Film formation device and film formation method

Abstract

A film formation device according to one embodiment of the present disclosure comprises: a processing container the inside of which can be depressurized; a shower head that supplies a gas into the processing container; and a pressure sensor. The shower head includes a lower member in which a plurality of gas holes are formed, and an upper member that forms a diffusion space for diffusing the gas between the upper member and the lower member. The pressure sensor is provided inside the upper member, with a pressure sensing surface thereof being exposed to the diffusion space.

Description

Film Forming Apparatus and Film Forming Method

[0001] The present disclosure relates to a film forming apparatus and a film forming method.

[0002] A technique is disclosed in which a pressure sensor and a measurement target space are connected by a tubular member, and the pressure of the measurement target space is indirectly measured by the pressure sensor.

[0003] Japanese Patent Application Laid-Open No. 2023-173097, Japanese Patent No. 7386738, Japanese Patent Application Laid-Open No. 2022-89151

[0004] The present disclosure provides a technique capable of measuring the pressure in the diffusion space with high accuracy.

[0005] A film forming apparatus according to an aspect of the present disclosure includes a processing container whose interior can be depressurized, a shower head that supplies gas into the processing container, and a pressure sensor. The shower head includes a lower member in which a plurality of gas holes are formed, and an upper member that forms a diffusion space for diffusing the gas between the lower member. The pressure sensor is provided inside the upper member, and a pressure sensing surface is exposed to the diffusion space.

[0006] According to the present disclosure, the pressure in the diffusion space can be measured with high accuracy.

[0007] It is a cross-sectional view showing a film forming apparatus according to an embodiment. It is a cross-sectional view showing a shower head of the film forming apparatus of FIG. 1. It is a perspective view showing a shower head of the film forming apparatus of FIG. 1. It is a view of the shower head of the film forming apparatus of FIG. 1 seen from below. It is a cross-sectional view (part 1) showing a pressure measurement part of the film forming apparatus of FIG. 1. It is a cross-sectional view (part 2) showing a pressure measurement part of the film forming apparatus of FIG. 1. It is a view showing a film forming method according to an embodiment.

[0008] Hereinafter, non-limiting exemplary embodiments of the present disclosure will be described with reference to the accompanying drawings. In all the accompanying drawings, the same or corresponding members or components are denoted by the same or corresponding reference numerals, and duplicate descriptions are omitted.

[0009] [Film Deposition Apparatus] A film deposition apparatus 100 according to an embodiment will be described with reference to Figures 1 to 4. Figure 1 is a cross-sectional view showing the film deposition apparatus 100 according to an embodiment. Figure 2 is a cross-sectional view showing the shower head 3 of the film deposition apparatus 100 in Figure 1. Figure 3 is a perspective view showing the shower head 3 of the film deposition apparatus 100 in Figure 1. Figure 4 is a view of the shower head 3 of the film deposition apparatus 100 in Figure 1 from below.

[0010] The film deposition apparatus 100 is configured as an apparatus capable of performing film deposition by atomic layer deposition (ALD). The film deposition apparatus 100 comprises a processing container 1, a mounting table 2, a shower head 3, a gas supply unit 4, a gas introduction unit 5, an exhaust unit 6, a pressure measuring unit 7, and a control circuit 9.

[0011] The processing container 1 is a vacuum container whose interior can be depressurized. The processing container 1 is made of a metal material such as aluminum. The processing container 1 has a substantially cylindrical shape. The processing container 1 houses a substrate W. The substrate W is, for example, a semiconductor wafer. An inlet / outlet 11 for loading or unloading the substrate W is provided on the side wall of the processing container 1. The inlet / outlet 11 is opened and closed by a gate valve 12. An annular exhaust duct 13 with a rectangular cross-section is provided on the main body of the processing container 1. A slit 13a is provided along the inner circumference of the exhaust duct 13. An exhaust port 13b is provided on the outer wall of the exhaust duct 13. A top plate 14 is provided on the upper surface of the exhaust duct 13 so as to close the upper opening of the processing container 1. The space between the exhaust duct 13 and the top plate 14 is airtightly sealed with a sealing member 15. The sealing member 15 is, for example, an O-ring.

[0012] The mounting table 2 horizontally supports the substrate W within the processing container 1. The mounting table 2 has a disc shape that is larger than the substrate W. The mounting table 2 is made of a ceramic material such as aluminum nitride or a metallic material such as aluminum or nickel alloy. A heater 21 for heating the substrate W is embedded inside the mounting table 2. The heater 21 is powered by a heater power supply (not shown) and generates heat. The output of the heater 21 is controlled by the temperature signal of a thermocouple (not shown) provided near the upper surface of the mounting table 2, thereby controlling the substrate W to a predetermined temperature. The mounting table 2 is provided with a cover member 22 made of ceramic such as alumina so as to cover the outer peripheral region of the upper surface and the sides.

[0013] The mounting platform 2 is supported by a support member 23. The support member 23 extends from the center of the bottom surface of the mounting platform 2, through a hole formed in the bottom wall of the processing container 1, and downwards to the processing container 1, with its lower end connected to a lifting mechanism 24. The mounting platform 2 is raised and lowered by the lifting mechanism 24 between the processing position shown in Figure 1 and the transport position shown by the dashed line below it, where the substrate W can be transported. A flange portion 25 is attached to the lower part of the support member 23 below the processing container 1. A bellows 26 is provided between the bottom surface of the processing container 1 and the flange portion 25. The bellows 26 partitions the atmosphere inside the processing container 1 from the outside air. The bellows 26 expands and contracts in conjunction with the raising and lowering movement of the mounting platform 2.

[0014] Three support pins (only two are shown) are provided near the bottom of the processing container 1, protruding upward from the lifting plate 29. The support pins 27 are raised and lowered via the lifting plate 29 by a lifting mechanism 28 located below the processing container 1. The support pins 27 are inserted through holes 2a provided in the mounting table 2 at the transport position and can be extended and retracted relative to the upper surface of the mounting table 2. By raising and lowering the support pins 27, the substrate W is transferred between the transport robot (not shown) and the mounting table 2.

[0015] The showerhead 3 supplies gas into the processing container 1 in a shower-like manner. The showerhead 3 is made of, for example, a metal material. The showerhead 3 is positioned opposite the mounting base 2. The showerhead 3 has approximately the same diameter as the mounting base 2. The showerhead 3 includes an upper member 31 and a lower member 32. The upper member 31 is fixed to the lower surface of the top plate 14. The lower member 32 is connected below the upper member 31. A diffusion space 33 for diffusing gas is formed between the upper member 31 and the lower member 32. A gas introduction passage 36 is provided inside the top plate 14 and inside the upper member 31. The gas introduction passage 36 guides the gas introduced from the gas introduction section 5 to the gas supply section 4. An annular projection 34 protruding downward is provided on the periphery of the lower member 32. A plurality of gas holes 35 are provided on the flat surface inside the annular projection 34 of the lower member 32. When the mounting table 2 is moved to the processing position, a narrow processing space 37 is formed between the mounting table 2 and the lower member 32, and the upper surface of the cover member 22 and the annular projection 34 come into close proximity to form an annular gap 38.

[0016] Multiple gas supply units 4 (for example, nine) are provided within the diffusion space 33. One gas supply unit 4 is positioned at the center of the shower head 3. The eight gas supply units 4 are arranged in a circular pattern around the center of the shower head 3 at equal intervals. The number and arrangement of the gas supply units 4 are not limited to the illustrated example. Multiple gas outlets 4a are provided on the side of each gas supply unit 4. The multiple gas outlets 4a are provided at intervals along the circumferential direction of each gas supply unit 4. Preferably, each gas supply unit 4 has three or more gas outlets 4a; in this example, twelve are provided. The bottom surface of each gas supply unit 4 is closed and does not have a gas outlet 4a. Therefore, the gas that flows into each gas supply unit 4 is discharged so as to spread uniformly laterally from each gas outlet 4a, as shown in Figure 4. The gas discharged from the gas outlet 4a of each gas supply unit 4 spreads sufficiently within the shower head 3 before being supplied to the processing space 37 via the gas holes 35. This ensures that gas is uniformly supplied to the surface of the substrate W on the mounting base 2.

[0017] The gas inlet section 5 supplies various gases to the showerhead 3. The gas inlet section 5 includes a raw material gas supply section 51, a first purge gas supply section 52, a nitride gas supply section 53, a second purge gas supply section 54, and an inlet block 55.

[0018] The raw material gas supply unit 51 includes a raw material gas source 51S. The raw material gas source 51S is supplied to the processing container 1 via a gas supply line 51L, and is an example of a raw material gas, titanium chloride (TiCl ４ ) Gas is supplied. The gas supply line 51L is a line extending from the raw material gas source 51S. The gas supply line 51L is connected to the inlet block 55. The gas supply line 51L is equipped with a flow controller 51M, a storage tank 51T, and a valve 51V in order from the raw material gas source 51S side. The flow controller 51M controls the flow rate of titanium chloride gas flowing through the gas supply line 51L. The flow controller 51M is, for example, a mass flow controller (MFC). The storage tank 51T temporarily stores the titanium chloride gas. By providing the storage tank 51T, a large flow rate of titanium chloride gas can be supplied into the processing container 1 in a short time. The storage tank 51T is also called a buffer tank or fill tank. The valve 51V is a valve for switching the supply and stop of gas during atomic layer deposition. The valve 51V is, for example, an ALD valve that can be opened and closed at high speed. It is preferable that the ALD valve can be opened and closed at intervals of 0.01 seconds to 1.0 second.

[0019] The first purge gas supply unit 52 includes a purge gas source 52S. The purge gas source 52S provides nitrogen (N) as an example of a purge gas to the processing container 1 via the gas supply line 52L. ２) Gas is supplied. The gas supply line 52L is a line extending from the purge gas source 52S. The gas supply line 52L is connected to the gas supply line 51L. The gas supply line 52L is provided with a flow controller 52M and a valve 52V in order from the purge gas source 52S side. The flow controller 52M controls the flow rate of nitrogen gas flowing through the gas supply line 52L. The flow controller 52M is, for example, a mass flow controller. The valve 52V is a valve for switching the supply and stop of gas during atomic layer deposition. The valve 52V is, for example, an ALD valve that can be opened and closed at high speed. It is preferable that the ALD valve can be opened and closed at intervals of 0.01 seconds to 1.0 second.

[0020] The nitriding gas supply unit 53 includes a nitriding gas source 53S. The nitriding gas source 53S is supplied to the processing container 1 via a gas supply line 53L, and an example of a nitriding gas is ammonia (NH₃). ３ ) Gas is supplied. The gas supply line 53L is a line extending from the nitride gas source 53S. The gas supply line 53L is connected to the inlet block 55. The gas supply line 53L is equipped with a flow controller 53M, a storage tank 53T, and a valve 53V in order from the nitride gas source 53S side. The flow controller 53M controls the flow rate of ammonia gas flowing through the gas supply line 53L. The flow controller 53M is, for example, a mass flow controller. The storage tank 53T temporarily stores the ammonia gas. By providing the storage tank 53T, a large flow rate of ammonia gas can be supplied into the processing container 1 in a short time. The storage tank 53T is also called a buffer tank or fill tank. The valve 53V is a valve for switching the supply and stop of gas during atomic layer deposition. The valve 53V is, for example, an ALD valve that can be opened and closed at high speed. It is preferable that the ALD valve can be opened and closed at intervals of 0.01 seconds to 1.0 second.

[0021] The second purge gas supply unit 54 includes a purge gas source 54S. The purge gas source 54S supplies nitrogen gas, an example of a purge gas, into the processing container 1 via a gas supply line 54L. The gas supply line 54L is a line extending from the purge gas source 54S. The gas supply line 54L is connected to the gas supply line 53L. The gas supply line 54L is provided with a flow controller 54M and a valve 54V in that order, starting from the purge gas source 54S side. The flow controller 54M controls the flow rate of nitrogen gas flowing through the gas supply line 54L. The flow controller 54M is, for example, a mass flow controller. The valve 54V is a valve for switching the supply and stop of gas during atomic layer deposition. The valve 54V is, for example, an ALD valve that can be opened and closed at high speed. It is preferable that the ALD valve can be opened and closed at intervals of 0.01 seconds to 1.0 seconds.

[0022] The inlet block 55 has a hollow cylindrical shape. The inlet block 55 is installed on the top plate 14. The inlet block 55 is positioned in the center of the top plate 14. A gas passage 55a is provided inside the inlet block 55. The gas passage 55a is in communication with the gas supply lines 51L and 53L and the gas introduction passage 36, and supplies gas from the gas supply lines 51L and 53L to the gas introduction passage 36.

[0023] The exhaust unit 6 reduces the pressure inside the processing container 1 by exhausting the inside of the processing container 1. The exhaust unit 6 includes an exhaust pipe 61, a pressure controller 62, and a vacuum pump 63. The exhaust pipe 61 is connected to the exhaust port 13b. The pressure controller 62 is provided in the exhaust pipe 61. The pressure controller 62 may be a valve that controls the conductance in the exhaust pipe 61 by adjusting its opening degree, for example. The vacuum pump 63 is interposed in the exhaust pipe 61.

[0024] The pressure measuring unit 7 is located inside the upper member 31. The pressure sensing surface of the pressure measuring unit 7 is exposed to the diffusion space 33. The pressure measuring unit 7 measures the pressure in the diffusion space 33. The pressure measuring unit 7 is located away from the center of the shower head 3. In this case, the pressure measuring unit 7 can be positioned so as not to obstruct the gas introduction passage 36. The pressure measuring unit 7 may be located further from the center of the shower head 3 than the gas introduction passage 36. Details of the pressure measuring unit 7 will be described later.

[0025] The control circuit 9 is an electronic circuit such as a CPU (Central Processing Unit), FPGA (Field Programmable Gate Array), or ASIC (Application Specific Integrated Circuit). The control circuit 9 performs the various control operations described in this specification by executing instruction codes stored in memory or by being designed as a circuit for special applications.

[0026] The pressure measuring section 7 will be described with reference to Figures 5 and 6. Figures 5 and 6 are cross-sectional views showing the pressure measuring section 7 of the film deposition apparatus 100 in Figure 1. Figure 5 shows a cross-section including the screw 715, and Figure 6 shows a cross-section including the screw 734.

[0027] As shown in Figures 5 and 6, the upper member 31 has a first recess 311, a second recess 312, and a through hole 313.

[0028] The first recess 311 is provided at a position away from the center of the upper member 31. The first recess 311 has a side surface 311s and a bottom surface 311b. The bottom surface 311b is continuous with the side surface 311s. In plan view, the outer shape of the first recess 311 is circular or other polygonal.

[0029] The second recess 312 is provided in the bottom surface 311b of the first recess 311. The second recess 312 has a side surface 312s and a bottom surface 312b. The side surface 312s is connected to the bottom surface 311b at its upper end and to the bottom surface 312b at its lower end. In plan view, the outer shape of the second recess 312 is circular or other polygonal. The inner diameter of the second recess 312 is smaller than the inner diameter of the first recess 311.

[0030] The through hole 313 is provided in the bottom surface 312b of the second recess 312. The through hole 313 has a side surface 313s. The side surface 313s is connected to the bottom surface 312b at its upper end. The through hole 313 has a cylindrical shape. The inner diameter of the through hole 313 is smaller than the inner diameter of the second recess 312.

[0031] The pressure measuring unit 7 includes a pressure sensor 71, a first sealing member 72, a sealing gas supply unit 73, a second sealing member 74, and a third sealing member 75.

[0032] The pressure sensor 71 is, for example, a capacitance manometer. The pressure sensor 71 includes a body 711, a flange 712, a diaphragm 713, a cable 714, and a screw 715.

[0033] The main body 711 is installed inside the through hole 313. The main body 711 has a cylindrical shape. The outer surface of the main body 711 faces the side surface 313s of the through hole 313.

[0034] The flange 712 is provided at the upper end of the main body 711. The lower surface 712b of the flange 712 faces the bottom surface 312b of the second recess 312. A screw hole 712h is formed in the flange 712, and the flange 712 is fastened to the upper member 31 by screwing a screw 715 into the screw hole 712h and a screw hole formed in the second recess 312 of the upper member 31. Multiple screws 715 (for example, three) may be provided at intervals in the circumferential direction.

[0035] The diaphragm 713 is provided at the lower end of the main body 711. The diaphragm 713 is an example of a pressure sensing surface. The lower surface 713b of the diaphragm 713 is exposed to the diffusion space 33. The lower surface 713b of the diaphragm 713 may be located within the diffusion space 33. The lower surface 713b of the diaphragm 713 may be parallel to the lower surface 31b of the upper member 31. The difference in height between the lower surface 713b of the diaphragm 713 and the lower surface 31b of the upper member 31 is, for example, 5 mm or less. In this case, the pressure measuring unit 7 can be attached to the upper member 31 without changing the volume of the diffusion space 33. This reduces the impact on substrate processing. The pressure sensor 71 may be provided such that the lower surface 713b of the diaphragm 713 is on the same plane as the lower surface 31b of the upper member 31.

[0036] The lower end of the cable 714 is connected to the main body 711, and the upper end passes through the seal block 731 and the top plate 14 and is pulled out to the outside of the processing container 1.

[0037] The first sealing member 72 seals the gap between the lower surface 712b of the flange 712 and the bottom surface 312b of the second recess 312, preventing air from flowing from the external space of the processing container 1 into the diffusion space 33. The first sealing member 72 is, for example, an O-ring.

[0038] The seal gas supply unit 73 includes a seal block 731, a seal gas supply pipe 732, a seal gas discharge pipe 733, and a screw 734.

[0039] The seal block 731 is provided inside the first recess 311. The lower surface 731b of the seal block 731 faces the upper surface 712u of the flange 712 and the bottom surface 311b of the first recess 311. A screw hole 731h is formed in the seal block 731, and the seal block 731 is fastened to the flange 712 by screwing a screw 734 into the screw hole 731h and a screw hole formed in the flange 712. Multiple screws 734 (for example, four) may be provided at intervals in the circumferential direction. A through hole 731t for inserting the cable 714 is provided in the center of the seal block 731. A seal gas supply channel 731i and a seal gas discharge channel 731o are provided inside the seal block 731.

[0040] The seal gas supply pipe 732 has its lower end connected to the seal gas supply flow path 731i and its upper end penetrating through the top plate 14 and drawn out to the outside of the processing container 1. The seal gas supply pipe 732 supplies seal gas to the seal gas supply flow path 731i. The seal gas is, for example, nitrogen gas.

[0041] The seal gas discharge pipe 733 has its lower end connected to the seal gas discharge flow path 731o and its upper end penetrating through the top plate 14 and drawn out to the outside of the processing container 1. The seal gas discharge pipe 733 discharges seal gas from the seal gas discharge flow path 731o.

[0042] The second seal member 74 seals the gap between the lower surface 731b of the seal block 731 and the upper surface 712u of the flange 712. The second seal member 74 is, for example, an O-ring.

[0043] The third seal member 75 seals the gap between the lower surface 731b of the seal block 731 and the bottom surface 311b of the first recess 311. The third seal member 75 is, for example, an O-ring.

[0044] The seal gas supplied from the seal gas supply pipe 732 to the seal gas supply flow path 731i is supplied to a space 76 formed by the upper member 31, the pressure sensor 71, and the first seal member 72 and separated from the diffusion space 33 by the first seal member 72. The seal gas supplied to the space 76 is discharged from the seal gas discharge pipe 733 through the seal gas discharge flow path 731o. Thus, the inflow of air from the outside of the processing container 1 into the diffusion space 33 can be particularly reduced by the seal gas supplied to the space 76.

[0045] As described above, according to the film forming apparatus 100 according to the embodiment, the pressure sensor 71 is provided inside the upper member 31, and the diaphragm 713 is exposed to the diffusion space 33. In this case, since the pressure sensor 71 can directly measure the pressure in the diffusion space 33, the pressure in the diffusion space 33 can be measured with a high response speed and high accuracy.

[0046] Further, according to the film forming apparatus 100 according to the embodiment, no dead space occurs between the diffusion space 33 and the diaphragm 713. In this case, gas stagnation due to providing the pressure sensor 71 is unlikely to occur. Therefore, there is almost no film deposition on the diaphragm 713 due to gas stagnation. As a result, drift of the zero point of the output of the pressure sensor 71 is unlikely to occur.

[0047] Further, according to the film forming apparatus 100 according to the embodiment, since the pressure in the diffusion space 33 can be measured with high accuracy, a slight deviation (for example, a deviation of 10 μm to 100 μm) in the gap between the mounting table 2 and the shower head 3 can be detected based on the pressure detected by the pressure sensor 71.

[0048] [Film Forming Method] Referring to FIG. 7, the film forming method according to the embodiment will be described. FIG. 7 is a diagram showing the film forming method according to the embodiment. The film forming method according to the embodiment is carried out under the control of the control circuit 9.

[0049] First, the substrate W is carried into the processing container 1. Specifically, with the mounting table 2 lowered to the transfer position, the gate valve 12 is opened, and the substrate W is carried into the processing container 1 by a transfer robot (not shown) through the carry-in outlet 11 and placed on the mounting table 2 heated to a predetermined temperature by the heater 21. Subsequently, the mounting table 2 is raised to the processing position, and the inside of the processing container 1 is decompressed to a predetermined pressure.

[0050] Next, a series of operations including an adsorption step, a first purge step, a nitriding step, and a second purge step are defined as one cycle, and a titanium nitride (TiN) film with a desired film thickness is formed by controlling the number of cycles.

[0051] In the adsorption step, titanium chloride gas is supplied to the processing space 37. Specifically, first, by opening valves 52V and 54V, nitrogen gas is supplied from purge gas sources 52S and 54S via gas supply lines 52L and 54L. Also, by opening valve 51V, titanium chloride gas is supplied to the processing space 37 from raw material gas source 51S via gas supply line 51L. At this time, the titanium chloride gas is temporarily stored in storage tank 51T before being supplied into the processing container 1. In the adsorption step, the control circuit 9 controls the pressure controller 62 based on the measurement value of the pressure sensor 71 to adjust the pressure inside the processing space 37 to the desired level.

[0052] In the first purging step, titanium chloride gas and other substances remaining in the processing space 37 are purged. Specifically, while the supply of nitrogen gas from gas supply lines 52L and 54L continues, the valve 51V is closed to stop the supply of titanium chloride gas from gas supply line 51L.

[0053] In the nitriding step, ammonia gas is supplied to the processing space 37. Specifically, while the supply of nitrogen gas from gas supply lines 52L and 54L continues, valve 53V is opened to supply ammonia gas from the nitriding gas source 53S to the processing space 37 via gas supply line 53L. At this time, the ammonia gas is temporarily stored in storage tank 53T before being supplied into the processing container 1. When ammonia gas is supplied into the processing container 1, the titanium chloride gas adsorbed on the substrate W is reduced. The flow rate of the ammonia gas may be sufficient to cause a reduction reaction. In the nitriding step, the control circuit 9 controls the pressure controller 62 based on the measurement value of the pressure sensor 71 to adjust the pressure in the processing space 37 to the desired level.

[0054] The second purging step involves purging any remaining ammonia gas in the processing space 37. Specifically, while continuing to supply nitrogen gas from gas supply lines 52L and 54L, valve 53V is closed to stop the supply of ammonia gas from gas supply line 53L.

[0055] The series of operations including the adsorption step, first purging step, nitriding step, and second purging step described above constitutes one cycle, and by controlling the number of cycles, a titanium nitride film of a desired thickness can be formed.

[0056] Next, the substrate W is removed from the processing container 1. Specifically, with the mounting table 2 lowered to the transport position, the gate valve 12 is opened, and a transport robot (not shown) holds the substrate W and transports it out of the processing container 1 through the input / output port 11.

[0057] This completes the processing for one substrate W.

[0058] The embodiments disclosed herein should be considered in all respects to be illustrative and not restrictive. The above embodiments may be omitted, replaced, or modified in various ways without departing from the scope and spirit of the appended claims.

[0059] In the above embodiment, the case in which the pressure measuring unit 7 is located away from the center of the shower head 3 was described, but this disclosure is not limited thereto. For example, the pressure measuring unit 7 may be located at the center of the shower head 3. For example, the pressure measuring unit 7 may be located at multiple positions within the plane of the shower head 3. This makes it possible to measure the pressure distribution within the plane of the substrate W.

[0060] The above embodiment describes an apparatus for depositing a titanium nitride film by alternately supplying titanium chloride gas and ammonia gas, but the disclosure is not limited thereto. For example, the disclosure can also be applied to apparatuses that deposit other films using other gases.

[0061] This international application claims priority based on Japanese Patent Application No. 2024-185766, filed on 22 October 2024, and the entire contents of said application are incorporated herein by reference.

[0062] 100 Film deposition apparatus 1 Processing container 3 Shower head 31 Upper member 32 Lower member 33 Diffusion space 35 Gas hole 71 Pressure sensor 713 Diaphragm

Claims

1. A film deposition apparatus comprising: a processing container capable of reducing the internal pressure; a shower head for supplying gas into the processing container; and a pressure sensor, wherein the shower head includes a lower member having a plurality of gas holes and an upper member forming a diffusion space between itself and the lower member for diffusing the gas, and the pressure sensor is provided inside the upper member with its pressure sensing surface exposed to the diffusion space.

2. The film deposition apparatus according to claim 1, wherein the difference between the height of the pressure sensing surface of the pressure sensor and the height of the lower surface of the upper member is 5 mm or less.

3. The film-forming apparatus according to claim 1, wherein the pressure sensor is provided such that the pressure sensing surface is flush with the lower surface of the upper member.

4. The film-forming apparatus according to claim 1, wherein the pressure sensor is provided at a position away from the center of the shower head.

5. A film deposition apparatus according to any one of claims 1 to 4, comprising: a sealing member for sealing the gap between the upper member and the pressure sensor; a sealing gas supply channel formed by the upper member, the pressure sensor and the sealing member, for supplying sealing gas to a space separated from the diffusion space by the sealing member; and a sealing gas discharge channel for discharging the sealing gas supplied to the space.

6. A film deposition method in a film deposition apparatus comprising a processing container capable of reducing the internal pressure, a shower head for supplying gas into the processing container, and a pressure sensor, wherein the shower head includes a lower member having a plurality of gas holes and an upper member forming a diffusion space between itself and the lower member for diffusing the gas, the pressure sensor is provided inside the upper member with a pressure sensing surface exposed to the diffusion space, and the pressure inside the processing container is adjusted based on the measurement value of the pressure sensor.

Images