Low melting point alloy etching enhanced polishing tool and preparation method

Abstract

The application discloses a low-melting-point alloy etching enhanced polishing tool and a preparation method thereof. The polishing tool is composed of a low-melting-point gallium alloy, fine abrasive grains and a pore agent. The gallium alloy is a binder phase of the polishing tool and also an etching phase material of a processed material. The gallium alloy used is a series of gallium alloys containing gallium and indium, and the melting point of the gallium alloy is 30 DEG C to 250 DEG C. During polishing processing, the low-melting-point alloy in the tool etches the processed material, and the etching effect and the abrasive grain cutting effect are combined to realize high-efficiency and high-quality processing. The shape of the tool is determined according to the requirements of a processed part. The application is used for polishing and grinding processing of glass, aluminum and other metals, alloys and metal compounds which are easily etched by gallium, and waste liquid is not generated during the processing, so that high-efficiency and high-quality grinding and polishing processing can be realized.

Description

TECHNICAL FIELD

[0001] The present application relates to a polishing tool, especially a wetting type polishing tool for polishing processing of glass, aluminum, aluminum alloy and other metals, alloys and metal compounds which are easily etched by gallium, and particularly to a low-melting-point alloy etching enhanced polishing tool and a preparation method, which effectively enhances the polishing processing efficiency and quality by using a low-melting-point gallium alloy as a polishing tool etching phase. BACKGROUND

[0002] Mechanical polishing is a micro-cutting process of workpiece surface by using fine abrasive grains. In order to improve the processing effect, a processing liquid containing chemical components is usually used in the polishing process. The chemical reaction of the processing liquid and the workpiece helps the polishing process, which can accelerate the polishing rate, reduce the surface roughness and surface damage. Different combinations of workpiece, abrasive grains, polishing disc and processing liquid can achieve different polishing effects. However, the use of processing liquid will produce waste liquid, waste residue and other products that affect the environment. High-efficiency polishing processing methods without or with less environmental impact are the focus of the industry.

[0003] Gallium is a light blue metal stable in dry air. Pure gallium becomes a silver-white liquid at 29.76℃. Gallium has a very low melting point, and can easily form a low-melting-point eutectic compound with other alloys. The melting point of the eutectic compound can be adjusted by changing the content of alloy elements. Gallium can infiltrate glass and many metals and their alloys. Gallium can significantly reduce the potential of metals, and form active points on the surface of metals and their alloys, thereby activating the metals and their alloys and reducing the hardness of the metals and their alloys. The infiltration characteristics of gallium can change the surface properties of workpiece materials and improve the processing efficiency when used in the processing field.

[0004] In view of the problem of polishing liquid discharge, a low-melting-point gallium alloy is introduced as the binder phase and the etching phase of the tool, that is, the low-melting-point alloy etches the processed material, and the combined action of etching and abrasive cutting realizes high-efficiency and high-quality processing. SUMMARY

[0005] The purpose of the present application is to solve the problem that the use of processing liquid in the existing polishing processing method easily causes waste liquid and waste residue to affect the environment, and to invent a low-melting-point alloy etching enhanced polishing tool and a preparation method which can realize high-precision polishing without processing liquid.

[0006] One of the technical solutions of the present application is:

[0007] The low-melting-point alloy etching enhanced polishing tool is characterized in that the polishing tool is composed of a low-melting-point gallium alloy, fine abrasive grains and a pore agent, wherein the mass content of the low-melting-point gallium alloy is 20% to 70%, the mass content of the fine abrasive grains is 10% to 30%, and the mass content of the pore agent is 20% to 50%, and the sum of the components is 100%; when used for polishing processing, the low-melting-point alloy in the tool produces an etching effect on the processed material, and the combined effect of the etching effect and the abrasive grain cutting realizes high-efficiency and high-quality processing; the shape and size of the tool are manufactured according to the processing requirements of the processed parts; and the polishing tool can be used for polishing processing of glass, aluminum, aluminum alloy and other metals, alloys and metal compounds that are easily etched by gallium.

[0008] The gallium alloy is a binder phase of the polishing tool and also an etching phase material of the processed material; the used gallium alloy is a series of gallium alloys containing gallium and indium with a melting point of 30 DEG C to 250 DEG C, the melting point of the gallium alloy is adjusted by changing the content of the constituent elements in the alloy, and the mass content of gallium in the alloy is greater than 20%.

[0009] The fine abrasive grains are diamond, cubic boron nitride or silicon carbide that cannot be etched and destroyed by the gallium alloy in the polishing tool, and the particle size is between 10 nm and 10 microns.

[0010] The pore agent is a sulfate or nitrate in an easily soluble substance that cannot be etched and destroyed by the gallium alloy in the polishing tool, and the particle size is between 2 microns and 50 microns; the pore formed after the dissolution of the easily soluble substance is a chip space.

[0011] The second technical solution of the present application is:

[0012] A preparation method of a low-melting-point alloy etching enhanced polishing tool is characterized by comprising the following steps:

[0013] Step one, uniformly mix the fine abrasive grains and the pore agent, and keep the abrasive grains, the pore agent and the mixture dry before and after mixing and during the mixing process;

[0014] Step two, melt the gallium alloy in a dry pot that is not etched and destroyed by the gallium alloy or does not have a chemical reaction;

[0015] Step three, add the mixture of the fine abrasive grains and the pore agent prepared in step one into the molten gallium alloy liquid and stir uniformly;

[0016] Step four, inject the mixed liquid prepared in step three into a mold, cool and solidify, and obtain the tool after demolding.

[0017] The low-melting-point alloy etching enhanced polishing tool of the present application can be combined with a lapping tool to be used for lapping processing of glass, aluminum, aluminum alloy and other metals, alloys and metal compounds that are easily etched by gallium.

[0018] The beneficial effects of the present application are:

[0019] The polishing tool of the present application can be widely applied to grinding and polishing of glass, aluminum, aluminum alloy and other materials and parts which are easily etched by gallium, such as metal, alloy, metal compound, etc. The shape of the tool is determined according to the requirements of the parts to be processed, the corresponding forming mold cavity is manufactured according to the tool shape requirements, and the batch production of the tool can be realized by forming in the mold. DETAILED DESCRIPTION

[0020] The present application will be further described below in conjunction with examples.

[0021] Example 1.

[0022] A low-melting-point alloy etching-enhanced polishing tool is prepared by the following method:

[0023] Step one, uniformly mix 10 kg of diamond (or cubic boron nitride, silicon carbide) fine abrasive particles with a particle size of 3-5 μm and 50 kg of sulfate (nitrate) pore agent with a particle size of 10-50 μm, and keep the abrasive particles, pore agent and mixture dry before and during mixing;

[0024] Step two, melt 30 kg of gallium alloy (such as indium-gallium alloy, with a mass percentage of gallium of 30%) in a dry pot that is not etched by gallium alloy or does not have a chemical reaction;

[0025] Step three, add the mixture of fine abrasive particles and pore agent prepared in step one to the molten gallium alloy liquid and stir uniformly;

[0026] Step four, pour the mixed liquid prepared in step three into a mold and cool and solidify, and after demolding, the tool is obtained.

[0027] The polishing head prepared in this embodiment is used to process and polish single crystal sapphire material, and the surface roughness is below 10 nm.

[0028] Example 2.

[0029] A low-melting-point alloy etching-enhanced polishing tool is prepared by the following method:

[0030] Step one, uniformly mix 30 kg of diamond (or cubic boron nitride, silicon carbide) fine abrasive particles with a particle size of 2-3 μm and 20 kg of sulfate (nitrate) pore agent with a particle size of 20-50 μm, and keep the abrasive particles, pore agent and mixture dry before and during mixing;

[0031] Step two, melt 50 kg of gallium alloy (such as indium-gallium alloy, with a mass percentage of gallium of 40%) in a dry pot that is not etched by gallium alloy or does not have a chemical reaction;

[0032] Step three, the mixture of fine abrasive particles and porosity agent prepared in step one is added into the molten gallium alloy liquid and stirred evenly;

[0033] Step four, the mixed liquid prepared in step three is injected into a mold and cooled and solidified, and the tool is obtained after demolding.

[0034] The polishing head prepared in the embodiment is used to polish an aluminum alloy material, and the surface roughness is below 8 nm.

[0035] Example three.

[0036] A low-melting-point alloy etching enhanced polishing tool is prepared by the following method:

[0037] Step one, 20 kg of diamond (or cubic boron nitride, silicon carbide) fine abrasive particles with a particle size of 100 nm to 200 nm and 35 kg of sodium sulfate porosity agent with a particle size of 10 μm to 20 μm are uniformly mixed, and the abrasive particles, porosity agent and mixture are kept dry before and after mixing and during mixing;

[0038] Step two, 45 kg of gallium alloy (such as indium-gallium alloy, wherein the mass percentage of gallium is 50%) is heated and melted in a dry pot that is not etched and damaged by the gallium alloy or does not have a chemical reaction;

[0039] Step three, the mixture of fine abrasive particles and porosity agent prepared in step one is added into the molten gallium alloy liquid and stirred evenly;

[0040] Step four, the mixed liquid prepared in step three is injected into a mold and cooled and solidified, and the tool is obtained after demolding.

[0041] The polishing head prepared in the embodiment is used to polish a single-crystal sapphire material, and the surface roughness is below 2 nm.

[0042] Example four.

[0043] A low-melting-point alloy etching enhanced polishing tool is prepared by the following method:

[0044] Step one, 10 kg of silicon carbide fine abrasive particles with a particle size of 100 nm to 500 nm and 20 kg of sodium nitrate porosity agent with a particle size of 10 μm to 20 μm are uniformly mixed, and the abrasive particles, porosity agent and mixture are kept dry before and after mixing and during mixing;

[0045] Step two, 70 kg of gallium alloy (such as indium-gallium alloy, wherein the mass percentage of gallium is 40%) is heated and melted in a dry pot that is not etched and damaged by the gallium alloy or does not have a chemical reaction;

[0046] Step three, the mixture of fine abrasive particles and porosity agent prepared in step one is added into the molten gallium alloy liquid and stirred evenly;

[0047] Step four, the mixed liquid prepared in step three is injected into a mold and cooled and solidified, and the tool is obtained after demolding.

[0048] The polishing head prepared in this embodiment is used to polish aluminum alloy material, and the surface roughness is below 5 nm.

[0049] Example five.

[0050] A low-melting-point alloy etching enhanced polishing tool is prepared by the following method:

[0051] Step one, 30 kg of diamond (or cubic boron nitride, silicon carbide) fine abrasive particles with a particle size of 3-5 μm and 20 kg of sulfate (nitrate) porosity agent with a particle size of 20-50 μm are uniformly mixed, and the abrasive particles, porosity agent and mixture are kept dry before and during mixing;

[0052] Step two, 50 kg of gallium alloy (such as indium-gallium alloy, with a mass percentage of gallium of 35%) is heated and melted in a dry pot that is not eroded or chemically reacted by the gallium alloy;

[0053] Step three, the mixture of fine abrasive particles and porosity agent prepared in step one is added into the molten gallium alloy liquid and stirred evenly;

[0054] Step four, the mixed liquid prepared in step three is injected into a mold and cooled and solidified, and the tool is obtained after demolding.

[0055] The polishing head prepared in this embodiment is used to polish aluminum material, and the surface roughness is below 10 nm.

[0056] Example six.

[0057] The alloy in the low-melting-point alloy etching enhanced polishing tool is gallium-indium alloy, and the mass content ratio of gallium-indium alloy is gallium: indium = 4:1, and the mass content of gallium-indium alloy in the polishing tool is 60%. The fine abrasive particles are diamond abrasive particles with a particle size of 1-2 μm, and the mass content of diamond abrasive particles in the tool is 10%. The porosity agent is sodium sulfate particles with a particle size of 10-20 μm, and the mass content of sodium sulfate particles in the tool is 30%.

[0058] The polishing tool is prepared by the following steps: step one, uniformly mixing dry diamond fine abrasive particles and sodium sulfate pore agent with a mass content ratio of 1:3 in a powder mixer, and sealing the obtained mixture for storage; step two, weighing gallium alloy, and heating the gallium alloy in a nickel dry pot to above 80 DEG C to make the gallium alloy melt; step three, weighing the mixture prepared in step one, and adding the diamond fine abrasive particles and sodium sulfate pore agent compound to the molten gallium alloy liquid in a mass ratio of 2:3 to the mass of the gallium alloy in step two, and stirring uniformly; step four, injecting the mixed liquid prepared in step three into a mold with a cavity size of Φ100mm*3mm to cool and solidify, and obtaining a polishing disc tool with a diameter of 100mm and a thickness of 3mm after solidification forming and demolding.

[0059] The single crystal sapphire material is polished by using the low-melting-point gallium alloy polishing disc tool, and the surface roughness is below 5nm.

[0060] The part of the present application not involved and the prior art can be realized by using the prior art.

Claims

1. A low melting point alloy impregnated enhanced polishing tool characterized by: The polishing tool is composed of gallium-indium alloy with a melting point of 30-250 DEG C, fine abrasive particles and pore agent, wherein the mass content of gallium-indium alloy is 20-70%, the mass content of fine abrasive particles is 10-30%, and the mass content of pore agent is 20-50%, and the sum of the components is 100%; when used for polishing processing, the low-melting alloy in the tool produces etching effect on the processed material, and the combined action of etching effect and abrasive cutting realizes high-efficiency and high-quality processing; the tool shape and size are manufactured according to the processing requirements of the processed material; the polishing tool is used for polishing processing of glass, aluminum and aluminum alloy; the gallium-indium alloy is the binder phase of the polishing tool and also the etching phase material of the processed material, the melting point of the gallium-indium alloy is adjusted by changing the content of the constituent elements in the alloy, and the mass content of gallium in the alloy is >20%; the fine abrasive particles are diamond, cubic boron nitride or silicon carbide which cannot be etched and damaged by the gallium-indium alloy in the polishing tool, and the particle size is between 10 nm and 10 um; the pore agent is sulfate or nitrate in easily soluble material which cannot be etched and damaged by the gallium-indium alloy in the polishing tool, and the particle size is between 2 um and 50 um; the hole formed after the dissolution of the easily soluble material is the chip space; the preparation method of the low-melting alloy etching enhanced polishing tool comprises the following steps: Step one, uniformly mix the fine abrasive particles and the pore agent, and keep the abrasive particles, pore agent and mixture dry before and after mixing and during the mixing process; Step two, melt the gallium-indium alloy in a crucible which is not etched and damaged by the gallium-indium alloy or does not have chemical reaction; Step three, add the mixture of fine abrasive particles and pore agent prepared in step one into the molten gallium-indium alloy liquid and stir uniformly; Step four, pour the mixed liquid prepared in step three into a mold, cool and solidify, and obtain the tool after demolding.