Silicon electrode pore etching device and pore etching method

Abstract

The present invention discloses a silicon electrode pore etching device, including a jig assembly with an acid liquid circulation structure, a clamping device is arranged inside the jig assembly, a multi-layer diverter plate is clamped inside the clamping device, a silicon electrode pressing groove is arranged on the clamping device above the multi-layer diverter plate; a plurality of liquid holes connected to the acid liquid circulation structure are arranged on the diverter plate, and the liquid holes on two adjacent diverter plates are staggered. Also disclosed is a method for etching silicon electrode pores using a silicon electrode pore etching device. The silicon electrode pore etching device solves the problem of incomplete and uneven pore etching during silicon electrode etching; the acid enters from the bottom and circulates inside, and the arrangement of the acid tank and the diverter plate can not only reduce the pressure of the acid, but also effectively block impurities, and adjust the flow rate of the acid by staggering the diverter plate up and down to make the whole more uniform; the device adopts a plastic material with good corrosion resistance to effectively avoid the substitution and doping of impurity ions.

Description

Technical Field

[0001] The invention belongs to the technical field of semiconductor etching, and in particular relates to a silicon electrode pore etching device and a method for etching silicon electrode pores by using the device. Background Art

[0002] The etching of semiconductors is to immerse the semiconductor in an etching solution to remove unnecessary substances attached to its surface and ensure its cleanliness and purity. In existing etching devices, for the pores of silicon electrodes, the silicon electrodes are usually hung on general tooling, and then the silicon electrodes are sunk as a whole into the etching solution in the etching tank for etching. Then, due to the small aperture of the pores on the silicon electrode structure, the internal gas of each pore cannot escape in time when it is subjected to the pressure of the etching solution, resulting in the inability to etch the inside of the pores, and ultimately causing uneven etching in the pores of the shower head, thereby reducing the yield rate of the product. At the same time, there is a risk of the hanging tooling falling, which is not conducive to the batch etching of the shower head. Therefore, with the development of semiconductor technology, the existing silicon electrode etching device has gradually been unable to adapt to the production needs of the etching process of high-standard silicon electrodes, and it is necessary to develop a higher standard silicon electrode etching device to solve these problems. Summary of the invention

[0003] The purpose of the present invention is to overcome the problem in the existing silicon electrode etching process that the pores of the silicon electrode are unable to enter the etching liquid due to the different pressures of the etching liquid, which ultimately leads to uneven etching in the pores of the silicon electrode. A silicon electrode pore etching device that can make the overall etching of the silicon electrode more uniform and a method for etching the pores of the silicon electrode using the device are provided.

[0004] The technical solution adopted by the present invention to achieve its inventive purpose is: a silicon electrode pore etching device, including a jig assembly with an acid circulation structure, a clamping device is arranged inside the jig assembly, a multi-layer diverter plate is clamped inside the clamping device, and a silicon electrode pressing groove is arranged on the clamping device above the multi-layer diverter plate; a plurality of liquid holes connected to the acid circulation structure are arranged on the diverter plate, and the liquid holes on two adjacent layers of diverter plates are staggered. The silicon electrode pore etching device is provided with a clamping device inside the fixture assembly, and at the same time, a multi-layer diverter plate with liquid holes is provided inside the clamping device. The liquid holes on the upper and lower adjacent diverter plates are staggered according to the requirements of etching the pores and the acid flow rate and the diverted impurities, so as to achieve the control of the acid flow rate and the filtration of impurities, and the silicon electrode is provided inside the silicon electrode pressure groove on the upper part of the diverter plate. When in use, the acid enters from the lower acid circulation structure of the fixture assembly and is decompressed by the multi-layer diverter plate, so that the acid level can rise steadily through the liquid holes on the diverter plate, so as to achieve uniform etching of the upper silicon electrode pores. Since the diverter plate reduces the pressure of the acid flow, the internal gas of each pore can escape in time when being etched by the etching liquid, so as to ensure that the inside of the pore can also be etched, so as to achieve uniform etching in the pore and improve the product yield. At the same time, since a non-hanging etching device is adopted, there is no risk of silicon electrodes falling, which is conducive to realizing batch etching of silicon electrodes. In addition, the use of a diverter plate can effectively block impurities in the acid solution, effectively avoiding the introduction and doping of impurity ions, and ensuring the etching quality and quality of the silicon electrode.

[0005] Preferably, the jig assembly includes a jig body and a top cover provided on the jig body. The jig assembly is provided with the jig body and the top cover, so that the entire etching process can be completed inside the jig assembly, and a clean environment for etching the silicon electrode pores can be ensured to avoid external contamination.

[0006] Preferably, the acid circulation structure includes an acid tank disposed inside the fixture body, an acid inlet and an acid outlet connected to the acid tank; the acid inlet is disposed at the bottom of the acid tank. The acid tank adopts a spiral structure and is spirally disposed from the outer ring of the fixture body to the center, and the acid inlet is disposed at the bottom of the spiral inlet of the spiral structure acid tank. The acid pumped from the outside enters the spiral acid tank through the acid inlet, and flows from the outside to the center of the acid tank through the spiral acid tank, thereby realizing the spiral entry of the acid, and then rising layer by layer through the liquid holes from the bottom of the diverter plate until the top silicon electrode, etching the silicon electrode for pores. Since the acid enters in a spiral manner, the pressure of the acid is further reduced through the diverter plate, thereby ensuring the comprehensiveness and uniformity of the pore etching of the silicon electrode.

[0007] Preferably, the acid circulation structure is connected to the acid storage device disposed outside the fixture body, and the acid storage device is connected to the acid circulation structure through an acid pump, an input pipeline, and an output pipeline. The acid circulation structure is connected to the external acid storage device. When the silicon electrode pore etching device is working, the acid pump is started, and the acid pump pumps the acid in the acid storage device into the input pipeline, and the acid enters the acid circulation structure through the input pipeline to achieve pore etching of the silicon electrode. After completion, the acid flows back to the inside of the acid storage device through the acid outlet and the output pipeline, and can circulate in the pipeline again.

[0008] Preferably, the clamping device comprises a male sleeve ring and a female sleeve ring that are mutually clamped in the circumferential direction, and a plurality of circumferential manifold plate clamping grooves are arranged on the ring walls of the male sleeve ring and the female sleeve ring from bottom to bottom along the axial direction, and the silicon electrode pressing groove is arranged on the top of the inner wall of the male sleeve ring and the female sleeve ring. The clamping device is split and half-arranged to clamp the male sleeve ring and the female sleeve ring, and such a structure can facilitate the clamping installation of the manifold plate and adjust the offset position of the liquid holes on the upper and lower manifold plates.

[0009] Preferably, the clamping device is a structure that can be raised and lowered and rotated, and an exhaust structure is provided on the clamping device. The clamping device is set to be raised and lowered by a lifting device. The clamping device is a liftable type, and the number of diverter plates can be increased by adjusting the height of the clamping device to adjust the lifting height of the acid solution to control the flow rate of the acid solution. The purpose of setting it to be rotatable is to effectively remove the bubbles generated in the acid solution during the rising process of the acid solution. The clamping device is driven to rotate by a driving device, and the rotation speed is intermittent and low-frequency. The rotation of the clamping device is to discharge the gas in the acid solution through the exhaust structure, thereby ensuring that all the pores on the silicon electrode can be evenly etched. The exhaust structure can be an exhaust hole set on the side wall of the clamping device, or it can be an exhaust channel or exhaust groove, etc.

[0010] Preferably, the fixture assembly is made of PVC or PP materials, which can enhance the overall acid resistance of the device and prevent impurity contamination caused by metal ions.

[0011] Preferably, the clamping device is made of PTFE material. The clamping device is made of PTFE (Teflon) material as a whole, which has a very small friction coefficient and is non-sticky, and also has good heat resistance, wear resistance, and corrosion resistance. These properties can prevent the surface of the silicon electrode from being scratched when contacting the silicon electrode and prevent the wear caused by the diverter plate rotating in the clamping slot.

[0012] Preferably, an external etching device is further included, wherein the external etching device includes a box body arranged outside the fixture assembly and a box cover arranged on the box body. The external etching device provides a clean etching environment for the silicon electrode.

[0013] The technical solution adopted by the present invention to achieve the second invention object is: a method for etching silicon electrode pores using a silicon electrode pore etching device, comprising the following steps:

[0014] Step 1: Install the diverter plate into the diverter plate slot on the clamping device, and according to the set acid flow rate and diverted impurities requirements, rotate the diverter plate and adjust the position of the liquid holes on the diverter plate so that the liquid holes on the upper and lower diverter plates are staggered;

[0015] Step 2: Press the silicon electrode into the silicon electrode pressing groove on the clamping device by applying pressure, so that the silicon electrode is located on the upper part of the multi-layer shunt plate;

[0016] Step 3: Cover the top cover to cover the silicon electrode and the clamping device inside the fixture body, and close the external box cover to place the silicon electrode in a clean etching environment;

[0017] Step 4: Start the acid pump, pump the acid in the acid storage into the acid tank through the input pipeline and the acid inlet at the bottom of the acid tank, and steadily rise through the liquid holes on the diverter plate to etch the pores of the silicon electrode;

[0018] Step 5: After etching is completed, the acid flows back to the acid storage tank through the acid outlet and the output pipeline for recycling.

[0019] The method for etching silicon electrode pores using a silicon electrode pore etching device is as follows: the silicon electrode is placed on the silicon electrode pressure groove of the fixture component by pressurizing, and the acid is pumped into the acid inlet below the fixture component by an acid pump, and slowly rises after passing through the acid tank and the blocking and diversion of the multi-layer diverter plate. When in use, the acid enters from the lower acid circulation structure of the fixture component and is decompressed by the multi-layer diverter plate, so that the acid level can rise steadily through the liquid holes on the diverter plate, thereby achieving uniform etching of the upper silicon electrode pores. Since the acid tank and the diverter plate reduce the pressure of the acid flow layer by layer, the internal gas of each pore can escape in time when being etched by the etching solution, ensuring that the inside of the pore can also be etched, achieving uniform etching in the pore, and improving the product yield. When the etching is completed, the acid flows out from the acid outlet of the fixture component, flows back to the acid storage tank through the output pipeline, and circulates in the pipeline again.

[0020] The beneficial effects of the present invention are as follows: the silicon electrode pore etching device effectively solves the problem of incomplete and uneven pore etching during silicon electrode etching; the acid liquid circulates in the device, avoiding the waste of acid liquid; the acid liquid tank and the diverter plate can not only reduce the pressure of the acid liquid, but also effectively block impurities, and the diverter plate can be rotated up and down to adjust the flow rate of the acid liquid to make the whole more uniform; the entire device is made of plastic material with good corrosion resistance, which can effectively avoid the introduction and doping of impurity ions. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 It is a schematic diagram of an exploded structure of the silicon electrode pore etching device of the present invention;

[0022] Figure 2 yes Figure 1 A front view of a device for etching pores in a silicon electrode;

[0023] Figure 3 It is a schematic structural diagram of another angle of the silicon electrode pore etching device of the present invention;

[0024] Figure 4 It is a structural schematic diagram of the fixture body in the present invention;

[0025] Figure 5 It is a structural schematic diagram of the clamping device in the present invention;

[0026] Figure 6 It is a structural schematic diagram of the external etching device in the present invention;

[0027] Figure 7 It is a front view of the external etching device in the present invention;

[0028] In the figure: 1. silicon electrode, 2. fixture assembly, 3. clamping device, 31. male sleeve ring, 32. female sleeve ring, 33. manifold slot, 4. manifold, 5. silicon electrode pressure groove, 6. liquid hole, 7. fixture body, 8. top cover, 9. acid tank, 91. bundle flow channel, 10. acid inlet, 11. acid outlet, 12. acid storage device, 13. acid pump, 14. input pipeline, 15. output pipeline, 16. exhaust structure, 17. lifting device, 18. driving device, 19. external etching device, 20. box body, 21. box cover. DETAILED DESCRIPTION

[0029] The various aspects of the present invention are described in detail below through specific embodiments in conjunction with the accompanying drawings.

[0030] Embodiment 1:

[0031] In Figure 1, Figure 2 , Figure 3In the embodiment shown, a silicon electrode pore etching device includes a fixture assembly 2 with an acid circulation structure, a clamping device 3 is arranged inside the fixture assembly 2, a multi-layer diverter plate 4 is clamped inside the clamping device 3, and a silicon electrode pressing groove 5 is arranged on the clamping device 3 above the multi-layer diverter plate 4; the diverter plate 4 is provided with a plurality of liquid holes 6 connected to the acid circulation structure, and the liquid holes 6 on two adjacent layers of diverter plates 4 are staggered. The spacing between the upper and lower layers of the diverter plate is set at 3mm-8mm, and the spacing between the upper and lower layers of the diverter plate in this embodiment is set to 5mm.

[0032] The jig assembly 2 includes a jig body 7 and a top cover 8 covering the jig body 7. The jig assembly 2 is provided with a jig body and a top cover, so that the entire etching process can be completed inside the jig assembly, which can ensure a clean environment for etching the silicon electrode pores and avoid external contamination. In this embodiment, the jig body 7 is an annular structure, and the corresponding top cover 8 is a circular cover.

[0033] like Figure 4 As shown, the acid circulation structure includes an acid tank 9 arranged inside the fixture body 7, an acid inlet 10 and an acid outlet 11 connected to the acid tank 9; the acid inlet 10 is arranged at the bottom of the acid tank 9, and the acid outlet 11 is arranged on the side wall of the fixture body. In this embodiment, the acid tank 9 adopts a spiral structure and is spirally arranged from the outer circle of the fixture body 7 to the center, and a bundle flow channel 91 is arranged at the bottom of the acid tank 9. The bundle flow channel 91 gradually shrinks from the spiral inlet of the acid tank to the spiral center. The acid inlet 10 is arranged at the bottom of the spiral inlet of the spiral structure acid tank 9, and a plurality of acid inlets are arranged one by one corresponding to the corresponding bundle flow channels 91. The acid pumped from the outside enters the spiral acid tank 9 through the acid inlet 10, and flows from the outside to the center of the acid tank 9 through the spiral acid tank 9, thereby realizing the spiral entry of the acid. The pressure of the acid is reduced by the bundle flow channel and the spiral structure, and impurities in the acid can be precipitated at the same time. Then, the acid rises layer by layer from the bottom of the diverter plate 4 through the liquid hole 6 until the top silicon electrode, and the silicon electrode is etched with pores. Since the acid enters in a spiral manner, the pressure of the acid is further reduced through the diverter plate, thereby ensuring the comprehensiveness and uniformity of the pore etching of the silicon electrode.

[0034] The acid liquid circulation structure is connected to the acid liquid reservoir 12 disposed outside the fixture body 7, and the acid liquid reservoir 12 is connected to the acid liquid circulation structure through an acid liquid pump 13, an input pipeline 14, and an output pipeline 15. In this embodiment, the acid liquid circulation structure is connected to the external acid liquid reservoir. When the silicon electrode pore etching device is working, the acid liquid pump 13 is started, and the acid liquid pump 13 pumps the acid liquid in the acid liquid reservoir 12 into the input pipeline 14, and enters the acid liquid circulation structure through the input pipeline 14 to achieve silicon electrode pore etching. After completion, the acid liquid flows back to the inside of the acid liquid reservoir 12 through the acid outlet 11 and the output pipeline 15, and can circulate in the pipeline again.

[0035] like Figure 5 As shown, the clamping device 3 includes a male sleeve ring 31 and a female sleeve ring 32 that are circumferentially clamped to each other, and a plurality of circumferential diverter plate clamping grooves 33 are axially arranged on the ring walls of the male sleeve ring 31 and the female sleeve ring 32 from bottom to bottom, and the silicon electrode pressing groove 5 is arranged at the top of the inner wall of the male sleeve ring 31 and the female sleeve ring 32. In this embodiment, the clamping device adopts a split structure, and the male sleeve ring 31 and the female sleeve ring 32 that are clamped to each other are arranged in half. Such a structure can facilitate the clamping installation of the diverter plate 4 and adjust the offset position of the liquid holes on the upper and lower diverter plates. Fix the diverter plate 4 in the diverter plate clamping groove 33, then rotate the diverter plate, adjust the staggered position of the liquid holes on the diverter plate, so as to adjust the flow rate of the acid solution and realize the diversion of impurities at the same time.

[0036] The clamping device 3 is a liftable and rotatable structure, and an exhaust structure 16 is provided on the clamping device 3. In this embodiment, the clamping device 3 is set to be lifted and lowered by a lifting device 17. The clamping device 3 is set to be a liftable structure. The height of the acid solution inflow and the number of the diverter plates 4 can be adjusted by adjusting the height of the clamping device 3 to increase the height of the acid solution inflow and the number of the diverter plates 4 to adjust the lifting height of the acid solution to control the flow rate of the acid solution. The clamping device 3 is set to be rotatable in order to effectively remove the bubbles generated in the acid solution during the rising process of the acid solution. In this embodiment, the clamping device 3 is driven to rotate by a driving device 18, and the rotation speed is intermittent and low-frequency rotation. That is to say, the rotation of the clamping device is set according to the need of exhaust. If there is more gas, the number of rotations will be more, and if there is less gas, the number of rotations will be less; the gas in the acid solution is discharged through the exhaust structure by the rotation of the clamping device, so as to ensure that all the pores on the silicon electrode can be uniformly etched. In this embodiment, the exhaust structure adopts a plurality of exhaust holes arranged on the side wall of the clamping device. Of course, the exhaust structure can also be an exhaust channel or an exhaust groove. In this embodiment, the lifting device and the driving device are arranged outside the fixture body and below the fixture body, and the lifting device is connected to the fixture body in a dynamic sealing manner.

[0037] The fixture assembly 2 is made of PVC and PP materials. The fixture assembly 2 is made of PVC and PP materials, which can enhance the overall acid resistance of the device and prevent impurity pollution caused by metal ions.

[0038] The clamping device 3 is made of PTFE material. In this embodiment, the clamping device 3 is made of PTFE (Teflon) material as a whole, which has a very small friction coefficient and is non-sticky. It also has good heat resistance, wear resistance, and corrosion resistance. When contacting the silicon electrode, it prevents scratches on the surface of the silicon electrode and prevents wear caused by the diverter plate rotating in the clamping slot.

[0039] like Figure 6 , Figure 7 As shown, the silicon electrode pore etching device further includes an external etching device 19, wherein the external etching device 20 includes a box body 20 disposed outside the fixture assembly and a box cover 21 disposed on the box body 21. The external etching device 19 provides a clean etching environment for the silicon electrode.

[0040] A method for etching silicon electrode pores using a silicon electrode pore etching device comprises the following steps:

[0041] Step 1: Install the diverter plate 4 into the diverter plate slot 33 on the card connection device, and rotate the diverter plate 4 according to the set acid flow rate and divert impurity requirements, and adjust the position of the liquid holes 6 on the diverter plate 4 so that the liquid holes 6 on the upper and lower diverter plates 4 are staggered;

[0042] Step 2: Press the silicon electrode 1 into the silicon electrode pressing groove 5 on the clamping device 3 by applying pressure, so that the silicon electrode 23 is located on the upper part of the multi-layer shunt plate 4;

[0043] Step 3: Cover the top cover 8 to cover the silicon electrode 1 and the clamping device 3 inside the fixture body 7, and close the external box cover 22 to place the silicon electrode 1 in a clean etching environment;

[0044] Step 4: Start the acid pump 13, pump the acid in the acid storage 12 into the acid tank 9 through the input pipeline 14 and the acid inlet 10 at the bottom of the acid tank 9, and steadily rise through the liquid holes 6 on the diverter plate 4 to perform pore etching on the silicon electrode 1;

[0045] Step 5: After etching is completed, the acid solution flows back to the acid solution storage tank 12 through the acid outlet 11 and the output pipeline 15 for recycling.

[0046] The method for etching silicon electrode pores using a silicon electrode pore etching device is as follows: the silicon electrode is placed on the silicon electrode pressure groove of the fixture component by pressurizing, and the acid is pumped into the acid inlet below the fixture component by an acid pump, and slowly rises after passing through the acid tank and the blocking and diversion of the multi-layer diverter plate. When in use, the acid enters from the lower acid circulation structure of the fixture component and is decompressed by the multi-layer diverter plate, so that the acid level can rise steadily through the liquid holes on the diverter plate, thereby achieving uniform etching of the upper silicon electrode pores. Since the acid tank and the diverter plate reduce the pressure of the acid flow layer by layer, the internal gas of each pore can escape in time when being etched by the etching solution, ensuring that the inside of the pore can also be etched, achieving uniform etching in the pore, and improving the product yield. When the etching is completed, the acid flows out from the acid outlet of the fixture component, flows back to the acid storage tank through the output pipeline, and circulates in the pipeline again.

[0047] The silicon electrode pore etching device is provided with a clamping device inside the fixture assembly, and at the same time, a multi-layer diverter plate with liquid holes is provided inside the clamping device. The liquid holes on the upper and lower diverter plates are staggered according to the requirements of etching the pores and the acid flow rate and the diverted impurities, so as to achieve the control of the acid flow rate and the filtration of impurities, and the silicon electrode is provided inside the silicon electrode pressure groove on the upper part of the diverter plate. When in use, the acid enters from the lower acid circulation structure of the fixture assembly and is decompressed by the multi-layer diverter plate, so that the acid level can rise steadily through the liquid holes on the diverter plate, so as to achieve uniform etching of the upper silicon electrode pores. Since the diverter plate reduces the pressure of the acid flow, the internal gas of each pore can escape in time when being etched by the etching liquid, so as to ensure that the inside of the pore can also be etched, so as to achieve uniform etching in the pore and improve the yield rate of the product. At the same time, since a non-hanging etching device is adopted, there is no risk of silicon electrodes falling, which is conducive to realizing batch etching of silicon electrodes. In addition, the use of a diverter plate can effectively block impurities in the acid solution, effectively avoiding the introduction and doping of impurity ions, and ensuring the etching quality and quality of the silicon electrode.

[0048] The silicon electrode pore etching device includes two parts: an external etching device and an internal etching device. The external etching device provides a clean etching environment for the silicon electrode, and the internal etching device is used to etch the silicon electrode pores. The problem of incomplete and uneven pore etching during silicon electrode etching is well solved; the acid circulates in the device to avoid the waste of acid; the acid tank and the diverter plate can not only reduce the pressure of the acid, but also effectively block impurities, and the diverter plate can be rotated up and down to adjust the flow rate of the acid to make the whole more uniform; the entire device is made of plastic material with good corrosion resistance, which can effectively avoid the substitution and doping of impurity ions.

[0049] It should be noted that the above describes the embodiments of the present invention. However, those skilled in the art should understand that the present invention is not limited by the above embodiments, and the above embodiments are only for illustrating the principles of the present invention. The present invention may have various changes and improvements without departing from the scope of the present invention, and these changes and improvements all fall within the scope of the invention claimed for protection. Based on the embodiments described in the present invention, all other embodiments obtained by those of ordinary skill in the art on the basis of the technical solution of the present application without making creative work should fall within the scope of protection of the present invention.

Claims

1. A silicon electrode pore etching device, characterized in that: The invention comprises a jig assembly (2) with an acid circulation structure, wherein a clamping device (3) is arranged inside the jig assembly (2), a multi-layer diverter plate (4) is clamped inside the clamping device (3), and a silicon electrode pressing groove (5) is arranged on the clamping device (3) above the multi-layer diverter plate (4); the diverter plate (4) is provided with a plurality of liquid holes (6) connected to the acid circulation structure, and the liquid holes (6) on two adjacent layers of diverter plates (4) are arranged in a staggered manner; The clamping device (3) comprises a male sleeve ring (31) and a female sleeve ring (32) which are clamped to each other in the circumferential direction, and a plurality of circumferential flow divider plate clamping grooves (33) are arranged on the ring walls of the male sleeve ring (31) and the female sleeve ring (32) from bottom to bottom along the axial direction, and the silicon electrode pressing groove (5) is arranged at the top of the inner wall of the male sleeve ring (31) and the female sleeve ring (32).

2. The silicon electrode pore etching device according to claim 1, characterized in that: The jig assembly (2) comprises a jig body (7) and a top cover (8) disposed on the jig body (7).

3. The silicon electrode pore etching device according to claim 2, characterized in that: The acid liquid circulation structure comprises an acid liquid tank (9) arranged inside the fixture body (7), an acid inlet (10) and an acid outlet (11) connected to the acid liquid tank (9); the acid inlet (10) is arranged at the bottom of the acid liquid tank (9).

4. The silicon electrode pore etching device according to claim 1, characterized in that: The acid liquid circulation structure is connected to an acid liquid reservoir (12) arranged outside the fixture body (7), and the acid liquid reservoir (12) is connected to the acid liquid circulation structure via an acid liquid pump (13), an input pipeline (14) and an output pipeline (15).

5. The silicon electrode pore etching device according to claim 1, characterized in that: The clamping device (3) is a liftable and rotatable structure, and an exhaust structure (16) is provided on the clamping device (3).

6. A silicon electrode pore etching device according to any one of claims 1 to 5, characterized in that: The fixture component (2) is made of PVC and PP materials.

7. A silicon electrode pore etching device according to any one of claims 1 to 5, characterized in that: The clamping device (3) is made of PTFE material.

8. A silicon electrode pore etching device according to any one of claims 1 to 5, characterized in that: It also includes an external etching device (19), wherein the external etching device (19) includes a box body (20) arranged outside the fixture assembly and a box cover (21) covering the box body.

9. A method for etching silicon electrode pores using the silicon electrode pore etching device according to any one of claims 1 to 8, characterized in that The following steps are involved: Step 1: Install the diverter plate into the diverter plate slot on the clamping device, and according to the set acid flow rate and diverted impurities requirements, rotate the diverter plate and adjust the position of the liquid holes on the diverter plate so that the liquid holes on the upper and lower diverter plates are staggered; Step 2: Press the silicon electrode into the silicon electrode pressing groove on the clamping device by applying pressure, so that the silicon electrode is located on the upper part of the multi-layer shunt plate; Step 3: Cover the top cover to cover the silicon electrode and the clamping device inside the fixture body, and close the external box cover to place the silicon electrode in a clean etching environment; Step 4: Start the acid pump, pump the acid in the acid storage into the acid tank through the input pipeline and the acid inlet at the bottom of the acid tank, and steadily rise through the liquid holes on the diverter plate to etch the pores of the silicon electrode; Step 5: After etching is completed, the acid flows back to the acid storage tank through the acid outlet and output pipeline for recycling.

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