Semiconductor device comprising mxene composite material and related method

Abstract

A semiconductor device comprises an anode of a composite MXene material with gold nanoparticles. A related method of forming a semiconductor device comprises providing an anode by printing an ink comprising a composite MXene with gold nanoparticles.

Description

SEMICONDUCTOR DEVICE COMPRISING MXENE COMPOSITE MATERIAL AND RELATED METHODTECHNICAL FIELD

[0001] The following relates, generally, to a construction and related method for forming a semiconductor device, and more particularly to such a device and method in which a MXene composite material is used for one of the electrodes.BACKGROUND

[0002] Printing an electrode on top of a semiconductor layer usually causes a short circuit in electronics, particularly organic electronics, such as organic light-emitting displays (OLED) and organic photovoltaics (OPV). As a result, the evaporation process remains the most reliable deposition method for the top electrode. However, the integration of this process in the manufacturing of flexible electronics can be challenging and expensive.

[0003] If it is desired to form the top electrode by printing, then a printed top electrode may cause low manufacturing yield due to the penetration of top electrode diffusion through the active layer. The most common solution is to print a thick layer of hole transporting layer (HTL), such as PEDOT:PSS, in between the active layer and the top electrode. However, this HTL material is acidic and hydroscopic in nature, and as such may affect the long-term stability of devices. That is, it is known that PEDOT:PSS may have a significant negative impact on the OPV lifetime due to ionic diffusion.

[0004] Alternatively to PEDOT:PSS, metal oxides, such as molybdenum oxide (MoOx) or vanadium oxide (VOx), may be used as a hole transporting layer and function as an electronblocking layer for the printed Ag anode. However, the reliability and manufacturing yield is often affected by the presence of pinholes in the metal oxide layer and using a thicker layer of metal oxide could significantly reduce the performance of devices.

[0005] MXenes are a family of 2D transition metal carbides, nitrides, and carbonitrides that, since 2011 , have attracted increasing research attention for their exceptional electronic and chemical properties. Named for their structural similarity to graphene, MXenes have been demonstrated in sensor platforms, energy storage devices, and electromagnetic interference shielding applications. A wide variety of layered MXene materials with the generic formula Mn+iXnTx(n = 1- 3) can be generated by selectively removing a group 11 IA or IVA element by etching a MAX phaseprecursor (Mn+iAXn). These layers can be further functionalized, intercalated, or delaminated, broadening the range of possible applications. TisC2TxMXene has demonstrated remarkable electrical conductivity up to 24,000 S / cm, and its work function can be modified through surface modifications or additives. Additionally, TisC2TxMXenes can be deposited by a range of solution processing methods in both aqueous and organic solvents through the suspension of delaminated sheets. Thus, the use of conductive TisC2TxMXene has great potential for printed organic electronics to increase manufacturing yields and reduce cost. It can potentially substitute the costly gold, silver, or indium tin oxide (ITO) electrodes, which have been commonly used in organic electronics and which either require vacuum deposition or complex ink formulations for printing.

[0006] As previously alluded, MXenes have been demonstrated in organic photovoltaic (OPV) devices as an interfacial layer, anode, and cathode through work function modifications. On the other hand, MXenes with gold nanoparticle composites have been demonstrated as electrochemical catalysts and sensors; however, to the present inventors’ best knowledge, MXene:AuNP composites have not been demonstrated in OPVs. As AuNPs exhibit unique optical properties related to localized surface plasmon resonance, they can enhance light absorption and, overall, the performance of OPV devices. It has been shown that integrating AuNPs with PEDOT:PSS in various configurations of OPV devices can also improve charge extraction at the hole transport layer (HTL) interface.

[0007] Aerosol-jet printing is a non-contact deposition technique that has become a robust and reliable additive manufacturing process for printable electronics. It can achieve micrometer resolution and print inks with a wide range of viscosity (1 to 1000 centipoise). The thickness of aerosol-jet-printed films is controlled by print speed and carrier gas pressure. By dispersing MXenes in DI water, compatibility with aerosol-jet printing can be easily achieved through pneumatic or ultrasonic modes without the need for additives.

[0008] It is difficult to find an alternate printable conductive material for use as a top electrode; manufacturing reliability is always a concern. MXene has been demonstrated as the bottom electrode or hole transporting layer (HTL) for printed electronics. A mixture of MXene with Au nanoparticles has been applied for sensing applications due to its large surface contact area, but it is believed to never have been applied as the top electrode for a printed OPV or OLED.SUMMARY

[0009] According to an aspect of the invention, there is provided a semiconductor device comprising: a substrate; a cathode supported by the substrate; an anode supported by the substrate and facing the cathode; an electron transport layer provided between the cathode and the anode and in contact with the cathode; and a functional layer associated with a function of the semiconductor device and comprising semiconductor material, the functional layer being provided between the electron transport layer and the anode and in contact with the electron transport layer; wherein the anode comprises a composite MXene material with gold nanoparticles.

[0010] This provides an arrangement in which MXene, which normally has a high work function to be suited for use as an anode, can be adapted as such by combination with gold nanoparticles. In some arrangements, the composite MXene material acts to protect the functional layer.

[0011] Typically, the anode essentially comprises MXene and gold nanoparticles.

[0012] In one arrangement, the anode comprising the composite MXene material with the gold nanoparticles is in contact with the functional layer.

[0013] In another arrangement, the semiconductor construction further includes a hole transport layer provided between the functional layer and the anode and in contact with the anode.

[0014] In an arrangement, the cathode is provided in contact with the substrate and the anode is in opposed relation thereto. Thus, the construction is of an inverted type. In this configuration, the constituent material of composite MXene with gold nanoparticles as the anode acts to protect the functional layer as a hole collection layer.

[0015] In an arrangement, the semiconductor material comprises bulk heterojunction materials. For example, the bulk heterojunction materials comprise organic material.

[0016] In an arrangement, the semiconductor material comprises perovskite.

[0017] In an arrangement, the semiconductor material comprises nanoparticles or quantum dots.

[0018] In an arrangement, the functional layer is one of an emitting layer and an absorbing layer. Thus, the semiconductor device is suited for use either as an organic light-emitting diode (OLED), an organic photovoltaic (OPV), a perovskite photovoltaic cell, or a photodetector.

[0019] According to another aspect of the invention, there is provided a method for forming a semiconductor device comprising: providing a substrate; providing a cathode to be supported by the substrate; providing an anode to be supported by the substrate and facing the cathode; providing an electron transport layer between the cathode and the anode and in contact with the cathode; providing a functional layer associated with a function of the semiconductor device and comprising semiconductor material, the functional layer being provided between the electron transport layer and the anode and in contact with the electron transport layer; wherein providing the anode comprises printing an ink comprising a composite MXene material with gold nanoparticles.

[0020] In an arrangement, the ink is printed onto the functional layer such that the anode is provided in contact therewith.

[0021] In an alternative arrangement, the method further includes providing a hole transport layer between the functional layer and the anode, and the ink is printed onto the hole transport layer such that the anode is provided in contact therewith.

[0022] In an arrangement, the cathode is provided in contact with the substrate and the anode is in opposed relation thereto.

[0023] In an arrangement, the semiconductor material comprises bulk heterojunction materials. For example, the bulk heterojunction materials comprise organic material.

[0024] In an arrangement, the semiconductor material comprises perovskite.

[0025] In an arrangement, the semiconductor material comprises nanoparticles or quantum dots.

[0026] In an arrangement, the functional layer is one of an emitting layer and an absorbing layer.

[0027] According to another aspect of the invention, there is provided use of a composite conductive material essentially comprising MXene and gold nanoparticles as an anode in a semiconductor device.

[0028] These and other aspects are contemplated and described herein. It will be appreciated that the foregoing summary sets out representative aspects of the invention to assist skilled readers in understanding the following detailed description.BRIEF DESCRIPTION OF THE DRAWINGS

[0029] A greater understanding of the embodiments will be had with reference to the Figures, in which:

[0030] FIG. 1 is a schematic diagram of an arrangement of semiconductor device according to the present invention;

[0031] FIG. 2 is a schematic diagram of another arrangement of semiconductor device according to the present invention;

[0032] FIG. 3 is a schematic diagram of yet another arrangement of semiconductor device according to the present invention;

[0033] FIG. 4 is a schematic diagram of a yet further arrangement of semiconductor device according to the present invention;

[0034] FIG. 5 is a flowchart of an arrangement of method for forming a semiconductor device according to the present invention;

[0035] FIG. 6 shows structures of organic photovoltaics for inverted OPV, and more specifically, with evaporated MoOx as HTL and Ag as top electrode (left), and printed MXene or MXene:Au as a top anode without HTL (right);

[0036] FIG. 7 shows J-V curves of PM6:Y6-based OPV devices with different anode electrodes;

[0037] FIGS. 8A through 8F show optical images of aerosol-printed MXene, Ti3C2Tx, and more specifically, (a) de-wetted edges and overspray with a low magnification; (b) rough surface image with a higher magnification; (c) a SEM image of the surface profile of printed MXene at 50K magnification with 3kV; (d) similar to FIG. 6C, but with 10kV; (e) printed MXene:AuNP SEM measured at 50K magnification with 3 kV and higher contrast of AuNP observed at 110K magnification; and (f) similar to FIG. 8E but with 10kV;

[0038] FIGS. 9A through 9D show conductivity and stability of TiaC2Tx MXene and MXene:AuNP films relative to time and temperature; and

[0039] FIGS. 10A and 10B show sensitivity to ammonia gas MXene and MXene:AuNP films.DETAILED DESCRIPTION

[0040] For simplicity and clarity of illustration, where considered appropriate, reference numerals may be repeated among the Figures to indicate corresponding or analogous elements. In addition, numerous specific details are set forth in order to provide a thorough understanding of the embodiments described herein. However, it will be understood by those of ordinary skill in the art that the embodiments described herein may be practised without these specific details. In other instances, well-known methods, procedures and components have not been described in detail so as not to obscure the embodiments described herein. Also, the description is not to be considered as limiting the scope of the embodiments described herein.

[0041] Various terms used throughout the present description may be read and understood as follows, unless the context indicates otherwise: “or” as used throughout is inclusive, as though written “and / or”; singular articles and pronouns as used throughout include their plural forms, and vice versa; similarly, gendered pronouns include their counterpart pronouns so that pronouns should not be understood as limiting anything described herein to use, implementation, performance, etc. by a single gender. Further definitions for terms may be set out herein; these may apply to prior and subsequent instances of those terms, as will be understood from a reading of the present description.

[0042] The accompanying figures show a semiconductor device for electronics, generally indicated at 10. The device 10 generally comprises a substrate 12, a cathode 14 (electrode) supported by the substrate, an anode 16 (electrode) supported by the substrate and facing the cathode, an electron transport layer (ETL) 18 provided between the cathode 14 and the anode 16and in contact with the cathode, and a functional or active layer 20 associated with a function of the semiconductor device and comprising semiconductor material. The functional layer 20 is provided between the ETL 18 and the anode 16 and is in contact with the ETL. Consequently is formed a stacked arrangement of layers of different materials, that is a layered structure, across which an electrical field (voltage) is applied to conduce movement of electrons from the anode 16, through the functional layer 20 and to the cathode 14. The cathode serves to inject electrons into the ETL, while the ETL serves to satisfactorily transport electrons injected from the cathode towards the functional / active layer, and the anode serves to supply holes for injection towards the functional / active layer.

[0043] The device 10 has a unique construction in that the anode 16 comprises a composite MXene material with gold nanoparticles (Au NP). This provides a transitional metal compound, which has suitable electrical conductivity for semiconductor use, with a lowered work function compared to MXene alone that renders the composite material suitable for use as an anode. The Au NP are generally sized between 1 nm and 100 nm, and are provided in a ratio of about 0.1 % to about 10% of the MXene. Furthermore, typically the anode 16 essentially comprises MXene and Au NP.

[0044] In one illustrated arrangement, as for example more clearly shown in FIG. 1 , the composite MXene AuNP anode 16 is provided in contact with the functional layer 20. This is because the work function of the anode 16 is sufficiently low to facilitate electron transfer to the functional layer, such that a hole transport layer (HTL) as is conventionally provided in semiconductor device can be omitted. However, as shown in FIG. 2, in an alternative arrangement, a semiconductor device 10’ further includes a HTL 24 provided between the functional layer 20 and the anode 16 and in contact with the anode. Generally speaking, the HTL 24 is also in contact with the functional layer. The adjacent HTL 24 (to the anode) serves to further reduce the work function of the adjacent layers to promote release of electrons to the functional layer 20.

[0045] In the illustrated arrangements of FIGS. 1 and 2, the cathode 14 is provided in contact with the substrate 12 and the anode 16 is in opposed relation to the substrate 12, as to be in spaced relation thereto. Thus, the semiconductor device construction is of an inverted type in which the anode is a finally applied layer during manufacturing of the semiconductor. In the inverted arrangement, the composite MXene-Au NP acts as the anode and may optionally serve as a hole transporting layer (HTL).

[0046] In alternative arrangements such as those shown in FIGS. 3 and 4 and indicated at 10” and 10”’, the anode 16 is provided in contact with the substrate 12 and the cathode 14 is in opposed relation to the substrate 12. This corresponds to a conventional type or orientation of the layers in which the cathode is the finally applied layer during manufacturing. It will appreciated that in this orientation of layers, the HTL 24 may be omitted as in FIG. 3 or included as in FIG. 4.

[0047] Depending on the function of the semiconductor device, the semiconductor material of the functional layer may comprise bulk heterojunction materials, for example, organic such material. Additionally or alternatively, the semiconductor material may comprise perovskite. Additionally or alternatively, the semiconductor material may comprise nanoparticles or quantum dots, particularly if the semiconductor device is a photodetector.

[0048] Further, as in the illustrated arrangements, it will be appreciated that the functional layer 20 may be either an emitting layer, as that in an organic light-emitting diode (OLED), or an absorbing layer, as that in an organic photovoltaic (OPV) cell, a perovskite photovoltaic cell, or a photodetector.

[0049] Thus, as described hereinbefore, the present invention relates in an aspect to use of a composite conductive material essentially comprising MXene and gold nanoparticles as an anode in a semiconductor device.

[0050] Furthermore, there is also disclosed herein a method 50 for forming a semiconductor device. With reference to FIG. 5, the method generally comprises steps of providing a substrate, as at block 52; providing a cathode to be supported by the substrate, as at block 54; providing an anode to be supported by the substrate and facing the cathode, as at block 55; providing an electron transport layer between the cathode and the anode and in contact with the cathode, as at block 56; and providing a functional layer between the electron transport layer and the anode and in contact with the electron transport layer, as at block 58. Specifically, providing the anode at block 55 comprises printing an ink comprising a composite MXene material with gold nanoparticles.

[0051] Preferably, the ink essentially comprises the MXene and the gold nanoparticles in water. Thus, the ink is an aqueous form of the composite MXene and AuNP material.

[0052] Preferably, the ink is printed onto the functional layer such that the anode is provided in contact therewith.

[0053] The method may further include providing a hole transport layer between the functional layer and the anode, as at block 62. In this case, the ink is printed onto the hole transport layer such that the anode is provided in contact therewith.

[0054] It will be appreciated that the sequence of steps illustrated in FIG. 5 is representative of formation or fabrication of an inverted type of semiconductor. To form a non-inverted or conventional type of semiconductor, in which the cathode is opposite the substrate, the sequence of steps shown in FIG. 5 from block 54 to block 55 would be inverted, that is, reversed. As such, printing the ink to form the anode of MXene:AuNP would follow providing the substrate, and providing the functional layer would follow printing the ink, and so on.

[0055] In one example, an aerosol-jet printed MXene:AuNP film was incorporated in a bulk heterojunction OPV structure as the top anode electrode. The active layer was spin coated from a blend mixture of PM6 and Y6 dissolved in chloroform with a PM6:Y6 ratio of 1 :1.2 (by weight), thus forming the organic bulk heterojunction material. Pre-patterned indium-tin oxide was used as a transparent cathode electrode, and zinc oxide nanoparticles were used for the electron extraction or transport layer. Performance thereof A vacuum-deposited bilayer molybdenum oxide (as HTL) and Ag electrode is used for reference devices. The chemical structures of PM6 and Y6 and the structures of OPV devices are shown in FIG. 6. All devices have a 1 cm2active area and were tested under air mass 1.5 global (AM 1.5G) irradiation of 100 mW / cm2. Photovoltaic parameters and J-V curves are presented in Table 1 and FIG. 7, respectively.

[0056] The present inventors observed that the power conversion efficiency of OPV devices with molybdenum oxide (MoOx) interlayer was reduced from 14.9% to 8.8% when using aerosol-jet printed MXene as the top electrode. This primarily may be due to the lower conductivity of MXene (with or without AuNP) compared to the evaporated Ag electrode, which decreased the fill factor (FF) from 0.71 to 0.61 and reduced the short-circuit current density (Jsc) by 25%. The poor reflection of the MXene electrode at the interface with the MoOx layer may also contribute to the reduction of Jsc through optical losses. The open circuit voltage (Voc) dropped from 0.82 V to 0.73 V, likely correlated with the decrease in Jsc.Table 1 : Photovoltaic parameters of PM6:Y6-based OPV devices with different anode electrodes.

[0057] The set of devices with the MXene electrode and without the MoOx interlayer showed a clear photovoltaic response (maximum PCE of 6.2%) compared to the set with the Ag electrode. In the absence of HTL, the Ag-based devices were shorted due to a work function mismatch at the active layer / anode interface, which restricted the flow of electrons.

[0058] The MXene devices with and without HTL show comparable Jsc, but the fill factor and Voc were decreased in the HTL-free structure because of the substantial energy barrier at the interface with the active layer. On the other hand, the device made with MXene:AuNP and without HTL showed a higher PCE (8.8%) with increased fill factor and Voc. The present inventors believe that this increase is due to the presence of the Au nanoparticles at the interface, which reduced the energy barrier and enhanced the holes collection. Using the aerosol-jet printed MXene:AuNP as the top anode electrode in OPV devices may enable the suppression of HTL and may simplify the organic semiconductor device manufacturing process. Deposited from an aqueous solution, in an ambient environment without post-deposition processing, printed MXenes, and in particular those which are aerosol-printed, are a suitable and desirable electrode material for printed electronic devices.

[0059] In one specific example, tetrachloroauric acid (HAuCI4 -3H2O) (0.667 mM) was prepared and heated to 60°C while stirring at 300 rpm in order to form or synthesize gold nanoparticles for forming the composite MXene material. An aqueous sodium chloride solution was added such that the final concentration of NaCI was 3 mM before heating to 100°C while stirring at 300 rpm for 3 minutes. Typically, the gold nanoparticles are of size 1 nm to 100 nm and of concentration 0.1 % to 10%. Concentrated AuNPs dispersed in DI water were combined with 25 mg / ml MXene and vortexed before transfer into a vial for aersol-jet printing in ultrasonic mode. A 0.65 urn wide nozzle was selected for the printing process and the platen was heated to 70°C with the printing speed of 5 mm / sec.

[0060] An example device implementing a semiconductor with the composite MXene electrode was fabricated as a gas sensor made with pre-patterned Au electrodes on Si / SiO2 substrate with aerosol-jet printed MXene or MXene:AuNP between Au electrodes. To compare against conventional semiconductor device constructions, the sample device with the MXene:AuNPelectrode and other OPV devices were prepared on pre-patterned ITO coated glass substrates, with sheet resistance of 12 ohm / sq and a thickness of 130 nm. ITO-substrates were cleaned with detergent and rinsed with Acetone and IPAfor the cleaning, followed by the UV-Ozone treatment. ZnO nanoparticle synthesis is reported in our previous publication and spin coated at 5000 rpm on ITO surface. For the device exemplifying the present invention, polymer semiconductor of PM6 and Y6 as shown in FIG. 6 and concentrated in chloroform was spin-coated at RT and annealed at 110 °C for 10 min. Evaporated MoOx or spin-coated Vox were applied.

[0061] Thus, in specific examples to demonstrate the invention, Ti3C2TxMXene and TisC2TxMXene:AuNP films were aerosol-jet printed in ultrasonic mode with optimal gas pressure across prepatterned gold electrodes on Si / SiC>2 substrates. The different thickness was tuned by the number of printing passes with the printing speed of 0.5 mm / sec with the optimal sheath air pressure of 0.4 PSI and the push air pressure of 2.0 PSI with the nozzle size of 0.65 mm. Optical microscope images of the edges of the printed area revealed some dewetting occurred during the printing process (FIG. 8A-8B) while scanning electron microscopy (SEM) showed a loose distribution of MXene flakes and a uniform distribution of AuNPs (FIGS. 8C-8F).

[0062] The present inventors investigated the electrical properties of the aerosol jet printed TisC2TxMXene and TisC2TxMXene:AuNP films using a probe station with Keithley SourceMeter. The addition of the AuNPs resulted in increased conductivity which may be due to an increase in charge carrier density within the TisC2TxMXene:AuNP films. The conductivity of both TisC2TxMXene and TisC2TxMXene:AuNP films increased with layer thickness (FIG. 9C). However, when exposed to ambient air for an extended period, such as 21 days, the conductivity of TisC2TxMXene film decreased by over 80%, while the conductivity of TisC2TxMXene:AuNP only decreased by 30%. Oxidation of Ti atoms at defect sites and the formation of TiO2 clusters will causes the degradation of conductivity. The present inventors also observed faster degradation in printed thin films, with and without AuNPs, compared to thick films (FIG. 9B), suggesting that the relative number of defect sites may interact with AuNPs and prevent the oxidation and degradation. However, if kept in a dry nitrogen environment for a corresponding duration, in this case 21 days, no significant changes in conductivity were observed in either MXene or MXene:AuNP films, thereby confirming the oxidative degradation process takes place in air. Further, the present inventors observed that the films printed by aerosol-jet printing degrade faster in air than reported MXenes films (without AuNP) deposited by other techniques. This is believed to be due to an increased contact area with air because of distinct porous microstructures produced by aerosol-jet printing. In addition, increasing operating temperature may induce anincrease in conductivity for both TisC2TxMXene and TisC2TxMXene:AuNP films, with a lesser effect on MXene:AuNP films. Interestingly, after heating the films to 120°C and cooling, the conductivity remained 15-20% higher than the initial value, suggesting a mild thermal annealing effect. The TisC2TxMXene:AuNP films exhibit an enhanced environmental stability, which may suggest that the AuNPs preferentially interact with atmospheric humidity or limit the formation of TiC>2 clusters.

[0063] The present inventors also investigated the response of aerosol-jet printed conductive films to ammonia. MXene and MXene:AuNP films were printed on Si / SiC>2 wafers with prepatterned gold electrodes and tested as resistors in a sealed dry-air chamber. Ammonia gas was supplied to the chamber, and the changes in conductivity of resistors were measured over time. The present inventors found that the aerosol-jet printed films were substantially more sensitive to ammonia than previously reported TisC2TxMXene films. This may support the notion of a highly porous nature of aerosol-jet printed films. The presence of gold nanoparticles within the film may enhance the sensitivity of films to ammonia, resulting in a faster rate of response and recovery for the TisC2TxMXene:AuNP films.

[0064] The present inventors demonstrated that MXene can be used as the top electrode for fabrication of a semiconductor for a OPV. The mixture of MXene with Au nanoparticles shows better performance due to the energy level engineered by the Au nanoparticle, which increases open-circuit voltage. The presence of Au nanoparticles may also increase the charge collection efficiency at the interface with the semiconductor layer, which results in an enhancement of the fill factor of the OPV device.

[0065] More specifically, the power conversion efficiency of 8.8% using the aerosol-jet-printed composite MXene / Au-nanoparticle material instead of MoOx / Ag in OPV devices. Open-circuit voltage and fill factor are increased in devices using MXene / Au-NP as the top electrode compared with devices using MXene only. Without the metal oxide layer, evaporated Ag devices are shorted, whereas the printed MXene or MXene / Au-NP devices are both functional. Although the evaporated Ag with metal oxide interlayer devices shows higher performance compared to MXene devices, it uses vacuum deposition, which is generally a more expensive manufacturing technique.

[0066] Thus, an aspect of the invention is to use a composite of MXene with Au nanoparticles as a top printed electrode to replace the bilayer HTL / anode in organic devices such as OPVs and OLEDs.

[0067] This arrangement may simplify the manufacturing process of printed organic devices, such as photovoltaics (OPV, perovskite) and OLED technologies or other multilayer printable electronics, and may reduce the cost of manufacturing.

[0068] As described hereinbefore, but in other words, the present inventors disclose the nanocomposite MXene:AuNP as a conductive material for the fabrication of an anode of a semiconductor device for use in organic electronics, such as gas sensors and OPV devices. Typically, such nanocomposite material is deposited during fabrication by printing, for example, aerosol jet printing. MXene:AuNPs films, especially when aerosol-jet-printed, reveal enhanced conductivity, stability, and sensitivity, with over 110% IA / IO response to ammonia. The present inventors also demonstrated printed MXene:AuNPs can be used as an anode without a HTL in semiconductor device construction. In one example, a power conversion efficiency of 8.8% was achieved when using PM6:Y6 as the organic bulk heterojunction material in an active or functional layer in inverted OPV structure. This stems from a relatively low work function of the MXene:AuNP composite material. Thus, the combination of ambient solution printing and the elimination of HTL could simplify the manufacturing process of OPVs and enhance the manufacturing yield.

[0069] As described hereinbefore, the present invention relates to a semiconductor device for electronics which comprises an anode of a composite MXene material with gold nanoparticles. Also, a related method of forming a semiconductor device comprises providing an anode by printing an ink comprising a composite MXene with gold nanoparticles.

[0070] While the aspects of the present embodiments are illustrated and described as having a certain arrangement of aspects and features, it is understood that any suitable arrangement can be used that retains the functions described with respect to the present embodiments.

[0071] Although the foregoing has been described with reference to certain specific embodiments, various modifications thereto will be apparent to those skilled in the art without departing from the spirit and scope of the invention as outlined in the appended claims.

Claims

Claims:

1. A semiconductor device comprising: a substrate; a cathode supported by the substrate; an anode supported by the substrate and facing the cathode; an electron transport layer provided between the cathode and the anode and in contact with the cathode; and a functional layer associated with a function of the semiconductor device and comprising semiconductor material, the functional layer being provided between the electron transport layer and the anode and in contact with the electron transport layer; wherein the anode comprises a composite MXene material with gold nanoparticles.

2. The semiconductor device of claim 1 wherein the anode comprising the MXene with the gold nanoparticles is in contact with the functional layer.

3. The semiconductor device of claim 1 or 2 wherein the cathode is provided in contact with the substrate and the anode is in opposed relation thereto.

4. The semiconductor device of any one of claims 1 to 3 wherein the functional layer is one of an emitting layer and an absorbing layer.

5. The semiconductor device of any one of claims 1 to 4 wherein the functional layer comprises at least one of bulk heterojunction material, perovskite material and quantum dots.

6. A method for forming a semiconductor device, comprising: providing a substrate; providing a cathode to be supported by the substrate; providing an anode to be supported by the substrate and facing the cathode; providing an electron transport layer between the cathode and the anode and in contact with the cathode; providing a functional layer associated with a function of the semiconductor device and comprising semiconductor material, the functional layer being provided between the electron transport layer and the anode and in contact with the electron transport layer; wherein providing the anode comprises printing an ink comprising a composite MXene material with gold nanoparticles.

7. The method of claim 6 wherein the ink is printed onto the functional layer such that the anode is provided in contact therewith.

8. The method of claim 6 or 7 wherein the cathode is provided in contact with the substrate and the anode is in opposed relation thereto.

9. The method of any one of claims 6 to 8 wherein the functional layer is one of an emitting layer and an absorbing layer.

10. The method of any one of claims 6 to 9 wherein the functional layer comprises at least one of bulk heterojunction material, perovskite material and quantum dots.11 . Use of a composite conductive material essentially comprising MXene and gold nanoparticles as an anode in a semiconductor device.

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