Method for forming p-type tin oxide film, and film deposition device
By alternately stacking metallic tin and tetravalent tin oxide films and controlling the atomic ratio, the method efficiently produces p-type tin(II) oxide with superior conductivity properties.
WO2026042434A1 Publication Date: 2026-02-26TOKYO ELECTRON LTD
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Patent Information
- Application Number
- PCT/JP2025/023991
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2024-08-21
- Filing Date
- 2025-07-03
- Publication Date
- 2026-02-26
AI Technical Summary
Technical Problem
Existing methods struggle to produce p-type tin oxide efficiently due to its high cohesive energy and the tendency to form n-type tin oxide during crystallization, making it difficult to achieve stable p-type conductivity.
Method used
A method involving alternately stacking films of metallic tin and tetravalent tin oxide, controlling the atomic ratio of tin to oxygen between 1:1 to 1:1.4, and subjecting the laminate to a heat treatment to produce p-type tin(II) oxide.
Benefits of technology
This approach allows for the stable production of p-type tin(II) oxide with high carrier density and mobility, surpassing the performance of existing methods by ensuring the desired conductivity type and improving crystallinity.
✦ Generated by Eureka AI based on patent content.
Abstract
[Problem] To easily produce p-type tin(II) oxide. [Solution] A first film, which is made of tin metal, and a second film, which is made of tin(IV) oxide, are alternately deposited to form a multilayer object, and the multilayer object is subjected to a heat treatment to produce p-type tin(II) oxide from the multilayer object.
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