This invention discloses a
semiconductor device, a fabrication method, a
power module, a conversion circuit, and a vehicle. The
semiconductor device includes: a
semiconductor body comprising a well region and a first region; the first region being configured with a first
conductivity type and located on a first surface, and the well region being configured with a second
conductivity type and located on the side of the first region away from the first surface; the first surface having at least two trenches arranged at intervals; and at least one third region and at least one fourth region, both of the second
conductivity type, and respectively located on the side of different trenches near the second surface; the distance from the third region to its corresponding trench is greater than the distance from the fourth region to its corresponding trench, and the distance between the third region and the fourth region is greater than zero; a gate located in a trench; a source located on the first surface; and a drain located on the second surface. The technical solution provided by this invention maintains low on-resistance and
high cell density while suppressing
electric field concentration at the bottom of the trench and reducing Miller
capacitance.