Wafer deviation correction device and method for plasma etching machine

Abstract

The present invention relates to the field of plasma etching machines, and discloses a wafer offset correction device and method for a plasma etching machine, wherein the device comprises: an offset detection mechanism, which is placed inside the plasma etching machine, and is used to detect the offset angles of the wafer relative to the target position in the X-axis, Y-axis and / or Z-axis directions when the plasma etching machine etches the wafer; and an offset correction mechanism, which is connected to a fixing mechanism carrying the wafer, and is used to adjust the fixing mechanism when any of the offset angles of the wafer in the X-axis, Y-axis and / or Z-axis directions is greater than a preset angle threshold, so that the wafer is in the target position. The present invention can correct the offset wafer and avoid incomplete etching of the wafer.

Description

Technical Field

[0001] The present invention relates to the field of plasma etching machines, and in particular to a wafer deviation correction device and method for a plasma etching machine. Background Art

[0002] As the name suggests, plasma etcher is mainly used for plasma etching. Its main typical applications are as follows: plasma scum removal, photoresist stripping, surface treatment, anisotropic and isotropic plasma etcher failure analysis application material modification, packaging cleaning, passivation layer etching, polyimide etching, enhanced adhesion, biomedical applications, polymerization reaction, mixture cleaning, pre-bonding cleaning.

[0003] At present, a wafer fixing device is generally used to fix the wafer, and then the plasma released by the excitation coil is used to etch the surface to be etched of the wafer. The specific structure is shown in the etching device with application number 201410356255. However, once the position of the wafer shifts during the etching process of the etching device, the wafer will not be etched completely, and the yield rate will be greatly reduced. The bias voltage applied by the bias supply device to the wafer fixing device will further increase the probability of wafer shift. Summary of the invention

[0004] The object of the present invention is to provide a wafer offset correction device and method for a plasma etching machine, which can correct the offset wafer and avoid incomplete wafer etching.

[0005] In order to achieve the above-mentioned purpose, the present invention provides a wafer offset correction device for a plasma etching machine, characterized in that the wafer offset correction device for the plasma etching machine includes: an offset detection mechanism, which is placed inside the plasma etcher, and is used to detect the offset angles of the wafer relative to the target position in the X-axis, Y-axis and / or Z-axis directions when the plasma etcher etches the wafer; and an offset correction mechanism, which is connected to a fixing mechanism that carries the wafer, and is used to adjust the fixing mechanism when any one of the offset angles of the wafer in the X-axis, Y-axis and / or Z-axis directions is greater than a preset angle threshold, so that the wafer is in the target position.

[0006] Preferably, the offset detection mechanism includes: a processor, a rotating disk, an infrared transceiver and a driving mechanism, wherein: the infrared transceiver faces the wafer; the rotating disk carries the infrared transceiver and is connected to the driving mechanism, and is used to drive the infrared transceiver to rotate around the wafer in the XY plane or translate along the Z axis under the drive of the driving mechanism; and the processor is electrically connected to the infrared transceiver and the driving mechanism, and is used to control the operation of the driving mechanism and the infrared transceiver to detect the coordinates of the wafer, and determine the various offset angles of the wafer relative to the target position in the X-axis, Y-axis and / or Z-axis directions according to the coordinates of the wafer.

[0007] Preferably, the processor is used to control the operation of the driving mechanism and the infrared transceiver to detect the coordinates of the wafer, including: the processor is used to respond to the user's offset correction instruction, control the driving mechanism to drive the rotating disk to move to a target position, and continue to execute the following steps to obtain the coordinates of the wafer: control the rotating disk to rotate on the XY plane, and control the infrared transceiver to perform a detection at every preset rotation angle; and control the rotating disk to perform uniform translational motion along the Z axis, and control the infrared transceiver to continue detecting until the wafer is sensed.

[0008] Preferably, the offset correction mechanism includes: a controller, a first drive component, a second drive component and a third drive component, wherein: the first drive component, the second drive component and the third drive component are all electrically connected to the controller, and are used for responding to the respective movement signals in the X-axis direction, Y-axis direction and / or Z-axis direction of the controller when any of the offset angles of the wafer in the X-axis direction, Y-axis direction and / or Z-axis direction is greater than a preset angle threshold, to drive the fixing mechanism and the wafer to move along the X-axis direction, Y-axis direction or Z-axis direction corresponding to each movement signal.

[0009] Preferably, the first driving assembly includes: an annular shell, covering the outside of the fixing mechanism so that the fixing mechanism can slide in the annular shell; and a first driving cylinder, whose telescopic rod passes through the shell and is connected to the fixing mechanism, and whose outer shell is fixed to the annular shell, for responding to the movement signal of the controller in the X-axis direction to drive the fixing mechanism and the wafer to move along the X-axis direction.

[0010] Preferably, the third driving component comprises: a chain, a driving motor and a slider, wherein: one end of the chain is fixed to the shell, and the other end is connected to the rotor of the driving motor; the driving motor, whose shell is fixed on the slider, is used to respond to the movement signal of the controller in the Z-axis direction, drive the chain to move so that the fixing mechanism and the wafer move along the Z-axis direction; and the second driving component comprises: a second driving cylinder and a base plate, wherein: the base plate is fixed to the inner wall of the plasma etcher, and is provided with a slide groove matched with the slider, wherein the slide groove is in the same direction as the Y-axis direction; the second driving cylinder, whose shell is fixed on the base plate, and whose telescopic rod is connected to the slider, is used to respond to the movement signal of the controller in the Y-axis direction, drive the fixing mechanism and the wafer to move along the Y-axis direction.

[0011] Preferably, the exteriors of the first drive assembly, the second drive assembly and the third drive assembly are all provided with a corrosion-resistant layer.

[0012] In addition, the present invention also provides a wafer offset correction method for a plasma etcher, the wafer offset correction method for a plasma etcher comprising: when the plasma etcher etches the wafer, detecting the offset angles of the wafer relative to a target position in the X-axis, Y-axis and / or Z-axis directions; and when any one of the offset angles of the wafer in the X-axis, Y-axis and / or Z-axis directions is greater than a preset angle threshold, adjusting the position of the fixing mechanism for fixing the wafer so that the wafer is in the target position.

[0013] Preferably, the position of the fixing mechanism for fixing the wafer is adjusted so that the wafer is in the target position, including: controlling the driving mechanism to drive the rotating disk to rotate, and driving the infrared transceiver mechanism carried on the rotating disk to rotate around the wafer in the XY plane or translate along the Z axis; and controlling the infrared transceiver to detect the coordinates of the wafer, and determining the various offset angles of the wafer in the X-axis, Y-axis and / or Z-axis directions relative to the target position according to the coordinates of the wafer.

[0014] In addition, the present invention also provides a storage medium on which a program is stored, and when the program is executed, the wafer offset correction method of the plasma etching machine is implemented.

[0015] According to the above technical scheme, the wafer offset correction device of the plasma etcher of the present invention can realize the detection of various offset angles of the wafer in the X-axis, Y-axis and / or Z-axis directions relative to the target position by using the offset detection mechanism, so as to facilitate the subsequent angle adjustment, and then the offset correction mechanism can be used to adjust the fixing mechanism when any one of the offset angles of the wafer in the X-axis, Y-axis and / or Z-axis directions is greater than a preset angle threshold, so that the wafer is in the target position, thereby realizing the correction of the wafer offset, so that the wafer returns to the target position, and the wafer offset correction can be realized without opening the plasma etcher, and the entire adjustment method can be carried out simultaneously during etching, thereby improving the quality and efficiency of wafer processing.

[0016] Other features and advantages of the present invention will be described in detail in the following detailed description. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The accompanying drawings are used to provide a further understanding of the present invention and constitute a part of the specification. Together with the following specific embodiments, they are used to explain the present invention but do not constitute a limitation of the present invention. In the accompanying drawings:

[0018] Figure 1 It is a module block diagram of a wafer deviation correction device of a plasma etching machine of the present invention;

[0019] Figure 2 It is a structural schematic diagram of a deviation detection mechanism of a wafer deviation correction device of the present invention;

[0020] Figure 3 is a structural block diagram of an offset correction mechanism of a wafer offset correction device of the present invention; and

[0021] Figure 4 The present invention is a flow chart of a wafer offset correction method for a plasma etching machine.

[0022] Description of Reference Numerals

[0023] 1 Rotating plate 2 Infrared transceiver

[0024] 3 First drive motor 4 Drive cylinder

[0025] 5 Annular housing 6 First drive cylinder

[0026] 7 Chain 8 Slider

[0027] 9 Second driving cylinder 10 Base plate

[0028] 11 connecting rod 12 fixing mechanism

[0029] 13 Inner ring of the bearing 14 Outer ring of the bearing

[0030] 15 Chute DETAILED DESCRIPTION

[0031] The specific implementation of the present invention is described in detail below in conjunction with the accompanying drawings. It should be understood that the specific implementation described here is only used to illustrate and explain the present invention, and is not used to limit the present invention.

[0032] Before introducing the present invention in detail, the working principle of the plasma etching machine is briefly introduced. The plasma etching machine mainly processes the devices inside the chamber through its own closed chamber. At present, when the wafer inside the chamber is processed and etched, if its position is offset, the etching effect of the wafer will be poor. There is no better solution at present. It is mainly to make subjective judgments by observing the position of the wafer when it is placed. Even if the wafer is at the target position when it is placed, when the wafer is processed, due to various reasons such as vibration, the displacement of the fixing mechanism 12, etc., the displacement of the wafer will be caused, which will reduce the wafer qualification rate. When the example etching machine is working, the interior is full of reaction gas. If the wafer is rearranged by opening the chamber, it will not only affect the efficiency, but also seriously affect the quality of the product (due to contact with air).

[0033] Figure 1 It is a module block diagram of a wafer deviation correction device of a plasma etching machine of the present invention, such as Figure 1 As shown, the wafer offset correction device of the plasma etching machine includes: an offset detection mechanism, which is placed inside the plasma etching machine, and is used to detect the offset angles of the wafer relative to the target position in the X-axis, Y-axis and / or Z-axis directions when the plasma etching machine etches the wafer; and an offset correction mechanism, which is connected to the fixing mechanism 12 that carries the wafer, and is used to adjust the fixing mechanism 12 when any of the offset angles of the wafer in the X-axis, Y-axis and / or Z-axis directions is greater than a preset angle threshold, so that the wafer is in the target position. The offset detection mechanism and the offset correction mechanism are placed independently in the plasma etching machine. The two parts correspond to different functions, and the two can cooperate with each other and will not collide. In addition, the present invention makes certain improvements to the fixing mechanism 12, for example, it is only used to fix the wafer to avoid damage to the wafer, and the whole is not fixed inside the plasma etching machine, but can be moved to a certain position under the control of the offset correction mechanism, and the moving direction is X, Y, and Z directions.

[0034] In order to implement the present invention, two examples will be given below to specifically introduce the offset detection mechanism and the offset correction mechanism.

[0035] Figure 2 It is a schematic diagram of the structure of an offset detection mechanism, such as Figure 2As shown, the offset detection mechanism includes: a processor, a rotating disk 1 (actually annular), an infrared transceiver 2 and a driving mechanism, wherein: the infrared transceiver 2 faces the wafer and is respectively arranged on both sides of the rotating disk 1. Since the rotating disk 1 is annular, the gap in the middle can accommodate the wafer; the rotating disk 1 carries the infrared transceiver 2 and is connected to the driving mechanism, and is used to drive the infrared transceiver mechanism to rotate around the wafer in the XY plane or translate along the Z axis under the drive of the driving mechanism; and the processor is electrically connected to the infrared transceiver 2 and the driving mechanism, and is used to control the operation of the driving mechanism and the infrared transceiver 2 to detect the coordinates of the wafer, and determine the offset angles of the wafer relative to the target position in the X-axis, Y-axis and / or Z-axis directions according to the coordinates of the wafer.

[0036] Specifically, Figure 2 As shown, the driving mechanism includes: a first driving motor 3 and a driving cylinder 4, wherein: the housing of the first driving motor 3 is fixed to the outer ring 14 of the bearing, and its rotor is connected to the inner ring 13 of the bearing, and the inner ring 13 of the bearing is connected to the rotating disk 1 through a connecting rod 11, wherein the number of the connecting rods 11 is 3, and they are arranged at intervals of 120°. The housing of the driving cylinder 4 is connected to the inner wall of the plasma etching machine, and its telescopic rod is fixed to the outer ring 14 of the bearing to realize the movement of the bearing along the Z-axis direction. The number of the driving cylinders 4 is 4, and the intervals between two adjacent cylinders are 90°. Among them, the inner ring can rotate freely in the outer ring.

[0037] Preferably, the processor is used to control the operation of the driving mechanism and the infrared transceiver 2 to detect the coordinates of the wafer, including: the processor is used to control the driving mechanism to drive the rotating disk 1 to move to a target position in response to the user's offset correction instruction, and continue to execute the following steps to obtain the coordinates of the wafer: control the rotating disk 1 to rotate on the XY plane, and control the infrared transceiver 2 to perform a detection at every preset rotation angle; and control the rotating disk 1 to perform uniform translational motion along the Z axis, and control the infrared transceiver 2 to continue detecting until the wafer is sensed.

[0038] Among them, the processor, the driving mechanism and the infrared transceiver 2 are all wirelessly connected. Of course, in order to ensure stable signal transmission, it can be wired. However, if it is wired, an anti-corrosion layer needs to be applied to the outside of the wiring harness.

[0039] Figure 3 It is a structural diagram of an offset correction mechanism, such as Figure 3As shown, the offset correction mechanism includes: a controller, a first drive component, a second drive component and a third drive component, wherein: the first drive component, the second drive component and the third drive component are all electrically connected to the controller, and are used to respond to the respective movement signals in the X-axis direction, Y-axis direction and / or Z-axis direction of the controller when any of the offset angles of the wafer in the X-axis direction, Y-axis direction and / or Z-axis direction is greater than a preset angle threshold, and drive the fixing mechanism 12 and the wafer to move along the X-axis direction, Y-axis direction or Z-axis direction corresponding to each movement signal.

[0040] Among them, the first driving component may include: an annular shell 5 (square ring), which is covered on the outside of the fixing mechanism 12 so that the fixing mechanism 12 can slide in the annular shell 5; and a first driving cylinder 6 (two in number), whose telescopic rod passes through the shell and is connected to the fixing mechanism 12, and whose outer shell is fixed to the annular shell 5, for responding to the movement signal of the controller in the X-axis direction, driving the fixing mechanism 12 and the wafer to move along the X-axis direction.

[0041] Preferably, the third driving component includes: a chain 7 (4 in number, respectively arranged at the four corners of the shell), a second driving motor (not shown in the figure) and a slider 8, wherein: the chain 7 is fixedly connected to the shell at one end and connected to the rotor of the driving motor at the other end; the second driving motor, whose outer shell is fixed on the slider 8, is used to respond to the movement signal of the controller in the Z-axis direction to drive the chain 7 to move so that the fixing mechanism 12 and the wafer move along the Z-axis direction. The structure is specifically that one end of the chain 7 is fixedly connected to the second driving motor, and the second driving motor collects the chain 7 when it rotates forward, and releases the chain 7 when it rotates reversely. There are 4 second driving motors, which are placed inside the slider 8.

[0042] Preferably, the second driving component may include: a second driving cylinder 9 (actually 4, matched with the slider 8) and a base plate 10, wherein: the base plate 10 is fixed to the inner wall of the plasma etcher (actually fixed on the inner wall of the plasma etcher on both sides), and is provided with a slide groove 15 matched with the slider 8, and the slider 8 can only slide in the slide groove 15, wherein the slide groove 15 is in the same direction as the Y-axis direction; the second driving cylinder 9, whose outer shell is fixed on the base plate 10, and whose telescopic rod is connected to the slider 8, is used to respond to the movement signal of the controller in the Y-axis direction to drive the fixing mechanism 12 and the wafer to move along the Y-axis direction.

[0043] Preferably, the first drive assembly, the second drive assembly and the third drive assembly are all provided with a corrosion-resistant layer on the outside, wherein the corrosion-resistant layer is a protective structure.

[0044] Figure 4 It is a flow chart of a wafer offset correction method of a plasma etching machine of the present invention, such as Figure 4 As shown, the wafer offset correction method of the plasma etcher includes: S401, when the plasma etcher etches the wafer, detecting each offset angle of the wafer relative to the target position in the X-axis, Y-axis and / or Z-axis directions; and S402, when any one of the offset angles of the wafer in the X-axis, Y-axis and / or Z-axis directions is greater than a preset angle threshold, adjusting the position of the fixing mechanism 12 for fixing the wafer so that the wafer is in the target position.

[0045] Preferably, the position of the fixing mechanism 12 for fixing the wafer is adjusted so that the wafer is in the target position, including: controlling the driving mechanism to drive the rotating disk 1 to rotate, and driving the infrared transceiver mechanism carried on the rotating disk 1 to rotate around the wafer in the XY plane or translate along the Z axis; and controlling the infrared transceiver 2 to detect the coordinates of the wafer, and determining the various offset angles of the wafer in the X-axis, Y-axis and / or Z-axis directions relative to the target position according to the coordinates of the wafer.

[0046] Among them, the wafer offset correction method of the plasma etching machine of the present invention has the same technical scheme and technical effect as the wafer offset correction device of the plasma etching machine compared with the prior art, which will not be repeated here.

[0047] An embodiment of the present invention provides a storage medium on which a program is stored. When the program is executed, the wafer offset correction method of the plasma etching machine is implemented.

[0048] An embodiment of the present invention provides a program processor, which is used to run a program, wherein the wafer offset correction method of the plasma etching machine is executed when the program is run.

[0049] The present application also provides a computer program product, which, when executed on a data processing device, is suitable for executing a program for initializing the following method steps: Figure 4 A wafer offset correction method for a plasma etcher in FIG.

[0050] Those skilled in the art will appreciate that the embodiments of the present application may be provided as methods, systems, or computer program products. Therefore, the present application may adopt the form of a complete hardware embodiment, a complete software embodiment, or an embodiment in combination with software and hardware. Moreover, the present application may adopt the form of a computer program product implemented in one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) that include computer-usable program code.

[0051] The present application is described with reference to the flowcharts and / or block diagrams of the methods, devices (systems), and computer program products according to the embodiments of the present application. It should be understood that each process and / or box in the flowchart and / or block diagram, as well as the combination of the processes and / or boxes in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing device to generate a machine, so that the instructions executed by the processor of the computer or other programmable data processing device generate instructions for implementing the processes in the flowchart and / or block diagram. Figure 1 A process or multiple processes and / or boxes Figure 1 A device that provides the functions specified in a block or multiple blocks.

[0052] These computer program instructions may also be stored in a computer-readable memory capable of directing a computer or other programmable data processing device to operate in a specific manner, so that the instructions stored in the computer-readable memory produce an article of manufacture comprising an instruction device, which implements the process Figure 1 A process or multiple processes and / or boxes Figure 1 A function specified in one or more boxes.

[0053] These computer program instructions can also be loaded onto a computer or other programmable data processing device so that a series of operating steps are executed on the computer or other programmable device to produce a computer-implemented process, thereby providing instructions for implementing the process. Figure 1 A process or multiple processes and / or boxes Figure 1 A step that specifies a function in one or more boxes.

[0054] In a typical configuration, a computing device includes one or more processors (CPU), input / output interfaces, network interfaces, and memory.

[0055] The memory may include non-permanent memory in a computer-readable medium, random access memory (RAM) and / or non-volatile memory in the form of read-only memory (ROM) or flash RAM. The memory is an example of a computer-readable medium.

[0056] Computer readable media include permanent and non-permanent, removable and non-removable media that can be implemented by any method or technology to store information. Information can be computer readable instructions, data structures, program modules or other data. Examples of computer storage media include, but are not limited to, phase change memory (PRAM), static random access memory (SRAM), dynamic random access memory (DRAM), other types of random access memory (RAM), read-only memory (ROM), electrically erasable programmable read-only memory (EEPROM), flash memory or other memory technology, compact disk read-only memory (CD-ROM), digital versatile disk (DVD) or other optical storage, magnetic cassettes, magnetic tape magnetic disk storage or other magnetic storage devices or any other non-transmission media that can be used to store information that can be accessed by a computing device. As defined herein, computer readable media does not include temporary computer readable media (transitory media), such as modulated data signals and carrier waves.

[0057] It should also be noted that the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, commodity or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, commodity or device. In the absence of more restrictions, the elements defined by the sentence "comprises a ..." do not exclude the existence of other identical elements in the process, method, commodity or device including the elements.

[0058] Those skilled in the art will appreciate that the embodiments of the present application may be provided as methods, systems or computer program products. Therefore, the present application may adopt the form of a complete hardware embodiment, a complete software embodiment or an embodiment in combination with software and hardware. Moreover, the present application may adopt the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) that contain computer-usable program code.

[0059] The above are only embodiments of the present application and are not intended to limit the present application. For those skilled in the art, the present application may have various changes and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included within the scope of the claims of the present application.

Claims

1. A wafer deviation correction device for a plasma etching machine, characterized in that: The wafer deviation correction device of the plasma etching machine comprises: An offset detection mechanism is disposed inside the plasma etcher, and is used to detect the offset angles of the wafer relative to the target position in the X-axis, Y-axis and / or Z-axis directions when the plasma etcher etches the wafer; and An offset correction mechanism, connected to a fixing mechanism carrying the wafer, for adjusting the fixing mechanism when any of the offset angles of the wafer in the X-axis, Y-axis and / or Z-axis directions is greater than a preset angle threshold, so that the wafer is in a target position; The offset correction mechanism comprises: a controller, a first drive assembly, a second drive assembly and a third drive assembly, wherein: The first drive assembly, the second drive assembly and the third drive assembly are all electrically connected to the controller, and are used to drive the fixing mechanism and the wafer to move along the X-axis direction, the Y-axis direction or the Z-axis direction corresponding to each movement signal in response to the movement signal of the controller in the X-axis direction, the Y-axis direction and / or the Z-axis direction respectively when any one of the offset angles of the wafer in the X-axis direction, the Y-axis direction and / or the Z-axis direction is greater than a preset angle threshold; The first driving assembly comprises: an annular housing, covering the outside of the fixing mechanism so that the fixing mechanism can slide in the annular housing; and a first driving cylinder, whose telescopic rod passes through the annular housing and is connected to the fixing mechanism, and whose housing is fixed to the annular housing, and is used for driving the fixing mechanism and the wafer to move along the X-axis direction in response to a movement signal of the controller in the X-axis direction; The third driving assembly includes: a chain, a driving motor and a slider, wherein: the chain has one end fixed to the housing and the other end connected to the rotor of the driving motor; the driving motor, whose housing is fixed to the slider, is used to respond to the movement signal of the controller in the Z-axis direction to drive the chain to move so that the fixing mechanism and the wafer move along the Z-axis direction; and The second driving component includes: a second driving cylinder and a base plate, wherein: the base plate is fixed to the inner wall of the plasma etching machine and is provided with a slide groove adapted to the slider, wherein the slide groove is in the same direction as the Y-axis direction; the second driving cylinder, the outer shell of the second driving cylinder is fixed to the base plate, and its telescopic rod is connected to the slider, for responding to the Y-axis movement signal of the controller to drive the fixing mechanism and the wafer to move along the Y-axis direction.

2. The wafer deviation correction device for a plasma etching machine according to claim 1, characterized in that: The offset detection mechanism comprises: a processor, a rotating disk, an infrared transceiver and a driving mechanism, wherein: The infrared transceiver is facing the wafer; The rotating disk carries the infrared transceiver and is connected to the driving mechanism, and is used to drive the infrared transceiver to perform rotational motion around the wafer in the XY plane or translational motion along the Z axis under the drive of the driving mechanism; and The processor is electrically connected to the infrared transceiver and the driving mechanism, and is used to control the operation of the driving mechanism and the infrared transceiver to detect the coordinates of the wafer, and determine the various offset angles of the wafer relative to the target position in the X-axis, Y-axis and / or Z-axis directions according to the coordinates of the wafer.

3. The wafer deviation correction device for a plasma etching machine according to claim 2, characterized in that: The processor is used to control the operation of the driving mechanism and the infrared transceiver to detect the coordinates of the wafer, including: The processor is used to control the driving mechanism to drive the rotating disk to move to a target position in response to a user's offset correction instruction, and continue to perform the following steps to obtain the coordinates of the wafer: Controlling the rotating disk to rotate on the XY plane, and controlling the infrared transceiver to perform a detection once at every preset rotation angle; and The rotating disk is controlled to perform uniform translational motion along the Z axis, and the infrared transceiver is controlled to continuously detect until the wafer is sensed.

4. The wafer deviation correction device for a plasma etching machine according to claim 1, characterized in that: The exteriors of the first drive assembly, the second drive assembly and the third drive assembly are all provided with a corrosion-resistant layer.

5. A wafer offset correction method for a plasma etching machine, characterized in that: The wafer offset correction method of the plasma etching machine uses the wafer offset correction device of the plasma etching machine as described in any one of claims 1 to 4 for correction, comprising: When the plasma etcher etches the wafer, detecting each offset angle of the wafer relative to the target position in the X-axis, Y-axis and / or Z-axis directions; and When any of the offset angles of the wafer in the X-axis, Y-axis and / or Z-axis directions is greater than a preset angle threshold, the position of a fixing mechanism for fixing the wafer is adjusted so that the wafer is at a target position.

6. The wafer deviation correction method for a plasma etching machine according to claim 5, characterized in that: The step of adjusting the position of the fixing mechanism for fixing the wafer so that the wafer is at a target position includes: Controlling the driving mechanism to drive the rotating disk to rotate, and driving the infrared transceiver mechanism carried on the rotating disk to perform a rotational motion around the wafer in the XY plane or a translational motion along the Z axis; and The infrared transceiver is controlled to detect the coordinates of the wafer, and the offset angles of the wafer relative to the target position in the X-axis, Y-axis and / or Z-axis directions are determined according to the coordinates of the wafer.

7. A storage medium, characterized in that: A program is stored thereon, and when the program is executed, the wafer offset correction method of the plasma etching machine as described in claim 5 or 6 is implemented.

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