Oxide polishing compositions and polishing methods

Abstract

Shallow Trench Isolation (STI) chemical mechanical planarization (CMP) polishing compositions, methods and systems of use therefore are provided. The CMP polishing composition comprises abrasives of ceria coated inorganic oxide particles, such as ceria-coated silica; and dual chemical additives for providing the tunable oxide film removal rates and tunable SiN film removal rates and low oxide trench dishing and high oxide: SiN selectivity. Dual chemical additives comprise at least one silicone-and-fluorine containing compound; and at least one of non-ionic organic molecule having more than one hydroxyl functional group.

Description

TITLE OF THE INVENTION:OXIDE POLISHING COMPOSITIONS AND POLISHING METHODSCROSS REFERENCE TO RELATED APPLICATION(S)

[0001] The present application claims the benefit of priority of U.S. Provisional Patent Application No. 63 / 675,067 filed on July 24, 2024, which is incorporated herein by reference in its entirety.BACKGROUND OF THE INVENTION

[0002] This invention relates to the chemical mechanical planarization (CMP) polishing compositions, methods and systems for polishing silicon dioxide (also known as silicon oxide or oxide) in Shallow Trench Isolation (STI) process.

[0003] In the fabrication of microelectronics devices, an important step involved is chemical mechanical polishing to planarize the semiconductor wafer surface and / or planarizing the substrate structure.

[0004] For example, a SiN layer is deposited under a SiO2layer to serve as a polishing stop layer. The role of such polish stop layer is particularly important in Shallow Trench Isolation (STI) structures in front end semiconductor fabrication process. Thus, high selectivity in polishing oxide film vs SiN film is preferred. The selectivity is defined as the ratio of the oxide polish rate to the nitride polish rate. An example is the tunable polishing selectivity rate of silicon dioxide (SiO2) films as compared to silicon nitride (SiN).

[0005] The silicon dioxide (SiO2) films can be Chemical vapor deposition (CVD), Plasma Enhance CVD (PECVD), High Density Plasma CVD Deposition (HDPCVD or HDP), or spin on oxide films

[0006] In the global planarization of patterned STI structures, reducing SiN film removal rates and tuning oxide trench dishing are two key factors to be considered. The lower trench oxide loss will prevent electrical current leaking between adjacent transistors. Non-uniform trench oxide loss across die (within Die) will affect transistor performance and device fabrication yields. Severe trench oxide loss (high oxide trench dishing) will cause poor isolation of transistor resulting in device failure.Therefore, it is also important to reduce trench oxide loss by reducing oxide trench dishing in STI CMP polishing compositions.

[0007] US Patent 5,876,490 discloses the polishing compositions containing abrasive particles and exhibiting normal stress effects. The slurry further contains non-polishing particles resulting in reduced polishing rate at recesses, while the abrasive particles maintain high polish rates at elevations. This leads to improved planarization. More specifically, the slurry comprises cerium oxide particles and polymeric electrolyte and the slurry can be used for Shallow Trench Isolation (STI) polishing applications.

[0008] US Patent 6,964,923 teaches the polishing compositions containing cerium oxide particles and polymeric electrolyte for Shallow Trench Isolation (STI) polishing applications. Polymeric electrolyte being used includes the salts of polyacrylic acid, similar as those in US Patent 5,876,490. Ceria, alumina, silica & zirconia are used as abrasives. Molecular weight for such listed polyelectrolyte is from 300 to 20,000, but in overall, <100,000.

[0009] US Patent 6,616,514 discloses a chemical mechanical polishing slurry for use in removing a first substance from a surface of an article in preference to silicon nitride by chemical mechanical polishing. The chemical mechanical polishing slurry according to the invention includes an abrasive, an aqueous medium, and an organic polyol that does not dissociate protons, said organic polyol including a compound having at least three hydroxyl groups that are not dissociable in the aqueous medium, or a polymer formed from at least one monomer having at least three hydroxyl groups that are not dissociable in the aqueous medium.

[0010] US Patent 6,984,588 discloses a chemical mechanical polishing composition comprising a soluble cerium compound at a pH above 3 and a method to selectively polish a silicon oxide overfill in preference to a silicon nitride film layer in a single step during the manufacture of integrated circuits and semiconductors.

[0011] US Patent 6,544,892 discloses a method of removing silicon dioxide in preference to silicon nitride from a surface of an article by chemical-mechanical polishing comprising polishing said surface using a polishing pad, water, abrasive particles, and an organic compound having both a carboxylic acid functional group and a second functional group selected from amines and halides.

[0012] US Patent 7,247,082 discloses a polishing composition comprising an abrasive, a pH adjusting agent, an improver of a selective ratio, and water, wherein the abrasive is contained in an amount of from 0.5 to 30% by weight, the pH adjusting agent is contained in an amount of from 0.01 to 3% by weight, the improver of a selective ratio is contained in an amount of 0.3 to 30% by weight, and water is contained in an amount of 45 to 99.49% by weight, wherein the weight % is based on the weight of the polishing composition, and wherein the improver is one or more compounds selected from the group consisting of methylamine, ethylamine, propylamine, isopropyl amine, dimethylamine, diethylamine, dipropylamine, diisopropylamine, ethylenediamine, 1 ,2-diaminopropane, 1 ,3-propanediamine, 1 ,4- butanediamine, hexamethylenediamine, N,N,N',N'-tetramethyl-1 ,6-diaminohexane, 6- (dimethylamino)-l -hexanol, bis(3-aminopropyl)amine, triethylenetetraamine, diethylene glycol bis(3-aminopropyl) ether, piperazine, and piperidine.

[0013] US Patent 8,778,203 discloses a method for selectively removing a target material on a surface of a substrate, the method comprising the steps of: providing a substrate comprising a target material and a non-target material; dissolving oxygen in a polishing solution to achieve a pre-determined dissolved oxygen concentration, the polishing solution having a pH of from about 5 to about 11 , wherein the polishing solution comprises a plurality of abrasive silica particles, at least some of said plurality of abrasive silica particles are functionalized with n- (trimethoxysilylpropyl)isothiouronium chloride; maintaining, by continuously applying substantially pure oxygen to said polishing solution, the pre-determined dissolved oxygen concentration of said polishing solution at or between approximately 8.6 mg / L and approximately 16.6 mg / L; disposing the polishing solution between a polishing pad and the surface; applying the polishing pad to the surface; and selectively removing a predetermined thickness of the target material; wherein varying the dissolved oxygen content of the polishing solution varies the removal ratio of target material to non-target material during the removal step.

[0014] US Patent 6,914,001 discloses s chemical mechanical polishing method comprising: contacting a surface of a semiconductor wafer with a surface of a polishing pad; supplying an aqueous solution containing abrasive particles, a removal rate accelerator, and different first and second passivation agents to an interface between the surface of the polishing pad and the surface of the semiconductor wafer, wherein the first passivation agent is an anionic, cationic or nonionic surfactant; and,rotating the surface of the semiconductor wafer relative to the surface of the polishing pad to remove an oxide material on the semiconductor wafer.

[0015] However, those prior disclosed Shallow Trench Isolation (STI) polishing compositions did not address the importance of oxide film removal rate tuning, SiN film removal rate tuning, oxide trench dishing reducing and more uniform oxide trench dishing on the polished patterned wafers along with the tunable oxide vs nitride selectivity.

[0016] Therefore, it should be readily apparent from the foregoing that there remains a need within the art for compositions, methods and systems of STI chemical mechanical polishing that can afford the tunable oxide film including HDP oxide film removal rates, the tunable SiN film removal rates and the reduced oxide trench dishing and more uniformed oxide trench dishing across various sized oxide trench features on polishing patterned wafers in a STI chemical and mechanical polishing (CMP) process.SUMMARY OF THE INVENTION

[0017] The present invention provides oxide CMP polishing compositions for the tunable oxide film and HDP oxide film removal rates and lower SiN film removal rates with the use of relative low concentrations of composite ceria abrasives, typically the composite ceria abrasives are ceria-coated inorganic oxide abrasives, the reduced SiN film removal rates and the tunable and higher TECS: SiN and HDP: SiN selectivity and the reduced oxide trench dishing on the polished patterned wafers.

[0018] The present invented oxide CMP polishing compositions provides tunable oxide including HDP oxide film vs nitride film selectivity by introducing dual types of chemical additives for tuning oxide and SiN film removal rates and reducing oxide trenching dishing in the chemical mechanical polishing (CMP) compositions for Shallow Trench Isolation (STI) CMP applications at wide pH range conditions.

[0019] The disclosed chemical mechanical polishing (CMP) compositions for Shallow Trench Isolation (STI) CMP applications have a unique combination of using ceria-coated inorganic oxide particles as abrasives and the suitable dual types of chemical additives as oxide film and nitride film removal rate tuning agents, and oxide trench dishing reducing agents.

[0020] In one aspect, there is provided a chemical mechanical polishing composition comprising: at least one ceria-coated inorganic oxide particles. at least one silicone-and-fluorine containing compound; at least one non-ionic organic molecule having more than one hydroxyl functional group; solvent; optionally at least one of a biocide; and a pH adjuster; wherein the composition has a pH of from 2 to 12, 3 to 10, 4 to 9, or 5 to 7.

[0021] In another aspect, there is provided a method of chemical mechanical polishing (CMP) a semiconductor substrate having at least one surface comprising a silicon oxide film, the method comprising the steps of: providing the semiconductor substrate; providing a polishing pad; providing the chemical mechanical polishing (CMP) composition comprising: at least one ceria-coated inorganic oxide particles; at least one silicone-and-fluorine containing compound; at least one non-ionic organic molecule having more than one hydroxyl functional group; solvent; optionally at least one of a biocide; and a pH adjuster; wherein the composition has a pH of from 2 to 12, 3 to 10, 4 to 9, or 5 to 7; contacting the surface of the semiconductor substrate with the polishing pad and the chemical mechanical polishing composition; and polishing the least one surface comprising silicon dioxide and stop on SiN film.

[0022] In yet another aspect, there is provided a system of chemical mechanical polishing (CMP) a semiconductor substrate having at least one surface comprising silicon oxide, the system comprising: a semiconductor substrate; the chemical mechanical polishing (CMP) composition comprising: at least one ceria-coated inorganic oxide particles; at least one silicone-and-fluorine containing compound; at least one non-ionic organic molecule having more than one hydroxyl functional group; solvent; and optionally at least one of a biocide; and a pH adjuster; wherein the composition has a pH of from 2 to 12, 3 to 10, 4 to 9, or 5 to 7; and a polishing pad; wherein the at least one surface comprising silicon oxide film is in contact with the polishing pad and the chemical mechanical polishing composition.

[0023] The first type of chemical additives is the silicon-and-fluorine containing compounds which contain both silicon atoms and fluorine atoms in the same molecules.

[0024] In one embodiment, the first type of chemical additives based on silicone- and-fluorine-containing compounds which is also called fluorinated silicone polyether having a general molecule structure of (1):wherein x, y and z can be the same or different, and each is independently ranged from 0 to 50, 0 to 40, 0 to 30, 0 to 20, 0 to 10, or 0 to 5;i is ranged from 0 to 8 or 1 to 6; n is ranged from 1 to 50, 1 to 40, 1 to 30, 1 to 20, 3 to 15, or 5 to 10; m is ranged from 1 to 10, 1 to 6, or 1 to 4;R and R groups on the site chains or terminals of the molecule can be the same or different, and each is independently selected from the group comprising of: hydrogen; -(CH2)gCH3 -NH2 group; -NH(CH2)q-NH2 group; ethylene oxide(EO), propylene oxide (PO) or combinations of EO and PO repeating groups: -(EO)d-OH, - (PO)e-OH, or -(EO)d-(PO)e-OH; -COOH; - R1COOH; -COOM with M being selected from sodium, potassium or ammonium; - R1COOM; -COO R1; - R1COOR2; -SO3H; - R1SO3H; -SO3M; phosphonic acid; phosphate salt selected from sodium, potassium or ammonium salts; aromatic group selected from sodium benzyl, di-benzyl or other aromatic moieties; wherein R1and R2each independently is -(CH2)qor -(CeH4)P; g ranges from 0 to 12 or 0 to 5; q ranges from 1 to 12 or 2 to 5; d and e each independently ranges from 1 to 50, 1 to 40, 1 to 30, 1 to 20, 1 to 10, or 1 to 5; q ranges from 1 to 12 or 2 to 5, p ranges from 1 to 4.

[0025] Examples of the silicone-and-fluorine-containing compounds as described in the general molecular structure (1) include but are not limited to:(1)(a) with i=2 in structure (1)(1) (b) with -R being methyl group, i = 2, m = 3, and -R - -(EO)d-OH:(1) (d) with x=0 and i=2 in structure (1)

[0026] The second type of chemical additives comprises at least one non-ionic organic molecule having more than one hydroxyl functional group.

[0027] The second type of chemical additive has a general molecular structure selected from the group consisting of (a), (b), (c), (d), (e), (f), and combinations thereof.

[0028] In one embodiment, the chemical additive has a general structure (a) as shown below:

[0029] In the general molecular structure (a), n is selected from 2 to 5,000, 3 to 12, or 4 to 6.

[0030] In these general molecular structures; 1, R2, and3groups can be the same or different atoms or functional groups.

[0031] R1, R2, and 3 can be independently selected from the group consisting of hydrogen, an alkyl group CnH2n+i, n is from 1 to 12, preferably 1 to 6, and more preferably 1 to 3; alkoxy, organic group with one or more hydroxyl groups, substituted organic sulfonic acid, substituted organic sulfonic acid salt, substituted organic carboxylic acid, substituted organic carboxylic acid salt, organic carboxylic ester, organic amine groups, and combinations thereof; wherein, at least two are hydrogen atoms.

[0032] In another embodiment, the chemical additive has a general structure (b) as shown below:

[0033] In structure (b), one -CHO functional group is located at one end of the molecule as the terminal functional group; n is selected from 2 to 5,000, 3 to 12, or 4 to 7.

[0034] Each of R1 and R2can be independently selected from the group consisting of hydrogen, alkyl, alkoxy, organic group with one or more hydroxyl groups, substituted organic sulfonic acid, substituted organic sulfonic acid salt, substituted organic carboxylic acid, substituted organic carboxylic acid salt, organic carboxylic ester, organic amine groups, and combinations thereof.

[0035] In yet another embodiment, the second chemical additive has a molecular structure selected from the group comprising of (c), (d), (e), and combinations thereof.

[0036] In these general molecular structures; R-i, R2, R3, R4, Rs, R@, R?, Rs, Rs, R10, R11, R12, R13, and RMcan be the same or different atoms or functional groups.

[0037] They can be independently selected from the group consisting of hydrogen, alkyl, alkoxy, organic group with one or more hydroxyl groups, substituted organic sulfonic acid, substituted organic sulfonic acid salt, substituted organiccarboxylic acid, substituted organic carboxylic acid salt, organic carboxylic ester, organic amine groups, and combinations thereof; wherein, at least two or more, preferably four or more of them are hydrogen atoms.

[0038] Yet, in another embodiment, the chemical additives contain at least one six- member ring structure motif ether bonded with at least one polyol molecular unit containing multiple hydroxyl functional groups in the molecular unit structures or at least one polyol molecular unit containing multiple hydroxyl functional groups in the molecular unit structures and at least one six-member ring polyol. A polyol is an organic compound containing hydroxyl groups.

[0039] The general molecular structure for the chemical additives is shown in (f):

[0040] In structure (f), at least one R in the group of Ri to R5in the general molecular structure (f) is a polyol molecular unit having a structure shown in (i):wherein n and m can be the same or different, m or n is independently selected from 1 to 5, preferably from 1 to 4, more preferably from 1 to 3, and most preferably from 1 to 2; R6to Rg can be the same or different atoms or functional groups; each of R6, R7, Ra, and Rgis independently selected from the group consisting of hydrogen, alkyl, alkoxy, organic group with one or more hydroxyl groups, substituted organic sulfonic acid, substituted organic sulfonic acid salt, substituted organic carboxylic acid,substituted organic carboxylic acid salt, organic carboxylic ester, organic amine, and combinations thereof; and at least two of them are hydrogen atoms; and the rest of each R in the group of Ri to R5can be independently selected from the group consisting of hydrogen, alkyl, alkoxy, organic group with one or more hydroxyl groups, substituted organic sulfonic acid or salt, substituted organic carboxylic acid or salt, organic carboxylic ester, organic amine, a six-member ring polyol having a structure shown in (ii):wherein the structure (ii) is connected through oxygen carbon bond to structure (f) by removing one R from Rn to RI4in (ii) and each of the rest R10 to RI4is independently selected from the group consisting of hydrogen, alkyl, alkoxy, organic group with one or more hydroxyl groups, substituted organic sulfonic acid or salt, substituted organic carboxylic acid or salt, organic carboxylic ester, organic amine, and combinations thereof; and combinations thereof.

[0041] In some embodiments, the general molecular structure (f) has at least two, at least four, or at least six of the Rs in the group of Ri to R9are hydrogen atoms. Thus, the chemical additives contain at least two, at least four, or at least six hydroxyl functional groups in their molecular structures.

[0042] Examples of the second chemical additives comprise maltitol, lactitol, maltotritol, ribitol, D-sorbitol, mannitol, dulcitol, iditol, D-(-)-Fructose, sorbitan, sucrose, ribose, Inositol, glucose, D-arabinose, L-arabinose, D-mannose, L- mannose, meso-erythritol, beta-lactose, arabinose, and combinations thereof. The preferred chemical additives are maltitol, lactitol, maltotritol, D-sorbitol, mannitol, dulcitol, iditol, D- (-)-Fructose, sucrose, ribose, Inositol, glucose. D-(+)-mannose, beta-lactose, and combinations thereof. The more preferred chemical additives aremaltitol, lactitol, maltotritol, D-sorbitol, mannitol, dulcitol, D-(-)-Fructose, beta-lactose, and combinations thereof.

[0043] Some examples of the second chemical additives are listed below:, and

[0044] The preferred second type chemical additives are D-sorbitol, Dulcitol, Maltitol, and Lactitol.

[0045] The polished oxide films can be Chemical vapor deposition (CVD), Plasma Enhance CVD (PECVD), High Density Plasma CVD Deposition (HDPCVD or HDP), or spin on oxide films.

[0046] The substrate disclosed above can further comprises a silicon nitride surface. The removal selectivity of SiO2: SiN is tunable depending on the relevant STI CMP application requirements.DETAILED DESCRIPTION OF THE INVENTION

[0047] In the global planarization of patterned STI structures, tuning oxide and SiN removal rates, reducing oxide trench dishing across various sized oxide trench features, tuning oxide film removal rates, and using relative low concentrations of ceria-coated inorganic oxide particles as abrasives are the key factors to be considered.

[0048] The lower trench oxide loss will prevent electrical current leaking between adjacent transistors. Non-uniform trench oxide loss across die (within die) will affect transistor performance and device fabrication yields. Severe trench oxide loss (high oxide trench dishing) will cause poor isolation of transistor resulting in device failure. Therefore, it is important to reduce trench oxide loss by reducing oxide trench dishing in STI CMP polishing compositions.

[0049] This invention relates to Chemical Mechanical Polishing (CMP) compositions using dual chemical additives and ceria-coated composite particles as abrasives for Shallow Trench Isolation (STI) CMP applications.

[0050] More specifically, the disclosed chemical mechanical polishing (CMP) composition for Shallow Trench Isolation (STI) CMP applications have a unique combination of using ceria-coated inorganic oxide abrasive particles and two types of chemical additives as dual chemical additives for oxide film removal rate tuning, oxide trench dishing reducing, and nitride removal rate tuning.

[0051] Dual chemical additives used in the same STI CMP polishing compositions provide the benefits of achieving desirable oxide film removal rates, tunable SiN film removal rates, and higher and tunable Oxide: SiN selectivity, reduced SiN film loss, and more importantly, providing significantly reduced oxide trench dishing and improving over polishing window stability on polishing patterned wafers.

[0052] In one aspect, there is provided a chemical mechanical polishing composition comprising: at least one ceria-coated inorganic oxide particles; at least one silicone-and-fluorine containing compound; at least one non-ionic organic molecule having more than one hydroxyl functional group; solvent; optionally at least one of a biocide; and a pH adjuster; wherein the composition has a pH of from 2 to 12, 3 to 10, or 4 to 9 or 5 to 7.

[0053] The ceria-coated inorganic oxide particles include, but are not limited to, ceria-coated colloidal silica, ceria-coated high purity colloidal silica, ceria-coated alumina, ceria-coated titania, ceria-coated zirconia, or any other ceria-coated inorganic oxide particles.

[0054] The particle sizes of these ceria-coated inorganic oxide particles in the disclosed invention herein are ranged from 10 nm to 1 ,000 nm, the preferred mean particle sized are ranged from 20 nm to 500 nm, the more preferred mean particle sizes are ranged from 50 nm to 250 nm.

[0055] In some embodiments, the concentrations of these ceria-coated inorganic oxide particles range from 0.01 wt.% to 20 wt.%, 0.05 wt.% to 10 wt.%, or from 0.1 wt.% to 5 wt.%.

[0056] In some other embodiments, the concentrations of these ceria-coated inorganic oxide particles range from 0.01 wt.% to 2 wt.%, 0.025 wt.% to 1 .0 wt.%, or from 0.05 wt.% to 0.5 wt.%.

[0057] The preferred ceria-coated inorganic oxide particles are ceria-coated silica particles. The ceria-coated silica particles have, silica particles as the core particles with nano-sized ceria particles being bounded to the surface of the core silica particles. The nano-sized ceria particles are smaller than the core silica particles.

[0058] The ceria-coated silica particles can be made with any methods, for example the methods as disclosed in WO2016159167.

[0059] The STI CMP composition contains 0.0001 wt.% to 2.0% wt.%, 0.001 wt.% to 1.0 wt.%, or 0.0025 wt.% to 0.25 wt.% of at least one silicone-and-fluorine containing compound as one of the dual types of chemical additives that functions primarily to tune oxide film removal rates and SiN film removal rates and to reduce oxide trenching dishing.

[0060] The STI CMP composition also contains from 0.001 wt.% to 2.0% wt.%, 0.0025 wt.% to 1 .0 wt.%, or 0.05 wt.% to 0.5 wt.% of at least one non-ionic organic molecule having more than one hydroxyl functional group as another type of chemical additives of the dual chemical additives that functions primarily as a SiN film removal rate and oxide film removal rate tuning agent and oxide trenching dishing reducers.

[0061] The first type of chemical additives comprises the silicone-and-fluorine containing compounds.

[0062] In one embodiment, the first type of chemical additives based on silicone- and-fluorine containing compounds having a general molecule structure of (1):wherein x, y and z can be the same or different, and each is independently ranged from 0 to 50, 0 to 40, 0 to 30, 0 to 20, 0 to 10, or 0 to 5; i is ranged from 0 to 8 or 1 to 6; n is ranged from 1 to 50, 1 to 40, 1 to 30, 1 to 20, 3 to 15, or 5 to 10; m is ranged from 1 to 10, 1 to 6, or 1 to 4;R and R groups on the site chains or terminals of the molecule can be the same or different, and each is independently selected from the group comprising of: hydrogen; -(CH2)gCH3 -NH2group; -NH(CH2)q-NH2group; ethylene oxide(EO), propylene oxide (PO) or combinations of EO and PO repeating groups: -(EO)d-OH, - (PO)e-OH, or -(EO)d-(PO)e-OH; -COOH; - R1COOH; -COOM with M being selected from sodium, potassium or ammonium; - R1COOM; -COO R1; - R1COOR2; -SO3H; - R1SOsH; -SO3M; phosphonic acid; phosphate salt selected from sodium, potassium or ammonium salts; aromatic group selected from sodium benzyl, di-benzyl or other aromatic moieties; wherein R1and R2each independently is -(CH2)qor -(C6H4)P; g ranges from 0 to 12 or 0 to 5; q ranges from 1 to 12 or 2 to 5; d and e each independently ranges from 1 to 50, 1 to 40, 1 to 30, 1 to 20, 1 to 10, or 1 to 5; q ranges from 1 to 12 or 2 to 5, p ranges from 1 to 4.

[0063] Examples of the silicone-and-fluorine-containing compounds as described in the general molecular structure (1) include but are not limited to:(1)(a) with i=2 in structure (1):(1)(b) with -R being methyl group, i=2, m = 3, and -R - -(EO)q-OH in structure (1):(1)(c) with x=y=z=1 , -R being methyl group, i=2, m = 3, n=8, and -R’= -(EO)d-OH with d=1 in structure (1):

[0064] The second type of chemical additives comprises at least one non-ionic organic molecule having more than one hydroxyl functional group.

[0065] The second types of chemical additive has a general molecular structure selected from the group consisting of (a), (b), (c), (d), (e), (f), and combinations thereof.

[0066] In one embodiment, the second type of chemical additive has a general structure (a) as shown below:

[0067] In the general molecular structure (a), n is selected from 2 to 5,000, 3 to12, or 4 to 6.

[0068] In these general molecular structures; Ri, R2, and R3 groups can be the same or different atoms or functional groups.

[0069] RT, R2, and R3can be independently selected from the group consisting of hydrogen, an alkyl group CnH2n+i, n is from 1 to 12, preferably 1 to 6, and more preferably 1 to 3; alkoxy, organic group with one or more hydroxyl groups, substituted organic sulfonic acid, substituted organic sulfonic acid salt, substituted organic carboxylic acid, substituted organic carboxylic acid salt, organic carboxylic ester, organic amine groups, and combinations thereof; wherein, at least two are hydrogen atoms.

[0070] In another embodiment, the chemical additive has a general structure (b) as shown below:

[0071] In this structure, one -CHO functional group is located at one end of the molecule as the terminal functional group; n is selected from 2 to 5,000, 3 to 12, or 4 to 7.

[0072] Each of Ri and R2can be independently selected from the group consisting of hydrogen, alkyl, alkoxy, organic group with one or more hydroxyl groups, substituted organic sulfonic acid, substituted organic sulfonic acid salt, substituted organic carboxylic acid, substituted organic carboxylic acid salt, organic carboxylic ester, organic amine groups, and combinations thereof.

[0073] In yet another embodiment, the second type of chemical additives has a molecular structure selected from the group comprising of structures of (c), (d), (e), and combinations thereof:

[0074] In these general molecular structures; R-i, R2, R3, R4, R5, Re, R7, Rs, Rg, R10, R11, R12, R13, and R14 can be the same or different atoms or functional groups.

[0075] They can be independently selected from the group consisting of hydrogen, alkyl, alkoxy, organic group with one or more hydroxyl groups, substituted organic sulfonic acid, substituted organic sulfonic acid salt, substituted organic carboxylic acid, substituted organic carboxylic acid salt, organic carboxylic ester, organic amine groups, and combinations thereof; wherein, at least two or more, preferably four or more of them are hydrogen atoms.

[0076] Yet, in another embodiment, the chemical additives contain at least one six- member ring structure motif ether bonded with at least one polyol molecular unit containing multiple hydroxyl functional groups in the molecular unit structures or at least one polyol molecular unit containing multiple hydroxyl functional groups in themolecular unit structures and at least one six-member ring polyol. A polyol is an organic compound containing hydroxyl groups.

[0077] The general molecular structure (f) for the chemical additives as shown below:(f).

[0078] In structure (f), at least one R in the group of Ri to R5in the general molecular structure (f) is a polyol molecular unit having a structure shown in (i):wherein n and m can be the same or different, m or n is independently selected from 1 to 5, preferably from 1 to 4, more preferably from 1 to 3, and most preferably from 1 to 2; R6to R9can be the same or different atoms or functional groups; each of R6, Ry, Ra, and R9is independently selected from the group consisting of hydrogen, alkyl, alkoxy, organic group with one or more hydroxyl groups, substituted organic sulfonic acid, substituted organic sulfonic acid salt, substituted organic carboxylic acid, substituted organic carboxylic acid salt, organic carboxylic ester, organic amine, and combinations thereof; and at least two of them are hydrogen atoms; and the rest of each R in the group of Ri to R5can be independently selected from the group consisting of hydrogen, alkyl, alkoxy, organic group with one or more hydroxyl groups, substituted organic sulfonic acid or salt, substituted organic carboxylic acid or salt, organic carboxylic ester, organic amine, a six-member ring polyol having a structure shown in (ii):(ii); wherein the structure (ii) is connected through oxygen carbon bond to structure (f) by removing one R from Rn to RMin (ii) and each of the rest R10 to RMis independently selected from the group consisting of hydrogen, alkyl, alkoxy, organic group with one or more hydroxyl groups, substituted organic sulfonic acid or salt, substituted organic carboxylic acid or salt, organic carboxylic ester, organic amine, and combinations thereof; and combinations thereof.

[0079] In some embodiments, the general molecular structure (f) has at least two, at least four, or at least six of the Rs in the group of R1 to R9are hydrogen atoms. Thus, the chemical additives contain at least two, at least four, or at least six hydroxyl functional groups in their molecular structures.

[0080] Examples of the second chemical additives comprise maltitol, lactitol, maltotritol, ribitol, D-sorbitol, mannitol, dulcitol, iditol, D-(-)-Fructose, sorbitan, sucrose, ribose, Inositol, glucose, D-arabinose, L-arabinose, D-mannose, L- mannose, meso-erythritol, beta-lactose, arabinose, and combinations thereof. The preferred chemical additives are maltitol, lactitol, maltotritol, D-sorbitol, mannitol, dulcitol, iditol, D- (-)-Fructose, sucrose, ribose, Inositol, glucose. D-(+)-mannose, beta-lactose, and combinations thereof. The more preferred chemical additives are maltitol, lactitol, maltotritol, D-sorbitol, mannitol, dulcitol, D-(-)-Fructose, beta-lactose, and combinations thereof.

[0081] Some examples of the second chemical additives are listed below:, dLactitol.

[0082] The preferred second type chemical additives are D-sorbitol, Dulcitol, Maltitol, and Lactitol.

[0083] The solvent includes but is not limited to deionized (DI) water, distilled water, and alcoholic organic solvents.

[0084] The preferred solvent is DI water.

[0085] The STI CMP composition may contain a biocide from 0.0001 wt.% to 0.05 wt.%; preferably from 0.0005 wt.% to 0.025 wt.%, and more preferably from 0.001 wt.% to 0.01 wt.%.

[0086] The biocide includes, but is not limited to, Kathon™, Kathon™ CG / ICP II, from Dupont / Dow Chemical Co. Bioban from Dupont / Dow Chemical Co. They have active ingredients of 5-chloro-2-methyl-4-isothiazolin-3-one and 2-methyl-4- isothiazolin-3-one.

[0087] The STI CMP composition may contain a pH adjusting agent.

[0088] An acidic or basic pH adjusting agent can be used to adjust the STI polishing compositions to the optimized pH value.

[0089] The acidic pH adjusting agents include, but are not limited to nitric acid, hydrochloric acid, sulfuric acid, phosphoric acid, other inorganic or organic acids, and mixtures thereof.

[0090] pH adjusting agents also include the basic pH adjusting agents, such as sodium hydride, potassium hydroxide, ammonium hydroxide, tetraalkyl ammonium hydroxide, organic quaternary ammonium hydroxide compounds, organic amines, and other chemical reagents that can be used to adjust pH towards the more alkaline direction.

[0091] The pH of the compositions is in the range of 2 to 12, 3 to 10, 4 to 9 or 5 to 7.

[0092] The STI CMP composition contains 0 wt.% to 1 wt.%, 0.01 wt.% to 0.5 wt.%, or 0.1 wt.% to 0.25 wt.% pH adjusting agent.

[0093] In another aspect, there is provided a pH adjusting agents also include the basic pH adjusting agents, such as sodium hydride, potassium hydroxide, ammonium hydroxide, tetraalkyl ammonium hydroxide, organic quaternary ammonium hydroxide compounds, organic amines, and other chemical reagents that can be used to adjust pH towards the more alkaline direction.

[0094] The method of chemical mechanical polishing (CMP) a substrate having at least one surface comprising silicon dioxide using the chemical mechanical polishing (CMP) composition described above in Shallow Trench Isolation (STI) process.

[0095] In yet another aspect, there is provided a system of chemical mechanical polishing (CMP) a substrate having at least one surface comprising silicon dioxide using the chemical mechanical polishing (CMP) composition described above in Shallow Trench Isolation (STI) process.

[0096] The polished oxide films can be Chemical Vapor Deposition (CVD), Plasma Enhance CVD (PECVD), High Density Plasma Deposition CVD(HDP), or spin on oxide films.

[0097] The substrate disclosed above can further comprises a silicon nitride surface. The removal selectivity of SiO2: SiN is tunable depending on the STI CMP application requirements.

[0098] The following non-limiting examples are presented to further illustrate the present invention.EXAMPLESCMP Methodology

[0099] In the examples presented below, CMP experiments were run using the procedures and experimental conditions given below.GLOSSARY / COMPONENTS

[0100] Ceria-coated Silica: used as abrasive having a particle size of approximately 20 nanometers (nm) to 500 nanometers (nm);

[0101] Ceria-coated Silica particles (with varied sizes) were supplied by JGCC Inc. in Japan.

[0102] The first type of chemical additives of silicone-and-fluorine-containing compounds are Fluorosil® 2010, and Fluorosil® 2110 which were supplied by Siltech Corporation located

[0103] The second type of chemical additives, maltitol, D-Fructose, Dulcitol, D- sorbitol and other chemical raw materials were supplied by Sigma-Aldrich, St. Louis, MO, or supplied by Evonik Industries in Allentown, PA.

[0104] TEOS: tetraethyl orthosilicate

[0105] Polishing Pad: Polishing pad, IC1010 and other pads were used during CMP, supplied by DOW, Inc.PARAMETERSGeneral

[0106] A or A: angstrom(s) - a unit of length

[0107] BP: back pressure, in psi units

[0108] CMP: chemical mechanical planarization = chemical mechanical polishing

[0109] CS: carrier speed

[0110] DF: Down force: pressure applied during CMP, units psi

[0111] min: minute(s)

[0112] ml: milliliter(s)

[0113] mV: millivolt(s)

[0114] psi: pounds per square inch

[0115] PS: platen rotational speed of polishing tool, in rpm (revolution(s) per minute)

[0116] SF: composition flow, ml / min

[0117] Wt. %: weight percentage (of a listed component)

[0118] TECS: SiN Selectivity: (removal rate of TEOS) / (removal rate of SiN)

[0119] HDP: high density plasma deposited TEOS

[0120] TEOS or HDP Removal Rates: Measured TEOS or HDP removal rate at a given down pressure. The down pressure of the CMP tool was 3.1 psi in the examples listed below.

[0121] SiN Removal Rates: Measured SiN removal rate at a given down pressure. The down pressure of the CMP tool was 3.1 psi in the examples listed below.Metrology

[0122] Films were measured with a ResMap CDE, model 168, manufactured by Creative Design Engineering, Inc, 20565 Alves Dr., Cupertino, CA, 95014. The ResMap tool is a four-point probe sheet resistance tool. Forty-nine-point diameter scan at 5mm edge exclusion for film was taken.CMP Tool

[0123] The CMP tool that was used is a 200mm Mirra manufactured by Applied Materials, 3050 Boweres Avenue, Santa Clara, California, 95054. An IC1010 pad supplied by DOW, Inc, 451 Bellevue Rd., Newark, DE 19713 was used on platen 1 for blanket and pattern wafer studies.

[0124] The IC1010 pad was broken in by conditioning the pad for 18 mins. At 7 lbs. down force on the conditioner. To qualify the tool settings and the pad break-in two tungsten monitors and two TEOS monitors were polished with Versum® STI2305 composition, supplied by Versum Materials Inc. at baseline conditions.Wafers

[0125] Polishing experiments were conducted using PECVD or LECVD or HDP TEOS wafers. These blanket wafers were purchased from Silicon Valley Microelectronics, 2985 Kifer Rd., Santa Clara, CA 95051 .Polishing Experiments

[0126] In blanket wafer studies, oxide blanket wafers, and SiN blanket wafers were polished at baseline conditions. The tool baseline conditions were: table speed; 93 rpm, head speed: 87 rpm, membrane pressure; 3.1 psi DF, slurry flow rate: 200 ml / min.

[0127] The composition was used in polishing experiments on patterned wafers (MIT860), supplied by SWK Associates, Inc. 2920 Scott Blvd. Santa Clara, CA 95054). These wafers were measured on the Veeco VX300 profiler / AFM instrument. The two different sized pitch structures were used for oxide dishing measurement. The wafer was measured at center, middle, and edge die positions.

[0128] TEOS: SiN Selectivity: (removal rate of TEOS) / (removal rate of SiN) obtained from the STI CMP polishing compositions were tunable.

[0129] HDP: SiN Selectivity: (removal rate of TEOS) / (removal rate of SiN) obtained from the STI CMP polishing compositions were tunable.Example 1

[0130] The Reference 1 sample was made using 0.2 wt.% ceria-coated silica, a biocide ranging from 0.0001 wt.% to 0.05 wt.%, and deionized water with pH adjusted to 5.35.

[0131] The Reference 2 sample was made using 0.2 wt.% ceria-coated silica, a biocide ranging from 0.0001 wt.% to 0.05 wt.%, 0.28 wt.% maltitol and deionized water with pH adjusted to 5.35.

[0132] The Reference 3 sample was made using 0.2 wt.% ceria-coated silica, a biocide ranging from 0.0001 wt.% to 0.05 wt.%, 0.02 wt.% Fluorosil® 2010 and deionized water with pH adjusted to 5.35.

[0133] The Reference 4 sample was made using 0.2 wt.% ceria-coated silica, a biocide ranging from 0.0001 wt.% to 0.05 wt.%, 0.02 wt.% fluorosil 2110 and deionized water with pH adjusted to 5.35.

[0134] The working sample 1 with dual chemical additives was made using 0.2 wt.% ceria-coated silica, a biocide ranging from 0.0001 wt.% to 0.05 wt.%, 0.28 wt.% maltitol, 0.02 wt.% Fluorosil® 2010 and deionized water with pH adjusted to 5.35.

[0135] The working sample 2 with dual chemical additives was made using 0.2 wt.% ceria-coated silica, a biocide ranging from 0.0001 wt.% to 0.05 wt.%, 0.28 wt.% maltitol, 0.02 wt.% Fluorosil® 2110 and deionized water with pH adjusted to 5.35.

[0136] The removal rates (RR at A / min) for different films were evaluated. The results of the film removal rates and the selectivity among the different polished films were listed in Table 1.Table 1 . Effects of dual chemical additives on film RR (A / min.) & HDP: SiN orTEOS: SiN Selectivity

[0137] The effects of the addition of maltitol at 0.28 wt.% into the reference one sample with 0.20 wt.% ceria coated silica abrasives provided the suppressed SiN removal rate and increased HDP: SiN and TEOS: SiN selectivity from 4 to 1 , 6 to 1 to 35 to 1 and 36 to 1 , respectively.

[0138] The effects of the addition of fluorosil 2010 at 0.02 wt.% into the reference one sample with 0.20 wt.% ceria coated silica abrasives provided the suppressed SiN removal rate and increased HDP: SiN and TEOS: SiN selectivity from 4 to 1 , 6 to 1 to 13 to 1 and 19 to 1 , respectively.

[0139] The effects of the addition of Fluorosil 2110® at 0.02 wt.% into the reference one sample with 0.20 wt.% ceria coated silica abrasives provided the suppressed SiN removal rate and increased HDP: SiN and TEOS: SiN selectivity from 4 to 1 , 6 to 1 to 9 to 1 and 12 to 1 , respectively.

[0140] With the addition of the dual types of chemical additives, 0.28 wt.% maltitol and 0.02 wt.% Fluorosil® 2010 into the reference 1 sample with 0.2 wt.% ceria coated silica abrasives, the SiN removal rates was significantly suppressed while comparing the SiN removal rates obtained from reference 1 sample without using any chemical additive, reference 2, reference 3, or reference 4 sample only used the single and one type of chemical additive. Th HDP: SiN and TEOS: SiN selectivity were increased from 4 to 1 , 6 to 1 for reference one sample to 104 to 1 and 105 to 1 , respectively for the dual chemical additives based polishing composition.

[0141] With the addition of the dual type of chemical additives, 0.28 wt.% maltitol and 0.02 wt.% Fluorosil® 2110 into the reference 1 sample with 0.2 wt.% ceria coated silica abrasives, the SiN removal rates was significantly suppressed while comparing the SiN removal rates obtained from reference 1 sample without using any chemical additive, reference 2, reference 3, or reference 4 sample only used the single and one type of chemical additive. Th HDP: SiN and TEOS: SiN selectivity wereincreased from 4 to 1 , 6 to 1 for reference one sample to 94 to 1 and 94 to 1 , respectively for the dual chemical additives based polishing composition.Example 2

[0142] In Example 2, the same polishing compositions used in Example 3 were used for oxide patterned wafer polishing. The results of 100pm and 200pm oxide trench dishing vs over polishing times obtained from reference samples either using the ceria coated silica abrasives only or using ceria coated silica abrasives plus using one single type of chemical additive vs the working examples using ceria coated silica abrasives plus using the dual types of chemical additives were shown in Table 2.Table 2. Effects of Dual Additive Polishing Compositions on Oxide Trench Dishing (A) vs OP Times (Sec.)

[0143] As the results of the oxide trench dishing vs the over polishing times (OP Times) shown in Table 2, the addition of maltitol as the single type of chemical additive at 0.28 wt.% into the reference 1 sample with 0.20 wt.% ceria coated silica abrasives provided the reduced oxide trench dishing vs over polishing times on both 100pm and 200pm features vs the oxide trench dishing vs over polishing times obtained from reference 1 sample using the ceria coated silica abrasives only.

[0144] As the results of the oxide trench dishing vs the over polishing times (OP Times) shown in Table 6, the addition of Fluorosil® 2010 as another single type ofchemical additive at 0.02 wt.% into the reference 1 sample with 0.20 wt.% ceria coated silica abrasives provided the reduced oxide trench dishing vs over polishing times on both 100pm and 200pm features vs the oxide trench dishing vs over polishing times obtained from reference 1 sample using the ceria coated silica abrasives only.

[0145] As the results of the oxide trench dishing vs the over polishing times (OP Times) shown in Table 6, the addition of Fluorosil® 2110 as another single type of chemical additive at 0.02 wt.% into the reference 1 sample with 0.20 wt.% ceria coated silica abrasives provided the reduced oxide trench dishing vs over polishing times on both 100pm and 200pm features vs the oxide trench dishing vs over polishing times obtained from reference 1 sample using the ceria coated silica abrasives only.

[0146] With the addition of the dual types of chemical additives, 0.28 wt.% maltitol and 0.02 wt.% Fluorosil® 2010, into the reference 1 sample with 0.2 wt.% ceria coated silica abrasives, the oxide trench dishing vs over polishing times at different sized oxide trenches were further reduced while comparing the oxide trench dishing vs over polishing times at different sized oxide trenches obtained from reference 1 sample without using any chemical additive, reference 2, reference 3, or reference 4 sample only used the single and one type of chemical additive.

[0147] With the addition of the dual types of chemical additives, 0.28 wt.% maltitol and 0.02 wt.% Fluorosil® 2110, into the reference 1 sample with 0.2 wt.% ceria coated silica abrasives, the oxide trench dishing vs over polishing times at different sized oxide trenches were further reduced while comparing the oxide trench dishing vs over polishing times at different sized oxide trenches obtained from reference 1 sample without using any chemical additive, reference 2, reference 3, or reference 4 sample only used the single and one type of chemical additive.

[0148] The results of the effects of dual types of chemical additives plus the ceria coated silica abrasives based polishing compositions on the oxide dishing rates vs the results obtained from reference 1 sample only used ceria coated silica abrasives or other reference samples using ceria coated silica abrasives plus using a single type of chemical additive respectively were listed in Table 3.Table 3. Effects of Dual Additives at pH 5.35 on Oxide Trench Dishing Rate

[0149] As the results of the oxide dishing rates shown in Table 3, the addition of maltitol as the single type of chemical additive at 0.28 wt.% into the reference 1 sample with 0.20 wt.% ceria coated silica abrasives provided the reduced oxide trench dishing rates on both 100pm and 200pm features vs the oxide trench dishing rates obtained from reference 1 sample using the ceria coated silica abrasives only.

[0150] As the results of the oxide dishing rates shown in Table 3, the addition of fluorosil 2010 as another single type of chemical additive at 0.02 wt.% into the reference 1 sample with 0.20 wt.% ceria coated silica abrasives provided the reduced oxide trench dishing rates on both 100pm and 200pm features vs the oxide trench dishing rates obtained from reference 1 sample using the ceria coated silica abrasives only.

[0151] As the results of the oxide dishing rates shown in Table 3, the addition of Fluorosil® 2110 as another single type of chemical additive at 0.02 wt.% into the reference 1 sample with 0.20 wt.% ceria coated silica abrasives provided the reduced oxide trench dishing rates on both 100pm and 200pm features vs the oxide trench dishing rates obtained from reference 1 sample using the ceria coated silica abrasives only.

[0152] With the addition of the dual types of chemical additives, 0.28 wt.% maltitol and 0.02 wt.% Fluorosil® 2010, into the reference 1 sample with 0.2 wt.% ceria coated silica abrasives, the oxide trench dishing rates at different sized oxidetrenches were further reduced while comparing the oxide trench dishing rates at different sized oxide trench dishing rates obtained from reference 1 sample without using any chemical additive, reference 2, reference 3, or reference 4 sample only used the single and one type of chemical additive.

[0153] With the addition of the dual types of chemical additives, 0.28 wt.% maltitol and 0.02 wt.% Fluorosil® 2110, into the reference 1 sample with 0.2 wt.% ceria coated silica abrasives, the oxide trench dishing rates at different sized oxide trenches were further reduced while comparing the oxide trench dishing rates at different sized oxide trenches obtained from reference 1 sample without using any chemical additive, reference 2, reference 3, or reference 4 sample only used the single and one type of chemical additive.

[0154] The results of the effects of dual types of chemical additives plus the ceria coated silica abrasives based polishing compositions on the oxide trench loss rates vs the results obtained from reference 1 sample only used ceria coated silica abrasives or other reference samples using ceria coated silica abrasives plus using a single type of chemical additive respectively were listed in Table 4.Table 4. Effects of Dual Additives at pH 5.35 on Oxide Trench Loss Rate

[0155] As the results of the oxide trench loss rates shown in Table 4, the addition of maltitol as the single type of chemical additive at 0.28 wt.% into the reference 1 sample with 0.20 wt.% ceria coated silica abrasives provided the reducedoxide trench loss rates on both 100pm and 200pm features vs the oxide trench loss rates obtained from reference 1 sample using the ceria coated silica abrasives only.

[0156] As the results of the oxide trench loss rates shown in Table 4, the addition of fluorosil 2010 as another single type of chemical additive at 0.02 wt.% into the reference 1 sample with 0.20 wt.% ceria coated silica abrasives provided the reduced oxide trench loss rates on both 100pm and 200pm features vs the oxide trench loss rates obtained from reference 1 sample using the ceria coated silica abrasives only.

[0157] As the results of the oxide trench loss rates shown in Table 4, the addition of Fluorosil® 2110 as another single type of chemical additive at 0.02 wt.% into the reference 1 sample with 0.20 wt.% ceria coated silica abrasives provided the reduced oxide trench loss rates on both 100pm and 200pm features vs the oxide trench loss rates obtained from reference 1 sample using the ceria coated silica abrasives only.

[0158] With the addition of the dual types of chemical additives, 0.28 wt.% maltitol and 0.02 wt.% Fluorosil® 2010, into the reference 1 sample with 0.2 wt.% ceria coated silica abrasives, the oxide trench loss rates at different sized oxide trenches were further reduced while comparing the oxide trench loss rates at different sized oxide trenches obtained from reference 1 sample without using any chemical additive, reference 2, reference 3, or reference 4 sample only used the single and one type of chemical additive.

[0159] With the addition of the dual types of chemical additives, 0.28 wt.% maltitol and 0.02 wt.% Fluorosil® 2110, into the reference 1 sample with 0.2 wt.% ceria coated silica abrasives, the oxide trench loss rates at different sized oxide trenches were further reduced while comparing the oxide trench loss rates at different sized oxide trenches obtained from reference 1 sample without using any chemical additive, reference 2, reference 3, or reference 4 sample only used the single and one type of chemical additive.

[0160] The embodiments of this invention listed above, including the working example, are exemplary of numerous embodiments that may be made of this invention. It is contemplated that numerous other configurations of the process may be used, and the materials used in the process may be elected from numerous materials other than those specifically disclosed.

Claims

CLAIMS1 . A chemical mechanical polishing composition comprising: at least one ceria-coated inorganic oxide particles; at least one silicone-and-fluorine containing compound; at least one non-ionic organic molecule having more than one hydroxyl functional group; solvent; and optionally at least one of , a biocide; and pH adjuster, wherein the composition has a pH of from 2 to 12, 3 to 10, 4 to 9, or 5 to 7.

2. The chemical mechanical polishing composition of claim 1 , wherein the ceria- coated inorganic metal oxide particles are at least one selected from the group consisting of ceria-coated colloidal silica, ceria-coated alumina, ceria-coated titania, ceria- coated zirconia particles and combinations thereof, wherein the particles are present in the composition at range selected from the group consisting of from 0.01 wt.% to 20 wt.%., from 0.025 wt.% to 10 wt.%, and from 0.05 wt.% to 5 wt.%.

3. The chemical mechanical polishing composition according to any one of claims1 to 2, wherein the at least one silicone-and-fluorine containing compound has a general molecular structure of (1):wherein x, y and z can be the same or different, and each is independently ranged from 0 to 50, 0 to 40, 0 to 30, 0 to 20, 0 to 10, or 0 to 5; i is ranged from 1 to 8 or 1 to 4; n is ranged from 1 to 50, 1 to 40, 1 to 30, 1 to 20,3 to 15, or 5 to 10; m is ranged from 1 to 10, 1 to 6, or 1 to 4;R and R groups on the site chains or terminals of the molecule can be the same or different, and each is independently selected from the group comprising of: hydrogen; -(CH2)gCH3-NH2group; -NH(CH2)q-NH2group; ethylene oxide(EO), propylene oxide (PO) or combinations of EO and PO repeating groups: -(EO)d-OH, - (PO)e-OH, or -(EO)d-(PO)e-OH; -COOH; - R1COOH; -COOM with M being selected from sodium, potassium or ammonium; - R1COOM; -COO R1; - R1COOR2; -SO3H; - R1SO3H; -SO3M; phosphonic acid; phosphate salt selected from sodium, potassium or ammonium salts; aromatic group selected from sodium benzyl, di-benzyl or other aromatic moieties; wherein R1and R2each independently is -(CH2)qor -(C6H4)P; g ranges from 0 to 12 or 0 to 5; q ranges from 1 to 12 or 2 to 5; d and e each independently ranges from 1 to 50, 1 to 40, 1 to 30, 1 to 20, 1 to 10, or 1 to 5; q ranges from 1 to 12 or 2 to 5, p ranges from 1 to 4.

4. The chemical mechanical polishing composition according to any one of claims 1 to 3, wherein the at least one silicone-and-fluorine compound has molecular structure (1) (a) when i = 2 in the molecular structure (1):

5. The chemical mechanical polishing composition according to any one of claims 1 to 4, wherein the at least one silicone-and-fluorine compound has molecular structure (1) (b) when i = 2 , -R is a methyl group, m = 3, and -R’= -(EO)d-OH in the molecular structure (1):(1)(b).

6. The chemical mechanical polishing composition according to any one of claims 1 to 5, wherein the at least one silicone-and-fluorine has molecular structure (1) (c) when x=y=z=1 , i = 2, -R is a methyl group, m = 3, and -R’= -(EO)d-OH with d=1 in the molecular structure (1):

7. The chemical mechanical polishing composition according to any one of claims1 to 4, wherein the at least one silicone-and-fluorine has molecular structure (1) (d) when x=0 and i = 2 in the molecular structure (1):

8. The chemical mechanical polishing composition according to any one of claims 1 to 7, wherein the at least one silicone-and-fluorine containing compound is present in the composition at a concentration selected from the group consisting of from 0.0001 wt.% to 2.0% wt.%, from 0.001 wt.% to 1.0 wt.%, and from 0.0025 wt.% to 0.25 wt.%.

9. The chemical mechanical polishing composition according to any one of claims1 to 8, wherein the at least one non-ionic organic molecule having more than one hydroxyl functional group has a general molecular structure selected from a group comprising:(a)wherein n is selected from 2 to 5,000, 3 to 12, or 4 to 6; R1, R2, and R3 groups can be the same or different and are independently selected from the group consisting of hydrogen, an alkyl group CnH2n+i, n is from 1 to 12, 1 to 6, or 1 to 3; alkoxy; organic group with one or more hydroxyl groups; substituted organic sulfonic acid; substituted organic sulfonic acid salt; substituted organic carboxylic acid; substituted organic carboxylic acid salt; organic carboxylic ester; organic amine groups; and combinations thereof; wherein, at least two are hydrogen atoms;wherein n is selected from 2 to 5,000, 3 to 12, or 4 to 7; Each of R1 and R2can be independently selected from the group consisting of hydrogen, alkyl, alkoxy, organic group with one or more hydroxyl groups, substituted organic sulfonic acid, substituted organic sulfonic acid salt, substituted organic carboxylic acid, substituted organic carboxylic acid salt, organic carboxylic ester, organic amine groups, and combinations thereof;(c)wherein Ri, R2, R3, R4, and R5can be the same or different and can be independently selected from the group consisting of hydrogen, alkyl, alkoxy, organic group with one or more hydroxyl groups, substituted organic sulfonic acid, substituted organic sulfonic acid salt, substituted organic carboxylic acid, substituted organic carboxylic acid salt, organic carboxylic ester, organic amine groups, and combinations thereof; wherein, at least two or more, preferably four or more of them are hydrogen atoms:wherein R6, R7, and R8can be the same or different and can be independently selected from the group consisting of hydrogen, alkyl, alkoxy, organic group with one or more hydroxyl groups, substituted organic sulfonic acid, substituted organic sulfonic acid salt, substituted organic carboxylic acid, substituted organic carboxylic acid salt, organic carboxylic ester, organic amine groups, and combinations thereof; wherein, at least two or more, preferably four or more of them are hydrogen atoms;(e)wherein R9, R10, Rn , R12, R13, and R14 can be the same or different and can be independently selected from the group consisting of hydrogen, alkyl, alkoxy, organic group with one or more hydroxyl groups, substituted organic sulfonic acid, substituted organic sulfonic acid salt, substituted organic carboxylic acid, substituted organic carboxylic acid salt, organic carboxylic ester, organic amine groups, and combinations thereof; wherein, at least two or more, preferably four or more of them are hydrogen atoms;(f)wherein at least one R in the group of Ri to R5in the general molecular structure (f) is a polyol molecular unit having a structure shown in (i):wherein n and m can be the same or different and is independently selected from 1 to 5, 1 to 4, 1 to 3, or 1 to 2; R6to Rg can be the same or different and are independently selected from the group consisting of hydrogen, alkyl, alkoxy, organic group with one or more hydroxyl groups, substituted organic sulfonic acid, substituted organic sulfonic acid salt, substituted organic carboxylic acid, substituted organic carboxylic acid salt, organic carboxylic ester, organic amine, and combinations thereof; and at least two of them are hydrogen atoms; and the rest of each R in the group of Ri to Rs can be independently selected from the group consisting of hydrogen, alkyl, alkoxy, organic group with one or more hydroxyl groups, substituted organic sulfonic acid or salt, substituted organic carboxylic acid or salt, organic carboxylic ester, organic amine, a six-member ring polyol having a structure shown in (ii):(ii); wherein the structure (ii) is connected through oxygen carbon bond in structure (f) by removing one R from Rn to RI4in (ii) and each of the rest Rwto RI4is independently selected from the group consisting of hydrogen, alkyl, alkoxy, organic group with one or more hydroxyl groups, substituted organic sulfonic acid or salt, substituted organic carboxylic acid or salt, organic carboxylic ester, organic amine, and combinations thereof;(g) combinations thereof; and the non-ionic organic molecule has a concentration range selected from the group consisting of from 0.001 wt.% to 2.0% wt.%, from 0.0025 wt.% to 1.0 wt.%, and from 0.05 wt.% to 0.5 wt.%.

10. The chemical mechanical polishing composition according to any one of claims 1 to 9, wherein the at least one non-ionic organic molecule having more than one hydroxyl functional group has a general molecular structure (a) wherein R-i, R2, R3and R4are all hydrogen atoms, and the at least one non-ionic organic molecule is:Dulcitol.11 . The chemical mechanical polishing composition according to any one of claims1 to 9, wherein the at least one non-ionic organic molecule having more than one hydroxyl functional group has a general molecular structure (b) wherein Ri, R2, R3, R4, Rs, Re, and R? are all hydrogen atoms and the at least one non-ionic organic molecule is:

12. The chemical mechanical polishing composition according to any one of claims 1 to 11 , wherein the pH is from 3 to 10.

13. The chemical mechanical polishing composition according to any one of claims 1 to 12, wherein the pH is from 4 to 9.

14. The chemical mechanical polishing composition according to any one of claims 1 to 13 wherein the pH is from 5 to 7.

15. The chemical mechanical polishing composition according to any one of claims 1 to 14, wherein the solvent is selected from the group consisting of deionized (DI) water, distilled water, and an alcohol-containing organic solvent.

16. The chemical mechanical polishing composition according to any one of claims 1 to 15, wherein the composition further comprises from 0.0001 wt.% to 0.05 wt.% of the biocide, wherein the biocide comprises 5-chloro-2-methyl-4- isothiazolin-3-one and 2-methyl- -isothiazolin-3-one.

17. The chemical mechanical polishing composition according to any one of claims 1 to 16, wherein the composition further comprises from 0 wt.% to 1 wt.% of the pH adjusting agent wherein the pH adjusting agent is selected from the group consisting of nitric acid, hydrochloric acid, sulfuric acid, phosphoric acid, other inorganic or organic acids, and mixtures thereof for acidic pH conditions; or selected from the group consisting of sodium hydride, potassium hydroxide, ammonium hydroxide, tetraalkyl ammonium hydroxide, organic quaternary ammonium hydroxide compounds, organic amines, and combinations thereof for alkaline pH conditions.

18. The chemical mechanical polishing composition according to claims 1 to 17, wherein the at least one ceria-coated inorganic oxide particles are ceria-coated colloidal silica; the at least one non-ionic organic molecule having more than one hydroxyl functional group is selected from the group consisting of Dulcitol, D-sorbitol, Maltitol, Lactitol, and combinations thereof; and the pH is from 4 to 9 or 5 to 7.

19. The chemical mechanical polishing composition according to claims 1 to 5, comprising ceria-coated colloidal silica,the at least one silicone-and-fluorine containing compound has a molecular structure (1) (a) when -R is a methyl group, i = 2, m = 3, and -R - -(EO)d-OH in the molecular structure (1):(I)(b); at least one non-ionic organic molecule having more than one hydroxyl functional group is selected from the group consisting of Dulcitol, D-sorbitol, Maltitol, Lactitol, and combinations thereof; and the pH is from 4 to 9 or from 5 to 7.

20. The chemical mechanical polishing composition according to claims 1 to 3, comprising ceria-coated colloidal silica, the at least one silicone-and-fluorine containing compound has a molecular structure (1)(c) with x=y=z=1 , -R being methyl group, i=2, m = 3, n=8, and -R’= - (EO)d-OH with d=1 in the molecular structure (1):at least one non-ionic organic molecule having more than one hydroxyl functional group is selected from the group consisting of Dulcitol, D-sorbitol, Maltitol, Lactitol, and combinations thereof; and the pH is from 4 to 9 or from 5 to 7.

21. The chemical mechanical polishing composition according to claims 1 to 3, comprising ceria-coated colloidal silica, the at least one silicone-and-fluorine containing compound has a molecular structure (1)(d) with x=0 and i=2 in the molecular structure (1):at least one non-ionic organic molecule having more than one hydroxyl functional group is selected from the group consisting of Dulcitol, D-sorbitol, Maltitol, Lactitol, and combinations thereof; and the pH is from 4 to 9 or from 5 to 7.

22. A method of chemical mechanical polishing (CMP) a semiconductor substrate having at least one surface comprising a silicon oxide film, the method comprising the steps of: providing the semiconductor substrate; providing a polishing pad; providing the chemical mechanical polishing (CMP) composition in any one of claims 1 to 21 ;contacting the surface of the semiconductor substrate with the polishing pad and the chemical mechanical polishing composition; and polishing the least one surface comprising silicon dioxide.

23. The method of claim 22, wherein the silicon oxide film is high density plasma deposited tetraethyl orthosilicate(TEOS) (HDP) film.

24. The method according to any one of claims 22 to 23, wherein the semiconductor substrate further comprises a silicon nitride (SiN) surface.

25. The method according to any one of claims 22 to 24, wherein the silicon oxide film is high density plasma deposited tetraethyl orthosilicate(TEOS) (HDP) film; the semiconductor substrate further comprises a silicon nitride surface; and removal rate of HDP I removal rate of SiN is > 70, 80, 90, 100, 110, or 120.

26. A system of chemical mechanical polishing (CMP) a semiconductor substrate having at least one surface comprising silicon oxide, the system comprising: a. a semiconductor substrate; b. the chemical mechanical polishing (CMP) composition in any one of claims 1 to 21 ; c. a polishing pad, wherein the at least one surface comprising silicon oxide film is in contact with the polishing pad and the chemical mechanical polishing composition.

27. The system of claim 26; wherein the silicon oxide film is high density plasma deposited tetraethyl orthosilicate(TEOS) (HDP) film.

28. The system according to any one of claims 26 to 27; wherein the semiconductor substrate further comprises a silicon nitride surface.

29. The system according to any one of claims 26 to 28; wherein the silicon oxide film is high density plasma deposited tetraethyl orthosilicate(TEOS) (HDP) film; thesemiconductor substrate further comprises a silicon nitride surface; and removal rate of HDP / removal rate of SiN is > 70, 80, 90, 100, 110, or 120.

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