Light-emitting chip and light-emitting substrate

Abstract

The present application belongs to the technical field of display. Disclosed are a light-emitting chip and a manufacturing method therefor, and a light-emitting module. The light-emitting chip comprises: a substrate, a light-emitting unit, a dimming film layer and a first protective layer. By means of arranging the first protective layer with relatively high hardness on the side of the dimming film layer facing away from the substrate, the risk of mechanical damage to the dimming film layer can be effectively reduced. For example, during the process of connecting a light-emitting chip to a driving backplane by using a pin-type die bonder, the first protective layer with relatively high hardness can better bear the pressing force exerted by an ejector pin in the pin-type die bonder, which ensures a low probability of damage to the dimming film layer due to the pressing force exerted by the ejector pin, thereby effectively improving the light emission effect of the light-emitting chip.

Description

LED chips and LED substrates

[0001] This application claims priority to Chinese Patent Application No. 202411205345.0, filed on August 29, 2024, entitled "Light Emitting Chip and Light Emitting Substrate", the entire contents of which are incorporated herein by reference. Technical Field

[0002] This application relates to the field of display technology, and in particular to a light-emitting chip and a light-emitting substrate. Background Technology

[0003] Light-emitting diodes (LEDs) possess advantages such as pure color, wide dynamic range, high brightness, high definition, low operating voltage, low power consumption, long lifespan, shock resistance, wide viewing angle, and stable and reliable operation, making it increasingly possible to integrate LED chips into display products. Typically, by transferring a large number of LED chips to a driver backplane, each LED chip can emit light under the drive of the driver backplane.

[0004] Typically, by transferring a large number of LED chips to a driver backplane, each LED chip can emit light under the drive of the driver backplane. Here, the driver backplane connected to the LED chips can be used directly as a display panel for image display, or as a backlight board to provide a light source for the LCD display panel.

[0005] A die bonder is required to connect the LED chip to the driver backplane. However, during the die bonder process, the die bonder's pins apply pressure to the LED chip. If the pressure applied by the pins is too great, the LED chip is easily damaged, resulting in poor light output. Summary of the Invention

[0006] This application provides a light-emitting chip, its manufacturing method, and a light-emitting module. It solves the problem of poor light emission performance in existing light-emitting chips. The technical solution is as follows:

[0007] On the one hand, a light-emitting chip is provided, comprising: a substrate, a light-emitting unit, a dimming film layer, and a first protective layer;

[0008] The light-emitting unit is located on one side of the substrate, and the light-emitting side of the light-emitting unit faces the substrate;

[0009] The dimming film layer is located on the side of the substrate away from the light-emitting unit, and the dimming film layer is used to increase the divergence angle of the light emitted by the light-emitting unit and transmitted through the substrate;

[0010] The first protective layer is located on the side of the dimming film layer that faces away from the substrate;

[0011] The hardness of the first protective layer is higher than that of the dimming film layer.

[0012] Optionally, the dimming film layer includes: multiple layers of first inorganic layer and multiple layers of second inorganic layer stacked together, wherein the multiple layers of first inorganic layer and multiple layers of second inorganic layer are arranged alternately;

[0013] In the dimming film layer, an adjacent layer of the first inorganic layer and a layer of the second inorganic layer are used to form a dimming layer group. In the same dimming layer group, the first inorganic layer is closer to the substrate than the second inorganic layer.

[0014] The hardness of the first protective layer is higher than that of at least one of the first inorganic layer and the second inorganic layer.

[0015] Optionally, the hardness of the second inorganic layer is higher than that of the first inorganic layer, and the first protective layer and the second inorganic layer in the outermost dimming layer group are the same film layer.

[0016] Optionally, the hardness of the first inorganic layer is higher than that of the second inorganic layer, the first protective layer is in contact with the second inorganic layer in the outermost dimming layer group, and the material of the first protective layer is the same as that of the first inorganic layer.

[0017] Optionally, the hardness of the first protective layer is higher than that of the first inorganic layer and also higher than that of the second inorganic layer, and the first protective layer is in contact with the second inorganic layer in the outermost dimming layer group.

[0018] Optionally, the thickness of the first protective layer is greater than or equal to the thickness of the second inorganic layer in the outermost dimming layer group.

[0019] Optionally, the material of the first protective layer includes any one of niobium pentoxide, hafnium dioxide, and zirconium oxide.

[0020] Optionally, the number of dimming layer groups in the dimming film layer ranges from 18 to 39.

[0021] Optionally, the light-emitting chip further includes a reflective film layer located on the side of the light-emitting unit away from the substrate.

[0022] Optionally, a portion of the reflective film layer is in contact with the side of the light-emitting unit facing away from the substrate;

[0023] Alternatively, the light-emitting chip may further include: an insulating protective layer located on the side of the light-emitting unit away from the substrate, and a portion of the insulating protective layer being in contact with the side of the light-emitting unit away from the substrate, and the reflective film layer located on the side of the insulating protective layer away from the substrate.

[0024] Optionally, the light-emitting chip further includes: a second protective layer, the second protective layer being located on the side of the reflective film layer facing away from the substrate;

[0025] The second protective layer has a higher hardness than the reflective film layer.

[0026] Optionally, the number of light-emitting units is at least one, and the light-emitting unit includes a first semiconductor layer, a light-emitting layer, a second semiconductor layer, a current blocking layer, and a current spreading layer stacked in a direction perpendicular to and away from the substrate.

[0027] Optionally, when there are multiple light-emitting units, two adjacent light-emitting units in the multiple light-emitting units are respectively the first light-emitting unit and the second light-emitting unit;

[0028] The light-emitting chip also includes: bridging electrodes and an auxiliary insulating layer;

[0029] The two ends of the bridging electrode are respectively connected to the first semiconductor layer of the first light-emitting unit and the current spreading layer of the second light-emitting unit, and the auxiliary insulating layer is located on the side of the bridging electrode facing the substrate.

[0030] Optionally, the light-emitting chip further includes: a first welding electrode and a second welding electrode, wherein the first welding electrode and the second welding electrode are both distributed on the side of the light-emitting unit away from the substrate, and the first welding electrode and the second welding electrode are respectively connected to different positions of the light-emitting unit;

[0031] The shape of the orthographic projection of the first welding electrode on the substrate is different from the shape of the orthographic projection of the second welding electrode on the substrate.

[0032] On the other hand, a light-emitting substrate is provided, including: a driving backplate, and a plurality of light-emitting chips distributed on the driving backplate, wherein the light-emitting chips are any of the light-emitting chips described above.

[0033] The beneficial effects of the technical solutions provided in this application include at least the following:

[0034] By setting a first protective layer with high hardness on the side of the dimming film layer facing away from the substrate, the risk of mechanical damage to the dimming film layer can be effectively reduced. For example, during the process of connecting the light-emitting chip and the driving backplane using a needle-type die bonder, the first protective layer with high hardness can better withstand the pressing pressure applied by the pins in the needle-type die bonder, thus ensuring that the dimming film layer is less likely to be damaged by the pressing pressure applied by the pins, thereby effectively improving the light emission effect of the light-emitting chip. Attached Figure Description

[0035] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0036] Figure 1 is a schematic diagram of the film structure of a light-emitting chip provided in an embodiment of this application;

[0037] Figure 2 is a schematic diagram of the film structure of another light-emitting chip provided in an embodiment of this application;

[0038] Figure 3 is a schematic diagram of the film structure of another light-emitting chip provided in an embodiment of this application;

[0039] Figure 4 is the light distribution curve of the light emitted by the light-emitting chip provided in the embodiment of this application;

[0040] Figure 5 is a schematic diagram of the film structure of another light-emitting chip provided in an embodiment of this application;

[0041] Figure 6 is a schematic diagram of the film structure of another light-emitting chip provided in an embodiment of this application;

[0042] Figure 7 is a schematic diagram of the film structure of another light-emitting chip provided in an embodiment of this application;

[0043] Figure 8 is a schematic diagram of the film structure of a light-emitting unit provided in an embodiment of this application;

[0044] Figure 9 is a top view of a light-emitting chip provided in an embodiment of this application;

[0045] Figure 10 is a schematic diagram of the film structure of another light-emitting chip provided in an embodiment of this application;

[0046] Figure 11 is a bottom view of a light-emitting chip provided in an embodiment of this application;

[0047] Figure 12 is a top view of another light-emitting chip provided in an embodiment of this application;

[0048] Figure 13 is a bottom view of another light-emitting chip provided in an embodiment of this application;

[0049] Figure 14 is a schematic diagram of a sapphire substrate structure provided in an embodiment of this application;

[0050] Figure 15 is a schematic diagram of a patterned sapphire substrate structure provided in an embodiment of this application;

[0051] Figure 16 is a schematic diagram of a transition layer formed on one side of a patterned structure on a sapphire substrate according to an embodiment of this application;

[0052] Figure 17 is a schematic diagram of a tensile stress epitaxial layer formed on the side of the transition layer away from the substrate, according to an embodiment of this application.

[0053] Figure 18 is a schematic diagram of a first semiconductor layer formed on the side of a tensile epitaxial layer away from the substrate, according to an embodiment of this application.

[0054] Figure 19 is a schematic diagram of a light-emitting layer formed on the side of the first semiconductor layer away from the substrate, according to an embodiment of this application;

[0055] Figure 20 is a schematic diagram of a second semiconductor layer formed on the side of the light-emitting layer away from the substrate, according to an embodiment of this application.

[0056] Figure 21 is a schematic diagram of a current blocking layer formed on the side of the second semiconductor layer away from the substrate, according to an embodiment of this application.

[0057] Figure 22 is a schematic diagram of a current spreading layer formed on the side of the current blocking layer away from the substrate, according to an embodiment of this application.

[0058] Figure 23 is a schematic diagram of forming an auxiliary insulating layer between adjacent light-emitting units according to an embodiment of this application;

[0059] Figure 24 is a schematic diagram of forming a bridging electrode on the side of the auxiliary insulating layer away from the substrate, according to an embodiment of this application.

[0060] Figure 25 is a schematic diagram of a first connection electrode and a second connection electrode formed on the side of the light-emitting unit away from the substrate, according to an embodiment of this application.

[0061] Figure 26 is a schematic diagram of a protective insulating layer formed on the side of the light-emitting unit away from the substrate according to an embodiment of this application;

[0062] Figure 27 is a schematic diagram of a reflective film layer formed on the side of the protective insulating layer away from the substrate, according to an embodiment of this application.

[0063] Figure 28 is a schematic diagram of a second protective layer formed on the side of the reflective film layer away from the substrate, according to an embodiment of this application.

[0064] Figure 29 is a schematic diagram of a first welding electrode and a second welding electrode formed on the side of the second protective layer away from the substrate, according to an embodiment of this application. Detailed Implementation

[0065] To make the objectives, technical solutions, and advantages of this disclosure clearer, the embodiments of this disclosure will be described in further detail below with reference to the accompanying drawings.

[0066] Please refer to Figure 1, which is a schematic diagram of the structure of a light-emitting chip provided in an embodiment of this application. The light-emitting chip 000 may include: a substrate 100, a light-emitting unit 200, a dimming film layer 300, and a first protective layer 400.

[0067] The light-emitting unit 200 in the light-emitting chip 000 is located on one side of the substrate 100, and the light-emitting side of the light-emitting unit 200 can face the substrate 100.

[0068] The dimming film layer 300 in the light-emitting chip 000 is located on the side of the substrate 100 opposite to the light-emitting unit 200. This dimming film layer 300 is used to increase the divergence angle of the light emitted by the light-emitting unit 200 and transmitted through the substrate 100. Thus, the dimming film layer 300 ensures a larger divergence angle of the light emitted by the light-emitting chip 000. After multiple light-emitting chips 000 are transferred and connected to a driving backplane to form a light-emitting substrate, it ensures better light mixing between two adjacent light-emitting chips 000, resulting in more uniform light emitted from the light-emitting substrate. For example, when this light-emitting substrate is used as a backlight panel, it ensures a lower light mixing distance for the backlight panel, thereby ensuring a lower overall thickness of the backlight module integrating this backlight panel.

[0069] The first protective layer 400 in the light-emitting chip 000 is located on the side of the dimming film layer 300 away from the light-emitting unit 200, and the hardness of the first protective layer 400 is higher than that of the dimming film layer 300.

[0070] In this embodiment, since the hardness of the first protective layer 400 is higher than that of the dimming film layer 300, the risk of mechanical damage to the dimming film layer 300 can be effectively reduced through the protective effect of the first protective layer 400. For example, during the process of connecting the light-emitting chip 000 and the driving backplane using a needle-type die bonder, the first protective layer 400, with its higher hardness, can better withstand the pressing pressure applied by the pins in the needle-type die bonder, thus ensuring that the dimming film layer 300 is less likely to be damaged by the pressing pressure applied by the pins, thereby effectively improving the light emission effect of the light-emitting chip 000.

[0071] In summary, the light-emitting chip provided in this application includes: a substrate, a light-emitting unit, a dimming film layer, and a first protective layer. By providing a first protective layer with high hardness on the side of the dimming film layer facing away from the substrate, the risk of mechanical damage to the dimming film layer can be effectively reduced. For example, during the process of connecting the light-emitting chip and the driving backplane using a needle-type die bonder, the first protective layer with high hardness can better withstand the pressing pressure applied by the pins in the needle-type die bonder, ensuring that the dimming film layer is less likely to be damaged by the pressing pressure applied by the pins, thereby effectively improving the light emission effect of the light-emitting chip.

[0072] Optionally, as shown in Figure 2, which is a schematic diagram of another light-emitting chip provided in an embodiment of this application, the dimming film layer 300 in the light-emitting chip 000 is composed of multiple layers of first inorganic layers 301 and multiple layers of second inorganic layers 302 stacked together. The multiple layers of first inorganic layers 301 and multiple layers of second inorganic layers 302 are arranged alternately; that is, a second inorganic layer 302 is distributed between two adjacent first inorganic layers 301, and a first inorganic layer 301 is distributed between two adjacent second inorganic layers 302.

[0073] In the dimming film layer 300, a first inorganic layer 301 and a second inorganic layer 302 distributed adjacently together form a dimming layer group 300a. In the same dimming layer group 300a, the first inorganic layer 301 is closer to the substrate 100 than the second inorganic layer 302.

[0074] For example, the dimming film layer 300 in the light-emitting chip 000 can be a distributed Bragg mirror. Then, a single dimming layer group 300a in the dimming film layer 300 consists of an inorganic layer with a high refractive index and an inorganic layer with a low refractive index. That is, in the same dimming layer group 300a, if the first inorganic layer 301 has a high refractive index, the second inorganic layer 302 has a low refractive index; conversely, if the first inorganic layer 301 has a low refractive index, the second inorganic layer 302 has a high refractive index.

[0075] In this process, the hardness of the first protective layer 400 in the light-emitting chip 000 is higher than that of at least one of the first inorganic layer 301 and the second inorganic layer 302.

[0076] It should be noted that the first protective layer 400 in the light-emitting chip 000, and the first inorganic layer 301 and the second inorganic layer 302 in the dimming module 300 can both be made of inorganic materials. Here, the choice of inorganic material directly determines the hardness of the film layer to be fabricated. For example, a high-hardness inorganic material can be used to fabricate the first protective layer 400, and a relatively low-hardness inorganic material can be used to fabricate the first inorganic layer 301 and / or the second inorganic layer 302.

[0077] It should also be noted that one of the first inorganic layer 301 and the second inorganic layer 302 can also be made of an inorganic material with relatively high hardness. In this case, the material of the first protective layer 400 can be consistent with the material of the inorganic layer with the highest hardness among the first inorganic layer 301 and the second inorganic layer 302. Of course, the first inorganic layer 301 and the second inorganic layer 302 can also both be made of inorganic materials with relatively low hardness. In this case, the material of the first protective layer 400 is different from the material of the first inorganic layer 301 and also different from the material of the second inorganic layer 302. Therefore, the embodiments of this application will be illustrated with the following three possible implementation methods as examples:

[0078] In the first possible implementation, if the second inorganic layer 302 is made of an inorganic material with relatively high hardness, the hardness of the second inorganic layer 302 is higher than that of the first inorganic layer 301. The material of the second inorganic layer 302 can be the same as that of the first protective layer 400. The hardness of the inorganic materials used in both the second inorganic layer 302 and the first protective layer 400 is higher than that of the inorganic material used in the first inorganic layer 301.

[0079] In this case, as shown in Figure 3, which is a schematic diagram of another light-emitting chip provided in an embodiment of this application, the first inorganic layer 301 is closer to the substrate 100 than the second inorganic layer 302 within the same dimming layer group 300a in the dimming module 300. Therefore, the first protective layer 400 can be the same film layer as the second inorganic layer 302 in the outermost dimming layer group 300a. That is, the first protective layer 400 can serve both as a film layer protecting the dimming film layer 300 and as the second inorganic layer 302 in the outermost dimming layer group 300a, thus achieving a dimming effect.

[0080] In this way, there is no need to set an additional protective film layer on the outermost side of the dimming film layer 300, which can ensure that the dimming film layer 300 is less likely to be mechanically damaged, and thus ensure that the overall thickness of the film layer set on the side of the substrate 100 away from the light-emitting unit 200 in the light-emitting chip 000 is relatively small.

[0081] For example, in the dimming film layer 300, the second inorganic layer 302 can be made of inorganic materials with relatively high hardness, such as niobium pentoxide, hafnium dioxide, or zirconium oxide; the first inorganic layer 301 can be made of inorganic materials with relatively low hardness, such as zinc oxide, titanium dioxide, tantalum pentoxide, silicon dioxide, or magnesium oxide.

[0082] In the second possible implementation, if the first inorganic layer 301 is made of an inorganic material with relatively high hardness, the hardness of the first inorganic layer 301 is higher than that of the second inorganic layer 302. The material of the first protective layer 400 can be the same as that of the first inorganic layer 301. The hardness of the inorganic materials used in the first inorganic layer 301 and the first protective layer 400 is higher than that of the material used in the second inorganic layer 302.

[0083] In this case, as shown in Figure 2, the first protective layer 400 needs to contact the second inorganic layer 302 in the outermost dimming layer group 300a. Here, since the first inorganic layer 301 is closer to the substrate 100 than the second inorganic layer 302 within the same dimming layer group 300a in the dimming module 300, by making the first protective layer 400 contact the second inorganic layer 302 in the outermost dimming layer group 300a, it can be ensured that the first protective layer 400 can protect the outermost and relatively less hard second inorganic layer 302 in the dimming film layer 300.

[0084] For example, in the dimming film layer 300, the first inorganic layer 301 and the first protective layer 400 can be made of inorganic materials with relatively high hardness, such as niobium pentoxide, hafnium dioxide or zirconium oxide; the second inorganic layer 302 can be made of inorganic materials with relatively low hardness, such as zinc oxide, titanium dioxide, tantalum pentoxide, silicon dioxide, magnesium oxide.

[0085] In a third possible implementation, where both the first inorganic layer 301 and the second inorganic layer 302 are made of inorganic materials with low hardness, the material of the first protective layer 400 is different from the materials of the first inorganic layer 301 and the second inorganic layer 302. The hardness of the first protective layer 400 is higher than that of the first inorganic layer 301 and also higher than that of the second inorganic layer 302.

[0086] In this case, as shown in Figure 2, the first protective layer 400 also needs to contact the second inorganic layer 302 in the outermost dimming layer group 300a. In this way, by making the first protective layer 400 contact the second inorganic layer 302 in the outermost dimming layer group 300a, it can be ensured that the first protective layer 400 can protect each first inorganic layer 301 and each second inorganic layer 302 in the dimming film layer 300.

[0087] For example, in the dimming film layer 300, the first protective layer 400 can be made of inorganic materials with relatively high hardness, such as niobium pentoxide, hafnium dioxide, or zirconium oxide; the first inorganic layer 301 and the second inorganic layer 302 can be made of any two of inorganic materials with relatively low hardness, such as zinc oxide, titanium dioxide, tantalum pentoxide, silicon dioxide, or magnesium oxide.

[0088] Optionally, to ensure that the first protective layer 400 can better withstand the pressing pressure applied by the pins in the needle-type die bonder, for the second and third possible implementations described above, the thickness of the first protective layer 400 needs to be greater than or equal to the thickness of the second inorganic layer 302 in the outermost dimming layer group 300a. Thus, a relatively thicker first protective layer 400 can further reduce the probability of the dimming film layer 300 being damaged by the pressing pressure applied by the pins, thereby effectively improving the light emission effect of the light-emitting chip 000.

[0089] In this embodiment, the number of dimming layer groups 300a in the dimming film layer 300 ranges from 18 to 39. Here, the sum of the overall thicknesses of the first protective layer 400 and the dimming film layer 300 ranges from 1 micrometer to 5 micrometers. During the passage of light emitted from the light-emitting unit 200 through the dimming film layer 300, the dimming film layer 300 can adjust the emission angle of the emitted light. For example, by controlling the refractive index and thickness of the first inorganic layer 301 and the second inorganic layer 302, as well as the number of dimming layer groups 300a, the transmittance of emitted light within different center wavelength ranges at different angles can be controlled. The thickness of the first inorganic layer 301 is calculated as one-quarter of the center wavelength of the light passing through it, and the thickness of the second inorganic layer 302 is also calculated as one-quarter of the center wavelength of the light passing through it.

[0090] When the number of dimming layer groups 300a in the dimming film layer 300 ranges from 18 to 39, the divergence angle of the light emitted by the light-emitting unit 200 and transmitted through the dimming film layer 300 can be increased to a range of 155° to 175°, so that the divergence angle of the light emitted by the light-emitting chip 000 can be in the range of 155° to 175°, thereby ensuring that the divergence angle of the light emitted by the light-emitting chip 000 is large.

[0091] For example, as shown in Figure 4, Figure 4 is a light distribution curve of the light emitted by a light-emitting chip according to an embodiment of this application. The three curves in Figure 4 represent the light distribution curves of the light emitted by the light-emitting unit 200 in the light-emitting chip 000 at different light emission angles within the visible light range. Curve a represents the light distribution curve of the light emitted by the light-emitting chip 000 at a light emission angle of 155°; curve b represents the light distribution curve of the light emitted by the light-emitting chip 000 at a light emission angle of 165°; and curve c represents the light distribution curve of the light emitted by the light-emitting chip 000 at a light emission angle of 175°. As can be seen from curves a, b, and c in Figure 4, when the light-emitting unit 200 in the light-emitting chip 000 emits light within the visible light range and the number of dimming layer groups 300a in the dimming film layer 300 ranges from 18 to 39, the divergence angle of the light emitted by the light-emitting chip 000 can be in the range of 155° to 175°.

[0092] In this application, as shown in Figures 2 and 3, the light-emitting chip 000 may further include a reflective film layer 500, which may be located on the side of the light-emitting unit 200 facing away from the substrate 100. The reflective film layer 500 is used to reflect the light emitted by the light-emitting unit 200 that travels in the direction facing away from the substrate 100, so that the reflected light can be emitted in the direction toward the substrate 100, thereby improving the light extraction efficiency of the light-emitting chip 000.

[0093] For example, the reflective film layer 500 can also be a distributed Bragg reflector. This reflective film layer 500 consists of multiple layers of third inorganic layers 501 and multiple layers of fourth inorganic layers 502 stacked together. The multiple layers of third inorganic layers 501 and multiple layers of fourth inorganic layers 502 are arranged alternately. That is, a fourth inorganic layer 502 is distributed between two adjacent third inorganic layers 501, and a third inorganic layer 501 is distributed between two adjacent fourth inorganic layers 502. Furthermore, the adjacent layers of third inorganic layers 501 and fourth inorganic layers 502 are used to form a reflective layer group 500a. The number of reflective layer groups 500a in the reflective film layer 500 is from 10 to 70, and the overall thickness is from 2 micrometers to 6 micrometers.

[0094] In the same reflective layer group 500a, the fourth inorganic layer 502 is closer to the substrate 100 than the third inorganic layer 501. Each reflective layer group 500a in the reflective film layer 500 consists of one inorganic layer with a higher refractive index and one inorganic layer with a lower refractive index. That is, when the refractive index of the third inorganic layer 501 is higher, the refractive index of the fourth inorganic layer 502 is lower; conversely, when the refractive index of the third inorganic layer 501 is lower, the refractive index of the fourth inorganic layer 502 is higher. The reflective film layer 500 controls the reflectivity of light within different center wavelength ranges at different angles by controlling the refractive indices and thicknesses of the third inorganic layer 501 and the fourth inorganic layer 502, as well as the number of reflective layer groups 500a. The thickness of the third inorganic layer 501 is calculated as one-quarter of the center wavelength of the light passing through it. The thickness of the fourth inorganic layer 502 is calculated as one-quarter of the center wavelength of the light passing through it.

[0095] In this embodiment, there are two ways to arrange the light-emitting film layer 500 and the light-emitting unit 200. The following two cases will be used as examples to illustrate this embodiment.

[0096] In the first scenario, as shown in Figures 2 and 3, a portion of the reflective film layer 500 can contact the side of the light-emitting unit 200 facing away from the substrate 100. Here, since the reflective film layer 500 is composed of multiple layers of third inorganic layer 501 and multiple layers of fourth inorganic layer 502, it has a certain insulating ability, ensuring that even if a portion of the reflective film layer 500 directly contacts the side of the light-emitting unit 200 facing away from the substrate 100, the internal structure of the light-emitting unit 200 will not experience a short circuit.

[0097] In the second scenario, please refer to Figure 5, which is a schematic diagram of another light-emitting chip structure provided in an embodiment of this application. The light-emitting chip 000 may further include: an insulating protective layer 600, which is located on the side of the light-emitting unit 200 away from the substrate 100, and a portion of the insulating protective layer 600 is in contact with the side of the light-emitting unit 200 away from the substrate 100; and a reflective film layer 500 is located on the side of the insulating protective layer 600 away from the substrate 100.

[0098] Here, the main material of the insulating protective layer 600 is aluminum oxide, and its thickness ranges from 1.15 micrometers to 11 micrometers. The insulating protective layer 600 exhibits superior insulating encapsulation performance compared to the reflective film layer 500. Therefore, when a portion of the insulating protective layer 600 contacts the side of the light-emitting unit 200 facing away from the substrate 100, not only is a short circuit prevented from occurring within the internal structure of the light-emitting unit 200, but the ability to encapsulate and protect the light-emitting unit 200 is also enhanced. Thus, even if the reflective film layer 500 suffers mechanical damage, the insulating protective layer 600 can prevent moisture from the external environment from invading the interior of the light-emitting chip 000, thereby improving the reliability of the light-emitting chip 000.

[0099] In this embodiment of the application, please refer to Figure 6, which is a schematic diagram of another light-emitting chip structure provided in this embodiment. The light-emitting chip 000 may further include a second protective layer 700, which is located on the side of the reflective film layer 500 facing away from the substrate 100. The hardness of the second protective layer 700 is at least higher than the hardness of at least one of the third inorganic layer 501 and the fourth inorganic layer 502 in the reflective film layer 500, and the thickness of the second protective layer 700 is 500 angstroms to 1000 angstroms. The second protective layer 700, with its certain thickness and high hardness, can protect the reflective film layer 500 from mechanical damage, prevent moisture from intruding into the interior of the light-emitting chip 000, and further improve the reliability of the light-emitting chip 000.

[0100] It should be noted that the second protective layer 700 in the light-emitting chip 000, and the third inorganic layer 501 and fourth inorganic layer 502 in the reflective module 500 can all be made of inorganic materials. The choice of inorganic material directly determines the hardness of the resulting film. For example, a high-hardness inorganic material can be used to make the second protective layer 700, and a relatively low-hardness inorganic material can be used to make the third inorganic layer 501 and / or the fourth inorganic layer 502.

[0101] It should also be noted that either the third inorganic layer 501 or the second inorganic layer 502 can be made of an inorganic material with relatively high hardness. In this case, the material of the second protective layer 700 can be consistent with the material of the inorganic layer with the highest hardness among the third inorganic layer 501 and the fourth inorganic layer 502. Of course, the third inorganic layer 501 and the fourth inorganic layer 502 can also both be made of inorganic materials with relatively low hardness. In this case, the material of the second protective layer 700 is different from the material of the third inorganic layer 501 and also different from the material of the fourth inorganic layer 502. Therefore, the embodiments of this application will be illustrated with the following three possible implementation methods as examples:

[0102] In the first possible implementation, when the third inorganic layer 501 is made of an inorganic material with relatively high hardness, the hardness of the third inorganic layer 501 is higher than that of the fourth inorganic layer 502. The material of the third inorganic layer 501 can be the same as that of the second protective layer 700. The hardness of the inorganic materials used in the third inorganic layer 501 and the second protective layer 700 is higher than that of the inorganic material used in the fourth inorganic layer 502.

[0103] In this case, as shown in Figure 7, which is a schematic diagram of another light-emitting chip provided in an embodiment of this application, the fourth inorganic layer 502 is closer to the substrate 100 than the third inorganic layer 501 within the same reflective layer group 500a in the reflective module 500. Therefore, the second protective layer 700 can be the same film layer as the third inorganic layer 501 in the outermost reflective layer group 500a. That is, the second protective layer 700 can serve both as a film layer for protecting the reflective film layer 700 and as the third inorganic layer 501 in the outermost reflective layer group 300a, thus reflecting light.

[0104] In this way, there is no need to set an additional protective film layer on the outermost side of the reflective film layer 500, which can ensure that the reflective film layer 500 is less likely to be mechanically damaged, and thus ensure that the overall thickness of the film layer set on the side of the light-emitting unit 200 away from the substrate 100 in the light-emitting chip 000 is relatively small.

[0105] For example, in the reflective film layer 500, the third inorganic layer 501 can be made of inorganic materials with relatively high hardness, such as niobium pentoxide, hafnium dioxide, or zirconium oxide; the fourth inorganic layer 502 can be made of inorganic materials with relatively low hardness, such as zinc oxide, titanium dioxide, tantalum pentoxide, silicon dioxide, or magnesium oxide.

[0106] In the second possible implementation, if the fourth inorganic layer 502 is made of an inorganic material with relatively high hardness, the hardness of the fourth inorganic layer 502 is higher than that of the third inorganic layer 501. The material of the second protective layer 700 can be the same as that of the fourth inorganic layer 502. The hardness of the inorganic materials used in the fourth inorganic layer 502 and the second protective layer 700 is higher than that of the material used in the third inorganic layer 501.

[0107] In this case, as shown in Figure 6, the second protective layer 700 needs to contact the third inorganic layer 501 in the outermost reflective layer group 500a. Here, since the fourth inorganic layer 502 is closer to the substrate 100 than the third inorganic layer 501 within the same reflective layer group 500a in the reflective film layer 500, by making the second protective layer 700 contact the third inorganic layer 501 in the outermost reflective layer group 50a, it can be ensured that the second protective layer 700 can protect the outermost and relatively less hard third inorganic layer 501 in the reflective film layer 500.

[0108] For example, in the reflective film layer 500, the fourth inorganic layer 502 and the second protective layer 700 can be made of inorganic materials with relatively high hardness, such as niobium pentoxide, hafnium dioxide or zirconium oxide; the third inorganic layer 501 can be made of inorganic materials with relatively low hardness, such as zinc oxide, titanium dioxide, tantalum pentoxide, silicon dioxide, magnesium oxide.

[0109] In a third possible implementation, where both the fourth inorganic layer 502 and the third inorganic layer 501 are made of inorganic materials with low hardness, the material of the second protective layer 700 is different from that of the third inorganic layer 501 and the fourth inorganic layer 502. The hardness of the second protective layer 700 is higher than that of the third inorganic layer 501 and also higher than that of the fourth inorganic layer 502.

[0110] In this case, as shown in Figure 6, the second protective layer 700 also needs to contact the third inorganic layer 501 in the outermost reflective layer group 700a. In this way, by making the second protective layer 700 contact the third inorganic layer 501 in the outermost reflective layer group 500a, it can be ensured that the second protective layer 700 can protect each third inorganic layer 501 and each fourth inorganic layer 502 in the reflective film layer 500.

[0111] For example, in the reflective film layer 500, the second protective layer 700 can be made of inorganic materials with relatively high hardness, such as niobium pentoxide, hafnium dioxide, zirconium oxide, or aluminum oxide; the third inorganic layer 501 and the fourth inorganic layer 502 can be made of any two of inorganic materials with relatively low hardness, such as zinc oxide, titanium dioxide, tantalum pentoxide, silicon dioxide, or magnesium oxide.

[0112] In this embodiment, the number of light-emitting units 200 included in the light-emitting chip 000 is at least one. Referring to FIG8, each light-emitting unit 200 in the light-emitting chip 000 includes: a first semiconductor layer 202, a light-emitting layer 203, a second semiconductor layer 204, a current blocking layer 205, and a current spreading layer 206 stacked along a direction perpendicular to and away from the substrate 100. Optionally, each light-emitting unit 200 further includes: a tensile epitaxial layer 201 located on the side of the first semiconductor layer 202 facing the substrate 100, which is used for the transition between the substrate 100 and the first semiconductor layer 202.

[0113] Here, the main material of the tensile stress epitaxial layer 201 is gallium nitride, with a thickness of 500 angstroms to 1500 angstroms.

[0114] The main material of the First Semiconductor 202 is gallium nitride, with tetravalent silicon doped in between, and a thickness of 0.5 micrometers to 5 micrometers.

[0115] The main materials of the light-emitting layer 203 are gallium nitride and indium gallium nitride. It is a barrier / well stacked structure of the two materials, with 5 to 12 stacks and a thickness of 100 to 1500 angstroms.

[0116] The second semiconductor layer 204 is primarily made of gallium nitride, with trivalent magnesium doped in between, and has a thickness of 0.5 to 5 micrometers.

[0117] The main material of the current blocking layer 205 is indium gallium nitride or silicon dioxide, with a thickness of 100 to 500 angstroms.

[0118] The current spreading layer 206 is made of indium tin oxide and has a thickness of 500 to 1500 angstroms.

[0119] For example, the orthographic projection of the first semiconductor layer 202 on the substrate 100 lies within the orthographic projection of the tensile epitaxial layer 201 on the substrate 100; the orthographic projection of the light-emitting layer 203 on the substrate 100 lies within the orthographic projection of the first semiconductor layer 202 on the substrate 100, and the edge of the light-emitting layer 203 does not coincide with the edge of the first semiconductor 202 in the direction parallel to the substrate 100; the orthographic projection of the second semiconductor layer 204 on the substrate 100 lies within the orthographic projection of the light-emitting layer 203 on the substrate 100; the orthographic projection of the current blocking layer 205 on the substrate 100 lies within the central region of the orthographic projection of the second semiconductor layer 204 on the substrate 100, and the edge of the current blocking layer 205 does not coincide with the edge of the second semiconductor 204 in the direction parallel to the substrate 100; the orthographic projection of the current spreading layer 206 on the substrate 100 lies within the orthographic projection of the second semiconductor layer 204 on the substrate 100, and the current spreading layer 206 covers the current blocking layer 205.

[0120] In this application, after an electric field is formed on both sides of the light-emitting unit 200, the first semiconductor layer 202 can inject electrons into the light-emitting layer 203, and the second semiconductor layer 204 can inject holes into the light-emitting layer 203. Electrons and holes can combine in the light-emitting layer 203 to form excitons in a high-energy state. However, the excitons in the high-energy state are unstable and can easily transition to excitons in a low-energy state and release energy. When releasing energy, photons are generated to emit light with a wavelength in a certain range.

[0121] It should be noted that, since current always chooses the path of lowest resistance, the current conduction within the light-emitting unit is uneven. As shown in Figure 7, the current in the second semiconductor layer 204 is congested near the first connecting electrode 1011. This results in uneven current distribution in the light-emitting layer 203, leading to uneven light-emitting areas and reduced luminous efficiency. The current-blocking layer 205, on the one hand, blocks the current from diffusing downwards from the first connecting electrode 1011, ensuring that most of the injected current flows to the light-emitting area outside the first connecting electrode 1011. This increases lateral current transport and reduces the current density flowing to the light-emitting area below the first connecting electrode 1011, effectively reducing the proportion of the total injected current directly below the first connecting electrode 1011, thereby reducing light loss caused by light absorption and blocking by the metal of the first connecting electrode 1011. On the other hand, the high-conductivity current-blocking layer 206 guides the current to areas away from the first connecting electrode 1011, allowing the current to spread as evenly as possible throughout the entire light-emitting unit, enabling each area of ​​the light-emitting layer 203 to emit light. Reduce current congestion near the first connecting electrode 1011 to improve light output power.

[0122] In this embodiment, please refer to Figures 9 and 10. Figure 9 is a bottom view of a light-emitting chip according to another embodiment of this application, and Figure 10 is a schematic diagram of the film structure of the light-emitting chip shown in Figure 9 at point A-A'. When there are multiple light-emitting units 200 in the light-emitting chip 000, two adjacent light-emitting units 200 are respectively a first light-emitting unit 210 and a second light-emitting unit 220. Here, a bridging electrode 800 and an auxiliary insulating layer 900 are disposed between the first light-emitting unit 210 and the second light-emitting unit 220.

[0123] The bridging electrode 800 is connected at both ends to the first semiconductor layer 202 of the first light-emitting unit 210 and the current spreading layer 206 of the second light-emitting unit 220, respectively. An auxiliary insulating layer 900 is located on the side of the bridging electrode 800 facing the substrate 100. The auxiliary insulating layer 900 is used to block the electrical connection between the bridging electrode 800 and other layers of the first light-emitting unit 210 and the second light-emitting unit 220. The main material of the bridging electrode is metals such as chromium (Cr), titanium (Ti), aluminum (Al), nickel (Ni), platinum (Pt), and gold (Au), with a thickness of 1 micrometer to 3 micrometers. The main material of the auxiliary insulating layer 900 is silicon dioxide, with a thickness of 100 angstroms to 2000 angstroms.

[0124] The scheme of connecting the first light-emitting unit 210 and the second light-emitting unit 220 using a bridging electrode 800 is used to realize a high-voltage light-emitting chip, thereby improving the performance of the chip. The high-voltage light-emitting chip achieves a higher voltage by integrating multiple light-emitting units 200 on the same chip and connecting them in series via the bridging electrode 800. High-voltage chips have higher voltages than conventional chips, require lower drive current for the same power consumption, have higher photoelectric conversion efficiency, and can reduce power loss and heat generation.

[0125] For example, in the process of driving the light-emitting chip 000 to emit light, if a voltage of 3 volts needs to be applied to the driving light-emitting chip 000, then the light-emitting chip 000 needs to contain one light-emitting unit 200; if a voltage of 6 volts needs to be applied to the driving light-emitting chip 000, then the light-emitting chip 000 needs to contain two light-emitting units 200, and these two light-emitting units 200 are connected in series through a bridging electrode 800; if a voltage of 9 volts needs to be applied to the driving light-emitting chip 000, then the light-emitting chip 000 needs to contain three light-emitting units 200, and every two adjacent light-emitting units 200 need to be ...3 volts needs to be applied to the driving light-emitting chip 000, then the driving light-emitting chip 000 needs to contain one light-emitting unit 200; if a voltage of 6 volts needs to be applied to the driving light-emitting chip 000, then the driving light-emitting chip 000 needs to contain one light-emitting unit 200; if a voltage of 9 volts needs to be applied to the driving light-emitting chip 000, then the driving light-emitting chip 000 needs to contain three light-emitting units 200, and every two adjacent light-emitting units 200 need to be connected in series through a bridging electrode 800; if a voltage of 9 volts needs to be applied to the driving light-emitting chip 000, then the driving light-emitting chip 000 needs to When the applied voltage is 12 volts, the light-emitting chip 000 needs to contain four light-emitting units 200, and each pair of adjacent light-emitting units 200 needs to be connected in series through a bridging electrode 800; when the applied voltage is 18 volts, the light-emitting chip 000 needs to contain six light-emitting units 200, and each pair of adjacent light-emitting units 200 needs to be connected in series through a bridging electrode 800; when the applied voltage is 24 volts, the light-emitting chip 000 needs to contain eight light-emitting units 200, and each pair of adjacent light-emitting units 200 needs to be connected in series through a bridging electrode 800.

[0126] Optionally, as shown in Figure 10, the light-emitting chip 000 further includes a first welding electrode 1010 and a second welding electrode 1020. The first welding electrode 1010 and the second welding electrode 1020 are both distributed on the side of the light-emitting unit 200 away from the substrate 100, and the first welding electrode 1010 and the second welding electrode 1020 are respectively connected to different positions of the light-emitting unit 200.

[0127] For example, when the light-emitting chip 000 includes one light-emitting unit 200, the first welding electrode 1010 is bonded to the current spreading layer 206 in the light-emitting unit 200, and the second welding electrode 1020 is bonded to the first semiconductor layer 202 in the light-emitting unit 200. When the light-emitting chip 000 includes multiple light-emitting units 200, the first welding electrode 1010 is bonded to the current spreading layer 206 in the outermost light-emitting unit 200, and the second welding electrode 1020 is bonded to the first semiconductor layer 202 in the other outermost light-emitting unit 200.

[0128] In this application, the first welding electrode 1010 and the second welding electrode 1020 can be evenly distributed on the side of the second protective layer 700 away from the substrate 100. The first welding electrode 1010 can sequentially penetrate the second protective layer 700, the reflective film layer 500 and the insulating protective layer 600 and then overlap with the current spreading layer 206 in the corresponding light-emitting unit 200; the second welding electrode 1020 can sequentially penetrate the second protective layer 700, the reflective film layer 500 and the insulating protective layer 600 and then overlap with the first semiconductor layer 202 in the corresponding light-emitting unit 200.

[0129] The main materials of the first welding electrode 1010 and the second welding electrode 1020 are metals such as chromium (Cr), titanium (Ti), aluminum (Al), nickel (Ni), platinum (Pt), gold (Au), tin (Sn), silver (Ag), and copper (Cu), with a thickness of 0.8 micrometers to 30 micrometers.

[0130] In this application, the first welding electrode 1010 can serve as the anode, and the second welding electrode 1020 can serve as the cathode. Thus, when a signal is received at the first welding electrode 1010 and the second welding electrode 1020, the light-emitting layer 203 in the light-emitting unit 200 can emit light.

[0131] Optionally, to ensure that the first welding electrode 1010 can better connect with the current spreading layer 206 in the corresponding light-emitting unit 200, a first connecting electrode 1011 can be provided between the first welding electrode 1010 and the current spreading layer 206 in the corresponding light-emitting unit 200. Similarly, to ensure that the second welding electrode 1020 can better connect with the first semiconductor layer 202 in the corresponding light-emitting unit 200, a second connecting electrode 1021 can be provided between the second welding electrode 1020 and the first semiconductor layer 202 in the corresponding light-emitting unit 200.

[0132] The main materials of the first connecting electrode 1011 and the second connecting electrode 1021 are metals such as chromium (Cr), titanium (Ti), aluminum (Al), nickel (Ni), platinum (Pt), and gold (Au), with a thickness of 1 micrometer to 3 micrometers. Here, because the first connecting electrode 1011 and the second connecting electrode 1021 have better conductivity, connecting the first welding electrode 1010 to the current spreading layer 206 in the corresponding light-emitting unit 200 via the first connecting electrode 1011 ensures good conductivity between the first welding electrode 1010 and the current spreading layer 206. Similarly, connecting the second welding electrode 1020 to the first semiconductor layer 202 in the corresponding light-emitting unit 200 via the second connecting electrode 1021 also ensures good conductivity between the second welding electrode 1020 and the first semiconductor layer 202.

[0133] Optionally, as shown in Figure 11, which is a top view of the light-emitting chip shown in Figure 9, the shape of the orthographic projection of the first welding electrode 1010 onto the substrate 100 is different from the shape of the orthographic projection of the second welding electrode 1020 onto the substrate 100. That is, the first welding electrode 1010 and the second welding electrode 1020 can be an asymmetrical structure. In the asymmetrical structure design, the orthographic projection of the first welding electrode 1010 onto the substrate 100 is rectangular, and the orthographic projection of the second welding electrode 1020 onto the substrate 100 is trapezoidal. During the process of connecting the light-emitting chip to the driving backplane, the asymmetrical structure design can better distinguish the first welding electrode 1010 and the second welding electrode 1020.

[0134] It should be noted that in other possible implementations, as shown in Figures 12 and 13, Figure 12 is a bottom view of another light-emitting chip provided in another embodiment of this application, and Figure 13 is a top view of the light-emitting chip shown in Figure 12, the shape of the orthographic projection of the first welding electrode 1010 on the substrate 100 can also be the same as the shape of the orthographic projection of the second welding electrode 1020 on the substrate 100, that is, the first welding electrode 1010 and the second welding electrode 1020 can be symmetrical structures. For example, in a symmetrical structure design, the shape of the orthographic projection of the first welding electrode 1010 on the substrate 100 is rectangular, and the shape of the orthographic projection of the second welding electrode 1020 on the substrate 100 is also rectangular.

[0135] In this application, as shown in FIG10, the substrate 100 may include a sapphire substrate 101 and a transition layer 103. The main material of the sapphire substrate 101 is aluminum oxide, and the thickness is 70 micrometers to 200 micrometers. The main material of the transition layer 103 is gallium nitride, and the thickness is 100 angstroms to 1000 angstroms. The transition layer 103 is used to solve the lattice constant mismatch problem between the two materials of the sapphire substrate 101 and the light-emitting unit.

[0136] To increase the probability of light emission from the substrate 100 and effectively improve the light extraction efficiency of the light-emitting chip, a patterned structure 102 is formed on the side of the sapphire substrate 101 facing the transition layer 103. The patterned structure 102 is fabricated on the sapphire substrate using a patterned mask and etching technology to create a periodic array pattern with a concave-convex structure at the micrometer or nanometer scale. In this application, inductively coupled plasma etching (ICP-C) can be used to fabricate a conical patterned structure on the sapphire substrate. The pattern spacing size of the micrometer-scale patterned structure is set to 3 to 4 micrometers, and the pattern spacing size of the nanometer-scale patterned structure is set to 1 to 2 micrometers.

[0137] In summary, the light-emitting chip provided in this application includes: a substrate, a light-emitting unit, a dimming film layer, and a first protective layer. By providing a first protective layer with high hardness on the side of the dimming film layer facing away from the substrate, the risk of mechanical damage to the dimming film layer can be effectively reduced. For example, during the process of connecting the light-emitting chip and the driving backplane using a needle-type die bonder, the first protective layer with high hardness can better withstand the pressing pressure applied by the pins in the needle-type die bonder, ensuring that the dimming film layer is less likely to be damaged by the pressing pressure applied by the pins, thereby effectively improving the light emission effect of the light-emitting chip.

[0138] This application also provides a method for manufacturing a light-emitting chip, which is used to manufacture the light-emitting chip shown in FIG10. The method for manufacturing the light-emitting chip includes:

[0139] Step S01: Provide a sapphire substrate 101. As shown in Figure 14, the sapphire substrate 101 undergoes annealing to improve its flatness and optical properties. Then, the annealed sapphire substrate 101 is trimmed by chamfering.

[0140] Step S02: Fabricate a patterned structure 102 on the sapphire substrate 101. As shown in Figure 15, a patterned structure 102 is formed on one side of the sapphire substrate 101 by using a patterned mask and etching technology. Fabricating a patterned structure 102 on the sapphire substrate 101 can effectively improve the light extraction efficiency of the light-emitting chip.

[0141] Step S03: Forming a transition layer 103. As shown in Figure 16, a transition layer 103 is formed on one side of the patterned structure 102 on the sapphire substrate 101 using metal-organic chemical vapor deposition (MOCVD).

[0142] Step S04: Forming a tensile epitaxial layer 201. As shown in Figure 17, a tensile epitaxial layer 201 is formed on the side of the transition layer 103 away from the sapphire substrate 101 using MOCVD.

[0143] Step S05: Forming the first semiconductor layer 202. As shown in FIG18, the first semiconductor layer 202 is formed on the side of the tensile epitaxial layer 201 away from the substrate 100 by MOCVD.

[0144] Step S06: Forming the light-emitting layer 203. As shown in FIG19, the light-emitting layer 203 is formed on the side of the first semiconductor layer 202 away from the substrate 100 by MOCVD.

[0145] Step S07: Forming the second semiconductor layer 204. As shown in FIG20, the second semiconductor layer 204 is formed on the side of the light-emitting layer 203 away from the substrate 100 using MOCVD.

[0146] Step S08: Forming a current blocking layer 205. As shown in Figure 21, a current blocking layer 205 is formed on the side of the second semiconductor layer 204 away from the substrate 100 using MOCVD.

[0147] Step S09: Forming the current spreading layer 206. As shown in Figure 22, the current spreading layer 206 is formed on the side of the current blocking layer 205 facing away from the substrate 100 using a sputtering process. At this point, a complete light-emitting unit 200 is formed.

[0148] Step S10: Forming an auxiliary insulating layer 900. As shown in Figure 23, an auxiliary insulating layer 900 is formed between two adjacent light-emitting units using photolithography and deposition processes.

[0149] Step S11: Forming the bridging electrode 800. As shown in Figure 24, an auxiliary insulating layer 900 is formed on the side of the auxiliary insulating layer 900 between two adjacent light-emitting units away from the substrate using photolithography and deposition processes, and overlaps with the two light-emitting units.

[0150] Step S12: Form the first connection electrode 1011 and the second connection electrode 1021. As shown in FIG25, the first connection electrode 1011 is formed on the side of the current extension layer 206 of the outermost light-emitting unit away from the substrate 100 using photolithography and deposition processes, and the second connection electrode 1021 is formed on the side of the first semiconductor layer 202 of the outermost light-emitting unit away from the substrate 100.

[0151] Step S13: Forming an insulating protective layer 600. As shown in Figure 26, an insulating protective layer 600 is formed on the side of the light-emitting unit away from the substrate 100 using photolithography and deposition processes.

[0152] Step S14: Forming the reflective film layer 500. As shown in Figure 27, the reflective film layer 500 is formed on the side of the insulating protective layer 600 opposite to the substrate 100 using a vapor deposition process.

[0153] Step S15: Forming the second protective layer 700. As shown in Figure 28, the second protective layer 700 is formed on the side of the reflective film layer 500 facing away from the substrate 100 using photolithography and deposition processes.

[0154] Step S16: Form the first welding electrode 1010 and the second welding electrode 1020. As shown in Figure 29, the first welding electrode 1010 is formed on the side of the second protective layer 700 away from the substrate 100 using a vapor deposition process. The first welding electrode 1010 sequentially penetrates the second protective layer 700, the reflective film layer 500, and the insulating protective layer 600 and overlaps with the first connecting electrode 1011. The second welding electrode 1010 is formed on the side of the second protective layer 700 away from the substrate 100 using a vapor deposition process. The first welding electrode 1010 sequentially penetrates the second protective layer 700, the reflective film layer 500, and the insulating protective layer 600 and overlaps with the second connecting electrode 1021.

[0155] Step S17: Forming a dimming film layer 300 and a first protective layer 400. As shown in Figure 10, a dimming film layer 300 is formed on the side of the substrate 100 opposite to the light-emitting unit 200 by evaporation and deposition processes.

[0156] It should be noted that when the hardness of the second inorganic layer 302 of the outermost dimming layer group 300a of the dimming film layer 300 is greater than that of the first inorganic layer 301, the first protective layer 400 and the second inorganic layer 302 of the outermost dimming layer group 300a are the same film layer, and it is not necessary to form a separate first protective layer 400. When the hardness of the second inorganic layer 302 of the outermost dimming layer group 300a of the dimming film layer 300 is less than that of the first inorganic layer 301, the first protective layer 400 needs to be formed on the side of the dimming film layer 300 facing away from the substrate 100.

[0157] It should also be noted that the light-emitting chip shown in Figure 10 can be formed through the above steps S01 to S17.

[0158] This application embodiment also provides a light-emitting substrate, which may include a driving backplane and a plurality of light-emitting chips 000 distributed on the driving backplane as shown in FIG. 1, FIG. 3, FIG. 5, FIG. 6 or FIG. 10. Since the dimming film layer 300 in the light-emitting chip 000 can increase the divergence angle of the emitted light from the light-emitting chip 000 to 155°–175°, the light-emitting substrate using this light-emitting chip 000 can reduce the number of light-emitting chips 000 used while avoiding problems such as lamp shadows and low resolution. That is, it replaces the scheme of one driving IC controlling multiple light-emitting chips 000 with a scheme of one driving IC controlling one light-emitting chip 000, thus reducing the cost of the light-emitting substrate. Furthermore, the increased divergence angle of the emitted light from the light-emitting chip 000 results in a smaller light mixing distance for the light-emitting substrate using this light-emitting chip 000, allowing the light-emitting substrate to be thinner and lighter.

[0159] This application also provides a display device, which can be any product or component with display function, such as a mobile phone, tablet computer, television, monitor, laptop computer, digital photo frame, or navigator. The display device may include the light-emitting substrate described in the above embodiments. Here, the light-emitting substrate can be used directly as a display panel or as a backlight panel. When the light-emitting substrate is used as a backlight panel, it needs to be positioned behind the liquid crystal display panel so that it can provide a light source for the liquid crystal display panel, thereby enabling the liquid crystal display panel to display the corresponding image.

[0160] It should be noted that the dimensions of layers and regions may be exaggerated in the accompanying drawings for clarity. Furthermore, it is understood that when an element or layer is referred to as being "on" another element or layer, it can be directly on the other element, or there may be intermediate layers. Additionally, it is understood that when an element or layer is referred to as being "below" another element or layer, it can be directly below the other element, or there may be more than one intermediate layer or element. Furthermore, it is also understood that when a layer or element is referred to as being "between" two layers or two elements, it can be the only layer between the two layers or two elements, or there may be more than one intermediate layer or element. Similar reference numerals throughout indicate similar elements.

[0161] In this application, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance. The term "multiple" refers to two or more unless otherwise expressly defined.

[0162] The above description is merely an optional embodiment of this application and is not intended to limit this application. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A light-emitting chip, characterized in that, include: Substrate (100), light-emitting unit (200), dimming film layer (300) and first protective layer (400); The light-emitting unit (200) is located on one side of the substrate (100), and the light-emitting side of the light-emitting unit faces the substrate (100); The dimming film layer (300) is located on the side of the substrate (100) away from the light-emitting unit (200), and the dimming film layer (300) is used to increase the divergence angle of the light emitted by the light-emitting unit (200) and transmitted through the substrate (100); The first protective layer (400) is located on the side of the dimming film layer (300) facing away from the substrate (100); The first protective layer (400) has a higher hardness than the dimming film layer (300).

2. The light-emitting chip according to claim 1, characterized in that, The dimming film layer (300) includes: multiple layers of first inorganic layer (301) and multiple layers of second inorganic layer (302) stacked together, wherein the multiple layers of first inorganic layer (301) and multiple layers of second inorganic layer (302) are arranged alternately; In the dimming film layer (300), a first inorganic layer (301) and a second inorganic layer (302) distributed adjacently are used to form a dimming layer group (300a). In the same dimming layer group (300a), the first inorganic layer (301) is closer to the substrate (100) than the second inorganic layer (302). The hardness of the first protective layer (400) is higher than that of at least one of the first inorganic layer (301) and the second inorganic layer (302).

3. The light-emitting chip according to claim 2, characterized in that, The hardness of the second inorganic layer (302) is higher than that of the first inorganic layer (301). The first protective layer (400) and the second inorganic layer (302) in the outermost dimming layer group (300a) are the same film layer.

4. The light-emitting chip according to claim 2, characterized in that, The first inorganic layer (301) has a higher hardness than the second inorganic layer (302). The first protective layer (400) is in contact with the second inorganic layer (302) in the outermost dimming layer group (300a). The material of the first protective layer (400) is the same as that of the first inorganic layer (301).

5. The light-emitting chip according to claim 2, characterized in that, The first protective layer (400) has a higher hardness than the first inorganic layer (301) and a higher hardness than the second inorganic layer (302). The first protective layer (400) is in contact with the second inorganic layer (302) in the outermost dimming layer group (300a).

6. The light-emitting chip according to claim 4 or 5, characterized in that, The thickness of the first protective layer (400) is greater than or equal to the thickness of the second inorganic layer (302) in the outermost dimming layer group (300a).

7. The light-emitting chip according to any one of claims 2 to 5, characterized in that, The material of the first protective layer (400) includes any one of niobium pentoxide, hafnium dioxide and zirconium oxide.

8. The light-emitting chip according to any one of claims 2 to 5, characterized in that, The number of dimming layer groups (300a) in the dimming film layer (300) ranges from 18 to 39.

9. The light-emitting chip according to any one of claims 2 to 5, characterized in that, The light-emitting chip further includes a reflective film layer (500), which is located on the side of the light-emitting unit (200) away from the substrate (100).

10. The light-emitting chip according to claim 9, characterized in that, A portion of the reflective film layer (500) is in contact with the side of the light-emitting unit (200) opposite to the substrate (100); Alternatively, the light-emitting chip may further include: an insulating protective layer (600) located on the side of the light-emitting unit (200) away from the substrate (100), and a portion of the insulating protective layer (600) in contact with the side of the light-emitting unit (200) away from the substrate (100), and the reflective film layer (500) located on the side of the insulating protective layer (600) away from the substrate (100).

11. The light-emitting chip according to claim 10, characterized in that, The light-emitting chip further includes: a second protective layer (700), the second protective layer (700) being located on the side of the reflective film layer (500) facing away from the substrate (100); The second protective layer (700) has a higher hardness than the reflective film layer (500).

12. The light-emitting chip according to any one of claims 1 to 5, characterized in that, The number of light-emitting units (200) is at least one, and the light-emitting unit (200) includes a first semiconductor layer (202), a light-emitting layer (203), a second semiconductor layer (204), a current blocking layer (205), and a current spreading layer (206) stacked in a direction perpendicular to and away from the substrate (100).

13. The light-emitting chip according to claim 12, characterized in that, When there are multiple light-emitting units (200), two adjacent light-emitting units (200) are respectively the first light-emitting unit (210) and the second light-emitting unit (220); The light-emitting chip also includes: a bridging electrode (800) and an auxiliary insulating layer (900); The two ends of the bridging electrode (800) are respectively connected to the first semiconductor layer (202) of the first light-emitting unit (210) and the current spreading layer (206) of the second light-emitting unit (220), and the auxiliary insulating layer (900) is located on the side of the bridging electrode (800) facing the substrate (100).

14. The light-emitting chip according to any one of claims 1 to 5, characterized in that, The light-emitting chip further includes a first welding electrode (1010) and a second welding electrode (1020), wherein the first welding electrode (1010) and the second welding electrode (1020) are both distributed on the side of the light-emitting unit (200) away from the substrate (100), and the first welding electrode (1010) and the second welding electrode (1020) are respectively connected to different positions of the light-emitting unit (200); The shape of the orthographic projection of the first welding electrode (1010) on the substrate (100) is different from the shape of the orthographic projection of the second welding electrode (1020) on the substrate (100).

15. A light-emitting substrate, characterized in that, include: A driving backplane, and a plurality of light-emitting chips distributed on the driving backplane, wherein the light-emitting chips are the light-emitting chips according to any one of claims 1 to 14.

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