrubbing solution (227b) that has passed the second scrubbing wall (245b) is discharged again to the upper surface of the second scrubbing plate (230b). The second scrubbing solution (227b) can flow from the upper surface of the second scrubbing plate (230b) toward the second scrubbing wall (235b) while the second scrubbing process is performed. At this time, the second scrubbing solution (227b) does not flow downward through the second scrubbing hole (230H_b). The second scrubbing solution (227b) can flow to the lower portion of the second chamber (210b) beyond the second scrubbing wall (235b).

[0164] Finally, the second scrubbing solution (227b) that has passed the second scrubbing wall (235b) may be stored in the second solution storage tank (270b) provided at the bottom of the second chamber (210b). The second solution storage tank (270b) may store the scrubbing solution (275b) in which the second impurity is dissolved. For example, the scrubbing solution (275b) in which the second impurity is dissolved may be a solution in which the second impurity is dissolved in the second scrubbing solution (225b) and the second scrubbing solution (227b). For example, the second impurity may be a hydrophilic gas.

[0165] In some embodiments, the concentration of the first impurity stored in the first solution storage tank (270a) is higher than the concentration of the second impurity stored in the second solution storage tank (270b). This may be because the amount of impurity scrubbed by the first scrubber (20a) is greater than the amount of impurity scrubbed by the second scrubber (20b).

[0166] The second demister (260b) may be placed on the upper portion of the second chamber (210b). The second demister (260b) may be substantially identical to the first demister (260a). The second demister (260b) may be connected to the second gas outlet (26b). The gas filtered through the second demister (260b) may be discharged to the outside of the second chamber (210b) through the second gas outlet (26b).

[0167] In some embodiments, the second_1 sub-space (215_1b) may be defined by the inner wall of the second chamber (210b) and the second separation wall (220b). The second_1 scrubbing process may be performed in the second_1 sub-space (215_1b).

[0168] In some embodiments, the second_1 scrubbing solution (225b) may be provided into the interior of the second chamber (210b) through the second spray nozzle (221b). The second_1 scrubbing solution (225b) may be provided into the second_1 sub-space (215_1b) through the second spray nozzle (221b).

[0169] The second_1 scrubbing solution (225b) is provided from the upper part to the lower part of the second_1 sub-space (215_1b), and while the gas (G' in FIG. 1) from which some impurities have been removed flows from the upper part to the lower part of the second_1 sub-space (215_1b), at least a portion of the second impurities contained in the gas may be dissolved in the second_1 scrubbing solution (225b). In some embodiments, the second_1 scrubbing solution (225b) may include water. However, the technical idea of ​​the present invention is not limited thereto.

[0170] In some embodiments, the second spray nozzle (221b) may be a spray nozzle. The second spray nozzle (221b) may supply the second_1 scrubbing solution (225b) having small particles to the second_1 sub-space (215_1b). Accordingly, the contact area between the second_1 scrubbing solution (225b) and the gas may be improved. Accordingly, a scrubbing device (20) with improved scrubbing efficiency may be provided.

[0171] The second spray nozzle (221b) may be installed at the top of the second chamber (210b). Although not shown, the second spray nozzle (221b) may be connected to a pipe installed outside the second chamber (210b).

[0172] In some embodiments, the second spray nozzle (221b) and the second solution supply nozzle (223b) may each be connected to the second solution storage tank (270b) via a pipe (not shown) that is connected to the second solution storage tank (270b).

[0173] The solution stored in the second solution storage tank (270b) can be recycled using the above pipe. For example, the second_1 scrubbing solution (225b) provided to the second_1 sub-space (215_1b) through the second spray nozzle (221b) may be a scrubbing solution (275b) in which the second impurities stored in the second solution storage tank (270b) are dissolved. Similarly, the second_2 scrubbing solution (227b) provided to the second_2 sub-space (215_2b) through the second solution supply nozzle (223b) may be a scrubbing solution (275b) in which the second impurities stored in the second solution storage tank (270b) are dissolved.

[0174] In some embodiments, the solution stored in the second solution storage tank (270b) may be recycled in the first scrubber (20a).

[0175] Since the concentration of impurities in the solution stored in the second solution storage tank (270b) is low, the solution stored in the second solution storage tank (270b) can be recycled. In this way, when using the scrubbing device (20) of the present invention, the scrubbing solution can be recycled, and thus, the amount of scrubbing solution used in the scrubbing process can be reduced.

[0176] In some embodiments, a second gas inlet (25b) may be installed on one side of the second_1 sub-space (215_1b). The gas (G' in FIG. 1) from which some impurities have been removed and injected into the interior of the second chamber (210b) may be injected into the interior of the second chamber (210b) through the second gas inlet (25b).

[0177] In some embodiments, a negative pressure may be provided to the second scrubbing space (215b) through the second gas inlet (25b) and the second gas outlet (26b). For example, the pressure at the second gas inlet (25b) and the pressure at the second gas outlet (26b) may be different from each other. Accordingly, the gas (G' in FIG. 1) from which some impurities have been removed may flow from the second gas inlet (25b) toward the second gas outlet (26b). The second_1 scrubbing process and the second_2 scrubbing process may be performed by utilizing the difference between the pressure at the second gas inlet (25b) and the pressure at the second gas outlet (26b).

[0178] In some embodiments, the second_1 sub-space (215_1b) and the second_2 sub-space (215_2b) may be connected to each other at the bottom of the second chamber (210b). The second_1 sub-space (215_1b) and the second_2 sub-space (215_2b) may be connected to each other on the second solution storage tank (270b).

[0179] That is, the gas injected into the 2_1 sub-space (215_1b) can flow from the upper part of the 2_1 sub-space (215_1b) to the lower part of the 2_1 sub-space (215_1b) and can be injected into the 2_2 sub-space (215_2b) from the lower part of the second chamber (210b). The gas (G' in FIG. 1) from which some impurities have been removed in the 2nd sub-space (215b) can rise in the second direction (D2).

[0180] When using a scrubbing device (20) according to some embodiments, the contact area of ​​a gas in contact with a scrubbing solution can be improved. Specifically, the contact area between the scrubbing solution and the gas can be improved by forming bubbles within the scrubbing solution.

[0181] When using a scrubbing device (20) according to some embodiments, gases harmful to the human body (e.g., impurities) can be dissolved in the scrubbing solution. Accordingly, gases harmful to the human body can be removed from byproducts generated after various processes are performed in various industrial fields and discharged outside the scrubbing device (20).

[0182] In addition, when using the scrubbing device (20) of the present invention, impurities can be scrubbed a second time using two scrubbers. Accordingly, a scrubbing device (20) with improved scrubbing efficiency and space efficiency can be provided.

[0183]

[0184] Hereinafter, a scrubbing device according to several other embodiments of the present invention will be described with reference to FIGS. 5 to 12. For convenience of explanation, any content overlapping with that described using FIGS. 2 to 4 will be briefly described or omitted.

[0185] For reference, FIGS. 5, 6, 10, 11, and 12 may each be exemplary cross-sectional views of a scrubbing device according to some embodiments, and FIGS. 7 to 9 may each be plan views of a scrubbing device according to some embodiments.

[0186] First, referring to FIG. 5, the scrubbing device according to some embodiments of the present invention may further include a third scrubber (20c).

[0187] The first to third scrubbers (20a, 20b, 20c) may be arranged in one direction. For example, the first to third scrubbers (20a, 20b, 20c) may be arranged in a long series in the first direction (D1).

[0188] The third scrubber (20c) may include a third chamber (210c), a third separation wall (220c), a third_1 scrubbing plate (230c), a third_2 scrubbing plate (240c), a third_3 scrubbing plate (250c), a third spray nozzle (221c), a third solution supply nozzle (223c), a third_1 scrubbing hole (230H_c), a third_2 scrubbing hole (240H_c), a third_3 scrubbing hole (250H_c), a third_1 scrubbing wall (235c), a third_2 scrubbing wall (245c), a third_3 scrubbing wall (255c), and a third demister (260c).

[0189] Descriptions of the third chamber (210c), the third separation wall (220c), the third_1 scrubbing plate (230c), the third_2 scrubbing plate (240c), the third_3 scrubbing plate (250c), the third spray nozzle (221c), the third solution supply nozzle (223c), the third_1 scrubbing hole (230H_c), the third_2 scrubbing hole (240H_c), the third_3 scrubbing hole (250H_c), the third_1 scrubbing wall (235c), the third_2 scrubbing wall (245c), the third_3 scrubbing wall (255c), and the third demister (260c) may be the same as those described for the first scrubber (20a), and are therefore omitted.

[0190] In some embodiments, the third scrubber (20c) may include a third gas inlet (25c) and a third gas outlet (26c). The gases scrubbed first and second by the first scrubber (20a) and the second scrubber (20b), respectively, may be provided to the third scrubber (20c). The gases may be provided to the third scrubber (20c) through the third gas inlet (25c). The third gas inlet (25c) may be formed at the same vertical level as the second gas outlet (26b). For example, the height of the second gas outlet (26b) and the height of the third gas inlet (25c) may be the same with respect to the bottom surface of the third chamber (210c), but the technical idea of ​​the present invention is not limited thereto.

[0191] Inside the third chamber (210c), the third impurity contained in the gas may be dissolved in the third scrubbing solution. The third scrubbing solution may include a third_1 scrubbing solution (225c) and a third_2 scrubbing solution (227c). The third chamber (210c) may define a third scrubbing space (215c). The third scrubbing space (215c) may be a space in which a third scrubbing process is performed, in which the third impurity contained in the gas is dissolved in the third scrubbing solution for the third time.

[0192] In some embodiments, the third scrubbing space (215c) may include a third_1 sub-space (215_1c) and a third_2 sub-space (215_2c). The third_1 sub-space (215_1c) and the third_2 sub-space (215_2c) may be separated by a third separation wall (220c).

[0193] A third_1 scrubbing process may be performed in a third_1 sub-space (215_1c). A third_2 scrubbing process may be performed in a third_2 sub-space (215_2c). The third_1 scrubbing process may be a process in which some of the third impurities are dissolved in a third_1 scrubbing solution (225c). The third_2 scrubbing process may be a process in which another part of the third impurities are dissolved in a third_2 scrubbing solution (227c). The third_1 scrubbing process and the third_2 scrubbing process may constitute the third scrubbing process. The third_1 scrubbing solution (225c) may be the same as or different from the third_2 scrubbing solution (227c).

[0194] The third solution supply nozzle (223c) may be positioned inside the third chamber (210c). The third solution supply nozzle (223c) may supply the third_2 scrubbing solution (227c) to the third_2 sub-space (215_2c). The third_2 scrubbing solution (227c) may be discharged to the upper surface of the third_3 scrubbing plate (250c). The third_2 scrubbing solution (227c) may be, for example, water. However, the technical idea of ​​the present invention is not limited thereto.

[0195] A scrubbing solution (275c) containing a third impurity dissolved therein may be stored in a third solution storage tank (270c). For example, the scrubbing solution (275c) containing a third impurity dissolved therein may be a solution in which a third impurity is dissolved in a third_1 scrubbing solution (225c) and a third_2 scrubbing solution (227c). For example, the third impurity may be a hydrophilic gas.

[0196] In some embodiments, the concentration of the third impurity stored in the third solution storage tank (270c) is lower than the concentration of the second impurity stored in the second solution storage tank (270b). This may be because the amount of impurity scrubbed by the second scrubber (20b) is greater than the amount of impurity scrubbed by the third scrubber (20c).

[0197] In some embodiments, the third_1 scrubbing solution (225c) may be provided to the third_1 sub-space (215_1c) through the third spray nozzle (221c).

[0198] The third_1 scrubbing solution (225c) is provided from the upper part to the lower part of the third_1 sub-space (215_1c), and while the gas flows from the upper part to the lower part of the third_1 sub-space (215_1c), at least some of the impurities contained in the gas may be dissolved in the third_1 scrubbing solution (225c). In some embodiments, the third_1 scrubbing solution (225c) may include water. However, the technical idea of ​​the present invention is not limited thereto.

[0199] In some embodiments, a negative pressure may be provided to the third scrubbing space (215c) through the third gas inlet (25c) and the third gas outlet (26c). The third_1 scrubbing process and the third_2 scrubbing process may be performed by utilizing the difference between the pressure at the third gas inlet (25c) and the pressure at the third gas outlet (26c).

[0200] In this way, when using the scrubbing device (20) of the present invention, impurities can be scrubbed three times using three scrubbers. Accordingly, a scrubbing device (20) with improved scrubbing efficiency and space efficiency can be provided.

[0201] Referring to FIG. 6, a scrubbing device according to some embodiments of the present invention may further include a third scrubber (20c) and a fourth scrubber (20d).

[0202] The first to fourth scrubbers (20a, 20b, 20c, 20d) may be arranged in one direction. For example, the first to fourth scrubbers (20a, 20b, 20c, 20d) may be arranged in a long series in the first direction (D1).

[0203] The third scrubber (20c) may be the same as that described using FIG. 5, so it is omitted.

[0204] The fourth scrubber (20d) may include a fourth chamber (210d), a fourth separation wall (220d), a fourth_1 scrubbing plate (230d), a fourth_2 scrubbing plate (240d), a fourth_3 scrubbing plate (250d), a fourth spray nozzle (221d), a fourth solution supply nozzle (223d), a fourth_1 scrubbing hole (230H_d), a fourth_2 scrubbing hole (240H_d), a fourth_3 scrubbing hole (250H_d), a fourth_1 scrubbing wall (235d), a fourth_2 scrubbing wall (245d), a fourth_3 scrubbing wall (255d), and a fourth demister (260d).

[0205] The description of the fourth scrubber (20d) may be substantially the same as the description of the third scrubber (20c) described using FIG. 5.

[0206] For example, a thirdly scrubbed gas may be provided to the fourth chamber (210d). The fourth impurities contained in the gas may be scrubbed in the fourth scrubbing space (215d). The fourth scrubbing space (215d) includes a fourth_1 sub-space (215_1d) and a fourth_2 sub-space (215_2d). Some of the fourth impurities may be scrubbed in the fourth_1 sub-space (215_1d), and other parts of the fourth impurities may be scrubbed in the fourth_2 sub-space (215_2d).

[0207] In the 4_1 sub-space (215_1d), some of the fourth impurities are dissolved in the 4_1 scrubbing solution (225d). In the 4_2 sub-space (215_2d), other some of the fourth impurities are dissolved in the 4_2 scrubbing solution (227d).

[0208] The fourth solution storage tank (270d) may store a scrubbing solution (275d) in which the fourth impurity is dissolved. For example, the scrubbing solution (275d) in which the fourth impurity is dissolved may be a solution in which the first impurity is dissolved in the fourth_1 scrubbing solution (225d) and the fourth_2 scrubbing solution (227d). For example, the first impurity may be a hydrophilic gas.

[0209] In some embodiments, the concentration of the fourth impurity stored in the fourth solution storage tank (270d) is lower than the concentration of the third impurity stored in the third solution storage tank (270c). This may be because the amount of impurity scrubbed by the third scrubber (20c) is greater than the amount of impurity scrubbed by the fourth scrubber (20d).

[0210] In some embodiments, a negative pressure may be provided to the fourth scrubbing space (215d) through the fourth gas inlet (25d) and the fourth gas outlet (26d). The fourth_1 scrubbing process and the fourth_2 scrubbing process may be performed by utilizing the difference between the pressure at the fourth gas inlet (25d) and the pressure at the fourth gas outlet (26d).

[0211] In this way, when using the scrubbing device (20) of the present invention, impurities can be scrubbed four times using four scrubbers. Accordingly, a scrubbing device (20) with improved scrubbing efficiency and space efficiency can be provided.

[0212] Referring to FIG. 7, a scrubbing device according to some embodiments of the present invention may further include a third scrubber (20c). The first to third scrubbers (20a, 20b, 20c) may be arranged in an 'L' shape when viewed from a planar perspective.

[0213] First, the first scrubber (20a) and the second scrubber (20b) can be arranged in the first direction (D1). The second scrubber (20b) and the third scrubber (20c) can be arranged in the third direction (D3).

[0214] In the second scrubber (20b), the side wall where the second gas inlet (25b) is formed and the side wall where the second gas outlet (26b) is formed may intersect each other. For example, the side wall where the second gas inlet (25b) is formed may extend in the third direction (D3), while the side wall where the second gas outlet (26b) is formed may extend in the first direction (D1).

[0215] Additionally, the direction in which the second_1 sub-space (215_1b) extends and the direction in which the third_1 sub-space (215_1c) extends may intersect each other. For example, the second_1 sub-space (215_1b) may extend in the third direction (D3), and the third_1 sub-space (215_1c) may extend in the first direction (D1).

[0216] By using a scrubbing device (20) according to some embodiments of the present invention, three scrubbers can be arranged in an 'L' or 'L' shape. Accordingly, a scrubbing device (20) with improved space efficiency can be provided.

[0217] Referring to FIG. 8, a scrubbing device according to some embodiments of the present invention may further include a third scrubber (20c) and a fourth scrubber (20d). The first to fourth scrubbers (20a, 20b, 20c, 20d) may be arranged in an 'L' shape or a 'L' shape when viewed from a planar perspective.

[0218] First, the first scrubber (20a), the second scrubber (20b), and the third scrubber (20c) can be arranged in the first direction (D1). The third scrubber (20c) and the fourth scrubber (20d) can be arranged in the third direction (D3).

[0219] That is, the side wall where the third gas injection port (25c) is formed and the side wall where the third gas discharge port (26c) is formed in the third scrubber (20c) may intersect each other. For example, the side wall where the third gas injection port (25c) is formed may extend in the third direction (D3), while the side wall where the third gas discharge port (26c) is formed may extend in the first direction (D1).

[0220] Additionally, the direction in which the 3rd_1 sub-space (215_1c) extends and the direction in which the 4th_1 sub-space (215_1d) extends may intersect each other. For example, the 3rd_1 sub-space (215_1c) may extend in the third direction (D3), and the 4th_1 sub-space (215_1d) may extend in the first direction (D1).

[0221] Unlike the drawing, the first scrubber (20a) and the second scrubber (20b) may be arranged in the first direction (D1). The second scrubber (20b), the third scrubber (20c), and the fourth scrubber (20d) may be arranged in the third direction (D3). At this time, the side wall in which the second gas inlet (25b) is formed and the side wall in which the second gas outlet (26b) is formed in the second scrubber (20b) may intersect each other. For example, the side wall in which the second gas inlet (25b) is formed may extend in the third direction (D3), while the side wall in which the second gas outlet (26b) is formed may extend in the first direction (D1).

[0222] By using a scrubbing device (20) according to some embodiments of the present invention, four scrubbers can be arranged in an 'L' or 'L' shape. Accordingly, a scrubbing device (20) with improved space efficiency can be provided.

[0223] Referring to FIG. 9, a scrubbing device according to some embodiments of the present invention may further include a third scrubber (20c) and a fourth scrubber (20d). The first to fourth scrubbers (20a, 20b, 20c, 20d) may be arranged in a 'ㄷ' shape or a checkerboard shape.

[0224] For example, the first scrubber (20a) and the second scrubber (20b) may be arranged in the first direction (D1), the second scrubber (20b) and the third scrubber (20c) may be arranged in the third direction (D3), the fourth scrubber (20d) and the third scrubber (20c) may be arranged in the first direction (D1), and the first scrubber (20a) and the fourth scrubber (20d) may be arranged in the first direction (D1).

[0225] The first scrubber (20a) and the third scrubber (20c) can be spaced apart from each other in a diagonal direction, and the second scrubber (20b) and the fourth scrubber (20d) can be spaced apart from each other in a diagonal direction.

[0226] In some embodiments, the second_1 sub-space (215_1b) may extend in a third direction (D3). The third_1 sub-space (215_1c) may extend in a first direction (D1). The fourth_1 sub-space (215_1d) may extend in a third direction (D3). That is, the extending direction of the second_1 sub-space (215_1b) and the extending direction of the third_1 sub-space (215_1c) may intersect each other, and the extending directions of the third_1 sub-space (215_1c) and the fourth_1 sub-space (215_1d) may intersect each other.

[0227] By using a scrubbing device (20) according to some embodiments of the present invention, four scrubbers can be arranged in a 'ㄷ' shape or a checkerboard shape. Accordingly, a scrubbing device (20) with improved space efficiency can be provided.

[0228] Referring to FIG. 10, the scrubbing device (20) according to some embodiments may not include a second_1 sub-space (215_1b of FIG. 3). The second scrubbing space (215b) may include only a second_2 sub-space.

[0229] At this time, the gas passing through the first scrubber (20a) can be injected into the lower part of the second scrubber (20b). That is, the vertical level of the first gas outlet (26a) can be different from the vertical level of the second gas inlet (25b). Based on the bottom surface of the first chamber (210a), the height of the first gas outlet (26a) can be greater than the height of the second gas inlet (25b).

[0230] Since the second scrubbing space (215b) does not include the second_1 sub-space (215_1b), space efficiency can be improved.

[0231] Referring to FIG. 11, in a scrubbing device (20) according to some embodiments, a first solution storage tank (270a) and a second solution storage tank (270b) may be connected to each other via a tank connection pipe (290). Accordingly, the scrubbing solution (275a) in which the first impurity is dissolved and the scrubbing solution (275b) in which the second impurity is dissolved, stored in the first solution storage tank (270a), may be mixed with each other. Since the scrubbing solution (275a) in which the first impurity is dissolved and the scrubbing solution (275b) in which the second impurity is dissolved are mixed with each other, the concentration of the impurities in the solution may be controlled.

[0232] Referring to FIG. 12, the first scrubber (20a) and the second scrubber (20b) according to some embodiments may each include two scrubbing plates. That is, the first scrubber (20a) may include a first_1 scrubbing plate (230a) and a first_2 scrubbing plate (240a). The second scrubber (20b) may include a second_1 scrubbing plate (230b) and a second_2 scrubbing plate (240b).

[0233] At this time, the shape of the first scrubbing plate (230a) and the shape of the first scrubbing plate (240a) may be different from each other. Similarly, the shape of the second scrubbing plate (230b) and the shape of the second scrubbing plate (240b) may be different from each other. The first scrubbing plate (230a) may be substantially the same as the second scrubbing plate (230b), and the first scrubbing plate (240a) may be substantially the same as the second scrubbing plate (240b). Therefore, only the first scrubbing plate (230a) and the first scrubbing plate (240a) will be described below.

[0234] In some embodiments, the two ends of the first_1 scrubbing plate (230a) may be spaced apart from the first separating wall (220a) and the inner wall of the first scrubber (20a) facing the first separating wall (220a), respectively. Specifically, the first_1 scrubbing plate (230a) may not be in contact with and connected to both the first separating wall (220a) and the inner wall of the first scrubber (20a) facing the first separating wall (220a).

[0235] A pair of first-first scrubbing walls (235a) may be arranged at one end and the other end of the first-first scrubbing plate (230a). Some of the pair of first-first scrubbing walls (235a) may be interposed between the first-first scrubbing plate (230a) and the first separating wall (220a). Others of the pair of first-first scrubbing walls (235a) may be interposed between the first-first scrubbing plate (230a) and the inner wall of the first scrubber (20a) facing the first separating wall (220a).

[0236] The space between the first scrubbing wall (235a) and the first separation wall (220a) and the space between the first scrubbing wall (235a) and the inner wall of the first scrubber (20a) facing the first separation wall (220a) may be a space in which the first scrubbing solution (227a) flows downward (for example, in the second direction (D2)).

[0237] The two ends of the first_2 scrubbing plate (240a) may be connected to the first separating wall (220a) and the inner wall of the first scrubber (20a) facing the first separating wall (220a), respectively. The first_2 scrubbing plate (240a) may have a structure in which a central portion is open. That is, the first_2 scrubbing plate (240a) may include an opening, and the opening is formed in the central portion of the first_2 scrubbing plate (240a) and may extend in a third direction (D3). The opening may expose at least a portion of the upper surface of the first_1 scrubbing plate (230a). That is, the opening may overlap at least a portion of the upper surface of the first_1 scrubbing plate (230a) in the second direction (D2).

[0238] A pair of first and second scrubbing walls (245a) may be respectively positioned in the central portion of the first and second scrubbing plates (240a). A pair of first and second scrubbing walls (245a) may each be positioned in the opening.

[0239] A pair of first and second scrubbing walls (245a) may be spaced apart from each other in a first direction (D1). The space between the pair of first and second scrubbing walls (245a) may be a space in which the first and second scrubbing solution (227a) flows downward (e.g., in the second direction (D2)).

[0240] In some embodiments, the first_second scrubbing solution (227a) may be discharged to both ends of the first_second scrubbing plate (240a). For example, the first_second scrubbing solution (227a) may be discharged to an area adjacent to the first separating wall (220a) of the first_second scrubbing plate (240a) and an area adjacent to the inner wall of the first scrubber (20a) of the first_second scrubbing plate (240a), respectively.

[0241] The first-second scrubbing solution (227a) discharged to the upper surface of the first-second scrubbing plate (240a) can flow to the central portion of the first-second scrubbing plate (240a). The first-second scrubbing solution (227a) discharged to the upper surface of the first-second scrubbing plate (240a) can flow to the opening.

[0242] While the first-second scrubbing solution (227a) flows to the central portion of the first-second scrubbing plate (240a), impurities can be dissolved in the first-second scrubbing solution (227a). The first-second scrubbing solution (227a) can be discharged over the first-second scrubbing wall (245a) to the upper surface of the first-first scrubbing plate (230a). The first-second scrubbing solution (227a) discharged to the upper surface of the first-first scrubbing plate (230a) can flow to both ends of the first-first scrubbing plate (230a).

[0243] In Fig. 12, the first scrubber (20a) and the second scrubber (20b) are each illustrated as including two scrubbing plates, but the technical idea of ​​the present invention is not limited thereto. If the first scrubber (20a) includes three scrubbing plates, the shape of the first_3 scrubbing plate may be identical to the shape of the first_1 scrubbing plate (230a). The first_3 scrubbing plate may be placed on the first_2 scrubbing plate (240a).

[0244] If the first scrubber (20a) includes four scrubbing plates, the shape of the 1_3rd scrubbing plate may be the same as the shape of the 1_1st scrubbing plate (230a), and the shape of the 1_4th scrubbing plate may be the same as the shape of the 1_2nd scrubbing plate (240a). The 1_3rd scrubbing plate may be arranged on the 1_2nd scrubbing plate (240a), and the 1_4th scrubbing plate may be arranged on the 1_3rd scrubbing plate.

[0245]

[0246] Hereinafter, an operating method of a scrubbing device according to some embodiments of the present invention will be described with reference to FIGS. 13 and 14. For reference, FIG. 13 may be an exemplary flowchart for explaining an operating method of a scrubbing device according to some embodiments of the present invention.

[0247] FIG. 13 and FIG. 14 are drawings for explaining an operating method of a scrubbing device according to some embodiments of the present invention.

[0248] First, referring to FIG. 13, an operating method of a scrubbing device according to some embodiments of the present invention may include providing a gas containing impurities to a first scrubber (S100), allowing the gas to pass upwardly through a first scrubbing hole within the first scrubber to primarily scrub some of the impurities contained in the gas (S200), providing the gas from which some of the impurities have been removed to a second scrubber (S300), and allowing the gas to pass upwardly through a second scrubbing hole within the second scrubber to secondarily scrub some of the other impurities contained in the gas (S400).

[0249] Specifically, referring to FIGS. 1 and 14, a gas (G) containing impurities may be provided from a process chamber (10) to a first scrubber (20a). The gas (G) containing impurities may pass through a first pipe (11) and be introduced into the interior of the first scrubber (20a) through a first gas inlet (25a) (see drawing reference numeral 310).

[0250] A gas (G) containing impurities can be introduced into the first_1 sub-space (215_1a). For example, the gas (G) containing impurities can move to the lower part of the first_1 sub-space (215_1a) (see drawing symbol 310).

[0251] In some embodiments, the 1_1 scrubbing process may be performed in the 1_1 sub-space (215_1a).

[0252] Specifically, the first_1 scrubbing solution (225a) can be supplied to the first_1 sub-space (215_1a) through the first spray nozzle (221a) (see drawing reference numeral 410). The first_1 scrubbing solution (225a) can be water, but the technical idea of ​​the present invention is not limited thereto.

[0253] In FIG. 14, the first scrubbing solution (225a) is depicted as being sprayed vertically in the second direction (D2), but the technical idea of ​​the present invention is not limited thereto.

[0254] The first spray nozzle (221a) can supply a first scrubbing solution (225a) having small particles. As the gas (G) containing impurities moves to the lower part of the first sub-space (215_1a), the first impurities contained in the gas (G) can be dissolved in the first scrubbing solution (225a). The gas can be supplied to the first sub-space (215_2a) (see drawing reference numeral 310). The first scrubbing process can be performed in the first sub-space (215_2a).

[0255] While the above 1_2 scrubbing process is being performed, the 1st solution supply nozzle (223a) can supply the 1_2 scrubbing solution (227a) to the upper surface of the 1_3 scrubbing plate (250a). The initially supplied 1_2 scrubbing solution (227a) can flow downward through the 1_3 scrubbing hole (250H_a), the 1_2 scrubbing hole (240H_a), and the 1_1 scrubbing hole (230H_a). That is, in the initial state, the 1_2 scrubbing solution (227a) can flow downward through the scrubbing holes (250H_a, 240H_a, 230H_a).

[0256] While the above 1_2 scrubbing process is performed, the gas (G) can rise in the second direction (D2). The gas (G) can pass through the 1_1 scrubbing hole (230H_a) and rise in the second direction (D2).

[0257] Specifically, referring to FIG. 4, the gas (G) can pass upwardly through the first scrubbing hole (230H_a). The gas (G) can rise in the second direction (D2) to form bubbles (BBL) within the first scrubbing solution (227a). Impurities contained in the gas (G) can be dissolved in the first scrubbing solution (227a) at the contact surface where the bubbles (BBL) and the first scrubbing solution (227a) come into contact.

[0258] While the above 1_2 scrubbing process is performed, the 1_2 scrubbing solution (227a) does not flow downward through the scrubbing holes (250H_a, 240H_a, 230H_a) (see drawing symbol 420). This may be due to the pressure of the gas (G) rising through the scrubbing holes (250H_a, 240H_a, 230H_a).

[0259] While the above 1_2 scrubbing process is performed, the 1_2 scrubbing solution (227a) may flow from the upper surface of the 1_3 scrubbing plate (250a) toward the 1_3 scrubbing wall (255a), and may flow over the 1_3 scrubbing wall (255a) to the upper surface of the 1_2 scrubbing plate (240a) (see drawing symbol 420). In addition, the 1_2 scrubbing solution (227a) may flow from the upper surface of the 1_2 scrubbing plate (240a) toward the 1_2 scrubbing wall (245a), and may flow over the 1_2 scrubbing wall (245a) to the upper surface of the 1_1 scrubbing plate (230a) (see drawing symbol 420). Additionally, the 1_2 scrubbing solution (227a) can flow from the upper surface of the 1_1 scrubbing plate (230a) toward the 1_1 scrubbing wall (235a) and flow beyond the 1_1 scrubbing wall (235a) to the lower portion of the 1st chamber (210a) (see drawing symbol 420).

[0260] While the first-second scrubbing solution (227a) flows in the above direction, the gas (G) may pass through the scrubbing holes (250H_a, 240H_a, 230H_a) and rise in the second direction (D2). As the gas (G) passes through the scrubbing holes (250H_a, 240H_a, 230H_a), bubbles may be formed within the first-second scrubbing solution (227a).

[0261] Specifically, the gas (G) can pass upwardly through the first scrubbing hole (230H_a) (see drawing symbol 320). Subsequently, the gas (G) can pass upwardly through the first scrubbing hole (240H_a) (see drawing symbol 330). Subsequently, the gas (G) can pass upwardly through the first scrubbing hole (250H_a) (see drawing symbol 340).

[0262] As the gas (G) passes upward through the scrubbing holes (250H_a, 240H_a, 230H_a), impurities can be dissolved in the first and second scrubbing solutions (227a).

[0263] Next, the gas (G') from which some impurities have been removed can pass through the first demister (260a) and be discharged to the outside of the first chamber (210a) (see drawing symbol 350). The gas (G') discharged through the first gas outlet (26a) can be provided to the second chamber (210b) (see drawing symbol 350).

[0264] Impurities contained in the gas may be scrubbed secondarily within the second chamber (210b). For example, the gas provided to the second chamber (210b) may be provided to the second_1 sub-space (215_1b) and may flow from the upper part to the lower part of the second_1 sub-space (215_1b) (see drawing reference numeral 360). The second_1 scrubbing process may be performed in the second_1 sub-space (215_1b).

[0265] Specifically, the second_1 scrubbing solution (225b) can be supplied to the second_1 sub-space (215_1b) through the second spray nozzle (221b) (see drawing reference numeral 430). The first_1 scrubbing solution (225a) can be water, but the technical idea of ​​the present invention is not limited thereto.

[0266] Specifically, the second_1 scrubbing solution (225b) can be supplied to the second_1 sub-space (215_1b) through the second spray nozzle (221b) (see drawing reference numeral 430). The second_1 scrubbing solution (225b) can be water, but the technical idea of ​​the present invention is not limited thereto.

[0267] The above gas can be supplied to the 2_2 sub-space (215_2b) (see drawing symbol 360). The 2_2 scrubbing process can be performed in the 2_2 sub-space (215_2b).

[0268] While the above 2_2 scrubbing process is being performed, the 2nd solution supply nozzle (223b) can supply the 2_2 scrubbing solution (227b) to the upper surface of the 2_3 scrubbing plate (250b). The initially supplied 2_2 scrubbing solution (227b) can flow downward through the 2_3 scrubbing hole (250H_b), the 2_2 scrubbing hole (240H_b), and the 2_1 scrubbing hole (230H_b). That is, in the initial state, the 2_2 scrubbing solution (227b) can flow downward through the scrubbing holes (250H_b, 240H_b, 230H_b).

[0269] While the above 2_2 scrubbing process is performed, the gas (G) can rise in the second direction (D2). The gas (G) can rise in the second direction (D2) by passing through the 2_1 scrubbing hole (230H_b).

[0270] While the above 2_2 scrubbing process is performed, the 2_2 scrubbing solution (227b) does not flow downward through the scrubbing holes (250H_b, 240H_b, 230H_b) (see drawing symbol 440). This may be due to the pressure of the gas (G) rising through the scrubbing holes (250H_b, 240H_b, 230H_b).

[0271] While the above 2_2 scrubbing process is performed, the 2_2 scrubbing solution (227b) may flow from the upper surface of the 2_3 scrubbing plate (250b) toward the 2_3 scrubbing wall (255b), and may flow over the 2_3 scrubbing wall (255b) to the upper surface of the 2_2 scrubbing plate (240b) (see drawing symbol 440). In addition, the 2_2 scrubbing solution (227b) may flow from the upper surface of the 2_2 scrubbing plate (240b) toward the 2_2 scrubbing wall (245b), and may flow over the 2_2 scrubbing wall (245b) to the upper surface of the 2_1 scrubbing plate (230b) (see drawing symbol 440). Additionally, the second scrubbing solution (227b) can flow from the upper surface of the second scrubbing plate (230b) toward the second scrubbing wall (235b) and flow beyond the second scrubbing wall (235b) to the lower portion of the second chamber (210b) (see drawing symbol 440).

[0272] While the second scrubbing solution (227b) flows in the above direction, the gas (G) may pass through the scrubbing holes (250H_b, 240H_b, 230H_b) and rise in the second direction (D2). As the gas (G) passes through the scrubbing holes (250H_b, 240H_b, 230H_b), bubbles may be formed within the second scrubbing solution (227b).

[0273] Specifically, the gas (G) can pass upwardly through the second_1 scrubbing hole (230H_b) (see drawing symbol 370). Subsequently, the gas (G) can pass upwardly through the second_2 scrubbing hole (240H_b) (see drawing symbol 380). Subsequently, the gas (G) can pass upwardly through the second_3 scrubbing hole (250H_b) (see drawing symbol 390).

[0274] As the gas (G) passes upward through the scrubbing holes (250H_b, 240H_b, 230H_b), impurities can be dissolved in the second scrubbing solution (227a).

[0275] Next, the gas (G'') from which impurities have been removed can pass through the second demister (260b) and be discharged to the outside of the second chamber (210b) (see drawing symbol 400).

[0276] In this way, by using the scrubbing device (20) of the present invention, impurities contained in the gas can be scrubbed first using the first scrubber (20a) and secondly using the second scrubber (20b). Accordingly, scrubbing efficiency can be improved, and space efficiency can be improved because it includes multiple scrubbers.

[0277] Although embodiments of the present invention have been described with reference to the attached drawings, the present invention is not limited to the above embodiments, but can be manufactured in various different forms. Those skilled in the art to which the present invention pertains will understand that the present invention can be implemented in other specific forms without changing the technical spirit or essential characteristics of the present invention. Therefore, it should be understood that the embodiments described above are exemplary in all respects and not restrictive.

Claims

1. A first scrubber for scrubbing the gas in the first stage; and A second scrubber is connected to the first scrubber and performs secondary scrubbing of the gas passing through the first scrubber, The above first scrubber A first chamber defining a first scrubbing space for scrubbing some of the impurities contained in the gas; A first scrubbing plate disposed within the first chamber, at least a portion of which is fixed to an inner wall of the first chamber; a first solution supply nozzle for supplying a first scrubbing solution to the upper surface of the first scrubbing plate; and comprising a plurality of first scrubbing holes penetrating the first scrubbing plate, The above second scrubber A second chamber defining a second scrubbing space for scrubbing another portion of the impurities contained in the gas; A second scrubbing plate disposed within the second chamber, at least a portion of which is fixed to the inner wall of the second chamber; A second solution supply nozzle for supplying a second scrubbing solution to the upper surface of the second scrubbing plate; and A scrubbing device comprising a plurality of second scrubbing holes penetrating the second scrubbing plate.

2. In paragraph 1, Some of the impurities contained in the gas are dissolved in the first scrubbing solution by passing upward through the plurality of first scrubbing holes within the first chamber, A scrubbing device wherein another portion of the impurities contained in the gas are dissolved in the second scrubbing solution by passing upwardly through the plurality of second scrubbing holes within the second chamber.

3. In paragraph 1, It further includes a third scrubber connected to the second scrubber and performing a third scrubbing of the gas passing through the second scrubber. The above third scrubber A third chamber defining a third scrubbing space for scrubbing another portion of the impurities contained in the gas; A third scrubbing plate disposed within the third chamber, at least a portion of which is fixed to the inner wall of the third chamber; A third solution supply nozzle for supplying a third scrubbing solution to the upper surface of the third scrubbing plate; and comprising a plurality of third scrubbing holes penetrating the third scrubbing plate, A scrubbing device wherein the first scrubber, the second scrubber, and the third scrubber are arranged in one direction.

4. In paragraph 3, It further includes a fourth scrubber connected to the third scrubber and performing a fourth scrubbing of the gas passing through the third scrubber. A scrubbing device wherein the first to fourth scrubbers are arranged in one direction or in an 'L' shape.

5. In paragraph 1, It further includes a third scrubber connected to the second scrubber and performing a third scrubbing of the gas passing through the second scrubber. The above third scrubber A third chamber defining a third scrubbing space for scrubbing another portion of the impurities contained in the gas; A third scrubbing plate disposed within the third chamber, at least a portion of which is fixed to the inner wall of the third chamber; A third solution supply nozzle for supplying a third scrubbing solution to the upper surface of the third scrubbing plate; and comprising a plurality of third scrubbing holes penetrating the third scrubbing plate, A scrubbing device wherein the first scrubber, the second scrubber, and the third scrubber are arranged in an ‘L’ shape.

6. In paragraph 1, The first scrubber includes a first gas inlet through which the gas is introduced into the first chamber, and a first gas outlet through which the gas is discharged outside the first chamber. A scrubbing device, wherein the first gas inlet is formed on one side wall of the first chamber, and the gas outlet is formed on the other side wall facing the one side wall.

7. In paragraph 6, A scrubbing device wherein the first gas inlet and the first gas outlet are formed at the same vertical level.

8. In paragraph 6, The second scrubber includes a second gas inlet through which the gas is injected into the second chamber, A scrubbing device wherein the first gas outlet and the second gas inlet are connected to each other.

9. In paragraph 8, A scrubbing device wherein the vertical level of the first gas outlet is higher than the vertical level of the second gas inlet.

10. In paragraph 1, The first scrubber includes a first gas inlet through which the gas is introduced into the first chamber, and a first gas outlet through which the gas is discharged outside the first chamber. A scrubbing device, wherein the first gas inlet is formed on one side wall of the first chamber, and the first gas outlet is formed on the other side wall intersecting the one side wall.

11. In paragraph 1, The first scrubber includes a first solution storage tank in which the first scrubbing solution in which the first impurity among the impurities is dissolved is stored, A scrubbing device, wherein the second scrubber includes a second solution storage tank in which the second scrubbing solution in which the second impurity is dissolved is stored.

12. In paragraph 11, A scrubbing device, wherein the concentration of the first impurity in the solution stored in the first solution storage tank is higher than the concentration of the second impurity in the solution stored in the second solution storage tank.

Images