Substrate for manufacturing wafer-type sensor, method for manufacturing spacer-insert structure for manufacturing wafer-type sensor, and wafer-type sensor

Abstract

A substrate for manufacturing a wafer-type sensor according to the present invention comprises: a substrate part provided in a predetermined shape; and a partition part for dividing the substrate part into a plurality of divided regions, wherein the partition part may be made of an insulating material and inserted into a through region formed in the substrate part.

Description

A substrate for manufacturing a wafer-type sensor, a method for manufacturing a space insertion structure for manufacturing a wafer-type sensor, and a wafer-type sensor

[0001] The present invention relates to a substrate for manufacturing a wafer-type sensor, a method for manufacturing a space insertion structure for manufacturing a wafer-type sensor, and a wafer-type sensor.

[0002] Semiconductors are manufactured through a number of processes, including wafer manufacturing process, oxidation process, photo process, deposition / ion implantation process, metal wiring process, EDS (Electrical Die Sorting) process, and packaging process.

[0003] In semiconductor manufacturing, yield is a very important factor, and to increase yield, process conditions and operating status must be precisely monitored during the semiconductor manufacturing process.

[0004] In other words, monitoring is required to precisely control the temperature of the chamber or wafer, gas injection status, pressure status, presence or absence of static electricity, plasma density, and exposure distance.

[0005] For precise monitoring of the above process, wafer-type sensors are currently being used. In wafer-type sensors, a circuit board with sensors for various purposes mounted on a wafer-shaped silicon substrate is mounted, and various process conditions in the semiconductor manufacturing process are directly sensed within the chamber through each sensor.

[0006] As described above, a wafer-type sensor is formed by mounting a circuit board with various purpose sensors between an upper substrate and a lower substrate made of silicon material formed as a single channel. However, in the past, problems arose in terms of accuracy when monitoring whether static electricity was generated or plasma density, etc. due to the characteristics of a single channel.

[0007] Because the substrate is provided as a single channel, all areas on the substrate are identified as the same and measured with a single sensing value, which ultimately causes a problem of reduced reliability in terms of accuracy because the center and edge areas on the wafer are measured identically despite the gradient.

[0008] Meanwhile, the wafer-type sensor creates an empty space between the upper and lower substrates to position the circuit board on which the sensor is mounted. This empty space acts as a factor that causes damage when a vacuum is applied within the chamber.

[0009] For the reasons mentioned above, a defoaming process is performed in the past, but even if a defoaming process is performed, it is difficult to completely remove the air bubbles in the empty space.

[0010] The purpose of the present invention is to provide a substrate for manufacturing a wafer-type sensor that can ensure sensing accuracy by dividing an area and sensing whether static electricity is generated or plasma density, etc., during a semiconductor manufacturing process.

[0011] In addition, another object of the present invention is to provide a method for manufacturing a space insertion structure for manufacturing a wafer-type sensor and a wafer-type sensor that prevents damage due to expansion even when the atmosphere within the chamber is changed to a vacuum condition.

[0012] A substrate for manufacturing a wafer-type sensor according to the present invention comprises: a substrate portion provided in a predetermined shape; and a partition portion for dividing the substrate portion into a plurality of partitioned regions; wherein the partition portion may be provided with an insulating material and inserted into a through region formed on the substrate portion.

[0013] The penetration region and the partition portion of the substrate for manufacturing the wafer-type sensor according to the present invention may be provided in an annular shape such that the partitioned region includes a central region and at least one annular outer region radially outward based on the central region.

[0014] A substrate for manufacturing a wafer-type sensor according to the present invention may further include a filling portion that fills an empty space on the through-hole area after the partition is inserted into the through-hole area, thereby preventing a change in the position of the partition within the through-hole area.

[0015] The filling portion of the substrate for manufacturing the wafer-type sensor according to the present invention may be characterized in that it does not exist on the upper and lower surfaces of the partition portion so as to prevent current flow between the partitioned areas.

[0016] The partition portion and the filling portion of the substrate for manufacturing the wafer-type sensor according to the present invention may be characterized in that, after the partition portion, which is the mother of the partition portion, is inserted into the penetration area and the filling portion, which is the mother of the filling portion, is filled, the partition portion and the filling portion are manufactured to have the same predetermined thickness as the substrate portion through processing of at least one of the upper and lower surfaces.

[0017] The substrate portion, the partition portion, and the filling portion of the substrate for manufacturing the wafer-type sensor according to the present invention may be characterized in that, when the partition portion, which is the mother of the partition portion, is inserted into the through area formed in the substrate mother portion having a predetermined thickness or more, which is the mother of the substrate portion, and then the filling portion, which is the mother of the filling portion, is filled, the filling portion is manufactured to the predetermined thickness through processing of at least one of the upper and lower surfaces.

[0018] The above-described section of the substrate for manufacturing a wafer-type sensor according to the present invention may be characterized in that the cross-sectional shape is defined through cutting processing of at least one of the upper and lower surfaces.

[0019] The filling portion of the substrate for manufacturing the wafer-type sensor according to the present invention may be characterized in that it does not exist on the upper and lower surfaces of the partition portion by the cutting process.

[0020] A wafer-type sensor according to the present invention may include a substrate for manufacturing the wafer-type sensor.

[0021] The substrate for manufacturing a wafer-type sensor according to the present invention can improve the accuracy of sensing by providing a substrate in which the central region and the edge region on the wafer are divided into regions so that they can be sensed individually.

[0022] In addition, according to the method for manufacturing a space insertion structure for manufacturing a wafer-type sensor according to the present invention and the wafer-type sensor, damage due to expansion can be prevented even if the atmosphere within the chamber is changed to a vacuum condition.

[0023] FIG. 1 is a drawing illustrating a substrate for manufacturing a wafer-type sensor according to the present invention.

[0024] Figure 2 is a drawing for explaining a manufacturing process of a substrate for manufacturing a wafer-type sensor according to the present invention.

[0025] FIG. 3 is a drawing for explaining a modified example of a manufacturing process of a substrate for manufacturing a wafer-type sensor according to the present invention.

[0026] FIGS. 4 to 9 are drawings for explaining a method for manufacturing a space insertion structure for manufacturing a wafer-type sensor according to the present invention, and a process for manufacturing a wafer-type sensor using a space insertion structure manufactured thereby.

[0027] Figure 10 is a drawing for explaining a wafer-type sensor according to the present invention.

[0028] A substrate for manufacturing a wafer-type sensor according to the present invention comprises: a substrate portion provided in a predetermined shape; and a partition portion for dividing the substrate portion into a plurality of partitioned regions; wherein the partition portion may be provided with an insulating material and inserted into a through region formed on the substrate portion.

[0029] Hereinafter, specific embodiments of the present invention will be described in detail with reference to the drawings. However, the spirit of the present invention is not limited to the presented embodiments, and those skilled in the art who understand the spirit of the present invention will be able to easily propose other inventions that are retrograde or other embodiments included within the scope of the spirit of the present invention by adding, modifying, or deleting other components within the scope of the same spirit. However, this will also be considered to be included within the scope of the spirit of the present invention.

[0030]

[0031] In addition, components having the same function within the same scope of the same idea shown in the drawings of each embodiment are described using the same reference numerals.

[0032]

[0033] 1. Substrate for manufacturing wafer-type sensors

[0034]

[0035] FIG. 1 is a drawing illustrating a substrate for manufacturing a wafer-type sensor according to the present invention, and FIG. 2 is a drawing for explaining a manufacturing process of a substrate for manufacturing a wafer-type sensor according to the present invention.

[0036]

[0037] Referring to FIGS. 1 and 2, a substrate (100) for manufacturing a wafer-type sensor according to the present invention is intended to solve problems with conventional substrates made of silicon material formed into a single channel, and may be a substrate capable of improving accuracy in sensing whether static electricity is generated or plasma density, etc.

[0038] The substrate (100) for manufacturing the above wafer-type sensor may include a substrate portion (110), a partition portion (120), etc.

[0039] The above substrate portion (110) may be provided in the form of a silicon wafer with a predetermined shape and may have electrical conductivity characteristics.

[0040] The above-mentioned partition (120) is a component for dividing the substrate (110) into a plurality of partitioned areas, and unlike the substrate (110) having electrically conductive properties, it is provided with an insulating material such as glass or quartz and can be inserted into a penetration area (112) formed on the substrate (110).

[0041] The substrate (100) for manufacturing the above wafer-type sensor can be divided into a plurality of regions along the radial direction by the partition (120), and thus, sensing of whether static electricity is generated or plasma density, etc. can be made possible for each region, thereby ensuring reliability, etc.

[0042] Here, the penetration region (112) and the partition (120) may be provided in an annular shape so that the partitioned region includes a central region (114) and at least one annular outer region (116) radially outward from the central region (114).

[0043] Meanwhile, the substrate (100) for manufacturing the wafer-type sensor according to the present invention may include a filling portion (130) that is filled in an empty space on the through-hole area (112) after the partition (120) is inserted into the through-hole area (112) to prevent a change in the position of the partition (120) within the through-hole area (112).

[0044] The above filling part (130) may be provided with a silicone-based material and may have adhesive properties, and due to its electrical conductivity, may not exist on the upper and lower surfaces of the partition part (120) to prevent electrical conductivity between the partitioned areas.

[0045] Ultimately, current flow between the areas of the substrate (110) due to the filling portion (130) is prevented in advance.

[0046] Below, the manufacturing process of the substrate (100) for manufacturing the wafer-type sensor according to the present invention as described above is described.

[0047] Referring to Fig. 2(a), when a substrate portion (110) made of silicon material is provided, an etching process is performed based on a plurality of predetermined partitioned areas.

[0048] Referring to Fig. 2(b), the etching process can be performed using the DEEP-RIE method, and the etching surface (S1) can have an inclination angle of 89° to 91° with respect to the vertical line.

[0049] When a penetration area (112) is formed through an etching process as described above, a partition mother body (122) made of an insulating material such as glass or quartz can be inserted into the penetration area (112) as shown in FIG. 2(c).

[0050] The above partition mother body (122) may be a component that becomes the mother body of the partition mother body (120).

[0051] The above-mentioned partition mother body (122) can be manufactured by processing using the sandblasting method, and due to the characteristics of sandblasting, can have a polygonal cross-section with an inclination angle of about 60° with respect to the vertical line.

[0052] Referring to Fig. 2(d), when the partition mother body (122) that becomes the mother of the partition part (120) is inserted into the penetration area (112), the filling mother body (132) that becomes the mother of the filling part (130) can be filled.

[0053] The above-mentioned filling mother body (132) is a liquid silicone series, and after a predetermined period of time has passed after filling, it hardens and solidifies, so that the partition mother body (122) can be fixed within the penetration area (112).

[0054] When the above partition mother body (122) is fixed within the penetration area (112), the partition (120) and the filling part (130) are manufactured to have the same predetermined thickness as the substrate part (110) through processing of at least one of the upper and lower surfaces.

[0055] For example, the substrate portion (110) may be provided with a predetermined thickness of about 0.3 mm to 0.4 mm, and when the partition mother portion (122) is fixed by the filling mother portion (132) within the penetration region (112), it may be processed to a predetermined thickness of about 0.3 mm to 0.4 mm, which is the same as the substrate portion (110), through cutting processing (C) such as grinding of the upper and lower surfaces as shown in FIG. 2(d).

[0056] Meanwhile, in the case where the bottom surface of the partition mother body (122) inserted into the penetration area (112) is located on the same plane as the bottom surface of the substrate portion (110), the partition portion (120) and the filling portion (130) can be made to have the same predetermined thickness as the substrate portion (110) by processing only the upper surface.

[0057] Through the above-described cutting process, the filling part (130) is made non-existent on the upper and lower surfaces of the partition part (120), so that current conduction between regions of the substrate part (110) due to the filling part (130) of the silicon series can be prevented in advance.

[0058] And, the cross-sectional shape of the above-mentioned partition (120) is defined through cutting processing of at least one of the upper and lower surfaces as described above.

[0059]

[0060] FIG. 3 is a drawing for explaining a modified example of a manufacturing process of a substrate for manufacturing a wafer-type sensor according to the present invention.

[0061]

[0062] Referring to FIG. 3, a modified example of a manufacturing process of a substrate (100) for manufacturing a wafer-type sensor according to the present invention has the same configuration and effect as the manufacturing process described with reference to FIG. 2 except for the processing process, and therefore, a description other than the processing process will be omitted.

[0063] Referring to FIG. 3(d), when a partitioned mother body (122), which becomes the mother of a partitioned portion (120), is inserted into a penetration region (112) formed in a substrate mother body (111) having a predetermined thickness or greater, which becomes the mother of a substrate portion (110), a filled mother body (132), which becomes the mother of a filled portion (130), can be filled.

[0064] When the above-mentioned partition mother body (122) is fixed within the penetration area (112) by the above-mentioned filling mother body (132), the substrate part (110), the partition part (120) and the filling part (130) are manufactured to a predetermined thickness as a whole through processing of at least one of the upper and lower surfaces.

[0065] For example, the substrate mother body (111) may be provided with a predetermined thickness of about 0.8 mm or more, and when the partition mother body (122) is fixed by the filling mother body (132) within the penetration area (112), it may be processed to a predetermined thickness of about 0.3 mm to 0.4 mm in advance through cutting processing (C) such as overall grinding of the upper and lower surfaces as shown in FIG. 3(d).

[0066] Through the above-described cutting process, the filling part (130) is made non-existent on the upper and lower surfaces of the partition part (120), so that current conduction between regions of the substrate part (110) due to the filling part (130) of the silicon series can be prevented in advance.

[0067] And, the cross-sectional shape of the above-mentioned partition (120) is defined through cutting processing of at least one of the upper and lower surfaces as described above.

[0068] The substrate (100) for manufacturing a wafer-type sensor manufactured through the above process is ultimately used to manufacture a wafer-type sensor.

[0069]

[0070] 2. A method for manufacturing a space insertion structure for manufacturing a wafer-type sensor and a wafer-type sensor including a space insertion structure manufactured thereby.

[0071]

[0072] FIGS. 4 to 9 are drawings for explaining a method for manufacturing a space insertion structure for manufacturing a wafer-type sensor according to the present invention, and a process for manufacturing a wafer-type sensor using a space insertion structure manufactured thereby.

[0073]

[0074] The space insertion structure (200) described below is a component that prevents performance degradation due to vacuum, i.e., damage due to expansion, etc., when the wafer-type sensor (300) is used in a vacuum state within a chamber, and can be manufactured in advance in a solidified state by a mold (M1, M2).

[0075]

[0076] Referring to FIG. 4, a step may be performed in which an upper mold (M1) and a lower mold (M1) are provided so that a space insertion structure (200) of a specific shape is manufactured by a combination.

[0077] The upper mold (M1) and the lower mold (M1) above may be formed of a transparent material so that the manufacturing process of the space insertion structure (200) can be visually observed, but is not necessarily limited thereto.

[0078] Meanwhile, at least one upper protrusion (210) can be formed on the mating surface of the upper mold (M1).

[0079] The upper protrusion (210) may be formed at a position corresponding to at least one sensor (232) for performing a specific purpose mounted on a circuit board (230) provided in the wafer-type sensor (300), and due to the upper protrusion (210), a predetermined lower space (SP1) into which the sensor (232) can be inserted is formed in the space insertion structure (200).

[0080] At least one lower protrusion (220) can also be formed on the mating surface of the lower mold (M1).

[0081] The lower protrusion (220) may be formed at a position corresponding to the partition wall (322) of the second substrate (320) for partitioning at least one sensor (232) mounted on the circuit board (230) according to a predetermined standard, and due to the lower protrusion (220), a predetermined upper space (SP2) into which the partition wall (322) can be inserted is formed in the space insertion structure (200).

[0082] When the upper mold (M1) and the lower mold (M1) are provided as described above, a step of applying a release agent (RA, indicated by a curved arrow) to at least one of the mating surface of the lower mold (M1) and the mating surface of the upper mold (M1) may be performed.

[0083] The above release agent (RA) is provided in a silicone-based liquid form and can be sprayed onto at least one of the above-mentioned mating surfaces in a spray manner, but is not necessarily limited to a silicone-based form.

[0084] Referring to FIG. 5, a step of filling a liquid filler (330) into a joint space (SS) provided by the joint of the upper mold (M1) and the lower mold (M1), and a step of hardening the liquid filler (330) to manufacture a space insertion structure (200) can be performed.

[0085] When the above liquid filler (330) is hardened, a step of removing the space insertion structure (200) from the combined space (SS) can proceed, as shown in FIG. 6.

[0086] The above release agent (RA) may have lower viscosity compared to the liquid filler (330), and thus, when sprayed, it may be evenly sprayed over the entire area of ​​the mating surface, thereby preventing the occurrence of unsprayed areas.

[0087] The above-mentioned release agent (RA) can be provided as a material that provides a lubricating effect between the mating surface and the space insertion structure (200) provided in a cured state, while reducing the adhesive force with the space insertion structure (200).

[0088] Accordingly, the above-mentioned release agent (RA) can prevent damage such as tearing during the process of removing the space insertion structure (200) from the combined space (SS), and remains on the combined surface due to the decrease in adhesive strength with the space insertion structure (200).

[0089] However, in some cases, a portion of the above-described heterogeneous agent (RA) may stick to the space insertion structure (200) and remain on the space insertion structure (200).

[0090] The above release agent (RA) may, although it is unlikely, become contaminated and contain foreign substances or impurities during the process of being sprayed onto the mating surface in a spray manner. In this case, if the release agent (RA) sticks to the space insertion structure (200), it may cause a problem of non-curing of the second filling part (3440) to be described later.

[0091] Therefore, in order to prevent the above-described under-curing problem in advance, in the present invention, a cleaning step using a detergent or the like may be performed to remove the release agent (RA) remaining after removing the space insertion structure (200).

[0092] Referring to FIG. 7, a step may be performed in which the space insertion structure (200) is mounted on a circuit board (230) bonded to a first substrate portion (310) provided with a silicon-based material.

[0093] Here, the circuit board (230) may be equipped with at least one sensor (232) for performing a specific purpose, and as described above, the space insertion structure (200) may be provided with a lower space (SP1) for inserting the sensor (232).

[0094] Referring to FIG. 8, a step is performed in which the sensor (232) and the space insertion structure (200) are covered by a second substrate portion (320) provided with the silicon series material, so that the wafer-type sensor (300) illustrated in FIG. 9 can be manufactured.

[0095] Here, the space insertion structure (200) may be provided with an upper space (SP2) into which the partition wall portion (322) of the second substrate portion (320) can be inserted.

[0096] The above-mentioned partition wall (322) can improve the vacuum resistance performance in the chamber by dividing a plurality of sensors (232) mounted on the circuit board (230).

[0097] Hereinafter, the space insertion structure (200) after the second substrate portion (320) is bonded to the circuit board (230) or the first substrate portion (310) is defined as the first filling portion (200).

[0098] The above first filling part (200) may be a component inserted into the residual space (RS) other than the space where the sensor (232) is mounted to remove the residual space (RS) so as to prevent performance degradation due to vacuum, i.e., damage due to expansion, when the wafer-type sensor (300) according to the present invention is used in a vacuum state within a chamber.

[0099] Here, since the first filling portion (200) is provided in a solidified state, it is virtually difficult to completely fill the remaining space (RS).

[0100] If even a very small amount of residual space (RS) is generated, expansion is induced in the vacuum state within the chamber, making it impossible for the wafer-type sensor (300) to function properly.

[0101] For the above reasons, the present invention discloses a configuration for removing the residual space.

[0102] The wafer-type sensor (300) according to the present invention may include a second filling part (340) applied in a liquid form and provided through curing so as to prevent the creation of a residual space when the first filling part (200) is inserted into the residual space (RS) and thereby increase resistance to vacuum.

[0103] The second filling part (340) is indicated by a curved arrow in FIGS. 7 and 8, and the creation of the residual space is completely blocked due to the second filling part (340).

[0104] Meanwhile, the first filling part (200) and the second filling part (340) may be provided with the same series of materials to improve adhesive strength between each other, and may be provided with, for example, a silicone series of materials.

[0105] The second filling part (340) may have lower viscosity compared to the first filling part (200), which is to maximize fluidity into the finely formed space and more completely block the creation of residual space.

[0106] However, the adhesive strength of the second filling part (340) may be stronger than that of the first filling part (200), and thus the possibility of residual space being created even during continuous use of the wafer-type sensor (300) is minimized.

[0107] Meanwhile, in the above, it was explained that the release agent (RA) sprayed on the mating surface during the process of manufacturing the space insertion structure (200), i.e., the first filling part (200), is removed through a cleaning step because if it remains on the outer surface of the space insertion structure (200), it may cause a problem of non-curing of the second filling part (340) due to foreign substances or impurities.

[0108] This is because the curing of the second filling part (340) proceeds through a chemical reaction between the materials constituting the second filling part (340) while drying is in progress for a predetermined period of time. If foreign substances or impurities are present during this process, curing is not completed even after time passes and the curing is ultimately maintained in an uncured state.

[0109] For the above reasons, if there are foreign substances or impurities in the release agent (RA), they are removed through a cleaning step.

[0110] However, in some cases, the release agent (RA) may remain on the outer surface of the first filling part (200) in an uncontaminated state, and in this case, it does not cause a problem of uncuring of the second filling part (340), so it does not need to be removed through a cleaning step.

[0111] The release agent (RA) present on the outer surface of the first filling part (200) has the effect of reducing the occurrence of the residual space by increasing the filling density for the residual space (RS) when the first filling part (200) is inserted into the residual space (RS).

[0112] Therefore, whether or not to remove the above-mentioned release agent (RA) can be selectively performed depending on whether or not the above-mentioned release agent (RA) contains foreign substances or impurities.

[0113]

[0114] 3. Wafer-type sensor

[0115]

[0116] Figure 10 is a drawing for explaining a wafer-type sensor according to the present invention.

[0117]

[0118] Referring to FIG. 10, a wafer-type sensor (400) according to the present invention is for sensing whether static electricity is generated, and may include a first substrate portion (410), a second substrate portion (420), an insulating portion (430), and a compliant portion (450).

[0119] The first substrate portion (410) and the second substrate portion (420) can be manufactured from a silicon-based material and can provide an internal space (IS) for arranging a circuit board (440).

[0120] The circuit board (440) may be equipped with at least one sensor (442) for performing a specific purpose.

[0121] The above insulating portion (430) may be a component for blocking the current flow between the first substrate portion (410) and the second substrate portion (420) and defining the internal space (IS) in which the circuit board (440) is placed.

[0122] The above insulating portion (430) may be formed in a ring shape and may be manufactured from an insulating material such as glass or quartz.

[0123] The above-mentioned compliance part (450) may be a component that allows the internal space (IS) to be adapted to the atmosphere within the chamber in which the wafer-type sensor (400) is used.

[0124] The above compliance part (450) may be a component that prevents performance degradation due to vacuum, i.e., damage due to expansion, when the wafer-type sensor (400) is used in a vacuum state within a chamber.

[0125] The above-mentioned compliance part (450) enables the internal space (IS) to communicate with the atmosphere within the chamber, thereby allowing the wafer-type sensor (400) to flexibly respond to the vacuum state within the chamber.

[0126] The above-mentioned compliance part (450) is inserted into a hole (H) provided through the above-mentioned insulation part (430), and may be formed of a material that allows gas flow between the internal space (IS) and the atmosphere within the chamber, but prevents liquid flow.

[0127] Specifically, the above-mentioned compliance part (450) may be provided with a tube unit inserted into a hole (H) provided through the above-mentioned insulation part (430), and a selective penetration unit disposed inside the tube unit to block the flow of the liquid.

[0128] The above tube unit may be bonded to the inner surface defining the hole (H) by an adhesive, but the adhesive may be prevented from flowing into the interior.

[0129] For the above reasons, the tube unit may be formed of Teflon material, but is not necessarily limited thereto.

[0130] The above selective permeation unit may be provided in the form of a membrane or a porous three-dimensional shape, and may be formed, for example, of a membrane made of Gore-Tex material.

[0131] Meanwhile, the tube unit can be inserted into the hole (H) provided through the insulating part (430) in a state longer than the length of the hole (H), and then the protruding portion can be removed by cutting.

[0132] As described above, the wafer-type sensor (400) according to the present invention is connected to the atmosphere within the chamber by the internal space (IS) where the sensor (442) is placed due to the compliant portion (450), and thus, even if the atmosphere within the chamber becomes a vacuum, the flow of gas is permitted, thereby enabling flexible response to vacuum.

[0133]

[0134] Although the configuration and features of the present invention have been described above based on embodiments according to the present invention, the present invention is not limited thereto, and it is obvious to those skilled in the art that various changes or modifications can be made within the spirit and scope of the present invention, and therefore, it is made clear that such changes or modifications fall within the scope of the appended patent claims.

Claims

1. A substrate provided in a predetermined shape; and It includes a partition for dividing the above substrate into a plurality of partitioned areas; The above section is, A substrate for manufacturing a wafer-type sensor, characterized in that it is provided with an insulating material and inserted into a through-hole area formed on the substrate portion.

2. In paragraph 1, The above penetration area and the above compartment, A substrate for manufacturing a wafer-type sensor, characterized in that the above-mentioned partitioned region is provided in an annular shape so as to include a central region and at least one annular outer region radially outward from the central region.

3. In paragraph 1, A substrate for manufacturing a wafer-type sensor, characterized in that it further includes a filling portion that fills an empty space on the through-hole area after the partition is inserted into the through-hole area, thereby preventing a change in the position of the partition within the through-hole area.

4. In paragraph 3, The above filling part is, A substrate for manufacturing a wafer-type sensor, characterized in that the upper and lower surfaces of the partitions are non-existent so as to prevent current flow between the partitioned areas.

5. In paragraph 3, The above compartment and the filling section, A substrate for manufacturing a wafer-type sensor, characterized in that after a partition mother part that becomes the mother of the partition part is inserted into the penetration area and a filling mother part that becomes the mother of the filling part is filled, the substrate is manufactured to have the same predetermined thickness as the substrate part through processing of at least one of the upper and lower surfaces.

6. In paragraph 3, The above substrate portion, the partition portion and the filling portion, A substrate for manufacturing a wafer-type sensor, characterized in that the substrate is manufactured to the predetermined thickness by processing at least one of the upper and lower surfaces, after the partitioned portion, which is the mother portion of the partitioned portion, is inserted into the penetration region formed in the substrate mother portion having a predetermined thickness or more, and the filled portion, which is the mother portion of the filled portion, is filled.

7. In paragraph 1, The above section is, A substrate for manufacturing a wafer-type sensor, characterized in that the cross-sectional shape is defined through cutting processing of at least one of the upper and lower surfaces.

8. In paragraph 7, The above filling part is, A substrate for manufacturing a wafer-type sensor characterized in that the upper and lower surfaces of the partition are not present by the above cutting process.

9. A wafer-type sensor comprising a substrate for manufacturing a wafer-type sensor according to any one of claims 1 to 8.

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