Laser processing method for metal thin film wire rod

Abstract

A laser processing method for a metal thin film wire rod according to the present invention comprises: a wire rod preparation step for preparing a metal thin film wire rod to be processed so that the wire rod can be conveyed in a certain direction; a splitting path setting step for setting a laser splitting path for the wire rod prepared in the wire rod preparation step; an optical system arrangement step for arranging an optical system for forming a laser beam oscillation path above and below the metal thin film wire rod, prepared in the wire rod preparation step, so as to correspond to the splitting path set in the splitting path setting step; and a laser processing step for processing the prepared metal thin film wire rod while conveying the wire rod along the laser beam oscillation path formed through the optical system arrangement step. A laser oscillator for emitting a laser beam for irradiating the prepared wire rod; a beam splitter for splitting the emitted laser beam; a mirror for guiding the laser beams, split by the beam splitter, above and below the prepared wire rod; and a condensing lens for focusing the laser beams, guided by the mirror, so that the laser beams form confocal points above and below the wire rod are arranged in the optical system arrangement step. In the laser processing step, the metal thin film wire rod is simultaneously processed in both directions from above and below by the optical system arranged as described above. According to the present invention, bi-directional processing is achieved by splitting a single laser beam, and thus control is convenient, processing time is reduced, and productivity can be enhanced.

Description

Laser processing method for metal thin film wire

[0001] The present invention relates to a method for laser processing of a metal thin film wire for processing the metal thin film wire using a laser.

[0002]

[0003] Metal thin film wire rod is formed into a tape shape of a certain thickness and is used by thinning it to suit the application, etc., and is generally cut using a rotary knife such as a gang slitter knife.

[0004] However, the gang slitter knife method as described above has the problem of causing cracks and burrs to occur on the cut surface of the metal thin film wire.

[0005] As an example, FIG. 1 shows a drawing showing the formation of cracks (a) and burrs (b) in the cut surface of a superconducting wire using a conventional gang slitter knife.

[0006] Referring to this, during the process in which the gang slitter knife comes into contact with the superconducting wire and etching takes place, cracks such as in Fig. 1(a) or burrs such as in Fig. 1(b) are formed on the substrate of the superconducting wire and the multiple functional layers constituting the superconducting wire.

[0007] Additionally, cracks or burrs formed in this way have the problem of causing stripping or insulation breakdown of the wire.

[0008] Meanwhile, as a solution to the above-mentioned problems of the gang slitter knife, processing of superconducting wires using lasers is being carried out.

[0009] As an example, FIG. 2 is a drawing showing a laser cutting process for thinning a superconducting wire according to a conventional technique, and FIG. 3 is a schematic diagram (a) of a cross-section of a wire processed by a one-way laser and a drawing showing a cross-sectional shape of an actually processed superconducting wire.

[0010] Referring to this, laser processing of a superconducting wire according to a conventional technology is performed by moving a substrate processing laser (31) and a thin film layer processing laser (21) radiated from a nozzle chip (30) along the longitudinal direction (Z) of a superconducting wire (10) including a thin film layer (15) composed of an intermediate layer (12), a superconducting layer (13), and a protective layer (14) on a substrate (11).

[0011] That is, the substrate processing laser (31) irradiates a relatively high-power laser to form a cutting end (33) of the substrate and a cutting groove (32) of the substrate, and the thin film layer processing laser (21) irradiates a relatively low-power laser to form a cutting end (23) of the thin film layer and a cutting groove (22) of the thin film layer, so that the functions are divided.

[0012] Due to the nature of laser processing, the part where the laser is initially incident is processed more, so as shown in Fig. 3, the degree of kerf (the part that is actually lost) formation differs between the upper and lower parts in the direction of the thickness of the thin film wire.

[0013] In addition, the kerf formed as described above can have a sharp edge, but this shape has a problem in that insulation breakdown may occur at the edge when applied to an application device through stripping of wire or coil winding.

[0014] Accordingly, as shown in Fig. 2, a substrate processing laser (31) that cuts a substrate (11) by emitting a relatively high-power laser and a thin film layer processing laser (21) that slits a thin film layer using a relatively low-power single pulse are distinguished, and the substrate processing laser (31) moves along a path where a thin film layer cutting groove (22) is formed by the thin film layer processing laser (21) on the upper side of the substrate, thereby slitting the superconducting wire (10).

[0015] However, even in the case of the conventional technology described above, there is a difference in the degree of kerf formation as the laser is incident on one side of the substrate (11), and as a result, the edge of the cut wire is formed sharply, which may still cause problems such as wire peeling or insulation breakdown.

[0016] In addition, in the case of superconducting wires, an oxide film is formed on the edge, which has the problem that the bonding strength of the copper stabilizer may be reduced during a post-process such as plating or deposition to surround the copper stabilizer.

[0017]

[0018] The purpose of the present invention is to provide a method for laser processing of a metal thin film wire, which can form a uniform processing surface shape compared to a one-way laser irradiation method by irradiating a laser to the upper and lower sides in the thickness direction of the wire to be processed, thereby reducing the occurrence of kerf.

[0019] Another object of the present invention is to provide a method for laser processing of a metal thin film wire, characterized in that a beam irradiated from one laser is divided to perform bidirectional irradiation from the upper and lower sides of the wire.

[0020]

[0021] The laser processing method of a metal thin film wire according to the present invention comprises a wire preparation step of preparing a metal thin film wire to be processed so that it can be transported in one direction, a division path setting step of setting a laser division path for the wire prepared in the wire preparation step, an optical system arrangement step of arranging an optical system for forming a laser beam oscillation path on the upper and lower sides of the metal thin film wire prepared in the wire preparation step so as to correspond to the division path set in the division path setting step, and a laser processing step of processing the prepared metal thin film wire while transporting it along the laser beam oscillation path formed through the optical system arrangement step, wherein in the optical system arrangement step, a laser generator for emitting a laser beam to be irradiated on the prepared wire, a beam splitter for splitting the emitted laser beam, a mirror for guiding the laser beam split by the beam splitter to the upper and lower sides of the prepared wire, and a condenser lens for concentrating the laser beam guided by the mirror to form a confocal point on the upper and lower sides of the wire are arranged, and in the laser processing step, the above arrangement is carried out. It is characterized by the simultaneous bidirectional processing of a metal thin film wire from the upper and lower sides by an optical system.

[0022] In the above optical system arrangement step, the beam splitter, mirror, and condenser lens are arranged in multiple numbers according to the number of divided processing steps of the metal thin film wire.

[0023] In the optical system arrangement step, a first beam splitter for dividing a laser beam emitted from the laser generator into upper and lower sides of the metal thin film wire, a first mirror for reflecting the laser beam divided toward the upper side of the metal thin film wire so that it is directed toward the upper surface of the metal thin film wire, a second mirror for reflecting the laser beam divided toward the lower side of the metal thin film wire so that it is directed toward the lower surface of the metal thin film wire, a first condenser lens for condensing light directed toward the upper surface of the metal thin film wire by the first mirror, and a second condenser lens for condensing light directed toward the lower surface of the metal thin film wire by the second mirror are arranged.

[0024] In the optical system arrangement step, a first beam splitter for dividing a laser beam emitted from the laser generator into upper and lower sides of the metal thin film wire, a first mirror for reflecting the laser beam divided toward the upper side of the metal thin film wire so that it is directed toward the upper surface of the metal thin film wire, a second beam splitter for re-dividing the laser beam reflected by the first mirror, a first-first condenser lens and a first-second condenser lens for focusing the laser beam re-divided by the second beam splitter at different positions on the upper surface of the metal thin film wire, a second mirror for reflecting the laser beam divided toward the lower side of the metal thin film wire so that it is directed toward the lower surface of the metal thin film wire, a third beam splitter for re-dividing the laser beam reflected by the second mirror, and focusing the laser beam re-divided by the third beam splitter at different positions on the lower surface of the metal thin film wire, while forming a confocal with the first-first condenser lens. It is characterized in that a 2-1 condenser lens and a 2-2 condenser lens that form a confocal point with the 1-2 condenser lens are arranged.

[0025] The optical system is characterized in that the remaining components except for the laser generator are arranged inside the processing chamber, and the laser generator emits a laser beam to a first beam splitter provided inside the processing chamber through a slit formed on one side of the processing chamber.

[0026] The above laser processing step is characterized in that it further includes an inert gas supply process in which an inert gas containing any one of helium (He), argon (Ar), and neon (Ne) is supplied into the processing chamber.

[0027]

[0028] According to the laser processing method of a metal thin film wire according to the present invention, the occurrence of kerf caused by a laser incident on the metal thin film wire to be processed is reduced.

[0029] That is, since simultaneous processing is performed on the upper and lower sides of the target material in a relatively short time, it has the advantage of reducing the loss rate due to heat input to the laser.

[0030] In addition, since the processing is completed from the center starting from the upper and lower surfaces of the substrate, the shape of the processing surface is formed relatively uniformly, which can reduce the occurrence of stripping of the wire and insulation breakdown when the manufactured coil is applied to an application device.

[0031] In addition, since one laser beam is split to perform bidirectional processing, control is easy, and processing time can be reduced by bidirectional simultaneous processing, and multiple slitting can be performed by forming multiple radiation paths by adjusting the number of beam splitters, mirrors, and lenses, so productivity can be further improved.

[0032] In addition, since bidirectional laser processing is performed by supplying an inert gas inside the processing chamber, the formation of an oxide film on the processing surface is suppressed, which has the advantage of improving the process efficiency in subsequent processing of the laser-processed metal thin film wire.

[0033]

[0034] Figure 1 is a drawing showing the appearance of cracks (a) and burrs (b) formed on the cut surface of a superconducting wire using a conventional gang slitter knife.

[0035] Figure 2 is a drawing showing a laser cutting process for thinning a superconducting wire according to a conventional technique.

[0036] Figure 3 is a schematic diagram of a cross-section of a unidirectional laser-processed wire (a) and a drawing showing the cross-sectional shape of an actually processed superconducting wire.

[0037] FIG. 4 is a drawing for explaining a laser processing process of a metal thin film wire according to one embodiment of the present invention.

[0038] FIG. 5 is a drawing showing one embodiment of a laser oscillation and focusing path for two-part processing of a metal thin film wire according to FIG. 4.

[0039] FIG. 6 is a drawing showing one embodiment of a laser oscillation and focusing path for three-part processing of a metal thin film wire according to FIG. 4.

[0040] Figure 7 is a drawing showing the embodiment of Figure 6 applied to a reel-to-reel substrate transport method.

[0041] Figure 8 is a schematic diagram of a wire section cut by a laser processing method of a metal thin film wire according to the present invention (a) and a drawing comparing the loss rate of the metal thin film wire of the one-way method and the present invention (b).

[0042]

[0043] Before explaining, it should be noted that the description of the present invention is merely an example for structural or functional explanation, and therefore the scope of the present invention should not be construed as being limited by the embodiments described in the text. That is, since the embodiments can be modified in various ways and can take various forms, the scope of the present invention should be understood to include equivalents that can realize the technical idea.

[0044] In addition, the purpose or effect presented in the present invention does not mean that a specific embodiment must include all of them or only include such effects, and therefore, the scope of the present invention should not be understood as being limited thereby.

[0045] All terms used in the description of the present invention have the same meaning as commonly understood by a person of ordinary skill in the art to which the present invention belongs, unless otherwise defined.

[0046] Terms defined in commonly used dictionaries should be interpreted as having a meaning consistent with the contextual meaning of the relevant technology, and cannot be interpreted as having an ideal or overly formal meaning unless explicitly defined in the present invention.

[0047] Additionally, in describing components of embodiments of the present invention, terms such as first, second, A, B, (a), (b), etc. may be used. These terms are only intended to distinguish the components from other components, and the nature, order, or sequence of the components are not limited by the terms.

[0048] In this specification, terms such as “include” or “have” are intended to specify the presence of a feature, number, step, operation, component, part, or combination thereof described in the specification, but should be understood not to exclude in advance the possibility of the presence or addition of one or more other features, numbers, steps, operations, components, parts, or combinations thereof.

[0049] Hereinafter, some embodiments of the present invention will be described in detail with reference to exemplary drawings. When designating components in each drawing, identical components are designated with the same reference numerals whenever possible, even if they appear in different drawings. Furthermore, in the description of the embodiments, if a detailed description of a related known configuration or function is deemed to impede understanding of the embodiments of the present invention, the description has been simplified.

[0050] In the laser processing method of a metal thin film wire according to the present invention, bidirectional simultaneous processing is performed on the upper and lower sides of the metal thin film wire to be processed, and a single laser beam is split to enable bidirectional laser processing.

[0051] In detail, FIG. 4 is a drawing for explaining a laser processing process of a metal thin film wire according to one embodiment of the present invention. In the embodiment described below, a high-temperature superconducting wire is described as the target, but the present invention can be widely applied to processing of various metal thin film wires.

[0052]

[0053] First, in this embodiment, a wire preparation step is performed to prepare a high-temperature superconducting wire to be processed.

[0054] In the above wire preparation step, the high-temperature superconducting wire is installed on a reel-to-reel transport device and prepared so that the wire can be transported while maintaining the set tension.

[0055] And, when the wire to be prepared in the above wire preparation step is decided, a split path setting step is performed to set a laser split path for the wire.

[0056] In the above-mentioned split path setting step, the number of splits can be determined by considering the width of the wire being prepared, and the split considering the width of the wire can be not only equal but also unequal, and an optical system is configured for configuring a laser beam oscillation path according to the determined split shape and number.

[0057] That is, in the above-mentioned split path setting step, if the number of splits of the wire increases, an optical system component for this can be added so that the laser beam emission path can be configured in multiple ways.

[0058] When the laser beam emission path is set in the above-mentioned split path setting step, an optical system arrangement step is performed to form a laser emission path on the upper and lower sides of the wire to correspond to the set laser beam emission path so that laser processing can be performed.

[0059] In the above optical system arrangement step, a laser generator for emitting a laser beam to be irradiated on the prepared wire, a beam splitter for splitting the radiated laser beam, a mirror for guiding the laser beam split by the beam splitter to the upper and lower sides of the prepared wire, and a focusing lens for concentrating the laser beam guided by the mirror to form a confocal point at the upper and lower sides of the wire are arranged.

[0060] And, as described above, the optical system configuration can be configured with multiple components except for the laser generator depending on the number of divided processing of the metal thin film wire, and in the optical system arrangement step, one or more beam splitters, excluding the laser generator, and the spatial arrangement of mirrors and condenser lenses is performed so that each divided laser oscillation path can be implemented.

[0061] In addition, the remaining components except for the laser generator can be accommodated inside a processing chamber where a substrate is transferred and laser processing is performed, and a beam emitted from the laser generator can be incident from outside the processing chamber through a slit formed in the processing chamber and developed into a plurality of laser oscillation paths through arranged optical system components.

[0062] In relation to this, FIG. 5 is a drawing showing one embodiment of a laser oscillation and focusing path for two-part processing of a metal thin film wire according to FIG. 4, and FIG. 6 is a drawing showing one embodiment of a laser oscillation and focusing path for three-part processing of a metal thin film wire according to FIG. 4.

[0063] First, referring to FIG. 5, the laser oscillation path by the optical system configured in this embodiment is such that the laser beam (L) emitted from the laser generator (200) passes through the first beam splitter (420) and becomes an upper beam (L) directed toward the upper side of the high-temperature superconducting wire (10). T ) and the lower beam (L) facing downwards B ) is divided into.

[0064] And, the upper beam (L) divided as above T ) is reflected toward the upper surface of the high-temperature superconducting wire (10) by the first mirror (620), and the lower beam (L B ) is reflected toward the lower surface of the high-temperature superconducting wire (10) by the second mirror (640).

[0065] The upper beam (L) reflected as above T ) and lower beam (L B ) passes through the first condenser lens (820) and the second condenser lens (840), respectively, to form a confocal point on the upper and lower sides of the high-temperature superconducting wire (10), and bidirectional laser processing can be performed.

[0066] Meanwhile, after the optical system arrangement step is completed as in the above embodiment, a laser processing step is performed in which a metal thin film wire installed in a reel-to-reel transport device in the wire preparation step is transported while a bidirectional laser is irradiated.

[0067] In addition, in the laser processing step, an inert gas supply process may be further included to form an atmosphere inside the processing chamber with an inert gas such as helium (He), argon (Ar), or neon (Ne).

[0068] Through the above inert gas supply process, the formation of an oxide film on the processing surface of the metal thin film wire being transported inside the processing chamber can be suppressed, and as a result, the post-processing of the processed metal thin film wire can be performed more stably.

[0069] For example, in the case of a high-temperature superconducting wire, the formation of an oxide film on the processed surface is suppressed through the inert gas supply process, thereby improving copper (Cu) bonding strength when forming a copper-stabilizing agent.

[0070]

[0071] Meanwhile, referring to FIG. 6, the laser oscillation path by the optical system configured in this embodiment is first, the laser beam (L) emitted from the laser generator (200) passes through the first beam splitter (420) and becomes an upper beam (L) directed toward the upper side of the high-temperature superconducting wire (10). T ) and the lower beam (L) facing downwards B ) is divided into.

[0072] And, the upper beam (L) divided as above T ) is reflected toward the upper surface of the high-temperature superconducting wire (10) by the first mirror (620), and the lower beam (L B ) is reflected toward the lower surface of the high-temperature superconducting wire (10) by the second mirror (640).

[0073] The upper beam (L) reflected as above T) is again split by the second beam splitter (440) to form the upper first split beam (L TS1 ) and the upper second split beam (L TS2 ) is separated, and the lower beam (L B ) is redistributed by the third beam splitter (460) to form the lower first split beam (L BS1 ) and the lower second split beam (L BS2 ) are distinguished.

[0074] As described above, the laser beams that are each redistributed on the upper and lower sides of the high-temperature superconducting wire (10) pass through corresponding focusing lenses as in the above-described embodiment to form respective confocal points on the upper and lower sides of the high-temperature superconducting wire (10), and bidirectional laser multi-processing can be performed.

[0075] That is, the upper first split beam (L TS1 ) and the lower first split beam (L BS1 ) each form one confocal point by the first-first condenser lens (822) and the second-first condenser lens (842), and the upper second split beam (L TS2 ) and the lower second split beam (L BS2 ) forms another confocal point, so that bidirectional laser processing can be performed based on the two confocal points.

[0076] Meanwhile, FIG. 7 is a drawing showing the embodiment of FIG. 6 applied to a reel-to-reel substrate transport method.

[0077] With reference to this, in the present embodiment, the reel-to-reel transport device for transporting the high-temperature superconducting wire (10) is configured to include a supply reel (120), a plurality of recovery reels (182, 184, 186), a transport reel (142, 144), and a guide reel (162, 164, 166), and the high-temperature superconducting wire (10) installed in the reel-to-reel transport device is divided after the laser processing step to form a plurality of divided wires (12, 14, 16), which can then be each recovered through a division recovery step.

[0078] In detail, the high-temperature superconducting wire (10) wound on the supply reel (120) is transported in one direction by two transport reels (142, 144), and an optical system arranged to divide the transported high-temperature superconducting wire (10) into three is provided between the transport reels (142, 144).

[0079] That is, while the high-temperature superconducting wire (10) is being transported between the transport reels (142, 144), the laser beam (L) emitted from the laser generator (200) is split into the upper first split beam (L) at the upper and lower portions of the high-temperature superconducting wire (10). TS1 ) and the upper second split beam (L TS2 ) and lower first split beam (L BS1 ) and the lower second split beam (L BS2 ) is divided into.

[0080] And, the multiple split beams divided as described above are incident on the high-temperature superconducting wire (10) using corresponding focusing lenses as described above, and at this time, the present invention allows the upper and lower lasers to form a confocal point with each other, so that bidirectional laser processing can be performed.

[0081] Meanwhile, after the bidirectional laser processing is performed as described above, the guide reels (162, 164, 166) are additionally provided in a number corresponding to the recovery reels between the transport reel (144) and the plurality of recovery reels (182, 184, 186) located relatively rearward based on the substrate transfer direction, and the above-described split recovery step is performed.

[0082] That is, the split wires (12, 14, 16) that have been split into multiple pieces in the laser processing step can be transported and recovered by being matched one-to-one with the guide reels (162, 164, 166) and recovery reels (182, 184, 186).

[0083] To this end, in the above-described division recovery step, each of the divided wires (12, 14, 16) of the high-temperature superconducting wire (10) divided into multiple strands through the above-described laser processing step is connected to each of the corresponding recovery reels (182, 184, 186), and the guide reels (162, 164, 166) can be spaced apart from each other on the transport path so as to correspond to the number of divisions of the wire.

[0084]

[0085] Meanwhile, Fig. 8 is a schematic diagram (a) of a wire cut surface by a laser processing method of a metal thin film wire according to the present invention and a drawing (b) comparing the loss rate of the metal thin film wire of the one-way method and the present invention. As shown in Fig. 8 (a), the cut surface of a metal thin film wire processed by a two-way laser can reduce the area of ​​formation of a heat affected zone (HAZ) and a kerf at the upper and lower portions of the metal thin film wire.

[0086] And, as shown in (b) of Fig. 8, such characteristics can reduce the loss area compared to one-way processing by conventional technology.

[0087] That is, the laser irradiation time applied to the metal thin film wire is reduced through bidirectional simultaneous processing, and as processing is performed from the thickness direction edge of the metal thin film wire toward the center, the shape of the end of the processed surface, which was formed sharply in the conventional one-way processing, can be improved.

[0088]

[0089] The above-described embodiments are merely examples for explaining the laser processing method of a metal thin film wire according to the present invention, and the present invention is not limited to the above-described embodiments, and it will be understood that the technical spirit of the present invention exists to the extent that anyone having ordinary skill in the art to which the present invention pertains can make various modifications and implement the method without departing from the gist of the present invention claimed in the following claims.

[0090]

[0091] The present invention is easy to control and reduces processing time by dividing a single laser beam to perform bidirectional processing, and since the loss rate due to laser heat input is reduced due to the relatively short processing time, productivity during laser processing can be greatly improved. Therefore, it is expected that the industrial usability will be very high as it can be applied in various industrial fields such as semiconductors, battery manufacturing, electric vehicle parts, medical devices, aerospace, and superconducting application devices.

Claims

1. Wire preparation step to prepare the metal thin film wire to be processed so that it can be transported in one direction; A split path setting step for setting a laser split path for the wire prepared in the above wire preparation step; An optical system arrangement step in which an optical system for forming a laser beam oscillation path is arranged on the upper and lower sides of the metal thin film wire prepared in the wire preparation step so as to correspond to the division path set in the division path setting step; A laser processing step in which a prepared metal thin film wire is processed while being transported through a laser beam oscillation path formed through the optical system arrangement step; In the above optical system arrangement step, A laser generator that emits a laser beam to be irradiated on the prepared wire, A beam splitter for splitting the emitted laser beam, A mirror for guiding the laser beam split by the above beam splitter to the upper and lower sides of the prepared wire, and A focusing lens is arranged to focus the laser beam guided by the mirror to form a confocal point on the upper and lower sides of the wire. In the above laser processing step, A laser processing method for a metal thin film wire, characterized in that the metal thin film wire is processed simultaneously in both directions from the upper and lower sides by an optical system arranged as described above.

2. In paragraph 1, In the above optical system arrangement step. A laser processing method for a metal thin film wire, characterized in that a plurality of beam splitters, mirrors, and condenser lenses are arranged according to the number of metal thin film wires to be divided and processed.

3. In paragraph 1, In the above optical system arrangement step, A first beam splitter for dividing a laser beam emitted from the laser generator into upper and lower sides of the metal thin film wire, A first mirror that reflects the laser beam divided toward the upper side of the metal thin film wire so that it is directed toward the upper surface of the metal thin film wire; A second mirror that reflects the laser beam divided toward the lower side of the metal thin film wire so that it is directed toward the lower surface of the metal thin film wire; A first condenser lens for condensing light directed toward the upper surface of the metal thin film wire by the first mirror, and A method for laser processing of a metal thin film wire, characterized in that a second focusing lens is arranged to focus light directed toward the lower surface of the metal thin film wire by the second mirror.

4. In paragraph 1, In the above optical system arrangement step, A first beam splitter for dividing a laser beam emitted from the laser generator into upper and lower sides of the metal thin film wire, A first mirror that reflects the laser beam divided toward the upper side of the metal thin film wire so that it is directed toward the upper surface of the metal thin film wire; A second beam splitter for redistributing the laser beam reflected by the first mirror, A first-first focusing lens and a first-second focusing lens for focusing the laser beam redistributed by the second beam splitter at different locations on the upper surface of the metal thin film wire, A second mirror that reflects the laser beam divided toward the lower side of the metal thin film wire so that it is directed toward the lower surface of the metal thin film wire; A third beam splitter for redistributing the laser beam reflected by the second mirror, A method for laser processing of a metal thin film wire, characterized in that the laser beam redistributed by the third beam splitter is focused at different locations on the lower surface of the metal thin film wire, and a 2-1 focusing lens forming a confocal point with the 1-1 focusing lens and a 2-2 focusing lens forming a confocal point with the 1-2 focusing lens are arranged.

5. In any one of paragraphs 1 to 4, the optical system, A method for laser processing a metal thin film wire, characterized in that the remaining components except for the laser generator are arranged inside the processing chamber, and the laser generator emits a laser beam to a first beam splitter provided inside the processing chamber through a slit formed on one side of the processing chamber.

6. In the fifth paragraph, in the laser processing step, A method for laser processing a metal thin film wire, characterized in that it further includes an inert gas supply process in which an inert gas containing any one of helium (He), argon (Ar), and neon (Ne) is supplied into the processing chamber.

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