Film capacitor and metallized film for film capacitor

Abstract

The present disclosure addresses the problem of providing a film capacitor with which it is possible to improve voltage resistance and heat resistance. This film capacitor 100 comprises a capacitor body 1 in which two films 3 are stacked and wound or alternatingly stacked. The film 3 includes at least one component selected from the group consisting of a dielectric film 4, a metal oxide layer 6, and a metal layer 7.

Description

Film capacitors and metallized films for film capacitors

[0001] This disclosure relates in general to film capacitors and metallized films for film capacitors, and more particularly to film capacitors and metallized films for film capacitors that utilize a film as a dielectric.

[0002] Patent Document 1 discloses a metallized film capacitor. This metallized film capacitor consists of a pair of metallized films, each having a metal vapor-deposited electrode formed on a dielectric film, and an element formed by winding or laminating these metallized films so that the respective metal vapor-deposited electrodes on the pair of metallized films face each other through the dielectric film, and a pair of metallicon electrodes formed on both end faces of this element. At least one of the metal vapor-deposited electrodes of the pair of metallized films is mainly composed of aluminum and has an oxide film layer formed at the junction with the dielectric film and a magnesium-containing layer formed on this oxide film layer, with the atomic concentration ratio of magnesium being highest in the magnesium-containing layer.

[0003] However, there is a need to improve the voltage resistance and heat resistance of film capacitors as described above.

[0004] Japanese Patent Publication No. 2013-65747

[0005] The object of this disclosure is to provide a film capacitor and a metallized film for film capacitors that can achieve improved voltage resistance and heat resistance.

[0006] A film capacitor according to one aspect of the present disclosure comprises a capacitor body formed by winding together a first metallized film and a second metallized film, or by alternately stacking the first metallized film and the second metallized film. The first metallized film includes a first dielectric film, a first metal oxide layer, and a first metal layer. The first dielectric film has a first upper surface and a first lower surface opposite to the first upper surface. The first metal oxide layer and the first metal layer are arranged on the first upper surface in order from the first upper surface. The second metallized film includes a second dielectric film, a second metal oxide layer, and a second metal layer. The second dielectric film has a second upper surface and a second lower surface opposite to the second upper surface. The second metal layer is arranged on the second upper surface. The second metal oxide layer is arranged on the second lower surface. The first metallized film and the second metallized film are superimposed so that the first upper surface and the second lower surface face each other.

[0007] A film capacitor according to one aspect of the present disclosure comprises a capacitor body formed by winding together a first metallized film and a second metallized film, or by alternately stacking the first metallized film and the second metallized film. The first metallized film includes a first dielectric film, a first metal oxide layer, a first metal layer, and a second metal oxide layer. The first dielectric film has a first upper surface and a first lower surface opposite to the first upper surface. On the first upper surface, a first metal oxide layer, a first metal layer, and a second metal oxide layer are arranged in order from the first upper surface. The second metallized film includes a second dielectric film and a second metal layer. The second dielectric film has a second upper surface and a second lower surface opposite to the second upper surface. The second metal layer is arranged on the second upper surface. The first metallized film and the second metallized film are stacked so that the first upper surface side and the second lower surface side face each other.

[0008] A film capacitor according to one aspect of the present disclosure comprises a capacitor body formed by winding a metallized film and an insulating film in superposition, or by alternately laminating a metallized film and an insulating film. The metallized film includes a first dielectric film, a first metal oxide layer, a first metal layer, and a second metal layer. The first dielectric film has a first upper surface and a first lower surface opposite to the first upper surface. The first metal oxide layer and the first metal layer are arranged on the first upper surface in order from the first upper surface. The second metal layer is arranged on the first lower surface. The insulating film includes a second dielectric film and a second metal oxide layer. The second dielectric film has a second upper surface and a second lower surface opposite to the second upper surface. The second metal oxide layer is arranged on the second lower surface. The metallized film and the insulating film are superimposed such that the first upper surface side and the second lower surface side face each other.

[0009] A film capacitor according to one aspect of the present disclosure comprises a capacitor body formed by winding a metallized film and an insulating film in superposition, or by alternately laminating a metallized film and an insulating film. The metallized film includes a first dielectric film, a first metal oxide layer, a first metal layer, a second metal oxide layer, and a second metal layer. The first dielectric film has a first upper surface and a first lower surface opposite to the first upper surface. On the first upper surface, the first metal oxide layer, the first metal layer, and the second metal oxide layer are arranged in order from the first upper surface. The second metal layer is arranged on the first lower surface. The insulating film includes a second dielectric film. The second dielectric film has a second upper surface and a second lower surface opposite to the second upper surface. The metallized film and the insulating film are superimposed such that the first upper surface side and the second lower surface side face each other.

[0010] A metallized film for a film capacitor according to one aspect of the present disclosure includes a dielectric film, a metal oxide layer, and a metal layer. The dielectric film has an upper surface and a lower surface opposite to the upper surface. The metal layer is disposed on the upper surface. The metal oxide layer is disposed on the lower surface.

[0011] A metallized film for a film capacitor according to one aspect of the present disclosure includes a dielectric film, two metal oxide layers, and a metal layer. The dielectric film has an upper surface and a lower surface opposite to the upper surface. On the upper surface, one of the metal oxide layers, the metal layer, and the other metal oxide layer are arranged in order from the upper surface.

[0012] A metallized film for a film capacitor according to one aspect of the present disclosure includes a dielectric film, a metal oxide layer, and two metal layers. The dielectric film has an upper surface and a lower surface opposite to the upper surface. The metal oxide layer and one of the metal layers are arranged on the upper surface in order from the upper surface. The other metal layer is arranged on the lower surface.

[0013] A metallized film for a film capacitor according to one aspect of the present disclosure includes a dielectric film, two metal oxide layers, and two metal layers. The dielectric film has an upper surface and a lower surface opposite to the upper surface. On the upper surface, one of the metal oxide layers, one of the metal layers, and the other metal oxide layer are arranged in order from the upper surface. On the lower surface, the other metal layer is arranged.

[0014] Figure 1 is a schematic cross-sectional view showing a film capacitor according to the first embodiment of this disclosure. Figure 2 is a schematic cross-sectional view showing a film capacitor according to the second embodiment of this disclosure. Figure 3 is a schematic cross-sectional view showing a film capacitor according to the third embodiment of this disclosure. Figure 4 is a schematic cross-sectional view showing a film capacitor according to the fourth embodiment of this disclosure.

[0015] 1. Overview The film capacitor 100 according to the embodiment will be described with reference to the figures. Note that each figure is a schematic diagram, and the ratios of the size and thickness of each component in the figures do not necessarily reflect the actual dimensional ratios. Also, the arrows indicating each direction in each figure are not intended to define the direction in which the film capacitor 100 is used, but are merely indicated to make the explanation easier to understand and do not represent actual dimensions. The first direction D1, the second direction D2, and the third direction D3 are perpendicular to each other. The first direction D1 is the short-side direction (width direction) of the dielectric film 4 and is sometimes called the "left-right direction". The third direction D3 is the thickness direction of the dielectric film 4 and is sometimes called the "up-down direction". Although not shown in the figures, the direction perpendicular to the first direction D1 and the third direction D3 is called the second direction D2. The second direction D2 is the long-side direction of the dielectric film 4.

[0016] The film capacitor 100 according to this embodiment comprises a capacitor body 1 formed by stacking two films 3. The capacitor body 1 may be of the wound type or the laminated type. That is, it may be formed by stacking and winding two films 3 together or by alternately laminating them. The film 3 may include at least one component selected from the group consisting of a dielectric film 4, a metal oxide layer 6, and a metal layer 7.

[0017] In this embodiment, a metal oxide layer 6 is interposed between a metal layer 7 electrically connected to the negative electrode and a metal layer 7 electrically connected to the positive electrode. The metal oxide layer 6 contains a metal oxide and has a high energy barrier. Therefore, it can suppress the movement of electrons emitted from the metal layer 7 electrically connected to the negative electrode toward the metal layer 7 electrically connected to the positive electrode. This improves the voltage withstand capability of the film capacitor 100. Furthermore, the film capacitor 100 according to this embodiment is less prone to leakage current, thus improving the heat resistance of the film capacitor 100. Note that the heat resistance of the film capacitor 100 means that the reduction in the voltage withstand capability of the film capacitor 100 is less likely to occur by suppressing self-heating caused by leakage current.

[0018] 2. Details (1) First Embodiment (1.1) Film Capacitor A film capacitor 100 according to the first embodiment will be described. Figure 1 is an explanatory diagram showing the film capacitor 100 according to the first embodiment. In order to make the following explanation easier to understand, Figure 1 shows the two metallized films 31 (first metallized film 311 and second metallized film 312) separated. That is, the first metallized film 311 and the second metallized film 312 are in direct contact.

[0019] The capacitor body 1 includes a first metallized film 311 and a second metallized film 312. For example, in the case of a wound-type film capacitor 100, the capacitor body 1 is formed by winding the first metallized film 311 and the second metallized film 312 together. In the case of a multilayer film capacitor 100, the capacitor body 1 is formed by alternately stacking the first metallized film 311 and the second metallized film 312.

[0020] The first metallized film 311 has a constant width in the first direction D1, extends in the second direction D2, and has thickness in the third direction D3. For example, the width of the first metallized film 311 is 5 mm or more and 200 mm or less, and the thickness of the first metallized film 311 is 1 μm or more and 10 μm or less.

[0021] The first metallized film 311 includes a first dielectric film 41, a first metal oxide layer 61, and a first metal layer 71.

[0022] The first dielectric film 41 has a constant width in the first direction D1, extends in the second direction D2, and has a constant thickness in the third direction D3.

[0023] The first dielectric film 41 has a first upper surface 811 and a first lower surface 821. The first upper surface 811 is the upper surface in the third direction D3. The first lower surface 821 is the surface opposite to the first upper surface 811. In other words, the first lower surface 821 is the lower surface in the third direction D3.

[0024] The thickness of the first dielectric film 41 is the distance between the first upper surface 811 and the first lower surface 821, and is not particularly limited, but for example, it is 1.0 μm or more and 10.0 μm or less. In this case, it is easier to improve the withstand voltage of the film capacitor 100.

[0025] The first dielectric film 41 is a film composed of a dielectric material. The dielectric material includes, for example, at least one material selected from the group consisting of polypropylene (PP), polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyphenylene sulfide (PPS), polycarbonate (PC), and polystyrene (PS). Among these, polypropylene (PP) or polyethylene terephthalate (PET) is preferred. In other words, it is preferable that the first dielectric film 41 includes at least one material selected from the group consisting of polypropylene (PP) and polyethylene terephthalate (PET). In this case, the dielectric breakdown voltage of the first dielectric film 41 is increased. This further improves the dielectric strength of the film capacitor 100.

[0026] The first metal oxide layer 61 includes an oxide of at least one metal selected from the group consisting of, for example, aluminum (Al), silicon (Si), zirconium (Zr), titanium (Ti), barium (Ba), calcium (Ca), and copper (Cu). Among these, aluminum oxide (AlO ｘ ) or silicon oxide (SiO ｘ ) is preferably used. Among aluminum oxides, Al ２ O ３ The following is preferably used. That is, the first metal oxide layer 61 is Al ２ O ３ It is more preferable to include this. In this case, improvements in voltage resistance and heat resistance are more easily achieved.

[0027] The thickness of the first metal oxide layer 61 is not particularly limited, but for example, it is 3 nm or more and 30 nm or less. If the thickness is 3 nm or more, the tunnel current generated in the film capacitor 100 can be suppressed. If the thickness is 30 nm or less, the electron avalanche generated in the film capacitor 100 can be suppressed.

[0028] The first metal layer 71 contains at least one selected from the group consisting of, for example, aluminum (Al), gold (Au), magnesium (Mg), zinc (Zn), tin (Sn), nickel (Ni), chromium (Cr), iron (Fe), copper (Cu), titanium (Ti), and the like. Among these, aluminum (Al) is preferably used. That is, the first metal layer 71 preferably contains Al. In this case, it is easy to achieve an improvement in withstand voltage and heat resistance.

[0029] The thickness of the first metal layer 71 is not particularly limited, but is, for example, 3 nm or more and 100 nm or less.

[0030] On the first upper surface 811, the first metal oxide layer 61 and the first metal layer 71 are arranged in order from the closest to the first upper surface 811. The first metal oxide layer 61 is in direct contact with the first upper surface 811. The first metal layer 71 is in direct contact with the first metal oxide layer 61. Note that the first metal layer 71 may be arranged so as to cover the entire first metal oxide layer 61, or may be arranged so as to cover a part of the first metal oxide layer 61. For example, the first metal layer 71 may partially cover the first metal oxide layer 61 by being divided into a plurality of regions.

[0031] The second metallization film 312 has a constant width in the first direction D1, extends in the second direction D2, and has a thickness in the third direction D3. The width and thickness of the second metallization film 312 may be the same as those of the first metallization film 311, or may be different. In the first embodiment, they are substantially equal to the width and thickness of the first metallization film 311.

[0032] The second metallization film 312 includes a second dielectric film 42, a second metal oxide layer 62, and a second metal layer 72.

[0033] The second dielectric film 42 has a constant width in the first direction D1, extends in the second direction D2, and has a constant thickness in the third direction D3.

[0034] The second dielectric film 42 has a second upper surface 812 and a second lower surface 822. The second upper surface 812 is the upper surface in the third direction D3. The second lower surface 822 is the surface on the opposite side of the second upper surface 812. That is, the second lower surface 822 is the lower surface in the third direction D3.

[0035] Also, the thickness of the second dielectric film 42 is the distance between the second upper surface 812 and the second lower surface 822, and may be the same as or different from that of the first dielectric film 41. In the first embodiment, it is substantially equal to the width and thickness of the first metallization film 311.

[0036] The second dielectric film 42 can be formed using the materials listed as the dielectrics constituting the first dielectric film 41. Note that the dielectric constituting the first dielectric film 41 and the dielectric constituting the second dielectric film 42 may be the same or different. From the viewpoint of improving the withstand voltage of the film capacitor 100, it is preferable that the breakdown voltage of the second dielectric film 42 is also increased. Therefore, the second dielectric film 42 preferably contains at least one selected from the group consisting of polypropylene (PP) and polyethylene terephthalate (PET).

[0037] A second metal layer 72 is disposed on the second upper surface 812. The second metal layer 72 can contain the metals that the first metal layer 71 can contain. Similar to the first metal layer 71, the second metal layer 72 preferably contains Al. In this case, it is easy to realize an improvement in withstand voltage and heat resistance.

[0038] A second metal oxide layer 62 is disposed on the second lower surface 822. The second metal oxide layer 62 can contain the metal oxides that the first metal oxide layer 61 can contain. Similar to the first metal oxide layer 61, the second metal oxide layer 62 ２ O ３ preferably contains. In this case, it is easy to realize an improvement in withstand voltage and heat resistance.

[0039] The first metallized film 311 and the second metallized film 312 are stacked so that their first upper surface 811 side and second lower surface 822 side face each other. As already mentioned, the first metallized film 311 and the second metallized film 312 are in direct contact. Therefore, in the first embodiment, the first metal layer 71 contained in the first metallized film 311 and the second metal oxide layer 62 contained in the second metallized film 312 are in direct contact. Furthermore, the first lower surface 821 of the first dielectric film 41 contained in the first metallized film 311 and the second metal layer 72 contained in the second metallized film 312 are in direct contact.

[0040] In the first embodiment, the capacitor body 1 includes a first end-face electrode 21 positioned on one end face and a second end-face electrode 22 positioned on the other end face. The first end-face electrode 21 is positioned on the right side of the film capacitor 100. The second end-face electrode 22 is positioned on the left side of the film capacitor 100.

[0041] The first metal layer 71 is connected to the first end electrode 21. On the other hand, the second metal layer 72 is not connected to the first end electrode 21. The material of the first end electrode 21 is not particularly limited, but examples include zinc (Zn), tin (Sn), or alloys thereof. The thickness of the first end electrode 21 is not particularly limited, but for example, it is 0.5 mm or more and 1.5 mm or less.

[0042] The second metal layer 72 is connected to the second end electrode 22. On the other hand, the first metal layer 71 is not connected to the second end electrode 22. The material and thickness of the second end electrode 22 may be the same as or different from that of the first end electrode 21, but in the first embodiment, they are the same as those of the first end electrode 21.

[0043] Furthermore, the thickness of the first metal layer 71 near the connection point with the first end electrode 21 may be greater than the thickness of the first metal layer 71 in areas other than the connection point with the first end electrode 21. The thickness of the second metal layer 72 near the connection point with the second end electrode 22 may be greater than the thickness of the second metal layer 72 in areas other than the connection point with the second end electrode 22.

[0044] Furthermore, in the first embodiment, the first end electrode 21 is connected to the negative electrode of the power supply, and the second end electrode 22 is connected to the positive electrode of the power supply. In other words, the first end electrode 21 is the negative electrode, and the second end electrode 22 is the positive electrode. In this case, improvements in voltage resistance and heat resistance are more easily achieved.

[0045] (1.2) Effects In the first embodiment, the film capacitor 100 can be charged by applying a voltage between the first end electrode 21 and the second end electrode 22. After charging, the film capacitor 100 can be discharged through the first end electrode 21 and the second end electrode 22. When using the film capacitor 100, thermal decomposition or dielectric breakdown of the dielectric film 4 may occur due to the movement of electrons from the first metal layer 71, which is electrically connected to the negative electrode, to the second metal layer 72, which is electrically connected to the positive electrode. However, in the first embodiment, a first metal oxide layer 61 or a second metal oxide layer 62 is interposed between the first metal layer 71 and the second metal layer 72. Therefore, the movement of electrons emitted from the first metal layer 71 toward the second metal layer 72 can be suppressed. This improves the voltage resistance and heat resistance of the film capacitor 100. As a result, thermal decomposition or dielectric breakdown of the first dielectric film 41 or the second dielectric film 42 can be suppressed.

[0046] Furthermore, in the first embodiment, each metallized film 31 includes one metal oxide layer 6 and one metal layer 7. For example, the metal oxide layer 6 or the metal layer 7 can be formed by depositing metal or metal oxide onto the dielectric film 4, but in the first embodiment, the metallized film 31 can be manufactured by performing the metal deposition and metal oxide deposition only once each. Therefore, the thermal influence on the dielectric film 4 during the manufacture of the metallized film 31 can be reduced. This has the advantage of making it easier to improve the dielectric strength and heat resistance.

[0047] Furthermore, in the first embodiment, the metallized film 31 is not manufactured by forming three or more layers of metal oxide layer 6 and metal layer 7 together. Therefore, the first embodiment has the advantage of being easier to manufacture the metallized film 31 compared to the second to fourth embodiments described later.

[0048] (2) Second Embodiment (2.1) Film Capacitor The film capacitor 100 according to the second embodiment will be described with reference to Figure 2. Figure 2 shows the two metallized films 31 (first metallized film 311 and second metallized film 312) separated in order to make the following explanation easier to understand. That is, the first metallized film 311 and the second metallized film 312 are in direct contact. In the second embodiment, components similar to those in the first embodiment are given the same reference numerals as in the first embodiment, and detailed explanations may be omitted.

[0049] Similar to the first embodiment, the film capacitor 100 according to the second embodiment comprises a capacitor body 1 formed by winding together a first metallized film 311 and a second metallized film 312, or by alternately stacking the first metallized film 311 and the second metallized film 312. However, the second embodiment differs from the first embodiment in that the second metal oxide layer 62 is included in the first metallized film 311, rather than in the second metallized film 312.

[0050] Similar to the first embodiment, the first metallized film 311 has a constant width in the first direction D1, extends in the second direction D2, and has a constant thickness in the third direction D3. The width and thickness of the first metallized film 311 may be the same as or different from the width and thickness of the first metallized film 311 in the first embodiment.

[0051] The first metallized film 311 includes a first dielectric film 41, a first metal oxide layer 61, a first metal layer 71, and a second metal oxide layer 62.

[0052] The first dielectric film 41 has a constant width in the first direction D1, extends in the second direction D2, and has thickness in the third direction D3.

[0053] The first dielectric film 41 has a first upper surface 811 and a first lower surface 821 opposite to the first upper surface 811.

[0054] The width and thickness of the first dielectric film 41 may be the same as, or different from, the width and thickness of, the first dielectric film 41 according to the first embodiment.

[0055] The first dielectric film 41 can be formed using the materials listed as the dielectrics constituting the first dielectric film 41 according to the first embodiment.

[0056] The first metal oxide layer 61 can contain the metal oxides that the first metal oxide layer 61 according to the first embodiment may contain. Similar to the first embodiment, the first metal oxide layer 61 preferably contains Al ２ O ３ . In this case, it is easier to achieve improvements in withstand voltage and heat resistance. The thickness of the first metal oxide layer 61 may be the same as or different from the thickness of the first metal oxide layer 61 according to the first embodiment.

[0057] The first metal layer 71 can contain the metals that the first metal layer 71 according to the first embodiment may contain. Similar to the first embodiment, the first metal layer 71 preferably contains Al. In this case, it is easier to achieve improvements in withstand voltage and heat resistance. The thickness of the first metal layer 71 may be the same as or different from the thickness of the first metal layer 71 according to the first embodiment.

[0058] The second metal oxide layer 62 can contain the metal oxides that the second metal oxide layer 62 according to the first embodiment may contain. Similar to the first embodiment, the second metal oxide layer 62 preferably contains Al ２ O ３ . In this case, it is easier to achieve improvements in withstand voltage and heat resistance. The thickness of the second metal oxide layer 62 may be the same as or different from the thickness of the second metal oxide layer 62 according to the first embodiment.

[0059] On the first upper surface 811, the first metal oxide layer 61, the first metal layer 71, and the second metal oxide layer 62 are arranged in this order from the closest to the first upper surface 811. The first metal oxide layer 61 is in direct contact with the first upper surface 811. The first metal layer 71 is in direct contact with the first metal oxide layer 61. The second metal oxide layer 62 is in direct contact with the first metal layer 71.

[0060] Thus, when the first metal layer 71 is positioned between the first metal oxide layer 61 and the second metal oxide layer 62 so as to be in direct contact with the first metal oxide layer 61 and the second metal oxide layer 62, oxidation of the first metal layer 71 becomes less likely. This improves the moisture resistance of the film capacitor 100. Moisture resistance refers to the fact that the film capacitor 100 is less likely to absorb moisture, thereby maintaining the dielectric strength of the film capacitor 100.

[0061] The second metallized film 312 has a constant width in the first direction D1, extends in the second direction D2, and has thickness in the third direction D3. The width and thickness of the second metallized film 312 may be the same as or different from the second metallized film 312 in the first embodiment.

[0062] The second metallized film 312 includes the second dielectric film 42 and the second metal layer 72. In other words, in the second embodiment, the second metallized film 312 does not include the metal oxide layer 6.

[0063] The second dielectric film 42 has a constant width in the first direction D1, extends in the second direction D2, and has thickness in the third direction D3. The width and thickness of the second dielectric film 42 may be the same as or different from the width and thickness of the second dielectric film 42 according to the first embodiment.

[0064] The second dielectric film 42 has a second upper surface 812 and a second lower surface 822 on the opposite side of the second upper surface 812.

[0065] The second dielectric film 42 can be constructed using the materials listed as dielectrics constituting the first dielectric film 41. The dielectrics constituting the first dielectric film 41 and the dielectrics constituting the second dielectric film 42 may be the same or different.

[0066] The second metal layer 72 may contain the metal included in the second metal layer 72 according to the first embodiment. Similar to the first embodiment, it is preferable that the second metal layer 72 contains Al. In this case, improvements in dielectric strength and heat resistance are more easily achieved. The thickness of the second metal layer 72 may be the same as or different from the thickness of the second metal layer 72 according to the first embodiment.

[0067] A second metal layer 72 is placed on the second upper surface 812. The second metal layer 72 is in direct contact with the second upper surface 812.

[0068] Similar to the first embodiment, the first metallized film 311 and the second metallized film 312 are stacked so that the first upper surface 811 side and the second lower surface 822 side face each other. As already mentioned, the first metallized film 311 and the second metallized film 312 are in direct contact. Therefore, in the second embodiment, the second metal oxide layer 62 contained in the first metallized film 311 and the second lower surface 822 of the second dielectric film 42 contained in the second metallized film 312 are in direct contact. Furthermore, the first lower surface 821 of the first dielectric film 41 contained in the first metallized film 311 and the second metal layer 72 contained in the second metallized film 312 are in direct contact.

[0069] Similar to the first embodiment, the capacitor body 1 includes a first end-face electrode 21 positioned on one end face and a second end-face electrode 22 positioned on the other end face. The first metal layer 71 is connected to the first end-face electrode 21. The second end-face electrode 22 does not come into contact with the first metal layer 71. The material of the first end-face electrode 21 is not particularly limited, but for example, the same material as the first end-face electrode 21 in the first embodiment can be used. The thickness of the first end-face electrode 21 is not particularly limited, but for example, it can be the same thickness as the end-face electrode 2 in the first embodiment. The second metal layer 72 is connected to the second end-face electrode 22. The first end-face electrode 21 does not come into contact with the second metal layer 72. The material and thickness of the second end-face electrode 22 can be the same as the second end-face electrode 22 in the first embodiment. Similar to the first embodiment, the thickness of the first metal layer 71 near the connection with the first end electrode 21 may be greater than the thickness of the first metal layer 71 in areas other than the connection with the first end electrode 21. The thickness of the second metal layer 72 near the connection with the second end electrode 22 may be greater than the thickness of the second metal layer 72 in areas other than the connection with the second end electrode 22.

[0070] Furthermore, similar to the first embodiment, the first end-face electrode 21 is the negative electrode and the second end-face electrode 22 is the positive electrode. Therefore, improvements in voltage resistance and heat resistance are easily achieved.

[0071] (2.2) Effects The second embodiment also produces the same effects as the first embodiment. That is, the first metal oxide layer 61 or the second metal oxide layer 62 is interposed between the first metal layer 71 and the second metal layer 72. Therefore, the movement of electrons emitted from the first metal layer 71 toward the second metal layer 72 can be suppressed. This makes it possible to improve the voltage resistance and heat resistance of the film capacitor 100.

[0072] Furthermore, as already mentioned, in the second embodiment, the first metal oxide layer 61 and the second metal oxide layer 62 are in direct contact with the first metal layer 71. In this case, oxidation of the first metal layer 71 is less likely to occur. Therefore, there is an advantage in that the moisture resistance of the film capacitor 100 can be improved.

[0073] Furthermore, the second metallized film 312 is manufactured without the arrangement of the metal oxide layer 6. Therefore, the manufacturing cost of the film capacitor 100 according to the second embodiment is easily reduced.

[0074] (3) Third Embodiment (3.1) Film Capacitor The film capacitor 100 according to the third embodiment will be described with reference to Figure 3. Figure 3 shows the two films 3 (metallized film 31 and insulating film 32) separated in order to make the following explanation easier to understand. That is, the metallized film 31 and the insulating film 32 are in direct contact. In the third embodiment, components similar to those in the first or second embodiment are denoted by the same reference numerals as in the first or second embodiment, and detailed explanations may be omitted.

[0075] In the third embodiment, unlike the first or second embodiment, the capacitor body 1 is composed of a metallized film 31 and an insulating film 32. That is, in the third embodiment, the film capacitor 100 comprises a capacitor body 1 in which the metallized film 31 and the insulating film 32 are superimposed and wound together, or in which the metallized film 31 and the insulating film 32 are alternately laminated.

[0076] The metallized film 31 has a constant width in the first direction D1, extends in the second direction D2, and has thickness in the third direction D3. The width and thickness of the metallized film 31 may be the same as, or different from, the width and thickness of, the first metallized film 311 in the first embodiment.

[0077] The metallized film 31 includes a first dielectric film 41, a first metal oxide layer 61, a first metal layer 71, and a second metal layer 72.

[0078] The first dielectric film 41 has a constant width in the first direction D1, extends in the second direction D2, and has thickness in the third direction D3.

[0079] The first dielectric film 41 has a first upper surface 811 and a first lower surface 821 opposite to the first upper surface 811.

[0080] The width and thickness of the first dielectric film 41 may be the same as, or different from, the width and thickness of, the first dielectric film 41 according to the first embodiment.

[0081] The first dielectric film 41 can be constructed using the materials listed as dielectrics constituting the dielectric film 4 according to the first embodiment.

[0082] The first metal oxide layer 61 may contain metal oxides that may be present in the first metal oxide layer 61 according to the first embodiment. Similar to the first embodiment, the first metal oxide layer 61 may contain Al ２ O ３ It is more preferable to include the following. In this case, improvements in dielectric strength and heat resistance are more easily achieved. The thickness of the first metal oxide layer 61 may be the same as or different from the thickness of the first metal oxide layer 61 in the first embodiment.

[0083] The first metal layer 71 may contain metals that may be present in the first metal layer 71 according to the first embodiment. Similar to the first embodiment, it is preferable that the first metal layer 71 contains Al. In this case, improvements in dielectric strength and heat resistance are more easily achieved. The thickness of the first metal layer 71 may be the same as or different from the thickness of the first metal layer 71 according to the first embodiment.

[0084] The second metal layer 72 may contain metals that may be present in the second metal layer 72 according to the first embodiment. Similar to the first embodiment, it is preferable that the second metal layer 72 contains Al. In this case, improvements in dielectric strength and heat resistance are more easily achieved. The thickness of the second metal layer 72 may be the same as or different from the thickness of the second metal layer 72 according to the first embodiment.

[0085] On the first upper surface 811, a first metal oxide layer 61 and a first metal layer 71 are arranged in order of proximity to the first upper surface 811. The first metal oxide layer 61 is in direct contact with the first upper surface 811. The first metal layer 71 is in direct contact with the first metal oxide layer 61.

[0086] A second metal layer 72 is placed on the first lower surface 821. The second metal layer 72 is in direct contact with the first lower surface 821.

[0087] The insulating film 32 has a constant width in the first direction D1, extends in the second direction D2, and has thickness in the third direction D3. The width and thickness of the insulating film 32 may be the same as, or different from, the width and thickness of the second metallized film 312 according to the first embodiment.

[0088] The insulating film 32 includes a second dielectric film 42 and a second metal oxide layer 62.

[0089] The second dielectric film 42 has a constant width in the first direction D1, extends in the second direction D2, and has thickness in the third direction D3. The width and thickness of the second dielectric film 42 may be the same as or different from the width and thickness of the dielectric film 4 according to the first embodiment.

[0090] The second dielectric film 42 has a second upper surface 812 and a second lower surface 822 on the opposite side of the second upper surface 812.

[0091] The width and thickness of the second dielectric film 42 may be the same as, or different from, the width and thickness of, the second dielectric film 42 according to the first embodiment.

[0092] The second dielectric film 42 can be constructed using the materials listed as dielectrics constituting the first dielectric film 41.

[0093] The second metal oxide layer 62 may contain metal oxides that may be present in the second metal oxide layer 62 according to the first embodiment. Similar to the first embodiment, the second metal oxide layer 62 may contain Al ２ O ３ It is preferable to include the following. In this case, improvements in dielectric strength and heat resistance are more easily achieved. The thickness of the second metal oxide layer 62 may be the same as or different from the thickness of the second metal oxide layer 62 according to the first embodiment.

[0094] A second metal oxide layer 62 is disposed on the second lower surface 822. The second metal oxide layer 62 is in direct contact with the second lower surface 822.

[0095] The metallized film 31 and the insulating film 32 are stacked so that the first upper surface 811 side and the second lower surface 822 side face each other. As already mentioned, the metallized film 31 and the insulating film 32 are in direct contact. Therefore, in the third embodiment, the first metal layer 71 contained in the metallized film 31 and the second metal oxide layer 62 contained in the insulating film 32 are in direct contact. Furthermore, the second metal layer 72 contained in the metallized film 31 and the second upper surface 812 of the second dielectric film 42 contained in the insulating film 32 are in direct contact.

[0096] Similar to the first embodiment, the capacitor body 1 includes a first end-face electrode 21 positioned on one end face and a second end-face electrode 22 positioned on the other end face. The first metal layer 71 is connected to the first end-face electrode 21. The second end-face electrode 22 does not come into contact with the first metal layer 71. The material of the first end-face electrode 21 is not particularly limited, but for example, the same material as the first end-face electrode 21 in the first embodiment can be used. The thickness of the first end-face electrode 21 is not particularly limited, but for example, it can be the same thickness as the end-face electrode 2 in the first embodiment. The second metal layer 72 is connected to the second end-face electrode 22. The first end-face electrode 21 does not come into contact with the second metal layer 72. The material and thickness of the second end-face electrode 22 can be the same as the second end-face electrode 22 in the first embodiment. Similar to the first embodiment, the thickness of the first metal layer 71 near the connection with the first end electrode 21 may be greater than the thickness of the first metal layer 71 in areas other than the connection with the first end electrode 21. The thickness of the second metal layer 72 near the connection with the second end electrode 22 may be greater than the thickness of the second metal layer 72 in areas other than the connection with the second end electrode 22.

[0097] Furthermore, similar to the first embodiment, the first end-face electrode 21 is the negative electrode and the second end-face electrode 22 is the positive electrode. Therefore, improvements in voltage resistance and heat resistance are easily achieved.

[0098] (3.2) Effects The third embodiment also produces the same effects as the first or second embodiment. That is, the first metal oxide layer 61 or the second metal oxide layer 62 is interposed between the first metal layer 71 and the second metal layer 72. Therefore, the movement of electrons emitted from the first metal layer 71 toward the second metal layer 72 can be suppressed. This makes it possible to improve the voltage resistance and heat resistance of the film capacitor 100.

[0099] (4) Fourth Embodiment (4.1) Film Capacitor The film capacitor 100 according to the fourth embodiment will be described with reference to Figure 4. Figure 4 shows the two films 3 (metallized film 31 and insulating film 32) separated in order to make the following explanation easier to understand. That is, the metallized film 31 and the insulating film 32 are in direct contact. In the fourth embodiment, components that are the same as those in the first to third embodiments are denoted by the same reference numerals as in the first to third embodiments, and detailed explanations may be omitted.

[0100] In the fourth embodiment, similar to the third embodiment, the capacitor body 1 is composed of a metallized film 31 and an insulating film 32. That is, in the fourth embodiment, the film capacitor 100 comprises a capacitor body 1 in which the metallized film 31 and the insulating film 32 are superimposed and wound together, or in which the metallized film 31 and the insulating film 32 are alternately laminated.

[0101] However, the fourth embodiment differs from the third embodiment in that the second metal oxide layer 62 is included in the metallized film 31 rather than the insulating film 32.

[0102] The metallized film 31 has a constant width in the first direction D1, extends in the second direction D2, and has thickness in the third direction D3. The width and thickness of the metallized film 31 may be the same as, or different from, the width and thickness of, the first metallized film 311 in the first embodiment.

[0103] The metallized film 31 includes a first dielectric film 41, a first metal oxide layer 61, a first metal layer 71, a second metal oxide layer 62, and a second metal layer 72.

[0104] The first dielectric film 41 has a constant width in the first direction D1, extends in the second direction D2, and has thickness in the third direction D3.

[0105] The first dielectric film 41 has a first upper surface 811 and a first lower surface 821 opposite to the first upper surface 811.

[0106] The width and thickness of the first dielectric film 41 may be the same as, or different from, the width and thickness of, the first dielectric film 41 according to the first embodiment.

[0107] The first dielectric film 41 can be constructed using the materials listed as dielectrics constituting the first dielectric film 41 according to the first embodiment.

[0108] The first metal oxide layer 61 may contain metal oxides that may be present in the first metal oxide layer 61 according to the first embodiment. Similar to the first embodiment, the first metal oxide layer 61 may contain Al ２ O ３ It is more preferable to include the following. In this case, improvements in dielectric strength and heat resistance are more easily achieved. The thickness of the first metal oxide layer 61 may be the same as or different from the thickness of the first metal oxide layer 61 in the first embodiment.

[0109] The first metal layer 71 may contain metals that may be present in the first metal layer 71 according to the first embodiment. Similar to the first embodiment, it is preferable that the first metal layer 71 contains Al. In this case, improvements in dielectric strength and heat resistance are more easily achieved. The thickness of the first metal layer 71 may be the same as or different from the thickness of the first metal layer 71 according to the first embodiment.

[0110] The second metal oxide layer 62 may contain metal oxides that may be present in the second metal oxide layer 62 according to the first embodiment. Similar to the first embodiment, the second metal oxide layer 62 may contain Al ２ O ３ It is preferable to include the following. In this case, improvements in dielectric strength and heat resistance are more easily achieved. The thickness of the second metal oxide layer 62 may be the same as or different from the thickness of the second metal oxide layer 62 according to the first embodiment.

[0111] The second metal layer 72 may contain metals that may be present in the second metal layer 72 according to the first embodiment. Similar to the first embodiment, it is preferable that the second metal layer 72 contains Al. In this case, improvements in dielectric strength and heat resistance are more easily achieved. The thickness of the second metal layer 72 may be the same as or different from the thickness of the second metal layer 72 according to the first embodiment.

[0112] On the first upper surface 811, a first metal oxide layer 61, a first metal layer 71, and a second metal oxide layer 62 are arranged in order from closest to the first upper surface 811. The first metal oxide layer 61 is in direct contact with the first upper surface 811. The first metal layer 71 is in direct contact with the first metal oxide layer 61. The second metal oxide layer 62 is in direct contact with the first metal layer 71.

[0113] Thus, when the first metal layer 71 is positioned between the first metal oxide layer 61 and the second metal oxide layer 62 so as to be in direct contact with the first metal oxide layer 61 and the second metal oxide layer 62, oxidation of the first metal layer 71 becomes less likely. This improves the moisture resistance of the film capacitor 100.

[0114] A second metal layer 72 is placed on the first lower surface 821. The second metal layer 72 is in direct contact with the first lower surface 821.

[0115] The insulating film 32 has a constant width in the first direction D1, extends in the second direction D2, and has thickness in the third direction D3. The width and thickness of the insulating film 32 may be the same as, or different from, the width and thickness of the second metallized film 312 according to the first embodiment.

[0116] The insulating film 32 includes the second dielectric film 42. In other words, in the fourth embodiment, the insulating film 32 does not include the metal oxide layer 6.

[0117] The second dielectric film 42 has a constant width in the first direction D1, extends in the second direction D2, and has thickness in the third direction D3. The width and thickness of the second dielectric film 42 may be the same as or different from the width and thickness of the second dielectric film 42 according to the first embodiment.

[0118] The second dielectric film 42 has a second upper surface 812 and a second lower surface 822 on the opposite side of the second upper surface 812.

[0119] The second dielectric film 42 can be constructed using the materials listed as dielectrics constituting the first dielectric film 41.

[0120] The metallized film 31 and the insulating film 32 are stacked so that their first upper surface 811 and second lower surface 822 face each other. As already mentioned, the metallized film 31 and the insulating film 32 are in direct contact. Therefore, in the fourth embodiment, the second metal oxide layer 62 contained in the metallized film 31 and the second lower surface 822 of the second dielectric film 42 contained in the insulating film 32 are in direct contact. Furthermore, the second metal layer 72 contained in the metallized film 31 and the second upper surface 812 of the second dielectric film 42 contained in the insulating film 32 are in direct contact.

[0121] Similar to the first embodiment, the capacitor body 1 includes a first end-face electrode 21 positioned on one end face and a second end-face electrode 22 positioned on the other end face. The first metal layer 71 is connected to the first end-face electrode 21. The second end-face electrode 22 does not come into contact with the first metal layer 71. The material of the first end-face electrode 21 is not particularly limited, but for example, the same material as the first end-face electrode 21 in the first embodiment can be used. The thickness of the first end-face electrode 21 is not particularly limited, but for example, it can be the same thickness as the end-face electrode 2 in the first embodiment. The second metal layer 72 is connected to the second end-face electrode 22. The first end-face electrode 21 does not come into contact with the second metal layer 72. The material and thickness of the second end-face electrode 22 can be the same as the second end-face electrode 22 in the first embodiment. Similar to the first embodiment, the thickness of the first metal layer 71 near the connection with the first end electrode 21 may be greater than the thickness of the first metal layer 71 in areas other than the connection with the first end electrode 21. The thickness of the second metal layer 72 near the connection with the second end electrode 22 may be greater than the thickness of the second metal layer 72 in areas other than the connection with the second end electrode 22.

[0122] Furthermore, similar to the first embodiment, the first end-face electrode 21 is the negative electrode and the second end-face electrode 22 is the positive electrode. Therefore, improvements in voltage resistance and heat resistance are easily achieved.

[0123] (4.2) Effects The fourth embodiment also produces the same effects as the first to third embodiments. That is, the first metal oxide layer 61 or the second metal oxide layer 62 is interposed between the first metal layer 71 and the second metal layer 72. Therefore, the movement of electrons emitted from the first metal layer 71 toward the second metal layer 72 can be suppressed. This makes it possible to improve the voltage resistance and heat resistance of the film capacitor 100.

[0124] Furthermore, as already mentioned, in the fourth embodiment, the first metal layer 71 is positioned between the first metal oxide layer 61 and the second metal oxide layer 62 so as to be in direct contact with the first metal oxide layer 61 and the second metal oxide layer 62. In this case, oxidation of the first metal layer 71 is less likely to occur. Therefore, there is an advantage in that the moisture resistance of the film capacitor 100 can be improved.

[0125] Furthermore, the insulating film 32 can be manufactured using only the dielectric film 4. In other words, there is no need to arrange the metal oxide layer 6 and the metal layer 7 when manufacturing the insulating film 32. Therefore, the manufacturing cost of the film capacitor 100 according to the fourth embodiment is particularly easy to reduce.

[0126] (5) Summary As described above, according to the embodiment, in the film capacitor 100, by interposing the first metal oxide layer 61 or the second metal oxide layer 62 between the first metal layer 71 and the second metal layer 72, the movement of electrons emitted from the first metal layer 71 toward the second metal layer 72 can be suppressed. This improves the dielectric strength and heat resistance of the film capacitor 100. As a result, thermal decomposition and dielectric breakdown of the first dielectric film 41 or the second dielectric film 42 can be suppressed.

[0127] The metallized film 31 included in the film capacitor 100 according to this embodiment is suitably used for manufacturing the film capacitor 100. In other words, the metallized film 31 according to this embodiment is for use in film capacitors.

[0128] This disclosure is not limited to the embodiments described above, and can be modified as appropriate within the scope of the claims and equivalents thereof. For example, the capacitor body 1 does not have to have an end electrode 2. Alternatively, if the capacitor body 1 has an end electrode 2, the first end electrode 21 may be connected to the positive terminal of the power supply, and the second end electrode 22 may be connected to the negative terminal of the power supply. In other words, the first end electrode 21 may be the positive terminal and the second end electrode 22 may be the negative terminal. The same effects and advantages as in the embodiments described above can be obtained in such embodiments as well.

[0129] 3. Aspects As will be clear from the above embodiments, this disclosure includes the following aspects. Hereafter, reference numerals are enclosed in parentheses solely to indicate their correspondence with the embodiments.

[0130] A film capacitor (100) according to a first aspect of the present disclosure comprises a capacitor body (1) formed by winding together a first metallized film (311) and a second metallized film (312) or by alternately stacking the first metallized film (311) and the second metallized film (312). The first metallized film (311) includes a first dielectric film (41), a first metal oxide layer (61), and a first metal layer (71). The first dielectric film (41) has a first upper surface (811) and a first lower surface (821) opposite to the first upper surface (811). On the first upper surface (811), the first metal oxide layer (61) and the first metal layer (71) are arranged in order from the first upper surface (811). The second metallized film (312) includes a second dielectric film (42), a second metal oxide layer (62), and a second metal layer (72). The second dielectric film (42) has a second upper surface (812) and a second lower surface (822) opposite to the second upper surface (812). The second metal layer (72) is disposed on the second upper surface (812). The second metal oxide layer (62) is disposed on the second lower surface (822). The first metallized film (311) and the second metallized film (312) are stacked such that the first upper surface (811) side and the second lower surface (822) side face each other.

[0131] According to this embodiment, a film capacitor (100) can be provided that can achieve improved voltage resistance and heat resistance.

[0132] A film capacitor (100) according to a second aspect of the present disclosure comprises a capacitor body (1) formed by winding together a first metallized film (311) and a second metallized film (312) or by alternately stacking the first metallized film (311) and the second metallized film (312). The first metallized film (311) includes a first dielectric film (41), a first metal oxide layer (61), a first metal layer (71), and a second metal oxide layer (62). The first dielectric film (41) has a first upper surface (811) and a first lower surface (821) opposite to the first upper surface (811). On the first upper surface (811), the first metal oxide layer (61), the first metal layer (71), and the second metal oxide layer (62) are arranged in order from the first upper surface (811). The second metallized film (312) includes a second dielectric film (42) and a second metal layer (72). The second dielectric film (42) has a second upper surface (812) and a second lower surface (822) opposite to the second upper surface (812). The second metal layer (72) is disposed on the second upper surface (812). The first metallized film (311) and the second metallized film (312) are stacked such that the first upper surface (811) side and the second lower surface (822) side face each other.

[0133] A film capacitor (100) according to a third aspect of the present disclosure comprises a capacitor body (1) formed by winding a metallized film (31) and an insulating film (32) in layers, or by alternately stacking a metallized film (31) and an insulating film (32). The metallized film (31) includes a first dielectric film (41), a first metal oxide layer (61), a first metal layer (71), and a second metal layer (72). The first dielectric film (41) has a first upper surface (811) and a first lower surface (821) opposite to the first upper surface (811). On the first upper surface (811), the first metal oxide layer (61) and the first metal layer (71) are arranged in order from the first upper surface (811). On the first lower surface (821), the second metal layer (72) is arranged. The insulating film (32) includes a second dielectric film (42) and a second metal oxide layer (62). The second dielectric film (42) has a second upper surface (812) and a second lower surface (822) opposite to the second upper surface (812). The second metal oxide layer (62) is disposed on the second lower surface (822). The metallized film (31) and the insulating film (32) are stacked so that the first upper surface (811) side and the second lower surface (822) side face each other.

[0134] A film capacitor (100) according to a fourth aspect of the present disclosure comprises a capacitor body (1) formed by winding a metallized film (31) and an insulating film (32) in layers, or by alternately stacking a metallized film (31) and an insulating film (32). The metallized film (31) includes a first dielectric film (41), a first metal oxide layer (61), a first metal layer (71), a second metal oxide layer (62), and a second metal layer (72). The first dielectric film (41) has a first upper surface (811) and a first lower surface (821) opposite to the first upper surface (811). On the first upper surface (811), the first metal oxide layer (61), the first metal layer (71), and the second metal oxide layer (62) are arranged in order from the first upper surface (811). A second metal layer (72) is disposed on the first lower surface (821). The insulating film (32) includes a second dielectric film (42). The second dielectric film (42) has a second upper surface (812) and a second lower surface (822) opposite to the second upper surface (812). The metallized film (31) and the insulating film (32) are stacked so that the first upper surface (811) side and the second lower surface (822) side face each other.

[0135] A film capacitor (100) according to a fifth aspect of the present disclosure, in any one of the first to fourth aspects, the first metal layer (71) and the second metal layer (72) contain Al. The first metal oxide layer (61) and the second metal oxide layer (62) contain Al ２ O ３ Includes.

[0136] A film capacitor (100) according to a sixth aspect of the present disclosure, in any one of the first to fifth aspects, comprises a capacitor body (1) having a first end-face electrode (21) disposed on one end face and a second end-face electrode (22) disposed on the other end face. A first metal layer (71) is connected to the first end-face electrode (21), and a second metal layer (72) is connected to the second end-face electrode (22).

[0137] In the seventh aspect of the present disclosure, the film capacitor (100) is, in the sixth aspect, a first end-face electrode (21) is a negative electrode and a second end-face electrode (22) is a positive electrode.

[0138] A metallized film (31) for a film capacitor according to an eighth aspect of the present disclosure includes a dielectric film (4), a metal oxide layer (6), and a metal layer (7). The dielectric film (4) has an upper surface (81) and a lower surface (82) opposite to the upper surface (81). The metal layer (7) is disposed on the upper surface (81). The metal oxide layer (6) is disposed on the lower surface (82).

[0139] A metallized film (31) for a film capacitor according to a ninth aspect of the present disclosure includes a dielectric film (4), two metal oxide layers (6), and a metal layer (7). The dielectric film (4) has an upper surface (81) and a lower surface (82) opposite to the upper surface (81). On the upper surface (81), one metal oxide layer (6), the metal layer (7), and the other metal oxide layer (6) are arranged in order from the upper surface (81) in that order.

[0140] A metallized film (31) for a film capacitor according to a tenth aspect of the present disclosure includes a dielectric film (4), a metal oxide layer (6), and two metal layers (7). The dielectric film (4) has an upper surface (81) and a lower surface (82) opposite to the upper surface (81). On the upper surface (81), the metal oxide layer (6) and one of the metal layers (7) are arranged in order from the upper surface (81). On the lower surface (82), the other metal layer (7) is arranged.

[0141] A metallized film (31) for a film capacitor according to an eleventh aspect of the present disclosure includes a dielectric film (4), two metal oxide layers (6), and two metal layers (7). The dielectric film (4) has an upper surface (81) and a lower surface (82) opposite to the upper surface (81). On the upper surface (81), one metal oxide layer (6), one metal layer (7), and the other metal oxide layer (6) are arranged in order from the upper surface (81). The other metal layer (7) is arranged on the lower surface (82).

[0142] In the twelfth aspect of this disclosure, the metallized film (31) for film capacitors, in any one of the eighth to eleventh aspects, the metal layer (7) contains Al. The metal oxide layer (6) contains Al ２ O ３ Includes.

[0143] 1 Capacitor body 100 Film capacitor 2 End face electrodes 21 First end face electrode 22 Second end face electrode 3 Film 31 Metallized film 311 First metallized film 312 Second metallized film 32 Insulating film 4 Dielectric film 41 First dielectric film 42 Second dielectric film 6 Metal oxide layer 61 First metal oxide layer 62 Second metal oxide layer 7 Metal layer 71 First metal layer 72 Second metal layer 81 Top surface 82 Bottom surface 811 First top surface 821 First bottom surface 812 Second top surface 822 Second bottom surface

Claims

1. The capacitor body comprises a first metallized film and a second metallized film superimposed and wound together, or a first metallized film and a second metallized film alternately laminated, wherein the first metallized film includes a first dielectric film, a first metal oxide layer, and a first metal layer, the first dielectric film has a first upper surface and a first lower surface opposite to the first upper surface, the first metal oxide layer and the first metal layer are arranged on the first upper surface in order from the first upper surface, the second metallized film includes a second dielectric film, a second metal oxide layer, and a second metal layer, the second dielectric film has a second upper surface and a second lower surface opposite to the second upper surface, the second metal layer is arranged on the second upper surface, and the second metal oxide layer is arranged on the second lower surface, A film capacitor in which the first metallized film and the second metallized film are stacked so that the first upper surface and the second lower surface face each other.

2. A film capacitor comprising a capacitor body formed by winding together a first metallized film and a second metallized film, or by alternately stacking a first metallized film and a second metallized film, wherein the first metallized film includes a first dielectric film, a first metal oxide layer, a first metal layer, and a second metal oxide layer, the first dielectric film has a first upper surface and a first lower surface opposite to the first upper surface, the first metal oxide layer, a first metal layer, and a second metal oxide layer arranged on the first upper surface in order from the first upper surface, the second metallized film includes a second dielectric film and a second metal layer, the second dielectric film has a second upper surface and a second lower surface opposite to the second upper surface, the second metal layer is arranged on the second upper surface, and the first metallized film and the second metallized film are stacked so that the first upper surface side and the second lower surface side face each other.

3. A film capacitor comprising a capacitor body formed by winding a metallized film and an insulating film in layers, or by alternately laminating a metallized film and an insulating film, wherein the metallized film includes a first dielectric film, a first metal oxide layer, a first metal layer, and a second metal layer, the first dielectric film has a first upper surface and a first lower surface opposite to the first upper surface, the first metal oxide layer and the first metal layer are arranged on the first upper surface in order from the first upper surface, and the second metal layer is arranged on the first lower surface, the insulating film includes a second dielectric film and a second metal oxide layer, the second dielectric film has a second upper surface and a second lower surface opposite to the second upper surface, and the second metal oxide layer is arranged on the second lower surface, and the metallized film and the insulating film are stacked so that the first upper surface side and the second lower surface side face each other.

4. A film capacitor comprising a capacitor body formed by winding a metallized film and an insulating film in layers, or by alternately laminating a metallized film and an insulating film, wherein the metallized film includes a first dielectric film, a first metal oxide layer, a first metal layer, a second metal oxide layer, and a second metal layer, the first dielectric film has a first upper surface and a first lower surface opposite to the first upper surface, the first metal oxide layer, the first metal layer, and the second metal oxide layer are arranged on the first upper surface in order from the first upper surface, and the second metal layer is arranged on the first lower surface, the insulating film includes a second dielectric film, the second dielectric film has a second upper surface and a second lower surface opposite to the second upper surface, and the metallized film and the insulating film are stacked such that the first upper surface side and the second lower surface side face each other.

5. The first metal layer and the second metal layer contain Al, and the first metal oxide layer and the second metal oxide layer contain Al ２ O ３ A film capacitor according to any one of claims 1 to 4, including the following:

6. The film capacitor according to any one of claims 1 to 5, wherein the capacitor body comprises a first end-face electrode disposed on one end face and a second end-face electrode disposed on the other end face, the first metal layer is connected to the first end-face electrode and the second metal layer is connected to the second end-face electrode.

7. The film capacitor according to claim 6, wherein the first end electrode is a negative electrode and the second end electrode is a positive electrode.

8. A metallized film for a film capacitor, comprising a dielectric film, a metal oxide layer, and a metal layer, wherein the dielectric film has an upper surface and a lower surface opposite to the upper surface, the metal layer is disposed on the upper surface, and the metal oxide layer is disposed on the lower surface.

9. A metallized film for a film capacitor, comprising a dielectric film, two metal oxide layers, and a metal layer, wherein the dielectric film has an upper surface and a lower surface opposite to the upper surface, and on the upper surface, one of the metal oxide layers, the metal layer, and the other metal oxide layer are arranged in order from the upper surface.

10. A metallized film for a film capacitor, comprising a dielectric film, a metal oxide layer, and two metal layers, wherein the dielectric film has an upper surface and a lower surface opposite to the upper surface, the metal oxide layer and one of the metal layers are arranged on the upper surface in order from the upper surface, and the other metal layer is arranged on the lower surface.

11. A metallized film for a film capacitor, comprising a dielectric film, two metal oxide layers, and two metal layers, wherein the dielectric film has an upper surface and a lower surface opposite to the upper surface, and on the upper surface, one of the metal oxide layers, one of the metal layers, and the other metal oxide layer are arranged in order from the upper surface, and the other metal layer is arranged on the lower surface.

12. The metal layer contains Al, and the metal oxide layer contains Al ２ O ３ A metallized film for a film capacitor according to any one of claims 8 to 11, including the following:

Images