Semiconductor device and vehicle

Abstract

A semiconductor device comprises a first upper arm switching element, a first lower arm switching element, a first upper arm control element, a first lower arm control element, a first main power supply lead, a main ground lead, a first output lead, a plurality of control leads, a first upper arm secondary-side control power supply lead, a first upper arm secondary-side control ground lead, and a sealing resin. The first main power supply lead, the main ground lead, the first output lead, the first upper arm secondary-side control power supply lead, and the first upper arm secondary-side control ground lead protrude from the sealing resin to a first side in a first direction. The plurality of control leads protrude from the sealing resin to a second side in the first direction.

Description

Semiconductor device and vehicle

[0001] The present disclosure relates to a semiconductor device and a vehicle.

[0002] Patent Document 1 discloses an example of a conventional semiconductor device. The semiconductor device disclosed in this document includes a plurality of semiconductor elements, a plurality of control elements, a plurality of leads, and a sealing resin. The plurality of semiconductor elements are switching elements. The plurality of control elements control the plurality of semiconductor elements. Each of the plurality of leads is electrically connected to one of the plurality of semiconductor elements or the plurality of control elements.

[0003] Japanese Patent Application Laid-Open No. 2022-123260

[0004] [Summary] There is an increasing demand for miniaturization of semiconductor devices.

[0005] An object of the present disclosure is to provide an improved semiconductor device compared to conventional semiconductor devices. In particular, in view of the above-mentioned circumstances, an object of the present disclosure is to provide a semiconductor device that can be miniaturized.

[0006] A semiconductor device provided by a first aspect of the present disclosure includes a first upper arm switching element and a first lower arm switching element, each having a first electrode and a second electrode through which a main current flows, and a third electrode to which a control signal controlling the conduction state of the first electrode and the second electrode is input, a first upper arm control element that outputs a control signal to the first upper arm switching element, a first lower arm control element that outputs a control signal to the first lower arm switching element, a first main power supply lead conducted to the first electrode of the first upper arm switching element, a main ground lead conducted to the second electrode of the first lower arm switching element, and a first output lead conducted to the second electrode of the first upper arm switching element and the first electrode of the first lower arm switching element, The power supply device comprises a plurality of control leads electrically connected to the first upper arm control element and the first lower arm control element, a first upper arm secondary side control power supply lead and a first upper arm secondary side control ground lead to which power is supplied so that the first upper arm control element outputs a control signal to the first upper arm switching element, and a sealing resin covering the first upper arm switching element, the first lower arm switching element, the first upper arm control element and the first lower arm control element, wherein the first main power supply lead, the main ground lead, the first output lead, the first upper arm secondary side control power supply lead and the first upper arm secondary side control ground lead protrude from the sealing resin to a first side in a first direction, and the plurality of control leads protrude from the sealing resin to a second side in the first direction.

[0007] A vehicle provided by a second aspect of the present disclosure comprises a drive system, a storage battery that supplies power to the drive system, an on-board charger that supplies power to the storage battery, and a semiconductor device provided by the first aspect of the present disclosure, wherein the semiconductor device is included in a circuit that constitutes the on-board charger.

[0008] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.

[0009] FIG. 1 is a perspective view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 2 is a partial perspective view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 3 is a plan view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 4 is a partial plan view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 5 is a bottom view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 6 is a partial bottom view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 7 is a partial side view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. 4. FIG. 9 is a partially enlarged cross-sectional view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 10 is a cross-sectional view taken along line X-X in FIG. 4. FIG. 11 is a cross-sectional view taken along line XI-XI in FIG. 4. FIG. 12 is a cross-sectional view taken along line XII-XII in FIG. 4. FIG. 13 is a cross-sectional view taken along line XIII-XIII in FIG. 4. FIG. 14 is a cross-sectional view taken along line XIV-XIV in FIG. 4. 15 is a cross-sectional view taken along line XV-XV in FIG. 4. FIG. 16 is a partially enlarged plan view showing the semiconductor device according to the first embodiment of the present disclosure. FIG. 17 is a partially enlarged cross-sectional view showing the semiconductor device according to the first embodiment of the present disclosure. FIG. 18 is a partially enlarged cross-sectional view showing the semiconductor device according to the first embodiment of the present disclosure. FIG. 19 is a block diagram showing the semiconductor device according to the first embodiment of the present disclosure. FIG. 20 is a block diagram showing a vehicle according to the first embodiment of the present disclosure. FIG. 21 is a partially enlarged cross-sectional view showing a first modified example of the semiconductor device according to the first embodiment of the present disclosure. FIG. 22 is a perspective view showing the semiconductor device according to the second embodiment of the present disclosure. FIG. 23 is a partial perspective view showing the semiconductor device according to the second embodiment of the present disclosure. FIG. 24 is a plan view showing the semiconductor device according to the second embodiment of the present disclosure. FIG. 25 is a partial plan view showing the semiconductor device according to the second embodiment of the present disclosure. FIG. 26 is a bottom view showing the semiconductor device according to the second embodiment of the present disclosure. FIG. 27 is a partial bottom view showing the semiconductor device according to the second embodiment of the present disclosure. FIG. 28 is a block diagram showing the semiconductor device according to the second embodiment of the present disclosure. FIG. 29 is a partial plan view showing a first modified example of the semiconductor device according to the second embodiment of the present disclosure.

[0010] DETAILED DESCRIPTION Preferred embodiments of the present disclosure will now be described in detail with reference to the drawings.

[0011] The terms "first," "second," "third," etc. in this disclosure are used for identification purposes only and are not intended to impose any ranking on their objects.

[0012] In this disclosure, unless otherwise specified, "a certain object A is formed on a certain object B" and "a certain object A is formed on a certain object B" include "a certain object A is formed directly on a certain object B" and "a certain object A is formed on a certain object B with another object interposed between the certain object A and the certain object B." Similarly, "a certain object A is disposed on a certain object B" and "a certain object A is disposed on a certain object B" include "a certain object A is disposed directly on a certain object B" and "a certain object A is disposed on a certain object B with another object interposed between the certain object A and the certain object B" unless otherwise specified. Similarly, "a certain object A is located on a certain object B" includes "a certain object A is located on a certain object B with a certain object A in contact with the certain object B" and "a certain object A is located on a certain object B with another object interposed between the certain object A and the certain object B." Unless otherwise specified, the phrase "an object A overlaps an object B when viewed in a certain direction" includes "an object A overlaps the entire object B" and "an object A overlaps a part of an object B." In the present disclosure, "a surface A faces in (one side or the other side of) direction B" is not limited to the case where the angle of surface A with respect to direction B is 90°, but also includes the case where surface A is tilted with respect to direction B.

[0013] 1 to 19 show a semiconductor device according to a first embodiment of the present disclosure. The semiconductor device A1 according to this embodiment includes a first upper arm switching element 11U, a first lower arm switching element 11L, a first upper arm control element 21U, a first lower arm control element 21L, a first main power supply lead 31, a main ground lead 33, a first output lead 35, a plurality of control leads 5, a first upper arm secondary-side control power supply lead 41U, a first upper arm secondary-side control ground lead 42U, and a sealing resin 9. The semiconductor device A1 may include a second upper arm switching element 12U, a second lower arm switching element 12L, a third upper arm switching element 13U, a third lower arm switching element 13L, a second upper arm control element 22U, a second lower arm control element 22L, a third upper arm control element 23U, a third lower arm control element 23L, a second main power supply lead 32, a second output lead 36, a third output lead 37, a lower arm secondary side control power supply lead 41L, a lower arm secondary side control ground lead 42L, a second upper arm secondary side control power supply lead 43U, a second upper arm secondary side control ground lead 44U, a third upper arm secondary side control power supply lead 45U, a third upper arm secondary side control ground lead 46U, a main board 6, a control board 7, and a thermistor 18. The semiconductor device A1 can realize a three-phase electric circuit.

[0014] The specific configuration and use of the semiconductor device A1 are not limited in any way, and it can be configured as an IPM (Intelligent Power Module), for example.

[0015] FIG. 1 is a perspective view showing the semiconductor device A1. FIG. 2 is a partial perspective view showing the semiconductor device A1. FIG. 3 is a plan view showing the semiconductor device A1. FIG. 4 is a partial plan view showing the semiconductor device A1. FIG. 5 is a bottom view showing the semiconductor device A1. FIG. 6 is a partial bottom view showing the semiconductor device A1. FIG. 7 is a partial side view showing the semiconductor device A1. FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. 4. FIG. 9 is a partially enlarged cross-sectional view showing the semiconductor device A1. FIG. 10 is a cross-sectional view taken along line X-X in FIG. 4. FIG. 11 is a cross-sectional view taken along line XI-XI in FIG. 4. FIG. 12 is a cross-sectional view taken along line XII-XII in FIG. 4. FIG. 13 is a cross-sectional view taken along line XIII-XIII in FIG. 4. FIG. 14 is a cross-sectional view taken along line XIV-XIV in FIG. 4. FIG. 15 is a cross-sectional view taken along line XV-XV in FIG. 4. FIG. 16 is a partially enlarged plan view showing the semiconductor device A1. Fig. 17 is a partially enlarged cross-sectional view showing the semiconductor device A1. Fig. 18 is a partially enlarged cross-sectional view showing the semiconductor device A1. Fig. 19 is a block diagram showing the semiconductor device A1. For ease of understanding, the sealing resin 9 is omitted from Figs. 2 and 16. In Figs. 4, 6, and 7, the sealing resin 9 is indicated by an imaginary line (two-dot chain line).

[0016] In these figures, the thickness direction of the present disclosure is defined as thickness direction z. A first side of thickness direction z is referred to as the z1 side, and a second side opposite the first side in the z direction is referred to as the z2 side. A direction perpendicular to thickness direction z is defined as first direction x. A first side of first direction x is referred to as the x1 side, and a second side opposite the x1 side is referred to as the x2 side. A direction perpendicular to thickness direction z and first direction x is defined as second direction y. A first side of second direction y is referred to as the y1 side, and a second side opposite the y1 side is referred to as the y2 side.

[0017] The first upper arm switching element 11U and the first lower arm switching element 11L may form a half-bridge circuit as shown in Fig. 19. The first upper arm switching element 11U may be included in the upper arm, and the first lower arm switching element 11L may be included in the lower arm. The first upper arm switching element 11U and the first lower arm switching element 11L may have a common configuration or different configurations. The first upper arm switching element 11U and the first lower arm switching element 11L are switching elements, and may be, for example, MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors), IGBTs (Insulated Gate Bipolar Transistors), or the like. In this embodiment, the first upper arm switching element 11U and the first lower arm switching element 11L may be MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) and may contain semiconductors such as SiC (silicon carbide), Si (silicon), GaN (gallium nitride) or the like as their main components, for example, containing SiC (silicon carbide).

[0018] 4 and 9 , each of the first upper-arm switching element 11U and the first lower-arm switching element 11L may have a first electrode 101, a second electrode 102, and a third electrode 103. A main current to be switched flows through the first electrode 101 and the second electrode 102. A control signal for controlling the conduction state of the first electrode 101 and the second electrode 102 is input to the third electrode 103. In this example, the first electrode 101 may be a drain electrode, the second electrode 102 may be a source electrode, and the third electrode 103 may be a gate electrode. In the illustrated example, the first electrode 101 is located on a second side z2 in the thickness direction z of the first upper-arm switching element 11U and the first lower-arm switching element 11L, and the second electrode 102 and the third electrode 103 are located on a first side z1 in the thickness direction z.

[0019] The second upper arm switching element 12U and the second lower arm switching element 12L may form a half-bridge circuit as shown in FIG. 19 . The second upper arm switching element 12U may be included in the upper arm, and the second lower arm switching element 12L may be included in the lower arm. The second upper arm switching element 12U and the second lower arm switching element 12L may have a common configuration with the first upper arm switching element 11U and the first lower arm switching element 11L, or may have a different configuration. In this embodiment, the second upper arm switching element 12U and the second lower arm switching element 12L have a common configuration with the first upper arm switching element 11U and the first lower arm switching element 11L.

[0020] The third upper arm switching element 13U and the third lower arm switching element 13L may form a half-bridge circuit as shown in FIG. 19 . The third upper arm switching element 13U may be included in the upper arm, and the third lower arm switching element 13L may be included in the lower arm. The third upper arm switching element 13U and the third lower arm switching element 13L may have a common configuration with the first upper arm switching element 11U and the first lower arm switching element 11L, or may have a different configuration. In this embodiment, the third upper arm switching element 13U and the third lower arm switching element 13L have a common configuration with the first upper arm switching element 11U and the first lower arm switching element 11L.

[0021] The first upper-arm control element 21U outputs a control signal to the third electrode 103 of the first upper-arm switching element 11U and controls the switching operation of the first upper-arm switching element 11U. The specific configuration of the first upper-arm control element 21U is not limited in any way. As shown in Fig. 19 , in this example, the first upper-arm control element 21U may have an insulating portion 200, a primary power supply electrode 201, a primary ground electrode 202, a primary control electrode 203, a secondary power supply electrode 205, a secondary ground electrode 206, and a secondary output electrode 207.

[0022] Insulating section 200 has, for example, a transformer structure including one or more sets of coils, and enables signal transmission and reception while insulating the primary side (input side) from the secondary side (output side). Insulating section 200 is not limited to a transformer structure and may be, for example, a capacitor. Primary side power supply electrode 201, primary side ground electrode 202, and primary side control electrode 203 form the primary side, while secondary side power supply electrode 205, secondary side ground electrode 206, and secondary side output electrode 207 form the secondary side.

[0023] The primary-side power supply electrode 201 and the primary-side ground electrode 202 are electrodes to which power is supplied for implementing primary-side signal processing and the like in the first upper-arm control element 21U. The voltage supplied to the primary-side power supply electrode 201 may be, for example, 1.8 V, 3.3 V, 5.0 V, etc. A control signal that forms the basis for controlling the first upper-arm switching element 11U is input to the primary-side control electrode 203.

[0024] The secondary-side power supply electrode 205 and the secondary-side ground electrode 206 are supplied with power for the first upper-arm control element 21U to output a control signal to the third electrode 103 of the first upper-arm switching element 11U. The voltage supplied to the secondary-side power supply electrode 205 varies depending on the specific type and specifications of the first upper-arm switching element 11U, and is higher than the voltage supplied to the primary-side power supply electrode 201, for example. The secondary-side output electrode 207 is an electrode from which a control signal to the third electrode 103 of the first upper-arm switching element 11U is output.

[0025] The first lower arm control element 21L, the second upper arm control element 22U, the second lower arm control element 22L, the third upper arm control element 23U, and the third lower arm control element 23L output control signals to third electrodes 103 of the first lower arm switching element 11L, the second upper arm switching element 12U, the second lower arm switching element 12L, the third upper arm switching element 13U, and the third lower arm switching element 13L, respectively, and control the switching operations of the first lower arm switching element 11L, the second upper arm switching element 12U, the second lower arm switching element 12L, the third upper arm switching element 13U, and the third lower arm switching element 13L. The first lower arm control element 21L, the second upper arm control element 22U, the second lower arm control element 22L, the third upper arm control element 23U, and the third lower arm control element 23L may have a common configuration with the first upper arm control element 21U, or may have a different configuration. In this example, the first lower arm control element 21L, the second upper arm control element 22U, the second lower arm control element 22L, the third upper arm control element 23U and the third lower arm control element 23L have the same configuration as the first upper arm control element 21U.

[0026] The first upper arm switching element 11U and the first lower arm switching element 11L are mounted on the main substrate 6. The second upper arm switching element 12U, the second lower arm switching element 12L, the third upper arm switching element 13U, and the third lower arm switching element 13L may also be mounted on the main substrate 6. The semiconductor device according to the present disclosure is not limited to a configuration including the main substrate 6, and may be configured without the main substrate 6.

[0027] As shown in FIGS. 4 to 14 , the main substrate 6 may include an insulating layer 60, a first conductive layer 61, and a second conductive layer 62. The insulating layer 60 is a plate-shaped member containing an insulating material such as ceramics. The first conductive layer 61 is located on a first side z1 of the insulating layer 60 in the thickness direction z. The first conductive layer 61 may include a metal such as copper (Cu) or nickel (Ni) or an alloy thereof. The second conductive layer 62 is located on a second side z2 of the insulating layer 60 in the thickness direction z. The second conductive layer 62 may include a metal such as copper (Cu) or nickel (Ni) or an alloy thereof. A main substrate 6 having such a configuration may be, for example, an active metal brazing (AMB) substrate or a direct bonded copper (DBC) substrate. The main substrate 6 may further include an intermediate conductive layer located between the first conductive layer 61 and the second conductive layer 62 in the thickness direction z, sandwiching a portion of the insulating layer 60 therebetween. In this case, the configuration of the first conductive layer 61, such as its shape, may differ from that of this example.

[0028] The first conductive layer 61 may include a first main power supply section 611 , a second main power supply section 612 , a main ground section 613 , a first output section 615 , a second output section 616 , a third output section 617 , a first temperature measuring section 618 and a second temperature measuring section 619 .

[0029] The first main power supply unit 611 is located in a region on a first side x1 in the first direction x of the insulating layer 60. The second main power supply unit 612 is located on a second side y2 in the second direction y with respect to the first main power supply unit 611. In the illustrated example, the second main power supply unit 612 is larger than the first main power supply unit 611. The main ground unit 613 includes a portion located on the second side y2 in the second direction y with respect to the second main power supply unit 612. The first output unit 615 is located on a first side y1 in the second direction y with respect to the first main power supply unit 611. The second output unit 616 is located between the second main power supply unit 612 and the main ground unit 613 in the second direction y. The third output unit 617 is located between the second main power supply unit 612 and the main ground unit 613 in the second direction y.

[0030] In the illustrated example, the main ground portion 613 includes a base portion 6131 and an extending portion 6132. The base portion 6131 is located on a first side x1 in the first direction x of the insulating layer 60, and is located on a second side y2 in the second direction y with respect to the third output portion 617. The extending portion 6132 has a shape that extends in the second direction y. In the illustrated example, the extending portion 6132 is located on a second side x2 in the first direction x with respect to the first main power supply portion 611, the second main power supply portion 612, the second output portion 616, and the third output portion 617.

[0031] The first temperature measuring unit 618 and the second temperature measuring unit 619 are located on the second side x2 in the first direction x with respect to the first output unit 615. The first temperature measuring unit 618 and the second temperature measuring unit 619 are arranged side by side and spaced apart in the first direction x.

[0032] The second conductive layer 62 covers most of one surface on the second side z2 in the thickness direction z of the insulating layer 60. The second conductive layer 62 may be exposed from the sealing resin 9.

[0033] The first electrode 101 of the first upper arm switching element 11U is conductively joined to the first main power supply unit 611. The first electrode 101 of the first upper arm switching element 11U may be conductively joined to the first main power supply unit 611 via, for example, a conductive bonding material 19. The conductive bonding material 19 may be, for example, solder, silver paste, or the like. Alternatively, the first electrode 101 of the first upper arm switching element 11U may be solid-state diffusion bonded to the first main power supply unit 611.

[0034] The first electrodes 101 of the second upper arm switching element 12U and the third upper arm switching element 13U are conductively joined to the second main power supply unit 612. The first electrodes 101 of the second upper arm switching element 12U and the third upper arm switching element 13U of the second main power supply unit 612 may be conductively joined to the first main power supply unit 611 via, for example, a conductive bonding material 19. Alternatively, the first electrodes 101 of the second upper arm switching element 12U and the third upper arm switching element 13U may be solid-state diffusion bonded to the first main power supply unit 611.

[0035] One or more wires 82 are joined to the main ground portion 613. The main ground portion 613 is electrically connected to the second electrodes 102 of the first lower arm switching element 11L, the second lower arm switching element 12L, and the third lower arm switching element 13L via the one or more wires 82. The wires 82 may contain, for example, a metal such as Al (aluminum), Au (gold), or Cu (copper) or an alloy thereof. Instead of the wires 82, other conductive members such as a metal plate member may be used.

[0036] The first electrode 101 of the first lower-arm switching element 11L is conductively joined to the first output section 615. The first electrode 101 of the first lower-arm switching element 11L may be conductively joined to the first output section 615, for example, via a conductive bonding material 19. Alternatively, the first electrode 101 of the first lower-arm switching element 11L may be solid-state diffusion bonded to the first output section 615. One or more wires 81 are bonded to the first output section 615. The first output section 615 is conductively connected to the second electrode 102 of the first upper-arm switching element 11U via the one or more wires 81. The wires 81 may include, for example, a metal such as Al (aluminum), Au (gold), or Cu (copper) or an alloy thereof. Another conductive member, such as a metal plate, may be used instead of the wires 81.

[0037] The first electrode 101 of the second lower arm switching element 12L is conductively joined to the second output portion 616. The first electrode 101 of the second lower arm switching element 12L may be conductively joined to the second output portion 616, for example, via a conductive bonding material 19. Alternatively, the first electrode 101 of the second lower arm switching element 12L may be solid-state diffusion bonded to the second output portion 616. One or more wires 81 are bonded to the second output portion 616. The second output portion 616 is conductively connected to the second electrode 102 of the second upper arm switching element 12U via the one or more wires 81.

[0038] The first electrode 101 of the third lower arm switching element 13L is conductively joined to the third output portion 617. The first electrode 101 of the third lower arm switching element 13L may be conductively joined to the second output portion 616, for example, via a conductive bonding material 19. Alternatively, the first electrode 101 of the third lower arm switching element 13L may be solid-state diffusion bonded to the third output portion 617. One or more wires 81 are bonded to the third output portion 617. The third output portion 617 is conductively connected to the second electrode 102 of the third upper arm switching element 13U via the one or more wires 81.

[0039] The thermistor 18 is electrically connected to the first temperature measuring unit 618 and the second temperature measuring unit 619. The thermistor 18 is used to monitor the temperature of the main board 6 and the like when the semiconductor device A1 is in operation.

[0040] 2, 4, 7, 8, and 10 to 15, the control board 7 is mounted with a first upper arm control element 21U, a first lower arm control element 21L, and a plurality of electronic components 25. The control board 7 may also be mounted with a second upper arm control element 22U, a second lower arm control element 22L, a third upper arm control element 23U, and a third lower arm control element 23L.

[0041] The specific configuration of the control board 7 is not limited in any way. The semiconductor device of the present disclosure may be configured without the control board 7. As shown in FIGS. 2, 4, 6 to 8, and 10 to 15, the control board 7 has a main surface 7a and a back surface 7b. The main surface 7a faces a first side z1 in the thickness direction z. The back surface 7b faces a second side z2 in the thickness direction z. The first upper arm control element 21U, the first lower arm control element 21L, or any of the plurality of electronic components 25 are mounted on the main surface 7a. The first upper arm control element 21U, the first lower arm control element 21L, or any of the plurality of electronic components 25 are mounted on the back surface 7b.

[0042] In the illustrated example, the first upper arm control element 21U and the first lower arm control element 21L are mounted on the main surface 7a. The plurality of electronic components 25 are mounted on the back surface 7b. The second upper arm control element 22U, the second lower arm control element 22L, the third upper arm control element 23U, and the third lower arm control element 23L are mounted on the main surface 7a. Unlike the illustrated example, any or all of the first upper arm control element 21U, the first lower arm control element 21L, the second upper arm control element 22U, the second lower arm control element 22L, the third upper arm control element 23U, and the third lower arm control element 23L may be mounted on the back surface 7b. Any or all of the plurality of electronic components 25 may be mounted on the main surface 7a.

[0043] As shown in FIGS. 17 and 18 , the control board 7 may have one or more first insulating layers 701, one or more second insulating layers 702, a main surface conductive layer 711, a back surface conductive layer 712, and one or more intermediate conductive layers 713. In the illustrated example, the control board 7 has a first insulating layer 701, two second insulating layers 702, a main surface conductive layer 711, a back surface conductive layer 712, and two intermediate conductive layers 713. The specific layered structure of the control board 7 is not limited in any way. For example, the control board 7 may have a layered structure including multiple second insulating layers 702 located on both sides of the first insulating layer 701 in the thickness direction z. Alternatively, the control board 7 may have a layered structure including multiple first insulating layers 701. An intermediate conductive layer 713 may be provided between the multiple second insulating layers 702 or the multiple first insulating layers 701.

[0044] The first insulating layer 701 and the two second insulating layers 702 each contain an insulating material and are stacked in the thickness direction z. The two second insulating layers 702 are located on either side of the first insulating layer 701 in the thickness direction z. The insulating material contained in the first insulating layer 701 is not limited in any way, and for example, a material harder than the insulating material contained in each of the second insulating layers 702 can be used. Examples of the insulating material contained in the first insulating layer 701 include resin. Examples of the insulating material contained in each of the second insulating layers 702 include resin. The thickness of the first insulating layer 701 may be thicker or thinner than the thickness of each of the second insulating layers 702, or may be approximately the same.

[0045] The main surface conductive layer 711, the back surface conductive layer 712, and the two intermediate conductive layers 713 are conductive and may contain a metal such as Cu (copper), Ni (nickel), or Au (gold) or an alloy thereof. The main surface conductive layer 711 is located on a first side z1 in the thickness direction z relative to the second insulating layer 702, which is located on a first side z1 in the thickness direction z. The back surface conductive layer 712 is located on a second side z2 in the thickness direction z relative to the second insulating layer 702, which is located on a second side z2 in the thickness direction z. Each of the two intermediate conductive layers 713 is located between the first insulating layer 701 and one of the two second insulating layers 702. The control board 7 may include through-hole conductive portions (not shown) for appropriately connecting the main surface conductive layer 711, the back surface conductive layer 712, and the two intermediate conductive layers 713 at appropriate locations. The thickness of the main surface conductive layer 711 and the back surface conductive layer 712 may be thicker or thinner than the thickness of each intermediate conductive layer 713, or may be approximately the same.

[0046] As shown in Figures 1, 4, 6, 7, 17, and 18, the control board 7 may have one or more first side surfaces 7c and one or more second side surfaces 7d. In the illustrated example, the control board 7 includes two first side surfaces 7c and multiple second side surfaces 7d. The two first side surfaces 7c are located on either side of the second direction y and face a direction intersecting the thickness direction z. The multiple second side surfaces 7d are the sides other than the two first side surfaces 7c among the multiple side surfaces facing a direction intersecting the thickness direction z.

[0047] 17 , the first side surface 7c includes an inclined portion located on a first side z1 in the thickness direction z and an upright portion located on a second side z2 in the thickness direction z. The inclined portion may be, for example, a trace of a V-shaped cross-sectional groove formed in the substrate material used to form the control board 7. The upright portion may be a portion that was broken by bending or the like when cutting the control board 7 from the substrate material. In another aspect, the first side surface 7c may have a V-shaped cross-sectional shape with two inclined portions located on both sides in the thickness direction z.

[0048] As shown in FIG. 18 , the second side surface 7d may have an uneven shape. In the illustrated example, the second side surface 7d may be wavy, folded, or wedge-shaped. The second side surface 7d may be formed, for example, by subjecting the substrate material used to form the control board 7 to a cutting process or the like. The uneven shape of the second side surface 7d is presumed to be due to various factors, such as a difference in the amount of deflection when subjected to a cutting process or the like due to a difference in hardness between the first insulating layer 701 and the second insulating layer 702. In the illustrated example, the first insulating layer 701 is bulging, and the second insulating layer 702 is recessed.

[0049] 16 shows a specific example of the configuration of the main surface conductive layer 711. In the example shown, the main surface conductive layer 711 includes a plurality of pad portions 7111 and a plurality of wiring portions 7112. Each of the plurality of pad portions 7111 is a portion on which, for example, an electronic component 25 is mounted. Each of the plurality of wiring portions 7112 forms a conductive path for electrically connecting any of the plurality of pad portions 7111 to another appropriate location on the main surface conductive layer 711.

[0050] The control board 7 may include a plurality of covering portions 73. Each of the plurality of covering portions 73 may have insulating properties and may be formed, for example, from a resist film, a stamping ink, or the like. The plurality of covering portions 73 may include a plurality of first covering portions 731 and a plurality of second covering portions 732. The plurality of first covering portions 731 are located close to one of the plurality of pad portions 7111. The plurality of second covering portions 732 are located on the opposite side of one of the plurality of first covering portions 731 from the plurality of pad portions 7111. There is no pad portion 7111 between the first covering portion 731 and the second covering portion 732. There is no pad portion 7111 between adjacent second covering portions 732.

[0051] The control board 7 may have support leads 78 and support leads 79. The support leads 78 and support leads 79 are fixed near both ends of the main surface 7a in the second direction y. Various techniques such as bonding, engagement, and fitting may be used to fix the support leads 78 and support leads 79. For example, in a manufacturing method of the semiconductor device A1, the support leads 78 and support leads 79 may be used for the purpose of making it possible to support the control board 7 via a lead frame (not shown) by fixing the support leads 78 and support leads 79, which form part of the lead frame, to the control board 7. This lead frame may include, for example, a plurality of control leads 5, etc.

[0052] In this embodiment, the third electrodes 103 of the first upper arm switching element 11U, the first lower arm switching element 11L, the second upper arm switching element 12U, the second lower arm switching element 12L, the third upper arm switching element 13U, and the third lower arm switching element 13L are individually connected to appropriate positions on the main surface conductive layer 711 by a plurality of wires 83. The first temperature measuring unit 618 and the second temperature measuring unit 619 are individually connected to appropriate positions on the main surface conductive layer 711 by two wires 88.

[0053] The sealing resin 9 covers the first upper arm switching element 11U, the first lower arm switching element 11L, the second upper arm switching element 12U, the second lower arm switching element 12L, the third upper arm switching element 13U, the third lower arm switching element 13L, the first upper arm control element 21U, the first lower arm control element 21L, the second upper arm control element 22U, the second lower arm control element 22L, the third upper arm control element 23U, and the third lower arm control element 23L. The sealing resin 9 may cover a portion of the main substrate 6. The sealing resin 9 may cover the control substrate 7. In this embodiment, it is preferable that the material, such as resin, that constitutes the control substrate 7 has a glass transition point that is higher than the resin molding temperature of the sealing resin 9. The sealing resin 9 can cover the first main power supply lead 31, the second main power supply lead 32, the main ground lead 33, the first output lead 35, the second output lead 36, the third output lead 37, the first upper arm secondary side control power supply lead 41U, the first upper arm secondary side control ground lead 42U, the second upper arm secondary side control power supply lead 43U, the second upper arm secondary side control ground lead 44U, the third upper arm secondary side control power supply lead 45U, the third upper arm secondary side control ground lead 46U, the lower arm secondary side control power supply lead 41L, the lower arm secondary side control ground lead 42L and a portion of each of the multiple control leads 5.

[0054] The sealing resin 9 includes an insulating resin such as an epoxy resin, and may have a resin main surface 91, a resin back surface 92, a resin first side surface 93, a resin second side surface 94, a resin third side surface 95, and a resin fourth side surface 96, as shown in FIGS.

[0055] The resin main surface 91 faces a first side z1 in the thickness direction z. The resin back surface 92 faces a second side z2 in the thickness direction z. The resin first side surface 93 faces a first side x1 in the first direction x. The resin second side surface 94 faces a second side x2 in the first direction x. The resin third side surface 95 faces a first side y1 in the second direction y. The resin fourth side surface 96 faces a second side y2 in the second direction y. The resin main surface 91, the resin back surface 92, the resin first side surface 93, the resin second side surface 94, the resin third side surface 95, and the resin fourth side surface 96 may have various shapes, such as flat, curved, or bent surfaces. The second conductive layer 62 may be exposed from the resin back surface 92.

[0056] The sealing resin 9 may have a plurality of first recesses 911 , a plurality of second recesses 921 , a third recess 931 , a fourth recess 941 , a fifth recess 951 and a sixth recess 961 .

[0057] The first recesses 911 are recessed from the first resin side surface 93 toward the second side x2 in the first direction x and are spaced apart from each other in the second direction y. The second recesses 921 are recessed from the second resin side surface 94 toward the first side x1 in the first direction x and are spaced apart from each other in the second direction y.

[0058] The third recess 931 is recessed from the resin third side surface 95 to the second side y2 in the second direction y. The fourth recess 941 is recessed from the resin fourth side surface 96 to the first side y1 in the second direction y. The fifth recess 951 is recessed from the resin third side surface 95 to the second side y2 in the second direction y, and is located on the second side x2 in the first direction x with respect to the third recess 931. The sixth recess 961 is recessed from the resin fourth side surface 96 to the first side y1 in the second direction y, and is located on the second side x2 in the first direction x with respect to the fourth recess 941.

[0059] In this example, the support lead 78 can protrude from the fifth recess 951. The support lead 79 can protrude from the sixth recess 961.

[0060] The first main power supply lead 31, the second main power supply lead 32, the main ground lead 33, the first output lead 35, the second output lead 36, and the third output lead 37 may contain, for example, a metal such as Cu (copper), Ni (nickel), or Fe (iron), or an alloy thereof. The first main power supply lead 31, the second main power supply lead 32, the main ground lead 33, the first output lead 35, the second output lead 36, and the third output lead 37 may be formed, for example, using a lead frame (not shown).

[0061] 4, 10, and 19, the first main power lead 31 is electrically connected to the first electrode 101 of the first upper-arm switching element 11U. The first main power lead 31 protrudes from the first resin side surface 93 of the sealing resin 9 toward the first side x1 in the first direction x. The first main power lead 31 has a terminal portion 301 and a joint portion 302. The terminal portion 301 of the first main power lead 31 is located outside the sealing resin 9 and extends along the thickness direction z in the illustrated example. The joint portion 302 of the first main power lead 31 is electrically connected to the first main power supply portion 611.

[0062] 4, 12, and 19, the second main power lead 32 is electrically connected to the first electrode 101 of the second upper arm switching element 12U. The second main power lead 32 protrudes from the first resin side surface 93 of the sealing resin 9 toward the first side x1 in the first direction x. The second main power lead 32 has a terminal portion 301 and a joint portion 302. The terminal portion 301 of the second main power lead 32 is located outside the sealing resin 9 and extends along the thickness direction z in the illustrated example. The joint portion 302 of the second main power lead 32 is electrically connected to the second main power supply portion 612.

[0063] 4 , 13 , and 19 , the main ground lead 33 is electrically connected to the first electrode 101 of the third upper arm switching element 13U. The main ground lead 33 protrudes from the first resin side surface 93 of the sealing resin 9 toward the first side x1 in the first direction x. The main ground lead 33 has a terminal portion 301 and a joint portion 302. The terminal portion 301 of the main ground lead 33 is located outside the sealing resin 9 and extends along the thickness direction z in the illustrated example. The joint portion 302 of the main ground lead 33 is electrically connected to the base portion 6131 of the main ground portion 613.

[0064] 4, 8, and 19, the first output lead 35 is electrically connected to the second electrode 102 of the first upper-arm switching element 11U and the first electrode 101 of the first lower-arm switching element 11L. The first output lead 35 protrudes from the first resin side surface 93 of the sealing resin 9 toward the first side x1 in the first direction x. The first output lead 35 has a terminal portion 301 and a joint portion 302. The terminal portion 301 of the first output lead 35 is located outside the sealing resin 9 and extends along the thickness direction z in the illustrated example. The joint portion 302 of the first output lead 35 is electrically connected to the first output portion 615.

[0065] 4 , 11 , and 19 , the second output lead 36 is electrically connected to the second electrode 102 of the second upper arm switching element 12U and the first electrode 101 of the second lower arm switching element 12L. The second output lead 36 protrudes from the first resin side surface 93 of the sealing resin 9 toward the first side x1 in the first direction x. The second output lead 36 has a terminal portion 301 and a joint portion 302. The terminal portion 301 of the second output lead 36 is located outside the sealing resin 9 and extends along the thickness direction z in the illustrated example. The joint portion 302 of the second output lead 36 is electrically connected to the second output portion 616.

[0066] 4 , 13 , and 19 , the third output lead 37 is electrically connected to the second electrode 102 of the third upper arm switching element 13U and the first electrode 101 of the third lower arm switching element 13L. The third output lead 37 protrudes from the first resin side surface 93 of the sealing resin 9 toward the first side x1 in the first direction x. The third output lead 37 has a terminal portion 301 and a joint portion 302. The terminal portion 301 of the third output lead 37 is located outside the sealing resin 9 and extends along the thickness direction z in the illustrated example. The joint portion 302 of the third output lead 37 is electrically connected to the third output portion 617.

[0067] 19 , the first upper arm secondary control power supply lead 41U and the first upper arm secondary control ground lead 42U are leads that supply power for the first upper arm control element 21U to output a control signal to the first upper arm switching element 11U. The first upper arm secondary control power supply lead 41U is electrically connected to the secondary power supply electrode 205 of the first upper arm control element 21U. The first upper arm secondary control ground lead 42U is electrically connected to the secondary power supply electrode 205 of the first upper arm control element 21U. As shown in FIG. 4 , the first upper arm secondary control power supply lead 41U and the first upper arm secondary control ground lead 42U protrude from a first resin side surface 93 of the sealing resin 9 toward a first side x1 in the first direction x. The first upper arm secondary control power lead 41U and the first upper arm secondary control ground lead 42U are electrically connected to appropriate locations on the main surface conductive layer 711 of the control board 7 via multiple wires 85, and are individually electrically connected to the secondary power electrode 205 and the secondary ground electrode 206 of the first upper arm control element 21U via appropriate locations on the main surface conductive layer 711. Similar to the lower arm secondary control power lead 41L shown in FIG. 7 , the first upper arm secondary control power lead 41U and the first upper arm secondary control ground lead 42U may have a terminal portion 401 and a pad portion 402. The terminal portion 401 is located outside the sealing resin 9 and extends along the thickness direction z in the illustrated example. The pad portion 402 is covered by the sealing resin 9, and a wire 85 is connected to the pad portion 402.

[0068] 19 , the lower-arm secondary control power supply lead 41L and the lower-arm secondary control ground lead 42L are leads through which power is supplied for the first lower-arm control element 21L to output a control signal to the first lower-arm switching element 11L. Furthermore, in this embodiment, the lower-arm secondary control power supply lead 41L and the lower-arm secondary control ground lead 42L may be leads through which power is supplied for the second lower-arm control element 22L and the third lower-arm control element 23L to output a control signal to the second lower-arm switching element 12L and the third lower-arm switching element 13L. The lower-arm secondary control power supply lead 41L is electrically connected to the secondary power supply electrodes 205 of the first lower-arm control element 21L, the second lower-arm control element 22L, and the third lower-arm control element 23L. The lower-arm secondary control ground lead 42L is electrically connected to the secondary ground electrodes 206 of the first lower-arm control element 21L, the second lower-arm control element 22L, and the third lower-arm control element 23L. As shown in FIG. 4 , the lower-arm secondary control power supply lead 41L and the lower-arm secondary control ground lead 42L protrude from a first resin side surface 93 of the sealing resin 9 toward a first side x1 in the first direction x. The lower-arm secondary control power supply lead 41L and the lower-arm secondary control ground lead 42L are electrically connected to appropriate locations on the main surface conductive layer 711 of the control board 7 via multiple wires 86, and are individually electrically connected to the secondary power supply electrodes 205 and the secondary ground electrodes 206 of the first lower-arm control element 21L, the second lower-arm control element 22L, and the third lower-arm control element 23L via appropriate locations on the main surface conductive layer 711. The lower arm secondary-side control power lead 41L and the lower arm secondary-side control ground lead 42L may have a terminal portion 401 and a pad portion 402. The terminal portion 401 is located outside the sealing resin 9 and extends along the thickness direction z in the illustrated example. The pad portion 402 is covered with the sealing resin 9 and is connected to a wire 86.

[0069] 19 , the second upper arm secondary control power supply lead 43U and the second upper arm secondary control ground lead 44U are leads that supply power for the second upper arm control element 22U to output a control signal to the second upper arm switching element 12U. The second upper arm secondary control power supply lead 43U is electrically connected to the secondary power supply electrode 205 of the second upper arm control element 22U. The second upper arm secondary control ground lead 44U is electrically connected to the secondary power supply electrode 205 of the second upper arm control element 22U. As shown in FIG. 4 , the second upper arm secondary control power supply lead 43U and the second upper arm secondary control ground lead 44U protrude from the first resin side surface 93 of the sealing resin 9 toward the second side x2 in the first direction x. The second upper arm secondary control power lead 43U and the second upper arm secondary control ground lead 44U are electrically connected to appropriate locations on the main surface conductive layer 711 of the control board 7 via multiple wires 85, and are individually electrically connected to the secondary power electrode 205 and the secondary ground electrode 206 of the second upper arm control element 22U via appropriate locations on the main surface conductive layer 711. Similar to the lower arm secondary control power lead 41L shown in FIG. 7 , the second upper arm secondary control power lead 43U and the second upper arm secondary control ground lead 44U may have a terminal portion 401 and a pad portion 402. The terminal portion 401 is located outside the sealing resin 9 and extends along the thickness direction z in the illustrated example. The pad portion 402 is covered by the sealing resin 9, and a wire 85 is connected to the pad portion 402.

[0070] 19 , the third upper arm secondary control power supply lead 45U and the third upper arm secondary control ground lead 46U are leads that supply power for the third upper arm control element 23U to output a control signal to the third upper arm switching element 13U. The third upper arm secondary control power supply lead 45U is electrically connected to the secondary power supply electrode 205 of the third upper arm control element 23U. The third upper arm secondary control ground lead 46U is electrically connected to the secondary power supply electrode 205 of the third upper arm control element 23U. As shown in FIG. 4 , the third upper arm secondary control power supply lead 45U and the third upper arm secondary control ground lead 46U protrude from the first resin side surface 93 of the sealing resin 9 toward the second side x2 in the first direction x. The third upper arm secondary control power lead 45U and the third upper arm secondary control ground lead 46U are electrically connected to appropriate locations on the main surface conductive layer 711 of the control board 7 via multiple wires 85, and are individually electrically connected to the secondary power electrode 205 and the secondary ground electrode 206 of the third upper arm control element 23U via appropriate locations on the main surface conductive layer 711. Similar to the lower arm secondary control power lead 41L shown in FIG. 7 , the third upper arm secondary control power lead 45U and the third upper arm secondary control ground lead 46U may have a terminal portion 401 and a pad portion 402. The terminal portion 401 is located outside the sealing resin 9 and extends along the thickness direction z in the illustrated example. The pad portion 402 is covered by the sealing resin 9, and a wire 85 is connected to the pad portion 402.

[0071] As shown in FIGS. 3 and 4 , the control leads 5 protrude from the sealing resin 9 toward the second side x2 in the first direction x. As shown in FIG. 19 , the control leads 5 are electrically connected to electrodes on the primary sides of the first upper arm control element 21U, the first lower arm control element 21L, the second upper arm control element 22U, the second lower arm control element 22L, the third upper arm control element 23U, and the third lower arm control element 23L. In this embodiment, the control leads 5 may include a primary side control power supply lead 51, a primary side control ground lead 52, and multiple control leads 531 to 53b. As illustrated in FIGS. 8 and 10 to 13 , each of the control leads 5 may include a terminal portion 501 and a pad portion 502. The terminal portion 501 is located outside the sealing resin 9 and extends along the thickness direction z in the illustrated example. The pad portion 502 is covered by the sealing resin 9, and a wire 87 may be connected to the pad portion 502.

[0072] The primary side control power supply lead 51 and the primary side control ground lead 52 are leads through which power is input to the primary sides of the first upper arm control element 21U, the first lower arm control element 21L, the second upper arm control element 22U, the second lower arm control element 22L, the third upper arm control element 23U, and the third lower arm control element 23L. The primary side control power supply lead 51 and the primary side control ground lead 52 are electrically connected to the primary side power supply electrodes 201 and the primary side ground electrodes 202 of the first upper arm control element 21U, the first lower arm control element 21L, the second upper arm control element 22U, the second lower arm control element 22L, the third upper arm control element 23U, and the third lower arm control element 23L, respectively.

[0073] The control lead 531 is electrically connected to the primary control electrode 203 of the first upper-arm switching element 11U. The control lead 532 is electrically connected to the primary control electrode 203 of the first lower-arm control element 21L. The control lead 533 is electrically connected to the primary control electrode 203 of the second upper-arm control element 22U. The control lead 534 is electrically connected to the primary control electrode 203 of the second lower-arm control element 22L. The control lead 535 is electrically connected to the primary control electrode 203 of the third upper-arm control element 23U. The control lead 536 is electrically connected to the primary control electrode 203 of the third lower-arm control element 23L.

[0074] The control lead 537 , the control lead 538 , the control lead 539 and the control lead 53 a are electrically connected to the primary side control ground lead 52 .

[0075] The control leads 53 b and 53 c are electrically connected to the thermistor 18 .

[0076] During operation of semiconductor device A1, the voltages of first upper arm secondary control power supply lead 41U, first upper arm secondary control ground lead 42U, second upper arm secondary control power supply lead 43U, second upper arm secondary control ground lead 44U, third upper arm secondary control power supply lead 45U, and third upper arm secondary control ground lead 46U are not particularly limited. The voltages of first output lead 35, second output lead 36, and third output lead 37 are higher than the voltage of first upper arm secondary control power supply lead 41U, etc. The voltages of first main power supply lead 31 and second main power supply lead 32 are higher than the voltages of first output lead 35, second output lead 36, and third output lead 37, for example, by several hundred volts. The voltages of lower arm secondary control power supply lead 41L and lower arm secondary control ground lead 42L can be set to ground potential, for example.

[0077] As shown in FIG. 4 , the first upper arm secondary control power lead 41U and the first upper arm secondary control ground lead 42U are located on a first side y1 relative to the first output lead 35 in the second direction y. The first upper arm secondary control ground lead 42U may be located between the first upper arm secondary control power lead 41U and the first output lead 35 in the second direction y. The first main power lead 31 is located on a second side y2 relative to the first output lead 35 in the second direction y. The main ground lead 33 is located on a second side y2 relative to the first main power lead 31 in the second direction y. The second main power lead 32 is located between the first main power lead 31 and the main ground lead 33 in the second direction y. The second output lead 36 is located between the first main power lead 31 and the second main power lead 32 in the second direction y. The third output lead 37 is located between the second main power lead 32 and the main ground lead 33 in the second direction y. The lower arm secondary control power lead 41L and the lower arm secondary control ground lead 42L are located on the second side y2 of the main ground lead 33 in a second direction y that intersects with the first direction x. The lower arm secondary control ground lead 42L may be located between the main ground lead 33 and the lower arm secondary control power lead 41L in the second direction y.

[0078] Outside the sealing resin 9, the distance d11 between the first upper arm secondary control power supply lead 41U and the first upper arm secondary control ground lead 42U that is closest to the first output lead 35 and the first output lead 35 is smaller than the distance d2 between the first main power supply lead 31 and the first output lead 35. The distance d12 between the first upper arm secondary control power supply lead 41U and the first upper arm secondary control ground lead 42U is smaller than the distance d2 between the first main power supply lead 31 and the first output lead 35.

[0079] Outside the sealing resin 9, a distance d41 between the lower arm secondary control power supply lead 41L and the lower arm secondary control ground lead 42L that is closest to the main ground lead 33 and the main ground lead 33 is smaller than the distance d2 between the first main power supply lead 31 and the first output lead 35. A distance d42 between the lower arm secondary control power supply lead 41L and the lower arm secondary control ground lead 42L is smaller than the distance d2 between the first main power supply lead 31 and the first output lead 35. The distances d41 and d42 are smaller than the distance d3 between the main ground lead 33 and the third output lead 37.

[0080] The distance between the first main power supply lead 31 and the second output lead 36, the distance between the second output lead 36 and the second main power supply lead 32, and the distance between the second main power supply lead 32 and the third output lead 37 may each be distance d2.

[0081] The primary control power supply lead 51 and the primary control ground lead 52 are located on a first side y1 in the second direction y relative to the other control leads 5. The second upper arm secondary control power supply lead 43U and the second upper arm secondary control ground lead 44U are located on a second side y2 in the second direction y relative to the control leads 5. The third upper arm secondary control power supply lead 45U and the third upper arm secondary control ground lead 46U are located on a second side y2 in the second direction y intersecting the first direction x relative to the second upper arm secondary control power supply lead 43U and the second upper arm secondary control ground lead 44U.

[0082] Outside the sealing resin 9, the distance d5 between adjacent control leads 5 is smaller than the distance d2 between the first main power supply lead 31 and the first output lead 35. The distance d5 is smaller than the distance d3.

[0083] Outside the sealing resin 9, the distance d6 between the closest control leads 5 and the second upper arm secondary control power lead 43U and the second upper arm secondary control ground lead 44U is greater than the distance d5. The distance d7 between the second upper arm secondary control power lead 43U and the second upper arm secondary control ground lead 44U is smaller than the distance d6 between the closest control leads 5 and the second upper arm secondary control power lead 43U and the second upper arm secondary control ground lead 44U.

[0084] Outside the sealing resin 9, the distance d8 between the second upper arm secondary side control power lead 43U and the second upper arm secondary side control ground lead 44U and the third upper arm secondary side control power lead 45U and the third upper arm secondary side control ground lead 46U that are close to each other is greater than the distance d9 between the third upper arm secondary side control power lead 45U and the third upper arm secondary side control ground lead 46U.

[0085] A first recess 911 is located between adjacent ones of the first output lead 35, the first main power supply lead 31, the second output lead 36, the second main power supply lead 32, the third output lead 37, and the main ground lead 33. Two second recesses 921 are located between the control lead 536 and the second upper arm secondary-side control ground lead 44U.

[0086] The distances d11 to d9 are not limited in any way. Examples of the distances d11 to d9 include: distance d11 may be, for example, 0.2 mm or more and 3.0 mm or less; distance d12 may be, for example, 0.2 mm or more and 3.0 mm or less; distance d2 may be, for example, 3.4 mm or more and 36.0 mm or less; distance d3 may be, for example, 3.4 mm or more and 36.0 mm or less; distance d41 may be, for example, 0.2 mm or more and 3.0 mm or less; distance d42 may be, for example, 0.2 mm or more and 3.0 mm or less; distance d5 may be, for example, 0.2 mm or more and 3.0 mm or less; distance d6 may be, for example, 9.5 mm or more and 36.0 mm or less; distance d7 may be, for example, 0.2 mm or more and 3.0 mm or less; and distance d8 may be, for example, 6.0 mm or more and 36.0 mm or less. The distance d9 may be, for example, not less than 0.2 mm and not more than 3.0 mm.

[0087] 20 shows a vehicle C equipped with the semiconductor device A1. The vehicle C is, for example, an electric vehicle (EV). The semiconductor device A1 is not limited to in-vehicle applications, but can also be used for various applications such as industrial machinery applications and home electrical appliance applications.

[0088] The vehicle C includes an on-board charger 901, a storage battery 902, and a drive system 903. The on-board charger 901 is supplied with power wirelessly from a power supply facility (not shown) installed outdoors. Alternatively, power may be supplied from the power supply facility to the on-board charger 901 via a wired connection. The on-board charger 901 includes a step-up DC-DC converter and the like. The semiconductor device A1 can be included in the on-board charger 901. The voltage of the power supplied to the on-board charger 901 is boosted by the converter and then supplied to the storage battery 902. The boosted voltage is, for example, 600 V.

[0089] The drive system 903 drives the vehicle C. The drive system 903 has an inverter 9031 and a drive source 9032. The power stored in the storage battery 902 is supplied to the inverter 9031. The power supplied from the storage battery 902 to the inverter 9031 is DC power. In addition, a step-up DC-DC converter may be further provided between the storage battery 902 and the inverter 9031. The inverter 9031 converts DC power into AC power. The inverter 9031 is electrically connected to the drive source 9032. The drive source 9032 has an AC motor and a transmission. When the AC power converted by the inverter 9031 is supplied to the drive source 9032, the AC motor rotates and the rotation is transmitted to the transmission. The transmission appropriately reduces the rotation speed transmitted from the AC motor and then rotates the drive shaft of the vehicle C. This drives the vehicle C.

[0090] Next, the operation of the semiconductor device A1 will be described.

[0091] The first main power supply lead 31, the main ground lead 33, the first output lead 35, the first upper arm secondary control power supply lead 41U, the first upper arm secondary control ground lead 42U, and the multiple control leads 5 protrude from the sealing resin 9 on the side opposite to the first direction x. This allows a sufficient distance to be secured between the first main power supply lead 31, the main ground lead 33, the first output lead 35, the first upper arm secondary control power supply lead 41U, and the first upper arm secondary control ground lead 42U and the multiple control leads 5. For example, in a configuration in which the first upper arm secondary control power supply lead 41U, the first upper arm secondary control ground lead 42U, and the multiple control leads 5 protrude from the same side of the sealing resin 9, it is necessary to secure a predetermined distance between the first upper arm secondary control power supply lead 41U, the first upper arm secondary control ground lead 42U, and the multiple control leads 5. Compared to such a configuration, this embodiment allows for a more compact semiconductor device A1.

[0092] The first upper arm secondary control power lead 41U and the first upper arm secondary control ground lead 42U are adjacent to the first output lead 35 on the first side y1 in the second direction y. The difference in voltage during operation between the first upper arm secondary control power lead 41U and the first upper arm secondary control ground lead 42U and the first output lead 35 is relatively small. This allows the distance d11 to be reduced.

[0093] By setting the distance between the first output lead 35, the first main power supply lead 31, the second output lead 36, the second main power supply lead 32 and the third output lead 37 to distance d2, it is possible to ensure an appropriate insulation distance between them.

[0094] There is a relatively small difference in voltage during operation between the lower arm secondary-side control power supply lead 41L and the lower arm secondary-side control ground lead 42L and the main ground lead 33. This allows the distances d41 and d42 to be shorter than the distances d2 and d3, which is preferable for miniaturizing the semiconductor device A1.

[0095] By positioning the control leads 5 away from the other leads, it is possible to reduce the distance d5 between the control leads 5, which is preferable for miniaturizing the semiconductor device A1.

[0096] By making the distances d7 and d9 smaller than the distances d6 and d8, it is possible to ensure a sufficient distance between the leads whose voltage difference is relatively large, while also achieving miniaturization of the semiconductor device A1.

[0097] The semiconductor device A1 includes a first main power lead 31 electrically connected to the first electrode 101 of the first upper-arm switching element 11U, and a second main power lead 32 electrically connected to the second upper-arm switching element 12U and the third upper-arm switching element 13U. The first main power lead 31 and the second main power lead 32 can be connected to the same voltage potential during operation and can be a single lead. However, by providing the first main power lead 31 and the second main power lead 32 as separate leads, the first upper-arm switching element 11U and the second upper-arm switching element 12U and the third upper-arm switching element 13U can be spaced apart from each other in the second direction y. This allows, for example, the length of the wire 82 to be shortened, thereby reducing inductance. This is advantageous for increasing the speed of the semiconductor device A1.

[0098] Unlike this embodiment, the first main power supply unit 611 may be equipped with the first upper arm switching element 11U and the second upper arm switching element 12U, and the second main power supply unit 612 may be equipped with the third upper arm switching element 13U.

[0099] The main ground portion 613 has an extending portion 6132 extending in the second direction y, which allows the wire 82 to be shortened.

[0100] The first upper arm control element 21U, the second upper arm control element 22U, and the plurality of electronic components 25 are mounted separately on the main surface 7a and the back surface 7b of the control board 7. This allows the area of ​​the control board 7 to be reduced, which is advantageous for miniaturizing the semiconductor device A1. The first upper arm control element 21U, the first lower arm control element 21L, the second upper arm control element 22U, the second lower arm control element 22L, the third upper arm control element 23U, and the third lower arm control element 23L each have a package structure in which a semiconductor element or the like is covered by a resin package. Therefore, unlike the present embodiment, operational reliability can be improved compared to a configuration in which a semiconductor element or the like performing the function of the first upper arm control element 21U, etc. is directly mounted on the control board 7.

[0101] As shown in FIG. 18, the second side surface 7d has an uneven shape, which makes it possible to prevent the second side surface 7d from peeling off from the sealing resin 9, etc.

[0102] 16 , a plurality of second covering portions 732 are provided on the control board 7. The second covering portions 732 have a stronger bonding strength with the sealing resin 9 than the main surface conductive layer 711 containing metal. This increases the bonding strength between the control board 7 and the sealing resin 9.

[0103] 21 to 29 show other embodiments of the present disclosure. In these figures, elements that are the same as or similar to those in the above embodiment are given the same reference numerals. The configurations of the various parts in each of the modified examples and embodiments can be combined with each other as appropriate within the scope of not causing technical contradictions.

[0104] 21 shows a first modification of the semiconductor device A1. In the semiconductor device A11 of this modification, the configuration of the control board 7 is different from that of the semiconductor device A1.

[0105] The control substrate 7 of this modified example includes two first insulating layers 701 and one second insulating layer 702. The two first insulating layers 701 are located on both sides of one second insulating layer 702 in the thickness direction z. The insulating material included in the first insulating layer 701 is harder than the insulating material included in each second insulating layer 702. On the second side surface 7d, the two first insulating layers 701 bulge out and the second insulating layer 702 is recessed.

[0106] This modification makes it possible to reduce the size of the semiconductor device A11. As can be seen from this modification, the specific configuration of the second side surface 7d, which has an uneven shape, is not limited in any way.

[0107] 22 to 28 show a semiconductor device according to a second embodiment of the present disclosure. The semiconductor device A2 of this embodiment can be said to have a two-phase configuration, in contrast to the three-phase configuration of the semiconductor device A1. The semiconductor device A2 includes a first upper arm switching element 11U, a first lower arm switching element 11L, a second upper arm switching element 12U, and a second lower arm switching element 12L, as well as a first upper arm control element 21U, a first lower arm control element 21L, a second upper arm control element 22U, and a second lower arm control element 22L. The semiconductor device A2 includes a first main power supply lead 31, a main ground lead 33, a first output lead 35, a second output lead 36, a first upper arm secondary side control power supply lead 41U, a first upper arm secondary side control ground lead 42U, a second upper arm secondary side control power supply lead 43U, a second upper arm secondary side control ground lead 44U, a lower arm secondary side control power supply lead 41L, a lower arm secondary side control ground lead 42L, and a plurality of control leads 5.

[0108] In this embodiment, the first electrodes 101 of the first upper arm switching element 11U and the second upper arm switching element 12U are conductively connected to the first main power supply unit 611. The connection and positional relationships of the other components may be generally similar to those of the semiconductor device A1.

[0109] According to this embodiment, it is possible to reduce the size of the semiconductor device A2. As can be understood from this embodiment, there is no limitation on the number of switching elements and control elements included in the semiconductor device of the present disclosure.

[0110] 29 shows a first modification of the semiconductor device A2. The semiconductor device A21 of this embodiment differs from the above-described examples mainly in the configuration of the first conductive layer 61 of the main substrate 6.

[0111] In this example, the extending portion 6132 is located on a first side x1 in the first direction x with respect to the first main power supply portion 611 and the second output portion 616. The main ground portion 613 may include an extending portion 6133 and an extending portion 6134. The extending portion 6133 and the extending portion 6134 protrude from both end portions of the extending portion 6132 in the second direction y toward a second side x2 in the first direction x. A wire 82 is connected to the extending portion 6133 and the extending portion 6134.

[0112] According to this embodiment, it is possible to reduce the size of the semiconductor device A21. As can be understood from this modification, the position of the extension portion 6132 is not limited in any way. By positioning the extension portion 6132 on the first side x1 in the first direction x with respect to the first main power supply unit 611 and the second output unit 616, it is possible to shorten the length of the multiple wires 83, which is preferable for increasing the switching speed.

[0113] The semiconductor device according to the present disclosure is not limited to the above-described embodiment. The specific configuration of each part of the semiconductor device according to the present disclosure can be freely modified in various ways. The present disclosure includes the configurations described in the following appendices.

[0114] Supplementary Note 1. A first upper arm switching element (11U) and a first lower arm switching element (11L), each having a first electrode (101) and a second electrode (102) through which a main current flows, and a third electrode (103) to which a control signal for controlling the conduction state of the first electrode (101) and the second electrode (102) is input; a first upper arm control element (21U) that outputs a control signal to the first upper arm switching element (11U); a first lower arm control element (21L) that outputs a control signal to the first lower arm switching element (11L); a first main power supply lead (31) that is electrically connected to the first electrode (101) of the first upper arm switching element (11U); and a main ground lead (33) that is electrically connected to the second electrode (102) of the first lower arm switching element (11L). a first output lead (35) electrically connected to the second electrode (102) of the first upper arm switching element (11U) and the first electrode (101) of the first lower arm switching element (11L); a plurality of control leads (5) electrically connected to the first upper arm control element (21U) and the first lower arm control element (21L); a first upper arm secondary side control power supply lead (41U) and a first upper arm secondary side control ground lead (42U) to which power is supplied for the first upper arm control element (21U) to output a control signal to the first upper arm switching element (11U); and a sealing resin (9) covering the first upper arm switching element (11U), the first lower arm switching element (11L), the first upper arm control element (21U), and the first lower arm control element (21L), The semiconductor device (A1) has a first main power supply lead (31), a main ground lead (33), a first output lead (35), a first upper arm secondary control power supply lead (41U), and a first upper arm secondary control ground lead (42U) that protrude from the sealing resin (9) to a first side (x1) in a first direction (x), and the plurality of control leads (5) protrude from the sealing resin (9) to a second side (x2) in the first direction (x).Supplementary Note 2. The semiconductor device (A1) according to Supplementary Note 1, wherein the first upper arm secondary control power lead (41U) and the first upper arm secondary control ground lead (42U) are located on a first side (y1) relative to the first output lead (35) in a second direction (y) intersecting the first direction (x). Supplementary Note 3. The semiconductor device (A1) according to Supplementary Note 2, wherein the first main power lead (31) is located on a second side (y2) relative to the first output lead (35) in the second direction (y). Supplementary Note 4. The semiconductor device (A1) according to Supplementary Note 3, wherein the main ground lead (33) is located on a second side (y2) relative to the first main power lead (31) in the second direction (y). Supplementary Note 5. The semiconductor device (A1) according to Appendix 4, wherein, outside the sealing resin (9), a distance (d11) between the first upper arm secondary control power lead (41U) and the first upper arm secondary control ground lead (42U) closest to the first output lead (35) and the first output lead (35) is smaller than a distance (d2) between the first main power supply lead (31) and the first output lead (35). Appendix 6. The semiconductor device (A1) according to Appendix 5, wherein, outside the sealing resin (9), a distance (d12) between the first upper arm secondary control power lead (41U) and the first upper arm secondary control ground lead (42U) is smaller than a distance (d2) between the first main power supply lead (31) and the first output lead (35). Appendix 7. The semiconductor device (A1) according to any one of Supplementary Notes 5 and 6, wherein, outside the sealing resin (9), a distance (d5) between adjacent control leads (5) is smaller than a distance (d2) between the first main power supply lead (31) and the first output lead (35).Supplementary Note 8. The semiconductor device (A1) according to any one of Supplementary Notes 1 to 7, further comprising a lower-arm secondary control power supply lead (41L) and a lower-arm secondary control ground lead (42L) to which power is supplied for the first lower-arm control element (21L) to output a control signal to the first lower-arm switching element (11L), and the lower-arm secondary control power supply lead (41L) and the lower-arm secondary control ground lead (42L) protrude from the sealing resin (9) to the first side (x1) in the first direction (x).Supplementary Note 9. The semiconductor device (A1) according to Supplementary Note 8, wherein the lower arm secondary control power lead (41L) and the lower arm secondary control ground lead (42L) are located on the second side (y2) of the main ground lead (33) in a second direction (y) intersecting the first direction (x). Supplementary Note 10. The semiconductor device (A1) according to Supplementary Note 9, wherein, outside the sealing resin (9), a distance (d41) between the lower arm secondary control power lead (41L) and the lower arm secondary control ground lead (42L) closest to the main ground lead (33) and the main ground lead (33) is shorter than a distance (d2) between the first main power lead (31) and the first output lead (35). Supplementary Note 11. The semiconductor device (A1) according to any one of Supplements 1 to 10, wherein each of the first upper arm control element (21U) and the first lower arm control element (21L) has an insulating section (200) that transmits and receives signals in an insulated state between a primary side to which signals from the plurality of control leads (5) are input and a secondary side to which control signals to the first upper arm switching element (11U) and the first lower arm switching element (11L) are generated, and the plurality of control leads (5) include a primary side control power supply lead (51) and a primary side control ground lead (52) through which power is input to the primary sides of the first upper arm control element (21U) and the first lower arm control element (21L).Supplementary Note 11-1. The semiconductor device (A1) according to Supplementary Note 11, wherein the primary side control power supply lead (51) and the primary side control ground lead (52) are located on the first side (y1) in the second direction (y) relative to the other ones of the plurality of control leads (5).Supplementary Note 12. A second upper arm switching element (12U) and a second lower arm switching element (12L), each having a first electrode (101) and a second electrode (102) through which a main current flows, and a third electrode (103) to which a control signal for controlling the conduction state of the first electrode (101) and the second electrode (102) is input, a second upper arm control element (22U) that outputs a control signal to the second upper arm switching element (12U), a second lower arm control element (22L) that outputs a control signal to the second lower arm switching element (12L), a second main power supply lead (32) that is conductive to the first electrode (101) of the second upper arm switching element (12U), and a second output lead (36) that is conductive to the second electrode (102) of the second upper arm switching element (12U) and the first electrode (101) of the second lower arm switching element (12L), the second upper arm control element (22U) comprises a second upper arm secondary-side control power supply lead (43U) and a second upper arm secondary-side control ground lead (44U) to which power is supplied for outputting a control signal to the second upper arm switching element (12U), the second electrode (102) of the second lower arm switching element (12L) is conducted to the main ground lead (33), any of the plurality of control leads (5) is conducted to the second upper arm control element (22U) and the second lower arm control element (22L), the second output lead (36) protrudes from the sealing resin (9) to the first side (x1) in the first direction (x), The semiconductor device (A1) according to any one of Supplementary Notes 1 to 11, wherein the second upper arm secondary control power lead (43U) and the second upper arm secondary control ground lead (44U) protrude from the sealing resin (9) to a second side (x2) in the first direction (x).Supplementary Note 13. The semiconductor device (A1) according to Supplementary Note 12, wherein the second upper arm secondary control power lead (43U) and the second upper arm secondary control ground lead (44U) are located on a second side (y2) relative to the plurality of control leads (5) in the second direction (y).Supplementary Note 14. A third upper arm switching element (13U) and a third lower arm switching element (13L), each having a first electrode (101) and a second electrode (102) through which a main current flows, and a third electrode (103) to which a control signal for controlling the conduction state of the first electrode (101) and the second electrode (102) is input, a third upper arm control element (23U) that outputs a control signal to the third upper arm switching element (13U), a third lower arm control element (23L) that outputs a control signal to the third lower arm switching element (13L), a third output lead (37) that is conductive to the second electrode (102) of the third upper arm switching element (13U) and the first electrode (101) of the third lower arm switching element (13L), the third upper arm control element (23U) comprises a third upper arm secondary-side control power supply lead (45U) and a third upper arm secondary-side control ground lead (46U) to which power is supplied for outputting a control signal to the third upper arm switching element (13U), the first electrode (101) of the third upper arm switching element (13U) is conducted to the second main power supply lead (32), the second electrode (102) of the third lower arm switching element (13L) is conducted to the main ground lead (33), any of a plurality of control leads (5) is conducted to the third upper arm control element (23U) and the third lower arm control element (23L), the third output lead (37) protrudes from the sealing resin (9) to the first side (x1) in the first direction (x), The semiconductor device (A1) according to Appendix 12 or 13, wherein the third upper arm secondary control power lead (45U) and the third upper arm secondary control ground lead (46U) protrude from the sealing resin (9) to a second side (x2) in the first direction (x). Appendix 15. The semiconductor device (A1) according to Appendix 14, wherein the third upper arm secondary control power lead (45U) and the third upper arm secondary control ground lead (46U) are located on the second side (y2) relative to the second upper arm secondary control power lead (43U) and the second upper arm secondary control ground lead (44U) in a second direction (y) intersecting the first direction (x).Supplementary Note 15-1. The semiconductor device (A1) according to Supplementary Note 15, wherein the second main power supply lead (32) is located between the first main power supply lead (31) and the main ground lead (33) in the second direction (y). Supplementary Note 15-2. The semiconductor device (A1) according to Supplementary Note 15-1, wherein the second output lead (36) is located between the first main power supply lead (31) and the second main power supply lead (32) in the second direction (y). Supplementary Note 15-3. The semiconductor device (A1) according to Supplementary Note 15-1 or Supplementary Note 15-2, wherein the third output lead (37) is located between the second main power supply lead (32) and the main ground lead (33) in the second direction (y). Supplementary Note 15-4. The semiconductor device (A1) according to Appendix 15-3, wherein, outside the sealing resin (9), a distance (d6) between the nearest ones of the plurality of control leads (5) and the second upper arm secondary control power lead (43U) and the second upper arm secondary control ground lead (44U) is greater than a distance (d5) between adjacent ones of the control leads (5). Appendix 15-5. The semiconductor device (A1) according to Appendix 15-4, wherein, outside the sealing resin (9), a distance (d7) between the second upper arm secondary control power lead (43U) and the second upper arm secondary control ground lead (44U) is smaller than a distance (d6) between the nearest ones of the plurality of control leads (5) and the second upper arm secondary control power lead (43U) and the second upper arm secondary control ground lead (44U). Appendix 15-6. A semiconductor device (A1) described in Appendix 15-5, wherein, outside the sealing resin (9), the distance (d8) between the second upper arm secondary control power lead (43U) and the second upper arm secondary control ground lead (44U) and the third upper arm secondary control power lead (45U) and the third upper arm secondary control ground lead (46U) is greater than the distance (d9) between the third upper arm secondary control power lead (45U) and the third upper arm secondary control ground lead (46U).Appendix 16. The semiconductor device (A2) according to Appendix 12, comprising a main substrate (6) on which the first upper arm switching element (11U), the first lower arm switching element (11L), the second upper arm switching element (12U), and the second lower arm switching element (12L) are mounted. Appendix 17. The semiconductor device (A2) according to Appendix 16, wherein the main substrate (6) has an insulating layer (60) and a first conductive layer (61) and a second conductive layer (62) positioned separately on both sides of the insulating layer (60) in the thickness direction (z), and the first upper arm switching element (11U), the first lower arm switching element (11L), the second upper arm switching element (12U), and the second lower arm switching element (12L) are conductively joined to the first conductive layer (61). Appendix 18. The first conductive layer (61) includes a first main power supply section (611), a main ground section (613), a first output section (615), and a second output section (616), the first main power supply section (611) is conductively connected to the first electrode (101) of the first upper arm switching element (11U), the first electrode (101) of the second upper arm switching element (12U), and the first main power supply lead (31), the main ground section (613) is conductively connected to the main ground lead (33), and the first output section (615) is conductively connected to the first electrode (101) of the first lower arm switching element (11L) and the first output lead (35), The semiconductor device (A2) according to Appendix 17, wherein the second output section (616) is electrically connected to the first electrode (101) of the second lower arm switching element (12L) and the second output lead (36). Appendix 19. The semiconductor device (A2) according to Appendix 18, wherein the main ground section (613) has an extending section (6132) extending along the second direction (y).Supplementary Note 20. The semiconductor device (A2) according to Supplementary Note 19, wherein the first upper arm switching element (11U), the first lower arm switching element (11L), the second upper arm switching element (12U), and the second lower arm switching element (12L) are located on the first side (x1) of the extending portion (6132) in the first direction (x), and the first upper arm control element (21U), the first upper arm control element (21U), the second upper arm control element (22U), and the second lower arm control element (22L) are located on the second side (x2) of the extending portion (6132) in the first direction (x). Supplementary Note 21. The semiconductor device (A21) according to Appendix 19, wherein the first upper arm switching element (11U), the first lower arm switching element (11L), the second upper arm switching element (12U), and the second lower arm switching element (12L) are located on the second side (x2) with respect to the extending portion (6132) in the first direction (x), and the first upper arm control element (21U), the first upper arm control element (21U), the second upper arm control element (22U), and the second lower arm control element (22L) are located on the second side (x2) with respect to the first upper arm switching element (11U), the first lower arm switching element (11L), the second upper arm switching element (12U), and the second lower arm switching element (12L) in the first direction (x). The semiconductor device (A1) described in Appendix 14 or Appendix 15 includes a main substrate (6) on which the first upper arm switching element (11U), the first lower arm switching element (11L), the second upper arm switching element (12U), the second lower arm switching element (12L), the third upper arm switching element (13U), and the third lower arm switching element (13L) are mounted.Supplementary Note 23. The semiconductor device (A1) according to Supplementary Note 22, wherein the main substrate (6) has an insulating layer (60) and a first conductive layer (61) and a second conductive layer (62) positioned separately on both sides of the insulating layer (60) in the thickness direction (z), and the first upper arm switching element (11U), the first lower arm switching element (11L), the second upper arm switching element (12U), the second lower arm switching element (12L), the third upper arm switching element (13U), and the third lower arm switching element (13L) are conductively joined to the first conductive layer (61). Supplementary Note 24. The first conductive layer (61) includes a first main power supply section (611), a second main power supply section (612), a main ground section (613), a first output section (615), a second output section (616), and a third output section (617), the first main power supply section (611) is conductively connected to the first electrode (101) of the first upper arm switching element (11U) and the first main power supply lead (31), the second main power supply section (612) is conductively connected to the first electrode (101) of the second upper arm switching element (12U), the first electrode (101) of the third upper arm switching element (13U), and the second main power supply lead (32), and the main ground section (613) is conductively connected to the main ground lead (33), The semiconductor device (A1) according to Supplementary Note 23, wherein the first output section (615) is electrically connected to the first electrode (101) of the first lower arm switching element (11L) and the first output lead (35), the second output section (616) is electrically connected to the first electrode (101) of the second lower arm switching element (12L) and the second output lead (36), and the third output section (617) is electrically connected to the first electrode (101) of the third lower arm switching element (13L) and the third output lead (37).Supplementary Note 25. The semiconductor device (A1) according to Supplementary Note 24, wherein the main ground section (613) has an extending section (6132) extending along the second direction (y).Supplementary Note 26. The semiconductor device (A2) according to Supplementary Note 25, wherein the first upper arm switching element (11U), the first lower arm switching element (11L), the second upper arm switching element (12U), the second lower arm switching element (12L), the third upper arm switching element (13U), and the third lower arm switching element (13L) are located on the first side (x1) with respect to the extending portion (6132) in the first direction (x), and the first upper arm control element (21U), the first upper arm control element (21U), the second upper arm control element (22U), the second lower arm control element (22L), the third upper arm control element (23U), and the third lower arm control element (23L) are located on the second side (x2) with respect to the extending portion (6132) in the first direction (x). Supplementary Note 27. The semiconductor device (A1) according to any one of Supplementary Notes 1 to 26, comprising: a plurality of electronic components (25) each electrically connected to either the first upper arm control element (21U) or the first lower arm control element (21L); and a control board (7) on which the first upper arm control element (21U), the first lower arm control element (21L), and the plurality of electronic components (25) are mounted, the control board (7) having a main surface (7a) and a back surface (7b) facing opposite each other in a thickness direction (z), the first upper arm control element (21U), the first lower arm control element (21L), and the plurality of electronic components (25) being mounted on the main surface (7a), and the first upper arm control element (21U), the first lower arm control element (21L), and the plurality of electronic components (25) being mounted on the back surface (7b). The semiconductor device (A1) according to Supplementary Note 27, wherein the first upper arm control element (21U) and the first lower arm control element (21L) are mounted on the main surface (7a).Supplementary Note 29. The semiconductor device (A1) according to Supplementary Note 27 or Supplementary Note 28, wherein the control board (7) has a second side surface (7d) located between the main surface (7a) and the back surface (7b) in the thickness direction (z) and facing a direction intersecting the thickness direction (z), and the second side surface (7d) is an uneven surface.Supplementary Note 30. The semiconductor device (A1) according to any one of Supplementary Notes 27 to 29, wherein the control substrate (7) includes the main surface conductive layer (711), the main surface conductive layer (711) includes a pad portion (7111) and a wiring portion (7112), a wire (83) is bonded to the pad portion (7111), and the control substrate (7) includes a first covering portion (731) that covers a portion of the main surface conductive layer (711) adjacent to the pad portion (7111), and a second covering portion (732) that covers a portion of the wiring portion (7112). Supplementary Note 31. A vehicle (C) comprising: a drive system (903); a storage battery (902) that supplies power to the drive system (903); an on-board charger (901) that supplies power to the storage battery (903); and a semiconductor device (A1) according to any one of Supplementary Notes 1 to 30, wherein the semiconductor device (A1) is included in a circuit that constitutes the on-board charger (901).

[0115] A1, A11, A2, A21: semiconductor device 1: first insulating layer 5: control lead 6: main board 7: control board 7a: main surface 7b: back surface 7c: first side surface 7d: second side surface 9: sealing resin 11L: first lower arm switching element 11U: first upper arm switching element 12L: second lower arm switching element 12U: second upper arm switching element 13L: third lower arm switching element 13U: third upper arm switching element 18: thermistor 19: conductive bonding material 21L: first lower arm control element 21U: first upper arm control element 22L: second lower arm control element 22U: second upper arm control element 23L: third lower arm control element 23U: third upper arm control element 25: electronic component 31: first main power supply lead 32: second main power supply lead 33: main ground lead 35: First output lead 36: Second output lead 37: Third output lead 41L: Lower arm secondary side control power lead 41U: First upper arm secondary side control power lead 42L: Lower arm secondary side control ground lead 42U: First upper arm secondary side control ground lead 43U: Second upper arm secondary side control power lead 44U: Second upper arm secondary side control ground lead 45U: Third upper arm secondary side control power lead 46U: Third upper arm secondary side control ground lead 51: Primary side control power lead 52: Primary side control ground lead 531 to 53c: Control leads 60: Insulating layer 61: First conductive layer 62: Second conductive layer 73: Covering portion 78: Support lead 79: Support lead 81, 82, 83, 85, 86,87: Wire 91: Resin main surface 92: Resin back surface 93: Resin first side surface 94: Resin second side surface 95: Resin third side surface 96: Resin fourth side surface 101: First electrode 102: Second electrode 103: Third electrode 200: Insulation portion 201: Primary side power supply electrode 202: Primary side ground electrode 203: Primary side control electrode 205: Secondary side power supply electrode 206: Secondary side ground electrode 207: Secondary side output electrode 301: Terminal portion 302: Joint portion 401: Terminal portion 402: Pad portion 501: Terminal portion 502: Pad portion 611: First main power supply portion 612: Second main power supply portion 613: Main ground portion 615: First output portion 616: Second output portion 617: Third output portion 618: First temperature measuring portion 619: Second temperature measuring portion 701: First insulating layer 702: Second insulating layer 711: Main surface conductive layer 712: Back surface conductive layer 713: Intermediate conductive layer 731: First covering portion 732: Second covering portion 901: On-board charger 902: Storage battery 903: Drive system 911: First recess 921: Second recess 931: Third recess 932: Drive source 941: Fourth recess 951: Fifth recess 961: Sixth recess 6131: Base portion 6132: Extension portion 6133: Extension portion 6134: Extension portion 7111: Pad portion 7112: Wiring portion 9031: Inverter 9032: Drive source C: Vehicle d10, d11, d12, d2, d3, d41, d42, d5, d6, d7, d8, d9: distance x: first direction y: second direction z: thickness direction,

Claims

a first upper arm switching element and a first lower arm switching element, each having a first electrode and a second electrode through which a main current flows, and a third electrode to which a control signal for controlling the conduction state of the first electrode and the second electrode is input; a first upper arm control element that outputs a control signal to the first upper arm switching element; a first lower arm control element that outputs a control signal to the first lower arm switching element; a first main power supply lead that is electrically connected to the first electrode of the first upper arm switching element; a main ground lead electrically connected to the second electrode of the first lower arm switching element; a first output lead electrically connected to the second electrode of the first upper arm switching element and the first electrode of the first lower arm switching element; a plurality of control leads electrically connected to the first upper arm control element and the first lower arm control element; a first upper arm secondary-side control power supply lead and a first upper arm secondary-side control ground lead to which power is supplied for the first upper arm control element to output a control signal to the first upper arm switching element; a sealing resin that covers the first upper arm switching element, the first lower arm switching element, the first upper arm control element, and the first lower arm control element, the first main power supply lead, the main ground lead, the first output lead, the first upper arm secondary side control power supply lead, and the first upper arm secondary side control ground lead protrude from the sealing resin to a first side in a first direction, The semiconductor device, wherein the plurality of control leads protrude from the sealing resin to a second side in the first direction.

2. The semiconductor device according to claim 1, wherein the first upper arm secondary control power supply lead and the first upper arm secondary control ground lead are located on a first side relative to the first output lead in a second direction intersecting the first direction.

3. The semiconductor device according to claim 2, wherein said first main power supply lead is located on a second side relative to said first output lead in said second direction.

4. The semiconductor device according to claim 3, wherein said main ground lead is located on a second side relative to said first main power supply lead in said second direction. 　 Outside the sealing resin, 5. The semiconductor device according to claim 4, wherein the distance between the first upper arm secondary control power supply lead and the first upper arm secondary control ground lead that is closest to the first output lead and the first output lead is smaller than the distance between the first main power supply lead and the first output lead. 　 Outside the sealing resin, 6. The semiconductor device according to claim 5, wherein a distance between said first upper arm secondary control power supply lead and said first upper arm secondary control ground lead is shorter than a distance between said first main power supply lead and said first output lead. 　 Outside the sealing resin, 7. The semiconductor device according to claim 5, wherein the distance between adjacent control leads is smaller than the distance between the first main power supply lead and the first output lead. 　 the first lower arm control element includes a lower arm secondary side control power supply lead and a lower arm secondary side control ground lead to which power is supplied for outputting a control signal to the first lower arm switching element, 8. The semiconductor device according to claim 1, wherein the lower arm secondary control power lead and the lower arm secondary control ground lead protrude from the sealing resin to the first side in the first direction.

9. The semiconductor device according to claim 8, wherein the lower arm secondary control power lead and the lower arm secondary control ground lead are located on the second side of the main ground lead in a second direction intersecting the first direction. 　 Outside the sealing resin, 10. The semiconductor device according to claim 9, wherein the distance between the lower arm secondary control power supply lead and the lower arm secondary control ground lead that is closest to the main ground lead and the main ground lead is shorter than the distance between the first main power supply lead and the first output lead. 　 each of the first upper arm control element and the first lower arm control element has an insulating section that transmits and receives signals in an insulated state between a primary side to which signals from the plurality of control leads are input and a secondary side to which control signals to the first upper arm switching element and the first lower arm switching element are generated; 11. The semiconductor device according to claim 1, wherein the plurality of control leads include a primary side control power supply lead and a primary side control ground lead through which power is input to the primary sides of the first upper arm control element and the first lower arm control element. 　 a second upper arm switching element and a second lower arm switching element, each having a first electrode and a second electrode through which a main current flows, and a third electrode to which a control signal for controlling the conduction state of the first electrode and the second electrode is input; a second upper arm control element that outputs a control signal to the second upper arm switching element; a second lower arm control element that outputs a control signal to the second lower arm switching element; a second main power supply lead that is electrically connected to the first electrode of the second upper arm switching element; a second output lead electrically connected to the second electrode of the second upper arm switching element and the first electrode of the second lower arm switching element; a second upper arm secondary-side control power supply lead and a second upper arm secondary-side control ground lead to which power is supplied for the second upper arm control element to output a control signal to the second upper arm switching element, the second electrode of the second lower arm switching element is electrically connected to the main ground lead; any one of the plurality of control leads is electrically connected to the second upper arm control element and the second lower arm control element; the second output lead protrudes from the sealing resin to the first side in the first direction, 12. The semiconductor device according to claim 1, wherein the second upper arm secondary control power lead and the second upper arm secondary control ground lead protrude from the sealing resin to a second side in the first direction. 　 13 . The semiconductor device according to claim 12 , wherein the second upper arm secondary control power supply lead and the second upper arm secondary control ground lead are located on a second side relative to the plurality of control leads in the second direction. a third upper arm switching element and a third lower arm switching element, each having a first electrode and a second electrode through which a main current flows, and a third electrode to which a control signal for controlling the conduction state of the first electrode and the second electrode is input; a third upper arm control element that outputs a control signal to the third upper arm switching element; a third lower arm control element that outputs a control signal to the third lower arm switching element; a third output lead electrically connected to the second electrode of the third upper arm switching element and the first electrode of the third lower arm switching element; a third upper arm secondary-side control power supply lead and a third upper arm secondary-side control ground lead to which power is supplied for the third upper arm control element to output a control signal to the third upper arm switching element, the first electrode of the third upper arm switching element is electrically connected to the second main power supply lead; the second electrode of the third lower arm switching element is electrically connected to the main ground lead; any of the plurality of control leads is electrically connected to the third upper arm control element and the third lower arm control element; the third output lead protrudes from the sealing resin to the first side in the first direction, 14. The semiconductor device according to claim 12, wherein the third upper arm secondary control power lead and the third upper arm secondary control ground lead protrude from the sealing resin to a second side in the first direction.

15. The semiconductor device of claim 14, wherein the third upper arm secondary control power lead and the third upper arm secondary control ground lead are located on the second side relative to the second upper arm secondary control power lead and the second upper arm secondary control ground lead in a second direction intersecting the first direction. 　 The drive system and a storage battery that supplies power to the drive system; an on-board charger that supplies power to the storage battery; a semiconductor device according to any one of claims 1 to 15; The semiconductor device is included in a circuit that configures the on-board charger.

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