Thyristor TRIZ Cases
- Flip Chip Substrate Guard Rings for Stress Relief
Corner guard rings reduce thermal stress between die and substrate, preventing cracking during packaging.
- SOI Fast Recovery Diode Lateral Structure
Segmented anode regions on SOI substrate reduce reverse recovery time while maintaining voltage endurance.
- Bipolar Power Device Junction Termination
- Retractable Guiding Member for Substrate Positioning and Tape Application
Dynamic positioning pins resolve the conflict between accurate substrate alignment and tape application interference.
- Series Thyristor Gate Merging for Overvoltage Protection
A sequence of series thyristors shares a single control gate to increase holding voltage while maintaining trigger levels.
- Symmetrical Silicon Controlled Rectifier for Bi-Directional ESD Protection
A symmetrical silicon controlled rectifier structure enables bi-directional electrostatic discharge current paths.
- Semiconductor Device Protruding Collector Region
Protruding p-type collector regions enhance hole injection speed, reducing switching loss in RC-IGBTs.
- IGBT Convex Region Design for Latch-up and On-Voltage Trade-off
A semiconductor device uses a convex region in the drift layer to minimize serial resistance between emitter and collector contacts.
- VDMOSFET Trench Gate Impurity Regions for Avalanche Hole Drainage
Isolated impurity regions redirect avalanche-generated holes away from the body region, preventing parasitic NPN transistor turn-on and device breakdown.
- Thyristor Rectifier Surge Protection via NTC Resistor
An NTC resistor limits surge current during thyristor turn-on, preventing di/dt damage while maintaining normal operation.
- ESD Protection Apparatus with Epitaxial Layer Doping
Epitaxial material with lower doping concentration increases resistance and carrier mobility, reducing trigger voltage of the parasitic SCR device.
- Lateral Diode Vertical SCR Hybrid ESD Protection
A lateral diode triggers a vertical SCR to shunt current and reduce voltage.
- Superjunction Semiconductor Peripheral Region Structure
A superjunction semiconductor device integrates p-type partition regions with n-type surface regions and conductive field plates.
- IGBT Emitter Electrode Metal Silicide Contact
Metal silicide layers on lowly doped IGBT emitters reduce contact resistance and prevent leakage issues.
- Trench Separation Diffusion for High Voltage Semiconductor Edge Termination
Bidirectional P-type dopant diffusion into trench sidewalls reduces processing time while maintaining high reverse blocking voltage reliability.
- Tunable Rise-Time Control for Avalanche Photodiode Detection Modes
Dynamic rise-time adjustment enables avalanche photodiodes to operate in gated and free-running modes, reducing overshoot and improving detection efficiency.