Systems and methods for refurbishing and qualifying a material receptacle for an EUV radiation source

Abstract

An apparatus for refurbishing a material receptacle having process material stored therein includes a support frame, a tilt mechanism, a mounting structure, a rotation mechanism, and a container. The tilt mechanism is coupled to the support frame. The mounting structure is coupled to the tilt mechanism. The tilt mechanism inclines the mounting structure relative to the support frame. The mounting structure supports the material receptacle. The rotation mechanism rotates the material receptacle about an axis different form a rotational axis of the tilt mechanism. The container is coupled to the support frame and receives the process material from the material receptacle.

Description

SYSTEMS AND METHODS FOR REFURBISHING AND QUALIFYING A MATERIALRECEPTACLE FOR AN EUV RADIATION SOURCECROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims priority of US Application 63 / 690,678, which was filed on September 4, 2024, US Application 63 / 692,878, which was filed on September 10, 2024, and US Application 63 / 813,492, which was filed on May 28, 2025, which are incorporated herein by reference in their entireties.FIELD

[0002] The present disclosure relates to plasma materials used in radiation sources of lithographic apparatuses.BACKGROUND

[0003] Illumination generated by a radiation source can be used by tools used for semiconductor manufacturing processes. Examples of such exposure apparatuses include a lithographic apparatus, a metrology or inspection apparatus (e.g., a mask inspection apparatus, an actinic mask inspection apparatus, a defect inspection apparatus, a dimension measurement apparatus, or the like), among others.

[0004] A lithographic apparatus is a machine constructed to apply a desired pattern onto a substrate. A lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs). A lithographic apparatus can project a pattern from a patterning device (e.g., a mask) onto a layer of radiation-sensitive material (e.g., a photoresist or resist) provided on a substrate. To project a pattern on a substrate, a lithographic apparatus can use electromagnetic radiation. The wavelength of radiation can determine the minimum size of features that are to be formed on the substrate, with smaller wavelengths allowing for smaller features. For example, a lithographic apparatus that uses extreme ultraviolet (EUV) radiation (having a wavelength within the range 4-20 nm, for example 6.7 nm or 13.5 nm) can print smaller features on a substrate as compared to a lithographic apparatus that uses radiation with a wavelength of 193 nm. A drawback of operating at EUV wavelengths is that many optical materials can absorb EUV illumination, thereby attenuating EUV illumination intensity. Reflective optics can help mitigate attenuation. EUV lithography can implement one or more reflective surfaces to guide EUV radiation along an optical path.

[0005] A mask inspection apparatus (e.g., actinic mask inspection apparatus) is an apparatus that can be used to measure dimensions or detecting defects in masks or mask blanks. Mask blanks used in EUV lithography generally have a multilayer structure that functions as a Bragg reflector. Layers of the multilayer structure can be altematingly molybdenum and silicon. The projected pattern in a lithographic process can become deformed if a defect is present in the multilayer structure. Therefore,a mask inspection is an important, and often necessary, step of mass-production lithographic processes to check whether a defect is present in a mask. EUV mask inspection can be used for several purposes and in several different stages of lithographic fabrication.

[0006] Firstly, mask inspection can be used for the detection of phase defects that occur in mask blanks. Such phase defects can occur during the manufacturing of the multilayer stack of the mask blank. If undetected, phase defects are reproduced on all chips that correspond to the part of the mask containing the phase defects. Such phase defects can be correctly detected by using the same or similar actinic EUV wavelength as the lithography tool (e.g., 13.5 nm). Secondly, at a stage associated with quality control of EUV patterned masks, patterned mask inspection masks can be inspected. Mask inspection can be used to measure critical dimensions on the mask blank. In addition to phase defects, absorber pattern defects on the surface can be detected. Thirdly, mask inspection can be used for simulating exposure and determining the deterioration of optical contrast of a defect detected in the actinic inspection. Fourthly, the mask inspection can be used for optical proximity correction (OPC) evaluation or during a mask repair process to improve pattern transfer fidelity. Further, it can be used for inspecting optical contrast after fixing the defect. In addition to the above, mask inspection can also be used to measure small particle / amplitude effects.

[0007] A metrology apparatus is an apparatus that measures critical dimension and inspect various aspects of the wafer during the semiconductor manufacturing process. A metrology apparatus can also measure and characterize physical properties of materials and components. The metrology apparatus is a precision instrument that ensures product quality and process control. In at least one embodiment, the metrology apparatus employs EUV radiation to inspect and measure dimensions of targets on the substrate.

[0008] Plasma-based EUV sources can use target materials that, when in a plasma state, emit electromagnetic radiation with wavelengths in the EUV range. The target material, such as tin, can be collected in a tin catch system that is cleaned periodically.SUMMARY

[0009] Embodiments of the present disclosure provides an apparatus and method for refurbishing a material receptacle used in an EUV source.

[0010] In some embodiments, an apparatus for refurbishing a material receptacle having target material stored therein comprises a support frame, a tilt mechanism, a mounting structure, a rotation mechanism, and a container. The tilt mechanism is coupled to the support frame. The mounting structure is coupled to the tilt mechanism. The tilt mechanism is configured to incline the mounting structure relative to the support frame. The mounting structure is configured to support the material receptacle. The rotation mechanism is configured to rotate the material receptacle about an axis different form a rotational axis of the tilt mechanism. The container is coupled to the support structure. The container is configured to receive the target material from the material receptacle.

[0011] In some embodiments, a method for refurbishing a material receptacle comprises mounting the material receptacle on a mounting mechanism positioned on a support structure. The method also comprises tilting the material receptacle to a first inclination angle. The method also comprises heating the material receptacle to melt target material inside the material receptacle. The method also comprises directing molten target material from the material receptacle towards a container disposed at the support structure.

[0012] In some embodiments, an apparatus for refurbishing a material receptacle having target material stored therein comprises a tilt mechanism, a mounting structure, a container, and a rotation mechanism. The mounting structure is coupled to the tilt mechanism. The tilt mechanism is configured to incline the mounting structure. The mounting structure is configured to support the material receptacle. The rotation mechanism is disposed on the mounting structure. The rotation mechanism is configured to rotate at least a portion of the mounting structure to reduce a distance between an access structure of the material receptacle and an access structure of the container.

[0013] In some embodiments, a qualification system for qualifying a material receptacle comprises a support structure, a dummy connector, and a flange. The support structure is configured to securely support the material receptacle. The dummy connector is configured to couple with an access structure of the material receptacle. The flange comprises an access structure. The flange is configured to couple to the dummy connector and to provide a fluidic connection to an interior of the material receptacle via the dummy connector and the access structure of the flange.

[0014] In some embodiments, a method for qualifying a material receptacle comprises determining whether a room temperature response of a thermocouple of the material receptacle is within a response threshold. The method also comprises determining whether a resistance of a heating device of the material receptacle is within a resistance threshold. The method also comprises applying a current to the heating device to heat the material receptacle. The method also comprises determining whether heat generated in response to the applied current is within a heating threshold. The method also comprises cooling the material receptacle. The method also comprises determining whether a cooldown rate of the material receptacle is within a cooling rate threshold.

[0015] In some embodiments, a non-transitory computer-readable medium stores a set of instructions that is executable by at least one processor of an apparatus to cause the apparatus to perform operations for qualifying a material receptacle. The operations comprise determining whether a room temperature response of a thermocouple of the material receptacle is within a response threshold. The operations also comprise determining whether a resistance of a heating device of the material receptacle is within a resistance threshold. The operations also comprise, based on a current applied to the heating device to heat the material receptacle, determining whether heat generated in response to the applied current is within a heating threshold. The operations also comprise, based on cooling the material receptacle, determining whether a cooldown rate of the material receptacle is within acooling rate threshold.BRIEF DESCRIPTION OF FIGURES

[0016] Embodiments of the invention will now be described, by way of example only, with reference to the accompanying schematic drawings, in which:

[0017] FIG. 1 depicts an example lithographic system comprising a lithographic apparatus and a radiation source, consistent with embodiments of the present disclosure.

[0018] FIG. 2 depicts an example system for (actinic) mask inspection, consistent with embodiments of the present disclosure.

[0019] FIG. 3 depicts an example radiation source, consistent with embodiments of the present disclosure.

[0020] FIG. 4 depicts an example of an exploded view of a catch system for capturing target material, consistent with embodiments of the present disclosure.

[0021] FIGS. 5A-5D depict an example catch system refurbishment apparatus in different configurations, consistent with embodiments of the present disclosure.

[0022] FIG. 6 depicts an example catch system refurbishment apparatus, consistent with embodiments of the present disclosure.

[0023] FIG. 7 depicts an example catch system refurbishment apparatus, consistent with embodiments of the present disclosure.

[0024] FIG. 8 depicts a flowchart of an example method for refurbishing a material receptacle, consistent with embodiments of the present disclosure.

[0025] FIG. 9 depicts an example qualification system for a refurbished catch system, consistent with embodiments of the present disclosure.

[0026] FIG. 10 depicts an example qualification system for a refurbished catch system, consistent with embodiments of the present disclosure.

[0027] FIG. 11 depicts a flowchart of an example method for qualifying a material receptacle, consistent with embodiments of the present disclosure.

[0028] FIG. 12 depicts a flow chart of an example method for qualifying a material receptacle, consistent with embodiments of the present disclosure.DETAILED DESCRIPTION

[0029] Reference will now be made in detail to exemplary embodiments, examples of which are illustrated in the drawings. The following description refers to the accompanying drawings in which the same numbers in different drawings represent the same or similar elements unless otherwise represented. The implementations set forth in the following description of exemplary embodiments do not represent an exhaustive set of implementations. Instead, they are merely examples of apparatuses, systems, and methods consistent with aspects related to subject matter that may be recited in theappended claims. For example, although some embodiments are described in the context of EUV- based lithographic apparatuses, the present disclosure is not so limited. Unless infeasible, embodiments described herein can be implemented in any type of lithographic apparatus.

[0030] Electronic devices are constructed of circuits formed on a substrate. The substrate is typically of a semiconductor material (e.g., silicon) and is often referred to as a wafer by persons of skill in the art. Many circuits may be formed together on the same piece of silicon and are called integrated circuits or ICs. With advancements in technology, the size of these circuits has decreased dramatically so that many more of them can fit on the substrate. For example, an IC chip in a smart phone can be as small as a fingernail and yet may include over 2 billion transistors, the size of each transistor being less than 1 / 1, 000th the width of a human hair.

[0031] Making these ICs with extremely small structures or components is a complex, timeconsuming, and expensive process, often involving hundreds of individual steps. Errors in even one step have the potential to result in defects in the finished IC, rendering it useless. Thus, one goal of the manufacturing process is to avoid such defects to maximize the number of functional ICs made in the process, that is, to improve the overall yield of the process.

[0032] Speed, or throughput, has been a traditionally important metric alongside yield. Throughput is a measurable quantity that characterizes the manufacture speed of a fab (e.g., number of IC units produced per unit time). Throughput has become even more important in view of recent global chip shortages. As there are multiple steps in the fabrication of a chip device (e.g., multiple steps for multiple layers), each step can have a characteristic throughput. For example, a throughput value can be assigned to how quickly a lithographic system can conduct an illumination optimization process. Innovations in the design or functions of source optimizers can increase throughput or resolve problems in another aspect while mitigating adverse impact to throughput.

[0033] Yield is a metric that characterizes failure rate in device fabrication, which relates to cost and efficiency. Yield can be defined as a ratio of all the wafers that are produced by a fab to the number of wafers that were introduced to the fab. Or yield can be the number of working chips that survive the device fabrication process performed on a wafer to the number of potential chips that can be fabricated from that wafer in the ideal case of zero failure. As some wafers or chips fail during fabrication, the overall yield is less than 100%. For example, to obtain a 75% yield for a 50-step process (where a step can be indicative of the number of layers formed on a wafer), each individual step should have a yield greater than 99.4%. In contrast, if individual steps have a yield of 95%, the compounding errors at each step result in an overall process yield as low as 7-8%. Every wafer or chip lost during fabrication is a sunk cost and lost time for the fab.

[0034] During the semiconductor manufacturing process, to achieve lithographic prints of device structures with a high yield, small wavelength illumination (e.g., EUV wavelength) can be used to print structures that are smaller compared to limitations of using larger wavelengths. In a plasmabased EUV source, a plasma can be created by delivering a high power laser to a target material (alsocalled as a process material). To prevent contamination of the environment in the radiation source, the tin can be collected in an accumulation area, such as a tin catch system. Since space is finite, a certain amount of accumulation triggers a maintenance action, which causes machine downtime and throughput reduction. Catch systems for target materials like tin are in high demand with limited supply. Embodiments described herein provide a cost-effective and fast method for refurbishing material catch systems, as well as testing and qualifying the refurbished material catch systems for return to operation.

[0035] Objects and advantages of the disclosure can be realized by the elements and combinations as set forth in embodiments described herein. However, embodiments of the present disclosure are not necessarily required to achieve such exemplary objects or advantages. Some embodiments can achieve a different feature or enhancement without necessarily achieving any expressly stated object or advantage.

[0036] As used herein, unless specifically stated otherwise, the term “or” encompasses all possible combinations, except where infeasible. For example, if it is stated that a component can comprise A or B, then, unless specifically stated otherwise or infeasible, the component can comprise A, or B, or A and B. As a second example, if it is stated that a component can comprise A, B, or C, then, unless specifically stated otherwise or infeasible, the component can comprise A, or B, or C, or A and B, or A and C, or B and C, or A and B and C.

[0037] Relative dimensions of components in drawings may be exaggerated for clarity. Within the following description of drawings, the same or like reference numbers refer to the same or like components or entities, and only the differences with respect to the individual embodiments are described.

[0038] The term “patterning device” may be considered synonymous with similar terms of art, such as “reticle” or “mask.” The term “patterning device” used herein should be broadly interpreted as referring to any device that can be used to impart a pattern on a cross section of a radiation beam. The radiation beam then can recreate the pattern in a target portion of a substrate.

[0039] The term “projection system” used herein should be broadly interpreted as encompassing any type of projection system, including refractive, reflective, catadioptric, magnetic, electromagnetic, or electrostatic optical systems, or any combination thereof, as appropriate for the exposure radiation being used, or for other factors such as the use of an immersion liquid or the use of a vacuum. Any use of the term “projection lens” herein may be considered as synonymous with the more general term “projection system.”

[0040] Illumination can be understood to be a form of radiation. Hence, the terms “radiation” and “illumination” can be used herein interchangeably.

[0041] FIG. 1 depicts an example lithographic system 100 comprising a radiation source SO and a lithographic apparatus LA, consistent with embodiments of the present disclosure. The radiation source SO can generate an EUV radiation beam B and to supply the EUV radiation beam B to thelithographic apparatus LA. The lithographic apparatus LA can comprise an illumination system IL, a support structure MT, a projection system PS, and a substrate table WT. Support structure MT can support a patterning device MA (e.g., a mask). Substrate table WT can support a substrate W.

[0042] Illumination system IL can condition EUV radiation beam B before EUV radiation beam B is incident upon the patterning device MA. Illumination system IL can comprise a faceted field mirror device 10 and a faceted pupil mirror device 11. Faceted field mirror device 10 and faceted pupil mirror device 11 together provide the EUV radiation beam B with a desired cross-sectional shape and a desired intensity distribution. Illumination system IL can comprise other mirrors or devices in addition to, or instead of, faceted field mirror device 10 and faceted pupil mirror device 11.

[0043] After being conditioned, EUV radiation beam B can interact with patterning device MA. As a result of this interaction, a patterned EUV radiation beam B’ is generated. The projection system PS is configured to project patterned EUV radiation beam B’ onto substrate W. Projection system PS can comprise a plurality of mirrors (e.g., mirrors 13 and 14) that project patterned EUV radiation beam B’ onto substrate W held by substrate table WT. Projection system PS can apply a reduction factor to patterned EUV radiation beam B’, thus forming an image with features that are smaller than corresponding features on patterning device MA. For example, a reduction factor of 4 or 8 can be applied. Although projection system PS is illustrated as having two mirrors 13 and 14 in FIG. 1, projection system PS can include a different number of mirrors (e.g., six or eight mirrors).

[0044] Substrate W can include previously formed patterns. Where this is the case, lithographic apparatus LA can align the image formed by patterned EUV radiation beam B’ with the pattern that was previously formed on substrate W.

[0045] In some embodiments, a relative vacuum at a pressure below atmospheric pressure is provided in radiation source SO, in illumination system IL, or in projection system PS. The rarified gas can allow one or more features. For example, a small amount of gas (e.g. hydrogen) allows for better management of tin-based contamination in tin-based EUV sources.

[0046] Lithographic apparatus LA and radiation source SO described herein can be used for performing patterning process for a circuit layout. A circuit layout patterning method can comprise receiving a substrate with a photoresist layer. The method can also comprise directing EUV radiation from a radiation source to the photoresist layer to form a patterned photoresist layer. The method can also comprise developing and etching the patterned photoresist layer to form the circuit layout.

[0047] Radiation source SO can be a laser produced plasma (LPP) source. A laser system 1 (e.g., a CO2 laser) can be arranged to deposit energy via a laser beam 2 into a target material (sometimes referred to as a fuel). In some embodiments, the target material is also called as a process material used during the manufacturing process. Droplet generator 3 can provide the target material in the form of liquid droplets. The target material can be tin (Sn). Although tin is referred to in the following description, any material having an emission spectrum suitable for forming radiation beam B can be used. The target material may, for example, be in liquid form, and may, for example, be a metal oralloy. Droplet generator 3 can comprise a nozzle configured to direct droplets of the target material along a trajectory towards a plasma formation region 4 (laser is focused here, hence it is sometimes referred to as primary focus (PF)). Laser beam 2 can be incident upon the droplets at plasma formation region 4. The deposition of laser energy into the target material can create a plasma 7 at plasma formation region 4. Radiation (e.g., EUV radiation) can be emitted from plasma 7 during deexcitation and recombination of electrons with ions of plasma 7.

[0048] The EUV radiation from plasma 7 can be collected and focused by a collector 5. Collector 5 comprises, for example, a near-normal incidence radiation collector (sometimes referred to more generally as a normal -incidence radiation collector). Collector 5 can comprise a multilayer mirror structure arranged to reflect EUV radiation (e.g., EUV radiation having a desired wavelength such as 13.5 nm). Collector 5 can have an ellipsoidal configuration having two focal points. A first one of the focal points can be at the plasma formation region 4. A second one of the focal points can be at an intermediate focus 6.

[0049] Laser system 1 can be spatially separated from radiation source SO. Where this is the case, laser beam 2 can be passed from the laser system 1 to the radiation source SO with the aid of a beam delivery system (not shown) comprising, for example, suitable directing mirrors or a beam expander, or other optics. Laser system 1, radiation source SO, and the beam delivery system can together be considered to be a radiation system.

[0050] Radiation that is reflected by collector 5 can form EUV radiation beam B. EUV radiation beam B can be focused at intermediate focus 6 to form an image at intermediate focus 6 of plasma 7 at plasma formation region 4. The image at intermediate focus 6 can act as a virtual radiation source for illumination system IL. The radiation source SO can be arranged such that intermediate focus 6 is located at or near to an opening 8 in an enclosing structure 9 of radiation source SO.

[0051] Although FIG. 1 depicts the radiation source SO as a laser produced plasma (LPP) source, any suitable source such as a free electron laser (FEL) or a discharge produced plasma (DPP) source can be used to generate EUV radiation.

[0052] FIG. 2 depicts an example radiation source 200, consistent with embodiments of the present disclosure. In some embodiments, radiation source 200 is provided as an alternative to radiation source SO in FIG. 1. A material source 202 can provide material (e.g., tin or xenon) for plasma production to a rotating element 204. Rotating element 204 (e.g., one or more rotating elements) can comprise a rotating wheel, cylinder, drum, or variations thereof. Target material can be provided in liquified form to the one or more rotating elements by means of a target material bath or spray. Gaseous target material can be sprayed onto the rotating element to replace target material transformed to plasma. Alternatively, target material can also be provided in solid or frozen form.

[0053] In some embodiments, rotating element 204 is cold enough to solidify the target material (e.g., tin or xenon). An excitation device 206 can be used to assist in plasma formation (e.g., by irradiating plasma formation region 212). Excitation device 206 can be a laser (e.g., a solid-state orgas laser). Reflective optics 208, such as one or more mirrors, can be used to reflect the EUV light generated to an intermediate focus 210. Reflective optics 208 can comprise a collector mirror device. A flow of buffer gas 214 (e.g., hydrogen) can be provided to mitigate debris accumulation in radiation source 200. A vacuum pump 216 can also be provided to maintain a desired pressure (e.g., partial vacuum) in radiation source 200.

[0054] FIG. 3 depicts an example mask inspection system 300, consistent with embodiments of the present disclosure. Mask inspection system 300 can be used to identify or inspect defects in a mask to be used in a lithographic apparatus (e.g., lithographic apparatus LA of FIG. 1). Mask inspection system 300 can comprise a radiation source 302, an illumination system 304, and a detection system 306. A mask 308 (e.g., patterning MA of FIG. 1) is placed on a mask stage 310. Mask 308 can be illuminated by illumination system 304, which can guide radiation from radiation source 302 via reflection. Detection system 306 can guide radiation scattered from the illuminated mask 308 via reflection. The radiation from illuminated mask 308 can be received at a detector 312 (e.g., an image capture device). Defects of mask 308 can be determined based on radiation detected by detector 312.

[0055] FIG. 4 depicts an exploded view of an example catch system 400 for capturing target material, consistent with embodiments of the present disclosure. In some embodiments, catch system 400 is disposed downstream (e.g., across from) of droplet generator 3 (FIG. 1) so as to receive target material that has passed through plasma formation region 4 (FIG. 1). Catch system 400 can comprise a holding tank 402 (e.g., a tin catch bucket or receptacle) and a heating device 404 (e.g., a heater jacket). Catch system 400 can also be referred to as a material receptacle (e.g., a receptacle for catching tin material).

[0056] As described above, target material used for generating plasma 7 (FIG. 1) can be in the form of liquid droplets (e.g., tin droplets) that are launched along a trajectory towards a plasma formation region 4 (FIG. 1). Liquid material can also be used in radiation source 200 (FIG. 2). When the liquid tin reaches the end of its trajectory or is otherwise removed from the radiation source, the liquid tin is collected and subsequently stored by catch system 400. Catch system 400 can serve as a holding area to prevent excess liquid tin from contaminating enclosing structure 9 of radiation source SO (FIG. 1) or radiation source 200 (FIG. 2).

[0057] Some embodiments are described in the context of using tin as target material. However, it is to be appreciated that embodiments described herein can be implemented using any material having an emission spectrum suitable for forming a beam of radiation for a lithographic or a metrological process. Unless infeasible, reference to components with the term “tin” (e.g., a tin catch bucket) are interchangeable with more general counterpart components (e.g., a target material catch bucket, droplet catch bucket, plasma material catch bucket, or the like).

[0058] Holding tank 402 can comprise one or more access structures for allowing fluid communication with the interior holding tank 402. Two example access structures 406 and 408 are illustrated in FIG. 4. Materials that can flow through an access structure of holding tank 402 can beliquid tin, a buffer gas, or the like. Access structures 406 and 408 can be provided with suitable connection interface structures (e.g., a flange) to achieve a sealed connection with other systems (e.g., for connecting holding tank 402 to enclosing structure 9 of radiation source SO (FIG. 1) or radiation source 200 (FIG. 2)). In some embodiments, a dimension of access structure 406 is different from that of access structure 408. In some embodiments, a dimension of access structure 406 is identical to that of access structure 408.

[0059] Heating device 404 can be shaped to conform to a shape of holding tank 402 (e.g., to maximize contact area). For ease of assembly and removal, heating device 404 can comprise two or more sections. When assembled, heating device 404 can wrap around holding tank 402 to provide efficient heating. Heating device 404 can have heating elements (e.g., wires for conducting electrical current for heating). Since target materials, such as tin, solidify when below melting point (e.g., about 232 °C fortin), heating device 404 can maintain a temperature above melting point of the target material held in holding tank 402. Once the temperature exceed the melting point, the target materials transition into a liquid state and becomes flowable. Consequently, target material can be evenly distributed in holding tank 402 and build up near access structures 406 or 408 can be prevented, thereby preventing blockage.

[0060] In some embodiments, access structures 406 and 408 are arranged circumferentially offset when view along a lengthwise axis 410. For example, access structures 406 and 408 can be disposed diametrically opposite from one another along the body of holding tank 402 or arranged at a right angle to each other when view along lengthwise axis 410. The shape of catch system 400, holding tank 402, or heating device 404 can be an elongated shape (e.g., a long cylinder). A longest dimension of the elongate shape can be parallel to lengthwise axis 410. Access structure 406 can be disposed proximal to a first end of the elongate shape. Access structure 408 can be disposed at a second end of the elongate shape that is opposite the first end (e.g., disposed distally from access structure 406). A spread of different locations for access structures can allow for certain features and capabilities, as will be apparent in description of refurbishment embodiments below.

[0061] In some embodiments, a buffer gas is provided to holding tank 402 as catch system 400 performs its function of catching target material from radiation source SO (FIG. 1) or radiation source 200 (FIG. 2). The buffer gas can allow a variety of functions. One example function is providing nitrogen gas to expel oxygen from holding tank 402, thereby preventing oxidation of captured tin in holding tank 402. Tin can oxidize at elevated temperatures (e.g., resulting from heating device 404). Hence, a nitrogen-rich environment can be conducive to maintaining high tin-purity for purposes of reuse or recycle.

[0062] In some embodiments, the filling of holding tank 402 to capacity triggers a maintenance action. Maintenance actions result in taking the lithographic or metrological apparatus offline, which induce extra costs, inefficiency, and machine downtime. To mitigate drawbacks of a maintenance action, it is desirable for the maintenance action to be as brief as possible so that the lithographic ormetrological apparatus can resume operation. The maintenance action can include removal of the catch system 400 from radiation source SO (FIG. 1) or radiation source 200 (FIG. 2) and replacement with an empty catch system. There are several methods by which an empty catch system can be provided. In one example, a costly option is to acquire a new catch system directly from a manufacturer. In another example, a refurbished catch system is acquired for replacing the full catch system 400. Catch system 400 itself can be refurbished via robust purification process that can be time consuming and costly (though possibly less costly than acquiring a new catch system).

[0063] In some embodiments, refurbishment of catch system 400 can comprise several operations, such as disassembly of separable components (e.g., removal of heating jackets of heating device 404), baking of holding tank 402 (e.g., in a baking oven), evacuating the baking oven (low pressure bake), draining of molten tin from holding tank 402, and qualification of the refurbished catch system. Each refurbishment operation can have an associated time burden and cost burden. Furthermore, each refurbishment operation can prompt the use of specialized tools for each step in the refurbishment process (e.g., disassembly rack and tools, draining tool, vacuum oven, qualification tool, and the like). Due to the specialized nature of the refurbishment process and tools, the current rate of catch system refurbishment worldwide cannot keep pace with demand.

[0064] A problem with acquisition of replacement catch systems (whether new or refurbished) is the available supply. High demand and low supply of catch systems can cause a backlog, leading to unexpected extended downtime of lithographic apparatuses. It is noted that a lithographic or a metrological apparatus used in a fab can process hundreds of wafers per hour. Unavailability of a replacement catch system for days or weeks can cause tremendous loss of productivity in a fab. Global chip shortages have exacerbated the need for high-throughput lithographic production, which is impeded by maintenance actions and machine downtime. Hence, it is desirable to provide a simplified, cost-efficient, and time -efficient refurbishment tool to quickly refurbish catch system 400 and recirculate it in the market.

[0065] FIGS. 5A-5D depict an example catch system refurbishment apparatus 500 for refurbishing a material receptacle, consistent with embodiments of the present disclosure. In particular, FIGS. 5A- 5D depict catch system refurbishment apparatus 500 in different configurations via articulation of movable components.

[0066] In some embodiments, catch system refurbishment apparatus 500 comprises a support frame 502, a tilt mechanism 504, a mounting structure 506, and a container 508 (e.g., a refurbishment catch bucket or receptacle). Mounting structure 506 is coupled to a rotation mechanism 510. Tilt mechanism 504 couples support frame 502 and mounting structure 506 to one another. Tilt mechanism 504 allows mounting structure 506 to be inclined relative to a top surface of support frame 502. For illustration purposes, an inclination of mounting structure 506 is indicated by inclination plane 512. FIG. 5A depicts a horizontal position (e.g., zero inclination) of mounting structure 506 with respect to a vertical direction of gravity (shown as a gravity vector 514).

[0067] Mounting structure 506 supports a material receptacle 516. In some embodiments, material receptacle 516 can be a catch system (e.g., catch system 400 (FIG. 4)). Catch system refurbishment apparatus 500 is used for refurbishing catch system 400 (FIG. 4). Material receptacle 516 is at least partially fdled with target material 518. Target material 518 can be solidified or fluidified material used for plasma production in radiation source SO (FIG. 1) or radiation source 200 (FIG. 2), which has been captured and collected into material receptacle 516. Material receptacle 516 includes access structures 520 and 522. Access structure 520 is disposed distally from access structure 522 (e.g., each access structure disposed proximal to opposite ends of material receptacle 516).

[0068] Material receptacle 516 can be mounted on mounting structure 506 by coupling to rotation mechanism 510. Rotation mechanism 510 can rotate material receptacle 516 about an axis 524. Axis 524 extends lengthwise through a center line of material receptacle 516 and differs from a rotation axis of tilt mechanism 504. That is, axis 524 can be oriented at a non-zero angle with respect to the rotation axis of tilt mechanism 504. As an example, FIGS. 5A-5D depict axis 524 as being oriented substantially perpendicular to the rotation axis of tilt mechanism 504 (e.g., the rotation axis of tilt mechanism 504 is oriented out of plane of the page). In FIG. 5A, container 508 is depicted in an empty state and ready to receive target material 518.

[0069] Referring to FIG. 5B, in some embodiments, mounting structure 506 is adjusted to a non-zero incline state. Tilt mechanism 504 can maintain or hold an inclination angle of the mounting structure 506 at a predetermined angle with respect to a horizontal plane that is perpendicular to gravity vector 514. The predetermined angle (e.g., the angle between inclination plane 512 and the horizontal plane) is between about 60 degrees to about 80 degrees. As will be explained further below, a technical significance of this angle range relates to access structures 520 and 522. To hold a stable inclination angle, additional supports can be used. For example, catch system refurbishment apparatus 500 can also comprise one or more telescopic supports 526. The one or more telescopic supports 526 can support mounting structure 506 at the predetermined angle. Target material 518 is depicted in its solid (non-flowing) state in FIG. 5B.

[0070] Referring to FIG. 5C, rotation mechanism 510 is used to rotate material receptacle 516 about axis 524. In some embodiments, material receptacle 516 rotates around axis 504 by about from + / - 30 degrees to about + / - 60 degrees to enhance the flow of target material 518. The rotation greater than 60 degrees does not yield a significant improvement, in some instances. In some embodiments, when catch system 400 (FIG. 4) is mounted as material receptacle 516 on catch system refurbishment apparatus 500, it can be done so while heating device 404 is still wrapped around holding tank 402 (FIG. 4). Heating device 404 can be used to heat and melt target material 518, thereby avoiding a reliance on an oven for the heating function. Consequently, a cost burden and time burden associated with disassembly and oven baking of catch system 400 (FIG. 4) can be avoided. In other words, the refurbishment process performed using catch system refurbishment apparatus 500 saves time and cost by avoiding one or more disassembly operations, as well as avoiding complex operations associatedwith using an oven. It is to be appreciated that target material 518 can be heated at any point in time after material receptacle 516 is mounted on catch system refurbishment apparatus 500. Target material 518 is depicted in its melted state and has collected to one side of material receptacle 516 under the influence of gravity.

[0071] Referring to FIG. 5C, in some embodiments, a gas supply 528 is coupled to access structure 522. Gas supply 528 can be used to introduce a buffer gas in material receptacle 516. A noninteracting gas (e.g., inert gas, nitrogen, or the like) is used to purify the interior of material receptacle 516 and prevent target material 518 from undergoing undesirable chemical reactions (e.g., oxidation). The introduction of chemically non-interacting gasses assists with facilitating the recycle and reuse of target material 518. FIG. 5C illustrates a technical significance of the inclination angle being between about 60 degrees to about 80 degrees with respect to the horizontal (shown as angle 0). The angle greater than 60 degrees prevents target material 518 from flowing toward access structure 522 when a valve coupled to access structure 522 is open to allow the buffer gas into material receptacle 516, in some instances. The angle greater than 80 degrees does not yield a significant improvement, in some instances. A vent can be included with the connector of gas supply 528 or another access structure (not shown) can be used as a vent to relieve pressure build up as the buffer gas fills material receptacle 516.

[0072] Referring to FIG. 5D, access structure 520 is coupled to a valve connector. The valve connector can be opened to allow molten target material 518 to flow out of material receptacle 516 via access structure 520. The flow of target material 518 is captured by container 508. Container 508 includes an access structure 530 (e.g., an opening, a flange connector, or the like). A conduit (not shown) can be coupled to, and between, access structures 520 and 530 to guide the flow of target material 518 and prevent spillage. As material receptacle 516 is emptied of target material 518, the inclination angle can be reduced as the risk of contaminating access structure 522 decreases. In some embodiments, target material 518 flows from a vessel of radiation source SO (FIG. 1) through either access structure 520 or access structure 522 into material receptacle 516. In some embodiments, material receptacle 516 includes a third access structure (not shown) to receive target material 518 from the radiation source vessel.

[0073] FIG. 6 depicts an example catch system refurbishment apparatus 600 for refurbishing a target material receptacle, consistent with embodiments of the present disclosure. In some embodiments, catch system refurbishment apparatus 600 in FIG. 6 is a perspective illustration of catch system refurbishment apparatus 500 (FIGS. 5A-5D) with an inclination angle corresponding to the configuration of FIGS. 5B and 5C. Hence, elements that correspond to one another across figures use a similar numbering scheme, with the left-most digit indicating the figure in which the element is first introduced and the two right-most digits being common for corresponding elements. The structures and functions of the elements of FIG. 6 are as described above with respect to their corresponding counterparts in FIGS. 5A-5D, which include support frame 602, tilt mechanism 604, mountingstructure 606, container 608, rotation mechanism 610, gravity vector 614, material receptacle 616 (e.g., catch system 400 (FIG. 4)), access structures 620 and 622, one or more telescopic supports 626, and access structure 630. Inclusion of other elements that are not shown (e.g., a gas supply or a third access structure) can be inferenced from the description of FIGS. 5A-5D.

[0074] In some embodiments, container 608 comprises additional features, such as a heating system with one or more heating elements 632 or a funnel structure 634. In some scenarios, it is desirable to maintain target material 518 in a liquid state when drained into container 608. Hence, one or more heating elements 632 can be used to heat the interior of container 608 to a temperature that is above the melting point of the drained material. In some instances, it can be more convenient and faster to drain the target material into container 608 at ambient conditions. Hence, the liquid target material can be caught with a wide-mouth structure, such as funnel structure 634. Alternatively, a flex hose can be connected between access structure 620 and 630 to provide a sealed drain path.

[0075] FIG. 7 depicts a functional diagram of an example catch system refurbishment apparatus 700 for refurbishing a material receptacle, consistent with embodiments of the present disclosure. In some embodiments, catch system refurbishment apparatus 700 in FIG. 7 can represent the functions of catch system refurbishment apparatuses 500 and 600 (FIGS. 5A-5D and 6). Hence, elements that correspond to one another across figures use a similar numbering scheme, with the left-most digit indicating the figure in which the element is first introduced and the two right-most digits being common for corresponding elements. The structures and functions of the elements of FIG. 7 are as described above with respect to their corresponding counterparts in FIGS. 5A-5D and 6, which can include container 708, material receptacle 716 (e.g., catch system 400 (FIG. 4)), access structures 720 and 722, gas supply 728, and access structure 730. Inclusion of other elements that are not shown (e.g., heating elements) can be inferenced from the description of FIGS. 5A-5D and 6.

[0076] In some embodiments, catch system refurbishment apparatus 700 can also comprise a valve 736 and a controller 738. Valve 736 can be an electrically controlled valve (e.g., solenoid valve). Controller 738 can electrically control powered components, such as heating elements or valve 736. Gas supply 728 can provide a buffer gas (e.g., nitrogen) to material receptacle 716 and container 708. The temperature of the heating elements can be controlled (e.g., using a controller (not shown)). For example, the temperature of the heating elements can be set to a setpoint of approximately 1-25 degrees above the melting point of target material 718 (e.g., tin has a melting point of about 232 °C). An excess temperature greater than 25 degrees increases processing time without significant benefits, in some instances. Supplying only so much heat as necessary, the longevity of the heating elements can be maximized by reducing overstress of electrical components.

[0077] FIG. 8 depicts an example method 800 for refurbishing a material receptacle, consistent with embodiments of the present disclosure. The method can be executed using devices and functions described in reference to FIGS. 1-7.

[0078] In some embodiments, at operation 802, a material receptacle (e.g., catch system 400, material receptacles 516, 616, or 716 (FIGS. 4, 5A-5D, 6, and 7) is mounted on a mounting structure positioned on a support structure (e.g., mounting structure 506 or 606, support structures 502 or 602 (FIGS. 5A-5D and 6)).

[0079] At operation 804, the material receptacle is tilted to a first inclination angle. The material receptacle is tilted using a tilt mechanism (e.g., tilt mechanisms 504 or 604 (FIGS. 5A-5D and 6). The first inclination angle can be set to a predetermined angle in a range of about 60-80 degrees with respect to a horizontal direction (the horizontal direction being defined perpendicular to gravity) (e.g., see angle 0 in FIG. 5C).

[0080] At operation 806, the material receptacle is heated to melt target material inside the material receptacle (e.g., target material 518 or 718 (FIGS. 5A-5D and 7)). The heating can be performed using a heater disposed in contact with the material receptacle (e.g., heating device 404 (FIG. 4)). The temperature can be controlled by a controller (e.g., controller 738 (FIG. 7)). The temperature can be set to a setpoint that is 1-25 degrees above a melting point of the target material. The target material remains solid when the temperature is below the melting point. Once the temperature exceeds the melting point, it transitions into a liquid state and becomes flowable. In some embodiments, a sequence of operations 804 and 806 is reversed, with operation 806 preceding operation 804. That is, heating the target material receptacle is performed prior to tiling the material receptacle to the first inclination angle.

[0081] At operation 808, molten target material from the material receptacle can be directed towards a container disposed at the support frame (e.g., container 508, 608, or 708 (FIGS. 5A-5D, 6, and 7)). Operation 808 can be performed by rotating the material receptacle about an axis (e.g., axis 524 (FIGS. 5A-5D)) that is different from a rotational axis of the tilt mechanism.

[0082] Embodiments of method 800 can include additional operations based on the structures and functions described above in reference to FIGS. 1-7. For example, at another operation, a maintenance action can be performed, wherein the material receptacle is detached from a vessel of radiation source SO (FIG. 1) for transfer to the refurbishment apparatus.

[0083] In some embodiments, the receptacle of the radiation source and method thereof described in the present disclosure are used in a metrology apparatus in semiconductor manufacturing to measure and analyze critical dimensions on wafers with high precision. Such metrology apparatus detects defects, ensures pattern fidelity, analyzes chemical composition, and verifies process accuracy at nanoscale levels, playing a crucial role in maintain process control, improving yield, and ensuring quality of semiconductor devices throughout the manufacturing process.

[0084] After the refurbishment process is complete, it is desirable to test the refurbished material receptacles for proper function before being approved for return to operation. However, existing tools and methods for performing qualification testing are complex, costly, and time consuming. There are not many refurbishment providers available worldwide. And existing refurbishment providerstypically have large backlogs that exacerbates delays in refurbishment turnaround cycles (typically multiple weeks of delays). Existing qualification systems and methods fortesting refurbished material receptacles can include hundreds of test items. Hence, some embodiments of the present disclosure provide a simpler qualification apparatus that reduce the number of test items to a few tens or, in some cases, fewer than ten test items.

[0085] FIG. 9 depicts an example qualification system 900 for a material receptacle 902, consistent with embodiments of the present disclosure. In some embodiments, qualification system 900 comprises a support 904 and a support 906 configured to securely hold material receptacle 902 during qualification procedures. Qualification system 900 can also comprise a dummy connector 908 of a plasma-based radiation source. Dummy connector 908 can be designed to simulate connections and conditions that material receptacle 902 may experience during actual use in a plasma-based radiation source (e.g., when connected to source SO and in use during exposures performed by lithographic system 100 (FIG. 1)).

[0086] A flange 910 can provide an interface to a vacuum chamber in support 906. Flange 910 can be connected to dummy connector 908. Flange 910 can provide a fluidic (gas) connection to the interior of material receptacle 902 through dummy connector 908. Existing qualification systems are complex so as to accommodate the large number of test items of slower qualification testing methods. In contrast, flange 910 can be much simpler, consisting of just two access structures 920 and 922. Similarly, dummy connector 908 can have a simpler cylindrical construction and can consist of a single access port 918, thereby reducing manufacturing cost and complexity. The smaller gas volume inside dummy connector can be evacuated of gas in less time.

[0087] Support 904 can comprise a structure 912 shaped to securely support the material receptacle 902. The structure 912 may be a groove or other form -fitting feature that helps to stabilize the material receptacle 902 during qualification procedures, such as access structure 920 and an access structure 922. Access structure 920 can be a port for connecting a vacuum system. Access structure 922 can be a port for connecting a pressure gauge. Access structures can allow for various tests to be performed on the material receptacle 902, such as leak tests or pressure tests.

[0088] Qualification system 900 can also comprise a movable support 914. Movable support 914 can be used to transport material receptacle 902 into a loading and unloading position with respect to qualification system 900. Movable support 914 can be a cart or similar mobile platform.

[0089] In some embodiments, material receptacle 902 can comprise an access structure 916 that can be coupled to an access structure 918 of dummy connector 908. This coupling can allow for the simulation of connections and conditions that material receptacle 902 would experience in its intended operational environment (e.g., when connected to source SO (FIG. 1).

[0090] Qualification system 900 can be designed to execute a series of qualification tests on the material receptacle 902 after the material receptacle 902 has undergone refurbishment processes. Forexample, a vacuum pump can be coupled to a vacuum chamber of support 906 via access structure 920. The vacuum pump can be used to adjust the gas environment in the material receptacle 902.

[0091] By providing a comprehensive testing environment, qualification system 900 can ensure that refurbished material receptacles meet the necessary standards for reuse in sensitive applications, such as EUV lithography systems.

[0092] FIG. 10 depicts a functional diagram of an example qualification system 1000 fortesting a material receptacle 1002, consistent with embodiments of the present disclosure. In some embodiments, qualification system 1000 in FIG. 10 can represent the functions of qualification system 900 (FIG. 9). Hence, elements that correspond to one another across figures use a similar numbering scheme, with the left-most digit indicating the figure in which the element is first introduced and the two right-most digits being common for corresponding elements. The structures and functions of the elements of FIG. 10 are as described above with respect to their corresponding counterparts in FIG. 9, which can include qualification system 1000, material receptacle 1002 (e.g., catch system 400 (FIG. 4), a dummy connector 1008, an access structure 1014, and an access structure 1018, among other elements that may or may not be expressly shown.

[0093] In some embodiments, qualification system 1000 also comprises a vacuum chamber 1030. Material receptacle 1002 can also comprise an access structure 1014, a heating device 1026, and a cooling device 1028. Access structure 1014 of material receptacle 1002 can be coupled to access structure 1018 of dummy connector 1008. Vacuum chamber 1030 can be coupled to dummy connector 1008 and therefore have fluidic access to the material receptacle 1002 via the dummy connector 1008.

[0094] Qualification system 1000 can also comprise one or more tools coupled to the vacuum chamber 1030 for performing qualification tests. For example, a vacuum pump 1032 can be coupled to the vacuum chamber 1030 for evacuating gas from the material receptacle 1002. A leak test system 1034 can also be coupled to the vacuum chamber 1030 for checking whether the intended vacuum environments are properly sealed. A valve system 1036 can be used to control the flow of gases depending on the types of tests being performed on material receptacle 1002. Valve system 1036 can comprise multiple valves for directing gas flow between different components of the qualification system 1000.

[0095] A gas supply 1038 can be coupled to qualification system 1000 through a valve 1040. Gas supply 1038 can provide inert gas for purifying the environment within the material receptacle 1002. Using valve 1040 and valve system 1036, the gas environment inside the material receptacle 1002 can be purified to a desired level of purity.

[0096] In some embodiments, a coolant supply 1042 can provide a coolant (e.g., water) to cooling device 1028 of material receptacle 1002. Cooling device 1028 can comprise liquid conduits or channels along the walls of material receptacle 1002. Heating device 1026 and cooling device 1028 can be used for regulating temperature inside the material receptacle 1002.

[0097] A controller 1044 can be coupled to one or more electrical devices of material receptacle 1002, such as the heating device 1026. Controller 1044 can control the heating device 1026 to adjust a temperature of the heating device 1026, as well as receive feedback data from thermocouples.Controller 1044 can comprise suitable electrical / electronic hardware or measurement equipment for controlling testing components, sensing electrical signals, interpreting electrical measurement data, or the like.

[0098] Qualification system 1000 can be designed to perform a series of tests on the material receptacle 1002, including leak tests, temperature regulation tests, and electrical function tests. These tests can help ensure that refurbished material receptacles meet performance standards before being returned to operation.

[0099] FIG. 11 depicts a flowchart of an example method 1100 for qualifying a material receptacle, consistent with embodiments of the present disclosure. The method 1100 can comprise multiple test sequences with decision points determining the progression or termination of the qualification process. Method 1100 can be performed using qualification system 900, 1000 to perform tests on material receptacle 902, 1002 (FIGS. 9 and 10).

[0100] In some embodiments, when a given test finds an issue with a function of refurbished material receptacle (device under test (DUT)), the method can exit to operation 1102, which comprises repairing the material receptacle (e.g., specifically repairing or replacing the component that caused the fail result of a given test).

[0101] Upon start of method 1100, an operation 1104 can comprise performing a leak test (e.g., using helium, nitrogen, or forming gas). A successful leak test can be indicative that the material receptacle has a proper vacuum seal. To save time, at the time of the leak test, it is not necessary to have all test hookups coupled to the material receptacle (e.g., connections to heating device, thermocouples, cooling device, or the like). At decision 1106, if the test failed, time is saved by avoiding the additional work of uncoupling the unused hookups when the material receptacle is sent for repairs (operation 1102).

[0102] If decision 1106 is a pass, method 1100 can proceed to operation 1108, which comprises finalizing the setup of the qualification apparatus by coupling the remaining test components (e.g., coupling the electricals, gas supply, liquid supply, or the like).

[0103] Proceeding to the next operation, operation 1110 can comprise performing a room temperature test of the material receptacle. The room temperature test can comprise measuring a response of one or more thermocouples arranged throughout the material receptacle. As described previously, operation of the material receptacle in an EUV lithographic apparatus can involve maintaining an optimal temperature near the melting point of liquid tin (e.g., for optimal flow and minimal damage and wear of circuitry). The room temperature test of thermocouples can ascertain whether the thermocouples are functioning correctly. Correct function helps to provide accurate temperature readings when the material receptacle is in use. If the test fails at decision 1112, themethod can exit to operation 1102 (repairs). If the test passes, the method can proceed to operation 1114.

[0104] In some embodiments, operation 1114 can comprise an electrical test of the heating device of the material receptacle (e.g., heating device 404, 1026 (FIGS. 4 and 10)). The electrical test of the heating device is useful for ascertaining whether the heating device is fit to receive electrical power. The heating device can comprise wiring that generates heat as electrical current is passed through the wiring. For example, an electrical test can be to measure a resistance of the wiring. The wiring can be made to have tight specification or tolerances regarding resistance. A test result showing a nonconformance of the wiring resistance can be deemed a fail result. Non-conformance can be due to degradation of the wiring or other electrical element, which can lead to unpredictable heating performance when the material receptacle is operated with an EUV lithographic apparatus. If the test fails at decision 1116, the method can exit to operation 1102 (repairs). If the test passes, the method can proceed to operation 1118.

[0105] In some embodiments, operation 1118 can comprise a heater function test (e.g., a test for ascertaining the functional behavior of the heating device). With confidence that the heating device wiring is fit for receiving current (from the results of operation 1114) and that the thermocouples provide a correct temperature readout (from the results of operation 1110), electrical current can be passed through heating device 404, 1026 (FIGS. 4 and 10) while monitoring temperatures. If the test fails at decision 1120, the method can exit to operation 1102 (repairs). If the test passes, the method can proceed to operation 1122.

[0106] In some embodiments, operation 1122 can comprise a cooldown test. As described previously, actual use of the material receptacle can involve maintaining an optimal temperature near the melting point of liquid tin. Overtemperature can cause damage or accelerated wear of components of the material receptacle (e.g., degradation of circuitry). It can be convenient to perform operation 1122 following the heating resulting from operation 1118. The cooldown test can ascertain proper function of cooling device 1028 by monitoring how quickly the temperature of the material receptacle is reduced as coolant supply 1042 runs a coolant (e.g., water) through cooling device 1028 (FIG. 10). If the cooling test shows non-conforming behavior (e.g., cooling is slower than expected), it can be an indication that there might be blockage within the liquid channels of cooling device 1028 (FIG. 10) or some other kind of malfunction. If the test fails at decision 1124, the method can exit to operation 1102 (repairs). If the test passes, the method can end.

[0107] In some embodiments, one or more of the above-mentioned tests can be performed with the aid of a computing device (e.g., controller 1044 (FIG. 10)). The computing device can control one or more functions of qualification system 900 / 1000, for example, controlling an amount of current through heating device 404 / 1026, controlling a flow of coolant through cooling device 1028, controlling valves, controlling gas supplies, controlling measurement devices (e.g., leak test system 1034), receiving measurement data from measurement devices, or the like. The computing device canaggregate test results. Based on the test results, the computing device can generate a report that shows pass / fail statuses of one or more qualification tests (e.g., generating a report based on determining that the response threshold, resistance threshold, heating threshold, or cooling threshold were met or not met).

[0108] FIG. 12 illustrates a flowchart of a method 1200 for qualifying a material receptacle, consistent with embodiments of the present disclosure. In some embodiments, method 1200 can comprise a series of sequential operations for testing and evaluating the functionality of a refurbished material receptacle.

[0109] At operation 1202, a room temperature test of the material receptacle can be performed. The room temperature test can comprise determining whether a room temperature response of one or more thermocouples of a refurbished material receptacle is within a response threshold (measure a resistance of a thermistor of catch system 400 or material receptacle 516, 616, 716, 902, or 1002 (FIGS. 4-7, 9, and 10)). The threshold can be a value or a range of values of resistances that indicate that the one or more thermocouples are in working order. Controller 1044 (FIG. 10) can provide measurement readouts. The room temperature test can be performed to ascertain whether the thermocouples are functioning correctly and would provide accurate temperature readings when performing other tests or when the material receptacle is in use. In some embodiments, the room temperature test can be replaced with an alternative known temperature test that is different from room temperature (e.g., exposing the material receptacle to a heat source of known temperature).

[0110] At operation 1204, an electrical test of the heating device of the material receptacle can be performed. The electrical test can comprise determining whether a resistance of a heating device of the refurbished material receptacle is within a resistance threshold (e.g., measure a resistance of heating device 404, 1026 (FIGS. 4 and 10)). The threshold can be a value or range of values of resistances that indicate that the wiring of the heating device is in working order. Controller 1044 (FIG. 10) can provide measurement readouts. This test can be useful for ascertaining whether the heating device is fit to receive electrical power without taking damage. The wiring of the heating device can be designed to have specific tolerances regarding resistance, and a test result showing nonconformance can be deemed a fail result.[oni] In some embodiments, at operations 1206 and 1208, a heater function test can be performed. Operation 1206 of the heater function test can comprise applying a current to the heating device to heat the refurbished material receptacle. Operation 1208 of the heater function test can comprise determining whether a heat generated in response to the applied current is within a heating threshold. For example, the applied current can be adjusted to various values while the temperature readouts from the one or more thermocouples of the refurbished material receptacle are monitored. Heating rate as a function of applied current can be measured. Controller 1044 (FIG. 10) can provide measurement readouts. The threshold can be a value or a range of values of a rate of heating as a function of applied current that indicate that the heating device function is in working order. This testcan be performed to verify that the heating device can achieve and maintain the required temperatures for proper operation of the material receptacle.

[0112] In some embodiments, at operations 1210 and 1212, a cooldown test can be performed. Operation 1210 of the cooldown test can comprise cooling the refurbished material receptacle (e.g., using coolant supply 1042 to pass a coolant through cooling device 1028 of material receptacle 1002 (FIG. 10)). Operation 1212 of the cooldown test can comprise determining whether a cooldown rate of the refurbished material receptacle is within a cooling rate threshold. For example, the temperature readouts from the one or more thermocouples of the refurbished material receptacle can be monitored during the cooldown process. The threshold can be a value or a range of values of a rate of cooling as a function of time or flow rate that indicate that the cooling device is in working order. This test can be performed to help ensure that the material receptacle can effectively regulate its temperature during operation.

[0113] In some cases, the method can include additional steps not shown in FIG. 12, such as preparing the material receptacle for testing or analyzing the results of each test. The method illustrated in FIG. 12 can provide a systematic approach for qualifying refurbished material receptacles. By following this method, the qualification process can be performed in a controlled and efficient manner, helping to ensure that only properly functioning material receptacles are returned to service with faster turnaround times.

[0114] A non-transitory computer-readable medium may be provided that stores instructions for a processor of a controller (e.g., controller 738 or 1044 (FIGS. 7 and 10) for controlling temperature, actuators, valves, gas systems, cooling, or the like, used in connection with methods for refurbishing and qualifying a material receptacle, consistent with embodiments in the present disclosure. For example, the instructions stored in the non-transitory computer-readable medium can be executed by the circuitry of the controller for performing method one or more operations of methods, 800, 1100, or 1200 in part or in full. Common forms of non-transitory media include, for example, a floppy disk, a flexible disk, hard disk, solid-state drive, magnetic tape, or any other magnetic data storage medium, a Compact Disc Read-Only Memory (CD-ROM), any other optical data storage medium, any physical medium with patterns of holes, a Random Access Memory (RAM), a Programmable Read-Only Memory (PROM), and Erasable Programmable Read-Only Memory (EPROM), a FLASH-EPROM or any other flash memory, Non-Volatile Random Access Memory (NVRAM), a cache, a register, any other memory chip or cartridge, and networked versions of the same.

[0115] Some embodiments may further be described using the following clauses:1. An apparatus for refurbishing a material receptacle having process material stored therein, the apparatus comprising: a support frame; a tilt mechanism coupled to the support frame; a mounting structure coupled to the tilt mechanism, wherein:the tilt mechanism is configured to incline the mounting structure relative to the support frame; and the mounting structure is configured to support the material receptacle; a rotation mechanism configured to rotate the material receptacle about an axis different from a rotational axis of the tilt mechanism; and a container coupled to the support structure and configured to receive the process material from the material receptacle.2. The apparatus of clause 1, further comprising a heater coupled to the container and configured to liquify the received process material in the container.3. The apparatus of clause 2, further comprising a controller configured to control the heater to heat the received process material in the container to approximately 1-25 degrees centigrade above a melting point of the received process material in the container.4. The apparatus of any one of clauses 1 to 3, further comprising a gas supply configured to couple to the material receptacle.5. The apparatus of clause 4, wherein the gas supply is further configured to supply a buffer gas to mitigate chemical reaction of the process material with ambient environment.6. The apparatus of any one of clauses 1 to 5, wherein the tilt mechanism is further configured to hold an inclination angle of the mounting structure at a predetermined angle with respect to a horizontal plane that is perpendicular to a direction of gravity, wherein the predetermined angle is between about 60 degrees to 80 degrees.7. The apparatus of clause 6, wherein the tilt mechanism is further configured to adjust the inclination angle at a plurality of predetermined angles, the plurality of predetermined angles being based on a fill level of the material receptacle.8. The apparatus of any one of clauses 6 or 7, further comprising a telescopic support configured to support the mounting structure at the predetermined angle.9. The apparatus of any one of clauses 1 to 8, wherein: the material receptacle comprises a drain access structure; the container comprises a receiving access structure; and the rotation mechanism is further configured to rotate the material receptacle about the axis to reduce a distance between the drain access structure and the receiving access structure.10. The apparatus of clause 9, further comprising a valve configured to couple to the drain access structure and to open a flow of the process material out from the material receptacle.11. The apparatus of any one of clauses 1 to 10, wherein: the material receptacle is part of an assembly that comprises a heating element; and the apparatus is configured to allow refurbishing the material receptacle with the heating element attached to the material receptacle.12. The apparatus of clause 11, further comprising a controller configured to control the heating element to heat the material receptacle to approximately 1-25 degrees centigrade above a melting point of the process material.13. A method for refurbishing a material receptacle, the method comprising: mounting the material receptacle on a mounting mechanism positioned on a support structure; tilting the material receptacle to a first inclination angle; heating the target material receptacle to melt target material inside the material receptacle; and directing molten target material from the material receptacle towards a container disposed at the support structure.14. The method of clause 13, further comprising rotating the material receptacle to align a valve of the material receptacle with the container.15. The method of any one of clauses 13 or 14, wherein the first inclination angle is between about 60 degrees to 80 degrees.16. The method of any one of clauses 13 to 15, further comprising tilting the material receptacle to a second inclination angle that is smaller than the first inclination angle.17. The method of clause 16, wherein tilting the material receptacle to the second inclination angle is based on a fill level of the material receptacle.18. The method of any one of clauses 13 to 17, further comprising heating the container.19. The method of clause 18, wherein heating the container comprises heating the container to approximately 1-25 centigrade above a melting point of the target material.20. The method of any one of clauses 13 to 19, further comprising coupling a gas supply to the material receptacle.21. The method of clause 20, further comprising supplying a buffer gas to the material receptacle using the gas supply.22. The method of clause 21, further comprising mitigating chemical reaction of the target material with an ambient environment using the buffer gas.23. The method of any one of clauses 13 to 22, further supporting an inclination of the material receptacle using a telescopic support.24. The method of any one of clauses 13 to 23, wherein: the material receptacle is part of an assembly that comprises a heating element; and the method further comprises refurbishing the material receptacle with the heating element attached to the material receptacle.25. The method of clause 24, further comprising controlling the heating element to heat the material receptacle to approximately 1-25 degrees centigrade above a melting point of the target material.26. An apparatus for refurbishing a material receptacle having target material stored therein, the apparatus comprising: a tilt mechanism; a mounting structure coupled to the tilt mechanism, wherein: the tilt mechanism is configured to incline the mounting structure; and the mounting structure is configured to support the material receptacle; a container; a rotation mechanism disposed on the mounting structure and configured to rotate at least a portion of the mounting structure to reduce a distance between an access structure of the material receptacle and an access structure of the container.27. The apparatus of clause 26, further comprising a heater coupled to the container and configured to liquify target material received by the container.28. The apparatus of clause 27, further comprising a controller configured to control the heater to heat the target material received by the container to approximately 1-25 degrees centigrade above a melting point of the target material.29. The apparatus of any one of clauses 26 to 28, further comprising a gas supply configured to couple to the material receptacle.30. The apparatus of clause 29, wherein the gas supply is further configured to supply a buffer gas to mitigate chemical reaction of the target material with ambient environment.31. The apparatus of any one of clauses 26 to 30, wherein the tilt mechanism is further configured to hold an inclination angle of the mounting structure at a predetermined angle with respect to a horizontal plane that is perpendicular to a direction of gravity, wherein the predetermined angle is between about 60 degrees to 80 degrees.32. The apparatus of clause 31, wherein the tilt mechanism is further configured to adjust the inclination angle at a plurality of predetermined angles, the plurality of predetermined angles being based on a fill level of the material receptacle.33. The apparatus of any one of clauses 31 or 32, further comprising a telescopic support configured to support the mounting structure at the predetermined angle.34. The apparatus of any one of clauses 26 to 33, further comprising a valve configured to couple to the access structure of the material receptacle and to open a flow of the target material out from the material receptacle.35. The apparatus of any one of clauses 26 to 34, wherein: the material receptacle is part of an assembly that comprises a heating element; and the apparatus is configured to allow refurbishing the material receptacle with the heating element attached to the material receptacle.36. The apparatus of clause 35, further comprising a controller configured to control the heating element to heat the material receptacle to approximately 1-25 degrees centigrade above a melting point of the target material.37. The apparatus of any one of clauses 26 to 36, wherein the apparatus is configured to receive the material receptacle from a vessel of a radiation source.38. A qualification system for a material receptacle, comprising: a support structure configured to securely support the material receptacle; a dummy connector configured to couple with an access structure of the material receptacle; and a flange comprising an access structure, wherein the flange is configured to couple to the dummy connector and to provide a fluidic connection to an interior of the material receptacle via the dummy connector and the access structure of the flange.39. The qualification system of clause 38, wherein fluidic access through the flange consists of the access structure and a second structure of the flange.40. The qualification system of clause 39, further comprising a pressure gauge coupled to the second access structure of the flange.41. The qualification system of any one of clauses 38 to 40, wherein the support structure comprises a groove shape to securely support the material receptacle.42. The qualification system of any one of clauses 38 to 41, further comprising a movable support configured to move the material receptacle into a loading and unloading position with respect to the qualification system.43. The qualification system of any one of clauses 38 to 42, wherein the dummy connector is configured to simulate a connector of a plasma-based radiation source.44. The qualification system of any one of clauses 38 to 43, further comprising a vacuum pump coupled to the access structure of the flange.45. The qualification system of any one of clauses 38 to 44, wherein the qualification system is configured to execute a series of qualification tests on the material receptacle after the material receptacle has been refurbished.46. The qualification system of any one of clauses 38 to 45, further comprising a controller configured to couple to the material receptacle.47. The qualification system of clause 46, wherein the controller is further configured to adjust a temperature of a heating device of the material receptacle.48. The qualification system of any one of clauses 46 or 47, wherein the controller is further configured to receive temperature data from a temperature sensor of the material receptacle.49. The qualification system of any one of clauses 38 to 48, further comprising a coolant supply configured to provide a coolant to a cooling device of the material receptacle.50. The qualification system of any one of clauses 38 to 49, further comprising an gas supply configured to provide an inert gas to the material receptacle.51. A method for qualifying a material receptacle, comprising: determining whether a room temperature response of a thermocouple of the material receptacle is within a response threshold; determining whether a resistance of a heating device of the material receptacle is within a resistance threshold; applying a current to the heating device to heat the material receptacle; determining whether heat generated in response to the applied current is within a heating threshold; cooling the material receptacle; and determining whether a cooldown rate of the material receptacle is within a cooling rate threshold.52. The method of clause 51, further comprising repairing the material receptacle based on determining that the response threshold, resistance threshold, heating threshold, or cooling threshold were not met.53. The method of any one of clauses 51 or 52, further comprising: supplying helium gas to the material receptacle; and determining whether a gas leak from the material receptacle is within a gas leak threshold.54. The method of clause 53, further comprising coupling a controller to the heating device and the thermocouple based on determining that the gas leak threshold was met.55. The method of any one of clauses 51 to 54, further comprising generating a report based on determining that the response threshold, resistance threshold, heating threshold, or cooling threshold were met or not met.56. A non-transitory computer-readable medium that stores a set of instructions that is executable by at least one processor of an apparatus to cause the apparatus to perform operations for qualifying a material receptacle, the operations comprising: determining whether a room temperature response of a thermocouple of the material receptacle is within a response threshold; determining whether a resistance of a heating device of the material receptacle is within a resistance threshold; based on a current applied to the heating device to heat the material receptacle, determining whether heat generated in response to the applied current is within a heating threshold; and based on cooling the material receptacle, determining whether a cooldown rate of the material receptacle is within a cooling rate threshold.57. The non-transitory computer-readable medium of clause 56, wherein the operations further comprise determining whether a gas leak from the material receptacle is within a gas leak threshold.58. The non-transitory computer-readable medium of any one of clauses 56 or 57, wherein the operations further comprise generating a report based on determining that the response threshold, resistance threshold, heating threshold, or cooling threshold were met or not met.59. The non-transitory computer-readable medium of any one of clauses 56 to 58, wherein: determining whether the room temperature response of the thermocouple of the material receptacle is within the response threshold comprises receiving resistance data from the thermocouple; and the received resistance data is based on determining that the response threshold was met.60. The non-transitory computer-readable medium of any one of clauses 56 to 59, wherein: determining whether the heat generated in response to the applied current is within the heating threshold comprises receiving resistance data from the thermocouple; and the received resistance data is based on determining that the response threshold was met.61. The non-transitory computer-readable medium of any one of clauses 56 to 60, wherein: determining whether the cooldown rate of the material receptacle is within the cooling rate threshold comprises receiving resistance data from the thermocouple; and the received resistance data is based on determining that the response threshold was met.

[0116] It will be appreciated that the embodiments of the present disclosure are not limited to the exact construction that has been described above and illustrated in the accompanying drawings and that various modifications and changes may be made without departing from the scope thereof.

Claims

CLAIMS1. An apparatus for refurbishing a material receptacle having process material stored therein, the apparatus comprising: a support frame; a tilt mechanism coupled to the support frame; a mounting structure coupled to the tilt mechanism, wherein: the tilt mechanism is configured to incline the mounting structure relative to the support frame; and the mounting structure is configured to support the material receptacle; a rotation mechanism configured to rotate the material receptacle about an axis different from a rotational axis of the tilt mechanism; and a container coupled to the support frame and configured to receive the process material from the material receptacle.

2. The apparatus of claim 1, further comprising a heater coupled to the container and configured to liquify the received process material in the container.

3. The apparatus of claim 1, further comprising a gas supply coupled to the material receptacle.

4. The apparatus of claim 1, wherein the tilt mechanism is further configured to hold an inclination angle of the mounting structure at a predetermined angle with respect to a horizontal plane that is perpendicular to a direction of gravity, wherein the predetermined angle is between about 60 degrees to 80 degrees.

5. The apparatus of claim 4, further comprising a telescopic support configured to support the mounting structure at the predetermined angle.

6. The apparatus of claim 1, wherein: the material receptacle comprises a drain access structure; the container comprises a receiving access structure; and the rotation mechanism is further configured to rotate the material receptacle about the axis to reduce a distance between the drain access structure and the receiving access structure.

7. The apparatus of claim 6, further comprising a valve configured to couple to the drain access structure and to open a flow of the process material out from the material receptacle.

8. The apparatus of claim 1, wherein: the material receptacle is part of an assembly that comprises a heating element; and the apparatus is configured to allow refurbishing the material receptacle with the heating element attached to the material receptacle.

9. A method for refurbishing a material receptacle, the method comprising: mounting the material receptacle on a mounting mechanism positioned on a support structure; tilting the material receptacle to a first inclination angle; heating the material receptacle to melt target material inside the material receptacle; and directing molten target material from the material receptacle towards a container disposed at the support structure.

10. The method of claim 9, further comprising rotating the material receptacle to align a valve of the material receptacle with the container.

11. The method of claim 9, further comprising tilting the material receptacle to a second inclination angle that is smaller than the first inclination angle.

12. The method of claim 11, wherein tilting the material receptacle to the second inclination angle is based on a fill level of the material receptacle.

13. The method of claim 9, further comprising heating the container.

14. The method of claim 9, further comprising coupling a gas supply to the material receptacle, and supplying a buffer gas to the material receptacle using the gas supply.

15. The method of claim 14, further comprising mitigating chemical reaction of the target material with an ambient environment using the buffer gas.

16. A qualification system for a material receptacle, comprising: a support structure configured to securely support the material receptacle; a dummy connector configured to couple with an access structure of the material receptacle; and a flange comprising an access structure, wherein the flange is configured to couple to the dummy connector and to provide a fluidic connection to an interior of the material receptacle via the dummy connector and the access structure of the flange.

17. The qualification system of claim 16, wherein fluidic access through the flange consists of the access structure of the flange and a second structure of the flange.

18. The qualification system of claim 17, further comprising a pressure gauge coupled to the second access structure of the flange.

19. The qualification system of claim 16, wherein the support structure comprises a groove shape to securely support the material receptacle.

20. The qualification system of claim 16, further comprising a movable support configured to move the material receptacle into a loading and unloading position with respect to the qualification system.21 The qualification system of claim 16, wherein the dummy connector is configured to simulate a connector of a plasma-based radiation source.

22. The qualification system of claim 16, further comprising a vacuum pump coupled to the access structure of the flange.

23. The qualification system of claim 16, further comprising a controller configured to couple to the material receptacle.

24. The qualification system of claim 23, wherein the controller is further configured to adjust a temperature of a heating device of the material receptacle.

25. The qualification system of claim 23, wherein the controller is further configured to receive temperature data from a temperature sensor of the material receptacle.

26. The qualification system of claim 16, further comprising a coolant supply configured to provide a coolant to a cooling device of the material receptacle.

27. A method for qualifying a material receptacle, comprising: determining whether a room temperature response of a thermocouple of the material receptacle is within a response threshold; determining whether a resistance of a heating device of the material receptacle is within a resistance threshold; applying a current to the heating device to heat the material receptacle;determining whether heat generated in response to the applied current is within a heating threshold; cooling the material receptacle; determining whether a cooldown rate of the material receptacle is within a cooling rate threshold; and generating a report based on determining that the response threshold, resistance threshold, heating threshold, or cooling threshold were met or not met.

28. The method of claim 27, further comprising repairing the material receptacle based on determining that the response threshold, resistance threshold, heating threshold, or cooling threshold were not met.

29. The method of claim 27, further comprising: supplying helium gas to the material receptacle; and determining whether a gas leak from the material receptacle is within a gas leak threshold.

30. The method of claim 29, further comprising coupling a controller to the heating device and the thermocouple based on determining that the gas leak threshold was met.

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