Drive apparatus for radio frequency power source, and radio frequency power source and semiconductor processing device

Abstract

Provided in the present disclosure are a drive apparatus for a radio frequency power source, and a radio frequency power source and a semiconductor processing device. The drive apparatus comprises: a radio frequency drive signal input module, which outputs a radio frequency drive signal; a gate drive amplification module, which is configured to perform primary amplification on the radio frequency drive signal; a controllable frequency selection network module, which is configured to adjust the numerical value of an internal element thereof to correspond to a target frequency, so as to gate a radio frequency drive signal that matches the target frequency; an impedance transformation module, an input end of which is connected to an output end of the controllable frequency selection network module; and a secondary drive amplification module, an input end of which is connected to an output end of the impedance transformation module, wherein secondary amplification is performed on the radio frequency drive signal which has been subjected to primary amplification, so as to output a radio frequency power, and the impedance transformation module performs impedance matching on the gate drive amplification module and the secondary drive amplification module. In the present embodiment, a radio frequency drive signal of a specified frequency is gated by means of the controllable frequency selection network module, such that the drive apparatus multiplexes radio frequency power sources of different main frequencies.

Description

A driving device of a radio frequency power supply, the radio frequency power supply and a semiconductor process equipment TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor process equipment, and in particular to a driving device of a radio frequency power supply, a radio frequency power supply and a semiconductor process equipment. BACKGROUND

[0002] In the semiconductor industry, the radio frequency power supply is a core component of the semiconductor process equipment. With the change of etching materials and the improvement of etching process, it can be applied in a wider frequency range. However, the current radio frequency power supply is single frequency, such as can only be used at 13.56MHz frequency, and cannot be reused at other main frequencies, resulting in a prolonged development cycle of the radio frequency power supply. SUMMARY

[0003] In view of the above problems, the present application is proposed to provide a driving device of a radio frequency power supply, a radio frequency power supply and a semiconductor process equipment which overcome the above problems or at least partially solve the above problems.

[0004] To solve the above problems, in the first aspect of the present application, the present application discloses a driving device of a radio frequency power supply, comprising:

[0005] A radio frequency drive signal input module for outputting a radio frequency drive signal;

[0006] A gate level drive amplification module, the input end of which is connected with the output end of the radio frequency drive signal input module, for primary amplification of the radio frequency drive signal;

[0007] A controllable frequency selection network module, the input end of which is connected with the output end of the gate level drive amplification module, the controllable frequency selection network module being used for adjusting the values of internal elements to correspond to a target frequency, so as to select a radio frequency drive signal matched with the target frequency;

[0008] An impedance conversion module, the input end of which is connected with the output end of the controllable frequency selection network module;

[0009] A secondary drive amplification module, the input end of which is connected with the output end of the impedance conversion module, for secondary amplification of the primary amplified radio frequency drive signal, and outputting a radio frequency power;

[0010] The impedance conversion module is used for impedance matching of the gate level drive amplification module and the secondary drive amplification module.

[0011] In some embodiments, the gate level drive amplification module comprises:

[0012] A gate-level non-inverted drive amplification circuit, an input end of which is connected with an output end of the radio frequency drive signal input module, and an output end of which is connected with an input end of the impedance transformation module.

[0013] A gate-level inverted drive amplification circuit, an input end of which is connected with an output end of the radio frequency drive signal input module, and an output end of which is connected with an input end of the impedance transformation module.

[0014] In some embodiments, the gate-level non-inverted drive amplification circuit comprises:

[0015] A non-inverted gate drive chip, an input end of which is connected with an output end of the radio frequency drive signal input module, and an output end of which is connected with an input end of the controllable frequency selection network module.

[0016] A second resistor, which is located between the input end of the non-inverted gate drive chip and the output end of the radio frequency drive signal input module.

[0017] The gate-level inverted drive amplification circuit comprises:

[0018] An inverted gate drive chip, an input end of which is connected with an output end of the radio frequency drive signal input module, and an output end of which is connected with an input end of the impedance transformation module; the inverted gate drive chip and the non-inverted gate drive chip are mutually inverted.

[0019] A third resistor, which is located between the input end of the inverted gate drive chip and the output end of the radio frequency drive signal input module.

[0020] In some embodiments, the controllable frequency selection network module comprises:

[0021] An inductance-capacitance frequency selection circuit, which is connected in series between the gate-level drive amplification module and the impedance transformation module.

[0022] In some embodiments, the inductance-capacitance frequency selection circuit comprises:

[0023] A variable inductance, one end of which is connected with the gate-level drive amplification module.

[0024] A variable capacitance, one end of which is connected with the variable inductance, and the other end of which is connected with the impedance transformation module.

[0025] In some embodiments, the controllable frequency selection network module further comprises:

[0026] A control unit, which is connected with the variable inductance and the variable capacitance, and is used for adjusting an inductance value of the variable inductance and / or a capacitance value of the variable capacitance.

[0027] In some embodiments, the impedance transformation module comprises:

[0028] a first impedance conversion circuit, an input end of which is connected with an output end of the controllable frequency selection network module, and an output end of which is connected with an input end of the secondary drive amplification module;

[0029] a second impedance conversion circuit, an input end of which is connected with an output end of the gate stage inverse drive amplification circuit, and an output end of which is connected with an input end of the secondary drive amplification module.

[0030] In some embodiments, the first impedance conversion circuit and the second impedance conversion circuit are the same, and the first impedance conversion circuit and the second impedance conversion circuit comprise:

[0031] a planar transformer, a transformer primary coil of the planar transformer being connected with the output end of the controllable frequency selection network module or the output end of the gate stage inverse drive amplification circuit, and a transformer secondary coil of the planar transformer being connected with the input end of the secondary drive amplification module.

[0032] In some embodiments, the planar transformer comprises a planar transformer upper magnetic core, a planar transformer lower magnetic core, the transformer primary coil and the transformer secondary coil,

[0033] the planar transformer upper magnetic core and the planar transformer lower magnetic core are buckled to form a magnetic flux path;

[0034] the transformer primary coil and the transformer secondary coil are planar coils and are located in the magnetic flux path.

[0035] In some embodiments, the planar coils are formed by printed circuit board metal wires.

[0036] In some embodiments, the secondary drive amplification module comprises:

[0037] a full-bridge rectification circuit, an input end of which is connected with the first impedance conversion circuit and the second impedance conversion circuit.

[0038] In some embodiments, the radio frequency drive signal input module, the gate stage drive amplification module, the controllable frequency selection network module, the impedance conversion module and the secondary drive amplification module are laid on a heat dissipation metal plate, and the heat dissipation metal plate and a printed circuit board where the planar coils are located form a T-shaped structure.

[0039] In some embodiments, a plane of the planar coil is parallel to the heat dissipation metal plate, for providing a magnetic field when energized.

[0040] In a second aspect of the present application, the embodiments of the present application disclose a radio frequency power supply, which comprises the driving device of the radio frequency power supply, the power amplifier and the radio frequency power supply sensor as described above, the output end of the driving device is connected with the input end of the power amplifier; the output end of the power amplifier is connected with the input end of the radio frequency power supply sensor; and the radio frequency power supply sensor is used for detecting the radio frequency power.

[0041] In a third aspect of the present application, the embodiments of the present application disclose a semiconductor process equipment, which comprises a radio frequency power supply, a radio frequency matcher and a process chamber, the radio frequency power supply is the radio frequency power supply as described above, the radio frequency power supply is used for generating radio frequency power, the radio frequency matcher is used for impedance matching between the radio frequency power and the load of the process chamber; and the process chamber is used for carrying a wafer to be processed.

[0042] The embodiments of the present application have the following advantages:

[0043] The radio frequency driving signal input module outputs a radio frequency driving signal; the input end of the gate level driving amplification module is connected with the output end of the radio frequency driving signal input module, and the radio frequency driving signal is primary amplified; the controllable frequency selection network module is used for the radio frequency driving signal matched with the target frequency based on the gating; the input end of the impedance transformation module is connected with the output end of the controllable frequency selection network module; the input end of the secondary driving amplification module is connected with the output end of the impedance transformation module, and the primary amplified radio frequency driving signal is secondary amplified, and the radio frequency power is output; and the impedance transformation module matches the impedance of the gate level driving amplification module and the secondary driving amplification module. The radio frequency driving signal input module, the gate level driving amplification module, the controllable frequency selection network module, the impedance transformation module and the secondary driving amplification module are used for driving the radio frequency power supply together, and the radio frequency driving signal of the specified frequency is gated through the controllable frequency selection network module; and the driving device can be reused in the radio frequency power supply with different main frequencies. BRIEF DESCRIPTION OF DRAWINGS

[0044] FIG. 1 is a structural block diagram of a driving device of a radio frequency power supply according to an embodiment of the present application;

[0045] FIG. 2 is a structural block diagram of another driving device of a radio frequency power supply according to an embodiment of the present application;

[0046] FIG. 3 is a circuit schematic diagram of another driving device of a radio frequency power supply according to an embodiment of the present application;

[0047] FIG. 4 is a circuit node waveform schematic diagram of another driving device of a radio frequency power supply according to an embodiment of the present application;

[0048] FIG. 5 is a transformer schematic diagram of another driving device of a radio frequency power supply according to an embodiment of the present application;

[0049] Fig. 6 is a device layout diagram of another embodiment of the driving device of the radio frequency power supply of the present application;

[0050] Fig. 7 is a device layout diagram of another embodiment of the driving device of the radio frequency power supply of the present application;

[0051] Fig. 8 is a device layout diagram of another embodiment of the driving device of the radio frequency power supply of the present application;

[0052] Fig. 9 is a device layout diagram of another embodiment of the semiconductor processing equipment of the present application. DETAILED DESCRIPTION

[0053] In order to make the above objectives, features and advantages of the present application more obvious and easy to understand, the present application will be further described in detail below with reference to the drawings and specific embodiments.

[0054] Referring to Fig. 1, a structural block diagram of an embodiment of the driving device of the radio frequency power supply of the present application is shown, which can specifically include the following parts:

[0055] The radio frequency driving signal input module 1 is used to output a radio frequency driving signal.

[0056] The gate level driving amplification module 2 is connected with the output end of the radio frequency driving signal input module 1, and is used to perform primary amplification on the radio frequency driving signal.

[0057] The controllable frequency selection network module 3 is connected with the output end of the gate level driving amplification module 2, and the controllable frequency selection network module 3 is used to adjust the values of the internal elements to correspond to the target frequency, so as to select the radio frequency driving signal matched with the target frequency.

[0058] The impedance transformation module 4 is connected with the output end of the controllable frequency selection network module 3.

[0059] The secondary driving amplification module 5 is connected with the output end of the impedance transformation module 4, and is used to perform secondary amplification on the primary amplified radio frequency driving signal, and output a radio frequency power.

[0060] The impedance transformation module 4 is used to perform impedance matching on the gate level driving amplification module 2 and the secondary driving amplification module 5.

[0061] In the embodiment of the present application, the driving device can include a radio frequency driving signal input module 1, a gate level driving amplification module 2, a controllable frequency selection network module 3, an impedance transformation module 4, and a secondary driving amplification module 5. The radio frequency driving signal input module 1, the gate level driving amplification module 2, the controllable frequency selection network module 3, the impedance transformation module 4, and the secondary driving amplification module 5 are connected in sequence. That is, the input end of the gate level driving amplification module 2 is connected with the output end of the radio frequency driving signal input module 1, the input end of the controllable frequency selection network module 3 is connected with the output end of the gate level driving amplification module 2, the input end of the impedance transformation module 4 is connected with the output end of the controllable frequency selection network module 3, and the input end of the secondary driving amplification module 5 is connected with the output end of the impedance transformation module 4. The radio frequency driving signal input module 1 outputs a radio frequency driving signal. The gate level driving amplification module 2 amplifies the radio frequency driving signal output by the previous stage by one level; the controllable frequency selection network module 3 can select the radio frequency driving signal matched with the target frequency when a user selects a certain set frequency (i.e., a target frequency), by adjusting the values of the internal elements thereof to correspond to the target frequency. Selection refers to selecting a signal of a specific frequency from a plurality of signals of different frequencies. When the values of the internal elements of the controllable frequency selection network module 3 are adjusted to the values corresponding to the target frequency, only the radio frequency driving signal matched with the target frequency can pass through the controllable frequency selection network module 3 smoothly, and signals of other frequencies are suppressed. This frequency selectivity is achieved by adjusting the values of the internal elements.

[0062] The impedance transformation module 4 matches the gate level driving amplification module 2 with the secondary driving amplification module 5 in impedance to achieve the best output efficiency; and the secondary driving amplification module 5 amplifies the radio frequency driving signal amplified by one level by two levels. In addition, in the embodiment of the present application, a driving output module 6 can also be included, which is connected with the output end of the secondary driving amplification module 5, for outputting the radio frequency driving signal amplified by two levels, i.e., outputting radio frequency power outward.

[0063] The embodiment of the application outputs a radio frequency driving signal through a radio frequency driving signal input module 1; an input end of a gate level driving amplification module 2 is connected with an output end of the radio frequency driving signal input module 1, and the gate level driving amplification module 2 is used for performing primary amplification on the radio frequency driving signal; a controllable frequency selection network module 3 adjusts values of internal elements of the controllable frequency selection network module 3 to correspond to a target frequency, so as to select a radio frequency driving signal matched with the target frequency; an input end of an impedance transformation module 4 is connected with an output end of the controllable frequency selection network module 3; an input end of a secondary driving amplification module 5 is connected with an output end of the impedance transformation module 4, and the secondary driving amplification module 5 is used for performing secondary amplification on the radio frequency driving signal after the primary amplification, and a driving output module 6 outputs radio frequency power; the impedance transformation module 4 is used for performing impedance matching on the gate level driving amplification module 2 and the secondary driving amplification module 5. The radio frequency power is driven through the radio frequency driving signal input module 1, the gate level driving amplification module 2, the controllable frequency selection network module 3, the impedance transformation module 4 and the secondary driving amplification module 5, and the radio frequency driving signal of a specified frequency (i.e., the target frequency) is selected through the controllable frequency selection network module 3; so that the driving device can be reused to radio frequency power of different main frequencies.

[0064] Referring to FIG. 2, a structural block diagram of another embodiment of the driving device of the radio frequency power supply of the application is shown, which can specifically include the following parts:

[0065] The radio frequency driving signal input module 1 is used for outputting a radio frequency driving signal.

[0066] The input end of the gate level driving amplification module 2 is connected with the output end of the radio frequency driving signal input module 1, and the gate level driving amplification module 2 is used for performing primary amplification on the radio frequency driving signal.

[0067] The input end of the controllable frequency selection network module 3 is connected with the output end of the gate level driving amplification module 2, and the controllable frequency selection network module 3 is used for adjusting values of internal elements of the controllable frequency selection network module 3 to correspond to a target frequency, so as to select a radio frequency driving signal matched with the target frequency from the radio frequency driving signal after the primary amplification.

[0068] The input end of the impedance transformation module 4 is connected with the output end of the controllable frequency selection network module 3.

[0069] The input end of the secondary driving amplification module 5 is connected with the output end of the impedance transformation module 4, and the secondary driving amplification module 5 is used for performing secondary amplification on the radio frequency driving signal after the primary amplification, and the driving output module 6 outputs radio frequency power.

[0070] The impedance transformation module 4 is used for performing impedance matching on the gate level driving amplification module 2 and the secondary driving amplification module 5.

[0071] The gate level driving amplification module 2 includes:

[0072] The gate-level same-phase drive amplification circuit 21 is connected with the output end of the radio frequency drive signal input module 1, and the output end of the gate-level same-phase drive amplification circuit 21 is connected with the input end of the controllable frequency selection network module 3.

[0073] The gate-level opposite-phase drive amplification circuit 22 is connected with the output end of the radio frequency drive signal input module 1, and the output end of the gate-level opposite-phase drive amplification circuit 22 is connected with the input end of the impedance conversion module 4.

[0074] In the embodiment of the application, the drive device of the radio frequency power supply can include a radio frequency drive signal input module 1, a gate-level same-phase drive amplification circuit 21, a gate-level opposite-phase drive amplification circuit 22, a controllable frequency selection network module 3, an impedance conversion module 4 and a secondary drive amplification module 5. The impedance conversion module 4 includes a first impedance conversion circuit 41 and a second impedance conversion circuit 42.

[0075] The output end of the radio frequency drive signal input module 1 is connected with the input end of the gate-level same-phase drive amplification circuit 21 and the gate-level opposite-phase drive amplification circuit 22 respectively, and the radio frequency drive signal input module 1 is, for example, a DDS (Direct Digital Synthesizer, direct digital synthesis) signal input module. The output end of the gate-level same-phase drive amplification circuit 21 is connected with the input end of the controllable frequency selection network module 3, the output end of the controllable frequency selection network module 3 is connected with the input end of the first impedance conversion circuit 41, the output end of the first impedance conversion circuit 41 is connected with the input end of the secondary drive amplification module 5, and the output end of the secondary drive amplification module 5 is connected with the drive output positive unit 61. The output end of the gate-level opposite-phase drive amplification circuit 22 is connected with the input end of the second impedance conversion circuit 42, the output end of the second impedance conversion circuit 42 is connected with the input end of the secondary drive amplification module 5, and the output end of the secondary drive amplification module 5 is connected with the drive output negative unit 62. The radio frequency drive signal input module 1 provides a drive signal required by radio frequency power output; the gate-level same-phase drive amplification circuit 21 is used for amplifying the radio frequency drive signal input from the previous stage in phase; and the gate-level opposite-phase drive amplification circuit 22 is used for amplifying the radio frequency drive signal input from the previous stage in opposite phase.

[0076] In some embodiments, the internal elements of the controllable frequency selection network module 3 can include a variable capacitor and a variable inductor, one end of the variable inductor being connected to the output end of the gate-level driving amplification module 2; one end of the variable capacitor being connected to the other end of the variable inductor, and the other end of the variable capacitor being connected to the input end of the impedance conversion module 4. When the user selects a certain set frequency (i.e., a target frequency), the radio frequency driving signal matching the target frequency is selected by adjusting the values of the variable capacitor and the variable inductor to correspond to the target frequency. In addition, the controllable frequency selection network module 3 can have a control unit. The control unit is connected to the variable inductor and the variable capacitor, respectively. The control unit sets the pre-set positions of the variable capacitor and the variable inductor, i.e., changes the inductance value of the variable inductor and / or the capacitance value of the variable capacitor, so that the adjusted values of the variable capacitor and the variable inductor correspond to the target frequency.

[0077] The first impedance conversion circuit 41 matches the impedance between the gate-level in-phase driving amplification circuit 21 and the corresponding field effect transistor in the secondary driving amplification module 5 to achieve optimal output efficiency; and the second impedance conversion circuit 42 matches the impedance between the gate-level anti-phase driving amplification circuit 22 and the corresponding field effect transistor in the secondary driving amplification module 5 to achieve optimal output efficiency. The secondary driving amplification module 5 is used to amplify the signal amplified by the primary driving amplification module once again; the driving output positive unit 61 is used to output the signal amplified by the secondary driving amplification module and in-phase with the radio frequency driving signal; and the driving output negative unit 62 is used to output the signal amplified by the secondary driving amplification module and anti-phase with the radio frequency driving signal. The radio frequency driving signal is, for example, a DDS (Direct Digital Synthesizer) input signal.

[0078] By inputting the radio frequency driving signal into the gate level same phase driving amplification circuit 21 and the gate level opposite phase driving amplification circuit 22 respectively, a square wave signal with larger phase stagger and amplitude can be finally output through the driving output positive unit 61 and the driving output negative unit 62. Specifically, the signal output by the gate level same phase driving amplification circuit 21 enters the corresponding field effect tube in the secondary driving amplification module 5 after passing through the first impedance transformation circuit 41, and then enters the driving output positive unit 61 from the common terminal of the corresponding field effect tube in the secondary driving amplification module 5. The signal output by the gate level opposite phase driving amplification circuit 22 enters the corresponding field effect tube in the secondary driving amplification module 5 after passing through the second impedance transformation circuit 42, and then enters the driving output negative unit 62 from the common terminal of the corresponding field effect tube in the secondary driving amplification module 5. At this time, the driving output positive unit 61 and the driving output negative unit 62 output a square wave signal with larger phase stagger and amplitude to drive the subsequent power amplifier circuit. By inputting a single radio frequency driving signal (for example, a square wave signal) into the gate level same phase driving and the gate level opposite phase driving of the gate level same phase driving amplification circuit 21 and the gate level opposite phase driving amplification circuit 22 respectively, and then into the secondary amplification of the secondary driving amplification module 5, two paths of hundred-watt power driving output with opposite phases can be realized, and the single power driving ratio is high.

[0079] Referring to FIG. 3, the gate level driving amplification module 2 is composed of the gate level same phase driving amplification circuit 21 and the gate level opposite phase driving amplification circuit 22, which work simultaneously to realize the driving output function of two opposite phases. The impedance transformation module 4 is composed of the first impedance transformation circuit 41 and the second impedance transformation circuit 42. The secondary driving amplification module 5 is composed of a full-bridge rectifier circuit. The input end of the full-bridge rectifier circuit is connected with the first impedance transformation circuit 41 and the second impedance transformation circuit 42. The full-bridge rectifier circuit is composed of field effect tubes Q1-Q4, which are divided into two groups of field effect tube Q1 and field effect tube Q4, and field effect tube Q2 and field effect tube Q3, and the two groups of field effect tubes are alternately turned on. The variable inductance (i.e., the first inductance L1) and the variable capacitance C1 form a series resonance to select the radio frequency driving signal matched with the target frequency; the fourth resistance R4, the fifth resistance R5, the sixth resistance R6, and the seventh resistance R7 are connected in series with the gates of the field effect tube Q1, the field effect tube Q2, the field effect tube Q3, and the field effect tube Q4 respectively, for reducing signal overshoot and preventing oscillation; the gates of the field effect tube Q1, the field effect tube Q2, the field effect tube Q3, and the field effect tube Q4 are connected with the second inductance L2 and the eighth resistance R8, the third inductance L3 and the ninth resistance R9, the fourth inductance L4 and the tenth resistance R10, and the fifth inductance L5 and the eleventh resistance R11, to form a discharge circuit of the field effect tube Q1, the field effect tube Q2, the field effect tube Q3, and the field effect tube Q4, so as to quickly discharge them in the process of turning off the field effect tubes.

[0080] The radio frequency drive signal input module 1 can use an SMA (surface mounted antenna) power supply as a radio frequency drive signal generation power supply. The gate level in-phase drive amplification circuit 21 uses an in-phase gate drive chip U1, and the gate level anti-phase drive amplification circuit 22 includes an anti-phase gate drive chip U2. The in-phase gate drive chip U1 and the anti-phase gate drive chip U2 are mutually anti-phase. The output end of the SMA inner core is connected to the output end of the radio frequency drive signal input module 1, one end of the first resistor R1, one end of the second resistor R2, and one end of the third resistor R3. The other end of the first resistor R1 is grounded. The other end of the second resistor R2 is connected to the input pin 1 pin of the in-phase gate drive chip U1. The 5 pin is an output pin. One end of the variable inductor (i.e., the first inductor L1) is connected. The 3 pin is connected to the DC1 power supply. The 2 and 4 pins are grounded. The other end of the third resistor R3 is connected to the input pin 1 pin of the anti-phase gate drive chip U2. The 5 pin is an output pin. The 3 pin is connected to the DC1 power supply. The 2 and 4 pins are grounded. The other end of the variable inductor (i.e., the first inductor L1) is connected in series with one end of the variable capacitor C1. The other end of the variable capacitor C1 is connected to the same name end 1 pin of the primary coil of the transformer T1 and the different name end 2 pin of the primary coil of the transformer T2, respectively. The 5 pin of the anti-phase gate drive chip U2 is connected to the different name end 2 pin of the primary coil of the transformer T1 and the same name end 1 pin of the primary coil of the transformer T2, respectively. The same name end 3 pin of the secondary 1 coil of the transformer T1 is connected to one end of the third inductor L3 and one end of the fifth resistor R5. The other end of the third inductor L3 is connected to one end of the ninth resistor R9. The other end of the ninth resistor R9 is connected to the radio frequency ground GND1. The different name end 4 pin of the secondary 1 coil of the transformer T1 is connected to the radio frequency ground GND1. The other end of the fifth resistor R5 is connected to the gate 1 pin of the field effect transistor Q2. The source 3 pin of the field effect transistor Q2 is connected to the radio frequency ground GND1. The drain 2 pin of the field effect transistor Q2 is connected to the radio frequency drive output RF_DRIVE+, the source 3 pin of the field effect transistor Q1, the same name end 5 pin of the secondary 2 coil of the transformer T1, and one end of the eighth resistor R8, respectively. The other end of the eighth resistor R8 is connected to one end of the second inductor L2. The other end of the second inductor L2 is connected to the different name end 6 pin of the secondary 2 coil of the transformer T1 and one end of the fourth resistor R4. The other end of the fourth resistor R4 is connected to the gate 1 pin of the field effect transistor Q1. The drain 2 pin of the field effect transistor Q1 is connected to the power supply DC BUSS. The controllable frequency selection network module 3 controls the variable inductor (i.e., the first inductor L1) and the variable capacitor C1 through the control unit. The variable inductor (i.e., the first inductor L1) and the variable capacitor C1 are connected in series with the control unit. When the user selects the corresponding target frequency through the control unit, the movable parts of the variable inductor (i.e., the first inductor L1) and the variable capacitor C1 are respectively changed to the preset positions corresponding to the target frequency, so that the values of the two are corresponding to the target frequency, and the radio frequency drive signal matched with the target frequency is realized.

[0081] The 5-pin of the inverse gate driving chip U2 is connected with the same name end 1-pin of the primary coil of the transformer T2 and the different name end 2-pin of the primary coil of the transformer T1; the same name end 3-pin of the secondary coil of the transformer T2 is connected with one end of the fifth inductor L5 and one end of the seventh resistor R7, the other end of the fifth inductor L5 is connected with one end of the eleventh resistor R11, the other end of the eleventh resistor R11 is connected with the radio frequency ground GND1, the different name end 4-pin of the secondary coil of the transformer T2 is connected with the radio frequency ground GND1; the other end of the seventh resistor R7 is connected with the gate 1-pin of the field effect transistor Q4, the source 3-pin of the field effect transistor Q4 is connected with the radio frequency ground GND1, the drain 2-pin of the field effect transistor Q4 is connected with the radio frequency driving output RF_DRIVE-, the source 3-pin of the field effect transistor Q3, the same name end 5-pin of the secondary 2 coil of the transformer T2 and one end of the tenth resistor R10 respectively, the other end of the tenth resistor R10 is connected with one end of the fourth inductor L4, the other end of the fourth inductor L4 is connected with the different name end 6-pin of the secondary 2 coil of the transformer T2 and one end of the sixth resistor R6, the other end of the sixth resistor R6 is connected with the gate 1-pin of the field effect transistor Q3, the drain 2-pin of the field effect transistor Q3 is connected with the power supply DC BUSS.

[0082] The field effect transistor Q1 and the field effect transistor Q4, the field effect transistor Q2 and the field effect transistor Q3 are two groups, and the two groups of field effect transistors are alternately turned on. As shown in FIG. 4, the DDS input signal output by the radio frequency driving signal input module 1 is, for example, a square wave signal with a size of positive and negative 5V and a duty cycle of 50%, and a target frequency preset by a user, for example, a target frequency of 13.56MHz. One way of the DDS input signal passes through the gate level in-phase driving amplification circuit 21 and becomes a square wave signal of 0V to DC1, DC1 is the power supply voltage of the in-phase gate driving chip U1 and the inverse gate driving chip U2, generally DC10-15V, and then passes through the first impedance conversion circuit 41 and the secondary driving amplification module 5, and the square wave signal of 0V to DC1 is further amplified to become a square wave signal of 0V to DC BUSS, DC BUSS is the power supply voltage of the field effect transistor Q1, the field effect transistor Q2, the field effect transistor Q3 and the field effect transistor Q4, generally DC100-200V. The other way of the DDS input signal passes through the gate level inverse driving amplification circuit 22 and becomes a square wave signal of DC1 to 0V, and then passes through the second impedance conversion circuit 42 and the secondary driving amplification module 5, and the square wave signal of DC1 to 0V is further amplified to become a square wave signal of DC BUSS to 0V.

[0083] When the DDS IN (radio frequency drive signal) input signal is high, at this time after driving the MIC4420 chip through the non-inverting gate, it is still high, that is, the 1 pin of the transformer T1 is at high level, at this time the 3 pin and the 5 pin of the same name end of the transformer T1 are at high level, the VGS of the field effect tube Q1 is at low level, the field effect tube Q1 is cut off, the VGS of the field effect tube Q2 is at high level, the field effect tube Q2 is turned on, and the drive output negative unit 62 (that is, RF Drive-) outputs the GND1 level; similarly, when the DDS IN input signal is high, at this time after driving the chip U2 through the inverting gate, it becomes low, that is, the 1 pin of the transformer T2 is at low level, at this time the 3 pin and the 5 pin of the same name end of the transformer T2 are at low level, the VGS of the field effect tube Q4 is at low level, the field effect tube Q4 is cut off, the VGS of the field effect tube Q3 is at high level, the field effect tube Q3 is turned on, and the drive output negative unit 62 (that is, RF Drive-) outputs the DC BUSS level. Similarly, when the DDS IN input signal is low, the drive output positive unit 61 (that is, RF Drive+) and the drive output negative unit 62 (that is, RF Drive-) are just opposite to high level. In this way, the input signal is amplified through two stages, the drive power output can reach hundreds of watts, which can further drive the subsequent power amplifier module to realize kilowatt-level radio frequency power conversion.

[0084] The controllable frequency selection network module 3 can be composed of an inductance-capacitance frequency selection circuit, which is connected in series between the gate drive amplification module 2 and the impedance conversion module 4. By adjusting the size of the inductance and capacitance in the inductance-capacitance frequency selection circuit, it can be matched with the target frequency, so as to select the radio frequency drive signal matched with the target frequency. The inductance-capacitance frequency selection circuit can include a variable inductance (i.e., a first inductance L1) and a variable capacitance C1. The variable inductance (i.e., the first inductance L1), the variable capacitance C1, and the primary coil inductance of the impedance converter T1 form a series resonance. The target frequency is, for example, 13.56 MHz. Under the control of the control unit, the values of the variable inductance (i.e., the first inductance L1) and the variable capacitance C1 are adjusted so that they resonate with the primary coil inductance of the impedance converter T1 at other frequencies, realizing wide frequency output. That is, the variable inductance (i.e., the first inductance L1) and the variable capacitance C1 are respectively connected to the control unit, so that the values of the variable inductance (i.e., the first inductance L1) and the variable capacitance C1 can be controlled by the control unit. When the user selects the target frequency through the control unit, the variable inductance (i.e., the first inductance L1) and the variable capacitance C1 are respectively transformed to the preset position corresponding to the target frequency, so as to realize the output of the radio frequency drive signal matched with the target frequency. By adjusting the values of the variable inductance (i.e., the first inductance L1) and the variable capacitance C1 through the control unit, the variable inductance (i.e., the first inductance L1) and the variable capacitance C1 resonate with the primary coil inductance of the impedance converter T1 at the set frequency of 2 MHz or 27 MHz, so as to realize the output of the radio frequency drive signal at 2 MHz or 27 MHz, thereby realizing the rapid multiplexing of 2M products or 27MHz products. In the present application, the variable inductance (i.e., the first inductance L1) is not limited to one independent adjustable inductance, but can be composed of multiple adjustable inductances or adjustable inductances and fixed inductances in series. Similarly, the variable capacitance C1 is not limited to one independent adjustable capacitance, but can be composed of multiple adjustable capacitances or adjustable capacitances and fixed capacitances in parallel.

[0085] In the embodiment of the present application, the first impedance conversion circuit 41 and the second impedance conversion circuit 42 are the same, both of which include a planar transformer for impedance matching. The planar transformer includes a planar transformer upper magnetic core, a planar transformer lower magnetic core, a transformer primary coil, and a transformer secondary coil. The planar transformer upper magnetic core and the planar transformer lower magnetic core are buckled to form a magnetic flux path. The transformer primary coil and the transformer secondary coil are planar coils and are located in the magnetic flux path.

[0086] Specifically, the planar transformer comprises a planar transformer upper magnetic core and a planar transformer lower magnetic core, a transformer primary, a transformer secondary 1, and a transformer secondary 2. The planar transformer upper magnetic core and the planar transformer lower magnetic core are buckled to form a magnetic flux path of the transformer; the transformer primary, the transformer secondary 1, and the transformer secondary 2 form a primary side and a secondary side of the transformer. Specifically, the planar transformer uses a nickel-zinc material planar ER-type transformer with a ui value of 100. The transformer magnetic material is buckled on both sides of the PCB board, and a clamp is used outside. Referring to FIG. 5, the primary and secondary coils abandon the traditional winding method and use PCB lines instead. This method has good consistency and impedance consistency, small size, and uses FR4 mixed pressure technology for the PCB board, which has 5 layers of laminates. The first, third, and fifth layers are FR4 board materials, and the second and fourth layers are PP layers, forming 6 layers of wiring layers. The PCB board lines and the ER-type magnetic core transformer form a micro planar transformer T1 and T2, which are the first impedance conversion circuit 41 and the second impedance conversion circuit 42. The planar transformer primary and secondary voltage transformation ratio can be set according to requirements, and the embodiments of the present application are not limited. By using PCB lines instead of traditional cable winding, the ER-type magnetic core is buckled outside and clamped with a clamp to form a micro planar transformer. This structure is simple, small in size, good in processing consistency, and easy to assemble.

[0087] Further, the radio frequency drive signal input module 1, the gate level drive amplification module 2, the controllable frequency selection network module 3, the impedance conversion module 4, and the secondary drive amplification module 5 are laid on the heat dissipation metal plate, and the heat dissipation metal plate and the printed circuit board where the planar coil is located form a T-shaped structure.

[0088] As shown in FIGS. 6 and 7, the entire heat dissipation copper plate and the PCB board material form an inverted T-shaped spatial layout, greatly saving space occupation. Further, the plane of the planar coil is parallel to the heat dissipation metal plate, which is used to provide a magnetic field when energized. By ingeniously designing a three-dimensional structure, the volume of the drive circuit is greatly reduced, thereby realizing the miniaturization of the radio frequency power supply product.

[0089] Referring to FIG. 8, a 120mm long, 30mm wide and 5mm thick heat dissipation copper plate is processed, as shown in FIG. 6, 1 is an insulating heat dissipation ceramic sheet, 2 is a heat dissipation copper plate, 3 is a gate drive chip U2, 4 is a gate drive chip U1, and 5 is a field effect tube. As shown in FIG. 8, shallow grooves are dug on the copper plate above U1, U2, Q1, Q2, Q3 and Q4 where welding and fixing are required. The groove size is equal to the width of the to-be-welded device bonding bottom, and a tolerance is left. The field effect tubes Q1, Q2, Q3 and Q4 are welded with a bottom plate of the same width of the ceramic sheet below, so as to play the role of drain electrode and ground insulation. First, the to-be-welded device is placed in the to-be-welded position and fixed with a fastening screw to prevent displacement during welding. A welding tool is used to weld and form on the heating table at one time, and the gate drive chips U1, U2, field effect tubes Q1, Q2, Q3 and Q4 are made into a complete machine drive module, which is convenient for installation and maintenance. The heat dissipation copper plate is fixed on the long strip-shaped water cooling pipe by using three screws, and the back of the heat dissipation copper plate is coated with thermal conductive silicone grease.

[0090] The embodiment of the present application further discloses a radio frequency power supply, which comprises the driving device, the power amplifier and the radio frequency power supply sensor of the radio frequency power supply, the output end of the driving device is connected with the input end of the power amplifier, the output end of the power amplifier is connected with the input end of the radio frequency power supply sensor, and the radio frequency power supply sensor is used for detecting radio frequency power.

[0091] Further, the embodiment of the present application further discloses a semiconductor process equipment, which comprises a radio frequency power supply, a radio frequency matcher and a process chamber, the radio frequency power supply is the radio frequency power supply, the radio frequency power supply is used for generating radio frequency power, the radio frequency matcher is used for matching impedance between the radio frequency power and a load of the process chamber, and the process chamber is used for carrying a wafer to be processed.

[0092] For example, referring to FIG. 9, the conductor processing equipment can be an ICP (inductively coupled plasma) etching equipment. The ICP etching equipment generally includes a Source power source, a Bias power source, a reaction chamber, an upper matching device and a lower matching device, an output end of the Source power source is connected with an input end of the upper matching device, an output end of the Bias power source is connected with an input end of the lower matching device, and an output end of the upper matching device and an output end of the lower matching device are respectively connected with an upper electrode (for example, a coil) and a lower electrode (for example, arranged on a wafer supporting device) of the reaction chamber. The Source power source is used to provide energy required for plasma excitation; the upper matching device is used to match the Source power source and the reaction chamber in impedance, so that the reaction chamber obtains maximum load power; the Bias power source is used to provide energy required for attracting plasma to move towards the wafer; the lower matching device is used to match the Bias power source and the reaction chamber in impedance, so that the reaction chamber obtains maximum load power; and the reaction chamber is used to provide an environment required for plasma excitation. The wideband radio frequency power driving circuit is applied to a 13.56 MHz pulse radio frequency power source, so that the structure of the radio frequency part of the 13.56 MHz pulse radio frequency power source is simplified, and too much space is not occupied, so that the overall size of the power source is reduced; the driving module has a high unit pushing ratio, and can push a radio frequency power output of 5.5 KW at most; not only can be used in a radio frequency power source with a frequency of 13.56 MHz, but also can control the variable inductance (that is, the first inductance L1) and the variable capacitor C1 through the control unit of the controllable frequency selection network module 1, when a user selects a corresponding target frequency through the control unit, the variable inductance (that is, the first inductance L1) and the variable capacitor C1 are respectively transformed to a preset position corresponding to the target frequency, so as to realize output of a radio frequency driving signal matched with the target frequency, for example, by adjusting the values of the variable inductance (that is, the first inductance L1) and the variable capacitor C1, the variable inductance (that is, the first inductance L1) and the variable capacitor C1 and the primary coil inductance of the impedance transformer T1 resonate at a frequency of 2 MHz or 27 MHz, so as to realize power driving output of 2 MHz or 27 MHz, thereby realizing reuse of 2 MHz or 27 MHz products. By using the etching equipment of the power source, similar products can be reused, new processes can be quickly applied, and product competitiveness can be improved; under the same size of the radio frequency power source, larger power output capacity is realized, which is helpful for the etching equipment to apply to high-power etching applications; with the reduction of the size of the radio frequency power source, the overall size of the etching equipment is reduced, which is helpful for the etching equipment to develop in the direction of integration.

[0093] It should be noted that, for the method embodiments, the operations performed are described in sequence for simplicity and clarity, but those skilled in the art will appreciate that some steps can be performed in other sequences or even concurrently. Also, those skilled in the art will appreciate that the examples given are illustrative only and are not meant to limit application embodiments in any way.

[0094] Each embodiment described in the specification is provided in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between embodiments can be mutually referred to.

[0095] Those skilled in the art will understand that the embodiments of the application can be provided as a method, device, or computer program product. Therefore, the embodiments of the application can be in the form of a completely hardware embodiment, a completely software embodiment, or an embodiment combining software and hardware aspects. Moreover, the embodiments of the application can be in the form of a computer program product implemented on one or more computer-usable storage media (including, but not limited to, disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.

[0096] The embodiments of the application are described with reference to the flowcharts and / or block diagrams of the methods, terminal devices (systems), and computer program products according to the embodiments of the application. It should be understood that each flow and / or block in the flowcharts and / or block diagrams, and the combination of flows and / or blocks in the flowcharts and / or block diagrams can be implemented by computer program instructions. These computer program instructions can be provided to a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing terminal devices to produce a machine, so that the instructions executed by the computer or other programmable data processing terminal devices produce a device that implements the functions specified in one or more flows in the flowcharts and / or one or more blocks in the block diagrams.

[0097] These computer program instructions can also be stored in a computer-readable memory that can direct the computer or other programmable data processing terminal devices to work in a specific manner, so that the instructions stored in the computer-readable memory produce a product including instruction devices that implement the functions specified in one or more flows in the flowcharts and / or one or more blocks in the block diagrams.

[0098] These computer program instructions can also be loaded into a computer or other programmable data processing terminal device, so that a series of operational steps are performed on the computer or other programmable terminal device to generate a computer-implemented process, so that the instructions executed on the computer or other programmable terminal device provide steps for implementing the functions specified in one or more flows of the flow chart and / or one or more blocks of the block diagram.

[0099] Although the preferred embodiments of the application have been described, those skilled in the art will be able to make additional changes and modifications to these embodiments once they have the basic inventive concept. Therefore, the appended claims are intended to cover all changes and modifications falling within the scope of the embodiments of the application.

[0100] Finally, it should also be noted that, in this document, relational terms such as first and second and the like can only be used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply that there is any such actual relationship or order between these entities or operations. Moreover, the terms "comprising", "including", or any other variant thereof are intended to cover non-exclusive inclusion, so that a process, method, article or terminal device including a list of elements does not only include those elements, but also includes other elements not explicitly listed or other elements inherent to such a process, method, article or terminal device. Without more limitations, an element defined by the statement "including a..." does not exclude the presence of additional identical elements in the process, method, article or terminal device including the element.

[0101] The above describes in detail the driving device of a radio frequency power supply, the radio frequency power supply, and the semiconductor process equipment provided by the application. The principles and implementation manners of the application are described by using specific examples. The above description of the embodiments is only used to help understand the method of the application and its core idea. Meanwhile, for those skilled in the art, according to the idea of the application, the specific implementation manners and application ranges can be changed. In summary, the content of the specification should not be understood as a limitation of the application.

Claims

1. A driving device of a radio frequency power source, wherein, The application relates to a radio frequency (RF) drive signal output device. The RF drive signal input module is used for outputting an RF drive signal. The gate-level drive amplification module is connected with the output end of the RF drive signal input module and used for primary amplifying the RF drive signal. The controllable frequency selection network module is connected with the output end of the gate-level drive amplification module and used for adjusting the value of the internal elements to correspond to a target frequency so as to select the RF drive signal matched with the target frequency. The impedance transformation module is connected with the output end of the controllable frequency selection network module. The secondary drive amplification module is connected with the output end of the impedance transformation module and used for secondary amplifying the primary amplified RF drive signal and outputting RF power. The impedance transformation module is used for impedance matching of the gate-level drive amplification module and the secondary drive amplification module.

2. The driving device of a radio frequency power source according to claim 1, wherein The gate-level drive amplification module comprises: The gate-level in-phase drive amplification circuit is connected with the output end of the RF drive signal input module and used for in-phase amplifying the RF drive signal. The gate-level anti-phase drive amplification circuit is connected with the output end of the RF drive signal input module and used for anti-phase amplifying the RF drive signal.

3. The driving apparatus of a radio frequency power source according to claim 2, wherein The gate-level in-phase drive amplification circuit comprises: The in-phase gate drive chip is connected with the output end of the RF drive signal input module and used for in-phase amplifying the RF drive signal. The second resistor is arranged between the input end of the in-phase gate drive chip and the output end of the RF drive signal input module. The gate-level anti-phase drive amplification circuit comprises: The anti-phase gate drive chip is connected with the output end of the RF drive signal input module and used for anti-phase amplifying the RF drive signal. The third resistor is arranged between the input end of the anti-phase gate drive chip and the output end of the RF drive signal input module.

4. The driving apparatus of a radio frequency power source according to any one of claims 1 to 3, wherein The controllable frequency selection network module comprises: The inductance-capacitance frequency selection circuit is connected in series between the gate-level drive amplification module and the impedance transformation module.

5. The driving apparatus of a radio frequency power source according to claim 4, wherein The inductance-capacitance frequency selection circuit comprises: The variable inductor is connected with the gate-level drive amplification module. The variable capacitor is connected with the other end of the variable inductor and the impedance transformation module.

6. The driving apparatus of a radio frequency power source according to claim 5, wherein The controllable frequency selection network module further comprises: The control unit is connected with the variable inductor and the variable capacitor and used for adjusting the inductance value of the variable inductor and / or the capacitance value of the variable capacitor.

7. The driving apparatus of a radio frequency power source according to any one of claims 2 to 6, wherein The impedance transformation module comprises: The first impedance transformation circuit is connected with the output end of the controllable frequency selection network module and used for impedance matching of the secondary drive amplification module. The second impedance transformation circuit is connected with the output end of the gate-level anti-phase drive amplification circuit and used for impedance matching of the secondary drive amplification module.

8. The driving apparatus of a radio frequency power source according to claim 7, wherein The first impedance transformation circuit is the same as the second impedance transformation circuit, and the first impedance transformation circuit and the second impedance transformation circuit comprise: A planar transformer, a transformer primary coil of the planar transformer is connected with an output end of the controllable frequency selection network module or an output end of the gate stage inverse driving amplification circuit, and a transformer secondary coil of the planar transformer is connected with an input end of the secondary driving amplification module.

9. The driving apparatus of a radio frequency power source according to claim 8, wherein The planar transformer comprises a planar transformer upper magnetic core, a planar transformer lower magnetic core, the transformer primary coil and the transformer secondary coil, The planar transformer upper magnetic core and the planar transformer lower magnetic core are buckled to form a magnetic flux path; The transformer primary coil and the transformer secondary coil are planar coils and are located in the magnetic flux path.

10. The driving apparatus of a radio frequency power source according to claim 9, wherein The planar coil is formed by a printed circuit board metal wire.

11. The driving apparatus of a radio frequency power source according to any one of claims 7 to 10, wherein The secondary driving amplification module comprises: A full-bridge rectifier circuit, an input end of the full-bridge rectifier circuit is connected with the first impedance transformation circuit and the second impedance transformation circuit.

12. The driving apparatus of a radio frequency power source according to any one of claims 9 to 11, wherein The radio frequency driving signal input module, the gate stage driving amplification module, the controllable frequency selection network module, the impedance transformation module and the secondary driving amplification module are laid on a heat dissipation metal plate, and the heat dissipation metal plate and a printed circuit board where the planar coil is located form a T-shaped structure.

13. The radio frequency power driving device of claim 12, wherein, A plane of the planar coil is parallel to the heat dissipation metal plate, and is used for providing a magnetic field when energized.

14. A radio frequency power supply wherein, The radio frequency power source comprises the radio frequency power driving device of any one of claims 1-13, a power amplifier and a radio frequency power source sensor, an output end of the driving device is connected with an input end of the power amplifier, an output end of the power amplifier is connected with an input end of the radio frequency power source sensor, and the radio frequency power source sensor is used for detecting the radio frequency power.

15. A semiconductor process apparatus, wherein, The semiconductor process equipment comprises a radio frequency power source, a radio frequency matcher and a process chamber, the radio frequency power source is the radio frequency power source of claim 14, the radio frequency power source is used for generating radio frequency power, the radio frequency matcher is used for impedance matching between the radio frequency power and a load of the process chamber, and the process chamber is used for carrying a wafer to be processed.

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