Etching device and etching method thereof

Abstract

The present invention relates to an etching device and an etching method thereof. The etching device comprises: an etching liquid supply unit, which supplies etching liquid to an etching chamber; a rinsing liquid supply unit, which supplies rinsing liquid to the etching chamber; a cleaning liquid supply unit, which supplies cleaning liquid to the etching chamber; and a first pressurization maintaining unit, which maintains at least one of the etching chamber and the etching liquid supply unit in a pressurized environment.

Description

Technical Field

[0001] The invention relates to an etching device and an etching method capable of improving etching performance. Background Art

[0002] Silicon nitride film is used as a representative insulating film in semiconductor manufacturing processes. Silicon nitride film forms a structure in contact with silicon oxide film, polysilicon film, silicon object surface, etc. It is deposited by CVD (Chemical vapor deposition) process and removed by dry etching and wet etching.

[0003] Dry etching mainly involves adding fluorine-based gases and inert gases, etc., and is performed in a vacuum state. The equipment used to perform dry etching is expensive, so there are limitations in commercial applications. Therefore, wet etching using phosphoric acid is more widely used than dry etching.

[0004] Wet etching is the process of selectively etching the desired object layer in an object (substrate, etc.) by means of a chemical reaction of an etching solution. The operation can be performed by simply mixing an etching solution having a proportion that matches the required characteristics or etching degree, providing further improved operational compatibility than dry etching, being able to process a large number of objects at a time, and the device is inexpensive.

[0005] However, when wet etching is performed, part of the etching solution vaporizes, and the temperature of the object decreases due to the heat of vaporization. Due to the vaporization of the etching solution, it is difficult to control the concentration of the etching solution, resulting in losses. Therefore, in order to maintain the concentration of the etching solution constantly, a large amount of deionized water and etching solution are currently added to the etching tank to perform etching of the object. Due to the large amount of deionized water and etching solution, a large economic loss is caused.

[0006] Therefore, there is a need for a technology that can prevent the evaporation of the etching solution when the etching chamber is pressurized, maintain the concentration of the etching solution constantly, and significantly improve the selectivity of the silicon nitride film relative to the silicon oxide film.

[0007] As a prior art document related to the present invention, there is Korean Patent No. 10-0691479 (February 28, 2007), which discloses an etching device for a large-area substrate. Summary of the invention

[0008] Technical issues solved

[0009] The invention provides an etching device and an etching method capable of improving etching performance.

[0010] Technical Solution

[0011] An etching device according to one embodiment of the present invention is characterized in that it includes: an etching liquid supply unit, which supplies etching liquid to an etching chamber; a rinsing liquid supply unit, which supplies rinsing liquid to the etching chamber; a cleaning liquid supply unit, which supplies cleaning liquid to the etching chamber; and a first pressurization maintaining unit, which maintains at least one of the etching chamber and the etching liquid supply unit in a pressurized environment.

[0012] Furthermore, the apparatus may further include: a pressurized storage unit storing at least one of a rinse liquid and a cleaning liquid discharged from the etching chamber; and a second pressurized maintaining unit maintaining the pressurized storage unit in a pressurized environment.

[0013] In addition, it can include: a supply pipeline section, which connects the etching liquid supply section and the etching chamber; a circulation pipeline section, which connects the supply pipeline section and the etching liquid supply section; and a recovery pipeline section, which supplies the etching liquid discharged from the etching chamber to the etching liquid supply section.

[0014] In addition, it can include: a supply opening and closing unit that selectively opens and closes the supply pipeline unit; a circulation opening and closing unit that selectively opens and closes the circulation pipeline unit; and a recovery opening and closing unit that selectively opens and closes the recovery pipeline unit.

[0015] In addition, the etching liquid supply unit may include: a storage chamber storing the etching liquid; a suction unit provided in the supply pipeline unit to move the etching liquid; and a temperature maintaining unit to maintain the etching liquid stored in the storage chamber at a predetermined temperature.

[0016] In addition, the temperature maintaining unit may include: a heater provided in the storage box; and a temperature control unit which senses the temperature of the etching liquid and controls the driving of the heater so that the etching liquid is maintained at a predetermined temperature.

[0017] In addition, a pressurized exhaust line portion connecting the etching chamber and the pressurized storage portion may be further provided.

[0018] In addition, a pressurization opening and closing portion for selectively opening and closing the pressurized discharge line portion may be further provided.

[0019] In addition, the device may further include: a discharge line portion that discharges any one of the rinse liquid and the etching liquid discharged from the etching chamber to the outside; and a discharge opening and closing portion that selectively opens and closes the discharge line portion.

[0020] In addition, it may also include: a rinsing liquid pipeline portion, which connects the rinsing liquid supply portion and the etching chamber; a cleaning liquid pipeline portion, which connects the cleaning liquid supply portion and the etching chamber; a rinsing opening and closing portion, which selectively opens and closes the rinsing liquid pipeline portion; and a cleaning opening and closing portion, which selectively opens and closes the cleaning liquid pipeline portion.

[0021] In addition, the etching liquid supply unit may stop supplying the etching liquid to the etching chamber and heat the etching liquid to the predetermined temperature when the temperature of the etching liquid is lower than a predetermined temperature.

[0022] On the other hand, the etching method of another embodiment of the present invention is characterized in that it includes: a loading step of opening the etching chamber and placing the object; a pressurizing step of pressurizing the interior of the etching chamber; an etching step of supplying etching liquid into the etching chamber to etch the object; a rinsing step of supplying rinsing liquid into the etching chamber to remove by-products and etching liquid remaining in the object; a cleaning step of supplying cleaning liquid into the etching chamber to remove cleaning liquid remaining in the object; and an unloading step of opening the etching chamber and discharging the object to the outside.

[0023] Furthermore, the method may further include a heating step of heating the etching liquid to a predetermined temperature or higher than the predetermined temperature when the temperature of the etching liquid is lower than the predetermined temperature.

[0024] In addition, the heating step may cut off the supply of the etching solution to the etching chamber, so that the etching solution circulates and is heated in the circulation line portion.

[0025] In addition, the etching step can close the circulation pipeline part, the rinse liquid pipeline part and the cleaning liquid pipeline part, so that the etching liquid circulates through the supply liquid pipeline part, the etching chamber and the recovery pipeline part to perform etching.

[0026] In addition, at least one of the flushing step and the cleaning step may further include a discharge step of closing the recovery line portion and discharging at least one of the flushing liquid and the cleaning liquid into the pressurized storage portion.

[0027] In addition, the discharging step discharges at least one of the flushing liquid and the cleaning liquid while maintaining the pressurized storage portion in a pressurized environment.

[0028] Furthermore, before or before the unloading step, a drying step of drying the object may be further included.

[0029] Furthermore, before the unloading step, a decompression step of discharging the internal pressure of the etching chamber to the outside may be further included.

[0030] In addition, the etching solution can selectively use at least one of HF, NHO3, H2O2, IPA, NH4OH, H2O, H3PO4, H2SO4, or a mixture of more than one of them.

[0031] Effects of the Invention

[0032] An etching device and etching method according to an embodiment of the present invention maintain the interior of an etching chamber in a pressurized environment during etching, thereby preventing vaporization, maintaining the concentration of etching solution constantly, and improving etching selectivity.

[0033] In addition, since the concentration of the etching solution is kept constant, there is no need to add additional deionized water or etching solution to maintain the concentration of the etching solution, which can improve the product yield and reduce the consumption of the etching solution, thereby greatly saving costs in terms of economy.

[0034] Furthermore, since etching is performed while the object is immersed in the etching liquid, a thicker liquid film of the etching liquid can be formed, and etching performance can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] Figure 1 It is a diagram for illustrating an etching device and an etching method thereof according to an embodiment of the present invention.

[0036] Figure 2 FIG. 4 is a diagram for illustrating a state in which a pressurized storage unit is applied in an etching device and an etching method thereof according to another embodiment of the present invention. DETAILED DESCRIPTION

[0037] The preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0038] If you refer to the following and attached Figure 1 The advantages and features of the present invention and methods for achieving the same will become clear with the detailed description of the embodiments.

[0039] However, the present invention is not limited to the embodiments disclosed below, and can be embodied in various different forms. However, this embodiment is provided to make the disclosure of the present invention more complete and to fully inform the scope of the invention to those with ordinary knowledge in the technical field to which the present invention belongs. The present invention is only defined by the scope of the claims.

[0040] Furthermore, in describing the present invention, when it is determined that related conventional technologies may obscure the gist of the present invention, detailed descriptions thereof will be omitted.

[0041] Figure 1 is a diagram for illustrating an etching device and an etching method thereof according to an embodiment of the present invention, Figure 2 This is a diagram for illustrating a state in which a pressurized storage unit is applied in an etching device and an etching method thereof according to another embodiment of the present invention.

[0042] If reference Figure 1 and Figure 2An etching device according to an embodiment of the present invention includes an etching chamber 100 , an etching liquid supply unit 200 , a rinse liquid supply unit 300 , a cleaning liquid supply unit 400 and a first pressurization maintaining unit 500 .

[0043] The etching chamber 100 can be opened and closed, and a high-temperature etching solution (phosphoric acid: H3PO4, etc.) L1, a normal-temperature rinsing solution (phosphoric acid: H3PO4, etc.) L2, and a cleaning solution (water, etc.) L3 can be selectively supplied to the pressure chamber inside. The pressure chamber can be maintained in a pressurized environment by means of a first pressurization maintaining unit 500.

[0044] In an etching device according to an embodiment of the present invention, the etching liquid L1 and the rinsing liquid L2 are not limited, and various types can be used. For example, the etching liquid L1 and the rinsing liquid L2 according to an embodiment of the present invention can selectively use at least one of HF, NHO3, H2O2, IPA, NH4OH, H2O, H3PO4, H2SO4, or a mixture of more than one.

[0045] The etching chamber 100 may include a first chamber and a second chamber which is openably and closably disposed above the first chamber. A bracket (not shown) for placing an etching object may be disposed inside the etching chamber 100 .

[0046] As for the bracket of one embodiment of the present invention, the object can be placed on a support pin (not shown in the figure) and then fixed (clamped) by a chuck (not shown in the figure).

[0047] On the other hand, unlike a method in which an object is placed on a support pin of a bracket (not shown in the figure) and then fixed by a chuck, a bracket according to another embodiment of the present invention can use a method in which an etching performance enhancement portion (not shown in the figure) is formed on the upper surface of the bracket to place the object.

[0048] The etching performance improvement portion can be formed in a recessed manner so that the object can be placed in an inserted state and immersed in the etching solution. The etching performance improvement portion can include: a placement surface (not shown in the figure), the placement surface is formed along the edge so that the object can be placed; and a protrusion (not shown in the figure), the protrusion is formed along the edge of the placement surface to accommodate the etching solution on the upper part of the object.

[0049] In addition, one or more inlets (not shown in the figure) may be formed in the etching chamber 100 to supply etching liquid L1, rinsing liquid L2 and cleaning liquid (SC1, DHF, IPA, DIW, etc.) L3 to the interior of the pressure chamber, and a discharge portion (not shown in the figure) for discharging the etching liquid L1, rinsing liquid L2 and cleaning liquid L3 to the outside may be formed at the lower portion of the etching chamber 100.

[0050] The etching liquid supply unit 200 supplies the etching liquid L1 at a high temperature to the etching chamber 100 . When the temperature of the etching liquid L1 is below a predetermined temperature, the etching liquid supply unit 200 stops supplying the etching liquid L1 to the etching chamber 100 and heats the etching liquid L1 to the predetermined temperature.

[0051] The etching liquid supply unit 200 may include a storage chamber 210, a suction unit 220, and a temperature maintenance unit 230. The storage chamber 210 stores the etching liquid, the suction unit 220 is disposed in a supply pipeline unit 241 described later to move the etching liquid L1, and the temperature maintenance unit 230 maintains the etching liquid L1 stored in the storage chamber 210 at a predetermined temperature.

[0052] The temperature maintaining unit 230 may include: a heater 231, which is provided in the etching liquid supply unit 200; and a temperature control unit 232, which senses the temperature of the etching liquid L1 and controls the driving of the heater 231 so that the etching liquid L1 is maintained at a predetermined temperature. The heater 231 heats the etching liquid L1 contained in the etching liquid supply unit 200 to a predetermined temperature, and the suction unit 220 may transmit the suction pressure in a state connected to the supply pipeline unit 241.

[0053] Moreover, it may include: a supply pipeline section 241, the supply pipeline section 241 connects the etching liquid supply section 200 and the etching chamber 100; a circulation pipeline section 242, the circulation pipeline section 242 connects the supply pipeline section 241 and the etching liquid supply section 200; and a recovery pipeline section 243, the recovery pipeline section 243 supplies the etching liquid L1 discharged from the etching chamber 100 to the etching liquid supply section 200.

[0054] In addition, a supply opening and closing section 244 that selectively opens and closes the supply line section 241 , a circulation opening and closing section 245 that selectively opens and closes the circulation line section 242 , and a recovery opening and closing section 246 that selectively opens and closes the recovery line section 243 may be included.

[0055] The rinse liquid supply unit 300 supplies the rinse liquid L2 to the etching chamber 100 , and may include a rinse liquid pipeline unit 311 connecting the rinse liquid supply unit 300 and the etching chamber 100 , and a rinse opening and closing unit 312 for selectively opening and closing the rinse liquid pipeline unit 311 .

[0056] The cleaning liquid supply unit 400 supplies cleaning liquid to the etching chamber 100 , and may further include a cleaning liquid pipeline unit 411 connecting the cleaning liquid supply unit 400 and the etching chamber 100 , and a cleaning opening and closing unit 412 for selectively opening and closing the cleaning liquid pipeline unit 411 .

[0057] The first pressurizing maintaining unit 500 maintains at least one of the etching chamber 100 and the etching liquid supply unit 200 in a pressurized environment. At this time, the etching chamber 100 and the etching liquid supply unit 200 can be controlled by one first pressurizing maintaining unit 500, or the first pressurizing maintaining unit 500 can be connected to the etching chamber 100 and the etching liquid supply unit 200 respectively to control them independently.

[0058] In addition, it may also include: a pressurized storage unit 600, which contains at least one of the rinse liquid L2 and the cleaning liquid L3 discharged from the etching chamber 100; and a second pressurized maintaining unit 700, which maintains the pressurized storage unit 600 in a pressurized environment.

[0059] An etching device according to an embodiment of the present invention is as follows Figure 1 As shown, it may further include: a discharge pipeline portion 621, which discharges any one of the rinse liquid L2 and the cleaning liquid L3 discharged from the etching chamber 100 to the outside; and a discharge opening and closing portion 622, which selectively opens and closes the discharge pipeline portion 621.

[0060] That is, any one of the rinse liquid L2 and the cleaning liquid L3 discharged to the outside through the discharge port of the etching chamber 100 can be discharged to the outside through the discharge pipeline part 621 after the discharge opening and closing part 622 is opened.

[0061] On the other hand, an etching device according to another embodiment of the present invention is Figure 2 As shown, a pressurized exhaust line portion 611 connecting the etching chamber 100 and the pressurized storage portion 600 and a pressurized opening and closing portion 612 for selectively opening and closing the pressurized exhaust line portion 611 may be further provided.

[0062] That is, any one of the rinsing liquid L2 and the cleaning liquid L3 discharged to the outside through the discharge port of the etching chamber 100 can be stored in the pressurized storage part 600 through the pressurized discharge pipeline part 611 after the pressurized opening and closing part 612 is opened. When the pressure of the pressurized storage part 600 is discharged to the outside, any one of the rinsing liquid L2 and the cleaning liquid L3 stored in the pressurized storage part 600 can be discharged to the outside.

[0063] When describing the etching liquid L1 supply process of the etching liquid supply part 200, the supply opening and closing part 244 and the recovery opening and closing part 246 are opened, and the high-temperature etching liquid L1 is supplied to the inlet of the etching chamber 100 through the supply pipeline part 241, so that the etching liquid L1 discharged from the outlet of the etching chamber 100 is moved to the etching liquid supply part 200 through the recovery pipeline part 243.

[0064] At the same time, the circulation opening and closing part 245, the flushing opening and closing part 312 and the cleaning opening and closing part 412 are closed, and the discharge opening and closing part 622 or the pressurizing opening and closing part 612 are closed. At this time, the circulation pipeline part 242, the flushing liquid pipeline part 311 and the cleaning liquid pipeline part 411 are closed, and the discharge pipeline part 621 or the pressurizing discharge pipeline part 611 is closed.

[0065] In this process, when the temperature of the etching liquid L1 is lower than a predetermined temperature, the etching liquid supply unit 200 stops supplying the etching liquid L1 to the etching chamber 100 and heats the etching liquid L1 to the predetermined temperature.

[0066] When the temperature of the etching liquid L1 is lower than a predetermined temperature, the circulation opening and closing section 245 is opened to circulate the etching liquid L1 along the circulation line section 242 , and the supply opening and closing section 244 and the recovery opening and closing section 246 are closed.

[0067] In this state, the etching liquid L1 circulates only through a portion of the supply line 241 connecting the supply opening and closing section 244 and the storage chamber 210 and the circulation line 242 , and the etching liquid L1 is heated by the heater 231 until it reaches a predetermined temperature.

[0068] Then, when the temperature of the etching liquid L1 reaches a predetermined temperature, the supply opening and closing part 244 and the recovery opening and closing part 246 are opened, and the high-temperature etching liquid L1 is supplied to the inlet of the etching chamber 100 through the supply pipeline part 241, and the etching liquid L1 discharged from the outlet of the etching chamber 100 is moved to the etching liquid supply part 200 through the recovery pipeline part 243.

[0069] That is, during the supply process of the etching liquid L1 by the etching liquid supply unit 200, when the temperature of the etching liquid L1 drops below a predetermined temperature, the etching process is terminated, and the etching liquid L1 is circulated and heated to a predetermined temperature, thereby maintaining the etching liquid L1 at a temperature suitable for the process.

[0070] To explain the process of supplying the rinsing liquid L2 from the rinsing liquid supply unit 300 , the rinsing opening and closing unit 312 is opened, the rinsing liquid L2 at room temperature is supplied to the inlet of the etching chamber 100 through the rinsing liquid pipeline unit 311 , and the discharge opening and closing unit 622 or the pressurizing opening and closing unit 612 is opened.

[0071] At the same time, the supply opening and closing part 244, the recovery opening and closing part 246, the circulation opening and closing part 245 and the cleaning opening and closing part 412 are closed. At this time, the supply pipeline part 241, the recovery pipeline part 243, the circulation pipeline part 242 and the cleaning liquid pipeline part 411 are closed.

[0072] In this process, the rinse liquid L2 discharged to the outside through the discharge port of the etching chamber 100 may be discharged to the outside through the discharge line portion 621 , or may be stored in the pressurized storage portion 600 through the pressurized discharge line portion 611 .

[0073] When describing the supply process of the cleaning liquid L3 of the cleaning liquid supply part 400, the cleaning opening and closing part 412 is opened, and the cleaning liquid L3 is supplied to the inlet of the etching chamber 100 through the cleaning liquid pipeline part 411. Similar to the supply process of the rinse liquid L2, the discharge opening and closing part 622 or the pressurization opening and closing part 612 is opened.

[0074] At the same time, the supply opening and closing part 244, the recovery opening and closing part 246, the circulation opening and closing part 245 and the cleaning opening and closing part 412 are closed. At this time, the supply pipeline part 241, the recovery pipeline part 243, the circulation pipeline part 242 and the cleaning liquid pipeline part 411 are closed.

[0075] In this process, the cleaning liquid L3 discharged to the outside through the discharge port of the etching chamber 100 may be discharged to the outside through the discharge pipeline portion 621 , or may be stored in the pressurized storage portion 600 through the pressurized discharge pipeline portion 611 .

[0076] The following describes an etching method according to an embodiment of the present invention, and the same structure as the above structure will not be described repeatedly.

[0077] An etching method according to an embodiment of the present invention includes: a loading step of opening an etching chamber and placing an object (substrate, etc.); a pressurizing step of pressurizing the interior of the etching chamber; an etching step of supplying an etching solution into the etching chamber to etch the object; a rinsing step of supplying a rinsing solution into the etching chamber to remove byproducts and the etching solution remaining in the object; a cleaning step of supplying a cleaning solution into the etching chamber to remove the cleaning solution remaining in the object; and an unloading step of opening the etching chamber and discharging the object to the outside.

[0078] The loading step is a process of placing the object inside the etching chamber 100. In the loading step, the object may be placed inside the etching chamber 100 after the etching chamber 100 is opened.

[0079] In the pressurizing step, after the etching chamber 100 is sealed, the first pressurizing maintaining unit 500 is driven to supply gas (N 2 or the like) to the pressure chamber of the etching chamber 100 to pressurize the pressure chamber of the etching chamber 100 to a predetermined pressure.

[0080] The etching step drives the etching liquid supply unit 200 to spray the high-temperature etching liquid L1 through the inlet of the etching chamber 100. At this time, the etching step opens the supply opening and closing unit 244 and the recovery opening and closing unit 246, supplies the high-temperature etching liquid L1 to the inlet of the etching chamber 100 through the supply pipeline unit 241, and moves the etching liquid L1 discharged through the outlet of the etching chamber 100 to the etching liquid supply unit 200 through the recovery pipeline unit 243.

[0081] At the same time, the circulation opening and closing part 245, the flushing opening and closing part 312 and the cleaning opening and closing part 412 are closed, and the discharge opening and closing part 622 or the pressurizing opening and closing part 612 are closed. At this time, the circulation pipeline part 242, the flushing liquid pipeline part 311 and the cleaning liquid pipeline part 411 are closed, and the discharge pipeline part 621 or the pressurizing discharge pipeline part 611 is closed.

[0082] In the etching step, the circulation pipeline 242 , the rinse liquid pipeline 311 and the cleaning liquid pipeline 411 may be closed, and the etching liquid L1 may be circulated through the supply pipeline 241 , the etching chamber 100 and the recovery pipeline 243 to perform etching.

[0083] On the other hand, the method may further include: when the temperature of the etching liquid is below a predetermined temperature, heating the etching liquid to a predetermined temperature or higher than a predetermined temperature. During the heating step, the supply of the etching liquid L1 to the etching chamber 100 may be cut off, so that the etching liquid L1 circulates in the circulation line part 242 and is heated.

[0084] To explain in more detail, in the heating step, when the temperature of the etching liquid L1 is below a predetermined temperature, the circulation opening and closing part 245 is opened to circulate the etching liquid L1 along the circulation line part 242, and the supply opening and closing part 244 and the recovery opening and closing part 246 are closed.

[0085] In this state, the etching liquid L1 circulates only through a portion of the supply line 241 connecting the supply opening and closing section 244 and the storage chamber 210 and the circulation line 242 , and the etching liquid L1 is heated by the heater 231 until it reaches a predetermined temperature.

[0086] Then, when the temperature of the etching liquid L1 reaches a predetermined temperature, the supply opening and closing part 244 and the recovery opening and closing part 246 are opened, and the high-temperature etching liquid L1 is supplied to the inlet of the etching chamber 100 through the supply pipeline part 241, so that the etching liquid L1 discharged through the outlet of the etching chamber 100 is moved to the storage chamber 210 of the etching liquid supply part 200 through the recovery pipeline part 243.

[0087] That is, during the supply process of the etching liquid L1 by the etching liquid supply unit 200, when the temperature of the etching liquid L1 drops below a predetermined temperature, the etching process is terminated, and the etching liquid L1 is circulated and heated to a predetermined temperature, thereby maintaining the etching liquid L1 at a temperature suitable for the process.

[0088] The rinsing step is a process for driving the rinsing liquid supply unit 300 and supplying the rinsing liquid L2 into the etching chamber 100 to clean the object. In the rinsing step, a rinsing liquid (phosphoric acid: H3PO4, etc.) at room temperature is supplied through the inlet of the etching chamber 100, and the object is cooled for a predetermined time to remove the byproducts and etching liquid L1 remaining in the object.

[0089] At this time, in the rinsing step, the rinsing opening and closing part 312 is opened, and the rinsing liquid L2 at room temperature is supplied to the inlet of the etching chamber 100 through the rinsing liquid pipeline part 311, and the supply opening and closing part 244, the recovery opening and closing part 246, the circulation opening and closing part 245 and the cleaning opening and closing part 412 are closed. At this time, the supply pipeline part 241, the recovery pipeline part 243, the circulation pipeline part 242 and the cleaning liquid pipeline part 411 are closed.

[0090] The cleaning step is a process for driving the cleaning liquid supply unit 400 to supply cleaning liquid (water, etc.) L3 through the inlet of the etching chamber 100 to clean the object. At this time, in the cleaning step, the cleaning opening and closing unit 412 is opened, and the cleaning liquid L3 is supplied to the inlet of the etching chamber 100 through the cleaning liquid pipeline unit 411.

[0091] In addition, at least one of the flushing step and the cleaning step may further include a discharge step of closing the recovery line portion 243 and discharging at least one of the flushing liquid L2 and the cleaning liquid L3 into the pressurized storage portion 600 .

[0092] In the discharge step, the discharge opening and closing part 622 or the pressurizing opening and closing part 612 is opened, and the supply opening and closing part 244, the recovery opening and closing part 246 and the circulation opening and closing part 245 are closed. At this time, the supply pipeline part 241, the recovery pipeline part 243 and the circulation pipeline part 242 are closed.

[0093] In this process, the cleaning liquid L3 discharged to the outside through the discharge port of the etching chamber 100 can be discharged to the outside through the discharge pipeline part 621, or stored in the pressurized storage part 600 through the pressurized discharge pipeline part 611. At this time, at least one of the rinse liquid L2 and the cleaning liquid L3 can be discharged while the pressurized storage part 600 is maintained in a pressurized environment.

[0094] The unloading step is a process of discharging the object to the outside, and may include a drying step of drying the object before or after the unloading step. Before the unloading step, a decompression step of discharging the internal pressure of the etching chamber 100 to the outside may be included.

[0095] The drying method of the drying step can be applied in various ways as needed. In the drying step and the cleaning step, the pressure chamber of the etching chamber 100 can be maintained in a pressurized environment, or the internal pressure of the pressure chamber can be exhausted to the outside and cleaning and drying can be performed under atmospheric pressure.

[0096] In the decompression step, the exhaust part (not shown in the figure) can be driven to discharge the pressure of the pressure chamber to the outside, and the pressure chamber is maintained at the atmospheric pressure state by the pressure discharge of the exhaust part.

[0097] The above is a description of the specific embodiments of the etching device and etching method of the present invention. It goes without saying that various modifications can be made without departing from the scope of the present invention.

[0098] Therefore, the scope of the present invention should not be determined by being limited to the described embodiments, but should be determined based on the following claims and the scope equivalent to the claims.

[0099] That is, the aforementioned embodiments should be understood in all aspects as being merely illustrative and not restrictive. Compared with the detailed description, the scope of the present invention is represented by the claims described below, and all changes or deformations derived from the meaning and scope of the claims and their equivalent concepts should be interpreted as being included in the scope of the present invention.

Claims

1. An etching device, wherein: Include: an etching liquid supply unit, the etching liquid supply unit supplies etching liquid to an etching chamber in which the object is placed; a rinse liquid supply portion, the rinse liquid supply portion supplying rinse liquid to the etching chamber; a cleaning liquid supply unit, the cleaning liquid supply unit supplies cleaning liquid to the etching chamber; and a first pressurizing maintaining unit, the first pressurizing maintaining unit maintaining at least one of the etching chamber and the etching liquid supply unit in a pressurized environment; and a supply pipeline portion, the supply pipeline portion connecting the etching liquid supply portion and the etching chamber, The etching liquid supply unit has: a storage chamber, wherein the etching solution is stored in the storage chamber; and A temperature maintaining portion is provided, wherein the temperature maintaining portion maintains the etching solution stored in the storage chamber at a predetermined temperature.

2. The etching device according to claim 1, wherein: Also includes: a pressurized storage portion, the pressurized storage portion containing at least any one of the rinse liquid and the cleaning liquid discharged from the etching chamber; and A second pressurization maintaining portion is provided, wherein the second pressurization maintaining portion maintains the pressurized storage portion in a pressurized environment.

3. The etching device according to claim 1, wherein: have: a circulation pipeline portion, the circulation pipeline portion connecting the supply pipeline portion and the etching liquid supply portion; and A recovery pipeline part supplies the etching liquid discharged from the etching chamber to the etching liquid supply part.

4. The etching device according to claim 3, wherein: Include: a supply opening and closing portion, the supply opening and closing portion selectively opening and closing the supply pipeline portion; a circulation opening and closing unit, the circulation opening and closing unit selectively opening and closing the circulation pipeline unit; and A recovery opening and closing portion selectively opens and closes the recovery pipeline portion.

5. The etching device according to claim 3, wherein: The etching liquid supply unit also includes: a suction part, which is disposed on the supply pipeline part to move the etching liquid; During the etching process of the object, the etching solution circulates through the supply pipeline portion, the etching chamber and the recovery pipeline portion, and the object is etched. During the etching liquid supply process of the etching liquid supply unit, when the temperature of the etching liquid is below the predetermined temperature, the etching process is stopped. The etching solution circulates through the circulation pipeline and is heated until it reaches the predetermined temperature.

6. The etching device according to claim 5, wherein: The temperature maintaining unit comprises: a heater disposed in the storage chamber; and A temperature control unit senses the temperature of the etching liquid and controls the driving of the heater so that the etching liquid is maintained at a predetermined temperature.

7. The etching device according to claim 2, wherein: The invention also comprises a pressurized exhaust pipeline part connecting the etching chamber and the pressurized storage part.

8. The etching device according to claim 7, wherein: The device also includes a pressurization opening and closing portion for selectively opening and closing the pressurization discharge pipeline portion.

9. The etching device according to claim 1, wherein: Also available: a discharge pipeline portion, the discharge pipeline portion discharges any one of the rinse liquid and the etching liquid discharged from the etching chamber to the outside; and A discharge opening and closing portion selectively opens and closes the discharge pipeline portion.

10. The etching device according to claim 1, wherein: Also available: a flushing liquid pipeline portion, the flushing liquid pipeline portion connecting the flushing liquid supply portion and the etching chamber; a cleaning liquid pipeline portion, the cleaning liquid pipeline portion connecting the cleaning liquid supply portion and the etching chamber; a flushing opening and closing portion, the flushing opening and closing portion selectively opening and closing the flushing liquid pipeline portion; and A cleaning opening and closing portion selectively opens and closes the cleaning liquid pipeline portion.

11. An etching method, wherein: Include: A loading step of opening the etching chamber and placing the object; a pressurizing step of pressurizing the interior of the etching chamber; An etching step of supplying etching liquid into the etching chamber to etch the object; A rinsing step of supplying a rinsing liquid into the etching chamber to remove the byproducts and the etching liquid remaining on the object; A cleaning step of supplying a cleaning liquid into the etching chamber to remove the rinse liquid remaining in the object; and an unloading step of opening the etching chamber and discharging the object to the outside, In the etching step, the etching liquid supply unit is driven to supply the etching liquid to the etching chamber. The etching liquid supply unit has: a storage chamber, wherein the etching solution is stored in the storage chamber; and A temperature maintaining portion is provided, wherein the temperature maintaining portion maintains the etching solution stored in the storage chamber at a predetermined temperature.

12. The etching method according to claim 11, wherein: The method further comprises: when the temperature of the etching liquid is below a predetermined temperature, heating the etching liquid to the predetermined temperature or higher than the predetermined temperature.

13. The etching method according to claim 12, wherein: The etching liquid supply unit also includes: a suction unit, which is arranged on a supply pipeline connecting the etching liquid supply unit and the etching chamber to move the etching liquid. In the etching step, the etching liquid is circulated through the supply pipeline part, the etching chamber, and the recovery pipeline part for supplying the etching liquid discharged from the etching chamber to the etching liquid supply part. When the temperature of the etching solution is below the predetermined temperature, the etching step is terminated. In the heating step, the supply of the etching liquid to the etching chamber is stopped, and the etching liquid is circulated and heated through a circulation pipeline part connecting the supply pipeline part and the etching liquid supply part.

14. The etching method according to claim 11, wherein: At least one of the flushing step and the cleaning step further includes: a discharge step of closing a recovery pipeline portion and discharging at least one of the flushing liquid and the cleaning liquid into a pressurized storage portion.

15. The etching method according to claim 14, wherein: The discharging step discharges at least one of the flushing liquid and the cleaning liquid while maintaining the pressurized storage portion in a pressurized environment.

16. The etching method according to claim 11, wherein: The method further comprises a drying step of drying the object before or during the unloading step.

17. The etching method according to claim 11, wherein: Before the unloading step, a decompression step is further included to discharge the internal pressure of the etching chamber to the outside.

18. The etching method according to claim 11, wherein: The etching solution selectively uses at least one of HF, NHO3, H2O2, IPA, NH4OH, H2O, H3PO4, H2SO4 or a mixture of more than one of them.

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