Light-emitting diode and light-emitting module having same

Abstract

Disclosed are a light-emitting diode and a light-emitting module having same. A light-emitting diode according to an embodiment disclosed herein comprises: a first conductive semiconductor region including a first dopant; a light-emitting region including a barrier layer and a well layer; a second conductive semiconductor region including a second dopant; and an approach region disposed between the first conductive semiconductor region and the second conductive semiconductor region, wherein the profile of the second dopant extends from the second conductive semiconductor region to the approach region, and at least a portion of the approach region overlaps the light-emitting region.

Description

Light-emitting diode and light-emitting module having the same

[0001] The present disclosure relates to a light emitting diode and a light emitting module.

[0002] Light-emitting diodes (LEDs) are used as light sources in displays, traffic lights, lighting, and optical communication devices. In particular, nitride LEDs can emit light in a variety of colors, from ultraviolet to red, by adjusting the composition ratio of Al, Ga, and In. Nitride-based LEDs inject electrons and holes into a quantum well-structured emission region, where they combine to produce light.

[0003] In order to improve the luminous efficiency of a light-emitting diode, the injection efficiency of electrons and holes must be improved, and in particular, the injection efficiency of holes must be improved.

[0004] Embodiments of the present disclosure provide a light emitting diode having improved hole injection efficiency into a light emitting region.

[0005] A light emitting diode according to one embodiment of the present disclosure comprises: a first conductive semiconductor region including a first dopant; a light emitting region including a barrier layer and a well layer; a second conductive semiconductor region including a second dopant; and an approach region disposed between the first conductive semiconductor region and the second conductive semiconductor region, wherein a profile of the second dopant extends from the second conductive semiconductor region to the approach region, and at least a portion of the approach region overlaps the light emitting region.

[0006] In one embodiment, the approach region may include a first region having a relatively gentle slope and a second region having a steeper slope than the first region.

[0007] In one embodiment, the absolute value of the peak-to-peak slope in the first region may be less than the absolute value of the peak-to-peak slope in the second region.

[0008] Additionally, the absolute value of the valley-valley slope in the first region may be smaller than the absolute value of the valley-valley slope in the second region.

[0009] The second dopant profile may have peaks near the surface of the second conductive semiconductor region and near the light-emitting region within the second conductive semiconductor region, and further may have regions in which the concentration of the second dopant increases with increasing depth between the peaks.

[0010] The above approach region includes a first region having a relatively gentle slope and a second region having a steeper slope than the first region, and the absolute value of the slope of the region in which the concentration of the second dopant increases between the peaks may be greater than the absolute value of the slope of the first region.

[0011] In the first region, the slope of the second dopant profile may be different from the slope of the first dopant profile.

[0012] In the second region, the slope of the second dopant profile may be different from the slope of the first dopant profile.

[0013] The first challenge type semiconductor region includes a region doped with a relatively high concentration of a first dopant and a low concentration doping region doped with a relatively low concentration, wherein the Si doping concentration of the high concentration doping region may be higher than the concentration of the second dopant of the approach region.

[0014] The above approach region includes a first region having a relatively gentle slope and a second region having a steeper slope than the first region, and the maximum concentration of the first dopant profile in the low-concentration doping region may be higher than the second dopant concentrations in the first region and the second region.

[0015] In one embodiment, a light emitting diode further comprising a superlattice region disposed between the first conductive semiconductor region and the active region, wherein the deepest position (P1) of the second region is located between the first well layer of the superlattice region and the first well layer of the light emitting region.

[0016] The shallowest position (P2) of the above first region may be located between the first well layer and the last well layer of the above light-emitting region.

[0017] The above superlattice region further includes a first superlattice, a second superlattice, and an intermediate layer disposed between the first superlattice and the second superlattice, and the lowest position of In in the intermediate layer may be deeper than the deepest position (P1) of the second region.

[0018] The absolute value of the slope of the profile of the second dopant in the first region may be greater than the absolute value of the slope of the Al profile.

[0019] In the second region, the absolute value of the slope of the second dopant profile may be greater than the absolute value of the slope of the Al profile.

[0020] The starting position of the base region of the Al profile may be deeper than the starting position of the base region of the second dopant profile, and the absolute value of the slope of the Al profile near the starting position of the base region of the Al profile may be greater than the absolute value of the slope of the second dopant profile near the starting position of the base region of the second dopant profile.

[0021] The light emitting diode may include a plurality of approach regions, and the plurality of approach regions may have different widths or heights.

[0022] The above plurality of approach areas may have different positions and heights at points where the first area and the second area intersect.

[0023] A light emitting module according to one embodiment of the present disclosure includes at least two light emitting diodes as described above.

[0024] The width or height of the approach areas of the above two light-emitting diodes may be different from each other.

[0025] FIG. 1 is a schematic cross-sectional view illustrating a nitride-based light-emitting diode according to one embodiment of the present disclosure.

[0026] FIG. 2 shows a SIMS profile of a nitride-based light-emitting diode according to one embodiment of the present disclosure.

[0027] Figure 3 shows the profiles of Mg and Si among the SIMS profiles of Figure 2.

[0028] Figure 4 shows the profiles of Mg and In among the SIMS profiles of Figure 2.

[0029] Figure 5 shows the profiles of Mg and Al among the SIMS profiles of Figure 2.

[0030] FIG. 6 is a schematic plan view illustrating a light-emitting module according to one embodiment of the present disclosure.

[0031] In the following description, for purposes of explanation, numerous specific details are set forth to provide a thorough understanding of various embodiments or implementations of the present disclosure. As used herein, the terms "embodiment" and "implementation" are interchangeable to refer to non-limiting examples of devices or methods that utilize one or more of the inventive concepts disclosed herein. However, it will be apparent that various embodiments may be practiced without utilizing these specific details or using one or more equivalent arrangements. In other instances, well-known structures and devices are shown in block diagram form to avoid unnecessarily obscuring the various embodiments. Furthermore, while the various embodiments may vary from one another, they are not necessarily exclusive. For example, specific features, configurations, and characteristics of an embodiment may be utilized or implemented in other embodiments without departing from the scope of the inventive concepts.

[0032] Unless otherwise specified, the illustrated embodiments should be understood to provide exemplary features of varying details of some ways in which the concepts of the present invention may be practically implemented. Therefore, unless otherwise specified, the features, components, modules, layers, membranes, panels, regions, and / or aspects (hereinafter, individually or collectively referred to as "elements") of the various embodiments may be differently combined, separated, interchanged, and / or rearranged without departing from the scope of the concepts of the present invention.

[0033] The use of cross-hatching and / or shading in the accompanying drawings is generally provided to clarify boundaries between adjacent elements. As such, the presence or absence of cross-hatching or shading, unless expressly stated, does not imply or indicate any preference or requirement for any particular material, material properties, dimensions, proportions, commonality between the illustrated elements, and / or any other features, properties, or characteristics of the elements. Furthermore, in the accompanying drawings, the dimensions and relative sizes of elements may be exaggerated for clarity and / or illustrative purposes. When embodiments are implemented differently, certain process sequences may be performed differently from the illustrated sequence. For example, two consecutively illustrated processes may be performed substantially simultaneously or in a reverse order from the illustrated sequence. Furthermore, like reference numerals designate like elements.

[0034] When an element, such as a layer, is referred to as being "on," "connected to," or "joined to" another element or layer, the element may be directly on, connected to, or joined to the other element or layer, or there may be intervening elements or layers present. However, when an element or layer is referred to as being "directly on," "directly connected to," or "directly joined to" another element or layer, there are no intervening elements or layers present. For this purpose, the term "connected" may refer to physical, electrical, and / or fluidic connections, with or without intervening elements. Furthermore, the DR1-axis, DR2-axis, and DR3-axis are not limited to the three axes of a Cartesian coordinate system, such as the x, y, and z-axes, and may be interpreted in a broader sense. For example, the DR1-axis, DR2-axis, and DR3-axis may be perpendicular to one another, or may represent different directions that are not perpendicular to one another. For purposes of this disclosure, “one or more of X, Y or Z” and “one or more selected from the group consisting of X, Y or Z” may be interpreted as only X, only Y, only Z or any combination of two or more of X, Y and Z, such as, for example, XYZ, XYY, YZ and ZZ. The term “and / or” as used herein includes any and all combinations of one or more of the associated listed items.

[0035] Although the terms "first," "second," and the like may be used herein to describe various types of elements, these elements should not be limited by these terms. These terms are used to distinguish one element from another. Therefore, the first element discussed below may be referred to as the second element without departing from the teachings of the present disclosure.

[0036] Spatially relative terms such as "beneath," "beneath," "directly beneath," "lower," "above," "upper," "above," "higher than," "side" (as in, for example, a "side wall"), and the like may be used for descriptive purposes and thereby to describe the relationship of one element to other element(s) as depicted in the drawings. Spatially relative terms are intended to encompass different orientations of the device in use, operation, and / or manufacture in addition to the orientations depicted in the drawings. For example, if the device in the drawings were turned over, an element described as "beneath" or "beneath" another element or feature would then be oriented "above" the other element or feature. Therefore, the exemplary term "beneath" can encompass both orientations above and below. Furthermore, the device can be oriented differently (e.g., rotated 90° or oriented in other orientations), and thus the spatially relative descriptors used herein can also be interpreted accordingly.

[0037] The terminology used herein is for the purpose of describing particular embodiments and is not limiting. The singular forms "a," "an," and "the" as used herein also include the plural forms unless the context clearly dictates otherwise. Furthermore, the terms "comprises," "comprising," "includes," and / or "comprising" as used herein specify the presence of stated features, integers, steps, operations, elements, components, and / or groups thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof. Furthermore, the terms "substantially," "about," and other similar terms as used herein are used as terms of approximation rather than degrees, and as such, are used to describe inherent deviations from measured, calculated, and / or provided values ​​that would be recognized by one of ordinary skill in the art.

[0038] Various embodiments are described below with reference to cross-sectional and / or exploded illustrations, which are schematic illustrations of idealized embodiments and / or intermediate structures. As such, variations from the shapes of the illustrated drawings may be expected, for example, as a result of manufacturing techniques and / or tolerances. Therefore, the embodiments disclosed herein should not necessarily be construed as limited to the shapes of specific illustrated regions, but should be construed to include, for example, deviations in shape resulting from manufacturing. In this way, the regions depicted in the drawings may be schematic in nature, and the shapes of these regions may not reflect the actual shapes of regions of the device, and as such, are not necessarily intended to have a limiting meaning.

[0039] As is conventional in the art, some embodiments may be illustrated and described in the accompanying drawings in terms of functional blocks, units, and / or modules. Those skilled in the art will appreciate that these blocks, units, and / or modules are physically implemented by electronic (or optical) circuits such as logic circuits, discrete components, microprocessors, wiring circuits, memory elements, and wiring connections formed using semiconductor-based or other manufacturing techniques. When the blocks, units, and / or modules are implemented by microprocessors or other similar hardware, they may be programmed and controlled using software (e.g., microcode) to perform the various functions discussed herein, and optionally may be driven by firmware and / or software. Furthermore, each block, unit, and / or module may be implemented by dedicated hardware, or by a combination of dedicated hardware for performing some functions and processors (e.g., one or more programmed processors and associated circuitry) for performing other functions. Additionally, the blocks, units, and / or modules of some embodiments may be physically separated into two or more interacting and individual blocks, units, and / or modules without departing from the scope of the present invention. Additionally, the blocks, units, and / or modules of some embodiments may be physically combined into more complex blocks, units, and / or modules without departing from the scope of the present invention.

[0040] Unless otherwise defined, all terms (including technical or scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure pertains. Terms defined in commonly used dictionaries, such as terms defined in commonly used dictionaries, should be interpreted to have a meaning consistent with their meaning in the context of the relevant technology, and should not be interpreted in an idealistic or overly formal sense unless explicitly defined herein.

[0041] FIG. 1 is a schematic cross-sectional view illustrating a light emitting diode (100) according to one embodiment of the present disclosure.

[0042] Referring to FIG. 1, a light-emitting diode (100) includes a substrate (21), a first conductive semiconductor region (23), a light-emitting region (25), and a second conductive semiconductor region (27).

[0043] The substrate (21) may be a growth substrate for growing a gallium nitride-based semiconductor layer, such as a sapphire substrate, a silicon substrate, a SiC substrate, a spinel substrate, a Ga2O3 substrate, etc. In one embodiment, the substrate (21) may be a patterned sapphire substrate. The substrate (21) may also be removed from the light emitting diode (100).

[0044] The first conductive semiconductor region (23) is a region for injecting electrons into the light-emitting region (25) and includes a first conductive contact layer. The first conductive semiconductor region (23) may have a multilayer structure and may include, for example, a buffer layer, an undoped layer, a first conductive contact layer, a superlattice layer, etc.

[0045] The light-emitting region (25) may have a multi-quantum well structure. The light-emitting region (25) may include a plurality of barrier layers and well layers, and light is generated by the combination of electrons and holes in the well layers. The well layers may include, for example, InGaN or InAlGaN, and the barrier layers may include GaN, AlGaN, or InAlGaN.

[0046] The second conductive semiconductor region (27) is a region for injecting holes into the light-emitting region (25) and may include an electron blocking layer and a second conductive contact layer. For example, the electron blocking layer may include AlGaN, and the second conductive contact layer may include GaN or InAlGaN.

[0047] The first conductive semiconductor region (23) includes a first dopant for electron generation and includes an n-type impurity such as Si. In addition, the second conductive semiconductor region (27) includes a second dopant for hole generation and includes a p-type impurity such as Mg. In embodiments of the present disclosure, the second dopant profile includes an approach region (AR) that at least partially overlaps the light-emitting region (25), thereby reducing the reaching distance from the region where holes exist to the light-emitting region (25), thereby facilitating the injection of holes into the light-emitting region (25), thereby improving light-emitting efficiency.

[0048] FIG. 2 shows a profile showing the content of a material of a nitride-based light-emitting diode according to an embodiment of the present disclosure using SIMS, FIG. 3 shows profiles of Mg and Si among the content profiles of FIG. 2, FIG. 4 shows profiles of Mg and In among the profiles of FIG. 2, and FIG. 5 shows profiles of Mg and Al among the profiles of FIG. 2. The x-axis of the profile represents the depth from the surface to the inside of the second conductive semiconductor region (27), and the y-axis represents the number of atoms per unit volume (cm3), i.e., the concentration. It should be noted that the y-axis is displayed in a logarithmic scale, and the slope described below means the slope for the logarithmic value. That is, the slopes of two points (x1, y1) and (x2, y2) in the profile are expressed as (logy2 - logy1) / (x2-x1).

[0049] First, referring to FIGS. 2 and 3, the profiles represent depth profiles of Al, In, Mg, and Si from the surface of the second conductive semiconductor region (27). The beam size used for measurement is 90 um × 90 um.

[0050] The first conductive semiconductor region (23) includes a first dopant, and the first dopant may be Si. The first conductive semiconductor region (23) includes a region doped with a high concentration of the first dopant and a region doped with a low concentration of the first dopant. Additionally, a single or at least two types of superlattice regions may be included between the first conductive semiconductor region (23) and the light-emitting region (25). When at least two types of superlattice regions are included, the superlattice region (second superlattice) close to the light-emitting region (25) may be composed of thinner layers or include more layers than the superlattice region (first superlattice) further away from the light-emitting region (25). Therefore, defects propagating to the light-emitting region (25) can be effectively removed. The first superlattice may include, for example, InGaN / GaN, and the second superlattice may include InGaN / GaN, InAlGaN / GaN, or InAlGaN / InAlGaN.

[0051] Meanwhile, the second conductive semiconductor region (27) may include an electron blocking layer and a second conductive contact layer, and the electron blocking layer may include AlGaN or InAlGaN. The second conductive semiconductor region (27) may include a second dopant, and the second dopant may include Mg. The electron blocking layer may be formed as a single layer, but may also be formed as a multilayer structure with different Al compositions. The second conductive contact layer may include a delta doping layer doped with a p-type impurity at a high concentration.

[0052] (Second dopant profile)

[0053] The second dopant exhibits a relatively high doping concentration at the surface within the second conductive semiconductor region (27), and exhibits the highest doping concentration at a location adjacent to the light-emitting region (25). As illustrated in FIG. 2, the second dopant profile may have at least two peaks within a region overlapping the second conductive semiconductor region (27). As can be seen in FIG. 3, the at least two peaks include a first peak (K1) near the surface and a second peak (K2) near the light-emitting region (25). As the depth increases in the region between the first peak (K1) and the second peak (K2), a section in which the doping concentration of the second dopant increases may be formed. Therefore, the film quality of the region near the upper surface may be improved, which may reduce the driving voltage.

[0054] Meanwhile, the second dopant profile of the light emitting diode (100) may include an approach region (AR) disposed between the first conductive semiconductor region (23) and the second conductive semiconductor region (27). The approach region (AR) may be disposed between the second peak of the second dopant and the first conductive semiconductor region (23). A starting point (P0) of the approach region (AR) may be an intersection of the second dopant profile and the indium profile between the indium profile peak of the well layer of the light emitting region (25) disposed closest to the second conductive semiconductor region (27) and the second peak of the second dopant. The approach region (AR) may extend from the starting point toward the first conductive semiconductor region (23), and may be reduced such that the concentration of the second dopant becomes 5E16 / cm3 or less. Therefore, the point where the concentration of the second dopant becomes 5E16 / cm3 may be the first point (P1) of the approach region (AR). The first point (P1) of the second dopant profile may be the starting point of the base region. The starting point of the base region of the second dopant profile means the region where the lowest value that can be expressed in the second dopant profile appears, and when it is difficult to clearly define the base region, the inside from the position where the second dopant concentration first shows a value of 5E16 / cm3 may be defined as the base region. The depth of the approach region (AR) formed along the x-axis may be greater than the depth of the active region (25). Therefore, the approach distance of the second dopant to the active region (25) may be shortened, so that the luminous efficiency may increase.

[0055] The approach region (AR) may include a first region (R1) extending from a third point (P3) at the same depth as the indium peak of the first well layer of the light-emitting region (23) in a direction toward the second conductive semiconductor region (27) to a second point (P2) where the second dopant concentration is 1E18 / cm3. The first region (R1) may continue from the second peak and the second dopant concentration may gradually decrease as the depth increases. In addition, the approach region (AR) may include a second region (R2) extending from the first region (R1) to the first conductive semiconductor region (23) and where the second dopant concentration relatively rapidly decreases. The second region (R2) may be disposed between the first region (R1) and the first conductive semiconductor region (23). As the depth decreases from the first region (R1), the second dopant concentration increases and is connected to the second peak. At least a portion of the approach region (AR) overlaps with the emission region (25), and the first region (R1) can overlap with the emission region (25). Therefore, it is possible to prevent the injection amount of the second dopant from varying depending on the position of the well layer of the emission region (25). Furthermore, the entire second region (R2) can overlap with the emission region (25). Meanwhile, a portion of the second region (R2) can overlap with the emission region (25), and the remaining portion can overlap with the superlattice region. The slope of the first region (R1) is gentler than the slope of the second region (R2). The first region (R1) can have a profile having a second dopant concentration of 1E17 / cm3 to 1E18 / cm3. The second region (R2) can have a profile having a second dopant concentration of 1E17 / cm3 to 5E16 / cm3. In this specification, when a large number of peaks and valleys are connected, the slope refers to the slope of the line connecting the first and last peaks or the slope of the line connecting the first and last valleys. In the approach region (AR), the peak-to-peak slope may be gentler than the valley-to-valley slope.

[0056] Furthermore, the absolute value of the slope of the first region (R1) may be smaller than the absolute value of the slope of the section in which the concentration of the second dopant increases in the section between the first peak and the second peak in the second conductive semiconductor region (27). The absolute value of the slope of the second region (R2) may be larger than the absolute value of the slope of the section in which the concentration of the second dopant increases in the section between the first peak and the second peak in the second conductive semiconductor region (27). Therefore, the second dopant can be prevented from diffusing into the first conductive semiconductor region (23). In addition, the absolute value of the overall slope of the approach region (AR) may be larger than the absolute value of the slope of the section in which the concentration of the second dopant increases in the section between the first peak and the second peak in the second conductive semiconductor region (27). The slope of the first region (R1) has a negative value, and the slope of the section in which the concentration of the second dopant increases in the section between the first peak and the second peak has a positive value. The slope can be the rate of change in concentration with thickness in that section.

[0057] (Comparison of the second dopant profile and the first dopant profile)

[0058] As illustrated in FIG. 3, the first conductive semiconductor region (23) includes a high-concentration doping region (23a) and a low-concentration doping region (23b). Here, high-concentration and low-concentration are used to relatively represent the high-concentration doping region (23a) and the low-concentration doping region (23b), and the high-concentration doping region (23a) has a relatively higher first dopant concentration than the low-concentration doping region (23b). The first dopant doping concentration of the high-concentration doping region (23a) may be lower than the first peak or the second peak of the second dopant profile in the second conductive semiconductor region (27), and may be higher than the region of increasing doping concentration of the first dopant between the first peak and the second peak.

[0059] Meanwhile, the maximum doping concentration of the first dopant in the low-concentration doping region (23b) may be higher than the average concentration of the second dopant in the approach region (AR). Here, the average concentration may be considered as a value obtained by dividing the sum of the highest and lowest points in the region by 2. In one embodiment, the maximum doping concentration of the first dopant in the low-concentration doping region (23b) may be higher than the maximum doping concentration of the second dopant in the approach region (AR). Therefore, the luminous efficiency can be increased by balancing the speeds of the first and second dopants entering the luminous region (25).

[0060] Meanwhile, the concentration profile of the first dopant in the approach region (AR) of the second dopant may have a different slope from the concentration profile of the approach region (AR) of the second dopant. For example, the slope of the concentration profile of the second dopant in the first region (R1) may be different from the slope of the concentration profile of the first dopant, and the slope of the concentration profile of the second dopant in the second region (R2) may be different from the slope of the concentration profile of the first dopant. The concentration profile of the first dopant in the approach region (AR) of the second dopant may intersect the concentration profile of the approach region (AR) of the second dopant. As illustrated in FIG. 3, the doping concentration profile of the second dopant in the first region (R1) may be steeper than the doping concentration profile of the first dopant, and the doping concentration profile of the second dopant in the second region (R2) may be gentler than the doping concentration profile of the first dopant. The average concentration of the second dopant in the approach region (AR) may be higher than the average concentration of the first dopant in the approach region (AR). Here, the average concentration can be viewed as the sum of the highest and lowest points in the region divided by 2. The difference between the highest and lowest concentrations of the second dopant in the approach region (AR) may be greater than the difference between the highest and lowest concentrations of the first dopant in the approach region (AR). Therefore, by increasing the difference in the concentration of the second dopant, the diffusion speed of the second dopant can be increased.

[0061] (Comparison of the second dopant profile and the In profile)

[0062] As illustrated in Fig. 4, the In profile shows the luminescent region (25) and the superlattice region. Additionally, an InGaN or InAlGaN layer may be disposed on or around the electron blocking layer within the second conductive semiconductor region (27). Accordingly, an In profile may be included within the second conductive semiconductor region (27).

[0063] Meanwhile, the first point (P1) of the approach region (AR) may be arranged outside the light-emitting region (25). Furthermore, the first point (P1) of the approach region (AR) may be located between the first conductive semiconductor region (23) and the first well layer of the light-emitting region (25). The starting point (P0) of the approach region (AR) may be the intersection of the second dopant profile and the indium profile between the indium profile peak of the well layer of the light-emitting region (25) that is arranged closest to the second conductive semiconductor region (27) and the second peak of the second dopant. Meanwhile, the second point (P2) of the first region (R1) of the approach region (AR) may be located between the first well layer and the last well layer of the light-emitting region (25). Furthermore, the second point (P2) may be arranged closer to the second conductive semiconductor region (27) with respect to the center of the light-emitting region (25). Therefore, the second dopant can be prevented from moving into the first conductive semiconductor region (23).

[0064] In another embodiment, the superlattice region may include a first superlattice region and a second superlattice region, and an intermediate layer is disposed between the first and second superlattice regions, and a lowest In concentration of the intermediate layer is lower than the lowest In concentrations of the first and second superlattices. The lowest In concentration of the intermediate layer may be located closer to the second conductive semiconductor region (23) than to the first point (P1), but is not limited thereto, and may be located between the first point (P1) and the second point (P2).

[0065] (Comparison of the second dopant profile and the Al profile)

[0066] As illustrated in FIG. 5, the profile of the second dopant within the approach region (AR) includes a first region (R1) that is positioned relatively closer to the second conductive semiconductor region (27) and a second region (R2) that is positioned relatively closer to the first conductive semiconductor region (23), and similarly, the profile of Al also includes regions with different slopes within the approach region.

[0067] In the first region (R1), the slope of the second dopant profile, for example, the slope of the extension line (L1') connecting the second point (P2) and the third point (P3), is steeper than the slope of the first extension line (L1) connecting the first Al peak and the last Al peak of the Al profile, and in the second region, the slope of the profile of the second dopant, for example, the slope of the extension line (L2') connecting the third point (P3) and the first point (P1), is steeper than the slope of the second extension line (L2) extending the first Al peak and the last Al peak of the Al profile. Therefore, the difference in the second dopant content of the layers including Al allows the second dopant to diffuse beyond the Al peaks. Meanwhile, the fourth point (P4) where the Al profile intersects the 5E16 / cm3 point may be deeper than the first point (P1) where the second dopant concentration of the second dopant profile becomes 5E16 / cm3. That is, the fourth point (P4) of the Al profile is arranged closer to the first conductive semiconductor region (23) than the first point (P1) of the second dopant profile. In other words, the first point (P1) of the second dopant profile is arranged closer to the second conductive semiconductor region (27) than the fourth point (P4) of the Al profile. Therefore, the second dopant can be prevented from diffusing into the first conductive semiconductor region (23).

[0068] According to embodiments of the present disclosure, the luminous efficiency can be improved by arranging the approach region (AR) at a depth overlapping the active region (25).

[0069] A light-emitting diode according to another embodiment of the present disclosure may include multiple approach regions, and the multiple approach regions may have different shapes. For example, the points (P0, P1, P2, P3, P4) described above may appear at different depths, and the widths and heights of the approach regions may be different. Alternatively, the widths and heights of the first and second regions of the approach region may be different. Accordingly, the depths and / or concentrations at the locations where the first and second regions meet may be different.

[0070] FIG. 6 is a schematic plan view illustrating a light-emitting module according to one embodiment of the present disclosure.

[0071] Referring to FIG. 6, a light-emitting module (1000) according to the present embodiment may include a plurality of packages (200) arranged on a circuit board (300), and each package (200) may include a light-emitting diode (100) described above.

[0072] The number of packages arranged on the circuit board (300) is not particularly limited. The shape of the package (200) is not particularly limited and may include a chip-scale package. The light-emitting diode (100) can be driven by being electrically connected to the circuit board (300).

[0073] In the present embodiment, light emitting diodes within packages (200) arranged at different locations have similar layer structures and emit light with peak wavelength deviations of less than 10 nm. However, the material content profiles for at least two different light emitting diodes (100) are different. For example, the points (P1, P2) described above may appear at different depths, or the width and height of the approach area (AR) included in each of at least two different light emitting diodes (100) may be different.

[0074] While specific embodiments and aspects of the present disclosure have been illustrated and described, various changes and modifications may be made without departing from the spirit and scope of the present disclosure. Furthermore, while various aspects have been described herein, these aspects need not be used in combination. Accordingly, the following claims are intended to encompass all modifications and variations within the scope of the present disclosure.

Claims

1. In light-emitting diodes, A first conductive semiconductor region comprising a first dopant; A luminescent region including a barrier layer and a well layer; a second conductive semiconductor region comprising a second dopant; and It includes an approach region arranged between the first conductive semiconductor region and the second conductive semiconductor region, The profile of the second dopant extends from the second conductive semiconductor region to the approach region, A light emitting diode wherein at least a portion of the above approach area overlaps the above light emitting area.

2. A light emitting diode according to claim 1, wherein the approach region includes a first region having a relatively gentle slope and a second region having a steeper slope than the first region.

3. In claim 2, a light emitting diode in which the absolute value of the peak-to-peak slope in the first region is smaller than the absolute value of the peak-to-peak slope in the second region.

4. In claim 2, a light emitting diode in which the absolute value of the valley-valley slope in the first region is smaller than the absolute value of the valley-valley slope in the second region.

5. In claim 1, the profile of the second dopant has peaks near the surface of the second conductive semiconductor region and near the light-emitting region within the second conductive semiconductor region, and further, a light-emitting diode having a region in which the concentration of the second dopant increases as the depth increases between the peaks.

6. In claim 5, the approach region includes a first region having a relatively gentle slope and a second region having a steeper slope than the first region, and the absolute value of the slope of the region in which the concentration of the second dopant increases between the peaks is greater than the absolute value of the slope of the first region.

7. In claim 2, a light emitting diode in which the slope of the second dopant profile in the first region is different from the slope of the first dopant profile.

8. In claim 2, a light emitting diode in which the slope of the second dopant profile in the second region is different from the slope of the first dopant profile.

9. A light emitting diode according to claim 1, wherein the first conductive semiconductor region includes a region doped with a relatively high concentration of the first dopant and a low-concentration doping region doped with a relatively low concentration, wherein the concentration of the first dopant in the high-concentration doping region is higher than the concentration of the second dopant in the approach region.

10. A light emitting diode according to claim 9, wherein the approach region includes a first region having a relatively gentle slope and a second region having a steeper slope than the first region, and the maximum concentration of the first dopant profile in the low-concentration doping region is higher than the second dopant concentrations in the first region and the second region.

11. A light emitting diode according to claim 2, further comprising a superlattice region disposed between the first conductive semiconductor region and the active region, wherein the deepest position (P1) of the second region is located between the first well layer of the superlattice region and the first well layer of the light emitting region.

12. A light emitting diode according to claim 11, wherein the shallowest position (P2) of the first region is located between the first well layer and the last well layer of the light emitting region.

13. In claim 11, the superlattice region further includes a first superlattice, a second superlattice, and an intermediate layer disposed between the first superlattice and the second superlattice, and a light emitting diode in which the lowest position of the In profile of the intermediate layer is deeper than the deepest position (P1) of the second region.

14. A light emitting diode according to claim 2, wherein the absolute value of the slope of the profile of the second dopant in the first region is greater than the absolute value of the slope of the Al profile.

15. A light emitting diode according to claim 2, wherein the absolute value of the slope of the second dopant profile in the second region is greater than the absolute value of the slope of the Al profile.

16. A light emitting diode according to claim 2, wherein the starting position of the base region of the Al profile is deeper than the starting position of the base region of the second dopant profile, and the absolute value of the slope of the Al profile near the starting position of the base region of the Al profile is greater than the absolute value of the slope of the second dopant profile near the starting position of the base region of the second dopant profile.

17. A light emitting diode according to claim 2, comprising a plurality of approach areas, wherein the plurality of approach areas have different widths or heights.

18. In claim 17, the plurality of approach areas are light emitting diodes in which the positions and heights of the points where the first area and the second area intersect are different from each other.

19. A light-emitting module comprising at least two light-emitting diodes of claim 1.

20. A light emitting module according to claim 19, wherein the width or height of the approach areas of the two light emitting diodes are different from each other.

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