Photoresist composition, preparation method and application thereof, and method for forming photoresist pattern

Abstract

The present invention provides a photoresist composition, a preparation method and an application thereof, and a method for forming a photoresist pattern, and specifically relates to the field of photoresist technology. The photoresist composition comprises a poly(p-hydroxystyrene) homopolymer and a photodeactivator, and the mass ratio of the two is 100-600:2-50. The weight average molecular weight of the poly(p-hydroxystyrene) homopolymer is 1000-20000. The photoresist composition has strong photosensitivity, and after exposure by a 248nm deep ultraviolet lithography light source, the exposure dose can be reduced to 10mJ / cm at a film thickness of 500nm. 2 The poly(p-hydroxystyrene) homopolymer has no protective group and can participate in cross-linking, so it has a higher carbon atom content, significantly improves dry etching resistance, improves etching ratio, greatly improves customer production efficiency, and reduces production costs.

Description

Technical Field

[0001] The invention relates to the technical field of photoresists, and in particular to a photoresist composition, a preparation method and application thereof, and a method for forming a photoresist pattern. Background Art

[0002] Deep UV positive photoresist for KrF excimer laser (248nm) exposure has a wide range of important applications in the market. This type of photoresist is mainly used in the manufacture of 0.25~0.15 micron key size chips, which is a bottleneck project.

[0003] The existing KrF photoresist system is mainly based on poly(p-hydroxystyrene) and its derivatives, and its reaction mechanism is deprotection. Because the resin contains a large number of protective groups and methacrylate monomers, their presence reduces the carbon atom content in the film, and the carbon atom content directly affects the dry etching resistance of the film, resulting in the inability to further improve the dry etching resistance of the existing KrF positive photoresist, and the technical effect is poor. At the same time, the protective groups in the resin need to be removed during the reaction, but the deprotection reaction requires more catalysts, so the exposure dose is usually 20~30mJ / cm 2 , unable to continue to decline, reducing the production efficiency of chip factories.

[0004] In view of this, the present invention is proposed. Summary of the invention

[0005] One of the purposes of the present invention is to provide a photoresist composition, which solves the technical problems of high exposure dose and poor dry etching resistance of the photoresist film in the prior art.

[0006] A second object of the present invention is to provide a method for preparing a photoresist composition, which has simple procedures, large processing capacity, is suitable for mass production and has low cost.

[0007] A third object of the present invention is to provide an application of a photoresist composition in the manufacture of integrated circuits, which improves the production efficiency of integrated circuits and reduces production costs.

[0008] A fourth object of the present invention is to provide a method for forming a photoresist pattern, thereby ensuring that the formed pattern meets actual process requirements and achieving a better photoresist pattern.

[0009] In order to solve the above technical problems, the present invention particularly adopts the following technical solutions:

[0010] A first aspect of the present invention provides a photoresist composition comprising a poly(p-hydroxystyrene) homopolymer and a photodeactivator.

[0011] Wherein, the mass ratio of the poly(p-hydroxystyrene) homopolymer to the photodeactivator is 100-600:2-50.

[0012] Optionally, the structural formula of the poly(p-hydroxystyrene) homopolymer is:

[0013] ;

[0014] Here, n is an integer greater than 1.

[0015] Preferably, the weight average molecular weight of the poly(p-hydroxystyrene) homopolymer is 1,000-20,000.

[0016] Preferably, the photodeactivator includes at least one of acetophenone O-benzoyl oxime, nifedipine, 2-nitrophenylmethyl 4-methacryloyloxypiperidine-1-carboxylate, 1,2-diisopropyl-3-[bis(dimethylamino)methylene]guanidine 2-(3-benzoylphenyl) propionate and 1,2-dicyclohexyl-4,4,5,5-tetramethylbiguanidine n-butyltriphenylborate.

[0017] Preferably, the following components are included by mass: 10-60 parts of poly(p-hydroxystyrene) homopolymer, 2-20 parts of a cross-linking agent, 0.2-5 parts of an acidic catalyst, and 0.2-5 parts of a photodeactivator.

[0018] Preferably, the invention further comprises 5-90 parts by mass of a solvent.

[0019] Optionally, the cross-linking agent includes at least one of glycoluril, glycoluril derivatives, 1,3-bishydroxymethylurea, and 1,3-dimethyl-2-imidazolidinone.

[0020] Preferably, the acidic catalyst comprises an organic acid and / or an inorganic acid.

[0021] Preferably, the organic acid includes at least one of formic acid, acetic acid, propionic acid, methanesulfonic acid, ethanesulfonic acid, propanesulfonic acid and p-toluenesulfonic acid.

[0022] Preferably, the inorganic acid includes at least one of hydrochloric acid, sulfuric acid, nitric acid, phosphoric acid and hydrofluoric acid.

[0023] Preferably, the solvent comprises an organic solvent.

[0024] Preferably, the organic solvent includes at least one of glycol methyl ether, propylene glycol methyl ether acetate, ethyl acetate and ethyl lactate.

[0025] The second aspect of the present invention provides a method for preparing the photoresist composition, which is obtained by uniformly mixing the poly(p-hydroxystyrene) homopolymer, the photodeactivator, optionally a cross-linking agent, optionally an acidic catalyst and optionally a solvent.

[0026] The third aspect of the present invention provides use of the photoresist composition in manufacturing integrated circuits.

[0027] A fourth aspect of the present invention provides a method for forming a photoresist pattern, the method comprising the following steps:

[0028] Step A: coating a photoresist composition on a target layer to form a photoresist layer;

[0029] Step B: exposing the photoresist layer to actinic radiation after pre-baking to obtain an exposed photoresist layer;

[0030] Step C: adding a developer to the exposed photoresist layer after intermediate baking, and developing to obtain the photoresist pattern.

[0031] Optionally, the pre-baking temperature is 90-110°C.

[0032] Preferably, the pre-baking time is 30-90s.

[0033] Preferably, the temperature of the intermediate baking is 120-140°C.

[0034] Preferably, the intermediate baking time is 30-90s.

[0035] Optionally, in step B, the photoresist layer to be exposed is obtained after pre-baking and before exposure to actinic radiation.

[0036] Preferably, the thickness of the photoresist layer to be exposed is 500 nm.

[0037] Preferably, in step C, a developer is added for development.

[0038] Preferably, the developer comprises tetramethylammonium hydroxide solution, potassium hydroxide solution or sodium hydroxide solution.

[0039] Compared with the prior art, the present invention has at least the following beneficial effects:

[0040] The photoresist composition provided by the present invention uses a photodeactivator and a poly(p-hydroxystyrene) homopolymer to react. When exposed to light, the photodeactivator generates an intermediate substance to prevent the cross-linking reaction of the poly(p-hydroxystyrene) homopolymer, so that the photoresist composition is dissolved in a developer to form a positive image. The photoresist composition has strong photosensitivity. After exposure using a 248nm deep ultraviolet lithography light source, the exposure dose can be reduced to 10mJ / cm at a film thickness of 500nm. 2After exposure, the photodeactivator generates alkaline compounds that inactivate the acidic catalyst, making it unable to catalyze the cross-linking reaction between the poly(p-hydroxystyrene) homopolymer and the cross-linking agent. However, the cross-linking reaction can occur in the non-exposed area. Since it does not contain protective groups, it has a higher carbon atom content, which significantly improves the dry etching resistance, improves the etching ratio, greatly improves the customer's production efficiency, and reduces production costs.

[0041] The preparation method of the photoresist composition provided by the invention has simple procedures, large processing volume, is suitable for mass production and has low cost.

[0042] The application of the photoresist composition provided by the invention in manufacturing integrated circuits improves the production efficiency of the integrated circuits and reduces the production cost.

[0043] The method for forming a photoresist pattern provided by the present invention ensures that the formed pattern meets actual process requirements and realizes a better photoresist pattern. DETAILED DESCRIPTION

[0044] In order to make the purpose, technical solution and advantages of the present invention clearer, the technical solution in the embodiment of the present invention will be clearly and completely described below in combination with the embodiment of the present invention. Obviously, the described embodiment is a part of the embodiment of the present invention, but not all of the embodiments. The components of the embodiment of the present invention can be arranged and designed in various configurations.

[0045] A first aspect of the present invention provides a photoresist composition comprising a poly(p-hydroxystyrene) homopolymer and a photodeactivator.

[0046] Wherein, the mass ratio of the poly(p-hydroxystyrene) homopolymer to the photodeactivator is 100-600:2-50.

[0047] The photoresist composition provided by the present invention uses a photodeactivator and a poly(p-hydroxystyrene) homopolymer to react. When exposed to light, the photodeactivator generates an intermediate substance to prevent the cross-linking reaction of the poly(p-hydroxystyrene) homopolymer, so that the photoresist composition is dissolved in a developer to form a positive image. The photoresist composition has strong photosensitivity. After exposure using a 248nm deep ultraviolet lithography light source, the exposure dose can be reduced to 10mJ / cm at a film thickness of 500nm. 2 The poly(p-hydroxystyrene) homopolymer has no protective group and can participate in cross-linking, so it has a higher carbon atom content, significantly improves dry etching resistance, improves etching ratio, greatly improves customer production efficiency, and reduces production costs.

[0048] When the mass ratio of poly(p-hydroxystyrene) homopolymer to photodeactivator is lower than 100:50, the proportion of photodeactivator is too high to be dissolved normally in the solvent, and will cause the uniformity of the photoresist film to decrease and the resistance to dry etching to decrease; when the mass ratio of poly(p-hydroxystyrene) homopolymer to photodeactivator is higher than 600:2, the content of photodeactivator is too low to be effectively deactivated.

[0049] In some preferred embodiments of the present invention, the mass ratio of poly(p-hydroxystyrene) homopolymer to the photodeactivator is typically but not limited to 100:2, 100:30, 100:50, 200:2, 200:30, 200:50, 300:2, 300:30, 300:50, 400:2, 400:30, 400:50, 500:2, 500:30, 500:50, 600:2, 600:30 or 600:50.

[0050] Optionally, the structural formula of the poly(p-hydroxystyrene) homopolymer is:

[0051] ;

[0052] Here, n is an integer greater than 1.

[0053] Preferably, the weight average molecular weight of the poly(p-hydroxystyrene) homopolymer is 1,000-20,000.

[0054] The poly(p-hydroxystyrene) homopolymer used in the original 248nm positive photoresist system is an acid-sensitive resin containing a large number of protective groups. It also contains methacrylate monomers, which can undergo a decomposition reaction under the action of acid and heat. The ester group is removed to generate a hydrophilic acidic group, thereby changing the material system from lipophilic to hydrophilic. An image can be obtained by developing it.

[0055] The poly(p-hydroxystyrene) homopolymer selected in the present invention does not contain a protective group after exposure, can participate in a cross-linking reaction, has alkali solubility and excellent dry etching resistance.

[0056] When the weight average molecular weight of the poly(p-hydroxystyrene) homopolymer is lower than 1000, the molecular weight is too low to effectively cross-link to form macromolecules insoluble in alkaline developer; when the weight average molecular weight of the poly(p-hydroxystyrene) homopolymer is higher than 20000, it is difficult to dissolve in solvents and cannot be used as a photoresist resin.

[0057] In some embodiments of the invention, the weight average molecular weight of the poly(p-hydroxystyrene) homopolymer is typically but not limited to 1000, 2000, 3000, 4000, 5000, 6000, 7000, 8000, 9000, 10000, 11000, 12000, 13000, 14000, 15000, 16000, 17000, 18000, 19000 or 20000.

[0058] Preferably, the photodeactivator includes at least one of acetophenone O-benzoyl oxime, nifedipine, 2-nitrophenylmethyl 4-methacryloyloxypiperidine-1-carboxylate, 1,2-diisopropyl-3-[bis(dimethylamino)methylene]guanidine 2-(3-benzoylphenyl) propionate and 1,2-dicyclohexyl-4,4,5,5-tetramethylbiguanidine n-butyltriphenylborate.

[0059] When exposed to ultraviolet light, the photodeactivator generates alkaline compounds that react with the acidic catalyst to neutralize, deactivating the acidic catalyst and making it unable to catalyze the cross-linking reaction of poly(p-hydroxystyrene) homopolymer. Therefore, in the ultraviolet light irradiation area, poly(p-hydroxystyrene) homopolymer is not cross-linked and cured, but dissolved in the alkaline developer, forming a positive image in the non-exposed area, completing the processing of fine graphics.

[0060] In some embodiments of the present invention, the photodeactivator is typically but not limited to acetophenone O-benzoyl oxime, nifedipine, 2-nitrophenylmethyl 4-methacryloyloxypiperidine-1-carboxylate, 1,2-diisopropyl-3-[bis(dimethylamino)methylene]guanidine 2-(3-benzoylphenyl) propionate or 1,2-dicyclohexyl-4,4,5,5-tetramethylbiguanidine n-butyltriphenylborate.

[0061] Preferably, the following components are included by mass: 10-60 parts of poly(p-hydroxystyrene) homopolymer, 2-20 parts of a cross-linking agent, 0.2-5 parts of an acidic catalyst, and 0.2-5 parts of a photodeactivator.

[0062] Preferably, the invention further comprises 5-90 parts by mass of a solvent.

[0063] In some preferred embodiments of the present invention, the mass fraction of poly(p-hydroxystyrene) homopolymer is typically but not limited to 10, 20, 30, 40, 50 or 60 parts; the mass fraction of cross-linking agent is typically but not limited to 2, 5, 10, 15, 18, 19 or 20 parts; the mass fraction of acid catalyst is typically but not limited to 0.2, 0.5, 1, 2, 3, 4 or 5 parts; the mass fraction of photodeactivator is typically but not limited to 0.2, 0.5, 1, 2, 3, 4 or 5 parts.

[0064] Optionally, the cross-linking agent includes at least one of glycoluril, glycoluril derivatives, 1,3-bishydroxymethylurea, and 1,3-dimethyl-2-imidazolidinone.

[0065] The structural formula of glycoluril is .

[0066] In some embodiments of the present invention, the crosslinking agent is typically, but not limited to, glycoluril, glycoluril derivatives, 1,3-bishydroxymethylurea or 1,3-dimethyl-2-imidazolidinone.

[0067] Preferably, the acidic catalyst comprises an organic acid and / or an inorganic acid.

[0068] In some embodiments of the present invention, the acidic catalyst is typically, but not limited to, an organic acid.

[0069] In some embodiments of the present invention, the acidic catalyst is typically, but not limited to, an inorganic acid.

[0070] In some embodiments of the present invention, the acidic catalyst is typically, but not limited to, organic acids and inorganic acids.

[0071] Preferably, the organic acid includes at least one of formic acid, acetic acid, propionic acid, methanesulfonic acid, ethanesulfonic acid, propanesulfonic acid and p-toluenesulfonic acid.

[0072] In some embodiments of the present invention, the organic acid is typically, but not limited to, formic acid, acetic acid, propionic acid, methanesulfonic acid, ethanesulfonic acid, propanesulfonic acid, or p-toluenesulfonic acid.

[0073] Preferably, the inorganic acid includes at least one of hydrochloric acid, sulfuric acid, nitric acid, phosphoric acid and hydrofluoric acid.

[0074] In some embodiments of the present invention, the inorganic acid is typically, but not limited to, hydrochloric acid, sulfuric acid, nitric acid, phosphoric acid, or hydrofluoric acid.

[0075] Preferably, the solvent comprises an organic solvent.

[0076] Preferably, the organic solvent includes at least one of glycol methyl ether, propylene glycol methyl ether acetate, ethyl acetate and ethyl lactate.

[0077] In some embodiments of the present invention, the organic solvent is typically but not limited to glycol methyl ether, propylene glycol methyl ether acetate, ethyl acetate or ethyl lactate.

[0078] The second aspect of the present invention provides a method for preparing the photoresist composition, which is obtained by uniformly mixing the poly(p-hydroxystyrene) homopolymer, the photodeactivator, optionally a cross-linking agent, optionally an acidic catalyst and optionally a solvent.

[0079] The preparation method of the photoresist composition provided by the invention has simple procedures, large processing volume, is suitable for mass production and has low cost.

[0080] The third aspect of the present invention provides use of the photoresist composition in manufacturing integrated circuits.

[0081] The application of the photoresist composition provided by the invention in manufacturing integrated circuits improves the production efficiency of the integrated circuits and reduces the production cost.

[0082] A fourth aspect of the present invention provides a method for forming a photoresist pattern, the method comprising the following steps:

[0083] Step A: coating the photoresist composition or the photoresist composition prepared by the preparation method on the target layer to form a photoresist layer;

[0084] Step B: exposing the photoresist layer to actinic radiation after pre-baking to obtain an exposed photoresist layer;

[0085] Step C: adding a developer to the exposed photoresist layer after intermediate baking, and developing to obtain the photoresist pattern.

[0086] The method for forming a photoresist pattern provided by the present invention ensures that the formed pattern meets actual process requirements and realizes a better photoresist pattern.

[0087] Optionally, the pre-baking temperature is 90-110°C.

[0088] In some embodiments of the present invention, the pre-bake temperature is typically but not limited to 90°C, 95°C, 100°C, 105°C or 110°C.

[0089] Preferably, the pre-baking time is 30-90s.

[0090] In some embodiments of the present invention, the pre-baking time is 30 s, 40 s, 50 s, 60 s, 70 s, 80 s or 90 s.

[0091] Preferably, the temperature of the intermediate baking is 120-140°C.

[0092] In some embodiments of the present invention, the temperature of the intermediate baking is typically but not limited to 120°C, 125°C, 130°C, 135°C or 140°C.

[0093] Preferably, the intermediate baking time is 30-90s.

[0094] In some embodiments of the present invention, the intermediate baking time is 30 s, 40 s, 50 s, 60 s, 70 s, 80 s or 90 s.

[0095] Optionally, in step B, the photoresist layer to be exposed is obtained after pre-baking and before exposure to actinic radiation.

[0096] Preferably, the thickness of the photoresist layer to be exposed is 500 nm.

[0097] Preferably, in step C, a developer is added for development.

[0098] Preferably, the developer comprises a tetramethylammonium hydroxide solution.

[0099] In some embodiments of the present invention, the developer is typically, but not limited to, a tetramethylammonium hydroxide solution, a potassium hydroxide solution, or a sodium hydroxide solution.

[0100] The concentration of the tetramethylammonium hydroxide solution is 2.38 wt %.

[0101] The embodiments of the present invention will be described in detail below with reference to examples, but those skilled in the art will appreciate that the following examples are only used to illustrate the present invention and should not be construed as limiting the scope of the present invention.

[0102] The specifications and types of raw materials used in the examples and comparative examples of the present invention are shown in Table 1 below. If no specific conditions are specified, conventional conditions or conditions recommended by the manufacturer shall be followed.

[0103] Table 1 Raw material specifications and models

[0104]

[0105] Example 1

[0106] This embodiment provides a photoresist composition, which is prepared by uniformly mixing 20 g of a poly(p-hydroxystyrene) resin having a weight average molecular weight of 10,000, 2 g of glycoluril, 0.18 g of acetic acid, 0.44 g of acetophenone O-benzoyl oxime and 100 g of propylene glycol methyl ether acetate, and filtering the mixture with a filter membrane having a pore size of 0.05 μm to obtain the photoresist composition.

[0107] Example 2

[0108] This embodiment provides a photoresist composition, which is prepared by uniformly mixing 20 g of a polyparahydroxystyrene resin having a weight average molecular weight of 10,000, 2 g of 1,3-bis(hydroxymethyl)urea, 0.2 g of ethanesulfonic acid, 0.48 g of acetophenone O-benzoyl oxime and 100 g of propylene glycol methyl ether acetate, and filtering the mixture through a filter membrane having a pore size of 0.05 μm to obtain the photoresist composition.

[0109] Example 3

[0110] This embodiment provides a photoresist composition, which is prepared by uniformly mixing 20 g of a poly(p-hydroxystyrene) resin having a weight average molecular weight of 10,000, 1.2 g of glycoluril, 0.2 g of sulfuric acid, 0.5 g of acetophenone O-benzoyl oxime and 100 g of propylene glycol methyl ether, and filtering the mixture through a filter membrane having a pore size of 0.05 μm to obtain the photoresist composition.

[0111] Example 4

[0112] This embodiment provides a photoresist composition, which is prepared by uniformly mixing 20 g of a poly(p-hydroxystyrene) resin having a weight average molecular weight of 5000, 1.2 g of glycoluril, 0.2 g of sulfuric acid, 0.5 g of acetophenone O-benzoyl oxime and 100 g of propylene glycol methyl ether, and filtering the mixture through a filter membrane having a pore size of 0.05 μm to obtain the photoresist composition.

[0113] Example 5

[0114] This embodiment provides a photoresist composition. The difference from Embodiment 1 is that the weight average molecular weight of the poly(p-hydroxystyrene) resin is 20,000. Other raw materials and preparation methods are the same as those in Embodiment 1 and will not be described in detail herein.

[0115] Comparative Example 1

[0116] This comparative example provides a photoresist composition, which is a deprotected KrF photoresist product, specifically model SUN-KrF100, and the manufacturer is Startech.

[0117] Test Example 1

[0118] The photoresist compositions provided in Examples 1-5 and Comparative Example 1 were spin-coated on the treated silicon wafers, respectively, and pre-baked (PAB) on a hot plate at a temperature of 100°C for 60 seconds. The rotation speed was adjusted so that the film thickness after drying was 500nm. After exposure by a KrF exposure machine (graphic size of 200nm), the hot plate was mid-baked (PEB) at a temperature of 130°C for 60 seconds. 2.38wt% tetramethylammonium hydroxide solution (TMAH) was used for immersion development for 40 seconds, and the photolithography process was completed after washing with deionized water to obtain a positive image. The width of the lines in the obtained positive image was measured respectively. When the line width was 200nm, the exposure dose was recorded and recorded in Table 2.

[0119] Test Example 2

[0120] The silicon wafer substrate obtained in Experimental Example 1 was etched by inductively coupled plasma. The etching gas was carbon tetrafluoride, the flow rate was 40 ml / min, the ICP power was 280 W, the RF power was 50 W, the etching pressure was 0.4 Pa, and the etching time was 400 s. The film thickness loss of the photoresist and the etching depth of the substrate were measured using a step profiler. The etching ratio was calculated by the photoresist thickness loss / substrate etching depth. The results are recorded in Table 2.

[0121] Table 2 Lithography performance data table

[0122]

[0123] It can be seen from Table 2 that the exposure dose of the photoresist composition provided by Examples 1-5 is lower than that of the photoresist composition provided by Comparative Example 1, and the dry etching resistance is significantly better than that of Comparative Example 1.

[0124] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A photoresist composition, characterized in that The invention comprises the following components by weight: 10-60 parts of poly(p-hydroxystyrene) homopolymer, 2-20 parts of a cross-linking agent, 0.2-5 parts of an acid catalyst, 0.2-5 parts of a photodeactivator, and 5-90 parts of a solvent; Wherein, the mass ratio of the poly(p-hydroxystyrene) homopolymer to the photodeactivator is 100-600:2-50; The structural formula of the poly(p-hydroxystyrene) homopolymer is: ； Wherein, n is an integer greater than 1; The weight average molecular weight of the poly(p-hydroxystyrene) homopolymer is 1000-20000; The photodeactivator comprises at least one of acetophenone O-benzoyl oxime, nifedipine, 2-nitrophenylmethyl 4-methacryloyloxypiperidine-1-carboxylate, 1,2-diisopropyl-3-[bis(dimethylamino)methylene]guanidine 2-(3-benzoylphenyl) propionate and 1,2-dicyclohexyl-4,4,5,5-tetramethylbiguanidine n-butyltriphenylborate; The acidic catalyst includes an organic acid and / or an inorganic acid; The organic acid comprises at least one of formic acid, acetic acid, propionic acid, methanesulfonic acid, ethanesulfonic acid, propanesulfonic acid and p-toluenesulfonic acid; The inorganic acid includes at least one of hydrochloric acid, sulfuric acid, nitric acid, phosphoric acid and hydrofluoric acid.

2. The photoresist composition according to claim 1, characterized in that The cross-linking agent includes at least one of glycoluril, glycoluril derivatives, 1,3-bishydroxymethylurea and 1,3-dimethyl-2-imidazolidinone.

3. The photoresist composition according to claim 1, characterized in that The solvent includes an organic solvent.

4. The photoresist composition according to claim 3, characterized in that The organic solvent includes at least one of glycol methyl ether, propylene glycol methyl ether acetate, ethyl acetate and ethyl lactate.

5. The method for preparing the photoresist composition according to any one of claims 1 to 4, characterized in that: The poly(p-hydroxystyrene) homopolymer, the photodeactivator, the crosslinking agent, the acid catalyst and the solvent are uniformly mixed to obtain the poly(p-hydroxystyrene) homopolymer.

6. Use of the photoresist composition according to any one of claims 1 to 4 or the photoresist composition prepared by the preparation method according to claim 5 in manufacturing integrated circuits.

7. A method for forming a photoresist pattern, characterized in that: The method comprises the following steps: Step A: coating the photoresist composition according to any one of claims 1 to 4 or the photoresist composition prepared by the preparation method according to claim 5 on the target layer to form a photoresist layer; Step B: exposing the photoresist layer to actinic radiation after pre-baking to obtain an exposed photoresist layer; Step C: baking the exposed photoresist layer and then developing it to obtain the photoresist pattern.

8. The method for forming a photoresist pattern according to claim 7, characterized in that: The pre-baking temperature is 90-110°C.

9. The method for forming a photoresist pattern according to claim 7, characterized in that: The pre-baking time is 30-90s.

10. The method for forming a photoresist pattern according to claim 7, wherein: The temperature of the intermediate baking is 120-140°C.

11. The method for forming a photoresist pattern according to claim 7, wherein: The intermediate baking time is 30-90s.

12. The method for forming a photoresist pattern according to claim 7, wherein: In step B, after prebaking, a photoresist layer to be exposed is obtained before exposure to actinic radiation.

13. The method for forming a photoresist pattern according to claim 12, characterized in that: The thickness of the photoresist layer to be exposed is 500 nm.

14. The method for forming a photoresist pattern according to claim 7, wherein: In step C, a developer is added for development.

15. The method for forming a photoresist pattern according to claim 14, characterized in that: The developer includes tetramethylammonium hydroxide solution, potassium hydroxide solution or sodium hydroxide solution.

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